JPH11167874A - Wiring substrate and gas discharge type display using it - Google Patents

Abstract

PROBLEM TO BE SOLVED: To suppress the breaking defect of an electrode being formed in a wiring substrate or a gas discharge type display panel, especially suppress the breaking defect in the case when the electrode is formed by wet etching by forming at least first electrode or a second electrode with a resist made of an inorganic material by wet etching. SOLUTION: When an address electrode is formed on a back plate, a Cr layer 11c, a Cu layer 11b, a Cr layer 11a, and an ITO layer serving as an inorganic material layer 25 are formed on a glass substrate 10 in order by sputtering, and then a film resist serving as photoresist 26 is laminated between thereon. After the specified treatment for forming a desired electrode pattern is performed, the Cr layer 11a is etched with the specified aqueous solution by using the inorganic material layer 25 as the resist, the Cu layer 11b is etched by using the inorganic material layer 25 and the Cr layer 11a as the resist, and finally the Cr layer 11c is etched to form the electrode wiring having the constitution of Cr/Cu/Cr/ITO.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] 1. Field of the Invention [0002] The present invention relates to a wiring substrate for forming a wiring pattern on a substrate and a gas discharge display device using the same.

[0002]

2. Description of the Related Art A gas discharge type display device such as a plasma display performs display by self-emission, so that the display angle is wide and the display is easy to see. In addition, it has features such as being able to produce a thin type and realizing a large screen, and has begun to be applied to display devices of information terminal equipment and high-definition television receivers. Plasma displays are roughly classified into a DC drive type and an AC drive type. Among them, the AC drive type plasma display has a high luminance due to the memory effect of the dielectric layer covering the electrodes, and has a practically usable life due to the formation of the protective layer and the like. As a result, plasma displays have been put to practical use as versatile video monitors.

FIG. 9 is a perspective view showing the structure of a practically used plasma display panel. In this figure, the front substrate 100 is shown separated from the rear substrate 200 for easy viewing.

The front substrate 100 includes a front glass substrate 400
A display electrode 600 made of a transparent conductive material such as ITO (Indium Tin Oxide) or tin oxide (SnO2) and a bus electrode 700 made of a low-resistance material, a dielectric layer 800 made of a transparent insulating material, a magnesium oxide (M
The protective layer 900 is made of a material such as gO).

The back substrate 200 is a back glass substrate 500
The structure has an address electrode 1000, a barrier rib 1100, and a phosphor layer 1200 formed thereon. Although not shown, a dielectric layer 1300 is also formed on the address electrode 1000.

The front substrate 100 and the rear substrate 200
Are bonded so that the display electrode 600 and the address electrode 1000 are substantially orthogonal to each other, so that a discharge space region 300 is formed between the front substrate 100 and the rear glass substrate 500.

In this gas discharge type display device, the front substrate 1
00, an AC voltage is applied between a pair of display electrodes 600 provided on the rear substrate 200, and a voltage is applied between the address electrodes 1000 provided on the rear substrate 200 and the display electrodes 600 to generate an address discharge. A main discharge is generated in the cell. The red, green, and blue phosphors 1200 that are separately applied to the respective discharge cells are caused to emit light by the ultraviolet light generated by the main discharge, and display is performed.

A conventional example of such a gas discharge type display device is, for example, a flat panel display 1996.
(Nikkei Microdevices, 1995), pp. 208-215.

Here, the bus electrode 700 of the front substrate 100 and the address electrode 1000 of the rear substrate 200
The method for forming is described in more detail. FIG. 8 shows an example in which an address electrode 1000 is formed on a rear glass substrate 500. The bus electrodes 700 of the front substrate 100 are also formed by substantially the same steps, and a description thereof will be omitted.

First, a Cr / Cu / Cr layer (1000a-c) serving as an address electrode 1000 on a rear glass substrate 500 and a resist 2500 for forming a pattern of the address electrode 1000 are formed by sputtering, vapor deposition, spin coating, or the like. The layers are sequentially formed by using a film forming technique such as dry fill (step (a): film forming step). Next, the resist 2 is formed so as to have a desired pattern of the address electrode 1000.
Exposure and development of 500 are performed (steps (b) and (c): photolithography step). Next, the Cr layer 1000 was etched using a Cr etching solution.
a is etched into a desired pattern (step (d): etching step). Next, the exposed and developed resist 2
The resist 500 is peeled off, and a resist 2500 is formed again (steps (e) and (f)). The above processing is performed for the Cu layer 1000b, Cr
The address electrode 1000 is formed on the rear glass substrate 500 by repeating the process for each layer of the layer 1000c (steps (g) to (o)).

