JP2005303107A - Lead frame, semiconductor device, and manufacturing method of them - Google Patents

Lead frame, semiconductor device, and manufacturing method of them Download PDF

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Publication number
JP2005303107A
JP2005303107A JP2004118641A JP2004118641A JP2005303107A JP 2005303107 A JP2005303107 A JP 2005303107A JP 2004118641 A JP2004118641 A JP 2004118641A JP 2004118641 A JP2004118641 A JP 2004118641A JP 2005303107 A JP2005303107 A JP 2005303107A
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Prior art keywords
lead frame
lead
protrusion
recess
back surface
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Inventor
Takashi Nagate
隆 長手
Kenichi Takeuchi
謙一 武内
Daisuke Harada
大介 原田
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HAMADA TECHNOS KK
New Japan Radio Co Ltd
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HAMADA TECHNOS KK
New Japan Radio Co Ltd
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Priority to JP2004118641A priority Critical patent/JP2005303107A/en
Publication of JP2005303107A publication Critical patent/JP2005303107A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device wherein occurrence of a positional deviation caused by uplift of the semiconductor device from a mount board is prevented, the solderability with the mount board is improved, and visual inspection is facilitated. <P>SOLUTION: The semiconductor device is formed by mounting a semiconductor element 40 on a lead frame 10 on the rear side of which projections 12a, 13a, and recessed parts 12c, 13c are formed by connecting the semiconductor element 40 with a wiring material 50, and by packaging the whole with a sealing resin 60. A first connection insulation material 20 is arranged in gaps of the lead frame 10 caused by demarcating die-islands 11, extensions 12, and leads 13; and a second connection insulation material 30 is arranged to the whole rear side of the lead frame 10 except the projections 12a, 13a and the recesses 12c, 13c. Cut faces of the projections 12a, 13a are almost flush with a cut face of the sealing resin 60 and exposed at a side face. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は、リードフレームおよびそのリードフレームを使用した半導体装置並びにそれらの製造方法に関するものである。   The present invention relates to a lead frame, a semiconductor device using the lead frame, and a manufacturing method thereof.

従来の技術Conventional technology

従来のチップキャリアタイプの小型半導体装置は、外部接続用のリード端子が封止樹脂本体の裏面部から露出する形状であるが、そのリード端子の実装基板との接合面が樹脂本体の裏面と一様な平面、つまり樹脂本体裏面部と同一高さになっている（例えば、特許文献１の図１参照）。
特開平９−０８２７４１号公報 A conventional chip carrier type small semiconductor device has a shape in which a lead terminal for external connection is exposed from the back surface portion of the sealing resin body, and the joint surface of the lead terminal with the mounting substrate is flush with the back surface of the resin body. Such a flat surface, that is, the same height as the resin main body back surface portion (see, for example, FIG. 1 of Patent Document 1).
JP-A-9-082741

このようにリード端子が封止樹脂本体裏面部に平面的に面一で露出し、封止樹脂本体裏面とリード端子の間にスタンドオフ（段差）がないため、ハンダ付け作業時に、溶融したハンダの表面張力によって半導体装置全体が実装基板から浮き上がり、リード端子のハンダ付け位置が実装基板の所定の電極部（パッド）から外れて位置ズレが発生するという問題があった。   In this way, the lead terminal is exposed on the back surface of the sealing resin body in a plane, and there is no standoff (step) between the back surface of the sealing resin body and the lead terminal. Due to the surface tension, the entire semiconductor device is lifted from the mounting substrate, and the soldering position of the lead terminal is disengaged from a predetermined electrode portion (pad) of the mounting substrate, resulting in a positional deviation.

また、ダイアイランド部を実装基板にハンダ付けしてダイアイランド部から実装基板への放熱性を向上させたい場合にも、ダイアイランド部全面をハンダ付けすると、半導体装置全体が実装基板から更に浮き上がり、リード端子やダイアイランド部のハンダ付け位置が所定のパッドから外れて位置ズレが発生するという問題もあった。   Also, if you want to improve the heat dissipation from the die island part to the mounting board by soldering the die island part to the mounting board, if you solder the entire die island part, the whole semiconductor device will rise further from the mounting board, There has also been a problem that the soldering position of the lead terminal or die island part is deviated from a predetermined pad, resulting in positional deviation.

さらに、ハンダ量が均一に各ハンダ接合部に行き渡らず、ハンダ付けにバラツキが生じ易くなり、実装基板との間のハンダ付着が全体的に不均一或いは不十分になり、十分な接合強度が得られないという問題もあった。   Furthermore, the amount of solder does not reach the solder joints uniformly, and soldering is likely to vary, resulting in uneven or insufficient solder adhesion to the mounting board, and sufficient bonding strength is obtained. There was also a problem that it was not possible.

さらに、ハンダ付け後の目視検査において、実装基板表面と半導体装置裏面との間隔が少ないため、ハンダ付け部の良否のチェックがし難いという問題もあった。   Further, in the visual inspection after soldering, there is a problem that it is difficult to check the quality of the soldered portion because the distance between the surface of the mounting substrate and the back surface of the semiconductor device is small.

本発明の目的は、上記課題を解決し、半導体装置の実装時の実装基板に対する位置ズレの防止、実装基板とのハンダ付け性の改善による接合強度の向上、実装後の目視検査のし易さの改善等を図ったリードフレームおよび半導体装置並びにそれらの製造方法を提供することである。   The object of the present invention is to solve the above-mentioned problems, to prevent misalignment with respect to the mounting substrate during mounting of the semiconductor device, to improve the bonding strength by improving the solderability with the mounting substrate, and to facilitate visual inspection after mounting. It is an object to provide a lead frame, a semiconductor device, and a method for manufacturing the same, in which improvement of the above is achieved.

請求項１にかかる発明のリードフレームは、延長部を有するダイアイランド部と、該ダイアイランド部の所定の辺に沿う方向に配列された複数のリード部と、前記延長部および前記各リード部と連続する枠部と、前記延長部、前記ダイアイランド部、前記リード部、および前記枠部を区画する間隙部の一部と、を１単位として複数単位が連続形成されたリードフレームであって、前記各リード部の裏面側に突出するように形成され且つ略中央部にくぼむ第１の凹部を有する第１の突起部と、前記間隙部を埋めると共に前記第１の突起部および前記第１の凹部を除く裏面全面に配設された絶縁材料とを具備し、且つ、前記複数のリード部の前記第１の突起部は、前記複数のリード部の並びの方向と直交する方向が長い長方形に形成されていることを特徴とする。   The lead frame of the invention according to claim 1 is a die island part having an extension part, a plurality of lead parts arranged in a direction along a predetermined side of the die island part, the extension part, and each lead part. A lead frame in which a plurality of units are continuously formed with a continuous frame portion and a part of the extension portion, the die island portion, the lead portion, and a part of a gap partitioning the frame portion as one unit, A first protrusion having a first recess formed so as to protrude from the back side of each lead portion and recessed in a substantially central portion; and filling the gap and the first protrusion and the first protrusion An insulating material disposed on the entire back surface except for the one recess, and the first protrusion of the plurality of lead portions has a long direction orthogonal to the direction in which the plurality of lead portions are arranged. It is formed in a rectangle The features.

