JPH04345734A - Plasma display panel and manufacture thereof - Google Patents
Plasma display panel and manufacture thereofInfo
- Publication number
- JPH04345734A JPH04345734A JP11719791A JP11719791A JPH04345734A JP H04345734 A JPH04345734 A JP H04345734A JP 11719791 A JP11719791 A JP 11719791A JP 11719791 A JP11719791 A JP 11719791A JP H04345734 A JPH04345734 A JP H04345734A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- deposited film
- film
- vapor deposited
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 230000031700 light absorption Effects 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims abstract description 14
- 238000000059 patterning Methods 0.000 claims abstract description 7
- 229910052751 metal Inorganic materials 0.000 claims description 21
- 239000002184 metal Substances 0.000 claims description 21
- 239000010408 film Substances 0.000 abstract description 43
- 230000008020 evaporation Effects 0.000 abstract 3
- 238000001704 evaporation Methods 0.000 abstract 3
- 239000011104 metalized film Substances 0.000 abstract 3
- 238000009751 slip forming Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 30
- 239000011521 glass Substances 0.000 description 21
- 239000011651 chromium Substances 0.000 description 10
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 9
- 229910052804 chromium Inorganic materials 0.000 description 9
- 238000007740 vapor deposition Methods 0.000 description 8
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 7
- 102100039169 [Pyruvate dehydrogenase [acetyl-transferring]]-phosphatase 1, mitochondrial Human genes 0.000 description 7
- 101710126534 [Pyruvate dehydrogenase [acetyl-transferring]]-phosphatase 1, mitochondrial Proteins 0.000 description 7
- 229910000423 chromium oxide Inorganic materials 0.000 description 7
- 239000010409 thin film Substances 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 238000005019 vapor deposition process Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- ZTXONRUJVYXVTJ-UHFFFAOYSA-N chromium copper Chemical compound [Cr][Cu][Cr] ZTXONRUJVYXVTJ-UHFFFAOYSA-N 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000005394 sealing glass Substances 0.000 description 2
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- -1 potassium ferricyanide Chemical compound 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Gas-Filled Discharge Tubes (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は、プラズマディスプレイ
パネルおよびその製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma display panel and a method for manufacturing the same.
【０００２】プラズマディスプレイパネル（ＰＤＰ）は
、表示の輝度及びコントラストの点で優れることから、
ＯＡ機器の表示手段などとして広く用いられている。こ
のようなＰＤＰにおいて表示の視認性をさらに向上させ
ることが望まれている。[0002] Plasma display panels (PDPs) have excellent display brightness and contrast;
It is widely used as a display means for OA equipment. It is desired to further improve the visibility of display in such PDPs.
【０００３】0003
【従来の技術】ＰＤＰは、放電空間を介して対向する一
対のガラス基板、及び放電セルを画定する電極群などか
ら構成され、放電セルで生じるガス放電によって表示を
行う。2. Description of the Related Art A PDP is composed of a pair of glass substrates facing each other with a discharge space interposed therebetween, and a group of electrodes defining discharge cells, and displays by gas discharge generated in the discharge cells.
【０００４】特に高精細のＰＤＰでは、電極の形成に際
して、高精度のパターンを得るために薄膜法が用いられ
ている。すなわち、電極は、スパッタリング蒸着などに
よって形成した蒸着膜（薄膜）をフォトリソグラフィ法
を用いてパターンニングすることによって形成される。[0004] Particularly in high-definition PDPs, a thin film method is used to form electrodes in order to obtain highly accurate patterns. That is, the electrode is formed by patterning a vapor deposited film (thin film) formed by sputtering vapor deposition or the like using a photolithography method.
【０００５】一般には、電極として、電気的特性及びガ
ラス基板などとの密着性に優れたクロムー銅ークロムの
三層構造の金属薄膜が用いられている。[0005] Generally, a metal thin film having a three-layer structure of chromium-copper-chromium, which has excellent electrical properties and adhesion to a glass substrate, etc., is used as an electrode.
