Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
  • H01L33/483—Containers
  • H01L33/486—Containers adapted for surface mounting
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
  • H01L33/64—Heat extraction or cooling elements
  • H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
  • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
  • H01L2224/42—Wire connectors; Manufacturing methods related thereto
  • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
  • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
  • H01L2224/4805—Shape
  • H01L2224/4809—Loop shape
  • H01L2224/48091—Arched
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
  • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
  • H01L2224/42—Wire connectors; Manufacturing methods related thereto
  • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
  • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
  • H01L2224/481—Disposition
  • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
  • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
  • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
  • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
  • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
  • H01L2224/42—Wire connectors; Manufacturing methods related thereto
  • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
  • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
  • H01L2224/491—Disposition
  • H01L2224/49105—Connecting at different heights
  • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
  • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
  • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
  • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
  • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/01—Chemical elements
  • H01L2924/01068—Erbium [Er]
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
  • H01L2924/1901—Structure
  • H01L2924/1904—Component type
  • H01L2924/19041—Component type being a capacitor
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
  • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
  • H01L33/64—Heat extraction or cooling elements
  • H01L33/642—Heat extraction or cooling elements characterized by the shape

Definitions

• the present invention relates to a light emitting diode, and more particularly, to a combined top and side view type light emitting diode having a lead structure usable in not only top view type but also side view type.
• a light emitting diode is basically a semiconductor PN junction diode. If P-type and
• N-type semiconductors are bonded to each other and a voltage is then applied thereto, holes of the P-type semiconductor move toward the N-type semiconductor to be gathered into a center layer thereof, whereas electrons of the N-type semiconductor move toward the P-type semiconductor to be gathered into a center layer that is the lowest place in a conduction band.
• the electrons naturally drop into holes in a valence band.
• the energy corresponding to the difference of level between the conduction and valence bands i.e., an energy gap, is radiated. The energy is radiated in the form of light.
• the light emitting diode Since such a light emitting diode can emit high efficiency light at a low voltage, the light emitting diode has been used for electric appliances, remote controllers, electronic display boards, indicators and various automatic devices. Particularly, as information telecommunication devices become small and slim, resistors, capacitors, noise filters and the like, which are various components of devices, are more miniaturized.
• SMD Surface Mount Device
• Such SMD type light emitting diodes are manufactured in top view and side view types according to a use.
• the top view type light emitting diode shown in Figs. 1 and 2 comprises a substrate
• the molding member 50 may be formed in various shapes.
• the light emitted from the light emitting diode chip 10 is reflected upward by the reflection hole 25 and radiated to the outside through the molding member 50.
• the side view type light emitting diode shown in Figs. 3 and 4 comprises a substrate 110, first and second leads 120 and 130 formed on the substrate 110, a light emitting diode chip 140 mounted on the second lead, a reflector 150 formed on the substrate to reflect the light emitted from the light emitting diode chip 140 to the lateral direction, and a molding member 180 encapsulating the light emitting diode chip 140.
• the first and second leads are bonded on a predetermined printed circuit board such that the light emitted from a light emitting diode chip is radiated to a side surface.
• a side view type light emitting diode is mainly used as a light source of a backlight unit in a liquid crystal display for a mobile communication terminal.
• the respective light emitting diodes should be dis- criminately manufactured according to a use of an applied product. Therefore, if product groups are diversified, there is a problem in that additional production facilities are required for each product.
• the brightness of a light emitting diode is in proportion to a current applied to the light emitting diode chip, and the current applied to the light emitting diode chip is in proportion to heat radiated from the light emitting diode chip. Accordingly, a high current should be applied to a light emitting diode in order to increase the brightness thereof.
