WO2006062576A2 - Method and apparatus for improved baffle plate - Google Patents

Method and apparatus for improved baffle plate Download PDF

Info

Publication number
WO2006062576A2
WO2006062576A2 PCT/US2005/036873 US2005036873W WO2006062576A2 WO 2006062576 A2 WO2006062576 A2 WO 2006062576A2 US 2005036873 W US2005036873 W US 2005036873W WO 2006062576 A2 WO2006062576 A2 WO 2006062576A2
Authority
WO
WIPO (PCT)
Prior art keywords
baffle plate
plate assembly
combination
plasma
assembly according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2005/036873
Other languages
French (fr)
Other versions
WO2006062576A3 (en
Inventor
Steven T. Fink
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2007545448A priority Critical patent/JP5361189B2/en
Publication of WO2006062576A2 publication Critical patent/WO2006062576A2/en
Publication of WO2006062576A3 publication Critical patent/WO2006062576A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32633—Baffles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49995—Shaping one-piece blank by removing material

Definitions

  • the present invention relates to a method and apparatus for utilizing a baffle plate in a plasma processing system, and methods of making the same.
  • IC integrated circuits
  • plasma is formed within the processing system under vacuum conditions by heating electrons to energies sufficient to sustain ionizing collisions with a supplied process gas.
  • the heated electrons can have energy sufficient to sustain dissociative collisions and, therefore, a specific set of gases under predetermined conditions (e.g., chamber pressure, gas flow rate, etc.) are chosen to produce a population of charged species and chemically reactive species suitable to the particular process being performed within the system (e.g., etching processes where materials are removed from the substrate or deposition processes where materials are added to the substrate).
  • the present invention relates to a method of fabricating a baffle plate assembly, surrounding a substrate holder in a plasma processing system comprised of forming a baffle plate blank and subsequently forming one or more pumping passageways wherein one or more features of the baffle plate blank are modified by planar material removal forming the pumping passages.
  • the present invention also relates to a baffle plate assembly, which surrounds a substrate holder in a plasma processing system and comprises a baffle plate blank having one or more pumping passages wherein one or more features of the baffle plate blank are modified by planar material removal forming the pumping passages.
  • the present invention also relates to a plasma process apparatus with baffle a plate assembly comprising a process chamber, a plasma generating system configured and arranged to produce a plasma in the process chamber, a gas source configured to introduce gases into the process chamber, a pressure control system to maintain a selected pressure within the process chamber, a substrate holder configured to hold a substrate during substrate processing, and a baffle plate assembly.
  • the baffle plate assembly is disposed radially outward from the substrate and formed from a baffle plate blank with one or more pumping passages formed from planar material removal from the baffle
  • FIG. 1 illustrates a schematic block diagram of a plasma processing system according to an embodiment of the present invention
  • FIG. 2 presents a method of fabricating a baffle plate assembly, surrounding a substrate holder in a plasma processing system
  • FIG. 3 A presents a plan view of a baffle plate blank according to the present invention
  • FIG. 3B presents a cross-sectional view of the baffle plate blank of FIG. 3 A;
  • FIG. 3C presents a cross-sectional view of the baffle plate blank of FIG. 3B, after planar material removal;
  • FIG. 4 A presents a plan view of a baffle plate according to another embodiment of the present invention;
  • FIG. 4B presents a plan view of a baffle plate according to another embodiment of the present invention;
  • FIG. 4C presents a plan view of a baffle plate according to another embodiment of the present invention.
  • a baffle plate can be employed to aid in confining the plasma to the processing region adjacent to the substrate, as well as to effect the uniformity of fluid mechanic properties in the processing region adjacent to the substrate.
  • the baffle plate is configured to surround the substrate holder and, in many cases, the baffle plate is physically coupled to the substrate holder using fasteners.
  • the baffle plate comprises a plurality of openings to permit the passage of process gasses, reactants and reaction products to the vacuum pumping system.
  • a plasma processing system 1 is depicted in FIG. 1 comprising a plasma processing chamber 10, an upper assembly 20, an electrode plate assembly 24, a substrate holder 30 for supporting the substrate 35, and a pumping duct 40 coupled to a vacuum pump (not shown) for providing a reduced pressure atmosphere 11 in plasma processing chamber 10.
  • Plasma processing chamber 10 can facilitate the formation of a process plasma in process space 12 adjacent to the substrate 35.
  • the plasma processing system 1 can be configured to process substrates of any size, such as 200mm substrates, 300mm substrates, or larger.
  • electrode plate assembly 24 comprises an electrode plate 26 and an electrode 28.
  • upper assembly 20 can also comprise a cover, a gas injection assembly, and/or an upper impedance match network.
  • the electrode plate assembly 24 can be coupled to an RF source.
  • the upper assembly 20 comprises a cover coupled to the electrode plate assembly 24, wherein the electrode plate assembly 24 is maintained at an electrical potential equivalent to that of the plasma processing chamber 10.
  • the plasma processing chamber 10, the upper assembly 20, and the electrode plate assembly 24 can be electrically connected to ground potential.
  • Plasma processing chamber 10 can further comprise an optical viewport 16 coupled to a deposition shield.
  • Optical viewport 16 can comprise an optical window 17 coupled to the backside of an optical window deposition shield 18, and an optical window flange 19 can be configured to couple the optical window 17 to the optical window deposition shield 18.
  • Sealing members such as O-rings, can be provided between the optical window flange 19 and the optical window 17, between the optical window 17 and the optical window deposition shield 18 and the plasma processing chamber 10.
  • Optical viewport 16 can permit monitoring of optical emission from the processing plasma in process space 12.
  • Substrate holder 30 can further comprise a vertical translational device 50 surrounded by a bellows 52 coupled to the substrate holder 30 and the plasma processing chamber 10, and configured to seal the vertical translational device 50 from the reduced pressure atmosphere 11 in plasma processing chamber 10. Additionally, a bellows shield 54 can be coupled to the substrate holder 30 and configured to protect the bellows 52 from the processing plasma. Substrate holder 10 can further be coupled to a focus ring 60, and/or a shield ring 62. Furthermore, a baffle plate 64 can extend about a periphery of the substrate holder 30.
  • Substrate 35 can be transferred into and out of plasma processing chamber 10 through a slot valve (not shown) and/or a chamber feed-thru (not shown) via a robotic substrate transfer system where it is received by substrate lift pins (not shown) housed within substrate holder 30 and mechanically translated by devices housed therein. Once substrate 35 is received from substrate transfer system, it is lowered to an upper surface of substrate holder 30.
  • Substrate 35 can be affixed to the substrate holder 30 via an electrostatic clamping system, or a mechanical clamping system.
  • substrate holder 30 can further include a cooling system including a re-cirulating coolant flow that receives heat from the substrate holder 30 and transfers heat to a heat exchanger system (not shown), or when heating, transfers heat from the heat exchanger system.
  • gas can be delivered to the back-side of substrate 35 via a backside gas system to improve the gas-gap thennal conductance between substrate 35 and substrate holder 30.
  • Such a system can be utilized when temperature control of the substrate is required at elevated or reduced temperatures.
  • heating elements such as resistive heating elements, or thermo-electric heaters/coolers can be included.
  • substrate holder 30 can comprise an electrode through which RF power is coupled to the processing plasma in process space 12.
  • substrate holder 30 can be electrically biased at a RF voltage via the transmission of RF power from a RF generator (not shown) through an impedance match network (not shown) to substrate holder 30.
  • the RF bias can serve to heat electrons to form and maintain plasma.
  • the system can operate as a reactive ion etch (RIE) reactor, wherein the chamber and upper gas injection electrode serve as ground surfaces.
  • RIE reactive ion etch
  • a typical frequency for the RF bias can range from approximately 1 MHz to approximately 100 MHz and can be approximately 13.56 MHz.
  • RF systems for plasma processing are well known to those skilled in the art.
  • the processing plasma in process space 12 can be formed using a parallel-plate, capacitively coupled plasma (CCP) source, or an inductively coupled plasma (ICP) source, or any combination thereof, and with or without magnet systems.
  • the processing plasma in process space 12 is formed from the launching of a Helicon wave.
  • the processing plasma in process space 12 is formed from a propagating surface wave.
  • the method begins in 201 with first forming a baffle plate blank.
  • the baffle plate blank is configured with one or more features that when modified by planar material removal form pumping passageways in the baffle plate blank, thus forming a baffle plate assembly.
  • the baffle plate blank including features to be modified, can be formed by metal casting, metal stamping, machining, ceramic fabrication, molding, or quartz fabrication, or any combination thereof.
  • one or more pumping passageways are formed in the baffle plate blank by planar surface removal of the baffle plate blank.
  • Planar material removal can be performed on at least one portion of one surface of the baffle plate blank.
  • Planar surface removal to baffle plate blank can be performed by milling, grinding, lapping, sanding, planing and/or etching.
  • the planar surface removal process can be a single
  • Baffle plate blank 300 is configured to be capable of surrounding a substrate holder in a plasma processing system.
  • the baffle plate blank 300 is made from aluminum, alumina, silicon, quartz, carbon, silica nitride, and/or ceramic.
  • the baffle plate blank 300 is configured with one or more closed pumping features 301.
  • FIG. 3B identifies a cross-sectional view of baffle plate blank 300 illustrating several closed pumping features 301.
  • Baffle plate blank has an upper surface
  • baffle plate assembly 310 is modified by planar material removal to form a new lower surface 308, open pumping passages 302 are formed in the baffle plate blank 300, thus forming a baffle plate assembly 310.
  • a protective barrier can be formed on any surface of the baffle plate assembly 310.
  • the protective barrier can, for example, facilitate the provision of an erosion resistant surface when the baffle plate assembly 310 is exposed to harsh processing environments, such as plasma.
  • the protective barrier can be formed by providing a surface anodization on one or more surfaces, providing a spray coating on one or more surfaces, and/or subjecting one or more surfaces to plasma electrolytic oxidation.
  • the protective barrier can comprise a layer of a Ill-column element and/or a Lanthanon element.
  • the protective barrier can comprise Al 2 O 3 , Yttria (Y 2 O 3 ), Sc 2 O 3 , Sc 2 F 3 , YF 3 , La 2 O 3 , CeO 2 , Eu 2 O 3 , and/or DyO 3 .
  • Methods of anodizing aluminum components and applying spray coatings are well known to those skilled in the art of surface material treatment.
  • All surfaces on the baffle plate assembly 310 can be provided with the protective barrier, applied using any of the techniques described above.
  • all surfaces on the baffle plate 310, except for a selected portion of a surface or surfaces, can be provided with the protective barrier, applied using any of the techniques described above.
  • any region Prior to the application of the protective barrier to the surfaces of the baffle plate assembly 310, any region can be masked in order to prevent the formation of the barrier layer thereon. Alternatively, following the application of the protective barrier to the surfaces of the baffle plate assembly 310 any region can be processed to remove the barrier layer formed thereon.
  • the one or more pumping passages 302 can comprise slots aligned in a radial direction. As shown, the slots can be spaced evenly azimuthally. In an alternate embodiment of the present invention, the slots can be spaced unevenly azimuthally. In an alternate embodiment of the present invention, the slots can be slanted and, therefore aligned, evenly partially in a radial direction and an azimuthal direction. In an alternate embodiment of the present invention, the slots can be slanted and, therefore aligned, unevenly partially in a radial direction and an azimuthal direction.
  • the slots can be complex geometries aligned radially, slanted, evenly spaced and/or unevenly spaced.
  • the slots or other openings can be of any desired configuration.
  • FIG. 4A identifies a baffle plate assembly 410 with pumping passages 420 configured in a complex slot configuration, centered with respect to the baffle plate assembly 410 and evenly spaced azimuthally.
  • the pumping passages can include at least one orifice.
  • the pumping passages 440 comprise a plurality of orifices having a constant size and uniform distribution on the baffle plate assembly 430.
  • the pumping passages can comprise a plurality of orifices, wherein the orifice size, distribution (or number density), and/or orifice shape varies across a baffle plate assembly. For example, when a vacuum pump (not shown) accesses a processing chamber 10 through a pumping duct 40, as shown in FIG. 1, the number of pumping passages can be reduced local to the entrance to the pumping duct 40 in order to correct for the non-uniform pressure field inherent to such an arrangement.
  • pumping passages can include at least one slot and at least one orifice. Varieties of alternate arrangements of these pumping features can utilize any of the alternates described above or any other shape or configuration.
  • FIG. 4C identifies a baffle plate assembly 450 with multiple orifices 460, comprised of English language characters.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

