CN109530374B - Wafer box cleaning method - Google Patents
Wafer box cleaning method Download PDFInfo
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- CN109530374B CN109530374B CN201811392601.6A CN201811392601A CN109530374B CN 109530374 B CN109530374 B CN 109530374B CN 201811392601 A CN201811392601 A CN 201811392601A CN 109530374 B CN109530374 B CN 109530374B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B9/00—Cleaning hollow articles by methods or apparatus specially adapted thereto
- B08B9/08—Cleaning containers, e.g. tanks
- B08B9/46—Inspecting cleaned containers for cleanliness
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B9/00—Cleaning hollow articles by methods or apparatus specially adapted thereto
- B08B9/08—Cleaning containers, e.g. tanks
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- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention provides a wafer box cleaning method, which comprises the following steps: (1) coating an ethanol solution on the surface of the wafer box, and then opening the wafer box and soaking the wafer box in an active agent; (2) soaking the wafer box soaked in the step (1) by using hydrofluoric acid; (3) soaking the wafer box soaked in the step (2) by using industrial cleaning liquid; (4) soaking the wafer box soaked in the step (3) by using an active agent again; (5) loading the wafer box soaked in the step (4) on a cleaning device for cleaning and drying to obtain a clean wafer box; the cleaning method provided by the invention ensures that the surface of the wafer box after cleaning does not have any contamination, after transportation test, the increase value of particles with the particle size larger than 0.1 mu m measured on the surface of each wafer is less than 5, and simultaneously, the metal content on the surface of each wafer is less than 1E10atoms/cm2The cleaning effect is obvious and the cleaning effect is excellent.
Description
Technical Field
The invention belongs to the field of semiconductors, relates to a wafer box cleaning method, and particularly relates to a wafer box cleaning method for loading IC (integrated circuit) level wafers.
Background
With the continuous update of global electronic equipment, the global chip demand is continuously increased, the chip price is too expensive, a chip factory can use a large number of false wafers in the formal production process to ensure the stability of the process and the equipment, the definition of the false wafers is a silicon wafer which can be recycled repeatedly, and meanwhile, the cleanliness grade is a silicon wafer which has the consistent requirement with the product wafers, so that the wafer box for loading the false wafers also has extremely high cleanliness grade requirement.
After the fake accompanying wafer is used for many times in a chip factory, the fake accompanying wafer is loaded by using a wafer box and is sent to a return polishing factory for recycling and reprocessing, the requirement on the particle and metal grade is extremely high after the fake accompanying wafer is processed, the return polishing factory can use a brand-new wafer box to package the silicon wafer and then deliver the silicon wafer, the wafer boxes occupy a large cost of the return polishing factory, and contaminated wafer boxes can only be treated by plastic garbage because the contaminated wafer boxes cannot be treated, so that the environment is greatly polluted, and the cost control of the return polishing factory is not facilitated. If such contaminated cassettes could be utilized, it would be desirable to reduce environmental contamination and cost of return to the fab.
The wafer box has the advantages that after the wafer box is generally taken out from a chip factory, information labels of silicon wafers are remained on the surface of the wafer box, various metal film residues and some broken silicon wafer powder which fall off after the chip factory performs processes on the wafers are remained in the wafer box, so that great challenge is brought to subsequent treatment, and the cleaned wafer box has to reach the same clean level as a brand-new wafer box.
CN108389781A discloses a method for cleaning and recovering a wafer cassette or a chuck, comprising the following steps: inspecting the wafer box or the clamping plug by using a light source, tearing off a label on the wafer box or the clamping plug, and disassembling the wafer box or the clamping plug for later use; putting the wafer box or the clamping plug which is used for disassembly and is placed into a first ultrasonic groove for ultrasonic cleaning for 3-5 min, wherein a mixed solution formed by ammonia water and deionized water is placed in the first ultrasonic groove, and the volume ratio of the ammonia water to the deionized water is 1: 30-60; then taking out the wafer box or the clamping plug and putting the wafer box or the clamping plug into an overflow groove, and performing overflow treatment for 1-3 min by using deionized water; taking out the wafer box or the clamping plug, putting the wafer box or the clamping plug into a second ultrasonic groove, and carrying out ultrasonic cleaning for 3-5 min, wherein the second ultrasonic groove contains a mixed solution of alcohol and deionized water, and the volume ratio of the alcohol to the deionized water is 1: 10-30; then taking out the wafer box or the clamping plug and putting the wafer box or the clamping plug into an overflow groove, and performing overflow treatment for 1-3 min by using deionized water; and taking out the wafer box or the clamping plug, airing, checking by using a light source in a darkroom, and picking out the qualified wafer box or the clamping plug. The method can only simply treat obvious contamination in the clamping groove of the wafer box, cannot remove microscopic particles, cannot remove metal residues and organic matters in the wafer box, and the wafer box cleaned by the method can only be circulated in a factory and cannot reach the clean level of shipment.
