JP2020136536A - Sample holding tool - Google Patents

Sample holding tool Download PDF

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JP2020136536A
JP2020136536A JP2019029712A JP2019029712A JP2020136536A JP 2020136536 A JP2020136536 A JP 2020136536A JP 2019029712 A JP2019029712 A JP 2019029712A JP 2019029712 A JP2019029712 A JP 2019029712A JP 2020136536 A JP2020136536 A JP 2020136536A
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spacer
sample holding
end surface
holding member
sample
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JP7214502B2 (en
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洋平 埜邑
Yohei Nomura
洋平 埜邑
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Kyocera Corp
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Abstract

To provide a sample holding tool that, even when a cycle of temperature increase and decrease is repeated, maintains the horizontalness of a sample holding surface for a long time and can be continuously used for a long period.SOLUTION: A sample holding tool 10 comprises: a plate-like sample holding member 11 that has a top face 11a on which a sample can be mounted and an under surface 11b used for joint; a support member 12 that bears the sample holding member 11; a first spacer 1A for clearance adjustment that is arranged between the sample holding member 11 and the support member 12; and a joint material (resin layer 4) that joins the sample holding member to the support member. The first spacer 1A is formed of resin and has a plate-like shape or a columnar shape, and the area of at least one of an upper end face and a lower end face of the first spacer 1A is larger than the horizontal direction cross-sectional area at the center part in the vertical direction of the first spacer 1A.SELECTED DRAWING: Figure 2

Description

本開示は、半導体集積回路の製造工程または液晶表示装置の製造工程等において用いられる、半導体ウエハ等の試料を保持する試料保持具に関する。 The present disclosure relates to a sample holder for holding a sample such as a semiconductor wafer, which is used in a manufacturing process of a semiconductor integrated circuit, a manufacturing process of a liquid crystal display device, or the like.

半導体製造装置等に用いられる試料保持具として、静電チャックが知られている。静電チャックは、ウエハ等の試料(被処理物またはワークともいう)を載置して吸着保持するための平坦な上面(試料保持面)を有する、絶縁体からなる板状の試料保持部材(基体またはセラミック体ともいう)と、この試料保持部材を下側から支承する、導電体からなる板状の支持部材(金属ベースまたはベースプレートともいう)とを、接着剤等の接合材により接合して構成されている。 An electrostatic chuck is known as a sample holder used in a semiconductor manufacturing apparatus or the like. The electrostatic chuck is a plate-shaped sample holding member (also referred to as an object to be processed or a work) made of an insulator and having a flat upper surface (sample holding surface) for mounting and sucking and holding a sample such as a wafer. A substrate or ceramic body) and a plate-shaped support member (also referred to as a metal base or base plate) made of a conductor that supports the sample holding member from below are joined by a bonding material such as an adhesive. It is configured.

接合された静電チャックの内部には、静電チャックの下部または底部から試料保持面である上面に向けて、上下の部材間で連通する複数の縦孔が設けられている。これらの縦孔(ガス供給流路ともいう)を通じて、ヘリウム等のガスが試料保持面に供給されるようになっている。 Inside the joined electrostatic chuck, a plurality of vertical holes communicating between the upper and lower members are provided from the lower portion or the bottom portion of the electrostatic chuck toward the upper surface which is the sample holding surface. Gas such as helium is supplied to the sample holding surface through these vertical holes (also referred to as gas supply flow paths).

試料保持部材と支持部材との接合に関し、特許文献1には、試料保持面である試料保持部材の上面を水平に保つために、試料保持部材(セラミックス部材)を支持部材(金属部材)に接合する際、試料保持部材と支持部材との間(界面)に、樹脂からなるスペーサ(スペーサー部)を複数個配置して積層する方法が開示されている。 Regarding the joining of the sample holding member and the supporting member, Patent Document 1 states that the sample holding member (ceramic member) is joined to the supporting member (metal member) in order to keep the upper surface of the sample holding member, which is the sample holding surface, horizontal. A method is disclosed in which a plurality of spacers (spacer portions) made of resin are arranged and laminated between the sample holding member and the supporting member (interface).

これによれば、試料保持部材と支持部材との間に塗布された接合材(接着剤)を、積層方向に等方圧を加えながら硬化させることにより、試料保持面を水平に維持する、均一な厚みの接合材層を得ることができる。 According to this, the bonding material (adhesive) applied between the sample holding member and the supporting member is cured while applying isotropic pressure in the stacking direction to maintain the sample holding surface horizontally, uniformly. A bonding material layer having a thickness of various thickness can be obtained.

特開2003−258072号公報Japanese Unexamined Patent Publication No. 2003-258072

ところで、前述したような、試料保持部材と支持部材との間に配設されたスペーサは、接着剤等により、その上側の端面(上端面)が試料保持部材の下面または底面に接着固定され、その下側の端面(下端面)が支持部材の上面または天面に接着固定されている。 By the way, as described above, the spacer disposed between the sample holding member and the supporting member has its upper end surface (upper end surface) adhesively fixed to the lower surface or the bottom surface of the sample holding member by an adhesive or the like. The lower end surface (lower end surface) is adhesively fixed to the upper surface or top surface of the support member.

しかしながら、試料保持具を構成する、セラミック製の試料保持部材と金属製の支持部材とは、熱に関する固有の線膨張係数(いわゆる熱膨張率)が異なるため、静電チャックを含む試料保持具が半導体製造工程の中で加熱(昇温)と除熱(降温)とが繰り返されるうち、試料保持部材とスペーサとの接合部(スペーサの上端面)あるいは支持部材とスペーサとの接合部(スペーサの下端面)に、上述の部材間の熱膨張率の差に起因する応力が加わり、いずれかの接合部が、接着固定された部材から剥離・脱落してしまう場合があった。 However, since the ceramic sample holding member and the metal supporting member constituting the sample holder have different linear expansion coefficients (so-called thermal expansion coefficient) with respect to heat, the sample holder including the electrostatic chuck is used. While heating (heating) and heat removal (lowering) are repeated in the semiconductor manufacturing process, the joint between the sample holding member and the spacer (upper end surface of the spacer) or the joint between the support member and the spacer (spacer) A stress due to the difference in the coefficient of thermal expansion between the above-mentioned members is applied to the lower end surface), and one of the joints may peel off or fall off from the adhesively fixed member.

このようなスペーサの、試料保持部材と支持部材との間からの剥離・脱落が複数発生すると、試料保持面を水平に維持できなくなって、この試料保持具(静電チャック)を用いて製造される製品(被処理物またはワーク)の均質な処理が難しくなり、ひいては、製品の歩留まりに影響を及ぼす可能性がある。 If a plurality of such spacers are peeled off or dropped from between the sample holding member and the supporting member, the sample holding surface cannot be maintained horizontally, and the sample holding tool (electrostatic chuck) is used for manufacturing. It becomes difficult to uniformly process the product (workpiece or workpiece), which may affect the yield of the product.

