WO2007056890A1 - Surface mounting plastic packaging diode and manufacture method of the same - Google Patents
Surface mounting plastic packaging diode and manufacture method of the same Download PDFInfo
- Publication number
- WO2007056890A1 WO2007056890A1 PCT/CN2005/001933 CN2005001933W WO2007056890A1 WO 2007056890 A1 WO2007056890 A1 WO 2007056890A1 CN 2005001933 W CN2005001933 W CN 2005001933W WO 2007056890 A1 WO2007056890 A1 WO 2007056890A1
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- wafer
- lower metal
- metal lead
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- diode
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- H01L23/495—Lead-frames or other flat leads
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Definitions
- the invention relates to a novel surface mount plastic packaging diode and a manufacturing method thereof.
- the conventional surface mount plastic packaged diode comprises an injection molded package casing 1, two metal leads 2, 3, a wafer 4 wrapped in the outer casing 1, and a gold wire 5 having a diameter of 0.0254 mm or 0.0380 mm. Composition. A part of the metal leads 2, 3 is located in the injection molded package 1 and a part is exposed outside the injection molded package 1; the metal leads 2, 3 exposed outside the case 1 can be soldered to the circuit board. The wafer 4 is wrapped inside the injection molded package 1, on a metal lead 2, and connected to the metal lead 2 by soldering. A gold wire 5 is connected between the top of the wafer 4 and a portion of the other metal lead 3 wrapped in the injection molded package 1.
- the conventional surface mount plastic diode Since the conventional surface mount plastic diode has an internal thin film 4 and a lead 3 connected by a very thin gold wire 5, the conventional surface mount plastic diode material has high cost; and, in order to protect its electricity The stability of the performance, the manufacturing process is quite complicated, the precision of the manufacturing equipment, the degree of automation are very high, and the technical requirements of the technicians are also very high, and therefore, the manufacturing cost is very high.
- the traditional surface mount plastic diodes are quite complicated in manufacturing process, and the manufacturing process includes pre- and post-process:
- wafer blanking and gold wire bonding in the previous process.
- the wafer blanking process is performed by a wafer blanker that consists of very precise parts that rely on highly automated automatic control programs and automatic positioning systems to control the movement of the machine.
- 0.024mmx0.024mm or 0.035mmx0.035mm is transferred to the lead terminal of the diode metal lead on the lead frame, and the wire is slightly rubbed at the bottom of the wafer; There is a heating device in the department.
- the tin on the back of the wafer is combined with the silver plated on the lead to become a silver-tin alloy under the friction and heating, so that the back and leads of the wafer are Tightly connected.
- the lead frame to which the wafer has been fixed is sent to the wire bonding machine.
- the wire bonding machine is a very complex and sophisticated machine. It is also composed of automatic control and automatic positioning systems and highly sophisticated parts. It can solder gold wires with a diameter of only 0.0254mm or 0.0380mm between the top of the wafer and the other metal lead of the diode.
- Another object of the present invention is to provide a novel method for manufacturing surface mount plastic diodes. The method simplifies the production process and greatly reduces the investment in manufacturing equipment.
- a surface mount plastic package diode comprising an injection molded package, a lower metal lead wrapped in the case, an upper metal lead and a wafer; a lower metal lead and an upper metal lead One portion is located inside the injection molded package and a portion is exposed outside the injection molded package; the wafer is wrapped inside the injection molded package; and is characterized by:
- the wafer is located between the upper and lower metal leads;
- the upper and lower metal leads are coated with a layer of tin paste at their contact with the wafer;
- the solder paste is melted, and the wafer and the upper and lower metal leads are directly welded together.
- the method for manufacturing a surface mount plastic packaged diode comprises the following steps: 1. The worker uses a suction tool to pick up the lead frame with a metal lead underneath, place it on the soldering base plate, and then apply a tin paddle to the end of the lower metal lead with a manual screen printing machine;
- the surface mount plastic encapsulated diode disclosed by the invention has simple structure, stable electrical performance and low cost.
- the manufacturing method disclosed in the present invention can greatly reduce the investment in production equipment, reduce the production cost, and improve the electrical performance of the surface mount plastic-sealed diode.
- FIGS. 1A and 1B are schematic diagrams showing the outer shape of a surface mount plastic diode.
- FIGS. 2A and 2B are schematic diagrams showing the internal structure of a conventional surface mount plastic diode.
- FIG. 3A and 3B are schematic diagrams showing the internal structure of a novel surface mount plastic-sealed diode of the present invention.
- FIG. 4 to FIG. 10 are schematic diagrams showing the manufacturing process of the present invention. detailed description
- the novel surface mount plastic-sealed diode disclosed by the present invention is composed of an injection-molded package 1, a lower metal lead 2, an upper metal lead 3, and a wafer 4 wrapped in the outer casing 1.
- a portion of the lower metal lead 2 and the upper metal lead 3 are located in the injection molded package 1 and a portion is exposed outside the injection molded package 1; the upper and lower metal leads 3, 2 exposed outside the case 1 may be soldered to the circuit board.
- the wafer 4 is wrapped inside the injection molded package 1, which is located between the upper and lower metal leads 3, 2, and the ends of the upper and lower metal leads 3, 2 which are in contact with the wafer 4 are coated with solder pastes 31, 21.
- the solder paste applied to the ends of the upper and lower metal leads is melted, and the wafer 4 and the upper and lower metal leads 2, 3 are directly welded together.
- the structure of the novel surface mount plastic diode disclosed by the present invention Since the inner surface of the surface mount plastic diode of the present invention is directly connected with the upper and lower metal leads, instead of the gold wire inside the conventional surface mount plastic diode, the structure of the novel surface mount plastic diode disclosed by the present invention.