請求項２にかかる発明は、請求項１に記載のリードフレームにおいて、前記ダイアイランド部の裏面側に突出するように形成され且つ略中央部にくぼむ第２の凹部を有する第２の突起部を具備し、前記絶縁材料は前記間隙部を埋めると共に前記第１および第２の突起部並びに前記第１および第２の凹部を除く裏面全面に配設されていることを特徴とする。   According to a second aspect of the present invention, in the lead frame according to the first aspect of the present invention, a second protrusion having a second concave portion formed so as to protrude toward the back surface side of the die island portion and recessed substantially in the central portion. And the insulating material fills the gap and is disposed on the entire back surface except for the first and second protrusions and the first and second recesses.

請求項３にかかる発明は、請求項２に記載のリードフレームにおいて、
前記第２の突起部と前記第２凹部とで、前記ダイアイランド部の裏面で連続し又は一部切り欠き部を有するリング枠部が形成されていることを特徴とする。 The invention according to claim 3 is the lead frame according to claim 2,
The second projecting portion and the second concave portion form a ring frame portion that is continuous or partially cut out on the back surface of the die island portion.

請求項４にかかる発明は、請求項２又は３に記載のリードフレームにおいて、前記第１の突起部の高さと前記第２の突起部の高さを略同一とし、前記第２の凹部が実装基板との間でスタンドオフ部の一部を構成するようにしたことを特徴とする。   According to a fourth aspect of the present invention, in the lead frame according to the second or third aspect, the height of the first protrusion and the height of the second protrusion are substantially the same, and the second recess is mounted. A part of the stand-off portion is formed with the substrate.

請求項５にかかる発明は、請求項１乃至４のいずれか１つに記載のリードフレームにおいて、前記リード部における前記第１の突起部の反対面に第３の凹部又は第３の突起部が形成されていることを特徴とする。   According to a fifth aspect of the present invention, in the lead frame according to any one of the first to fourth aspects, the third concave portion or the third convex portion is provided on the opposite surface of the lead portion to the first protruding portion. It is formed.

請求項６にかかる発明の半導体装置は、請求項１乃至５のいずれか１つに記載のリードフレームの１単位と、該１単位のリードフレームの前記ダイアイランド部に搭載された半導体素子と、該半導体素子の電極と前記１単位のリードフレームの前記リード部との間を接続する配線材料と、前記半導体素子および前記配線材料を覆うように前記リードフレームの上面側にモールドされた樹脂とを具備し、前記第１の突起部および前記第１の凹部の切断端面が前記樹脂の切断端面と略同一面となって前記樹脂の側面から露出していることを特徴とする。   A semiconductor device according to a sixth aspect of the present invention is a unit of the lead frame according to any one of the first to fifth aspects, and a semiconductor element mounted on the die island portion of the one unit of the lead frame; A wiring material connecting between the electrode of the semiconductor element and the lead portion of the one unit lead frame; and a resin molded on the upper surface side of the lead frame so as to cover the semiconductor element and the wiring material. And the cut end surfaces of the first protrusion and the first recess are substantially flush with the cut end surface of the resin and are exposed from the side surface of the resin.

請求項７にかかる発明は、請求項６に記載の半導体装置において、前記第１の突起部および前記第１の凹部およびそれらの切断端面の少なくとも一部は、メッキ部によって覆われていることを特徴とする。   According to a seventh aspect of the present invention, in the semiconductor device according to the sixth aspect, the first protrusion, the first recess, and at least a part of the cut end surface thereof are covered with a plating portion. Features.

請求項８にかかる発明のリードフレームの製造方法は、延長部を有するダイアイランド部と、該ダイアイランド部の所定の辺に沿う方向に配列された複数のリード部と、該各リード部の裏面に突出する第１の突起部と、該第１の突起部の略中央部にくぼむ第１の凹部と、前記延長部および前記各リード部と連続する枠部と、前記延長部、前記ダイアイランド部、前記リード部、および前記枠部を区画する間隙部の一部と、を１単位とし複数単位が連続する形状にリードフレームを加工する第１の工程、前記間隙部を埋めるように第１の連結絶縁材料を配設する第２の工程、前記第１の突起部および前記第１の凹部を除く前記リードフレームの裏面全面に第２の連結絶縁材料を配設する第３の工程、の内の第１と第２と第３の工程又は第１と第３の工程を具備することを特徴とする。   The lead frame manufacturing method according to an eighth aspect of the present invention includes a die island portion having an extension portion, a plurality of lead portions arranged in a direction along a predetermined side of the die island portion, and a back surface of each lead portion. A first projection projecting into the first projection, a first recess recessed in a substantially central portion of the first projection, a frame continuous with the extension and each lead, the extension, A first step of processing a lead frame into a shape in which a die island part, the lead part, and a part of a gap part defining the frame part are defined as one unit and a plurality of units are continuous, so as to fill the gap part A second step of disposing a first connection insulating material; a third step of disposing a second connection insulating material on the entire back surface of the lead frame excluding the first protrusion and the first recess; , First and second and third steps or first and second Characterized by comprising the steps.

請求項９にかかる発明は、請求項８に記載のリードフレームの製造方法において、前記ダイアイランド部の裏面側に第２の突起部と該第２の突起部の略中央部にくぼむ第２の凹部を形成する第４の工程を具備し、前記第３の工程を前記第１および第２の突起部ならびに前記第１および第２の凹部を除く前記リードフレームの裏面全面に前記第２の連結絶縁材料を配設する工程に置き換えたことを特徴とする。   According to a ninth aspect of the present invention, in the method for manufacturing a lead frame according to the eighth aspect, the second protrusion is formed on the back surface side of the die island portion, and the second protrusion is recessed at a substantially central portion of the second protrusion. And a second step of forming the second recess on the entire back surface of the lead frame excluding the first and second protrusions and the first and second recesses. The connection insulating material is replaced with the step of disposing the connection insulating material.

請求項１０にかかる発明の半導体装置の製造方法は、請求項８又は９の製造方法にてリードフレームを製造する工程と、前記リードフレームの前記ダイアイランド部に半導体素子を搭載し該半導体素子の電極と前記リード部とを配線材料により接続する工程と、前記リードフレームの前記半導体素子側を樹脂で封止する工程と、前記樹脂および前記リードフレームを前記第１の突起部および前記第１の凹部の切断面が前記樹脂の切断面と略同一面となるようにダイシングにより切断して前記単位毎に分離する工程と、を具備することを特徴とする。   According to a tenth aspect of the present invention, there is provided a method for manufacturing a semiconductor device comprising: a step of manufacturing a lead frame by the manufacturing method of the eighth or ninth aspect; and mounting a semiconductor element on the die island portion of the lead frame. A step of connecting the electrode and the lead portion with a wiring material; a step of sealing the semiconductor element side of the lead frame with a resin; and the resin and the lead frame with the first protrusion and the first A step of cutting by dicing so that the cut surface of the recess is substantially flush with the cut surface of the resin, and separating the unit.

請求項１１にかかる発明は、請求項１０に記載の半導体装置の製造方法において、前記分離する工程を、前記リードフレームの裏面側から少なくとも前記リードフレームまでハーフカットする工程と、前記リードフレームの裏面側を前記リードフレームの切断面も含めてメッキする工程と、前記樹脂の上面側から前記ハーフカット部分までを切断して前記第１の突起部および前記第１の凹部の切断面が前記樹脂の切断面と略同一面となるように前記単位毎に分離する工程に置き換えたことを特徴とする。   According to an eleventh aspect of the present invention, in the method of manufacturing a semiconductor device according to the tenth aspect, the separating step includes a step of half-cutting from the back surface side of the lead frame to at least the lead frame, and a back surface of the lead frame. Plating the side including the cut surface of the lead frame, and cutting from the upper surface side of the resin to the half-cut portion so that the cut surfaces of the first protrusion and the first recess are made of the resin. The present invention is characterized in that it is replaced with a step of separating each unit so as to be substantially flush with the cut surface.