Generally, a process using such an etching solution is called wet etching. In the conventional wet etching, the resist 2500 is formed of an organic material.

[0012] Conventionally, when an electrode is formed by wet etching, a photolithography step for forming a resist has been essential.

[0013]

In order to reduce the number of photolithography steps, for example, we use only the resist 2500 formed in steps (a) to (c) to form the Cr layer 1000.
a, Formation of a multilayer wiring such as a Cu layer 1000b and a Cr layer 1000c was studied. This method can be used if an etchant capable of selectively etching the Cr layer and the Cu layer can be used, but in practice, an etchant that does not damage the resist of the alkali developing / peeling type is used. Etching and Cr layer 1000a, 100
It has been clarified from the experimental results that 0c becomes extremely easy to be side-etched, and the processing accuracy of the Cr / Cu / Cr layer becomes very unstable. When the Cr layer is side-etched, the side-etched portion becomes a gap, and residuals such as voids and etchant enter therein, causing a disconnection failure due to erosion of the wiring in the firing process of the dielectric. If the wiring breaks,
In the gas discharge type display panel, there is a line that does not contribute to display, which is a fatal problem for the display panel. Note that the Cr / Cu / Cr layer is a wiring that has a lower resistance than other electrode materials, and is therefore very effective for large display devices such as gas discharge display panels.
A similar problem occurs when a multilayer wiring of / Al / Cr or the like is formed by wet etching.

When the resist is formed of an organic material,
It has also been found that erosion occurs at the resist interface due to an etching solution caused by the adhesion between the resist and the electrode, and erosion occurs due to a resist defect caused by the inclusion of foreign matter and bubbles, thereby causing a disconnection failure. In addition, since the conventional resist is formed by a photolithography process, it is easy to cause a resist defect due to a foreign substance or the like. If an electrode was formed by wet etching in the presence of a resist defect, the region corresponding to the resist defect was also etched, and the electrode was easily broken. These problems are not limited to multilayer wiring such as Cr / Cu / Cr, Cr / Al / Cr, etc.
A similar problem occurs when a wiring of Ag, Ni, Au or the like is formed by wet etching.

As described above, in a gas discharge type display panel or a wiring substrate in which electrodes are formed by using conventional wet etching, disconnection failure is likely to occur due to side etching or unexpected erosion of the electrodes. In addition, disconnection failures caused by resist defects were likely to occur.

[0016]

SUMMARY OF THE INVENTION It is an object of the present invention to suppress a disconnection failure of an electrode formed on a wiring board or a gas discharge type display panel. In particular, an object of the present invention is to suppress a disconnection defect when an electrode is formed by wet etching.

According to the present invention, in order to achieve the above object, a resist in wet etching is formed of an inorganic material.

That is, a front substrate having a plurality of first electrodes and a rear substrate having a plurality of second electrodes are provided.
At least the first electrode or the second electrode was formed by wet etching using a resist made of an inorganic material.

Further, a front substrate having a plurality of first electrodes, a first dielectric layer covering the first electrodes, a plurality of second electrodes, and a second substrate covering the second electrodes. And a back substrate having a dielectric layer of at least between the first electrode and the first dielectric layer or between the second electrode and the second dielectric layer of an inorganic material A first electrode or the second electrode was formed by wet etching using the inorganic material layer.

As a result, a resist formed of an inorganic material by a sputtering method or a vapor deposition method has higher adhesion to an electrode than a conventional organic material resist, so that erosion at the resist interface by an etching solution is prevented. Thus, it was possible to reduce disconnection defects.

When an inorganic material is used as a resist, there is no need to consider etching damage as compared with a conventional organic material, and an etchant that can easily control the amount of etching can be used. The disconnection due to the conventional side etch can be suppressed.
As the inorganic material, for example, ITO, SiO2, an alloy layer of Ni and Cr, or the like may be used.

Further, since the inorganic material layer has little reaction with the electrode and the dielectric layer, it can be interposed between the electrode and the dielectric layer without peeling the inorganic material layer. It has also become possible to suppress erosion and disconnection of the electrode due to reaction with the layer.

As a method of forming a resist using an inorganic material layer, any method such as photolithography, blaster, or laser may be used.

