DE102008035254A1 - Optoelectronic semiconductor chip and optoelectronic component - Google Patents

Abstract

An optoelectronic semiconductor chip (1) is specified, having a semiconductor body (2) which is based on a III / V compound semiconductor material, and - an electrically conductive, metallic layer stack (3) which is arranged on the semiconductor body (2) in which - the metallic layer stack (3) comprises at least one first layer (32, 33) containing nickel, and - the metallic layer stack (3) comprises at least one second layer (35) containing gold, the first one (32 , 33) layer between the semiconductor body (2) and the second layer (35) is arranged.

Description

It an optoelectronic semiconductor chip is specified.

A The object to be solved is, inter alia, an optoelectronic Specify semiconductor chip, which is particularly inexpensive to produce. Another object to be solved is an optoelectronic Specify a semiconductor chip, the improved mechanical stability having. Furthermore, there is a problem to be solved, a Optoelectronic component with such an optoelectronic semiconductor chip specify.

At least an embodiment of the optoelectronic semiconductor chip the optoelectronic semiconductor chip comprises a semiconductor body. The semiconductor body may be an epitaxial act grown layer structure. The epitaxially grown layer structure may be grown on a growth substrate, for example, after completion of the epitaxial growth of the thus prepared Semiconductor body removed or at least thinned becomes. The optoelectronic semiconductor chip is then around a semiconductor chip in thin film construction. The semiconductor body can have a thickness in the range of 20 microns or less, especially in the range of 10 microns or less.

Optoelectronic semiconductor chips in thin-film construction are, for example, in the documents WO 02/13281 A1 such as EP 0 905 797 A2 described, the disclosure content of which is hereby expressly incorporated by reference to the thin-film construction of optoelectronic semiconductor chips.

Of the Semiconductor body includes, for example, an active zone, that for the detection or generation of electromagnetic radiation suitable is. For example, it is the optoelectronic Semiconductor chip then around a detector chip, such as a photodiode, or a luminescence diode chip, such as a light-emitting diode chip or a laser diode chip.

Of the Semiconductor body is preferably in the III / V semiconductor system educated. That is, it preferably has a III / V compound semiconductor material on. A III / V compound semiconductor material has at least one Element from the third main group, such as B, Al, Ga, In, and an element of the fifth main group, such as N, P, ace, up. In particular, the term "III / V compound semiconductor material" includes the Group of binary, ternary or quaternary Compounds containing at least one element from the third main group and contain at least one element from the fifth main group, For example, nitride and phosphide compound semiconductors. A such binary, ternary or quaternary For example, compound may also include one or more dopants and have additional constituents.

It but is also conceivable that the semiconductor body on a other material system such as a II / VI compound semiconductor material based.

One II / VI compound semiconductor material has at least one element from the second main group, such as Be, Mg, Ca, Sr, and an element of the sixth main group, such as O, S, Se, up. In particular, an II / VI compound semiconductor material comprises a binary, ternary or quaternary Compound comprising at least one element from the second main group and at least one element of the sixth main group. Such a binary, ternary or quaternary compound In addition, for example, one or more dopants and additional Have constituents. For example, the II / VI compound semiconductor materials include: ZnO, ZnMgO, CdS, ZnCdS, MgBeO.

At least an embodiment of the optoelectronic semiconductor chip the semiconductor chip has an electrically conductive, metallic Layer stack, which is arranged on the semiconductor body is.

Of the metallic layer stack is formed of at least two layers, containing different metals. The layer stack is electrically conductive, so that over him electric power can be embossed in the semiconductor body.

Of the Metallic layer stack may be at an upper side of the semiconductor body to be appropriate. The metallic layer stack is then a so-called bond pad, which is used to attach a contact wire, over which the semiconductor chip is electrically contacted, provided is. The metallic layer stack is located, for example on a radiation passage area of the semiconductor body. That is, the layer stack is then on a part applied to the outer surface of the semiconductor body, by the electromagnetic in operation of the semiconductor body Radiation occurs.

