WO2006098420A1 - Dispositif electroluminescent et dispositif - Google Patents

Dispositif electroluminescent et dispositif Download PDF

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Publication number
WO2006098420A1
WO2006098420A1 PCT/JP2006/305320 JP2006305320W WO2006098420A1 WO 2006098420 A1 WO2006098420 A1 WO 2006098420A1 JP 2006305320 W JP2006305320 W JP 2006305320W WO 2006098420 A1 WO2006098420 A1 WO 2006098420A1
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Prior art keywords
organic semiconductor
semiconductor layer
electrode
light emitting
layer
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PCT/JP2006/305320
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English (en)
Japanese (ja)
Inventor
Kenji Nakamura
Takuya Hata
Atsushi Yoshizawa
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Pioneer Corporation
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Publication of WO2006098420A1 publication Critical patent/WO2006098420A1/fr

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/30—Organic light-emitting transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays

Definitions

  • the present invention relates to a light-emitting element and a display device using a compound having a carrier transporting property (hole or electron mobility) and having a semiconductor layer made of such a compound.
  • Organic EL elements include a red EL element having a structure emitting light in red, a green EL element having a structure emitting light in green, and a blue EL element having a structure emitting light in blue.
  • a color display device can be realized by arranging these three organic EL elements emitting red, blue, and green R GB as a single pixel light emitting unit and arranging a plurality of pixels in a matrix on the panel.
  • a passive matrix driving type and an active matrix driving type are known.
  • Active matrix drive type EL display devices have advantages such as lower power consumption and less crosstalk between pixels compared to passive matrix type devices, especially large-screen display devices and high-definition display. Suitable for equipment.
  • the display panel of an active matrix drive type EL display device has an anode power supply line, a cathode power supply line, a scanning line for horizontal scanning, and a de-evening line arranged across each scanning line in a grid pattern. Is formed. Scanning line and de-evening line RGB subpixels are formed at each RGB intersection.
  • a scan line is connected to the gate of a field effect transistor (FET) for selecting a scan line
  • a data line is connected to the drain
  • the source is connected to the source.
  • a drive voltage is applied to the source of the light emission drive F E T via an anode power line, and the anode end of the EL element is connected to the drain D thereof.
  • a capacitor is connected between the gate and source of the light emission drive FET.
  • a ground potential is applied to the cathode end of the EL element via the cathode power supply line.
  • organic light-emitting devices represented by organic EL devices
  • organic EL devices are basically active devices that exhibit diode characteristics, and most products that have been commercialized are driven by a passive matrix drive.
  • line-sequential driving requires instantaneously high brightness, and the limit number of scanning lines is limited, so it is difficult to obtain a high-definition display device.
  • An example of a problem to be solved by the present invention is to provide a light emitting element that suppresses a current component independent of the voltage applied to the auxiliary electrode.
  • the light emitting device of the present invention is a light emitting device comprising a light emitting layer formed between a pair of opposed electrodes, and is formed between at least one of the light emitting layer and the pair of electrodes.
  • a carrier transporting organic semiconductor layer, an auxiliary electrode disposed on an opposite side of the surface facing the other electrode of the electrode on the organic semiconductor layer side through an insulating layer, and the organic semiconductor layer side And a carrier regulating layer inserted between and in contact with the organic semiconductor layer, and a carrier supply portion in which the electrode on the organic semiconductor layer side is in contact with the organic semiconductor layer. And .
  • the display device of the present invention is a display device in which a plurality of light emitting units are arranged in a matrix.
  • Each of the light emitting units is a light emitting element including a light emitting layer formed between a pair of opposed electrodes, and is formed between at least one of the light emitting layer and the pair of electrodes.
  • a carrier regulating layer inserted between and in contact with the organic semiconductor layer, and the carrier on the side of the organic semiconductor layer has a carrier supply part in contact with the organic semiconductor layer.
  • FIG. 1 is a partial cross-sectional view showing an organic EL element according to an embodiment of the present invention.
  • FIG. 2 is a schematic diagram for explaining the energy levels of the organic EL device according to the embodiment of the present invention. It is a mere idea.
