JP2000286244A - Joint structure for constituting member and method therefor, and member for semiconductor manufacturing apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To facilitate countermeasures to increase of scaling of members for a semiconductor manufacturing device or producing facilities accompanied by the enlarging of the diameter of a wafer, and to rationally and inexpensively manufacture the device or the constituting members, are to attain improvement in yield and simplification of the constitution and the improvement of quality, and to reduce generation of dust and wafer contamination. SOLUTION: Two constituting members 2 and 4, whose thermal expansion ratios are different are jointed through a joining member 3 arranged between them. First and second joint pieces whose quality is the same or almost the same as each constituting member 2 and 4 are arranged at both sides, and an intermediate member 9 is arranged between these first and second joint pieces 7 and 8, so that the joint member 3 can be constituted integrally. The intermediate member 9 is constituted of composition components whose quality is the same or almost the same as the first and second joint pieces 7 and 8, and the ratio of the composition components is continuously or changed stepwise in the directions of the joint pieces 7 and 8.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention is suitable for a member for a semiconductor manufacturing apparatus such as an electrode for plasma etching and a wafer supporting apparatus, and the members for the semiconductor manufacturing apparatus and the production equipment etc. are enlarged as the diameter of the wafer is increased. In addition to being able to manufacture these devices and components rationally and inexpensively, it has been possible to improve the yield, simplify the configuration and quality, and achieve low dust and reduced wafer contamination. The present invention relates to a joining structure of components, a joining method thereof, and a member for a semiconductor manufacturing apparatus.

[0002]

2. Description of the Related Art In recent semiconductor manufacturing, wafers have become larger in diameter in response to demands for chip cost reduction, and manufacturing equipment, manufacturing processes, production lines, production facilities, and the like related to semiconductor manufacturing have been required to cope with the larger diameter. Has been requested.

For example, a plasma etching electrode used in a wafer etching process is disclosed in Japanese Patent Publication No. 7-4056.
No. 7, as disclosed in Japanese Unexamined Patent Publication No. 7 (1999), a relatively thick disk is formed of single-crystal silicon, and one peripheral surface is chamfered.
The flat plate surface is laser-processed to form a large number of processing gas through holes. The electrode is attached to the plasma reactor via a separate holding ring, and a wafer is disposed directly below the electrode with a gap therebetween, and the wafer is held by a holder.

[0004] Therefore, in the conventional plasma etching electrode, it is unreasonable to separately manufacture the electrode and the holding ring, and when the diameter of the wafer is increased, a gap is likely to be formed at the joint between the electrode and the holding ring. There is a concern about dust generation. Moreover, since the electrode is made of expensive single-crystal silicon except for the vicinity of the processing gas through-hole, there is a problem that the manufacturing cost increases. In this case, if the vicinity of the processing gas through-hole and the other part are integrally formed of two members, that is, single crystal silicon and other members, it is possible to achieve low cost and low dust. The technique cannot be achieved due to the problem of thermal stress due to the difference in thermal expansion coefficient between the two members.

On the other hand, a wafer supporting device used in a wafer diffusion process is, for example, a pair of fixed plates arranged vertically opposed to each other and a plurality of fixed plates connecting these fixed plates as disclosed in Japanese Patent Application Laid-Open No. 4-188617. A holding rod is formed, and a plurality of holding grooves capable of locking the wafer are formed on the inner surface of the rod. However, this conventional wafer support apparatus has a problem that it is expensive because the fixing plate and the holding rod are made of an expensive silicon material.

Therefore, when the holding rod is made of a silicon material and the fixing plate is made of a quartz glass plate as disclosed in, for example, Japanese Utility Model Publication No. Sho 62-34439, the difference in thermal expansion coefficient between silicon and quartz glass is large. There is a problem that a crack is generated or broken at a fitting portion between the fixing plate and the holding rod due to thermal stress, and particles are generated.

[0007]

The present invention solves such a problem and is suitable for a semiconductor manufacturing apparatus including components such as a plasma etching electrode and a wafer supporting apparatus.
In response to the increase in size of semiconductor manufacturing equipment and production equipment due to the increase in wafer diameter, it is possible to manufacture such equipment and components in a reasonable and inexpensive manner, while improving yield, simplifying the configuration, and improving quality. It is an object of the present invention to provide a joining structure of constituent members, a joining method thereof, and a member for a semiconductor manufacturing apparatus, which can realize low dust and reduction of wafer contamination.

[0008]

SUMMARY OF THE INVENTION Accordingly, the invention of claim 1 is directed to a joining structure of components for joining two components having different coefficients of thermal expansion via a joining member disposed therebetween. A first and a second joining piece of the same or substantially the same quality as the respective constituent members are arranged on both sides, and an intermediate member is arranged between the first and the second joining pieces to integrally constitute the joining member. The intermediate member is composed of the same or substantially the same composition as the first and second joining pieces, and the ratio of the composition is continuously or stepwise changed in the direction of the joining piece to form the joining member. And the thermal stress due to the difference in the coefficient of thermal expansion between the constituent members is absorbed and reduced by the joining member.
It is possible to prevent cracks and cracks in the constituent members at a temperature of about ° C., thereby improving the quality and reliability of bonding.