CN102658270A discloses a wafer cassette cleaning device and a method for cleaning by using the same. The slit of the wafer box is cleaned through the brush head on the brush, so that particles attached in the slit leave the inner surface of the slit, and the slit of the wafer box cleaned through the brush head is easy to clean again by using deionized water. The method can generate a large amount of particles attached to the surface of the wafer box, the particles cannot be observed by naked eyes, and the wafer can be polluted after the clean wafer is loaded.
CN103170469A discloses a device for cleaning and drying wafer boxes, including cleaning chamber, support for supporting a plurality of wafer boxes, cleaning liquid spray pipe, liquid discharge pipeline and exhaust pipeline of external cleaning liquid source, the liquid discharge pipeline reaches the exhaust pipeline connect respectively in the bottom of cleaning chamber, support and cleaning liquid spray pipe are located the cleaning chamber, a device for cleaning and drying wafer boxes still includes the dry gas spray pipe of external dry gas source, the dry gas spray pipe is located the cleaning chamber. A method for cleaning and drying a wafer cassette is also disclosed. Except that the cleaning liquid spray pipe externally connected with a cleaning liquid source is arranged in the cleaning cavity, the drying gas spray pipe externally connected with a drying gas source is also arranged, the drying gas can be used for driving ultrapure water vapor in the cleaning cavity away, and absorbing all condensed water condensed in the wafer box, so that the wafer box is comprehensively and fully dried. The method only can remove some large stains on the surface by water vapor flushing, and metal residues, organic matter small particles and the like cannot be flushed.
The cleaning methods all have the defects that the wafer box cannot be thoroughly cleaned, and the cleanness grade of the transportation process cannot be ensured. Therefore, how to develop a wafer cassette cleaning method with remarkable cleaning effect and excellent cleaning effect has important significance for recycling of the wafer cassette.
Disclosure of Invention
Aiming at the defects of the prior art, the invention aims to provide a wafer box cleaning method, so that the wafer box cleaning effect is obvious and excellent, the cleanliness in the transportation process is ensured, and the reuse of the wafer box is realized.
In order to achieve the purpose, the invention adopts the following technical scheme:
the invention provides a wafer box cleaning method, which comprises the following steps:
(1) coating an ethanol solution on the surface of the wafer box, and then opening the wafer box and soaking the wafer box in an active agent;
(2) soaking the wafer box soaked in the step (1) by using hydrofluoric acid;
(3) soaking the wafer box soaked in the step (2) by using industrial cleaning liquid;
(4) soaking the wafer box soaked in the step (3) by using an active agent again;
(5) and (4) loading the wafer box soaked in the step (4) on a cleaning device for cleaning and drying to obtain a clean wafer box.
The wafer box cleaning method provided by the invention has the advantages that through the combined use of specific cleaning reagents and specific cleaning steps, the surface of the cleaned wafer box is free from any contamination, wafers which are loaded cleanly inside the wafer box are packaged and then transported for 24 hours, the increase value of particles with the particle size larger than 0.1 mu m measured on the surface of each wafer is less than 5, and the content of metal sodium, magnesium, aluminum, potassium, calcium, chromium, manganese, iron, cobalt, nickel, copper, zinc and the like on the surface of each wafer is less than 1E10atoms/cm2The wafer box cleaning device has the advantages of remarkable cleaning effect and excellent cleaning effect, can be used for recycling the wafer box, and reduces environmental pollution and related cost.
Preferably, the ethanol solution in step (1) has a mass fraction of 95% to 99.5%, for example, 95%, 95.5%, 96%, 96.5%, 96.8%, 97%, 97.3%, 98%, 98.4%, 98.9%, 99%, 99.1%, 99.5%, etc.