  • FIG. 3 is a partial cross-sectional view showing an organic EL device according to an embodiment of the present invention.
  • FIG. 3A is a partial plan view seen from the substrate side of the organic EL device according to the embodiment of the present invention.
  • FIG. 4 is a partial sectional view showing an organic EL device according to another embodiment of the present invention.
  • 5 to 8 are conceptual diagrams illustrating energy levels of organic EL devices according to other embodiments of the present invention.
  • FIG. 9 is an equivalent circuit diagram showing a sub-pixel light emitting unit of the organic EL display device according to the embodiment of the present invention.
  • FIG. 10 is a cross-sectional view of a switching organic TFT element in a sub-pixel light emitting unit of an organic EL display device according to an embodiment of the present invention.
  • FIGS. 11 to 18 are partial plan views of the substrate in the organic EL display panel manufacturing process of the embodiment according to the present invention.
  • FIG. 1 shows light emission formed on a substrate 10 having a light emitting layer 16 3 formed between a pair of opposed electrodes (anode 11 1 and cathode 15) in an embodiment of the present invention.
  • the organic EL element 1 1 4 is shown.
  • the organic EL element 1 1 4 includes a light-emitting layer 1 6 3 and at least one of a pair of electrodes (for example, an anode 1 1) and a carrier transporting organic semiconductor layer 1 3 (for example, a hole injection layer). ) have. Furthermore, the organic EL element 1 1 4 has the other electrode (for example, The insulating layer 12 is provided on the opposite side of the surface facing the pole 15), and the auxiliary electrode 14 is disposed through the insulating layer 12.
  • a carrier regulation layer BF inserted in contact between the organic semiconductor layer 1 3 side anode 1 1 and the organic semiconductor layer 1 3; and a carrier supply in which the anode 1 1 contacts the organic semiconductor layer 1 3. Department has CPP.
  • the work function value of the carrier restriction layer BF is smaller than the work function value of the anode 11.
  • the difference between the work function value of the anode 11 and the ionization potential value of the organic semiconductor layer 13 is preferably within 0.5 eV.
  • the carrier transporting organic semiconductor layer 13 may be, for example, a hole injection layer, a hole transport layer, or a laminate thereof.
  • the anode 11 on the organic semiconductor layer 13 side such as a hole injection layer and a hole transport layer is formed so as to define a pattern for carriers passing through the organic semiconductor layer.
  • the material of the carrier regulation layer BF is selected because its work function value is larger than the ionization potential value of the organic semiconductor layer 13.
  • the material of the anode 11 is selected from those whose work function value is smaller than the ionization potential value of the organic semiconductor layer 13.
  • the light-emitting device of the embodiment is installed so that at least a part thereof is opposed to each other through the auxiliary electrode 14, the insulating layer 12, the hole injection layer (organic semiconductor layer 13), and the light-emitting layer 16 3
  • the anode 11 is formed, and the anode 11 is formed between the light emitting layer 16 3 and the hole injection layer (FIG. 1).
  • a carrier regulation layer BF made of a metal material different from the metal material of the anode 11 is laminated on the anode 11, and injected into the organic semiconductor layer 13 such as a hole injection layer by the carrier regulation layer BF.
  • the route of the carrier is defined.
  • the carrier regulation layer BF Due to carrier movement in the organic semiconductor, the carrier regulation layer BF has a value of its ionization potential, that is, the work function (or ionization potential) between the work function of the contact electrode and the ionization potential of the organic semiconductor layer. Selected based on. This is because it is better to have a large energy barrier to inhibit carrier movement.
  • the work function Wf 1 of the anode 11 made of metal and the work function Wf 2 of the carrier regulation layer BF are energy measured from the vacuum level (0 e V) to each Fermi level.
  • the ionization potential I p 1 of the organic semiconductor layer 13 is the energy measured from the vacuum level to the highest occupied molecular orbital (HOMO) level at the top of the valence band.
  • the electron affinity E a is the energy measured from the vacuum level (VACUUM LEVEL) at the reference energy level of 0 eV to the lowest unoccupied molecular orbital (LUMO) level at the bottom of the conduction band.
