WO2006113222A3 - Elimination de photoresine a implantation ionique haute dose au moyen de monocouches auto-assemblees dans des systemes de solvants - Google Patents

Elimination de photoresine a implantation ionique haute dose au moyen de monocouches auto-assemblees dans des systemes de solvants Download PDF

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Publication number
WO2006113222A3
WO2006113222A3 PCT/US2006/013430 US2006013430W WO2006113222A3 WO 2006113222 A3 WO2006113222 A3 WO 2006113222A3 US 2006013430 W US2006013430 W US 2006013430W WO 2006113222 A3 WO2006113222 A3 WO 2006113222A3
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WO
WIPO (PCT)
Prior art keywords
self
removal
sam
solvent systems
assembled monolayers
Prior art date
Application number
PCT/US2006/013430
Other languages
English (en)
Other versions
WO2006113222A2 (fr
Inventor
Michael B Korzenski
Pamela M Visintin
Thomas H Baum
Original Assignee
Advanced Tech Materials
Michael B Korzenski
Pamela M Visintin
Thomas H Baum
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Tech Materials, Michael B Korzenski, Pamela M Visintin, Thomas H Baum filed Critical Advanced Tech Materials
Priority to CN2006800216226A priority Critical patent/CN101198683B/zh
Priority to EP06749725A priority patent/EP1877530A4/fr
Priority to JP2008506595A priority patent/JP2008538013A/ja
Priority to US11/552,808 priority patent/US20070251551A1/en
Publication of WO2006113222A2 publication Critical patent/WO2006113222A2/fr
Publication of WO2006113222A3 publication Critical patent/WO2006113222A3/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/162—Organic compounds containing Si
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/28—Heterocyclic compounds containing nitrogen in the ring
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/30—Amines; Substituted amines ; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/43—Solvents
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nanotechnology (AREA)
  • Computer Hardware Design (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Composite Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

L'invention concerne un procédé et des compositions contenant des monocouches auto-assemblées (SAM) servant à éliminer un matériau photorésine en vrac et durcie de dispositifs micro-électroniques. Les compositions selon l'invention contiennent au moins un solvant, au moins un catalyseur, au moins un composant SAM et facultativement un tensioactif. Ces compositions permettent d'éliminer efficacement le matériau photorésine durcie tout en passivant simultanément la/les couche(s) sous-jacente(s) contenant du silicium au cours d'un processus en une seule étape.
PCT/US2006/013430 2005-04-15 2006-04-10 Elimination de photoresine a implantation ionique haute dose au moyen de monocouches auto-assemblees dans des systemes de solvants WO2006113222A2 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN2006800216226A CN101198683B (zh) 2005-04-15 2006-04-10 使用溶剂体系内的自组装单层除去高剂量离子注入光致抗蚀剂
EP06749725A EP1877530A4 (fr) 2005-04-15 2006-04-10 Elimination de photoresine a implantation ionique haute dose au moyen de monocouches auto-assemblees dans des systemes de solvants
JP2008506595A JP2008538013A (ja) 2005-04-15 2006-04-10 溶媒系中の自己組織化単分子膜を用いた高線量イオン注入フォトレジストの除去
US11/552,808 US20070251551A1 (en) 2005-04-15 2006-10-25 Removal of high-dose ion-implanted photoresist using self-assembled monolayers in solvent systems

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US67185105P 2005-04-15 2005-04-15
US60/671,851 2005-04-15

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US11/552,808 Continuation-In-Part US20070251551A1 (en) 2005-04-15 2006-10-25 Removal of high-dose ion-implanted photoresist using self-assembled monolayers in solvent systems

Publications (2)

Publication Number Publication Date
WO2006113222A2 WO2006113222A2 (fr) 2006-10-26
WO2006113222A3 true WO2006113222A3 (fr) 2007-11-08

Family

ID=37115663

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/013430 WO2006113222A2 (fr) 2005-04-15 2006-04-10 Elimination de photoresine a implantation ionique haute dose au moyen de monocouches auto-assemblees dans des systemes de solvants

Country Status (7)