Further It is possible that the metallic layer stack additionally or alternatively at one of the radiation passage area remote from the bottom of the semiconductor body is located. The layer stack can then be used for soldering the semiconductor chip Find. It gives the semiconductor chip an additional mechanical stability.

At least an embodiment of the optoelectronic semiconductor chip the metallic layer stack comprises at least a first layer, containing nickel. The nickel-containing first layer is preferably parallel or substantially parallel to the epitaxially grown layers of the semiconductor body arranged. The first layer may for example consist of nickel or nickel phosphide (NiP). Furthermore, it is possible that the metallic layer stack comprises at least one layer, which consists of nickel, as well as another layer, which consists of nickel phosphide.

At least an embodiment of the optoelectronic semiconductor chip the metallic layer stack comprises at least a second layer, which contains gold. That is, the second layer of the layer stack may consist of gold or a gold-bearing Compound or a gold-containing alloy include. The second Layer is preferably also parallel or substantially parallel to epitaxially grown layers of the semiconductor body arranged.

At least an embodiment of the optoelectronic semiconductor chip is the first layer between the semiconductor body and the second layer arranged. That is, the electric conductive, metallic layer stacks then comprise a first layer and a second layer. The first layer contains nickel, the second layer contains gold. Both layers are parallel or arranged substantially parallel to one another and preferably run parallel or substantially parallel to epitaxially grown Layers of the semiconductor body. The first layer, which Contains nickel is closer to the semiconductor body arranged as the second layer containing gold.

At least an embodiment of the optoelectronic semiconductor chip the semiconductor chip comprises a semiconductor body and a electrically conductive, metallic layer stack on an upper side the semiconductor body, wherein the metallic layer stack includes at least a first layer containing nickel and a second layer containing gold, wherein the first layer between the semiconductor body and the second Layer is arranged.

The optoelectronic semiconductor chip described here is based inter alia on the following finding:
A layer containing nickel is a particularly hard, easily manufactured and easily reproducible layer. The layer may for example consist of nickel or additionally contain phosphorus. The layer may then be formed, for example, with nickel phosphide. Since a layer containing nickel has a particularly hard surface, the risk of the layer being scratched, for example, is reduced.

One Scratching the electrically conductive, metallic layer stack For example, in the manufacture of the optoelectronic semiconductor chip in the wafer composite, if individual optoelectronic semiconductor chips of the wafer composite by so-called "wafer samples" their functioning will be checked. Is the electrically conductive, metallic stack of layers now predominantly made of relatively soft metals, such as aluminum or gold, so can scratch the "wafer samples" the layer stack take place. This can be, for example, the recognizability the metallic layer stack by an electronic image processing in later steps - for example during wire contacting of the metallic layer stacks - reduce.

Further It has been shown that a second layer containing gold and the first layer containing nickel from the semiconductor body seen from below, the contactability of the metallic layer stack simplified by means of a contact wire. For example, is through the second layer, which contains gold, the liability of a gold-containing contact wire on the electrically conductive, metallic Layer stack improved.

After all has been shown to be a nickel-containing layer in the electrical conductive, metallic layer stack a mechanically robust and yet inexpensive metallization of the semiconductor body represents. The metallic layer stack can therefore be the semiconductor body for example, when contacting the optoelectronic semiconductor chip protect against mechanical loads.

All in all allows an optoelectronic semiconductor chip described here therefore a simplified, cheaper production. In addition, the optoelectronic semiconductor chip particularly well protected against mechanical loads.

In accordance with at least one embodiment of the optoelectronic semiconductor chip, the second layer is a cover layer of the metallic layer stack facing away from the semiconductor body. That is, the second layer, which contains gold, constitutes a termination layer of the metallic layer stack, which delimits the layer stack on its side facing away from the semiconductor body. Such a gold-containing cover layer of the metallic layer stack proves to be particularly advantageous in terms of wire contactability of the metallic layer stack. For example, a gold-containing metal wire can be deposited on a cover layer of the metallic layer stack Gold contains or consists of gold, attach particularly easily and mechanically stable. The metallic layer stack can thus serve in this case as a bonding pad, which is provided for wire bonding.