An apparatus related to plasma chambers (10) used for processing semiconductor substrates (35) and specifically to improvements in pumping baffle plates (64) used in plasma sources. An apparatus and method for making a baffle plate assembly formed from a modified baffle plate blank wherein a variety of pumping features (302) are formed in the baffle plate blank and opened in a planar material removal operation.

Description

TITLE OF THE INVENTION METHOD AND APPARATUS FOR IMPROVED BAFFLE PLATE
FIELD OF THE INVENTION
[0001] The present invention relates to a method and apparatus for utilizing a baffle plate in a plasma processing system, and methods of making the same.
BACKGROUND OF THE INVENTION
[0002] The fabrication of integrated circuits (IC) in the semiconductor industry typically employs plasma to create and assist surface chemistry within a vacuum processing system necessary to remove material from and deposit material to a substrate. In general, plasma is formed within the processing system under vacuum conditions by heating electrons to energies sufficient to sustain ionizing collisions with a supplied process gas. Moreover, the heated electrons can have energy sufficient to sustain dissociative collisions and, therefore, a specific set of gases under predetermined conditions (e.g., chamber pressure, gas flow rate, etc.) are chosen to produce a population of charged species and chemically reactive species suitable to the particular process being performed within the system (e.g., etching processes where materials are removed from the substrate or deposition processes where materials are added to the substrate).
[0003] In the prior art, plasma has been attenuated in the process chamber utilizing various baffle plates. One function of the attenuation has been to improve the confinement of the plasma in the process chamber. Another function of these plates has been to keep plasma from entering areas where harm could occur to mechanical components. Prior baffle plate designs utilize slots or orifices of various configurations to attenuate or confine the plasma. Typical baffle plates utilize hundreds of slot features or thousands of orifice features. These slot and orifice features add considerable cost to produce the typical baffle plate.
SUMMARY OF THE INVENTION
[0004] The present invention relates to a method of fabricating a baffle plate assembly, surrounding a substrate holder in a plasma processing system comprised of forming a baffle plate blank and subsequently forming one or more pumping passageways wherein one or more features of the baffle plate blank are modified by planar material removal forming the pumping passages.
[0005] The present invention also relates to a baffle plate assembly, which surrounds a substrate holder in a plasma processing system and comprises a baffle plate blank having one or more pumping passages wherein one or more features of the baffle plate blank are modified by planar material removal forming the pumping passages.
[0006] The present invention also relates to a plasma process apparatus with baffle a plate assembly comprising a process chamber, a plasma generating system configured and arranged to produce a plasma in the process chamber, a gas source configured to introduce gases into the process chamber, a pressure control system to maintain a selected pressure within the process chamber, a substrate holder configured to hold a substrate during substrate processing, and a baffle plate assembly. The baffle plate assembly is disposed radially outward from the substrate and formed from a baffle plate blank with one or more pumping passages formed from planar material removal from the baffle
plate blank.
BREIF DESCRIPTION OF THE DRAWINGS [0007] The accompanying drawings, which are incorporated in and constitute a part of the specification, illustrate embodiments of the invention, and together with the general description given above and the detailed description of the embodiments given below, serve to explain the principles of the invention wherein: [0008] FIG. 1 illustrates a schematic block diagram of a plasma processing system according to an embodiment of the present invention; [0009] FIG. 2 presents a method of fabricating a baffle plate assembly, surrounding a substrate holder in a plasma processing system; [0010] FIG. 3 A presents a plan view of a baffle plate blank according to the present invention;
[0011] FIG. 3B presents a cross-sectional view of the baffle plate blank of FIG. 3 A; [0012] FIG. 3C presents a cross-sectional view of the baffle plate blank of FIG. 3B, after planar material removal; [0013] FIG. 4 A presents a plan view of a baffle plate according to another embodiment of the present invention; [0014] FIG. 4B presents a plan view of a baffle plate according to another embodiment of the present invention; and [0015] FIG. 4C presents a plan view of a baffle plate according to another embodiment of the present invention.
DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0016] In plasma processing, a baffle plate can be employed to aid in confining the plasma to the processing region adjacent to the substrate, as well as to effect the uniformity of fluid mechanic properties in the processing region adjacent to the substrate. For conventional plasma processing systems, the baffle plate is configured to surround the substrate holder and, in many cases, the baffle plate is physically coupled to the substrate holder using fasteners. In general, the baffle plate comprises a plurality of openings to permit the passage of process gasses, reactants and reaction products to the vacuum pumping system.
[0017] According to an embodiment of the present invention, a plasma processing system 1 is depicted in FIG. 1 comprising a plasma processing chamber 10, an upper assembly 20, an electrode plate assembly 24, a substrate holder 30 for supporting the substrate 35, and a pumping duct 40 coupled to a vacuum pump (not shown) for providing a reduced pressure atmosphere 11 in plasma processing chamber 10. Plasma processing chamber 10 can facilitate the formation of a process plasma in process space 12 adjacent to the substrate 35. The plasma processing system 1 can be configured to process substrates of any size, such as 200mm substrates, 300mm substrates, or larger. [0018] In the illustrated embodiment, electrode plate assembly 24 comprises an electrode plate 26 and an electrode 28. In an alternate embodiment, upper assembly 20 can also comprise a cover, a gas injection assembly, and/or an upper impedance match network. The electrode plate assembly 24 can be coupled to an RF source. In another alternate embodiment, the upper assembly 20 comprises a cover coupled to the electrode plate assembly 24, wherein the electrode plate assembly 24 is maintained at an electrical potential equivalent to that of the plasma processing chamber 10. For example, the plasma processing chamber 10, the upper assembly 20, and the electrode plate assembly 24 can be electrically connected to ground potential.
[0019] Plasma processing chamber 10 can further comprise an optical viewport 16 coupled to a deposition shield. Optical viewport 16 can comprise an optical window 17 coupled to the backside of an optical window deposition shield 18, and an optical window flange 19 can be configured to couple the optical window 17 to the optical window deposition shield 18. Sealing members, such as O-rings, can be provided between the optical window flange 19 and the optical window 17, between the optical window 17 and the optical window deposition shield 18 and the plasma processing chamber 10. Optical viewport 16 can permit monitoring of optical emission from the processing plasma in process space 12.
[0020] Substrate holder 30 can further comprise a vertical translational device 50 surrounded by a bellows 52 coupled to the substrate holder 30 and the plasma processing chamber 10, and configured to seal the vertical translational device 50 from the reduced pressure atmosphere 11 in plasma processing chamber 10. Additionally, a bellows shield 54 can be coupled to the substrate holder 30 and configured to protect the bellows 52 from the processing plasma. Substrate holder 10 can further be coupled to a focus ring 60, and/or a shield ring 62. Furthermore, a baffle plate 64 can extend about a periphery of the substrate holder 30.
[0021] Substrate 35 can be transferred into and out of plasma processing chamber 10 through a slot valve (not shown) and/or a chamber feed-thru (not shown) via a robotic substrate transfer system where it is received by substrate lift pins (not shown) housed within substrate holder 30 and mechanically translated by devices housed therein. Once substrate 35 is received from substrate transfer system, it is lowered to an upper surface of substrate holder 30.
