WO2006111185A1 - Procede permettant de connecter deux elements d'un composant optique - Google Patents

Procede permettant de connecter deux elements d'un composant optique Download PDF

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Publication number
WO2006111185A1
WO2006111185A1 PCT/EP2005/004950 EP2005004950W WO2006111185A1 WO 2006111185 A1 WO2006111185 A1 WO 2006111185A1 EP 2005004950 W EP2005004950 W EP 2005004950W WO 2006111185 A1 WO2006111185 A1 WO 2006111185A1
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WO
WIPO (PCT)
Prior art keywords
hydrogen
gas atmosphere
elements
content
fused silica
Prior art date
Application number
PCT/EP2005/004950
Other languages
English (en)
Inventor
Claudia Ekstein
Joachim Hoga
Eric Eva
Hubert Holderer
Original Assignee
Carl Zeiss Smt Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carl Zeiss Smt Ag filed Critical Carl Zeiss Smt Ag
Priority to DE112005003536T priority Critical patent/DE112005003536T5/de
Publication of WO2006111185A1 publication Critical patent/WO2006111185A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B23/00—Re-forming shaped glass
    • C03B23/20—Uniting glass pieces by fusing without substantial reshaping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2201/00—Type of glass produced
    • C03B2201/06—Doped silica-based glasses
    • C03B2201/07—Impurity concentration specified
    • C03B2201/075—Hydroxyl ion (OH)
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2201/00—Type of glass produced
    • C03B2201/06—Doped silica-based glasses
    • C03B2201/08—Doped silica-based glasses doped with boron or fluorine or other refractive index decreasing dopant
    • C03B2201/10—Doped silica-based glasses doped with boron or fluorine or other refractive index decreasing dopant doped with boron
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2201/00—Type of glass produced
    • C03B2201/06—Doped silica-based glasses
    • C03B2201/20—Doped silica-based glasses doped with non-metals other than boron or fluorine
    • C03B2201/21—Doped silica-based glasses doped with non-metals other than boron or fluorine doped with molecular hydrogen
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2201/00—Type of glass produced
    • C03B2201/06—Doped silica-based glasses
    • C03B2201/20—Doped silica-based glasses doped with non-metals other than boron or fluorine
    • C03B2201/23—Doped silica-based glasses doped with non-metals other than boron or fluorine doped with hydroxyl groups
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2201/00—Type of glass produced
    • C03B2201/06—Doped silica-based glasses
    • C03B2201/30—Doped silica-based glasses doped with metals, e.g. Ga, Sn, Sb, Pb or Bi
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2201/00—Type of glass produced
    • C03B2201/06—Doped silica-based glasses
    • C03B2201/30—Doped silica-based glasses doped with metals, e.g. Ga, Sn, Sb, Pb or Bi
    • C03B2201/32—Doped silica-based glasses doped with metals, e.g. Ga, Sn, Sb, Pb or Bi doped with aluminium
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2201/00—Type of glass produced
    • C03B2201/06—Doped silica-based glasses
    • C03B2201/30—Doped silica-based glasses doped with metals, e.g. Ga, Sn, Sb, Pb or Bi
    • C03B2201/50—Doped silica-based glasses doped with metals, e.g. Ga, Sn, Sb, Pb or Bi doped with alkali metals
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2201/00—Type of glass produced
    • C03B2201/06—Doped silica-based glasses
    • C03B2201/30—Doped silica-based glasses doped with metals, e.g. Ga, Sn, Sb, Pb or Bi
    • C03B2201/54—Doped silica-based glasses doped with metals, e.g. Ga, Sn, Sb, Pb or Bi doped with beryllium, magnesium or alkaline earth metals