本発明のリードフレームを使用した本発明の半導体装置によれば、リードフレームの第１の突起部（又は第１および第２の突起部）並びに第１の凹部（又は第１および第２の凹部）が半導体装置の裏面から突出し、それら以外の裏面は絶縁材料で覆われるので、ハンダの表面張力による浮き上がりが回避されて実装基板への実装時の位置ズレを防止できる。また、第１の凹部（又は第１および第２の凹部）により実装基板と突起部の接合面積が大きくなってハンダ付け時の接合強度が大きくなることはもとよりスタンドオフ機能が発揮されてハンダ付け性が改善される。さらに第２の突起部により実装基板への放熱性が向上し、特にその第２の突起部を切り欠き部を有するリング枠部のリブの形状にすることによりハンダ付け時のフラックス等を逃がし易くなり、洗浄効果を発揮できる。さらに第１の突起部および第１の凹部の切断面が樹脂の切断面と略同一面として側面に露出するので、ハンダ付け良否の目視検査がし易くなる等の利点がある。なお、スタンドオフ機能とは、半導体装置のリード端子と実装基板の端子部とのハンダ自動位置合わせやハンダ付け性を向上させるために、半導体装置本体部底面（裏面）と実装基板表面間に間隙（スタンドオフ）を設け、ハンダ部加熱溶融による半導体装置のリード端子と実装基板の端子部とのセルフアライン効果の助長や半導体装置本体の浮き上がり防止およびフラックス洗浄液の流路を形成して汚れ防止を助長する機能をいう。   According to the semiconductor device of the present invention using the lead frame of the present invention, the first protrusion (or the first and second protrusions) and the first recess (or the first and second recesses) of the lead frame. ) Protrudes from the back surface of the semiconductor device, and the other back surface is covered with an insulating material, so that lifting due to the surface tension of the solder can be avoided, and misalignment during mounting on the mounting substrate can be prevented. In addition, the first recess (or the first and second recesses) increases the bonding area between the mounting substrate and the protrusion and increases the bonding strength at the time of soldering. Improved. Furthermore, the heat dissipation to the mounting substrate is improved by the second protrusion, and the flux, etc. at the time of soldering can be easily released by making the second protrusion in the shape of a rib of the ring frame portion having a notch. The cleaning effect can be demonstrated. Further, since the cut surfaces of the first protrusion and the first recess are exposed on the side surface as substantially the same as the cut surface of the resin, there is an advantage that it is easy to perform a visual inspection of soldering quality. The standoff function is a gap between the bottom surface (back surface) of the semiconductor device main body and the mounting substrate surface in order to improve automatic solder positioning and solderability between the lead terminal of the semiconductor device and the terminal portion of the mounting substrate. (Standoff) is provided to promote the self-alignment effect between the lead terminal of the semiconductor device and the terminal part of the mounting substrate by heating and melting the solder part, to prevent the semiconductor device body from floating and to prevent contamination by forming a flow path for the flux cleaning liquid A function that promotes.

以下、本発明の実施例について説明する。   Examples of the present invention will be described below.

図１は実施例１の半導体装置を示す図で、(a)は透視正面図、(b)は正面図、(c)は右側面図、(d)は裏面図である。１０は導電性板材にカット、プレス、エッチング等の加工を施して形成したリードフレーム、２０は該リードフレーム１０の間隙部に配設された第１の連結絶縁材料、３０はリードフレーム１０の裏面に配設された第２の連結絶縁材料、４０は所定回路が内部に構成された半導体素子（ＬＳＩチップ）、５０は金線等の配線材料、６０はパッケージのための封止樹脂である。   1A and 1B are diagrams illustrating a semiconductor device according to a first embodiment, in which FIG. 1A is a perspective front view, FIG. 1B is a front view, FIG. 1C is a right side view, and FIG. 10 is a lead frame formed by subjecting a conductive plate material to cutting, pressing, etching and the like, 20 is a first connecting insulating material disposed in a gap portion of the lead frame 10, and 30 is a back surface of the lead frame 10. The second connecting and insulating material disposed in 40, 40 is a semiconductor element (LSI chip) in which a predetermined circuit is configured, 50 is a wiring material such as a gold wire, and 60 is a sealing resin for a package.

リードフレーム１０は、図３の裏面図に詳細に示すように、半導体素子４０を搭載するダイアイランド部１１と、そのダイアイランド部１１に連続する延長部１２と、ダイアイランド部１１の両側の複数のリード部１３と、延長部１２およびリード部１３と連続する枠部１４と、ダイアイランド部１１、延長部１２、リードフレーム部１３、および枠部１４を区画する間隙部１５の一部とを１つの単位Ａとして、複数の単位Ａが縦方向および横方向に連続反復して形成されている。   As shown in detail in the rear view of FIG. 3, the lead frame 10 includes a die island portion 11 on which the semiconductor element 40 is mounted, an extension portion 12 continuous with the die island portion 11, and a plurality of both sides of the die island portion 11. Lead portion 13, extension portion 12 and frame portion 14 that is continuous with lead portion 13, die island portion 11, extension portion 12, lead frame portion 13, and part of gap portion 15 that defines frame portion 14. As one unit A, a plurality of units A are formed by repeated repetition in the vertical direction and the horizontal direction.

そして、延長部１２、リード部１３には、裏面側に突出する長方形の突起部１２ａと突起部１３ａ（第１の突起部）がそれぞれ略同一高さで形成されている。なお、この突起部１３ａに対応するように、表面側には凹部（くぼみ）１３ｂが形成されている。突起部１２ａに対応する凹部１２ｂも図示しないが形成されている。さらに、突起部１２ａにはその略中央部にくぼむ凹部１２ｃが、突起部１３ａにもその略中央部にくぼむ凹部１３ｃ（第１の凹部）が、それぞれ形成されている。このまた、この裏面の突起部１２ａ，１３ａと凹部１２ｃ，１３ｃの表面には後記するメッキ部１７０が形成されているが、図１では省略した。   The extension portion 12 and the lead portion 13 are formed with rectangular protrusions 12a and protrusions 13a (first protrusions) that protrude to the rear surface side at substantially the same height. A concave portion (recess) 13b is formed on the surface side so as to correspond to the protruding portion 13a. A recess 12b corresponding to the protrusion 12a is also formed (not shown). Further, the protrusion 12a is formed with a recess 12c recessed in a substantially central portion thereof, and the protrusion 13a is formed with a recess 13c (first recess) recessed in a substantially central portion thereof. Moreover, although the plating part 170 mentioned later is formed in the surface of this protrusion part 12a, 13a and recessed part 12c, 13c of this back surface, it abbreviate | omitted in FIG.