At least an embodiment of the optoelectronic semiconductor chip is the second, gold-bearing layer, thinner than the first, nickel-containing layer, of the metallic layer stack. Under "thickness" of Layers of the layer stack is the extension of the layers understood in the stacking direction. The stacking direction of the layer stack runs preferably perpendicular or substantially perpendicular to the epitaxial grown layers of the semiconductor body.

One Layer stack, in which the second, gold-containing layer thinner is the first, nickel-containing layer proves to be at least two reasons as particularly advantageous: First makes a thicker, first, nickel-containing layer a special good mechanical protection of the layer stack from scratching and of the semiconductor body from mechanical damage such as cracks or fractures, which in the contacting of the Optoelectronic semiconductor chips can occur, is. On the other hand proves to be a thin second, gold-containing layer as a particularly cost-effective.

The first, nickel-containing layer preferably has a thickness between at least 0.4 μm and at most 2.0 μm on. The second, gold-containing layer preferably has a thickness between at least 20 nm and at most 200 nm.

At least an embodiment of the optoelectronic described here Semiconductor chips are between the semiconductor body and the metallic one Layer stack arranged a contact layer, wherein the metallic Layer stack directly adjacent to the contact layer. The contact layer may be a layer on which the layers of the metallic Layer stacks are very easy to apply. About that In addition, the contact layer, the electrical contact between improve metallic layer stack and semiconductor body. Finally, the contact layer can be the adhesion of the metallic Layer stack improve to the semiconductor body.

The Contact layer, for example, epitaxially on the semiconductor body to have grown up. In addition, it is possible that the contact layer by means of coating methods, such as Sputtering or physical vapor deposition (English: physical vapor deposition, short PVD), is applied to the semiconductor body. The contact layer may contain gold, for example. For example if the contact layer is an or with an AuGe, AuZn or AuBe formed layer.

At least an embodiment of the optoelectronic semiconductor chip At least one layer of the metallic layer stack is galvanic deposited. That is, at least one layer of metallic Layer stack is by means of electrochemical deposition of metallic precipitates on, for example, the contact layer or a layer of the metallic Layer stack applied. In addition, it is then possible that all layers of the metallic layer stack are electrodeposited. The layer stack is in this Case completely galvanic generated.

At least an embodiment of the optoelectronic described here Semiconductor chips become at least one layer of the metallic layer stack de-energized.

For example, the publication "Last metal copper metallization for power devices", Advanced Semiconductor Manufacturing Conference, 2007, pages 259-362 describes the electroless deposition of metallic layers of a metallic layer stack. The disclosure of this document is hereby expressly incorporated by reference. Furthermore, the document describes "Low-cost electroless wafer bumping for 300 mm wafers", Business Briefing: Global Semiconductor Manufacturing Technology, 2003, pages 1 to 5 , the electroless deposition of metallic layers of a metallic layer stack. The disclosure of this document is hereby expressly incorporated by reference.

At the electroless deposition of layers of the metallic layer stack preferably uses a seed layer with copper or aluminum, for example, when depositing a palladium-containing layer is replaced.

For example At least one layer of the metallic layer stack becomes de-energized deposited. The layer can be on an underlying layer of the layer stack or on a contact layer or directly on the semiconductor body are deposited. About that It is also possible that all layers of the metallic layer stack are deposited without current.

Especially It is also possible that at least one layer of the metallic Layer stack is electrodeposited and at least one deposited further layer of the metallic layer stack without current becomes.

