WO2007004612A1 - Method of producing substrate under controlling organic matter concentration in stripping liquor - Google Patents

Method of producing substrate under controlling organic matter concentration in stripping liquor Download PDF

Info

Publication number
WO2007004612A1
WO2007004612A1 PCT/JP2006/313234 JP2006313234W WO2007004612A1 WO 2007004612 A1 WO2007004612 A1 WO 2007004612A1 JP 2006313234 W JP2006313234 W JP 2006313234W WO 2007004612 A1 WO2007004612 A1 WO 2007004612A1
Authority
WO
WIPO (PCT)
Prior art keywords
concentration
substrate
tank
stripping
organic substance
Prior art date
Application number
PCT/JP2006/313234
Other languages
French (fr)
Japanese (ja)
Inventor
Takashi Tsuda
Masanao Sumita
Katsuyoshi Harada
Original Assignee
Toagosei Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toagosei Co., Ltd. filed Critical Toagosei Co., Ltd.
Priority to JP2007524056A priority Critical patent/JPWO2007004612A1/en
Publication of WO2007004612A1 publication Critical patent/WO2007004612A1/en

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/42Stripping or agents therefor
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04Cleaning involving contact with liquid
    • B08B3/08Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing

Definitions

  • the present invention relates to a stripping process in which a stripping solution is brought into contact with a coating material on a substrate to strip the coating material from the substrate, and a substrate material having at least a part of the coating material peeled off by the stripping step. And a removing step of removing a residue of an organic substance derived therefrom.
  • the present invention relates to a substrate manufacturing method capable of managing the organic residue on the substrate after the removal process.
  • Patent Document 1 Japanese Patent Laid-Open No. 2003-203856
  • Patent Document 2 JP 2003-330206 A
  • Patent Document 3 Japanese Patent Laid-Open No. 2003-305418
  • a cyclic carbonate having low reactivity with ozone is used as a stripping solution.
  • a stripping solution containing a dissolved organic material derived from the coating material hereinafter referred to as “dissolved organic material”
  • dissolved organic material a stripping solution containing a dissolved organic material derived from the coating material
  • Dissolved organic matter composed of a high molecular weight substance is converted into a low molecular compound by oxidative decomposition in an ozone treatment tank, and the stripping solution containing the low molecular weight compound is a stripping liquid for stripping and dissolving the coating material on the substrate again.
  • the low molecular weight compound has an extremely high limit concentration (hereinafter referred to as “acceptable concentration”) that adversely affects the stripping performance, compared to an organic material having a high molecular weight derived from an undegraded coating material. Therefore, even a stripping solution containing a low molecular compound at a high concentration can ensure stable and high stripping performance. As a result, the amount of stripping solution consumed can be greatly reduced, improving the economy and reducing the burden on the environment.
  • the concentration of the dissolved organic substance composed of a high molecular compound or the decomposed low molecular compound in the peeling liquid exceeds the allowable concentration, the peeling performance may be deteriorated, Contamination of the surface, that is, the coating substance residue on the surface of the substrate reattaches, resulting in defective products and a decrease in product yield.
  • the concentration of organic substances derived from the coating substance was measured by measuring the absorbance of ultraviolet rays, etc., and the concentration was controlled.
  • concentration control by absorbance measurement was not possible.
  • the present invention has been made in view of the above-described problems and problems, and a first object is to provide a peeling step in which the coating material on the substrate is brought into contact with the coating liquid to separate the coating material from the substrate.
  • the organic substance derived from the coating substance from the substrate from which the coating substance has been peeled off at least partially by the peeling process A method for producing a substrate, which can manage organic residues on the substrate subjected to the removal step and improve the yield of the substrate. There is to do.
  • the second purpose is to produce a substrate that can also efficiently use the stripping solution, greatly reduce the consumption of the stripping solution, improve the economy, and reduce the burden on the environment. It is to provide a method.
  • the peeling step includes
  • the removal step includes
  • the residue of the organic matter on the substrate on which the removing step has been performed is not more than a predetermined control value.
  • a contact tank that receives a stripping solution in which the coating material is peeled off and an organic substance derived from the coating material is dissolved; a processing tank in which the stripping solution in which the organic matter is dissolved in the contact tank is used as the regenerative stripping solution;
  • a circulation type peeling device having The organic substance concentration in the stripping solution of the circulating stripping device is
  • Data on the inflow speed at which the organic matter dissolved in the stripping solution flows into the contact tank, data on the discharge speed of the stripping liquid discharged from the circulation type stripping device, and the stripping liquid is the contact tank force.
  • Data storage means storing data including outflow rate data flowing into the tank;
  • the organic matter concentration data in the contact tank, the inflow speed data, the discharge speed data, the outflow speed data, and the regenerative stripping solution are transferred from the treatment tank to the contact tank. From the data of the inflow velocity flowing into the tank and the data of the inflow velocity at which the newly replenished stripping liquid flows into the contact tank, the inside of the contact tank at the third time after a unit time has elapsed from the second time.
  • a concentration calculating means including a second concentration calculating means for calculating an organic substance concentration
  • the organic substance concentration in the contact tank at the third time is set as the organic substance concentration in the contact tank at the second time, and the organic substance concentration in the contact tank is Concentration calculating means for repeatedly calculating a predetermined number of times;
  • Output means for outputting a signal representing the organic substance concentration calculated by the concentration calculating means
  • FIG. 1 is a schematic view of a circulation type peeling device for explaining a first embodiment of the present invention.
  • FIG. 2 is a schematic configuration diagram of an organic matter concentration calculation apparatus applied to the first embodiment of the present invention.
  • FIG. 3 is a flow chart showing the procedure for calculating the organic substance concentration in the organic substance calculating means 300 of FIG.
  • FIG. 4 is a flowchart showing a procedure for causing a computer to execute a program applied to the first embodiment of the present invention.
  • FIG. 5 is a schematic diagram of another circulation type peeling apparatus applied to the first embodiment of the present invention.
  • FIG. 6 is a schematic view of a circulation type peeling apparatus for explaining a second embodiment of the present invention.
  • FIG. 7 is a schematic view of another circulation type peeling apparatus applied to the second embodiment of the present invention.
  • a step of performing a treatment for using a stripping solution in which an organic substance derived from the stripped coating material is dissolved as a reclaimed stripping solution, and a newly replenished stripping solution and regenerative stripping Removing the coating material from the substrate by bringing the liquid into contact with the coating material on the substrate, and a step of washing the surface of the substrate from which the coating material has been removed in the peeling step with water, and cleaning. And a removing step including drying the dried substrate with dry air.
  • the method for producing a substrate according to the present invention includes:
  • a stripping step in which a stripping solution is brought into contact with the coating material on the substrate to strip the coating material from the substrate, and a substrate force from which the coating material has been stripped at least partially by the stripping step is a residue of organic matter derived from the coating material. And a removing step for removing the substrate.
  • the peeling step includes
  • Including The removal step includes
  • the organic residue on the substrate on which the removal step has been performed is a predetermined control value or less.
  • a replenishing stripping solution is used to peel the coating material from the substrate by contacting the coating material on the substrate using the regenerative stripping solution. It can be very small. As a result, it becomes possible to use the stripping solution efficiently, and the consumption of the stripping solution can be greatly reduced, the economic efficiency can be improved, and the burden on the environment can be reduced.
  • the organic residue on the substrate after the removal step is below a predetermined control value, the number of organic residues on the substrate was adopted as the quality control standard of the substrate as a product. In this case, the product yield can be greatly improved, and continuous production is also possible within the quality control standards.
  • a contact tank that receives a peeling liquid in which the coating substance is peeled and an organic substance derived from the coating substance is dissolved, and a peeling liquid in which the organic substance in the contact tank is dissolved are used.
  • a circulation type stripping device having a treatment tank in which the processing to make a reclaimed stripping solution is used, and the organic matter concentration in the stripping solution of the circulating type stripping device is the inflow rate at which the organic matter dissolved in the stripping solution flows into the contact bath.
  • Data storage means for storing data including data, data on the discharge speed of the release liquid discharged from the circulation type peeling device, and data on the outflow speed at which the release liquid flows out from the contact tank to the treatment tank; At the first time, data on the concentration of organic matter in the contact tank, data on the inflow rate, data on the discharge rate, and data on the outflow rate
  • the first concentration calculating means for calculating the organic substance concentration in the contact tank at the second time after a unit time has elapsed from the first time, and the organic substance concentration data in the contact tank at the second time. Inflow rate data, discharge rate data, outflow rate data, inflow rate data where the regenerative stripping liquid flows from the treatment tank to the contact tank, and newly replenished stripping liquid into the contact tank.
  • a concentration calculation means including a second concentration calculation means for calculating an organic substance concentration in the contact tank at a third time after a unit time has elapsed from the second time, based on the inflow velocity data flowing in;
  • the organic substance concentration in the contact tank at the third time is set as the organic substance concentration in the contact tank at the second time, and the organic substance concentration in the contact tank is repeatedly calculated a predetermined number of times.
  • the calculation unit has an output unit that outputs a signal representing the organic substance concentration calculated by the calculation unit.
  • the concentration calculating means when calculating the concentration of the dissolved organic matter based on the stored data, the change in the concentration of the dissolved organic matter with the operation time after the start of peeling is complicated. It is possible to calculate the organic substance concentration easily and accurately without calculating based on the calculation of physical properties, and at the same time, it is possible to predict changes in the organic substance concentration.
  • stored data refers to data on the concentration of organic matter in the tank, data on the inflow rate at which organic matter dissolved in the stripping liquid flows into the contact tank, and stripping liquid is a circulating stripping device.
  • the discharge rate data of the stripping solution discharged from the tank, the outflow rate data from which the stripping solution flows out from the contact tank to the treatment tank, the inflow rate data from which the reclaimed stripping solution flows into the contact tank, and a new replenishment This is data such as the inflow rate at which the stripping solution flows into the contact tank, and is not limited to the data input and stored when calculating the organic substance concentration.
  • Stored data is also included. Therefore, it is not limited to the assumed value and may be an actual measurement value.
  • the production manager since it has data storage means, it can only predict changes in the organic matter concentration in the stripping solution when the assumed values such as the organic matter concentration data directly input from the keyboard touch panel etc. are stored. In addition, it can be used for process examination based on the predicted results, and even in various operating conditions, for example, when the type of substrate is changed, the production manager instructs simple and appropriate operating conditions. It becomes possible. On the other hand, when measured values of instrumentation equipment provided in the stripping device are input and stored, changes in the organic matter concentration in the stripping solution can be predicted even while the device is operating, and stripping is possible. It is easy to manage the stripping solution in the equipment.
  • the output means is provided, by providing a display device on the output means, the operator can visually recognize the change in the concentration of organic substances in the stripping solution, and can reduce the frequency of analysis and set up the work such as liquid removal. It is possible to improve work efficiency.
  • a recording medium such as paper or CDROM, it becomes easy to create operational instructions and refer to past calculation results.
  • the calculation device incorporates an organic concentration analyzer
  • concentration control with high accuracy becomes possible.
  • the substrate manufacturing method of the present invention it is possible to perform unattended operation of a circulation type peeling apparatus equipped with a calculation apparatus, and it is possible to fully automate.
  • the invention according to the present invention can also be applied to dissolution of a general organic film such as an oil film, a coating film, an organic contamination coating, and fine particles on the substrate.
  • a general organic film such as an oil film, a coating film, an organic contamination coating, and fine particles on the substrate.
  • the calculation device is a circulation type peeling device that performs processing for converting the organic substance concentration calculated by the concentration calculating means and the peeling liquid in which the organic substance derived from the coating substance is dissolved into a regenerative peeling liquid.
  • Correction coefficient storage means for storing the correction coefficient obtained based on the measured value of organic substance concentration at, and the concentration calculation means calculates the corrected organic substance concentration based on the calculated organic substance concentration and the correction coefficient. It is preferable to calculate the organic substance concentration in the contact tank and the treatment tank based on the corrected organic substance concentration.
  • the correction coefficient storage unit since the correction coefficient storage unit is provided, the calculation value of the organic substance concentration in the stripping solution is corrected to match the actual measurement value using a known method such as the least square method. Therefore, the correction coefficient can be identified and stored, and the correction coefficient can be stored in a database in advance within the condition range in which the apparatus can be manufactured. As a result, it is possible to easily determine the optimum operating conditions in consideration of productivity and economy by using a correction coefficient stored in a database for each type of substrate.
  • the organic substance concentration in the contact tank and in the treatment tank It is no longer necessary to calculate the organic substance concentration based on the calculation of physical properties just by making the calculation possible, and the organic substance concentration can be calculated easily and quickly.
  • the calculation apparatus further includes a control unit that controls an operation amount including a flow rate to the contact tank and the processing tank based on the output signal of the output unit force. .
  • the control means since the control means is provided, the operation amount such as the flow rate (inflow amount'outflow amount), pressure, temperature, etc. to the contact tank and the processing tank is controlled within the organic substance concentration management range. It becomes possible to automatically control the actual process. As a result, it is possible to manage the concentration of the organic matter simply and safely without relying on the intuition and experience of the equipment operator for changing the operating conditions and extending the life of the stripping solution.
  • the stripping solution contains ethylene carbonate as a main component, and in the stripping step, a stripping solution in which an organic substance derived from the stripped coating material is dissolved is used as a reclaimed stripping solution by ozone treatment.
  • the predetermined control value is 1.5 pieces / m 2 .
  • the substrate is managed by adopting a management value of 1.5 / m 2 regarding the residue of organic matter on the substrate on which the removal process has been performed as an evaluation standard for the manufactured substrate.
  • the productivity (yield) of the substrate which is a product, can be improved.
  • it if it is within the range of the control values adopted, it will be possible to operate the circulating stripper equipped with a calculation device unattended, and the stripping process can be fully automated.
  • a contact tank in which the coating substance is peeled off by contacting the coating substance on the substrate to dissolve in the peeling liquid as an organic substance derived from the coating substance, and a peeling liquid in which the organic substance in the contact tank is dissolved A program for causing a computer to calculate the concentration of organic substances in the stripping solution of a circulating stripping device having a treatment tank that is used as a recycled stripping solution.
  • the second unit time has elapsed from the first time.
  • the organic matter concentration data in the contact tank, the inflow speed data, the discharge speed data, the outflow speed data, and the regenerative stripping solution are transferred from the treatment tank to the contact tank.
  • Concentration of organic matter in the contact tank at the third time after the second time from the data of the inflow speed flowing into the tank and the data of the inflow speed at which the newly replenished stripping solution flows into the contact tank A second concentration calculation step for calculating The organic substance concentration in the contact tank at the third time is set as the organic substance concentration in the contact tank at the second time, and the organic substance concentration in the contact tank in the second concentration calculation step is repeatedly calculated a predetermined number of times. 3 concentration calculation steps;
  • the stripping solution is a cyclic carbonate or cyclic ester
  • the circulation type stripping device performs ozone treatment on the stripping solution in which the organic substance derived from the coating substance is dissolved in the processing tank, and stores it.
  • the calculated data includes a correction coefficient for correcting the calculated organic substance concentration to an actual measurement value of the organic substance concentration in the circulation type stripping apparatus that performs ozone treatment in the treatment tank, and calculates the organic substance concentration in the contact tank.
  • the peeling step is a step in which the coating material on the substrate is brought into contact with the stripping solution to strip the coating material from the substrate, and the stripping solution in which the organic material derived from the stripped coating material is dissolved is used.
  • a reclaimed stripper is treated, and the newly replenished stripper and reclaimed stripper are brought into contact with the coating material on the substrate to strip the coating material from the substrate.
  • the removal step is a step of removing organic residue derived from the coating material in addition to the strength of the substrate from which the coating material has been peeled off by the peeling step. In this process, the surface is washed with water, and the washed substrate is dried with dry air.
  • a coating material is peeled from the substrate by bringing a peeling solution into contact with the film material on the substrate using a circulation type peeling device.
  • FIG. 1 shows a schematic diagram of the circulation type peeling apparatus for explaining the present embodiment.
  • the circulation type peeling apparatus is also configured with a contact tank 10, an ozone treatment tank 20, a deaeration tank 30, a regenerated liquid tank 40, a new liquid tank 50, a contact chamber 60, and a force.
  • the contact tank 10 is a chamber for temporarily storing the stripping liquid flowing out from the chamber (when contact is made by nozzle supply) that performs the contact processing of the stripping liquid on the coating material coated on the substrate. It is. Further, the contact tank 10 may be a tank (in the case where the contact is by dipping) in which the stripping liquid is contacted with the coating material on the substrate. Furthermore, a plurality of contact tanks can be used in combination in order to ensure peeling of the coating substance from the substrate.
  • the peeling liquid is supplied from the nozzle to the surface of the organic film to form a liquid film of the peeling liquid.
  • the method of moving and moving is advantageous in terms of stripping speed.
  • nozzle force The amount of stripping solution supplied to the organic coating surface is determined by the balance between the capacity of the stripping device and the circulation rate of the stripping solution. Is also big.
  • ultrasonic waves are applied when the peeling liquid is brought into contact with the coating substance on the substrate.
  • the ozone treatment tank 20 is a tank for ozone treatment of the stripping solution after the contact treatment.
  • the ozone treatment is performed in the ozone treatment tank 20 and the regenerated stripping solution.
  • the amount of stripping solution used can be reduced, and the cost can be greatly reduced.
  • Typical examples of the stripping solution to which ozone treatment can be applied are organic compounds having a carbonate group or an ester group, and specifically, for example, ethylene carbonate, propylene carbonate, and ⁇ -butyrolatatone can be suitably used.
  • Tank 20 is provided separately and independently.
  • the degassing tank 30 is a tank that removes dissolved ozone in the liquid by publishing the effluent of the ozone treatment tank 20 with nitrogen gas or the like.
  • the regenerated liquid tank 40 is a tank for temporarily storing the regenerated stripping liquid from the deaeration tank 30.
  • the new liquid tank 50 is a tank that supplies pure stripping liquid to replenish the stripping liquid that has been consumed.
  • the flow of the stripping solution in the circulation type stripping apparatus is classified into three systems: a circulation system, an inflow system, and an outflow system.
  • the circulation system is a system in which a stripping solution containing a dissolved organic substance composed of a high molecular compound and a stripping solution in which an oxidatively decomposed low molecular weight compound is dissolved circulate.
  • a stripping solution containing a dissolved organic substance composed of a high molecular compound and a stripping solution in which an oxidatively decomposed low molecular weight compound is dissolved circulate.
  • it consists of ozone treatment tank 20, degassing tank 30, regenerated liquid tank 40, contact tank 10 and its connecting pipe, pump, ozone generator, etc. Is done.
  • the inflow system is a system in which the supply substance is supplied into the external force circulation system.
  • the supply substance is dissolved in the contact tank 1, and the pure organic substance supplied from the new liquid tank through the pipe.
  • the outflow system is a system in which substances flow out from the circulation system, and the outflow substances are the mist-like stripping liquid that is exhausted from the contact chamber 60 and the substrate after stripping by the stripping liquid in the contact chamber 60.
  • the outflow substances are the mist-like stripping liquid that is exhausted from the contact chamber 60 and the substrate after stripping by the stripping liquid in the contact chamber 60.
