WO2007037564A1 - Appareil de fabrication utilisant un laser - Google Patents

Appareil de fabrication utilisant un laser Download PDF

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Publication number
WO2007037564A1
WO2007037564A1 PCT/KR2005/003231 KR2005003231W WO2007037564A1 WO 2007037564 A1 WO2007037564 A1 WO 2007037564A1 KR 2005003231 W KR2005003231 W KR 2005003231W WO 2007037564 A1 WO2007037564 A1 WO 2007037564A1
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WO
WIPO (PCT)
Prior art keywords
wafer
laser beam
cutting
cut
length
Prior art date
Application number
PCT/KR2005/003231
Other languages
English (en)
Inventor
You-Hie Han
Jung-Rae Park
Jong-Hyun Suh
Original Assignee
Eo Technics Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eo Technics Co., Ltd. filed Critical Eo Technics Co., Ltd.
Priority to PCT/KR2005/003231 priority Critical patent/WO2007037564A1/fr
Publication of WO2007037564A1 publication Critical patent/WO2007037564A1/fr

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/073—Shaping the laser spot
    • B23K26/0736—Shaping the laser spot into an oval shape, e.g. elliptic shape
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26

Definitions

  • the present invention relates to an apparatus for manufacturing an object, and more particularly, to an apparatus for manufacturing an object using a laser that is capable of reducing the amount of by-products generated when the object is processed to a minimum, and improving the manufacturing efficiency.
  • a manufacturing process such as cutting or grooving, is needed to manufacture a product from various materials, such as a wafer, metal, and plastic.
  • a process of cutting a plurality of chips formed on a wafer into individual chips follows. Since the wafer cutting process has a great effect on the quality and productivity of the wafer in the subsequent processes, the wafer cutting process is very important In recent years, for example, a mechanical cutting method or a cutting method using a laser, has been used as the wafer cutting method.
  • Fig. 1 is a diagram illustrating an example of a general mechanical wafer cutting method, in which an apparatus for cutting a wafer uses a sawing method.
  • a wafer 12 having an integrated circuit designed thereon is loaded on a stage 10 and is then cut by a sawing apparatus 20.
  • a cutting blade 26 is fitted to a shaft 24 of a driving motor (not shown) coupled to a fixed body 22.
  • the fixed body 22 includes a side nozzle 28 provided on the right and left sides of the cutting blade 26, a center nozzle 30 provided in front of the cutting blade 26, and an upper nozzle 32 provided above the cutting blade 26.
  • the nozzles 28, 30, and 32 are connected to a cleaning liquid tank 34, and discharge a cleaning liquid at a predetermined pressure.
  • a water curtain 36 is provided at the rear side of the center nozzle 30.
  • the cutting blade 26 contacts a predetermined cutting position (street) of the wafer while rotating at a predetermined velocity, thereby cutting the wafer into unit chips.
  • a cleaning liquid such as deionized water
  • deionized water is discharged from the nozzles 28, 30, and 32 onto the upper surface of the wafer and the cutting blade 26 to remove by-products generated when the wafer is cut and to prevent an increase in the temperature of the wafer.
  • deionized water discharged from the water curtain 36 removes large by-products remaining on the upper surface of the wafer and minute by-products such as dust.
  • the method of mechanically cutting the wafer has problems in that the byproducts are not completely removed by the cleaning liquid, the cutting speed of the wafer is low, and the cutting width of the wafer becomes large.
  • the large cutting width causes circuits formed on the wafer to be damaged.
  • the size of the cutting blade should be adjusted, but there are restrictions in reducing the thickness of the cutting blade.
  • Korean Patent Unexamined Publication No. 10-2003-0090328 discloses a method and apparatus for using a laser beam to cut a silicon wafer, which will be described in detail below with reference to Fig.2.
  • Fig. 2 is a diagram illustrating another example of the general wafer cutting method, in which an apparatus for cutting a wafer using a laser is shown.
  • a wafer 12 is put on a substrate supporting table 10, and the substrate supporting table is moved at a predetermined velocity by a transfer unit (not shown).