According to a second aspect of the present invention, the composition of the intermediate member is gradually increased in the direction of the corresponding first or second joining piece, and the difference in the coefficient of thermal expansion between the components and the thermal stress are gradually reduced to reduce the thermal stress. Absorbs gently and provides a stable joint structure. Claim 3
The invention is characterized in that the joining member is formed by sintering with a powder having the same or substantially the same composition as the two constituent members, and, for example, by molding this in an electric furnace, compared with the conventional CVD method or thermal spraying method. This makes it easy to manufacture large-sized joining members, for example, it is possible to cope with an increase in the size of semiconductor manufacturing equipment members and production equipment associated with an increase in the diameter of semiconductor wafers, and the manufacturing process can be performed with relatively inexpensive equipment. Can be simplified. According to a fourth aspect of the present invention, the first and second joining pieces are directly joined or welded to corresponding components, and such joining is made possible by the thermal stress absorbing action of the joining member. It is possible to join easily and quickly without the need for processing of the joining portion as described above.

According to a fifth aspect of the present invention, the one member is made of single-crystal silicon, the other member is made of quartz glass, and the first joining piece is made of polycrystalline or single-crystal silicon. In addition, the second bonding piece is made of quartz glass, so that the amount of expensive single crystal silicon used can be reduced, the yield can be improved and a low-cost bonding structure can be obtained. A stable bonding structure between crystalline silicon and quartz glass can be obtained. According to a sixth aspect of the present invention, there is provided a method for joining two constituent members having different coefficients of thermal expansion via a joining member disposed therebetween, wherein the first and second constituent members have the same or substantially the same quality. The first and second joining pieces are arranged on both sides, and an intermediate member is arranged between the first and second joining pieces to be integrally formed, and the intermediate member is the same as the first and second joining pieces or It is composed of substantially the same composition components, and the ratio of the composition components is changed continuously or stepwise in the direction of the joining piece to simplify the configuration of the joining members, and the difference in the coefficient of thermal expansion between the components. The thermal stress is absorbed and relaxed by the joining member, thereby preventing the occurrence of cracks and cracks in the constituent members at a temperature of, for example, from room temperature to about 700 ° C., thereby improving joining quality and reliability.

According to a seventh aspect of the present invention, the composition of the intermediate member is gradually increased in the direction of the corresponding first or second joint piece, and the difference in the coefficient of thermal expansion between the constituent members and the thermal stress are gradually reduced to reduce the thermal stress. Absorbs gently and stabilizes bonding. The invention according to claim 8 is characterized in that the joining member is formed by sintering with a powder having the same or substantially the same composition as the two constituent members and, for example, by molding this in an electric furnace, the conventional CVD method or thermal spraying method. As compared with the above, the production of a large-sized joining member is facilitated, and for example, it is possible to cope with the enlargement of a member for a semiconductor manufacturing apparatus or a production facility accompanying the enlargement of the diameter of a semiconductor wafer, and at a relatively inexpensive facility. The manufacturing process can also be simplified. According to a ninth aspect of the present invention, the first and second joining pieces are directly heat-pressed or welded to the corresponding components, and such joining is enabled by the thermal stress absorbing action of the joining members,
The joining can be easily and quickly performed without the need for processing of the joining portion as in the related art.

According to a tenth aspect of the present invention, the one constituent member is made of single crystal silicon, the other constituent member is made of quartz glass, and the first joining piece is made of polycrystalline or single crystal silicon. The second joining piece is made of quartz glass to reduce the amount of expensive single crystal silicon,
An improved yield and an inexpensive bonding structure can be obtained, and a stable bonding between single crystal or polycrystalline silicon and quartz glass having different coefficients of thermal expansion can be obtained. According to an eleventh aspect of the present invention, the joining surface of the component and the joining surface of the joining member are formed as mirror-like tapered surfaces, and the component and the joining member are fitted through these joining surfaces. Pressing and fixing under heating,
The press-fitting of the component member and the joining member is promoted, and this can be performed smoothly and reliably.

According to a twelfth aspect of the present invention, in a member for a semiconductor manufacturing apparatus in which a component member made of single-crystal silicon and a component member made of quartz glass are connected, first and second members having the same or substantially the same quality as the respective components are provided. Two joint pieces are arranged on both sides, an intermediate member is arranged between the first and second joint pieces to provide an integrally formed joint member, and the joint member is arranged and connected between the constituent members. In addition, the intermediate member is composed of the same or substantially the same composition as the first and second joining pieces, and the ratio of the composition is changed continuously or stepwise in the direction of the joining piece. Compared to the case where the second bonding piece and the intermediate member are separately provided, the number of parts is reduced, the structure of the bonding member can be simplified, and the generation of gaps is prevented, thereby reducing dust and reducing wafer contamination. I do. In addition, the thermal stress caused by the difference in the coefficient of thermal expansion between the constituent members is absorbed and relaxed by the joining member.
It prevents cracks and cracks in components at a temperature of about 0 ° C., and promotes reduction of dust and reduction of wafer contamination.

