WO2006070648A1

WO2006070648A1 - Pattern forming method and electronic circuit

Info

Publication number: WO2006070648A1
Application number: PCT/JP2005/023405
Authority: WO
Inventors: Ryohei Satoh; Yoshinori Iwata; Koji Nakagawa; Kenji Tanaka; Satoru Takaki
Original assignee: Asahi Glass Co., Ltd.
Priority date: 2004-12-27
Filing date: 2005-12-20
Publication date: 2006-07-06
Also published as: JPWO2006070648A1; JP4329817B2

Abstract

A pattern forming method by which a number of steps and cost can be reduced without performing wet etching. The pattern forming method is provided with a reflection preventing layer forming step, a reflection preventing layer opening section forming step, a mask layer forming step, a mask layer opening section forming step, a thin film layer forming step, and a peeling step, which are to be performed to a transparent substrate. In a preliminary stage of the reflection preventing layer forming step and in a post stage of the reflection preventing layer opening section forming step or in a post stage of the peeling step, a transparent layer forming step and a transparent layer opening section forming step are provided.

Description

Specification

Pattern forming method and electronic circuit

Technical field

The present invention relates to a pattern forming method provided in an electronic circuit and the like, and an electronic circuit such as a plasma display substrate.

Background art

[0002] A plasma display panel (hereinafter also referred to as "PDP"! /, U) can be thinned and can be easily increased in size, and has features such as light weight and high resolution. It is attracting attention as a strong candidate to replace CRT.

PDPs are broadly divided into DC and AC types, but the operating principle is based on the light emission phenomenon associated with gas discharge. For example, in the AC type, as shown in FIG. 13, the cell space is defined by partition walls 3 formed between the transparent front substrate 1 and the rear substrate 2 arranged opposite to each other to define the cell. Fills with a mixture gas such as He + Xe and Ne + Xe which has low visible light emission and high UV light emission efficiency. Then, plasma discharge is generated in the cell, and the phosphor layer 9A on the cell inner wall is caused to emit light, thereby forming an image on the display screen.

[0003] Generally, the PDP is provided on the front substrate 1 on the display electrode 5 for generating plasma discharge and on a part of the display electrode 5 to reduce the resistance of the display electrode 5. And the dielectric layer 8 and the MgO layer 9 that prevent the display electrode 5 and the display electrode 5 and the bus electrode 6 from being eroded by the plasma and coming into contact with the electrodes formed on the back substrate 2 are also necessary. In response to this, it has a plasma display substrate with black stripes 4 that reduce reflection of external light. Further, an address electrode 7 for writing information is provided on the back substrate 2.

[0004] When manufacturing a PDP, after forming the display electrode 5 on the front substrate 1 using a transparent conductive material, the bus electrode 6 is formed on a part of the display electrode 5 using a conductive material. Form. When the black stripe 4 is provided, the black stripe 4 is further formed. Next, the dielectric layer 8 and the MgO layer 9 are formed (see Patent Document 1, Non-Patent Document 1, and Non-Patent Document 2). [0005] By the way, when forming the display electrode 5, the bus electrode 6 and the like, a thin layer formed using a conductive material is processed into a predetermined shape. As a method for processing the shape of the thin layer, wet etching using a resist is employed.

However, the processing of the thin layer by wet etching is performed by first forming a resist layer on the thin layer, then exposing and developing the resist layer to form openings in the resist layer, and then etching solution. This is done by etching the thin layer exposed in the opening using, and finally peeling off the resist layer.

[0006] In addition, since wet etching is performed each time a member such as the display electrode 5 and the bus electrode 6 is formed, a single PDP is manufactured a plurality of times.

Therefore, when the thin film is processed into a predetermined shape by wet etching, the number of processes required for manufacturing the PDP becomes enormous. When the number of processes is large, the number of operations required for manufacturing increases, resulting in inconveniences such as an increase in complicated operations and an increase in cost.

[0007] In addition, it has been proposed to form the black stripe 4 on the front substrate 1 in order to further improve the contrast and make the image clearer.

However, the black stripe 4 is formed in a separate process from the display electrode 5 and the bus electrode 6. Also, when the black stripe 4 is formed, it is necessary to obtain a predetermined shape by wet etching. Therefore, the number of processes required for manufacturing the PDP is further increased by forming the black stripe 4.

[0008] In addition, since the etchant used for wet etching exhibits strong acidity and strong alkalinity, for example, if it is discarded as it is, it has problems such as a large environmental load and is difficult to handle. Therefore, when wet etching is performed when manufacturing a PDP, it becomes necessary to perform complicated work associated with the handling of the etching solution, and the number of processes required for manufacturing further increases.

[0009] Further, wet etching is used when forming a pattern of an electronic circuit other than the above-described PDP.

Electronic circuit patterns have become more complex in order to cope with the rapidly advanced information society in recent years. Therefore, as the pattern becomes more complex, the number of processes by performing wet etching has increased significantly even when manufacturing electronic circuits. Inconveniences such as an increase in complicated work and an increase in cost occur.

Patent Document 1: Japanese Patent Laid-Open No. 7-65727

Non-Patent Document 1: Tatsuo Uchida and Taira Uchiike, “Flat Panel Display Display Dictionary”, Industrial Research Committee, December 25, 2001, p. 583-585

Non-Patent Document 2: Ken Okumura, “Flat Panel Display 2004 Practice”, Nikkei Business Publications, p. 176-183

Disclosure of the invention

Problems to be solved by the invention

[0010] The present invention has been proposed in view of the above-described conventional situation, and provides a pattern forming method capable of reducing the number of steps without performing wet etching and reducing the cost. The purpose is to do. It is another object of the present invention to provide an electronic circuit having a pattern formed by this forming method.

Means for solving the problem

In order to solve the above-described problems, the present invention provides a pattern forming method and an electronic circuit shown in the following (1) to (17).

[0012] (1) An antireflection layer forming step of forming an antireflection layer on one main surface side of the transparent substrate, and an antireflection layer that forms an opening by irradiating the antireflection layer with the first laser beam A mask layer forming step for forming a mask layer on the one main surface side of the transparent substrate, and a mask layer for forming an opening in the mask layer after the opening forming step and the antireflection layer opening forming step. An opening forming step, a thin film layer forming step of forming a thin film layer on the one main surface side of the transparent substrate, and a subsequent step of the thin film layer forming step after the mask layer opening forming step. A separation step of separating the transparent substrate from the transparent substrate, the one main surface of the transparent substrate before the antireflection layer forming step, after the antireflection layer opening forming step, or after the peeling step. A transparent layer forming step for forming a transparent layer on the side, and the transparent Downstream of the forming process, and a transparent layer opening portion forming step of irradiating a second laser beam to form an opening in the transparent layer pattern forming method.

[0013] (2) The mask layer forming step includes an ultraviolet curable resin coating step of applying an ultraviolet curable resin to the one main surface side of the transparent substrate, and the transparent substrate with respect to the ultraviolet curable resin. The pattern forming method according to (1), further comprising: an ultraviolet resin curing step of irradiating ultraviolet rays from the other main surface side of the plate to cure the ultraviolet cured resin.

