WO2007018884A1 - Amplification de signaux oscillateurs rf ttl a logique numerique et technologie de commutation de puissance pour des fournisseurs de puissance rf laser co2 - Google Patents

Amplification de signaux oscillateurs rf ttl a logique numerique et technologie de commutation de puissance pour des fournisseurs de puissance rf laser co2 Download PDF

Info

Publication number
WO2007018884A1
WO2007018884A1 PCT/US2006/026644 US2006026644W WO2007018884A1 WO 2007018884 A1 WO2007018884 A1 WO 2007018884A1 US 2006026644 W US2006026644 W US 2006026644W WO 2007018884 A1 WO2007018884 A1 WO 2007018884A1
Authority
WO
WIPO (PCT)
Prior art keywords
signal
output
transformer
power
switches
Prior art date
Application number
PCT/US2006/026644
Other languages
English (en)
Inventor
W. Shef Robotham
Original Assignee
Coherent, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Coherent, Inc. filed Critical Coherent, Inc.
Publication of WO2007018884A1 publication Critical patent/WO2007018884A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217—Class D power amplifiers; Switching amplifiers

Definitions

  • the present invention relates to power supplies and power switches, such as those used to drive the discharges of laser systems.
  • logic circuits are easier to design and manufacture, and occupy less space, than RF analog circuits. It is also well known that digital microelectronic chips are less expensive than analog chips.
  • the RF power supplies used to excite the discharges of CO 2 lasers presently utilize analog power devices and analog circuits that operate anywhere in the 13.56MHz to 160MHz region.
  • the lower frequencies are used primarily in CO 2 lasers having free space mode resonators and larger diameter discharges.
  • CO 2 lasers that use wave- guiding between two or four parallel sides of a long laser cavity structure, containing the discharge use the higher frequency RF power supplies and have small separation between the electrodes (i.e., lmm or less).
  • Higher RF frequency discharges are capable of operating at higher gas pressures (i.e., greater than 50 Torr) that have the advantage of providing higher power laser outputs for the same size laser.
  • FIG. 1 is a schematic diagram illustrating an active RF impedance transformation circuit that can be used in accordance with an embodiment of the present invention.
  • FIG. 2A-2D shows a series of timing sequences for "H" switch operation in accordance with an embodiment of the present invention.
  • FIG. 3 is a schematic diagram illustrating an embodiment of the digital logic controller of the FIG. 1 circuit.
  • FIG. 4 shows a series of timing sequences for the logic circuits of FIG. 3 digital logic controller.
  • FIG. 5 shows a series of plots for signals of the HG. 3 digital logic controller.
  • a system in accordance with one embodiment of the invention utilizes fast semiconductor switches arranged in a power "H"-bridge configuration (also called a “power bridge”), capable of operation in the frequency ranges of interest, to provide efficient and low cost RF power to drive CO 2 laser discharges.
  • An "H"-bridge switch or “power bridge” arrangement is used with the aid of digital logic chips to amplify the output of crystal controlled RF oscillators, such as commercially available transistor-transistor-logic (TTL) oscillators utilized in the computer industry, to reduce the number of analog RF amplification stages and achieve the desired output power to drive laser gas discharges.
  • TTL transistor-transistor-logic
  • a TTL oscillator typically used as an RF oscillator in CO 2 laser RF power supplies, such as model OSC-XCO-52-D, puts out about 3mW at 100MHz.
  • An H-bridge switch utilizing four model 74CBT3125 Buss Switch devices operating from a 5V dc supply can amplify the 3mW output to approximately 56mW. This amplification can eliminate one or two RF amplification stages in the RF power supply driving the discharge of a IOOW output CO 2 laser.
  • the use of a MOSFET model L8701 preliminary amplifier increases the 56mW output from the H-power bridge to 5W.
  • MOSFET amplifier stage i.e., a Philip model BL:F177
  • IOOW IOOW
  • the addition of two ST Microelectronics model SD2943 devices in push-pull operation can amplify the output power to 500W of average output power (or IOOOW at 50% duty cycle). This is sufficient power to drive a 55W average power output CO 2 waveguide laser.
  • logic gates can provide numerous advantages over the use of analog circuits, including lower component cost, smaller size and fewer problems with spurious oscillation arising from the stray RF coupling normally associated with cascaded analog circuits.
  • Using digital technology can also reduce the required RF shielding and separation between the RF electronic components, which results in smaller size RF electronic packaging for the RF supply. This advantage occurs because the low level amplification stages are operating in saturation, as opposed to linear gain operation.
  • the RF frequencies normally utilized for driving the discharges of CO 2 lasers are anywhere from 13.56MHz to about 200MHz. Of particular interest is the frequency range from 80-100Mz for 30-500W laser systems.