Further, in the present invention, in order to achieve the above object, a resist is formed by using a blaster.
That is, the present invention includes a front substrate having a plurality of first electrodes and a back substrate having a plurality of second electrodes, and uses a blaster on at least the first electrode or the second electrode. The first electrode or the second electrode was formed by wet etching using the material layer. In this case, the material layer becomes a resist for the first and second electrodes.

To form this material layer, a protective layer serving as a resist for the material layer must be formed. However, since the material layer (resist) is formed using a blaster, an interface between the protective layer and the material layer is formed. The etching liquid did not penetrate into the substrate, and the possibility of causing a defect in the material layer (resist) was reduced. Therefore, since the wet etching is performed using the material layer (resist) having few defects, disconnection of the electrode and the like can be suppressed. Further, the processing of the resist using the blaster could be realized in a short time and at low cost.

In addition, if the material layer is formed by using a laser instead of a blaster, even a protective layer used in the blaster is not formed, so that an electrode can be formed without a photolithography step. Could be shortened. Naturally, a mask for forming an electrode pattern is not required. Further, if the material layer (resist) is formed without using the photolithography process, the material layer is merely removed by a laser so as to have a desired pattern, so that the resist defects can be extremely reduced.

The material layer (resist) in these cases may be an organic material or an inorganic material.

Further, when a blaster is used, the same processing as a laser can be performed by narrowing the nozzle of the blaster. Furthermore, material layer (resist)
Even if it is mechanically cut into a desired pattern, the same processing as laser can be performed.

[0029]

Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 shows a first embodiment in which address electrodes are formed on a rear substrate.

In the figure, reference numeral 10 denotes a rear glass substrate, 11
a, 11b, 11c are address electrodes, which are Cr / Cu / Cr in order.
The layers are stacked. 25 is an inorganic material layer to be a resist,
Reference numeral 26 denotes a photoresist layer for forming a pattern of the resist 25.

First, after a Cr layer 11c, a Cu layer 11b, a Cr layer 11a, and an ITO layer serving as an inorganic material layer 25 are sequentially formed on the glass substrate 10 by sputtering, a dry film resist serving as a photoresist 26 is laminated (step (step (1))). a)).

Next, after the photoresist 26 (dry film resist) is exposed and developed so as to have a desired electrode pattern, baking is performed (step (b)).

Next, the inorganic material layer 25 (ITO layer) is removed by performing a blasting treatment with calcium carbonate (step).
(c) (d)). The processing of the resist by this blast processing,
A pattern having a width almost the same as the resist width could be formed in a very short time with high precision.

Next, the photoresist 26 (dry film resist) is removed (step (e)). Here, the inorganic material layer 25 (ITO layer) generated by the above-mentioned blast processing
It is preferable to remove the dust by washing.

Subsequently, the Cr layer 11a is etched using an aqueous solution comprising potassium permanganate and sodium metasilicate (step (f)). In this case, the above-mentioned inorganic material layer 25 (ITO layer) serves as a resist for the Cr layer 11a. The aqueous solution composed of potassium permanganate and sodium metasilicate is an alkaline aqueous solution capable of etching the Cr layer 11a, and hardly etches the inorganic material layer 25 (ITO layer) and the Cu layer 11b. As a result, the inorganic material layer 25 (ITO layer) could be formed substantially without erosion by the alkaline aqueous solution, and the Cr layer 11a was hardly side-etched. Further, the adhesion between the inorganic material layer 25 (ITO layer) and the Cr layer 11a is good, and
The interface with the inorganic material layer 25 (ITO layer) of a was not eroded.

Next, the Cu layer 11b is etched using an aqueous solution comprising ferric sulfate and sulfuric acid (step (g)). In this case, the aforementioned inorganic material layer 25 (ITO layer) and the Cr layer 11a
It becomes a resist for the Cu layer 11b. The aqueous solution composed of ferric sulfate and sulfuric acid is an acidic aqueous solution capable of etching the Cu layer 11b, and hardly etches the inorganic material layer 25 (ITO layer) and the Cr layer 11a. Thereby, the Cr layer 11a,
The Cu layer 11b could be formed with almost no side etching.

Next, Cr is etched again using an aqueous solution comprising potassium permanganate and sodium metasilicate to form an electrode wiring having a structure of Cr / Cu / Cr / ITO (step (h)).

By the above process, it was possible to obtain an electrode wiring having a structure of Cr / Cu / Cr / ITO with few disconnection defects due to side etching or the like.

When the inorganic material layer 25 (ITO layer) is used as a resist as described above, sufficient adhesion between the inorganic material layer 25 and the Cr layer 11a can be ensured, and electrode erosion or disconnection failure at the resist interface due to the etching solution. Was able to be suppressed. In addition, resist defects of the inorganic material layer 25 due to entrapment of foreign matter, bubbles, and the like were reduced, and erosion and disconnection failure of the electrode by the etching solution could be suppressed.

Further, by using the inorganic material layer 25 as a resist, the selection range of the etching solution is widened, and the conventional Cr layer 11 is formed.
The side etch of a and c could be suppressed. Further, it is no longer necessary to consider the etching damage to the resist.

Also, by using a blaster such as sandblasting instead of the conventional etching solution, the inorganic material layer 2
5 was able to suppress the resist defect. That is,
Since the etchant does not penetrate from the interface between the photoresist 26 and the inorganic material layer, it is unlikely that a defect occurs in the inorganic material layer 25 (resist). Since the wet etching was performed, disconnection of the electrode and the like could be suppressed.

In this electrode formation process, the Cr layer is etched with an alkaline aqueous solution. Conventionally,
When forming with an alkali-resistant organic resist using the photolithography process, the developing solution and stripping solution for the alkali-resistant organic resist were expensive and caused pollution. Since there is little reaction with the above, there is no need for stripping, and a stripping solution is not required. Further, since the inorganic resist is formed by using a blaster instead of the photolithography process, a developer for an alkali-resistant organic resist is not used. That is, the problem of the conventional developing solution and stripping solution for the alkali-resistant organic resist is eliminated.

Next, FIG. 2 shows a second embodiment in which address electrodes are formed on a rear substrate.

In FIG. 1, when the Cu layer 11b is etched, a defect such as a pinhole of the inorganic material layer 25 (ITO layer) is formed.
It was found that a very small amount of the etchant of the u layer remained and might erode the Cu layer in a later step. Therefore, in FIG. 2, the electrodes were formed by the following process.

First, the Cr layer 11a is etched through the same process as in FIG. 1 (steps (a) to (e)).

Next, on the inorganic material layer 25 (ITO layer), a photoresist 26 which is not eroded by the Cu etching solution is formed.
After laminating (dry film resist) (step (f)), it is exposed and developed into a pattern covering the inorganic material layer 25 (ITO layer) (step (g)). Thereafter, the unexposed portions of the photoresist 26 (dry film resist) are removed (step (h)), and the Cu layer 11b is etched with the same etchant as in FIG. 1 (step (I)). Then, the photoresist 26 (dry film resist) is removed (step (j)). Subsequent processes are performed in the same manner as in FIG.

Thus, the inorganic material layer 25 (ITO layer)
When the etching solution for Cu remained in the defects such as the pinholes, the erosion of the Cu layer in the subsequent process could be suppressed.

Next, FIG. 3 shows a third embodiment in which address electrodes are formed on a rear substrate.

FIG. 1 is different from FIG. 1 in that the blast treatment with calcium carbonate is performed not only on the inorganic material layer 25 (ITO layer) but also on the Cr layer 11a.
(Step (d)), and after etching the Cu layer 11b (Step (e)), the photoresist 26 (dry film resist) is removed (Step (f)), and the other points are the same. Therefore, the photoresist 26
As the (dry film resist), a material that was not etched by the etching solution for the Cu layer 11b was selected.

As a result, the step of etching the Cr layer 11a is eliminated, and the electrode forming process can be simplified. Also, considering the efficiency of the blast method and the efficiency of the wet etching method, it is preferable to process up to the Cr layer 11a by the blast method based on the material characteristics and the film thickness of the Cu layer 11b. The formation of the electrode by combining the dry etching method such as the blast method and the wet etching method in this manner is effective for simplifying the process and preventing the disconnection of the electrode.

Next, FIG. 4 shows a fourth embodiment in which address electrodes are formed on a rear substrate.

FIG. 4 shows an example in which electrodes are formed without using the photolithography process.

First, a Cr layer 11c, a Cu layer 11b, a Cr layer 11a, and an ITO layer to be an inorganic material layer 25 are sequentially formed on the glass substrate 10 by sputtering (step (a)).

Next, the inorganic material layer 25 (ITO layer) is removed using a laser so as to obtain a desired electrode pattern (step (b)).

Thereafter, similarly to FIG. 1, the Cr layer 11a, Cu1
1b and Cr11c are sequentially etched to form an electrode wiring (steps (c) to (e)).