  • the temperature of the stripping solution in the contact tank 10 or the regenerating solution tank 40 is preferably kept high in order to maintain the more stable stripping performance, which is desirable from the viewpoint of stripping speed.
  • the preferred liquid temperature varies depending on the type of stripping solution, but when a polar organic solvent is used, 40 to 150 ° C is preferred, and 50 to 120 ° C is particularly preferred.
  • the peeling speed decreases, and when the liquid temperature is above the preferred liquid temperature range, the amount of the stripping liquid consumed increases due to an increase in the displacement, and the substrate is easily damaged.
  • the stripping solution temperature it is preferable to control the stripping solution temperature to 70 to 90 ° C in order to reduce organic residue derived from the coating substance. . This is because when the temperature is lower than 70 ° C, the peelability and solubility of the organic matter tend to decrease and the residue tends to increase. On the other hand, when the temperature exceeds 90 ° C, the metal film on the substrate is corroded. This is because the yield tends to decrease because the defect tends to increase and the number of defects tends to increase.
  • the temperature of the stripping solution in the ozone treatment tank 20 it is preferable to set the point of the solubility of ozone at a lower level than other tanks. Specifically, 20 to 100 ° C. is preferable, and 40 to 80 ° C. is particularly preferable.
  • the decomposition rate of acid-sodium decomposition by ozone for dissolved organic matter varies depending on the type of organic matter, it decomposes to low molecular weight compounds with a molecular weight of 100 or less when the decomposition proceeds sufficiently.
  • FIG. 2 is a schematic configuration diagram illustrating the entire organic substance concentration calculation apparatus according to the present embodiment.
  • this apparatus includes a data storage means 100, a correction coefficient storage means 200, a concentration calculation means 300, an output means 400, and a control means 500.
  • the data storage means 100 stores data on the concentration of organic matter in the tank, data on the inflow rate at which organic matter dissolved in the stripping solution flows into the contact bath, and the stripping solution from the contact bath.
  • These data are not limited to the data input and stored when calculating the organic substance concentration, but also include data already stored before the calculation. Therefore, these data are not limited to the assumed values. When assumed values such as organic substance concentration data directly input from keyboards, touch panels, etc., which are actually measured values, are stored.
  • the correction coefficient storage means 200 uses the ozone treatment tank 20 to perform the ozone treatment in the ozone treatment tank 20 by calculating the organic matter concentration in the stripping solution associated with the operation time after the start of stripping without considering complicated ozone decomposition.
  • a correction coefficient is stored for correction to match the measured value of the organic substance concentration in the circulation type stripping apparatus that has been subjected to. This is because when organic substances dissolved in the stripping solution are decomposed into low molecular weight compounds by ozone treatment, the organic molecules absorb oxygen due to oxidation, so the weight usually increases.
  • the amount of change in weight is calculated theoretically because it varies depending on the type of material, the degree of organic film modification (due to etching, ashing, ion implantation, etc.), and the conditions of ozone treatment (ozone concentration, treatment time, temperature, etc.) Have difficulty. Therefore, the organic substance concentration is calculated by correcting the organic substance concentration calculated based on a virtual process in which the ozone treatment is not performed by the concentration calculating means 300 described later using a correction coefficient.
  • the concentration calculation means 300 includes a first concentration calculation means 310 and a second calculation means 320 as shown in FIG.
  • the organic substance concentration can be calculated by calculating the mass balance of the stripping solution in the process in the circulation type stripping device. This calculation method will be described with reference to FIG. 3 which is a flowchart showing the organic substance concentration calculation by the concentration calculation means 300.
  • the amount of the stripping solution flowing in the circulation system is constant, so from FIG. 1, the amount of stripping solution containing dissolved organic matter per unit time flows into the contact tank 10 and the regeneration rate.
  • the stripping device force is also equal to the total amount of the stripping solution discharged and the amount of the stripping solution flowing from the contact tank 10 to the treatment tank 20.
  • the volume of the contact tank 10, the ozone treatment tank 20, the degassing tank 30, the regenerated liquid tank 40, and the new liquid tank 50 are set to VI, V2, V3, V4, and V5, respectively, and the organic matter concentration
  • the “%” is Dl, D2, D3, D4, D5
  • the inflow rate of organic matter dissolved in the stripper “71 ⁇ 11” is 1 ⁇
  • the outflow rate “LZmin” from the contact tank is S + R
  • the inflow rate of the newly replenished stripping solution “L The flow rate of the regenerative stripping solution is S + R “LZmin”, and the discharge rate to the outside of the device is R + L “LZmin”.
  • the organic substance concentration calculation in the concentration calculation means 300 is performed by the first concentration calculation means 310 when calculating by the initial value, and by the second concentration calculation means 320 when calculating thereafter.
  • the organic substance concentration in each tank can be calculated in the same way.
  • input data necessary for organic substance concentration calculation is read from the data storage means 100 and set as an initial value (S10).
  • the data to be read is the maximum calculation time, the volume of each tank: V1 to V5 “L”, the initial value “%” of the organic substance concentration D1 to D5 of each tank, the correction coefficient, and the peeling on the substrate.
  • the time t exceeds the maximum calculation time (Sl l). If it is determined that time t does not exceed the maximum calculation time (YES), unit time ⁇ is added to time t (S12), and organic matter concentrations D1 to D4 in each tank after unit time are calculated. (S13-S20).
  • the number of times of repeated calculation using the second concentration calculation means is (time until the maximum calculation time) Z (unit time) 2. For example, if the time until the maximum calculation time is ⁇ , the first concentration calculation means calculates the organic matter concentration in the tank at the second time when the unit time ⁇ has elapsed from the first time, and the repeated calculation is Not performed.
  • the concentration is calculated by the concentration calculation means 2 and is not repeated.
  • the second concentration meter is used to calculate the organic substance concentration in the tank at the time when the unit time ⁇ has passed since the time when the unit time ⁇ has passed since the third time. Repeat the calculation once using the calculation means.
  • the organic substance inflow amount A into the specified tank is calculated (S13).
  • the organic substance inflow A of the contact tank 10 can be calculated by R + D4 X (S + R + DZ100.
  • the organic substance outflow B of the specified tank is calculated (S14).
  • the organic matter effluent B can be calculated by Dl X ((S + R) + (R + L)) ZlOO, and then the organic matter increase C in the specified tank is calculated (S15).
  • the organic matter increase amount C can be calculated by A- B.
  • the organic matter concentration D in the identified tank is calculated (S16) .
  • the organic matter concentration D in the contact tank 10 is (the organic matter in the contact tank 10 at time t) Calculate as (concentration) + CX VI X 100.
  • the organic matter concentration is calculated to determine whether or not the tank is the ozone treatment tank 20 (S17). 0 When it is determined that the tank is the ozone treatment tank 20 (YES), the calculated organic matter is calculated. The density is corrected by the correction coefficient (S18). As a result, the organic substance concentration in the ozone treatment tank 20 after the ozone treatment can be calculated. Then proceed to S19. When it is determined that the tank is a tank other than the ozone tank 20 (NO), the process proceeds to S19.
  • the calculated value of the organic substance concentration in the identified tank is stored (S19). So After that, it is determined whether or not the organic substance concentration is calculated for all the tanks (S20). If it is determined that the organic matter concentration is being calculated for all tanks (YES), return to S11 to repeat the organic matter concentration calculation. When it is determined that there is a tank that has not been calculated (NO), the process returns to S13 for calculation for all the tanks.
  • the output unit 400 outputs a signal representing the organic substance concentration calculated by the concentration calculation unit 300. Therefore, by providing a display device in the output means, the operator can visually recognize changes in the organic substance concentration in the stripping solution, and can reduce the frequency of analysis and set up operations such as draining, thereby improving work efficiency. In addition, recording on a recording medium such as paper or CDROM makes it easy to create operational instructions and to reference past calculation results.
  • the control means 500 controls the manipulated variables such as the flow rate, pressure, temperature, etc. to the contact tank and the treatment tank within the organic substance concentration management range. Therefore, automatic control is possible based on the difference between the measured organic substance concentration and the calculated organic substance concentration.
  • the flow rate of dissolved organic matter into the contact tank 10 and the discharge flow rate of the stripping solution to the outside of the device can be controlled directly or indirectly by adjusting the manipulated variables such as flow rate, pressure, temperature, etc. .
  • the discharge flow rate of the stripping solution to the outside of the apparatus continuous or periodic discharge of the stripping solution can be mentioned.
  • the inflow rate of organic matter into the contact tank 10 the number of substrates processed per unit time can be increased or decreased.
  • FIG. 4 is a flowchart showing a procedure that the computer executes the organic substance concentration calculation program of this embodiment.
  • the program first causes the computer to execute a process of reading the data stored in the data storage means 100 and the correction coefficient storage means 200 (S30), and then the organic substance concentration The organic substance concentration is calculated by the calculation means 300 (S31), and a signal representing the calculated organic substance concentration is output (S32) —the series of processes is executed.
  • Stripper High purity EC (EC-H) manufactured by Toa Gosei was used as ethylene carbonate.
  • Substrate A glass plate for liquid crystal panels of size 730 x 920mm 2 , aluminum as the gate electrode material is formed by sputtering, and then a cresol novolac resist resin is applied to the film i. ⁇ A substrate that had been developed and then etched and ashed with aluminum was used as the substrate. The resist resin coverage on the substrate is 50%.
  • peeling device and operating conditions As shown in Fig. 5, a circulation type peeling device with two contact tanks was used. The capacity of each tank is 40, 40, 40, 20, 40 L on the river page of the contact tank 10, the contact tank 11, the ozone treatment tank 20, the degassing tank 30, and the regenerated liquid tower 40. Degassing tower 30 power flow to regeneration liquid tower 40 is 20LZmin, resist inflow volume is 0.5mLZ substrate, stripping solution carry-out amount is 13.4mLZ substrate, mist-like stripping solution is carried out by exhaust Is l ⁇ 4LZHr. The stripping solution taken out by the substrate is discharged as waste water after the cleaning process.
  • the mist-like stripping solution in the exhaust can be reduced to lL / Hr by installing a cooling tower (maintained at 40 ° C) above the chamber where the contact treatment is performed.
  • the total amount of stripping liquid in the exhaust and the stripping liquid brought out together with the substrate is the consumption of the stripping liquid.
  • the stripping liquid for consumption is regularly replenished from the new liquid tank 50, and the liquid volume in the stripping device is kept constant.
  • the temperature of the stripping solution in each tank was set to 80 ° C for the contact tank 10 and regenerated liquid tank 40, 60 ° C for the ozone treatment tank 20 and degassing tank 30, and 50 ° C for the new liquid tank 50.
  • Ozone-containing oxygen gas with a concentration of 200 mgZL was introduced into the ozone treatment tank at a flow rate of 15 LZmin by a discharge ozone generator using oxygen gas as a raw material.
  • the substrate processing speed was set to 60 sheets ZHr, and a cooling tower was installed, and the operation was performed with the removal liquid removal amount lLZHr by exhaust. Under this condition, the calculated concentration of resist in the regenerated solution tank 40 (resist concentration calculated assuming that ozone decomposition does not occur) and the actual concentration of resist decomposition products (carboxylic acid and carboxylic acid ester) are , Estimated value after 3 days, 5 days later Z Measured value, 0.0043 / 0.0065, 0. 0103/0. 0152, 0. 0141/0. 021 The correction factor was determined to be 1.51. Note that the unit of organic substance concentration is resist kgZL.
  • the allowable concentration of the resist decomposition product was divided into 0.0216 resist per kgZL.
  • the inside of the peeling device was stopped every 4 days of operation time, and the entire amount of the peeling solution in the device was replaced with a new solution. This liquid exchange operation took 8 hours.
  • the substrate processing speed is 60 sheets ZHr
  • the stripper is operated in a cycle of 4 days of machine operation + 8 hours of liquid replacement
  • the substrate throughput per month is 39,877 sheets
  • Consumption is 2445L, which is 61mL in terms of consumption per substrate.
  • the substrate processing speed was reduced by half to 30 sheets ZHr, and liquid separation was not performed, and stripping was performed by continuous operation.
  • Table 2 shows the results of calculation of resist degradation product concentration under these conditions (correction coefficient is 1.51) and measured values.
  • the equilibrium concentration was 0.00195 kgZL, so it was expected that the allowable concentration would not be exceeded even if the operation time was extended.
  • the force that continued operation of the peeling device until 30 days.
  • Table 2 it can be seen that the organic substance concentration was calculated with high accuracy by comparing the measured resist decomposition product concentration values with the calculated organic concentration values on the 5th, 10th, and 15th working days.
  • the substrate processing amount per month was 21,600
  • the total consumption of liquid stripper liquid per month was 1009L
  • the consumption per substrate was 47mL, which was approximately 24 compared to the test conditions.
  • % Stripping solution was saved. Furthermore, the complicated stripping solution replacement work can be omitted and the number of work steps can be reduced.
  • the substrate processing speed was returned to 60 sheets ZHr, the cooling tower was made shorter than in Example 1, and the amount of exfoliated liquid taken out by exhaust was increased to 1.8 LZHr.
  • Table 3 shows the calculated results and actual measured values of the resist degradation product concentration under these conditions.
  • the calculated equilibrium concentration was 0.0210 kgZL. Therefore, it was expected that the allowable concentration would not be exceeded even if the operation time was extended.
  • the stripping machine continued to run for 30 days, but there was no problem with the stripping performance.
  • Table 3 as in Example 1, comparing the measured resist decomposition product concentration values with the calculated organic material concentration values on the 5th, 10th, and 15th working days, the organic concentration was calculated accurately. I understand that.
  • the substrate processing volume per month is 43,200
  • the total consumption of the liquid stripping solution is 1875L
  • the consumption per substrate is 43mL, which is about 29% peeling compared to the test conditions.
  • the liquid was saved and the production volume was improved by about 7%.
  • the work man-hour associated with the stripping solution replacement work is not necessary.
  • Table 1 below shows the operating conditions and stripping solution consumption described in Comparative Example, Example 1 and Example 2.
  • the organic substance residue derived from the coating material is removed from the substrate from which the coating material has been at least partially peeled by the peeling step using a circulation type peeling device.
  • the circulation type peeling device, the organic matter concentration calculation device, and the organic matter concentration calculation program used in the first embodiment described above are further used by the washing layer 70 and the drying device 80. It is done. That is, in the present embodiment, the contact tank 10, the ozone treatment tank 20, the deaeration tank 30, the regenerative liquid tank 40, the new liquid tank 50, and the contact chamber 60 are used, and a single substrate type continuous substrate processing apparatus is provided. The circulation type peeling device, the washing layer 70, and the drying device 80 are used.
  • FIG. 6 is a schematic view of a circulation type peeling apparatus for explaining the second embodiment of the present invention.
  • the water rinsing tank 70 is a tank that cleans and removes the stripping solution and the resist residue adhering to the substrate after stripping by the stripping solution in the contact chamber 60 with pure water. Then, the stripping solution and the resist residue cleaned and removed from the substrate are processed in a waste water treatment process, which is not shown in the drawings.
  • the drying device 80 is a tank that dries the substrate, which has been washed with pure water in the water washing tank 70, with dry air. Drying is performed by a method such as centrifugal dehydration, hot air, infrared radiation, etc., and the substrate is dried, and the resist residue is also removed by the force on the substrate surface. As a result, the substrate surface is prevented from being contaminated due to the resist residue reattaching to the substrate surface.
  • the resist residue on the substrate is removed by a removing process using the water washing tank 70 and the drying device 80, and then a quality inspection is performed.
  • quality inspection evaluation criteria include the density of resist residue on the substrate.
  • the substrate is a liquid crystal panel
  • the peripheral portion to which the residue is attached is a pixel. Therefore, the probability of black spots or white spots on the liquid crystal panel being displayed increases. Therefore, it is desirable that there is no resist residue on the substrate after the removal step, but in this embodiment, a yield of about 100% is achieved within the required standard range of the liquid crystal panel manufacturer regarding the resist residue.
  • Possible evaluation criteria were adopted as management values.
  • a resist residue density of 1.5 Zm 2 was used as the control value.
  • the productivity of the product substrate (Yield) can be achieved at a level of almost 100%, and if it is within the control value range, the stripping process and removal process can be fully automated.
  • test conditions in the second embodiment are the same as the test conditions in the first embodiment.
  • the substrate processing speed was set to 60 sheets ZHr, and the stripper removal amount by exhaust lLZHr was continuously operated for 30 days. After the peeling process and the removing process, 10 circuit boards are randomly extracted, As a result of observation of the substrate surface with an optical microscope, the resist remaining ⁇ on the substrate surface mean 4. was six Zm 2. The final circuit board yield was 10% or less.
  • the peeling device when the peeling device is operated in a cycle of 4 days of apparatus operation + 8 hours of liquid exchange under the above test conditions where the substrate processing speed is 60 sheets ZHr, The substrate processing amount per unit is 39,877, and the total consumption of stripping solution is 2445L, which is 61mL when converted to the consumption per substrate.
  • the resist remaining ⁇ on the substrate surface mean 2. was one Zm 2.
  • the final circuit board yield was 65%.
  • the peeling process was performed under the same conditions as in Example 2 of the first embodiment described above, and after performing the removal process, 10 circuit boards were randomly extracted, and the substrate surface was observed with an optical microscope. resist residue ⁇ on the substrate surface was averaged 1.0 amino Zm 2. The final circuit board yield was 91%.
  • the coating material is peeled off from the substrate by using the regenerative stripping solution to come into contact with the coating material.
  • the peeling liquid to be filled can be extremely reduced. As a result, it becomes possible to use the stripping solution efficiently, and the consumption of the stripping solution can be greatly reduced, the economy can be improved, and the burden on the environment can be reduced.
  • the concentration change of dissolved organic matter with the operation time after the start of stripping is not calculated based on complicated physical property calculations, but the organic matter is simply and accurately calculated. Concentration can be calculated and changes in organic concentration can be predicted at the same time.
  • the organic substance concentration in the process in the stripping device can be easily managed. As a result, complicated chemical exchange work required for concentration management can be reduced, and stripping solution can be used efficiently. As a result, the consumption of the stripping solution can be greatly reduced, the economy can be improved and the burden on the environment can be reduced.
  • the organic substance concentration in the circulation type peeling apparatus can be calculated easily and accurately, and a change in the organic substance concentration can be predicted. Therefore, since the circulation type peeling apparatus can be operated within the standard of operation control value, contamination of the circuit board, that is, adhesion of resist residue can be avoided. As a result, the yield of circuit boards can be greatly improved.
  • the organic residue on the substrate after the removal step was below a predetermined control value, the number of organic residues on the substrate was adopted as the quality control standard of the substrate as a product. In this case, the product yield can be greatly improved, and continuous production is also possible within the quality control standards.
  • the force exemplified for the peeling apparatus including the ozone treatment mechanism is not limited to the above-described embodiment, and includes various other embodiments.
  • the concentration management becomes easier and the industrial value can be increased.
  • the peeling step since the coating material is peeled off from the substrate by contacting the coating material on the substrate using the regenerative peeling solution, the amount of the newly replenished peeling solution is extremely reduced. be able to. As a result, it becomes possible to use the stripping solution efficiently, and the consumption of the stripping solution can be greatly reduced, the economic efficiency can be improved, and the burden on the environment can be reduced.
  • the coating substance on the substrate is reattached. It is possible to prevent contamination of the substrate surface and improve the product yield due to generation of defective products.
  • the organic residue on the substrate that has been subjected to the removal process is less than or equal to a predetermined control value, if the number of organic residues on the substrate is adopted as the quality control standard of the substrate that is the product, Yield can be greatly improved, and continuous production is also possible within the quality control standards.

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Distillation Of Fermentation Liquor, Processing Of Alcohols, Vinegar And Beer (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

A method of producing a substrate which comprises the stripping stage consisting of the step of treating a stripping liquor containing organic matters originating in a stripped coating dissolved therein to give a regenerated stripping liquor and the step of bringing fresh supplied stripping liquor and the regenerated stripping liquor into contact with a coating on a substrate, and the removal stage consisting of the step of washing with water the surface of the substrate from which the coating has been stripped off in the stripping stage and the step of drying the washed substrate with a drying air stream, wherein the organic matters remaining on the substrate after the removal stage is not more than a definite control level.