In the invention, the mass fraction of the ethanol solution is at least more than 95%, so that residual glue on the wafer box can be better removed.
Preferably, the coating time is 1-2 min, for example, 1min, 1.1min, 1.2min, 1.3min, 1.4min, 1.5min, 1.6min, 1.7min, 1.8min, 1.9min or 2 min.
Preferably, step (1) further comprises wiping the wafer box with a dust-free cloth before soaking the active agent. The residual glue and the like can be removed primarily by wiping with dust-free cloth.
Preferably, the active agent in step (1) is a NCW-1002 cleaning agent.
Preferably, the NCW-1002 cleaning agent is a mixture of polyoxyethylene alkyl ether and water.
The polyoxyethylene alkyl ether has the formula RO (CH)2CH2O)l(CH(CH3)CH2O)m(CH2CH2O)nH, wherein R is C12H25/C14H29(7/3)，l+n＝14，0<l<14, m is 1.5. R represents a group which are grouped together.
The polyoxyethylene alkyl ether is preferably present in an amount of 5 to 15% by mass, for example, 5%, 6%, 7%, 8%, 9%, 10%, 11%, 12%, 13%, 14%, 15% or the like, in the NCW-1002 cleansing agent.
Preferably, the temperature of the soaking in the step (1) is 40 to 60 ℃, for example, 40 ℃, 42 ℃, 45 ℃, 50 ℃, 53 ℃, 55 ℃, 58 ℃ or 60 ℃ and the like.
In the invention, after groping on actual cleaning conditions, the best cleaning effect can be achieved when the NCW-1002 cleaning agent is cleaned at a temperature of between 40 and 60 ℃ while the mass fraction of the polyoxyethylene alkyl ether in the NCW-1002 cleaning agent is controlled within a range of between 5 and 15 percent.
Preferably, the soaking time in the step (1) is 5-10 min, for example, 5min, 6min, 7min, 8min, 9min or 10 min.
Preferably, the mass fraction of the hydrofluoric acid in the step (2) is 1% to 5%, and may be, for example, 1%, 2%, 3%, 4%, 5%, or the like.
In the invention, the hydrofluoric acid with proper concentration can remove the oxide on the surface of the wafer box.
Preferably, the soaking time in the step (2) is 5-10 min, for example, 5min, 6min, 7min, 8min, 9min or 10 min.
Preferably, the industrial cleaning agent in the step (3) is a mixed solution composed of hydrochloric acid, hydrogen peroxide and water.
Preferably, the mass fraction of the hydrochloric acid is 5% to 10%, and may be, for example, 5%, 6%, 7%, 8%, 9%, 10%, or the like.
The hydrogen peroxide is preferably 5 to 10% by mass, and may be, for example, 5%, 6%, 7%, 8%, 9%, 10%, or the like.
Preferably, the soaking time in step (3) is 4-10 min, for example, 4min, 5min, 6min, 7min, 8min, 9min or 10 min.
In the industrial cleaning agent, the concentrations of hydrochloric acid and hydrogen peroxide are controlled within a proper range, if the concentrations are too high, a wafer box can be damaged, and if the concentrations are too low, the metal removing effect is not achieved. The hydrochloric acid reacts with the metal residues, and the hydrogen peroxide oxidizes and strips the reactants.
Preferably, the active agent in step (4) is the same as the active agent in step (1).
Preferably, the soaking time in the step (4) is 5-10 min, for example, 5min, 6min, 7min, 8min, 9min or 10 min.
Preferably, the step (4) comprises ultrasonic cleaning while soaking with the active agent.
Preferably, the frequency of the ultrasound is 28-40 kHz, such as 28kHz, 29kHz, 30kHz, 31kHz, 32kHz, 33kHz, 34kHz, 35kHz, 36kHz, 37kHz, 38kHz, 39kHz or 40 kHz.
Preferably, the time of the ultrasound is 5-10 min, for example, 5min, 6min, 7min, 8min, 9min or 10 min.
In the invention, the NCW-1002 can combine with surface particle impurities and can be peeled off from the surface of the wafer box, the surface particle impurities can be cleaned more thoroughly through two times of cleaning, and the impurities with the particle size of more than 1 micron can be better removed by matching with ultrasonic cleaning.
Preferably, the washing in step (5) is rinsing with water.
In the present invention, deionized water is generally selected for water.