- the manufacturing cost of the novel surface mount plastic-sealed diode disclosed by the present invention is simpler and simpler, and the manufacturing cost of the novel surface-mount plastic diode is more simple.
- the method of fabricating the novel surface mount plastic-sealed diodes disclosed herein provides significant improvements in wafer blanking and wafer and lead bonding, replacing expensive manufacturing equipment with manual and tooling fixtures.
- the welded base plate 6 shown in Fig. 4, the vacuum blanking plate 7 shown in Fig. 5, and the press plate 8 shown in Fig. 7 are required in the manufacturing process.
- the vacuum blanking plate 7 is a hollow peripherally sealed plate, and the vacuum blanking plate is connected to a vacuum pump through a vacuum tube 71, and a row of wafer blanking holes 72 is opened on the surface of the vacuum lowering plate 7.
- the wafer blanking aperture 72 is sized to accommodate the silver button on the top surface of the wafer 4.
- the worker picks up the lead frame with a metal lead 2 under the root using a suction tool, places it on the soldering base 6, and then applies a solder paste 21 to the end of the lower metal lead 2 by a manual screen printing machine, as shown in FIG. Show
- the vacuum cutting plate 7 is turned over and moved to the top of the splicing bottom plate 6, and the vacuum cutting plate 7 and the splicing bottom plate 6 are fixed together by the positioning pin 73, and the vacuum tube 71 is closed to cause the back of the wafer to fall to the lower metal.
- the wafer is stuck by the solder paste, as shown in FIG. 6;
- the upper metal lead frame coated with the solder paste is sucked by the worker with a suction tool, and placed on the soldering base plate 6 on which the wafer 4, the lower metal lead 2 frame and the pressing plate 8 have been placed, and the end of the upper metal lead 3 is placed. Placed on top of the silver button on the top surface of the wafer 4, as shown in Figure 9;
- the weighted pin plate 12 with the weighted pin 11 is placed on the soldering base plate 6 on which the upper and lower metal lead frames and the wafer and the platen 8 sandwiched therebetween are placed, and pressed at the position corresponding to each wafer.
- An accent pin 1 1 is provided to ensure a tight connection between the wafer and the upper and lower metal leads, as shown in FIG. 10;
- the surface mount plastic-sealed diode products produced by such a manufacturing process have completely different internal structures than conventional products.
- the wafer and the metal leads are no longer connected by gold wires, but are directly connected together; due to the action of the solder paste, the connection is very tight and firm, so the electrical performance is even better.
- the present invention uses the above process to manufacture a novel surface mount plastic-sealed diode, a manual vacuum blanking plate is used to complete the wafer blanking process, and the gold wire is eliminated in the internal structure of the diode, thereby eliminating the use of expensive wafer blanking machines and
- the wire bonding machine therefore, has the following advantages:
- the capacity of 100KK is produced by new technology.
- the former process only needs to invest 100,000 US dollars (tools 20,000 US dollars, welding furnace 2 sets a total of 80,000 US dollars). This is in contrast to the $10 million investment required for traditional technology.
- the gap is 'amazing.'
- the novel manufacturing method disclosed in the present invention directly connects the wafer to the metal lead instead of the conventional manufacturing method. - The wafer and the lead are connected by a gold wire, so that better reliability can be obtained and the electrical performance is excellent.
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Geometry (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
A surface mounting plastic packaging diode differs from the conventional surface mounting plastic packaging diode in that: the wafer of the surface mounting plastic packaging diode according to the present invention is connected to metal leads directly, but not through gold wires. Therefore, it does not use the expensive bonding equipment any more. The manufacture method of surface mounting plastic packaging diode according to the present invention completes the wafer-laying-off procedure using manual vacuum laying off board, but not using expensive wafer laying off equipment any more. The surface mounting plastic packaging diode of the present invention has simple structure, stable electrical property and low cost. Furthermore, the manufacture method of the present invention can save the invest of production equipment, reduce the production cost and improve the electrical property of the surface mounting plastic packaging diode.
Description
表面贴装塑封二极管及其制造方法 技术领域 Surface mount plastic diode and manufacturing method thereof
本发明涉及一种新型表面贴装塑封二极管及其制造方法。 The invention relates to a novel surface mount plastic packaging diode and a manufacturing method thereof.
背景技术 Background technique
随着半导体行业的迅猛发展, 作为一种小型表面贴片元件 ---表面贴装塑 封二极管在电子工业中需求量越来越大, 它被广泛地应用于手机、 便携式照相 机、 笔记本电脑和其他需要不断缩小尺寸的电子产品中。表面贴装塑封二极管 包括开关二极管、 稳压二极管、 触发二极管和其他特殊用途的二极管, 其外形 如图 1A、 图 1B所示。 With the rapid development of the semiconductor industry, as a small surface mount component - surface mount plastic diodes are increasingly demanded in the electronics industry, it is widely used in mobile phones, portable cameras, notebook computers and other Need to continue to shrink the size of electronic products. Surface mount plastic diodes include switching diodes, Zener diodes, trigger diodes, and other special purpose diodes. The outlines are shown in Figure 1A and Figure 1B.