(3) In the peeling step, the pattern formation according to (1) or (2), wherein the mask layer is irradiated with a third laser beam to peel off the force on the transparent substrate. Method.

[0015] (4) The pattern forming method according to (3), wherein the third laser beam has a wavelength of 500 to 1500 nm and an energy density of 0.1 J / cm ² or more and less than ljZcm ² .

[0016] (5) The antireflection layer includes a first antireflection layer containing chromate oxide and Z or titanate oxide, and a second antireflection layer containing metal chromium and Z or metal titanium. The pattern forming method according to any one of (1) to (4), comprising:

[0017] (6) The pattern forming method according to any one of (1) to (5), wherein the mask layer is formed using an organic material.

[0018] (7) The pattern forming method according to any one of (1) to (6), wherein the mask layer contains a black pigment or a black dye.

[0019] (8) the first laser beam is a wavelength force 00～1500Nm, the energy density is less than LjZcm ² or more 2JZcm ^2, wherein (1) to (7), pattern formation according to any deviation Method.

(9) The second laser beam has a wavelength power of 00 to 1500 nm and an energy density of 2 to 40 J.

A ZCM ^2, wherein (1) - (8) The pattern forming method according to any misalignment.

[0021] (10) The pattern forming method according to any one of (1) to (9), wherein the thin film layer includes metal chromium and Z or metal titanium, and metal copper.

[0022] (11) The pattern forming method according to any one of (1) to (10), further including a protective layer forming step of forming a protective layer after the thin film layer forming step.

[0023] (12) An electronic circuit comprising a pattern formed by the pattern forming method according to any one of (1) to (11).

[0024] (13) An electronic device having the electronic circuit according to (12).

[0025] (14) A method for forming a plasma display substrate, comprising a step of forming a pattern by the pattern forming method according to any one of (1) to (11).

[0026] (15) A first antireflection layer made of chromate and Z or titanate on one main surface side of the transparent substrate, and a second antireflection made of metal chromium and Z or metal titanium. Layers, A pattern with a thin film layer that also has metallic copper power and a transparent layer that also has SnO power

2

Plasma display substrate with play substrate electrodes and Z or black stripes.

[0027] (16) The plasma display substrate according to (15), wherein the electrode and Z or the black stripe have a visible light reflectance of 50% or less incident from the other main surface side of the transparent substrate.

[0028] (17) A plasma display panel comprising the plasma display substrate according to (15) or (16). The invention's effect

[0029] According to the pattern forming method of the present invention, since the antireflection layer also serves as a mask when forming the opening in the mask layer, the mask for forming the opening in the mask layer is formed. It is possible to form an opening in the mask layer. Therefore, according to the present invention, since wet etching is not performed, it is possible to form a pattern having a transparent layer and a thin film layer on a transparent substrate with fewer steps than in the past.

Therefore, according to the present invention, a pattern having a transparent layer and a thin film layer can be efficiently formed at a low cost on a transparent substrate. Further, an electronic circuit including a transparent substrate on which a pattern having a transparent layer and a thin film layer is formed can be efficiently formed at low cost.

[0030] In the conventional method, when the thin film layer is thick, it is difficult to directly pattern the thin film layer by irradiating the thin film layer with laser light because of the relationship between the laser output and the fracture energy density of the transparent substrate. However, according to the present invention, direct patterning is possible even when the thin film layer is thick.

Furthermore, according to the present invention, it is possible to form a pattern using a transparent layer and a pattern using a thin film layer without performing wet etching.

Therefore, according to the present invention, since it is not necessary to use an etching solution exhibiting strong acidity or strong alkalinity, when forming an electronic circuit including a pattern using a transparent layer and a pattern using a thin film layer, It is possible to reduce troublesome work caused by handling the etching solution. Also, the number of processes by wet etching It is possible to suppress the increase in.

[0032] When the plasma display substrate is formed by the pattern forming method of the present invention, the plasma display substrate black stripe and the plasma display substrate electrode (display electrode and bus electrode) are simultaneously formed. be able to.

In addition, by forming an antireflection layer on the transparent substrate, it is possible to avoid the appearance of bus electrodes and black stripes when an image is displayed using the plasma display substrate as a PDP.

Brief Description of Drawings

FIG. 1 (A) to (D) are schematic views showing a transparent layer forming step and a transparent layer opening forming step in the pattern forming method of the present invention.

FIGS. 2E to 2H are schematic views showing an antireflection layer forming step and an antireflection layer opening forming step in the pattern forming method of the present invention.

FIG. 3 (I) to (N) show a mask layer forming step, a mask layer opening forming step, a thin film layer forming step, and a peeling step in the pattern forming method of the present invention. FIG.

FIG. 4 is a cross-sectional view showing a state in which a light absorption thin film is formed between a mask layer and a transparent substrate.

FIG. 5 is a cross-sectional view showing a state in which a protective layer is formed on the thin film layer.

[FIG. 6] FIG. 6 (A) is a cross-sectional view showing a state in which a reflective layer, a transparent layer, and a thin film layer are formed in this order, and FIG. 6 (B) is a diagram showing the reflective layer, the thin film layer, and the transparent layer in this order. It is sectional drawing which shows the state formed.

[FIG. 7] FIG. 7 shows an electrode for a plasma display substrate according to the present invention and an electrode for a plasma display substrate formed by a preferred embodiment of the method for forming a Z or black stripe and a substrate having a Z or black stripe. It is a schematic plan view.

FIG. 8 is a schematic cross-sectional view taken along the line AA ′ of the substrate shown in FIG.

[FIG. 9] FIGS. 9 (A) and 9 (B) show a transparent layer forming step and a transparent layer opening forming step among the steps of forming electrodes for plasma display substrates and Z or black stripes in Examples. FIG.

[FIG. 10] FIGS. 10 (C) to (E) show the electrodes and electrodes for the plasma display substrate in the example. FIG. 6 is a schematic view showing an antireflection layer forming step and an antireflection layer opening forming step in the step of forming z or black stripe.

[FIG. 11] FIGS. 11 (F) to (H) show a mask layer forming step and a mask layer opening forming step among the steps of forming electrodes for plasma display substrates and Z or black stripes in the examples. FIG.

[FIG. 12] FIGS. 12 (I) to (K) show a thin film layer forming step, a protective layer forming step, and a peeling step among the steps of forming electrodes for plasma display substrates and Z or black stripes in Examples. FIG.

FIG. 13 is a schematic diagram showing a schematic configuration of a conventional PDP.

Explanation of symbols

1 Front board

2 Back board

3 Bulkhead

4 Black stripe

5 Display electrode

6 Bath electrode

7 Address electrode

8 Dielectric layer

9 MgO layer

11 Phosphor layer

20 Transparent substrate

21 Transparent layer

22 Photomask

23 First antireflection layer

24 Second antireflection layer

25 Photomask

27 Antireflection layer 30 mask layers

31 Light-absorbing thin film

34 Protective layer

41 bus electrode

42 Black stripe

43 Display electrode

70 Glass substrate

80 Sputter deposition system

81 Transparent layer

82 Photomask

83 First antireflection layer

84 Second antireflection layer

85 Antireflection layer

86 photomask

88 Mask Hoinolem

90 film laminator

92 UV curing equipment

94 Thin film layer

95 Protective layer

LI 1st laser beam

L2 Second laser beam

L3 3rd laser beam

UV UV

BEST MODE FOR CARRYING OUT THE INVENTION

[0035] Hereinafter, the present invention will be described in detail. The following description is an example of the present invention.

However, the present invention is not limited to this.

The pattern forming method of the present invention will be described with reference to FIGS. 1 and 2. First, a transparent layer 21 is formed on one main surface side of the transparent substrate 20 (FIG. 1 (A) · (B): transparent layer forming step), Thereafter, the transparent layer 21 is irradiated with the second laser beam L2 through the photomask 22 to form an opening in the transparent layer 21 (FIG. 1 (C) · (D): transparent layer opening forming step) ).

Next, an antireflection layer 27 is formed by sequentially forming a first antireflection layer 23 and a second antireflection layer 24 on the one main surface side of the transparent substrate 20 (FIG. 2 (E ) · (F): Anti-reflection layer formation process), and then the first anti-reflection layer 23 and the second anti-reflection layer 24 are irradiated with the first laser beam L1 through the photomask 25 to produce the first reflection. Openings are formed in the prevention layer 23 and the second antireflection layer 24. (Fig. 2 (G) · (H): Antireflection layer opening forming process).

Next, a mask layer 30 is formed on the transparent layer 21 and the second antireflection layer 24 (FIG. 3 (I): mask layer forming step), and then the other of the transparent substrate 20 is formed on the mask layer 30. The main surface side is exposed to ultraviolet rays UV, exposed and developed to form an opening in the mask layer 30 (FIG. 3 CF) · (K): mask layer opening forming step).

Next, after forming the thin film layer 28 on the second antireflection layer 24 and the mask layer 30 (FIG. 3 (L): thin film layer forming step), the other principal surface side force is also applied to the mask layer 30 with the third main surface side force. When the laser beam L3 is applied, the mask surface 30 is also peeled off by the one main surface side force of the transparent substrate 20 (FIG. 3 (M) · (N): peeling step

) o

[0040] Through such a forming process, the transparent layer 21, the first antireflection layer 23, the second antireflection layer 24, and the thin film layer 28 were patterned on the one main surface side of the transparent substrate 20. A pattern can be formed.

[0041] <Transparent substrate>

The transparent substrate 20 is formed of a transparent material (in the present invention, a material having a visible light transmittance of 80% or more as defined in JISR3106 (1998))!ヽ. A specific example of the transparent substrate 20 is preferably a glass substrate. In particular, a glass substrate having a thickness of 0.7 to 3 mm is preferred as a glass substrate for PDP.

In the present invention, of both main surfaces of the transparent substrate 20, the main surface on the side where the transparent layer 21, the first antireflection layer 23, the second antireflection layer 24, the thin film layer 28, and the like are formed. Is referred to as one main surface, the transparent layer 21, the first antireflection layer 23, the second antireflection layer 24, the thin film layer 28, etc. are not formed! The main surface on the side is the other main surface.

[0043] <Transparent layer forming step> In the transparent layer forming step, the transparent layer 21 is formed on the one main surface side of the transparent substrate 20. The material used for forming the transparent layer 21 is not particularly limited as long as it is a conductive material having transparency, and a stannate such as ITO (Indium Tin Oxide) or acid tin (SnO) is used. Use

2

Can do. From the viewpoint of preventing erosion by dielectrics, it is preferable to use SnO, especially S

2

It is preferable to use SnO containing 2 to 8% by mass of b. The transparent layer is the second layer described later.

2

It is preferable to peel off by laser ablation with one light. The transparent layer preferably has a visible light transmittance of 80% or more as defined in JISR 3106 (1998).

[0044] The transparent layer 21 is preferably formed by sputtering or vapor deposition. The thickness of the transparent layer 21 is preferably from 0.1 to 3 πι, from 0.1 to 1 111, particularly from 0.1 to 0.5 m. When used as a display electrode, the thickness of the transparent layer 21 is preferably 0.1 to 3 μm from the viewpoint of conductivity and transparency. In order for the transparent layer 21 to have the above-mentioned thickness, it can be adjusted by controlling the film formation time by sputtering or vapor deposition.

The transparent layer 21 uses, for example, a transparent layer forming material such as ITO or SnO as a target.

2

Formed by mixing a sputtering gas such as O with Ar or the like and performing sputtering.

2

The

[0045] Transparent layer opening forming step>

In the transparent layer opening forming step, for example, the second laser beam L2 such as an excimer laser beam or a YAG laser beam is used in combination with the ablation and heat energy to evaporate and remove the formed transparent layer 21. Form.

[0046] The second laser light L2 is applied to the transparent layer 21 through the photomask 22. As a result, only the second laser beam L2 that has passed through the opening provided in the photomask 22 is transparent layer 2.

1 is irradiated, and the transparent layer 21 is covered according to the shape of the photomask 22.

[0047] In forming the opening in the transparent layer opening forming step of the present invention, the second laser light L2 used preferably has an energy density of 2 to 2 having a wavelength of 500 to 1500 nm.

It is more preferably preferably tool 2~5j / cm ² is 40j / cm ^2. Second laser beam

L2 may be noless or CW (continuous light).

As such a laser beam, specifically, a YAG laser beam having a wavelength of 1064 nm, Examples include 532 nm YAG laser light.

By irradiating the transparent layer 21 with such second laser light L2, it is possible to reliably open the opening without leaving the transparent layer 21 on the surface of the transparent substrate 20 exposed to the opening with only a very short time of irradiation. Can be formed.

[0048] <Antireflection layer forming step>

In the antireflection layer forming step, an antireflection layer is formed on the one main surface side of the transparent substrate 20. The antireflection layer preferably has the first antireflection layer 23 and the second antireflection layer depending on the requirements of the optical low reflection condition. In particular, the first antireflective layer 23 having chromic acid and Z or titanic acid strength, metal chromium (hereinafter also referred to as “Cr”), and Z or metal titanium (hereinafter also referred to as “Ti”). It is preferable to form the antireflection layer 27 by sequentially forming the second antireflection layer 24 made of. In addition, the antireflection layer is preferably a layer that can be peeled off by using the first laser beam L1 described later and using a combination of abrasion and thermal energy! /.

By forming the antireflection layer, visible light reflected by the first antireflection layer 23 and visible light reflected by the second antireflection layer 24 interfere with each other. When the image is displayed as a PDP, it is possible to avoid the appearance of a nose electrode or black stripe in the image.

[0049] <First antireflection layer>

In the present invention, the material of the first antireflection layer 23 preferably contains chromate oxide and Z or titanate oxide. In particular, the material of the first antireflection layer 23 is preferably chromic oxide in that it can prevent the oxidation of Cu, which is a highly durable electrode material, and can easily provide reflective performance. If 95 mass% or more of chromic acid compound and Z or titanic acid compound is contained in the entire material forming the first antireflection layer 23, it is preferable as the antireflection layer in the present invention. ,.