【０００６】なお、表示面側のガラス基板上の電極とし
て、ネサ膜やＩＴＯ膜などからなる透明電極を設ける場
合もあるが、その場合には、透明電極の導電性を補うた
めの補助電極（バス電極）として、細い幅の金属蒸着膜
が透明電極に重ねて設けられる。[0006] In some cases, a transparent electrode made of a Nesa film or an ITO film is provided as an electrode on the glass substrate on the display surface side, but in that case, an auxiliary electrode ( As a bus electrode, a narrow metal vapor-deposited film is provided to overlap the transparent electrode.
【０００７】[0007]
【発明が解決しようとする課題】上述にしたように金属
蒸着膜からなる電極（バス電極を含む）は、その表面が
光沢のある鏡面となる。[Problems to be Solved by the Invention] As described above, the electrodes (including bus electrodes) made of a metal vapor deposited film have a glossy mirror surface.
【０００８】したがって、表示面側のガラス基板の内面
上に電極を有したＰＤＰでは、表示面からみてガラス基
板の直下に電極が配置されることから、電極の表面での
外光の反射によって、表示面内で電極部分が放電による
発光とは無関係に輝いてしまい、そのために表示の視認
性が損なわれるという問題があった。[0008] Therefore, in a PDP that has electrodes on the inner surface of the glass substrate on the display surface side, since the electrodes are arranged directly below the glass substrate when viewed from the display surface, the reflection of external light on the surface of the electrodes causes There has been a problem in that the electrode portions within the display surface shine regardless of the light emitted by the discharge, which impairs the visibility of the display.
【０００９】本発明は、上述の問題に鑑み、外光の反射
による表示の視認性の低下を防止することを目的として
いる。SUMMARY OF THE INVENTION In view of the above-mentioned problems, it is an object of the present invention to prevent the visibility of display from decreasing due to reflection of external light.
【００１０】また、請求項２の発明は、表示の視認性の
低下を防止したＰＤＰを効率的に製造することを目的と
している。Another object of the invention is to efficiently manufacture a PDP that prevents deterioration in display visibility.
【００１１】[0011]
【課題を解決するための手段】請求項１の発明に係るＰ
ＤＰは、上述の課題を解決するため、図１に示すように
、表示面Ｈ側の基板１１の内面上に金属蒸着膜からなる
電極１３を有したプラズマディスプレイパネル１におい
て、前記電極１３の前記表示面Ｈ側に、当該電極１３に
重ねて光吸収層４０が設けられてなる。[Means for solving the problem] P according to the invention of claim 1
In order to solve the above-mentioned problems, DP is a plasma display panel 1 having an electrode 13 made of a metal vapor deposited film on the inner surface of a substrate 11 on the display surface H side, as shown in FIG. A light absorption layer 40 is provided on the display surface H side, overlapping the electrode 13.
【００１２】請求項２の発明に係る製造方法は、表示面
Ｈ側の基板１１上に暗色蒸着膜４０ａと金属蒸着膜１３
ａとを順に連続的に成膜する蒸着工程と、前記金属蒸着
膜１３ａ及び前記暗色蒸着膜４０ａを部分的に除去する
ことによって、電極１３及びその表面を覆う光吸収層４
０を形成するパターンニング工程とを含む。In the manufacturing method according to the second aspect of the invention, a dark color vapor deposition film 40a and a metal vapor deposition film 13 are formed on the substrate 11 on the display surface H side.
The light absorbing layer 4 covering the electrode 13 and its surface is formed by a vapor deposition step of sequentially and continuously forming the metal vapor deposited film 13a and the dark color vapor deposited film 40a.
0 patterning process.
【００１３】[0013]
【作用】金属蒸着膜からなる電極１３は、光吸収層４０
によって表示面Ｈに対して被覆され、これによって電極
１３の表面での外光の反射が防止される。[Function] The electrode 13 made of a metal vapor-deposited film has a light absorption layer 40
The display surface H is coated with the electrode 13, thereby preventing reflection of external light on the surface of the electrode 13.