Definitions

  • the invention relates to a method for connecting two elements, at least one of which consists of fused silica, wherein both elements are connected through fusion bonding in a gas atmosphere, and also an optical component produced in accordance with the method.
  • An optical component is conventionally produced through connecting two fused silica elements at a contact point or joint without additional materials such as e.g. glue, solder or liquids, since glue swelling, glue creeping or irregularly distributed solder can cause deformation and hence imaging faults.
  • the joint should be waterproof and stable over a long time to maintain fitting of the joined parts and prevent changes in the optical performance, i.e. in the imaging properties of the component in the optical path.
  • Wringing is a connection of two optical materials, wherein the joined surfaces are held only by molecular attractive forces. Wringing is a "detachable" connection which can be partially or completely released (under the influence of moisture or wedge effects).
  • connection which was previously wrung at one or more contact points is heated to several 100 0 C in a gas atmosphere in a furnace, in the extreme case up to just below the glass transition temperature of fused silica, thereby forming siloxane and silane compounds, and is subsequently cooled.
  • This connection is far more solid than a mere wrung connection.
  • the solidity generally increases with increasing maximum temperature and dwell time.
  • the fused silica is thereby usually modified such that the optical performance can no longer be guaranteed.
  • the hydrogen contained in the fused silica is outgassed, which reduces the service life of optical components which are produced in accordance with such a method and are used in lithography optics, under irradiation with light of a wavelength range of between approximately 150nm and 250nm, e.g. 193nm.
  • Conventional bonding methods moreover also generate bubbles in the joint which bear the risk of later delaminating.
  • This object is achieved by a method wherein a hydrogen portion in the gas atmosphere is adjusted such that reduction of the hydrogen content of the first and/or second element(s) is substantially prevented, and by an optical component produced according to this method.
  • the inventive method permits connection also of more than two, in particular, of three or four elements.
  • the hydrogen portion of the gas atmosphere is adjusted such that the hydrogen content of the first and/or second element(s) remains substantially constant during the method.
  • the hydrogen portion of the gas atmosphere is selected such that the temperature-dependent diffusing out and doping of hydrogen during the method cancels out when the method is terminated, such that the hydrogen content in the elements remains substantially unchanged.
  • the hydrogen portion of the gas atmosphere is adjusted such that the hydrogen content of the first and/or second element(s) is increased during the method. This is advantageous, in particular, if the hydrogen content of the elements was selected to be smaller during production than is advantageous for their optimum performance and service life. In this case, the optimum hydrogen content is adjusted only during the bonding process of the two elements.
  • the first and/or second element(s) substantially contain(s) no hydrogen before the method is started.
  • the complete hydrogen content of the elements is supplied to the two materials not until after termination of the phases of the connecting process which require a high temperature, which is advantageous, in particular, for materials having a low OH content.
  • a hydrogen content smaller by a factor of 10 compared to a hydrogen content provided for a later application is defined as substantially hydrogen-free hydrogen content.
  • the manufacturer of such materials usually loads the hydrogen in a cold state, i.e. at low temperatures, to reduce formation of silane and siloxane compounds which increases with a low OH content. If a cold-loaded material of this type with a very high initial content would be subjected to the connecting process (referred to as bonding process in the following), part of the hydrogen would diffuse out and a further part of the hydrogen would react into SiH.
  • the initial hydrogen content would have to be that high that 2 x 10 16 molecules/cm 3 are still left in the material after diffusing out. Since the high temperatures usually act on the optical material for several days, that part of the hydrogen which reacts to SiH would, even with this minimum amount of hydrogen due to the small OH content, still be that large that an unacceptable amount of SiH is formed. It is therefore more favourable to load hydrogen only during the bonding process.
  • the hydrogen portion is added to the gas atmosphere during cooling, which is preferred when the temperature has fallen below 500 0 C.
  • Adding the hydrogen portion at relatively low temperatures is advantageous, in particular, for optical materials having a small OH content (see above). Such materials have less compaction and less polarization-inducing birefringence than materials with a higher OH content.
  • these materials generate more silane and siloxane compounds at high temperatures if they are loaded with hydrogen.
  • Silane (SiH) is reversibly split under laser irradiation, wherein the decomposition products show a strong and broad-band absorption around 215 nm. This causes transmission hysteresis and possibly other undesired reactions of the optical materials to laser irradiation. For this reason, the hydrogen is loaded only during cooling i.e. after termination of that part of the bonding process which requires high temperatures, such that formation of silane and siloxane compounds can be reduced.
  • the hydrogen portion of the gas atmosphere is added after cooling.
  • the hydrogen is loaded only at a time when no further heating of the elements to high temperatures is required.
