WO2006104100A8 - 水パージ剤およびそれを用いたレジストパターン形成方法 - Google Patents

水パージ剤およびそれを用いたレジストパターン形成方法 Download PDF

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Publication number
WO2006104100A8
WO2006104100A8 PCT/JP2006/306169 JP2006306169W WO2006104100A8 WO 2006104100 A8 WO2006104100 A8 WO 2006104100A8 JP 2006306169 W JP2006306169 W JP 2006306169W WO 2006104100 A8 WO2006104100 A8 WO 2006104100A8
Authority
WO
WIPO (PCT)
Prior art keywords
resist pattern
pattern formation
purge agent
water purge
same
Prior art date
Application number
PCT/JP2006/306169
Other languages
English (en)
French (fr)
Other versions
WO2006104100A1 (ja
Inventor
豊通 島田
Original Assignee
旭硝子株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 旭硝子株式会社 filed Critical 旭硝子株式会社
Publication of WO2006104100A1 publication Critical patent/WO2006104100A1/ja
Publication of WO2006104100A8 publication Critical patent/WO2006104100A8/ja

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

液浸リソグラフィプロセスにおけるディフェクトを低減する。露光後現像前の加熱に先立って、液浸露光したウェハ表面の付着水を少なくとも非水溶剤を含む水パージ剤で除去する工程を含む液浸リソグラフィプロセスによるレジストパターン形成方法。液浸リソグラフィプロセスにおける露光用水を除去するための非水溶剤を含む水パージ剤。
PCT/JP2006/306169 2005-03-29 2006-03-27 水パージ剤およびそれを用いたレジストパターン形成方法 WO2006104100A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005-095371 2005-03-29
JP2005095371A JP2006278693A (ja) 2005-03-29 2005-03-29 水パージ剤およびそれを用いたレジストパターン形成方法

Publications (2)

Publication Number Publication Date
WO2006104100A1 WO2006104100A1 (ja) 2006-10-05
WO2006104100A8 true WO2006104100A8 (ja) 2009-08-27

Family

ID=37053356

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2006/306169 WO2006104100A1 (ja) 2005-03-29 2006-03-27 水パージ剤およびそれを用いたレジストパターン形成方法

Country Status (3)

Country Link
JP (1) JP2006278693A (ja)
TW (1) TW200707130A (ja)
WO (1) WO2006104100A1 (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008153422A (ja) * 2006-12-18 2008-07-03 Tokyo Electron Ltd 塗布・現像装置およびパターン形成方法
JP2009002999A (ja) * 2007-06-19 2009-01-08 Tokyo Ohka Kogyo Co Ltd レジストパターン形成方法、表面改質材料
JP5308054B2 (ja) * 2008-04-16 2013-10-09 株式会社Ｓｏｋｕｄｏ 基板処理装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3017342B2 (ja) * 1991-11-14 2000-03-06 旭化成工業株式会社 水切り用溶剤組成物
JPH0671103A (ja) * 1992-01-27 1994-03-15 Asahi Chem Ind Co Ltd 水切り用フッ素系溶剤
KR100594815B1 (ko) * 1999-12-24 2006-07-03 삼성전자주식회사 포토레지스트 린스용 씬너 및 이를 이용한 포토레지스트막의 처리 방법
JP3752668B2 (ja) * 2002-01-15 2006-03-08 独立行政法人産業技術総合研究所 フッ素系水切り溶剤
TW200424767A (en) * 2003-02-20 2004-11-16 Tokyo Ohka Kogyo Co Ltd Immersion exposure process-use resist protection film forming material, composite film, and resist pattern forming method

Also Published As

Publication number Publication date
JP2006278693A (ja) 2006-10-12
TW200707130A (en) 2007-02-16
WO2006104100A1 (ja) 2006-10-05

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