第１の連結絶縁材料２０は間隙部１５に充填配設されている。また、第２の連結絶縁材料３０はリードフレーム１０の裏面の突起部１２ａ、１３ａおよび凹部１２ｃ，１３ｃの部分を除く全面（間隙部１５も含む）に、その突起部１２ａ，１３ａの高さより低く（薄い厚み）で配設されている。   The first connecting insulating material 20 is filled in the gap 15. Further, the second connection insulating material 30 is lower than the height of the protrusions 12a and 13a on the entire surface (including the gap 15) except for the protrusions 12a and 13a and the recesses 12c and 13c on the back surface of the lead frame 10. (Thin thickness).

以下、半導体装置の製造方法について説明する。まず、リードフレーム１０は導電性の所定厚みの板材を、カット、プレス、エッチング等で加工することにより、前記した図３に示した形状に形成し、その後に第１の連結部材２０、第２の連結部材３０を絶縁材料の塗布、印刷、モールド、貼付等により配設する。   Hereinafter, a method for manufacturing a semiconductor device will be described. First, the lead frame 10 is formed into the shape shown in FIG. 3 by processing a conductive plate material having a predetermined thickness by cutting, pressing, etching, or the like, and then the first connecting member 20 and the second connecting member 20 are formed. The connecting member 30 is disposed by applying an insulating material, printing, molding, sticking, or the like.

図４は、リードフレーム１０の間隙部１５に第１の連結絶縁材料２０を印刷法により配設する工程を示す図である。ここでは、予め前記した形状に形成されたリードフレーム１０を、リードフレーム固定台７０上にセットし固定する。次に、そのリードフレーム１０の間隙部１５と同じ形状の間隙部８１が形成された印刷用スクリーン８０をリードフレーム１０の上面に、間隙部１５と間隙部８１が合致するように位置決めする。そして、その印刷用スクリーン８０の上面から、第１の連結絶縁材料２０となるレジスト等のペースト状の絶縁材料９０をスキージ１００により間隙部１５，８１内に充填させる。最後に、リードフレーム１０から印刷用スクリーン８０を取り外し、リードフレーム固定台７０からリードフレーム１０を取り外して、絶縁材料９０を乾燥させると、最終的に第１の連結絶縁材料２０が間隙部１５に充填配設される。   FIG. 4 is a diagram illustrating a process of disposing the first coupling insulating material 20 in the gap 15 of the lead frame 10 by a printing method. Here, the lead frame 10 formed in the above-described shape is set and fixed on the lead frame fixing base 70. Next, the printing screen 80 in which the gap portion 81 having the same shape as the gap portion 15 of the lead frame 10 is formed is positioned on the upper surface of the lead frame 10 so that the gap portion 15 and the gap portion 81 coincide with each other. Then, from the upper surface of the printing screen 80, a paste-like insulating material 90 such as a resist that becomes the first coupling insulating material 20 is filled into the gaps 15 and 81 by the squeegee 100. Finally, the printing screen 80 is removed from the lead frame 10, the lead frame 10 is removed from the lead frame fixing base 70, and the insulating material 90 is dried. Filled and arranged.

第１の連結絶縁材料２０の充填厚さは、ペースト状の絶縁材料９０の粘度、スキージ１００の圧力、間隙部１５の大きさ等を調整することにより行う。また、リードフレーム固定台７０はこれをテフロン製にすると、そこからリードフレーム１０を取り外し易くなる。   The filling thickness of the first connecting insulating material 20 is performed by adjusting the viscosity of the paste-like insulating material 90, the pressure of the squeegee 100, the size of the gap portion 15, and the like. If the lead frame fixing base 70 is made of Teflon, the lead frame 10 can be easily removed therefrom.

図５は、リードフレーム１０の間隙部１５に第１の連結絶縁材料２０を樹脂充填法により配設する工程を示す図である。ここでは、前記した形状のリードフレーム１０を、そのリードフレーム１０の厚み分のモールド空間をもつモールド金型１１０，１２０の間にセットしてから、樹脂注入口１１１より樹脂を注入する。このとき、樹脂は間隙部１５内を伝わって注入されて行きそこに充満する。リードフレーム１０には複数の単位Ａが形成されるので、例えばその単位Ａの並ぶ列毎に樹脂注入口１１１を設けたモード金型を使用することにより、複雑な金型にすることなく、量産性高く第１の連結部材２０を配設することができる。   FIG. 5 is a diagram illustrating a process of disposing the first connection insulating material 20 in the gap 15 of the lead frame 10 by a resin filling method. Here, the lead frame 10 having the above-described shape is set between mold dies 110 and 120 having a mold space corresponding to the thickness of the lead frame 10, and then the resin is injected from the resin injection port 111. At this time, the resin is injected through the gap 15 and fills there. Since a plurality of units A are formed in the lead frame 10, for example, by using a mode die provided with a resin injection port 111 for each row in which the units A are arranged, mass production is possible without using a complicated die. The first connecting member 20 can be disposed with high performance.

図６は、リードフレーム１０の裏面に第２の連結絶縁材料３０を配設する工程を示す図である。ここでは、リードフレーム１０の裏面の突起部１２ａ，１３ａの外形に対応する孔１３１が予め形成された絶縁テープ１３０を弾力性をもった加圧ローラ１４０によりリードフレーム１０の裏面に押し当てて貼着することにより、第２の連結部材３０を配設する。このとき必要に応じて接着剤を使用したり加熱圧着する。   FIG. 6 is a diagram illustrating a process of disposing the second coupling insulating material 30 on the back surface of the lead frame 10. Here, the insulating tape 130 in which holes 131 corresponding to the outer shapes of the protrusions 12a and 13a on the back surface of the lead frame 10 are formed is pressed against the back surface of the lead frame 10 by the pressure roller 140 having elasticity. The second connecting member 30 is disposed by wearing. At this time, an adhesive is used or thermocompression bonded as necessary.

図７はリードフレーム１０の裏面に第２の連結絶縁材料３０を配設するときに同時に第１の連結絶縁材料２０も配設する工程を示す図である。ここでは、図６において使用した絶縁テープ１３０を、より肉厚でより柔軟性の高い絶縁テープ１５０に代え、さらに図６において使用した加圧ローラ１４０よりも柔軟な材料がローラ面に使用されている加圧ローラ１６０を使用する。１５１は突起部１２ａ，１３ａの外形に対応する孔である。以上により、絶縁テープ１５０はリードフレーム１０のダイアイランド部１１、延長部１２、リード部１３、枠部１４の裏面に配設されるのみならず、間隙部１５内に凹形状に入り込み、絶縁テープ１５０が第１の連結絶縁材料２０および第２の連結絶縁材料３０を兼ねるようになる。このときも必要に応じて接着剤を使用したり加熱圧着する。   FIG. 7 is a diagram showing a process of disposing the first connecting and insulating material 20 at the same time when disposing the second connecting and insulating material 30 on the back surface of the lead frame 10. Here, the insulating tape 130 used in FIG. 6 is replaced with a thicker and more flexible insulating tape 150, and a material more flexible than the pressure roller 140 used in FIG. 6 is used for the roller surface. The pressure roller 160 is used. 151 is a hole corresponding to the outer shape of the protrusions 12a and 13a. As described above, the insulating tape 150 is not only disposed on the back surface of the die island portion 11, the extension portion 12, the lead portion 13, and the frame portion 14 of the lead frame 10, but also enters a concave shape in the gap portion 15. 150 also serves as the first connection insulating material 20 and the second connection insulation material 30. At this time, an adhesive is used or heat-bonded as necessary.