Description

明 細 書  Specification
剥離液中の有機物濃度を管理した基体の製造方法  Manufacturing method of substrate in which organic substance concentration in stripper is controlled
技術分野  Technical field
[0001] 本発明は、基体上の被膜物質に剥離液を接触させて基体から被膜物質を剥離す る剥離工程と、剥離工程により被膜物質が少なくとも一部剥離された基体力ゝら被膜物 質由来の有機物の残渣を除去する除去工程と、を含む基体の製造方法に関する。 特に、除去工程が行われた基体上の前記有機物の残渣につ 、て管理が可能な基体 の製造方法に関する。  [0001] The present invention relates to a stripping process in which a stripping solution is brought into contact with a coating material on a substrate to strip the coating material from the substrate, and a substrate material having at least a part of the coating material peeled off by the stripping step. And a removing step of removing a residue of an organic substance derived therefrom. In particular, the present invention relates to a substrate manufacturing method capable of managing the organic residue on the substrate after the removal process.
背景技術  Background art
[0002] 電子デバイス用基板等をフォトリソグラフィ一法によって作製する工程では、剥離液 を用いてフォトレジストを除去する工程がある。従来の一般的な剥離装置では、フォト レジストの剥離性能を維持するために、フォトレジスト由来の剥離液中に溶解した有 機物の濃度を管理値以下に維持しなければならず、定期的または連続的に剥離液 の一部を剥離装置力も外部に排出することによって、有機物濃度を管理している。こ のため、大量の廃液が排出され、環境汚染および製造コスト等の点で大きな問題に なっている。  [0002] In a process of manufacturing an electronic device substrate or the like by a photolithography method, there is a process of removing the photoresist using a stripping solution. In the conventional general stripping apparatus, in order to maintain the stripping performance of the photoresist, the concentration of the organic matter dissolved in the stripping solution derived from the photoresist must be kept below the control value. The organic substance concentration is controlled by continuously discharging part of the stripping solution to the outside. For this reason, a large amount of waste liquid is discharged, which is a major problem in terms of environmental pollution and manufacturing costs.
[0003] 近年、剥離装置内において、基体上に被膜されたフォトレジストを剥離溶解した後 のフォトレジスト由来の有機物を含む剥離液をオゾン処理により再生し、剥離液として 再使用ないし循環使用するプロセスが提案されている(例えば、特許文献 1乃至 3参 照)。  [0003] In recent years, in a stripping apparatus, a process of reclaiming or reusing a stripping solution containing organic substances derived from a photoresist after stripping and dissolving a photoresist coated on a substrate by ozone treatment. Have been proposed (see, for example, Patent Documents 1 to 3).
特許文献 1:特開 2003 - 203856号公報  Patent Document 1: Japanese Patent Laid-Open No. 2003-203856
特許文献 2:特開 2003 - 330206号公報  Patent Document 2: JP 2003-330206 A
特許文献 3:特開 2003— 305418号公報  Patent Document 3: Japanese Patent Laid-Open No. 2003-305418
[0004] 特許文献 1乃至 3に記載されたプロセスでは、オゾンとの反応性が低い環状カーボ ネートを剥離液として採用する。一般に基体上に被膜された高分子物質からなる被 膜物質を剥離溶解した後、溶解した被膜物質由来の有機物 (以下、「溶解有機物」と いう。)を含む剥離液を装置内で再生し、剥離液として再使用しているために、剥離 液の消費量が極めて少な 、。 [0004] In the processes described in Patent Documents 1 to 3, a cyclic carbonate having low reactivity with ozone is used as a stripping solution. In general, after a film material made of a polymer material coated on a substrate is peeled and dissolved, a stripping solution containing a dissolved organic material derived from the coating material (hereinafter referred to as “dissolved organic material”) is regenerated in the apparatus, Peeling because it is reused as a stripping solution The liquid consumption is very low.
[0005] 高分子物質からなる溶解有機物が、オゾン処理槽で酸化分解されることにより低分 子化合物となり、低分子化合物を含む剥離液は再び基板上の被膜物質を剥離溶解 するための剥離液として使用される。低分子化合物は、剥離性能に悪影響を及ぼす 限界濃度 (以下、「許容濃度」という。)が、未分解の被膜物質由来の高分子物質力も なる有機物と比較して極めて高い。したがって、低分子化合物を高濃度で含有する 剥離液でも安定した高 ヽ剥離性能を確保でき、その結果剥離液の消費量を大幅に 削減でき、経済性を向上させるとともに環境に対する負荷も低減させる。  [0005] Dissolved organic matter composed of a high molecular weight substance is converted into a low molecular compound by oxidative decomposition in an ozone treatment tank, and the stripping solution containing the low molecular weight compound is a stripping liquid for stripping and dissolving the coating material on the substrate again. Used as. The low molecular weight compound has an extremely high limit concentration (hereinafter referred to as “acceptable concentration”) that adversely affects the stripping performance, compared to an organic material having a high molecular weight derived from an undegraded coating material. Therefore, even a stripping solution containing a low molecular compound at a high concentration can ensure stable and high stripping performance. As a result, the amount of stripping solution consumed can be greatly reduced, improving the economy and reducing the burden on the environment.
[0006] しかし、循環型剥離装置を用いるプロセスにおいては、剥離液中の高分子化合物 からなる溶解有機物やその分解された低分子化合物の濃度が許容濃度を越えると、 剥離性能の低下や、基体表面の汚染、すなわち、基体表面上への被膜物質残渣が 再付着することにより、不良品が発生して製品歩留まりが低下する。従来、許容濃度 を管理基準値内に管理するために、紫外線の吸光度測定等によって被膜物質由来 の有機物の濃度を計測し、濃度管理を行っていたが、溶解有機物は紫外線—可視 領域の吸収がないことから、吸光度測定による濃度管理ができな力つた。  [0006] However, in the process using a circulation type peeling apparatus, if the concentration of the dissolved organic substance composed of a high molecular compound or the decomposed low molecular compound in the peeling liquid exceeds the allowable concentration, the peeling performance may be deteriorated, Contamination of the surface, that is, the coating substance residue on the surface of the substrate reattaches, resulting in defective products and a decrease in product yield. Conventionally, in order to manage the permissible concentration within the control standard value, the concentration of organic substances derived from the coating substance was measured by measuring the absorbance of ultraviolet rays, etc., and the concentration was controlled. However, dissolved organic substances do not absorb in the ultraviolet-visible region. As a result, concentration control by absorbance measurement was not possible.
[0007] したがって、当該有機物濃度がプロセスの稼動条件や稼動時間に伴い、どのように 変化するのか予測できないため、オペレーターの経験的な勘に頼ることが多ぐ試行 錯誤による稼動条件の適正化を行わなければならな力つた。 [0007] Therefore, since it is impossible to predict how the organic substance concentration will change with the operating conditions and operating time of the process, it is often necessary to rely on the empirical insight of the operator to optimize the operating conditions through trial and error. I had to do it.
[0008] さらに、剥離装置の稼動時間に伴う剥離液中の溶解有機物の濃度に関する変化を 予測することは困難であり、剥離装置内のプロセスにおける溶解有機物の濃度管理 も困難であった。したがって、剥離液を効率的に利用することによって、剥離液の消 費量を大幅に削減し、経済性を向上させるとともに環境に対する負荷を低減させるこ とが達成すべき課題として挙げられる。 [0008] Furthermore, it is difficult to predict a change in the concentration of dissolved organic matter in the stripper with the operating time of the stripper, and it is also difficult to control the concentration of dissolved organic matter in the process in the stripper. Therefore, the effective use of the stripping solution can greatly reduce the amount of stripping solution consumed, improve the economy, and reduce the burden on the environment.
発明の開示  Disclosure of the invention
発明の概要  Summary of the Invention
[0009] 本発明は、上述の問題点と課題に鑑みてなされたものであり、第一の目的は、基体 上の被膜物質に剥離液を接触させて基体から被膜物質を剥離する剥離工程と、剥 離工程により被膜物質が少なくとも一部剥離された基体から被膜物質由来の有機物 の残渣を除去する除去工程と、を含む基体の製造方法であって、除去工程が行われ た基体上の有機物残渣について管理できるとともに、基体の歩留りを向上させること ができる基体の製造方法を提供することにある。 [0009] The present invention has been made in view of the above-described problems and problems, and a first object is to provide a peeling step in which the coating material on the substrate is brought into contact with the coating liquid to separate the coating material from the substrate. The organic substance derived from the coating substance from the substrate from which the coating substance has been peeled off at least partially by the peeling process A method for producing a substrate, which can manage organic residues on the substrate subjected to the removal step and improve the yield of the substrate. There is to do.
[0010] 第二の目的は、剥離液を効率的に利用することも可能となり、剥離液の消費量を大 幅に削減でき、経済性を向上させるとともに、環境に対する負荷も低減させる基体の 製造方法を提供することにある。  [0010] The second purpose is to produce a substrate that can also efficiently use the stripping solution, greatly reduce the consumption of the stripping solution, improve the economy, and reduce the burden on the environment. It is to provide a method.
[0011] 以上のような目的を達成するため、本発明に係る基体の製造方法においては、基 体上の被膜物質に剥離液を接触させて前記基体から前記被膜物質を剥離する剥離 工程と、前記剥離工程により被膜物質が少なくとも一部剥離された基体力 前記被 膜物質由来の有機物の残渣を除去する除去工程と、を含む基体の製造方法であつ て、  [0011] In order to achieve the above object, in the method for producing a substrate according to the present invention, a peeling step of peeling the coating substance from the substrate by bringing a peeling solution into contact with the coating substance on the substrate; A substrate force from which at least a part of the coating substance is peeled off by the peeling step, and a removing step of removing a residue of organic substances derived from the film substance.
前記剥離工程は、  The peeling step includes
剥離した前記被膜物質由来の有機物が溶解した剥離液を再生剥離液にする処理 を行う工程と、  A step of carrying out a process of using a stripping solution in which an organic substance derived from the peeled coating material is dissolved as a reclaimed stripping solution;
新たに補充された剥離液と前記再生剥離液とを前記基体上の被膜物質に接触さ せて、前記基体から前記被膜物質を剥離する工程と、  Bringing the newly replenished stripping solution and the reclaimed stripping solution into contact with the coating material on the substrate to strip the coating material from the substrate;
を含み、  Including
前記除去工程は、  The removal step includes
前記剥離工程により前記被膜物質が剥離された前記基体の表面を水で洗浄する 工程と、  Washing the surface of the substrate from which the coating substance has been peeled off in the peeling step with water;
洗浄された前記基体を乾燥空気により乾燥する工程と、  Drying the cleaned substrate with dry air;
を含み、  Including
前記除去工程が行われた前記基体上の前記有機物の残渣が、所定の管理値以下 である。  The residue of the organic matter on the substrate on which the removing step has been performed is not more than a predetermined control value.
[0012] 更に、前記剥離工程には、  [0012] Further, in the peeling step,
前記被膜物質が剥離して前記被膜物質由来の有機物が溶解した剥離液を受ける 接触槽と、前記接触槽内の前記有機物が溶解した剥離液を前記再生剥離液にする 処理が行われる処理槽とを有する循環型剥離装置が用いられ、 前記循環型剥離装置の剥離液中の有機物濃度は、 A contact tank that receives a stripping solution in which the coating material is peeled off and an organic substance derived from the coating material is dissolved; a processing tank in which the stripping solution in which the organic matter is dissolved in the contact tank is used as the regenerative stripping solution; A circulation type peeling device having The organic substance concentration in the stripping solution of the circulating stripping device is
剥離液に溶解した有機物が前記接触槽に流入する流入速度のデータと、剥離液 が前記循環型剥離装置から排出された剥離液の排出速度のデータと、剥離液が前 記接触槽力 前記処理槽に流出する流出速度のデータとを含むデータが記憶され たデータ記憶手段と、  Data on the inflow speed at which the organic matter dissolved in the stripping solution flows into the contact tank, data on the discharge speed of the stripping liquid discharged from the circulation type stripping device, and the stripping liquid is the contact tank force. Data storage means storing data including outflow rate data flowing into the tank;
第 1の時刻において、前記接触槽内の有機物濃度のデータと、前記流入速度のデ ータと、前記排出速度のデータと、前記流出速度のデータとから、前記第 1の時刻か ら単位時間経過した第 2の時刻における前記接触槽内の有機物濃度を計算する第 1 の濃度計算手段と、  At the first time, from the data of the organic substance concentration in the contact tank, the data of the inflow rate, the data of the discharge rate, and the data of the outflow rate, the unit time from the first time. A first concentration calculating means for calculating an organic matter concentration in the contact tank at a second time after passing;
前記第 2の時刻において、前記接触槽内の有機物濃度のデータと、前記流入速度 のデータと、前記排出速度のデータと、前記流出速度のデータと、再生剥離液が前 記処理槽から前記接触槽へ流入する流入速度のデータと、新たに補充された剥離 液が前記接触槽に流入する流入速度のデータとから、前記第 2の時刻から単位時間 経過した第 3の時刻における接触槽内の有機物濃度を計算する第 2の濃度計算手 段とを含む濃度計算手段であり、かつ、  At the second time, the organic matter concentration data in the contact tank, the inflow speed data, the discharge speed data, the outflow speed data, and the regenerative stripping solution are transferred from the treatment tank to the contact tank. From the data of the inflow velocity flowing into the tank and the data of the inflow velocity at which the newly replenished stripping liquid flows into the contact tank, the inside of the contact tank at the third time after a unit time has elapsed from the second time. A concentration calculating means including a second concentration calculating means for calculating an organic substance concentration, and
前記第 2の濃度計算手段を用いて、前記第 3の時刻における前記接触槽内の有機 物濃度を、前記第 2の時刻における前記接触槽内の有機物濃度として、前記接触槽 内の有機物濃度を、所定回数繰り返して計算する濃度計算手段と、  Using the second concentration calculation means, the organic substance concentration in the contact tank at the third time is set as the organic substance concentration in the contact tank at the second time, and the organic substance concentration in the contact tank is Concentration calculating means for repeatedly calculating a predetermined number of times;
前記濃度計算手段により計算された前記有機物濃度を表す信号を出力する出力 手段と、  Output means for outputting a signal representing the organic substance concentration calculated by the concentration calculating means;
を有する計算装置により計算される。 Is computed by a computing device having
図面の簡単な説明 Brief Description of Drawings
[図 1]図 1は、 本発明の第 1実施形態を説明するための循環型剥離装置の概要図 である。 FIG. 1 is a schematic view of a circulation type peeling device for explaining a first embodiment of the present invention.
[図 2]図 2は、本発明の第 1実施形態に適用される有機物濃度計算装置の概略構成 図である。  FIG. 2 is a schematic configuration diagram of an organic matter concentration calculation apparatus applied to the first embodiment of the present invention.
[図 3]図 3は、図 2の有機物計算手段 300の有機物濃度計算の手順を示したフローチ ヤートである。 [図 4]図 4は、本発明の第 1実施形態に適用されるプログラムがコンピュータに実行さ せる手順を示したフローチャートである。 [FIG. 3] FIG. 3 is a flow chart showing the procedure for calculating the organic substance concentration in the organic substance calculating means 300 of FIG. FIG. 4 is a flowchart showing a procedure for causing a computer to execute a program applied to the first embodiment of the present invention.
[図 5]図 5は、本発明の第 1実施形態に適用される他の循環型剥離装置の概要図で ある。  FIG. 5 is a schematic diagram of another circulation type peeling apparatus applied to the first embodiment of the present invention.
[図 6]図 6は、本発明の第 2実施形態を説明するための循環型剥離装置の概要図で ある。  FIG. 6 is a schematic view of a circulation type peeling apparatus for explaining a second embodiment of the present invention.
[図 7]図 7は、本発明の第 2実施形態に適用される他の循環型剥離装置の概要図で ある。  FIG. 7 is a schematic view of another circulation type peeling apparatus applied to the second embodiment of the present invention.
発明の詳細な説明  Detailed Description of the Invention
[0014]  [0014]
全般的説明  General explanation
[0015] 本発明に係る基体の製造方法においては、剥離した被膜物質由来の有機物が溶 解した剥離液を再生剥離液にする処理を行う工程と、新たに補充された剥離液と再 生剥離液とを基体上の被膜物質に接触させて、基体から被膜物質を剥離する工程と 、を含む剥離工程と、剥離工程により被膜物質が剥離された基体の表面を水で洗浄 する工程と、洗浄された基体を乾燥空気により乾燥する工程と、を含む除去工程とを 有する。  [0015] In the method for producing a substrate according to the present invention, a step of performing a treatment for using a stripping solution in which an organic substance derived from the stripped coating material is dissolved as a reclaimed stripping solution, and a newly replenished stripping solution and regenerative stripping. Removing the coating material from the substrate by bringing the liquid into contact with the coating material on the substrate, and a step of washing the surface of the substrate from which the coating material has been removed in the peeling step with water, and cleaning. And a removing step including drying the dried substrate with dry air.
[0016] 具体的には、本発明に係る基体の製造方法は、  [0016] Specifically, the method for producing a substrate according to the present invention includes:
基体上の被膜物質に剥離液を接触させて前記基体から前記被膜物質を剥離する 剥離工程と、前記剥離工程により被膜物質が少なくとも一部剥離された基体力 前 記被膜物質由来の有機物の残渣を除去する除去工程と、を含む基体の製造方法で あって、  A stripping step in which a stripping solution is brought into contact with the coating material on the substrate to strip the coating material from the substrate, and a substrate force from which the coating material has been stripped at least partially by the stripping step is a residue of organic matter derived from the coating material. And a removing step for removing the substrate.
前記剥離工程は、  The peeling step includes
剥離した前記被膜物質由来の有機物が溶解した剥離液を再生剥離液にする処理 を行う工程と、  A step of carrying out a process of using a stripping solution in which an organic substance derived from the peeled coating material is dissolved as a reclaimed stripping solution;
新たに補充された剥離液と前記再生剥離液とを前記基体上の被膜物質に接触さ せて、前記基体から前記被膜物質を剥離する工程と、  Bringing the newly replenished stripping solution and the reclaimed stripping solution into contact with the coating material on the substrate to strip the coating material from the substrate;
を含み、 前記除去工程は、 Including The removal step includes
前記剥離工程により前記被膜物質が剥離された前記基体の表面を水で洗浄する 工程と、  Washing the surface of the substrate from which the coating substance has been peeled off in the peeling step with water;
洗浄された前記基体を乾燥空気により乾燥する工程と、  Drying the cleaned substrate with dry air;
を含み、  Including
前記除去工程が行われた前記基体上の前記有機物の残渣が、所定の管理値以下 である、  The organic residue on the substrate on which the removal step has been performed is a predetermined control value or less.
ことを特徴とする。  It is characterized by that.
[0017] 上述した発明によれば、前記剥離工程を含むことから、再生剥離液を用いて基体 上の被膜物質に接触させて基体から被膜物質を剥離するため、新たに補充する剥 離液を極めて少なくすることができる。この結果、剥離液を効率的に利用することも可 能となり、剥離液の消費量を大幅に削減でき、経済性を向上させるとともに、環境に 対する負荷も低減させることができる。  [0017] According to the above-described invention, since the peeling step is included, a replenishing stripping solution is used to peel the coating material from the substrate by contacting the coating material on the substrate using the regenerative stripping solution. It can be very small. As a result, it becomes possible to use the stripping solution efficiently, and the consumption of the stripping solution can be greatly reduced, the economic efficiency can be improved, and the burden on the environment can be reduced.
[0018] また、前記除去工程を含むことから、基体上への被膜物質が再付着することによる 基体表面の汚染を防止して、不良品が発生することによる製品歩留まりを向上させる ことができる。  [0018] Further, since the removal step is included, contamination of the substrate surface due to re-adhesion of the coating substance on the substrate can be prevented, and the product yield due to generation of defective products can be improved.
[0019] さらに、除去工程が行われた基体上の有機物の残渣が所定の管理値以下であるこ とから、製品である基体の品質管理基準として、基体上の有機物の残渣の個数等を 採用した場合、製品の歩留りを大幅に向上することができるとともに、品質管理基準 内にお 、て連続製造も可能となる。  [0019] Further, since the organic residue on the substrate after the removal step is below a predetermined control value, the number of organic residues on the substrate was adopted as the quality control standard of the substrate as a product. In this case, the product yield can be greatly improved, and continuous production is also possible within the quality control standards.