【００１４】電極１３及び光吸収層４０は、蒸着工程で
連続的に成膜した暗色蒸着膜４０ａと金属蒸着膜１３ａ
とをパターンニングすることによって形成される。The electrode 13 and the light absorption layer 40 are a dark color vapor deposited film 40a and a metal vapor deposited film 13a that are successively formed in a vapor deposition process.
It is formed by patterning.
【００１５】[0015]
【実施例】図１は本発明に係るＰＤＰ１の構造を模式的
に示す断面図である。Embodiment FIG. 1 is a sectional view schematically showing the structure of a PDP 1 according to the present invention.
【００１６】ＰＤＰ１は、表示面Ｈ側のガラス基板１１
、背面側のガラス基板２１、各ガラス基板１１，２１の
内面上に形成された電極１３，２３、低融点ガラスから
なる誘電体層１５，２５、ＭｇＯからなる保護膜１７，
２７、ガラス基板１１，２１の周囲を封止する封止ガラ
ス３１、及び電極１３の表示面Ｈ側に各電極１３に重ね
て設けられた光吸収層４０などから構成されたマトリク
ス表示方式の対向放電型のＰＤＰである。The PDP 1 has a glass substrate 11 on the display surface H side.
, a glass substrate 21 on the back side, electrodes 13, 23 formed on the inner surface of each glass substrate 11, 21, dielectric layers 15, 25 made of low melting point glass, a protective film 17 made of MgO,
27, a matrix display type counter comprising a sealing glass 31 that seals the periphery of the glass substrates 11 and 21, and a light absorption layer 40 provided on the display surface H side of the electrodes 13 so as to overlap each electrode 13. It is a discharge type PDP.
【００１７】図示しないスペーサによって間隙寸法が規
定された内部の放電空間３０には、キセノンとネオンを
混合した放電ガスが封入されている。また、格子状に対
向配置された電極１３，２３の交差部には、表示のドッ
トに対応した放電セルが画定される。A discharge gas containing a mixture of xenon and neon is filled in an internal discharge space 30 whose gap size is defined by a spacer (not shown). Further, discharge cells corresponding to display dots are defined at the intersections of the electrodes 13 and 23 which are arranged facing each other in a grid pattern.
【００１８】電極１３，２３は、クロムー銅ークロムの
三層構造の金属薄膜からなり、１００００Å程度の厚さ
を有する。クロム層は白銀色を呈しその表面は光沢のあ
る鏡面となる。The electrodes 13 and 23 are made of metal thin films having a three-layer structure of chromium-copper-chromium, and have a thickness of about 10,000 Å. The chromium layer has a white silver color and its surface is a shiny mirror.
【００１９】しかし、ＰＤＰ１では、表示面Ｈ側の電極
１３とガラス基板１１との間に、クロム層に比べて暗色
を呈する例えば酸化クロム又は酸化珪素からなる光吸収
層４０が設けられており、これによって外光が吸収され
、電極１３の最上層（クロム層）での外光の反射が防止
される。However, in the PDP 1, a light absorption layer 40 made of, for example, chromium oxide or silicon oxide, which has a darker color than the chromium layer, is provided between the electrode 13 on the display surface H side and the glass substrate 11. This absorbs external light and prevents reflection of external light on the uppermost layer (chromium layer) of the electrode 13.
【００２０】次にＰＤＰ１の製造方法について説明する
。Next, a method for manufacturing the PDP 1 will be explained.
【００２１】図２は本発明に係るＰＤＰ１の各製造段階
を示す部分断面図である。FIG. 2 is a partial sectional view showing each manufacturing step of the PDP 1 according to the present invention.
【００２２】蒸着による成膜を行うため、ガラス基板１
１を図示しないスパッタリング蒸着装置のチャンバー内
に配置する。ここで使用するスパッタリング蒸着装置は
、チャンバー内に互いに異なる蒸着物質からなる複数の
ターゲットが装填可能であり、ガラス基板１１を搬送し
て各ターゲットに順次対向させることによって、連続的
に複層の蒸着膜を形成することができる。[0022] In order to form a film by vapor deposition, a glass substrate 1 is
1 is placed in a chamber of a sputtering deposition apparatus (not shown). The sputtering deposition apparatus used here can load a plurality of targets made of different deposition substances into a chamber, and can continuously deposit multiple layers by transporting the glass substrate 11 and facing each target in turn. A film can be formed.
