WO2007088808A1

WO2007088808A1 - Magnet structure for magnetron sputtering apparatus, cathode electrode unit, magnetron sputtering apparatus and method for using magnet structure

Info

Publication number: WO2007088808A1
Application number: PCT/JP2007/051383
Authority: WO
Inventors: Takahiko Kondo; Takanobu Hori
Original assignee: Shinmaywa Industries, Ltd.
Priority date: 2006-02-01
Filing date: 2007-01-29
Publication date: 2007-08-09
Also published as: JP2007204811A; TW200732492A

Abstract

A magnet structure (110) for a magnetron sputtering apparatus is provided with first and second stationary magnets (10, 13) arranged on the rear plane side of a target (20) with the same magnetic polarity facing the rear plane of the target. The magnet structure is also provided with magnetic field correcting means (11, 12), which are arranged on the rear plane side of the target (20) between the first and the second stationary magnets (10, 13) and can vary the direction of magnetic moment within a flat plane along the thickness direction and the width direction of the target (20).

Description

Specification

Magnet structure and force sword electrode unit for magnetron sputtering apparatus, magnetron sputtering apparatus, and method of using magnet structure

Technical field

The present invention relates to a magnet structure for a magnetron sputtering apparatus, a force sword electrode unit, a magnetron sputtering apparatus, and a method of using the magnet structure (hereinafter referred to as “magnet structure etc.”). More specifically, the present invention relates to an improved technology for magnetron sputtering magnet structures and the like for the purpose of increasing target utilization efficiency.

Background art

Sputtering in which ions (for example, Ar ions) collide with a target material in a vacuum to cause the target atoms to jump out and attach these atoms to a substrate placed opposite to the target material. A film formation method based on the phenomenon has been well known.

In the magnetron sputtering film forming method, which is one of these film forming methods, a tunnel-like leakage magnetic field having a predetermined magnetic flux density or higher is formed on the target surface (front surface facing the substrate). As a result, the frequency of ionization collisions with Ar gas can be increased by capturing the secondary electrons generated in the process of the sputtering phenomenon by the mouth-to-lentz force and making it move in a cycloidal motion. A high-density plasma can be formed to increase the deposition rate.

[0004] However, such a magnetron sputtering film-forming method causes a target material in a region with a strong magnetic field to be locally and quickly scraped by sputtering, resulting in unevenness in the amount of sputtering in the target surface. In the past, various techniques have been developed to compensate for these disadvantages.

[0005] For example, a magnet structure that swings the entire magnetic device (magnet structure) including the plurality of magnets for forming a leakage magnetic field, a yoke, and various connecting members in the surface direction of the target surface. This drive mechanism has been proposed (see Patent Document 1).

[0006] According to such a drive mechanism, the force of moving the magnet in the surface direction along the back surface of the target changes the magnetic field line distribution on the surface of the target in conjunction with the movement of the magnet. As a result, the erosion promoting region on the target surface changes periodically, and uniform erosion of the target surface during sputtering can be achieved.

Patent Document 1: Japanese Patent Laid-Open No. 329874 (Fig. 3)

Disclosure of the invention

Problems to be solved by the invention

[0007] However, the drive mechanism for the magnet structure described in Patent Document 1 requires driving the entire magnetic structure, which has the disadvantage that the drive mechanism becomes complicated and large.

[0008] The present invention has been made in view of such circumstances, and the distribution of magnetic lines of force on the surface of the target is changed at predetermined intervals by a simple drive mechanism that does not oscillate the entire magnet structure. An object of the present invention is to provide a magnet structure and the like that can achieve wide erosion.

Means for solving the problem

In order to solve the above problems, the magnet structure for a magnetron sputtering apparatus according to the present invention includes first and second magnets arranged on the back surface side of the target such that the same kind of magnetic poles face the back surface of the target. A magnetic field that is disposed on the back side of the target between the fixed magnet and the first and second fixed magnets and can change the direction of the magnetic moment in a plane along the thickness direction and the width direction of the target And a correction means.

Here, the magnetic field correction means may include a plurality of magnets having both end surfaces functioning as magnetic poles, and the magnets may be configured to be able to rotate the both end surfaces in the plane.

[0011] With the above-described configuration of the magnet structure, the magnetic force distribution on the surface of the target is changed at predetermined intervals by a simple drive mechanism that does not swing the entire magnet structure, so that the target has a wide erosion. A magnet structure or the like is obtained.