Country Link
EP (1) EP1877530A4 (fr)
JP (1) JP2008538013A (fr)
KR (1) KR20070121845A (fr)
CN (1) CN101198683B (fr)
SG (1) SG161280A1 (fr)
TW (1) TW200700916A (fr)
WO (1) WO2006113222A2 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007111694A2 (fr) 2005-11-09 2007-10-04 Advanced Technology Materials, Inc. Composition et procédé de recyclage de plaquettes semiconductrices sur lesquelles se trouvent des matières diélectriques à faible constante diélectrique
JP2011520142A (ja) * 2008-05-01 2011-07-14 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 高密度注入レジストの除去のための低ｐＨ混合物
GB0819274D0 (en) * 2008-10-21 2008-11-26 Plastic Logic Ltd Method and apparatus for the formation of an electronic device
KR101579846B1 (ko) * 2008-12-24 2015-12-24 주식회사 이엔에프테크놀로지 포토레지스트 패턴 제거용 조성물 및 이를 이용한 금속 패턴의 형성 방법
SG10201404328QA (en) * 2009-07-30 2014-10-30 Basf Se Post ion implant stripper for advanced semiconductor application
SG10201505535VA (en) 2010-07-16 2015-09-29 Entegris Inc Aqueous cleaner for the removal of post-etch residues
WO2013101907A1 (fr) 2011-12-28 2013-07-04 Advanced Technology Materials, Inc. Compositions et procédés pour l'attaque sélective de nitrure de titane
DE102021101486A1 (de) * 2020-03-30 2021-09-30 Taiwan Semiconductor Manufacturing Co., Ltd. Photoresistschicht-oberflächenbehandlung, abdeckschichtund herstellungsverfahren einer photoresiststruktur

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6107166A (en) * 1997-08-29 2000-08-22 Fsi International, Inc. Vapor phase cleaning of alkali and alkaline earth metals
US20020077259A1 (en) * 2000-10-16 2002-06-20 Skee David C. Stabilized alkaline compositions for cleaning microlelectronic substrates
US6440856B1 (en) * 1999-09-14 2002-08-27 Jsr Corporation Cleaning agent for semiconductor parts and method for cleaning semiconductor parts
US6613157B2 (en) * 2001-02-15 2003-09-02 Micell Technologies, Inc. Methods for removing particles from microelectronic structures
US6699829B2 (en) * 2002-06-07 2004-03-02 Kyzen Corporation Cleaning compositions containing dichloroethylene and six carbon alkoxy substituted perfluoro compounds

Family Cites Families (6)

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Publication number Priority date Publication date Assignee Title
US6500605B1 (en) * 1997-05-27 2002-12-31 Tokyo Electron Limited Removal of photoresist and residue from substrate using supercritical carbon dioxide process
JP3410369B2 (ja) * 1998-04-28 2003-05-26 花王株式会社 剥離剤組成物
JP3474127B2 (ja) * 1998-11-13 2003-12-08 花王株式会社 剥離剤組成物
AU2003220039A1 (en) * 2002-03-04 2003-09-22 Supercritical Systems Inc. Method of passivating of low dielectric materials in wafer processing
JP4424998B2 (ja) * 2002-04-12 2010-03-03 東京エレクトロン株式会社 多孔質誘電体膜の洗浄中のダメージを低減する処理方法
TW200710205A (en) * 2005-06-16 2007-03-16 Advanced Tech Materials Dense fluid compositions for removal of hardened photoresist, post-etch residue and/or bottom anti-reflective coating layers

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6107166A (en) * 1997-08-29 2000-08-22 Fsi International, Inc. Vapor phase cleaning of alkali and alkaline earth metals
US6440856B1 (en) * 1999-09-14 2002-08-27 Jsr Corporation Cleaning agent for semiconductor parts and method for cleaning semiconductor parts
US20020077259A1 (en) * 2000-10-16 2002-06-20 Skee David C. Stabilized alkaline compositions for cleaning microlelectronic substrates
US6613157B2 (en) * 2001-02-15 2003-09-02 Micell Technologies, Inc. Methods for removing particles from microelectronic structures
US6699829B2 (en) * 2002-06-07 2004-03-02 Kyzen Corporation Cleaning compositions containing dichloroethylene and six carbon alkoxy substituted perfluoro compounds

Also Published As

Publication number Publication date
SG161280A1 (en) 2010-05-27
CN101198683A (zh) 2008-06-11
TW200700916A (en) 2007-01-01
WO2006113222A2 (fr) 2006-10-26
EP1877530A2 (fr) 2008-01-16
JP2008538013A (ja) 2008-10-02
KR20070121845A (ko) 2007-12-27
CN101198683B (zh) 2011-09-14
EP1877530A4 (fr) 2010-06-09

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