【００２３】チャンバーの排気を行った後に酸素を導入
し、まず、酸素雰囲気中でクロムターゲット（Ｃｒ）の
スパッタリングを行う。これにより、蒸発したクロムと
酸素とが化合して蒸着することから、ガラス基板１１上
に酸化クロムからなる暗色蒸着膜４０ａが形成される［
図２（ａ）］。スパッタリング時間は暗色蒸着膜４０ａ
の膜厚が１０００Å程度になるように選定する。After the chamber is evacuated, oxygen is introduced, and first, a chromium target (Cr) is sputtered in an oxygen atmosphere. As a result, the evaporated chromium and oxygen are combined and deposited, so that a dark-colored deposited film 40a made of chromium oxide is formed on the glass substrate 11.
Figure 2(a)]. Sputtering time is dark color deposited film 40a
The film thickness is selected to be approximately 1000 Å.
【００２４】なお、不活性ガス雰囲気中で酸化クロムタ
ーゲットのスパッタリングを行い、これによって酸化ク
ロムからなる暗色蒸着膜４０ａを形成することもできる
。また、酸化クロムの暗色蒸着膜４０ａを形成する代わ
りに、酸化珪素ターゲットを用いて酸化珪素からなる蒸
着膜を形成してもよい。Note that it is also possible to perform sputtering with a chromium oxide target in an inert gas atmosphere, thereby forming the dark-colored vapor deposited film 40a made of chromium oxide. Further, instead of forming the dark-colored vapor deposited film 40a of chromium oxide, a vapor deposited film made of silicon oxide may be formed using a silicon oxide target.
【００２５】続いて、再びチャンバーの排気を行った後
にアルゴンなどの不活性ガスを導入する。不活性ガス雰
囲気中でクロムターゲット及び銅ターゲットのスパッタ
リングを行い、クロム層１３１、銅層１３２、クロム層
１３３を順に蒸着して三層構造の金属蒸着膜１３ａ（膜
厚は１００００Å程度）を暗色蒸着膜４０ａ上に形成す
る［図２（ｂ）］。Subsequently, after the chamber is evacuated again, an inert gas such as argon is introduced. A chromium target and a copper target are sputtered in an inert gas atmosphere, and a chromium layer 131, a copper layer 132, and a chromium layer 133 are sequentially deposited to form a three-layer metal deposition film 13a (film thickness is about 10,000 Å) in dark color. It is formed on the film 40a [FIG. 2(b)].
【００２６】以上の蒸着工程を終えた後、パターンニン
グ工程に移る。パターンニング工程では、感光性のレジ
ストの塗布、パターン露光、レジスト現像の一連のフォ
トリソグラフィ処理を行い、金属蒸着膜１３ａ上に所定
パターンのレジスト層６０をエッチングマスクとして設
ける［図２（ｃ）］。[0026] After completing the above vapor deposition process, a patterning process is started. In the patterning step, a series of photolithography processes including application of a photosensitive resist, pattern exposure, and resist development are performed to form a resist layer 60 with a predetermined pattern as an etching mask on the metal vapor deposited film 13a [FIG. 2(c)] .
【００２７】次に、例えば、塩酸（クロムのエッチャン
ト）及び塩化第２鉄（銅のエッチャント）を用いて金属
蒸着膜１３ａを部分的に除去（エッチング）する。そし
て、引き続いてレジスト層６０をエッチングマスクとし
て、例えばフェリシアン化カリと水酸化ナトリウムの混
合溶液を用いて暗色蒸着膜４０ａをエッチングする。Next, the metal vapor deposited film 13a is partially removed (etched) using, for example, hydrochloric acid (chromium etchant) and ferric chloride (copper etchant). Then, using the resist layer 60 as an etching mask, the dark vapor deposited film 40a is etched using, for example, a mixed solution of potassium ferricyanide and sodium hydroxide.