图 2A、 图 2B为传统的表面贴装塑封二极管内部结构示意图。 如图 2A、 图 2B所示, 传统的表面贴装塑封二极管由注塑封装外壳 1、 包裹在外壳 1内 的两条金属引线 2、 3、晶片 4和直径为 0.0254mm或 0.0380mm的金线 5构成。 金属引线 2、 3的一部分位于注塑封装外壳 1内,一部分裸露在注塑封装外壳 1 的外面; 金属引线 2、 3裸露在外壳 1外的部分可以焊接在电路板上。 晶片 4 包裹在注塑封装外壳 1的内部, 位于一条金属引线 2的上面, 并通过焊接方式 与金属引线 2相连。在晶片 4的顶部与另一条金属引线 3包裹在注塑封装外壳 1内的部分之间通过金线 5相连。 2A and 2B are schematic diagrams showing the internal structure of a conventional surface mount plastic packaged diode. As shown in FIG. 2A and FIG. 2B, the conventional surface mount plastic packaged diode comprises an injection molded package casing 1, two metal leads 2, 3, a wafer 4 wrapped in the outer casing 1, and a gold wire 5 having a diameter of 0.0254 mm or 0.0380 mm. Composition. A part of the metal leads 2, 3 is located in the injection molded package 1 and a part is exposed outside the injection molded package 1; the metal leads 2, 3 exposed outside the case 1 can be soldered to the circuit board. The wafer 4 is wrapped inside the injection molded package 1, on a metal lead 2, and connected to the metal lead 2 by soldering. A gold wire 5 is connected between the top of the wafer 4 and a portion of the other metal lead 3 wrapped in the injection molded package 1.
由于这种传统的表面贴装塑封二极管其内部的晶片 4与引线 3之间是通过 一条极细的金线 5相连,所以,传统的表面贴装塑封二极管材料成本高;而且, 为了保障其电性能的稳定性, 其制造工艺相当复杂、 对制造设备的精密度、 自 动化程度要求非常高、 对技术人员的技术要求也非常高, 因此, 其制造成本非 常高。 Since the conventional surface mount plastic diode has an internal thin film 4 and a lead 3 connected by a very thin gold wire 5, the conventional surface mount plastic diode material has high cost; and, in order to protect its electricity The stability of the performance, the manufacturing process is quite complicated, the precision of the manufacturing equipment, the degree of automation are very high, and the technical requirements of the technicians are also very high, and therefore, the manufacturing cost is very high.
传统的表面贴装塑封二极管其制造工艺相当复杂,其制造流程包括前工序 和后工序: The traditional surface mount plastic diodes are quite complicated in manufacturing process, and the manufacturing process includes pre- and post-process:
前工序一一晶片下料、 金线焊接、 铸塑; The first process - wafer cutting, gold wire welding, casting;
后工序一一切割 /成型、 测试、 唛字、 包装。 Post-process one-to-one cutting/forming, testing, stenciling, packaging.
在整个制造流程中, 重点和难点是: 前工序中的晶片下料和金线悍接。 晶片下料过程是由晶片下料机完成,该晶片下料机是由一些非常精密的零 件构成, 依靠高度自动化的自动控制程序和自动定位系统控制机器的运动, 将 切割好的晶片 (面积为 0.024mmx0.024mm或 0.035mmx0.035mm)移送到引线 框架上的二极管金属引线的引线端上, 并以晶片底部轻微摩擦引线; 在引线下
部设有加热装置。 由于晶片背部已电镀了锡, 而引线接触晶片的一面也已电镀 了银, 所以, 在摩擦和加热下, 晶片背部的锡与引线上电镀的银化合而成为银 锡合金, 使晶片背部与引线紧密地连接起来。 In the entire manufacturing process, the key points and difficulties are: wafer blanking and gold wire bonding in the previous process. The wafer blanking process is performed by a wafer blanker that consists of very precise parts that rely on highly automated automatic control programs and automatic positioning systems to control the movement of the machine. 0.024mmx0.024mm or 0.035mmx0.035mm) is transferred to the lead terminal of the diode metal lead on the lead frame, and the wire is slightly rubbed at the bottom of the wafer; There is a heating device in the department. Since the back of the wafer has been plated with tin, and the side of the lead that contacts the wafer has been plated with silver, the tin on the back of the wafer is combined with the silver plated on the lead to become a silver-tin alloy under the friction and heating, so that the back and leads of the wafer are Tightly connected.
已固定好晶片的引线框架被送到焊线机上。焊线机是一种非常复杂和精密 的机器, 它也是由自动控制和自动定位系统及高度精密的零配件构成。 它可以 将直径只有 0.0254mm或 0.0380mm的金线焊接在晶片顶部和二极管另一条金 属引线之间。 The lead frame to which the wafer has been fixed is sent to the wire bonding machine. The wire bonding machine is a very complex and sophisticated machine. It is also composed of automatic control and automatic positioning systems and highly sophisticated parts. It can solder gold wires with a diameter of only 0.0254mm or 0.0380mm between the top of the wafer and the other metal lead of the diode.
由于这两种机器高度精密和自动化, 因此价格非常昂贵:单部机器即达 15 万美元, 一套前工序机器 (包括一台晶片下料机和一台悍线机) 则高达 30万 美元。 Because the two machines are highly sophisticated and automated, they are very expensive: $150,000 for a single machine and $300,000 for a pre-process machine (including a wafer loader and a twister).
一套前工序机器的最高产能仅为每周 3百万粒。 基于市场的巨大需求, 如 果计划每周生产 100百万粒, 则需要 34套(100百万 /3百万 =34套)前工序机 器, 需要的投资则为 1020万美元 (30万美元 X 34套 =1020万美元) 。 固定资 产投资相当大。 The maximum capacity of a pre-process machine is only 3 million per week. Based on the huge market demand, if you plan to produce 100 million capsules per week, you need 34 sets (100 million / 3 million = 34 sets) of pre-process machines, and the required investment is 10.2 million US dollars (300,000 US dollars X 34 Set of $ 10.2 million). Fixed assets investment is quite large.
由于这些机器高度精密和自动化, 对维护人员的技术要求也非常高, 且设 备维护成本相当昂贵。 Due to the high precision and automation of these machines, the technical requirements for maintenance personnel are also very high, and the maintenance costs of the equipment are quite expensive.