[0022] Substrate 35 can be affixed to the substrate holder 30 via an electrostatic clamping system, or a mechanical clamping system. Furthermore, substrate holder 30 can further include a cooling system including a re-cirulating coolant flow that receives heat from the substrate holder 30 and transfers heat to a heat exchanger system (not shown), or when heating, transfers heat from the heat exchanger system. Moreover, gas can be delivered to the back-side of substrate 35 via a backside gas system to improve the gas-gap thennal conductance between substrate 35 and substrate holder 30. Such a system can be utilized when temperature control of the substrate is required at elevated or reduced temperatures. In other embodiments, heating elements, such as resistive heating elements, or thermo-electric heaters/coolers can be included.
[0023] In the illustrated embodiment shown in FIG. 1, substrate holder 30 can comprise an electrode through which RF power is coupled to the processing plasma in process space 12. For example, substrate holder 30 can be electrically biased at a RF voltage via the transmission of RF power from a RF generator (not shown) through an impedance match network (not shown) to substrate holder 30. The RF bias can serve to heat electrons to form and maintain plasma. In this configuration, the system can operate as a reactive ion etch (RIE) reactor, wherein the chamber and upper gas injection electrode serve as ground surfaces. A typical frequency for the RF bias can range from approximately 1 MHz to approximately 100 MHz and can be approximately 13.56 MHz. RF systems for plasma processing are well known to those skilled in the art.
[0024] Alternately, the processing plasma in process space 12 can be formed using a parallel-plate, capacitively coupled plasma (CCP) source, or an inductively coupled plasma (ICP) source, or any combination thereof, and with or without magnet systems. Alternately, the processing plasma in process space 12 is formed from the launching of a Helicon wave. In yet another embodiment, the processing plasma in process space 12 is formed from a propagating surface wave.
[0025] Referring now to FIG. 2, a method of fabricating a baffle plate assembly, surrounding a substrate holder in a plasma processing system is described. As shown in FIG. 2, the method begins in 201 with first forming a baffle plate blank. The baffle plate blank is configured with one or more features that when modified by planar material removal form pumping passageways in the baffle plate blank, thus forming a baffle plate assembly. The baffle plate blank, including features to be modified, can be formed by metal casting, metal stamping, machining, ceramic fabrication, molding, or quartz fabrication, or any combination thereof. In 202, one or more pumping passageways are formed in the baffle plate blank by planar surface removal of the baffle plate blank. Planar material removal can be performed on at least one portion of one surface of the baffle plate blank. Planar surface removal to baffle plate blank can be performed by milling, grinding, lapping, sanding, planing and/or etching. The planar surface removal process can be a single
operation.
[0026] Referring now to an illustrated embodiment of the present invention as depicted in FIG. 3A, FIG. 3B and FIG 3C. Baffle plate blank 300 is configured to be capable of surrounding a substrate holder in a plasma processing system. The baffle plate blank 300 is made from aluminum, alumina, silicon, quartz, carbon, silica nitride, and/or ceramic. The baffle plate blank 300 is configured with one or more closed pumping features 301. FIG. 3B identifies a cross-sectional view of baffle plate blank 300 illustrating several closed pumping features 301. Baffle plate blank has an upper surface
306 and a lower surface 307. As illustrated in FIG. 3C, when lower surface
307 is modified by planar material removal to form a new lower surface 308, open pumping passages 302 are formed in the baffle plate blank 300, thus forming a baffle plate assembly 310.
[0027] Furthermore a protective barrier can be formed on any surface of the baffle plate assembly 310. The protective barrier can, for example, facilitate the provision of an erosion resistant surface when the baffle plate assembly 310 is exposed to harsh processing environments, such as plasma. The protective barrier can be formed by providing a surface anodization on one or more surfaces, providing a spray coating on one or more surfaces, and/or subjecting one or more surfaces to plasma electrolytic oxidation. The protective barrier can comprise a layer of a Ill-column element and/or a Lanthanon element. The protective barrier can comprise Al2O3, Yttria (Y2O3), Sc2O3, Sc2F3, YF3, La2O3, CeO2, Eu2O3, and/or DyO3. Methods of anodizing aluminum components and applying spray coatings are well known to those skilled in the art of surface material treatment.
[0028] All surfaces on the baffle plate assembly 310 can be provided with the protective barrier, applied using any of the techniques described above. In another example, all surfaces on the baffle plate 310, except for a selected portion of a surface or surfaces, can be provided with the protective barrier, applied using any of the techniques described above. Prior to the application of the protective barrier to the surfaces of the baffle plate assembly 310, any region can be masked in order to prevent the formation of the barrier layer thereon. Alternatively, following the application of the protective barrier to the surfaces of the baffle plate assembly 310 any region can be processed to remove the barrier layer formed thereon.
[0029] In the embodiment shown in FIG. 3A, FIG 3B, and FIG. 3C, the one or more pumping passages 302 can comprise slots aligned in a radial direction. As shown, the slots can be spaced evenly azimuthally. In an alternate embodiment of the present invention, the slots can be spaced unevenly azimuthally. In an alternate embodiment of the present invention, the slots can be slanted and, therefore aligned, evenly partially in a radial direction and an azimuthal direction. In an alternate embodiment of the present invention, the slots can be slanted and, therefore aligned, unevenly partially in a radial direction and an azimuthal direction. In an alternate embodiment of the present invention the slots can be complex geometries aligned radially, slanted, evenly spaced and/or unevenly spaced. Indeed, the slots or other openings can be of any desired configuration. For example, FIG. 4A identifies a baffle plate assembly 410 with pumping passages 420 configured in a complex slot configuration, centered with respect to the baffle plate assembly 410 and evenly spaced azimuthally.
[0030] Alternately the pumping passages can include at least one orifice. Alternately, as shown in FIG. 4B, the pumping passages 440 comprise a plurality of orifices having a constant size and uniform distribution on the baffle plate assembly 430. Alternately the pumping passages can comprise a plurality of orifices, wherein the orifice size, distribution (or number density), and/or orifice shape varies across a baffle plate assembly. For example, when a vacuum pump (not shown) accesses a processing chamber 10 through a pumping duct 40, as shown in FIG. 1, the number of pumping passages can be reduced local to the entrance to the pumping duct 40 in order to correct for the non-uniform pressure field inherent to such an arrangement.
[0031] Alternately pumping passages can include at least one slot and at least one orifice. Varieties of alternate arrangements of these pumping features can utilize any of the alternates described above or any other shape or configuration.
[0032] The orifice described above can be a round hole, a polygon, an icon, letters of any language and/or any open geometric shape. For example, FIG. 4C identifies a baffle plate assembly 450 with multiple orifices 460, comprised of English language characters.
[0033] Although only certain exemplary embodiments of this invention have been described in detail above, those skilled in the art will readily appreciate that many modifications are possible in the exemplary embodiments without materially departing from the novel teachings and advantages of this invention. Accordingly, all such modifications are intended to be included within the scope of this invention.