When a laser is used as described above, FIGS.
The resist could be formed without the photolithography step as shown in (1), and the electrode formation process could be greatly simplified. Further, a mask for forming an electrode is not required.

The elimination of the photolithography step eliminates resist defects due to unexposed portions caused by the attachment of foreign matter and the like, thereby suppressing disconnection defects and the like during wet etching caused by the resist defects. That is, it was possible to realize an electrode forming process that is resistant to foreign matter.

Incidentally, as shown in FIG. 3, up to the Cr layer 11a may be processed by laser. This was feasible even from the thickness of the Cr layer, and could be actually processed with high precision. The process is as shown in FIG.

In the processes shown in FIGS. 4 and 5, a very small amount of the Cu layer etchant remains in defect portions such as pinholes of the inorganic material layer 25 (ITO layer) in the etching of the Cu layer 11b. It has been found that erosion may occur. Therefore, in FIG. 6, in order to solve this point, an electrode is formed by the following process. FIG. 6 illustrates the process of FIG.

First, a Cr layer 11c, a Cu layer 11b, and a Cr layer 11a are sequentially formed on the glass substrate 10 by sputtering, and then a resist 27 which is not eroded by an etching solution for the ITO layer and the Cu layer 11b to be the inorganic material layer 25 is formed. Form (step
(a)).

Next, a resist 27, an inorganic material layer 25, and a Cr layer 11 are formed by using a laser so as to form a desired electrode pattern.
Remove a (step (b)). Thus, the resist 27
Is formed by a laser, and need not be a photosensitive material as used in a conventional photolithography process.

Next, the Cu layer 11b is etched using the resist 27 using an aqueous solution comprising ferric sulfate and sulfuric acid (step (c)). At this time, since the resist 27 is present on the inorganic material layer 25, the inorganic material layer 25 is not easily eroded.

Thereafter, the resist 27 is peeled off, and the Cr layer 11c is etched using an aqueous solution comprising potassium permanganate and sodium metasilicate (step (d)).
The resist 27 may be stripped after step (e).

By the above process, an electrode wiring having a Cr / Cu / Cr / ITO structure with less disconnection failure due to side etching or the like was obtained (step (e)).

Thus, the inorganic material layer 25 (ITO layer)
Thus, the Cu etchant did not remain, and the erosion of the Cu layer in the subsequent process could be suppressed.

Next, a description will be given of a low-cost electrode which has less side etching and the like, and further reduces the number of steps as compared with the previous embodiments.

FIG. 10 shows an example in which electrodes are formed for the purpose of reducing the number of times of film formation by sputtering or the like and further reducing cost.

First, a Cr layer 11c, a Cu layer 11b, and an alloy layer of Ni and Cr to be the inorganic material layer 25 are sequentially sputtered on the glass substrate 10 (step (a)). In the case of an alloy layer of Ni and Cr, selective etching of the subsequent Cr layer 11b and Cu layer 11c is possible. In addition, it is a material that can be easily laser-processed.

Next, the inorganic material layer 25 (the alloy layer of Ni and Cr) is removed using a laser so as to obtain a desired electrode pattern (step (b)). Of course, blasting may be performed as in the above-described embodiment.

Thereafter, similarly to FIG. 3, the Cu layer 11b and the Cr layer 11c are sequentially etched to form electrode wirings (steps (c) to (d)).

With this electrode configuration, the Cr layer 11a described in the previous embodiments becomes unnecessary, so that the step of forming the Cr layer 11a can be omitted, and the cost can be further reduced. . Further, an electrode composed of a Cr layer 11c, a Cu layer 11b, and an alloy layer of Ni and Cr is:
In addition to prevention of disconnection due to side etching, etc., adhesion to the substrate 10 by the Cr layer 11c, lowering resistance by the Cu layer 11b,
Since the reaction of the alloy layer of Ni and Cr with the dielectric layer (not shown) can be prevented, the conditions required for the plasma display panel can be satisfied. Note that Ni
Instead of an alloy layer of Cr and Cr, SiO2, ITO, Si, Ni or the like may be used.

Similarly, FIG. 11 shows an example in which the number of times of film formation by sputtering or the like is reduced and the Cr layer is thickened to form an electrode using the inorganic material layer 25.

First, a Cr layer 11c, a Cu layer 11b, and a thick Cr layer to be the inorganic material layer 25 are sequentially sputtered on the glass substrate 10 (step (a)). It is preferable that the thickness of the Cr layer 25 be three times or more the thickness of the Cr layer 11c in order to facilitate setting of process conditions described later.

Next, the inorganic material layer 25 (thick Cr layer) is removed using a laser so as to obtain a desired electrode pattern (step (b)). Of course, blasting may be performed as in the above-described embodiment.

Thereafter, similarly to FIG. 3, the Cu layer 11b and the Cr layer 11c are sequentially etched to form an electrode wiring (steps (c) to (d)).

In this case, when the Cr layer 11c is etched, the inorganic material layer 25 (thick Cr layer) is also etched to reduce the film thickness. However, since the inorganic material layer 25 is sufficiently thicker than the Cr layer 11c, there is a problem in reliability. An electrode having no defects could be formed. Also, by making the inorganic material layer 25 thicker, pinholes are less likely to be formed in the inorganic material layer 25, so that the residue of the etching solution on the surface of the Cr layer 11b is reduced, and this etching residue causes Cu in a later step. Erosion of the layer can be prevented.

If the Cr layer 25 is made thicker as described above, dry etching such as laser processing and wet etching as in the past can be performed even if the underlying Cu layer 11b or Cr layer 11c is not selective. Can be formed in combination.

Next, an example of a gas discharge type display panel formed by using the above-described electrode forming process will be described with reference to FIG.

FIG. 7 shows a gas discharge type display panel. FIG. 7 (a) shows a sectional view parallel to the address electrode, and FIG. 7 (b) shows a sectional view perpendicular to the address electrode. It is shown. Further, the above-described electrode forming process is applied to both the front substrate and the rear substrate.

In the figure, 10 is a rear glass substrate, 11
Is an address electrode, 12 is a thin-film dielectric layer such as SiO2, 13 is a thick-film dielectric layer, 14 is a front glass substrate, 15 is a transparent electrode such as ITO, 16 is a bus electrode such as Cr-Cu-Cr, and 17 is a bus electrode. SiO2
, A thick film dielectric layer, 19 a protective film such as MgO, 20 a sealing member, 21 an electrode from an external circuit, 22 an anisotropic conductive sheet containing conductive particles, 23 Is a partition, 24 is a phosphor layer, and 25 is an inorganic material layer which becomes a resist when forming an electrode.

The front substrate was formed as follows.

First, a transparent electrode 15 is formed on a glass substrate 14. The transparent electrode 15 may be formed by using any of wet etching, blaster, and laser.
It is preferable to use a laser to simplify the process. Next, the bus electrode 14 is formed on the transparent electrode 15 by using the above-described electrode forming process of the present invention. At this time, the above-mentioned inorganic material layer 25 exists on the bus electrode 16. Next, a thin film dielectric layer 17 is formed so as to cover at least the transparent electrode 15 and the bus electrode 16. For example, the thin film dielectric layer 17 is formed on the entire panel. Next, a thick film dielectric layer 18 is formed on the thin film dielectric layer 17 by a thick film printing method. Next, a protective film 19 such as MgO is formed on the thick film dielectric layer 18 by vapor deposition. In the case of the front substrate, the transparent electrode 15 is formed below the bus electrode 16. Generally, this transparent electrode 15 is an ITO layer. Therefore, the transparent electrode 15 and the bus electrode 16 including the inorganic material layer 25 may be formed by a series of wet etching steps by applying the above-described electrode forming process of the present invention. In this case, ITO / Cr / Cu / Cr / ITO is sequentially formed, and Cr / Cu / Cr / ITO to be the bus electrode 16 is formed by using any of the above-described electrode forming processes of the present invention. Thereafter, a resist is formed so that the ITO layer serving as the transparent electrode 15 has a desired pattern, the ITO layer is etched using the resist, and the resist is peeled to form the transparent electrode 15 and the bus electrode 16. Can be. The inorganic material layer 25 may be an SiO2 layer or an alloy layer of Ni and Cr.

On the other hand, the rear substrate was formed as follows.

First, the address electrode 1 was placed on the glass substrate 10.
1 is formed using the above-described electrode forming process of the present invention. Next, a thin film dielectric layer 12 is formed so as to cover at least the address electrodes 11. For example, the thin film dielectric layer 12 is formed on the entire panel. Next, the thin film dielectric layer 12
A thick-film dielectric layer 13 is formed thereon by a thick-film printing method. Next, a partition 23 is formed on the thick film dielectric layer 13, and a phosphor layer 24 is formed by a printing method. This partition,
It may be formed in a stripe shape parallel to the address electrode or in a lattice shape surrounding the display cell.

The front substrate and the rear substrate thus formed were aligned, and then sealed with the sealing member 21. A rare gas is mixed in the sealed space. Further, the electrodes 21 from the external circuit are connected to the external connection terminals of the front substrate and the rear substrate via the anisotropic conductive sheet in order to simplify the connection process.

As described above, since the reaction between the address electrode 11 and the dielectric layer 18 and the reaction between the bus electrode 16 and the dielectric layer 13 do not cause a problem, the inorganic material layer 25 can be left without being separated. This makes it possible to suppress the reaction between the address electrode 11 and the dielectric layer 18 and the reaction between the bus electrode 16 and the dielectric layer 13, thereby suppressing the erosion of the address electrode 11 and the bus electrode 16. Therefore, there is no problem even if the thin film dielectric layer 12 in the figure is not formed.

As described above, the bus electrode and the address electrode are made of Cr / C
u / Cr / ITO layer or Cr / Cu / Cr / SiO2 layer or Cr / Cu / Cr
When formed as an alloy layer of / Ni and Cr, disconnection failure due to various causes could be reduced as a result.

In order to further reduce disconnection defects, it is necessary to use Cr
What is necessary is just to form by using a different resist in any of the layer 11a, the Cu layer 11b, and the Cr layer 11c. In addition, the inorganic material layer 2
It may be composed of layers and may be a Cr / Cu / Cr / ITO / SiO2 layer.

In the embodiments described so far, it goes without saying that the same effect can be obtained even if the Cr / Cu / Cr electrode wiring is replaced with Cr / Al / Cr, Ag, Ni, Au, Al, or the like. . That is, it goes without saying that the same effect can be obtained if the material satisfies the wiring resistance required for the gas discharge type display panel. In addition to the address electrodes, FIG.
It is needless to say that the same effect can be obtained by forming the bus electrode on the front substrate as shown in FIG. Further, it is needless to say that the present invention can be applied not only to the gas discharge type display panel but also to all wiring boards and the like in which electrodes are formed by wet etching.

Further, if the inorganic material layer 25 (resist) is used, it is needless to say that erosion of the electrode at the resist interface can be suppressed without using a blaster or laser. Conversely, if the resist is formed using a blaster or laser, it goes without saying that resist defects can be suppressed even if the resist is not an inorganic material.

[0092]

As described above, according to the present invention, it is possible to suppress a disconnection failure of an electrode formed on a wiring substrate or a gas discharge type display device. In particular, it is possible to suppress a disconnection defect when an electrode is formed by wet etching.

[Brief description of the drawings]

FIG. 1 is a process diagram showing a first embodiment of the present invention.

FIG. 2 is a process diagram showing a second embodiment of the present invention.

FIG. 3 is a process diagram showing a third embodiment of the present invention.

FIG. 4 is a process diagram showing a fourth embodiment of the present invention.

FIG. 5 is a process chart showing a fifth embodiment of the present invention.

FIG. 6 is a process chart showing a sixth embodiment of the present invention.

FIG. 7 is a sectional view showing a gas discharge type display device of the present invention.

FIG. 8 is a conventional process diagram.

FIG. 9 is a cross-sectional view showing a conventional gas discharge type display device.

FIG. 10 is a process chart showing a seventh embodiment of the present invention.

FIG. 11 is a process chart showing an eighth embodiment of the present invention.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 10 ... Back glass substrate, 11 ... Address electrode, 12 ... Thin film dielectric layer, 13 ... Thick film dielectric layer, 14 ... Front glass substrate, 15 ... Display electrode, 16 ... Bus electrode, 17 ... Thin film dielectric layer, 18 ... thick dielectric layer, 19 ... protective film, 20 ... sealing material, 21 ... electrodes for external circuits, 22 ... anisotropic conductive sheet,
23 ... partition walls, 24 ... phosphor layers, 25 ... inorganic material layers.