发明内容 Summary of the invention
鉴于上述原因, 本发明的目的是提供一种结构简单、 便于加工制造的新型 表面贴装塑封二极管。 In view of the above, it is an object of the present invention to provide a novel surface mount plastic packaged diode which is simple in structure and easy to manufacture.
为了克服现有表面贴装塑封二极管制造时需要巨额投资购买生产设备的 弊端和提高电性能稳定性的需要,本发明的另一目的是提供一种全新的表面贴 装塑封二极管制造方法, 该制造方法简化了生产流程, 大大降低了制造设备的 投资。 In order to overcome the drawbacks of the current investment in the manufacture of surface mount plastic diodes and the need to increase the stability of electrical performance, another object of the present invention is to provide a novel method for manufacturing surface mount plastic diodes. The method simplifies the production process and greatly reduces the investment in manufacturing equipment.
为实现上述目的, 本发明采取以下设计方案: 一种表面贴装塑封二极管, 它由注塑封装外壳、 包裹在外壳内的下金属引线、 上金属引线和晶片构成; 下 金属引线和上金属引线的一部分位于注塑封装外壳内,一部分裸露在注塑封装 外壳的外面; 所述晶片包裹在注塑封装外壳的内部; 其特征在于: To achieve the above object, the present invention adopts the following design: A surface mount plastic package diode comprising an injection molded package, a lower metal lead wrapped in the case, an upper metal lead and a wafer; a lower metal lead and an upper metal lead One portion is located inside the injection molded package and a portion is exposed outside the injection molded package; the wafer is wrapped inside the injection molded package; and is characterized by:
所述晶片位于上、 下金属引线之间; The wafer is located between the upper and lower metal leads;
所述上、 下金属引线在其与晶片接触处涂有一层锡浆; The upper and lower metal leads are coated with a layer of tin paste at their contact with the wafer;
上述结构的表面贴装塑封二极管经悍接炉加热处理后, 锡浆熔化, 将晶片 和上、 下金属引线直接焊接在一起。 After the surface mount plastic-molded diode of the above structure is heated by the splicing furnace, the solder paste is melted, and the wafer and the upper and lower metal leads are directly welded together.
本发明提供的表面贴装塑封二极管的制造方法包括以下步骤:
1、 工人用吸取工具吸取带有一根根下金属引线的引线框架, 将其放置在 焊接底板上, 然后用手动丝印机在下金属引线的端部涂上锡桨; The method for manufacturing a surface mount plastic packaged diode provided by the present invention comprises the following steps: 1. The worker uses a suction tool to pick up the lead frame with a metal lead underneath, place it on the soldering base plate, and then apply a tin paddle to the end of the lower metal lead with a manual screen printing machine;
2、 将一个个顶面带有银钮的晶片倒在真空下料板上, 用振动器振动; 由 于真空下料板上的晶片下料孔小到只能容纳晶片顶部的银钮并且银钮比重较 大, 因此, 晶片顶部银钮一端朝下落在晶片下料孔内; 然后抽真空, 落在下料 孔内的晶片便被吸附在真空下料板上, 其它多余的晶片则倒回晶片容器内; 2. Pour a wafer with a silver button on the top of the vacuum plate and shake it with a vibrator; because the wafer blank on the vacuum plate is small enough to hold the silver button on the top of the wafer and the silver button The specific gravity is large. Therefore, one end of the silver button on the top of the wafer falls into the hole of the wafer; then the vacuum is applied, and the wafer falling in the lower hole is adsorbed on the vacuum lowering plate, and the other excess wafer is returned to the wafer container. Inside;
3、 将真空下料板翻转并移到悍接底板上方, 用定位销钉将真空下料板与 悍接底板固定在一起, 关闭真空管, 则晶片背部朝下落到下金属引线上的锡浆 处, 由锡浆将晶片粘住; 3. Turn the vacuum cutting plate over and move it over the splicing bottom plate, fix the vacuum blanking plate and the splicing bottom plate with the positioning pin, close the vacuum tube, and then the back of the wafer falls to the tin slurry on the lower metal lead. Sticking the wafer by solder paste;
4、 将定位销钉插入焊接底板, 然后将压板套着定位销钉压在下金属引线 框架上; 4. Insert the positioning pin into the welding bottom plate, and then press the pressing plate on the lower metal lead frame;
5、 将带有一根根上金属引线的引线框架放到印刷底板上, 用手动丝印机 在引线端部也涂上锡桨; 5. Place the lead frame with a metal lead on the printed circuit board, and apply a tin paddle to the end of the lead with a manual screen printing machine;
6、 由工人用吸取工具吸取已涂了锡浆的上金属引线框架, 将其放置在已 放置有晶片和下金属引线框架的焊接底板上,上金属引线端部搭在晶片顶面银 钮的上面, ; 6. The upper metal lead frame to which the solder paste has been applied is sucked by the worker, and placed on the soldering base plate on which the wafer and the lower metal lead frame are placed, and the upper end of the metal lead is placed on the top of the wafer. Above, ;
7、 将带有加重销钉的加重销钉板放置在已放置有上、 下金属引线框架以 及夹在其间的晶片的焊接底板上, 在对应每粒晶片的位置处都压一根加重销 钉, 以确保晶片与上、 下金属引线之间紧密连接; 7. Place the weighted pin plate with the weighted pin on the welded base plate on which the upper and lower metal lead frames are placed and the wafer sandwiched therebetween, and press a weighted pin at the position corresponding to each wafer to ensure a tight connection between the wafer and the upper and lower metal leads;
8、将上述整套焊接工具放入悍接炉, 在 280-300°C下经过 20分钟的焊接, 使晶片和上、 下金属引线之间的锡浆熔化, 从而, 使晶片顶面的银钮、 晶片底 面分别与上、 下金属引线牢固地焊接在一起。 8. Put the whole set of welding tools into the splicing furnace and solder at 280-300 ° C for 20 minutes to melt the solder paste between the wafer and the upper and lower metal leads, thereby making the silver button on the top surface of the wafer The bottom surface of the wafer is firmly soldered to the upper and lower metal leads, respectively.