The optoelectronic described here Among other things, semiconductor chip is based on the knowledge that galvanic and / or electroless deposition of layers of the metallic layer stack allows a particularly cost-effective production of the optoelectronic semiconductor chip, since these deposition techniques are cheaper to implement than, for example, the coating by means of physical vapor deposition. In addition, a layer stack can be realized by means of galvanic and / or currentless deposition, which can have substantially thicker layers than, for example, a metallic layer stack produced by means of physical vapor deposition. For example, the layer stack can thereby comprise at least one nickel-containing layer which has a thickness of> 0.5 μm.

At least an embodiment of the optoelectronic semiconductor chip the metallic layer stack comprises at least one layer which Contains palladium, at least one layer containing nickel, at least one layer containing nickel phosphide, at least a layer containing copper and at least one layer, containing gold, the layer containing gold the outer layer facing away from the semiconductor body of the metallic Layer stack is. The copper-containing layer is optional.

One Such structure of the metallic layer stack proves in terms of electrical conductivity, adhesion to the semiconductor body and the ease of manufacture especially for a semiconductor body as being particularly advantageous, which on a phosphide compound semiconductor material based.

In this context, based on phosphide compound semiconductor material, the semiconductor body or at least a part thereof, particularly preferably at least the active zone, preferably comprises Al _n Ga _m In _1-nm P or As _n Ga _m In _1-nm P, where 0 ≤ n ≤ 1, 0 ≤ m ≤ 1 and n + m ≤ 1. In this case, this material does not necessarily have to have a mathematically exact composition according to the above formula. Rather, it may have one or more dopants as well as additional ingredients. For the sake of simplicity, however, the above formula contains only the essential constituents of the crystal lattice (Al or As, Ga, In, P), even if these may be partially replaced by small amounts of other substances.

there is it possible that the metallic layer stack of Semiconductor body seen from a layer sequence consisting of the following layers: A layer which made of palladium, a layer consisting of nickel, one Layer consisting of nickel phosphide, a layer which made of copper and a layer made of gold.

At least an embodiment of the optoelectronic described here Semiconductor chips, the metallic layer stack comprises layers, which contain palladium, nickel, copper and gold, the layer being which contains gold, which is the semiconductor body remote layer of the metallic layer stack is. This means, the second gold-bearing layer forms the covering layer of the metallic one Layer stack containing the metallic layer stack at its the outer surface facing away from the semiconductor body concludes. The layer stack is free of phosphorus. The copper-containing layer is optional.

One Metallic layer stack with these layers proves in terms of electrical conductivity, adhesion to semiconductor body as well as easy manufacturability especially with regard to a Nitride compound semiconductor material based semiconductor body as particularly advantageous.

Nitride compound semiconductor material based that of the semiconductor body or at least a part thereof, particularly preferably or at least the active region, a nitride compound semiconductor material, preferably Al _n Ga _m In _1-nm P is made of this, where 0 ≤ is in the present context, n ≤ 1, 0 ≤ m ≤ 1 and n + m ≤ 1. However, this material does not necessarily have to have a mathematically exact composition according to the above formula. Rather, it may, for example, have one or more dopants and additional constituents. For the sake of simplicity, however, the above formula contains only the essential constituents of the crystal lattice (Al, Ga, In, N), even if these can be partially replaced and / or supplemented by small amounts of further substances.

It In addition, an optoelectronic component is specified. In accordance with at least one embodiment of the optoelectronic component, the component comprises a connection carrier, having at least two electrical connection points. In which Connection carrier may be, for example, a support frame (also leadframe) act, the two electrically isolated from each other Having connection points for electrical contacting of the serve optoelectronic device. The support frame can for example, with an electrically insulating plastic or To be encapsulated ceramic material. In addition, it is possible that it is in the connection carrier to a circuit board with a base body made of an electrically insulating material acts on which or in which electrical conductors and / or electrical connection points are structured.

In accordance with at least one embodiment of the optoelectronic component, the optoelectronic component comprises at least one optoelectronic semiconductor chip, as described in connection with at least one of the previous embodiments. That is, the features described in connection with the optoelectronic semiconductor chip are also disclosed in connection with the optoelectronic device.