 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Yuzo Taniguchi 4-6-6 Kanda Surugadai, Chiyoda-ku, Tokyo Inside Hitachi, Ltd. (72) Shigeaki Suzuki 4-6-6 Kanda Surugadai, Chiyoda-ku, Tokyo Hitachi Media Information Business Division (72) Inventor Tsutsumi Kawai 4-6 Kanda Surugadai, Chiyoda-ku, Tokyo Stock Company Hitachi Information Media Business Division (72) Inventor Akira Yashita 4-chome, Kanda Surugadai, Chiyoda-ku, Tokyo No. 6 Inside the Hitachi, Ltd. Information Media Business Unit (72) Inventor Makoto Fukushima 4-6-chome, Kanda Surugadai, Chiyoda-ku, Tokyo Inside the Hitachi Ltd. Information Media Business Unit (72) Inventor Tomohiko Murase Chiyoda-ku, Tokyo Kanda Surugadai 4-chome 6 Hitachi, Ltd. Information In the A Division

Claims (21)

[Claims] 1. A front substrate having a plurality of first electrodes and a rear substrate having a plurality of second electrodes, wherein at least the first electrode or the second electrode is formed of a resist made of an inorganic material. A gas discharge display device characterized by being formed by wet etching. 2. The gas discharge type display device according to claim 1, wherein said resist is formed using a blaster. 3. The gas discharge display device according to claim 1, wherein said resist is formed by using a laser. 4. A blaster comprising: at least the first electrode or the second electrode is a Cr / Cu / Cr layer; and the resist and a Cr layer which is an uppermost layer of the first electrode or the second electrode are blasted. The gas discharge type display device according to claim 1, wherein the display device is formed using a laser. 5. The method according to claim 1, wherein at least the first electrode or the second electrode is a Cr / Cu / Cr layer, and at least a Cr layer of the first electrode or the second electrode is formed using an alkaline etchant. 2. The gas discharge display device according to claim 1, wherein the display device is formed by wet etching. 6. The gas discharge type display device according to claim 1, wherein said resist is composed of two or more layers of an inorganic material. 7. The method according to claim 1, wherein said resist is an ITO film or an alloy layer of SiO2 or Ni and Cr.
A gas discharge display device according to any one of claims 1 to 6. 8. A front substrate having a plurality of first electrodes, a first dielectric layer covering the first electrodes, a plurality of second electrodes, and a second covering the second electrodes. A back substrate having a dielectric layer of at least an inorganic material between at least the first electrode and the first dielectric layer or between the second electrode and the second dielectric layer. A gas discharge type display device comprising a layer, wherein the first electrode or the second electrode is formed by wet etching using the inorganic material layer. 9. The gas discharge type display device according to claim 8, wherein said inorganic material layer is formed using a blaster. 10. The gas discharge type display device according to claim 8, wherein said inorganic material layer is formed by using a laser. 11. A Cr layer serving as an uppermost layer of the inorganic material layer and the first electrode or the second electrode, wherein at least the first electrode or the second electrode is a Cr / Cu / Cr layer. 9. The gas discharge type display device according to claim 8, wherein said is formed using a blaster or a laser. 12. At least the first electrode or the second electrode is a Cr / Cu / Cr layer, and at least the Cr layer of the first electrode or the second electrode is formed using an alkaline etching solution. 9. The gas discharge type display device according to claim 8, wherein the display device is formed by wet etching. 13. The gas discharge type display device according to claim 8, wherein said inorganic material layer comprises two or more layers. 14. A gas discharge type display device according to claim 8, wherein said inorganic material layer is an ITO film or an alloy layer of SiO2 or Ni and Cr. 15. The gas discharge type display device according to claim 8, further comprising at least an insulating material layer between said inorganic material layer and said dielectric layer. 16. A front substrate having a plurality of first electrodes,
A back substrate having a plurality of second electrodes, comprising a material layer formed using a blaster on at least the first electrode or the second electrode, the first layer using the material layer A gas discharge type display device characterized in that said electrode or said second electrode is formed by wet etching. 17. A front substrate having a plurality of first electrodes,
A back substrate having a plurality of second electrodes, comprising a material layer formed using a laser on at least the first electrode or the second electrode, the first layer using the material layer A gas discharge type display device characterized in that said electrode or said second electrode is formed by wet etching. 18. A wiring board comprising a wiring pattern formed using a resist made of an inorganic material. 19. A wiring board comprising a wiring pattern formed by using a resist formed by blasting. 20. A wiring board comprising a wiring pattern formed by using a resist formed by a laser. 21. A front substrate having a plurality of transparent electrodes and a bus electrode formed on the transparent electrode, and a back substrate having a plurality of address electrodes, wherein at least the bus electrodes or the address electrodes are formed of Cr / Cu. /
Cr / ITO layer or Cr / Cu / Cr / SiO2 layer or Cr / Cu / Cr / I
A gas discharge type display device comprising a TO / SiO2 layer or an alloy layer of Cr / Cu / Cr / Ni and Cr.