9、 将焊接好的上下金属引线和晶片放入注塑机, 注塑二极管的外壳, 最 后, 切割成型成一个个完整的二极管。 9. Place the soldered upper and lower metal leads and wafers into the injection molding machine, mold the outer casing of the diode, and finally cut into a complete diode.
本发明公开的表面贴装塑封二极管结构简单、 电性能稳定、 成本低。 本发 明公开的制造方法可大大节省生产设备的投资, 降低生产成本, 改善表面贴装 塑封二极管的电性能。 The surface mount plastic encapsulated diode disclosed by the invention has simple structure, stable electrical performance and low cost. The manufacturing method disclosed in the present invention can greatly reduce the investment in production equipment, reduce the production cost, and improve the electrical performance of the surface mount plastic-sealed diode.
附图说明 DRAWINGS
图 1A和图 1B为表面贴装塑封二极管的外形结构示意图 1A and 1B are schematic diagrams showing the outer shape of a surface mount plastic diode.
图 2A、 图 2B为传统的表面贴装塑封二极管的内部结构示意图 2A and 2B are schematic diagrams showing the internal structure of a conventional surface mount plastic diode.
图 3A和图 3B为本发明新型表面贴装塑封二极管内部结构示意图 图 4〜图 10为本发明制造过程示意图
具体实施方式 3A and 3B are schematic diagrams showing the internal structure of a novel surface mount plastic-sealed diode of the present invention. FIG. 4 to FIG. 10 are schematic diagrams showing the manufacturing process of the present invention. detailed description
如图 3A和图 3B所示, 本发明公开的新型表面贴装塑封二极管由注塑封 装外壳 1、 包裹在外壳 1内的下金属引线 2、 上金属引线 3和晶片 4构成。 下 金属引线 2和上金属引线 3的一部分位于注塑封装外壳 1内,一部分裸露在注 塑封装外壳 1的外面; 上、 下金属引线 3、 2裸露在外壳 1外的部分可以焊接 在电路板上。 As shown in Figs. 3A and 3B, the novel surface mount plastic-sealed diode disclosed by the present invention is composed of an injection-molded package 1, a lower metal lead 2, an upper metal lead 3, and a wafer 4 wrapped in the outer casing 1. A portion of the lower metal lead 2 and the upper metal lead 3 are located in the injection molded package 1 and a portion is exposed outside the injection molded package 1; the upper and lower metal leads 3, 2 exposed outside the case 1 may be soldered to the circuit board.
晶片 4包裹在注塑封装外壳 1的内部, 它位于上、 下金属引线 3、 2之间, 与晶片 4接触的上、 下金属引线 3、 2的端部都涂有锡浆 31、 21。 The wafer 4 is wrapped inside the injection molded package 1, which is located between the upper and lower metal leads 3, 2, and the ends of the upper and lower metal leads 3, 2 which are in contact with the wafer 4 are coated with solder pastes 31, 21.
上述结构的表面贴装塑封二极管经焊接炉加热处理后,涂在上、 下金属引 线端部的锡浆熔化, 将晶片 4和上、 下金属引线 2、 3直接焊接在一起。 After the surface mount plastic-molded diode of the above structure is heated by the soldering furnace, the solder paste applied to the ends of the upper and lower metal leads is melted, and the wafer 4 and the upper and lower metal leads 2, 3 are directly welded together.
由于本发明公开的表面贴装塑封二极管内部晶片与上、下金属引线之间直 接相连, 取代了传统表面贴装塑封二极管内部的金线, 所以, 本发明公开的新 型表面贴装塑封二极管的结构简单、 大大降低了产品成本, 更重要的是, 本发 明公开的新型表面贴装塑封二极管的制造工艺更简单。 Since the inner surface of the surface mount plastic diode of the present invention is directly connected with the upper and lower metal leads, instead of the gold wire inside the conventional surface mount plastic diode, the structure of the novel surface mount plastic diode disclosed by the present invention The manufacturing cost of the novel surface mount plastic-sealed diode disclosed by the present invention is simpler and simpler, and the manufacturing cost of the novel surface-mount plastic diode is more simple.
本发明公开的新型表面贴装塑封二极管的制造方法在晶片下料以及晶片 与引线焊接方面做了重大改进, 用人工和工装夹具取代昂贵的制造设备。 在制 造过程中需要用到如图 4所示的焊接底板 6、图 5中所示的真空下料板 7、图 7 中所示的压板 8。 所述真空下料板 7为一中空的四周密闭的板子, 该真空下料 板通过一真空管 71与一抽真空泵相连, 在真空下料板 7的表面开有一排排晶 片下料孔 72, 该晶片下料孔 72的大小刚好可以容纳晶片 4顶面的银钮。 The method of fabricating the novel surface mount plastic-sealed diodes disclosed herein provides significant improvements in wafer blanking and wafer and lead bonding, replacing expensive manufacturing equipment with manual and tooling fixtures. The welded base plate 6 shown in Fig. 4, the vacuum blanking plate 7 shown in Fig. 5, and the press plate 8 shown in Fig. 7 are required in the manufacturing process. The vacuum blanking plate 7 is a hollow peripherally sealed plate, and the vacuum blanking plate is connected to a vacuum pump through a vacuum tube 71, and a row of wafer blanking holes 72 is opened on the surface of the vacuum lowering plate 7. The wafer blanking aperture 72 is sized to accommodate the silver button on the top surface of the wafer 4.