More specifically, the magnetic field correction means includes a first rotating body that includes the magnet adjacent to the first fixed magnet and is rotatable around an axis perpendicular to the plane, and the second A second rotation rotatable about an axis perpendicular to the plane including the magnet adjacent to the fixed magnet And a body.

[0013] Then, the first and second rotating bodies are substantially circular around the axis by the magnet and members joined to both side surfaces of the magnet sandwiched between the both end surfaces. It may be shaped like a column.

[0014] It is preferable that the first and second rotating bodies have a substantially columnar shape because the rotational torque when rotating these rotating bodies is well balanced.

[0015] Here, in the method of using the magnet structure according to the present invention, the magnetic pole of the first rotating body, which is different from the magnetic pole of the same type, is rotated by the rotation of the first rotating body around the axis. The magnetic field lines formed between the second fixed magnet and the first rotating body are offset by the rotation of the second rotating body around the axis and facing the back surface of the target. The second rotation different from the magnetic pole of the same kind by the usage pattern in which the magnetic moment of the second rotating body is oriented in the width direction of the target and the rotation of the second rotating body around the axis. A body magnetic pole is formed between the first fixed magnet and the second rotating body by rotating around the central axis of the first rotating body while facing the back surface of the target. The magnetic moment of the first rotating body is increased in the width direction of the target so as to cancel the magnetic field lines. Ku and use form, may be a method of including.

[0016] By rotating the first and second rotating bodies of the magnet structure around the axis at predetermined intervals according to the sputtering state of the target and repeating the above two types of usage, the vertical zero crossing is performed. Since the (magnetic field line distribution in the neighboring area) moves in the width direction of the target, target erosion between the two is alternately superimposed, and as a result, the portion of the part that swells perpendicularly to the surface of the target The region in which the plasma confinement function due to the magnetic field lines cannot be exhibited disappears, and the target is suitable for being scraped over almost the entire region.

[0017] A force sword electrode unit for a magnetron sputtering apparatus according to the present invention includes a target made of a non-magnetic metal, the magnet structure disposed on the back side of the target, and a predetermined power supply to the target. And a power source.

A magnetron sputtering apparatus according to the present invention includes the above-described force sword electrode unit, and a vacuum chamber capable of depressurizing the inside storing the force sword electrode unit and a substrate facing the target of the force sword electrode unit. ing. [0018] The above objects, other objects, features, and advantages of the present invention will become apparent from the following detailed description of the preferred embodiments with reference to the accompanying drawings.

The invention's effect

[0019] According to the present invention, the magnetic field distribution on the target surface is changed at predetermined intervals by a simple drive mechanism that does not cause the entire magnet structure to oscillate, thereby achieving wide erosion of the target. A magnet structure or the like is obtained.

Brief Description of Drawings

FIG. 1 is a plan view of a force sword electrode unit including a magnet structure according to an embodiment of the present invention.

FIG. 2 is a perspective view of a force sword electrode unit in a portion along the Π_Π section line of FIG.

FIG. 3 is a diagram showing an example of an analysis result of the magnet structure according to the present embodiment by a static magnetic field simulation technique.

FIG. 4 is a diagram showing an example of the analysis result of the magnet structure according to the present embodiment by the static magnetic field simulation technique.

FIG. 5 is a schematic diagram showing a sputtering operation of a target using the magnet structure according to the present embodiment.

Explanation of symbols

[0021] 10 Left magnet

11 Left hand rotating body

12 Right side rotating body

13 Right magnet

14 Actuator

20 targets

21 base

22 First base piece

23 Second base piece

26 Upper magnetic field line 25A 1st upper field line

25B Second upper field line

26 Lower magnetic field lines

27 Inner intermediate magnetic field lines

28 Outer intermediate magnetic field lines

29 Zero point

100 force sword electrode unit

110 Magnet structure

VI Power source

VB1 1st vertical zero cross

VB2 Second vertical zero cross

BEST MODE FOR CARRYING OUT THE INVENTION

Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings.

FIG. 1 is a plan view of a force sword electrode unit including a magnet structure (magnetic field forming means) according to an embodiment of the present invention.

FIG. 2 is a perspective view of the force sword electrode unit at a portion along the cross-sectional line of FIG.

In FIG. 1, only the magnet of the magnet structure 110 is shown from the viewpoint of simplifying the drawing.

