JPH07211847A - Semiconductor device, its manufacture, its mounting structure and mounting method - Google Patents

Abstract

PURPOSE:To provide a semiconductor device wherein semiconductor devices can be arranged most densely on a circuit board, by the dimension as approximate as possible to the dimension of a semiconductor element, and the manufacturing method, the mounting structure, and a method of mounting the semiconductor device. CONSTITUTION:A semiconductor element 8, a plurality of metal thin wires 51, and a sealing part 1 of insulative resin which seals the semiconductor element 8, the metal thin wires 51, and connection parts of them are formed. One end portion of the metal thin wire 51 is exposed on the main surface 2 of the sealing part 1, and the exposed part is turned into an external electrode.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device suitable for being mounted on a circuit board such as a printed circuit wiring board as densely as possible, a method for manufacturing the same, a structure for mounting the same, and a method for mounting the same. is there.

[0002]

2. Description of the Related Art FIG. 15 is a perspective view showing a conventional semiconductor device. In FIG. 15, reference numeral 1 denotes a sealing portion in which an insulating resin is sealed by transfer molding. As shown in FIG. 16, one main surface (lower surface) 2, another main surface (upper surface) 3 and a side surface 4 are formed. Reference numeral 5 denotes an external electrode lead projecting outward from the side surface 4, which is bent downward from the central portion of the side surface 4, one end portion 6 of which is bent in a semicircular shape and the tip of which is the main surface 2. It touches the periphery. The other end portion 7 of the external electrode lead 5 extends into the sealing portion 1, and its tip 7a is electrically connected to an electrode (not shown) of the semiconductor element 8 by a thin metal wire 9 made of gold or the like. This structure is called a LOC (Lead on Chip) structure, and the external electrode lead 5 is formed on the surface of the semiconductor element 8.
In the structure in which the tip 7a is extended and connected by the thin metal wire 9, the thickness of the resin encapsulation on the side surface of the semiconductor element 8 can be reduced, and the dimension of the encapsulation portion 1 can be reduced.

This semiconductor device, as shown in FIG.
Generally, it is mounted on a printed circuit wiring board (circuit board) 11 and used. This semiconductor device is printed circuit board 11
In order to mount it on the printed circuit wiring board 11, one end portion 6 of the external electrode lead 5 is aligned and placed on the electrode pad 12 provided on the surface of the printed circuit wiring board 11, and an adhesive material 13 such as solder is used.
Is used to fix the one end 6 to the electrode pad 12, mechanically,
Connect electrically.

By the way, in the above-described semiconductor device, the external electrode lead 5 is formed so as to project from the side surface 4. Therefore, when a large number of the semiconductor devices are arranged side by side on the printed circuit wiring board 11, the printed circuit is arranged. The occupied width of the semiconductor device on the wiring board 11 is W ′ as shown in FIG. 16, which needs to be wider than the width W of the sealing portion 1 of the semiconductor device. Further, the dimension W ″ (FIG. 17) of the electrode pad 12 on the surface of the printed circuit wiring board 11 needs to be larger than the connecting portion of the one end portion 6 of the external electrode lead 5 of the device,
The width W'needed for the device must be further increased.
Therefore, the semiconductor devices are closely arranged in the printed circuit wiring board 11
There was a drawback that I could not line up.

Therefore, a semiconductor device as shown in FIGS. 18 and 19 has been proposed as a semiconductor device which solves this drawback. This semiconductor device is composed of a base portion 21 having a protrusion-shaped external electrode 20 formed on one main surface 2 and a sealing resin 22 covering the other main surface of the base portion 21. The base portion 21 is made of a laminated glass epoxy resin circuit board or the like, and is formed from the external electrode 20 formed on the one main surface (lower surface) 2 to a via hole 23 formed inside the base portion 21 and an internal wiring 24. It is electrically connected to the electrode pad 25 provided on the other main surface of the portion. The semiconductor element 8 is fixed to the base portion 21, and an electrode (not shown) of the semiconductor element 8 and an electrode pad 25 of the base portion 21 are electrically connected to each other by a thin metal wire 9 to form an external electrode 20 of the semiconductor device. Connected with. In this semiconductor device, since the external electrode leads do not protrude from the side surface of the semiconductor device, it is not necessary to make it larger than the width dimension of the device, and there is an advantage that it can be densely arranged on the printed circuit wiring board 11.

[0006]

Since the conventional improved semiconductor device is constructed as described above, it is necessary to connect the semiconductor element 8 and the electrode pad 25 with the thin metal wire 9 and the sealing portion. There is a problem that the size of 1 is larger than the size of the semiconductor element 8. Further, in this semiconductor device, since the external electrodes 20 are formed in a protruding shape on the one main surface 2 of the device, it is difficult to make contact when the contact terminals of the test device are aligned when testing the semiconductor device. was there. The state of this test will be described with reference to the drawings. Figure 20
FIG. 4 is a side view showing how the semiconductor device is tested. In the figure, 30 is a contact terminal to the semiconductor device of the test device for testing the semiconductor device. The contact terminals 30 have sharp tips and are arranged on the main surface 2 of the semiconductor device.
To contact. At this time, if the external electrode 20 projects from the main surface 2 of the semiconductor device, the tip of the contact terminal 30 slips on the surface of the external electrode 20 and is easily disengaged from the external electrode 20. There was a problem such as the problem of not contacting with.

Furthermore, when this semiconductor device is mounted on the printed circuit wiring board 11, since the external electrodes 20 are larger than the size of the electrode pads 12 on the printed circuit wiring board 11, the reliability of the joint portion after mounting is improved. There were drawbacks such as problems. This situation will be described with reference to the drawings. Figure 21
FIG. 4 is a side sectional view showing a state in which a semiconductor device having an external electrode 20 formed on one main surface 2 (the internal structure of the semiconductor device is not shown) is mounted on printed circuit wiring board 11. FIG. 22 is an enlarged sectional view showing a state in which the external electrodes 20 of the semiconductor device are connected to the electrode pads 12 of the printed circuit wiring board 11. Since the external electrode 20 is generally smaller than the electrode pad 12, thermal strain occurs at the electrode bonding portion due to the difference in thermal expansion coefficient between the constituent materials of the semiconductor device and the printed circuit wiring board 11. This distortion mainly occurs in the upper and lower parts of the adhesive material 13, and is smaller than the external electrode 20 of the semiconductor device, which is smaller than the electrode pad 12 side of the large-sized printed circuit wiring board 11.
It tends to occur on the side. Therefore, there is a problem that thermal strain is accumulated on the side of the external electrode 20 and finally the crack 13a is generated, resulting in destruction of the joint portion.

The semiconductor device is mounted on the printed circuit wiring board 11
In the case of fixing to, a holding material such as an adhesive flux is used. Here, a method of mounting the semiconductor device on the printed circuit wiring board 11 will be described. 23 is a diagram showing a method of mounting a semiconductor device having external electrodes 20, 20, ... Formed on one main surface 2 on a printed circuit wiring board 11. In the figure, reference numeral 41 denotes the printed circuit wiring. It is a holding material such as a flux for holding the semiconductor device until it is aligned on the plate 11 and fixed by solder, and activates the solder when the solder is heated and melted and fixed. Also, the external electrodes 20 of the semiconductor device are coated with a sufficient amount of solder to connect to the printed circuit wiring board 11.

In this method, first, the holding material 41 is dropped so as to cover the electrode pads 12, 12, ... Of the printed circuit wiring board 11 (FIG. 1 (a)). At this time, the holding material 4
1 has a substantially hemispherical shape due to surface tension. Next, the semiconductor device is moved onto the electrode pads 12, 12, ... For alignment, and the semiconductor device is mounted on these electrode pads 12, 12 ,. In this state, the holding material 41 fills the gap between the printed circuit wiring board 11 and the semiconductor device, and its adhesiveness holds the one main surface 2 of the semiconductor device and the surface of the printed circuit wiring board 11 so as not to move. Then, by heating the whole, the solder of the external electrode 20 of the semiconductor device is melted and wets the surface of the electrode pad 12 of the printed circuit wiring board 11. By cooling to room temperature in this state, the solder is solidified and the semiconductor device is fixed to the printed circuit wiring board 11.