利用上述工装夹具制造本发明所述的新型表面贴装塑封二极管的具体流 程如下- The specific process for manufacturing the novel surface mount plastic-sealed diode of the present invention using the above fixtures is as follows -
1、 工人用吸取工具吸取带有一根根下金属引线 2的引线框架, 将其放置 在焊接底板 6上,然后用手动丝印机在下金属引线 2的端部涂上锡浆 21 ,如图 4所示; 1. The worker picks up the lead frame with a metal lead 2 under the root using a suction tool, places it on the soldering base 6, and then applies a solder paste 21 to the end of the lower metal lead 2 by a manual screen printing machine, as shown in FIG. Show
2、将一个个顶面带有银钮的晶片 4倒在真空下料板 7上, 用振动器振动; 由于真空下料板 Ί上的晶片下料孔 72小到只能容纳晶片顶部的银纽并且银钮 比重较大, 因此, 晶片顶部银钮一端朝下落在晶片下料孔 72内; 然后抽真空, 落在下料孔内的晶片便被吸附在真空下料板 7上,其它多余的晶片则倒回晶片 容器内, 如图 5所示; 2. Pour a wafer 4 with a silver button on the top surface onto the vacuum lowering plate 7 and vibrate with a vibrator; since the wafer blanking hole 72 on the vacuum lowering plate is small enough to accommodate only the silver at the top of the wafer. The silver button has a large specific gravity, so that the silver button on the top of the wafer is dropped toward the wafer blank hole 72; then the vacuum is applied, and the wafer falling in the lower hole is adsorbed on the vacuum lowering plate 7, and the other excess The wafer is then retracted into the wafer container, as shown in Figure 5;
3、将真空下料板 7翻转并移到悍接底板 6上方, 用定位销钉 73将真空下 料板 7与悍接底板 6固定在一起,关闭真空管 71,使晶片背部朝下落到下金属
引线上的锡浆 21处, 由锡浆将晶片粘住, 如图 6所示; 3. The vacuum cutting plate 7 is turned over and moved to the top of the splicing bottom plate 6, and the vacuum cutting plate 7 and the splicing bottom plate 6 are fixed together by the positioning pin 73, and the vacuum tube 71 is closed to cause the back of the wafer to fall to the lower metal. At the solder paste 21 on the lead, the wafer is stuck by the solder paste, as shown in FIG. 6;
4、将定位销钉 9插入焊接底板 6,然后将压板 8套着定位销钉压在下金属 引线 2框架上, 如图 7所示; 4. Insert the positioning pin 9 into the welding bottom plate 6, and then press the pressing plate 8 on the lower metal lead 2 frame, as shown in Fig. 7;
5、 将带有一根根上金属引线 3的引线框架放到印刷底板 10上, 用手动丝 印机在引线端部也涂上锡浆 31 , 如图 8所示; 5. Place the lead frame with a metal lead 3 on the printed circuit board 10, and apply a solder paste 31 to the end of the lead with a manual screen printing machine, as shown in Fig. 8;
6、 由工人用吸取工具吸取已涂了锡浆的上金属引线框架, 将其放置在已 放置有晶片 4、 下金属引线 2框架和压板 8的焊接底板 6上, 将上金属引线 3 端部搭在晶片 4顶面银钮的上面, 如图 9所示; 6. The upper metal lead frame coated with the solder paste is sucked by the worker with a suction tool, and placed on the soldering base plate 6 on which the wafer 4, the lower metal lead 2 frame and the pressing plate 8 have been placed, and the end of the upper metal lead 3 is placed. Placed on top of the silver button on the top surface of the wafer 4, as shown in Figure 9;
7、 将带有加重销钉 1 1的加重销钉板 12放置在已放置有上、 下金属引线 框架以及夹在其间的晶片和压板 8的焊接底板 6上, 在对应每粒晶片的位置处 都压着一根加重销钉 1 1, 以确保晶片与上、 下金属引线之间紧密连接, 如图 10所示; 7. The weighted pin plate 12 with the weighted pin 11 is placed on the soldering base plate 6 on which the upper and lower metal lead frames and the wafer and the platen 8 sandwiched therebetween are placed, and pressed at the position corresponding to each wafer. An accent pin 1 1 is provided to ensure a tight connection between the wafer and the upper and lower metal leads, as shown in FIG. 10;
8、将上述整套焊接工具放入焊接炉, 在 280-300Ό下经过 20分钟的悍接, 使上、 下金属引线端部的锡桨熔化, 从而, 使晶片顶面的银钮、 晶片底面分别 与上、 下金属引线牢固地焊接在一起; 8. Put the whole set of welding tools into the welding furnace, and after 20 minutes of splicing at 280-300 ,, the tin paddles at the ends of the upper and lower metal leads are melted, so that the silver button on the top surface of the wafer and the bottom surface of the wafer are respectively Firmly welded to the upper and lower metal leads;
9、 将焊接好的上下金属引线和晶片放入注塑机, 注塑二极管外壳, 最后, 切割成型成一个个完整的二极管。 9. Place the soldered upper and lower metal leads and wafers into the injection molding machine, mold the diode casing, and finally cut into a complete diode.
根据客户的不同要求采用不同的模具, 制成不同外观的产品, 当使用单向 注塑时, 下金属引线的下凹点可确保下金属引线的晶片端外侧也有塑胶保护, 其外露的引线不需弯曲而可以直接悍接在电路板上, 如图 3A所示; 当使用双 向注塑时, 则需将引线弯脚, 如图 3B所示。 According to different requirements of customers, different molds are used to make products with different appearances. When using one-way injection molding, the undercut of the lower metal lead ensures plastic protection on the outer side of the lower end of the metal lead, and the exposed leads are not required. Bend can be directly connected to the circuit board, as shown in Figure 3A; when using bi-directional injection molding, the lead wire needs to be bent, as shown in Figure 3B.