As a preferred technical scheme, the wafer box cleaning method provided by the invention comprises the following steps:
(1) tearing off residual label information on the surface of the wafer box, coating an ethanol solution with the mass fraction of 95% -99.5% on the surface of the wafer box, wiping the wafer box by using dust-free cloth after 1-2 min, opening the wafer box, and soaking the wafer box in an NCW-1002 cleaning agent with the temperature of 40-60 ℃ and the mass fraction of polyoxyethylene alkyl ether of 5% -15% for 5-10 min;
(2) soaking the wafer box soaked in the step (1) in hydrofluoric acid with the mass fraction of 1% -5% for 5-10 min;
(3) soaking the wafer box soaked in the step (2) for 4-10 min by using a mixed solution consisting of 5-10% by mass of hydrochloric acid, 5-10% by mass of hydrogen peroxide and water;
(4) soaking the wafer box soaked in the step (3) for 5-10 min by using an NCW-1002 cleaning agent with the mass fraction of 5-15% of polyoxyethylene alkyl ether again, and simultaneously cleaning for 5-10 min by matching with ultrasonic with the use frequency of 28-40 kHz;
(5) and (5) finally loading the wafer box soaked in the step (4) on a cleaning device, and washing and drying the wafer box by using water to obtain a clean wafer box.
According to the cleaning method provided by the invention, the cleaning sequence is specific, and if a certain step is lacked or the cleaning sequence is changed, the cleaning effect is reduced. Furthermore, it must be ensured that the remaining small particles with a surface of less than 1 μm are removed by the final application of high pressure water in combination with heating, thereby ensuring a clean cleaning.
Compared with the prior art, the invention has the following beneficial effects:
the wafer box cleaning method provided by the invention has the advantages that through the combined use of specific cleaning reagents and specific cleaning steps, the surface of the cleaned wafer box is free from any contamination, wafers which are loaded cleanly inside the wafer box are packaged and then transported for 24 hours, the increase value of particles with the particle size larger than 0.1 mu m measured on the surface of each wafer is less than 5, and the content of metal sodium, magnesium, aluminum, potassium, calcium, chromium, manganese, iron, cobalt, nickel, copper, zinc and the like on the surface of each wafer is less than 1E10atoms/cm2The wafer box cleaning agent has the advantages of remarkable cleaning effect, excellent cleaning effect, capability of recycling the wafer box, reduction of environmental pollution and related cost, and great significance and value for the utilization of the wafer box.
Drawings
FIG. 1 is a graph showing the variation of the added value of particles on the surface of a wafer in example 1.
FIG. 2 is a graph showing the measurement of the metal content on the wafer surface in example 1.
FIG. 3 is a graph showing the variation of the added value of particles on the surface of the wafer in example 2.
FIG. 4 is a graph showing the measurement of the metal content on the wafer surface in example 2.
FIG. 5 is a graph showing the variation of the added value of particles on the surface of the wafer in example 3.
FIG. 6 is a graph showing the measurement of the metal content on the wafer surface in example 3.
FIG. 7 is a graph showing the variation of the added value of particles on the surface of the wafer in example 4.
FIG. 8 is a graph showing the measurement of the metal content on the wafer surface in example 4.
FIG. 9 is a graph showing the variation of the added value of particles on the surface of the wafer in example 5.
FIG. 10 is a graph showing the measurement of the metal content on the wafer surface in example 5.
FIG. 11 is a graph showing the variation of the added value of particles on the surface of the wafer in example 6.
FIG. 12 is a graph showing the measurement of the metal content on the wafer surface in example 6.
FIG. 13 is a graph showing the variation of the added value of particles on the surface of the wafer in example 7.
FIG. 14 is a graph showing the measurement of the metal content on the wafer surface in example 7.
FIG. 15 is a graph showing the variation of the added value of particles on the surface of the wafer in example 8.
FIG. 16 is a graph showing the measurement of the metal content on the wafer surface in example 8.
FIG. 17 is a graph showing the variation of the added value of particles on the surface of the wafer in example 9.
FIG. 18 is a graph showing the measurement of the metal content on the wafer surface in example 9.
FIG. 19 is a graph showing the variation of the added value of particles on the surface of the wafer in example 10.
FIG. 20 is a graph showing the measurement of the metal content on the wafer surface in example 10.
FIG. 21 is a graph showing the variation of the added value of particles on the surface of the wafer in example 11.