This method requires a step of dropping the holding material 41 on the position where the semiconductor device is mounted on the printed circuit wiring board 11, and the holding material 41 remaining after solder bonding is used.
Had to be removed by washing, which had the drawback of requiring an extra step. In addition, the external electrode 2 of the semiconductor device
If there is a variation in height of 0, the external electrode 20 having a low height is not joined to the electrode pad 12 and there is a drawback that a connection failure occurs.

As another method of mounting the semiconductor device on the printed circuit wiring board 11, a method of applying an adhesive material such as solder or conductive adhesive resin on the printed circuit wiring board 11 and using it is used. There is. FIG. 24 is a view showing another method of mounting the semiconductor device on the printed circuit wiring board 11, in which reference numeral 42 is a member for mechanically and electrically fixing the external electrode 20 onto the electrode pad 12 by soldering,
It is an adhesive material made of a conductive adhesive resin or the like.

In this method, first, an adhesive material 42 is patterned on the electrode pads 12, 12, ... To which the external electrodes 20, 20, ... Of the semiconductor device are connected by screen printing or the like (see FIG. a)). Next, the semiconductor device is moved onto the electrode pads 12, 12, ... For alignment, and the semiconductor device is placed on these electrode pads 12, 12 ,. In this state,
The patterned adhesive material 42 adheres to the external electrodes 20 of the semiconductor device and holds the semiconductor device stationary on the printed circuit wiring board 11. When the distance between the electrode pads 20 is small or when the amount of the adhesive material 42 is too large, the adjacent patterns of the adhesive material 42 are brought into contact with each other to form a short portion 42a. By heating in this state, the external electrodes 20 of the semiconductor device and the electrode pads 12 of the printed circuit wiring board 11 are connected.

This method has an advantage that even if there is a slight variation in the height of the external electrode 20, the variation can be absorbed and the bonding can be successfully performed. However, if the pitch of the external electrode 20 becomes narrow, patterning of the adhesive material 42 or However, when mounting the semiconductor device, the patterns of the adhesive material 42 adjacent to each other are likely to come into contact with each other, and the contact portion remains as it is even after heating and fixing, so that there is a problem in that an electrical short defect is likely to occur.

The present invention has been made to solve the above problems, and the inventions of claims 1 to 10 are semiconductors which can be arranged on a circuit board as close as possible to the size of a semiconductor element and on a circuit board as densely as possible. It is an object of the present invention to obtain a device, and the invention of claims 11 to 15 aims to provide a manufacturing method suitable for this semiconductor device,
Further, the invention of claim 16 aims at obtaining a mounting structure of a semiconductor device in which the reliability of the entire configuration is improved, and the invention of claim 17 further mounts the semiconductor device on a circuit board with high reliability. The purpose is to provide.

[0015]

A semiconductor device according to the invention of claim 1 is a semiconductor device having an electronic circuit,
A plurality of metal strips that are electrically connected to the semiconductor element and have one end as an external electrode, and the semiconductor element and the plurality of metals so that the one end is exposed on one main surface of the sealing surface. It is provided with a strip and a sealing portion which seals a connecting portion between the semiconductor element and the metal strip and is made of a resin having an insulating property.

Further, in a semiconductor device according to a second aspect of the present invention, at least a part of the metal strip is bent stepwise.

According to a third aspect of the present invention, in a semiconductor device, a plurality of metal strips are provided, and one end portion is provided with a plurality of long strip strips arranged at a peripheral portion on the one main surface. The plurality of short strips arranged on the one main surface in the region inside the peripheral portion and shorter than the long strips.

Further, in the semiconductor device according to the invention of claim 4, the tip portion of the one end portion is bent in the surface direction of the one main surface, and the outer surface of the tip portion serves as an external electrode.

Further, a semiconductor device according to a fifth aspect of the present invention is a semiconductor element having an electronic circuit formed thereon and a projection electrically connected to the semiconductor element and serving as an external electrode at a predetermined position from the connection portion. A plurality of metal strips having a plurality of metal strips, and the semiconductor element, the plurality of metal strips, and the semiconductor element and the metal strips so that at least a part of the protrusion is exposed or projected on one main surface of the sealing surface. And a sealing portion made of a resin having an insulating property.

According to a sixth aspect of the present invention, there is provided a semiconductor device in which an electronic circuit is formed, a semiconductor element and the semiconductor element are electrically connected to the semiconductor element and are bent from the connection portion to a predetermined position by a predetermined length. A plurality of metal strips each having a bent portion that serves as an external electrode, and the semiconductor element and the plurality of metals so that at least a part of the bent portion is exposed or projected on one main surface of the sealing surface. It is provided with a strip and a sealing portion which seals a connecting portion between the semiconductor element and the metal strip and is made of a resin having an insulating property.

Further, in the semiconductor device according to the invention of claim 7, the surface of the external electrode is recessed with respect to the one main surface.

Further, in the semiconductor device according to the invention of claim 8, a metal layer having good wettability with the adhesive material and fixed to the adhesive material is formed around the external electrode on the one main surface. It was done.

According to a ninth aspect of the present invention, in a semiconductor device, a region portion of the one main surface where the external electrode is not provided has good wettability with an adhesive material and is fixed to the adhesive material. The metal layer is formed.

In the semiconductor device according to the invention of claim 10, the adhesive material is one of paste-like solder and sheet-like solder.

According to the eleventh aspect of the present invention, there is provided a method of manufacturing a semiconductor device, which comprises a connecting step of electrically connecting a semiconductor device having an electronic circuit formed thereon and a plurality of metal strips serving as external leads, and the metal. The metal strips are arranged such that one main surface of the strips is exposed to one main surface of the sealing surface, and the semiconductor element, the plurality of metal strips, and the connecting portion between the semiconductor element and the metal strips are arranged. A sealing step of sealing with an insulative resin, a bending step of bending a part of the exposed portion of the metal strip above the surface of the sealed resin, and a bending step. And a cutting step of cutting the metal strip into a predetermined length.

According to a twelfth aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: a semiconductor element having an electronic circuit formed thereon; and a plurality of metal strips each having a projection at a predetermined position from the tip. A connecting step of electrically connecting and arranging the metal strip so that at least a part of the protrusion is exposed or projected from one main surface of the sealing surface, and the semiconductor element, the plurality of metal strips, and the semiconductor A sealing step of sealing the connection between the element and the metal strip with a resin having an insulating property, and a cutting step of cutting a portion of the metal strip extending outward from the sealing surface along the sealing surface. It is equipped with and.

According to a thirteenth aspect of the present invention, there is provided a method of manufacturing a semiconductor device, wherein a semiconductor element having an electronic circuit formed therein and a bent portion which is an external electrode by bending a predetermined length from a tip portion to a predetermined position. A connecting step of electrically connecting each of the tip ends of the plurality of metal strips having the metal strips to expose or project at least a part of the bent portion from one main surface of the sealing surface. A sealing step of arranging and sealing the semiconductor element, a plurality of metal strips and a connecting portion between the semiconductor element and the metal strip with a resin having an insulating property; And a cutting step of cutting a portion extending to the direction along the sealing surface.

According to a fourteenth aspect of the present invention, in the method of manufacturing a semiconductor device according to the first aspect, the encapsulation step is a dent having a depth shallower than the height of either the protrusion or the bent portion. A first mold body, which is an upper mold of a mold in which a recess is formed, and a mold, in which a second recess, which is a recess for accommodating the semiconductor element, is formed at a position facing the first recess on one surface. Using the sealing mold having a second mold body which is a lower mold of the mold, the semiconductor element is housed in the second recess, and the first mold is used.
The one face of the mold body and the one face of the second mold body are opposed to and brought into close contact with each other so that the metal strip is held and the upper end of any one of the protrusion or the bent portion is fixed to the first face. This is a resin sealing step of press-contacting the bottom surface of the recess and injecting the resin into the resin sealing region surrounded by the first recess and the second recess.

According to a fifteenth aspect of the present invention, in the method of manufacturing a semiconductor device according to the first aspect, the encapsulation step is a dent having a depth shallower than the height of either the protrusion or the bent portion. A recess is formed so that the projection or the upper end of the bent portion projects from the sealing surface at a position corresponding to the upper end of the projection or the bent portion on the bottom surface of the first recess. A first mold body, which is an upper mold of a mold in which a storage part for storing the upper end part is formed, and a recess that stores the semiconductor element at a position facing the first recessed part on one surface.
Using a sealing mold having a second mold body which is a lower mold of the mold in which the recess is formed, the semiconductor element is housed in the second recess, and the first mold body is used. One side and the second
The one side of the mold body is made to face and closely adhere to the metal strip, and the upper end of either the protrusion or the bent portion is stored in the storage portion. This is a resin sealing step of injecting the resin into a resin sealing region surrounded by two concave portions.