  • the gas atmosphere is under high pressure which facilitates doping of hydrogen into the elements.
  • the furnace in which the bonding process is carried out may preferably be an autoclave, i.e. a pressure container which can be sealed in an air-tight and vapor-tight manner.
  • an inert gas is added to the gas atmosphere.
  • the inert gas being a further component of the gas atmosphere, keeps the materials to be connected free from contamination.
  • the first and second elements are wrung in a previous process step, preferably in a protective gas atmosphere. Through wringing, the elements are connected to each other already at the common contact point which facilitates the subsequent bonding process.
  • the protective gas atmosphere pre-cleaning with a solvent or through UV burning, it can be ensured that the contact points on the surfaces of the elements are free from contaminations which prevents formation of bubbles which could cause possible later delaminating.
  • the hydrogen portion of the gas atmosphere at normal pressure is higher than 5%, preferably higher than 9%.
  • Such a hydrogen portion of the gas atmosphere is advantageous to effectively compensate for diffusion of hydrogen out of the fused silica through approximately identical doping.
  • the hydrogen portion (partial pressure) in the gas atmosphere required for this purpose may be determined, like the temperature development, through finite element simulations from the required hydrogen content in the fused silica, the hydrogen homogeneity, the maximum admissible SiH content and the geometry of the parts.
  • the temperature curves during heating and cooling are selected such that delaminating of the elements is reduced.
  • the temperature curves are selected such that delaminating of the elements is reduced.
  • the maximum dwell temperature i.e. the temperature which is obtained between heating and cooling, is between 100 0 C and the transition temperature of the fused silica, preferably between 300 0 C and 1000 0 C, with particular preference between 300 0 C and 700 0 C, in particular between 300 0 C and 500 0 C. When this temperature has been reached, the two elements can bond at their contact points.
  • the maximum dwell temperature is maintained only for a short period such that, in particular, formation of silane and siloxane compounds can be reduced.
  • slight deformations of the elements are corrected in a subsequent process step through ion beam figuring or other finishing methods. Through surface or locally effective finishing, deformations of a few nm on the elements can still be corrected.
  • the chemical composition of the elements is monitored during the method e.g. by measuring the contamination on so-called getter plates (dummy plates of quartz) in the furnace used as dirt trap in the method, after termination of the process. This ensures that the chemical composition of the optical materials does not change.
  • the invention also relates to an optical component, in particular, a terminating element for a projection objective of a microlithography projection exposure apparatus, with two interconnected elements, at least one of which consists of fused silica, produced in accordance with the inventive method.
  • the optical component consists of two elements which are normally both produced from fused silica to ensure a uniform temperature expansion coefficient of the optical component.
  • the second element is a holder element for holding the first element.
  • the first element serves as optical element, i.e. it is introduced into the optical path and transmits radiation in a defined manner while the second element meets a purely mechanical or shielding function and is at most hit by the scattered light.
  • This provides a certain degree of freedom to optimize costs or improve the bonding result.
  • the hydrogen content of e.g. the holder element is not important for the mechanical and thermo-mechanical properties or for the quality of the bonding connection. For this reason, rejected material formed during the fused silica production process can e.g. be used, which does not meet the specified hydrogen range and therefore may not be used in an optical application.
  • the optical homogeneity and number of bubbles are also not critical for the holder element. For this reason raw glass may be used which is obtained from the same synthesis process as the glass for optical elements, which is however, not further refined, e.g. formed or annealed, after sintering. These expensive processes are usually carried out subsequently to adjust the optical properties such as index homogeneity and stress birefringence and to eliminate bubbles.
  • the first and second elements consist of synthetic fused silica, preferably having the same OH content.
  • the use of synthetic fused silica having the same OH content for both elements is based on the consideration that the OH content has a strong influence on the CTE (heat expansion coefficient) and the viscosity as a function of the temperature. The use of the same OH content ensures that the cooling rates act similarly on both elements, producing no or only little tension.
  • the second element is a holder element, the only "optical" requirement is basically that it does not release any easily diffusing substances such as e.g. Na + to the optical element during the bonding process, which have a negative influence on the transmission of the optical element. For this reason, a synthetic fused silica is preferably used for the holding element, which has only little metallic impurities.
  • the first element consists of synthetic fused silica and the second element of technical fused silica.
  • the use of technical quartz (i.e. from rock crystal or molten material from oscillator crystal production waste) for the holder element is advantageous if it is ensured that doping of metals into the optical element is limited to the region below the bonding surface, i.e. no impurities dope into the optical free diameter of the optically active element.