• the light emitting diode chip is damaged due to the heat radiated by the light emitting diode chip, there is a problem in that a high current cannot be unlimitedly applied.
• the heat radiated from the light emitting diode chip is radiated through a lead. Since such a lead or a heat slug is formed in a single direction, there is also a problem in that heat radiation is not effective. Disclosure of Invention Technical Problem
• the present invention is conceived to solve the aforementioned problems in the prior art.
• An object of the present invention is to provide a light emitting diode usable in not only the top view type but also the side view type.
• a light emitting diode comprising a substrate; first and second leads formed on the substrate to be spaced apart from each other at a predetermined interval; and a light emitting diode chip mounted on any one of the first and second leads, wherein the first and second leads are formed to extend on the same side and rear surfaces of the substrate.
• the light emitting diode may further comprise a molding member encapsulating the light emitting diode chip.
• the light emitting diode may further comprise a reflector formed on the substrate.
• the first and second leads may be formed to extend onto the same other side surface of the substrate.
• the lead having the light emitting diode chip mounted thereon may be formed to be larger than the other lead.
• leads with different polarities are formed on the same side and rear surfaces of a substrate, whereby a light emitting diode can be used in not only a top view type but also a side view type.
• a light emitting diode can be used in not only a top view type but also a side view type.
• it is unnecessary to discriminately manufacture light emitting diodes according to a use of an applied product, so that product developing costs can be reduced and product management can be simplified.
• the area of a lead is increased, whereby heat radiation efficiency can be enhanced.
• Figs. 1 and 2 are perspective and sectional views of a general top view type light emitting diode, respectively.
• Figs. 3 and 4 are perspective and sectional views of a general side view type light emitting diode, respectively.
• Figs. 5 to 8 are perspective, plan, side and rear views of a combined top and side view type light emitting diode according to a first embodiment of the present invention, respectively.
• Figs. 9 to 12 are perspective, plan, side and rear views of a combined top and side view type light emitting diode according to a second embodiment of the present invention, respectively.
• Figs. 13 to 16 are perspective, plan, side and rear views of a combined top and side view type light emitting diode according to a third embodiment of the present invention, respectively.
• FIGS. 5 to 8 are perspective, plan, side and rear views of a combined top and side view type light emitting diode according to a first embodiment of the present invention, respectively.
• the combined top and side view type light emitting diode 300 shown in Figs. 5 to 8 comprises a substrate 310, a first lead 320, a second lead 330, a light emitting diode chip 340, a reflector 350, a first wire 360, a second wire 370, and a molding member 380.
• the first and second leads 320 and 330 are formed on the substrate 310 to be spaced apart from each other at a predetermined interval.
• the first and second leads 320 and 330 extend in the same direction and are formed on the same side and rear surfaces of the substrate 310 to be exposed. Thus, the first and second leads 320 and 330 are simultaneously formed on the side surface of the substrate.
• first and second leads are formed on only the side and rear surfaces of the substrate in this embodiment, the first and second leads may also be formed to extend to the other side surface of the substrate.
• the light emitting diode is shown in a rectangular shape in this embodiment, the present invention is not limited thereto. That is, the light emitting diode may have the shape of a square and be formed in various shapes.
• the light emitting diode chip 340 is formed on the substrate 310.
• the first wire 360 electrically connects the light emitting diode chip 340 and the first lead 320
• the second wire 370 electrically connects the light emitting diode chip 340 and the second lead 330.
• thermal conductive resin may be used to form the substrate 310 in order to allow the heat emitted from the light emitting diode chip 340 to be radiated.
• the light emitting diode chip 340 is formed on the substrate 310, the light emitting diode chip 340 may be formed on the first or second lead 320 or 330.
• the reflector 350 is formed to have a predetermined height along an outer circumference on the substrate 310 for serving to gather the light emitted from the light emitting diode chip 340.
• the molding member 380 is formed in the interior of the reflector 350 on the substrate in order to encapsulate the light emitting diode chip 340. At this time, the molding member 380 is formed by applying a material such as liquid epoxy or silicone resin into the reflector 350 and then heating and curing the material for a predetermined time. Further, a phosphor absorbing the light emitted from the light emitting diode chip 340 and converting wavelength of the light to a predetermined wavelength may be mixed in the molding member 380.