经过这样的制造流程生产的表面贴装塑封二极管产品,其内部结构与传统 的产品相比完全不同。 晶片与金属引线之间不再通过金线相连, 而是直接连接 在一起; 由于锡浆的作用, 这种连接非常紧密而牢固, 因此其电性能表现更加 出色。 The surface mount plastic-sealed diode products produced by such a manufacturing process have completely different internal structures than conventional products. The wafer and the metal leads are no longer connected by gold wires, but are directly connected together; due to the action of the solder paste, the connection is very tight and firm, so the electrical performance is even better.
由于本发明釆用上述工艺制造新型表面贴装塑封二极管,使用手动的真空 下料板完成晶片下料工序, 并在二极管内部结构中取消了金线, 因而不再使用 昂贵的晶片下料机和焊线机, 故, 本发明具有以下优点: Since the present invention uses the above process to manufacture a novel surface mount plastic-sealed diode, a manual vacuum blanking plate is used to complete the wafer blanking process, and the gold wire is eliminated in the internal structure of the diode, thereby eliminating the use of expensive wafer blanking machines and The wire bonding machine, therefore, has the following advantages:
1、 大大减少了设备投资规模 1. Significantly reduced equipment investment scale
本发明公开的新制造方法与传统技术相比, 投资规模大大降低。 以每周 Compared with the conventional technology, the new manufacturing method disclosed by the present invention greatly reduces the investment scale. Weekly
100KK的产能为例, 以新技术生产, 前工序只需投资 10万美元 (工具 2万美 元, 焊接炉 2台共 8万美元) 。 这与传统技术所需的 1000万美元的投资相比,
差距是 '惊人的。 For example, the capacity of 100KK is produced by new technology. The former process only needs to invest 100,000 US dollars (tools 20,000 US dollars, welding furnace 2 sets a total of 80,000 US dollars). This is in contrast to the $10 million investment required for traditional technology. The gap is 'amazing.'
2、 改善了电性能 2, improved electrical performance
本发明公开的新的制造方法, 使晶片与金属引线之间直接相连, 取代了传 统的制造方法… -用金线连接晶片和引线, 因而可以获得更好的可靠性, 电性 能表现非常出色。 The novel manufacturing method disclosed in the present invention directly connects the wafer to the metal lead instead of the conventional manufacturing method. - The wafer and the lead are connected by a gold wire, so that better reliability can be obtained and the electrical performance is excellent.
3、 降低了成本 3, reduced costs
当使用新方法时, 不再需要昂贵的金线, 且制造流程非常简单, 对操作人 员和技术人员的技术要求不高, 从而大大降低了制造成本和管理成本。 When the new method is used, expensive gold wires are no longer needed, and the manufacturing process is very simple, and the technical requirements for operators and technicians are not high, thereby greatly reducing manufacturing costs and management costs.
以上所述是本发明的具体实施方式及所运用的技术原理,任何基于本发明 技术方案基础上的等效变换, 均属于本发明保护范围之内。
The above is a specific embodiment of the present invention and the technical principle applied thereto, and any equivalent transformation based on the technical solution of the present invention is within the protection scope of the present invention.
Claims
1、 一种表面贴装塑封二极管, 它由注塑封装外壳、 包裹在外壳内的下金 属引线、 上金属引线和晶片构成; 下金属引线和上金属引线的一部分位于注塑 封装外壳内, 一部分裸露在注塑封装外壳的外面; 所述晶片包裹在注塑封装外 壳的内部, 其特征在于: A surface mount plastic package diode comprising an injection molded package, a lower metal lead wrapped in the outer casing, an upper metal lead and a wafer; a portion of the lower metal lead and the upper metal lead are located in the injection molded package, and a portion is exposed The outer surface of the injection molded package; the wafer is wrapped inside the injection molded package, and is characterized by:
所述晶片位于上、 下金属引线之间; The wafer is located between the upper and lower metal leads;
所述上、 下金属引线在其与晶片接触处涂有一层锡浆; The upper and lower metal leads are coated with a layer of tin paste at their contact with the wafer;
所述晶片和上、 下金属引线直接悍接在一起。 The wafer and the upper and lower metal leads are directly spliced together.