FIG. 22 is a graph showing the measurement of the metal content on the wafer surface in example 11.
FIG. 23 is a graph showing the variation of the added value of particles on the surface of the wafer in example 12.
FIG. 24 is a graph showing the measurement of the metal content on the wafer surface in example 12.
FIG. 25 is a graph showing the change in the added value of particles on the surface of the wafer in comparative example 1.
Fig. 26 is a test chart of the wafer surface metal content value in comparative example 1.
FIG. 27 is a graph showing the change in the added value of particles on the wafer surface in comparative example 2.
Fig. 28 is a test chart of the wafer surface metal content value in comparative example 2.
FIG. 29 is a graph showing the change in the added value of particles on the wafer surface in comparative example 3.
Fig. 30 is a test chart of the wafer surface metal content value in comparative example 3.
FIG. 31 is a graph showing the change in the added value of particles on the wafer surface in comparative example 4.
Fig. 32 is a test chart of the wafer surface metal content value in comparative example 4.
FIG. 33 is a graph showing the change in the added value of particles on the wafer surface in comparative example 5.
Fig. 34 is a test chart of the wafer surface metal content value in comparative example 5.
FIG. 35 is a graph showing the change in the added value of particles on the wafer surface in comparative example 6.
Fig. 36 is a test chart of the wafer surface metal content value in comparative example 6.
FIG. 37 is a graph showing the change in the added value of particles on the wafer surface in comparative example 7.
FIG. 38 is a test chart of the metal content value on the wafer surface in comparative example 7.
In the drawings of the invention, the added value of the particles on the surface of the wafer refers to: a particle increment of greater than 0.1 μm, the unit of ordinate in the increment variation plot being "counts"; the unit of the metal content data is E10atoms/cm2”。
Detailed Description
The technical solution of the present invention is further explained by the following embodiments. It should be understood by those skilled in the art that the examples are only for the understanding of the present invention and should not be construed as the specific limitations of the present invention.
The cleaning device comprises 4 cleaning devices in a group, each cleaning device is divided into an upper part and a lower part, the upper part of each cleaning device is fixedly provided with a wafer box cover and a wafer frame, the lower part of each cleaning device is fixedly provided with a wafer box bottom and a sealing ring, all openings of the wafer box components are placed outwards and fixed by a PVDF material module, the cleaning device is fixedly provided with SUS316 stainless steel, the 4 cleaning devices rotate in a group by centrifugal force, and the wafer boxes are cleaned and dried by using ultrapure water with the pressure of more than 6kg and the resistance of more than 18 Mohm-cm.
The wafer box can be a FOUP, a FOSB, a Xinyue A1 wafer box, a Xinyue A3 wafer box, a Xinyue A5 wafer box or a Quite Ultrapak wafer box which are commonly used by a chip factory, and the like.
Example 1
This embodiment cleans the wafer cassette by the following steps:
(1) tearing off residual label information on the surface of the wafer box, coating an ethanol solution with the mass fraction of 95% on the surface of the wafer box, wiping the wafer box by using a dust-free cloth after 2min, opening the wafer box, and soaking the wafer box in an NCW-1002 cleaning agent with the temperature of 60 ℃ and the mass fraction of polyoxyethylene alkyl ether of 5% for 10 min;
(2) soaking the wafer box soaked in the step (1) in hydrofluoric acid with the mass fraction of 5% for 5 min;
(3) soaking the wafer box soaked in the step (2) for 10min by using a mixed solution consisting of hydrochloric acid with the mass fraction of 10%, hydrogen peroxide with the mass fraction of 10% and water;
(4) soaking the wafer box soaked in the step (3) for 5min by using an NCW-1002 cleaning agent with the mass fraction of polyoxyethylene alkyl ether being 15%, and simultaneously cleaning for 5min by matching with ultrasonic with the use frequency of 40 kHz;
(5) and (4) finally, loading the wafer box soaked in the step (4) on a cleaning device, and washing and drying the wafer box by using deionized water to obtain a clean wafer box.
