WO2007071569A1 - Objectif de projection d'un appareil d'exposition par projection microlithographique - Google Patents

Objectif de projection d'un appareil d'exposition par projection microlithographique Download PDF

Info

Publication number
WO2007071569A1
WO2007071569A1 PCT/EP2006/069423 EP2006069423W WO2007071569A1 WO 2007071569 A1 WO2007071569 A1 WO 2007071569A1 EP 2006069423 W EP2006069423 W EP 2006069423W WO 2007071569 A1 WO2007071569 A1 WO 2007071569A1
Authority
WO
WIPO (PCT)
Prior art keywords
projection objective
projection
image
waists
anyone
Prior art date
Application number
PCT/EP2006/069423
Other languages
English (en)
Inventor
Susanne Beder
Heiko Feldmann
Original Assignee
Carl Zeiss Smt Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carl Zeiss Smt Ag filed Critical Carl Zeiss Smt Ag
Publication of WO2007071569A1 publication Critical patent/WO2007071569A1/fr

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70241—Optical aspects of refractive lens systems, i.e. comprising only refractive elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems

Definitions

  • the invention relates to a projection objective of a microlithographic projection exposure apparatus.
  • Microlithography is used for the manufacture of micro- structured components such as for example integrated circuits or liquid crystal displays (LCDs) .
  • the microlithography process is performed in a so-called projection exposure apparatus which comprises an illumination system and a projection objective.
  • the image of a mask also called a reticle
  • a substrate for example a silicon wafer
  • a light-sensitive coating for example a photoresist
  • a projection objective according to the invention which is part of a microlithographic projection exposure apparatus, which serves to project an image of a mask that can be set in position in an object plane onto a light-sensitive coating layer that can be set in position in an image plane and which is designed to operate in an immersion mode, comprises in a purely refractive design exactly two waists and produces at least one intermediate image.
  • a waist means a significantly narrowed-down section of the projection objective with a pronounced local minimum of the cross sectional diameter of the electromagnetic radiation passing through the projection objective.
  • a "pronounced" local minimum means a location along the optical axis of the projection objective where the diameter of the electromagnetic radiation passing through the projection objective is less than 80 %, in particular less than 60 %, and even more particularly less than 40 % in comparison to the corresponding diameter in the bulge lying upstream and in the bulge lying downstream of the waist.
  • the term "bulge" means a section of the projection objection where the diameter of the electromagnetic radiation travelling through the projection objective has a local maximum.
  • the projection objective according to the invention has only two waists and produces at least one intermediate image
  • a design is provided that is comparatively (i.e. for a purely refractive design) compact and which comprises moderate lens diameters and a comparatively short track length, while at the same time enabling an efficient correction of optical aberrations.
  • the projection objective has at least one intermediate image
  • the requirements with regard to telecentry are lower at the position of this intermediate image, since even with a non-perfect telecentry at the position of the intermediate image, an overall optical system being telecentric at the object plane side and the image plane side (referred to for brevity as "two-sided” or “doubled” telecentric) , wherein per definition the respective principal rays extend parallel to the optical axis in the object plane and the image plane, can be provided, namely by combining the optical subsystem being arranged upstream of the intermediate image and the optical subsystem being arranged downstream of the intermediate image.
  • subsystem always denotes such an arrangement of optical elements, by which a real object is projected into a real image or intermediate image.
  • each subsystem starting from a given object plane or intermediate image plane always includes all optical elements to the next real image or intermediate image.
  • the two-sided telecentry obtained for the projection objective as a whole has the advantage that, as is known, the imaging is true to scale in the region of the depth of focus (DOF) .
  • DOE depth of focus
  • the projection objective has a maximum objective diameter and at least one of the waists, preferably each of said waists, has a waist diameter which is less than 50 %, preferably less than 40 %, and with even higher preference less than 30 % of that maximum objective diameter.
  • the lenses which are used for compensation of the intrinsic birefringence introduced by said high-refractive optical element have to be irradiated with correspondingly large ray angles, which are advantageously provided by the design of the projection objective having pronounced waists according to the invention .
  • the intermediate image is located in the region of (at least close to or at the position of) that waist of the two waists which is arranged closer to the image plane.