2、 一种表面贴装塑封二极管的制造方法, 它包括以下步骤- 2. A method of manufacturing a surface mount plastic diode comprising the following steps -
( 1 ) 、 工人用吸取工具吸取带有一根根下金属引线的引线框架, 将其放 置在焊接底板上, 然后用手动丝印机在下金属引线的端部涂上锡浆; (1) The worker picks up the lead frame with a metal lead under the suction tool, places it on the soldering base plate, and then applies a tin paste to the end of the lower metal lead with a manual screen printing machine;
( 2) 、 将一个个顶面带有银钮的晶片倒在真空下料板上, 用振动器振动; 由于真空下料板上的晶片下料孔小到只能容纳晶片顶部的银纽并且银钮比重 较大, 因此, 晶片顶部银钮一端朝下落在晶片下料孔内; 然后抽真空, 落在下 料孔内的晶片便被吸附在真空下料板上, 其它多余的晶片则倒回晶片容器内; (2) Pour a wafer with a silver button on the top on a vacuum blanking plate and vibrate with a vibrator; since the wafer blanking hole on the vacuum blanking plate is small enough to accommodate the silver core at the top of the wafer and The silver button has a large specific gravity. Therefore, the silver button on the top of the wafer falls toward the bottom of the wafer; then the vacuum is applied, and the wafer falling in the lower hole is adsorbed on the vacuum lowering plate, and the other excess wafers are retracted. Inside the wafer container;
( 3 ) 、 将真空下料板翻转并移到焊接底板上方, 用定位销钉将真空下料 板与焊接底板固定在一起, 关闭真空管, 使晶片背部朝下落到下金属引线上的 锡浆处, 由锡浆将晶片粘住; (3), flip the vacuum cutting plate and move it over the welding bottom plate, fix the vacuum cutting plate and the welding bottom plate with the positioning pin, close the vacuum tube, and make the back of the wafer fall to the tin slurry on the lower metal lead. Sticking the wafer by solder paste;
(4) 、 将定位销钉插入焊接底板, 然后将压板套着定位销钉压在下金属 引线框架上; (4) inserting the positioning pin into the welding bottom plate, and then pressing the pressing plate with the positioning pin on the lower metal lead frame;
( 5 ) 、 将带有一根根上金属引线的引线框架放到印刷底板上, 用手动丝 印机在引线端部也涂上锡浆; (5) placing a lead frame with a metal lead on the printed substrate, and applying a solder paste to the end of the lead using a manual screen printer;
( 6 ) 、 由工人用吸取工具吸取已涂了锡浆的上金属引线框架, 将其放置 在已放置有晶片、 下金属引线框架和压板的焊接底板上,上金属引线端部搭在 晶片顶面银钮的上面, ; (6), the worker uses a suction tool to suck the upper metal lead frame coated with the solder paste, and places it on the soldering base plate on which the wafer, the lower metal lead frame and the pressure plate are placed, and the upper metal lead end is placed on the top of the wafer. Above the silver button;
( 7) 、 将带有加重销钉的加重销钉板放置在已放置有上、 下金属引线框 架以及夹在其间的晶片和压板的的悍接底板上,在对应每粒晶片的位置处都压 着一根加重销钉, 以确保晶片与上、 下金属引线之间紧密连接; (7) placing the weighted pin plate with the weighted pin on the splicing plate on which the upper and lower metal lead frames and the wafer and the platen sandwiched therebetween are placed, and pressed at the position corresponding to each wafer An accent pin to ensure a tight connection between the wafer and the upper and lower metal leads;
( 8) 、 将上述整套焊接工具放入焊接炉, 在 280-300Ό下经过 20分钟的 焊接, 使晶片和上、 下金属引线之间的锡浆熔化, 从而, 使晶片顶面的银钮、 晶片底面分别与上、 下金属引线牢固地悍接在一起; (8) Put the whole set of welding tools into the welding furnace and weld them at 280-300 经过 for 20 minutes to melt the solder paste between the wafer and the upper and lower metal leads, thereby making the silver button on the top surface of the wafer. The bottom surface of the wafer is firmly spliced together with the upper and lower metal leads;
( 9) 、 将悍接好的上下金属引线和晶片放入注塑机, 注塑二极管的外壳, 最后, 切割成型成一个个完整的二极管。
(9) Put the spliced upper and lower metal leads and wafers into the injection molding machine, mold the outer casing of the diode, and finally cut into a complete diode.
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011032538A2 (en) * | 2009-09-17 | 2011-03-24 | Pac Tech - Packaging Technologies Gmbh | Diode array and method for producing a diode array |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5023702A (en) * | 1988-03-05 | 1991-06-11 | Deutsche Itt Industries Gmbh | Semiconductor device, method of manufacturing the same, and apparatus for carrying out the method |
CN2258319Y (en) * | 1995-11-27 | 1997-07-23 | 钟运辉 | Diode capable of being stuck on circuit board |
CN2328099Y (en) * | 1997-11-27 | 1999-07-07 | 阮建民 | Direct welded flat plastic sealed diode |
US6008535A (en) * | 1998-09-17 | 1999-12-28 | Advanced Ceramic X Corp. | Method of making a semiconductor diode from laminated ceramic tape |
US6642078B2 (en) * | 2000-08-28 | 2003-11-04 | Transpo Electronics, Inc. | Method for manufacturing diode subassemblies used in rectifier assemblies of engine driven generators |
CN1133205C (en) * | 2000-06-13 | 2003-12-31 | 许胜雄 | Process for preparing diode with ceramic substrate and crystal grain structure |
-
2005
- 2005-11-16 WO PCT/CN2005/001933 patent/WO2007056890A1/en active Application Filing
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5023702A (en) * | 1988-03-05 | 1991-06-11 | Deutsche Itt Industries Gmbh | Semiconductor device, method of manufacturing the same, and apparatus for carrying out the method |
CN2258319Y (en) * | 1995-11-27 | 1997-07-23 | 钟运辉 | Diode capable of being stuck on circuit board |
CN2328099Y (en) * | 1997-11-27 | 1999-07-07 | 阮建民 | Direct welded flat plastic sealed diode |
US6008535A (en) * | 1998-09-17 | 1999-12-28 | Advanced Ceramic X Corp. | Method of making a semiconductor diode from laminated ceramic tape |
CN1133205C (en) * | 2000-06-13 | 2003-12-31 | 许胜雄 | Process for preparing diode with ceramic substrate and crystal grain structure |
US6642078B2 (en) * | 2000-08-28 | 2003-11-04 | Transpo Electronics, Inc. | Method for manufacturing diode subassemblies used in rectifier assemblies of engine driven generators |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011032538A2 (en) * | 2009-09-17 | 2011-03-24 | Pac Tech - Packaging Technologies Gmbh | Diode array and method for producing a diode array |
WO2011032538A3 (en) * | 2009-09-17 | 2012-01-05 | Pac Tech - Packaging Technologies Gmbh | Diode array and method for producing a diode array |
US8742571B2 (en) | 2009-09-17 | 2014-06-03 | PAC Tech—Packaging Technologies GmbH | Diode array and method for producing a diode array |
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