WO2006091413B1 - Silicon gas injector and method of making - Google Patents

Silicon gas injector and method of making

Info

Publication number
WO2006091413B1
WO2006091413B1 PCT/US2006/004991 US2006004991W WO2006091413B1 WO 2006091413 B1 WO2006091413 B1 WO 2006091413B1 US 2006004991 W US2006004991 W US 2006004991W WO 2006091413 B1 WO2006091413 B1 WO 2006091413B1
Authority
WO
WIPO (PCT)
Prior art keywords
silicon
injector
shells
silica
adhesive
Prior art date
Application number
PCT/US2006/004991
Other languages
French (fr)
Other versions
WO2006091413A3 (en
WO2006091413A2 (en
Inventor
Ranaan Zehavi
Reese Reynolds
Original Assignee
Integrated Materials Inc
Ranaan Zehavi
Reese Reynolds
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Integrated Materials Inc, Ranaan Zehavi, Reese Reynolds filed Critical Integrated Materials Inc
Priority to JP2007557048A priority Critical patent/JP2008532283A/en
Priority to CN2006800048396A priority patent/CN101321890B/en
Publication of WO2006091413A2 publication Critical patent/WO2006091413A2/en
Publication of WO2006091413A3 publication Critical patent/WO2006091413A3/en
Publication of WO2006091413B1 publication Critical patent/WO2006091413B1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

A gas injector tube (40) usable in a batch thermal treatment oven including two silicon shells (54, 56) joined together with an adhesive formed of a fine silicon powder and a curable silica-forming agent, such as a spin-on glass, which is ultrasonically homogenized. The tube may have a gas outlet (52) on its distal end or be sealed with a silicon cap (86) and have side outlet holes (84) formed along its side. The silicon injector tube may be used in combination with a silicon tower and a silicon liner so that all bulk parts within the furnace hot zone are formed of silicon.

Claims

AMENDED CLAIMS received by the International Bureau on 03 September 2007CLAIMS
1. A silicon gas injector comprising an injector tube formed of two shells having respective grooves formed therein between respective faces and comprising substantially pure silicon, wherein the shells are bonded together at the faces with an adhesive formed of silicon powder and a silica-forming agent and the grooves forming a first central bore between the shells.
2. The injector of claim 1 , further comprising a second silicon tube assembly bonded to the two shells with an adhesive formed of silicon powder and a silica-form agent and including a supply tube extending perpendicularly to the injector tube and including a second central bore communicating with the first central bore.
3. The injector of claim 1, wherein the silicon powder has a size distribution with 99% of all particles having diameters of less than 75μm.
4. The injector of claim 3, wherein size distribution has 99% of all the particles having diameters of less than lOμm
5. The injector of claim 4, wherein the size distribution has 99% of all the particles having diameters of less than lOOnm.
6. The injector of claim 2, wherein the second silicon tube assembly includes the supply tube and an elbow formed as an integral unit.
7. The injector of claim 1, wherein the two shells are formed of virgin polysilicon.
8. The injector of any of claims 1 through 7, wherein the two shells comprise mating tongues and grooves at interfaces therebetween.
9. The injector of any of claims 1 through 7, wherein the two shells comprises mating steps at interfaces therebetween.
10. The injector of any of claims 1 through 7, wherein the two shells comprise mating stepped surfaces at interfaces therebetween.
11. The injector of any of claims 1 through 7, further comprising a cap sealed to an end of the bonded shells and further comprising at least one holes formed in an axially extending side of one of the shells and extending to a bore of the tube.
12. The injector of claim 11, wherein there are a plurality of the holes axially spaced along the axially extending side.
13. The injector of claim 12, wherein diameters of the holes or spacings between at least three of the holes vary along the axially extending side.
14. A method of assembling a gas injector, comprising the steps of: providing two shells including respective grooves and comprising substantially pure silicon, wherein the grooves form an axial bore between the shells when assembled together; applying an adhesive comprising silicon powder and a curable silica-forming agent to at least some mating faces of the two shells between which the grooves are fonned; assembling the two shells by juxtaposing respective mating faces of the two shells; and annealing the assembled shells at a temperature of at a temperature sufficient to glassify adhesive.
15. The method of claim 14, wherein the temperature is least 4000C.
16. The method of claim 15, wherein the temperature is between 850 and 10000C.
17. The method of claim 14, wherein the providing step includes:
14 machining the shells from at least one annealed virgin polysilicon member.
18. The method of claim 14, further comprising applying a powder-free wetting agent to at least some of the mating faces prior to applying the adhesive.
19. The method of claim 18, wherein the wetting agent comprises a curable silica- forming agent.
20. The method of any of claims 14 through 19, further comprising: mixture the silica-forming agent and the silicon powder into a mixture; and ultrasonically agitating the mixture to form the adhesive.
21. A method of bonding together two silicon parts, comprising the steps of: mixing together silicon powder and a silica- forming agent; ultrasonically agitating the mixture; applying the agitated mixture to at least one of two mating surface of two respective silicon members; and joining the silicon members along the two mating surfaces with the agitated mixture therebetween.
22. The method of claim 21, further comprising annealing the joined silicon members to thereby cure the silica-forming agent.
23. A method of thermally treating silicon wafers, comprising: supporting silicon production wafers on a silicon tower; disposing the silicon tower and the wafers supported thereupon in a furnace including a silicon liner surrounding the tower; and flowing a process gas through at least one silicon injector having an outlet disposed between the tower and the liner to treat the production wafers in a hot zone of the furnace within the liner; wherein all bulk portions of the tower, the liner, and the injector disposed within the
15 hot zone are substantially free of material other than silicon and excluding any lead-based adhesive for the injector.
24. The method of claim 23, wherein the injector comprises a tube formed of two substantially pure silicon shells bonded together with an adhesive formed of silicon powder and a silica-forming agent and forming a central axial bore therebetween.
16
PCT/US2006/004991 2005-02-23 2006-02-13 Silicon gas injector and method of making WO2006091413A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2007557048A JP2008532283A (en) 2005-02-23 2006-02-13 Silicon gas injector and method of manufacture
CN2006800048396A CN101321890B (en) 2005-02-23 2006-02-13 Silicon gas injector and method of making same

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US65548305P 2005-02-23 2005-02-23
US60/655,483 2005-02-23
US11/177,808 US20060185589A1 (en) 2005-02-23 2005-07-08 Silicon gas injector and method of making
US11/177,808 2005-07-08

Publications (3)

Publication Number Publication Date
WO2006091413A2 WO2006091413A2 (en) 2006-08-31
WO2006091413A3 WO2006091413A3 (en) 2007-10-04
WO2006091413B1 true WO2006091413B1 (en) 2007-11-22

Family

ID=36911278

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/004991 WO2006091413A2 (en) 2005-02-23 2006-02-13 Silicon gas injector and method of making

Country Status (6)

Country Link
US (1) US20060185589A1 (en)
JP (1) JP2008532283A (en)
KR (1) KR20070107751A (en)
CN (1) CN101321890B (en)
TW (1) TW200702473A (en)
WO (1) WO2006091413A2 (en)

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US20060185589A1 (en) 2006-08-24
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KR20070107751A (en) 2007-11-07
WO2006091413A2 (en) 2006-08-31

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