  • the carrier regulation layer BF As the material of the carrier regulation layer BF used in this embodiment, a hole injection material (organic semiconductor layer 13) having an ionization potential I pi (e V) and a work function Wf 1 (eV ) And a carrier regulation layer BF having a work function 2 (eV) are laminated, it is preferable that I p 1 and Wf 2 have a relationship of I pl> Wi 2.
  • I p 1 and Wf 2 have a relationship of I pl> Wi 2.
  • I p 1 and Wf 1 satisfy I pl ⁇ Wf 1, but I p 1 ⁇ Wf 1 is acceptable, and the difference between I p 1 and Wf 1 should be within 0.5 eV. .
  • hole injection at the surface where the hole injection layer (organic semiconductor layer 13) and the anode 11 are in contact is not hindered, but at the surface where the hole injection layer and the carrier regulating layer BF are in contact. No hole is injected due to the difference in work function, and by suppressing the current component that does not depend on the voltage applied to the auxiliary electrode 14, it is possible to reduce the FF current and improve the ONZ OFF ratio of luminance. it can.
  • the patterned auxiliary electrode 14 is formed on the glass substrate, and the insulating layer 12 is formed on the auxiliary electrode 14. Thereafter, a hole injection layer (organic semiconductor layer 13) is formed by vacuum deposition, spin coating, or the like.
  • a hole injection layer organic semiconductor layer 13
  • the film-formability of the coating type hole injection material is improved, and it is formed not only by the coating type hole injection material but also by vacuum deposition.
  • the current flowing through the cathode 15 and the light emission intensity can be reduced when no voltage is applied to the anode 11 (when OFF). As a result, the ratio of the current when the voltage is applied to the anode 11 (ON), the emission intensity, the current when OFF, and the emission intensity are improved.
  • Cathode 15, anode 11 and auxiliary electrode 14 include Ti, Al, Li: AKCu, Ni, Ag, Mg: Ag Au, Pt, Pd, Ir, Cr, Mo, W , Metals such as T a, and alloys thereof.
  • a conductive polymer such as polyaniline or PE DT: PSS can be used.
  • the transparent conductive thin film oxides such as tin-doped indium oxide (IT_ ⁇ ), zinc oxide doped Injiu arm (iota Zetaomikuron), indium oxide (iota eta 2 ⁇ 3), zinc oxide (Zetaitaomikuron), tin oxide (Sn 0 2
  • the present invention is not limited to this.
  • each electrode is preferably about 30 to 500 nm.
  • the range of 50 to 300 nm is particularly suitable for the cathode 15 material and the auxiliary electrode 14.
  • a range of about 30 to 200 nm is particularly suitable for the cathode 15 material.
  • These electrode materials are preferably prepared by a vacuum evaporation method or a sputtering method.
  • Various insulating materials represented by S i 0 2 and S i 3 N 4 can be used for the insulating layer 12, and an inorganic oxide film having a high relative dielectric constant is particularly preferable.
  • inorganic oxides include silicon oxide, aluminum oxide, tantalum oxide, titanium oxide, tin oxide, vanadium oxide, barium strontium titanate, barium zirconate titanate, lead zirconate titanate, lead titanate And strontium titanate, barium titanate, barium magnesium fluoride, bismuth titanate, strontium bismuth titanate, strontium bismuth tantalate, bismuth tantalate niobate, and trioxay germanium thorium.
  • silicon oxide, aluminum oxide, tantalum oxide, and titanium oxide are preferable.
  • Inorganic nitrides such as silicon nitride and aluminum nitride can also be suitably used.
  • organic compound film examples include polyimide, polyamide, polyester, polyacrylate, photo-curing resin of photo radical polymerization system, photo-thion polymerization system, copolymer containing acrylonitrile component, polyvinyl phenol, polyvinyl alcohol. , Nopolac resin, and anoethyl pullulan, a polymer, a phosphazene compound containing an elastomer, and the like can also be used.