Further, in the semiconductor device mounting structure according to the sixteenth aspect of the present invention, a plurality of external electrodes and a metal layer having good wettability to the adhesive material and fixed to the adhesive material are provided on one main surface. A semiconductor device having: a circuit board having an electrode pad for mounting the external electrode on one surface and a fixing pad for fixing the metal layer; and the metal layer and the fixing pad spread over the entire surface of each. And an adhesive material that is fixed in the state and has a fixed height lower than the height of the external electrode.

According to a seventeenth aspect of the present invention, there is provided a method of mounting a semiconductor device, wherein a plurality of external electrodes provided on one main surface of the semiconductor device are respectively mounted on the plurality of electrode pads, and the one main surface is provided. An area occupied by the adhesive material is smaller than the area of the fixing pad on the fixing pad of the circuit board having a fixing pad for fixing the metal layer, and the height is higher than the height of the external electrode. An adhesion step of adhering an adhesive material that has high wettability and adheres to the metal layer so that the metal layer is on the adhesive material, and the external electrode is on the electrode pad. A mounting step of aligning the semiconductor device on the substrate and mounting the semiconductor device on the circuit board, and spreading the adhesive material on the entire surface of each of the metal layer and the fixing pad, and Adhesion Together to fix the metal layer via a charge, in which a connecting step of connecting the external electrode to the electrode pad.

[0032]

According to the semiconductor device of the present invention, a plurality of metal strips each having one end serving as an external electrode, the semiconductor element and the plurality of metal strips exposing the one end on one main surface. The external electrode protruding outward in the plane direction of the one main surface by means of a strip and a sealing portion which seals a connecting portion between the semiconductor element and the metal strip and which is made of a resin having an insulating property. And the electrode pads of the circuit board on which the semiconductor device is mounted are also arranged in an area substantially equal to the one main surface, and the area occupied on the circuit board of the semiconductor device is approximately the same area as the one main surface. Becomes As a result, it becomes possible to arrange the semiconductor devices on the circuit board as closely as possible without leaving a gap.

In the semiconductor device according to the second aspect of the present invention, since at least a part of the metal strip is bent in a stepwise manner, an external force is applied to the metal strip at or before the semiconductor device is sealed. Even if a force is applied, the bent portion absorbs an external force, and the trouble such as bending of the metal strip is eliminated. Moreover, even if an external force is applied to the metal strip after sealing, the metal strip is unlikely to come out of the sealing portion.

According to a third aspect of the present invention, in a semiconductor device, a plurality of metal strips are provided, one end of which is a plurality of long strips arranged in a peripheral portion on the one main surface, and one end of which is the peripheral portion. The number of external electrode leads on the one main surface is increased by being arranged on the one main surface inside the portion and composed of a plurality of short strips shorter than the long strip.

In the semiconductor device according to the invention of claim 4, the tip portion of the one end portion is bent in the surface direction of the one main surface, and the outer surface of the bent tip portion is used as an external electrode. , The contact surface of the external electrode becomes large. Further, the area and shape of the contact surface can be arbitrarily set by changing the bending position of the tip portion.

Further, in the semiconductor device according to the invention of claim 5, a plurality of metal strips having projections to be external electrodes at predetermined positions, and at least a part of the projections are exposed or projected on one main surface. As described above, the semiconductor element, the plurality of metal strips, and the sealing portion that seals the connection portion between the semiconductor element and the metal strip and is made of a resin having an insulating property,
The external electrode does not project outward in the plane direction of the one main surface, and therefore, the area occupied by the semiconductor device on the circuit board becomes substantially the same as the one main surface, and the semiconductor device is placed on the circuit board. It is possible to arrange them as close as possible to each other without any gap.

According to a sixth aspect of the present invention, in a semiconductor device, a plurality of metal strips having bent portions to be external electrodes at predetermined positions, and at least a part of the bent portions are formed on one main surface. The external electrode is formed by the semiconductor element, the plurality of metal strips, and the sealing portion made of a resin having an insulating property for sealing the connection portion between the semiconductor element and the metal strip so as to be exposed or projected. Does not project outward in the plane direction of the one main surface, and therefore, the area occupied on the circuit board of the semiconductor device is substantially the same as that of the one main surface, and the semiconductor device can be placed on the circuit board without any gap. It is possible to arrange them as densely as possible.

Further, in the semiconductor device according to the invention of claim 7, the surface of the external electrode is recessed with respect to the one main surface, so that the tip portion of the contact terminal used when measuring the electrical characteristics. Keeps contact with the surface of the external electrode. Therefore, there is no possibility that the tip portion will come off from the external electrode.

Further, in the semiconductor device according to the invention of claim 8, a metal layer which has good wettability with the adhesive material and is fixed to the adhesive material is formed around the external electrode. Is fixed to the fixing pad provided around the electrode pad on the circuit board via the adhesive material to fix the semiconductor device on the circuit board. In this case, the metal layer bears a considerable part of the mechanical strength required for fixing, and therefore the area of the external electrode can be reduced to the minimum area required for electrical connection.

According to a ninth aspect of the present invention, the semiconductor device has good wettability with respect to an adhesive material and is fixed to the adhesive material in a region portion on the one main surface where the external electrode is not provided. By forming the metal layer, the metal layer is fixed to the fixing pad provided on the circuit board via the adhesive material to fix the semiconductor device on the circuit board. Since the metal layer bears a considerable part of the mechanical strength required for fixing, the area of the external electrode can be reduced to the minimum area required for electrical connection.

Further, in the semiconductor device according to the invention of a tenth aspect, the adhesive material is one of paste-like solder and sheet-like solder, and is fixed to the metal layer through the solder. The semiconductor device is fixed on the circuit board by fixing it to the pad.

According to the eleventh aspect of the present invention, in the method of manufacturing a semiconductor device, the metal strip is arranged such that one main surface of the metal strip is exposed at one main surface of the sealing surface. A sealing step of sealing a plurality of metal strips and a connecting portion between the semiconductor element and the metal strips with an insulating resin, and a resin obtained by sealing a part of the exposed portion of the metal strips. The exposed part of the metal strip is bent on one main surface of the sealing part by a bending process of bending the metal strip in a direction away from the surface and a cutting process of cutting the bent metal strip to a predetermined length. Since the external electrodes are formed, the interval between the external electrodes can be set arbitrarily.

According to a twelfth aspect of the present invention, in the method of manufacturing a semiconductor device, the metal strip is arranged so that at least a part of the protrusion is exposed or protruded from one main surface of the sealing surface, and the semiconductor element is provided. A sealing step of sealing a plurality of metal strips and a connecting portion between the semiconductor element and the metal strip with a resin having an insulating property, and a portion extending outward from a sealing surface of the metal strips. By the cutting step of cutting along the stop surface, the exposed or projected external electrodes are formed on one main surface of the sealing portion, so that the interval between the external electrodes can be set arbitrarily.

According to a thirteenth aspect of the present invention, in the method for manufacturing a semiconductor device, the metal strip is arranged such that at least a part of the bent portion is exposed or protrudes from one main surface of the sealing surface, A sealing step of sealing a semiconductor element, a plurality of metal strips and a connecting portion between the semiconductor element and the metal strips with an insulating resin; and a portion extending outward from a sealing surface of the metal strip. By the cutting step of cutting along the sealing surface,
Since the exposed or protruding external electrodes are formed on one main surface of the sealing portion, it is possible to arbitrarily set the interval between the external electrodes.

According to a fourteenth aspect of the present invention, in the method of manufacturing a semiconductor device, a first die is formed on one surface thereof with a first recess having a depth shallower than the height of either the protrusion or the bent portion. Using a sealing mold having a main body and a second mold main body in which a second recess for accommodating the semiconductor element is formed at a position facing one surface of the first recess, the second recess is used. The semiconductor element is housed in the first mold body, and the metal strip is held between one surface of the first mold body and one surface of the second mold body so that the upper end of either the protrusion or the bent portion is held. The exposed external electrode is formed on one main surface of the sealing portion by press-contacting the bottom surface of the first recess and injecting the resin into the region surrounded by the first and second recesses. It becomes possible to arbitrarily set the interval between the external electrodes.