【００２８】このように金属蒸着膜１３ａ及び暗色蒸着
膜４０ａをエッチングすることにより、暗色蒸着膜４０
ａからなる光吸収層４０と金属蒸着膜１３ａからなる電
極１３とが同一の平面パターンでガラス基板１１上に形
成される［図２（ｄ）］。By etching the metal vapor deposited film 13a and the dark color vapor deposited film 40a in this way, the dark color vapor deposited film 40a is etched.
A light absorbing layer 40 made of A and an electrode 13 made of a metal vapor deposited film 13a are formed on the glass substrate 11 in the same planar pattern [FIG. 2(d)].
【００２９】その後、電極１３を被覆する誘電体層１５
及び保護膜１７を設けたガラス基板１１と、別に電極２
３及び誘電体層２５などを設けた背面側のガラス基板２
１とを電極１３，２３が直交するように対向配置し、封
止ガラス３１による封止及び放電ガスの封入などを経て
ＰＤＰ１を完成させる。After that, a dielectric layer 15 covering the electrode 13 is formed.
and a glass substrate 11 provided with a protective film 17 and an electrode 2 separately.
3 and a back side glass substrate 2 provided with a dielectric layer 25, etc.
1 are placed facing each other so that the electrodes 13 and 23 are perpendicular to each other, and the PDP 1 is completed through sealing with a sealing glass 31 and filling with discharge gas.
【００３０】上述の実施例によれば、光吸収層４０を蒸
着膜としたので、電極１３を形成するための蒸着工程に
際して、金属蒸着膜１３ａの蒸着に先立って１層の蒸着
を行うだけで光吸収層４０を設けることができ、光吸収
層４０を設けるための別途の工程が不要となることから
ＰＤＰ１を効率的に製造することができる。さらに、電
極１３の金属材料の酸化物（酸化クロム）によって光吸
収層４０となる暗色蒸着膜４０ａを形成するようにした
ので、蒸着雰囲気を変更するだけで暗色蒸着膜４０ａと
金属蒸着膜１３ａとを連続的に形成することができる。According to the embodiment described above, since the light absorbing layer 40 is a vapor deposited film, in the vapor deposition process for forming the electrode 13, only one layer is deposited prior to the vapor deposition of the metal vapor deposited film 13a. Since the light absorption layer 40 can be provided and a separate process for providing the light absorption layer 40 is not required, the PDP 1 can be manufactured efficiently. Furthermore, since the dark-colored vapor deposited film 40a that becomes the light absorption layer 40 is formed using the oxide (chromium oxide) of the metal material of the electrode 13, the dark-colored vapor deposited film 40a and the metal vapor deposited film 13a can be changed by simply changing the vapor deposition atmosphere. can be formed continuously.
【００３１】上述の実施例において、蒸着の手法として
真空蒸着法を用いてもよい、また、エッチングの手法と
してウエットエッチングに代えてドライエッチングを用
いてもよい。In the above-described embodiments, a vacuum evaporation method may be used as the vapor deposition method, and dry etching may be used instead of wet etching as the etching method.
【００３２】上述の実施例においては、酸化クロム又は
酸化珪素からなる光吸収層４０を設けたが、光吸収層４
０の材質としては、電極１３の表層に比べて暗色であり
且つガラス基板１１及び電極１３との密着性が良好であ
るものを適宜選定することができる。例えば暗色顔料で
着色した低融点ガラスを用いてもよい。In the above embodiment, the light absorption layer 40 made of chromium oxide or silicon oxide was provided, but the light absorption layer 40
As the material for the electrode 13, a material that is darker in color than the surface layer of the electrode 13 and has good adhesion to the glass substrate 11 and the electrode 13 can be appropriately selected. For example, a low melting point glass colored with a dark pigment may be used.