  • the RF frequencies below 50MHz are used to drive larger cross sectional area laser discharges that tend to operate at lower pressures than smaller cross sectional areas discharges, such as in wave-guide or slab laser discharges. Discharges associated with wave-guide or slab lasers tend to operate at higher gas pressures (i.e., greater than 50 Torr).
  • an RF excited, diffusion cooled, sealed-off CO 2 laser has about 10% efficiency. Consequently, a IOOOW output laser can require a 10,000W RF power supply, while a 1OW output CO 2 laser can require a IOOW RF power supply.
  • the amplification of 3mW from the TTL oscillator to 10,000W requires a gain of approximately 3.3 million and a gain of 33,000 for the IOOW lasers. Any reduction in the required analog RF amplification can reduce cost and thus be beneficial in the marketplace.
  • a further advantage of utilizing Buss Switches in a H-bridge power supply, in addition to the ability of utilizing digital logic devices to control RF switches, is that the output impedance of the TTL oscillator (i.e., 320 Ohms) is compatible with the input impedance of the digital logic circuits, thereby eliminating the need for impedance matching circuits between the output of the TTL oscillator and inputs of the RF amplifiers.
  • the output impedance of the TTL oscillators generally is not compatible with the input impedance of high power FETS or CMOS devices.
  • the input impedance of high power RF semiconductor amplifiers typically is a low impedance (i.e., below 50 ohm).
  • the output impedance of the H-bridge is easily made compatible with the input impedance of these RF amplifiers.
  • a circuit in accordance with an embodiment of the present invention utilizes a combination of digital techniques to control a power H-bridge and an RF amplifier in order to obtain a conservative 5W of output power at frequencies of interest in driving CO 2 laser discharges.
  • the RF carrier is supplied by a conventional CMOS/TTL crystal oscillator that is passed through logic gates, causing the oscillator output to be turned on and off. Either continuous wave (CW) modulation or pulse width modulation of the laser discharge can then be implemented.
  • the RF gating is performed using a family of logic chips, such as those utilized in the computer industry, that have rise and fall times commensurate with the desired RF output frequency.
  • an exemplary RF amplifier design uses computer Buss Switches that are configured in an "H" bridge that operates at a desired RF frequency, such as at 100MHz. These Buss Switches are sufficiently fast to be useful up to 100MHz and higher.
  • the top left switch SB-I and the bottom right switch SB-4 of the "H" bridge are turned on while the top right switch SB-3 and the bottom left switch SB-2 are turned off, and vice versa, at the RF carrier frequency.
  • Activation in this manner causes the resulting bridge peak-to-peak output swing to be twice the voltage of the dc power supply. In one example, a 5V dc supply provides a 10V peak to peak.
  • the load impedance placed on the bridge can be significantly lower than a logic gate can tolerate, such as 50 Ohms verses 330 Ohms, respectively.
  • a step down transformer 16 can be used in the H-bridge to provide a closer impedance match to the typical VMOS or LDMOS transistors utilized for amplification to higher powers. With this topology, just a single stage of conventional RF gain can be used to obtain a 5-lOW output from a 3mW input.
  • a 'no output' or similar state can be used to ensure that both sides of the bridge are off, preventing excess power consumption.
  • a gating signal also can be applied to the gate of the RF amplifier to increase the gain of the stage when the carrier is "on” and cut off the device when the carrier is "off, thereby further reducing the self-oscillation tendency of the unit.
  • FIG. 1 illustrates an exemplary RF H-bridge power circuit 10 with an associated logic circuit controller 12.
  • the four electronic Buss Switches SB-I, SB-2, SB-3 and SB-4 included in the H-bridge are represented in the form of mechanical switches in order to simplify the presentation of the basic operating principals of the invention.
  • the output of a crystal controlled TTL oscillator 14 is fed to the logic circuit controller 12.
  • the oscillator 14 has an output of 3mW and an impedance of approximately 320 Ohm at a specific RF frequency (such as at 100MHz).
  • One function of a logic circuit 12 such as that shown in FIG. 1 is to turn switches SB-I, SB-2, SB-3 and SB-4 on and off in the proper sequence, so as to draw current from the dc power supply in a manner to approximately reproduce the RF square wave from the TTL oscillator 14.
  • the voltage out of the H-bridge 10 is approximately 10V (peak to peak) for a 5V dc power supply, which is common in digital technology.
  • Logic circuit controller 12 also has the capability of accepting an "enabler signal” that pulse-width modulates the input signal to the "H” switches, such that the output of the "H” switches is pulse-width modulated.