  • the hole injection layer (organic semiconductor layer 1 3) has the function of facilitating the injection of holes from the anode 11 1 and the function of transporting holes stably.
  • the material is copper phthalocyanine (C u P Porphyrin derivatives typified by c), polyacene typified by Peyusen, and high-molecular allylamin called Suvaj Burstamine typified by m 1 TDATA are often used in low molecular weight systems.
  • a layer in which conductivity is improved by mixing Lewis acid tetrafluorotetracyanoquinodimethane (F 4 -TCNQ) or the like with a porphyrin derivative, a triphenyl 7-amine derivative, or the like can be used.
  • the mixing ratio is preferably mixed at a weight ratio of 5 to 95%.
  • polymer materials such as polyaniline (PAN I), polythiophene derivative (PEDOT), and poly (3-hexylthiophene) (P 3HT) can be used in the polymer system.
  • PAN I polyaniline
  • PEDOT polythiophene derivative
  • P 3HT poly (3-hexylthiophene)
  • the hole injection layer organic semiconductor layer 13
  • the light emitting layer 163 contains a fluorescent material or a phosphorescent material which is a compound having a light emitting function.
  • a fluorescent substance include at least one selected from compounds such as those disclosed in JP-A-63-264692, such as quinacridone, rubrene, and styryl dyes.
  • phosphorescent materials include organic iridium complexes and organic platinum complexes as described in Appl. Phy s. Lett., Vol. 75, Section 4, 1999.
  • a hole transport layer 13 A may be inserted as an organic semiconductor layer 13 between the hole injection layer and the light emitting layer 163, and the materials thereof include a triphenyldiamine derivative, a styrylamine derivative.
  • the materials thereof include a triphenyldiamine derivative, a styrylamine derivative.
  • amine derivatives having aromatic condensed rings, strong rubazole derivatives, and polymer materials include polyvinylcarbazole and derivatives thereof, and polythiophene. Two or more of these compounds may be used in combination.
  • an electron injection layer and / or an electron transport layer 13 B may be used as an organic semiconductor layer between the light emitting layer 163 and the cathode 15 as necessary.
  • the electron injecting layer and / or the electron transporting layer 13 B includes an organometallic complex having 8-quinolinol or a derivative thereof such as tris (8-quinolinolato) aluminum (A 1 Q 3) as a ligand. Any quinoline derivative, oxadiazole derivative, perylene derivative, pyridine derivative, pyrimidine derivative, quinoxaline derivative, diphenylquinone derivative, nitro-substituted fluorene derivative, or the like can be used.
  • the electron injection layer and / or the electron transport layer may also serve as the light emitting layer 16 3. In such a case, it is preferable to use tris (8 quinolinolato) aluminum or the like.
  • the electron injection layer and the electron transport layer are formed by stacking, it is preferable to stack from the cathode 15 side in the order of the compounds having a large electron affinity value.
  • the material of the substrate 10 is not limited to a translucent material such as glass, quartz, polystyrene, or other plastic materials, but is an opaque material such as silicon or A1, thermosetting resin such as phenolic resin, or poly strength.
  • a thermoplastic resin such as can be used, but is not limited thereto.
  • a light emitting device as shown in FIG. 3 was manufactured.
  • Auxiliary electrode formation After ITO is formed on a non-alkali glass substrate by sputtering to 100 nm, a photoresist is applied by spin coating. Pattern the previous photoresist by exposure and development using an optical mask, and remove the ITO film where there is no photoresist pattern from it by milling. Finally, dissolve the photoresist using a stripping solution. It was.
  • insulating layer As the insulating layer, a film having a thickness of 4200 nm was formed by spin coating using a 10 wt% propylene glycol monomethyl ether acetate (PGMEA) solution. After that, the polymer film formed on the edge of the auxiliary electrode is wiped with cotton soaked with PGM EA, and hot The plate was baked at 230 ° C for 20 minutes.
  • PGM EA propylene glycol monomethyl ether acetate
  • anode As an anode, gold was deposited to a thickness of 50 nm by vacuum deposition using a metal mask. The deposition rate of gold was set to 0.lmZs. Subsequently, 1 Onm of aluminum was deposited by vacuum deposition using the same mask. At this time, the deposition rate of aluminum was set to 0.2 nm / s. ,
  • Pen Onsen was deposited as a 5 Onm film as the hole injection layer. At this time, the film deposition rate of Penyusen was set to 0.1 nmZs.
  • Nichi NPD was deposited to a thickness of 50 nm.
  • Tris (8-quinolinolato) aluminum was deposited as a light emitting layer material to a thickness of 60 nm by vacuum evaporation.
  • FIG. 5 shows the energy levels of part of the light-emitting element of Example 1 (Fig. 3).
  • FIG. 3A shows a plan view of the light emitting element of Example 1 as viewed from the substrate side.
  • the electrode on the organic semiconductor layer side in this case, the anode 11 and the carrier restricting layer BF are formed in a comb-like shape or a saddle-like shape. If at least one of the key-regulating layers BF has a lattice-like, comb-like or bowl-like shape, the anode 11 on the organic semiconductor layer side has a smaller area than the other cathode 15 and passes through the organic semiconductor layer.
  • a pattern for the carrier can be defined.
  • the light emitting device fabricated in this Example 2 is an organic EL device 1 1 having a light emitting layer 1 6 3 formed between a pair of opposing anodes 11 and cathodes 15. 4 having an electron transport layer 1 3 B as a carrier transporting organic semiconductor layer 1 3 formed between the light emitting layer 1 6 3 and the cathode 1 5 and facing the other anode 1 1.
  • the auxiliary electrode 14 disposed on the opposite side of the cathode 1 5 surface via the insulating layer 1 2, and the carrier inserted between the cathode 15 and the organic semiconductor layer 1 3 in contact therewith
  • the regulation layer BF and the cathode supply unit CPP in which the cathode 15 is in contact with the organic semiconductor layer 13 are provided.
  • the work function value of the carrier restriction layer BF is larger than the work function value of the cathode 15.
  • the carrier transporting organic semiconductor layer 13 may be, for example, an electron injection layer, an electron transport layer, or a laminate thereof.
  • a light emitting device was manufactured in the following process.
  • ITO was formed on a non-reactive glass substrate by sputtering to 100 nm and then patterned in the same manner as in Example 1.
  • S 1 0 2 was formed as an insulating layer by sputtering to a thickness of 30 nm. At this time, the deposition range was limited using a metal mask so that an insulating layer was not deposited on a part of the auxiliary electrode.
  • Tris (8-quinolinolato) albumin (A l Q 3) and coumarin 6 were co-deposited by vacuum evaporation to form a 40 nm film as the light emitting layer material. At this time, the concentration of coumarin 6 was 3 wt%. The deposition rate for A 1 q 3 was 0.3 nmZ s.
  • ⁇ -NPD was formed as a hole transport layer by vacuum evaporation using a 5 Onm metal mask.
  • CuP c was formed as a hole injection layer by vacuum evaporation using a 30 nm metal mask.
  • Example 1 the auxiliary electrode Z insulating layer anode hole injection layer hole transport layer / light emitting layer Z cathode is used, but as shown in FIG.
  • the hole transport layer the anode and the carrier regulation layer (with the hole transport layer) It is good also as a modification which provided in between and inserted.
  • Example 2 the auxiliary electrode insulating layer, cathode Z electron injection layer / light emitting layer, Z hole transport layer, hole injection layer, and anode are configured.
  • the cathode and the electron injection layer are formed. The order may be changed so that a cathode and a carrier regulating layer (inserted in contact with the electron transport layer) can be provided in the electron transport layer.
  • Example 1 the configuration of auxiliary electrode / insulating layer Z anode hole injection layer / light emitting layer / cathode is used in Example 2 auxiliary electrode / insulating layer / cathode / electron injection layer Z light emitting layer Z hole transport.
  • Layer no hole injection layer Although it has a structure of an anode, a hole blocking layer, an electron transport layer, an electron injection layer and / or an electron transport layer may be arbitrarily inserted.
  • Example 1 an anode is formed between the hole injection layer and the light emitting layer.
  • Example 2 the structure after the insulating layer is reversed, and the electron injection layer, cathode, light emitting layer, hole transport are reversed. You may form in order of a layer and an anode.
  • Example 1 the insulating layer was provided only between the auxiliary electrode and the hole injection layer, but an insulating film having substantially the same shape as the anode was formed on the anode to further reduce the leakage current between the anode and the cathode. It is good also as a structure to reduce.
  • the light emitting device according to the present embodiment is a passive device and can be easily manufactured without greatly changing the organic EL manufacturing process. Furthermore, by using the light emitting element of the present embodiment, it is possible to reduce the number of element parts arranged in one pixel when performing active matrix driving, and an organic EL display device using polysilicon or the like. Compared to the above, it is possible to reduce costs, reduce power consumption and extend the service life. In the above embodiment, an example of a light emitting element is shown. It can also be used for other pixels.
  • the active drive type display device according to the present invention can be realized by manufacturing at least one organic transistor, a necessary element such as a capacitor, a pixel electrode, and the like on a common substrate. As an example, the structure when applied to a display device is described below.
  • FIG. 9 is an equivalent circuit diagram showing the light emitting portion of the subpixel of the organic EL display panel.
  • Each of the light emitting sections 102 formed on the substrate 10 is composed of a switching organic TFT element 11 of a selection transistor, a capacitor 113 for holding a data voltage, and an organic EL element 114.
  • the gate electrode G of the switching organic TFT element 11 is connected to a scanning line SL to which an address signal is supplied, and the source electrode S of the switching organic TFT element 11 is connected to a data line DL to which a signal is supplied. It is connected.
  • the drain electrode D of the switching organic TFT element 11 is connected to the auxiliary electrode 14 of the organic EL element 114 and one terminal of the capacitor 113.
  • the anode 11 of the organic EL element 114 is connected to the power supply line V c c L, and the other side of the capacitor 113 is connected to the capacitor line Vc a p.
  • the cathode 15 of the organic EL element 114 is connected to the common electrode 170.
  • the power supply line V cc L and the common electrode 170 are respectively connected to voltage sources (not shown) that supply power to each.
  • Lower pattern on substrate 10 of OLED display panel (scan line SL, switch
  • the gate electrode G of the organic TFT element 11 1, the auxiliary electrode 14 of the organic EL element 1 1 4, and the other terminal of the capacitor 1 1 3 are, for example, conductor patterns that can be anodized. Oxide films formed by anodizing from these conductor patterns become insulating films and insulating layers 12 on the respective conductor patterns.
  • FIG. 10 shows an example of the structure of the switching organic TFT element 11.
  • the organic TFT element is composed of an organic semiconductor film 0SF, a source electrode S, and a drain made of organic semiconductors stacked so that a channel can be formed between the source electrode S and the drain electrode D facing each other and the source electrode and the drain electrode.
  • a gate electrode G that applies an electric field to the organic semiconductor film OSF between the electrodes D; and a gate insulating film GIF that covers the gate electrode G and is insulated from the source electrode S and the drain electrode D .
  • the method for manufacturing an organic EL display panel will be specifically described below.
  • a scanning line SL, a gate electrode G, one electrode of a capacitor 1 1 3 a, and an auxiliary electrode 14 of an organic EL element are placed on a substrate 10 such as glass.
  • a lower conductive pattern is formed.
  • the gate electrode material in the conductor pattern may be any metal that can be anodized such as Ta, and may be a single element such as Mg, Ti, Nb, or Zr, or an alloy or laminate thereof. Can be mentioned.
  • tantalum (T a) tantalum pentoxide obtained by the electrode anodized (T a 2 0 5) has a high dielectric constant of about 2 4, which is very advantageous for an organic TFT element electric current.
  • the conductor pattern may be a single layer or a multilayer wiring of two or more layers by further laminating a second conductor pattern.
  • all the following thin film pattern deposition methods are adapted to organic or inorganic materials.
  • a sputtering method using a mask an EB vapor deposition method, a resistance heating vapor deposition method, a CVD method, and a printing method can be used.
  • the lower conductor pattern can also be patterned by dry etching or wet etching.
  • insulating contact protection that can withstand anodic oxidation to form the contact part that connects the drain electrode I of the switching organic TFT element 1 1 and the auxiliary electrode 1 4 of the organic EL element in a later process
  • Each part CP is provided.
  • Metal oxides as the material of the protection section, the metal nitride, a compound of a metal such as metal fluorides, in example Example, A 1 2 0 3, S I_ ⁇ 2, S i N, such as S i ON, or insulating Polymers such as polyimide can be used.
  • portions that should not be anodized on the substrate 10 such as the end portions of the electrodes other than the contact portions are protected by forming an insulating mask.
  • the chemical conversion solution is brought into contact with the anodizable portion on the substrate formed in the patterning process, and anodization is performed while energizing them using the anode as an anode, and oxidation is performed from the conductor pattern such as the auxiliary electrode 14 and the distribution pattern.
  • Form a film anodic oxidation method.
  • the contact protector CP is removed by cleaning, and heat treatment is performed to stabilize the oxide film.
  • the auxiliary electrode 14 is an insulating layer 12 except for the contact portion CS where the metal part is exposed.
  • the power line V cc L and the gate electrode are covered with an oxide film, and the gate electrode and the capacitor electrode are simultaneously formed as the gate insulating film GIF and the dielectric layer 11 3 b, respectively.
  • An electronic circuit component is formed on the surface of the substrate after the anodizing treatment.
  • a substantially comb-shaped electrode is formed in a predetermined pattern on the insulating layer 12 as the anode 11 of the organic EL element.
  • Anode 1 1 It is formed so as to be connected to the power supply line V c c L.
  • the source electrode S of the switching organic TFT element is connected to the data line DL, and the drain electrode D is formed to be connected to the auxiliary electrode 14 of the corresponding organic EL element via the contact portion CS.
  • the material for the data line D L and the power supply line V cc L can be the same as the source Z drain electrode.
  • conjugated polymer compounds such as organic conductive materials, polyanilines, polythiophenes, and polypyrroles can also be used for the source and drain electrodes.
  • a low-cost method such as a printing method can be used for pattern formation.
  • a protective insulating film 18 that functions as a protective film for the pixel electrode edge and the organic semiconductor electrode edge is formed in a predetermined pattern. That is, the protective insulating film 18 is formed in a pattern that exposes the anode 11 of the organic EL element and exposes the source and drain electrodes and the gate insulating film of the organic TFT element.
  • an insulating polymer such as polyimide or a metal compound such as metal oxide, metal nitride, metal fluoride, for example, A 1 2 0 3, S i 0 2 , S i N, Si ON, etc. can be used.
  • the organic semiconductor film OS is connected to the exposed source and drain electrodes of the switching organic TFT element and the gate insulating film therebetween through the opening of the protective insulating film 18, respectively.
  • F is formed in a predetermined pattern by, for example, a vapor deposition method using a metal mask.
  • the material of the organic semiconductor film OSF a material having a high carrier mobility is preferable, and a low molecular organic semiconductor material or an organic semiconductor polymer can be used.
  • the hole injection layer material can be used as an organic semiconductor.
  • the surface of the gate insulating film between the source Z and drain electrodes can be covered with a self-assembled monolayer.
  • HMDS Hexmethyldisilazane, (CH 3 ) 3 Si′NHS i (CH 3 ) 3
  • OTS Octadecyltrichlorosilane CH 3 (CH 2 ) 17 Si C 1 3
  • an alignment film can be provided on the gate insulating film.
  • the organic EL device is not limited to the configuration of the present embodiment, and for example, a configuration using a polymer-containing EL material is also effective.
  • the organic material layer 160 including at least the light emitting layer is exposed on the exposed anode 11 through the opening of the protective insulating film 18 by, for example, vapor deposition using a metal mask. Formed.
  • the organic material layer 160 may include a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, and the like in addition to the light emitting layer.
  • the common electrode 170 is formed in a predetermined pattern by, for example, vapor deposition using a metal mask.