なお、リードフレーム１０の裏面に第２の連結絶縁材料３０を配設する工程においては、突起部１２ａ，１３ａの外形に対応した孔が形成されていない絶縁テープ１３０，１５０をリードフレーム１０の裏面の全面に貼り付け、その突起部１２ａ，１３ａの外形に対応した部分を事後的に除去して、突起部１２ａ，１３ａおよび凹部１２ｃ，１３ｃを裏面に露出させるようにしてもよい。また、リードフレーム１０の１２ａは必ずしも必要ない。このように突起部１２ａが不要なときは、第２の連結絶縁材料３０は突起部１３ａ以外の部分を全て覆うことになる。   In the step of disposing the second connecting insulating material 30 on the back surface of the lead frame 10, the insulating tapes 130 and 150 in which holes corresponding to the outer shapes of the protrusions 12 a and 13 a are not formed are used as the back surface of the lead frame 10. The projections 12a and 13a and the recesses 12c and 13c may be exposed on the back surface by removing the portions corresponding to the outer shapes of the projections 12a and 13a. Moreover, 12a of the lead frame 10 is not necessarily required. Thus, when the projection part 12a is unnecessary, the 2nd connection insulation material 30 will cover all parts other than the projection part 13a.

以上のようにして第１の連結絶縁材料２０および第２の連結絶縁材料３０が配設されたリードフレーム１０が完成すると、次にこのリードフレーム１０の各単位Ａのダイアイランド部１１に半導体素子４０をＡｇペースト等の導電接着剤によりボンディングし、続けて半導体素子４０の上面の電極とリードフレーム１０のリード部１３との間に金線等の配線材料５０をボンディングする。   When the lead frame 10 in which the first connecting insulating material 20 and the second connecting insulating material 30 are arranged as described above is completed, the semiconductor element is then formed on the die island portion 11 of each unit A of the lead frame 10. 40 is bonded by a conductive adhesive such as an Ag paste, and then a wiring material 50 such as a gold wire is bonded between the electrode on the upper surface of the semiconductor element 40 and the lead portion 13 of the lead frame 10.

次に、半導体素子４０が単位Ａ毎に搭載されたリードフレーム１０をトランスファ金型にセットして、通常の手法により樹脂を注入して封止樹脂６０によるパッケージングを行う。このとき、リードフレーム１０の裏面方向への樹脂の流れは、第１の連結絶縁材料２０の部分で停止されるので、その裏面に樹脂のバリが生じるようなことはない。また、この樹脂はリードフレーム１０の突起部１２ａ，１３ａに対応する凹部１２ｂ，１３ｂに入り込むので、リードフレーム１０との接合面積が大きくなり、十分な剥離強度を得ることができる。この後、封止樹脂６０の裏面から外部に露出するリードフレーム１０の突起部１２ａ，１３ａおよび凹部１２ｃ、１３ｃの部分をＳｎ等によりメッキすることにより腐蝕防止処理を施す。   Next, the lead frame 10 on which the semiconductor element 40 is mounted for each unit A is set in a transfer mold, and resin is injected by a normal method to perform packaging with the sealing resin 60. At this time, the flow of the resin toward the back surface of the lead frame 10 is stopped at the portion of the first connection insulating material 20, so that no resin burr is generated on the back surface. Further, since this resin enters the recesses 12b and 13b corresponding to the protrusions 12a and 13a of the lead frame 10, the bonding area with the lead frame 10 is increased, and sufficient peel strength can be obtained. Thereafter, the portions of the protrusions 12a and 13a and the recesses 12c and 13c of the lead frame 10 exposed to the outside from the back surface of the sealing resin 60 are plated with Sn or the like to perform a corrosion prevention process.

以上によりリードフレーム１０の上面には、図８に示すように半導体素子４０と配線材料５０を１組とするものが横方向および縦方向に複数個並ぶので、次に、部分Ｂをレーザやダイシングブレード等を使用したダイシングによりカットし、各単位Ａ毎に分離する。そして最後に、個片化された半導体装置をテストし、マーキングする。   As described above, a plurality of semiconductor elements 40 and wiring material 50 as one set are arranged in the horizontal and vertical directions on the upper surface of the lead frame 10 as shown in FIG. Cut by dicing using a blade or the like and separate into units A. Finally, the separated semiconductor device is tested and marked.

リードフレーム１０の突起部１２ａ，１３ａおよび凹部１２ｃ、１３ｃの部分にメッキ部１７０を形成した後に図８に示した方法により半導体装置を単位Ａ毎に分離する場合は、メッキ部１７０は図９(a)，(b)に示すように、裏面に露出する突起部１２ａ，１３ａおよび凹部１２ｃ，１３ｃのみに形成されるが、図１０に示すように、裏面からリードフレーム１０の厚み分だけ部分Ｃをハーフカットしてから、裏面にメッキ部１７０を施し、その後に封止樹脂６０の上側から部分Ｄをフルカットして単位Ａ毎に分離すると、図１１(a)，(b)に示すように、メッキ部１７０が突起部１２ａ，１３ａおよびその凹部１２ｃ、１３ｃのみならず突起部１２ａ，１３ａおよびその凹部１２ｃ、１３ｃの切断面端面にも形成されるので、突起部１２ａ，１３ａおよびその凹部１２ｃ、１３ｃの外部に露出する部分の全部が腐食防止処理される。   In the case where the semiconductor device is separated for each unit A by the method shown in FIG. 8 after the plating portion 170 is formed in the protruding portions 12a and 13a and the concave portions 12c and 13c of the lead frame 10, the plating portion 170 is formed as shown in FIG. As shown in a) and (b), the protrusions 12a and 13a and the recesses 12c and 13c exposed on the back surface are formed only. However, as shown in FIG. 11 is half-cut, and then the plated portion 170 is applied to the back surface, and then the portion D is fully cut from the upper side of the sealing resin 60 and separated into units A, as shown in FIGS. 11 (a) and 11 (b). In addition, since the plating portion 170 is formed not only on the projections 12a and 13a and the recesses 12c and 13c, but also on the end surfaces of the projections 12a and 13a and the recesses 12c and 13c, the projections 12a and 13 And the concave portion 12c, a total of the portion exposed to the outside of 13c is corrosion prevention treatment.

以上のようにして形成される実施例１の半導体装置は、これを実装基板（図示せず）に実装するとき、リードフレーム１０の裏面に形成した突起部１２ａ，１３ａおよびその凹部１２ｃ、１３ｃがハンダにより実装基板の配線パターンに接着されるが、実装基板との間にスタンドオフができるので、半導体装置がハンダにより浮き上がることはなくその位置ズレが防止でき、またハンダ量を調整することにより、ハンダ接合部に均一にハンダが行き渡るようになり、ハンダ接合のバラツキも防止することができる。   When the semiconductor device of Example 1 formed as described above is mounted on a mounting substrate (not shown), the protrusions 12a and 13a and the recesses 12c and 13c formed on the back surface of the lead frame 10 are Although it is bonded to the wiring pattern of the mounting board by solder, it can be standoff between the mounting board, so that the semiconductor device will not be lifted by solder and its positional deviation can be prevented, and by adjusting the amount of solder, Solder spreads uniformly over the solder joints, and variations in solder joints can be prevented.