According to a thirteenth aspect of the present invention, the composition of the intermediate member is gradually increased in the direction of the corresponding first or second joining piece, and the difference in the coefficient of thermal expansion between the constituent members and the thermal stress are gradually reduced to reduce the thermal stress. It absorbs gently and prevents cracks and cracks in the components, thereby realizing low dust and reduced wafer contamination. The invention according to claim 14, wherein the joining member is formed by sintering with a powder having the same or substantially the same composition as the two constituent members,
For example, by molding this in an electric furnace, the conventional CV
Compared to those manufactured by the D method or thermal spraying method, it is easier to manufacture large joining members. For example, it is possible to cope with the increase in the size of semiconductor manufacturing equipment members and production equipment as semiconductor wafers become larger in diameter. The invention according to claim 15, which is capable of simplifying the manufacturing process with relatively inexpensive equipment, directly joins or welds the first and second joint pieces to corresponding components, and performs such joint as described above. In addition to this, the joint member can be easily and quickly joined by eliminating the processing of the joint portion as in the related art.

According to a sixteenth aspect of the present invention, the first joint piece is made of polycrystalline or single-crystal silicon, and the second joint piece is made of quartz glass, and the amount of expensive single-crystal silicon used is reduced. It is possible to improve the yield and reduce the production cost of the members for semiconductor manufacturing equipment or the manufacturing equipment, and obtain a stable bond between single crystal or polycrystalline silicon having different coefficients of thermal expansion and quartz glass, and crack or crack them. , And reduction of dust and reduction of wafer contamination can be achieved.
According to a seventeenth aspect of the present invention, the member for a semiconductor manufacturing apparatus is an electrode for plasma etching or a wafer supporting apparatus, which can reduce the amount of expensive single-crystal silicon used, improve the yield and reduce the manufacturing cost, and reduce cracks. Cracks and particles are prevented.

[0016]

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a perspective view of a semiconductor manufacturing apparatus according to an embodiment of the present invention applied to a plasma etching electrode attached to a plasma etching apparatus. FIG.
mm, a disk-shaped electrode for plasma etching having a thickness of 10 mm.
, A ring-shaped joining member 3, and an electrode plate 4, which is a constituent member of the electrode 1, which are integrally formed by pressing at a high temperature.

The outer peripheral ring 2 is made of quartz glass, which is formed by forming quartz glass into a hollow disk shape as shown in FIGS. 3 and 4, and through which a through hole 5 in which the joining member 3 can be fitted. Is formed. The inner peripheral surface 5a of the through hole 5 is formed in a tapered surface shape whose diameter increases upward, the smaller diameter inner diameter is formed to be substantially the same diameter as a through hole described later, and the taper angle is formed to approximately 60 °. The inner peripheral surface 5a is polished to a mirror surface.

The joining member 3 is formed in a tapered ring shape as shown in FIG. 5, and the outer diameter on the large diameter side is formed slightly larger than the large diameter side of the through hole 5. The outer peripheral surface 3a of the joining member 3 is formed in a tapered surface shape whose diameter increases upward, the taper angle is formed to be approximately 60 °, and the outer peripheral surface 3a is polished to a mirror surface.

A through hole 6 into which the electrode plate 4 can be fitted is formed inside the joining member 3, and an inner peripheral surface 6a of the hole 6 is formed in a tapered shape whose diameter increases upward, and its taper angle is set. Is about 6
The inner peripheral surface 6a is mirror-polished.

As shown in FIGS. 5 and 6, the joining member 3 is a quartz glass ring-shaped first joining piece 7 disposed on the outer peripheral side.
And a ring-shaped second bonding piece 8 made of polycrystalline silicon disposed on the inner peripheral side, and an intermediate member 9 disposed therebetween. These first and second joining pieces 7,
8 and the intermediate member 9 are mixed with powder of single crystal silicon or quartz glass of several μm level composed of the same or substantially the same components at an arbitrary ratio, and then mixed at 1300 ° C. to 2 ° C.
Hot pressing (H
P), hot isostatic pressing (HIP), pressure plasma sintering (SPS) and other pressure sintering methods, sintering and molding into a hollow disk shape, and after molding, tapering the inner and outer peripheral surfaces of the imaginary line shown in the figure It is cut into a plane and polished into a mirror.

That is, the first joining piece 7 is made of 100% quartz glass, the second joining piece 8 is made of 100% polycrystalline silicon, and these joining pieces 7 and 8 have substantially the same trapezoidal cross section. Is formed. Further, the intermediate member 9 gradually changes the mixing ratio of the single crystal silicon powder and the quartz glass powder inward and outward at an arbitrary ratio, and moves the single crystal silicon or quartz glass toward the first bonding piece 7 or the second bonding piece 8. The mixing ratio is increased or decreased so that the first bonding piece 7 is set to 100% quartz glass and the second bonding piece 8 is set to 100% polycrystalline silicon, and the cross-sectional shape is formed into a vertically long rectangle.

In the embodiment, as a means for defining the mixing ratio of the single crystal silicon and the quartz glass, the inside and outside directions of the intermediate member 9 are partitioned by a plurality of slice pieces 10, and these slice pieces 10 are superposed and joined. At the same time, the weight ratio of single crystal silicon and quartz glass in each slice piece 10 is
For example, from the inside to the outside, 9: 1, 8: 2, 6:
4, 4: 6, 2: 8, and 1: 9. In this case, the mixing ratio of the single crystal silicon and the quartz glass may be changed in a stepwise manner. By doing so, the number of sections of the intermediate member 9 is reduced, and the time required for powder molding is reduced.