本開示の目的は、昇温と降温のサイクルを繰り返しても、試料保持面の水平が長く維持され、長期にわたり使い続けることのできる試料保持具を提供することである。 An object of the present disclosure is to provide a sample holder that can be used for a long period of time by maintaining the horizontality of the sample holding surface for a long time even if the cycle of raising and lowering the temperature is repeated.

本開示の試料保持具は、試料を載置可能な上面と位置固定のための接合に用いられる下面とを有する平板状の試料保持部材と、平坦面を有する支持部材であって、前記平坦面と前記試料保持部材の前記下面とが対向するように前記試料保持部材を支承する支持部材と、前記試料保持部材の前記下面と前記支持部材の前記平坦面との間に配置される間隙調整用の第1スペーサと、前記試料保持部材の前記下面と前記支持部材の前記平坦面との間に配設されて、前記試料保持部材と前記支持部材とを接合する接合材と、を備える。
前記第1スペーサは、樹脂からなる板状または柱状であり、前記1スペーサの上端面および下端面の少なくとも一方の面積が、前記第1スペーサの上下方向中央部の水平方向断面積よりも大きいことを特徴とする。
The sample holder of the present disclosure is a flat sample holding member having a flat surface having an upper surface on which a sample can be placed and a lower surface used for joining for fixing a position, and a support member having a flat surface. For adjusting the gap, which is arranged between the support member that supports the sample holding member so that the lower surface of the sample holding member faces the lower surface of the sample holding member, and the lower surface of the sample holding member and the flat surface of the supporting member. The first spacer is provided, and a joining material that is disposed between the lower surface of the sample holding member and the flat surface of the supporting member to join the sample holding member and the supporting member.
The first spacer has a plate shape or a columnar shape made of resin, and the area of at least one of the upper end surface and the lower end surface of the first spacer is larger than the horizontal cross section of the vertical center portion of the first spacer. It is characterized by.

本開示の試料保持具の構成によれば、昇温・降温のサイクルを繰り返しても、間隙調整用のスペーサの損耗が抑制されているため、試料保持面の水平が維持される。これにより、本開示の試料保持具は、処理回数が経時的に増えても、試料保持面に載置・保持した試料(被処理物)の、処理時における水平方向の均熱が、損なわれることがない。したがって、本開示の試料保持具は、試料保持面に保持されたウエハ等の処理対象物に対する均質な処理を、長く維持することができる。また、その結果、長期にわたって使い続けることが可能な試料保持具とすることができる。 According to the configuration of the sample holder of the present disclosure, even if the cycle of raising and lowering the temperature is repeated, the wear of the spacer for adjusting the gap is suppressed, so that the level of the sample holding surface is maintained. As a result, in the sample holder of the present disclosure, even if the number of treatments increases over time, the horizontal heat equalization of the sample (object to be treated) placed and held on the sample holding surface during the treatment is impaired. Never. Therefore, the sample holder of the present disclosure can maintain a homogeneous treatment of a processing object such as a wafer held on the sample holding surface for a long time. As a result, the sample holder can be used for a long period of time.

実施形態の試料保持具を上から見下ろした平面図である。It is a top view which looked down on the sample holder of an embodiment. 実施形態の試料保持具の断面図である。It is sectional drawing of the sample holder of an embodiment. (a)は図2における第1スペーサ部位の拡大図であり、(b)と(c)は第1スペーサ1Aの側面図と上面図、(d)は第1スペーサ1Aの他の形状例である。(A) is an enlarged view of the first spacer portion in FIG. 2, (b) and (c) are side views and top views of the first spacer 1A, and (d) is another shape example of the first spacer 1A. is there. (a)は図2における第1スペーサ部位の拡大図であり、(b)と(c)は第1スペーサ1Bの側面図と上面図、(d)は第1スペーサ1Bの他の形状例である。(A) is an enlarged view of the first spacer portion in FIG. 2, (b) and (c) are side views and top views of the first spacer 1B, and (d) is another shape example of the first spacer 1B. is there. (a)は図2における第2スペーサ部位の拡大図であり、(b)と(c)は第2スペーサの断面図と上面図、(d)は第2スペーサの他の形状例である。(A) is an enlarged view of the second spacer portion in FIG. 2, (b) and (c) are a cross-sectional view and a top view of the second spacer, and (d) is another shape example of the second spacer. (a)は図2における両周縁部の拡大図であり、(b)は第3スペーサの部分断面図、(c)は第3スペーサの上面図である。(A) is an enlarged view of both peripheral edges in FIG. 2, (b) is a partial cross-sectional view of the third spacer, and (c) is a top view of the third spacer.

以下、本開示の実施形態について、図面を用いて説明する。
なお、図面では、互いに直交する3軸として、セラミック体11の円周方向を〔X方向〕、セラミック体11の中心点を通る径(直径)方向を〔Y方向〕、試料保持面(基体上面11a)に垂直でかつセラミック体11の厚みを示す方向(図では鉛直方向)を〔Z方向」として表示している。
Hereinafter, embodiments of the present disclosure will be described with reference to the drawings.
In the drawings, the circumferential direction of the ceramic body 11 is [X direction], the diameter (diameter) direction passing through the center point of the ceramic body 11 is [Y direction], and the sample holding surface (upper surface of the substrate) is defined as three axes orthogonal to each other. The direction (vertical direction in the figure) perpendicular to 11a) and indicating the thickness of the ceramic body 11 is indicated as the [Z direction].

また、以下の実施形態においては、図1に示すように円板状のセラミック体11の質量および荷重(加重)を、円の中心およびその周囲の領域(以下「中央領域」という)において支承するスペーサを第1スペーサ(符号1Aおよび1B)、円の外周部の縁部領域において支承する大径のリング状のスペーサを第3スペーサ(符号3)と呼ぶ。また、これら中央領域と縁部領域の間の領域に設けられたガス供給用の孔(ガス供給用貫通孔13)の周囲に配設され、前記ガスの上下方向[Z方向]の流通を可能にする穴部を有する小径の環状のスペーサを、第2スペーサ(符号2)と呼ぶ。 Further, in the following embodiment, as shown in FIG. 1, the mass and load (weight) of the disk-shaped ceramic body 11 are supported in the center of the circle and the surrounding region (hereinafter referred to as “central region”). The spacer is referred to as a first spacer (reference numerals 1A and 1B), and a large-diameter ring-shaped spacer supported in the edge region of the outer peripheral portion of the circle is referred to as a third spacer (reference numeral 3). Further, it is arranged around the gas supply hole (gas supply through hole 13) provided in the region between the central region and the edge region, and the gas can be circulated in the vertical direction [Z direction]. A small-diameter annular spacer having a hole to be formed is called a second spacer (reference numeral 2).