  • a pupil plane is preferably located in the region of (at least close to or at the position of) that waist of the two waists which is arranged closer to the object plane.
  • the projection objective comprises a last optical element on the image side having a refractive index n LL which at the working wavelength of the projection objective has a value larger than 1.7, preferably larger than 2.
  • this last optical element on the image side is made from a material which is selected from the group that consists of lutetium aluminum garnet (LU3AI5O12) , yttrium aluminum garnet (Y3AI5O12) and spinel, in particular magnesium spinel (MgAl 2 C>4) .
  • Such a high refractive optical element produces a comparatively large positive contribution to the Petzval sum, which can be effectively corrected in the waists provided according to the invention e.g. by means of negative lenses arranged at these positions. Since the ray heights in the waists are low, such negative lenses have a relatively low contribution to the overall refractive power if compared to the positive lenses, such that there is an excess of positive refractive power.
  • At least one meniscus lens is arranged directly adjacent to at least one of the waists, and preferably directly adjacent to each of the waists. Such of an embodiment is also advantageous since due to the meniscus lens(es) arranged in at least one of the waists, a negative contribution to the Petzval sum for correction of the above-mentioned positive contribution of a high refractive last optical element on the image side can be introduced.
  • at least one of said meniscus lenses is made of a fluoride crystal material, preferably calcium fluoride (CaF 2 ) .
  • the projection objective comprises three bulges, wherein each of said bulges has a maximum diameter such that the smallest one of these maximum diameters differs from the biggest one of these maximum diameters by less than 15 %, preferably less than 10 %, and with even higher preference less than 5 % (referred to said biggest diameter) .
  • This has the advantage that a more homogeneous "distribution" of the lens diameters across the whole projection objective is achieved (e.g. if compared to a system having e.g. a small bulge and a large bulge), which also contributes to the enhanced compactness of the overall system.
  • the maximum diameters of these three bulges are of substantially equal size .
  • the projection objective produces exactly one intermediate image.
  • the projection objective has an image side numerical aperture (NA) of at least 1.0, preferably at least 1.2, and with even higher preference of at least 1.4.
  • NA image side numerical aperture
  • a working wavelength of the projection objective is preferably less than 250 nm, in particular less than 200 nm, further in particular less than 160 nm.
  • the invention further relates to a microlithographic projection exposure apparatus, a method for the microlithographic manufacture of micro-structured components as well as a micro-structured component.
  • Figure 1 represents a meridional section of a complete projection objective having a purely refractive design according to a first embodiment of the present invention
  • Figure 2 represents a meridional section of a complete projection objective having a purely refractive design according to a second embodiment of the present invention.
  • Figure 3 schematically illustrates the overall design structure of a microlithographic projection exposure apparatus.
  • Figure 1 illustrates a projection objective 100 according to a first embodiment of the invention.
  • the design data of this projection objective 100 are listed in Table 1.
  • Column 1 of the table lists the reference number of each refractive or otherwise specifically distinguished optical surface
  • column 2 indicates the radius r of the surface (in mm)
  • column 3 indicates the distance (referred to as thickness) of this surface to the next-following surface (in mm)
  • column 4 indicates the material which follows that surface
  • column 6 indicates the optically usable free half-diameter of the optical component.
  • the term "track length” means the length of the projection objective from the object plane to the image plane.
  • P represents the sagittal height of the respective surface parallel to the optical axis
  • h represents the radial distance from the optical axis
  • r represents the curvature radius of the respective surface
  • K represents the conical constant
  • Cl, C2, ... represent the aspheric constants listed in Table 2.
  • the projection objective 100 of the first embodiment in a purely refractive design has a first optical subsystem 110 and a second optical subsystem 130.
  • the first optical subsystem 110 comprises, in sequence along the optical axis OA, a first negative lens group LGl of two lenses 111 and 112, a second positive lens group LG2 of lenses 113-116, and a third negative lens group LG3 of lenses 117-119.
  • the third lens group LG3 contains the first waist Wl of the projection objective 100.
  • the first optical subsystem 110 comprises further along the optical axis OA a fourth positive lens group LG4 of lenses 120, 121 and 122 as well as a first positive meniscus lens 123, behind which an intermediate image IMI is produced.