[0020] 本発明に係る方法として、剥離工程には、被膜物質が剥離して被膜物質由来の有 機物が溶解した剥離液を受ける接触槽と、接触槽内の有機物が溶解した剥離液を 再生剥離液にする処理が行われる処理槽とを有する循環型剥離装置が用いられ、 循環型剥離装置の剥離液中の有機物濃度は、剥離液に溶解した有機物が接触槽 に流入する流入速度のデータと、剥離液が循環型剥離装置から排出された剥離液 の排出速度のデータと、剥離液が接触槽から処理槽に流出する流出速度のデータと を含むデータが記憶されたデータ記憶手段と、第 1の時刻において、接触槽内の有 機物濃度のデータと、流入速度のデータと、排出速度のデータと、流出速度のデー タとから、第 1の時刻から単位時間経過した第 2の時刻における接触槽内の有機物 濃度を計算する第 1の濃度計算手段と、第 2の時刻において、接触槽内の有機物濃 度のデータと、流入速度のデータと、排出速度のデータと、流出速度のデータと、再 生剥離液が処理槽から接触槽へ流入する流入速度のデータと、新たに補充された 剥離液が接触槽に流入する流入速度のデータとから、第 2の時刻から単位時間経過 した第 3の時刻における接触槽内の有機物濃度を計算する第 2の濃度計算手段とを 含む濃度計算手段であり、かつ、第 2の濃度計算手段を用いて、第 3の時刻における 接触槽内の有機物濃度を、第 2の時刻における接触槽内の有機物濃度として、接触 槽内の有機物濃度を、所定回数繰り返して計算する濃度計算手段と、濃度計算手段 により計算された有機物濃度を表す信号を出力する出力手段と、を有する計算装置 により計算される、ことが好ましい。 [0020] As a method according to the present invention, in the peeling step, a contact tank that receives a peeling liquid in which the coating substance is peeled and an organic substance derived from the coating substance is dissolved, and a peeling liquid in which the organic substance in the contact tank is dissolved are used. A circulation type stripping device having a treatment tank in which the processing to make a reclaimed stripping solution is used, and the organic matter concentration in the stripping solution of the circulating type stripping device is the inflow rate at which the organic matter dissolved in the stripping solution flows into the contact bath. Data storage means for storing data including data, data on the discharge speed of the release liquid discharged from the circulation type peeling device, and data on the outflow speed at which the release liquid flows out from the contact tank to the treatment tank; At the first time, data on the concentration of organic matter in the contact tank, data on the inflow rate, data on the discharge rate, and data on the outflow rate The first concentration calculating means for calculating the organic substance concentration in the contact tank at the second time after a unit time has elapsed from the first time, and the organic substance concentration data in the contact tank at the second time. Inflow rate data, discharge rate data, outflow rate data, inflow rate data where the regenerative stripping liquid flows from the treatment tank to the contact tank, and newly replenished stripping liquid into the contact tank. A concentration calculation means including a second concentration calculation means for calculating an organic substance concentration in the contact tank at a third time after a unit time has elapsed from the second time, based on the inflow velocity data flowing in; Using the concentration calculation method in (2) above, the organic substance concentration in the contact tank at the third time is set as the organic substance concentration in the contact tank at the second time, and the organic substance concentration in the contact tank is repeatedly calculated a predetermined number of times. Calculation means and concentration calculation means It is preferable that the calculation unit has an output unit that outputs a signal representing the organic substance concentration calculated by the calculation unit.
[0021] 上述した発明によれば、濃度計算手段を有することから、記憶されたデータに基づ く溶解有機物の濃度を計算するに際し、剥離開始後の稼動時間に伴う溶解有機物 濃度の変化を複雑な物性計算に基づいて計算することなぐ簡易に的確に有機物濃 度を計算でき、同時に有機物濃度の変化を予測できる。  [0021] According to the above-described invention, since the concentration calculating means is provided, when calculating the concentration of the dissolved organic matter based on the stored data, the change in the concentration of the dissolved organic matter with the operation time after the start of peeling is complicated. It is possible to calculate the organic substance concentration easily and accurately without calculating based on the calculation of physical properties, and at the same time, it is possible to predict changes in the organic substance concentration.
[0022] したがって、剥離装置内のプロセスにおける有機物濃度の管理を容易にし、その結 果、剥離液を効率的に利用することも可能となり、剥離液の消費量を大幅に削減でき 、経済性を向上させるとともに環境に対する負荷も低減できる。  [0022] Therefore, it is possible to easily manage the organic substance concentration in the process in the peeling apparatus, and as a result, it is possible to use the stripping liquid efficiently, and the consumption of the stripping liquid can be greatly reduced, resulting in economical efficiency. It is possible to improve and reduce the burden on the environment.
[0023] 具体的には、剥離液の抜き出し交換作業が必要なくなるため、基体の連続生産が 可能となり、基体の生産効率を向上させることができる。また、不慮の運転条件の変 更に伴う有機物濃度の変化も予測することができるため、トラブルを未然に防ぐことが できる。  [0023] Specifically, since it is not necessary to take out and replace the stripping solution, continuous production of the substrate is possible, and the production efficiency of the substrate can be improved. In addition, it is possible to predict changes in the organic matter concentration that accompany unexpected changes in operating conditions, thus preventing troubles.
[0024] ここで、「記憶されたデータ」とは、槽内の有機物濃度のデータと、剥離液に溶解し た有機物が接触槽に流入する流入速度のデータと、剥離液が循環型剥離装置から 排出された剥離液の排出速度のデータと、剥離液が接触槽から処理槽に流出する 流出速度のデータ、再生剥離液が処理槽から接触槽へ流入する流入速度のデータ と、新たに補充された剥離液が接触槽に流入する流入速度のデータ等であり、有機 物濃度を計算する際に入力され記憶されたデータに限られず、計算する以前に既に 記憶されたデータも含まれる。したがって、想定値に限定されず、実測値であっても よい。 [0024] Here, "stored data" refers to data on the concentration of organic matter in the tank, data on the inflow rate at which organic matter dissolved in the stripping liquid flows into the contact tank, and stripping liquid is a circulating stripping device. The discharge rate data of the stripping solution discharged from the tank, the outflow rate data from which the stripping solution flows out from the contact tank to the treatment tank, the inflow rate data from which the reclaimed stripping solution flows into the contact tank, and a new replenishment This is data such as the inflow rate at which the stripping solution flows into the contact tank, and is not limited to the data input and stored when calculating the organic substance concentration. Stored data is also included. Therefore, it is not limited to the assumed value and may be an actual measurement value.
[0025] また、データ記憶手段を有することから、キーボードゃタツチパネル等力 直接入力 された有機物濃度データ等の想定値が記憶された場合には、剥離液中の有機物濃 度の変化を予測できるだけでなぐ予測結果を踏まえたプロセス検討にも利用可能と なり、さらには、様々な操業状態、例えば基体の種類が変更された状態であっても、 製造管理者は簡易かつ適切な操業条件を指示することが可能となる。一方、剥離装 置に設けられた計装機器力ゝらの実測値等が入力されて記憶された場合には、装置 稼動中においても、剥離液中の有機物濃度の変化が予測可能となり、剥離装置内の 剥離液の管理が容易となる。  [0025] In addition, since it has data storage means, it can only predict changes in the organic matter concentration in the stripping solution when the assumed values such as the organic matter concentration data directly input from the keyboard touch panel etc. are stored. In addition, it can be used for process examination based on the predicted results, and even in various operating conditions, for example, when the type of substrate is changed, the production manager instructs simple and appropriate operating conditions. It becomes possible. On the other hand, when measured values of instrumentation equipment provided in the stripping device are input and stored, changes in the organic matter concentration in the stripping solution can be predicted even while the device is operating, and stripping is possible. It is easy to manage the stripping solution in the equipment.
[0026] また、出力手段を有することから、表示装置を出力手段に設けることにより、ォペレ 一ターは剥離液中の有機物濃度の変化を視認でき、分析頻度の削減や液抜き等の 作業段取りも可能となり、作業効率の向上も図れる。また、紙や CDROM等の記録媒 体に記録することにより、操業指示書の作成や、過去の計算結果の参照等が容易と なる。  [0026] Further, since the output means is provided, by providing a display device on the output means, the operator can visually recognize the change in the concentration of organic substances in the stripping solution, and can reduce the frequency of analysis and set up the work such as liquid removal. It is possible to improve work efficiency. In addition, by recording on a recording medium such as paper or CDROM, it becomes easy to create operational instructions and refer to past calculation results.
[0027] さらに、計算装置が有機物濃度の分析装置を組み込んだ場合、精度の高い濃度 管理が可能となる。この結果、本発明の基体の製造方法により、計算装置を備えた 循環型剥離装置の無人操業も可能となり、完全自動化も可能となる。  [0027] Furthermore, when the calculation device incorporates an organic concentration analyzer, concentration control with high accuracy becomes possible. As a result, according to the substrate manufacturing method of the present invention, it is possible to perform unattended operation of a circulation type peeling apparatus equipped with a calculation apparatus, and it is possible to fully automate.
[0028] なお、本発明に係る発明によれば、基体上の油膜、塗膜、有機汚染被膜、微粒子 等の一般的な有機物の被膜の溶解にも適用可能である。  [0028] It should be noted that the invention according to the present invention can also be applied to dissolution of a general organic film such as an oil film, a coating film, an organic contamination coating, and fine particles on the substrate.
[0029] 本発明に係る方法として、計算装置は、濃度計算手段により計算された有機物濃 度と、被膜物質由来の有機物が溶解した剥離液を再生剥離液にする処理を行う循 環型剥離装置における有機物濃度の実測値とに基づいて得られた補正係数が記憶 された補正係数記憶手段を有し、濃度計算手段が、計算された有機物濃度と補正係 数とにより補正後の有機物濃度を計算し、補正後の有機物濃度により接触槽内及び 処理槽内の有機物濃度を計算する、ことが好ましい。  [0029] As a method according to the present invention, the calculation device is a circulation type peeling device that performs processing for converting the organic substance concentration calculated by the concentration calculating means and the peeling liquid in which the organic substance derived from the coating substance is dissolved into a regenerative peeling liquid. Correction coefficient storage means for storing the correction coefficient obtained based on the measured value of organic substance concentration at, and the concentration calculation means calculates the corrected organic substance concentration based on the calculated organic substance concentration and the correction coefficient. It is preferable to calculate the organic substance concentration in the contact tank and the treatment tank based on the corrected organic substance concentration.
[0030] 上述した発明によれば、補正係数記憶手段を有することから、最小二乗法等の公 知の手法を用いて、剥離液中の有機物濃度の計算値を実測値にあわせる補正する ための補正係数を同定して記憶することが可能となり、装置の製造可能な条件範囲 において、予め補正係数をデータベース化することが可能となる。この結果、基体の 種類ごとに、データベース化された補正係数を用いることにより、生産性や経済性を 考慮した最適な操業条件を容易に決定することができる。 [0030] According to the above-described invention, since the correction coefficient storage unit is provided, the calculation value of the organic substance concentration in the stripping solution is corrected to match the actual measurement value using a known method such as the least square method. Therefore, the correction coefficient can be identified and stored, and the correction coefficient can be stored in a database in advance within the condition range in which the apparatus can be manufactured. As a result, it is possible to easily determine the optimum operating conditions in consideration of productivity and economy by using a correction coefficient stored in a database for each type of substrate.
[0031] さらに、処理槽における処理を行わない仮想プロセスに基づき計算された有機物 濃度を補正係数により補正した有機物濃度を計算できる濃度計算手段を有すること から、接触槽内及び処理槽内の有機物濃度を計算可能にするだけでなぐ物性計算 に基づく有機物濃度を計算する必要がなくなり、簡易にかつ迅速に、有機物濃度を 計算することができる。  [0031] Furthermore, since it has a concentration calculation means capable of calculating the organic substance concentration obtained by correcting the organic substance concentration calculated based on the virtual process that does not perform the treatment in the treatment tank by the correction coefficient, the organic substance concentration in the contact tank and in the treatment tank It is no longer necessary to calculate the organic substance concentration based on the calculation of physical properties just by making the calculation possible, and the organic substance concentration can be calculated easily and quickly.
[0032] 本発明に係る方法として、計算装置は、出力手段力も出力された信号に基づき、接 触槽及び処理槽への流量を含む操作量を制御する制御手段を、さらに有する、 ことが好ましい。  [0032] As a method according to the present invention, it is preferable that the calculation apparatus further includes a control unit that controls an operation amount including a flow rate to the contact tank and the processing tank based on the output signal of the output unit force. .
[0033] 上述した発明によれば、制御手段を有することから、有機物濃度の管理範囲内で、 接触槽及び処理槽への流量 (流入量'流出量)、圧力、温度等の操作量を制御可能 となり、実プロセスを自動制御することも可能となる。この結果、操業条件の変更や、 剥離液の延命等に、装置の運転者の勘や経験に頼ることなぐ簡易かつ安全に、有 機物濃度を管理することが可能となる。  [0033] According to the above-described invention, since the control means is provided, the operation amount such as the flow rate (inflow amount'outflow amount), pressure, temperature, etc. to the contact tank and the processing tank is controlled within the organic substance concentration management range. It becomes possible to automatically control the actual process. As a result, it is possible to manage the concentration of the organic matter simply and safely without relying on the intuition and experience of the equipment operator for changing the operating conditions and extending the life of the stripping solution.
[0034] 本発明に係る方法として、剥離液は炭酸エチレンを主成分とし、剥離工程は剥離し た被膜物質由来の有機物が溶解した剥離液をオゾン処理により再生剥離液とする、 ことが好ましい。  [0034] As a method according to the present invention, it is preferable that the stripping solution contains ethylene carbonate as a main component, and in the stripping step, a stripping solution in which an organic substance derived from the stripped coating material is dissolved is used as a reclaimed stripping solution by ozone treatment.
[0035] 上述した発明によれば、オゾンとの反応性が低!、炭酸エチレン主成分とする剥離 液を採用し、溶解有機物を含む剥離液を装置内で再生し、剥離液として再使用する ため、剥離液の消費量を極めて少なく抑えることが可能となる。オゾン処理による酸 化分解後の低分子化合物は、許容濃度が極めて高いことから、高濃度剥離液でも安 定した剥離が可能となり高!、剥離性能を確保でき、その結果剥離液の消費量を大幅 に削減でき、経済性を向上させるともに環境に対する負荷も低減できる。また、特に、 炭酸エチレンを採用することにより、金属へのダメージを少なくすることができる。  [0035] According to the above-described invention, the reactivity with ozone is low! A stripping solution containing ethylene carbonate as a main component is employed, and the stripping solution containing dissolved organic matter is regenerated in the apparatus and reused as the stripping solution. Therefore, it becomes possible to keep the consumption of the stripping solution very small. Low molecular weight compounds after acidolysis by ozone treatment have an extremely high permissible concentration, so stable stripping is possible even with a high concentration stripping solution, and high stripping performance can be secured, resulting in a reduction in stripping solution consumption. Significant reductions can be made, improving economic efficiency and reducing the burden on the environment. In particular, by using ethylene carbonate, damage to the metal can be reduced.
[0036] また、本発明に係る方法として、除去工程が行われた基体上の有機物の残渣に関 する所定の管理値が 1. 5個/ m2である、ことが好ましい。 [0036] Further, as a method according to the present invention, an organic substance residue on a substrate on which a removal step has been performed is described. It is preferable that the predetermined control value is 1.5 pieces / m 2 .
[0037] 上述した発明によれば、製造された基体の評価基準として、除去工程が行われた 基体上の有機物の残渣に関する 1. 5個/ m2という管理値を採用して基体を管理す ることにより、製品である基体の生産性 (歩留り)を向上させることができる。この結果、 採用した管理値の範囲内であれば、計算装置を備えた循環型剥離装置の無人操業 も可能となり、剥離工程の完全自動化も可能となる。 [0037] According to the above-described invention, the substrate is managed by adopting a management value of 1.5 / m 2 regarding the residue of organic matter on the substrate on which the removal process has been performed as an evaluation standard for the manufactured substrate. As a result, the productivity (yield) of the substrate, which is a product, can be improved. As a result, if it is within the range of the control values adopted, it will be possible to operate the circulating stripper equipped with a calculation device unattended, and the stripping process can be fully automated.
[0038] さらに、本発明に係る方法においては、基体として平面表示パネル又は集積回路 基板を採用することが望ましい。  Furthermore, in the method according to the present invention, it is desirable to employ a flat display panel or an integrated circuit substrate as the base.
[0039] その他、循環型剥離装置の剥離液中の有機物濃度計算をコンピュータに実行させ るためのプログラムとして、  [0039] In addition, as a program for causing a computer to execute the organic substance concentration calculation in the stripping solution of the circulation type stripping device,
基体上の被膜物質に剥離液を接触させることによって、前記被膜物質が剥離して 前記被膜物質由来の有機物として剥離液に溶解する接触槽と、前記接触槽内の前 記有機物が溶解した剥離液を処理して再生剥離液とする処理槽とを有する循環型 剥離装置の剥離液中の有機物濃度計算をコンピュータに実行させるためのプロダラ ムであって、  A contact tank in which the coating substance is peeled off by contacting the coating substance on the substrate to dissolve in the peeling liquid as an organic substance derived from the coating substance, and a peeling liquid in which the organic substance in the contact tank is dissolved A program for causing a computer to calculate the concentration of organic substances in the stripping solution of a circulating stripping device having a treatment tank that is used as a recycled stripping solution.
剥離液に溶解した有機物が接触槽に流入する流入速度のデータと、剥離液が循 環型剥離装置から排出された剥離液の排出速度のデータと、剥離液が接触槽から 処理槽に流出する流出速度のデータとを含む記録されたデータを読み出す読み出 しステップと、  Data on the inflow speed at which organic substances dissolved in the stripping solution flow into the contact tank, data on the discharge speed of the stripping liquid discharged from the circulating stripping device, and the stripping liquid flows from the contact tank to the treatment tank A read step for reading recorded data including outflow velocity data;
第 1の時刻において、接触槽内の有機物濃度のデータと、前記流入速度のデータ と、前記排出速度のデータと、前記流出速度のデータとから、第 1の時刻から単位時 間経過した第 2の時刻における接触槽内の有機物濃度を計算する第 1の濃度計算ス テツプと、  At the first time, from the data on the concentration of organic matter in the contact tank, the data on the inflow rate, the data on the discharge rate, and the data on the outflow rate, the second unit time has elapsed from the first time. A first concentration calculation step for calculating the organic matter concentration in the contact tank at the time of
前記第 2の時刻において、接触槽内の有機物濃度のデータと、前記流入速度のデ ータと、前記排出速度のデータと、前記流出速度のデータと、再生剥離液が処理槽 から前記接触槽へ流入する流入速度のデータと、新たに補充された剥離液が接触 槽に流入する流入速度のデータとから、第 2の時刻から単位時間経過した第 3の時 刻における接触槽内の有機物濃度を計算する第 2の濃度計算ステップと、 前記第 3の時刻における接触槽内の有機物濃度を、前記第 2の時刻における接触 槽内の有機物濃度として、前記第 2の濃度計算ステップにおける接触槽内の有機物 濃度を所定回数繰り返して計算する第 3の濃度計算ステップと、 At the second time, the organic matter concentration data in the contact tank, the inflow speed data, the discharge speed data, the outflow speed data, and the regenerative stripping solution are transferred from the treatment tank to the contact tank. Concentration of organic matter in the contact tank at the third time after the second time from the data of the inflow speed flowing into the tank and the data of the inflow speed at which the newly replenished stripping solution flows into the contact tank A second concentration calculation step for calculating The organic substance concentration in the contact tank at the third time is set as the organic substance concentration in the contact tank at the second time, and the organic substance concentration in the contact tank in the second concentration calculation step is repeatedly calculated a predetermined number of times. 3 concentration calculation steps;
計算された前記有機物濃度を表す信号を出力する信号出力ステップと、 を実行させる、ことも好ましい。  It is also preferable to execute a signal output step of outputting a signal representing the calculated organic substance concentration.