For convenience, in FIGS. 1 and 2 (the same applies to FIG. 3), the width direction of the target 20 is “X direction”, the thickness direction of the target 20 is “Y direction”, and the X direction and the heel direction are Each component of the force sword electrode unit 100 will be described with the “vertical direction” being the “heel direction”, one of the both sides of the target 20 in the width direction being “right” and the other being “left”.

[0026] Further, the depth (reverse direction of the heel direction) of each constituent member of the magnet structure 110 in FIG. 2 is shown in a cut form in the middle, but these constituent members are actually the same cross-sectional shape. It can be easily understood by referring to Fig. 1.

[0027] The force sword electrode unit 100 according to the present embodiment is mainly made of aluminum as shown in FIG. A rectangular target 20 made of a nonmagnetic metal such as (Al) and a magnet structure 110 having a plurality of magnets arranged on the back surface 20B side of the target 20 are provided.

[0028] The target 20 is a thin film base material to be coated on a substrate (not shown) disposed opposite to the target 20 and is used for the purpose of drawing Ar ions (positive ions) in the plasma by the cathode (power sword) by the power source VI. )

[0029] Further, here, a vacuum chamber (not shown) for a magnetron sputtering apparatus, in which a force sword electrode unit 100 and a substrate are housed and whose inside can be decompressed, is grounded as an anode.

[0030] In the course of the sputtering phenomenon, a high density plasma containing Ar ions is formed near the surface of the target 20 by a tunnel-like leakage magnetic field for confining the plasma. ), But the force by which the bombarded atoms are struck from the target surface by this Ar ion collision energy and the struck atoms are deposited on the substrate. Such a technique is well known and will not be described in detail here.

As shown in FIG. 2, the magnet structure 110 has a base 21 made of, for example, ferromagnetic stainless steel. This base 21 has a rectangular plate-shaped outer shape that is slightly larger than the outer dimension of the target 20 in a plan view (FIG. 1), and a tunnel-like leak for trapping the plasma in the upper space near the surface 20A of the target 20. A force S for fixing and holding each component (magnet and magnetic member described later) of the magnetic structure 110 that generates a magnetic field and the target 20 integrally through appropriate fixing means, here, such fixing means The illustration and explanation are omitted.

[0032] As the first fixed magnet of the magnet structure 110, on the back surface 20B side of the target 20, as shown in FIGS. 1 and 2, the inner side of the target 20 from the left end in the width direction (X direction) of the target 20 The left side magnet 10 (permanent magnet) having a substantially rectangular shape at a position slightly below (hereinafter referred to as “the vicinity of the left end”) is located on the long side of the target 20 in the plan view. It is arranged in the form of a bar that matches the direction and is arranged on the upper surface of the rectangular first base piece 22 mounted on the base 21 shown in FIG.

[0033] Specifically, the left magnet 10 has a Y-direction orientation as shown in FIG.

The direction of the magnetic moment in the left magnet 10 is generated from 20B to the front surface 20A). The N pole and the S pole are provided. The N pole side of the left magnet 10 is in contact with the upper surface of the first base piece 22 made of a magnetic material (for example, ferromagnetic stainless steel or iron). It faces the vicinity of the left end of the base 21 through 22.

[0034] As the second fixed magnet of the magnet structure 110, on the back surface 20B side of the target 20, from the right end in the width direction (X direction) of the target 20 as shown in FIG. 1 and FIG. The right-side magnet 13 (permanent magnet) having a substantially rectangular shape at a position slightly below (hereinafter referred to as the “right end vicinity”) is positioned on the long side of the target 20 in the longitudinal direction of the magnet 13 in plan view. It is arranged in the shape of a rod that matches the direction (Z direction) and is disposed on the upper surface of the rectangular second base piece 23 mounted on the base 21 shown in FIG.

[0035] Specifically, the right magnet 13 generates the direction of the magnetic moment in the right magnet 13 in the Y direction as shown in Fig. 2 (direction of force from the back surface 20B to the front surface 20A of the target 20). N-pole and S-pole, and the right-side magnet 13 has the south-pole side facing the right end of the back surface 20B of the target 20, and the right-side magnet 13 has the north-pole side made of a magnetic material (e.g., ferromagnetic stainless steel or The second base piece 23 made of iron is in contact with the upper surface of the second base piece 23, and is directed to the vicinity of the right end of the base 21 through the second base piece 23.