  • Technical quartz is much cheaper and mechanically more stable than synthetic fused silica.
  • the first element has a OH content of less than 500 ppm, preferably less than 300 ppm, with particular preference less than 100 ppm.
  • a low OH content reduces compaction and polarization-induced birefringence. Only the inventive method ensures that such a material can be bonded at the temperatures required for this purpose without reducing the service life of the optical component formed thereby.
  • the first element has a hydrogen content in a range between 2 x 10 15 and 5 x 10 17 molecules/cm 3 , preferably between 15 x 10 15 and 1 x 10 17 molecules/cm 3 .
  • This range ensures on the one hand that a hydrogen content in the optical element is not fallen below, which would produce increased induced absorption and compaction and on the other hand that the amount of hydrogen present is not too large thereby preventing increased SiH formation and rarefaction.
  • the second element is doped with at least one element of the group consisting of rubidium, caesium, beryllium, magnesium, calcium, strontium, barium, boron, and aluminium.
  • Synthetic fused silica can be doped already during production through adding respective compounds to the synthesis flame or doping during sintering, e.g. with metals.
  • the alkaline metals of lower atomic number Li, Na, K
  • Rb, Cs, alkaline earth metals or members of the third main group such as boron and aluminium are e.g. suited.
  • the second element has an OH content of more than 500 ppm, in particular of more than 1000 ppm.
  • a soot process is required to produce fused silica with OH contents of less than 500 ppm. If this OH content is exceeded, fused silica produced in a direct deposition process may also be used instead of the soot process, which is generally less expensive than fused silica produced through a soot process.
  • the holder element has a substantially higher OH content than the optical element (typically ⁇ 500 ppm). OH-rich fused silica is considerably more viscous during heating than OH-poor glass.
  • the support ring may adapt to the optical element, i.e. it is not deformed or bent during bonding and cooling.
  • SiOH groups moreover play a large role in bonding, since a SiOH group bonds more easily with Si-O-Si or Si-H through release of hydrogen compared to two directly bonding Si-O-Si chains and also since Si-OH groups can be directly bonded through hydrogen bridge bonding or covalent bonds in the form of Si-O- O-Si.
  • the support ring may have more OH groups thereby obtaining a higher solidity at the same bonding temperature, or obtaining a more solid connection at a lower temperature.
  • the second element has a smaller OH content than the first element.
  • the second element is formed as support ring and the first element as terminating plate or terminating lens. While the terminating plate or terminating lens serves as optical element, the support ring has a purely mechanical function.
  • the above presented material types can be used for the latter which optimizes the bonding process and reduces the production costs of the terminating element.
  • the invention also concerns a projection objective in a microlithography projection exposure apparatus for imaging a structure on a light-sensitive substrate, with a terminating element of this type, and a microlithography projection exposure apparatus comprising such a projection objective, wherein an immersion liquid is disposed between the terminating element and the light- sensitive substrate.
  • Fig. 1 shows an optical terminating element for a projection objective which consists of a terminating plate and a support ring in a furnace with a gas atmosphere;
  • Fig. 2 shows a schematic illustration of the wafer-side end of a projection objective of a microlithography projection exposure apparatus with the terminating element of Fig. 1 which is in contact with an immersion liquid.
  • Fig. 1 shows a terminating plate 1 of fused silica as first element and a support ring 2 of fused silica as second element which are brought together in a furnace 3.
  • the furnace 3 has a gas atmosphere 5 which comprises an inert gas to prevent contamination during the production of a connection between the support ring 2 and the terminating plate 1 (bonding process). Further gases may be supplied to or discharged from the furnace 3 during the bonding process, wherein the supply and discharge lines for the gases are not illustrated in Fig. 1.
  • So-called getter plates i.e. dummy plates of quartz, may also be introduced into the furnace 3. Impurities which form during the process are precipitated thereon. After termination of the process, these show the degree of contamination which permits later quality control, e.g. with respect to the transmission properties.
  • the support ring 2 is wrung to the terminating plate 1 at contact points 4 in a protective gas atmosphere before introduction into the furnace 3.
  • the support ring 2 and the terminating plate 1 together form an optical terminating element 6 of a projection objective for microlithography as soon as these have been permanently connected by the bonding process.
  • a terminating lens may e.g. be used as alternative to the terminating plate 1.
  • the hydrogen is usually introduced during the synthesis of the fused silica, i.e. in a hot state which can be realized e.g. through adjusting the flame stochiometry for directly deposited fused silica or during the soot process through sintering of the quartz powder in a hydrogen atmosphere.
  • a certain portion of silane (SiH) is automatically produced, i.e. the hydrogen reacts with the silicon of the glass matrix.
  • OH thereby acts as getter i.e. the more OH groups a glass contains, the less SiH is formed with the same hydrogen content and identical thermal history.
  • a high OH content therefore reduces formation of silane.
  • the terminating plate 2 and the support ring 1 can be heated to high temperatures without the danger of excessive silane formation.