  • the wafer cutting apparatus includes a lens 42 for condensing laser beams emitted from a light source 40, a water tank 44 that is supplied with a cleaning liquid from the outside and discharges the cleaning liquid to the outside through a hole that is provided at the center of the bottom thereof, and a draining device 46 that is connected to the water tank 44 in the vertical direction and drains the cleaning liquid from the hole to the outside without creating a whirlpool.
  • the wafer 12 When the wafer cutting apparatus having the above-mentioned structure is used to cut a wafer, the wafer 12 is disposed below the wafer cutting apparatus, the cleaning liquid is discharged, and a laser beam is emitted from the light source 40 to the lens 42.
  • the laser beam radiated to cut the wafer has a width of 20 to 50 ⁇ m.
  • the cleaning liquid discharged from the draining device removes by-products generated when the wafer is cut
  • the method has an advantage in that the wafer can be cut in a straight line or a curved line according to the movement path of the laser beam.
  • the method of cutting a wafer using a laser has a problem in that the by-products are not completely removed, similar to the sawing method.
  • Figs. 3A and 3B are diagrams illustrating problems when the wafer cutting method shown in Fig.2 is used.
  • the problem of the wafer cutting efficiency being lowered due to the recasting of the byproducts can be solved by increasing the cutting width of the wafer. That is, when the cutting width of the wafer increases, a larger amount of by-products are discharged to the outside, which makes it possible to reduce the amount of by-products recast on the cut plane of the wafer to a minimum.
  • the spot of the laser beam must increase, which results in low beam intensity.
  • an increase in the cutting width of the wafer causes the removal efficiency of by-products to be lowered and the wafer not to be completely cut That is, the beam intensity is represented by the intensity of a laser beam per radiated area. When the focal area of the laser beam increases, the radiated area increases, resulting in low beam intensity.
  • the following wafer cutting method may be used: when a wafer is cut, a stage having the wafer loaded thereon is provided on a transfer device and the transfer devices moves relative to a fixed laser, thereby cutting the wafer. That is, a laser beam radiating device is fixed, and the laser beam radiation device radiates a laser beam onto a moving wafer. In this case, the laser beam is radiated onto the wafer in the vertical direction, but the laser beam seems to be obliquely radiated onto the wafer. This is a better method as the transfer speed of the wafer becomes higher.
  • Fig. 4 is a diagram illustrating the recasting of by-products when a laser beam is radiated onto a wafer being moved relative to a laser to cut the wafer.
  • the by-products can be easily discharged. This is means the slope of the cut plane becomes smaller.
  • the transfer speed of the wafer increases, the beam intensity is lowered, which causes the wafer not to be completely cut, but to be fiised.
  • the transfer device operates at high speed, the wafer shakes, and thus the accuracy of the manufacturing process is lowered.
  • the present invention is directed at solving the above-described problems, and it is an object of the present invention to provide an apparatus for manufacturing an object using a laser that is capable of easily removing by-products generated when the object is processed by converting a laser beam into an elliptical laser beam and radiating the elliptical laser beam onto the object so that a cut plane of the object is obliquely formed.
  • an apparatus for manufacturing an object using a laser includes: a light source that emits a laser beam under the control of a control unit that controls the apparatus; and a focus shaping unit that converts the laser beam emitted from the light source into an elliptical laser beam and radiates the elliptical beam onto the surface of the object
  • Fig. 1 is a diagram illustrating an example of a general wafer cutting method.
  • Fig.2 is a diagram illustrating another example of the general wafer cutting example.
  • Figs. 3 A and 3B are diagrams illustrating problems when the wafer cutting method shown in Fig.2 is used.
  • Fig.4 is a diagram illustrating the deposition of by-products when a wafer is cut by a laser.
  • Fig. 5 is a diagram of an apparatus for manufacturing an object using a laser according to an embodiment of the present inventioa