[0036] Further, a substantially cylindrical left rotating body 11 (magnetic field correcting means) located on the back surface 20B side of the target 20 and adjacent to the left magnet 10 between the left and right magnets 10 and 13 is shown in FIG. As shown in Fig. 2, perpendicular to this XY plane so that the direction of the magnetic moment can be changed in the plane (in the XY plane) along the thickness direction (Y direction) and the width direction (X direction) of the target 20 It is configured to be rotatable around a central axis P in the Z direction.

[0037] An example of the left rotating body 11 is a plate-shaped magnet 1 la (permanent) having one end surface (N extreme surface 11N) functioning as an N pole and the other end surface (S extreme surface 11S) functioning as an S pole. Magnet) and the S extreme surface 11S and N extreme surface 11 N of the plate magnet 11a, and the ferromagnetic member l lc, l joined to both side surfaces 11F of the plate magnet 11a By id, it is formed in a substantially cylindrical shape with the central axis P as the center.

[0038] The left rotating body 11 is rotationally driven by an actuator 14 such as a motor as shown in Fig. 1 around the central axis P of the plate magnet 11a. And can rotate over a predetermined rotation angle range around the central axis P. In other words, left rotating body 1 1 (plate magnet 11a) is configured such that both end faces 11S, 11N including the S extreme face 11S and the N extreme face 11N rotate around the central axis P in the XY plane.

[0039] Note that in the left rotating body 11 of FIG. 2, the magnetic pole (S pole) of the left magnet 10 and the different magnetic pole (N pole) are directed to the back surface 20B of the target 20 by rotation around the central axis P. Examples of usage are shown.

[0040] Further, a substantially cylindrical right rotating body 12 (magnetic field correcting means) located on the back surface 20B side of the target 20 and adjacent to the right magnet 13 between the left and right magnets 10, 13 is shown in FIG. As shown in Fig. 2, the direction of the magnetic moment can be changed in a plane (in the XY plane) along the thickness direction (Y direction) and the width direction (X direction) of the target 20 as shown in Fig. 2. It is configured to be rotatable around the central axis P in the Z direction.

[0041] An example of the right rotating body 12 is a plate-like magnet 12a (permanent magnet) having one end surface (N extreme surface 12N) functioning as an N pole and the other end surface (S extreme surface 12S) functioning as an S pole. ) And the ferromagnetic members 12c and 12d joined to both side surfaces 12F of the plate magnet 12a sandwiched between the S extreme surface 12S and the N extreme surface 12N of the plate magnet 12a by the central axis P It is shaped like a substantially circular column centered on

[0042] Then, the right rotating body 12 is rotationally driven by an actuator 14 such as a motor as shown in FIG. 1 around the central axis P of the plate magnet 12a, whereby the right rotating body 12 is And can rotate over a predetermined rotation angle range around the central axis P. In other words, the right-hand rotating body 1 2 (plate magnet 12a) is configured such that both end faces 12S and 12N consisting of the S extreme face 12S and the N extreme face 12N rotate around the central axis P in the XY plane. Has been.

[0043] In the right-hand rotating body 12 in FIG. 2, the magnetic moment with the S pole on the left side and the N pole on the right side in the width direction (X direction) of the target 20 is caused by the rotation around the central axis P. A suitable usage pattern is illustrated.

Here, it is preferable that the left and right side rotators 11 and 12 have a substantially cylindrical shape, so that the balance of the rotational torque of these rotators 11 and 12 can be appropriately maintained.

[0045] The magnets 10, l la, 12a, and 13 described above can be configured using various known magnet materials, and these magnets 10, l la, 12a, and 13 are formed on the back surface of the target 20. When the 20B is immersed in the cooling water used for cooling, the magnet surface should be protected against rust and It is desirable to select a magnet material (for example, a ferrite magnet).

[0046] Further, the left and right side rotating bodies 11, 12 are arranged so that the surfaces of the left and right side rotating bodies 11, 12 are as close as possible to the back surface 20B of the target 20 (however, a gap that allows smooth rotation is essential). Alternatively, the left and right rotating bodies 11 and 12 may be arranged so that a certain distance is provided between these front surfaces and the rear surface 20B of the target 20.