[0050] Here, the chromium oxide is oxygen deficient, such as Cr 2 O 3 or oxygen deficient CrO.

2 3 X

Including (1. 0≤X <1.5). Chromium oxide is oxygen-deficient CrO (1. 0≤X <1.5)

X

It is particularly preferable that the reflection characteristics are good.

In addition, titanic acid oxide is TiO that is not deficient in oxygen, or oxygen deficient TiO (1 Including 0≤X <2.0). Titanium oxide is oxygen deficient TiO (1. 0≤X <2. 0)

X

In particular, the reflection characteristics are good, which is particularly preferable.

[0051] The first antireflection layer 23 may further contain carbon, nitrogen, or the like. By incorporating carbon and Z or nitrogen into the material forming the first antireflection layer 23, the extinction coefficient and the refractive index of the film can be finely adjusted, so that it matches the optical characteristics of the second antireflection layer 24. By doing so, the visible range force is also preferable in that the antireflection characteristic can be easily made good in the laser wavelength range used in the present invention. When chromium oxide contains nitrogen, the first anti-reflection layer 23 has a thread length of 0.3 ≤ Y ≤ 0.55, 0.03 ≤ ≤ ≤ 0.

1-Υ-Ζ Υ ζ

Chromates that are preferably 2 include these nitrogen-containing chromium oxides.

[0052] The thickness of the first antireflection layer 23 is preferably 30 to: LOOnm. 30 ~: If LOOnm, anti-reflection property can be good. In addition, the thickness should be appropriately adjusted within the above range from the refractive index and extinction coefficient of the film.

[0053] The first antireflection layer 23 is preferably substantially transparent, and the refractive index at a wavelength of 550 nm is preferably 1.9 to 2.8. 1.9 to 2 4 is more preferable. Within this range, the reflected light from the first antireflection layer 23 and the reflected light from the second antireflection layer 24 interfere with each other, so that the reflectance of the visible light incident on the antireflection layer 27 is low. Become. “Substantially transparent” means that the extinction coefficient is 1.5 or less, more preferably 0.7 or less. Thus, sufficient light interference can be generated. Further, the first antireflection layer 23 may have a structure in which a plurality of films are stacked. Specifically, the substrate strength is exemplified by sequentially laminating acid chromium and chromium nitride.

[0054] <Second antireflection layer>

In the present invention, the second antireflection layer 24 preferably contains Cr and / or Ti. In particular, the material of the second antireflection layer 24 is preferably Cr in that it can prevent the oxidation of Cu, which is a highly durable electrode material, and easily achieves reflection performance. If Cr, Z, or Ti is contained in an amount of 95% by mass or more based on the entire material forming the second antireflection layer 24, the antireflection characteristics can be improved.

The second antireflection layer 24 may further contain carbon, nitrogen, or the like. Carbon and Z In addition, by adding nitrogen to the material forming the second antireflection layer 24, the extinction coefficient and the refractive index of the film can be finely adjusted, so that it can be made visible by matching the optical characteristics of the second antireflection layer 24. The local power is also preferable in that the antireflection characteristics can be easily improved in the laser wavelength range used in the present invention.

[0055] The second antireflection layer 24 in the present invention is preferably substantially opaque in the visible light region where it is preferable that the light transmittance is low. Substantially opaque means that the visible light transmittance is 0.0001-0. 1%. The thickness of the second antireflection layer 24 is preferably 10 to 200 nm, particularly 20 to 100 nm in terms of antireflection characteristics and patterning properties. Further, it is more preferable that the second antireflection layer 24 contains Cr, so that the second antireflection layer 24 serves as a protective layer for a thin film layer formed on the second antireflection layer 24. If the material of the thin film layer is copper, the second antireflection layer 24 containing Cr functions more effectively as a protective layer, which is more preferable.

[0056] As with the transparent layer 21, the first antireflection layer 23 and the second antireflection layer 24 in the present invention are formed by sputtering or vapor deposition. In order to form the Cr layer, which is the second antireflection layer 24, by sputtering, sputtering may be performed using a Cr target in an inert atmosphere such as Ar. The same applies when forming a Ti layer. Here, N or CH may be mixed with Ar or the like for sputtering.

twenty four

In addition, in order to form the chromate oxide layer as the first antireflection layer 23, a chromium target can be used in addition to a sputtering method using a Cr target in an atmosphere containing oxygen. Is possible. The same applies when the titanium oxide layer is formed. Here, sputtering may be performed by mixing N, CH, CO, or the like with Ar or the like.

2 4 2

[0057] The thicknesses of the first antireflection layer 23 and the second antireflection layer 24 can be adjusted by controlling the film formation time by sputtering, vapor deposition, or the like, as with the transparent layer 21.

[0058] The antireflection layer forming step in the present invention is not limited to an embodiment in which only two layers of the first antireflection layer 23 and the second antireflection layer 24 exemplified in the preferred embodiment are formed. In addition to these two layers, one or more layers may be formed.

In the antireflection layer opening forming step, for example, excimer laser light, YAG laser light, etc. By using the first laser beam L 1 in combination with abrasion and thermal energy, the first antireflection layer 23 and the second antireflection layer 24 are removed by evaporation to form an opening. The first laser light L1 is applied to the first antireflection layer 23 and the second antireflection layer 24 through the photomask 25. As a result, only the first laser light L1 transmitted through the opening provided in the photomask 25 is irradiated to the first antireflection layer 23 and the second antireflection layer 24, and the first antireflection layer 23 and the second antireflection layer are irradiated. Layer 24 is calo- lated according to the shape of photomask 25.

In FIG. 1 (G), the first anti-reflection layer 23 and the second anti-reflection layer 24 are irradiated with the first laser beam L1 also with the other main surface side force of the transparent substrate 20. Irradiate from the main surface.

[0060] The first laser beam L1 is an excimer laser beam, a YAG laser beam, or the like, and is a third laser beam (for example, a wavelength of 500 to 1500 nm and an energy density of 0. It is preferable that the energy density is higher than that of the laser beam of lj / cm ² or more and less than lj / cm ^2, for example, the wavelength power is 00 to 1500 nm, and the energy density is ljZcm ² or more and less than 2jZcm ² . By setting the energy density of the laser light within the above range, an opening that does not affect the transparent layer 21 can be formed. The energy density is the total energy density of the irradiated pulses when the number of laser pulses is plural, and so on.

Further, the pattern width of the antireflection layer 27 is determined by the shape (width) of the photomask 25 used in the antireflection layer opening forming step. Therefore, the pattern width is preferably determined in consideration of the balance between the desired contrast and brightness. If the pattern width is too thick, when used as a PDP, the light emitted from the PDP itself is blocked, so that the image displayed on the PDP cannot secure sufficient luminance.

[0062] <Mask layer forming step>

In the mask layer forming step, the mask layer 30 is formed on the one main surface side of the transparent substrate 20.

[0063] The mask layer 30 may be formed using a material that is photopolymerized and cured by ultraviolet ray UV irradiation (exposure), which will be described later, and the cured product does not dissolve in the developer, for example, an ultraviolet curable resin. preferable. Also, laser ablation is performed by irradiation of the third laser beam L3, which will be described later. It is preferable that it can be raised and easily peeled off from the transparent substrate 20.

[0064] The material used for such a mask layer 30 (hereinafter also referred to as "mask layer forming material") is preferably an organic material. By forming the mask layer 30 using an organic material, the mask layer 30 can be sufficiently separated even when irradiated with the third laser light L3 having a low energy density.

[0065] Examples of such organic materials include epoxy resin, polyethylene resin, polyimide resin, polyester resin, tetrafluorinated styrene resin, acrylic resin, and the like.

By using such an organic material, the third laser beam L3 having a wavelength of 500 to 15 OOnm and an energy density of 0.1 lj / cm ² or more and less than lj / cm ² is used in the peeling process described later. The mask layer 30 can be reliably peeled from the transparent substrate 20 without damaging the antireflection layer 23, the second antireflection layer 24, the thin film layer 28, and the like.

By the way, in order to surely peel the mask layer 30 from the transparent substrate 20 in the peeling step described later, it is preferable to cause laser abrasion in the mask layer 30. 30 preferably absorbs laser light sufficiently.

[0067] The thickness of the mask layer 30 is preferably 6 to 25 μm, more preferably 7 to 15 m, and even more preferably 7 to: LO m.

Such a mask layer 30 can be formed by a commonly used method, for example, a method of applying a mask layer forming material to the one main surface side of the transparent substrate 20 using a coater or the like. In order to achieve this, it is preferable to apply a film-like mask layer forming material to the surface of the transparent substrate 20 using a film laminator or the like.

[0068] In order to sufficiently absorb the laser beam in the mask layer 30, the mask layer 30 may contain a pigment or a dye as the first method, or the second method may include a mask as shown in FIG. It is preferable to form a light-absorbing thin film 31 formed using an organic material containing a pigment or a dye between the layer 30 and the transparent substrate 20.

[0069] As a first method, by incorporating a pigment or a dye into the mask layer 30, the absorptance with respect to the third laser light L3 as described later increases, so that laser ablation is likely to occur, and transparent The mask layer 30 can be easily peeled from the substrate 20. As a pigment to be contained in the mask layer 30 and the light absorbing thin film 31, a black pigment is preferred because of its absorbability. Black dye is preferred as a material.

In addition, the laser layer has a low energy density (for example, about 0.1 lj / cm ² or more and less than lj / cm ² ). Even if the third laser beam L3 is irradiated, laser ablation occurs, and the mask is removed from the transparent substrate 20. Layer 30 is easily peeled off.

[0070] When the black pigment or black dye is contained in the mask layer 30, the content is preferably 10 to 95% by mass from the viewpoint of absorption and function as a mask, and is 20 to 90% by mass. More preferably.

If the mask layer 30 is formed of a material containing a black pigment or a black dye in such a range, laser ablation is likely to occur, so that the mask layer 30 can be easily peeled off from the transparent substrate 20.

In addition, as a second method, as shown in FIG. 4, by forming the light absorbing thin film 31 between the mask layer 30 and the transparent substrate 20, the light absorbing thin film 31 efficiently transmits the laser light. In order to absorb, in the mask layer 30, the absorption of the laser beam at the interface with the light absorption thin film 31 increases, and laser abrasion is likely to occur. Therefore, the mask layer 30 is easily peeled from the transparent substrate 20.

Further, even when the third laser beam L3 having a low energy density (for example, about 0.1 to 0.5 jZcm ² ) is irradiated, laser abrasion occurs and the mask layer 30 is easily peeled off from the transparent substrate 20. The light absorbing thin film 31 itself is also peeled off from the transparent substrate 20 by laser ablation.

[0072] The content of the black pigment or black dye in the light-absorbing thin film 31 is preferably 30 to 95% by mass, more preferably 50 to 90% by mass in terms of absorbability.

If the light absorbing thin film 31 is formed of a material containing a black pigment or black dye in such a range, the mask layer 30 increases the absorption of laser light at the interface with the light absorbing thin film 31. . Therefore, the mask layer 30 is likely to cause laser abrasion at the interface with the light absorbing thin film 31, and therefore can be easily peeled off from the transparent substrate 20.

[0073] The thickness of the light-absorbing thin film 31 is preferably 0.5 to 3 µm, more preferably 1 to 1.5 µm. With such a thickness, the ultraviolet ray UV passes through the light-absorbing thin film 31, so that the mask layer 30 is sufficiently cured in the mask layer opening forming step described later. The

[0074] The black pigment or black dye contained in the mask layer 30 and the light absorption thin film 31 is not particularly limited as long as it is a compound that increases the absorption rate of the mask layer 30 with respect to the first laser light L1, and specific examples thereof are as follows. Suitable examples include carbon black, titanium black, bismuth sulfide, iron oxide, azo acid dyes (for example, CI Mordant Blackl7), disperse dyes, and cationic dyes. Of these, carbon black and titanium black power are more preferred because they have a high absorption rate for all laser beams.

[0075] By using such a material containing a black pigment or black dye as a mask layer forming material, a wavelength of 500 to 1500 nm and an energy density of 0.1 lj / cm ² or more are used in the peeling process described later. Irradiation of 1 to 5 pulses of the third laser beam L3 that is less than / cm ² damages the first antireflection layer 23, the second antireflection layer 24, the thin film layer 28, etc. that remain on the transparent substrate 20. The mask layer 30 can be peeled off from the transparent substrate 20 without fail.

[0076] Further, the use of the organic material containing such a black pigment or black dye is used as a mask layer forming material, the wavelength force S500～1500nm, energy density and 0. 1~0. 5j / cm ^2, Even the third laser beam L3 having a low energy density has the same effect.

In the mask layer opening forming step, the mask layer 30 is exposed by irradiating UV light UV on the other main surface side force of the transparent substrate 20, and then developed to form the opening. Since the first antireflection layer 23 and the second antireflection layer 24 do not transmit ultraviolet rays UV, the mask layer 30 formed on the second antireflection layer 24 is not photopolymerized and cured by exposure. Therefore, an opening is formed in the mask layer 30 on the second antireflection layer 24 by development after exposure.

[0078] <Thin film layer forming step>

In the thin film layer forming step, the thin film layer 28 is formed on the one main surface side of the transparent substrate 20.

The thin film layer forming material for forming the thin film layer 28 is not particularly limited as long as it functions as an electrode. For example, it is preferable to use Cu, Ag, Al, Au, etc. It is particularly preferable to use it. The thin film layer 28 is preferably made of Cu as a main component because it is highly conductive and inexpensive as a material. Specifically, the thin film layer 28 preferably contains 85% by mass or more of Cu.

The thin film layer 28 using such a thin film layer forming material is formed by a normal sputtering method or vapor deposition method, as with the transparent layer 21. The thickness of the thin film layer 28 is preferably 1 to 4 μm, particularly 2 to 4 μm, in terms of patterning properties. If the thickness is in the above range, it is preferable because the conductivity can be good even when the pattern formed in the present invention is used for PDP. In addition, the thickness of the thin film layer 28 can be adjusted by controlling the film formation time such as the sputtering method or the vapor deposition method in the same manner as the transparent layer 21.

When the thin film layer 28 and the antireflection layer 27 are used as plasma display substrate electrodes and Z or black stripes for plasma display, the thin film layer 28 and the antireflection layer 27 may be covered with a dielectric. The resistance of the electrode of the present invention and the dielectric of the Z or black stripe is preferable because it can be further improved by the following two methods.

As shown in FIG. 5, the first method is to include a protective layer forming step of forming a protective layer 34 on the upper surface of the thin film layer 28 after the thin film layer forming step. Specifically, the protective layer 34 preferably contains Cr and Z or Ti as a main component. Specifically, the protective layer 34 preferably contains 95 mass% or more of Cr and Z or Ti. This method is preferable because the dielectric does not directly contact the thin film layer 28 and the thin film layer 28 is less likely to be eroded.

The protective layer 34 is formed by a sputtering method or a vapor deposition method in the same manner as the transparent layer 21. In addition, the thickness of the protective layer 34 is preferably 0.05 to 0.2 m. With this thickness, the thin film layer 28 can be prevented or suppressed from being eroded by the dielectric. As with the transparent layer 21, the thickness of the protective layer 34 can be adjusted by controlling the film formation time, such as sputtering or vapor deposition.

[0084] The second method is a method in which the thin film layer 28 contains Cr and Z or Ti. This is because Cr and Ti are highly resistant to dielectrics. Specifically, the thin film layer 28 includes a layer containing Cr and Z or Ti and Cu.

Cr and / or Ti 5 to 15% by mass with respect to the entire material constituting thin film layer 28 In this case, the thin film layer 28 is preferable because it has sufficient resistance to the dielectric and the conductivity is maintained.

The thin film layer 28 containing Cr and Z or Ti is formed by sputtering or vapor deposition using the thin film layer forming material containing Cr and Z or Ti.

[0085] <Peeling step>

In the peeling step, the mask layer 30 is irradiated with the third laser light L3 to peel off the mask layer 30 from the transparent substrate 20. When the mask layer 30 is irradiated with the third laser beam L3, the mask layer 30 evaporates by the combined use of the abrasion and the heat energy. As a result, the mask layer 30 is peeled off from the transparent substrate 20.

As the type of the third laser light L3, excimer laser light, YAG laser light, or the like can be used in the same manner as in the above-described antireflection layer opening forming step.

The third laser beam L3 preferably has a wavelength power of 00 to 1500 nm and an energy density of 0.1 J / cm ² or more and less than lj / cm ² . If the wavelength and energy density of the third laser beam L3 are within the above ranges, the first antireflection layer 23, the second antireflection layer 24, the thin film layer 28, etc. remaining on the transparent substrate 20 are not damaged. The mask layer 30 can be reliably peeled from the transparent substrate 20.

In addition, as shown in FIG. 3 (M), when the thin film layer 28 is formed on the mask layer 30, the other main surface side force of the transparent substrate 20 also causes the third laser light L3 to be emitted. Compared with the irradiation with the third laser beam L3, the one main surface side force of the transparent substrate 20 is more reliably irradiated and the mask layer 30 can be peeled off from the transparent substrate 20 with less residue. it can. Therefore, it is preferable that the other main surface side force of the transparent substrate 20 is also irradiated with the third laser light L3.

By the method described above, a pattern in which the transparent layer Z antireflection layer Z thin film layer is patterned in the order of the transparent substrate force can be formed. In consideration of the patterning order, the energy density of each laser is preferably in the order of second laser light> first laser light> third laser light. Further, it is preferable that the energy density of each laser beam has a difference of 0.8 jZcm ² or more from each other in consideration of patterning accuracy.

[0088] <Adhesive strength reduction process>

In addition, the adhesiveness between the mask layer 30 and the transparent substrate 20 is reduced immediately before the peeling process. (Hereinafter collectively referred to as “reducing adhesiveness”), a process of reducing these adhesiveness by irradiating light (hereinafter referred to as “adhesion reducing process” t ヽぅ) It may be provided.

After forming the thin film layer 28 on the mask layer 30, the mask layer 30 is irradiated with light from the other principal surface side of the transparent substrate 20. The light applied to the mask layer 30 is preferably ultraviolet light. Thereby, the mask layer forming material is decomposed and deteriorated. As a result, the adhesion between the mask layer 30 and the transparent substrate 20 decreases. Therefore, in this case, as the mask layer forming material, it is preferable to use a material containing a component that decomposes or deteriorates when irradiated with light.

Furthermore, when the types of mask layer forming materials are different, irradiation may be performed using light having a wavelength corresponding to each mask layer forming material. Thereby, the mask layer 30 can be easily peeled off even by the force of the transparent substrate 20 and the residue after peeling can be reduced.

In addition to the first antireflection layer 23, the second antireflection layer 24, and the thin film layer 28, one or more other thin film layers may be formed. For example, before the formation of the first antireflection layer 23, between the formation of the first antireflection layer 23 and the formation of the second antireflection layer 24, after the formation of the second antireflection layer 24 and the formation of the mask layer 30. Another thin film layer may be formed before or after the mask layer 30 is peeled off.

[0092] In addition, the present invention may add, for example, a step of appropriately changing the order of the steps in the preferred embodiment or forming another thin film.

[0093] By the pattern forming method of the present invention, a pattern having a first antireflection layer, a second antireflection layer, a thin film layer, and a transparent layer can be formed on one main surface side of the transparent substrate. . Particularly preferably, the first antireflection layer made of chromate and Z or titanate, the second antireflection layer made of metal chromium and Z or metal titanium, and the thin film layer made of metal copper. And a pattern having a transparent layer that also has SnO force. Figure 1

2

In (5) to (5), the case where the transparent layer is formed between the transparent substrate and the first antireflection layer has been described. However, the transparent layer is formed after the antireflection layer opening forming step. It may be formed between the second antireflection layer and the thin film layer (FIG. 6 (A)), or may be formed on the one main surface side of the thin film layer by forming it after the peeling step ( Figure 6 (B)). The “pattern having the first antireflection layer, the second antireflection layer, the thin film layer, and the transparent layer” Includes configurations corresponding to FIG. 6 (A) and FIG. 6 (B).

As shown in FIG. 6 (A), the transparent layer 21 may be formed between the antireflection layer 27 and the thin film layer 28. In this case, it is possible to form a pattern in which the antireflection layer Z, the transparent layer, and the Z thin film layer are also patterned in order. In particular, SnO as a material for the transparent layer 21

2 is used, since the transparent layer 21 is formed between the antireflection layer 27 and the thin film layer 28, the antireflection layer 27 is protected by the transparent layer 21 and is less likely to be eroded by the dielectric. preferable.

In addition, as shown in FIG. 6 (B), the transparent layer 21 may be formed on the one main surface side of the thin film layer 28. In this case, it is possible to form a pattern in which the transparent substrate force is also patterned in order of the antireflection layer Z thin film layer Z transparent layer. In particular, when SnO, which is a transparent electrode material, is used as the material of the transparent layer 21, the transparent layer 21 is formed of the antireflection layer 27 and the thin film layer 28.