図1および図2に示す実施形態の試料保持具10は、半導体集積回路の製造工程において、セラミック体11内に配設された半円状電極E1,E2間に電流を印加することにより発生する静電力によって、試料保持面であるセラミック体上面11aに載置された半導体ウエハ等の試料(被処理物、ワーク等を含む)を、静電吸着して保持面上に位置固定する、静電チャックとして用いられるものである。 The sample holder 10 of the embodiment shown in FIGS. 1 and 2 is generated by applying a current between the semicircular electrodes E1 and E2 arranged in the ceramic body 11 in the manufacturing process of the semiconductor integrated circuit. By electrostatic force, a sample (including an object to be processed, a work, etc.) such as a semiconductor wafer placed on the upper surface 11a of a ceramic body, which is a sample holding surface, is electrostatically attracted and fixed in position on the holding surface. It is used as a chuck.

試料保持具10は、図1の上面図および図1のW−W’線断面図(図2)に示すように、鉛直方向上側(図中では〔Z方向〕プラス側)に配置された、絶縁体である円板状のセラミック体11と、その下側(〔Z方向〕マイナス側)に配設された、金属製のベースプレート12とを、接着剤等が硬化した樹脂層4により接合して構成されている。 The sample holder 10 is arranged on the upper side in the vertical direction ([Z direction] plus side in the drawing) as shown in the top view of FIG. 1 and the WW'line sectional view (FIG. 2) of FIG. The disc-shaped ceramic body 11 which is an insulator and the metal base plate 12 arranged on the lower side ([Z direction] minus side) thereof are joined by a resin layer 4 on which an adhesive or the like is cured. It is composed of.

なお、セラミック体11は本開示の試料保持部材の一例、ベースプレート12は本開示の支持部材の一例、樹脂層4は本開示の接合材での一例である。また、断面図における樹脂層4およびその間の各スペーサ1A,1B,2,3の厚みは、強調して描いている。 The ceramic body 11 is an example of the sample holding member of the present disclosure, the base plate 12 is an example of the support member of the present disclosure, and the resin layer 4 is an example of the bonding material of the present disclosure. Further, the thicknesses of the resin layer 4 and the spacers 1A, 1B, 2 and 3 between them in the cross-sectional view are emphasized.

セラミック体11は、全体形状が円板状で、一方の主面である上面11aが、試料保持面となっている。セラミック体11(試料保持部材)の構成材料は、たとえばアルミナ、窒化アルミニウム、窒化珪素、またはイットリア等とすることができる。セラミック体11の代表的な外形寸法は、直径(または辺長)200〜500mm程度、厚さ2〜15mm程度である。 The ceramic body 11 has a disk shape as a whole, and the upper surface 11a, which is one of the main surfaces, serves as a sample holding surface. The constituent material of the ceramic body 11 (sample holding member) can be, for example, alumina, aluminum nitride, silicon nitride, yttria, or the like. Typical external dimensions of the ceramic body 11 are a diameter (or side length) of about 200 to 500 mm and a thickness of about 2 to 15 mm.

セラミック体11は、その内部に、前述の静電吸着用の電極E1,E2を備える。また、セラミック体11は、上面11aに載置された試料の裏面に試料冷却用のガスを供給するための縦孔として、複数のガス供給用貫通孔13が設けられている。 The ceramic body 11 includes the above-mentioned electrodes E1 and E2 for electrostatic adsorption inside the ceramic body 11. Further, the ceramic body 11 is provided with a plurality of gas supply through holes 13 as vertical holes for supplying a sample cooling gas to the back surface of the sample placed on the upper surface 11a.

各ガス供給用貫通孔13は、他方の主面である下面11bから上面11aまで貫通する。各ガス供給用貫通孔13は、試料裏面に満遍なくガスを供給できるよう、図1に示すように、円板の周方向に等配となる位置に配置されている。 Each gas supply through hole 13 penetrates from the lower surface 11b to the upper surface 11a, which is the other main surface. As shown in FIG. 1, the gas supply through holes 13 are arranged at positions that are evenly distributed in the circumferential direction of the disk so that the gas can be evenly supplied to the back surface of the sample.

なお、図1に示す各ガス供給用貫通孔13は、孔の上側開口(13a)を示している。また、図1に示す各ガス供給用貫通孔13の周囲の隠れ線(点線)は、各孔の下側(下端)の開口13bの周囲に位置する、第2スペーサ2である。各ガス供給用貫通孔13は、それぞれ、円環状の第2スペーサ2の中央に形成された穴部を介して、後述するベースプレート12の縦孔(ガス供給孔14)と連通している。 Each gas supply through hole 13 shown in FIG. 1 shows an upper opening (13a) of the hole. Further, the hidden line (dotted line) around each gas supply through hole 13 shown in FIG. 1 is a second spacer 2 located around the opening 13b on the lower side (lower end) of each hole. Each of the gas supply through holes 13 communicates with a vertical hole (gas supply hole 14) of the base plate 12, which will be described later, via a hole formed in the center of the annular second spacer 2.

ベースプレート12は、セラミック体11を支持・支承するための部材であり、アルミニウム等の金属材料を用いて構成されている。ベースプレート12の代表的な外形寸法は、直径(または辺長)200〜500mm程度、厚さ10〜100mm程度である。 The base plate 12 is a member for supporting and supporting the ceramic body 11, and is made of a metal material such as aluminum. Typical external dimensions of the base plate 12 are a diameter (or side length) of about 200 to 500 mm and a thickness of about 10 to 100 mm.

ベースプレート12の内部には、先述の各ガス供給用貫通孔13と平面視で同じ位置に、ガス供給用貫通孔13と連通するガス供給孔14が設けられている。各ガス供給孔14の上側(上端)の開口14aは、ベースプレート12の上面12aに開口する。また、各ガス供給孔14の下端は、横方向の連絡流路14bに接続されている。各ガス供給孔14の下端は、ベースプレート12の下面12bに開口していてもよい。 Inside the base plate 12, a gas supply hole 14 communicating with the gas supply through hole 13 is provided at the same position as the gas supply through hole 13 described above in a plan view. The upper (upper end) opening 14a of each gas supply hole 14 opens to the upper surface 12a of the base plate 12. Further, the lower end of each gas supply hole 14 is connected to the lateral connecting flow path 14b. The lower end of each gas supply hole 14 may be opened to the lower surface 12b of the base plate 12.

なお、セラミック体11およびベースプレート12の外形状は、特に円形に限定されるものではない。上側(上面)に試料を載置可能なように、板状が望ましいが、外形形状は、四角形状、多角形状等であってもよい。また、必ずしも、セラミック体11とベースプレート12とを、同じまたは相似の外形形状とする必要はない。 The outer shapes of the ceramic body 11 and the base plate 12 are not particularly limited to a circular shape. A plate shape is desirable so that the sample can be placed on the upper side (upper surface), but the outer shape may be a quadrangular shape, a polygonal shape, or the like. Further, the ceramic body 11 and the base plate 12 do not necessarily have the same or similar outer shape.