このとき、リードフレーム１０の延長部１２の切断された突起部１２ａやリード部１３の切断された突起部１３ａは方形や丸形ではなく長方形状となり、しかも凹部１２ｃ，１３ｃを有するので、配線パターンへの接着面積が大きくなりハンダ接合強度が大きくなる。また、前記した単位Ａへの分離の際に突起部１２ａ，１３ａおよび凹部１２ｃ，１３ｃの切断面が樹脂６０の切断面と略同一面となり側面に露出しそこにもハンダが付着するので、ハンダの接合状態を容易に目視チェックすることもできる。さらに、突起部１２ａ，１３ａの切断端面の断面形状を当該突起部１２ａ，１３ａの反対面側に凹部１２ｂ，１３ｂ（但し、１２ｂは図示せず）を有する形状としているので、切断端面でのハンダの過剰な盛り上がりを抑制することができる。さらに、実装基板において、突起部１２ａ，１３ａがハンダ付けされる部分の間にグランド配線や信号配線が配設されている場合には、それを突起部１２ａ，１３ａによって跨ぐことができる。   At this time, the cut protrusion 12a of the extension 12 of the lead frame 10 and the cut protrusion 13a of the lead 13 are not rectangular or round but rectangular, and have recesses 12c and 13c. The adhesion area to the solder increases and the solder joint strength increases. In addition, since the cut surfaces of the protrusions 12a and 13a and the recesses 12c and 13c become substantially the same as the cut surface of the resin 60 and are exposed on the side surfaces during the separation into the unit A, the solder adheres there. It is also possible to easily visually check the joining state. Further, since the cross-sectional shape of the cut end faces of the protrusions 12a and 13a is formed to have the recesses 12b and 13b (12b not shown) on the opposite side of the protrusions 12a and 13a, the solder on the cut end faces Excessive swell can be suppressed. Furthermore, in the mounting substrate, when a ground wiring or a signal wiring is disposed between the portions to which the protrusions 12a and 13a are soldered, it can be straddled by the protrusions 12a and 13a.

さらに、リードフレーム１０の突起部１２ａ，１３ａの反対面側に凹部１２ｂ，１３ｂ等（但し、１２ｂは図示せず）が形成されるので、封止樹脂６０とリードフレーム１０との接合面積が増大し、剥離強度が増加し信頼性を向上することができる。この凹部１２ｂ，１３ｂ等に代えて、リード部１３の上面に突起部（第３の突起部、図示せず）を形成することもでき、この場合でも同様な作用効果があるが、さらにこの突起部に配線材料５０の一端を接続するようにすればその突起部分が段高となるので、配線材料５０と半導体素子４０の肩部とが接触し難くなり、ショート不良を防止することができる。リードフレーム１０にこの突起部を形成するには、ハーフエッチング処理によりリードフレーム両面から加工して裏面の突起部１２ａ，１３ａ、凹部１２ｃ、１３ｃ、間隙部１５等と共に簡単に形成できる。このようにリードフレーム１０をエッチングにより形成するときは、エッチング表面に粗さが生じるので、封止樹脂６０との密着性が向上し、剥離強度がより強くなる。   Further, since the recesses 12b, 13b and the like (however, 12b is not shown) are formed on the opposite side of the protrusions 12a, 13a of the lead frame 10, the bonding area between the sealing resin 60 and the lead frame 10 increases. In addition, the peel strength can be increased and the reliability can be improved. In place of the recesses 12b, 13b, etc., a protrusion (third protrusion, not shown) can be formed on the upper surface of the lead portion 13, and in this case, the same effect can be obtained. If one end of the wiring material 50 is connected to the portion, the protruding portion becomes stepped, so that the wiring material 50 and the shoulder portion of the semiconductor element 40 are difficult to contact, and a short circuit failure can be prevented. In order to form this protrusion on the lead frame 10, it can be easily formed along with the protrusions 12a and 13a on the back surface, the recesses 12c and 13c, the gap 15 and the like by processing from both sides of the lead frame by a half etching process. Thus, when the lead frame 10 is formed by etching, the etching surface becomes rough, so that the adhesion with the sealing resin 60 is improved and the peel strength is further increased.

また、実施例１では第１の連結絶縁材料２０や第２の連結絶縁材料３０を使用しているので、封止樹脂６０が間隙部１５からリードフレーム１０の裏面側に流れ出すことはなく、裏面側に樹脂バリが生じることはない。第１の連結絶縁材料２０と第２の連結絶縁材料３０は少なくともその一方を配設すれば、樹脂ストッパとして働く。第１の連結絶縁材料２０は間隙部１５内に絶縁材料をモールド（図５）、塗布、印刷（図４）等をすることにより簡単に充填配設することができる。塗布方法によるときは、間隙部１５以外に付着した絶縁材料は後で除去するようにしても良い。モールドにより充填配設するときは、封止樹脂６０と同じ樹脂を使用すると、樹脂の温度膨張係数の違いによる不都合を防止できる。第２の連結絶縁材料３０は絶縁テープをリードフレーム１０の裏面に貼付することで（図６）簡単に配設できる。また、第２の連結絶縁材料３０を間隙部１５内に埋め込み第１の連結絶縁材料２０を兼ねるようにリードフレーム１０の裏面に配設する（図７）ときは、間隙部１５の上側開口部に段部が生じ、そこに封止樹脂６０が充填されるので、封止樹脂６０の剥離強度がさらに強くなる。   In the first embodiment, since the first connecting insulating material 20 and the second connecting insulating material 30 are used, the sealing resin 60 does not flow out from the gap portion 15 to the back surface side of the lead frame 10. There is no resin burr on the side. If at least one of the first connecting insulating material 20 and the second connecting insulating material 30 is disposed, it functions as a resin stopper. The first connecting insulating material 20 can be easily filled and disposed in the gap 15 by molding the insulating material (FIG. 5), coating, printing (FIG. 4) or the like. When the coating method is used, the insulating material attached to other than the gap 15 may be removed later. When filling and disposing with a mold, the same resin as the sealing resin 60 can be used to prevent inconvenience due to the difference in the temperature expansion coefficient of the resin. The second connecting insulating material 30 can be easily disposed by sticking an insulating tape to the back surface of the lead frame 10 (FIG. 6). When the second connecting insulating material 30 is embedded in the gap 15 and disposed on the back surface of the lead frame 10 so as to serve also as the first connecting insulating material 20 (FIG. 7), the upper opening of the gap 15 is formed. Since the step portion is formed and filled with the sealing resin 60, the peeling strength of the sealing resin 60 is further increased.

図２は実施例２の半導体装置を示す図で、(a)は透視正面図、(b)は裏面図、(c)は変形例の裏面図である。実施例１ではリードフレーム１０のダイアイランド部１１の裏面には突起部を形成しなかったが、この実施例２ではそのダイアイランド部１１の裏面の略中央に突出するように前記した突起部１２ａ，１３ａと略同一高さの突起部１１ａ（第２の突起部）を形成する。１１ｂはこの突起部１１ａの反対面側に形成される凹部である。１１ｃはこの突起部１１ａの略中央部にくぼむように形成された凹部（第２の凹部）である。これらはプレスやエッチングにより形成することができる。この結果、突起部１１ａは連続するリング枠形状のリブとなる。この突起部１１ａおよび凹部１１ｃにも、最終的にＳｎ等によるメッキで腐食防止処理を施す。   2A and 2B are diagrams showing a semiconductor device of Example 2, wherein FIG. 2A is a perspective front view, FIG. 2B is a rear view, and FIG. 2C is a rear view of a modification. In the first embodiment, no protrusion is formed on the back surface of the die island portion 11 of the lead frame 10. However, in the second embodiment, the above-described protrusion 12 a protrudes substantially at the center of the back surface of the die island portion 11. , 13a is formed to have a protrusion 11a (second protrusion) having substantially the same height. Reference numeral 11b denotes a recess formed on the opposite surface side of the protrusion 11a. Reference numeral 11c denotes a recess (second recess) formed so as to be recessed in a substantially central portion of the projection 11a. These can be formed by pressing or etching. As a result, the protrusion 11a becomes a continuous ring frame-shaped rib. The protrusion 11a and the recess 11c are finally subjected to corrosion prevention treatment by plating with Sn or the like.