According to a fifteenth aspect of the present invention, in the method of manufacturing a semiconductor device, a first concave portion having a depth shallower than the height of either the protrusion or the bent portion is formed on one surface, and the first concave portion is formed. An accommodating portion for accommodating the upper end of the protrusion or the bent portion is formed at a position corresponding to the upper end of the protrusion or the bent portion on the bottom surface of And a second mold body in which a second recess is formed in a position facing the first recess on one surface, and a second recess for accommodating the semiconductor element is formed in the sealing mold. And the semiconductor element is housed in the second recess, and the metal strip is held between the one surface of the first mold body and the one surface of the second mold body to form the protrusion or the bent portion. The upper end of one of the
By injecting the resin into a region surrounded by the second concave portion and a protruding external electrode is formed on one main surface of the sealing portion, the interval between the protruding portions of the external electrode is arbitrarily set. It will be possible.

Further, in the semiconductor device mounting structure according to the sixteenth aspect of the present invention, the adhesive material is fixed to the metal layer and the fixing pad 12 in a state of being spread over the entire surfaces of the metal layer and the fixing pad 12, and the height of the adhesive material is the outside. Since the height is lower than the height of the electrode, the metal layer and the fixing pad are firmly fixed to each other with a thin adhesive layer, and there is no possibility of contact with the surrounding electrode pads, so that the reliability is improved.

According to a seventeenth aspect of the present invention, in the method for mounting a semiconductor device, the area of the semiconductor device is smaller than the area of the fixing pad and the height of the semiconductor device is higher than the height of the external electrode. And an attaching step of attaching an adhesive material having good wettability and fixing to the metal layer, and a semiconductor device of the semiconductor device so that the metal layer is located on the adhesive material and the external electrode is located on the electrode pad. A mounting step of aligning and mounting the semiconductor device on a circuit board, spreading the adhesive material over the entire surface of each of the metal layer and the fixing pad, and applying the adhesive material to the fixing pad through the adhesive material. The metal layer is fixed through the adhesive material without patterning the adhesive material into a fine shape by the connecting step of connecting the external electrode to the electrode pad. And the fixed pad and is firmly fixed,
Moreover, there is no possibility of contact with the surrounding electrode pads. Further, when the adhesive material is spread over the entire surface of the metal layer and the fixing pad, the surface tension of the adhesive material corrects the positional deviation between the external electrode of the semiconductor device and the electrode pad of the circuit board.

[0049]

【Example】

Example 1. An embodiment of the present invention will be described below with reference to the drawings. 1 is a perspective view showing a semiconductor device according to an embodiment of the present invention, and FIG. 2 is a sectional view taken along the line CC. In the figure, reference numeral 51 is an external electrode lead (metal strip) projecting from one main surface (lower surface) 2 of the semiconductor device body. A printed circuit wiring board (circuit board) 11 is provided on the external electrode lead 51.
A surface coating made of an adhesive material 13 such as solder is applied to the surface of the upper electrode pad 12 so that it can be easily fixed to the upper electrode pad 12. The external electrode lead 51 is the sealing portion 1 of the semiconductor device.
It extends inside, and its tip portion 52 is electrically connected to the electrode (not shown) formed on the surface of the semiconductor element 8 by the thin metal wire 9.

According to the semiconductor device of this embodiment, since the external electrode lead 51 is on the one main surface 2 of the semiconductor device and is inside the outer periphery of the main body, the semiconductor device is mounted on the printed circuit wiring board 11. External electrode lead 5 when mounted on
The electrode pads 12 on the printed circuit wiring board 11 to which 1 is connected can be arranged in the area occupied by the semiconductor device body.
Further, unlike the conventional example, since the area of the external electrode lead projecting outward from the semiconductor device side surface 4 is not required, there is an advantage that the semiconductor devices can be densely arranged without a gap.

In the present embodiment, the semiconductor element 8 and the tip portion 52 connected to the external electrode lead 51 are connected by the thin metal wire 9, but it is not always necessary to connect by the thin metal wire 9. For example, both may be directly soldered or gold. The connection by tin eutectic bonding does not hinder the effects of the present invention. Further, it goes without saying that there is no restriction on the shape of the portion extending from the external electrode lead 51 into the sealing portion 1 of the semiconductor device. Furthermore, it goes without saying that there is no restriction on the shape of the sealing portion 1 that has been transfer-molded. Further, it goes without saying that there is no limitation on the constituent material of the external electrode lead 51 and the sealing resin material.

Example 2. FIG. 3 is a sectional view showing a semiconductor device according to another embodiment of the present invention. In the figure, reference numeral 61 is an external electrode lead in which a part of the metal strip extending into the sealing portion 1 is bent stepwise to form a step portion 62. The surface of the external electrode lead 61 is also coated with an adhesive material such as solder.

According to this semiconductor device, in addition to having all the advantages of the semiconductor device shown in the first embodiment, the portion 62 extending from the external electrode lead 61 to the inside of the body is bent in a stepwise manner, so Even if an external force is applied to the electrode lead 61, it has an effect of preventing the portion 62 extending inside the main body from coming off from the sealing portion 1.

It is needless to say that the present embodiment is not limited to the shape, the material and the like as in the first embodiment. Furthermore,
It goes without saying that there is no limitation on the bent shape of the portion 62 of the external electrode lead 61 that extends inside the main body, or the number of steps in a staircase shape.

Example 3. FIG. 4 is a perspective view showing a semiconductor device of another embodiment of the present invention, and FIG. 5 is a sectional view taken along the line D-D thereof, in which 71 is one main surface (lower surface) 2 of the sealing portion 1. Outer electrode leads arranged along the upper perimeter,
Reference numeral 72 is an inner electrode lead arranged inside the peripheral portion on the same principal surface 2, 73 is a tip portion 52 of a long strip extending from the outer electrode lead 71 into the sealing portion 1, and the metal fine wire 9 is used to form a semiconductor. It is electrically connected to the electrode (not shown) of the element 8. Reference numeral 74 denotes a tip end portion 52 of a short strip extending from the inner electrode lead 72 into the sealing portion 1, and is also electrically connected to the electrode of the semiconductor element 8. The outer electrode leads 71, 71, ... And the inner electrode leads 72, 7
Each surface of 2, ... Is also surface-coated with solder or the like. Here, since the both outer inner electrode leads 71, 72 are arranged substantially side by side, the outer electrode lead 71 extends to the tip portion 73 inside the main body through the stepped portion 75 longer than the inner electrode lead 72. ing.

Also in this semiconductor device, in addition to having all the advantages of the semiconductor device shown in the first embodiment, the outer inner electrode leads 71, 72 are arranged in a plurality of rows, so that the outer inner electrode leads 71, 72 are This has the advantage that the number of arrangements can be increased. In addition, also in this embodiment, as in the first embodiment,
It goes without saying that there are no restrictions on the materials, etc. Furthermore, it goes without saying that the number of rows of the outer inner electrode leads 71, 72 is not limited.

Example 4. FIG. 6 is a perspective view showing a semiconductor device according to another embodiment of the present invention, and FIG. 7 is a sectional view taken along the line EE thereof. In FIG. 6, 81 is an external electrode lead 51.
Is the outer electrode bent along the surface direction of the one main surface 2.

According to this semiconductor device, since the tip end portion of the external electrode lead 51 is bent so as not to be perpendicular to the main surface (lower surface) 2 of the main body, the external electrode 81 is mounted on the printed circuit wiring board. In doing so, there is an advantage that the contact surface of the external electrode 81 that contacts the electrode pad on the printed circuit wiring board can be made large. Further, there is an advantage that the size and shape of the contact surface can be freely set. It is needless to say that the present embodiment is not limited to the shape, the material, etc. as in the first embodiment. Furthermore, it goes without saying that the number of rows of the external electrode leads 51 is not limited.