Example 2
This embodiment cleans the wafer cassette by the following steps:
(1) tearing off residual label information on the surface of the wafer box, coating an ethanol solution with the mass fraction of 99.5% on the surface of the wafer box, wiping the wafer box by using a dust-free cloth after 1min, opening the wafer box, and soaking the wafer box in an NCW-1002 cleaning agent with the mass fraction of 5% of polyoxyethylene alkyl ether at 40 ℃ for 5 min;
(2) soaking the wafer box soaked in the step (1) in hydrofluoric acid with the mass fraction of 1% for 10 min;
(3) soaking the wafer box soaked in the step (2) for 4min by using a mixed solution consisting of 5% by mass of hydrochloric acid, 5% by mass of hydrogen peroxide and water;
(4) soaking the wafer box soaked in the step (3) for 10min by using an NCW-1002 cleaning agent with the mass fraction of 5% of polyoxyethylene alkyl ether, and simultaneously cleaning for 10min by matching with ultrasonic with the use frequency of 28 kHz;
(5) and (4) finally, loading the wafer box soaked in the step (4) on a cleaning device, and washing and drying the wafer box by using deionized water to obtain a clean wafer box.
Example 3
This embodiment cleans the wafer cassette by the following steps:
(1) tearing off residual label information on the surface of the wafer box, coating an ethanol solution with the mass fraction of 97.3% on the surface of the wafer box, wiping the wafer box by using dust-free cloth after 1.5min, opening the wafer box, and soaking the wafer box in an NCW-1002 cleaning agent with the temperature of 50 ℃ and the mass fraction of polyoxyethylene alkyl ether of 8% for 8 min;
(2) immersing the wafer box immersed in the step (1) in hydrofluoric acid with the mass fraction of 4% for 7 min;
(3) soaking the wafer box soaked in the step (2) for 9min by using a mixed solution consisting of 8% by mass of hydrochloric acid, 9% by mass of hydrogen peroxide and water;
(4) soaking the wafer box soaked in the step (3) for 6min by using a NCW-1002 cleaning agent with the mass fraction of 11% of polyoxyethylene alkyl ether, and simultaneously cleaning for 7min by matching with ultrasonic with the use frequency of 30 kHz;
(5) and (5) finally loading the wafer box soaked in the step (4) on a cleaning device, and washing and drying the wafer box by using water to obtain a clean wafer box.
Example 4
This embodiment cleans the wafer cassette by the following steps:
the present embodiment is different from embodiment 1 only in that the step of wiping the wafer cassette with dust-free cloth is not included in step (1) of the present embodiment. The rest is the same as in example 1.
Example 5
This embodiment cleans the wafer cassette by the following steps:
the present embodiment is different from embodiment 1 only in that the step (4) of the present embodiment does not include a step of using ultrasonic cleaning in combination. The rest is the same as in example 1.
Example 6
This embodiment cleans the wafer cassette by the following steps:
this example is different from example 1 only in that an NCW-1002 cleaning agent having a polyoxyethylene alkyl ether mass fraction of 2% is used in step (1) of this example. The rest is the same as in example 1.
Example 7
This embodiment cleans the wafer cassette by the following steps:
this example differs from example 1 only in that in step (1) of this example, an NCW-1002 cleaning agent having a polyoxyethylene alkyl ether mass fraction of 19% was used. The rest is the same as in example 1.
Example 8
This embodiment cleans the wafer cassette by the following steps:
this example differs from example 1 only in that the temperature of the immersion in step (1) of this example was 30 ℃. The rest is the same as in example 1.
Example 9
This embodiment cleans the wafer cassette by the following steps:
this example differs from example 1 only in that the temperature of the immersion in step (1) of this example was 70 ℃. The rest is the same as in example 1.
Example 10
This embodiment cleans the wafer cassette by the following steps:
the present example is different from example 1 only in that hydrochloric acid is used in the present example at a mass fraction of 15% in step (3). The rest is the same as in example 1.
Example 11
This embodiment cleans the wafer cassette by the following steps:
the present example is different from example 1 only in that hydrochloric acid of 2% by mass is used in step (3) of the present example. The rest is the same as in example 1.
Example 12
This embodiment cleans the wafer cassette by the following steps:
the present example is different from example 1 only in that hydrogen peroxide with a mass fraction of 14% is used in step (3) of the present example. The rest is the same as in example 1.
Comparative example 1
This comparative example cleaned the wafer cassette by the following steps:
this comparative example differs from example 1 only in that it does not include step (2), and the rest is the same as example 1.
Comparative example 2
This comparative example cleaned the wafer cassette by the following steps:
this comparative example differs from example 1 only in that it does not include step (3), and the rest is the same as example 1.