このようなリードフレーム１０をもつ半導体装置では、ダイアイランド部１１の裏面が突起部１１ａおよび凹部１１ｃにより実装基板に対して半田付けされるので、放熱性の向上を図ることができると共に、スタンドオフ機能が発揮され安定なハンダ付着性を得ることができる。   In the semiconductor device having such a lead frame 10, since the back surface of the die island portion 11 is soldered to the mounting substrate by the protruding portion 11a and the recessed portion 11c, the heat dissipation can be improved and the stand-off can be achieved. The function is exhibited and stable solder adhesion can be obtained.

なお、図２(c)に示すように、一部に切り欠き部を有するリング枠形状のリブとなるように突起部１１ａ’と凹部１１ｃ’を形成したときは、上記と同様な作用効果に加えて、突起部１１ａ’の切り欠き部によって、ハンダ付着時に凹部１１ｃ’のフラックス等を外部に逃がす洗浄効果を発揮させることができる。   As shown in FIG. 2 (c), when the protrusion 11a 'and the recess 11c' are formed so as to form a ring frame-shaped rib having a notch in part, the same effect as described above can be obtained. In addition, the notch portion of the protrusion 11a ′ can exert a cleaning effect that releases the flux of the recess 11c ′ to the outside when the solder is attached.

実施例１の半導体装置を示す図で、(a)は透視正面図、(b)は正面図、(c)は側面図、(d)は裏面図である。BRIEF DESCRIPTION OF THE DRAWINGS It is a figure which shows the semiconductor device of Example 1, (a) is a transparent front view, (b) is a front view, (c) is a side view, (d) is a back view. 実施例２の半導体装置を示す図で、(a)は透視正面図、(b)は裏面図、(c)は変形例の裏面図であるFIG. 7 is a diagram illustrating a semiconductor device of Example 2, in which (a) is a perspective front view, (b) is a back view, and (c) is a back view of a modification. 実施例１のリードフレームの部分裏面図である。3 is a partial rear view of the lead frame of Example 1. FIG. 実施例１のリードフレームの間隙部に第１の連結絶縁材料を印刷法により配設する説明図である。FIG. 6 is an explanatory diagram in which a first connection insulating material is disposed in a gap portion of the lead frame of Example 1 by a printing method. 実施例１のリードフレームの間隙部に第１の連結絶縁材料をモールド法により配設する説明図である。FIG. 3 is an explanatory diagram in which a first connection insulating material is disposed in a gap portion of a lead frame of Example 1 by a molding method. 実施例１のリードフレームの裏面に第２の連結絶縁材料を配設する説明図である。FIG. 6 is an explanatory diagram in which a second coupling insulating material is disposed on the back surface of the lead frame of Example 1. 実施例１のリードフレームの裏面に第２の連結絶縁材料を配設する別の説明図である。FIG. 6 is another explanatory diagram in which a second connection insulating material is disposed on the back surface of the lead frame according to the first embodiment. 実施例１のリードフレームの上面の半導体素子を樹脂封止しメッキしてダイシングする説明図である。FIG. 6 is an explanatory diagram of dicing by sealing a semiconductor element on the top surface of the lead frame of Example 1 with resin sealing. (a)は図８の手法によりダイシングした半導体装置の正面図、(b)は側面図である。(a) is a front view of the semiconductor device diced by the method of FIG. 8, and (b) is a side view. (a)は実施例１のリードフレームの上面の半導体素子を樹脂封止してリードフレーム部分をハーフカットしてメッキする説明図、(b)はハーフカットした後フルカットしてダイシングする説明図である。(a) is an explanatory view in which the semiconductor element on the upper surface of the lead frame of Example 1 is resin-sealed and the lead frame portion is half-cut and plated, and (b) is an explanatory view in which the half-cut is followed by full cut and dicing. It is. (a)は図１０の手法によりダイシングした半導体装置の正面図、(b)は側面図である。(a) is a front view of the semiconductor device diced by the method of FIG. 10, and (b) is a side view.

符号の説明Explanation of symbols

１０：リードフレーム、１１：ダイアイランド部、１２：延長部、１３：リード部、１１ａ，１２ａ，１３ａ：突起部、１１ｂ，１３ｂ：凹部、１１ｃ，１１ｃ’，１２ｃ，１３ｃ：凹部
２０：第１の連結絶縁材料
３０：第２の連結絶縁材料
４０：半導体素子
５０：配線材料
６０：封止樹脂
７０：リードフレーム固定台
８０：印刷用スクリーン
９０：ペースト状の絶縁材料
１００：スキージ
１１０，１２０：モールド金型、１１１：樹脂注入口
１３０：絶縁テープ
１４０：加圧ローラ
１５０：絶縁テープ
１６０：加圧ローラ 10: lead frame, 11: die island, 12: extension, 13: lead, 11a, 12a, 13a: protrusion, 11b, 13b: recess, 11c, 11c ′, 12c, 13c: recess 20: first 30: second connection insulation material 40: semiconductor element 50: wiring material 60: sealing resin 70: lead frame fixing base 80: printing screen 90: paste-like insulation material 100: squeegee 110, 120: Mold: 111: Resin inlet 130: Insulating tape 140: Pressure roller 150: Insulating tape 160: Pressure roller

Claims (11)