2

Therefore, the laminate of the antireflection layer 27 and the thin film layer 28 is preferably protected by the transparent layer 21 and eroded by the dielectric. Further, since the antireflection layer Z thin film layer is formed in this order, it is preferable because the reflection characteristics are improved. Further, when the pattern of the present invention is used as a PDP, it is preferable in that the conduction between the thin film layer and the transparent layer can be effectively taken. In addition, when the antireflection layer is patterned by forming the transparent layer after the formation of the thin film layer, the transparent layer does not exist, so the energy density of the first laser light L1 is shown in FIG. Compared to the case, it can be high. Specifically, the first laser beam L1 is an excimer laser beam, a YAG laser beam, or the like, and preferably has a wavelength of 500 to 1500 nm and an energy density of 1 to 40 j / cm ² . Note that the wavelength and energy density as described above can be used for the second laser beam L2 and the third laser beam L3.

6A and 6B, when the opening is formed in the transparent layer 21 by irradiation with the second laser beam L2, the antireflection layer 27 or the laminate of the antireflection layer 27 and the thin film layer 28 is Since it is covered with the photomask, the opening can be formed in the transparent layer 21 without damaging them.

[0096] In the present invention, since the thin film is not processed by wet etching using a resist film, the electrode for the plasma display substrate and the cost can be reduced with a smaller number of forming steps. z or black stripes can be formed.

In addition, since an etching agent exhibiting strong acidity or strong alkalinity is not used, there is no need to perform complicated operations required by handling the etching agent, and it is possible to form electrodes for plasma display substrates and Z or black stripes. Necessary processes are reduced.

Moreover, in this invention, the electronic circuit provided with the pattern formed with the said pattern formation method, and the electronic device using the said electronic circuit can be formed. Examples of the electronic circuit include a substrate with an electrode for LCD, a substrate with an electrode for organic EL, an electrode for a plasma display substrate, a substrate with Z or black stripe, and the electronic device includes an LCD, Examples include organic EL and PDP. When used as a PDP, it is particularly preferable to use it as a front substrate among the front substrate and the rear substrate. In addition, a plasma display substrate can be formed using the pattern formed by the pattern forming method of the present invention as an electrode for a plasma display substrate and a Z or black stripe. Here, the electrodes mean display electrodes and bus electrodes in the plasma display substrate. By this method, when the electrode and the black stripe are provided on the plasma display substrate, the black stripe and the electrode can be formed at the same time, so that the process can be shortened. In the case of PDP, the transparent layer is the display electrode, and the thin film layer is the bus electrode.

Next, with reference to FIG. 7 and FIG. 8, the electrode for the plasma display substrate provided with the black stripe 42, the bus electrode 41, and the display electrode 43 formed by the pattern forming method described above and Z or black stripe will be explained. FIG. 8 shows a cross-sectional view taken along line AA ′ of FIG.

As shown in FIG. 8, the black stripe 42 is formed of a first antireflection layer 23, a second antireflection layer 24, and a thin film layer 28 that are sequentially formed on the upper surface of the transparent substrate 20. By providing the first antireflection layer 23 and the second antireflection layer 24, reflection of visible light incident from the other main surface side of the transparent substrate 20 is prevented.

The display electrode 43 is formed from the transparent layer 21. When the display electrode 43 is attached to the electrode and Z or black stripe force SPDP, current flows and it is sealed in the corresponding position. Discharge the plasma.

The nose electrode 41 is formed of a transparent layer 21, a first antireflection layer 23, a second antireflection layer 24, and a thin film layer 28 that are sequentially formed on the upper surface of the transparent substrate 20. The bus electrode 41 supplies current to the display electrode 43 and reduces the resistance value of the display electrode 43.

In addition, since the bus electrode 41 includes the first antireflection layer 23 and the second antireflection layer 24, the reflection of visible light incident on the other main surface side force of the transparent substrate 20 is also reflected in the same manner as the black stripe 42. Is prevented. In addition, a clear image can be displayed on the PDP of the present invention.

[0101] In the electrode and the Z or black stripe part, the reflectance of visible light (specified in JIS-R3106 (1998)) incident from the other main surface side of the transparent substrate 20 is preferably 50% or less. More preferably, it is 40% or less, and more preferably 10% or less. If the reflectance is 50% or less, a clearer image is formed on the PDP.

[0102] It is also possible to form a plasma display back substrate having an address electrode by the pattern forming method of the present invention. Furthermore, a PDP can be formed using the plasma display back substrate.

Example

Hereinafter, the ability to more specifically describe the present invention based on examples. The present invention is not limited to these.

A method for forming electrodes and Z or black stripes for a plasma display substrate according to the embodiment will be described with reference to FIGS.

[0104] In this example, SnO containing 5% by mass of Sb as a target for forming a transparent layer.

As a material for forming the first antireflection layer, a film made of talyl resin containing 40% by mass of carbon black (hereinafter simply referred to as “mask film”) is used as the material for forming the mask layer. Using a metal Cr target (purity: 99.99% or higher), a metal Cr target (purity: 99.99% or higher) as the material for forming the second antireflection layer, and a metal Cu target (purity: 99 as the material for forming the thin film layer) 99% or more).

As shown in FIG. 9 to FIG. 12, the electrode for the plasma display substrate and the method for forming the Z or black stripe according to the example are as follows: (1) Transparent layer forming step (FIG. 9 (A)), (2 ) Transparent layer opening formation process (Fig. 9 (B)), (3) Antireflection layer formation process (Fig. 10 (C) '(D)), (4) Anti-reflection layer opening formation process (Fig. 10 (E)), (5) Mask film bonding process (Fig. 11 (F)), (6) Mask layer opening formation process by UV irradiation (development (Fig. 11 ( G) '(Η)), (7) Thin film layer formation process (Fig. 12 (1)), (8) Protective layer formation process (Fig. 12 Ci)), (9) Mask layer peeling by laser light irradiation The process (Fig. 12 (K)) is provided.

[0106] Specifically, first, the glass substrate 70 is mounted on the sputter deposition apparatus 80, and sputter deposition is performed using SnO containing 5% by mass of Sb. , Transparent

2

A bright layer 81 is formed (FIG. 9A). The thickness of the transparent layer 81 is 0.

[0107] Next, as the second laser beam, Y having a wavelength of 1064 nm and an energy density of 2.5 jZcm ²

AG laser light is irradiated to the transparent layer 81 from the other main surface side of the glass substrate 70 through the photomask 82 to form an opening in the transparent layer 81 (FIG. 9B).

[0108] Next, using the same sputter deposition apparatus 80, a metal Cr target was obtained in a mixed gas of Ar and O.

2

Sputter deposition is performed on the transparent layer 81 to form a CrO with an extinction coefficient of 0.3.

A first antireflection layer 83 composed of 1.3 layers is formed (FIG. 10C), and further, sputter film formation is performed on the first antireflection layer 83 using a metal Cr target in Ar gas. The antireflection layer 85 is formed by forming the second antireflection layer 84 composed of a Cr layer having a visible light transmittance of 0.05% (FIG. 10 (D)). The thickness of the first antireflection layer 83 is about 50 nm, and the thickness of the second antireflection layer 84 is 80 nm.