  • the intermediate image IMI is projected by the second optical subsystem 130 into the image plane IP.
  • the second subsystem 130 comprises a second positive meniscus lens 131 which is followed by an arrangement of positive lenses 132-138. Between the two meniscus lenses 123 and 131 there is a second waist W2 of the projection objective 100.
  • the planar-convex lens 138 is the last lens on the image- plane side of the projection objective 100.
  • the space between the light exit surface of this last lens 138 and the light-sensitive coating which is arranged in the image plane IP is occupied by an immersion liquid (not shown in the drawing) , cyclohexane in the present example.
  • the meniscus lenses 123, 131 and 137 are made of calcium fluoride (CaF 2 ) .
  • the last lens 138 on the image side is made of lutetium aluminum garnet (Lu 3 Al 5 Oi 2 ) .
  • the rest of the lenses are made of amorphous quartz (SiO 2 ) .
  • the projection objective 100 is in particular characterized in that it comprises no waist within the second subsystem 130 and a pronounced waist Wl in the first subsystem 110. In total, the projection objective 100 comprises two waists Wl and W2 , wherein the minimal lens diameter in the waists is less than 30 % of the respective maximum lens diameters in the adjacent bulges of the projection objective 100.
  • the contribution of the (high refractive) last lens 138 on the image side to the Petzval curvature is essentially corrected by the lenses 111, 112 of the first negative lens group LGl, the lenses 117-119 of the third negative lens group LG3 and the two meniscus lenses 123, 131 being arranged adjacent to the intermediate image IMI.
  • Figure 2 illustrates a projection objective 200 according to a second embodiment of the invention.
  • the design data of this projection objective 200 are listed in Table 3 in a format analogous to Table 1, with the radii and thicknesses given again in millimetres (mm) .
  • the surfaces which are marked in Figure 2 by short horizontal lines and specifically referred to in Table 4 are aspherically curved, wherein the curvature of these surfaces is described by the formula (1) for aspheres given herein above.
  • the projection objective 200 again in a purely refractive design, has a first optical subsystem 210 and second optical subsystem 230.
  • the first optical subsystem 210 comprises, in sequence along the optical axis OA, a first lens group LGl of a negative lens 211, a second positive lens group LG2 of lenses 212-217, and a third negative lens group LG3 of lenses 218-220.
  • the third lens group LG3 contains a first waist Wl of the projection objective 200.
  • the first subsystem 210 comprises further along the optical axis OA a fourth positive lens group LG4 of lenses 221-224 as well as a first positive meniscus lens 225, behind which an intermediate image IMI is produced.
  • This intermediate image IMI is projected by the second optical subsystem 230 into the image plane IP.
  • the second optical subsystem comprises a second positive meniscus lens 231 as well as a subsequent arrangement of positive lenses 232-234 and 236-239 and a negative lens 235.
  • the planar-convex formed lens 239 is the last lens on the image side of the projection objective 200.
  • the last lens on the image side is also made of lutetium aluminum garnet (LU3AI5O12) .
  • the rest of the lenses are made of amorphous quartz (SiO ⁇ ) .
  • the projection objective 200 is also characterized in that it comprises no waists within the second optical subsystem 230 and a pronounced waist Wl within the first optical subsystem 210. In total, the projection objective 200 comprises two waists Wl and W2 , wherein the minimum lens diameter in the waists is less than 30 % of the respective maximum lens diameters in the adjacent bulges of the projection objective 200.
  • the projection objective 100 or 200 each comprise exactly one intermediate image.
  • the existence of exactly one intermediate image is advantageous with regard to Petzval correction, the invention is not limited thereto.
  • a further intermediate image may be located in the other waist of the two waists.
  • Figure 3 schematically illustrates the overall layout of a microlithographic projection exposure apparatus.
  • a projection exposure apparatus 300 as shown in Figure 3 has an illumination device 301 and a projection objective 302.
  • the projection objective 302 comprises a lens arrangement 303 outlined only schematically, which defines an optical axis
  • a mask 304 which is held in the light path by means of a mask holder 305 is arranged between the illumination device 301 and the projection objective 302.
  • the mask 304 carries a structure in the micrometer to nanometer range which is projected by means of the projection objective 302 onto an image plane IP, reduced for example by a factor of 4 or 5.
  • a light-sensitive substrate 306 or wafer whose position is defined by a substrate holder 307 is held in the image plane IP.
  • NA 1.55 ; projection ratio: 0.25; image field: 14 mm; wavelength 193 nm; track length 1300 mm)
  • NA 1.55 ; projection ratio: 0.25; image field diameter: 14 mm; wavelength 193 nm; track length 1216 mm)