As shown in FIGS. 7 and 8, the electrode plate 3 is formed into a truncated conical plate using single crystal silicon, and its outer diameter is slightly larger than the larger diameter of the through hole 6. A large number of through-holes 11 are formed in the entire area of the plate surface.
The outer peripheral surface 4a of the electrode plate 4 is formed in a tapered surface shape whose diameter increases upward, the taper angle is formed to be approximately 60 °, and the outer peripheral surface 4a is polished to a mirror surface.

In addition, reference numeral 12 in the figure denotes a disc-shaped jig made of quartz glass, which is vertically movable in an electric furnace (not shown) which can be heated to 1000 ° C. to 1300 ° C. Can be pressed. Reference numeral 13 denotes a jig made of quartz glass, which is installed at a fixed position in the electric furnace below the jig 12 so that the outer peripheral ring 2 can be mounted on the upper surface thereof. A large diameter through hole 14 is formed in the jig 13, and the small diameter side peripheral surface of the joining member 3 can be received in the hole 14.

When manufacturing the electrode for plasma etching constituted as described above, the outer peripheral ring 2 and the joining member 3 are previously prepared.
And the electrode plate 4 are manufactured and placed in the shape and dimensions before joining. That is, the outer peripheral ring 2 is formed into a hollow disk shape with quartz glass, and the inner peripheral surface 5a of the through hole 5 is formed in a tapered surface shape that expands upward, and the inner peripheral surface 5a is polished into a mirror surface. And put. This situation is as shown in FIGS.

The joining member 3 is prepared by preparing powder of single-crystal silicon and quartz glass having a level of several μm, arranging powder of 100% quartz glass in a ring shape having a predetermined width, and placing 100% of single-crystal silicon inside the ring. Is shaped and arranged in a ring shape having substantially the same width as the quartz glass powder.

And, between these inner and outer powder rings,
A plurality of types of mixed powder rings obtained by mixing single-crystal silicon and quartz glass powder in an arbitrary ratio are arranged concentrically. In the embodiment, the weight ratio of the single crystal silicon powder to the quartz glass powder is 9: 1, 8: 2, 6: 4, 4: 6,
Six kinds of mixed powders of 2: 8 and 1: 9 are produced, these are arranged concentrically from the inside to the outside, and the polycrystalline silicon 1 is attached to the second bonding piece 8 adjacent to the innermost mixed powder.
00%, and the first joining piece 7 adjacent to the outermost mixed powder
Is 100% quartz glass.

Then, the above-mentioned powder ring is carried into an electric furnace and sintered at a high temperature of 1300 ° C. to 2000 ° C. and under a predetermined pressure to form a hollow disk slightly thicker than the outer peripheral ring 2. After the molding, the inner and outer peripheral surfaces are cut into a tapered surface and polished into a mirror surface.

As described above, since the joining member 3 is formed by sintering using an electric furnace, a large-sized molded product can be formed easily and promptly as compared with a case where, for example, a CVD method or a thermal spraying method is applied. It has the advantages that it can be manufactured and can easily cope with an increase in the size of a semiconductor manufacturing apparatus accompanying the increase in the diameter of a wafer, has relatively low equipment costs, has a simple manufacturing process, and can be manufactured at low cost.

As shown in FIGS. 5 and 6, the joining member 3 thus manufactured is formed in a tapered ring shape having a thickness greater than that of the outer peripheral ring 2 and includes first joining pieces 7 and 10 made of 100% quartz glass.
A second joining piece 8 made of 0% polycrystalline silicon, and an intermediate member 9 located therebetween; the intermediate member 9 gradually increases the content of quartz glass toward the first joining piece 7; Six slice pieces 1 in which the content of single crystal silicon gradually decreases
It has 0.

As described above, the joining member 3 is formed by connecting the first joining piece 7 and the second joining piece 8 having greatly different coefficients of thermal expansion to the intermediate member 9.
And avoid their direct joining. Incidentally, the thermal expansion coefficient of single crystal silicon is 0.00
00003 × (1 / K), the thermal expansion coefficient of quartz glass is
0.000000055 × (1 / K). Therefore, the intermediate member 9 absorbs the thermal stress during heating and cooling accompanying the direct joining of the first and second joining pieces 7 and 8, thereby preventing the occurrence of cracks and cracks and improving the quality of the joining member 3. Stabilization and improvement of productivity can be achieved.

In this case, if the mixing ratio of single crystal silicon and quartz glass in the intermediate member 9 changes continuously as in the embodiment, the coefficient of thermal expansion changes continuously, and the thermal stress is gradually absorbed.

On the other hand, the electrode plate 4 is made of single-crystal silicon and formed in a frustoconical plate thicker than the joining member 3, and the outer diameter of the large diameter side is made slightly larger than the large diameter side of the through hole 6. Then, the outer peripheral surface 4a is polished to a mirror surface, and a large number of through holes 11 are formed in the entire area of the plate surface. This situation is shown in FIGS.
It is like. As described above, the entire area of the electrode plate 4 is occupied by the through holes 11, and the single crystal silicon is effectively and rationally used. Therefore, the single crystal silicon can be manufactured at low cost and the yield is improved.

The outer ring 2 thus produced, the joining member 3 and the electrode plate 4 are sequentially lightly fitted and stacked, and jigs 13 and 12 are arranged above and below them. That is, the outer ring 2 is placed on the jig 13, the joining member 3 is lightly fitted into the through hole 5 of the ring 2, and the electrode plate 4 is lightly fitted into the through hole 6 of the member 3. Then, the jig 12 is placed on the electrode plate 4, and the jig 12 is kept in this state and is carried into the electric furnace.