Next, as the first laser beam, a Y AG laser beam having a wavelength of 1064 nm and an energy density of 1.2 jZcm ² is applied from the other main surface side of the glass substrate 70 to the antireflection layer 85 through the photomask 86. Irradiation is performed to form an opening in the antireflection layer 85 (FIG. 10E).

Next, a 10 μm-thick mask film 88 is evenly attached to the one main surface side of the glass substrate 70 with a film muraminator 90 (FIG. 11 (F)). Then, the mask film 88 is irradiated with ultraviolet rays from the other main surface side of the glass substrate 70 using an ultraviolet curing device 92 (FIG. 11 (G)).

Next, after developing and removing the mask film 88 formed on the second antireflection layer 84 (FIG. 11 (H)), the glass substrate 70 is placed in the sputter deposition apparatus 80 again, and the second antireflection layer is formed. A thin film layer 94 made of Cu is formed on the layer 84 and the mask film 88 by sputtering using a metal Cu target in Ar gas (FIG. 12 (1)). The thickness of thin film layer 94 is &) At 3 μm.

Next, a protective layer 95 made of Cr is formed on the thin film layer 94 by sputtering using a metal Cr target in Ar gas (FIG. 12 Ci)). The thickness of the protective layer 95 is lOnm.

[0112] As the laser light, YAG laser light having a wavelength of 1064 nm and an energy density of 0.25jZcm ² is applied to the mask film 88 from the other main surface side of the glass substrate 70, and the mask film 8

8 is peeled from the glass substrate 70 (FIG. 12 (K)).

[0113] Through the above steps, a plasma display substrate having electrodes and Z or black stripes similar to those shown in FIGS. 7 and 8 can be formed. The formed plasma display substrate is useful as a PDP.

[0114] Although the invention has been described in detail and with reference to specific embodiments, it will be apparent to those skilled in the art that various changes and modifications can be made without departing from the spirit and scope of the invention. is there.

This application is based on Japanese Patent Application 2004-376174 filed on December 27, 2004, the contents of which are incorporated herein by reference.

Industrial applicability

[0115] According to the present invention, since wet etching is not performed, a pattern having a transparent layer and a thin film layer can be formed on a transparent substrate with fewer steps than in the past. Therefore, according to the present invention, it is possible to efficiently form a pattern having a transparent layer and a thin film layer on a transparent substrate at a low cost. In addition, an electronic circuit including a transparent substrate on which a pattern having a transparent layer and a thin film layer is formed can be efficiently formed at low cost.

Claims

The scope of the claims

[1] An antireflection layer forming step of forming an antireflection layer on one main surface side of the transparent substrate, and an antireflection layer opening forming step of forming an opening by irradiating the antireflection layer with a first laser beam When,

A mask layer forming step of forming a mask layer on the one main surface side of the transparent substrate after the antireflection layer opening forming step;

A mask layer opening forming step of forming an opening in the mask layer;

A thin film layer forming step of forming a thin film layer on the one main surface side of the transparent substrate, after the mask layer opening forming step;

And a peeling step of peeling the mask layer from the transparent substrate after the thin film layer forming step,

A transparent layer forming step of forming a transparent layer on the one main surface side of the transparent substrate, before the antireflection layer forming step, after the antireflection layer opening forming step, or after the peeling step;

A transparent layer opening forming step of forming an opening by irradiating the transparent layer with a second laser beam after the transparent layer forming step.

[2] The mask layer forming step includes

An ultraviolet curable resin coating step of applying an ultraviolet curable resin to the one main surface side of the transparent substrate;

2. The pattern formation according to claim 1, further comprising: an ultraviolet resin curing step of irradiating the ultraviolet curable resin with ultraviolet rays from the other main surface side of the transparent substrate to cure the ultraviolet curable resin. Method.

[3] The pattern forming method according to claim 1 or 2, wherein, in the peeling step, the mask layer is irradiated with a third laser beam to peel the mask layer also with the transparent substrate force.

4. The pattern forming method according to claim 3, wherein the third laser light has a wavelength of 500 to 1500 nm and an energy density of 0.1 lj / cm ² or more and less than lj / cm ² .

[5] The antireflection layer includes a first antireflection layer containing chromium oxide and Z or titanium oxide, and a second antireflection layer containing metal chromium and Z or titanium. The pattern formation method according to any one of claims 1 to 4.

6. The pattern forming method according to any one of claims 1 to 5, wherein the mask layer is formed using an organic material.

[7] The pattern forming method according to any one of claims 1 to 6, wherein the mask layer contains a black pigment and Z or a black dye.

[8] The pattern forming method according to any one of [1] to [7], wherein the first laser beam has a wavelength of 500 to 1500 nm and an energy density of lj / cm ² or more and less than ² jZcm ² .

[9] The pattern forming method according to any one of [1] to [8], wherein the second laser light has a wavelength force of S500 to 1500 nm and an energy density of ² to 40 jZ cm ² .

[10] The pattern forming method according to any one of claims 1 to 9, wherein the thin film layer contains metallic chromium and Z or metallic titanium and metallic copper.

[11] The pattern forming method according to any one of claims 1 to 10, further comprising a protective layer forming step of forming a protective layer after the thin film layer forming step.

[12] The pattern forming method according to any one of [1] to [1] above, wherein the transparent layer has a thickness of 0.1 to 3 / ζ πι.

13. The pattern forming method according to claim 1, wherein the mask layer has a thickness of 6 to 25 μm.

[14] 30 to 95 masses of the black pigment and Z or the black dye in the mask layer

The pattern formation method of Claim 7 containing%.

[15] An antireflection layer forming step of forming an antireflection layer on one main surface side of the transparent substrate, and an antireflection layer opening forming step of forming an opening by irradiating the antireflection layer with a first laser beam When,

A mask layer opening forming step of forming an opening in the mask layer;

Peeling off the mask layer from the transparent substrate after the thin film layer forming step A process,

A transparent layer forming step of forming a transparent layer on the one main surface side of the transparent substrate after the peeling step;

[16] An electronic circuit comprising a pattern formed by the pattern forming method according to any one of claims 1 to 15.

17. An electronic device having the electronic circuit according to claim 16.

[18] A method for forming a plasma display substrate, comprising the step of forming a pattern by the pattern forming method according to any one of [1] to [15].

[19] On one main surface side of the transparent substrate,

A first antireflective layer made of chromate and Z or titanate, a second antireflective layer made of metal chromium and Z or metal titanium,

A thin film layer made of metallic copper,

A plasma display substrate comprising a pattern having a transparent layer made of SnO 2 as electrodes and Z or black stripes.

20. The plasma display substrate according to claim 19, wherein the electrode and Z or the black stripe have a reflectance of 50% or less of visible light incident from the other main surface side of the transparent substrate.

21. The plasma display substrate according to claim 19 or 20, wherein the second antireflection layer is a protective layer for the thin film layer.

[22] A plasma display panel comprising the plasma display substrate according to claim 19, 20 or 21.