  • Fig. 6 is a diagram of the detailed structure of the focus shaping unit shown in Fig. 5.
  • Fig. 7 is a diagram illustrating the sublimation of by-products when a wafer cutting method according to an embodiment of the present invention is used.
  • Fig. 8 is a diagram illustrating the relationship between the transfer speed and the cutting depth of a wafer when the wafer is cut by a laser.
  • Fig. 9 is a diagram illustrating the relationship between the transfer speed, the cutting depth, and the cutting angle of a wafer when the wafer is cut by a laser.
  • Fig. 10 is a diagram illustrating the relationship between the focal position of a laser beam, the cutting depth of a wafer, and the cutting width of the wafer when the wafer is cut by a laser.
  • Figs. 11 to 13 are diagrams illustrating the relationship between the transfer speed of a wafer and the cutting depth of the wafer according to the length of a laser beam when the wafer is cut by a laser according to an embodiment of the present invention.
  • Figs. 14 to 18F are diagrams illustrating the relationship between the transfer speed of a wafer and the cutting depth of the wafer according to the length of a laser beam when the wafer is cut by a laser according to another embodiment of the present invention.
  • Figs. 19 to 21 are diagrams illustrating the relationship between the transfer speed and the cutting depth of a wafer according to the cutting direction when the wafer is cut by a laser.
  • Figs.22 to 25 are diagrams of a comparison between the removal efficiency of by-products by the wafer cutting method according to the embodiment of the present invention and the removal efficiency of by-products by the wafer cutting method according to the related ait
  • Fig. 5 is a diagram of an apparatus for manufacturing a wafer using a laser.
  • the apparatus for manufacturing a wafer using a laser includes a control unit 100 that controls the overall operation of the apparatus for manufacturing a wafer using a laser, a light source 200 that emits a laser beam used for processing an object, and a focus shaping unit 300 that changes the shape of the laser beam emitted from the light source 200 into an elliptical shape.
  • the manufacturing apparatus may further include a cleaning unit 400 that removes by-products generated when the object is processed.
  • the cleaning unit 400 discharges helium gas to remove by-products generated when a wafer is cut
  • the focus shaping unit 300 may include a first cylindrical lens 310 and a second cylindrical lens 320.
  • the first cylindrical lens 310 is a long focus lens and changes the beam emitted from the light source 200 into sheet light
  • the second cylindrical lens 320 is a short focus lens and is provided at a predetermined distance from the first cylindrical lens 320 such that the transmission direction of light is orthogonal to that of the first cylindrical lens 310.
  • the second cylindrical lens 320 changes the sheet light passing through the first cylindrical lens 310 into elliptical light 500.
  • an elliptical laser beam having a frequency of 30 to 100 kHz be radiated onto the wafer 12, and the ratio of the length of the minor axis and the length of the major axis of elliptical laser beam be in the range of l:4 to 1:12.
  • the length of the major axis of the elliptical beam be in the range of 100 to 150 ⁇ m and the length of the minor axis thereof be in the range of 5 to 35 ⁇ m.
  • the length of the major axis of the elliptical laser beam becomes proportionately longer.
  • the intensity of the elliptical laser beam becomes lower, the length of the major axis of the elliptical laser beam becomes proportionately shorter. That is, it is necessary to change the size of a focal plane according to the intensity of the laser beam, thereby maintaining the intensity of a focused beam.
  • the focus shaping device is composed of cylindrical lenses, but the invention is not limited thereto.
  • the focus shaping device may be composed of any element capable of changing the shape of a laser beam into an elliptical shape.
  • a wafer is loaded on a stage 10, and the stage 10 is put on a transfer apparatus (not shown).
  • the transfer apparatus moves according to the path previously programmed by an operator.
  • a laser beam is emitted from the light source 200, the focal plane of the laser beam is changed into an elliptical shape by the focus shaping unit 300, and the elliptical laser beam is radiated onto the surface of the wafer 12.