The electric furnace is set at a heating rate of 30 ° C./min and the furnace temperature is set to a predetermined temperature between 1000 ° C. and 1300 ° C. In this state, the jig 12 is pushed down, and the inner and outer surfaces 3a to be the respective joining surfaces are set. , 5a and 4a, 6a for 0.5 to 4.0.
A pressure of kg / cm @ 2 is applied, and the pressed state is maintained for a certain time.

In this way, the outer ring 2, the joining member 3, and the electrode plate 4 are heated to promote their fitting and press-fitting. In this case, the thermal stress between the first and second joining pieces 7 and 8 of the joining member 3 is gradually absorbed by the intermediate member 9 which is a transition portion of the coefficient of thermal expansion, thereby preventing the generation of cracks and cracks. .

After the elapse of the time, when the outer ring 2, the joining member 3, and the electrode plate 4 are sufficiently fitted and joined, the pressing by the jig 12 is released, and the cooling in the furnace is started. In the embodiment, the cooling rate was controlled to obtain a stable product. Even during this cooling, the thermal stress between the first and second joining pieces 7 and 8 of the joining member 3 is gradually absorbed by the intermediate member 9 which is a transition portion of the coefficient of thermal expansion, and the generation of cracks and cracks thereof occurs. To prevent

After cooling, the outer ring 2, the joining member 3 and the electrode plate 4 are joined together in a kind of shrink fit. This situation is as shown in FIG. Incidentally, when the inventor measured the bonding strength of each bonding surface between the electrode plate 4 and the second bonding piece 8 and the bonding surface between the outer peripheral ring 2 and the first bonding piece, that is, the breaking strength, the breaking strength of single crystal silicon or quartz glass alone was measured. Approximately, and it was confirmed that the bonding method had the same strength as existing products. This is because a wide bonding area and close contact were obtained by forming each bonding surface in a tapered shape and mirror-finish the surfaces.

Thereafter, the upper and lower surfaces of the joined product were ground, the projections and recesses were removed, and the flatness and parallelism were processed to obtain the electrodes for plasma etching shown in FIGS.

The electrode for plasma etching manufactured in this way is constituted integrally with the electrode plate 4 in which the through hole 11 for introducing the etching gas is formed and the outer peripheral ring 2 to which the electrode plate 4 is attached. The number of parts is smaller than that of the conventional structure, and the structure can be simplified. When the structure is attached to the plasma etching apparatus, a gap is formed between the electrode plate 4 and the outer ring 2 as in the related art. Therefore, dust due to the gap is reduced, and contamination of the wafer is prevented.

Also, since only the electrode plate 4 in which the through holes 11 for introducing the etching gas are formed is made of single crystal silicon,
Compared with a conventional electrode in which the entire electrode is made of single-crystal silicon, the amount of expensive single-crystal silicon used can be reduced, and this can be manufactured at low cost, and the yield can be improved.

The intermediate member 9 is composed of the same or substantially the same composition as the first and second joining pieces 7 and 8, and the ratio of the composition is continuously or stepwise in the direction of the joining pieces 7 and 8. The thermal stress caused by the difference in the coefficient of thermal expansion between the constituent members 2 and 4 is absorbed and relaxed by the intermediate member 9, for example, cracks of the constituent members 2 and 4 at a temperature from normal temperature to about 700 ° C. The occurrence of cracks can be prevented, and the quality of joining and the reliability can be improved.

FIGS. 11 to 13 show another embodiment of the present invention, in which the same reference numerals are used for components corresponding to those of the above-described embodiment. In this embodiment, the present invention is applied to a vertical wafer support device 15 as a member for a semiconductor manufacturing apparatus instead of a plasma etching electrode.

The wafer support device 15 is composed of quartz glass disk-shaped fixing plates 16 and 17 which are components vertically separated from each other, and single crystal silicon which is a component standing upright between them. And three joining rods 3 disposed between the upper and lower ends of the rod 18 and the fixing plates 16 and 17. The wafer 19 is hooked on the inner surface of the supporting rod 18. A plurality of possible locking grooves 20 are formed.

The joining member 3 is formed in the shape of a rectangular plate having the same shape as the cross section of the support rod 18. The first joining piece 7 is made of quartz glass and disposed at both upper and lower ends as shown in FIGS. Second bonding piece 8 made of single crystal or polycrystalline silicon
And an intermediate member 9 disposed therebetween.

The intermediate member 9 is composed of a single crystal silicon or polycrystalline silicon powder having an average particle size of several μm,
m of quartz glass powder, and these powders are mixed at an arbitrary ratio inward and outward directions, and the mixing ratio of single crystal silicon or quartz glass is increased or decreased in the first or second joint pieces 7 and 8 directions. The joint piece is set to 100% quartz glass, and the second joint piece 8 is set to 100% polycrystalline silicon.

In the embodiment, the intermediate member 9 is divided into a plurality of slices 10 in the thickness direction, and these slices 10 are stacked and joined as means for defining the mixing ratio of the single crystal silicon and quartz glass. With each slice 1
The weight ratio of single crystal silicon to quartz glass at 0
For example, from the second joining member 7 to the first joining member 8 9:
1, 8: 2, 7: 3, 5: 5, 6: 4, 4: 6, 3:
7, 2: 8, 1: 9.