Example 5. FIG. 8 is a process chart showing an embodiment of a method for manufacturing a semiconductor device of the present invention. FIG. 3A shows a process in which a tip portion 91 a of a lead frame (metal strip) 91 and a surface electrode (not shown) of the semiconductor element 8 are electrically connected by a metal wire 9. FIG. 3B shows a step of sealing the semiconductor element 8 with an insulating sealing resin 92 by transfer molding. In the figure, the semiconductor element 8 electrically connected to the lead frame 91 and the periphery of the tip portion 91a of the lead frame 91 to which the thin metal wire 9 is connected are also sealed with a sealing resin 92 such as an epoxy resin. Sealing part 1
Is formed. At this time, the surface 91 of the lead frame 91
b is arranged so as to coincide with the sealing portion 1 and the one main surface 2 of the semiconductor device body. FIG. 3C shows a step of bending the lead frame after resin sealing. In the figure, the lead frame 9
Reference numeral 1 is bent perpendicularly to the main surface 1 of the main body, leaving a tip portion 91a embedded during resin sealing. Reference numeral 93 is a groove of the trace of the lead frame left on the resin surface after bending the lead frame 91. Next, although not shown, the surface of the lead frame 91 is coated with a low melting point metal layer such as solder, and then the lead frame 91 is cut while slightly protruding from the lower surface of the main body of the lead frame 91 to form external electrode leads. .

According to this method of manufacturing a semiconductor device, the sealing mold for transfer molding has a surface that forms one main surface 2 of the main body, and is provided around the portion where the main surface 2 is formed. An upper die having a portion in contact with the surface 91b of the lead frame 91 and a recess for covering the periphery of the semiconductor element 8 are provided, and a portion in contact with another surface with respect to the surface 91b of the lead frame 91 is provided around the recess. By having the lower mold having the semiconductor element 8 between the upper mold and the lower mold.
By sandwiching the lead frame 9 connected to each other and injecting the resin 92 in this state, it is possible to easily manufacture a semiconductor device in which the external electrode lead projects from the one main surface 2 of the semiconductor device main body. Further, in forming the external electrode lead 61 portion, the portion where the lead frame 91 is bent from the main surface 2 of the main body can be freely set, and the interval between the external electrode leads 61 can be arbitrarily set.

In this embodiment, the lead frame 91 and the semiconductor element 8 are electrically connected by the fine metal wire 9, but even if a part of the lead frame 91 is mechanically fixed to a part of the semiconductor element 8. There is no problem.
Further, even if they are electrically connected without using the fine metal wires 9, the present invention is not limited at all. Further, it goes without saying that there are no restrictions on the shape and dimensions of the other parts of the mold, the material of the lead frame and the sealing resin, and the like.

Example 6. FIG. 9 is a process diagram showing another method of manufacturing a semiconductor device according to an embodiment of the present invention. FIG. 9 (a)
Shows a step of electrically connecting the tip portion 91a of the lead frame 91 and the surface electrode of the semiconductor element 8 with the thin metal wire 9.
In the figure, a lead frame 91 is formed with a bent portion (folded portion) 94 following a tip portion 91a for joining the thin metal wire 9. The inflection portion 94 has a shape having a substantially U-shaped convex portion in a direction away from the surface of the semiconductor element 8. Figure 9
(B) shows a step of sealing the semiconductor element with a transfer mold resin. In the figure, the semiconductor element 8 electrically connected to the lead frame 91 and the lead frame 91
The periphery of the tip portion 91a to which the thin metal wire 9 is connected is also sealed with the sealing resin 92 such as an epoxy resin to form the sealing portion 1 of the semiconductor device. At this time, the surface 95 of the inflection portion 94 of the lead frame 91 is arranged so as to coincide with the one main surface 2 which is the surface of the semiconductor device body. FIG. 9C shows a step of cutting the lead frame protruding from the side surface of the sealing resin. In the figure, reference numeral 96 denotes a surface obtained by cutting the lead frame 91 along the side surface 4 of the semiconductor device body. Next, although not shown, the surface 95 of the bent portion 94 of the lead frame is coated with a low melting point metal layer such as solder to form external electrode leads.

According to this method of manufacturing a semiconductor device, the main mold 2 of the main body is formed in the sealing die for transfer molding, and the surface 95 of the inflection portion 94 of the lead frame 91 and the main body 2 are formed. It has a recess of the same depth as the main surface 2,
An upper die having a portion in contact with the surface 91b of the lead frame 91 in the periphery of the recessed portion and a recess for covering the periphery of the semiconductor element 8 are provided, and another die for the surface 91b of the lead frame 91 is provided in the periphery of the recessed portion. By forming the lower mold having the portion in contact with the surface, the lead frame 91 connected to the semiconductor element 8 is sandwiched between the upper mold and the lower mold,
After injecting the resin 92 in that state, the lead frame 91 protruding from the side surface 4 of the main body is cut along the side surface 4 to form a semiconductor in which external electrode leads are formed on the one main surface 2 of the semiconductor device main body. The device can be easily manufactured.

Further, as described above, the depression shape of the upper die of the mold forms one main surface 2 of the main body, and the surface 95 of the inflection portion 94 of the lead frame 91 and the main surface 2 of the main body coincide with each other. By forming a further recess so that a part of the inflection portion 94 is accommodated in the bottom surface of the recess instead of forming a recess having a depth of It is also possible to form an external electrode lead in which a part of the inflection portion 94 projects from 2.

Also in this embodiment, as in the fifth embodiment,
Of course, there are no restrictions. Further, the shape of the inflection portion 94 formed on the lead frame 91 is not restricted at all, and at the same time, there is no need to machine the lead frame, and other projections corresponding to the inflection portion are formed. It is also possible to fix pieces of material.

Example 7. FIG. 10 is a diagram showing a resin sealing step in the method of manufacturing a semiconductor device according to the embodiment of the present invention. FIG. 10A shows a process of electrically connecting the front end portion 91 a of the lead frame 91 having the inflection portion 94 and the surface electrode of the semiconductor element 8 with the thin metal wire 9. H in the figure
Indicates the height of the inflection portion 94 of the lead frame 91. Figure 1
Reference numeral 0 (b) is a part (upper mold) of a mold for sealing the semiconductor element 8 by transfer molding. In the figure, 100 is an upper die of the die (first die body), 101 is a recess filled with the molding resin (first recess), and 102 is a portion (one surface) for fixing the lead frame surface. The mold cavity 1
The depth of 01 is d. At this time, FIG. 10 (c), which is designed so that d <h, shows the upper die (first die body) 100 of the die and the other part (lower die of the die, second die). Lead frame 9 in which the semiconductor element 8 is connected to the die body 103
The process which fixed 1 is shown. In the figure, 104 is a recess (second recess) filled with the mold resin, and 105 is a portion (one surface) for fixing the surface of the lead frame. In this state,
Due to the difference between the height h of the bent portion 94 and the depth d of the recess 101 of the mold, the surface 95 of the bent portion 94 of the lead frame 91 is pressed against the wall surface of the recess 101 of the upper mold 100 of the mold. . In this state, the sealing resin 92 is injected into the recess of the mold by transfer molding, and the periphery of the thin metal wire bonding portion 106 of the semiconductor element 8 and the lead frame 91 is covered with the sealing resin 92.

According to this method of manufacturing a semiconductor device, when the lead frame 91 to which the semiconductor element 8 is connected is bonded to the upper and lower two-side sealing dies during transfer molding, the lead frame 91 is changed. Height h of curved portion 94
However, since it is smaller than the depth d of the depression of the upper die of the die, the surface 95 of the inflection portion 94 touches the surface of the depression 101 of the die and tries to push back the lead frame by (h−d). . The reaction force of the lead frame at this time causes the surface 95 of the inflection portion 94.
Is strongly pressed against the surface of the mold, and even if the sealing resin 92 is injected, the sealing resin 92 does not enter between the surface of the inflection part and the surface of the mold, and the external electrode can be molded nicely.

Of course, in the present embodiment, as in the case of the sixth embodiment, no limitation is imposed. Further, the depression 101 of the mold 100 is not flat, and the depression 1
On the surface of 01, at a position corresponding to the projection of the lead frame 91 or the tip of the bent portion of the projection, the tip is sealed at a predetermined height above one main surface of the semiconductor device. By providing a further depression having a depth capable of being exposed like a protrusion, the protrusion of the lead frame 91,
Alternatively, a part of the projection-shaped bent portion projects onto the one main surface 2 of the semiconductor device, so that a projection-shaped external electrode lead can be formed.

Example 8. FIG. 11 is a side view showing a test state of the semiconductor device according to the embodiment of the present invention for facilitating the test. In the figure, the external electrode 110 of the semiconductor device is formed so as not to protrude from the one main surface 2 of the semiconductor device body but to be recessed from the surface. Therefore, the contact terminal 1
Even if the tip 112 of 11 slides laterally on the external electrode 110, it does not come off the surface 114 of the external electrode by hitting the side wall 113 of the depression.