• a material such as liquid epoxy or silicone resin
• the rear surface of the substrate is mounted on a predetermined printed circuit board when the light emitting diode is used as a top view type, while the side surface of the substrate is mounted on a predetermined printed circuit board when the light emitting diode is used as a side view type. Accordingly, if the aforementioned combined top and side view type light emitting diode 300 is used, it is unnecessary to discriminately manufacture light emitting diodes according to a use of a product.
• Figs. 9 to 12 are perspective, plan, side and rear views of a combined top and side view type light emitting diode according to a second embodiment of the present invention, respectively.
• the second embodiment is different from the first embodiment in that a combined top and side view type light emitting diode 400 according to the second embodiment of the present invention has a plurality of light emitting diode chips (three light emitting diode chips in this embodiment) and a plurality of first and second leads; and the other components of both the embodiments are almost the same. Therefore, only different portions will be described below.
• first leads 420a, 420b and 420c first leads 420a, 420b and 420c, second leads 430a, 430b and 430c, light emitting chips 440a, 440b and 440c, a reflector 450, wires 460a, 460b and 460c, and a molding member 480.
• the first and second leads are formed to be spaced apart from one another at a predetermined interval.
• the first and second leads are formed to be spaced apart from one another in order of the first lead 420a, the second lead 430a, the second lead 430b, the first lead 420b, the second lead 430c and the first lead 420c.
• the arrangement order of the first and second leads is not limited thereto. That is, the first and second leads may be alternately arranged. Moreover, the first and second leads may be arranged in a variety of orders.
• the first and second leads are formed to extend in the same direction, such that they are exposed on the same side and rear surfaces on the substrate. That is, the first and second leads 420a, 420b, 420c, 430a, 430b and 430c are simultaneously formed on the side surface of the substrate. Although the first and second leads are formed on only the side and rear surfaces of the substrate in this embodiment, the first and second leads may be formed to extend to the other side surface of the substrate.
• the light emitting diode chips 440a, 440b and 440c are mounted on the second leads 430a, 430b and 430c, respectively.
• the second leads may be formed to be larger than the first leads.
• the light emitting chips may be mounted on the first leads.
• the light emitting diode chips 440a, 440b and 440c may be light emitting diode chips emitting red R, green G and blue B wavelengths, respectively.
• light emitting diode chips with various wavelengths may be used.
• the wires 460a, 460b and 460c electrically connect the light emitting chips and the first leads, respectively.
• the molding member 480 is formed in the interior of the reflector 450 on the substrate to encapsulate the light emitting diode chips. Further, a phosphor absorbing the light emitted from the light emitting diode chips and converting wavelength of the light to a predetermined wavelength may be mixed in the molding member 480.
• the light emitting diode having the three light emitting diode chips, the three first leads and the three second leads is illustrated in this embodiment, this is only an exemplary embodiment for description. That is, the number of the light emitting diode chips or first and second leads is not limited thereto.
• Figs. 13 to 16 are perspective, plan, side and rear views of a combined top and side view type light emitting diode according to a third embodiment of the present invention, respectively.
• the third embodiment is different from the second embodiment in that a combined top and side view type light emitting diode 500 according to the third embodiment of the present invention does not have a reflector; and the other components of both the embodiments are almost the same. Therefore, only different portions will be described below.

Landscapes

• Engineering & Computer Science (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Manufacturing & Machinery (AREA)
• Computer Hardware Design (AREA)
• Power Engineering (AREA)
• Led Device Packages (AREA)

Priority Applications (1)

Applications Claiming Priority (2)

Publications (1)

Family

ID=38188789

Family Applications (1)

Country Status (4)

Cited By (5)

Families Citing this family (4)

Citations (3)

Family Cites Families (3)

• 2005
  • 2005-12-20 KR KR1020050126473A patent/KR100719282B1/ko active IP Right Grant
• 2006
  • 2006-12-15 WO PCT/KR2006/005499 patent/WO2007073062A1/en active Application Filing
  • 2006-12-15 DE DE112006003435T patent/DE112006003435B4/de active Active
  • 2006-12-20 TW TW95147887A patent/TWI388069B/zh active

Patent Citations (3)

Also Published As

Similar Documents

Legal Events