  • the gas atmosphere 5 in the furnace 3 is adjusted such that it contains a permanent hydrogen portion of e.g. 10% (vol.) at one atmosphere.
  • the hydrogen content of 10% is adjusted to the lithographical optical material used in the present case and can also assume other, smaller or larger values.
  • One essential feature of the method is the partial pressure of the hydrogen, i.e. the absolute percentage of the hydrogen portion depends on the pressure in the gas atmosphere 5.
  • the hydrogen portion may also be adjusted to the temperature curves, the maximum temperature and the initial content of the introduced elements during the process.
  • hydrogen doping into and diffusing out of the support ring 2 and of the terminating plate 1 are balanced such that the hydrogen content of the terminating plate 1 set by the producer can substantially be maintained also during connection.
  • the furnace 3 is heated from 20 0 C to a temperature of approximately 800 0 C. This temperature is kept only for a short time to reduce SiH formation.
  • the furnace 3 is subsequently cooled, wherein the cooling rates are not too fast and the annealing time is optimized.
  • the final element 6 produced during the bonding process has a hydrogen content of approximately 2 x 10 16 molecules/cm 3 at least in the terminating plate 1 which ensures that defects such as compaction or microchannels which can form in the fused silica during irradiation with ultraviolet laser light of e.g. 193 nm, are saturated, and at the same time occurrence of rarefaction and SiH formation is prevented.
  • the material for the terminating plate 1 is finely annealed by the producer in contrast to the first variant, but is delivered without being charged with hydrogen.
  • the hydrogen content of the support ring 2 is not that important since it serves as holder element and meets only a mechanical function.
  • the bonding process is carried out as described above, wherein the hydrogen portion of the gas atmosphere 5 is increased from 0% to 10% only during the cooling phase, at the earliest when the temperature has fallen below 500 0 C, by adding hydrogen to the purge gas.
  • the furnace 3 may be a highly pressurized autoclave which facilitates loading with hydrogen.
  • the loading of the producer which also depends on the geometry of the part to be loaded basically is carried through later on with the connected elements.
  • the hydrogen may be loaded alternatively only after cooling.
  • the optical terminating element 6 joined in the above-described manner is mounted to a projection objective 7 of a microlithography projection exposure apparatus shown in Fig. 2 which images a structure (mask), which is not illustrated, onto a light-sensitive substrate 8.
  • a projection objective 7 of a microlithography projection exposure apparatus shown in Fig. 2 which images a structure (mask), which is not illustrated, onto a light-sensitive substrate 8.
  • an immersion liquid 9, e.g. water between the final element 6 and the substrate 8.
  • the larger numerical aperture produced in this manner permits imaging of smaller structures with the exposure apparatus than is possible with use of air or vacuum as medium between projection objective 7 and substrate 8.
  • the final element 6 is in contact with the immersion liquid 9 on the wafer side which poses particular requirements e.g. with regard to impermeability, to the connection between support ring 2 and terminating plate 1.
  • requirements are met by the connection of the terminating element 6 produced using one of the two above-described method variants. Further modifications and variants of the method in addition to the two above-described methods are, of course, possible, wherein the joint meets these requirements without using additional materials. Different optical materials may be used for the support ring 2 and the terminating plate 1 if these have a similar temperature expansion coefficient.
  • the fused silica material used in this case for the final plate 1 is generally synthetic fused silica with an OH content of less than 500 ppm, in particular, less than 300 ppm and with particular preference less than 100 ppm.
  • the hydrogen content of the final plate 1 is typically in a region between 2 x 10 15 and 5 x 10 17 molecules/cm 3 , preferably between 15 x 10 15 and 1 x 10 17 molecules/cm 3 .
  • the support ring 2 may also consist of synthetic fused silica, wherein, in particular, the OH content corresponds to that of the terminating plate 1 such that its temperature expansion coefficient does not differ from that of the terminating plate 1.
  • the support ring 2 does not discharge any diffusing substances such as e.g. Na + ions to the terminating plate 1 or the immersion liquid 9.
  • Synthetic fused silica is suited for this purpose, which generally has very few metallic impurities.
  • Technical fused silica may alternatively also be used if doping can be kept that small that the substances do not dope into the optical free diameter of the final plate 1 which can be ensured e.g. through stabilizing the technical fused silica through certain metallic impurities.
  • the hydrogen content of the support ring 2 plays a minor role. Its OH content can either correspond to that of the terminating plate 1 or may be more or less.
  • synthetic fused silica which was produced in a direct precipitation process may be used which saves costs and optimizes the bonding process.
  • the terminating plate 1 is thin and the support ring 2 is relatively thick compared thereto, the latter may offer a stable and very flat support surface during the bonding process, to which the instable final plate 1 adjusts.
  • the hydrogen content set in the terminating plate 1 ensures a high optical performance and service life of the terminating element 6.
  • a terminating element 6 with a terminating plate 1 which consist of a material which has only a small compaction and an OH content of less than 100 ppm, the loss in imaging contrast can be reduced and preservation of the polarization of the radiation can be improved.

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Abstract

L'invention concerne un procédé permettant de connecter deux éléments (1, 2), au moins l'un des éléments étant composé de silice fondue. Ces deux éléments (1, 2) sont connectés l'un à l'autre via une liaison par fusion dans une atmosphère gazeuse (5), de préférence, à des températures comprises entre 300° C et 1000° C, la partie hydrogène de l'atmosphère gazeuse (5) étant réglée de sorte que la teneur en hydrogène du premier et/ou le second élément (1, 2) de silice fondue est sensiblement conservée. Un composant optique, en particulier, un élément de terminaison (6) destiné à un objectif de projection d'appareil d'exposition par projection microlithographique est produit selon ledit procédé.
PCT/EP2005/004950 2005-04-16 2005-05-06 Procede permettant de connecter deux elements d'un composant optique WO2006111185A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE112005003536T DE112005003536T5 (de) 2005-04-16 2005-05-06 Verfahren zum Verbinden zweier Elemente und optische Komponente

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102005017539 2005-04-16
DE102005017539.2 2005-04-16

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WO2006111185A1 true WO2006111185A1 (fr) 2006-10-26

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009030124A1 (de) * 2009-06-24 2010-12-30 Carl Zeiss Sms Gmbh Hochstabile Optik und Verfahren zu deren Herstellung
WO2016001092A1 (fr) * 2014-07-01 2016-01-07 Carl Zeiss Smt Gmbh Élément optique, manipulateur optique, lentille de projection et appareil d'exposition par projection
EP2456726B1 (fr) * 2009-07-23 2020-11-11 Corning Inc. Verre de silice présentant une absorption induite saturée et son procédé de fabrication

Citations (6)

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JPH06298539A (ja) * 1993-04-09 1994-10-25 Naoetsu Denshi Kogyo Kk ガラス材の接着方法
US20020077244A1 (en) * 2000-10-03 2002-06-20 Borrelli Nicholas F. Photolithography methods and systems
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