  • Pulse width modulation is a commonly utilized technique for varying the average output power of a CO 2 laser by varying the average input power into the discharge from the RF power supply, as will be explained in greater detail below in conjunction with FIG. 4.
  • Buss Switches SB-I, SB-2, SB-3 and SB-4 are arranged in an "H" power bridge switch configuration, as shown in FIG. 1.
  • An RF transformer 16 is connected as shown between switches SB-l/SB-2 and SB-3/SB-4.
  • the logic circuit 12 Upon the start of the first half cycle of the RF periodic wave from the TTL oscillator 14, the logic circuit 12 sends commands via signal S 1 to close switches SB-I and SB-4 of the H-bridge. This allows current to flow from the dc power supply (shown here as 5V) through switch SB- 1, from left to right through the primary of the RF transformer 16, and then through switch SB -4 to ground.
  • the dc power supply shown here as 5V
  • the logic circuit controller 12 commands switches SB-I and SB-4 to open via signal S 1 and then commands switches SB-3 and SB-2 to close via signal S 2 .
  • This process first stops current flow through the switch SB -I/transformer primary winding/switch BS-4 to ground path and then allows current to flow from the dc power supply through switch SB-3, from right to left through the primary winding of RF transformer 16 in FIG. 1 through switch SB-2 to ground. This action completes the first positive and negative portion of the RF square wave.
  • the ratio of the number of windings between the primary winding and secondary winding of the transformer 16 offers the designer the ability to perform impedance matching to the pre-amplifier 18 of FIG. 1.
  • the 320 Ohm output impedance of the TTL oscillator 14 in the FIG. 1 embodiment is transformed to a 12.5 Ohm impedance out of the transformer secondary winding of the "H" switch circuits, which is a reasonable match to the input impedance of the preliminary amplifier 18.
  • the transformer 16 tends to round off the corners of the square wave RF signal so that a distorted sinusoidal RF waveform is obtained to drive the preliminary RF amplifier 18 of FIG. 1.
  • the average power out of the RF H-bridge 10 was found to be 56mW. This power is sufficient to drive the preamplifier 18 of FIG. 1 in a high efficiency mode of non-linear amplification.
  • an efficiency of approximately 70% was obtained in a class C mode of operation.
  • With a class E mode of operation approximately about 90% efficiency was found to be possible.
  • a non-linear class of operation therefore, is desirable since the efficiency and power output of power amplifiers (PA) is enhanced.
  • an impedance transformation of the 320 Ohms output of the TTL to 12.5 Ohms for the input of the amplifier 18 also can be provided.
  • CO 2 lasers have about 10% efficiency in converting RF power into laser power out. Consequently, a 500W output CO 2 laser will require approximately 5000W of RF power.
  • To go from 3mW to 5,00OW can require an analog RF gain of approximately 4.7 million.
  • the "H" switch output of 56mW can be used to reduce the required analog gain to approximately 89,000 if a 5V dc power supply and (e.g., 74CBT3125 model) Buss Switches are used to switch at a 100 MHz rate. Even better performance in gain can be obtained at lower frequencies. Starting with the 5 W output from the amplifier 18, an additional gain of 1000 is needed after the amplifier 18 of FIG. 1 to achieve a 5,000 W output.
  • FIGS. 2A-2D illustrate exemplary basic timing sequences for RF "H-bridge" switch operation, such as for the switch 10 shown in FIG. 1.
  • the enable signal is assumed to be on continuously and is not shown in FIGS. 2A-2D.
  • FIG. 2A shows the initiation of the first positive half cycle of the RF square wave from the TTL oscillator 14, followed by the initiation of the first zero half cycle at t 2 (and similarly for t 3 , U, etc.).
  • FIG. 2B illustrates the current flow from the 5 V dc power supply through switch SB-I, then (from left to right) through the primary winding of the transformer 16, and then through switch SB-4 to ground under the "close” command signals from signal Si of FIG. 1 at time ti, and then the "open” command signals from signal Si at time “t 2 ".
  • This current flow is shown in FIG. 2E. This process repeats at times “t 3 " and %,” etc. respectively, generating the positive half cycles of the RF square wave from the TTL oscillator 14.
  • FIG. 2C shows the initiation, just after time 'V, of the zero half cycle of the RF square wave from the TTL oscillator 14, followed by the initiation of the second positive half cycle of the TTL RF square wave.
  • the current flows from the 5V dc power supply through switch SB -3, from right to left in the transformer primary winding, and then through switch SB-2 to ground under the "close” command signals from signal S 2 at time “t 2 ,” and then the "open” command signals from signal S 2 at time “t3.”
  • This current flow is also shown in FIG. 2E.
  • This process repeats at times U and t 5 , etc., respectively, generating the negative half cycles of the RF square wave from the TTL oscillator 14.