In this case, the mixing ratio of the single crystal silicon and the quartz glass of the intermediate member 9 may be changed in a stepwise manner, whereby the number of sections of the intermediate member 9 is reduced, and The hassle is reduced.

When assembling the wafer support device 15, fixing plates 16 and 17, a support rod 18, and a joining member 3 cut into a sectional shape of the support rod 18 are prepared and joined to both end surfaces of the support rod 18. The end faces of the second joining pieces 8 of the member 3 are polished, heated to 1000 ° C. to 1200 ° C., and bonded directly by pressure bonding at about 1 kgf / cm 2.

After the above-mentioned joining, the joining portion is polished to eliminate a step, and a concave portion where an adhered substance is apt to remain is removed. Next, the end face of the first joining piece 7 of the joining member 3 is polished, and this is fixed to the fixing plate 17.
And a groove 20 is formed in the inner surface of the support rod 18.

The wafer supporting device 15 thus assembled
Since the fixing plates 16 and 17 having significantly different coefficients of thermal expansion and the support rods 18 are directly joined via the joining member 3, the support rods are fitted and fixed to the fixing plates as in the conventional device. Cracks and particles are prevented from being generated in the fitting portion, and complicated processing of the fitting hole and the fitting projection is not required.

The joining member 3 has one end portion of the support rod 1.
8 made of polycrystalline silicon having the same quality as that of FIG.
6 and 17, and the intermediate member 9 having a coefficient of thermal expansion transition is arranged between them.
Absorbs and relaxes thermal stress during heating and cooling associated with the direct joining of the first and second joint pieces 7, 8 to the joints 6, 17, preventing cracks and cracks at the joints, Cracks and particles are prevented, and the quality of the wafer support device 15 can be stabilized and the productivity can be improved.

Further, the wafer support device 15 is provided with the support rod 1
8 is made of single crystal silicon, and the fixing plates 16 and 17 are made of quartz glass, and the amount of expensive single crystal silicon used is reduced, so that the manufacturing cost can be reduced accordingly.

In each of the above embodiments, the present invention is applied to a plasma etching electrode 1 which is a member for a semiconductor manufacturing apparatus.
Or the wafer support device 15, but is not limited to this example, and other members for a semiconductor manufacturing device or a semiconductor manufacturing device,
In other manufacturing apparatuses, it can be widely applied to a joining method or a joining structure of two members having different coefficients of thermal expansion.

[0055]

According to the first aspect of the present invention, the first and second joining pieces of the same or substantially the same quality as the respective constituent members are arranged on both sides,
An intermediate member is arranged between the first and second joint pieces to integrally form the joint member, and the intermediate member is formed of the same or substantially the same composition as the first and second joint pieces. And, since the ratio of the composition component is changed continuously or stepwise in the direction of the joining piece, the number of parts of the joining member is reduced, the structure is simplified, and the heat due to the difference in the coefficient of thermal expansion between the constituent members is reduced. Absorbing and relaxing the stress by the joining member, for example, by preventing cracks and cracks of the component members at a temperature of about room temperature to about 700 ° C,
It is possible to improve the quality and reliability of bonding. According to the second aspect of the present invention, since the composition of the intermediate member is gradually increased in the corresponding first or second joining piece direction, the difference in the coefficient of thermal expansion between the constituent members and the thermal stress are gradually reduced to gradually reduce the thermal stress. Absorbing and a stable bonding structure can be obtained.

According to a third aspect of the present invention, since the joining member is formed by sintering with a powder having the same or substantially the same composition as those of the two constituent members, for example, by molding this in an electric furnace, the conventional CVD method is performed. It is easier to manufacture large-sized joining members as compared with the spraying method and the thermal spraying method. The invention according to claim 4 has the advantage that the manufacturing process can be simplified with inexpensive equipment, because the first and second joining pieces are directly joined or welded to the corresponding components, and this joining is performed by the joining member described above. And the joint can be easily and quickly joined without the need for complicated processing of the joining portion as in the related art.

According to a fifth aspect of the present invention, the one constituent member is made of single crystal silicon, the other constituent member is made of quartz glass, and the first joining piece is made of polycrystalline or single crystal silicon. In addition, since the second bonding piece is made of quartz glass, the amount of expensive single crystal silicon used can be reduced, the yield can be improved, and a low-cost bonding structure can be obtained. There is an effect that a stable bonding structure between crystalline silicon and quartz glass can be obtained. According to a sixth aspect of the present invention, the first and second joining pieces of the same or substantially the same quality as those of the constituent members are arranged on both sides, and an intermediate member is arranged between the first and second joining pieces to be integrally formed. In addition, the intermediate member is composed of the same or substantially the same composition as the first and second joining pieces, and the ratio of the composition is changed continuously or stepwise in the joining piece direction. In addition to reducing the number of parts, simplifying the configuration, the joining member absorbs and reduces the thermal stress caused by the difference in the coefficient of thermal expansion between the constituent members.
Cracks and cracks of the constituent members at a temperature of about 00 ° C. can be prevented from occurring, and the quality of the joint and the reliability can be improved.