【００３３】上述の実施例においては、三層構造の金属
蒸着膜１３ａからなる電極１３を例示したが、電極１３
は１層構造の薄膜であってもよい。また、本発明は、表
示面Ｈ側のガラス基板１１に透明電極に重ねて薄膜のバ
ス電極を設けたＰＤＰにも適用することができる。In the above-mentioned embodiment, the electrode 13 made of the three-layered metal vapor deposited film 13a was exemplified, but the electrode 13
may be a thin film with a single layer structure. Furthermore, the present invention can also be applied to a PDP in which a thin film bus electrode is provided on the glass substrate 11 on the display surface H side, overlapping a transparent electrode.
【発明の効果】本発明によれば、電極の表面での外光の
反射による表示の視認性の低下を防止することができる
。According to the present invention, it is possible to prevent a decrease in display visibility due to reflection of external light on the surface of an electrode.
【００３４】請求項２の発明によれば、表示の視認性の
低下を防止したＰＤＰを効率的に製造することができる
。According to the second aspect of the invention, it is possible to efficiently manufacture a PDP that prevents deterioration in display visibility.
【図１】本発明に係るＰＤＰの構造を模式的に示す断面
図である。FIG. 1 is a cross-sectional view schematically showing the structure of a PDP according to the present invention.
【図２】本発明に係るＰＤＰの各製造段階を示す部分断
面図である。FIG. 2 is a partial cross-sectional view showing each manufacturing step of a PDP according to the present invention.
１ ＰＤＰ Ｈ 表示面 １１ ガラス基板（基板） １３ 電極 ４０ 光吸収層 １３ａ 金属蒸着膜 ４０ａ 暗色蒸着膜 1 PDP H Display surface 11 Glass substrate (substrate) 13 Electrode 40 Light absorption layer 13a Metal evaporated film 40a Dark vapor deposited film
Claims (2)
金属蒸着膜からなる電極（１３）を有したプラズマディ
スプレイパネル（１）において、前記電極（１３）の前
記表示面（Ｈ）側に、当該電極（１３）に重ねて光吸収
層（４０）が設けられてなることを特徴とするプラズマ
ディスプレイパネル。1. A plasma display panel (1) having an electrode (13) made of a metal vapor deposited film on the inner surface of a substrate (11) on the side of the display surface (H), wherein the display surface ( A plasma display panel characterized in that a light absorption layer (40) is provided on the H) side so as to overlap the electrode (13).
金属蒸着膜からなる電極（１３）を有したプラズマディ
スプレイパネル（１）の製造方法であって、前記基板（
１１）上に暗色蒸着膜（４０ａ）と金属蒸着膜（１３ａ
）とを順に連続的に成膜する蒸着工程と、前記金属蒸着
膜（１３ａ）及び前記暗色蒸着膜（４０ａ）を部分的に
除去することによって、前記電極（１３）及びその表面
を覆う光吸収層（４０）を形成するパターンニング工程
とを含むことを特徴とするプラズマディスプレイパネル
の製造方法。2. A method for manufacturing a plasma display panel (1) having an electrode (13) made of a metal vapor deposited film on the inner surface of a substrate (11) on the display surface (H) side, the method comprising:
11) Dark vapor deposited film (40a) and metal vapor deposited film (13a) on top.