Comparative example 3
This comparative example cleaned the wafer cassette by the following steps:
this comparative example differs from example 1 only in that it does not include step (4), and is otherwise the same as example 1.
Comparative example 4
This comparative example cleaned the wafer cassette by the following steps:
this comparative example differs from example 1 only in that it does not include step (5), and is otherwise the same as example 1.
Comparative example 5
This comparative example cleaned the wafer cassette by the following steps:
this comparative example differs from example 1 only in that it does not include step (3) and step (4), and the rest is the same as example 1.
Comparative example 6
This comparative example cleaned the wafer cassette by the following steps:
this comparative example differs from example 1 only in that it first performs the operation of step (5) in example 1 and then performs the operation of step (4) in example 1, and the rest is the same as example 1.
Comparative example 7
This comparative example cleaned the wafer cassette by the following steps:
(1) tearing off residual label information on the surface of the wafer box, coating an ethanol solution with the mass fraction of 95% on the surface of the wafer box, wiping the wafer box by using a dust-free cloth after 2min, opening the wafer box, and soaking the wafer box in an NCW-1002 cleaning agent with the temperature of 60 ℃ and the mass fraction of polyoxyethylene alkyl ether of 5% for 10 min;
(2) soaking the wafer box soaked in the step (1) for 10min by using a mixed solution consisting of hydrochloric acid with the mass fraction of 10%, hydrogen peroxide with the mass fraction of 10% and water;
(3) soaking the wafer box soaked in the step (2) for 5min by using an NCW-1002 cleaning agent with the mass fraction of polyoxyethylene alkyl ether being 15%, and simultaneously cleaning for 5min by matching with ultrasonic with the use frequency of 40 kHz;
(4) soaking the wafer box soaked in the step (3) in hydrofluoric acid with the mass fraction of 5% for 5 min;
(5) and (4) finally, loading the wafer box soaked in the step (4) on a cleaning device, and washing and drying the wafer box by using deionized water to obtain a clean wafer box.
The wafer cassettes of examples 1-12 and comparative examples 1-7 were subjected to a transportation test to simulate a shipment test, and the increase of particles on the wafer surface was measured by using a particle tester SP1 of KLA-Tencor, USA to determine the cleaning effect, and an ICP-MS tester was used to determine whether the content data of sodium, magnesium, aluminum, potassium, calcium, chromium, manganese, iron, cobalt, nickel, copper, zinc, etc. on the wafer surface was less than 1E10atoms/cm2The specific results are shown in fig. 1-38, and the results show that:
examples 1-3 after cleaning according to the method provided by the present invention, both the particle and metal data on the surface of the test wafer meet the acceptance criteria; examples 4-5 the particle effect on the surface of the test wafer was reduced after changing the base conditions; examples 6-12 the cleaning effect was reduced by testing the wafer surface for particles and metals after changing the cleaning recipe.
It was found by comparative examples 1-5 that the particles and metals on the surface of the test wafer failed to meet the acceptance criteria when carried out in the absence of any one step; it was found by comparative examples 6-7 that the particles and metals on the surface of the test wafers did not meet the acceptance criteria after changing the sequence of the present invention.
The applicant states that the present invention is described in the above embodiments to describe the wafer cassette cleaning method of the present invention, but the present invention is not limited to the above detailed method, i.e., it does not mean that the present invention must be implemented by the above detailed method. It should be understood by those skilled in the art that any modification of the present invention, equivalent substitutions of the raw materials of the product of the present invention, addition of auxiliary components, selection of specific modes, etc., are within the scope and disclosure of the present invention.
Claims (18)
1. A wafer box cleaning method is characterized by comprising the following steps:
(1) coating an ethanol solution on the surface of a wafer box, then opening the wafer box, and soaking the wafer box in an active agent, wherein the active agent is NCW-1002 cleaning agent, the NCW-1002 cleaning agent is a mixture of polyoxyethylene alkyl ether and water, and the chemical formula of the polyoxyethylene alkyl ether is RO (CH)2CH2O)l(CH(CH3)CH2O)m(CH2CH2O)nH, wherein R is C12H25/C14H29(7/3)，l+n＝14，0<l<14，m＝1.5；
(2) Soaking the wafer box soaked in the step (1) by using hydrofluoric acid;
(3) soaking the wafer box soaked in the step (2) by using an industrial cleaning solution, wherein the industrial cleaning solution is a mixed solution composed of hydrochloric acid, hydrogen peroxide and water, and the mass fraction of the hydrochloric acid is 5-10%;
(4) soaking the wafer box soaked in the step (3) by using an active agent again;
(5) and (4) loading the wafer box soaked in the step (4) on a cleaning device for cleaning and drying to obtain a clean wafer box.