According to a seventh aspect of the present invention, since the composition of the intermediate member is gradually increased in the direction of the corresponding first or second joint piece, the difference in the coefficient of thermal expansion between the constituent members and the thermal stress are gradually reduced to thereby reduce the thermal stress. Can be gradually absorbed to stabilize the bonding. According to the invention of claim 8, since the joining member is formed by sintering with a powder having the same or substantially the same composition as the two constituent members, for example, by molding this in an electric furnace,
Compared to the conventional CVD method and thermal spraying method, it is easy to manufacture a large-sized joining member, for example, and it is possible to cope with an increase in the size of a member for a semiconductor manufacturing apparatus or a production facility due to an increase in the diameter of a semiconductor wafer. According to the invention of claim 9, there is an advantage that the manufacturing process can be simplified with relatively inexpensive equipment, and the first and second joint pieces are directly heat-pressed or welded to the corresponding components, so that this joint is This is realized by the thermal stress absorbing action of the above-described joining member, and the joining can be easily and quickly performed without requiring complicated processing of the joining portion as in the related art.

According to a tenth aspect of the present invention, the one constituent member is made of single crystal silicon, the other constituent member is made of quartz glass, and the first joining piece is made of polycrystalline or single crystal silicon. Since the second joint piece is made of quartz glass, the amount of expensive single-crystal silicon used can be reduced, the yield can be improved and an inexpensive joint structure can be obtained, and a single crystal or polycrystal having a different coefficient of thermal expansion can be obtained. There is an effect that stable bonding between silicon and quartz glass can be obtained. Claim 1
According to a first aspect of the present invention, the joining surface of the constituent member and the joining surface of the joining member are formed as mirror-like tapered surfaces, and the constituent member and the joining member are fitted through these joining surfaces, and these are heated under heating. , Press-fitting of the component member and the joining member is promoted, and this can be performed smoothly and reliably.

According to a twelfth aspect of the present invention, the first and second joining pieces of the same or substantially the same quality as those of the constituent members are arranged on both sides,
An intermediate member is arranged between the first and second joint pieces to form an integrally formed joint member. The joint member is arranged and connected between the constituent members, and the intermediate member is connected to the first member. And the second joint piece is composed of the same or substantially the same compositional component as that of the second joint piece, and the ratio of the composition component is continuously or stepwise changed in the direction of the joint piece. Compared to a separately installed one, the number of parts is reduced and the structure of the joining member can be simplified,
The generation of gaps can be prevented, and low dust and reduced wafer contamination can be realized. In addition, since the thermal stress due to the difference in the coefficient of thermal expansion between the constituent members can be absorbed and reduced by the joining member, for example, cracks and cracks of the constituent members at a temperature from normal temperature to about 700 ° C. can be prevented, and the dust can be reduced. And the reduction of wafer contamination can be enhanced. Claim 1
According to the invention of the third aspect, since the composition of the intermediate member is gradually increased in the corresponding first or second joining piece direction, the difference in the coefficient of thermal expansion between the constituent members and the thermal stress are gradually reduced to absorb the thermal stress gradually. In addition, it is possible to prevent the occurrence of cracks and cracks in the constituent members, thereby realizing a reduction in dust and a reduction in wafer contamination.

According to a fourteenth aspect of the present invention, since the joining member is formed by sintering with a powder having the same or substantially the same composition as the two constituent members, for example, by molding this in an electric furnace, the conventional CVD method is performed. It is easier to manufacture a large-sized joining member than that manufactured by a method or a thermal spraying method. For example, it is possible to cope with an increase in the size of a member for a semiconductor manufacturing apparatus or a production facility associated with an increase in the diameter of a semiconductor wafer. In addition, there is an advantage that the manufacturing process can be simplified with relatively inexpensive equipment. According to a fifteenth aspect of the present invention, since the first and second joining pieces are directly joined or welded to the corresponding components, the joining is enabled by the thermal stress absorbing action of the joining member, and the conventional technique is used. Complex processing of such a joint can be omitted, and the joint can be easily and quickly performed.

According to a sixteenth aspect of the present invention, since the first joint piece is made of polycrystalline or single crystal silicon and the second joint piece is made of quartz glass, the amount of expensive single crystal silicon used can be reduced. In addition to improving the yield and reducing the manufacturing cost of semiconductor manufacturing equipment members, stable bonding between single crystal or polycrystalline silicon and quartz glass having different coefficients of thermal expansion can be obtained, and the occurrence of cracks and cracks Thus, dust can be reduced and wafer contamination can be reduced. According to the invention of claim 17, since the member for the semiconductor manufacturing apparatus is a plasma etching electrode or a wafer supporting apparatus, the amount of expensive single crystal silicon used can be reduced, and the yield can be improved and the manufacturing cost can be reduced. Cracks and cracks can be prevented by the joining member, and generation of particles can be prevented.

[Brief description of the drawings]

FIG. 1 is a perspective view showing an embodiment in which the present invention is applied to a plasma etching electrode.

FIG. 2 is an enlarged sectional view taken along the line AA of FIG.

FIG. 3 is a perspective view of an outer peripheral ring which is a constituent member applied to the electrode for plasma etching of FIG. 1;

FIG. 4 is an enlarged sectional view taken along line BB of FIG. 3;

FIG. 5 is a perspective view showing a bonding member applied to the electrode for plasma etching of FIG. 1;

FIG. 6 is an enlarged sectional view taken along line CC of FIG. 5;

FIG. 7 is a perspective view showing an electrode plate as a component applied to the electrode for plasma etching of FIG. 1;

FIG. 8 is a sectional view taken along line DD of FIG. 7;

9 is a cross-sectional view sequentially showing a situation when components of the plasma etching electrode of FIG. 1 are joined by an electric furnace.