According to this semiconductor device, the contact terminal 11
Since 1 is laterally displaced and does not come off from the external electrode 110, it becomes easy to adjust the contact pressure when the contact terminal 111 is brought into contact with the external electrode 110 during the test, and the effect of improving the test productivity can be obtained. Further, the recessed shape of the external electrode lead portion is inclined at its side surface, and the entrance portion of the recessed portion is connected to the external electrode 1
If the size is larger than 10, the contact terminal 111 can be easily aligned. The shape of the depression, the dimensions,
There is no restriction on the depth.

Example 9. FIG. 12 is a side sectional view showing an embodiment of the present invention in which a semiconductor device having external electrodes formed on one main surface of a main body is mounted on a printed circuit wiring board, and FIG. 13 is an external electrode of the semiconductor device printed circuit wiring board. FIG. 6 is an enlarged cross-sectional view showing a state in which the electrode pad is connected to the electrode pad of FIG. In the figure, around the external electrode lead 51 formed on the main surface 2 of the semiconductor device main body, the semiconductor device is attached to an electrode pad 12 formed on the surface of a printed circuit wiring board 11 by an adhesive material 13 such as solder.
A metal layer 121 that is wettable by the adhesive material 13 and can be mechanically fixed is formed around the external electrode lead 51 so that the dimensions of the upper and lower portions of the joint are approximately the same when electrically and mechanically joined. Has been done.

According to this embodiment, the main surface 2 of the semiconductor device is
The area of the bonding area of the external electrode due to the adhesive material becomes substantially equal to the area of the electrode pad 12 on the surface of the printed circuit wiring board 11, and the thermal strain generated between the semiconductor device and the printed circuit wiring board is due to the adhesive material 13 at the bonding portion. It has an advantage that it is uniformly generated in the part and crack generation is suppressed. Further, by increasing the area of the metal layer 121 in the peripheral portion, the size of the external electrode lead 51 is only required to be an electrically necessary size, and the size can be made extremely small. It also has effects such as facilitating lead bending in the manufacturing process shown.

In this embodiment, the method of forming the metal 121, the material composition, the shape, etc. are not limited. Further, there is no restriction on the distance between the external electrode lead 51 and the metal layer 121, or the mutual shape. Furthermore, it goes without saying that there is no limitation on the amount or material of the adhesive material 13.

Example 10. FIG. 14 is a side view showing a manufacturing method of one embodiment according to the present invention for mounting a semiconductor device having external electrodes formed on one main surface of a main body on a printed circuit wiring board. FIG. 14A shows a state before the semiconductor device is mounted on the printed circuit wiring board. An external electrode 20 having a height ho is formed on one main surface 2 of the semiconductor device by being coated with a sufficient amount of solder for connecting to a printed circuit wiring board. 131 is formed on the lower surface of the semiconductor device body,
The metal layer is made of a metal having a property of being easily wetted by an adhesive material such as solder, is patterned to have an area of Bo, and is a metal layer for mechanically fixing the semiconductor device to the printed circuit wiring board 11. Electrode pads 12 for connecting electrodes of the semiconductor device and a fixing metal layer 131 formed on the lower surface of the semiconductor device are formed on the surface of the printed circuit wiring board 11 so as to have an area of Ao. A patterned fixing pad 132 is formed. 133
Is an adhesive material such as a cream-like solder paste formed on the fixing pad 132 on the surface of the printed circuit wiring board by screen printing or fixed amount dropping with an area A and a height h. Here, the respective dimensions of A, Ao, Bo, ho, h are Ao> A or Bo> A, ho <h, and
The height when the adhesive material 133 such as the solder paste is melted or softened and wets and spreads on the surfaces of the fixing metal layer 131 and the fixing pad 132 is set to be smaller than ho.

FIG. 14B shows a state in which the semiconductor device is aligned with the printed circuit wiring board 11 and both are held by the adhesive material 133 such as the solder paste. In this state, the adhesive material 133 such as the solder paste contacts the fixing metal layer 131 of the semiconductor device, and the semiconductor device is held by the adhesive force of the adhesive material 133. It is not in contact with the electrode pads 12 on the surface of the printed circuit wiring board 11, or is simply in contact therewith. FIG. 14C shows a state in which the external electrodes 20 of the semiconductor device and the electrode pads 12 of the printed circuit wiring board 11 are electrically connected. By heating the semiconductor device while holding it, the adhesive material 133 and the external electrode 2 that hold the semiconductor device on the printed circuit wiring board 11 are held.
The solder that covers the surface of No. 0 melts, and the former wets and spreads over the entire surface of the fixing metal layer 131 and the fixing pad 132 formed on the surface of the semiconductor device and the surface of the printed circuit wiring board.
As a result, the height of the adhesive material 133 becomes lower than the initial height h, and the molten solder coating the external electrode surface wets and spreads on the electrode pads 12 on the printed circuit wiring board. In this state, cooling to room temperature and fixing the solder completes the electrical and mechanical connection of the semiconductor device to the printed circuit wiring board 11.

According to this embodiment, unlike the conventional method, it is not necessary to drop the flux to hold the semiconductor device, and the step of removing the extra flux is simplified. Further, it is not necessary to pattern the adhesive material into a fine shape, and it is possible to prevent the occurrence of defects such as a short circuit between the electrode pads 12, 12. Further, when the adhesive material 133 such as a solder paste is melted in the heating step, the surface tension of the adhesive material 133 can correct the misalignment between the external electrode 20 of the semiconductor device and the electrode pad 12 on the printed circuit wiring board 11. To be Further, even if the height ho of the external electrode 20 varies, the adhesive material 133 for adhesion is fixed to the metal layer 131 for adhesion.
Also, when the distance between the fixing metal layer 131 and the pad 132 is reduced by being spread over the surface of the fixing pad 132 and becomes smaller than the height ho of the external electrode 20, variations in height of ho are absorbed and all external electrodes are removed. Printed circuit wiring board 11
The effect of bringing the upper electrode pad 12 into contact and adhering the two is also obtained.

In this embodiment, the external electrode 20 of the semiconductor device is coated with a sufficient amount of solder necessary for bonding, but even if the surface of the electrode pad 12 on the printed circuit wiring board is coated with solder, the The effect of the invention is not impaired at all. Further, a method for forming the fixing metal layer 131 on the semiconductor device, and the fixing pad 13 on the printed circuit wiring board 11.
It goes without saying that there are no restrictions on the forming method and the material composition of the second item. Further, the fixing adhesive material 133 may be a material other than solder as long as it has similar properties such as adhesiveness instead of solder and wettability to a fixing pad under heating. It goes without saying that there is no restriction on the method of heat-bonding the external electrode 20 and the electrode pad 12.

[0078]

As described above, according to the invention of claim 1, a semiconductor element having an electronic circuit formed therein and a plurality of metals electrically connected to the semiconductor element and having one end serving as an external electrode. A strip, so that the one end is exposed on one main surface,
Since the semiconductor element, the plurality of metal strips and the connecting portion between the semiconductor element and the metal strip are sealed, and the sealing portion is made of a resin having an insulating property, the semiconductor device is provided on the circuit board. The area occupied by the semiconductor device can be made substantially the same as that of the one main surface, and the semiconductor devices can be arranged on the circuit board as closely as possible without a gap.

Further, according to the invention of claim 2, since at least a part of the metal strip is bent in a stepwise manner, an external force is applied to the metal strip at the time of sealing or before. It is possible to prevent problems such as bending of the metal strips when the metal strips are applied, and prevent the metal strips from coming out of the sealing portion when an external force is applied to the metal strips after sealing. There is an effect that can be.

According to the invention of claim 3, a plurality of the metal strips are provided, one end of which is a plurality of long strips disposed in the peripheral portion of the one main surface, and one end of which is the strip. Since it is arranged on the one main surface inside the peripheral portion and composed of a plurality of short strips shorter than the long strip, it is possible to increase the number of external electrodes on the one main surface. is there.

According to the invention of claim 4, the tip portion of the one end portion is bent in the surface direction of the one main surface, and the outer surface of the tip portion serves as an external electrode. The contact surface of the external electrode can be enlarged. Further, since the bending position of the tip portion can be changed, there is an effect that the area and shape of the contact surface can be set arbitrarily.