セラミック体11とベースプレート12とを接合する接合材(接着剤)としては、たとえば、シリコーン樹脂などが用いられる。そして、セラミック体11とベースプレート12との間には、前述の接合材(接着剤)の硬化養生後、これらセラミック体11とベースプレート12とを一体とする、接合材が硬化した樹脂層4が形成される。 As the bonding material (adhesive) for joining the ceramic body 11 and the base plate 12, for example, a silicone resin or the like is used. Then, between the ceramic body 11 and the base plate 12, a resin layer 4 in which the bonding material is cured is formed, in which the ceramic body 11 and the base plate 12 are integrated after curing and curing of the above-mentioned bonding material (adhesive). Will be done.

なお、前述の接合材(接着剤)は、後述の各スペーサの上下方向の両端面と、セラミック体11またはベースプレート12との間にも塗布され、あるいは、これらの界面に表面張力により侵入して、硬化し、各スペーサを、セラミック体11またはベースプレート12に対して位置決めして固定する作用を奏する。 The above-mentioned bonding material (adhesive) is also applied between both ends of each spacer described later in the vertical direction and the ceramic body 11 or the base plate 12, or penetrates into these interfaces by surface tension. It cures and acts to position and fix each spacer to the ceramic body 11 or the base plate 12.

以上のような構成のセラミック体11とベースプレート12とは、図2の断面図に示すように、試料保持面である上面11aを水平に保つために、セラミック体11の下面11bとベースプレート12の上面12aとの間に、間隙調整部材として、以下に説明する複数種の樹脂製のスペーサを適切に配設(介在配置)した状態で、その間に前述の接合材(接着剤)等が塗布等され、加圧圧着して接合されている。 As shown in the cross-sectional view of FIG. 2, the ceramic body 11 and the base plate 12 having the above-described configuration are the lower surface 11b of the ceramic body 11 and the upper surface of the base plate 12 in order to keep the upper surface 11a which is the sample holding surface horizontal. A plurality of types of resin spacers described below are appropriately arranged (intervened) between the 12a and the gap adjusting member, and the above-mentioned bonding material (adhesive) or the like is applied between them. , Pressurized and bonded.

具体的には、実施形態の試料保持具10のスペーサとして、板状(膜状)または柱状の第1スペーサ1A(図3)および1B(図4)と、円環状の小径の第2スペーサ2(図5)と、大径のリング状の第3スペーサ3(図6)とが、用いられている。以下、各スペーサについて説明する。 Specifically, as spacers for the sample holder 10 of the embodiment, plate-shaped (membrane-shaped) or columnar first spacers 1A (FIG. 3) and 1B (FIG. 4) and an annular small-diameter second spacer 2 (FIG. 5) and a ring-shaped third spacer 3 (FIG. 6) having a large diameter are used. Hereinafter, each spacer will be described.

まず、図3に示す円柱状の第1スペーサ1Aと、その変形例である、図4に示す第1スペーサ1Bとは、図1の円板状のセラミック体11の平面図において、ガス供給用貫通孔13(開口13a)の形成位置を除く、先に述べた「中央領域」、「縁部領域」、またはこれらの中間位置の「中間領域」のいずれの領域にも広く配設可能な、汎用的なスペーサである。 First, the columnar first spacer 1A shown in FIG. 3 and the first spacer 1B shown in FIG. 4, which is a modification thereof, are for gas supply in the plan view of the disk-shaped ceramic body 11 of FIG. Except for the formation position of the through hole 13 (opening 13a), it can be widely arranged in any of the above-mentioned "central region", "edge region", or "intermediate region" at the intermediate position thereof. It is a general-purpose spacer.

なお、本実施形態(図1の平面図)においては、前記「中央領域」のうち、ベースプレート12(セラミック体11)の熱膨張や熱収縮が小さいと考えられる中央(中心)部分に第1スペーサ1A(図3)を配置し、比較的、ベースプレート12の熱膨張や熱収縮が大きくなると考えられる、中間領域に近い外方部分に、第1スペーサ1B(図4)を配置しているが、これら第1スペーサ1A(図3)および第1スペーサ1B(図4)の配置および使用個数は、図1の例に限定されるものではなく、1Aと1Bの位置を入れ換えたり、1Aまたは1Bの一方のみを使用して構成することもできる。 In the present embodiment (plan view of FIG. 1), the first spacer is located in the central (center) portion of the "central region" where the thermal expansion and contraction of the base plate 12 (ceramic body 11) is considered to be small. Although 1A (FIG. 3) is arranged, the first spacer 1B (FIG. 4) is arranged in the outer portion near the intermediate region where the thermal expansion and contraction of the base plate 12 are considered to be relatively large. The arrangement and number of the first spacers 1A (FIG. 3) and the first spacers 1B (FIG. 4) are not limited to the example of FIG. 1, and the positions of 1A and 1B can be exchanged, or 1A or 1B can be used. It can also be configured using only one.

第1スペーサ1Aは、図3(b)の側面図および図3(c)の上面図に示すように、上端面1cおよび下端面1eの少なくとも一方(この例では両方)の面積が、スペーサの上下方向中央部1dの水平方向断面積よりも大きくなっている。 As shown in the side view of FIG. 3B and the top view of FIG. 3C, the first spacer 1A has an area of at least one (both in this example) of the upper end surface 1c and the lower end surface 1e of the spacer. It is larger than the horizontal cross section of the central portion 1d in the vertical direction.

具体的には、第1スペーサ1Aが、図3(b),(c)のように円柱状である場合、この第1スペーサ1Aの、上端面1cの面積の大小を代用する「直径D01」は、中央部1dの断面積を代用する「直径D02」よりも大きい(D01>D02)。また、下端面1eの面積を代用する「直径D03」は、中央部1dの断面積を代用する「直径D02」よりも大きい(D02<D03)。 Specifically, when the first spacer 1A has a columnar shape as shown in FIGS. 3 (b) and 3 (c), the “diameter D01” that substitutes the size of the area of the upper end surface 1c of the first spacer 1A. Is larger than the "diameter D02" that substitutes for the cross-sectional area of the central portion 1d (D01> D02). Further, the "diameter D03" that substitutes the area of the lower end surface 1e is larger than the "diameter D02" that substitutes the cross-sectional area of the central portion 1d (D02 <D03).

また、第1スペーサ1Aにおいては、上端面1cの直径D01と下端面1eの直径D03とは、ほぼ同じ大きさ(径)になっている。そして、中央部1dの直径D02が、その上下の直径D01および直径D03より小さいため、第1スペーサ1Aの外周面(1d部分)は、内側に向かって凹状の曲面となっている。 Further, in the first spacer 1A, the diameter D01 of the upper end surface 1c and the diameter D03 of the lower end surface 1e have substantially the same size (diameter). Since the diameter D02 of the central portion 1d is smaller than the diameters D01 and D03 above and below the central portion 1d, the outer peripheral surface (1d portion) of the first spacer 1A has a concave curved surface toward the inside.