[0047] By bringing them as close as possible, the distance between the left and right rotating bodies 11 and 12 and the target 20 is minimized, contributing to the formation of a plasma confinement magnetic field caused by the left and right rotating bodies 11 and 12 In some cases, it is beneficial to effectively exert magnetic energy.

[0048] When the front surfaces of the left and right rotating bodies 11 and 12 and the back surface 20B of the target 20 are brought close to each other, the left and right rotating bodies 11 and 12 are lifted by an appropriate raising member (not shown). It's okay.

[0049] In addition, there may be a case where it is beneficial to cool the back surface 20B of the target 20 with cooling water by securing a certain distance between them. For example, in the case of adopting a cooling structure in which the entire magnet structure 110 is immersed in a cooling water container (not shown) in which cooling water is stored, cooling water can be allowed to flow through this gap to And heat exchange between the target 20 and the rear surface 20B of the target 20 is performed efficiently. In addition, in order to employ a cooling structure in which a backing plate (not shown) having a hollow portion for allowing cooling water to flow is brought into contact with the rear surface 20B of the target 20, this is used as a knocking plate insertion space. Important intervals become essential

[0050] Further, by the operation of the actuator 14 based on the control of an appropriate control means (microprocessor or the like; not shown), the left and right rotating bodies 11 and 12 are made to correspond to the sputtering state of the target 20. In addition, the rotation can be performed while controlling the rotation angular velocity at appropriate intervals for a predetermined rotation angle range around the central axis P.

[0051] Next, the verification result of the magnetic flux density distribution magnetized on the target 20 described above by utilizing the static magnetic field simulation technique will be described.

[0052] An analysis model having substantially the same shape as the cross-sectional shape shown in FIG. Mesh area corresponding to the target 20 and mesh area corresponding to the target 20 and their boundary Appropriate material property data and boundary condition data are input to each of the cache regions.

[0053] As the analysis solver, general-purpose magnetic field analysis software ("MagN et" manufactured by INFOLYTICA) was used.

FIG. 3 and FIG. 4 are diagrams showing an example of the analysis result of the magnet structure according to the present embodiment by the static magnetic field simulation technique.

[0055] Fig. 3 shows the magnetic flux density distribution (contour surface) and magnetic flux density vector (arrow) in the analysis model. The analysis results of the two-dimensional cross section along the line I 卜 II in Fig. 1 are shown. FIG.

[0056] In Fig. 4 (a), the horizontal axis represents the position of the target surface in the X direction, and the vertical axis represents the X direction component of the magnetic flux density on the target surface. Figure 4 (b) is a plot using numerical data.The horizontal axis shows the X-direction position of the target surface, and the vertical axis shows the Y-direction component of the magnetic flux density on the target surface. It is the figure which plotted the relationship using the numerical value data obtained from the analysis result force.

Here, the contour diagram (contour map) of the magnetic flux density displayed in gray scale in FIG. 3 is the height distribution (magnetic flux density distribution) of the total (absolute value) of the magnetic flux density vector components. This indicates that the magnetic flux density increases as it moves from the light gray area to the dark gray area (however, the upper limit of the magnetic flux density is 500G).

With reference to such contour diagrams and vector diagrams of magnetic flux density, magnetic field lines can be understood as curves in which the tangential direction at each point coincides with the direction of the magnetic field at that point.

[0059] However, in FIG. 3, the force S reproduced as faithfully as possible in the contour and vector diagrams of the magnetic flux density output from the computer for analysis, and for the purpose of facilitating understanding of these contents, In addition to the magnetic flux density distribution output by, the upper magnetic field line 25 (first upper magnetic field line 25A, second upper magnetic field line 25B), lower magnetic field line 26, inner intermediate magnetic field line 27, and outer intermediate line are shown. Representing each of the magnetic lines of force 28, a dragging, thickening, and two-dot chain line are added.

According to FIG. 3, the first upper magnetic field line 25A and the lower magnetic field line 26 are arranged inside the target 20 so as to cancel the X-direction vector component of the magnetic flux density (the width direction component of the target 20). The inner intermediate magnetic field line 27 and the outer intermediate magnetic field line 28 are formed so as to cancel the Y direction vector component of the magnetic flux density (the thickness direction component of the target 20). Yes.