Claims

CLAIMS:
1. A method of fabricating a baffle plate assembly, surrounding a substrate holder in a plasma processing system comprising: forming a baffle plate blank; and forming one or more pumping passageways wherein one or more features of said baffle plate blank are modified by planar material removal forming said pumping passages.
2. A method according to claim 1 wherein said forming of said baffle plate blank includes metal casting, metal stamping, machining, ceramic fabrication, molding,or quartz fabrication, or any combination thereof.
3. A method according to claim 1, wherein said planar material removal modification to said blank baffle plate blank comprises milling, grinding, lapping, sanding, planing, or etching, or any combination thereof.
4. The method according to claim 1, wherein the planar material removal is performed in a single operation.
5. A baffle plate assembly, surrounding a substrate holder in a plasma processing system comprising: a baffle plate blank having one or more pumping passages, wherein one or more features of said baffle plate blank are modified by planar material removal to form said pumping passages
6. A baffle plate assembly according to claim 5, wherein said baffle plate blank is made from aluminum, alumina, silicon, quartz, carbon, silicon nitride, silicon carbide, or ceramic, or any combination thereof.
7. A baffle plate assembly according to claim 5, wherein a surface of said baffle plate assembly comprises a protective barrier.
8. A baffle plate assembly according to claim 5, wherein a portion of a surface of said baffle plate assembly comprises a protective barrier.
9. A baffle plate assembly according to claim 7 or 8, wherein said protective barrier comprises a surface anodization, a coating formed using plasma electrolytic oxidation, or a spray coating, or any combination thereof.
10. A baffle plate assembly according to claim 7 or 8, wherein said protective barrier comprises a layer of of one or more Ill-column elements or one or more Lanthanon elements, or any combination thereof.
11. A baffle plate assembly according to claim 10, wherein said one or more Ill-column elements comprise Yttrium, Scandium, or Lanthanum, or any combination thereof.
12. A baffle plate assembly according to claim 11, wherein said one or more Lanthanon elements comprise Cerium, Dysprosium, or Europium, or any combination thereof.
13. The baffle plate assembly according to claim 7 or 8, wherein said protective barrier comprises Al2O3, Yttria (Y2O3), Sc2O3, Sc2F3, YF3, La2O3, CeO2, Eu2O3, or DyO3, or any combination thereof.
14. A baffle plate assembly according to claim 5, wherein one or more said pumping passages comprises a slot, or an orifice, or any combination thereof.
15. An orifice according to claim 14, wherein the shape and design of said orifice is a round hole, a polygon, an icon, one or more letters of any language, or any open geometric shape.
16. A baffle plate assembly according to claim 5, wherein the size, shape or distribution of said pumping passages, or any combination thereof, varies on said baffle plate assembly.
17. A plasma process apparatus with baffle plate assembly comprising: a process chamber, a plasma generating system configured and arranged to produce a plasma in the process chamber, a gas source configured to introduce gases into the process chamber, a pressure control system to maintain a selected pressure within the process chamber, a substrate holder configured to hold a substrate during substrate processing, and a baffle plate assembly disposed radially outward from said substrate and formed from a baffle plate blank with one or more pumping passages formed by planar material removal from said baffle plate blank.
PCT/US2005/036873 2004-12-08 2005-10-13 Method and apparatus for improved baffle plate Ceased WO2006062576A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007545448A JP5361189B2 (en) 2004-12-08 2005-10-13 Method and apparatus for improved baffle plate

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/006,544 2004-12-08
US11/006,544 US7552521B2 (en) 2004-12-08 2004-12-08 Method and apparatus for improved baffle plate

Publications (2)

Publication Number Publication Date
WO2006062576A2 true WO2006062576A2 (en) 2006-06-15
WO2006062576A3 WO2006062576A3 (en) 2007-01-18

Family

ID=36572790

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/036873 Ceased WO2006062576A2 (en) 2004-12-08 2005-10-13 Method and apparatus for improved baffle plate

Country Status (5)