なお、第1スペーサ1Aの外周面(1d部分)は、必ずしも曲面とする必要はなく、図3(d)に示す変形例1A’のように、直線で構成してもよい。 The outer peripheral surface (1d portion) of the first spacer 1A does not necessarily have to be a curved surface, and may be formed of a straight line as in the modified example 1A'shown in FIG. 3D.

ちなみに、図3(b)に記載の第1スペーサ1Aおよび図3(d)に記載の第1スペーサ1A’は、外周面が内側に向かって凹む、いわゆる「くびれた」円柱状であることから、全体形状は鼓(つづみ)型または鼓様であるとも言える。 Incidentally, since the first spacer 1A shown in FIG. 3B and the first spacer 1A'shown in FIG. 3D are so-called "constricted" cylinders whose outer peripheral surfaces are recessed inward. , It can be said that the overall shape is drum-shaped or drum-like.

ここで、第1スペーサ1Aは、最終的に、図3(a)に示すように、セラミック体11とベースプレート12との間に、間隙調整部材として配設され、前述した接着剤等が硬化した薄い樹脂層4を介して、上端面1cがセラミック体11の下面11bに接着固定され、下端面1eがベースプレート12の上面12aに接着固定されて、セラミック体11を水平に維持する。 Here, the first spacer 1A is finally disposed as a gap adjusting member between the ceramic body 11 and the base plate 12, as shown in FIG. 3A, and the above-mentioned adhesive or the like is cured. The upper end surface 1c is adhesively fixed to the lower surface 11b of the ceramic body 11 and the lower end surface 1e is adhesively fixed to the upper surface 12a of the base plate 12 via the thin resin layer 4, and the ceramic body 11 is maintained horizontally.

そして、この状態で、半導体製造工程中等において、上面11aに載置・保持した試料の処理または加工のために、試料保持具10の全体が加熱(昇温)または除熱(降温)されることが繰り返される。この際、先にも述べたように、従来の試料保持具では、セラミック体11に固定された上端面1cの周縁部(第1スペーサ1Aにおけるセラミック体11側の2箇所の角部)、または、ベースプレート12に固定された下端面1eの周縁部(第1スペーサ1Aにおけるベースプレート12側の2箇所の角部)に、部材間の熱膨張率の差に起因する応力(図示横方向のせん断応力)が加わり、接着固定された部材から剥離してしまう場合があった。 Then, in this state, the entire sample holder 10 is heated (heated) or deheated (lowered) in order to process or process the sample placed / held on the upper surface 11a during the semiconductor manufacturing process or the like. Is repeated. At this time, as described above, in the conventional sample holder, the peripheral edge portion of the upper end surface 1c fixed to the ceramic body 11 (two corners on the ceramic body 11 side in the first spacer 1A) or , Stress caused by the difference in the coefficient of thermal expansion between the members (shear stress in the horizontal direction shown in the drawing) on the peripheral edge of the lower end surface 1e fixed to the base plate 12 (two corners on the base plate 12 side in the first spacer 1A). ) Was added, and the member may be peeled off from the adhesively fixed member.

これに対して、実施形態の試料保持具10においては、前述の第1スペーサ1Aの構成により、この上端面1cの周縁部(セラミック体11側の2箇所の角部)または下端面1eの周縁部(ベースプレート12側の2箇所の角部)に加わる前記応力が分散され、前記の応力が、これら周縁部(角部)に集中することが緩和される。したがって、前述の構成の第1スペーサ1Aを間隙調整用スペーサとして用いた試料保持具10は、この第1スペーサ1Aの、ランニング中における剥離・脱落が抑制されている。 On the other hand, in the sample holder 10 of the embodiment, due to the configuration of the first spacer 1A described above, the peripheral edge of the upper end surface 1c (two corners on the ceramic body 11 side) or the peripheral edge of the lower end surface 1e. The stress applied to the portions (two corner portions on the base plate 12 side) is dispersed, and the concentration of the stress on these peripheral portions (corner portions) is alleviated. Therefore, in the sample holder 10 using the first spacer 1A having the above-described configuration as the gap adjusting spacer, the first spacer 1A is suppressed from being peeled off or dropped off during running.

よって、実施形態の試料保持具10によれば、試料保持面(上面11a)の水平、およびその水平の維持による試料の均熱が、損なわれることがない。そのため、試料保持面に載置されたウエハ等の試料(処理対象物)に対する均質な処理を、長期にわたり安定して維持することができる。その結果、本実施形態の試料保持具10は、長期にわたり継続して使用することが可能になる。 Therefore, according to the sample holder 10 of the embodiment, the horizontal of the sample holding surface (upper surface 11a) and the soaking heat of the sample by maintaining the horizontal are not impaired. Therefore, a homogeneous treatment of a sample (object to be processed) such as a wafer placed on the sample holding surface can be stably maintained for a long period of time. As a result, the sample holder 10 of the present embodiment can be continuously used for a long period of time.

つぎに、図1の平面図における「中央領域」と「縁部領域」との間の、径方向中間の領域に配置される第1スペーサ1Bは、図4(b)の側面図および図4(c)の上面図に示すように、前述の第1スペーサ1Aと同様、上端面1fおよび下端面1hの少なくとも一方(この例では両方)の面積が、スペーサ1Bの上下方向中央部1gの水平方向断面積よりも大きくなっている。 Next, the first spacer 1B arranged in the radial intermediate region between the "central region" and the "edge region" in the plan view of FIG. 1 is the side view of FIG. 4B and FIG. As shown in the top view of (c), the area of at least one (both in this example) of the upper end surface 1f and the lower end surface 1h is horizontal to the vertical central portion 1g of the spacer 1B, as in the case of the first spacer 1A described above. It is larger than the directional cross section.

すなわち、第1スペーサ1Bが円柱状である場合、この第1スペーサ1Bの、上端面1fの面積の大小を代用する「直径D04」は、中央部1gの断面積を代用する「直径D05」よりも大きい(D04>D05)。また、下端面1hの面積を代用する「直径D06」は、中央部1gの断面積を代用する「直径D05」よりも大きい(D05<D06)。これらの点は、第1スペーサ1Aと同様である。 That is, when the first spacer 1B is cylindrical, the "diameter D04" that substitutes the size of the area of the upper end surface 1f of the first spacer 1B is from the "diameter D05" that substitutes the cross-sectional area of the central portion 1g. Is also large (D04> D05). Further, the "diameter D06" that substitutes the area of the lower end surface 1h is larger than the "diameter D05" that substitutes the cross-sectional area of the central portion 1g (D05 <D06). These points are the same as those of the first spacer 1A.

第1スペーサ1Aと異なる点は、第1スペーサ1Aにおいては、ほぼ同じ大きさ(径)であった、上端面の直径(D01)と下端面の直径(D03)とが、第1スペーサ1Bでは異なっており、上端面1fの面積の大小を代用する「直径D04」が、下端面1hの面積を代用する「直径D06」よりも大きい(D04>D06)点である。 The difference from the first spacer 1A is that the diameter of the upper end surface (D01) and the diameter of the lower end surface (D03), which were almost the same size (diameter) in the first spacer 1A, are different in the first spacer 1B. It is different, and the "diameter D04" that substitutes the size of the area of the upper end surface 1f is larger (D04> D06) than the "diameter D06" that substitutes the area of the lower end surface 1h.