), and by partially removing the metal vapor deposited film (13a) and the dark color vapor deposited film (40a), light absorption covering the electrode (13) and its surface is achieved. A method of manufacturing a plasma display panel, comprising a patterning step of forming a layer (40).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11719791A JP3122482B2 (en) | 1991-05-22 | 1991-05-22 | Plasma display panel and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11719791A JP3122482B2 (en) | 1991-05-22 | 1991-05-22 | Plasma display panel and method of manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04345734A true JPH04345734A (en) | 1992-12-01 |
| JP3122482B2 JP3122482B2 (en) | 2001-01-09 |
Family
ID=14705800
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11719791A Expired - Lifetime JP3122482B2 (en) | 1991-05-22 | 1991-05-22 | Plasma display panel and method of manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3122482B2 (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999046793A1 (en) * | 1998-03-09 | 1999-09-16 | Matsushita Electric Industrial Co., Ltd. | Electrode for high contrast gas discharge panel and the method for manufacturing the same |
| JP2002343260A (en) * | 2001-05-04 | 2002-11-29 | Samsung Sdi Co Ltd | Substrate, method of manufacturing the same, and plasma display device having the same |
| KR100520392B1 (en) * | 1999-04-19 | 2005-10-12 | 현대 프라즈마 주식회사 | Plasma display panel having cylinder structure and method for fabricating the same |
| WO2006035565A1 (en) * | 2004-09-27 | 2006-04-06 | Asahi Glass Company, Limited | Method for manufacturing electrode and/or black stripe for plasma display substrate |
| WO2006068153A1 (en) * | 2004-12-22 | 2006-06-29 | Asahi Glass Co., Ltd. | Pattern forming method and electronic circuit manufactured by same |
| WO2006070648A1 (en) * | 2004-12-27 | 2006-07-06 | Asahi Glass Co., Ltd. | Pattern forming method and electronic circuit |
| WO2006070649A1 (en) * | 2004-12-27 | 2006-07-06 | Asahi Glass Co., Ltd. | Pattern forming method and electronic circuit |
| KR100603314B1 (en) * | 2003-11-25 | 2006-07-20 | 삼성에스디아이 주식회사 | Plasma display pannel |
| EP2226829A1 (en) * | 1995-08-25 | 2010-09-08 | Hitachi Plasma Patent Licensing Co., Ltd. | A surface discharge plasma display panel and a manufacturing method therefor |
-
1991
- 1991-05-22 JP JP11719791A patent/JP3122482B2/en not_active Expired - Lifetime
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2226829A1 (en) * | 1995-08-25 | 2010-09-08 | Hitachi Plasma Patent Licensing Co., Ltd. | A surface discharge plasma display panel and a manufacturing method therefor |
| WO1999046793A1 (en) * | 1998-03-09 | 1999-09-16 | Matsushita Electric Industrial Co., Ltd. | Electrode for high contrast gas discharge panel and the method for manufacturing the same |
| KR100520392B1 (en) * | 1999-04-19 | 2005-10-12 | 현대 프라즈마 주식회사 | Plasma display panel having cylinder structure and method for fabricating the same |
| JP2002343260A (en) * | 2001-05-04 | 2002-11-29 | Samsung Sdi Co Ltd | Substrate, method of manufacturing the same, and plasma display device having the same |
| KR100603314B1 (en) * | 2003-11-25 | 2006-07-20 | 삼성에스디아이 주식회사 | Plasma display pannel |
| WO2006035565A1 (en) * | 2004-09-27 | 2006-04-06 | Asahi Glass Company, Limited | Method for manufacturing electrode and/or black stripe for plasma display substrate |
| JPWO2006035565A1 (en) * | 2004-09-27 | 2008-05-15 | 旭硝子株式会社 | Method for manufacturing electrode and / or black stripe for plasma display substrate |
| US7772778B2 (en) | 2004-09-27 | 2010-08-10 | Asahi Glass Company, Limited | Method for forming electrodes and/or black stripes for plasma display substrate |
| KR101026659B1 (en) * | 2004-09-27 | 2011-04-04 | 아사히 가라스 가부시키가이샤 | Method for manufacturing electrode and/or black stripe for plasma display substrate |
| WO2006068153A1 (en) * | 2004-12-22 | 2006-06-29 | Asahi Glass Co., Ltd. | Pattern forming method and electronic circuit manufactured by same |
| WO2006070648A1 (en) * | 2004-12-27 | 2006-07-06 | Asahi Glass Co., Ltd. | Pattern forming method and electronic circuit |
| WO2006070649A1 (en) * | 2004-12-27 | 2006-07-06 | Asahi Glass Co., Ltd. | Pattern forming method and electronic circuit |
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| Publication number | Publication date |
|---|---|
| JP3122482B2 (en) | 2001-01-09 |
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