  • the Buss switches were found to be sufficiently fast in their "tum-on” and "turn-off operation, such that this technique can be used at 100Mz or higher frequencies.
  • FIG. 2D illustrate a super-positioning of the square positive and the negative (i.e., the reverse current flow) portions of the waveforms of FIGS. 2B and 2C into an amplified version of the RF square wave of the TTL oscillator 14.
  • the signal from the H-bridge 10 can be sufficient to drive subsequent semiconductor RF amplifier stages (i.e., MOSFET devices). Tuning the primary winding of the transformer
  • FIG. 3 A more detailed sketch of the design of FIG. 1 is shown in FIG. 3, which includes more detail of both the digital logic circuit controller 12 and the Buss Switch RF power bridge 10.
  • An exemplary digital logic circuit controller 12 in accordance with one embodiment of the invention, utilizes two NAND gates 20, 22 and one AND gate 24 (NAND and AND gates being well known in the art).
  • a potential commercially available NAND chip is model NC75z00/SOT23, and an AND chip is model NC75Z08/SOT23.
  • a NAND gate has a "zero” output if the input is provided with two “one” values at the two input ports; for all other input conditions, a NAND gate has an output value of "one.” It is also well known that an AND gate provides an output value of "one” if the input is provided with two “one” values at the input ports; for all other input conditions, an AND gate has a “zero” output.
  • FIG. 3 and FIGS. 4A-4H when the output RF signals "a" from the TTL oscillator 14 and the longer duration video enabler signal “b” are both “on” and applied to the two inputs of NAND gate 20, no output signal “c” is emitted by NAND gate 20. If signal “b” is off, a signal “c” is emitted by NAND gate 20.
  • the timing sequences shown in FIG. 4 assume the TTL RF square wave oscillator signal "a” turns on at time “ti” and turns off at time “t 2 .” This on/off process for signal “a” can go on continuously, as shown in HG. 4A.
  • the sequence in FIG. 4B assumes that the square wave enabler signal “b” turns on at time t 2 and continues to time tc>, lasting for a time "T.”
  • signal “b” encompasses four zero voltage half cycles of signal "a” and three positive voltage half cycles of signal "a.” It is understood that the enable signal may be asynchronous to the TTL oscillator 14.
  • signal "c" and the RF enabler signal “b” are supplied to NAND gate 22, which in turn can provide signal “d” to drivers Dl and D4 (part of Buss Switches SB-I and SB-4).
  • the output of NAND gate 22 i.e., signal "d" is illustrated by FIG. 4D as a function of time, based on the time behavior of FIGS. 4B and 4C.
  • Dl and D4 can invert the phase of signal "d," thereby providing a signal "f ' to Buss Switches SB-I and SB-4.
  • the time behavior of signal "f is shown by FIG. 4F, which is shown to be inverted 180° from FIG. 4D.
  • Signal / (as shown in FIG. 4F) causes current to flow from the 5 V dc power supply, through switch SB-I, the transformer primary winding, and switch SB-4 to ground. This current flow constitutes the positive voltage half cycle portion of signal "h" out of the transformer secondary winding.
  • a commercially available Buss Switch that has a driver D built in is model 74CBT3125. This identical Buss Switch can be used for SB-I, SB-2, SB-3 and SB-4.
  • Drivers Dl, D2, D3 and D4 can be part of the respective Buss Switches 74CBT3125, as shown in FIG. 3.
  • Signal “c” in FIG. 3 is also connected to both inputs of AND gate 24.
  • AND gate 24 is used for propagation delay equalization between the “e” and the “d” signal paths of FIG. 3. At lower frequencies, AND gate 24 may not be needed.
  • a signal is supplied to both inputs (i.e., if signal “c” has a value of "one” in digital logic language)
  • a signal “e” can be emitted by AND gate 24. If signal “c” is a "zero” value so that no signal is applied to the two inputs, then AND gate 24 can emit no signal (i.e., emits a "zero).
  • FIG. 4E illustrates the time sequence of signal "c” and the corresponding time sequence of signal “e” emitted by AND gate 24.
  • FIG. 4G shows the inversion of signal “e” after it passes through drivers D3 and D4.
  • signal “g” is "on” and turns on Buss Switches SB-4 and SB-2, causing current to flow from the +5 V dc supply, through switch SB-3, from right to left through the transformer primary winding, then through switch SB-2 to ground. This current flow generates the negative half cycle of signal "h”, as shown in FIG. 4H.
  • This process continues for signals "f ' and “g” (i.e., FIGS. 4F and 4G) until enabler signal "b", illustrated by FIG.
  • FIGS. 5A and 5B illustrate oscilloscope waveforms of signals "d” and “e,” respectively, of FIG. 3 and FIGS. 4A-4H operating at 100MHz.
  • the corresponding distorted waveform (i.e., signal "h") out of the secondary winding of the transformer of FIG. 3 is shown by HG. 5C.
  • This signal is provided to the preamplifier 18 of FIG. 3. Operation up to 160MHz and higher is possible using such an H-power bridge concept.