2. The wafer cassette cleaning method according to claim 1, wherein the mass fraction of the ethanol solution in the step (1) is 95% to 99.5%.
3. The wafer cassette cleaning method according to claim 1, wherein the coating time in step (1) is 1-2 min.
4. The wafer cassette cleaning method according to claim 1, further comprising wiping the wafer cassette with a dust-free cloth before the soaking with the active agent in step (1).
5. The wafer cassette cleaning method according to claim 1, wherein the mass fraction of the polyoxyethylene alkyl ether in the NCW-1002 cleaning agent in the step (1) is 5% to 15%.
6. The wafer cassette cleaning method according to claim 1, wherein the temperature of the soaking in the step (1) is 40 to 60 ℃.
7. The wafer cassette cleaning method according to claim 1, wherein the soaking time in the step (1) is 5-10 min.
8. The wafer cassette cleaning method according to claim 1, wherein the mass fraction of the hydrofluoric acid in the step (2) is 1% to 5%.
9. The wafer cassette cleaning method according to claim 1, wherein the soaking time in the step (2) is 5-10 min.
10. The wafer cassette cleaning method according to claim 1, wherein the hydrogen peroxide in the step (3) is 5 to 10 mass percent.
11. The wafer cassette cleaning method according to claim 1, wherein the soaking time in the step (3) is 4-10 min.
12. The wafer cassette cleaning method according to claim 1, wherein the active agent in step (4) is the same as the active agent in step (1).
13. The wafer cassette cleaning method according to claim 1, wherein the soaking time in the step (4) is 5-10 min.
14. The wafer cassette cleaning method according to claim 1, wherein the step (4) further comprises ultrasonic cleaning while soaking with an active agent.
15. The wafer cassette cleaning method according to claim 14, wherein the frequency of the ultrasonic wave is 28 to 40 kHz.
16. The wafer cassette cleaning method according to claim 14, wherein the ultrasonic treatment is performed for 5 to 10 min.
17. The wafer cassette cleaning method according to claim 1, wherein the cleaning in step (5) is rinsing with water.
18. The wafer cassette cleaning method according to claim 1, comprising the steps of:
(1) tearing off residual label information on the surface of the wafer box, coating an ethanol solution with the mass fraction of 95% -99.5% on the surface of the wafer box, wiping the wafer box by using dust-free cloth after 1-2 min, opening the wafer box, and soaking the wafer box in an NCW-1002 cleaning agent with the temperature of 40-60 ℃ and the mass fraction of polyoxyethylene alkyl ether of 5% -15% for 5-10 min;
(2) soaking the wafer box soaked in the step (1) in hydrofluoric acid with the mass fraction of 1% -5% for 5-10 min;
(3) soaking the wafer box soaked in the step (2) for 4-10 min by using a mixed solution consisting of 5-10% by mass of hydrochloric acid, 5-10% by mass of hydrogen peroxide and water;
(4) soaking the wafer box soaked in the step (3) for 5-10 min by using an NCW-1002 cleaning agent with the mass fraction of 5-15% of polyoxyethylene alkyl ether again, and simultaneously cleaning for 5-10 min by matching with ultrasonic with the use frequency of 28-40 kHz;
(5) and (5) finally loading the wafer box soaked in the step (4) on a cleaning device, and washing and drying the wafer box by using water to obtain a clean wafer box.
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| CN111842380B (en) * | 2020-06-22 | 2021-07-30 | 徐州鑫晶半导体科技有限公司 | Wafer cassette cleaning apparatus and control method of wafer cassette cleaning apparatus |
| TWI762311B (en) * | 2021-05-13 | 2022-04-21 | 科嶠工業股份有限公司 | Method and device for detecting cleaning results of material transfer box |
| CN117133691B (en) * | 2023-10-25 | 2024-01-23 | 江苏芯梦半导体设备有限公司 | Environment detection method, detection device and cleaning equipment for wafer box after cleaning |
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