[0040] 上述したプログラムの発明によれば、第 1から第 3の濃度計算ステップを有すること から、記憶されたデータに基づく剥離液中の溶解有機物の濃度を計算するに際し、 剥離開始後の稼動時間に伴う溶解有機物の濃度変化を複雑な物性計算に基づい て計算せずに、簡易に的確に有機物濃度の計算ができ、同時に有機物濃度変化を 予測できる。そして、剥離装置内のプロセスにおける有機物濃度の管理を容易にし、 その結果、剥離液を効率的に利用することも可能となり、剥離液の消費量を大幅に 削減でき、経済性を向上させるとともに環境に対する負荷も低減できる。  [0040] According to the above-described program invention, since the first to third concentration calculation steps are provided, when calculating the concentration of dissolved organic matter in the stripping solution based on the stored data, the operation after the start of stripping is performed. Without calculating the concentration change of dissolved organic matter over time based on complex physical property calculations, it is possible to calculate the organic matter concentration easily and accurately, and at the same time predict the change in organic matter concentration. This also makes it easier to manage the organic substance concentration in the process in the peeling device, and as a result, it is possible to use the stripping solution efficiently, greatly reducing the consumption of the stripping solution, improving economics and improving the environment. Can be reduced.
[0041] また、読み出しステップを有することから、キーボードゃタツチパネル等から直接入 力された理想値が記憶された場合、剥離液中の溶解有機物の濃度変化を予測でき るだけでなぐ予測結果を踏まえたプロセス検討に利用可能となり、さらには、製造管 理者は簡易に適切な操業条件を指示することが可能となる。また、剥離装置に設けら れた計装機器力ゝらの実測値等が入力され記憶された場合には、装置稼動中にお ヽ ても、剥離液中の有機物濃度の変化を予測可能となり、剥離装置内の剥離液の管理 が容易となる。  [0041] Further, since it has a reading step, when an ideal value directly input from a keyboard touch panel or the like is stored, it is based on a prediction result that can only predict a change in the concentration of dissolved organic matter in the stripping solution. In addition, the manufacturing manager can easily specify appropriate operating conditions. In addition, when measured values of instrumentation equipment provided in the stripping device are entered and stored, changes in the organic matter concentration in the stripping solution can be predicted even while the device is in operation. This makes it easier to manage the stripping solution in the stripping device.
[0042] また、信号出力ステップを有することから、表示装置をさらに設けることにより、簡易 に、溶解有機物の濃度変化を把握でき、分析頻度の削減や液抜き等の作業段取りも 可能となる。また、紙や CDROM等の記録媒体に記録することにより、操業指示書の 作成や、過去の計算結果の参照等が容易となる。  [0042] Further, since it has a signal output step, by further providing a display device, it is possible to easily grasp the concentration change of the dissolved organic matter, and it is possible to reduce the frequency of analysis and set up work such as liquid removal. In addition, by recording on a recording medium such as paper or CDROM, it becomes easy to create operational instructions and refer to past calculation results.
[0043] さらに、上述のプログラムとして、剥離液が、環状カーボネートまたは環状エステル であり、循環型剥離装置が、被膜物質由来の有機物が溶解した剥離液を処理槽に おいてオゾン処理を施し、記憶されたデータが、計算された有機物濃度を、処理槽 においてオゾン処理を施す循環型剥離装置における有機物濃度の実測値に補正す るための補正係数を含み、接触槽内の有機物濃度を計算するステップに続いて、計 算された有機物濃度を補正係数により補正し、接触槽内及び処理槽内の有機物濃 度を計算するステップを、有することが望ましい。 [0043] Further, as the above-mentioned program, the stripping solution is a cyclic carbonate or cyclic ester, and the circulation type stripping device performs ozone treatment on the stripping solution in which the organic substance derived from the coating substance is dissolved in the processing tank, and stores it. The calculated data includes a correction coefficient for correcting the calculated organic substance concentration to an actual measurement value of the organic substance concentration in the circulation type stripping apparatus that performs ozone treatment in the treatment tank, and calculates the organic substance concentration in the contact tank. Followed by It is desirable to have a step of correcting the calculated organic substance concentration by a correction coefficient and calculating the organic substance concentration in the contact tank and the treatment tank.
図示された実施形態の説明  Description of illustrated embodiment
[0044] 以下、本発明の実施形態を図面を参照しつつ詳細に説明する。第 1実施形態にお いては、図 1〜図 5を用いて、基体の製造方法の剥離工程について説明し、第 2実施 形態においては、図 6〜図 7を用いて、前記剥離工程に、さらに除去工程を付加した 基体の製造方法につ!、て説明する。  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In the first embodiment, the peeling process of the substrate manufacturing method will be described with reference to FIGS. 1 to 5. In the second embodiment, the peeling process will be described with reference to FIGS. 6 to 7. Further, a method for manufacturing a substrate with an additional removal step will be described.
[0045] ここで、剥離工程とは、基体上の被膜物質に剥離液を接触させて、基体から被膜物 質を剥離する工程であって、剥離した被膜物質由来の有機物が溶解した剥離液を 再生剥離液にする処理を行 ヽ、新たに補充された剥離液と再生剥離液とを基体上の 被膜物質に接触させて、基体から被膜物質を剥離する工程である。また、除去工程 とは、剥離工程により被膜物質が少なくとも一部剥離された基体力ゝら被膜物質由来 の有機物の残渣を除去する工程であって、剥離工程により被膜物質が剥離された基 体の表面を水で洗浄し、洗浄された基体を乾燥空気により乾燥する工程である。  [0045] Here, the peeling step is a step in which the coating material on the substrate is brought into contact with the stripping solution to strip the coating material from the substrate, and the stripping solution in which the organic material derived from the stripped coating material is dissolved is used. In this process, a reclaimed stripper is treated, and the newly replenished stripper and reclaimed stripper are brought into contact with the coating material on the substrate to strip the coating material from the substrate. The removal step is a step of removing organic residue derived from the coating material in addition to the strength of the substrate from which the coating material has been peeled off by the peeling step. In this process, the surface is washed with water, and the washed substrate is dried with dry air.
[0046] < <第 1実施形態 > >  [0046] <First Embodiment>
本発明の基体の製造方法の剥離工程は、循環型剥離装置を用いて、基体上の被 膜物質に剥離液を接触させて、基体から被膜物質を剥離する。  In the peeling process of the method for producing a substrate of the present invention, a coating material is peeled from the substrate by bringing a peeling solution into contact with the film material on the substrate using a circulation type peeling device.
[0047] [循環型剥離装置]  [0047] [Circulation type peeling device]
本実施形態において用いられる循環型剥離装置として、枚様式の連続基体処理装 置を採用し、図 1に本実施形態を説明するための循環型剥離装置の概要図を示す。 循環型剥離装置は、接触槽 10、オゾン処理槽 20、脱気槽 30、再生液槽 40、新液槽 50、接触チャンバ一 60、力も構成されている。  As a circulation type peeling apparatus used in the present embodiment, a sheet-type continuous substrate processing apparatus is adopted, and FIG. 1 shows a schematic diagram of the circulation type peeling apparatus for explaining the present embodiment. The circulation type peeling apparatus is also configured with a contact tank 10, an ozone treatment tank 20, a deaeration tank 30, a regenerated liquid tank 40, a new liquid tank 50, a contact chamber 60, and a force.
[0048] 接触槽 10は、基体上に被膜された被膜物質に対して剥離液の接触処理を行うチヤ ンバー (接触がノズル供給による場合)カゝら流出する剥離液を一時的に貯蔵する槽で ある。また、接触槽 10を、基体上の被膜物質に対して剥離液の接触処理を行う槽( 接触が浸漬による場合)とすることもできる。さらに、基体から被膜物質の剥離を確実 にするため、接触槽を複数連結して用いることも可能である。  [0048] The contact tank 10 is a chamber for temporarily storing the stripping liquid flowing out from the chamber (when contact is made by nozzle supply) that performs the contact processing of the stripping liquid on the coating material coated on the substrate. It is. Further, the contact tank 10 may be a tank (in the case where the contact is by dipping) in which the stripping liquid is contacted with the coating material on the substrate. Furthermore, a plurality of contact tanks can be used in combination in order to ensure peeling of the coating substance from the substrate.
[0049] ここで、剥離液をノズルから有機物の被膜表面に供給して剥離液の液膜を形成さ せ移動させる方法は、基体上の有機物に剥離液を接触させる方法と比較して、剥離 速度の観点力 有利である。一般に、ノズル力 有機物の被膜表面に供給される剥 離液量は、剥離装置の容量と剥離液の循環速度のバランスにより決定される力 ノズ ルカ 供給される剥離液の噴霧圧力が高いほど剥離効果も大きい。なお、剥離速度 を高めるために、基体上の被膜物質に剥離液を接触させる際に超音波を照射するこ とちでさる。 [0049] Here, the peeling liquid is supplied from the nozzle to the surface of the organic film to form a liquid film of the peeling liquid. Compared with the method in which the stripping solution is brought into contact with the organic substance on the substrate, the method of moving and moving is advantageous in terms of stripping speed. In general, nozzle force The amount of stripping solution supplied to the organic coating surface is determined by the balance between the capacity of the stripping device and the circulation rate of the stripping solution. Is also big. In order to increase the peeling speed, ultrasonic waves are applied when the peeling liquid is brought into contact with the coating substance on the substrate.
[0050] オゾン処理槽 20は、接触処理後の剥離液をオゾン処理する槽である。基体上の被 膜物質に剥離液を接触させることにより高分子物質からなる溶解有機物を含む剥離 液を、さらに別の基体に接触処理させるため、オゾン処理槽 20においてオゾン処理 を施して再生剥離液とする。その結果、剥離液の使用量を削減でき、コストを大幅に 削減することができる。オゾン処理が適用可能な剥離液としては、カーボネート基や エステル基を持つ有機化合物が代表的であり、具体的には、例えば、エチレンカー ボネート、プロピレンカーボネート及び γブチロラタトンが好適に使用できる。  [0050] The ozone treatment tank 20 is a tank for ozone treatment of the stripping solution after the contact treatment. In order to bring the stripping solution containing a dissolved organic substance made of a polymer substance into contact with another substrate by bringing the stripping solution into contact with the film material on the substrate, the ozone treatment is performed in the ozone treatment tank 20 and the regenerated stripping solution. And As a result, the amount of stripping solution used can be reduced, and the cost can be greatly reduced. Typical examples of the stripping solution to which ozone treatment can be applied are organic compounds having a carbonate group or an ester group, and specifically, for example, ethylene carbonate, propylene carbonate, and γ-butyrolatatone can be suitably used.
[0051] なお、本実施態様においては、接触処理を行う区域において同時にオゾン処理を 施すと、酸ィ匕力の強いオゾンが基体上の回路構成材料にダメージを与える可能性が あるため、オゾン処理槽 20を別個独立に設けている。  [0051] In the present embodiment, if ozone treatment is simultaneously performed in an area where contact treatment is performed, ozone having strong acidity may damage circuit constituent materials on the substrate. Tank 20 is provided separately and independently.
[0052] 脱気槽 30は、オゾン処理槽 20の流出液を窒素ガス等によりパブリングし、液体中 の溶存オゾンを除去する槽である。再生液槽 40は、脱気槽 30からの再生剥離液を 一時的に貯蔵する槽である。新液槽 50は、消費された剥離液を補充するために純 粋剥離液を供給する槽である。  [0052] The degassing tank 30 is a tank that removes dissolved ozone in the liquid by publishing the effluent of the ozone treatment tank 20 with nitrogen gas or the like. The regenerated liquid tank 40 is a tank for temporarily storing the regenerated stripping liquid from the deaeration tank 30. The new liquid tank 50 is a tank that supplies pure stripping liquid to replenish the stripping liquid that has been consumed.
[0053] 循環型剥離装置における剥離液の流れは、循環系、流入系および流出系の 3系統 に分類される。一般に、流入系及び流出系の流速は循環系の流速と比べて小さい。 循環系は、高分子化合物からなる溶解有機物を含む剥離液及び酸化分解された 低分子化合物が溶解した剥離液が循環する系である。具体的には、接触槽 10から 順に剥離液が循環する、オゾン処理槽 20、脱気槽 30、再生液槽 40、そして接触槽 1 0と、その接続配管、ポンプ、オゾン発生装置等から構成される。  [0053] The flow of the stripping solution in the circulation type stripping apparatus is classified into three systems: a circulation system, an inflow system, and an outflow system. In general, the flow rate of the inflow system and the outflow system is small compared to the flow rate of the circulation system. The circulation system is a system in which a stripping solution containing a dissolved organic substance composed of a high molecular compound and a stripping solution in which an oxidatively decomposed low molecular weight compound is dissolved circulate. Specifically, it consists of ozone treatment tank 20, degassing tank 30, regenerated liquid tank 40, contact tank 10 and its connecting pipe, pump, ozone generator, etc. Is done.
流入系は供給物質が外部力 循環系内に供給される系であり、供給物質は、接触 槽にお 1、て基体表面上からの溶解有機物と、新液槽から配管を通じて供給される純 粋な剥離液とがある。 The inflow system is a system in which the supply substance is supplied into the external force circulation system. The supply substance is dissolved in the contact tank 1, and the pure organic substance supplied from the new liquid tank through the pipe. There is a smart stripper.
流出系は物質が循環系から外部に流出する系であり、流出物質は、接触チャンバ 一 60からの排気であるミスト状の剥離液と、接触チャンバ一 60内における剥離液に よる剥離後の基体に対して後述する洗浄処理を施す水洗槽 70に持ち出される基体 表面上に付着した剥離液とがある。  The outflow system is a system in which substances flow out from the circulation system, and the outflow substances are the mist-like stripping liquid that is exhausted from the contact chamber 60 and the substrate after stripping by the stripping liquid in the contact chamber 60. On the other hand, there is a stripping solution adhering to the surface of the substrate taken out to a washing tank 70 for performing a cleaning treatment described later.
[0054] 接触槽 10や再生液槽 40内の剥離液温度は、剥離速度の観点から高い方が望まし ぐさらに安定な剥離性能を保持するために一定に保つことが望ましい。好ましい液 温は剥離液の種類によって異なるが、極性有機溶媒を用いる場合は 40〜150°Cが 好ましぐ特に 50〜120°Cが好ましい。液温が好ましい液温範囲以下の場合、剥離 速度が低下し、液温が好ましい液温範囲以上の場合、排気量増加による剥離液消 費量の増加を生じ、基体に損傷を与えやすくなる。  [0054] The temperature of the stripping solution in the contact tank 10 or the regenerating solution tank 40 is preferably kept high in order to maintain the more stable stripping performance, which is desirable from the viewpoint of stripping speed. The preferred liquid temperature varies depending on the type of stripping solution, but when a polar organic solvent is used, 40 to 150 ° C is preferred, and 50 to 120 ° C is particularly preferred. When the liquid temperature is below the preferred liquid temperature range, the peeling speed decreases, and when the liquid temperature is above the preferred liquid temperature range, the amount of the stripping liquid consumed increases due to an increase in the displacement, and the substrate is easily damaged.
[0055] 例えば、炭酸エチレンを主成分とする剥離液を用いた場合、被膜物質由来の有機 物の残渣を減少させるためには、剥離液温度を 70〜90°Cに制御することが好ま ヽ 。これは、 70°C未満の場合には、有機物の剥離性や溶解性が低下し、残渣が多くな る傾向にあり、一方、 90°Cを越える場合には、基体の金属膜が腐食し易くなり、欠陥 が多くなる傾向にあることから、歩留りが低下するからである。  [0055] For example, when a stripping solution containing ethylene carbonate as a main component is used, it is preferable to control the stripping solution temperature to 70 to 90 ° C in order to reduce organic residue derived from the coating substance. . This is because when the temperature is lower than 70 ° C, the peelability and solubility of the organic matter tend to decrease and the residue tends to increase. On the other hand, when the temperature exceeds 90 ° C, the metal film on the substrate is corroded. This is because the yield tends to decrease because the defect tends to increase and the number of defects tends to increase.
[0056] オゾン処理槽 20中の剥離液の温度に関しては、オゾンの溶解度の点力 他の槽ょ り低めに設定するのが好ましい。具体的には、 20〜100°Cが好ましぐ特に 40〜80 °Cが好ましい。溶解有機物に対するオゾンによる酸ィ匕分解の分解速度は有機物の種 類により異なるが、分解が十分に進むと分子量 100以下の低分子化合物にまで分解 する。分解生成物としては、グリコール酸、ダリオキシル酸、シユウ酸、ギ酸のような力 ルボン酸と、過酸化水素、水、二酸ィ匕炭素等の低分子物質が知られている。既に述 ベたように、これらの分解物が有機物の剥離性能に及ぼす影響は小さぐ分解されて V、な 、溶解有機物と比べて許容濃度が力なり高!、。  [0056] Regarding the temperature of the stripping solution in the ozone treatment tank 20, it is preferable to set the point of the solubility of ozone at a lower level than other tanks. Specifically, 20 to 100 ° C. is preferable, and 40 to 80 ° C. is particularly preferable. Although the decomposition rate of acid-sodium decomposition by ozone for dissolved organic matter varies depending on the type of organic matter, it decomposes to low molecular weight compounds with a molecular weight of 100 or less when the decomposition proceeds sufficiently. As decomposition products, known rubonic acids such as glycolic acid, daroxylic acid, oxalic acid, and formic acid, and low molecular weight substances such as hydrogen peroxide, water, and carbon dioxide. As already mentioned, the effect of these decomposed products on the peeling performance of organic substances is small. V, and the allowable concentration is higher than dissolved organic substances!
[0057] [有機物濃度計算装置]  [0057] [Organic substance concentration calculation device]
図 2は、本実施形態の有機物濃度計算装置の全体を示す概略構成図である。図 2 に示すように、本装置は、データ記憶手段 100と、補正係数記憶手段 200と、濃度計 算手段 300と、出力手段 400と、制御手段 500とからなる。 [0058] ここで、データ記憶手段 100には、槽内の有機物濃度のデータと、剥離液に溶解し た有機物が接触槽に流入する流入速度のデータと、剥離液が接触槽から循環型剥 離装置から排出された剥離液の排出速度のデータと、剥離液が接触槽から処理槽 に流出する流出速度のデータと、再生剥離液が処理槽から接触槽へ流入する流入 速度のデータと、新たに補充された剥離液が接触槽に流入する流入速度のデータ 等が記憶されている。これらのデータは、有機物濃度を計算する際に入力され記憶さ れたデータに限られず、計算する以前に既に記憶されたデータも含まれる。したがつ て、これらのデータは想定値に限定されず、実測値であってもよぐキーボードやタツ チパネル等カゝら直接入力された有機物濃度データ等の想定値が記憶された場合に は、剥離液中の有機物濃度の変化を予測できるだけでなぐ予測結果を踏まえたプ ロセス検討に利用可能となり、さらには、製造管理者は簡易に適切な操業条件を指 示することが可能となる。また、剥離装置に設けられた計装機器力もの実測値等が入 力されて記憶された場合には、装置稼動中においても、剥離液中の有機物濃度の 変化を予測可能となり、剥離装置内の剥離液の管理が容易となる。 FIG. 2 is a schematic configuration diagram illustrating the entire organic substance concentration calculation apparatus according to the present embodiment. As shown in FIG. 2, this apparatus includes a data storage means 100, a correction coefficient storage means 200, a concentration calculation means 300, an output means 400, and a control means 500. [0058] Here, the data storage means 100 stores data on the concentration of organic matter in the tank, data on the inflow rate at which organic matter dissolved in the stripping solution flows into the contact bath, and the stripping solution from the contact bath. Data on the discharge speed of the stripping liquid discharged from the separation device, data on the outflow speed at which the stripping liquid flows out from the contact tank to the treatment tank, data on the flow rate at which the regenerated stripping liquid flows into the contact tank from the processing tank, Data on the inflow speed at which the newly replenished stripping solution flows into the contact tank is stored. These data are not limited to the data input and stored when calculating the organic substance concentration, but also include data already stored before the calculation. Therefore, these data are not limited to the assumed values. When assumed values such as organic substance concentration data directly input from keyboards, touch panels, etc., which are actually measured values, are stored. In addition, it can be used for process studies based on prediction results that can only predict changes in the concentration of organic substances in the stripping solution, and the production manager can easily specify appropriate operating conditions. In addition, if measured values of instrumentation equipment provided in the stripping device are input and stored, changes in the concentration of organic substances in the stripping solution can be predicted even during operation of the device, and the inside of the stripping device can be predicted. It becomes easy to manage the stripping solution.
[0059] また、補正係数記憶手段 200は、剥離開始後の稼動時間に伴う剥離液中の有機 物濃度を複雑なオゾン分解を考慮せずに計算した有機物濃度を、オゾン処理槽 20 においてオゾン処理を施した循環型剥離装置における有機物濃度の実測値にあわ せる補正をするための補正係数が記憶されている。これは、剥離液に溶解した有機 物がオゾン処理によって低分子化合物に分解されると、有機物の分子が酸化により 酸素を吸収するため、通常、重量が増加するが、重量変化の程度は有機物被膜の 種類、有機物被膜の変性度 (エッチング、アツシング、イオン注入等による)、オゾン 処理の条件 (オゾン濃度、処理時間、温度等)などによって変化するため、重量変化 量を理論的に計算するのは困難である。そこで、後述する濃度計算手段 300により オゾン処理を行わない仮想プロセスに基づき計算された有機物濃度を補正係数によ つて補正することにより有機物濃度を計算する。  [0059] Further, the correction coefficient storage means 200 uses the ozone treatment tank 20 to perform the ozone treatment in the ozone treatment tank 20 by calculating the organic matter concentration in the stripping solution associated with the operation time after the start of stripping without considering complicated ozone decomposition. A correction coefficient is stored for correction to match the measured value of the organic substance concentration in the circulation type stripping apparatus that has been subjected to. This is because when organic substances dissolved in the stripping solution are decomposed into low molecular weight compounds by ozone treatment, the organic molecules absorb oxygen due to oxidation, so the weight usually increases. The amount of change in weight is calculated theoretically because it varies depending on the type of material, the degree of organic film modification (due to etching, ashing, ion implantation, etc.), and the conditions of ozone treatment (ozone concentration, treatment time, temperature, etc.) Have difficulty. Therefore, the organic substance concentration is calculated by correcting the organic substance concentration calculated based on a virtual process in which the ozone treatment is not performed by the concentration calculating means 300 described later using a correction coefficient.