Abstract

L'invention concerne une puissance RF pouvant être délivrée de façon à exciter des décharges de systèmes laser au moyen d'une série de commutateurs à semi-conducteurs rapides disposés en configuration de pont H. Une telle configuration peut amplifier la sortie d'oscillateurs RF pilotés par quartz, au moyen d'un fournisseur de puissance basse tension, réduisant ainsi le nombre d'étapes d'amplification nécessaire tout en obtenant la sortie souhaitée aux fréquences nécessaires. Un amplificateur de puissance qui fonctionne en mode de rendement élevé peut servir de commutateur, convertissant ainsi un signal arrondi produit par un transformateur RF relié entre les deux bras du pont H en un signal de type carré, tout en fournissant la puissance de sortie nécessaire.
PCT/US2006/026644 2005-07-29 2006-07-06 Amplification de signaux oscillateurs rf ttl a logique numerique et technologie de commutation de puissance pour des fournisseurs de puissance rf laser co2 WO2007018884A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US70357605P 2005-07-29 2005-07-29
US60/703,576 2005-07-29
US11/478,222 US20070031156A1 (en) 2005-07-29 2006-06-29 Amplification of TTL RF oscillator signals with digital logic and power switching technology for CO2 laser RF power supplies
US11/478,222 2006-06-29

Publications (1)

Publication Number Publication Date
WO2007018884A1 true WO2007018884A1 (fr) 2007-02-15

Family

ID=37460010

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/026644 WO2007018884A1 (fr) 2005-07-29 2006-07-06 Amplification de signaux oscillateurs rf ttl a logique numerique et technologie de commutation de puissance pour des fournisseurs de puissance rf laser co2

Country Status (2)

Country Link
US (1) US20070031156A1 (fr)
WO (1) WO2007018884A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8654805B2 (en) 2011-08-23 2014-02-18 Coherent, Inc. Apparatus and method for balancing combined RF power-supplies for driving a CO2 gas-discharge laser

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4580111A (en) * 1981-12-24 1986-04-01 Harris Corporation Amplitude modulation using digitally selected carrier amplifiers
US4949050A (en) * 1989-09-12 1990-08-14 Harris Corporation RF power amplifier system having amplifier protection
US5612647A (en) * 1995-06-30 1997-03-18 Harris Corporation RF power amplifier system having an improved drive system
US6211735B1 (en) * 2000-01-21 2001-04-03 Harris Corporation RF power amplifier having improved power supply for RF drive circuits
US6396340B1 (en) * 2000-09-22 2002-05-28 Harris Corporation RF power amplifier system employing AC-DC power supplies and RF combining
US20040075499A1 (en) * 2000-09-12 2004-04-22 Dupuis Timothy J. PF power detector
US20040085145A1 (en) * 2002-11-05 2004-05-06 Magneto-Inductive Systems Limited Dynamically tuned amplifier for frequency shift keyed signals

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5027071A (en) * 1990-03-05 1991-06-25 General Electric Company Method of, and apparatus for, NMR slice selection
EP0904616B1 (fr) * 1997-03-14 2008-12-03 Demaria Electrooptics inc Laser a guide d'ondes excite par hf
US6788722B1 (en) * 2000-07-10 2004-09-07 Coherent, Inc. High power waveguide laser
US6697408B2 (en) * 2001-04-04 2004-02-24 Coherent, Inc. Q-switched cavity dumped CO2 laser for material processing

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4580111A (en) * 1981-12-24 1986-04-01 Harris Corporation Amplitude modulation using digitally selected carrier amplifiers
US4949050A (en) * 1989-09-12 1990-08-14 Harris Corporation RF power amplifier system having amplifier protection
US5612647A (en) * 1995-06-30 1997-03-18 Harris Corporation RF power amplifier system having an improved drive system
US6211735B1 (en) * 2000-01-21 2001-04-03 Harris Corporation RF power amplifier having improved power supply for RF drive circuits
US20040075499A1 (en) * 2000-09-12 2004-04-22 Dupuis Timothy J. PF power detector
US6396340B1 (en) * 2000-09-22 2002-05-28 Harris Corporation RF power amplifier system employing AC-DC power supplies and RF combining
US20040085145A1 (en) * 2002-11-05 2004-05-06 Magneto-Inductive Systems Limited Dynamically tuned amplifier for frequency shift keyed signals

Also Published As

Publication number Publication date
US20070031156A1 (en) 2007-02-08

Similar Documents

Publication Publication Date Title
US7274266B2 (en) Radio frequency excitation arrangement
US5023566A (en) Driver for a high efficiency, high frequency Class-D power amplifier
KR100814222B1 (ko) 스위치 모드 ｒｆ 전력 증폭기들을 위한 구동 회로들
US20060262843A1 (en) Digital amplifier, pulse width modulator thereof and method for reducing pop noise for the same
US8058927B2 (en) Amplifier modulation method and apparatus
WO2002045254A1 (fr) Amplificateur haute-frequence et melangeur haute frequence
JP2008124715A (ja) 高周波電力増幅器
JPH11204850A (ja) ピエゾ駆動回路
JP6219057B2 (ja) 高周波電源
US7965150B2 (en) Differential oscillation apparatus and modulator
JP2009065663A (ja) 高電圧、高速、高パルス繰返し数のパルス発生器
WO2007018884A1 (fr) Amplification de signaux oscillateurs rf ttl a logique numerique et technologie de commutation de puissance pour des fournisseurs de puissance rf laser co2
JP4478112B2 (ja) 高周波電源回路
Rao et al. A high‐voltage solid‐state Marx generator with adjustable pulse edges
US6320460B1 (en) Class D amplifier
JP2005500654A (ja) デューティサイクル変調を用いてｈｉｄランプを動作させる方法
JP3130039B2 (ja) 大電力スイッチ・モード無線周波増幅の方法及び装置
KR200150912Y1 (ko) 전력 모스 전계 효과 트랜지스터의 제어회로
EP1088392B1 (fr) Dispositif de communication
US6229392B1 (en) High power switch-mode radio frequency amplifier method and apparatus
JP2016072001A (ja) 高周波電源
JP2007188836A (ja) 高周波電源装置
JP2018088819A (ja) 高周波電源
Sokal RF power amplifiers-classes A through S
JP5419792B2 (ja) 高周波増幅装置

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application
NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 06786708

Country of ref document: EP

Kind code of ref document: A1