それ以外の、第1スペーサ1Bの外周面(1g部分)が内側に向かって凹状の曲面となっている点、および、その外周面(1g部分)は変形例1B’のように直線で構成してもよい点〔図4(d)を参照〕は、第1スペーサ1Aと同様である。 Other than that, the outer peripheral surface (1 g portion) of the first spacer 1B has a concave curved surface inward, and the outer peripheral surface (1 g portion) is composed of a straight line as in the modified example 1B'. The points may be the same as those of the first spacer 1A [see FIG. 4D].

上記の構成によっても、第1スペーサ1Aと同等の効果を奏することができる。 Even with the above configuration, the same effect as that of the first spacer 1A can be obtained.

加えて、第1スペーサ1Aの構成に比べ、セラミック体11側の上端面1fの直径D04が、ベースプレート12側の下端面1hの直径D06よりも大きい(D04>D06)ため、セラミック体11体側の「接合力」が、より向上している。 In addition, compared to the configuration of the first spacer 1A, the diameter D04 of the upper end surface 1f on the ceramic body 11 side is larger than the diameter D06 of the lower end surface 1h on the base plate 12 side (D04> D06), so that the diameter D04 on the ceramic body 11 side The "bonding force" is further improved.

すなわち、接着相手部材(セラミック体11)の熱膨張率が小さいため、このセラミック体11側は、ベースプレート12側に比べて応力(せん断応力)が生じ易いと考えられる。これに対応して、第1スペーサ1Bでは、セラミック体11体側の「接合力」が向上している。 That is, since the coefficient of thermal expansion of the bonding partner member (ceramic body 11) is small, it is considered that stress (shear stress) is more likely to occur on the ceramic body 11 side than on the base plate 12 side. Correspondingly, in the first spacer 1B, the "bonding force" on the side of the 11 ceramic bodies is improved.

これにより、第1スペーサ1Bは、セラミック体11側の上端面1fにおいて、ランニング中におけるスペーサの剥離・脱落が、より抑制されている。したがって、第1スペーサ1Bは、応力がかかり易い、「中央領域」と「縁部領域」との間の径方向中間の領域に配置されても、剥離や脱落等の発生を抑制することができる。 As a result, the first spacer 1B is further suppressed from peeling / falling off during running on the upper end surface 1f on the ceramic body 11 side. Therefore, even if the first spacer 1B is arranged in a region intermediate in the radial direction between the "central region" and the "edge region" where stress is easily applied, it is possible to suppress the occurrence of peeling, dropping, and the like. ..

つぎに、図1の平面図における、径方向中間の領域の各ガス供給用貫通孔13(およびベースプレート12側のガス供給孔14)の開口の周囲には、これら開口の周囲のシール部材を兼ねて、図5に示す第2スペーサが配設される。 Next, in the plan view of FIG. 1, around the openings of the gas supply through holes 13 (and the gas supply holes 14 on the base plate 12 side) in the radial intermediate region, a sealing member around these openings also serves. The second spacer shown in FIG. 5 is arranged.

第2スペーサ2も、第1スペーサ1A,1B同様、図5(b)および図5(c)に示すように、上端面2aおよび下端面2bの両方の面積が、スペーサ2の上下方向中央部2cの水平方向断面積よりも大きくなっている。すなわち、端面の面積の大小を代用する「直径D07」と「直径D09」とは、中央部2cの断面積を代用する「直径D08」よりも大きい(D07>D08,D08<D09)。 Similar to the first spacers 1A and 1B, the area of both the upper end surface 2a and the lower end surface 2b of the second spacer 2 is the central portion in the vertical direction of the spacer 2, as shown in FIGS. 5 (b) and 5 (c). It is larger than the horizontal cross section of 2c. That is, the "diameter D07" and "diameter D09" that substitute the size of the area of the end face are larger than the "diameter D08" that substitutes the cross-sectional area of the central portion 2c (D07> D08, D08 <D09).

上記構成による作用と、その外周面(2c部分)の形状およびその変形例2’〔図5(d)参照〕については、第1スペーサ1A,1Bと同様であるため、詳しい説明を省略する。 The operation according to the above configuration, the shape of the outer peripheral surface (2c portion) thereof, and the modification 2'[see FIG. 5D] are the same as those of the first spacers 1A and 1B, and thus detailed description thereof will be omitted.

第2スペーサ2が、第1スペーサ1A,1Bと異なる点は、その内周に、上側のガス供給用貫通孔13(縦孔)と下側のガス供給孔14(縦孔)とを連通させる、連通孔(内周面2d)が形成され、全体として、円環状になっている点である。 The difference between the second spacer 2 and the first spacers 1A and 1B is that the upper gas supply through hole 13 (vertical hole) and the lower gas supply hole 14 (vertical hole) communicate with each other on the inner circumference thereof. , A communication hole (inner peripheral surface 2d) is formed, which is an annular shape as a whole.

なお、図5(a)に示すように、第2スペーサ2の上端面2a(円環形)は、ガス供給用貫通孔13の下面開口13bの周囲のセラミック体11の下面11bに接合されており、第2スペーサ2の下端面2a(円環形)は、ガス供給孔14の上面開口14aの周囲のベースプレート12の上面12aに接合されている。これにより、上側のガス供給用貫通孔13(縦孔)と下側のガス供給孔14(縦孔)とを連通させつつ、これら貫通孔の接続部分をシールしている。 As shown in FIG. 5A, the upper end surface 2a (annular shape) of the second spacer 2 is joined to the lower surface 11b of the ceramic body 11 around the lower surface opening 13b of the gas supply through hole 13. The lower end surface 2a (annular shape) of the second spacer 2 is joined to the upper surface 12a of the base plate 12 around the upper surface opening 14a of the gas supply hole 14. As a result, the upper gas supply through hole 13 (vertical hole) and the lower gas supply hole 14 (vertical hole) are communicated with each other, and the connecting portion of these through holes is sealed.

そして、円環を構成する一方の壁部(この例では図示右側の壁部)に着目してみると、その個々の壁部においても、外周面2cによるスペーサ全体の構成と同様、図5(c)に示すように、上端面2aおよび下端面2bの両方の面積が、スペーサ2の上下方向中央部2cの水平方向断面積よりも大きくなっている。 Then, paying attention to one wall portion (the wall portion on the right side in the drawing in this example) constituting the annulus, FIG. 5 (in this example, the same as the configuration of the entire spacer by the outer peripheral surface 2c) in the individual wall portions As shown in c), the areas of both the upper end surface 2a and the lower end surface 2b are larger than the horizontal cross section of the vertical central portion 2c of the spacer 2.

すなわち、上端面2aの面積を代表する「径方向の厚み(長さ)T01」と下端面2bの面積を代表する「径方向厚みT03」とは、中央部2cの断面積を代表する「径方向厚みT02」よりも大きい(T01>T02,T02<T03)。これにより、第2スペーサ2の内周面2dは、円環の外側に向かって凹状の曲面となっている。 That is, the "diameter thickness (length) T01" representing the area of the upper end surface 2a and the "diameter thickness T03" representing the area of the lower end surface 2b are "diameters" representing the cross-sectional area of the central portion 2c. It is larger than the "direction thickness T02" (T01> T02, T02 <T03). As a result, the inner peripheral surface 2d of the second spacer 2 has a concave curved surface toward the outside of the annulus.

なお、「径(直径)方向」とは、図1における〔Y方向]のことである。また、外周面」2cと同様、その内周面2dも、図5(d)の変形例2’に示すように、直線で構成されていてもよい。 The "diameter (diameter) direction" is the [Y direction] in FIG. Further, similarly to the outer peripheral surface 2c, the inner peripheral surface 2d may also be formed of a straight line as shown in the modified example 2'of FIG. 5 (d).

以上の構成の第2スペーサ2によれば、上端面2aの周縁部(セラミック体11側の角部2箇所)または下端面2beの周縁部(ベースプレート12側の角部2箇所)に加わるせん断応力が緩和される。したがって、この第2スペーサ2においても、ランニング中に発生する剥離、脱落等が抑制されている。 According to the second spacer 2 having the above configuration, the shear stress applied to the peripheral edge of the upper end surface 2a (two corners on the ceramic body 11 side) or the peripheral edge of the lower end surface 2be (two corners on the base plate 12 side). Is relaxed. Therefore, even in the second spacer 2, peeling, falling off, etc. that occur during running are suppressed.

つぎに、図1の平面図における「縁部領域」には、図6に示すように、セラミック体11の外周縁部の形状に沿った、リング状の第3スペーサ3が配設される。 Next, as shown in FIG. 6, a ring-shaped third spacer 3 is arranged in the “edge region” in the plan view of FIG. 1 along the shape of the outer peripheral edge portion of the ceramic body 11.

第3スペーサ3のリング(円環)を構成する一方の壁部(この例では図示左側の壁部)に着目してみると、その個々の壁部においては、図6(b)に示すように、上端面3aおよび下端面3bの両方の面積が、スペーサ3の上下方向中央部3cの水平方向断面積よりも大きくなっている。すなわち、上端面3aの面積を代表する「径方向厚み(長さ)T04」および下端面3bの面積を代表する「径方向厚みT06」は、中央部(3c部分)の断面積を代表する「径方向厚みT05」よりも大きい(T04>T05,T05<T06)。 Focusing on one wall portion (the wall portion on the left side in the drawing in this example) constituting the ring of the third spacer 3, the individual wall portions are as shown in FIG. 6 (b). In addition, the areas of both the upper end surface 3a and the lower end surface 3b are larger than the horizontal cross-sectional area of the vertical central portion 3c of the spacer 3. That is, the "diameter thickness (length) T04" representing the area of the upper end surface 3a and the "diameter thickness T06" representing the area of the lower end surface 3b are "diameter thickness T06" representing the cross-sectional area of the central portion (3c portion). It is larger than the radial thickness T05 ”(T04> T05, T05 <T06).

これにより、上端面3aの周縁部(セラミック体11側の角部2箇所)または下端面3beの周縁部(ベースプレート12側の角部2箇所)に生じるせん断応力が緩和され、ランニング中に発生するスペーサの剥離、脱落等が抑制されている。 As a result, the shear stress generated at the peripheral edge of the upper end surface 3a (two corners on the ceramic body 11 side) or the peripheral edge of the lower end surface 3be (two corners on the base plate 12 side) is relaxed and is generated during running. Peeling and falling off of the spacer are suppressed.

また、第3スペーサ3においては、セラミック体11の熱膨張率がベースプレート12の熱膨張率に比べて小さいことに対応して、第1スペーサ1Bと同様、上端面3aの径方向厚みT04は、下端面3bの径方向厚みT06よりも大きくなっている。 Further, in the third spacer 3, the radial thickness T04 of the upper end surface 3a is similar to that of the first spacer 1B, corresponding to the fact that the coefficient of thermal expansion of the ceramic body 11 is smaller than the coefficient of thermal expansion of the base plate 12. It is larger than the radial thickness T06 of the lower end surface 3b.

この構造によって、せん断応力を生じ易いセラミック体1側の接合面の「接合力」が向上し、この部位における、ランニング中のスペーサの剥離・脱落等が、より抑制されている。 With this structure, the "bonding force" of the joint surface on the ceramic body 1 side where shear stress is likely to occur is improved, and peeling / falling off of the spacer during running at this portion is further suppressed.

そして、第2スペーサ2と同様、リングの外側周面3cは、円環内側に向かって凹状の曲面で構成され、リングの内側周面3dは、円環外側に向かって凹状の曲面で構成されている。 As with the second spacer 2, the outer peripheral surface 3c of the ring is formed of a concave curved surface toward the inside of the annulus, and the inner peripheral surface 3d of the ring is formed of a concave curved surface toward the outside of the annulus. ing.

以上の構成により、径の大きい第3スペーサ3においても、前述の第1スペーサ1A,1Bおよび第2スペーサ2と、同様の作用効果を奏することができる。 With the above configuration, even in the third spacer 3 having a large diameter, the same action and effect as those of the first spacers 1A and 1B and the second spacer 2 described above can be obtained.

さらに、第3スペーサ3においては、図6(c)に示すように、リングの周方向、少なくとも1箇所の位置に、切り欠き状のスリット3eが設けられている。 Further, in the third spacer 3, as shown in FIG. 6C, notch-shaped slits 3e are provided at at least one position in the circumferential direction of the ring.

これにより、熱によるベースプレート12の膨張・収縮時に、第3スペーサ3が、第3スペーサ3をベースプレート12に接合している樹脂層4(接着剤)により引っ張られる力を緩和することができる。したがって、ランニング中に発生する第3スペーサ3の剥離や脱落等を、より抑制することができる。 As a result, when the base plate 12 is expanded or contracted by heat, the force of the third spacer 3 being pulled by the resin layer 4 (adhesive) that joins the third spacer 3 to the base plate 12 can be relaxed. Therefore, peeling or falling off of the third spacer 3 that occurs during running can be further suppressed.