[0060] 濃度計算手段 300は、図 2に示すように、第 1の濃度計算手段 310と第 2の計算手 段 320とからなる。循環型剥離装置内のプロセスにおいて、剥離液の物質収支を計 算することで、有機物濃度計算は可能であるが、本実施態様において提案した簡易 な計算方法を、濃度計算手段 300による有機物濃度計算を示したフローチャートで ある図 3を用いて説明する。 The concentration calculation means 300 includes a first concentration calculation means 310 and a second calculation means 320 as shown in FIG. The organic substance concentration can be calculated by calculating the mass balance of the stripping solution in the process in the circulation type stripping device. This calculation method will be described with reference to FIG. 3 which is a flowchart showing the organic substance concentration calculation by the concentration calculation means 300.
[0061] ここで、定常状態では、循環系を流れる剥離液の液量は一定なので、図 1より、単 位時間当りの溶解有機物を含む剥離液が接触槽 10に流入する液量と、再生剥離液 が接触槽 10へ流入する液量と、新液槽 50から新たに補充された剥離液が接触槽 1 0に流入する液量との合計量は、剥離液が接触槽 10から循環型剥離装置力も排出 された剥離液の液量と、剥離液が接触槽 10から処理槽 20に流出する液量との合計 量に等しくなる。 [0061] Here, in the steady state, the amount of the stripping solution flowing in the circulation system is constant, so from FIG. 1, the amount of stripping solution containing dissolved organic matter per unit time flows into the contact tank 10 and the regeneration rate. The total amount of the liquid that flows into the contact tank 10 and the liquid that is newly replenished from the new liquid tank 50 flows into the contact tank 10 The stripping device force is also equal to the total amount of the stripping solution discharged and the amount of the stripping solution flowing from the contact tank 10 to the treatment tank 20.
[0062] したがって、接触槽 10、オゾン処理槽 20、脱気槽 30、再生液槽 40、新液槽 50の 容積「L」の各々を、 VI、 V2、 V3、 V4、 V5とし、有機物濃度「%」の各々を、 Dl、 D2 、 D3、 D4、 D5とし、剥離液に溶解した有機物の流入速度「 71^11」を1^とし、接触 槽からの流出速度「LZmin」を S +Rとし、新たに補充された剥離液の流入速度「L
Figure imgf000018_0001
再生剥離液の流入速度は S+R「LZmin」となり、装置外部へ の排出速度は R + L「LZmin」となる。
[0062] Therefore, the volume of the contact tank 10, the ozone treatment tank 20, the degassing tank 30, the regenerated liquid tank 40, and the new liquid tank 50 are set to VI, V2, V3, V4, and V5, respectively, and the organic matter concentration Each of the “%” is Dl, D2, D3, D4, D5, the inflow rate of organic matter dissolved in the stripper “71 ^ 11” is 1 ^, and the outflow rate “LZmin” from the contact tank is S + R And the inflow rate of the newly replenished stripping solution “L
Figure imgf000018_0001
The flow rate of the regenerative stripping solution is S + R “LZmin”, and the discharge rate to the outside of the device is R + L “LZmin”.
[0063] 以下に、接触槽 10を例に、有機物濃度計算を説明する。濃度計算手段 300にお ける有機物濃度計算は、初期値により計算する場合は、第 1の濃度計算手段 310に より、その後、計算する場合は、第 2の濃度計算手段 320により行われる。なお、各槽 における有機物濃度計算は同様の方法で行うことができる。  [0063] Hereinafter, the organic substance concentration calculation will be described using the contact tank 10 as an example. The organic substance concentration calculation in the concentration calculation means 300 is performed by the first concentration calculation means 310 when calculating by the initial value, and by the second concentration calculation means 320 when calculating thereafter. The organic substance concentration in each tank can be calculated in the same way.
[0064] 初めに、有機物濃度計算に必要な入力データをデータ記憶手段 100より読み込み 、初期値として設定する(S 10)。読み込まれるデータは、最大計算時刻と、各槽の容 積: V1〜V5「L」と、各槽の有機物濃度 D1〜D5の初期値「%」と、補正係数と、基体 上カゝら剥離液の接触により溶解した有機物が流入する接触槽 10への流入速度: R「 L/minjと、新たに補充された剥離液が新液槽 50から流入する再生液槽 40への流 入速度: L rL/minjと、剥離液が接触槽 10から排出される循環型剥離装置外部へ の排出速度: R+L「LZmin」と、剥離液が接触槽 10から流出する処理槽 20への流 出速度: S+R「LZmin」と、再生剥離液が再生液槽 40から流入する接触槽 10への 流入速度: S+R+L「LZmin」とである。なお、接触槽 10からオゾン処理槽 20、脱 気槽 30、再生液槽 40までの流出速度は S+R「LZmin」である。さらに、時刻 tは初 期化され、 0に設定されている。 [0064] First, input data necessary for organic substance concentration calculation is read from the data storage means 100 and set as an initial value (S10). The data to be read is the maximum calculation time, the volume of each tank: V1 to V5 “L”, the initial value “%” of the organic substance concentration D1 to D5 of each tank, the correction coefficient, and the peeling on the substrate. Flow rate into the contact tank 10 where the dissolved organic matter flows in due to the liquid contact: R “L / minj and the flow rate into the regenerative liquid tank 40 where the newly replenished stripping liquid flows from the new liquid tank 50: L rL / minj and the discharge rate to the outside of the circulating stripping device where the stripping liquid is discharged from the contact tank 10: R + L “LZmin” and the flow to the treatment tank 20 where the stripping liquid flows out from the contact tank 10 Velocity: S + R “LZmin” and inflow rate to contact tank 10 where regenerated stripping solution flows from regenerated liquid tank 40: S + R + L “LZmin”. The outflow rate from the contact tank 10 to the ozone treatment tank 20, the deaeration tank 30, and the regenerated liquid tank 40 is S + R “LZmin”. Furthermore, time t is the first Initialized and set to 0.
[0065] 次に、繰り返し計算を行うため、時刻 tが最大計算時刻を越えているカゝ否カゝ判断す る(Sl l)。時刻 tが最大計算時刻を越えていない (YES)と判別されたときは、時刻 t に単位時間 Δを加え(S12)、単位時間経過後の各槽の有機物濃度 D1〜D4の計 算を行う(S13〜S20)。ここで、第 2の濃度計算手段を用いて繰り返し計算を行う回 数は、(最大計算時刻までの時間) Z (単位時間) 2となる。例えば、最大計算時刻 までの時間が Δの場合、第 1の濃度計算手段により、第 1の時刻から単位時間 Δだ け経過した第 2の時刻における槽内の有機物濃度を計算し、繰り返し計算は行わな い。最大計算時刻までの時間が 2 Δの場合、第 1の時刻から単位時間 Δだけ経過し た第 2の時刻から、さらに単位時間 Δだけ経過した第 3の時刻における槽内の有機 物濃度を第 2の濃度計算手段により計算し、繰り返し計算は行わない。また、最大計 算時刻が 3 Δの場合、第 3の時刻から単位時間 Δだけ経過した時刻から、さらに単位 時間 Δだけ経過した時刻における槽内の有機物濃度を計算するため、第 2の濃度計 算手段を用いた繰り返し計算を 1回行う。  Next, in order to perform repeated calculation, it is determined whether or not the time t exceeds the maximum calculation time (Sl l). If it is determined that time t does not exceed the maximum calculation time (YES), unit time Δ is added to time t (S12), and organic matter concentrations D1 to D4 in each tank after unit time are calculated. (S13-S20). Here, the number of times of repeated calculation using the second concentration calculation means is (time until the maximum calculation time) Z (unit time) 2. For example, if the time until the maximum calculation time is Δ, the first concentration calculation means calculates the organic matter concentration in the tank at the second time when the unit time Δ has elapsed from the first time, and the repeated calculation is Not performed. When the time until the maximum calculation time is 2Δ, the organic matter concentration in the tank at the third time after the unit time Δ has elapsed from the second time when the unit time Δ has elapsed since the first time. The concentration is calculated by the concentration calculation means 2 and is not repeated. In addition, when the maximum calculation time is 3 Δ, the second concentration meter is used to calculate the organic substance concentration in the tank at the time when the unit time Δ has passed since the time when the unit time Δ has passed since the third time. Repeat the calculation once using the calculation means.
[0066] 有機物濃度計算は、はじめに、特定した槽への有機物流入量 Aの計算を行う(S13 )。接触槽 10の有機物流入量 Aは、 R+D4 X (S+R+DZ100で計算できる。そし て、特定した槽カゝらの有機物流出量 Bの計算を行う(S14)。接触槽 10の有機物流出 量 Bは、 Dl X ( (S+R) + (R + L) ) ZlOOで計算できる。次いで、特定した槽内にお ける有機物増加量 Cの計算を行う(S15)。接触槽 10の有機物増加量 Cは、 A— Bで 計算できる。最後に、特定した槽内の有機物濃度 Dを計算する (S16)。接触槽 10の 有機物濃度 Dは、(時刻 tにおける接触槽 10の有機物濃度) + C X VI X 100として 計算する。  [0066] In calculating the organic substance concentration, first, the organic substance inflow amount A into the specified tank is calculated (S13). The organic substance inflow A of the contact tank 10 can be calculated by R + D4 X (S + R + DZ100. Then, the organic substance outflow B of the specified tank is calculated (S14). The organic matter effluent B can be calculated by Dl X ((S + R) + (R + L)) ZlOO, and then the organic matter increase C in the specified tank is calculated (S15). The organic matter increase amount C can be calculated by A- B. Finally, the organic matter concentration D in the identified tank is calculated (S16) .The organic matter concentration D in the contact tank 10 is (the organic matter in the contact tank 10 at time t) Calculate as (concentration) + CX VI X 100.
[0067] そして、有機物濃度計算を行って 、る槽がオゾン処理槽 20であるか否力判断する( S17) 0当該槽がオゾン処理槽 20である (YES)と判別したときには、計算した有機物 濃度を補正係数により補正する(S18)。この結果、オゾン処理後のオゾン処理槽 20 における有機物濃度を計算できる。そして、 S19へ進む。また、当該槽がオゾン槽 20 以外の槽である(NO)と判別したときには、そのまま、 S19へ進む。 [0067] Then, the organic matter concentration is calculated to determine whether or not the tank is the ozone treatment tank 20 (S17). 0 When it is determined that the tank is the ozone treatment tank 20 (YES), the calculated organic matter is calculated. The density is corrected by the correction coefficient (S18). As a result, the organic substance concentration in the ozone treatment tank 20 after the ozone treatment can be calculated. Then proceed to S19. When it is determined that the tank is a tank other than the ozone tank 20 (NO), the process proceeds to S19.
[0068] S19においては、特定した槽における有機物濃度の計算値を保存する(S19)。そ の後、全ての槽について有機物濃度計算を行った力否かを判断する(S20)。全ての 槽について有機物濃度計算をしている (YES)と判別したときは、繰り返し有機物濃 度計算を行うため、 S11に戻る。計算していない槽がある (NO)と判別したときは、全 ての槽につ 、て計算するため S 13に戻る。 [0068] In S19, the calculated value of the organic substance concentration in the identified tank is stored (S19). So After that, it is determined whether or not the organic substance concentration is calculated for all the tanks (S20). If it is determined that the organic matter concentration is being calculated for all tanks (YES), return to S11 to repeat the organic matter concentration calculation. When it is determined that there is a tank that has not been calculated (NO), the process returns to S13 for calculation for all the tanks.
[0069] 一方、時刻 tが最大計算時刻を越えて 、る (NO)と判別したときは、有機物濃度計 算を終了する。以上の計算により、簡易にかつ修正も容易に接触槽 10を含む各槽に おける有機物濃度を計算することができる。  [0069] On the other hand, when the time t exceeds the maximum calculation time and is determined to be (NO), the organic substance concentration calculation is terminated. By the above calculation, the organic substance concentration in each tank including the contact tank 10 can be calculated easily and easily with correction.
[0070] 出力手段 400は、濃度計算手段 300により計算された有機物濃度を表す信号を出 力する。したがって、表示装置を出力手段に設けることにより、オペレータ一は剥離 液中の有機物濃度の変化を視認でき、分析頻度の削減や液抜き等の作業段取りも 可能となり、作業効率の向上も図れる。また、紙や CDROM等の記録媒体に記録す ることにより、操業指示書の作成や、過去の計算結果の参照等が容易となる。  The output unit 400 outputs a signal representing the organic substance concentration calculated by the concentration calculation unit 300. Therefore, by providing a display device in the output means, the operator can visually recognize changes in the organic substance concentration in the stripping solution, and can reduce the frequency of analysis and set up operations such as draining, thereby improving work efficiency. In addition, recording on a recording medium such as paper or CDROM makes it easy to create operational instructions and to reference past calculation results.
[0071] 制御手段 500は、出力手段 400から出力された信号に基づき、有機物濃度の管理 範囲内で、接触槽及び処理槽への流量、圧力、温度等の操作量を制御する。したが つて、有機物濃度実測値と有機物濃度計算値との差異に基づき、自動制御可能とす ることも可能となる。具体的には、溶解有機物の接触槽 10への流入流量、剥離液の 装置外部への排出流量を、直接又は間接的に、流量、圧力、温度等の操作量を調 節することにより制御できる。例えば、剥離液の装置外部への排出流量の調整例とし ては、連続的又は定期的な剥離液の排出が挙げられる。有機物の接触槽 10への流 入流量の調整例として、単位時間当りの基体処理枚数の増減が上げられる。  [0071] Based on the signal output from the output means 400, the control means 500 controls the manipulated variables such as the flow rate, pressure, temperature, etc. to the contact tank and the treatment tank within the organic substance concentration management range. Therefore, automatic control is possible based on the difference between the measured organic substance concentration and the calculated organic substance concentration. Specifically, the flow rate of dissolved organic matter into the contact tank 10 and the discharge flow rate of the stripping solution to the outside of the device can be controlled directly or indirectly by adjusting the manipulated variables such as flow rate, pressure, temperature, etc. . For example, as an example of adjusting the discharge flow rate of the stripping solution to the outside of the apparatus, continuous or periodic discharge of the stripping solution can be mentioned. As an example of adjusting the inflow rate of organic matter into the contact tank 10, the number of substrates processed per unit time can be increased or decreased.
[0072] [有機物濃度計算プログラム]  [0072] [Organic substance concentration calculation program]
図 4は、本実施形態の有機物濃度計算プログラムがコンピュータに実行させる手順 を示したフローチャートである。図 3に示すように、本プログラムは、コンピュータに、は じめに、データ記憶手段 100と補正係数記憶手段 200に記憶されたデータの読み出 し処理を実行させ (S30)、次いで、有機物濃度計算手段 300により有機物濃度計算 を (S31)、そして、計算された有機物濃度を表す信号を出力する(S32)—連の処理 を実行させる。  FIG. 4 is a flowchart showing a procedure that the computer executes the organic substance concentration calculation program of this embodiment. As shown in FIG. 3, the program first causes the computer to execute a process of reading the data stored in the data storage means 100 and the correction coefficient storage means 200 (S30), and then the organic substance concentration The organic substance concentration is calculated by the calculation means 300 (S31), and a signal representing the calculated organic substance concentration is output (S32) —the series of processes is executed.
[0073] 以下、本発明の第 1実施形態を具体的に示すため、下記実施例により詳細に説明 するが、本発明が下記実施例に限定されるものではない。 [0073] Hereinafter, in order to specifically show the first embodiment of the present invention, it will be described in detail by the following examples. However, the present invention is not limited to the following examples.
(試験条件) (Test conditions)
1.剥離液:エチレンカーボネートとして、東亜合成製の高純度 EC (EC— H)をその ま 3;用いた。  1. Stripper: High purity EC (EC-H) manufactured by Toa Gosei was used as ethylene carbonate.
2.基体:サイズ 730 X 920mm2の液晶パネル用ガラス板に、ゲート電極材料である アルミニウムをスパッタリング法で製膜後、クレゾ一ルノボラック系のレジスト榭脂を膜 i. 5 μ mで塗布 ·露光 ·現像処理し、更にアルミニウムのエッチングとアツシング処 理を行ったものを基板として用いた。基板上のレジスト榭脂の被覆率は 50%である。2. Substrate: A glass plate for liquid crystal panels of size 730 x 920mm 2 , aluminum as the gate electrode material is formed by sputtering, and then a cresol novolac resist resin is applied to the film i. · A substrate that had been developed and then etched and ashed with aluminum was used as the substrate. The resist resin coverage on the substrate is 50%.
3.剥離装置と運転条件:図 5に示したとおり、接触槽を 2器設置した構成の循環型剥 離装置を用いた。各槽の容量は接触槽 10、接触槽 11、オゾン処理槽 20、脱気槽 30 、再生液楼 40の川頁に、 40、 40、 40、 20、 40Lである。脱気楼 30力ら再生液楼 40へ の流出速度は 20LZmin、レジスト流入量は 0. 50mLZ基板、基板による剥離液の 持出量は 13. 4mLZ基板、排気によるミスト状剥離液の持出量は l〜4LZHrであ る。基板によって持ち出された剥離液は、洗浄処理後、廃水として排出される。排気 中のミスト状剥離液は、接触処理を行うチャンバ一上に冷却塔 (40°Cに保持)を設置 すること〖こより、 lL/Hrまで低減することができる。排気中のミスト状剥離液と基板と 一緒に持ち出される剥離液の合計量が剥離液の消費量となる。消費量分の剥離液 を新液槽 50から定常的に補給し、剥離装置内の液量を一定に保持する。各槽中の 剥離液の温度について、接触槽 10と再生液槽 40は 80°C、オゾン処理槽 20と脱気 槽 30は 60°C、新液槽 50は 50°Cに設定した。 3. Peeling device and operating conditions: As shown in Fig. 5, a circulation type peeling device with two contact tanks was used. The capacity of each tank is 40, 40, 40, 20, 40 L on the river page of the contact tank 10, the contact tank 11, the ozone treatment tank 20, the degassing tank 30, and the regenerated liquid tower 40. Degassing tower 30 power flow to regeneration liquid tower 40 is 20LZmin, resist inflow volume is 0.5mLZ substrate, stripping solution carry-out amount is 13.4mLZ substrate, mist-like stripping solution is carried out by exhaust Is l ~ 4LZHr. The stripping solution taken out by the substrate is discharged as waste water after the cleaning process. The mist-like stripping solution in the exhaust can be reduced to lL / Hr by installing a cooling tower (maintained at 40 ° C) above the chamber where the contact treatment is performed. The total amount of stripping liquid in the exhaust and the stripping liquid brought out together with the substrate is the consumption of the stripping liquid. The stripping liquid for consumption is regularly replenished from the new liquid tank 50, and the liquid volume in the stripping device is kept constant. The temperature of the stripping solution in each tank was set to 80 ° C for the contact tank 10 and regenerated liquid tank 40, 60 ° C for the ozone treatment tank 20 and degassing tank 30, and 50 ° C for the new liquid tank 50.
4.オゾン発生装置の条件:酸素ガスを原料とする放電式オゾン発生装置により、濃 度 200mgZLのオゾン含有酸素ガスを流量 15LZminで定常的にオゾン処理槽中 に導人した。  4. Conditions for ozone generator: Ozone-containing oxygen gas with a concentration of 200 mgZL was introduced into the ozone treatment tank at a flow rate of 15 LZmin by a discharge ozone generator using oxygen gas as a raw material.
5.補正係数の決定:基板の処理速度を 60枚 ZHrとし、冷却塔を設置した上で排気 による剥離液持出量 lLZHrとして運転した。この条件での再生液槽 40のレジスト濃 度計算値 (オゾン分解が起らないと仮定して計算したレジスト濃度)と、レジスト分解物 (カルボン酸及びカルボン酸エステル)の実測濃度は、 1日後、 3日後、 5日後の推算 値 Z実測値で、各々 0. 0043/0. 0065, 0. 0103/0. 0152, 0. 0141/0. 021 6であり、補正係数は 1. 51と決定した。なお、有機物濃度の単位は、レジスト— kgZ Lである。 5. Determination of correction factor: The substrate processing speed was set to 60 sheets ZHr, and a cooling tower was installed, and the operation was performed with the removal liquid removal amount lLZHr by exhaust. Under this condition, the calculated concentration of resist in the regenerated solution tank 40 (resist concentration calculated assuming that ozone decomposition does not occur) and the actual concentration of resist decomposition products (carboxylic acid and carboxylic acid ester) are , Estimated value after 3 days, 5 days later Z Measured value, 0.0043 / 0.0065, 0. 0103/0. 0152, 0. 0141/0. 021 The correction factor was determined to be 1.51. Note that the unit of organic substance concentration is resist kgZL.
6.許容濃度の決定  6. Determination of acceptable concentration
上記の装置稼動条件において、 5日後の段階で基板表面にレジスト残渣が観察さ れたことから、レジスト分解物の許容濃度は 0. 0216レジスト一 kgZLと分力つた。な お、レジスト残渣の問題を回避するため、稼動時間 4日毎に剥離装置内を停止し、装 置内の剥離液全量を新液と交換した。この液交換作業には 8時間を要した。  Under the above operating conditions, a resist residue was observed on the substrate surface after 5 days. Therefore, the allowable concentration of the resist decomposition product was divided into 0.0216 resist per kgZL. In order to avoid the problem of resist residues, the inside of the peeling device was stopped every 4 days of operation time, and the entire amount of the peeling solution in the device was replaced with a new solution. This liquid exchange operation took 8 hours.
[0074] (比較例) [0074] (Comparative example)