According to the invention of claim 5, it has a semiconductor element on which an electronic circuit is formed, and a projection electrically connected to the semiconductor element and serving as an external electrode at a predetermined position from the connection portion. The plurality of metal strips and the semiconductor element, the plurality of metal strips, and the connecting portion between the semiconductor strips and the metal strips are sealed so that at least a part of the protrusion is exposed or projected on one main surface. Since the external electrode does not project outward in the surface direction of the one main surface, it occupies the circuit board of the semiconductor device. There is an effect that the semiconductor device can be arranged on the circuit board as closely as possible without any space, and the area is almost the same as the one main surface.

According to the invention of claim 6, a semiconductor element on which an electronic circuit is formed and a bent portion which is electrically connected to the semiconductor element and serves as an external electrode at a predetermined position from the connection portion. A plurality of metal strips having, and at least a part of the bent portion is exposed or projected on one main surface,
Since the semiconductor element, the plurality of metal strips, and the sealing portion that seals the connecting portion between the semiconductor element and the metal strip and is made of a resin having an insulating property, the external electrode has one main surface. Of the semiconductor device, the area occupied on the circuit board of the semiconductor device can be made substantially the same as that of the one main surface, and the semiconductor device can be formed on the circuit board without any gap. The effect is that they can be arranged as close to each other as possible.

Further, according to the invention of claim 7, since the surface of the external electrode is configured to be recessed with respect to the one main surface, the contact terminal used when measuring the electrical characteristics is There is an effect that the tip portion can be satisfactorily held in contact with the surface of the external electrode, and therefore the tip portion is not likely to come off from the external electrode.

Further, according to the invention of claim 8, since the metal layer which has good wettability to the adhesive material and is fixed to the adhesive material is formed around the external electrode, the semiconductor layer is formed. The device can be firmly fixed on the circuit board, and the area of the external electrode can be reduced to the minimum area required for electrical connection.

Further, according to the invention of claim 9, a metal which has good wettability with respect to an adhesive material and which is fixed to the adhesive material is provided on a region portion on the one main surface where the external electrode is not provided. Since the layers are formed, the semiconductor device can be firmly fixed on the circuit board, and the area of the external electrode can be reduced to the minimum area required for electrical connection.

According to the tenth aspect of the present invention, since the adhesive material is composed of either one of paste solder or sheet solder, the semiconductor device can be firmly fixed on the circuit board. There is an effect that can be.

According to the invention of claim 11, the metal strips are arranged such that one main surface of the metal strips is exposed to one main surface of the sealing surface, and the semiconductor element and the plurality of metals are arranged. A sealing step of sealing the strip and the connection between the semiconductor element and the metal strip with a resin having an insulating property, and separating a part of the exposed portion of the metal strip from the surface of the sealed resin. Since it is composed of a bending step of bending in the direction of the bending and a cutting step of cutting the bent metal strip to a predetermined length, the exposed portion of the metal strip is bent on one main surface of the sealing portion. The external electrode leads described above can be formed, and the interval between the external electrode leads can be set arbitrarily.

According to the twelfth aspect of the invention, the metal strip is arranged such that at least a part of the protrusion provided on the metal strip is exposed or projected from one main surface of the sealing surface, A sealing step of sealing the semiconductor element, a plurality of metal strips and a connecting portion between the semiconductor element and the metal strip with an insulating resin, and a portion extending outward from the sealing surface of the metal strip. And the cutting step of cutting along the sealing surface, it is possible to form, on one main surface of the sealing portion, external electrodes that are exposed or protrude on the surface, and the distance between the external electrodes is increased. There is an effect that it can be set arbitrarily.

According to a thirteenth aspect of the invention, the metal strip is arranged such that at least a part of the bent portion is exposed or projected from one main surface of the sealing surface, and the semiconductor element,
A sealing step of sealing a plurality of metal strips and a connecting portion between the semiconductor element and the metal strips with a resin having an insulating property, and sealing a portion extending outward from a sealing surface of the metal strips. Since it is configured by the cutting step of cutting along the surface, the external electrodes exposed or protruding from the surface can be formed on one main surface of the sealing portion, and the interval between the external electrodes can be set arbitrarily. There is an effect that can be.

According to the fourteenth aspect of the present invention, in the sealing step, the first concave portion having a depth shallower than the height of either the protrusion or the bent portion is formed on one surface. A sealing mold having a mold main body and a second mold main body in which a second concave portion for accommodating the semiconductor element is formed at a position facing the first concave portion on one surface, The semiconductor element is housed in the concave portion of 2, and the metal strip is held between one surface of the first mold body and one surface of the second mold body, and either the protrusion or the bent portion is held. Since the upper end portion is brought into pressure contact with the bottom surface of the first recess and the resin is injected into the region surrounded by the first and second recesses, the resin is injected onto the one main surface of the sealing portion. It is possible to form external electrodes that are exposed to the outside, and the interval between the external electrodes can be set arbitrarily. There is that effect.

According to a fifteenth aspect of the present invention, in the sealing step, a first concave portion having a depth shallower than the height of either the protrusion or the bent portion is formed on one surface, and the first concave portion is formed. An accommodating portion for accommodating the upper end of the protrusion or the bent portion so that the upper end of the protrusion or the bent portion protrudes from the sealing surface at a position corresponding to the upper end of the protrusion or the bent portion on the bottom surface of the concave portion For sealing, which has a first mold body in which a second concave part for accommodating the semiconductor element is formed at a position facing the first concave part on one surface. The semiconductor element is housed in the second recess using a mold, and the metal strip is held between one surface of the first mold body and one surface of the second mold body to hold the protrusion or the protrusion. The upper end of any one of the bent portions is housed in the housing, and the first and second recesses are used to store the bent parts. Since the resin is injected into the enclosed area, the external electrode protruding from the main surface of the sealing portion can be formed on one main surface of the sealing portion, and the interval between the protruding portions of the external electrode can be arbitrarily set. There is an effect that can be set.

According to the sixteenth aspect of the present invention, the adhesive material is fixed in a state of being spread over the entire surface of each of the metal layer and the fixing pad, and its height is made lower than the height of the external electrode. With this configuration, the metal layer and the fixing pad are firmly fixed to each other via the adhesive material, and there is no possibility of contact with the surrounding electrode pads. Therefore, there is an effect that the reliability of the entire configuration can be improved.

According to the seventeenth aspect of the present invention, the metal is formed on the fixing pad so that the area thereof is smaller than the area of the fixing pad and the height thereof is higher than the height of the external electrode. Adhering step of adhering an adhesive material having good wettability and adhesion to the layer, and aligning the semiconductor device so that the metal layer is located on the adhesive material and the external electrode is located on the electrode pad. A mounting step of mounting the semiconductor device on a circuit board, spreading the adhesive material over the entire surface of each of the metal layer and the fixing pad, and fixing the metal layer to the fixing pad via the adhesive material And the connection step of connecting the external electrode to the electrode pad, it is not necessary to pattern the adhesive material into a fine shape, and the adhesive material does not interfere with the metal layer through the adhesive material. And use the pad can be firmly secured, yet also eliminates risk of contact with the surrounding of the electrode pads. Further, when the adhesive material is spread over the entire surface of each of the metal layer and the fixing pad, the surface tension of the adhesive material can correct the positional deviation between the external electrode lead of the semiconductor device and the electrode pad of the circuit board. is there.

[Brief description of drawings]

FIG. 1 is a perspective view showing a semiconductor device according to an embodiment of the present invention.

FIG. 2 is a cross-sectional view taken along the line CC of FIG.

FIG. 3 is a sectional view of a semiconductor device showing another embodiment of the present invention.

FIG. 4 is a perspective view of a semiconductor device showing another embodiment of the present invention.

5 is a cross-sectional view taken along the line DD of FIG.

FIG. 6 is a perspective view of a semiconductor device showing another embodiment of the present invention.

7 is a cross-sectional view taken along the line EE of FIG.

FIG. 8 is a process chart showing a method for manufacturing a semiconductor device according to an embodiment of the present invention.

FIG. 9 is a process chart of a method of manufacturing a semiconductor device showing another embodiment of the present invention.

FIG. 10 is a process drawing showing a resin-sealing step of a method of manufacturing a semiconductor device showing another embodiment of the present invention.

FIG. 11 is a side view of the semiconductor device in a test state showing another embodiment of the present invention.

FIG. 12 is a side sectional view showing a state in which a semiconductor device according to an embodiment of the present invention is mounted on a printed circuit wiring board.

13 is a partially enlarged cross-sectional view of FIG.