At least an embodiment of the optoelectronic device the metallic layer stack of the optoelectronic semiconductor chip by means of at least one contact wire with at least one of at least two electrical connection points electrically conductive connected. That is, the metallic layer stack is located For example, at a radiation passage area of the optoelectronic semiconductor chips. By wire bonding is the metallic layer stack is electrically conductive with one of at least two electrical connection points electrically conductive connected. The optoelectronic semiconductor chip can with his the metallic layer stack side facing away from another be applied to the at least two electrical connection points and be connected to this electrically conductive. For example can then also at the radiation passage area opposite bottom of the semiconductor body of the optoelectronic Semiconductor chips are a metallic layer stack, as he in connection with one of the previous embodiments is described.

At least an embodiment of the optoelectronic device the component is a connection carrier, the at least two electrical Having connection points and at least one optoelectronic Semiconductor chip, as described in connection with one of the previous embodiments is, wherein the metallic layer stack over at least a contact wire with at least one of the at least two electrical Connection points is electrically connected.

One here described optoelectronic component is based under on the realization that a metallic one described here Layer stack for wire bonding ("wire bonding") is particularly well suited. On the described metallic layer stack a contact wire can be particularly simple and mechanically resistant be applied. About the contact wire, the optoelectronic Semiconductor chip, for example, n-side energized.

At least an embodiment of the optoelectronic described here Component, the metallic layer stack comprises a semiconductor body facing away cover layer, wherein the cover layer and the contact wire Contain gold or consist of gold. That is, the topcoat of the metallic layer stack and the contact wire, by means of the optoelectronic semiconductor chip electrically conductive with a Connection point of the connection carrier is connected exist in this embodiment of the same material. Preferably they are made of gold. Gold has been doing in terms of its electrical Conductivity and easy attachment of the wire on the top surface of the metallic layer stack proved to be particularly advantageous.

in the The following describes the optoelectronic semiconductor chip described here as well as the optoelectronic component described here based on embodiments and the associated figures explained in more detail.

The 1 and 2 show schematic cross-sectional views of a first and a second embodiment of an optoelectronic semiconductor chip described here.

The 3 shows a schematic sectional view of an embodiment of an optoelectronic device described here.

Same, similar or equivalent elements are in the figures with provided the same reference numerals. The figures and the proportions the elements shown in the figures with each other are not to be considered to scale. Rather, you can individual elements for better presentation and / or for better Understanding shown exaggeratedly large be.

When in conjunction with the 1 described first embodiment of an optoelectronic semiconductor chip described here, the optoelectronic semiconductor chip 1 a semiconductor body 2 and a metallic layer stack 3 that is on a radiation exit surface 2a of the semiconductor body 2 is applied. In the present case, the optoelectronic semiconductor chip is a light-emitting diode chip that is designed in thin-film construction.

Of the Semiconductor body based on a phosphide compound semiconductor material.

The metallic layer stack 3 is by means of a contact layer 30 on the radiation exit surface 2a of the semiconductor body 2 applied. The contact layer 30 is for example by means of physical vapor deposition on the radiation exit surface 2a of the semiconductor body 2 deposited.

The layers of the layer stack 3 are electroless or galvanically applied to each other. The layer stack 3 includes a layer 31 , which consists of palladium, a layer 32 , which consists of nickel, a layer 33 made of nickel phosphide, a layer 34 , which consists of copper and a layer 35 which is made of gold.

The palladium-containing layer 32 preferably has a thickness between at least 100 nm and at most 500 nm. The nickel-containing layers 32 . 33 each preferably have a thickness between at least 0.25 microns and at most 2.0 microns. The gold-bearing layer 35 preferably has a thickness of 30 nm.