[0061] The first upper magnetic field line 25A exits from the north pole of the plate magnet 11a of the left rotating body 11 and reaches the surface 20A of the target 20, and the Y direction vector and the X direction vector components of the magnetic flux density are approximately. Near the surface 20A of the target 20 immediately above the zero point 29 that becomes zero, it extends substantially in the X direction and enters the S pole of the right magnet 13 while bending this part in an arch shape.

[0062] The second upper magnetic field line 25B exits from the north pole of the plate magnet 11a of the left rotating body 11 and reaches the surface 20A of the target 20 and is substantially parallel to the X direction in the vicinity of the surface 20A of the target 20. The left magnet 10 enters the south pole of the left magnet 10 while bending in an arch shape.

[0063] Further, the lower magnetic field lines 26 extend from the vicinity of the top of the ferromagnetic member 12d of the right rotator 12 and extend substantially parallel to the vicinity of the back surface 20B of the target 20 immediately below the zero point 29 in the opposite direction of the X direction. Enter the south pole of the plate magnet 12a of the right rotating body 12.

[0064] Further, the inner intermediate magnetic field line 27 extends from the N pole of the plate magnet 11a of the left-side rotating body 11 to the middle of the thickness direction of the target 20, and extends inside the target 20 so as to bend in an arch shape. Pass the zero point 29 (the position on the minus side in the X direction from the zero point 29) in a substantially parallel direction opposite to the Y direction and enter the south pole of the plate magnet 12a of the right rotating body 12.

[0065] Further, the outer intermediate magnetic field line 28 passes from the vicinity of the top of the ferromagnetic member 12d of the right rotator 12 to the side of the zero point 29 (position from the zero point 29 to the X direction plus side) substantially parallel to the Y direction. The target 20 reaches the middle in the thickness direction, extends in an arch shape inside the target 20, and enters the S pole of the right magnet 13.

[0066] Such magnetic force H25A, 25B, 26, 27, 28 [Surface and target tattering phenomenon of the target 20, surface that leaks to the surface 20A of the target 20 of the leakage magnetic field in the vicinity of 20A, surface Based on the magnetic flux density component parallel to 20A (X direction) (hereinafter referred to as “parallel magnetic flux density”) and the magnetic flux density component perpendicular to the surface 20A (Y direction) (hereinafter referred to as “vertical magnetic flux density”). Thus, the discussion will be made with reference to FIG. 3 and FIG.

[0067] It is known from experience that the target magnetic flux density in the Y-direction of the leakage magnetic field becomes near zero (vertical cross-point) force.

[0068] Further, the parallel magnetic flux density in the leakage magnetic field functions as a leakage magnetic field for confining the plasma, and the degree of erosion of the target 20 is supported by the absolute value of the parallel magnetic flux density. It is considered to be arranged.

[0069] As can be understood from FIG. 4 (b), the X-direction position where the vertical magnetic flux density is substantially zero includes the first vertical zero cross VB1 near the left end in the X direction and a little to the right from the center in the X direction. There is a second vertical zero cross VB2.

[0070] Therefore, first, the sputtering phenomenon of the target 20 in the first vertical zero cross VB1 will be examined.

[0071] The first vertical zero cross VB1 is formed by a vector notre parallel to the X direction opposite to the target 20 of the second upper magnetic field line 25B as shown in FIG. 3 and FIG. 4 (b).

[0072] Since the plate magnet 11a of the left rotating body 11 and the left magnet 10 that make the second upper magnetic field line 25B are adjacent to each other, the range of the first vertical zero cross VB1 in the X direction is This is thought to be narrower, and this is supported by the steep vertical magnetic flux density change in the vicinity of the first vertical zero cross VB1 shown in Fig. 4 (b).

Further, as shown in FIG. 3, the X-direction component of the magnetic flux density of the second upper magnetic field line 25B cancels out, so that there is no so-called lower magnetic field line, so the parallel magnetic flux density in the vicinity of the first vertical zero cross VB1 is The maximum value of the parallel magnetic flux density (absolute value) in the X direction corresponding to the first vertical zero cross VB1 shown in Fig. 4 (a) (scale: approx. 1) Supported by 1).

[0074] According to the evaluation of the vertical magnetic flux density and the horizontal magnetic flux density described above, in the first vertical zero cross VB1, it is estimated that the target 20 can be sharply cut in a narrow range in the X direction by the sputtering. Is done.

[0075] Next, the sputtering phenomenon of the target 20 in the second vertical zero cross VB2 will be examined.