  • the major axis of the elliptical laser beam should be aligned with the cutting direction of the wafer 12.
  • the cleaning unit 400 preferably discharges a cleaning liquid or a cleaning gas, or sucks by-products, thereby removing by-products generated when the wafer is cut.
  • a cut plane of the wafer 12 has a sufficiently large slope although the wafer is not transferred at high speed. As an angle between the cut plane and the horizontal axis of the wafer becomes smaller, the by-products generated when the wafer is cut are discharged to the outside easier, without adhering to the cut plane.
  • Fig. 7 is a diagram illustrating the sublimation of a by-product when a wafer cutting method according to an embodiment of the present invention is used.
  • the wafer 12 is transferred by the transfer apparatus and is cut in a direction opposite to the transfer direction. Then, a laser beam is radiated through the focus shaping unit 300 onto the surface of the wafer to cut the wafer in the oblique direction. That is, the cut plane of the wafer is obliquely inclined in the direction in which the wafer is cut In this case, the length of the cut plane is the length Dl of the major axis of the laser beam, and the width of the cut plane is the length D2 of the minor axis of the laser beam.
  • the elliptical laser beam is obliquely radiated onto the wafer, and by-products A generated from the cut plane are all discharged to the outside without remaining on the bottom of the cut portion.
  • the size of the elliptical laser beam radiated onto the wafer 12 is preferably set such that the ratio of the length of the minor axis and the length of the major axis of the elliptical laser beam is in the range of 1:4 to 1:12. However, the ratio will vary according to the overall depth of the wafer 12.
  • Fig. 8 is a diagram illustrating the relationship between the transfer speed of a wafer and the cutting depth thereof when the wafer is cut
  • Fig. 8 shows the relationship between the transfer speed of a wafer and the cutting depth thereof when a 6W laser beam having a major axis length of 125 ⁇ m is radiated onto the wafer to cut the wafer in the vertical direction with a focal position of 0, and the laser beam has a variable frequency 40 kHz or 30 kHz.
  • the frequency of the laser beam is 40 kHz
  • the cutting depth is larger than that when the frequency of the laser beam is 30 kHz in the same condition and at the same transfer speed.
  • Fig. 9 is a diagram illustrating the relationship between the transfer speed, the cutting depth, and the cutting angle of a wafer when a laser is used to cut the wafer.
  • Fig. 9 shows the relationship between the transfer speed, the cutting depth, and the cutting angle of a wafer when a 6 W laser beam having a frequency of 40 kHz, and a major axis length of 125 ⁇ m is radiated onto the wafer to cut the wafer in the horizontal direction with a focal position of 0.
  • Fig. 9 shows that as the transfer speed of the wafer becomes higher, the angle between the cut plane and the horizontal axis becomes smaller. That is, when a laser provided at a fixed position radiates a laser beam onto a moving wafer to cut the wafer, the higher the transfer speed of the wafer becomes, the smaller the angle between the laser beam and the wafer becomes.
  • FIG. 10 is a diagram illustrating the relationship between the focal position of a laser beam, the cutting depth of a wafer, and the cutting width thereof when a laser is used to cut the wafer.
  • Fig. 10 shows the relationship between the focal position of a laser beam, the cutting depth of a wafer, and the cutting width thereof when a 6W laser beam having a frequency of 40 kHz, and a major axis length of 125 ⁇ m is radiated onto a wafer moving in the horizontal direction at a speed of 80 mm/s.
  • the cutting depth characteristic becomes better.
  • the focal position of a laser beam is further from the surface of the wafer upward, the cutting depth characteristic is lowered.
  • the focal position of the laser beam is closer to the bottom of the wafer from the surface of the wafer, the cutting depth of the wafer becomes larger.
  • the cutting depth of the wafer becomes larger. That is, as the focal position of the laser beam becomes closer to the surface of the wafer, the cutting depth of the wafer becomes smaller, resulting in a good cutting characteristic.
  • Example 1 relationship between cutting depth and transfer speed of wafer according to variation in length of major axis