At the layers 32 and 33 it is the above-mentioned, nickel-containing first layer of the layer stack. That is, the first layer is in the present case formed from two partial layers, wherein the semiconductor body 2 facing layer 32 consists of nickel and the semiconductor body facing away from the layer 33 nickel phosphide (NiP).

The layer stack has a gold-containing layer 35 which forms the above-mentioned second layer. This second layer also forms the semiconductor body 2 facing away cover layer of the layer stack 3 ,

The layer stack 3 Amongst others, it is distinguished by its ease of manufacture, its good bondability and the hardness of the nickel-containing layers 32 . 33 out. The described layers are preferably applied to one another in the described order from the semiconductor body and directly adjoin one another. That is, the individual layers of the layer stack directly adjoin one another and are in direct contact with each other.

The layer stack 3 with a phosphorus-containing layer 33 proves to be particularly advantageous in terms of its adhesion and its electrical properties, especially in conjunction with a semiconductor body based on a phosphide compound semiconductor material.

On the radiation exit surface 2a Furthermore, contact structures such as contact tracks or contact frames may be arranged, which are electrically conductive with the metallic layer stack 3 are connected. These contact structures can have the same structure as the metallic layer stack. In addition, it is possible that they have a different structure and contain other materials. For example, the contact structures may comprise a copper layer on top of the contact layer 30 arranged and encapsulated with nickel. The contact structures distribute this over the layer stack 3 impressed current over the entire radiation exit surface 2a ,

In conjunction with the 2 a second exemplary embodiment of an optoelectronic semiconductor chip described here is explained. The semiconductor chip 1 comprises in this embodiment, in contrast to the embodiment, in connection with the 1 is described, a semiconductor body 2 which is based on a nitride compound semiconductor material. In contrast to the embodiment of 1 includes the layer stack 3 in this embodiment, no phosphorus-containing layer. Such a layer stack 3 with respect to its adhesion and its electrical properties, in particular in connection with the semiconductor body based on nitride compound semiconductor material 2 as particularly advantageous.

Both in the embodiment, in conjunction with the 1 is described as well as the embodiment, in connection with the 2 is described, the contact layer 30 optional. That is, in at least some embodiments of the optoelectronic semiconductor chip described herein, the layer stack may be directly on the radiation exit surface 2a of the semiconductor body 2 be upset. In this case, the layer stack is preferably galvanic and / or currentless on the semiconductor body 2 deposited.

In both embodiments, the gold-containing, second layers 35 a much smaller thickness d2 than the nickel-containing second layers 32 . 33 , The thickness d1 of the nickel-containing layers is at least 0.5 μm. The thickness d2 of the gold-containing layer 35 can be 100 nm or less.

In conjunction with the 3 is explained with reference to a schematic sectional view of an embodiment of an optoelectronic device described here. In this embodiment, an optoelectronic semiconductor chip, as used in conjunction with the 1 and 2 is described on a connection carrier 5 applied, the two electrical connection points 51 . 52 having. A metallic layer stack described here 3 can not only be on the radiation exit surface 2a the semiconductor body, but also at the radiation exit surface 2a remote from the bottom of the semiconductor body 2 are located.

The on the radiation exit surface 2a arranged metallic layer stacks 3 is by means of a contact wire 4 electrically conductive with the second electrical connection point 52 whereas the semiconductor chip has its bottom side connected to the first connection point 51 of the connection carrier 5 is applied.

The semiconductor body 2 includes an active zone 21 , Which in the present case under energization of the semiconductor body 2 is suitable for generating electromagnetic radiation.

The The invention is not by the description based on the embodiments limited to these. Rather, the invention comprises each new feature as well as any combination of features, which in particular any combination of features in the claims includes, even if this feature or this combination itself not explicitly in the patent claims or embodiments is specified.

QUOTES INCLUDE IN THE DESCRIPTION

This list The documents listed by the applicant have been automated generated and is solely for better information recorded by the reader. The list is not part of the German Patent or utility model application. The DPMA takes over no liability for any errors or omissions.