  • the common electrode After forming the organic material layer, for example, at a temperature below the glass transition point of each organic material layer so as not to degrade any organic material layer formed in the organic material layer forming step. There is a limit to film formation.
  • Seal with a sealing can in an inactive state to cover the formed circuit and the back of the organic EL element.
  • membrane sealing with an inorganic system or a polymer system may be used.
  • an insulating sealing film on the back surface of an organic EL element for example, a nitride such as silicon nitride, a nitrided oxide such as silicon nitride oxide, an oxide such as silicon oxide or aluminum oxide, or a carbide such as silicon carbide.
  • sealing with an inorganic sealing film made of or a multilayer sealing of a polymer and an inorganic film may be used.
  • an active matrix display type organic EL display panel has been described.
  • the present invention can also be applied to a substrate of a passive matrix display type panel in which TFT elements and the like are arranged around the screen of the panel.

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

L'invention concerne un dispositif électroluminescent comprenant une couche luminescente formée entre une paire d'électrodes opposées. Le dispositif électroluminescent comprend une couche semi-conductrice organique porteuse formée entre la couche luminescente et une des électrodes, une électrode auxiliaire disposée du côté de l'électrode sur le côté de la couche semi-conductrice organique opposé au côté face à l'autre électrode par l'intermédiaire d'une couche isolante, et une couche de régulation de porteuse disposée entre l'électrode sur le côté de la couche semi-conductrice organique et la couche semi-conductrice organique faisant contact. L'électrode sur le côté de la couche semi-conductrice organique comporte une partie d'alimentation en porteuse en contact avec la couche semi-conductrice organique.
PCT/JP2006/305320 2005-03-17 2006-03-13 Dispositif electroluminescent et dispositif WO2006098420A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005077049 2005-03-17
JP2005-077049 2005-03-17

Publications (1)

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WO2006098420A1 true WO2006098420A1 (fr) 2006-09-21

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008078027A (ja) * 2006-09-22 2008-04-03 Sony Corp 電気化学発光装置、及び電気化学発光素子の駆動方法
JP2008084644A (ja) * 2006-09-27 2008-04-10 Sony Corp 電気化学発光装置、及び電気化学発光素子の駆動方法
JP2008084664A (ja) * 2006-09-27 2008-04-10 Sony Corp 電気化学発光素子及び電気化学発光装置
JP2009230989A (ja) * 2008-03-21 2009-10-08 Brother Ind Ltd プレーナ電極を有する有機ｅｌ素子
CN104718638A (zh) * 2012-08-25 2015-06-17 破立纪元有限公司 具有改善性能的发光晶体管

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05326146A (ja) * 1992-01-07 1993-12-10 Toshiba Corp 有機ｅｌ素子
JP2002083692A (ja) * 2001-09-10 2002-03-22 Pioneer Electronic Corp 有機エレクトロルミネッセンス素子
JP2002343578A (ja) * 2001-05-10 2002-11-29 Nec Corp 発光体、発光素子、および発光表示装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05326146A (ja) * 1992-01-07 1993-12-10 Toshiba Corp 有機ｅｌ素子
JP2002343578A (ja) * 2001-05-10 2002-11-29 Nec Corp 発光体、発光素子、および発光表示装置
JP2002083692A (ja) * 2001-09-10 2002-03-22 Pioneer Electronic Corp 有機エレクトロルミネッセンス素子

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008078027A (ja) * 2006-09-22 2008-04-03 Sony Corp 電気化学発光装置、及び電気化学発光素子の駆動方法
JP2008084644A (ja) * 2006-09-27 2008-04-10 Sony Corp 電気化学発光装置、及び電気化学発光素子の駆動方法
JP2008084664A (ja) * 2006-09-27 2008-04-10 Sony Corp 電気化学発光素子及び電気化学発光装置
JP2009230989A (ja) * 2008-03-21 2009-10-08 Brother Ind Ltd プレーナ電極を有する有機ｅｌ素子
CN104718638A (zh) * 2012-08-25 2015-06-17 破立纪元有限公司 具有改善性能的发光晶体管

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