基板の処理速度を 60枚 ZHrとする上記の試験条件において、装置稼動 4日 +液 交換 8時間のサイクルで剥離装置を運転すると、月当りの基板処理量は 39, 877枚 、剥離液の全消費量は 2445Lであり、基板 1枚当りの消費量に換算すると 61mLとな る。  Under the above test conditions where the substrate processing speed is 60 sheets ZHr, when the stripper is operated in a cycle of 4 days of machine operation + 8 hours of liquid replacement, the substrate throughput per month is 39,877 sheets, Consumption is 2445L, which is 61mL in terms of consumption per substrate.
[0075] (実施例 1)  [0075] (Example 1)
基板の処理速度を半分に下げ 30枚 ZHrとして、液交換をおこなわず、連続稼動さ せて剥離処理を行った。この条件でのレジスト分解物濃度の計算結果 (補正係数は 1 . 51を使用)と実測値を表 2に示す。計算結果、平衡濃度は 0. 00195kgZLであつ たため、運転時間を延ばしても許容濃度を越えることはないと予想された。剥離装置 の運転を 30日まで続けた力 剥離性能に問題は見られな力つた。表 2に示す通り、 稼動日数 5日、 10日、 15日でのレジスト分解物濃度実測値と有機物濃度計算値とを 比較すると、精度良く有機物濃度が計算されていることがわかる。  The substrate processing speed was reduced by half to 30 sheets ZHr, and liquid separation was not performed, and stripping was performed by continuous operation. Table 2 shows the results of calculation of resist degradation product concentration under these conditions (correction coefficient is 1.51) and measured values. As a result of the calculation, the equilibrium concentration was 0.00195 kgZL, so it was expected that the allowable concentration would not be exceeded even if the operation time was extended. The force that continued operation of the peeling device until 30 days. As shown in Table 2, it can be seen that the organic substance concentration was calculated with high accuracy by comparing the measured resist decomposition product concentration values with the calculated organic concentration values on the 5th, 10th, and 15th working days.
[0076] この場合、月当りの基板処理量は 21, 600枚、月当りの液状剥離液の全消費量は 1009L、基板 1枚当りの消費量は 47mLとなり、試験条件と比較して約 24%の剥離 液が節約できた。更には煩雑な剥離液交換作業が省略でき作業工数を低減すること ができた。  [0076] In this case, the substrate processing amount per month was 21,600, the total consumption of liquid stripper liquid per month was 1009L, and the consumption per substrate was 47mL, which was approximately 24 compared to the test conditions. % Stripping solution was saved. Furthermore, the complicated stripping solution replacement work can be omitted and the number of work steps can be reduced.
[0077] (実施例 2)  [0077] (Example 2)
基板の処理速度を 60枚 ZHrに戻し、冷却塔を実施例 1より短くして排気による剥 離液持出量を 1. 8LZHrに増やして運転した。この条件でのレジスト分解物濃度の 計算結果と実測値を表 3に示した。平衡濃度の計算結果は 0. 0210kgZLであった ため、運転時間を延ばしても許容濃度を越えることはないと予想された。剥離装置の 運転を 30日まで続けたが、剥離性能に問題は見られな力 た。表 3に示す通り、実 施例 1と同様、稼動日数 5日、 10日、 15日でのレジスト分解物濃度実測値と有機物 濃度計算値とを比較すると、精度良く有機物濃度が計算されていることがわかる。 The substrate processing speed was returned to 60 sheets ZHr, the cooling tower was made shorter than in Example 1, and the amount of exfoliated liquid taken out by exhaust was increased to 1.8 LZHr. Table 3 shows the calculated results and actual measured values of the resist degradation product concentration under these conditions. The calculated equilibrium concentration was 0.0210 kgZL. Therefore, it was expected that the allowable concentration would not be exceeded even if the operation time was extended. The stripping machine continued to run for 30 days, but there was no problem with the stripping performance. As shown in Table 3, as in Example 1, comparing the measured resist decomposition product concentration values with the calculated organic material concentration values on the 5th, 10th, and 15th working days, the organic concentration was calculated accurately. I understand that.
[0078] この場合、月当りの基板処理量は 43, 200枚、液状剥離液の全消費量は 1875L、 基板 1枚当りの消費量は 43mLとなり、試験条件と比較して約 29%の剥離液が節約 でき、生産量も約 7%向上した。また、実施例 1と同様、剥離液交換作業に伴う作業 工数も不要である。 [0078] In this case, the substrate processing volume per month is 43,200, the total consumption of the liquid stripping solution is 1875L, and the consumption per substrate is 43mL, which is about 29% peeling compared to the test conditions. The liquid was saved and the production volume was improved by about 7%. In addition, as in Example 1, the work man-hour associated with the stripping solution replacement work is not necessary.
[0079] 以下の表 1に比較例、実施例 1及び実施例 2に記載の稼動条件と剥離液消費量を 示す。  [0079] Table 1 below shows the operating conditions and stripping solution consumption described in Comparative Example, Example 1 and Example 2.
[0080]  [0080]
3¾ 1 3¾ 1
Figure imgf000023_0001
Figure imgf000023_0001
注) 1月 = 30日 = 720Hrとして計算した [0081] 表 2 Note) Calculated as January = 30th = 720Hr [0081] Table 2
Figure imgf000024_0001
Figure imgf000024_0001
[0083] < <第 2実施形態 > > [0083] <Second Embodiment>
本発明の基体の製造方法の除去工程は、循環型剥離装置を用いた剥離工程によ り被膜物質が少なくとも一部剥離された基体から、被膜物質由来の有機物の残渣を 除去する。第 2実施形態においては、上述の第 1実施形態において使用された循環 型剥離装置と、有機物濃度計算装置と、有機物濃度計算プログラムとに、さらに、水 洗層 70と、乾燥装置 80とが用いられる。すなわち、本実施形態においては、接触槽 10、オゾン処理槽 20、脱気槽 30、再生液槽 40、新液槽 50及び接触チャンバ一 60 から構成されるとともに、枚様式の連続基体処理装置が採用された循環型剥離装置 と、水洗層 70と、乾燥装置 80とが用いられる。図 6は本発明の第 2実施形態を説明 するための循環型剥離装置の概要図を示したものである。  In the removing step of the substrate manufacturing method of the present invention, the organic substance residue derived from the coating material is removed from the substrate from which the coating material has been at least partially peeled by the peeling step using a circulation type peeling device. In the second embodiment, the circulation type peeling device, the organic matter concentration calculation device, and the organic matter concentration calculation program used in the first embodiment described above are further used by the washing layer 70 and the drying device 80. It is done. That is, in the present embodiment, the contact tank 10, the ozone treatment tank 20, the deaeration tank 30, the regenerative liquid tank 40, the new liquid tank 50, and the contact chamber 60 are used, and a single substrate type continuous substrate processing apparatus is provided. The circulation type peeling device, the washing layer 70, and the drying device 80 are used. FIG. 6 is a schematic view of a circulation type peeling apparatus for explaining the second embodiment of the present invention.
[0084] なお、第 1実施形態と共通する構成要素には、同一の符号を付した。すなわち、同 一の符号が付された構成要素は、同一の構成要素であるとともに、同一の機能を有 する。 [0085] 水洗槽 70は、接触チャンバ一 60内における剥離液による剥離後の基体に付着し た剥離液及びレジスト残渣を純水により洗浄除去する槽である。そして、基体から洗 浄除去された剥離液及びレジスト残渣は、図示しな!ヽ後工程の廃水処理工程により 処理される。 Note that the same reference numerals are given to components common to the first embodiment. In other words, the components given the same reference numerals are the same components and have the same functions. The water rinsing tank 70 is a tank that cleans and removes the stripping solution and the resist residue adhering to the substrate after stripping by the stripping solution in the contact chamber 60 with pure water. Then, the stripping solution and the resist residue cleaned and removed from the substrate are processed in a waste water treatment process, which is not shown in the drawings.
[0086] 乾燥装置 80は、水洗槽 70において純水による洗浄処理が行われた基体を、乾燥 空気により乾燥する槽である。乾燥は遠心脱水、熱風、赤外輻射等の方法により行 われ、基体を乾燥させるとともに、基体表面上力もレジスト残渣を除去する。この結果 、レジスト残渣が基体表面に再付着することにより生じる基体表面の汚染を防止する  [0086] The drying device 80 is a tank that dries the substrate, which has been washed with pure water in the water washing tank 70, with dry air. Drying is performed by a method such as centrifugal dehydration, hot air, infrared radiation, etc., and the substrate is dried, and the resist residue is also removed by the force on the substrate surface. As a result, the substrate surface is prevented from being contaminated due to the resist residue reattaching to the substrate surface.
[0087] そして、水洗槽 70と乾燥装置 80とを用いた除去工程により、基体上のレジスト残渣 を除去した後、品質検査を行う。これは、品質検査の評価基準の例として、基体上の レジスト残渣の密度が挙げられ、例えば基体が液晶用パネルである場合、基体上に レジスト残渣が存在すると、残渣の付着した周辺部分が画素として機能しな 、ことか ら、表示中の液晶パネル上に黒点又は白点となる確率が高くなるからである。したが つて、除去工程の後、基体上にレジスト残渣が存在しないことが望ましいが、本実施 形態においては、レジスト残渣に関する液晶パネルの製造業者の要求基準範囲内 で、ぼぼ 100%の歩留まりを達成可能な評価基準を管理値として採用した。具体的 には、管理値として、レジスト残渣の密度 1. 5個 Zm2を採用した。この結果、製造さ れた基体の評価基準として、除去工程が行われた基体表面上のレジスト残渣の密度 1. 5個 Zm2という管理値を採用したことにより、製品である基体の生産性 (歩留り)を ほぼ 100%の水準で達成することができるとともに、管理値の範囲内であれば、剥離 工程及び除去工程の完全自動化も可能となる。 [0087] Then, the resist residue on the substrate is removed by a removing process using the water washing tank 70 and the drying device 80, and then a quality inspection is performed. Examples of quality inspection evaluation criteria include the density of resist residue on the substrate. For example, when the substrate is a liquid crystal panel, if there is a resist residue on the substrate, the peripheral portion to which the residue is attached is a pixel. Therefore, the probability of black spots or white spots on the liquid crystal panel being displayed increases. Therefore, it is desirable that there is no resist residue on the substrate after the removal step, but in this embodiment, a yield of about 100% is achieved within the required standard range of the liquid crystal panel manufacturer regarding the resist residue. Possible evaluation criteria were adopted as management values. Specifically, a resist residue density of 1.5 Zm 2 was used as the control value. As a result, by adopting a control value of 1.5 resist Zm 2 density of resist residue on the surface of the substrate where the removal process was performed as an evaluation standard for the manufactured substrate, the productivity of the product substrate ( (Yield) can be achieved at a level of almost 100%, and if it is within the control value range, the stripping process and removal process can be fully automated.
[0088] 以下、本発明の第 2実施形態を具体的に示すため、下記実施例により詳細に説明 するが、本発明が下記実施例に限定されるものではない。また、第 2実施形態におけ る試験条件は、第 1実施形態の試験条件と共通の試験条件を採用した。  [0088] Hereinafter, the second embodiment of the present invention will be specifically described with reference to the following examples. However, the present invention is not limited to the following examples. The test conditions in the second embodiment are the same as the test conditions in the first embodiment.
[0089] (比較例 1)  [0089] (Comparative Example 1)
基板の処理速度を 60枚 ZHrとし、排気による剥離液持出量 lLZHrとして 30日間 連続運転した。剥離工程及び除去工程の後、回路基板を無作為に 10枚抜き取り、 基板表面を光学顕微鏡で観察した結果、基板表面上のレジスト残渣数は平均 4. 6 個 Zm2であった。また、最終的な回路基板の歩留りは 10%以下であった。 The substrate processing speed was set to 60 sheets ZHr, and the stripper removal amount by exhaust lLZHr was continuously operated for 30 days. After the peeling process and the removing process, 10 circuit boards are randomly extracted, As a result of observation of the substrate surface with an optical microscope, the resist remaining渣数on the substrate surface mean 4. was six Zm 2. The final circuit board yield was 10% or less.
[0090] (比較例 2) [0090] (Comparative Example 2)
上述の第 1実施形態の比較例と同様に、基板の処理速度を 60枚 ZHrとする上記 の試験条件において、装置稼動 4日 +液交換 8時間のサイクルで剥離装置を運転す ると、月当りの基板処理量は 39, 877枚、剥離液の全消費量は 2445Lであり、基板 1枚当りの消費量に換算すると 61mLとなる。そして、剥離工程及び除去工程の後、 回路基板を無作為に 10枚抜き取り、基板表面を光学顕微鏡で観察した結果、基板 表面上のレジスト残渣数は平均 2. 1個 Zm2であった。また、最終的な回路基板の歩 留りは 65%であった。 As in the comparative example of the first embodiment described above, when the peeling device is operated in a cycle of 4 days of apparatus operation + 8 hours of liquid exchange under the above test conditions where the substrate processing speed is 60 sheets ZHr, The substrate processing amount per unit is 39,877, and the total consumption of stripping solution is 2445L, which is 61mL when converted to the consumption per substrate. After the separation step and removing step, sampling ten circuit boards randomly, result of observation of the substrate surface with an optical microscope, the resist remaining渣数on the substrate surface mean 2. was one Zm 2. The final circuit board yield was 65%.
[0091] (実施例 3) [0091] (Example 3)
上述の第 1実施形態の実施例 1と同様の条件で剥離工程を行い、さらに、除去ェ 程を行った後、回路基板を無作為に 10枚抜き取り、基板表面を光学顕微鏡で観察 した結果、基板表面上のレジスト残渣数は平均 0. 4個 Zm2であった。また、最終的 な回路基板の歩留りは 95%であった。 After performing the peeling process under the same conditions as in Example 1 of the first embodiment described above, and further performing the removal process, 10 circuit boards were randomly extracted, and the substrate surface was observed with an optical microscope. resist residue渣数on the substrate surface was averaged 0.4 amino Zm 2. The final circuit board yield was 95%.
[0092] (実施例 4) [0092] (Example 4)
上述の第 1実施形態の実施例 2と同様の条件で剥離工程を行い、さらに、除去ェ 程を行った後、回路基板を無作為に 10枚抜き取り、基板表面を光学顕微鏡で観察 した結果、基板表面上のレジスト残渣数は平均 1. 0個 Zm2であった。また、最終的 な回路基板の歩留りは 91%であった。 The peeling process was performed under the same conditions as in Example 2 of the first embodiment described above, and after performing the removal process, 10 circuit boards were randomly extracted, and the substrate surface was observed with an optical microscope. resist residue渣数on the substrate surface was averaged 1.0 amino Zm 2. The final circuit board yield was 91%.
[0093] 以下に、比較例 1、比較例 2、実施例 3及び実施例 4に記載の稼動条件、剥離液消 費量、レジスト残渣数及び歩留りを示す。 [0094] [0093] The operating conditions, stripping solution consumption, resist residue number and yield described in Comparative Example 1, Comparative Example 2, Example 3 and Example 4 are shown below. [0094]
表 4  Table 4
Figure imgf000027_0001
Figure imgf000027_0001
注 1 ) 1月 = 30曰 = 720Hrとして計算した  Note 1) Calculated as January = 30 曰 = 720Hr
注 2)工数は、装置監視作業に 1人、液交換作業に 4人かかるとして計算した  Note 2) The number of man-hours was calculated assuming that it takes one person for equipment monitoring work and four people for liquid replacement work
[0095] 以上のように、第 1実施形態によれば、剥離工程を含むことから、再生剥離液を用 いて基体上の被膜物質に接触させて基体から被膜物質を剥離するため、新たに補 充する剥離液を極めて少なくすることができる。この結果、剥離液を効率的に利用す ることも可能となり、剥離液の消費量を大幅に削減でき、経済性を向上させるとともに 、環境に対する負荷も低減させることができる。 [0095] As described above, according to the first embodiment, since the peeling step is included, the coating material is peeled off from the substrate by using the regenerative stripping solution to come into contact with the coating material. The peeling liquid to be filled can be extremely reduced. As a result, it becomes possible to use the stripping solution efficiently, and the consumption of the stripping solution can be greatly reduced, the economy can be improved, and the burden on the environment can be reduced.
[0096] さらに、剥離液中の溶解有機物の濃度を計算するに際し、剥離開始後の稼動時間 に伴う溶解有機物の濃度変化を複雑な物性計算に基づいて計算せずに、簡易に的 確に有機物濃度を計算でき、同時に有機物濃度の変化を予測できる。そして、剥離 装置内のプロセスにおける有機物濃度の管理を容易にし、その結果、濃度管理のた めに必要な煩雑な薬液交換作業も削減でき、剥離液を効率的に利用することも可能 となり、剥離液の消費量を大幅に削減でき、経済性を向上させるとともに環境に対す る負荷も低減できる。 [0096] Further, when calculating the concentration of dissolved organic matter in the stripping solution, the concentration change of dissolved organic matter with the operation time after the start of stripping is not calculated based on complicated physical property calculations, but the organic matter is simply and accurately calculated. Concentration can be calculated and changes in organic concentration can be predicted at the same time. In addition, the organic substance concentration in the process in the stripping device can be easily managed. As a result, complicated chemical exchange work required for concentration management can be reduced, and stripping solution can be used efficiently. As a result, the consumption of the stripping solution can be greatly reduced, the economy can be improved and the burden on the environment can be reduced.
[0097] また、基板の大型化によって剥離装置や運転条件が変更された場合でも、容易に 溶解有機物の濃度が計算できるため、装置立上げ時の条件設定作業が短時間で済 み、トラブル時の対処も容易になる。  [0097] In addition, even when the peeling device and operating conditions are changed due to the increase in size of the substrate, the concentration of dissolved organic matter can be easily calculated. It becomes easy to deal with.
[0098] さらに、第 2実施形態によれば、上述の第 1実施形態と同様に、循環型剥離装置内 の有機物濃度を簡易に的確に計算できるともに、有機物濃度の変化を予測できる。 したがって、循環型剥離装置が運転管理値の基準内で稼動できるため、回路基板の 汚染、すなわち、レジスト残渣の付着が回避できる。この結果、回路基板の歩留りを 大幅に向上することができる。  Furthermore, according to the second embodiment, as in the first embodiment described above, the organic substance concentration in the circulation type peeling apparatus can be calculated easily and accurately, and a change in the organic substance concentration can be predicted. Therefore, since the circulation type peeling apparatus can be operated within the standard of operation control value, contamination of the circuit board, that is, adhesion of resist residue can be avoided. As a result, the yield of circuit boards can be greatly improved.
[0099] また、前記除去工程を含むことから、基体上への被膜物質が再付着することによる 基体表面の汚染を防止して、不良品が発生することによる製品歩留まりを向上させる ことができる。  [0099] In addition, since the removal step is included, contamination of the substrate surface due to the reattachment of the coating substance onto the substrate can be prevented, and the product yield due to the occurrence of defective products can be improved.
[0100] さらに、除去工程が行われた基体上の有機物の残渣が所定の管理値以下であるこ とから、製品である基体の品質管理基準として、基体上の有機物の残渣の個数等を 採用した場合、製品の歩留りを大幅に向上することができるとともに、品質管理基準 内にお 、て連続製造も可能となる。  [0100] Furthermore, since the organic residue on the substrate after the removal step was below a predetermined control value, the number of organic residues on the substrate was adopted as the quality control standard of the substrate as a product. In this case, the product yield can be greatly improved, and continuous production is also possible within the quality control standards.
[0101] なお、本実施形態においては、オゾン処理機構を含む剥離装置について例示した 力 上述の実施形態には限られず、その他様々な実施形態が含まれる。例えば、ォ ゾン処理を行わない従来の剥離装置の場合、更に濃度管理が容易となり、工業的価 値を大きくすることができる。  [0101] In the present embodiment, the force exemplified for the peeling apparatus including the ozone treatment mechanism is not limited to the above-described embodiment, and includes various other embodiments. For example, in the case of a conventional peeling apparatus that does not perform ozone treatment, the concentration management becomes easier and the industrial value can be increased.
[0102] [発明の効果]  [0102] [Effect of the invention]
上述した発明によれば、前記剥離工程を含むことから、再生剥離液を用いて基体 上の被膜物質に接触させて基体から被膜物質を剥離するため、新たに補充する剥 離液を極めて少なくすることができる。この結果、剥離液を効率的に利用することも可 能となり、剥離液の消費量を大幅に削減でき、経済性を向上させるとともに、環境に 対する負荷も低減させることができる。  According to the above-described invention, since the peeling step is included, since the coating material is peeled off from the substrate by contacting the coating material on the substrate using the regenerative peeling solution, the amount of the newly replenished peeling solution is extremely reduced. be able to. As a result, it becomes possible to use the stripping solution efficiently, and the consumption of the stripping solution can be greatly reduced, the economic efficiency can be improved, and the burden on the environment can be reduced.
[0103] また、前記除去工程を含むことから、基体上への被膜物質が再付着することによる 基体表面の汚染を防止して、不良品が発生することによる製品歩留まりを向上させる ことができる。 [0103] Further, since the removal step is included, the coating substance on the substrate is reattached. It is possible to prevent contamination of the substrate surface and improve the product yield due to generation of defective products.
さらに、除去工程が行われた基体上の有機物の残渣が所定の管理値以下であるこ とから、製品である基体の品質管理基準として、基体上の有機物の残渣の個数等を 採用した場合、製品の歩留りを大幅に向上することができるとともに、品質管理基準 内にお 、て連続製造も可能となる。  Furthermore, since the organic residue on the substrate that has been subjected to the removal process is less than or equal to a predetermined control value, if the number of organic residues on the substrate is adopted as the quality control standard of the substrate that is the product, Yield can be greatly improved, and continuous production is also possible within the quality control standards.

Claims

請求の範囲 The scope of the claims
[1] 基体上の被膜物質に剥離液を接触させて前記基体から前記被膜物質を剥離する 剥離工程と、前記剥離工程により被膜物質が少なくとも一部剥離された基体力 前 記被膜物質由来の有機物の残渣を除去する除去工程と、を含む基体の製造方法で あって、  [1] A peeling step in which a coating solution on a substrate is brought into contact with a peeling solution to peel the coating material from the substrate, and a substrate force in which the coating material is at least partially peeled off by the peeling step. A removal step of removing the residue, and a method of manufacturing a substrate comprising:
前記剥離工程は、  The peeling step includes
剥離した前記被膜物質由来の有機物が溶解した剥離液を再生剥離液にする処理 を行う工程と、  A step of carrying out a process of using a stripping solution in which an organic substance derived from the peeled coating material is dissolved as a reclaimed stripping solution;
新たに補充された剥離液と前記再生剥離液とを前記基体上の被膜物質に接触さ せて、前記基体から前記被膜物質を剥離する工程と、  Bringing the newly replenished stripping solution and the reclaimed stripping solution into contact with the coating material on the substrate to strip the coating material from the substrate;
を含み、  Including
前記除去工程は、  The removal step includes
前記剥離工程により前記被膜物質が剥離された前記基体の表面を水で洗浄する 工程と、  Washing the surface of the substrate from which the coating substance has been peeled off in the peeling step with water;
洗浄された前記基体を乾燥空気により乾燥する工程と、  Drying the cleaned substrate with dry air;
を含み、  Including
前記除去工程が行われた前記基体上の前記有機物の残渣が、所定の管理値以下 である、  The organic residue on the substrate on which the removal step has been performed is a predetermined control value or less.
基体の製造方法。  A method for manufacturing a substrate.
[2] 前記剥離工程には、  [2] In the peeling step,
前記被膜物質が剥離して前記被膜物質由来の有機物が溶解した剥離液を受ける 接触槽と、前記接触槽内の前記有機物が溶解した剥離液を前記再生剥離液にする 処理が行われる処理槽とを有する循環型剥離装置が用いられ、  A contact tank that receives a stripping solution in which the coating material is peeled off and an organic substance derived from the coating material is dissolved; a processing tank in which the stripping solution in which the organic matter is dissolved in the contact tank is used as the regenerative stripping solution; A circulation type peeling device having
前記循環型剥離装置の剥離液中の有機物濃度は、  The organic substance concentration in the stripping solution of the circulating stripping device is
剥離液に溶解した有機物が前記接触槽に流入する流入速度のデータと、剥離液 が前記循環型剥離装置から排出された剥離液の排出速度のデータと、剥離液が前 記接触槽力 前記処理槽に流出する流出速度のデータとを含むデータが記憶され たデータ記憶手段と、 第 1の時刻において、前記接触槽内の有機物濃度のデータと、前記流入速度のデ ータと、前記排出速度のデータと、前記流出速度のデータとから、前記第 1の時刻か ら単位時間経過した第 2の時刻における前記接触槽内の有機物濃度を計算する第 1 の濃度計算手段と、 Data on the inflow speed at which the organic matter dissolved in the stripping solution flows into the contact tank, data on the discharge speed of the stripping liquid discharged from the circulation type stripping device, and the stripping liquid is the contact tank force. Data storage means storing data including outflow rate data flowing into the tank; At the first time, from the data of the organic substance concentration in the contact tank, the data of the inflow rate, the data of the discharge rate, and the data of the outflow rate, the unit time from the first time. A first concentration calculating means for calculating an organic matter concentration in the contact tank at a second time after passing;
前記第 2の時刻において、前記接触槽内の有機物濃度のデータと、前記流入速度 のデータと、前記排出速度のデータと、前記流出速度のデータと、再生剥離液が前 記処理槽から前記接触槽へ流入する流入速度のデータと、新たに補充された剥離 液が前記接触槽に流入する流入速度のデータとから、前記第 2の時刻から単位時間 経過した第 3の時刻における接触槽内の有機物濃度を計算する第 2の濃度計算手 段とを含む濃度計算手段であり、かつ、  At the second time, the organic matter concentration data in the contact tank, the inflow speed data, the discharge speed data, the outflow speed data, and the regenerative stripping solution are transferred from the treatment tank to the contact tank. From the data of the inflow velocity flowing into the tank and the data of the inflow velocity at which the newly replenished stripping liquid flows into the contact tank, the inside of the contact tank at the third time after a unit time has elapsed from the second time. A concentration calculating means including a second concentration calculating means for calculating an organic substance concentration, and
前記第 2の濃度計算手段を用いて、前記第 3の時刻における前記接触槽内の有機 物濃度を、前記第 2の時刻における前記接触槽内の有機物濃度として、前記接触槽 内の有機物濃度を、所定回数繰り返して計算する濃度計算手段と、  Using the second concentration calculation means, the organic substance concentration in the contact tank at the third time is set as the organic substance concentration in the contact tank at the second time, and the organic substance concentration in the contact tank is Concentration calculating means for repeatedly calculating a predetermined number of times;
前記濃度計算手段により計算された前記有機物濃度を表す信号を出力する出力 手段と、  Output means for outputting a signal representing the organic substance concentration calculated by the concentration calculating means;
を有する計算装置により計算される、  Calculated by a computing device having
請求項 1記載の基体の製造方法。  The method for producing a substrate according to claim 1.
[3] 前記計算装置は、前記濃度計算手段により計算された有機物濃度と、前記被膜物 質由来の有機物が溶解した剥離液を前記再生剥離液にする処理を行う循環型剥離 装置における有機物濃度の実測値とに基づいて得られた補正係数が記憶された補 正係数記憶手段を有し、 [3] The calculation device includes an organic substance concentration calculated by the concentration calculating means, and an organic substance concentration in a circulation type peeling apparatus that performs a process of using a stripping solution in which an organic substance derived from the coating material is dissolved as the recycled stripping solution. Correction coefficient storage means for storing a correction coefficient obtained based on the actual measurement value,
前記濃度計算手段が、前記計算された有機物濃度と前記補正係数とにより補正後 の有機物濃度を計算し、前記補正後の有機物濃度により前記接触槽内及び前記処 理槽内の有機物濃度を計算する、  The concentration calculation means calculates the corrected organic substance concentration based on the calculated organic substance concentration and the correction coefficient, and calculates the organic substance concentration in the contact tank and the treatment tank based on the corrected organic substance concentration. ,
請求項 2記載の基体の製造方法。  The method for producing a substrate according to claim 2.
[4] 前記計算装置は、前記出力手段から出力された前記信号に基づき、前記接触槽 及び前記処理槽への流量を含む操作量を制御する制御手段を、さらに有する、 請求項 3記載の基体の製造方法。 4. The substrate according to claim 3, wherein the calculation device further includes a control unit that controls an operation amount including a flow rate to the contact tank and the processing tank based on the signal output from the output unit. Manufacturing method.
[5] 前記剥離液は炭酸エチレンを主成分とし、 [5] The stripper contains ethylene carbonate as a main component,
前記剥離工程は剥離した前記被膜物質由来の有機物が溶解した剥離液をオゾン 処理により前記再生剥離液とする、  In the stripping step, a stripping solution in which an organic substance derived from the stripped coating material is dissolved is converted into the reclaimed stripping solution by ozone treatment.
請求項 1〜4のいずれか一項記載の基体の製造方法。  The manufacturing method of the base | substrate as described in any one of Claims 1-4.
[6] 前記基体は平面表示パネルである、 [6] The base is a flat display panel.
請求項 1〜5のいずれか一項記載の基体の製造方法。  The method for producing a substrate according to any one of claims 1 to 5.
[7] 前記基体は集積回路基板である、 [7] The base is an integrated circuit board.
請求項 1〜6のいずれか一項記載の基体の製造方法。  The manufacturing method of the base | substrate as described in any one of Claims 1-6.
[8] 前記所定の管理値が 1. 5個/ m2である、 [8] The predetermined control value is 1.5 pieces / m 2 .
請求項 1〜7のいずれか一項記載の基体の製造方法。  The method for producing a substrate according to any one of claims 1 to 7.
PCT/JP2006/313234 2005-07-05 2006-07-03 Method of producing substrate under controlling organic matter concentration in stripping liquor WO2007004612A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007524056A JPWO2007004612A1 (en) 2005-07-05 2006-07-03 Manufacturing method of substrate in which organic substance concentration in stripper is controlled

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005195850 2005-07-05
JP2005-195850 2005-07-05

Publications (1)

Publication Number Publication Date
WO2007004612A1 true WO2007004612A1 (en) 2007-01-11

Family

ID=37604473

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2006/313234 WO2007004612A1 (en) 2005-07-05 2006-07-03 Method of producing substrate under controlling organic matter concentration in stripping liquor

Country Status (4)

Country Link
JP (1) JPWO2007004612A1 (en)
KR (1) KR20080024485A (en)
TW (1) TW200702946A (en)
WO (1) WO2007004612A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4306223A1 (en) * 2021-03-12 2024-01-17 Toray Industries, Inc. Method for separating coating from film with coating, and apparatus for separating coating

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000338684A (en) * 1999-05-26 2000-12-08 Nagase & Co Ltd Substrate surface treating apparatus
JP2003107755A (en) * 2001-06-21 2003-04-09 Chi Mei Optoelectronics Corp Method and device for managing photoresist stripper
JP2003203856A (en) * 2001-10-23 2003-07-18 Ums:Kk Removal method for organic coated film
JP2003305418A (en) * 2002-04-11 2003-10-28 Ums:Kk Apparatus for removing organic coating film on surface of substrate
JP2003330206A (en) * 2001-10-23 2003-11-19 Ums:Kk Method for removing organic coating film, and removing device
JP2004186389A (en) * 2002-12-03 2004-07-02 Yokogawa Electric Corp Liquid chemicals concentration management system
JP2005191030A (en) * 2003-12-24 2005-07-14 Sharp Corp Apparatus and method of removing resist

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000338684A (en) * 1999-05-26 2000-12-08 Nagase & Co Ltd Substrate surface treating apparatus
JP2003107755A (en) * 2001-06-21 2003-04-09 Chi Mei Optoelectronics Corp Method and device for managing photoresist stripper
JP2003203856A (en) * 2001-10-23 2003-07-18 Ums:Kk Removal method for organic coated film
JP2003330206A (en) * 2001-10-23 2003-11-19 Ums:Kk Method for removing organic coating film, and removing device
JP2003305418A (en) * 2002-04-11 2003-10-28 Ums:Kk Apparatus for removing organic coating film on surface of substrate
JP2004186389A (en) * 2002-12-03 2004-07-02 Yokogawa Electric Corp Liquid chemicals concentration management system
JP2005191030A (en) * 2003-12-24 2005-07-14 Sharp Corp Apparatus and method of removing resist

Also Published As

Publication number Publication date
TW200702946A (en) 2007-01-16
KR20080024485A (en) 2008-03-18
JPWO2007004612A1 (en) 2009-01-29

Similar Documents

Publication Publication Date Title
KR20030024727A (en) Method for removing photoresist film
CN109530374B (en) Wafer box cleaning method
TW201308031A (en) Photoresist stripping solution, stripping solution recycling system and operating method, and method for recycling stripping solution
CN103336412A (en) Novel photoresist stripper and application technology thereof
KR20050100605A (en) Substrate treatment system, substrate treatment device, program, and recording medium
CN101154558A (en) Method for cleaning etching equipment component
JP2016162963A (en) Measuring method and measuring apparatus of concentration of metal ion in liquid and cleaning system of electronic device
EP2975461B1 (en) Concentrating method for platemaking waste fluid and recycling method
WO2007004612A1 (en) Method of producing substrate under controlling organic matter concentration in stripping liquor
JP2003005387A (en) Apparatus and method for managing aqueous resist release solution
JP2005240108A5 (en)
JP3126690B2 (en) Resist stripper management system
JP3751435B2 (en) Resist regeneration system and resist regeneration method
CN101312111A (en) Wafer cleaning and recovery method
KR960007446B1 (en) Resist-peeling liquid and the process for peeling a resist using the same
JPH08203804A (en) Manufacture of flat panel display apparatus
JP4114395B2 (en) Device for removing organic coating on substrate surface
JP3914721B2 (en) Non-aqueous resist stripping solution management apparatus and non-aqueous resist stripping solution management method
JP2018045253A (en) Glass regeneration production method, regenerated glass substrate and photomask blanks and photomask using the same
KR101127052B1 (en) Recycling method of the terminated Positive Stripper comprising multi-stage filtration process and thereof using the filtering utilities
KR101071343B1 (en) An Apparatus for Processing Waste Requid and Method Thereof
JP2005000894A (en) Filter management apparatus, filter management method and apparatus for treating substrate
CN118039459A (en) Method for processing abnormal state of wafer reclaimed water ripple surface
JP2017216404A (en) Substrate liquid-processing device, substrate liquid-processing method and storage medium
JPH08243537A (en) Method of controlling water and waste water in surface treatment plant and device therefor

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 2007524056

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 1020077030432

Country of ref document: KR

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 06780738

Country of ref document: EP

Kind code of ref document: A1