Country Link
US (1) US7552521B2 (en)
JP (1) JP5361189B2 (en)
KR (1) KR20070083779A (en)
TW (1) TW200633600A (en)
WO (1) WO2006062576A2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102647846A (en) * 2011-02-15 2012-08-22 东京毅力科创株式会社 Upper electrode and plasma processing apparatus

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030090305A (en) * 2002-05-22 2003-11-28 동경엘렉트론코리아(주) Exhaust baffle plate for plasma discharge device
US7552521B2 (en) * 2004-12-08 2009-06-30 Tokyo Electron Limited Method and apparatus for improved baffle plate
US7601242B2 (en) 2005-01-11 2009-10-13 Tokyo Electron Limited Plasma processing system and baffle assembly for use in plasma processing system
US8608851B2 (en) * 2005-10-14 2013-12-17 Advanced Micro-Fabrication Equipment, Inc. Asia Plasma confinement apparatus, and method for confining a plasma
JP2009200184A (en) * 2008-02-20 2009-09-03 Tokyo Electron Ltd Plasma processing apparatus, and baffle plate of plasma processing apparatus
US7987814B2 (en) * 2008-04-07 2011-08-02 Applied Materials, Inc. Lower liner with integrated flow equalizer and improved conductance
US8707971B2 (en) * 2008-05-16 2014-04-29 Xyratex Corporation Laminated walls for uniform fluid flow
JP5102706B2 (en) * 2008-06-23 2012-12-19 東京エレクトロン株式会社 Baffle plate and substrate processing apparatus
US9222172B2 (en) * 2008-08-20 2015-12-29 Applied Materials, Inc. Surface treated aluminum nitride baffle
EP2159304A1 (en) * 2008-08-27 2010-03-03 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO Apparatus and method for atomic layer deposition
JP5350043B2 (en) * 2009-03-31 2013-11-27 東京エレクトロン株式会社 Plasma processing apparatus and plasma processing method
US8617347B2 (en) * 2009-08-06 2013-12-31 Applied Materials, Inc. Vacuum processing chambers incorporating a moveable flow equalizer
EP2360293A1 (en) 2010-02-11 2011-08-24 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Method and apparatus for depositing atomic layers on a substrate
EP2362411A1 (en) 2010-02-26 2011-08-31 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Apparatus and method for reactive ion etching
US20110226739A1 (en) * 2010-03-19 2011-09-22 Varian Semiconductor Equipment Associates, Inc. Process chamber liner with apertures for particle containment
KR101185309B1 (en) * 2010-04-16 2012-09-21 윤종문 An ornament with a seal and the manufacturing methord thereof
US9443753B2 (en) 2010-07-30 2016-09-13 Applied Materials, Inc. Apparatus for controlling the flow of a gas in a process chamber
US8869742B2 (en) * 2010-08-04 2014-10-28 Lam Research Corporation Plasma processing chamber with dual axial gas injection and exhaust
US9184028B2 (en) 2010-08-04 2015-11-10 Lam Research Corporation Dual plasma volume processing apparatus for neutral/ion flux control
US9129778B2 (en) 2011-03-18 2015-09-08 Lam Research Corporation Fluid distribution members and/or assemblies
US9790934B2 (en) 2011-07-07 2017-10-17 Performance Pulsation Control, Inc. Pump pulsation discharge dampener with curved internal baffle and pressure drop feature creating two internal volumes
KR101505536B1 (en) * 2012-05-14 2015-03-25 피에스케이 주식회사 A baffle and an apparatus for treating a substrate with the baffle
KR101408790B1 (en) * 2012-07-31 2014-06-19 세메스 주식회사 Apparatus for treating substrate
CN103578906B (en) 2012-07-31 2016-04-27 细美事有限公司 For the treatment of the device of substrate
KR101451244B1 (en) * 2013-03-22 2014-10-15 참엔지니어링(주) Liner assembly and substrate processing apparatus having the same
JP6544902B2 (en) * 2014-09-18 2019-07-17 東京エレクトロン株式会社 Plasma processing system
JP6404111B2 (en) * 2014-12-18 2018-10-10 東京エレクトロン株式会社 Plasma processing equipment
JP6570993B2 (en) * 2015-12-16 2019-09-04 東京エレクトロン株式会社 Plasma processing equipment
US11572617B2 (en) 2016-05-03 2023-02-07 Applied Materials, Inc. Protective metal oxy-fluoride coatings
US20180327892A1 (en) 2017-05-10 2018-11-15 Applied Materials, Inc. Metal oxy-flouride films for chamber components
US20190119815A1 (en) * 2017-10-24 2019-04-25 Applied Materials, Inc. Systems and processes for plasma filtering
KR102600470B1 (en) 2018-05-02 2023-11-13 삼성디스플레이 주식회사 Apparatus and method for manufacturing a display apparatus
CN208835019U (en) * 2018-11-12 2019-05-07 江苏鲁汶仪器有限公司 A reaction chamber lining
US12359313B2 (en) * 2019-07-31 2025-07-15 Taiwan Semiconductor Manufacturing Company, Ltd. Deposition apparatus and method of forming metal oxide layer using the same
JP7365892B2 (en) * 2019-12-19 2023-10-20 東京エレクトロン株式会社 Baffle members and substrate processing equipment
US11380524B2 (en) 2020-03-19 2022-07-05 Applied Materials, Inc. Low resistance confinement liner for use in plasma chamber
USD943539S1 (en) 2020-03-19 2022-02-15 Applied Materials, Inc. Confinement plate for a substrate processing chamber
USD979524S1 (en) 2020-03-19 2023-02-28 Applied Materials, Inc. Confinement liner for a substrate processing chamber
US12080571B2 (en) * 2020-07-08 2024-09-03 Applied Materials, Inc. Substrate processing module and method of moving a workpiece
CN112233962B (en) * 2020-09-17 2023-08-18 北京北方华创微电子装备有限公司 Collecting assembly sleeved on base and semiconductor chamber
CN114334593B (en) * 2020-09-29 2023-10-31 中微半导体设备(上海)股份有限公司 Confinement ring, plasma processing device and exhaust method thereof
KR102883703B1 (en) * 2020-11-05 2025-11-10 삼성전자주식회사 Method of processing substrate and apparatus thereof
US12473659B2 (en) * 2021-06-17 2025-11-18 Applied Materials, Inc. Conformal yttrium oxide coating