[0076] In the vicinity of the lower part of the second vertical zero cross VB2, the first upper magnetic field line 25A, the lower magnetic field line 26, the inner intermediate magnetic field line 27, and the outer intermediate magnetic field line 28 as shown in FIG. 3 and FIG. 4B are surrounded. A zero point 29 is formed in the region.

[0077] In short, this second vertical zero cross VB2 is a left-side rotation that creates this first upper magnetic field line 25A in a situation where it is formed by a vectorore parallel to the X direction of the target 20 of the first upper magnetic field line 25A. The plate magnet 1 la and the right magnet 13 of the body 11 are adjacent to each other. The range of the X direction of the second vertical zero cross VB2 is thought to increase, which is supported by the slow change in the vertical magnetic flux density near the second vertical zero cross VB2 shown in Fig. 4 (b). It has been.

[0078] In addition, the zero point 29 exists below the second vertical zero cross VB2 (in other words, the lower magnetic field line 26 that cancels the X-direction component of the magnetic flux density of the first upper magnetic field line 25A exists). Therefore, the parallel magnetic flux density in the vicinity of the second vertical zero cross VB2 is not so high. This indicates that the parallel magnetic flux density (absolute value) in the X direction corresponding to the second vertical zero cross VB2 shown in Fig. 4 (a) ) Maximum value (scale: approx. 5).

[0079] According to the evaluation of the vertical magnetic flux density and the horizontal magnetic flux density described above, in the second vertical zero cross VB2, it is estimated that the target 20 is gently scraped over a wide range in the X direction by the sputtering. Is done.

[0080] Next, the sputtering operation of the target 20 using such a magnet structure 110 will be described.

FIG. 5 is a schematic diagram showing a sputtering operation of a target using the magnet structure 110 according to the present embodiment.

[0082] The upper magnet structure in FIG. 5 is arranged in the same manner as the magnet structure 110 shown in FIG.

That is, in the upper part of FIG. 5, the magnetic poles (S) facing the back surface 20B of the target 20 of the left and right magnets 10 and 13 are rotated by rotation around the central axis P of the plate magnet 11a of the left rotating body 11. The magnetic pole (N pole) of the plate magnet 11a of the left rotating body 11 that is different from the pole) is directed to the back surface 20B of the target 20 and rotated around the central axis P of the plate magnet 12a of the right rotating body 12 , The magnetic field lines formed in the width direction (X direction) of the target 20 between the right magnet 13 (S pole) and the plate magnet 11a (N pole) of the left rotating body 11 (first upper magnetic field line 25A in FIG. 3) The magnetic structure 110 is used in such a manner that the magnetic moment of the right rotating body 12 is directed in the width direction of the target 20 so as to cancel out the above.

[0084] In this case, based on the vertical magnetic flux density and horizontal magnetic flux density formed by the magnet structure 110, the target 20 as shown in the upper part of FIG. Faster in a narrow range in the width direction (X direction) of the target 20 between 11 Scraps and gently cuts in the X direction between the left rotating body 11 and the right magnet 13 in a wide range.

[0085] The middle magnet structure in FIG. 5 rotates the left rotating body 11 counterclockwise by 90 ° and the right rotating body 12 counterclockwise with respect to the magnet structure 110 shown in FIG. ° Arranged to rotate.

That is, in the middle part of FIG. 5, the magnetic poles (S) facing the back surface 20B of the target 20 of the left and right magnets 10 and 13 by rotation around the central axis P of the plate magnet 12a of the right rotating body 12 are shown. The magnetic pole (N pole) of the plate magnet 12a of the right rotating body 12 that is different from the pole) is directed to the back surface 20B of the target 20 and rotated around the central axis P of the plate magnet 11a of the left rotating body 11 In order to cancel out the magnetic field lines formed in the width direction (X direction) of the target 20 between the left magnet 10 (S pole) and the plate magnet 12a (N pole) of the right rotating body 12, The usage pattern of the magnet structure 110 in which the magnetic moment is directed in the width direction of the target 20 is illustrated.

[0087] In this case, based on the vertical magnetic flux density and horizontal magnetic flux density formed by the magnet structure 110, the target 20 shown in the middle of FIG. The target 20 is sharply cut in a narrow range in the width direction (X direction) of the target 20, and is slowly cut in a wide range in the X direction between the right rotating body 12 and the left magnet 10.

