WO2006097129A1 - Capteur d'image plan - Google Patents

Capteur d'image plan Download PDF

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Publication number
WO2006097129A1
WO2006097129A1 PCT/EP2005/002871 EP2005002871W WO2006097129A1 WO 2006097129 A1 WO2006097129 A1 WO 2006097129A1 EP 2005002871 W EP2005002871 W EP 2005002871W WO 2006097129 A1 WO2006097129 A1 WO 2006097129A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
image sensor
image
sensor according
image detector
Prior art date
Application number
PCT/EP2005/002871
Other languages
German (de)
English (en)
Inventor
Uwe Vogel
Michael Scholles
Bernd Richter
Uwe Schelinski
Original Assignee
Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. filed Critical Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
Priority to PCT/EP2005/002871 priority Critical patent/WO2006097129A1/fr
Publication of WO2006097129A1 publication Critical patent/WO2006097129A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14665—Imagers using a photoconductor layer
    • H01L27/14676—X-ray, gamma-ray or corpuscular radiation imagers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors
    • H10K39/34—Organic image sensors integrated with organic light-emitting diodes [OLED]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/17—Passive-matrix OLED displays

Definitions

  • the present invention is concerned with a flat image sensor.
  • the present invention is concerned with a large area flat panel x-ray detector for use in medical imaging equipment.
  • x-ray detectors are finding increasing use in devices of diagnostic imaging in medicine, but also material inspection, eg. In the electronics and semiconductor industries.
  • small-format CCD or CMOS detectors are used, which detect X-ray radiation converted into visible light by means of a reducing projection optics.
  • the new detectors are to be used both in radiological diagnostics (X-rays, for example mammography) and in the verification of the patient's situation in radiotherapy. Furthermore, they will be incorporated into mobile C-arm X-ray equipment, which is an indispensable part of interventional procedures in cardiology (balloon dilatation), orthopedics, surgery and in particular accident surgery. Finally, this technology enables a whole new generation of reasonably priced, high-speed, high-resolution Cone-Beam CT devices.
  • x-ray detectors which include the digital acquisition of x-ray images and their further processing and evaluation in the Computer enable. Detectors for digital radiography are described, for example, in DE 19633580 A. Of particular importance is the high sensitivity of these ⁇ detectors to minimize radiation-related risks for patients.
  • Such X-ray detectors will replace the conventional X-ray films in the medium term if they are on the one hand large enough, ie have a dimension of about 40 cm x 40 cm, and have a sufficiently good spatial and brightness resolution and on the other hand are inexpensive to manufacture.
  • Active flat-panel detectors are used, which are designed as rnatrixförmige, laterally structured sensor arrays, which usually pixel-like photodetectors of amorphous silicon in combination with thin-film transistors for selective tive readout of • pixels.
  • rnatrixförmige laterally structured sensor arrays, which usually pixel-like photodetectors of amorphous silicon in combination with thin-film transistors for selective tive readout of • pixels.
  • detector types ie the image storage disks or image storage films on the one hand and the active flat-panel detectors on the other hand, if necessary, combined with converter layers, which are also referred to as scintillators, if the detectors themselves are not directly applicable or not sensitive enough for X-radiation.
  • the converter material or scintillator material converts the energy of the x-ray radiation into an electromagnetic radiation in that wavelength range in which the photodetector is sensitive. This is often the area of visible light.
  • the active Flachflambatetekoren meet the technical requirements for X-ray detectors in terms of local and brightness resolution largely. They even allow the recording of image sequences. However, for wide applications, these flat panel detectors are too costly, costing more than € 100,000 each. A major reason for the high cost of these detectors lies in the technological effort for their lateral structuring.
  • LSP laser scanned photo diode
  • Became known the area of a large- ', unstructured PiN diode layer is formed within an existing on its surface brightness distribution to a corresponding modulation of the existing in the interior of the semiconductor structure elec- field leads.
  • Bssi this "LSP” is the electric field, which reflects the brightness distribution, read out by point illumination with a light beam or laser beam of low intensity, whereby the device provides an electrical signal at its outer surface electrodes, which is a measure of the brightness of the original image is at the point hit by the light beam.
  • LSP a two-dimensional image is obtained, as in the image memories, in that the light beam of the laser source scans the detector surface.
  • a laser with a suitable deflection device is used as the laser source.
  • A-Sic H / a-Si: H tandem photodiodes; a numerical simulation, Fantoni, A. / Fernandes, M./Louro, P./Rodrigues, I./Vieira, M. Sensors and Actuators A 113 (2004), p. 324-328;
  • a non-pixel image reader for continuous image detection based on tandem heterostructures Vieira, M./ Fernandes, M. / Fantoni, A. / Louro, P .; Sensors and Actuators A 115 (2004), pp. 191-195;
  • US Pat. No. 4,954,706 A discloses an image sensor which comprises an unstructured photoconductive layer provided with a phosphor layer as a scintillator, the photoconductive layer being enclosed between strip-shaped electrodes which each have the same direction in a first direction. Under the photoconductive layer there is an excitation light source in the form of semiconductor LEDs, which is arranged in one-dimensional linear excitation
  • RECTlFIED SHEET (RULE 91) ISA / EP is divided, which run perpendicular to the E- lektrodenstMail.
  • the strip-shaped electrodes and, on the other hand, the one-dimensional excitation light sources are activated in order to determine readout ranges of the sensor.