Family Cites Families (275)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4310390A (en) * 1977-08-10 1982-01-12 Lockheed Corporation Protective coating process for aluminum and aluminum alloys
US4209357A (en) 1979-05-18 1980-06-24 Tegal Corporation Plasma reactor apparatus
US4263088A (en) * 1979-06-25 1981-04-21 Motorola, Inc. Method for process control of a plasma reaction
JPS5623745A (en) 1979-08-01 1981-03-06 Hitachi Ltd Plasma etching device
US4270999A (en) 1979-09-28 1981-06-02 International Business Machines Corporation Method and apparatus for gas feed control in a dry etching process
US4297162A (en) 1979-10-17 1981-10-27 Texas Instruments Incorporated Plasma etching using improved electrode
JPS63450Y2 (en) 1980-03-26 1988-01-07
US4367114A (en) * 1981-05-06 1983-01-04 The Perkin-Elmer Corporation High speed plasma etching system
US4357387A (en) 1981-08-20 1982-11-02 Subtex, Inc. Flame resistant insulating fabric compositions prepared by plasma spraying
JPS5857491A (en) 1981-09-30 1983-04-05 Sony Corp Method for manufacturing green phosphor
JPS59159510A (en) 1983-03-01 1984-09-10 Canon Inc magneto-optical recording medium
JPS59186325U (en) 1983-05-30 1984-12-11 松下電工株式会社 daylight window
US4579618A (en) * 1984-01-06 1986-04-01 Tegal Corporation Plasma reactor apparatus
US4534816A (en) 1984-06-22 1985-08-13 International Business Machines Corporation Single wafer plasma etch reactor
JPH065155B2 (en) * 1984-10-12 1994-01-19 住友金属工業株式会社 Furnace wall repair device for kiln
US4593007A (en) 1984-12-06 1986-06-03 The Perkin-Elmer Corporation Aluminum and silica clad refractory oxide thermal spray powder
US4590042A (en) * 1984-12-24 1986-05-20 Tegal Corporation Plasma reactor having slotted manifold
JPS61207566A (en) 1985-03-12 1986-09-13 Showa Denko Kk Ceramic thermal spray coating formation method
US4612077A (en) 1985-07-29 1986-09-16 The Perkin-Elmer Corporation Electrode for plasma etching system
JPS6267161U (en) 1985-10-15 1987-04-25
JPH0611346Y2 (en) 1986-06-30 1994-03-23 不二サッシ株式会社 Opening / closing device for sliding doors inside / outside windows
US4985102A (en) * 1986-07-17 1991-01-15 Du Pont Canada Inc. Method of making fiber reinforced polyamide sheets
US5000113A (en) * 1986-12-19 1991-03-19 Applied Materials, Inc. Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
US4842683A (en) 1986-12-19 1989-06-27 Applied Materials, Inc. Magnetic field-enhanced plasma etch reactor
US4780169A (en) 1987-05-11 1988-10-25 Tegal Corporation Non-uniform gas inlet for dry etching apparatus
US4877757A (en) 1987-07-16 1989-10-31 Texas Instruments Incorporated Method of sequential cleaning and passivating a GaAs substrate using remote oxygen plasma
US4854263B1 (en) 1987-08-14 1997-06-17 Applied Materials Inc Inlet manifold and methods for increasing gas dissociation and for PECVD of dielectric films
JPH0423551Y2 (en) 1987-09-04 1992-06-02
JPH0741153Y2 (en) * 1987-10-26 1995-09-20 東京応化工業株式会社 Sample processing electrode
JPH01120328A (en) 1987-11-04 1989-05-12 Koichi Sato Pressure molding machine
US4792378A (en) 1987-12-15 1988-12-20 Texas Instruments Incorporated Gas dispersion disk for use in plasma enhanced chemical vapor deposition reactor
US4820371A (en) * 1987-12-15 1989-04-11 Texas Instruments Incorporated Apertured ring for exhausting plasma reactor gases
NO163412B (en) 1988-01-25 1990-02-12 Elkem Technology The plasma torch.
JPH0730468B2 (en) 1988-06-09 1995-04-05 日電アネルバ株式会社 Dry etching equipment
JPH0657396B2 (en) 1989-02-17 1994-08-03 レンゴー株式会社 Rotary shear control method and device
JPH02267967A (en) 1989-04-07 1990-11-01 Fuji Electric Co Ltd Manufacture of semiconductor element
US5429070A (en) 1989-06-13 1995-07-04 Plasma & Materials Technologies, Inc. High density plasma deposition and etching apparatus
US5134965A (en) 1989-06-16 1992-08-04 Hitachi, Ltd. Processing apparatus and method for plasma processing
EP0407945B1 (en) 1989-07-11 1995-01-04 Sony Corporation Method of heat-treating an oxide optical crystal and a heat treatment apparatus for carrying out the same
JPH0758013B2 (en) 1989-07-19 1995-06-21 日立造船株式会社 Chimney dismantling device
US5334462A (en) 1989-09-08 1994-08-02 United Technologies Corporation Ceramic material and insulating coating made thereof
JPH03115535A (en) 1989-09-28 1991-05-16 Nippon Mining Co Ltd Method for decreasing oxygen in rare earth metal
US5556501A (en) 1989-10-03 1996-09-17 Applied Materials, Inc. Silicon scavenger in an inductively coupled RF plasma reactor
US5126102A (en) 1990-03-15 1992-06-30 Kabushiki Kaisha Toshiba Fabricating method of composite material
GB2242443B (en) * 1990-03-28 1994-04-06 Nisshin Flour Milling Co Coated particles of inorganic or metallic materials and processes of producing the same
US5180467A (en) * 1990-08-08 1993-01-19 Vlsi Technology, Inc. Etching system having simplified diffuser element removal
US5074456A (en) 1990-09-18 1991-12-24 Lam Research Corporation Composite electrode for plasma processes
JPH04238882A (en) 1991-01-10 1992-08-26 Denki Kagaku Kogyo Kk High-temperature insulated article
DE4103994A1 (en) 1991-02-11 1992-08-13 Inst Elektroswarki Patona PROTECTIVE COVER OF THE METAL-CERAMIC TYPE FOR ITEMS OF HEAT-RESISTANT ALLOYS
EP0508731B1 (en) 1991-04-09 1996-09-18 The Tokyo Electric Power Co., Inc. Use of an oxide coating to enhance the resistance to oxidation and corrosion of a silicon nitride based gas turbine blade
JPH05117064A (en) 1991-04-09 1993-05-14 Tokyo Electric Power Co Inc:The Blade for gas turbine and its production
JPH05121360A (en) 1991-04-22 1993-05-18 Tokyo Electron Yamanashi Kk Semiconductor processor
JPH05198532A (en) 1992-01-22 1993-08-06 Hitachi Chem Co Ltd Electrode plate for plasma etching device
JPH05238859A (en) 1992-02-28 1993-09-17 Tokyo Electric Power Co Inc:The Coated member of ceramic
JPH05238855A (en) 1992-02-28 1993-09-17 Tokyo Electric Power Co Inc:The Production of ceramic coating member
CA2097222A1 (en) 1992-06-01 1993-12-02 Somyong Visaisouk Particle blasting utilizing crystalline ice
JPH06224137A (en) 1992-06-05 1994-08-12 Applied Materials Inc Integrated circuit structure processor having chemical corrosion resistant aluminum oxide protective film on surface of its quartz window which is in contact with corrosive chemical substance
KR100276093B1 (en) * 1992-10-19 2000-12-15 히가시 데쓰로 Plasma etching system
JPH06136505A (en) 1992-10-26 1994-05-17 Sumitomo Metal Ind Ltd Sprayed coating structure
JPH06142822A (en) 1992-11-09 1994-05-24 Kawasaki Steel Corp Method for manufacturing high melting point active metal casting mold
JPH06196548A (en) 1992-12-24 1994-07-15 Sumitomo Metal Ind Ltd Electrostatic chuck
WO1994014878A1 (en) * 1992-12-28 1994-07-07 Nippon Zeon Co., Ltd. Molding with hard-coating layer and process for producing the same
US5366585A (en) 1993-01-28 1994-11-22 Applied Materials, Inc. Method and apparatus for protection of conductive surfaces in a plasma processing reactor
JPH06256926A (en) 1993-03-08 1994-09-13 Mitsubishi Heavy Ind Ltd Coating film for heat shielding
US5362335A (en) 1993-03-25 1994-11-08 General Motors Corporation Rare earth coating process for aluminum alloys
KR100324792B1 (en) 1993-03-31 2002-06-20 히가시 데쓰로 Plasma processing apparatus
JP3236398B2 (en) 1993-04-02 2001-12-10 株式会社フジクラ Thermal spray equipment
US5800686A (en) * 1993-04-05 1998-09-01 Applied Materials, Inc. Chemical vapor deposition chamber with substrate edge protection
US5891253A (en) * 1993-05-14 1999-04-06 Applied Materials, Inc. Corrosion resistant apparatus
US5551190A (en) 1993-05-19 1996-09-03 Ohi Seisakusho Co., Ltd. Slide door driving system
US5614055A (en) * 1993-08-27 1997-03-25 Applied Materials, Inc. High density plasma CVD and etching reactor
US5529657A (en) 1993-10-04 1996-06-25 Tokyo Electron Limited Plasma processing apparatus
JPH07126827A (en) 1993-10-28 1995-05-16 Nippon Alum Co Ltd Composite film of metallic surface and its formation
JP3228644B2 (en) 1993-11-05 2001-11-12 東京エレクトロン株式会社 Material for vacuum processing apparatus and method for producing the same
US5484752A (en) * 1993-11-12 1996-01-16 Ube Industries, Ltd. Ceramic composite material
US5472565A (en) 1993-11-17 1995-12-05 Lam Research Corporation Topology induced plasma enhancement for etched uniformity improvement
JP3308091B2 (en) * 1994-02-03 2002-07-29 東京エレクトロン株式会社 Surface treatment method and plasma treatment device
JPH07226378A (en) 1994-02-10 1995-08-22 Sony Corp Film forming method and plasma device used therefor
JP3061346B2 (en) 1994-03-07 2000-07-10 東京エレクトロン株式会社 Processing equipment
US5798016A (en) 1994-03-08 1998-08-25 International Business Machines Corporation Apparatus for hot wall reactive ion etching using a dielectric or metallic liner with temperature control to achieve process stability
US5680013A (en) 1994-03-15 1997-10-21 Applied Materials, Inc. Ceramic protection for heated metal surfaces of plasma processing chamber exposed to chemically aggressive gaseous environment therein and method of protecting such heated metal surfaces
US5900103A (en) 1994-04-20 1999-05-04 Tokyo Electron Limited Plasma treatment method and apparatus
US5651723A (en) 1994-04-13 1997-07-29 Viratec Thin Films, Inc. Method and apparatus for cleaning substrates in preparation for deposition of thin film coatings
US5521790A (en) * 1994-05-12 1996-05-28 International Business Machines Corporation Electrostatic chuck having relatively thick and thin areas and means for uniformly cooling said thick and thin areas during chuck anodization
EP0760526A4 (en) * 1994-05-17 2001-01-10 Hitachi Ltd PLASMA TREATMENT DEVICE AND METHOD
US5411568A (en) * 1994-05-25 1995-05-02 Harmony Products Inc. Highly available waste based nitrogen fertilizer
JPH0841309A (en) 1994-07-28 1996-02-13 Hoechst Japan Ltd Polybenzimidazole-based resin articles for dry etching equipment
US5641375A (en) 1994-08-15 1997-06-24 Applied Materials, Inc. Plasma etching reactor with surface protection means against erosion of walls
DE9421671U1 (en) 1994-08-26 1996-07-11 Siemens AG, 80333 München Discharge chamber for a plasma etching system in semiconductor production
JP3473121B2 (en) 1994-09-14 2003-12-02 ソニー株式会社 Plasma CVD apparatus and plasma CVD method
US5746875A (en) * 1994-09-16 1998-05-05 Applied Materials, Inc. Gas injection slit nozzle for a plasma process reactor
US5885356A (en) * 1994-11-30 1999-03-23 Applied Materials, Inc. Method of reducing residue accumulation in CVD chamber using ceramic lining
US5891350A (en) * 1994-12-15 1999-04-06 Applied Materials, Inc. Adjusting DC bias voltage in plasma chambers
DE69603627T2 (en) * 1995-01-19 1999-12-30 Ube Industries, Ltd. Ceramic composite body
JP3778299B2 (en) * 1995-02-07 2006-05-24 東京エレクトロン株式会社 Plasma etching method
US5759360A (en) 1995-03-13 1998-06-02 Applied Materials, Inc. Wafer clean sputtering process
JP3420377B2 (en) 1995-03-29 2003-06-23 京セラ株式会社 Method for producing yttrium-aluminum-garnet sintered body
US6296740B1 (en) 1995-04-24 2001-10-02 Si Diamond Technology, Inc. Pretreatment process for a surface texturing process
US5534356A (en) 1995-04-26 1996-07-09 Olin Corporation Anodized aluminum substrate having increased breakdown voltage
US5569356A (en) 1995-05-19 1996-10-29 Lam Research Corporation Electrode clamping assembly and method for assembly and use thereof
JP3208044B2 (en) * 1995-06-07 2001-09-10 東京エレクトロン株式会社 Plasma processing apparatus and plasma processing method
JPH08339895A (en) 1995-06-12 1996-12-24 Tokyo Electron Ltd Plasma processing device
TW323387B (en) 1995-06-07 1997-12-21 Tokyo Electron Co Ltd
US5716485A (en) * 1995-06-07 1998-02-10 Varian Associates, Inc. Electrode designs for controlling uniformity profiles in plasma processing reactors
JP3164200B2 (en) 1995-06-15 2001-05-08 住友金属工業株式会社 Microwave plasma processing equipment
US5534751A (en) 1995-07-10 1996-07-09 Lam Research Corporation Plasma etching apparatus utilizing plasma confinement
DE19529627C1 (en) 1995-08-11 1997-01-16 Siemens Ag Thermally conductive, electrically insulating connection and method for its production
JP2971369B2 (en) 1995-08-31 1999-11-02 トーカロ株式会社 Electrostatic chuck member and method of manufacturing the same
EP0777258A3 (en) * 1995-11-29 1997-09-17 Applied Materials Inc Self-cleaning plasma reactor
US5894887A (en) * 1995-11-30 1999-04-20 Applied Materials, Inc. Ceramic dome temperature control using heat pipe structure and method
US6373573B1 (en) * 2000-03-13 2002-04-16 Lj Laboratories L.L.C. Apparatus for measuring optical characteristics of a substrate and pigments applied thereto
US5985102A (en) 1996-01-29 1999-11-16 Micron Technology, Inc. Kit for electrically isolating collimator of PVD chamber, chamber so modified, and method of using
JP4226669B2 (en) 1996-02-05 2009-02-18 株式会社東芝 Heat resistant material
US5955182A (en) 1996-02-05 1999-09-21 Kabushiki Kaisha Toshiba Heat resisting member and its production method
JP3035209B2 (en) 1996-02-27 2000-04-24 三菱重工業株式会社 Corrosion resistant material and method for producing the same
JPH09235662A (en) 1996-02-28 1997-09-09 Nittetsu Hard Kk Formation of thermally sprayed coating
UA17473A (en) 1996-04-04 1997-05-06 Міжнародний Центр Електронно-Променевих Технологій Інституту Електрозварювання Ім. Є.О. Патона Нан України METHOD FOR OBTAINING A PROTECTIVE COATING ON A SUBSTRATE WITH A GRADIENT OF CHEMICAL COMPOSITION AND STRUCTURE OVER THE THICKNESS WITH AN EXTERNAL CERAMIC LAYER
JP3360265B2 (en) * 1996-04-26 2002-12-24 東京エレクトロン株式会社 Plasma processing method and plasma processing apparatus
US6108189A (en) 1996-04-26 2000-08-22 Applied Materials, Inc. Electrostatic chuck having improved gas conduits
US5892278A (en) * 1996-05-24 1999-04-06 Dai Nippon Printingco., Ltd. Aluminum and aluminum alloy radiator for semiconductor device and process for producing the same
CA2205817C (en) 1996-05-24 2004-04-06 Sekisui Chemical Co., Ltd. Treatment method in glow-discharge plasma and apparatus thereof