FIG. 14 is a side view showing a method of mounting a semiconductor device on a printed circuit wiring board according to an embodiment of the present invention.

FIG. 15 is a perspective view showing a conventional semiconductor device.

16 is a cross-sectional view taken along the line AA of FIG.

FIG. 17 is a side sectional view showing a state in which a conventional semiconductor device is mounted on a printed circuit wiring board.

FIG. 18 is a perspective view showing another conventional semiconductor device.

19 is a cross-sectional view taken along the line BB of FIG.

FIG. 20 is a side view of a conventional semiconductor device in a test state.

FIG. 21 is a side sectional view showing a state in which a conventional semiconductor device is mounted on a printed circuit wiring board.

22 is a partially enlarged sectional view of FIG.

FIG. 23 is a side sectional view showing a method for mounting a conventional semiconductor device on a printed circuit wiring board.

FIG. 24 is a side sectional view showing another method for mounting a conventional semiconductor device on a printed circuit wiring board.

[Explanation of symbols]

 1 Sealing Part 2 One Main Surface (Lower Surface) 3 Other Main Surface (Upper Surface) 4 Side Surface 8 Semiconductor Element 11 Printed Circuit Wiring Board (Circuit Board) 12 Electrode Pad 13 Adhesive Material 20 External Electrode 51 External Electrode Lead (Metal Strip) ) 52 tip part 61 external electrode lead (metal strip) 62 step part 71 outer electrode lead 72 inner electrode lead 81 external electrode 91 lead frame (metal strip) 91a tip part 92 sealing resin 94 bent part (bent part) ) 95 surface 100 mold upper mold (first mold body) 101 recess (first recess) 102 one side 103 mold lower mold (second mold body) 104 recess (second recess) 105 One surface 110 External electrode 121 Metal layer 131 Metal layer 132 Fixing pad 133 Adhesive material

Claims (17)

[Claims] 1. A semiconductor element on which an electronic circuit is formed, a plurality of metal strips electrically connected to the semiconductor element and having one end serving as an external electrode, and the one end exposed on one main surface. Thus, the semiconductor element, a plurality of metal strips, and a sealing portion that seals a connecting portion between the semiconductor element and the metal strip and is made of a resin having an insulating property are provided. Semiconductor device. 2. A semiconductor device, wherein at least a part of the metal strip is bent stepwise. 3. The plurality of metal strips have a plurality of long strips whose one end is arranged in a peripheral portion on the one main surface, and one end on the one main surface inside the peripheral portion. 3. The semiconductor device according to claim 1, wherein the semiconductor device comprises a plurality of short strips which are arranged in a short length and are shorter than the long strips. 4. The one end according to claim 1, wherein a tip portion of the one end portion is bent in a surface direction of the one main surface, and an outer surface of the tip portion serves as an external electrode. Semiconductor device. 5. A semiconductor element on which an electronic circuit is formed, a plurality of metal strips electrically connected to the semiconductor element, and having projections serving as external electrodes at predetermined positions from the connection portion, and the projections. A resin that seals the semiconductor element, the plurality of metal strips and the connecting portion between the semiconductor element and the metal strip, and has an insulating property so that at least a part thereof is exposed or protrudes on one main surface. A semiconductor device comprising: 6. A semiconductor element on which an electronic circuit is formed, a plurality of metal strips electrically connected to the semiconductor element, and having a bent portion to be an external electrode at a predetermined position from the connection portion, The semiconductor element, the plurality of metal strips, and the connecting portion between the semiconductor element and the metal strip are sealed and insulated so that at least a part of the bent portion is exposed or projected on one main surface. And a sealing portion made of a resin having properties. 7. The semiconductor device according to claim 1, wherein a surface of the external electrode is recessed with respect to the one main surface. 8. The periphery of the external electrode on the one main surface,
8. The semiconductor device according to claim 1, wherein a metal layer having good wettability with respect to the adhesive material and being fixed to the adhesive material is formed. 9. The wettability with respect to an adhesive material is good in a region portion of the one main surface where the external electrode is not provided,
8. The semiconductor device according to claim 1, further comprising a metal layer that is fixed to the adhesive material. 10. The semiconductor device according to claim 8, wherein the adhesive material is one of paste-like solder and sheet-like solder. 11. A connecting step for electrically connecting a semiconductor device having an electronic circuit formed thereon and a plurality of metal strips, and one main surface of the metal strips is exposed on one main surface of a sealing surface. A sealing step of arranging the metal strips, and sealing the semiconductor element, the plurality of metal strips, and the connection portion between the semiconductor element and the metal strips with an insulating resin. A bending step for bending a part of the exposed portion of the strip in a direction away from the surface of the sealed resin; and a cutting step for cutting the folded metal strip to a predetermined length. Of manufacturing a semiconductor device. 12. A semiconductor device having an electronic circuit formed thereon,
A connecting step of electrically connecting each tip of a plurality of metal strips having a projection at a predetermined position from the tip, so that at least a part of the projection is exposed or protrudes from one main surface of the sealing surface. A sealing step of arranging the metal strips on the semiconductor element, a plurality of metal strips, and a connecting portion between the semiconductor element and the metal strips with an insulating resin; And a step of cutting a portion extending outward from the sealing surface along the sealing surface. 13. A semiconductor device having an electronic circuit,
A connecting step of electrically connecting each tip of a plurality of metal strips having a bent portion to be an external electrode at a predetermined position from the tip, and at least a part of the bent portion is a sealing surface. Sealing in which the metal strips are arranged so as to be exposed or projected from the main surface, and the semiconductor element, a plurality of metal strips, and a connection portion between the semiconductor element and the metal strips are sealed with a resin having an insulating property. A method of manufacturing a semiconductor device, comprising: a step; and a cutting step of cutting a portion of the metal strip extending outward from a sealing surface along the sealing surface. 14. The sealing step comprises: a first die main body having a first recess having a depth shallower than the height of either the protrusion or the bent portion formed on one surface; Using a sealing mold having a second mold body in which a second concave part for accommodating the semiconductor element is formed at a position facing the concave part of No. 1, the semiconductor element is accommodated in the second concave part. Then, the metal strip is sandwiched between the one surface of the first mold body and the one surface of the second mold body, and the upper end of either the projection or the bent portion is formed in the first recess. Press it against the bottom,
14. The method of manufacturing a semiconductor device according to claim 12, which is a resin sealing step of injecting the resin into a region surrounded by the first and second recesses. 15. In the sealing step, a first recess having a depth shallower than the height of either the projection or the bent portion is formed on one surface, and the projection or the bottom surface of the first recess is formed. A first mold in which a storage portion for storing the upper end is formed at a position corresponding to an upper end of the bent portion so that the projection or the upper end of the bent portion projects from the sealing surface. A sealing die having a main body and a second die main body having a second concave portion for accommodating the semiconductor element formed at a position facing the first concave portion on one surface is used. The semiconductor element is housed in a recess, and the metal strip is sandwiched between one surface of the first mold body and one surface of the second mold body, and the upper end of either the protrusion or the bent portion is held. Is stored in the storage portion, and the resin is injected into the area surrounded by the first and second recesses. 14. The method of manufacturing a semiconductor device according to claim 12, which is a resin encapsulation step. 16. A semiconductor device having a plurality of external electrodes and a metal layer having good wettability with an adhesive material and fixed to the adhesive material on one main surface, and the external electrodes mounted on the one surface. A circuit board having an electrode pad to be placed and a fixing pad for fixing the metal layer, and the metal layer and the fixing pad are fixed to the metal layer and the fixing pad in a state of being spread over the respective surfaces, and the height thereof is the external electrode. And a bonding material lower than the height of the semiconductor device. 17. A plurality of electrode pads respectively mounting a plurality of external electrodes provided on one main surface of a semiconductor device,
On the fixing pad of a circuit board having a fixing pad for fixing a metal layer provided on the one main surface, the area of the circuit board is smaller than the area of the fixing pad and the height of the external electrode is smaller than the area of the fixing electrode. An attaching step of attaching an adhesive material having good wettability and fixing to the metal layer so as to be higher than the height;
A step of placing the semiconductor device on the circuit board by aligning the semiconductor device such that the metal layer is placed on the adhesive material and the external electrodes are placed on the electrode pads; and A step of spreading the material on the entire surface of each of the metal layer and the fixing pad, fixing the metal layer to the fixing pad via the adhesive material, and connecting the external electrode to the electrode pad. A method for mounting a semiconductor device, comprising: