WO2007034834A1 - Nitride semiconductor light-emitting device and method for manufacturing same - Google Patents

Abstract

Disclosed is a semiconductor device which is improved in outcoupling efficiency since reflection by the supporting substrate is reduced. This semiconductor device is also excellent in strength characteristics of a supporting substrate. Also disclosed is a method for manufacturing such a semiconductor device. Specifically disclosed is a nitride semiconductor device wherein at least an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, a metal film layer and a plated metal plate are sequentially arranged in this order on a substrate. This nitride semiconductor device is characterized in that the metal film layer and the plated metal plate are partially formed on the p-type semiconductor layer. Also disclosed is a nitride semiconductor device having a structure wherein at least an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, a metal film layer and a plated metal plate are sequentially arranged in this order, which device is characterized in that the metal film layer and the plated metal plate are partially formed on the p-type semiconductor layer and a light-transmitting material layer is formed on the p-type semiconductor layer in a region where the metal film layer and the plated metal plate are not formed.

Description

 Specification

 Nitride-based semiconductor light-emitting device and manufacturing method thereof

 Technical field

 [0001] The present invention relates to a nitride-based semiconductor light-emitting device and a method for manufacturing the same.

 This application is based on Japanese Patent Application No. 2005-272424 filed in Japan on September 20, 2005, and Japanese Patent Application No. 2005-272574 filed in Japan on September 20, 2005. The contents are used here.

 Background art

 In recent years, GaN-based compound semiconductor materials have attracted attention as semiconductor materials for short-wavelength light emitting devices. GaN-based compound semiconductors include sapphire single crystals, various oxide substrates and III-V compounds, and metal organic vapor phase chemical reaction method (MO CVD method) and molecular beam epitaxy method (MBE). Method).

 A sapphire single crystal substrate can form a good nitride semiconductor on it by forming a buffer layer such as A1N or AlGaN that has a lattice constant more than 10% different from that of GaN. Widely used. When a sapphire single crystal substrate is used, an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer are stacked in this order. Since the sapphire substrate is an insulator, the element structure generally includes a positive electrode formed on the p-type semiconductor layer and a negative electrode formed on the n-type semiconductor layer. There are two types: a face-up method that uses a transparent electrode such as ITO as the positive electrode to extract light from the p-type semiconductor side, and a flip-chip method that uses a highly reflective film such as Ag as the positive electrode to extract light from the sapphire substrate. is there.

 [0003] As described above, the sapphire single crystal substrate has several problems because it is a generally used force insulator.

 First, since the n-type semiconductor layer is exposed by removing the light-emitting layer by etching or the like to form the negative electrode, the area of the light-emitting layer is reduced only by the negative electrode portion, and the output is reduced accordingly.

Second, since the positive electrode and the negative electrode are on the same plane, the current flow is in the horizontal direction, creating a high current density locally, and the element generates heat. Third, since the thermal conductivity of the sapphire substrate is low, the generated heat does not diffuse and the temperature of the device rises.

 In order to solve the above problems, a conductive substrate is bonded to an element in which an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer are stacked in this order on a sapphire single crystal substrate, and then the sapphire single crystal substrate A method is disclosed in which the positive electrode and the negative electrode are arranged one above the other (for example, Patent Document 1).

 In addition, a method of manufacturing by a method in which a conductive substrate is not bonded is disclosed (for example, Patent Document 2).

 [0005] Methods for bonding conductive substrates include a method of using a low-melting-point metal compound such as AuSn as an adhesive, activated bonding in which the bonding surface is activated and bonded using argon plasma or the like in a vacuum, etc. There is a way. In these methods, the adhesion surface is required to be extremely smooth, and when there is a foreign substance such as a particle, the portion floats, and there is a possibility that the adhesion cannot be performed satisfactorily. It was difficult.

 [0006] When a substrate is manufactured by plating, it is advantageous in that it is hardly affected by foreign matter. Since the p-type semiconductor side is covered by the plating, the light extraction efficiency is reduced. The light extraction efficiency is improved. For this reason, a method of depositing Ag or the like having high reflectivity on the ohmic contact layer is generally used before the plating process, but in this method, most of the reflected light must pass through the light emitting layer. Therefore, light absorption in the light emitting layer becomes a problem. In order to prevent generation of reflected light at this time as much as possible, a semiconductor element using a transparent substrate as a support substrate has been proposed (for example, Patent Document 3).

[0007] However, when a transparent substrate is used as the support substrate, for example, in SOG (spin-on-glass), a thickness of about 5 μm is the limit of the thick film, so that a substrate with sufficient strength cannot be produced. There was a problem.

 Patent Document 1: Japanese Patent No. 3511970

 Patent Document 2: JP 2004-47704 A

Patent Document 3: Japanese Patent Laid-Open No. 2003-309286 Disclosure of the invention

 Problems to be solved by the invention

 The present invention has been made in view of the above circumstances, and has excellent strength characteristics of a support substrate, and a semiconductor device with improved light extraction efficiency with less reflected light from the support substrate and a method for manufacturing the same The purpose is to provide.

 Means for solving the problem

 As a result of diligent efforts to solve the above problems, the present inventors have at least an n-type semiconductor layer, a light emitting layer, a P-type semiconductor layer, a metal film layer, and a metal plate laminated in this order. In the nitride-based semiconductor light-emitting device, the structure is partially formed on the metal film layer and the metallic metal plate-type semiconductor layer, thereby providing excellent substrate strength and low reflected light, that is, light extraction efficiency. However, the inventors have found that it is possible to produce a good device, and have completed the present invention. Furthermore, the effect of the present invention is further exhibited by forming the metal film layer and the metal sheet in a lattice shape.

 That is, the present invention relates to the following.

 [0010] (1) In a nitride-based semiconductor light-emitting device in which at least an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, a metal film layer, and a metal plating plate are laminated on a substrate, the metal film layer, A nitride-based semiconductor light-emitting device, wherein a metallic metal plate is partially formed on the P-type semiconductor layer.

 (2) In a nitride-based semiconductor light-emitting device in which at least an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, a metal film layer, and a metal metal plate are laminated on a substrate, the metal film layer and the metal metal plate The nitride-based semiconductor light-emitting device according to (1), wherein the nitride-based semiconductor light-emitting device is formed on the P-type semiconductor layer so as to intersect in plan view.

 (3) The area of the metal film layer and the metal plate formed on the p-type semiconductor layer is in the range of 10 to 90% in terms of the area ratio with respect to the upper surface of the P-type semiconductor layer. The nitride-based semiconductor light-emitting device according to (1) or (2).

(4) The n-type semiconductor layer, the light-emitting layer, and the p-type semiconductor layer formed on the substrate are divided into element units in advance, and any one of (1) to (3) A nitride semiconductor light emitting device according to claim 1. (5) The nitride-based semiconductor light-emitting device according to any one of (1) to (4), wherein a transparent electrode is provided on the p-type semiconductor layer! /.

 (6) The nitride-based semiconductor light-emitting device according to any one of (1) to (5), wherein the metal film layer includes an ohmic contact layer.

 (7) Any of (1) to (6), wherein the ohmic contact layer is made of a single metal of Pt, Ru, Os, Rh, Ir, Pd, Ag, or an alloy force of Z or an alloy thereof. A nitride semiconductor light-emitting device according to claim 1.

 (8) The ohmic contact layer has a thickness of 0. Inn! The nitride-based semiconductor light-emitting device according to any one of (1) to (7), which is in a range of ˜30 nm.

 (9) The nitride-based semiconductor light-emitting device according to any one of (1) to (8), wherein a thickness of the metal plating plate is in a range of 10 μm to 200 μm.

 (10) The nitride-based semiconductor light-emitting element according to any one of (1) to (9), wherein the metal sheet strength is NiP alloy, Cu, or Cu alloy.

 (11) A nitride-based semiconductor light-emitting device according to any one of (1) to (10), wherein a metal adhesion layer is formed between the metal film layer and the metal metal plate.

 (12) The nitride system according to (11), wherein the plating adhesion layer contains 50 wt% or more of the same composition as the main component occupying 50 wt% or more of the plating forming the plating metal plate Semiconductor light emitting device.

 (13) The nitride-based semiconductor light-emitting device according to (11) or (12), wherein the adhesion adhesion layer strength is NiP alloy or Cu alloy.

(14) In the method for manufacturing a nitride-based semiconductor light-emitting device including a stacking step of stacking at least an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, a metal film layer, and a metallic metal plate on a substrate, The method for producing a nitride-based semiconductor light-emitting device, wherein the metal film layer and the metal plate are partially formed on the p-type semiconductor layer.

(15) The nitride-based semiconductor light-emitting device according to (14), wherein, in the stacking step, the metal film layer and the metal plate are individually formed in a planar view in a crossed state. Production method.

(16) In the stacking step, the n-type semiconductor layer is attached to the substrate via a notch layer. By removing the substrate and the buffer layer after completion of the stacking step.

The method for producing a nitride-based semiconductor light-emitting device according to (14) or (15), wherein the n-type semiconductor layer is exposed.

 (17) The method for manufacturing a nitride-based semiconductor light-emitting element according to (16), wherein the substrate is removed by a laser.

 (18) The nitride-based semiconductor light-emitting device according to any one of (14) to (17), characterized in that after forming the metal plate, heat treatment is performed at a temperature of 100 ° C to 300 ° C. Production method.

 Further, as a result of diligent efforts to solve the above problems, the present inventors have found that at least an n-type semiconductor layer, a light emitting layer, a p-type semiconductor layer, a metal film layer, and a metal plate are laminated in this order. In the nitride-based semiconductor light-emitting device, the metal film layer and the metal plating plate are partially formed on the P-type semiconductor layer, and the metal film layer and the metal film layer are formed on the p-type semiconductor layer. By adopting a structure in which a light-transmitting substance layer is formed in a portion where no metal plate is formed, an element having excellent substrate strength and low reflected light, that is, high light extraction efficiency can be manufactured. As a result, the present invention was completed. Further, the metal film layer and the plated metal plate are formed on the P-type semiconductor layer so as to intersect in plan view, and the metal film layer and the plated metal plate are not formed on the p-type semiconductor layer. By forming the translucent material layer in the portion, the effect of the present invention is further exhibited.

 That is, the second aspect of the present invention relates to the following.

(1) In a nitride-based semiconductor light-emitting device in which at least an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, a metal film layer, and a metal plating plate are stacked in this order on a substrate, the metal film layer And the plating metal plate is partially formed on the p-type semiconductor layer, and the metal film layer and the plating metal plate are formed on the p-type semiconductor layer. A nitride-based semiconductor light-emitting device, wherein a light-transmitting material layer is formed on the substrate. (2) The metal film layer and the metal plate that are formed on the p-type semiconductor layer are provided in an intersecting state in plan view, and the metal film layer and the metal plate are arranged on the p-type semiconductor layer. The nitride-based semiconductor light-emitting device according to (1), wherein the light-transmitting material layer is provided on a small portion where a metal plate is formed. (3) The translucent material layer is laminated on the p-type semiconductor layer, and the translucent material layer is partially surrounded by at least the metal film layer and a metal plate. The nitride semiconductor light emitting device according to (1) or (2).

 (4) The translucent material layer is laminated on the p-type semiconductor layer via a transparent electrode, and the translucent material layer is at least partially surrounded by the metal film layer and the metal plate. The nitride-based semiconductor light-emitting device according to (1) or (2), wherein

 (5) The nitride-based material according to any one of (1) to (4), wherein the light-transmitting material layer is made of any one of a light-transmitting resin, a silica-based material, and a titania-based material. Semiconductor light emitting device.

(6) The nitride-based semiconductor light-emitting element according to any one of (1) to (5), wherein a refractive index of the translucent material layer is in a range of 1.4 to 2.6.

 (7) The nitride-based semiconductor light-emitting element according to any one of (1) to (6), wherein the translucent material layer has a thickness in a range of 10 m to 200 m.

 (8) The nitridation according to any one of (1) to (7), wherein an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer formed on the substrate are previously divided into element units. Physical semiconductor light emitting device.

 (9) The nitride-based semiconductor light-emitting device according to any one of (1) to (8), wherein the metal film layer includes an ohmic contact layer.

 (10) Any one of (1) to (9), wherein the ohmic contact layer is made of a single metal of Pt, Ru, Os, Rh, Ir, Pd, Ag, or Z or an alloying force thereof. A nitride semiconductor light-emitting device according to claim 1.

 (11) The film thickness of the ohmic contact layer is 0. Inn! The nitride-based semiconductor light-emitting device according to any one of (1) to (10), wherein the nitride-based semiconductor light-emitting device is in a range of ˜30 nm.

 (12) The nitride-based semiconductor light-emitting element according to any one of (1) to (11), wherein a thickness of the metal plating plate is in a range of 10 m to 200 m.

 (13) The nitride-based semiconductor light-emitting element according to any one of (1) to (12), wherein the metal plating strength is NiP alloy, Cu, or Cu alloy.

(14) A nitride-based semiconductor light-emitting device according to any one of (1) to (13), wherein a metal adhesion layer is formed between the metal film layer and the metal metal plate. (15) The nitride system according to (14), wherein the plating adhesion layer contains 50 wt% or more of the same composition as the main component occupying 50 wt% or more of the plating forming the plating metal plate Semiconductor light emitting device.

 (16) The nitride-based semiconductor light-emitting element according to (14) or (15), wherein the adhesion adhesion layer has NiP alloy power.

 (17) In the method for manufacturing a nitride-based semiconductor light-emitting element including a stacking step of stacking at least an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, a metal film layer, and a metal alloy plate on a substrate, In the stacking step, the metal film layer and the plating metal plate are partially formed on the p-type semiconductor layer, and the metal film layer and the plating metal plate are formed on the p-type semiconductor layer. A method for producing a nitride-based semiconductor light-emitting device, comprising: forming a light-transmitting material layer on the inner portion.

 (18) The nitride-based semiconductor light-emitting device according to (17), wherein, in the stacking step, the metal film layer and the metal plate are individually formed in a cross-sectional shape in a planar view. Production method.

 (19) The stacking step is performed by attaching the n-type semiconductor layer on a substrate via a nofer layer, and after the stacking step is completed, the substrate and the buffer layer are removed, thereby removing the n-type semiconductor layer. The method for producing a nitride-based semiconductor light-emitting device according to (17) or (18), wherein the layer is exposed.

 (20) The method for producing a nitride-based semiconductor light-emitting device according to (19), wherein the substrate is removed by a laser.

 (21) The nitride-based semiconductor light-emitting device according to any one of (17) to (20), characterized in that after forming the metal plate, heat treatment is performed at a temperature of 100 ° C to 300 ° C. Production method.

According to the nitride-based semiconductor light-emitting device of the present invention, in the structure in which at least an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, a metal film layer, and a metal plate are laminated in this order, the metal film layer , And metal plate force The structure is partially formed on the p-type semiconductor layer. As a result, it is possible to obtain an element having excellent substrate strength and low reflected light, that is, good light extraction efficiency. In particular, the effect of the present invention can be further exerted by forming the metal film layer and the metallic metal plate in a lattice shape. [0016] Further, according to the nitride-based semiconductor light-emitting device of the present invention, in a structure in which at least an n-type semiconductor layer, a light-emitting layer, a P-type semiconductor layer, a metal film layer, and a metal plate are stacked in this order, The metal film layer and the metal plate are partially formed on the P-type semiconductor layer, and the metal film layer and the metal plate are formed on the p-type semiconductor layer. The light transmitting material layer is formed on the part.

 With the above configuration, the light emission output of the nitride-based semiconductor light-emitting device is improved. This is because the critical angle is increased by using a material having a high refractive index of 1.4 to 2.6 as the translucent material. This is because it is more totally reflected. Note that the upper limit is 2.6, because the refractive index of GaN is 2.6, so there is no need to increase it further. If you make it bigger. Translucent material force It becomes difficult to extract light.

 According to the present invention, a nitride-based semiconductor light-emitting device having excellent substrate strength and low reflected light, that is, high light extraction efficiency and high light emission output can be obtained by the above configuration.

 The nitride-based semiconductor light-emitting device of the present invention particularly has a metal film layer and a metal plate formed on the P-type semiconductor layer so as to intersect each other in plan view, and on the p-type semiconductor layer. The effect of the present invention is further exhibited by forming the translucent material layer in the portion where the metal film layer and the metal plate are formed.

 Brief Description of Drawings

 FIG. 1 is a view showing an example of a nitride-based compound semiconductor light-emitting device of the present invention, and is a schematic view showing a cross-sectional structure.

 FIG. 2 is a diagram for explaining a method for producing a nitride-based compound semiconductor light-emitting device of the present invention, and is a schematic diagram showing a cross-sectional structure.

 FIG. 3 is a plan view showing a state before division of the nitride-based compound semiconductor light-emitting device of the present invention.

 FIG. 4 is a plan view showing a state before division of the nitride-based compound semiconductor light-emitting device of the present invention.

FIG. 5 is a view showing an example of the nitride-based compound semiconductor light-emitting device of the present invention, and is a schematic view showing a cross-sectional structure. FIG. 6 is a diagram for explaining a method for producing a nitride-based compound semiconductor light-emitting device of the present invention, and is a schematic diagram showing a cross-sectional structure.

 FIG. 7 is a plan view showing a state before division of the nitride-based compound semiconductor light-emitting device of the present invention.

 FIG. 8 is a plan view showing a state before division of the nitride-based compound semiconductor light-emitting device of the present invention.

 FIG. 9 is a plan view showing a state before division of the nitride-based compound semiconductor light-emitting device of the present invention.

 Explanation of symbols

 [0018] 1 ... Nitride-based semiconductor light emitting device, 101, 201 ··· Sapphire substrate (substrate), 102, 202 ··· Buffer layer, 103, 203 ··· η-type semiconductor layer, 104, 204 ··· · Luminescent layer, 105, 205 ··· ρ type semiconductor layer, 106, 206 ··· Transparent electrode, 107, 207 ··· Omic contact layer, 108, 208 ··· Reflective layer, 1 09, 209 ··· Plating adhesion layer, 110, 210 ··· plating metal plate, 111 ··· positive electrode, 114, 214 ··· translucent material layer

 BEST MODE FOR CARRYING OUT THE INVENTION

Hereinafter, embodiments of the nitride-based semiconductor light-emitting device of the present invention will be described with reference to the drawings.

 However, the present invention is not limited to the following embodiments. For example, the components of these embodiments may be appropriately combined.

Embodiment (No. 1) FIGS. 1 to 4 are diagrams for explaining a nitride-based semiconductor light-emitting device of this embodiment. FIG. 1 shows a η-type semiconductor layer, a light-emitting layer, and a ρ-type semiconductor layer. FIG. 2 is a schematic cross-sectional view showing an example of the nitride-based semiconductor light-emitting device of the present invention in which an ohmic contact layer, a reflective layer, and a plating adhesion layer are formed thereon, and a plating metal plate is formed thereon. is there. FIG. 2 is a diagram for explaining an example of a method for manufacturing a nitride-based semiconductor light-emitting device. In this embodiment, before the upper and lower electrode arrangement type structure as shown in FIG. A nitride-based semiconductor layer is formed. The two-dot chain lines shown in FIGS. 1 and 2 indicate the ohmic contact layer, the reflective layer, the plating adhesion layer, the plating metal plate, and the positive electrode (positive electrode 111 in FIG. 1) formed in a crossing state in plan view. Show a part of 3 and 4 are plan views for explaining a method for manufacturing a nitride-based semiconductor light-emitting device, and the nitride-based semiconductor light-emitting device of the present invention is divided into device units along dicing lines DL1, DL2. can get.

[0021] The nitride-based semiconductor light-emitting device 1 of the present embodiment includes an n-type semiconductor layer 103, a light-emitting layer 104, a p-type semiconductor layer 105, a transparent electrode 106, an ohmic contact layer 107 (metal film layer), a reflective layer 108, A plating adhesion layer 109 and a plating metal plate 110 are laminated in this order (vertical direction in FIG. 1). In the nitride semiconductor light emitting device 1, the reflective layer 108 and the plating adhesion layer are formed on the transparent electrode 106. The layer 109 and the metal plating plate 110 are laminated in this order, and these layers are partially formed on the p-type semiconductor layer 105 so as to cross in a cross shape. That is, when viewed from the direction of the cross-sectional line A—A shown in FIG. 3, the ohmic contact layer 107, the reflective layer 108, and the adhesion adhesion layer in the horizontal width direction (left-right direction in FIG. 1) of the example shown in FIG. Each width force of 109 and metal plating plate 110 is formed to be narrower than the width of transparent electrode 106, for example, about 30%. In addition, the vertical width direction of each layer of the ohmic contact layer 107, the reflective layer 108, the adhesive adhesion layer 109, and the metallic metal plate 110 (the vertical direction in FIG. 1) is almost the same as the width of the transparent electrode 106. Is formed. In addition, when the directional force of the cross-sectional line BB shown in FIG. 3 is also seen, the horizontal width and vertical width of the ohmic contact layer 107, the reflective layer 108, the plating adhesion layer 109, and the plating metal plate 110 shown in FIG. The relationship is the same as described above.

 In the present embodiment, the negative electrode 113 is formed on the lower surface of the n-type semiconductor layer 103 via the transparent electrode 112, and the positive electrode 111 is formed on the upper surface of the metal plating plate 110. It is schematically configured.

Next, the procedure for producing the nitride-based semiconductor light-emitting device of the present invention will be described below using the examples shown in FIGS.

First, a buffer layer 202 is formed on a sapphire substrate (substrate) 201, and an n-type semiconductor layer 203, a light-emitting layer 204, and a p-type semiconductor layer 205 are stacked via the buffer layer 202 to form a nitride-based semiconductor layer. Form. A transparent electrode 206 is formed on the nitride-based semiconductor thus formed (that is, on the p-type semiconductor layer 205). These n-type semiconductor layer 203, light-emitting layer 204, p-type semiconductor layer 205, and transparent electrode 206 have the same width as shown in FIG. In addition, the vertical width is almost the same size. Next, on the transparent electrode 206, an ohmic contact layer 207 and a reflective layer 208 are laminated in this order. The ohmic contact layer 207 and the reflective layer 208 of this embodiment are partially formed on the transparent electrode 206 in a lattice pattern in plan view so as to intersect each element vertically and horizontally as in the example shown in FIG. Form. The pattern formation of the ohmic contact layer 207 and the reflective layer 208 is performed using a known photolithography technique or a lift-off technique described later by using a resist material.

 Then, the plating metal plate 210 is formed by applying plating. The metal plate 210 according to the present embodiment is formed by forming an insulating protective film on portions other than the ohmic contact layer 207 and the reflective layer 208 to be plated, or by performing a plating or a thick film resist material for plating. Using this, only the pattern of the ohmic contact layer 207 and the reflective layer 208 is measured by a known photolithography technique or lift-off technique. Before the plating process, it is preferable to form the plating adhesion layer 209 in order to improve the adhesion between the plating metal plate 210 and the reflective layer 208 (metal film layer). Further, the adhesion adhesion layer 209 may be omitted.

 Next, the sapphire substrate 201 is peeled off, and the buffer layer 202 is further removed. Next, a positive electrode 111 and a negative electrode 112 shown in FIG. 1 are formed by forming a positive electrode and a negative electrode. Then, by dividing the metal plate 210 along the dicing lines DL1 and DL2 as shown in FIG. 3, the nitride semiconductor light emitting device 1 shown in FIG. 1 can be obtained.

As shown in FIG. 1, the nitride-based semiconductor light-emitting device of this embodiment includes an ohmic contact layer 107, a reflective layer 108, and a mesh adhesion layer 109 that are stacked on a p-type semiconductor layer 105 via a transparent electrode 106. Each layer of the metal plating plate 110 is partially formed so as to cross the upper surface 105a of the p-type semiconductor layer 105 via the transparent electrode 106 in a cross shape. In addition, the area of the ohmic contact layer 107, the reflective layer 108, the plating adhesion layer 109, and the plating metal plate 110, that is, the area of the bottom 107a of the ohmic contact layer 107 is 10% of the area of the upper surface 105a of the p-type semiconductor layer 105. It is preferable that the area ratio is in a range of ˜90%. In the example shown in the sectional view of FIG. 1, as described above, the bottom 107a of the ohmic contact layer 107 is formed with respect to the upper surface 105a of the p-type semiconductor layer 105, that is, the same size as the upper surface 105a. Transparent electrode 1 The width of the upper surface 106a of 06 is about 30% in the width direction (left and right direction in FIG. 1). In addition, in the example shown in the plan view of FIG. 3, on the transparent electrode 206 (p-type semiconductor layer 205), a metallic metal plate 210, which is formed in a lattice shape in a plan view intersecting vertically and horizontally for each element, The contact layer 207 and the reflective layer 208 are formed with a width of about 30% in each of the vertical and horizontal directions on each element, and the area ratio of each element unit on the p-type semiconductor layer 205, that is, the area ratio on the transparent electrode 206 About 50%.

 As shown in FIG. 4, the nitride-based semiconductor light-emitting device of the present invention intersects the metal plate 310 and the ohmic contact layer 307 formed in a lattice shape in plan view by intersecting each device vertically and horizontally. The portion 320 may have a shape having a bulging portion 311 where the intersecting portion slightly swells in a substantially circular shape when viewed from above.

 [0024] A sapphire single crystal (Al 2 O 3) is used for the sapphire substrate 201 used in the above manufacturing process!

 2

; A face, C face, M face, R face), spinel single crystal (AgAl 2 O 3), ZnO single crystal, LiAlO single bond

3 2 4 2 crystal, LiGaO single crystal, oxide single crystal such as MgO single crystal, Si single crystal, SiC single crystal, Ga

 2

 A known substrate material such as As single crystal can be used without any limitation. If a conductive substrate such as SiC is used, it is possible to fabricate a device in which the positive and negative electrodes are arranged one above the other without using the substrate peeling. In that case, the buffer layer 202, which is an insulator, should be used. Therefore, the crystal of the nitride-based semiconductor layer grown on the sapphire substrate 201 deteriorates, and a good semiconductor element cannot be formed. In the present invention, the sapphire substrate 201 is peeled even when conductive SiC or Si is used.

[0025] Since the lattice constant of the sapphire single crystal substrate differs from that of the GaN by 10% or more, for example, the noffer layer 202 is generally used to improve the crystallinity of A1N or AlGaN isotropic GaN having an intermediate lattice constant. In the present invention, A1N and AlGaN are used without any limitation.

The nitride-based semiconductor has a heterojunction structure including, for example, an n-type semiconductor layer 103, a light emitting layer 104, and a p-type semiconductor layer 105. There are many known semiconductors represented by the general formula Al In Ga _ _ N (0≤x <l, 0≤y <l, x + y <l) as nitride-based semiconductor layers. Nitride semiconductors represented by the general formula Al InyGa__ (0≤χ <1, 0≤y <l, x + y <1) can be used without any limitation. [0027] The growth method of the nitride-based semiconductor is not particularly limited, and organometallic chemical vapor deposition (MO CVD), hydride vapor deposition (HPVE), molecular beam epitaxy (MBE), etc. All methods known to grow system semiconductors can be applied. A preferred growth method is the MOCVD method, which has the advantages of film thickness controllability and mass productivity.

 [0028] In the MOCVD method, hydrogen (H) or nitrogen (N) as a carrier gas is a group III material

 twenty two

 Trimethylgallium (TMG) or triethylgallium (TEG) as the Ga source, trimethylaluminum (TMA) or triethylaluminum (TEA) as the A1 source, trimethylindium (TMI) or triethylindium (TEI) as the In source, Ammonia (NH 3), hydrazine (NH 2), etc. are used as the N source that is a Group V material.

 3 2 4

 In addition, as a dopant, n-type has monosilane (SiH) or disilane (S

 Four

 i H), germane (GeH) as the Ge source, and p-type

2 6 4

 Sucyclopentagenyl magnesium (Cp Mg) or bisethylcyclopentadenyl

 2

 Noregnesium ((EtCp) Mg) is used.

 2

 [0029] As a method of dividing the nitride-based semiconductor on the sapphire substrate, a known technique such as an etching method or a laser cutting method can be used without any limitation. When the laser lift-off method is used, it is preferable that the sapphire substrate 101 is not damaged when the nitride-based semiconductor is divided from the viewpoint of good substrate peeling. Therefore, when dividing by the etching method, it is preferable to use a method in which the etching rate is low for the nitride substrate 101 and the etching rate is low for the sapphire substrate 101. When dividing with a laser, it is preferable to use a laser with a wavelength of 300 to 400 nm because of the difference in absorption wavelength between GaN and sapphire.

 [0030] As the performance required for the ohmic contact layer 107, it is essential that the contact resistance with the p-type semiconductor layer 105 is small.

 As a material for the ohmic contact layer 107, from the viewpoint of contact resistance with the p-type semiconductor layer 105, it is preferable to use a platinum group such as Pt, Ru, Os, Rh, Ir, and Pd, or Ag. More preferred are Pt, Ir, Rh and Ru, with Pt being particularly preferred.

The use of Ag for the ohmic contact layer 106 is preferred for obtaining good reflection, but the contact resistance is larger than Pt. Therefore, for applications that do not require much contact resistance Can also use Ag.

 However, when the transparent electrode 106 is formed on the p-type semiconductor layer 105 by force, the contact resistance between the transparent electrode 106 and the p-type semiconductor layer 105 is large. Since the contact resistance is reduced, the ohmic contact layer 107 can be made of Ti, V, Cr, Co, Ni, Zr, Nb, Mo, Hf, Ta, W, etc. in addition to the above materials!

[0031] The thickness of the ohmic contact layer 107 is preferably 0.1 nm or more in order to stably obtain a low contact resistance. More preferably, it is 1 nm or more, and uniform contact resistance can be obtained. Further, on the ohmic contact layer 107, a reflective layer 108 having an Ag alloy isotropic force may be provided. Pt, Ir, Rh, Ru, OS, Pd, etc. have lower reflectivity from visible light to ultraviolet region than Ag alloy. Therefore, light from the light emitting layer 104 is not sufficiently reflected, and it is difficult to obtain an element with high light emission output. In this case, if the ohmic contact layer 107 is thinly formed so that light can be sufficiently transmitted, and the reflection layer 108 made of an Ag alloy or the like is formed to obtain reflected light, good ohmic contact can be obtained and output can be obtained. It is possible to manufacture a device having a high height. In this case, the film thickness of the ohmic contact layer 107 is preferably 30 nm or less. More preferably, it is 10 nm or less.

 The method for forming the ohmic contact layer 107 and the reflective layer 108 is not particularly limited, and a known sputtering method or vapor deposition method can be used.

[0032] It is preferable to use an Ag alloy for the reflective layer 108.

 The thickness of the reflective layer 108 is preferably 0.1 nm or more in order to obtain good reflectance. More preferably, it is lnm or more, and good reflectance can be obtained. In addition, Ag alloy is prone to migration, so it is better to make it thinner, although it can be protected by glazing. Therefore, the film thickness is more preferably 200 nm or less.

 The method for forming the reflective layer 108 is not particularly limited, and a known sputtering method or vapor deposition method can be used. In the sputtering method, since the sputtered particles collide with the substrate surface with high energy to form a film, a film having high adhesion can be obtained. Therefore, it is more preferable to use the sputtering method.

For the transparent electrode 106, known materials such as ITO (In Sn—O alloy), IZO (In—Zn—O alloy), AZO (Zn —Al—O alloy) can be used without any limitation. . The thickness of the transparent electrode 106 is preferably set to lOOnm or more in order to stably obtain a low contact resistance. Light is also absorbed by the transparent electrode 106, so if it is too thick, the output will decrease. Therefore, the transparent electrode 106 is preferably 1 μm or less.

 The transparent electrode 106 is preferably formed on the entire surface on the p-type semiconductor layer 105 from the viewpoint of current diffusion.

 A method for forming the transparent electrode 106 is not particularly limited, and a known sputtering method or vapor deposition method can be used. Furthermore, annealing at a temperature of 100 ° C to 300 ° C after film formation is effective in reducing transmittance and sheet resistance.

 In order to improve the adhesion, a plating adhesion layer 109 may be formed immediately below the plating metal plate 110, that is, between the plating metal plate 110 and the reflective layer 108. The adhesion of the plating adhesion layer 109 is improved if it contains a large amount of substances mainly contained in the plating composition depending on the plating used for the plating metal plate 110. For example, the plating adhesion layer 109 preferably contains 50% by weight or more of the same composition as the main component occupying 50% by weight or more of the plating metal plate 110.

 [0035] Further, when NiP plating is used for the plating metal plate 110, it is preferable to use a Ni-based alloy for the plating adhesion layer. More preferably, a NiP alloy is used. In addition, when using a Cu plating for the plating metal plate 110, it is preferable to use a Cu-based alloy for the plating adhesion layer. More preferably, Cu is used.

 The thickness of the adhesion adhesion layer 109 is preferably 0.1 nm or more in order to obtain good adhesion. More preferably, it is 1 nm or more, and uniform adhesion can be obtained. The thickness of the adhesion adhesion layer 109 is not particularly limited, but is preferably 2 μm or less from the viewpoint of productivity. The method for forming the adhesion adhesion layer 109 is not particularly limited, and a known sputtering method or vapor deposition method can be used. In the sputtering method, the sputtered particles have high energy and collide with the substrate surface to form a film, so that a film with high adhesion can be obtained. Therefore, it is more preferable to use the sputtering method.

 [0036] Either the electroless plating or the electrolytic plating can be used for the plating metal plate 110.

In the case of electroless plating, it is preferable to use NiP alloy plating as the material. In the case of electrolytic plating, it is preferable to use Cu as the material. The thickness of the metal plating plate 110 is preferably 10 m or more in order to maintain the strength as a substrate. Further, if the plating metal plate 110 is too thick, peeling of the plating tends to occur and the productivity is lowered, so that the thickness is preferably 200 m or less.

 When carrying out the measurement, it is preferable to degrease and clean the surface of the nitride-based semiconductor light-emitting element in advance using a general-purpose neutral detergent or the like. Further, it is preferable to remove the natural acid film on the adhesion adhesion layer by performing chemical etching on the surface of the adhesion adhesion layer using an acid such as nitric acid.

 As a plating treatment method for NiP plating, etc., an electroless plating treatment method using a nickel bath such as nickel sulfate or nickel chloride and a phosphorus source such as hypophosphite is used as the plating bath. can do. A commercially available product suitable as a plating bath for use in the electroless plating method is Muden HDX manufactured by Uemura Kogyo. It is preferable that ρΗ of the plating bath when performing the electroless plating treatment is 4 to 10 and the temperature is 30 to 95 ° C.

[0037] As a plating treatment method for Cu or Cu alloy, an electrolytic plating treatment method using a Cu source such as copper sulfate as a plating bath can be employed. The pH of the plating bath during the electro plating treatment is preferably 2 or less under strong acid conditions. The temperature is more preferably 10 to 50 ° C, more preferably room temperature (25 ° C). The current density is preferably 0.5 to 10 AZdm2, more preferably 2 to 4 AZdm2. Further, it is more preferable to add a leveling agent to smooth the surface. Examples of commercially available products used for the leveling agent include ETN-1A and ETN-1B manufactured by Uemura Kogyo.

 [0038] Heat treatment is preferably performed to improve the adhesion of the metal sheet 110 obtained as described above. The heat treatment temperature should be in the range of 100 to 300 ° C. This is preferable from the viewpoint of improving adhesion. If the heat treatment temperature is at least the above range, the adhesiveness may be further improved, but the ohmic property may be lowered.

[0039] The ohmic contact layer 107, the reflective layer 108 (metal film layer), and the metal plating plate 110 are connected to the p-type semiconductor layer 105.

There are several methods that can be used to form partly.

As a method of partially forming the ohmic contact layer 107 and the reflective layer 108, a known film is used. Photolithographic techniques and lift-off techniques can be used.

 [0040] The following two methods are mainly conceivable as a method of partially forming the metallic metal plate 110.

 (1) An insulating protective film is formed on portions other than the ohmic contact layer 107 and the reflective layer 108 to be plated. Since the plating does not grow on the insulator, it is formed only on the nominated optical contact layer 107 and the reflective layer 108.

 (2) Using a thick film resist material for plating, a known photolithography technique and a lift-off technique are used.

 [0041] According to the pattern shape of the ohmic contact layer 107, the reflective layer 108, and the metal plating plate 110, the portion occupied by these layers on the P-type semiconductor layer 105 should be reduced as much as possible. It is necessary that 110 has a shape that balances the contradictory properties of maintaining strength as a substrate.

 The pattern of the ohmic contact layer 107, the reflective layer 108, and the metal plating plate 110 can be formed in a cross shape as shown in FIGS. 3 and 4 as much as possible on the p-type semiconductor layer 105. This is preferable in terms of maintaining the substrate strength while reducing the amount.

 However, the pattern of the ohmic contact layer 107, the reflective layer 108, and the metal plating plate 110 is not limited to the shape shown in FIGS. Any shape such as line shape, comb shape, annular shape, annular shape, L shape, Y shape, etc. may be used. be able to.

 [0042] Further, in order to make it easy to attach the bonding wire, it is preferable that the area of the portion where the metal pad is attached is formed wide. For example, as shown in FIG. 4, it is preferable for the metal pad to be attached that the intersecting portion 320 of the metal plate 310 at the center of the element is formed to have a substantially circular shape with a bulging portion 311 in plan view. Better!/,.

 [0043] After the metal plating plate 110 is formed, the sapphire substrate (see the sapphire substrate 201 in FIG. 2) is peeled off. As a method for peeling the sapphire substrate, a known technique such as a polishing method, an etching method, or a laser lift-off method can be used without any limitation.

After the sapphire substrate is peeled off, the buffer layer (Fig. 2 The n-type semiconductor layer 103 is exposed, and a negative electrode (not shown) is formed on the n-type semiconductor layer 103. As the negative electrode, those of various known compositions and structures can be used without any limitation.

 As the positive electrode, various structures using materials such as Au, Al, Ni, and Cu are known, and these known materials can be used without any limitation.

 Embodiment (No. 2) Further, hereinafter, other embodiments of the nitride-based semiconductor light-emitting device of the present invention will be described with reference to the drawings.

 5 to 8 are diagrams for explaining the nitride-based semiconductor light-emitting device of this embodiment. FIG. 5 shows an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer formed thereon, and FIG. The nitride of the present invention in which an ohmic contact layer, a reflective layer, and a plating adhesion layer are partially formed, a plating metal plate is formed thereon, and a translucent material layer is partially formed on the p-type semiconductor layer FIG. 3 is a schematic cross-sectional view showing an example of a semiconductor light emitting device. FIG. 6 is a diagram for explaining an example of a method for manufacturing a nitride-based semiconductor light-emitting device. In this embodiment, before the structure of the upper and lower electrode arrangement type as shown in FIG. A nitride-based semiconductor layer is formed. In addition, the two-dot chain line shown in Fig. 5 is formed in an intersecting state in plan view! 6 shows a part of the positive electrode formed on the plating metal plate, and the two-dot chain line shown in FIG. 6 indicates the ohmic contact layer, the reflective layer, the plating adhesion layer, A part of the metal plate is shown. FIGS. 7 to 9 are plan views for explaining a method for manufacturing a nitride semiconductor light-emitting device, in which a plurality of nitride-based semiconductor light-emitting devices formed on a substrate are arranged along dicing lines DL 1 and DL2. By dividing into the above, the nitride-based semiconductor light-emitting device of the present invention can be obtained.

The nitride-based semiconductor light-emitting device 1 of the present embodiment includes an n-type semiconductor layer 103, a light-emitting layer 104, a p-type semiconductor layer 105, a transparent electrode 106, an ohmic contact layer 107 (metal film layer), a reflective layer 108, The plating adhesion layer 109 and the plating metal plate 110 are laminated in this order (the vertical direction in FIG. 5). In the nitride semiconductor light emitting device 1, the reflective layer 108 and the plating adhesion are formed on the transparent electrode 106. The layer 109 and the metal plating plate 110 are laminated in this order, and these layers are partially formed on the p-type semiconductor layer 105 so as to intersect in a cross shape in plan view. Snow In other words, when viewed from the direction of the cross-sectional line A—A shown in FIG. 7, the ohmic contact layer 107, the reflective layer 108, and the adhesion adhesion layer 109 in the horizontal width direction (left-right direction in FIG. 5) of the example shown in FIG. Further, each width of the metal plate 110 is formed to be about 30% of the width of the transparent electrode 106. In addition, the vertical width direction of each layer of the ohmic contact layer 107, the reflective layer 108, the plating adhesion layer 109, and the plating metal plate 110 (the vertical direction in FIG. 5) is 100% of the width of the transparent electrode 106. It is formed. Also, when viewed from the direction of the cross-sectional line BB shown in FIG. 7, the horizontal width and the vertical width of the ohmic contact layer 107, the reflective layer 108, the plating adhesion layer 109, and the plating metal plate 110 shown in FIG. The relationship is the same as described above.

 Further, in the present embodiment, the transparent material layer 114 is formed on the transparent electrode 106 in a portion where the ohmic contact layer 107, the reflective layer 108, the plating adhesion layer 109, and the plating metal plate 110 are not formed. Yes.

 In the present embodiment, the negative electrode 113 is formed on the lower surface of the n-type semiconductor layer 103 via the transparent electrode 112, and the positive electrode 111 is formed on the upper surface of the metal plating plate 110. It is schematically configured.

 Next, the procedure for fabricating the nitride-based semiconductor light-emitting device of the present invention will be described below using the examples shown in FIGS.

 First, a buffer layer 202 is formed on a sapphire substrate (substrate) 201, and an n-type semiconductor layer 203, a light-emitting layer 204, and a p-type semiconductor layer 205 are stacked via the buffer layer 202 to form a nitride-based semiconductor layer. Form. A transparent electrode 206 is formed on the nitride-based semiconductor thus formed (that is, on the p-type semiconductor layer 205). The n-type semiconductor layer 203, the light emitting layer 204, the p-type semiconductor layer 205, and the transparent electrode 206 are formed to have the same horizontal width as shown in FIG. 6, and also to the same vertical size.

Next, on the transparent electrode 206, an ohmic contact layer 207 and a reflective layer 208 are formed by laminating in this order. As in the example shown in FIG. 7, the ohmic contact layer 207 and the reflective layer 208 according to the present embodiment are partially formed on the transparent electrode 206 in a lattice-like pattern in plan view so as to intersect each other vertically and horizontally. Form. The pattern formation of the ohmic contact layer 207 and the reflective layer 208 is performed by using a known photolithography technique or a lift-off technique described later by using a resist material. Then, the plating metal plate 210 is formed by applying plating. The metal plate 210 of the present embodiment is formed by forming an insulating protective film on a portion other than the portion where the ohmic contact layer 207 and the reflective layer 208 to be plated are to be formed, or for the plating. The thick film resist material is used, and only the pattern of the ohmic contact layer 207 and the reflective layer 208 is measured by a known photolithography technique or lift-off technique. Before the plating process, it is preferable to form the plating adhesion layer 209 in order to improve the adhesion between the plating metal plate 210 and the reflective layer 208 (metal film layer). Further, the adhesion adhesion layer 209 may be omitted.

 Next, as shown in FIG. 8, on the transparent electrode 206, the translucent material layer 214 is formed in a portion where the ohmic contact layer 207, the reflective layer 208, the metal adhesion layer 209, and the metal metal plate 210 are not formed. Form. In the example shown in FIG. 8, an ohmic contact layer 207, a reflection layer 208, a plating adhesion layer 209, and a plating metal plate 210 formed in a cross shape are formed on the transparent electrode 206, and a gap is formed in the portion. Without forming the translucent material layer 214.

 Next, the sapphire substrate 201 is peeled off, and the buffer layer 202 is further removed. Next, a positive electrode 111 and a negative electrode 112 shown in FIG. 5 are formed by forming a positive electrode and a negative electrode. Then, by dividing the metal plate 210 along the dicing lines DL1 and DL2 as shown in FIG. 7, the nitride semiconductor light emitting device 1 shown in FIG. 5 can be obtained.

 As shown in FIG. 5, the nitride-based semiconductor light-emitting device of this embodiment includes an ohmic contact layer 107, a reflective layer 108, a mesh layer laminated on a p-type semiconductor layer 105 with a transparent electrode 106 interposed therebetween. Each layer of the adhesion layer 109 and the metal plating plate 110 is partially formed so as to intersect with the upper surface 105a of the p-type semiconductor layer 105 via the transparent electrode 106 in a cross shape. Further, on the transparent electrode 106, the translucent material layer 114 is formed in a portion where the ohmic contact layer 107, the reflection layer 108, the plating adhesion layer 109 and the plating metal plate 110 are formed.

[0050] The area of the ohmic contact layer 107, the reflective layer 108, the plating adhesion layer 109, and the plating metal plate 110, that is, the area of the bottom 107a of the ohmic contact layer 107 is equal to the area of the upper surface 105a of the p-type semiconductor layer 105. Thus, the area ratio is preferably in the range of 10 to 90%. In the example shown in the cross-sectional view of FIG. 5, as described above, the transparent electrode in which the bottom 107a of the ohmic contact layer 107 is formed with respect to the upper surface 105a of the p-type semiconductor layer 105, that is, the same size as the upper surface 105a. The width is about 30% in the width direction (left and right direction in FIG. 5) with respect to the upper surface 106a of 106. Further, in the examples shown in the plan views of FIGS. 7 and 8, on the transparent electrode 206 (p-type semiconductor layer 205), a metal plate that is formed in a lattice shape in plan view intersecting each element vertically and horizontally. 210, the ohmic contact layer 207, and the reflective layer 208 are formed with a width of about 30% in each of the vertical and horizontal directions on each element, and the area ratio of each element unit on the p-type semiconductor layer 205, that is, the transparent electrode 206 The upper area ratio is about 50%.

 Further, as shown in FIG. 9, the nitride-based semiconductor light-emitting device of the present invention crosses the metal plate 310 and the ohmic contact layer 307 formed in a lattice shape in plan view by crossing each device in the vertical and horizontal directions. The portion 320 may have a shape having a bulging portion 311 where the intersecting portion slightly swells in a substantially circular shape when viewed from above.

 [0051] A sapphire single crystal (Al 2 O 3) is used for the sapphire substrate 201 used in the above manufacturing process!

 2

; A face, C face, M face, R face), spinel single crystal (AgAl 2 O 3), ZnO single crystal, LiAlO single bond

3 2 4 2 crystal, LiGaO single crystal, oxide single crystal such as MgO single crystal, Si single crystal, SiC single crystal, Ga

 2

 A known substrate material such as As single crystal can be used without any limitation. If a conductive substrate such as SiC is used, it is possible to fabricate a device in which the positive and negative electrodes are arranged one above the other without using the substrate peeling. In that case, the buffer layer 202, which is an insulator, should be used. Therefore, the crystal of the nitride-based semiconductor layer grown on the sapphire substrate 201 deteriorates, and a good semiconductor element cannot be formed. In the present invention, the sapphire substrate 201 is peeled even when conductive SiC or Si is used.

[0052] For example, since the lattice constants of the sapphire single crystal substrate and the GaN differ by 10% or more, the nota layer 202 is generally used to improve the crystallinity of A1N or AlGaN isotropic GaN having an intermediate lattice constant. In the present invention, A1N and AlGaN are used without any limitation.

The nitride-based semiconductor has a heterojunction structure including, for example, an n-type semiconductor layer 103, a light emitting layer 104, and a p-type semiconductor layer 105. As nitride-based semiconductor layers, many semiconductors represented by the general formula Al In Ga N (0≤x <1, 0≤y <1, x + y <1) are known. Even in the light, nitride-based semiconductors represented by the general formula Al In Ga _ _ Ν (0≤χ <1, 0≤y <l, x + y く 1) can be used without any limitation.

 [0054] The growth method of the nitride-based semiconductor is not particularly limited, and organometallic chemical vapor deposition (MO CVD), hydride vapor deposition (HPVE), molecular beam epitaxy (MBE), etc. All methods known to grow system semiconductors can be applied. A preferred growth method is the MOCVD method, which has the advantages of film thickness controllability and mass productivity.

 [0055] In the MOCVD method, hydrogen (H 2) or nitrogen (N 2) as a carrier gas is a group III material

 twenty two

 Trimethylgallium (TMG) or triethylgallium (TEG) as the Ga source, trimethylaluminum (TMA) or triethylaluminum (TEA) as the A1 source, trimethylindium (TMI) or triethylindium (TEI) as the In source, Ammonia (NH 3), hydrazine (NH 2), etc. are used as the N source that is a Group V material.

 3 2 4

 In addition, as a dopant, n-type has monosilane (SiH) or disilane (S

 Four

 i H), germane (GeH) as the Ge source, and p-type

2 6 4

 Sucyclopentagenyl magnesium (Cp Mg) or bisethylcyclopentadenyl

 2

 Noregnesium ((EtCp) Mg) is used.

 2

 [0056] As a method of dividing the nitride-based semiconductor on the sapphire substrate, a known technique such as an etching method or a laser cutting method can be used without any limitation. When the laser lift-off method is used, it is preferable that the sapphire substrate 101 is not damaged when the nitride-based semiconductor is divided from the viewpoint of good substrate peeling. Therefore, when dividing by the etching method, it is preferable to use a method in which the etching rate is low for the nitride substrate 101 and the etching rate is low for the sapphire substrate 101. When dividing with a laser, it is preferable to use a laser with a wavelength of 300 to 400 nm because of the difference in absorption wavelength between GaN and sapphire.

 As performance required for the ohmic contact layer 107, it is essential that the contact resistance with the p-type semiconductor layer 105 is small.

As a material for the ohmic contact layer 107, from the viewpoint of contact resistance with the p-type semiconductor layer 105, it is preferable to use a platinum group such as Pt, Ru, Os, Rh, Ir, and Pd, or Ag. More preferred are Pt, Ir, Rh and Ru, with Pt being particularly preferred. The use of Ag for the ohmic contact layer 106 is preferred for obtaining good reflection, but the contact resistance is larger than Pt. Therefore, Ag can be used for applications that do not require much contact resistance.

 However, when the transparent electrode 106 is formed on the p-type semiconductor layer 105 by force, the contact resistance between the transparent electrode 106 and the p-type semiconductor layer 105 is large. Since the contact resistance is reduced, the ohmic contact layer 107 can be made of Ti, V, Cr, Co, Ni, Zr, Nb, Mo, Hf, Ta, W, etc. in addition to the above materials!

[0058] The thickness of the ohmic contact layer 107 is preferably 0.1 nm or more in order to stably obtain a low contact resistance. More preferably, it is 1 nm or more, and uniform contact resistance can be obtained. Further, on the ohmic contact layer 107, a reflective layer 108 having an Ag alloy isotropic force may be provided. Pt, Ir, Rh, Ru, OS, Pd, etc. have lower reflectivity from visible light to ultraviolet region than Ag alloy. Therefore, light from the light emitting layer 104 is not sufficiently reflected, and it is difficult to obtain an element with high light emission output. In this case, if the ohmic contact layer 107 is thinly formed so that light can be sufficiently transmitted, and the reflection layer 108 made of an Ag alloy or the like is formed to obtain reflected light, good ohmic contact can be obtained and output can be obtained. It is possible to manufacture a device having a high height. In this case, the film thickness of the ohmic contact layer 107 is preferably 30 nm or less. More preferably, it is 10 nm or less.

 The method for forming the ohmic contact layer 107 and the reflective layer 108 is not particularly limited, and a known sputtering method or vapor deposition method can be used.

[0059] It is preferable to use an Ag alloy for the reflective layer 108.

 The thickness of the reflective layer 108 is preferably 0.1 nm or more in order to obtain good reflectance. More preferably, it is lnm or more, and good reflectance can be obtained. In addition, Ag alloy is prone to migration, so it is better to make it thinner, although it can be protected by glazing. Therefore, the film thickness is more preferably 200 nm or less.

The method for forming the reflective layer 108 is not particularly limited, and a known sputtering method or vapor deposition method can be used. In the sputtering method, since the sputtered particles collide with the substrate surface with high energy to form a film, a film having high adhesion can be obtained. Therefore, it is more preferable to use the sputtering method. [0060] For the transparent electrode 106, any known material such as ITO (In—Sn—O alloy), IZO (In—Zn—O alloy), AZO (Zn—Al—O alloy) may be used without any limitation. it can.

 The thickness of the transparent electrode 106 is preferably set to lOOnm or more in order to stably obtain a low contact resistance. Light is also absorbed by the transparent electrode 106, so if it is too thick, the output will decrease. Therefore, the transparent electrode 106 is preferably 1 μm or less.

 The transparent electrode 106 is preferably formed on the entire surface on the p-type semiconductor layer 105 from the viewpoint of current diffusion.

 A method for forming the transparent electrode 106 is not particularly limited, and a known sputtering method or vapor deposition method can be used. Furthermore, annealing at a temperature of 100 ° C to 300 ° C after film formation is effective in reducing transmittance and sheet resistance.

 Note that, in order to improve the adhesion, a plating adhesion layer 109 may be formed directly below the plating metal plate 110, that is, between the plating metal plate 110 and the reflective layer 108. The adhesion of the plating adhesion layer 109 is improved if it contains a large amount of substances mainly contained in the plating composition depending on the plating used for the plating metal plate 110. For example, the plating adhesion layer 109 preferably contains 50% by weight or more of the same composition as the main component occupying 50% by weight or more of the plating metal plate 110.

 [0062] When using NiP plating for the plating metal plate 110, it is preferable to use a Ni-based alloy for the plating adhesion layer. More preferably, a NiP alloy is used. In addition, when using a Cu plating for the plating metal plate 110, it is preferable to use a Cu-based alloy for the plating adhesion layer. More preferably, Cu is used.

 The thickness of the adhesion adhesion layer 109 is preferably 0.1 nm or more in order to obtain good adhesion. More preferably, it is 1 nm or more, and uniform adhesion can be obtained. The thickness of the adhesion adhesion layer 109 is not particularly limited, but is preferably 2 μm or less from the viewpoint of productivity. The method for forming the adhesion adhesion layer 109 is not particularly limited, and a known sputtering method or vapor deposition method can be used. In the sputtering method, the sputtered particles have high energy and collide with the substrate surface to form a film, so that a film with high adhesion can be obtained. Therefore, it is more preferable to use the sputtering method.

[0063] For the plating metal plate 110, either an electroless plating or an electrolytic plating can be used. In the case of electroless plating, it is preferable to use NiP alloy plating as the material. In the case of electrolytic plating, it is preferable to use Cu as the material.

 The thickness of the metal plating plate 110 is preferably 10 m or more in order to maintain the strength as a substrate. Further, if the plating metal plate 110 is too thick, peeling of the plating tends to occur and the productivity is lowered, so that the thickness is preferably 200 m or less.

 When carrying out the measurement, it is preferable to degrease and clean the surface of the nitride-based semiconductor light-emitting element in advance using a general-purpose neutral detergent or the like. Further, it is preferable to remove the natural acid film on the adhesion adhesion layer by performing chemical etching on the surface of the adhesion adhesion layer using an acid such as nitric acid.

 As a plating treatment method for NiP plating, etc., an electroless plating treatment method using a nickel bath such as nickel sulfate or nickel chloride and a phosphorus source such as hypophosphite is used as the plating bath. can do. A commercially available product suitable as a plating bath for use in the electroless plating method is Muden HDX manufactured by Uemura Kogyo. It is preferable that ρΗ of the plating bath when performing the electroless plating treatment is 4 to 10 and the temperature is 30 to 95 ° C.

[0064] As a plating treatment method for Cu or Cu alloy, an electrolytic plating treatment method using a Cu source such as copper sulfate can be employed as a plating bath. The pH of the plating bath during electroplating treatment is preferably 2 or less under strong acid conditions. The temperature is more preferably 10 to 50 ° C, more preferably room temperature (25 ° C). Current density is more preferably carried out in the preferred instrument 2～4AZdm ² be implemented by 0. 5~1 OAZdm ^2. Further, it is more preferable to add a leveling agent to smooth the surface. Examples of commercially available products used for the leveling agent include ETN-1A and ETN-1B manufactured by Uemura Kogyo.

 [0065] Heat treatment is preferably performed to improve the adhesion of the metal sheet 110 obtained as described above. The heat treatment temperature should be in the range of 100 to 300 ° C. This is preferable from the viewpoint of improving adhesion. If the heat treatment temperature is at least the above range, the adhesiveness may be further improved, but the ohmic property may be lowered.

[0066] The ohmic contact layer 107, the reflective layer 108 (metal film layer), the metal plating plate 110, and the p-type semiconductor layer 105

As a method of forming partly, V The law can be considered.

 As a method for partially forming the ohmic contact layer 107 and the reflective layer 108, a known photolithography technique and a lift-off technique can be used.

[0067] The following two methods are mainly conceivable as a method of partially forming the metallic metal plate 110.

 (1) An insulating protective film is formed on portions other than the ohmic contact layer 107 and the reflective layer 108 to be plated. Since the plating does not grow on the insulator, it is formed only on the nominated optical contact layer 107 and the reflective layer 108.

 (2) Using a thick film resist material for plating, a known photolithography technique and a lift-off technique are used.

 [0068] According to the pattern shape of the ohmic contact layer 107, the reflective layer 108, and the metal plating plate 110, the portion occupied by these layers on the P-type semiconductor layer 105 should be reduced as much as possible. It is necessary that 110 has a shape that balances the contradictory properties of maintaining strength as a substrate.

 The pattern of the ohmic contact layer 107, the reflective layer 108, and the metal plating plate 110 can be formed in a cross shape as shown in FIGS. 7 to 5 so that the portion that occupies as much as possible on the p-type semiconductor layer 105 is minimized. However, it is preferable in terms of maintaining the substrate strength.

 However, the pattern of the ohmic contact layer 107, the reflective layer 108, and the metal plating plate 110 is not limited to the shape shown in FIGS. 7 and 8, but on the transparent electrode 106, a lattice shape, a mesh shape, or a cross shape. Any shape such as line shape, comb shape, annular shape, annular shape, L shape, Y shape, etc. may be used. be able to.

 [0069] Further, in order to make it easy to attach the bonding wire, it is preferable that the area of the portion where the metal pad is attached is formed wide. For example, as shown in FIG. 9, it is preferable for the metal pad to be attached that the intersecting portion 320 of the metal plate 310 at the center of the element is formed to have a substantially circular shape with a bulging portion 311 in plan view. Better!/,.

[0070] As the translucent material forming the translucent material layer 114, it is preferable to use translucent resin, silica-based material, titania-based material, or the like. As the translucent resin, polymethylmetatalate resin, polycarbonate resin, polyimide resin, epoxy resin, silicon resin, etc. Known materials can be used without any limitation.

 A known method such as a spin coating method or an injection molding method can be used for the translucent resin coating method without any limitation, but the spin coating method is preferably used from the viewpoint of productivity.

 [0071] The silica-based material may be a silica-based material having translucency such as silica sol, methylsiloxane-based, high-methylsiloxane-based, hydrogen-methylmethylsiloxane-based, phosphorus-doped silicate-based, polysilazane-based, etc. For example, known materials can be used without any limitation. In addition, it is preferable to perform the treatment under humidified conditions after the application of the silica-based material from the viewpoint of easy transition to silica glass.

 After applying the silica-based material, it is preferable to perform beta at a temperature of 100 ° C to 500 ° C in terms of improving rigidity and removing moisture and organic components contained in the silica-based material.

 For the application of the silica-based material, a known method such as a spin coating method, a spray method, or a dip coating method can be used without any limitation, but the spin coating method is preferably used from the viewpoint of productivity.

 [0072] As the titer-based substance, any known material can be used without any limitation as long as it has a light-transmitting property such as titazole or phosphoric acid titer.

 It is preferable to apply beta at a temperature of 100 ° C to 500 ° C after application of the titer-based material in terms of improving rigidity and removing moisture and organic components contained in the titer-based material. For the application of the titer-based material, a known method such as spin coating, spraying, dip coating or the like can be used without any limitation. From the viewpoint of productivity, the spin coating method is preferably used. Better!/,.

[0073] The reason for providing the translucent material layer 114 is that the translucent material layer 114 is formed on the p-type semiconductor layer 105 (transparent electrode 106) using a translucent material having a high refractive index. In addition, the light extraction efficiency of the nitride-based semiconductor light-emitting device can be improved. Therefore, it is preferable that the translucent material layer 114 is formed on the p-type semiconductor layer 105 or on the p-type semiconductor layer 105 via the transparent electrode 106. The refractive index of the translucent material layer 114 is preferably in the range of 1.4 to 2.6 in terms of improving the light extraction efficiency of the nitride semiconductor light emitting device.

 The translucent material layer 114 preferably has a transmittance of 80% or more in a wavelength range of 350 nm to 550 nm.

[0074] Like the translucent material layer 214 in the example shown in FIG. 8, the translucent material layer has an ohmic contact layer 207, a reflective layer 208, a metal adhesion layer 209, and a metal metal on the transmission electrode 206. It is preferable to form the plate 210 without a gap in a portion where the plate 210 is not formed. As a result, it is possible to achieve both the improvement of the light extraction efficiency by the translucent material layer 214 and the improvement of the substrate strength by the metal plating plate 210.

 In addition, silica-based materials, titania-based materials and the like used for the light-transmitting material layer are originally difficult to form a thick film, but on the transmissive electrode 206, the ohmic contact layer 207, the reflective layer 208, By adopting a structure provided in close contact with the adhesion layer 209 and the metal plating plate 210, a thick film of 5 m or more can be formed.

 The film thickness of the translucent material layer needs to be 1 μm or more in order to improve the light extraction efficiency. In addition, since it is provided on the transmissive electrode 206 so as to be in close contact with the ohmic contact layer 207, the reflective layer 208, the plating adhesion layer 209, and the plating metal plate 210, the maximum thickness range of the plating metal plate 210 is maximized. The value must be 200 μm or less

[0075] After the metal plating plate 110 is formed, the sapphire substrate (see the sapphire substrate 201 in FIG. 6) is peeled off. As a method for peeling the sapphire substrate, a known technique such as a polishing method, an etching method, or a laser lift-off method can be used without any limitation.

 After peeling off the sapphire substrate, the buffer layer (see the buffer layer 202 in FIG. 6) is removed by a polishing method, an etching method, etc., the n-type semiconductor layer 103 is exposed, and an unillustrated on the n-type semiconductor layer 103 is removed. A negative electrode is formed. As the negative electrode, those of various known compositions and structures can be used without any limitation.

 As the positive electrode, various structures using materials such as Au, Al, Ni, and Cu are known, and these known materials can be used without any limitation.

Example [0076] Hereinafter, the present invention will be described in more detail with reference to Examples, but the present invention is not limited to these Examples.

[0077] [Example 1]

 In this example, a nitride-based semiconductor light-emitting device as shown in the schematic cross-sectional view of FIG. 1 was produced.

 First, a 5 m thick Si-doped n-type GaN contact layer, a 30 nm thick n-type InO. IGaO. 9N cladding layer, and a thickness on a sapphire substrate via a buffer layer (thickness lOnm) that also has an A1N force 30nm Si-doped GaN barrier layer and 2.5nm InO. 2GaO. 8N well layer is stacked 5 times, and finally a multi-well structure light emitting layer with barrier layer, 50nm thickness Mg-doped p-type AIO .07GaO. 93N cladding layer, 150nm thick Mg-doped p-type GaN contact layer in sequence.

 Next, a transparent electrode 106 made of ITO (Sn02: 10 wt%) having a thickness of 300 nm was formed on the ρ-type semiconductor layer 105 by a vapor deposition method. Then, annealing was performed for 1 hour at a temperature of 300 ° C. in an oxygen atmosphere.

 Next, an ohmic contact layer 107 having a Pt layer force with a thickness of 1.5 nm and a reflective layer 108 made of an Ag layer with a thickness of 30 nm were formed in this order by sputtering. Further, a plating adhesion layer 109 made of a 30 nm thick NiP alloy (Ni: 80 at%, P: 20 at%) was formed by sputtering. The ohmic contact layer 107 (Pt layer), the reflective layer 108 (Ag layer), and the adhesion adhesion layer 109 (Ni P alloy layer) are shown in FIG. 3 using a known photolithography technique and lift-off technique. Patterned like a cross.

At this time, the turn width W is 30 μm, and the cross-shaped pattern (area (30 X 300 + 30 X 270) = 17100 m ² ) for the transparent electrode area (300 X 300) = 90000 μm ² The area ratio was 17100,90000 = 19%.

[0079] Next, on the transparent electrode 106, a resist material made of Si02 was formed in a lOOnm film on portions other than the metal film layer made up of the ohmic contact layer 107, the reflective layer 108, and the metal adhesion layer 109. This resist material was patterned by a known photolithography technique and a lift-off technique.

Next, the surface of the adhesion layer 109 that also has NiP alloy strength is immersed in a nitric acid aqueous solution (5N). Then, it was treated at a temperature of 25 ° C. for 30 seconds to remove the oxide film.

 Next, an electroless plating having a NiP alloy strength of 50 m was formed on the plating adhesion layer 109 using a plating bath (Nimden HDX-7G, manufactured by Uemura Kogyo Co., Ltd.) to obtain a plating metal plate 110. The treatment conditions were pH 4.6, temperature 90 ° C, and treatment time 3 hours. Next, this metal sheet 110 was washed with water and dried, and then annealed for 1 hour at 250 ° C. using a clean oven.

 Next, the sapphire substrate and the buffer layer were separated by a polishing method to expose the n-type semiconductor layer 103.

 A transparent layer made of ITO (SnO: 10 wt%) having a thickness of 400 nm is formed on the surface of the n-type semiconductor layer 103.

 2

 A bright electrode was deposited by vapor deposition. Next, a negative electrode made of Cr (40 nm), Ti (100 nm), and Au (lOOOnm) was formed on the central portion of the ITO surface by vapor deposition. As the pattern of the negative electrode, a known photolithography technique and lift-off technique were used.

 On the p-type semiconductor surface, a positive electrode (not shown) made of Au (lOOOnm) was formed by vapor deposition.

 Subsequently, the nitride-based semiconductor element of the present invention having a 350 / zm square was obtained by dicing.

 The obtained nitride-based semiconductor light-emitting device was mounted in a TO-18 can package, and the light emission output at an applied current of 20 mA was measured by a tester. The light emission output was 2 OmW.

[0081] [Comparative Example 1]

 A conventional nitride is formed in the same manner as in Example 1 except that a transparent electrode made of ITO is not formed, and an ohmic contact layer, a reflective layer, and a metal plating plate are formed on the entire surface of the p-type semiconductor layer. A semiconductor device was fabricated.

 The fabricated nitride semiconductor light emitting device was mounted in a TO-18 can package, and the light emission output at an applied current of 20 mA was measured with a tester. The light emission output was 18 mW.

[0082] [Evaluation results]

As described above, the ohmic contact layer, the reflective layer, and the metal plating plate are partially formed on the p-type semiconductor layer. The nitride-based semiconductor light-emitting device of the present invention (Example 1) formed on the entire surface of the p-type semiconductor layer provided an ohmic contact layer, a reflective layer, and a metal plating plate, while emitting light of 20 mW. The conventional nitride-based semiconductor light-emitting device (Comparative Example 1) formed in 1) has an emission output of 18 mW, and an output difference of about 10% was confirmed.

 This is because the nitride-based semiconductor light-emitting device of the present invention shown in Example 1 has the above-described configuration and the area of the reflective layer 108 is made smaller than the area of the p-type semiconductor layer 105. This is thought to be due to the fact that light is absorbed in the light-emitting layer 104 when the light is reflected through the light-emitting layer 104 and is incident on the light-emitting layer 104, thereby reducing the light emission efficiency and improving the output from the back surface of the device. .

 This clearly shows that the nitride semiconductor light emitting device of the present invention is excellent in light extraction efficiency.

[0083] [Example 2]

 In this example, a nitride-based semiconductor light-emitting element as shown in the schematic cross-sectional view of FIG. 5 was produced.

 First, on a sapphire substrate, a 5 m thick Si-doped n-type GaN contact layer, a 30 nm thick n-type InGaN cladding layer, a thickness of 30 m, via a buffer layer (thickness lOnm) that also has an A1N force

 0. 1 0. 9

 nm Si-doped GaN barrier layer and 2.5 nm InGa N well layer 5 layers,

 0. 2 0. 8

 Finally, a multiwell light-emitting layer with a barrier layer, Mg-doped p-type Al G with a thickness of 50 nm

 A 0.07 a N clad layer and a 150 nm thick Mg-doped p-type GaN contact layer were sequentially stacked.

0. 93

 [0084] Next, on the p-type semiconductor layer 105, a transparent film made of ITO (SnO: 10wt%) with a thickness of 300nm is formed.

 2

 The bright electrode 106 was formed by vapor deposition. Then, annealing was performed for 1 hour at a temperature of 300 ° C. in an oxygen atmosphere.

Next, an ohmic contact layer 107 having a Pt layer force with a thickness of 1.5 nm and a reflective layer 108 made of an Ag layer with a thickness of 30 nm were formed in this order by sputtering. Further, a plating adhesion layer 109 made of a 30 nm thick NiP alloy (Ni: 80 at%, P: 20 at%) was formed by sputtering. The ohmic contact layer 107 (Pt layer), the reflective layer 108 (Ag layer), and the adhesion adhesion layer 109 (Ni P alloy layer) are shown in FIG. 7 using a known photolithography technique and lift-off technique. Patterned like a grid. At this time, the turn width W is 30 μm, and the cross-shaped pattern (area (30 X 300 + 30 X 270) = 17100 m ² ) for the transparent electrode area (300 X 300) = 90000 μm ² The area ratio was 17100,90000 = 19%.

[0085] Next, on the transparent electrode 106, on a portion other than the metal film layer composed of the ohmic contact layer 107, the reflective layer 108, and the plating adhesion layer 109, a thick film resist HAZ electoral materials company, AZ UT21-HR).

 Next, the surface of the adhesion layer 109 having NiP alloy strength was immersed in an aqueous nitric acid solution (5N) and treated at a temperature of 25 ° C. for 30 seconds to remove the oxide film.

 Next, an electroless plating having a NiP alloy strength of 50 m was formed on the plating adhesion layer 109 using a plating bath (Nimden HDX-7G, manufactured by Uemura Kogyo Co., Ltd.) to obtain a plating metal plate 110. The treatment conditions were pH 4.6, temperature 90 ° C, and treatment time 3 hours. Next, this metal sheet 110 was washed with water and dried, and then annealed for 1 hour at 250 ° C. using a clean oven.

 [0086] Next, liquid translucent resin (manufactured by Shin-Etsu Chemical Co., Ltd., silicon resin SCR-1011, refractive index 1.5) is placed on the transparent electrode 106 with an ohmic contact layer 107 and a reflective layer 108. Then, it is applied without any gap to the part other than the metal film layer composed of the Meat adhesion layer 109, dried for 1 hour at 100 ° C and for 5 hours at 150 ° C to cure the resin, A light-sensitive material layer 114 was formed.

 [0087] Next, the sapphire substrate and the buffer layer were separated by a polishing method to expose the n-type semiconductor layer 103.

 A transparent layer made of ITO (SnO: 10 wt%) having a thickness of 400 nm is formed on the surface of the n-type semiconductor layer 103.

 2

 A bright electrode was deposited by vapor deposition. Next, a negative electrode made of Cr (40 nm), Ti (100 nm), and Au (lOOOnm) was formed on the central portion of the ITO surface by vapor deposition. As the pattern of the negative electrode, a known photolithography technique and lift-off technique were used.

 On the p-type semiconductor surface, a positive electrode (not shown) made of Au (lOOOnm) was formed by vapor deposition.

Subsequently, the nitride-based semiconductor element of the present invention having a 350 / zm square was obtained by dicing. The obtained nitride semiconductor light emitting device was mounted in a TO-18 can package, and the light emission output at an applied current of 20 mA was measured by a tester. The light emission output was 2 lmW.

[Example 3]

 A nitride-based semiconductor device of the present invention was obtained by performing the same treatment as in Example 2 except that titania sol was used instead of silicon resin as the material of the translucent material layer 114.

 After application, titasol was dried and solidified by treatment for 1 hour at 150 ° C and 3 hours at 300 ° C. At this time, the refractive index of the titazole was 2.2. The obtained nitride semiconductor light emitting device was mounted in a TO-18 can package, and the light emission output at an applied current of 20 mA was measured by a tester. The light emission output was 22 mW.

[0089] [Comparative Example 2]

 A nitride-based semiconductor light-emitting device was fabricated in the same manner as in Example 2 except that the light-transmitting substance layer was not formed.

 The fabricated nitride semiconductor light emitting device was mounted in a TO-18 can package, and the light emission output at an applied current of 20 mA was measured with a tester. The light emission output was 2 OmW.

[0090] [Evaluation results]

 As described above, an ohmic contact layer, a reflective layer, and a metallic metal plate are partially formed on the p-type semiconductor layer, and each of the above layers is formed! The nitride-based semiconductor light-emitting device of Example 2 provided with the material layer had a light output of 21 mW. In addition, the nitride-based semiconductor light-emitting device of Example 3 that uses titasol resin instead of silicon resin as the material of the translucent material layer has a light emission output of 22 mW.

 In contrast, the nitride-based semiconductor light-emitting element shown in Comparative Example 2 in which no translucent material layer was formed had a light emission output of 20 mW.

[0091] In the nitride-based semiconductor light-emitting device of Example 2 using silicon resin having a refractive index of 1.5 as the material of the light-transmitting material layer, Comparative Example 2 in which the light-transmitting material layer is not formed Compared with the nitride-based semiconductor light-emitting device, the emission output was improved by 5%. In addition, the nitride-based semiconductor light-emitting device of Example 3 that uses titasol resin having a refractive index of 2.2 as the material of the translucent material layer is compared with the nitride-based semiconductor light-emitting device of Comparative Example 2. As a result, a 10% improvement in light output was confirmed.

 Since the refractive index when the light-transmitting material layer is not provided is 1, it can be seen that the light extraction efficiency is improved as the refractive index of the light-transmitting material layer is increased. This is because the use of a material having a high refractive index of 1.4 to 2.6 as the translucent material increases the critical angle and makes it more difficult to totally reflect. Note that the upper limit is 2.6 because the refractive index of GaN is 2.6, so there is no need to increase it further. If it is larger than this, it will be difficult to extract light from the translucent material.

 From the above results, it is clear that the nitride-based semiconductor light-emitting device of the present invention is excellent in light extraction efficiency.

Industrial applicability

 The nitride-based semiconductor light-emitting device provided by the present invention has excellent characteristics and stability and is useful as a material for light-emitting diodes and lamps.

Claims

The scope of the claims

 [1] In a nitride-based semiconductor light-emitting device in which at least an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, a metal film layer, and a metal plating plate are laminated on a substrate,

 The nitride-based semiconductor light-emitting device, wherein the metal film layer and the metal plate are partially formed on the P-type semiconductor layer.

[2] In a nitride-based semiconductor light-emitting device in which at least an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, a metal film layer, and a metal plating plate are laminated on a substrate,

 2. The nitride-based semiconductor light-emitting element according to claim 1, wherein the metal film layer and the metal plating plate are formed on the P-type semiconductor layer so as to intersect in plan view.

[3] The areas of the metal film layer and the metal plate formed on the p-type semiconductor layer are

The nitride-based semiconductor light-emitting device according to claim 1, wherein the area ratio with respect to the upper surface of the P-type semiconductor layer is in the range of 10 to 90%.

[4] The nitride system according to [1], wherein the n-type semiconductor layer, the light emitting layer, and the p-type semiconductor layer formed on the substrate are divided into element units in advance. Semiconductor light emitting device.

 5. The nitride-based semiconductor light-emitting element according to claim 1, wherein a transparent electrode is provided on the p-type semiconductor layer.

6. The nitride-based semiconductor light-emitting element according to claim 1, wherein the metal film layer includes an ohmic contact layer.

 [7] The nitride semiconductor according to [6], wherein the ohmic contact layer is composed of a single metal of Pt, Ru, Os, Rh, Ir, Pd, Ag, and Z or an alloy force thereof. Luminescent element.

 [8] The film thickness of the ohmic contact layer is 0. Inn! The nitride-based semiconductor light-emitting element according to claim 6, wherein the nitride-based semiconductor light-emitting element is in a range of ˜30 nm.

[9] The nitride-based semiconductor light-emitting element according to claim 1, wherein the thickness of the plating metal plate is in a range of 10 μm to 200 μm.

10. The nitride-based semiconductor light-emitting element according to claim 1, wherein the metal plating plate is made of NiP alloy, Cu, or Cu alloy.

11. The nitride-based semiconductor light-emitting element according to claim 1, wherein a metal adhesion layer is formed between the metal film layer and the metal metal plate.

12. The nitride according to claim 11, wherein the plating adhesion layer contains 50% by weight or more of the same composition as the main component occupying 50% by weight or more of the plating forming the plating metal plate. -Based semiconductor light emitting device.

 [13] The nitride-based semiconductor light-emitting element according to [11] or [12], wherein the plating adhesion layer is made of NiP alloy or Cu alloy.

[14] On the p-type semiconductor layer! Then, the metal film layer and the metal plate are formed.

2. The nitride-based semiconductor light-emitting device according to claim 1, wherein a translucent material layer is formed on V, and so on.

[15] The metal film layer and the metal plate formed on the p-type semiconductor layer are provided in an intersecting state in plan view,

 The metal film layer and the metal plate are formed on the P-type semiconductor layer.

15. The nitride-based semiconductor light-emitting device according to claim 14, wherein the light-transmitting material layer is provided in a portion that is V-shaped.

[16] The translucent material layer is laminated on the p-type semiconductor layer, and the translucent material layer is at least partially surrounded by the metal film layer and a metal plate. 15. The nitride semiconductor light emitting device according to claim 14.

[17] The translucent material layer is laminated on the p-type semiconductor layer via a transparent electrode, and the translucent material layer is partially surrounded by at least the metal film layer and a metal plate. 15. The nitride-based semiconductor light-emitting device according to claim 14,

[18] The nitride-based semiconductor light-emitting element according to [14], wherein the light-transmitting material layer is made of a light-transmitting resin, a silica-based material, or a titania-based material.

[19] The refractive index of the translucent material layer is in the range of 1.4 to 2.6.

14. The nitride semiconductor light-emitting device according to 14.

[20] The nitride-based semiconductor light-emitting element according to claim 14, wherein the translucent material layer has a thickness in a range of 10 μm to 200 μm.

[21] An n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer formed on the substrate are previously formed as a single element. 15. The nitride-based semiconductor light-emitting device according to claim 14, wherein the nitride-based semiconductor light-emitting device is divided into units.

[22] The nitride-based semiconductor light-emitting element according to [14], wherein the metal film layer includes an ohmic contact layer.

 [23] The nitride-based semiconductor according to [22], wherein the ohmic contact layer is composed of a single metal of Pt, Ru, Os, Rh, Ir, Pd, Ag, and Z or an alloy force thereof. Luminescent element.

 [24] The film thickness of the ohmic contact layer is 0. Inn! 23. The nitride-based semiconductor light-emitting element according to claim 22, wherein the nitride-based semiconductor light-emitting element is in a range of ˜30 nm.

[25] The nitride-based semiconductor light-emitting element according to claim 14, wherein the thickness of the metal sheet is in the range of 10 μm to 200 μm.

26. The nitride-based semiconductor light-emitting element according to claim 14, wherein the metal plating plate is made of NiP alloy, Cu, or Cu alloy.

27. The nitride-based semiconductor light-emitting element according to claim 14, wherein a metal adhesion layer is formed between the metal film layer and the metal metal plate.

28. The nitride according to claim 27, wherein the plating adhesion layer contains 50% by weight or more of the same composition as the main component occupying 50% by weight or more of the plating forming the plating metal plate. -Based semiconductor light emitting device.

 [29] The nitride-based semiconductor light-emitting element according to [27] or [28], wherein the adhesion adhesion layer is made of NiP alloy or Cu alloy.

[30] In the method for manufacturing a nitride-based semiconductor light-emitting device including a stacking step of stacking at least an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, a metal film layer, and a metal plating plate on a substrate, A method for producing a nitride-based semiconductor light-emitting device, wherein the metal film layer and the metal plate are partially formed on the p-type semiconductor layer.

31. The method for manufacturing a nitride-based semiconductor light-emitting element according to claim 30, wherein, in the stacking step, the metal film layer and the metal plate are individually formed in a cross shape in a line in plan view. .

[32] The stacking step is performed by attaching the n-type semiconductor layer on a substrate via a notch layer, 31. The method for manufacturing a nitride-based semiconductor light-emitting element according to claim 30, wherein the n-type semiconductor layer is exposed by removing the substrate and the buffer layer after completion of the stacking step.

 33. The method for manufacturing a nitride-based semiconductor light-emitting element according to claim 32, wherein the substrate is removed by a laser.

[34] The method for producing a nitride-based semiconductor light-emitting element according to any one of [30] to [33], wherein a heat treatment is performed at a temperature of 100 ° C. to 300 ° C. after forming the plated metal plate.

[35] On the p-type semiconductor layer! The method further comprises the step of forming a translucent material layer in a portion where the metal film layer and the metal plate are not formed.

A method for producing a nitride-based semiconductor light-emitting device according to 0.

36. The method for manufacturing a nitride-based semiconductor light-emitting element according to claim 35, wherein, in the stacking step, the metal film layer and the metal plate are individually formed in a cross shape in a line in plan view. .

 [37] The stacking step is performed by attaching the n-type semiconductor layer on a substrate via a notch layer,

 36. The method for manufacturing a nitride-based semiconductor light-emitting element according to claim 35, wherein the n-type semiconductor layer is exposed by removing the substrate and the buffer layer after completion of the stacking step.

 38. The method for manufacturing a nitride-based semiconductor light-emitting element according to claim 37, wherein the substrate is removed with a laser.

[39] The method for producing a nitride-based semiconductor light-emitting element according to any one of [35] to [38], wherein after forming the plated metal plate, heat treatment is performed at a temperature of 100 ° C to 300 ° C.