WO2007054858A3 - Integrated capacitor arrangement for ultrahigh capacitance values - Google Patents

Integrated capacitor arrangement for ultrahigh capacitance values Download PDF

Info

Publication number
WO2007054858A3
WO2007054858A3 PCT/IB2006/054063 IB2006054063W WO2007054858A3 WO 2007054858 A3 WO2007054858 A3 WO 2007054858A3 IB 2006054063 W IB2006054063 W IB 2006054063W WO 2007054858 A3 WO2007054858 A3 WO 2007054858A3
Authority
WO
WIPO (PCT)
Prior art keywords
electrically conductive
conductive layers
capacitor
trench
electronic device
Prior art date
Application number
PCT/IB2006/054063
Other languages
French (fr)
Other versions
WO2007054858A2 (en
Inventor
Freddy Roozeboom
Johan H Klootwijk
Antonius L A M Kemmeren
Derk Reefman
Johannes F C M Verhoeven
Original Assignee
Nxp Bv
Freddy Roozeboom
Johan H Klootwijk
Antonius L A M Kemmeren
Derk Reefman
Johannes F C M Verhoeven
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nxp Bv, Freddy Roozeboom, Johan H Klootwijk, Antonius L A M Kemmeren, Derk Reefman, Johannes F C M Verhoeven filed Critical Nxp Bv
Priority to JP2008539554A priority Critical patent/JP5033807B2/en
Priority to US12/092,608 priority patent/US8085524B2/en
Priority to EP06821292A priority patent/EP1949418A2/en
Priority to CN2006800414212A priority patent/CN101341576B/en
Publication of WO2007054858A2 publication Critical patent/WO2007054858A2/en
Publication of WO2007054858A3 publication Critical patent/WO2007054858A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
    • H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
    • H01L28/91—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions made by depositing layers, e.g. by depositing alternating conductive and insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0805—Capacitors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H01L29/94—Metal-insulator-semiconductors, e.g. MOS
    • H01L29/945—Trench capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
    • H10B12/0387—Making the trench

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

The present invention relates to an electronic device (300) comprising at least one trench capacitor (302) that can also take the form of an inverse structure, a pillar capacitor. An alternating layer sequence (308) of at least two dielectric layers (312, 316) and at least two electrically conductive layers (314, 318) is provided in the trench capacitor or on the pillar capacitor, such that the at least two electrically conductive layers are electrically isolated from each other and from the substrate by respective ones of the at least two dielectric layers. A set of internal contact pads (332, 334, 340) is provided, and each internal contact pad is connected with a respective one of the electrically conductive layers or with the substrate. By providing an individual internal contact pad for each of the electrically conductive layers, a range of switching opportunities is opened up that allows tuning the specific capacitance of the capacitor to a desired value. The electronic device of the invention thus provides a flexible trench-capacitor manufacturing platform for a multitude of combinations of electrically conductive layers with each other, or, when multiple trenches are used, between electrically conductive layers of different trench capacitors. On-chip applications such as a charge-pump circuit or a DC-to-DC voltage converter are claimed that benefit from the ultra-high capacitance density and the high breakdown voltage that can be achieved with the electronic device of the invention.
PCT/IB2006/054063 2005-11-08 2006-11-02 Integrated capacitor arrangement for ultrahigh capacitance values WO2007054858A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2008539554A JP5033807B2 (en) 2005-11-08 2006-11-02 Integrated capacitor placement for extremely high capacitance values
US12/092,608 US8085524B2 (en) 2005-11-08 2006-11-02 Integrated capacitor arrangement for ultrahigh capacitance values
EP06821292A EP1949418A2 (en) 2005-11-08 2006-11-02 Integrated capacitor arrangement for ultrahigh capacitance values
CN2006800414212A CN101341576B (en) 2005-11-08 2006-11-02 Integrated capacitor arrangement for ultrahigh capacitance values

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP05110488 2005-11-08
EP05110488.3 2005-11-08

Publications (2)

Publication Number Publication Date
WO2007054858A2 WO2007054858A2 (en) 2007-05-18
WO2007054858A3 true WO2007054858A3 (en) 2007-09-27

Family

ID=38023647

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2006/054063 WO2007054858A2 (en) 2005-11-08 2006-11-02 Integrated capacitor arrangement for ultrahigh capacitance values

Country Status (6)

Country Link
US (1) US8085524B2 (en)
EP (1) EP1949418A2 (en)
JP (1) JP5033807B2 (en)
CN (1) CN101341576B (en)
TW (1) TWI415270B (en)
WO (1) WO2007054858A2 (en)

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Also Published As

Publication number Publication date
US8085524B2 (en) 2011-12-27
WO2007054858A2 (en) 2007-05-18
JP5033807B2 (en) 2012-09-26
CN101341576B (en) 2012-05-30
JP2009515353A (en) 2009-04-09
CN101341576A (en) 2009-01-07
US20080291601A1 (en) 2008-11-27
EP1949418A2 (en) 2008-07-30
TW200729518A (en) 2007-08-01
TWI415270B (en) 2013-11-11

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