Cited patent literature

• WO 02/13281 A1 [0004]
• EP 0905797 A2 [0004]

Cited non-patent literature

• "Last metal copper metallization for power devices", Advanced Semiconductor Manufacturing Conference, 2007, pages 259 to 362 [0030]
• - "Low-cost electroless wafer bumping for 300 mm wafers", Business Briefing: Global Semiconductor Manufacturing Technology, 2003, pages 1 to 5 [0030]

Claims (14)

Optoelectronic semiconductor chip ( 1 ) with a semiconductor body ( 2 ) based on a III / V compound semiconductor material or a II / VI compound semiconductor material, and - an electrically conductive, metallic layer stack ( 3 ), which on the semiconductor body ( 2 ), wherein - the metallic layer stack ( 3 ) comprises at least a first layer ( 32 . 33 ), which contains nickel, and - the metallic layer stack ( 3 ) at least a second layer ( 35 ) containing gold, the first ( 32 . 33 ) Layer between the semiconductor body ( 2 ) and the second layer ( 35 ) is arranged. Optoelectronic semiconductor chip according to the preceding claim, in which the first layer ( 32 . 33 ) consists of one of the following materials: nickel, nickel phosphide. Optoelectronic semiconductor chip according to one of the preceding claims, in which the second layer ( 35 ) a the Häger body ( 2 ) facing away cover layer of the metallic layer stack ( 3 ). Optoelectronic semiconductor chip according to one of the preceding claims, in which the metallic layer stack ( 3 ) is wire-contactable. Optoelectronic semiconductor chip according to one of the preceding claims, in which the second layer ( 35 ) is thinner than the first layer ( 32 . 33 ). Optoelectronic semiconductor chip according to one of the preceding claims, in which between the semiconductor body ( 2 ) and the metallic layer stack ( 3 ) a contact layer ( 30 ), wherein the metallic layer stack ( 3 ) directly to the contact layer ( 30 ) borders. Optoelectronic semiconductor chip according to one of the preceding claims, in which at least one layer of the metallic layer stack ( 3 ) is electrodeposited. Optoelectronic semiconductor chip according to one of the preceding claims, in which at least one layer of the metallic layer stack ( 3 ) is deposited electrolessly. Optoelectronic semiconductor chip according to one of the preceding claims, in which the metallic layer stack ( 3 ) Layers with palladium ( 31 ), Nickel ( 32 ), Nickel phosphide ( 33 ), Copper ( 34 ), and gold ( 35 ), wherein the layer ( 35 ), which contains gold, which the Hableiterkörper ( 2 ) facing away cover layer of the metallic layer stack ( 3 ). Optoelectronic semiconductor chip according to the preceding claim, in which the semiconductor body ( 2 ) based on a phosphide compound semiconductor material. Optoelectronic semiconductor chip according to one of Claims 1 to 8, in which the metallic layer stack ( 3 ) Layers with palladium ( 31 ), Nickel ( 32 ), Copper ( 34 ), and gold ( 35 ), wherein the layer ( 35 ), which contains gold, which the Hableiterkörper ( 2 ) facing away cover layer of the metallic layer stack ( 3 ). Optoelectronic semiconductor chip according to the preceding claim, in which the semiconductor body ( 2 ) based on a nitride compound semiconductor material. Optoelectronic component with - a connection carrier ( 5 ) having at least two electrical connection points ( 51 . 52 ), and - at least one optoelectronic semiconductor chip ( 1 ) according to one of the preceding claims, wherein - the metallic layer stack ( 3 ) by means of at least one contact wire ( 4 ) with at least one of the at least two electrical connection points ( 51 . 52 ) is electrically connected. Optoelectronic component according to the preceding claim, in which the metallic layer stack ( 3 ) a the Häger body ( 2 ) facing away cover layer ( 35 ), wherein the cover layer ( 35 ) and the contact wire ( 4 ) Contain gold.