延長部を有するダイアイランド部と、該ダイアイランド部の所定の辺に沿う方向に配列された複数のリード部と、前記延長部および前記各リード部と連続する枠部と、前記延長部、前記ダイアイランド部、前記リード部、および前記枠部を区画する間隙部の一部と、を１単位として複数単位が連続形成されたリードフレームであって、
前記各リード部の裏面側に突出するように形成され且つ略中央部にくぼむ第１の凹部を有する第１の突起部と、
前記間隙部を埋めると共に前記第１の突起部および前記第１の凹部を除く裏面全面に配設された絶縁材料とを具備し、
且つ、前記複数のリード部の前記第１の突起部は、前記複数のリード部の並びの方向と直交する方向が長い長方形に形成されていることを特徴とするリードフレーム。 A die island part having an extension part; a plurality of lead parts arranged in a direction along a predetermined side of the die island part; the extension part and a frame part continuous with each lead part; the extension part; A lead frame in which a plurality of units are continuously formed with a die island portion, the lead portion, and a part of a gap section defining the frame portion as one unit,
A first protrusion having a first recess formed so as to protrude from the back side of each lead portion and recessed in a substantially central portion;
An insulating material that fills the gap and is disposed on the entire back surface excluding the first protrusion and the first recess,
The lead frame is characterized in that the first protrusions of the plurality of lead portions are formed in a rectangle having a long direction perpendicular to the direction in which the plurality of lead portions are arranged. 請求項１に記載のリードフレームにおいて、
前記ダイアイランド部の裏面側に突出するように形成され且つ略中央部にくぼむ第２の凹部を有する第２の突起部を具備し、前記絶縁材料は前記間隙部を埋めると共に前記第１および第２の突起部並びに前記第１および第２の凹部を除く裏面全面に配設されていることを特徴とするリードフレーム。 The lead frame according to claim 1,
A second protrusion having a second recess formed to protrude toward the back surface of the die island and recessed substantially in the center; and the insulating material fills the gap and the first A lead frame, wherein the lead frame is disposed on the entire back surface except for the first and second protrusions and the first and second recesses. 請求項２に記載のリードフレームにおいて、
前記第２の突起部と前記第２凹部とで、前記ダイアイランド部の裏面で連続し又は一部切り欠き部を有するリング枠部が形成されていることを特徴とするリードフレーム。 The lead frame according to claim 2,
A lead frame, wherein the second protrusion and the second recess form a ring frame part that is continuous or partially cut out on the back surface of the die island part. 請求項２又は３に記載のリードフレームにおいて、
前記第１の突起部の高さと前記第２の突起部の高さを略同一とし、前記第２の凹部が実装基板との間でスタンドオフ部の一部を構成するようにしたことを特徴とするリードフレーム。 The lead frame according to claim 2 or 3,
The height of the first protrusion and the height of the second protrusion are substantially the same, and the second recess constitutes a part of a stand-off portion with respect to the mounting substrate. And lead frame. 請求項１乃至４のいずれか１つに記載のリードフレームにおいて、
前記リード部における前記第１の突起部の反対面に第３の凹部又は第３の突起部が形成されていることを特徴とするリードフレーム。 The lead frame according to any one of claims 1 to 4,
A lead frame, wherein a third recess or a third protrusion is formed on a surface of the lead portion opposite to the first protrusion. 請求項１乃至５のいずれか１つに記載のリードフレームの１単位と、該１単位のリードフレームの前記ダイアイランド部に搭載された半導体素子と、該半導体素子の電極と前記１単位のリードフレームの前記リード部との間を接続する配線材料と、前記半導体素子および前記配線材料を覆うように前記リードフレームの上面側にモールドされた樹脂とを具備し、前記第１の突起部および前記第１の凹部の切断端面が前記樹脂の切断端面と略同一面となって前記樹脂の側面から露出していることを特徴とする半導体装置。   6. One unit of the lead frame according to claim 1, a semiconductor element mounted on the die island portion of the one unit lead frame, an electrode of the semiconductor element, and the one unit lead A wiring material for connecting between the lead portions of the frame; and a resin molded on the upper surface side of the lead frame so as to cover the semiconductor element and the wiring material; A semiconductor device, wherein a cut end face of the first recess is substantially flush with a cut end face of the resin and is exposed from a side face of the resin. 請求項６に記載の半導体装置において、
前記第１の突起部および前記第１の凹部およびそれらの切断端面の少なくとも一部は、メッキ部によって覆われていることを特徴とする半導体装置。 The semiconductor device according to claim 6.
At least a part of the first protrusion, the first recess, and their cut end faces are covered with a plating part. 延長部を有するダイアイランド部と、該ダイアイランド部の所定の辺に沿う方向に配列された複数のリード部と、該各リード部の裏面に突出する第１の突起部と、該第１の突起部の略中央部にくぼむ第１の凹部と、前記延長部および前記各リード部と連続する枠部と、前記延長部、前記ダイアイランド部、前記リード部、および前記枠部を区画する間隙部の一部と、を１単位とし複数単位が連続する形状にリードフレームを加工する第１の工程、
前記間隙部を埋めるように第１の連結絶縁材料を配設する第２の工程、
前記第１の突起部および前記第１の凹部を除く前記リードフレームの裏面全面に第２の連結絶縁材料を配設する第３の工程、
の内の第１と第２と第３の工程又は第１と第３の工程を具備することを特徴とするリードフレームの製造方法。 A die island portion having an extension portion; a plurality of lead portions arranged in a direction along a predetermined side of the die island portion; a first protrusion portion protruding from the back surface of each lead portion; A first recess recessed in a substantially central portion of the protrusion, a frame portion continuous with the extension portion and the lead portions, and the extension portion, the die island portion, the lead portion, and the frame portion. A first step of processing the lead frame into a shape in which a plurality of units are continuous with a part of the gap portion as one unit;
A second step of disposing a first coupling insulating material so as to fill the gap;
A third step of disposing a second connection insulating material on the entire back surface of the lead frame excluding the first protrusion and the first recess;
A method for manufacturing a lead frame comprising the first, second and third steps or the first and third steps. 請求項８に記載のリードフレームの製造方法において、
前記ダイアイランド部の裏面側に第２の突起部と該第２の突起部の略中央部にくぼむ第２の凹部を形成する第４の工程を具備し、
前記第３の工程を前記第１および第２の突起部ならびに前記第１および第２の凹部を除く前記リードフレームの裏面全面に前記第２の連結絶縁材料を配設する工程に置き換えたことを特徴とするリードフレームの製造方法。 In the manufacturing method of the lead frame according to claim 8,
A fourth step of forming a second protrusion and a second recess recessed in a substantially central portion of the second protrusion on the back side of the die island;
The third step is replaced with a step of disposing the second connection insulating material on the entire back surface of the lead frame excluding the first and second protrusions and the first and second recesses. A method for manufacturing a lead frame. 請求項８又は９の製造方法にてリードフレームを製造する工程と、
前記リードフレームの前記ダイアイランド部に半導体素子を搭載し該半導体素子の電極と前記リード部とを配線材料により接続する工程と、
前記リードフレームの前記半導体素子側を樹脂で封止する工程と、
前記樹脂および前記リードフレームを前記第１の突起部および前記第１の凹部の切断面が前記樹脂の切断面と略同一面となるようにダイシングにより切断して前記単位毎に分離する工程と、
を具備することを特徴とする半導体装置の製造方法。 Producing a lead frame by the production method according to claim 8 or 9,
Mounting a semiconductor element on the die island part of the lead frame and connecting the electrode of the semiconductor element and the lead part with a wiring material;
Sealing the semiconductor element side of the lead frame with resin;
Cutting the resin and the lead frame by dicing so that the cut surfaces of the first protrusion and the first recess are substantially flush with the cut surface of the resin;
A method for manufacturing a semiconductor device, comprising: 請求項１０に記載の半導体装置の製造方法において、
前記分離する工程を、前記リードフレームの裏面側から少なくとも前記リードフレームまでハーフカットする工程と、前記リードフレームの裏面側を前記リードフレームの切断面も含めてメッキする工程と、前記樹脂の上面側から前記ハーフカット部分までを切断して前記第１の突起部および前記第１の凹部の切断面が前記樹脂の切断面と略同一面となるように前記単位毎に分離する工程に置き換えたことを特徴とする半導体装置の製造方法。 In the manufacturing method of the semiconductor device according to claim 10,
The separating step includes a step of half-cutting from the back surface side of the lead frame to at least the lead frame, a step of plating the back surface side of the lead frame including the cut surface of the lead frame, and an upper surface side of the resin. To the half-cut portion and replaced with a step of separating each unit so that the cut surface of the first protrusion and the first recess is substantially the same as the cut surface of the resin. A method of manufacturing a semiconductor device.
JP2004118641A 2004-04-14 2004-04-14 Lead frame, semiconductor device, and manufacturing method of them Pending JP2005303107A (en)

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