Therefore, based on the operation of the actuator 14 (FIG. 1), the left and right rotating bodies 11 and 12 of the magnet structure 110 are moved at predetermined intervals according to the sputtering state of the target 20 in the upper part of FIG. The first and second vertical zero crossings VB1 and VB2 (the magnetic field line distribution in the vicinity) are rotated by rotating around the central axis P so that it becomes the middle usage pattern in Fig. 5 and the usage pattern. As a result, the target 20 erodes alternately between the two, resulting in a perpendicular to the surface 20B of the target 20 as shown in the lower part of FIG. Thus, the region where the plasma confinement function due to the magnetic field lines cannot be exhibited disappears, and the target 20 is suitable for cutting over substantially the entire region.

Therefore, according to the magnet structure 110 and the method of using the magnet structure 110 of the present embodiment, the distribution of the magnetic lines of force on the surface of the target 20 can be appropriately changed at predetermined intervals. Wide erosion with reduced local spatter can be realized, the efficiency of using the target can be increased, and the replacement period of the target 20 can be extended. This will contribute to an improvement in the operating rate of the Rena type magnetron sputtering apparatus.

Further, according to the magnet structure 110 of this embodiment and the method of using the magnet structure 110, only the left and right rotating bodies 11, 12 that are only one member of the magnet structure 110 that does not swing the entire magnet structure 110 are used. It is preferable that the magnetic force line distribution on the surface of the target 20 can be appropriately changed at predetermined intervals by a simple drive mechanism that rotates around the central axis P.

[0090] From the above description, many modifications and other embodiments of the present invention are apparent to persons skilled in the art. Accordingly, the foregoing description should be construed as illustrative only and is provided for the purpose of teaching those skilled in the art the best mode of carrying out the invention. Details of the structure and Z or function thereof can be substantially changed without departing from the spirit of the invention.

Industrial applicability

[0091] The magnet structure according to the present invention is useful, for example, as a magnetic field forming means for a magnetron sputtering apparatus.

Claims

The scope of the claims

[1] First and second fixed magnets arranged on the back side of the target so that the same type of magnetic poles face each other on the back side of the target;

A magnetic field correcting means disposed on the back side of the target between the first and second fixed magnets and capable of changing the direction of the magnetic moment in a plane along the thickness direction and the width direction of the target; ,

A magnet structure for a magnetron sputtering apparatus.

[2] The magnetic field correction means includes a plurality of magnets having both end surfaces that function as magnetic poles, and the magnets are configured to be able to rotate in the plane and to rotate the both end surfaces. Item 1. The magnet structure according to Item 1.

[3] The magnetic field correcting means includes the first rotating body including the magnet adjacent to the first fixed magnet and rotatable about an axis perpendicular to the plane, and is adjacent to the second fixed magnet. A magnet structure according to claim 2, further comprising a second rotating body including the magnet and rotatable about an axis perpendicular to the plane.

[4] The first and second rotating bodies each have a substantially cylindrical shape centered on the axis by the magnet and members joined to both side surfaces of the magnet sandwiched between the both end surfaces. The magnet structure according to claim 3, wherein the magnet structure is formed into a shape.

[5] Due to the rotation of the first rotating body around the axis, the magnetic pole of the first rotating body, which is different from the same type of magnetic pole, faces the back surface of the target, and the second rotating body The magnetic moment of the second rotating body is offset in the width direction of the target so as to cancel out the lines of magnetic force formed between the second fixed magnet and the first rotating body by the rotation around the axis. Use form suitable for,

Due to the rotation of the second rotating body around the axis, the magnetic pole of the second rotating body, which is different from the magnetic pole of the same kind, faces the back surface of the target, and the central axis of the first rotating body Use in which the magnetic moment of the first rotating body is directed in the width direction of the target so as to cancel out the lines of magnetic force formed between the first fixed magnet and the second rotating body by rotation around The method of using the magnet structure according to claim 3 or 4, comprising a shape.

[6] The target made of a nonmagnetic metal and disposed on the back side of the target 5. A force sword electrode unit for a magnetron sputtering apparatus, comprising: the magnet structure according to claim 4; and a power source that supplies a predetermined power to the target.

7. A magnetron sputtering apparatus comprising: a force sword electrode unit according to claim 6; and a vacuum chamber capable of depressurizing an inside storing the force sword electrode unit and a substrate facing the target of the force sword electrode unit.