  • Figs. 11 to 13 are diagrams illustrating an example of the relationship between the transfer speed and the cutting depth of a wafer according to a variation in the length of the major axis of a laser beam used to cut the wafer, in which the major axis of the laser beam has a relatively small length.
  • Fig. 11 is a graph illustrating the relationship between the transfer speed and the cutting depth of a wafer when a 6W laser beam having a frequency of 40 kHz is radiated onto the surface of the wafer, such that the laser beam is focused on the surface, to cut the wafer in the vertical direction, while changing the length of the major axis of the laser beam to 45 ⁇ m, 70 ⁇ m, 100 ⁇ m, 130 ⁇ m, and
  • Figs. 12A to 12E show SEM photographs indicating the state of a cut plane and the cutting depth corresponding to the length of each major axis when the wafer is transferred at a speed Pl shown in Fig. 11.
  • Fig. 12A shows that, when the length of the major axis is 43.8 ⁇ m, a wafer having a total thickness of 125 ⁇ m is cut at a depth of 27.2 ⁇ m, and a large number of by-products are condensed and recast on the cut plane.
  • Fig. 12B shows that, when the length of the major axis is 70 ⁇ m, a wafer having a total thickness of 125 ⁇ m is cut at a depth of 48.7 ⁇ m, and a smaller number of by-products are condensed or recast on the cut plane, as compared to when the length of the major axis is 43.8 ⁇ m.
  • Fig. 12C shows that, when the length of the major axis is 100 ⁇ m, a wafer is cut at a depth of 60.9 ⁇ m and the removal rate of by-products is further improved than that when the length of the major axis is 70 ⁇ m.
  • Fig. 12D shows that, when the length of the major axis is 130 ⁇ m, a wafer having a total thickness of 125 ⁇ m is cut at a depth of 75.4 ⁇ m, and a larger number of by-products are removed, as compared to when the length of the major axis is 100 ⁇ m.
  • Fig. 12E shows that, when the length of the major axis is 152 ⁇ m, a wafer having a total thickness of 125 ⁇ m is cut at a depth of73.6 ⁇ m, and a larger number ofby-products are deposited on the cut plane, as compared to when the length of the major axis is 130 ⁇ m.
  • Figs. 12A to 12E show that, when the length of the major axis is 130 ⁇ m, a good cutting characteristic is obtained.
  • Figs. 13 A to 13D are diagrams illustrating the relationship between the cutting characteristic and the transfer speed of a wafer when the length of the major axis is 130 ⁇ m.
  • Fig. 13 A is an SEM photograph showing that a wafer having a total thickness of 125 ⁇ m is cut at a depth of 125 ⁇ m when the wafer is transferred at a speed of 50 mm/s. That is, in this case, the wafer can be cut just once, but a large number ofby-products are deposited as shown in the SEM photograph of Fig. 13 A, so that the cut plane is contaminated.
  • Fig. 13B is an SEM photograph showing that a wafer having a total thickness of 125 ⁇ m is cut at a depth of 75.4 ⁇ m when the wafer is transferred at a speed of 75 mm/s. As can be seen from Fig.
  • Fig. 13C is an SEM photograph showing that a wafer having a total thickness of 125 ⁇ m is cut at a depth of 49.3 ⁇ m when the wafer is transferred at a speed of 100 mm/s.
  • the cutting depth of the wafer is smaller than that shown in Fig. 13B, but the amount of by-products recast on the cut plane is remarkably reduced, as compared to that shown in Fig. 13B.
  • Fig. 13D is an SEM photograph showing that a wafer having a total thickness of 125 ⁇ m is cut at a depth of 24.2 ⁇ m when the wafer is transferred at a speed of 200 mm/s.
  • the high transfer speed of the wafer causes the wafer to be cut at a very small depth, and a large number of by-products are deposited on the cut plane.
  • Figs. 11 to 13D show that the length of the major axis of a laser beam used to cut a wafer is preferably about 130 ⁇ m and the transfer speed of the wafer is preferably about 100 mm/s.
  • Example 2 relationship between cutting depth and transfer speed of wafer according to variation in length of major axis
  • Figs. 14 to 18 are diagrams illustrating another example of the relationship between the transfer speed and the cutting depth of a wafer according to a variation in the length of the major axis of a laser beam when a laser is used to cut the wafer, in which the major axis of the laser beam has a relatively large length.
  • Fig. 14 is a graph illustrating the relationship between the transfer speed and the cutting depth of a wafer when a 5.8W laser beam having a frequency of 40 kHz is radiated onto the surface of the wafer, such that the laser beam is focused on the surface, to cut the wafer in the horizontal direction, while changing the length of the major axis of the laser beam to 127.2 ⁇ m, 144.8 ⁇ m, 180.2 ⁇ m, and 190.2 ⁇ m.
  • the graph shown in Fig. 14 was obtained by experiments. As can be seen from Fig. 14, when the transfer speed of the wafer is low, the shorter the length of the major axis becomes, and the larger the cutting depth of the wafer becomes. However, the relationship between the length of the major axis and the cutting depth of the wafer varies according to tiie transfer speed of the wafer.
  • Figs. 15Ato 15D are diagrams illustrating the state ofacut plane of a wafer at a point P2 of Fig. 14.
  • Fig. 15A is a diagram illustrating the state of a cut plane of a wafer at the point P2 when the length of the major axis is 127.2 ⁇ m.
  • Fig. 15B is a diagram illustrating the state of a cut plane of a wafer at the point P2 when the length of the major axis is 144.8 ⁇ m.
  • Fig. 15C is a diagram illustrating the state of a cut plane of a wafer at the point P2 when the length of the major axis is 180.2 ⁇ m.
  • Fig. 15D is a diagram illustrating the state of a cut plane of a wafer at the point P2 when the length of the major axis is 190.2 ⁇ m.
  • Figs. 16Ato 16D are diagrams illustrating the state ofacut plane ofa wafer at a point P3 of Fig. 14.
  • Fig. 16A is a diagram illustrating the state ofa cut plane ofa wafer at the point P3 when the length of the major axis is 127.2 ⁇ m.
  • Fig. 16B is a diagram illustrating the state ofa cut plane ofa wafer at the point P3 when the length of the major axis is 144.8 ⁇ m.
  • Fig. 16C is a diagram illustrating the state ofa cut plane ofa wafer at the point P3 when the length of the major axis is 180.2 ⁇ m.
  • Fig. 16D is a diagram illustrating the state of a cut plane of a wafer at the point P3 when the length of the major axis is 190.2 ⁇ m.
  • Figs. 17A to 17D are diagrams illustrating the state of a cut plane of a wafer at a point P4 of Fig. 14.
  • Fig. 17A is a diagram illustrating the state of a cut plane of a wafer at the point P4 when the length of the major axis is 127.2 ⁇ m.
  • Fig. 17B is a diagram illustrating the state of a cut plane of a wafer at the point P4 when the length of the major axis is 144.8 ⁇ m.
  • Fig. 17C is a diagram illustrating the state of a cut plane of a wafer at the point P4 when the length of the major axis is 180.2 ⁇ m.
  • Fig. ITD is a diagram illustrating the state of a cut plane of a wafer at the point P4 when the length of the major axis is 190.2 ⁇ m.
  • Figs. 17 A to 17D when the transfer speed of the wafer is 90 mm/s and the lengths of the major axis are 127.2 ⁇ m and 144.8 ⁇ m, a good characteristic is obtained with regard to contaminatioa In addition, when the length of the major axis is 144.8 ⁇ m, the wafer is cut at a large depth.
  • Figs. 15 to 17 when the length of the major axis is 144.8 ⁇ m, a smooth cut plane and a good cutting depth characteristic are obtained.
  • Figs. 18A to 18F are SEM photographs showing the relationship between the state of a cut plane and the transfer speed of a wafer when the length of the major axis of a laser beam is 144.8 ⁇ m.
  • Fig. 18 A is an SEM photograph illustrating the state of a cut plane when the transfer speed of the wafer is 50 mm/s.
  • Fig. 18B is an SEM photograph illustrating the state of a cut plane when the transfer speed of the wafer is 60 mm/s.
  • Fig. 18C is an SEM photograph illustrating the state of a cut plane when the transfer speed of the wafer is 70 mm/s.
  • Fig. 18D is an SEM photograph illustrating the state of a cut plane when the transfer speed of the wafer is 80 mm/s.
  • Fig. 18E is an SEM photograph illustrating the state of a cut plane when the transfer speed of the wafer is 90 mm/s.
  • Fig. 18F is an SEM photograph illustrating the state of a cut plane when the transfer speed of the wafer is 100 mm/s.
  • the state of the cut plane of the wafer is better at the same transfer speed than that when the length of the major axis is 144.8 ⁇ m.
  • FIGs. 19 to 21 are diagrams illustrating the relationship between the transfer speed and the cutting depth of a wafer according to a cutting direction when the wafer is cut with a laser.
  • Fig. 19 is a graph illustrating the cutting depth of a wafer when a 6 W laser radiates a laser beam having a frequency of 40 kHz, and a major axis length of 125 ⁇ m onto the wafer, such that the laser beam is focused on the surface of the wafer, to cut the wafer in the horizontal direction and the vertical direction.
  • Figs. 2OA to 2OC are SEM photographs showing the relationship between the state of a cut plane and the transfer speed of a wafer when the wafer is cut in the vertical direction. More specifically, Fig. 2OA is an SEM photograph illustrating the state of a cut plane when the transfer speed of the wafer is 50 mm/s. Fig. 2OB is an SEM photograph illustrating the state of a cut plane when the transfer speed of the wafer is 70 mm/s. Fig. 2OC is an SEM photograph illustrating the state of a cut plane when the transfer speed of the wafer is 90 mm/s.
  • Figs.21 A to 21C are SEM photographs showing the relationship between the state of a cut plane and the transfer speed of a wafer when the wafer is cut in the horizontal direction. More specifically, Fig. 21 A is an SEM photograph illustrating the state of a cut plane when the transfer speed of the wafer is 50 mm/s. Fig. 21B is an SEM photograph illustrating the state of a cut plane when the transfer speed of the wafer is 70 mm/s. Fig. 21C is an SEM photograph illustrating the state of a cut plane when the transfer speed of the wafer is 90 mm/s.
  • Figs. 22 to 25 are diagrams of a comparison between the removal of by-products from a wafer cutting method according to the present invention and the removal of by-products from a wafer cutting method according to the related art.
  • Fig. 22 is a diagram illustrating the relationship between the transfer speed and the ablation depth of a wafer when a wafer cutting method according to the present invention is applied, in which a 6W laser beam having a fiequency of 40 kHz, a cutting width of 20 ⁇ m, and a major axis length of 125 ⁇ m is used, and a wafer cutting method according to the related art is applied in which a laser beam having a circular shape, not an elliptical shape, is directly used.
  • the ablation depth of the wafer is larger than that when the wafer cutting method according to the related art is applied.
  • Figs.23 A and 23B are SEM photographs illustrating a cut plane of a wafer cut by the wafer cutting method according to the present invention and a cut plane of a wafer cut by the wafer cutting method according to the related art when the transfer speed of the wafer is 50 mm/s, respectively.
  • Figs. 23A and 23B when the wafer cutting method according to the present invention is applied (Fig. 23A), the amount of by-products adhered to the cut plane of the wafer is smaller than that when the wafer cutting method according to the related art is applied.
  • Figs.24A and 24B are SEM photographs illustrating a cut plane of a wafer cut by the wafer cutting method according to the present invention and a cut plane of a wafer cut by the wafer cutting method according to the related art when the transfer speed of the wafer is 75 mm/s, respectively.
  • Figs. 24A and 24B when the wafer cutting method according to the present invention is applied (Fig. 24A), the amount of by-products adhered to the cut plane of the wafer is smaller than that when the wafer cutting method according to the related art is applied.
  • the higher the transfer speed of the wafer becomes the smaller the amount of by-products becomes.
  • Figs.25A and 25B are SEM photographs illustrating a cut plane of a wafer cut by the wafer cutting method according to the present invention and a cut plane of a wafer cut by the wafer cutting method according to the related art when the transfer speed of the wafer is 100 mm/s, respectively.
  • Figs. 25A and 25B when the wafer cutting method according to the present invention is applied (Fig. 25A), less by-products are adhered to the cut plane of the wafer, as compared to when the wafer cutting method according to the related art is applied.
  • Fig. 24A when the transfer speed of the wafer is 100 mm/s, the state of the cut plane of the wafer is very good.
  • a laser is used to cut or groove an object, such as a wafer, metal, or plastic, and a laser beam having an elliptical shape is radiated onto the object to process the object, which causes by-products generated when the object is processed to be discharged to the outside. Therefore, it is possible to prevent the by-products from being recast on the object and thus to effectively process the object. As a result, it is possible to improve the reliability of a semiconductor chip in the subsequent processes.

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Laser Beam Processing (AREA)
  • Dicing (AREA)

Abstract

La présente invention a trait à un appareil pour la fabrication d'un objet utilisant un laser comportant: une source lumineuse émettant un faisceau laser; et une unité de mise en forme du foyer convertissant le faisceau laser émis en un faisceau laser elliptique et assurant le rayonnement du faisceau laser elliptique sur la surface de l'objet.
PCT/KR2005/003231 2005-09-29 2005-09-29 Appareil de fabrication utilisant un laser WO2007037564A1 (fr)

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PCT/KR2005/003231 WO2007037564A1 (fr) 2005-09-29 2005-09-29 Appareil de fabrication utilisant un laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/KR2005/003231 WO2007037564A1 (fr) 2005-09-29 2005-09-29 Appareil de fabrication utilisant un laser

Publications (1)

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WO2007037564A1 true WO2007037564A1 (fr) 2007-04-05

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015090895A (ja) * 2013-11-05 2015-05-11 株式会社ディスコ 切削装置及び切削方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6322958B1 (en) * 1998-11-26 2001-11-27 Sumitomo Heavy Industries Ltd. Laser marking method and apparatus, and marked member
US6492617B2 (en) * 2000-04-10 2002-12-10 Tanaka Engineering Works, Ltd. Piercing device for laser cutter
KR20050097168A (ko) * 2004-03-31 2005-10-07 주식회사 이오테크닉스 레이저 가공 장치

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6322958B1 (en) * 1998-11-26 2001-11-27 Sumitomo Heavy Industries Ltd. Laser marking method and apparatus, and marked member
US6492617B2 (en) * 2000-04-10 2002-12-10 Tanaka Engineering Works, Ltd. Piercing device for laser cutter
KR20050097168A (ko) * 2004-03-31 2005-10-07 주식회사 이오테크닉스 레이저 가공 장치

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015090895A (ja) * 2013-11-05 2015-05-11 株式会社ディスコ 切削装置及び切削方法

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