10 is a cross-sectional view showing a state immediately after the components of the electrode for plasma etching of FIG. 1 are joined by an electric furnace.

FIG. 11 is a perspective view showing another embodiment in which the present invention is applied to a wafer support device.

FIG. 12 is an enlarged perspective view showing a main part of FIG. 11, showing an attachment state of a joining member arranged between a support rod and a fixing plate.

FIG. 13 is an enlarged perspective view showing a joining member of FIG. 11;

[Explanation of symbols]

Reference Signs List 1 electrode for plasma etching (member for semiconductor manufacturing equipment) 2 constituent member (outer ring) 3 bonding member 3a, 4a, 5a, 6a tapered surface 4 constituent member (electrode plate) 7 first bonding piece 8 second bonding piece 9 intermediate Member 15 Wafer support device (semiconductor manufacturing device member) 16, 17 Component member (fixed plate) 18 Component member (support rod)

 ────────────────────────────────────────────────── ─── Continuing on the front page (72) Inventor Isamu Masuda 2-1-4, Zao Matsugaoka, Yamagata City, Yamagata Prefecture F-term (reference) 5F004 AA00 BB19 BB28 BC08

Claims (17)

[Claims] 1. Two components having different coefficients of thermal expansion,
In a joining structure of constituent members to be joined via a joining member disposed therebetween, first and second joining pieces having the same or substantially the same quality as those of the respective constituent members are arranged on both sides, and the first and second joining pieces are arranged. An intermediate member is arranged between the pieces to integrally form the joining member, and the intermediate member is made of the same or substantially the same composition as the first and second joining pieces, and a ratio of the composition component. Is continuously or stepwise changed in the direction of the joining piece. 2. The method according to claim 1, wherein the composition of the intermediate member is a first component.
The joining structure of the component members according to claim 1, wherein the joining member gradually increases in a direction of the second joining piece. 3. The joining structure according to claim 1, wherein said joining member is formed by sintering with a powder having the same or substantially the same composition as the two constituting members. 4. The structure according to claim 1, wherein the first and second joining pieces are directly joined or welded to corresponding components. 5. The method according to claim 1, wherein one of the constituent members is made of single-crystal silicon, the other constituent member is made of quartz glass, and the first joining piece is made of polycrystalline or single-crystal silicon. 2. The method according to claim 1, wherein the piece is made of quartz glass.
Or the joining structure of the constituent members according to claim 3. 6. Two components having different coefficients of thermal expansion,
In a method of joining constituent members to be joined via a joining member disposed therebetween, first and second joining pieces having the same or substantially the same quality as those of the respective constituent members are arranged on both sides, and the first and second joining pieces are joined. An intermediate member is arranged between the pieces to form an integral member, and the intermediate member is connected to the first and second members.
A method of joining constituent members, comprising a composition component having the same or substantially the same quality as that of a joining piece, and changing the ratio of the composition component continuously or stepwise in the joining piece direction. 7. A first component corresponding to a composition component of the intermediate member.
7. The method for joining constituent members according to claim 6, wherein the number of members gradually increases in the direction of the second joining piece. 8. The method for joining components according to claim 6, wherein the joining member is formed by sintering a powder having the same or substantially the same composition as the two components. 9. The method for joining components according to claim 6, wherein the first and second joining pieces are directly heat-pressed or welded to the corresponding components. 10. The method according to claim 1, wherein one of the constituent members is made of single-crystal silicon, the other constituent member is made of quartz glass, and the first joint piece is made of polycrystalline or single-crystal silicon. 9. The method according to claim 6, wherein the piece is made of quartz glass. 11. A joining surface of the constituent member and a joining surface of the joining member are formed in a mirror-like tapered surface, and the constituent member and the joining member are fitted to each other through these joining surfaces, and these members are heated. 7. The method according to claim 6, wherein the fixing is performed by press-fitting. 12. A member for a semiconductor manufacturing apparatus in which a component member made of single crystal silicon and a component member made of quartz glass are connected to each other.
And a second joining piece are arranged on both sides, an intermediate member is arranged between the first and second joining pieces to provide an integrally constituted joining member, and the joining member is arranged between the constituent members. And connecting the intermediate member to the first and second members.
A member for a semiconductor manufacturing apparatus, comprising a composition component having the same or substantially the same quality as that of a joining piece, wherein the ratio of the composition component is changed continuously or stepwise in the direction of the joining piece. 13. The member for a semiconductor manufacturing apparatus according to claim 12, wherein a composition component of said intermediate member is gradually increased in a corresponding first or second bonding piece direction. 14. The member for a semiconductor manufacturing apparatus according to claim 12, wherein the joining member is formed by sintering with a powder having the same or substantially the same composition as the two constituent members. 15. The member for a semiconductor manufacturing apparatus according to claim 12, wherein said first and second joining pieces are directly joined or welded to corresponding constituent members. 16. The member for a semiconductor manufacturing apparatus according to claim 12, wherein said first joining piece is made of polycrystalline or single-crystal silicon, and said second joining piece is made of quartz glass. 17. The semiconductor manufacturing apparatus member is a plasma etching electrode or a wafer support apparatus.
3. The member for a semiconductor manufacturing apparatus according to 2.