1A,1B 第1スペーサ
1c,1f 上端面
1d,1g 中央部
1e,1h 下端面
2 第2スペーサ
2a 上端面
2b 下端面
2c 外周面
2d 内周面
3 第3スペーサ
3a 上端面
3b 下端面
3c 外側周面
3d 内側周面
3e スリット
4 樹脂層
10 試料保持具
11 セラミック体(試料保持部材)
11a 上面(試料保持面)
11b 下面
11c 縁部
12 ベースプレート(支持部材)
12a 上面
12b 下面
1A, 1B 1st spacer 1c, 1f Upper end surface 1d, 1g Central part 1e, 1h Lower end surface 2 2nd spacer 2a Upper end surface 2b Lower end surface 2c Outer outer surface 2d Inner peripheral surface 3 Third spacer 3a Upper end surface 3b Lower end surface 3c Outside Peripheral surface 3d Inner peripheral surface 3e Slit 4 Resin layer 10 Sample holder 11 Ceramic body (sample holding member)
11a Top surface (sample holding surface)
11b Bottom surface 11c Edge 12 Base plate (support member)
12a top surface 12b bottom surface

Claims (7)

試料を載置可能な上面と位置固定のための接合に用いられる下面とを有する平板状の試料保持部材と、
平坦面を有する支持部材であって、前記平坦面と前記試料保持部材の前記下面とが対向するように前記試料保持部材を支承する支持部材と、
前記試料保持部材の前記下面と前記支持部材の前記平坦面との間に配置される間隙調整用の第1スペーサと、
前記試料保持部材の前記下面と前記支持部材の前記平坦面との間に配設されて、前記試料保持部材と前記支持部材とを接合する接合材と、を備え、
前記第1スペーサは、樹脂からなる板状または柱状であり、
前記1スペーサの上端面および下端面の少なくとも一方の面積が、前記第1スペーサの上下方向中央部の水平方向断面積よりも大きい、試料保持具。
A flat sample holding member having an upper surface on which a sample can be placed and a lower surface used for joining for fixing a position,
A support member having a flat surface, which supports the sample holding member so that the flat surface and the lower surface of the sample holding member face each other.
A first spacer for adjusting the gap arranged between the lower surface of the sample holding member and the flat surface of the support member, and
A bonding material that is disposed between the lower surface of the sample holding member and the flat surface of the supporting member to join the sample holding member and the supporting member is provided.
The first spacer has a plate shape or a columnar shape made of resin, and
A sample holder in which the area of at least one of the upper end surface and the lower end surface of the one spacer is larger than the horizontal cross section of the vertical center portion of the first spacer.
前記第1スペーサは、前記上端面および前記下端面の面積が、それぞれ、前記上下方向中央部の水平方向断面積よりも大きい、請求項1に記載の試料保持具。 The sample holder according to claim 1, wherein the first spacer has areas of the upper end surface and the lower end surface larger than the horizontal cross section of the central portion in the vertical direction, respectively. 前記第1スペーサは、前記上端面の面積が、前記下端面の面積よりも大きい、請求項1または2に記載の試料保持具。 The sample holder according to claim 1 or 2, wherein the first spacer has an area of the upper end surface larger than the area of the lower end surface. 前記第1スペーサの外周面は、内側に向かって凹状の曲面で構成されている、請求項1から3のいずれか1つに記載の試料保持具。 The sample holder according to any one of claims 1 to 3, wherein the outer peripheral surface of the first spacer is formed of a curved surface that is concave toward the inside. 前記試料保持部材は、ガス導通用の上下方向貫通孔を含み、前記支持部材は、前記上下方向貫通孔に連通するガス供給孔を含み、
前記試料保持部材の前記下面と前記支持部材の前記平坦面との間に、上端面が前記上下方向貫通孔の開口の周囲に当接し下端面が前記ガス供給孔の開口の周囲に当接する、円環状の第2スペーサをさらに備え、
前記第2スペーサは、前記上端面および前記下端面の面積が、それぞれ、前記第2スペーサの上下方向中央部の水平方向断面積よりも大きい、請求項1に記載の試料保持具。
The sample holding member includes a vertical through hole for gas conduction, and the support member includes a gas supply hole communicating with the vertical through hole.
Between the lower surface of the sample holding member and the flat surface of the support member, the upper end surface abuts around the opening of the vertical through hole and the lower end surface abuts around the opening of the gas supply hole. Further equipped with an annular second spacer,
The sample holder according to claim 1, wherein the area of the upper end surface and the lower end surface of the second spacer is larger than the horizontal cross section of the vertical central portion of the second spacer, respectively.
前記第2スペーサの内周面が、円環の外側に向かって凹状の曲面で構成されている、請求項5に記載の試料保持具。 The sample holder according to claim 5, wherein the inner peripheral surface of the second spacer is formed of a curved surface that is concave toward the outside of the annulus. 前記試料保持部材の前記下面の外周縁部と前記支持部材の前記平坦面との間に、前記試料保持部材の外周縁部の形状に沿った、リング状の第3スペーサをさらに備え、
前記第3スペーサは、上下方向に延びるスリットを含む、請求項1または請求項5に記載の試料保持具。
A ring-shaped third spacer that follows the shape of the outer peripheral edge of the sample holding member is further provided between the outer peripheral edge of the lower surface of the sample holding member and the flat surface of the supporting member.
The sample holder according to claim 1 or 5, wherein the third spacer includes a slit extending in the vertical direction.
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7328018B2 (en) 2019-06-13 2023-08-16 新光電気工業株式会社 Substrate fixing device and its manufacturing method
WO2023172434A1 (en) * 2022-03-08 2023-09-14 Lam Research Corporation Encapsulated compression washer for bonding ceramic plate and metal baseplate of electrostatic chucks

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003017551A (en) * 2001-06-28 2003-01-17 Kyocera Corp Wafer supporting member
JP2003258072A (en) * 2002-03-07 2003-09-12 Ngk Insulators Ltd Ceramic/metal joint
JP2011238682A (en) * 2010-05-07 2011-11-24 Ngk Insulators Ltd Wafer mounting device and manufacturing method for the same
JP2011258837A (en) * 2010-06-10 2011-12-22 Fujitsu Ltd Mounting structure, electronic equipment, stress relaxing member, and manufacturing method thereof
JP2016012608A (en) * 2014-06-27 2016-01-21 京セラ株式会社 Junction body and wafer support member using the same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003017551A (en) * 2001-06-28 2003-01-17 Kyocera Corp Wafer supporting member
JP2003258072A (en) * 2002-03-07 2003-09-12 Ngk Insulators Ltd Ceramic/metal joint
JP2011238682A (en) * 2010-05-07 2011-11-24 Ngk Insulators Ltd Wafer mounting device and manufacturing method for the same
JP2011258837A (en) * 2010-06-10 2011-12-22 Fujitsu Ltd Mounting structure, electronic equipment, stress relaxing member, and manufacturing method thereof
JP2016012608A (en) * 2014-06-27 2016-01-21 京セラ株式会社 Junction body and wafer support member using the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7328018B2 (en) 2019-06-13 2023-08-16 新光電気工業株式会社 Substrate fixing device and its manufacturing method
WO2023172434A1 (en) * 2022-03-08 2023-09-14 Lam Research Corporation Encapsulated compression washer for bonding ceramic plate and metal baseplate of electrostatic chucks

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