  • the present invention has the object to provide a large-scale implementable image sensor that can be produced with relatively low technological complexity and compared to the cost of marketable large-scale image sensors low cost.
  • the present invention is based on the finding that a particularly simple, technologically easily realizable structure of an image sensor is achieved by having an image detector layer arrangement comprising an unstructured image detector layer, wherein the image sensor further comprises an OLED matrix extending over the image detector layer arrangement, having a plurality of selectively controllable OLEDs for punctual light stimulation of the image detector layer.
  • the stimulation of the laterally unstructured image detector layer can be implemented point by point in a manner that is easy to control without the need for the comparatively high constructional effort required for the "LSP" (laser scanned photodiode). todiode) is required.
  • the object of the invention also avoids the complex control and technologically difficult implementation of line light sources in the form of semiconductor LED lines with complementary activation of vertically extending electrodes, as is required in the technology discussed above according to US Pat. No. 4,947,070.
  • the invention achieves a selective readout of a picture detector layer, which in itself is unstructured, with a low level of technological complexity and a low overall depth.
  • the light stimulation of the image sensor according to the invention is carried out by an O-LED matrix, which can be applied by means of simple methods on commercially available, inexpensive ' available Schmdetektor Anlagenanssenen, which otherwise for reading by means of an applied laser beam according to the discussed "LSP ⁇ S technology, ie used.
  • the image sensor according to the invention is preferably used for the detection of images in X-ray diagnostics, but can also be used for other image captures, for example, images in the visible wavelength range.
  • the electrodes are each in the form of a plurality of parallel to each other running and spaced apart and electrically insulated from each other electrode strips, the electrode strips of the two electrodes are perpendicular to each other.
  • this electrode structure makes it possible to read out that partial charge from the charge storage layer, which is punctually stimulated with light by an optionally controlled OLED, with a signal / noise ratio which is increased compared to planar electrodes by means of readout circuits known per se, as also known for the so-called "LSP" (laser scanned pho - todiodes) were used.
  • LSP laser scanned pho - todiodes
  • Fig. 2 is a perspective view of a preferred electrode structure of the image sensor.
  • the flat-panel X-ray detector designated in its entirety by the reference numeral 1 comprises a flat image sensor 2 through which an image is taken, which images a radiation source 3 for X-ray radiation by irradiation of an object or patient 4 on the image sensor 2 ,
  • the two-dimensional image sensor 2 has on its main surface facing the object a scintillator layer 5, which serves in a manner known per se for converting the energy of the X-ray radiation into an electromagnetic radiation in which nigen wavelength range in which a to the scintillator 5 - adjacent image detector layer assembly 6 is sensitive.
  • the image detector layer arrangement 6 has a laterally unstructured image detector layer 7.
  • a possible embodiment of such an image detector layer arrangement 6 is a laterally unstructured large-area P-i-N diode layer arrangement.
  • electrodes 8, 9 are arranged, which in the simplest case cover the entire area of the image detector layer arrangement 6 on its two main surfaces.
  • a voltage drop across the electrodes 8, 9 is amplified by a voltage amplifier 10 whose output is connected to a control and data acquisition circuit 11.
  • an OLED matrix 12 is arranged, which consists of a plurality of individually controllable, matrix-like arranged OLEDs 13. Each of the OLEDs 13 is individually selectively controllable by the control and data acquisition circuit 11.
  • the OLED matrix 12 is formed on the surface of a substrate 14.
  • the electrodes can be 8, 9 running over the whole area on the 'two main surfaces of the image detector layer arrangement. 6
  • Electrodes 8, 9 in the manner shown in Fig. 2 are each by a plurality of parallel to each other extending, spaced apart and electrically isolated from each other electrode strips 8a, 8b; 9a
  • the electrode strips 8a, 8b, one electrode 8 are arranged perpendicular to the electrode strips 9a, 9b, the other electrode 9. Only those strip electrodes 8a, 8b, or
  • the image sensor can also be designed without a scintillator layer 5 if it is used for evaluating images in the visible wavelength range or if the sensitivity of the sensor to the detected X-radiation is high enough even without a scintillator layer.
  • the image detector layer arrangement can also be configured as a double P-i-N diode layer instead of as a P-i-N diode layer.
  • Any other laterally unstructured semiconductor layer arrangement is also possible, provided that it is suitable for storing a charge distribution corresponding to an image.
  • the laterally unstructured image detector layer is formed by a photodiode layer and in particular by a PiN. Diode layer or formed by a double PiN diode layer.
  • image storage plates or image storage films may also be considered as laterally unstructured image detector layers, in which charge carriers corresponding to the captured image are trapped in a charge storage layer, the charge carriers being readable by local exposure to the OLEDs of the OLED matrix.
  • the charge stored in the charge storage layer can be read out according to the principle of stimulating luminescence on the basis of the punctual light stimulation effected by the actuated OLEDs 13.
  • a measurement of the emitted light takes place.
  • the image detector layer as a charge storage layer, it is also possible to detect the charge stored in the charge storage layer by reading out a signal dropping across both sides of the charge storage layer, which corresponds to the charge carriers released by the punctual light stimulation.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Measurement Of Radiation (AREA)

Abstract

L'invention concerne un capteur d'image plan bon marché, convenant comme détecteur de rayons X de type image plate. Le capteur d'image selon l'invention comprend un ensemble de couches de détecteur d'image (6) qui comporte une couche de détecteur d'image (7) non structurée latéralement. Le capteur d'image selon l'invention comprend également une matrice de diodes électroluminescentes organiques (12) s'étendant sur l'ensemble de couches de détecteur d'image (6) et comprenant une multitude de diodes électroluminescentes organiques (13) pouvant être commandées à volonté et servant à la stimulation lumineuse ponctuelle de la couche de détecteur d'image (7).
PCT/EP2005/002871 2005-03-17 2005-03-17 Capteur d'image plan WO2006097129A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/EP2005/002871 WO2006097129A1 (fr) 2005-03-17 2005-03-17 Capteur d'image plan

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2005/002871 WO2006097129A1 (fr) 2005-03-17 2005-03-17 Capteur d'image plan

Publications (1)

Publication Number Publication Date
WO2006097129A1 true WO2006097129A1 (fr) 2006-09-21

Family

ID=36084853

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2005/002871 WO2006097129A1 (fr) 2005-03-17 2005-03-17 Capteur d'image plan

Country Status (1)

Country Link
WO (1) WO2006097129A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102012202200B3 (de) * 2012-02-14 2013-04-11 Siemens Aktiengesellschaft Röntgenstrahlungsdetektor und Verfahren zum Messen von Röntgenstrahlung
US10115000B2 (en) 2015-12-11 2018-10-30 Synaptics Incorporated Method and system for optical imaging using patterned illumination
CN112599701A (zh) * 2020-12-14 2021-04-02 合肥维信诺科技有限公司 显示基板

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4541015A (en) * 1983-02-15 1985-09-10 Sharp Kabushiki Kaisha Two-dimensional image readout device
US5196702A (en) * 1987-10-21 1993-03-23 Hitachi, Ltd. Photo-sensor and method for operating the same
JP2000208724A (ja) * 1999-01-14 2000-07-28 Casio Comput Co Ltd 記憶素子、その駆動方法及び記憶装置、並びに撮像装置
WO2004095067A1 (fr) * 2003-04-24 2004-11-04 Philips Intellectual Property & Standards Gmbh Element detecteur de rayons x

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4541015A (en) * 1983-02-15 1985-09-10 Sharp Kabushiki Kaisha Two-dimensional image readout device
US5196702A (en) * 1987-10-21 1993-03-23 Hitachi, Ltd. Photo-sensor and method for operating the same
JP2000208724A (ja) * 1999-01-14 2000-07-28 Casio Comput Co Ltd 記憶素子、その駆動方法及び記憶装置、並びに撮像装置
WO2004095067A1 (fr) * 2003-04-24 2004-11-04 Philips Intellectual Property & Standards Gmbh Element detecteur de rayons x

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 10 17 November 2000 (2000-11-17) *
VIEIRA M ET AL: "Optical confinement and colour separation in a double colour laser scanned photodiode (d/clsp)", TRANSDUCERS, SOLID-STATE SENSORS, ACTUATORS AND MICROSYSTEMS, 12TH INNATIONAL CONFERENCE ON, 2003, PISCATAWAY, NJ, USA,IEEE, vol. 2, 9 June 2003 (2003-06-09), pages 1602 - 1605, XP010647416, ISBN: 0-7803-7731-1 *

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102012202200B3 (de) * 2012-02-14 2013-04-11 Siemens Aktiengesellschaft Röntgenstrahlungsdetektor und Verfahren zum Messen von Röntgenstrahlung
US9557426B2 (en) 2012-02-14 2017-01-31 Siemens Aktiengesellschaft X-ray radiation detector and method for measuring X-ray radiation
US10115000B2 (en) 2015-12-11 2018-10-30 Synaptics Incorporated Method and system for optical imaging using patterned illumination
US10366268B2 (en) 2015-12-11 2019-07-30 Synaptics Incorporated Method and system for optical imaging using patterned illumination
CN112599701A (zh) * 2020-12-14 2021-04-02 合肥维信诺科技有限公司 显示基板
CN112599701B (zh) * 2020-12-14 2022-05-17 合肥维信诺科技有限公司 显示基板

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