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Lenses (AREA)

Abstract

L'invention concerne un objectif de projection (100) d'un appareil d'exposition par projection microlithographique servant à projeter une image d'un masque qui peut être mis en position dans un plan objet (OP) sur une couche de revêtement photosensible qui peut être mise en position dans un plan image (IP). L'objectif de projection (100), conçu pour fonctionner en mode d'immersion, comprend dans une conception purement réfractive exactement deux tailles (W1, W2) et produit au moins une image intermédiaire (IMI).
PCT/EP2006/069423 2005-12-23 2006-12-07 Objectif de projection d'un appareil d'exposition par projection microlithographique WO2007071569A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US75378905P 2005-12-23 2005-12-23
US60/753,789 2005-12-23

Publications (1)

Publication Number Publication Date
WO2007071569A1 true WO2007071569A1 (fr) 2007-06-28

Family

ID=37762420

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2006/069423 WO2007071569A1 (fr) 2005-12-23 2006-12-07 Objectif de projection d'un appareil d'exposition par projection microlithographique

Country Status (1)

Country Link
WO (1) WO2007071569A1 (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8102508B2 (en) 2004-08-03 2012-01-24 Nikon Corporation Projection optical system, exposure apparatus, and exposure method
US8908269B2 (en) 2004-01-14 2014-12-09 Carl Zeiss Smt Gmbh Immersion catadioptric projection objective having two intermediate images
US8913316B2 (en) 2004-05-17 2014-12-16 Carl Zeiss Smt Gmbh Catadioptric projection objective with intermediate images
US9772478B2 (en) 2004-01-14 2017-09-26 Carl Zeiss Smt Gmbh Catadioptric projection objective with parallel, offset optical axes

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030030916A1 (en) * 2000-12-11 2003-02-13 Nikon Corporation Projection optical system and exposure apparatus having the projection optical system
US20050141098A1 (en) * 2002-03-08 2005-06-30 Carl Zeiss Smt Ag Very high-aperture projection objective
WO2005098504A1 (fr) * 2004-04-08 2005-10-20 Carl Zeiss Smt Ag Systeme d'imagerie comprenant un groupe de miroirs

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030030916A1 (en) * 2000-12-11 2003-02-13 Nikon Corporation Projection optical system and exposure apparatus having the projection optical system
US20050141098A1 (en) * 2002-03-08 2005-06-30 Carl Zeiss Smt Ag Very high-aperture projection objective
WO2005098504A1 (fr) * 2004-04-08 2005-10-20 Carl Zeiss Smt Ag Systeme d'imagerie comprenant un groupe de miroirs

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8908269B2 (en) 2004-01-14 2014-12-09 Carl Zeiss Smt Gmbh Immersion catadioptric projection objective having two intermediate images
US9772478B2 (en) 2004-01-14 2017-09-26 Carl Zeiss Smt Gmbh Catadioptric projection objective with parallel, offset optical axes
US8913316B2 (en) 2004-05-17 2014-12-16 Carl Zeiss Smt Gmbh Catadioptric projection objective with intermediate images
US9019596B2 (en) 2004-05-17 2015-04-28 Carl Zeiss Smt Gmbh Catadioptric projection objective with intermediate images
US9134618B2 (en) 2004-05-17 2015-09-15 Carl Zeiss Smt Gmbh Catadioptric projection objective with intermediate images
US9726979B2 (en) 2004-05-17 2017-08-08 Carl Zeiss Smt Gmbh Catadioptric projection objective with intermediate images
US8102508B2 (en) 2004-08-03 2012-01-24 Nikon Corporation Projection optical system, exposure apparatus, and exposure method

Similar Documents

Publication Publication Date Title
US7573655B2 (en) Unit magnification projection objective
US7301707B2 (en) Projection optical system and method
US8830590B2 (en) Unit magnification large-format catadioptric lens for microlithography
EP2672307A2 (fr) Système de projection optique, système et procédé dýexposition
JPH11214293A (ja) 投影光学系及び該光学系を備えた露光装置並びにデバイス製造方法
US6867922B1 (en) Projection optical system and projection exposure apparatus using the same
WO2006013734A1 (fr) Systeme de projection optique, appareil d’exposition et procede d’exposition
JP3925576B2 (ja) 投影光学系、該光学系を備えた露光装置、及び該装置を用いたデバイスの製造方法
US7965453B2 (en) Projection objective and projection exposure apparatus including the same
KR101129946B1 (ko) 액침 리소그래피용 굴절 투영 대물렌즈
US7957069B2 (en) Projection optical system
KR101432822B1 (ko) 결상 시스템, 특히 마이크로 리소그래픽 투영 조명 유닛에 사용될 수 있는 결상 시스템
EP1811327A1 (fr) Système optique à projection de type réflexion et équipement d exposition pourvu d un tel système optique à projection de type réflexion
TWI237307B (en) Optical projection system, light exposing apparatus and light exposing method
EP1980890B1 (fr) Systeme de prise d images catadioptrique, dispositif d' exposition et procede de fabrication de dispositif
EP1963921A1 (fr) Objectif de projection d'un appareil d'exposition par projection microlithographique
WO2007071569A1 (fr) Objectif de projection d'un appareil d'exposition par projection microlithographique
JP2000356741A (ja) 投影光学系
JP2009038152A (ja) 光学系、露光装置及びデバイス製造方法
JPH10197791A (ja) 投影レンズ
JP3423644B2 (ja) 投影光学系及びそれを用いた投影露光装置
JP2000121933A (ja) 投影光学系及びそれを備えた露光装置並びにデバイス製造方法
JP2004219501A (ja) 投影光学系、露光装置、および露光方法
JP2004252119A (ja) 投影光学系、露光装置、および露光方法
JP2005109286A (ja) 投影光学系、露光装置、および露光方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application
NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 06841304

Country of ref document: EP

Kind code of ref document: A1