JP3050124B2 (en) 1996-05-27 2000-06-12 住友金属工業株式会社 Plasma processing equipment
US5820723A (en) 1996-06-05 1998-10-13 Lam Research Corporation Universal vacuum chamber including equipment modules such as a plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support
US5952060A (en) 1996-06-14 1999-09-14 Applied Materials, Inc. Use of carbon-based films in extending the lifetime of substrate processing system components
JPH104083A (en) 1996-06-17 1998-01-06 Kyocera Corp Corrosion resistant materials for semiconductor manufacturing
JP3241270B2 (en) 1996-06-25 2001-12-25 日本政策投資銀行 Thermoelectric converter
US5993916A (en) 1996-07-12 1999-11-30 Applied Materials, Inc. Method for substrate processing with improved throughput and yield
US5885402A (en) * 1996-07-17 1999-03-23 Applied Materials Diagnostic head assembly for plasma chamber
EP0821395A3 (en) 1996-07-19 1998-03-25 Tokyo Electron Limited Plasma processing apparatus
US5904778A (en) * 1996-07-26 1999-05-18 Applied Materials, Inc. Silicon carbide composite article particularly useful for plasma reactors
JP3619330B2 (en) 1996-07-31 2005-02-09 京セラ株式会社 Components for plasma process equipment
JP3261044B2 (en) 1996-07-31 2002-02-25 京セラ株式会社 Components for plasma processing equipment
US5882411A (en) * 1996-10-21 1999-03-16 Applied Materials, Inc. Faceplate thermal choke in a CVD plasma reactor
JPH10130884A (en) 1996-10-25 1998-05-19 Nagayama Kogyosho:Kk Treatment of heat resistant anodically oxidized coating
US6120640A (en) 1996-12-19 2000-09-19 Applied Materials, Inc. Boron carbide parts and coatings in a plasma reactor
US6301004B1 (en) 2000-05-31 2001-10-09 Lj Laboratories, L.L.C. Apparatus and method for measuring optical characteristics of an object
US5925228A (en) 1997-01-09 1999-07-20 Sandia Corporation Electrophoretically active sol-gel processes to backfill, seal, and/or densify porous, flawed, and/or cracked coatings on electrically conductive material
JPH10214819A (en) 1997-01-28 1998-08-11 Sumitomo Metal Ind Ltd Electrode plate for plasma etching
US5800621A (en) 1997-02-10 1998-09-01 Applied Materials, Inc. Plasma source for HDP-CVD chamber
JPH10226869A (en) 1997-02-17 1998-08-25 Mitsui Eng & Shipbuild Co Ltd Plasma spraying method
US5843239A (en) * 1997-03-03 1998-12-01 Applied Materials, Inc. Two-step process for cleaning a substrate processing chamber
JPH111757A (en) 1997-04-14 1999-01-06 Toshiba Ceramics Co Ltd Jig for burning in nonoxidizing atmosphere
US5900064A (en) * 1997-05-01 1999-05-04 Applied Materials, Inc. Plasma process chamber
US5851343A (en) 1997-05-16 1998-12-22 Taiwan Semiconductor Manufacturing Company, Ltd. Protective shield around the inner edge of endpoint window in a plasma etching chamber
US5994662A (en) 1997-05-29 1999-11-30 Applied Materials, Inc. Unique baffle to deflect remote plasma clean gases
US6143646A (en) 1997-06-03 2000-11-07 Motorola Inc. Dual in-laid integrated circuit structure with selectively positioned low-K dielectric isolation and method of formation
JP3707229B2 (en) 1997-06-27 2005-10-19 コニカミノルタビジネステクノロジーズ株式会社 Electrophotographic photosensitive member and electrophotographic image forming apparatus using the same
JP3362113B2 (en) 1997-07-15 2003-01-07 日本碍子株式会社 Corrosion-resistant member, wafer mounting member, and method of manufacturing corrosion-resistant member
JPH1136076A (en) * 1997-07-16 1999-02-09 Tokyo Electron Ltd CVD film forming apparatus and CVD film forming method
US6161500A (en) * 1997-09-30 2000-12-19 Tokyo Electron Limited Apparatus and method for preventing the premature mixture of reactant gases in CVD and PECVD reactions
US6106625A (en) 1997-12-02 2000-08-22 Applied Materials, Inc. Reactor useful for chemical vapor deposition of titanium nitride
US6063441A (en) * 1997-12-02 2000-05-16 Applied Materials, Inc. Processing chamber and method for confining plasma
US6079356A (en) 1997-12-02 2000-06-27 Applied Materials, Inc. Reactor optimized for chemical vapor deposition of titanium
US20020011215A1 (en) * 1997-12-12 2002-01-31 Goushu Tei Plasma treatment apparatus and method of manufacturing optical parts using the same
KR100258984B1 (en) 1997-12-24 2000-08-01 윤종용 Dry etching apparatus
JPH11207161A (en) 1998-01-22 1999-08-03 Konica Corp Solid processing agent dissolution equipment
JP3350433B2 (en) 1998-02-16 2002-11-25 シャープ株式会社 Plasma processing equipment
JP4217299B2 (en) * 1998-03-06 2009-01-28 東京エレクトロン株式会社 Processing equipment
US6464843B1 (en) 1998-03-31 2002-10-15 Lam Research Corporation Contamination controlling method and apparatus for a plasma processing chamber
ATE345577T1 (en) 1998-03-31 2006-12-15 Lam Res Corp PLASMA PROCESSING CHAMBER AND METHOD FOR CONTROLLING IMPURITIES
US6129808A (en) 1998-03-31 2000-10-10 Lam Research Corporation Low contamination high density plasma etch chambers and methods for making the same
KR100265288B1 (en) * 1998-04-22 2000-10-02 윤종용 Baffle of etching equipment for fabricating semiconductor device
JP3555442B2 (en) 1998-04-24 2004-08-18 住友金属工業株式会社 Alumina ceramic material excellent in plasma corrosion resistance and method for producing the same
JP4037956B2 (en) 1998-04-28 2008-01-23 東海カーボン株式会社 Chamber inner wall protection member
JP3810039B2 (en) 1998-05-06 2006-08-16 キヤノン株式会社 Stage equipment
EP1083219B1 (en) 1998-05-26 2006-08-30 Tokyo Electron Limited Cleaning fluid and cleaning method for component of semiconductor-treating apparatus
US6246479B1 (en) 1998-06-08 2001-06-12 Lj Laboratories, L.L.C. Integrated spectrometer assembly and methods
US6182603B1 (en) * 1998-07-13 2001-02-06 Applied Komatsu Technology, Inc. Surface-treated shower head for use in a substrate processing chamber
US6335293B1 (en) * 1998-07-13 2002-01-01 Mattson Technology, Inc. Systems and methods for two-sided etch of a semiconductor substrate
US6123791A (en) 1998-07-29 2000-09-26 Applied Materials, Inc. Ceramic composition for an apparatus and method for processing a substrate
US6389506B1 (en) 1998-08-07 2002-05-14 Cisco Technology, Inc. Block mask ternary cam
JP4162773B2 (en) 1998-08-31 2008-10-08 東京エレクトロン株式会社 Plasma processing apparatus and detection window
KR100292410B1 (en) * 1998-09-23 2001-06-01 윤종용 Process chamber for reducing particulate contamination for manufacturing semiconductor device
US6170429B1 (en) * 1998-09-30 2001-01-09 Lam Research Corporation Chamber liner for semiconductor process chambers
JP3030287B1 (en) 1998-10-09 2000-04-10 株式会社協同インターナショナル Method for cleaning film forming apparatus, method for cleaning sputtering target, and cleaning apparatus used for these
JP2000124197A (en) 1998-10-16 2000-04-28 Hitachi Ltd Plasma processing equipment
US6383964B1 (en) * 1998-11-27 2002-05-07 Kyocera Corporation Ceramic member resistant to halogen-plasma corrosion
US6178919B1 (en) * 1998-12-28 2001-01-30 Lam Research Corporation Perforated plasma confinement ring in plasma reactors
US6123804A (en) 1999-02-22 2000-09-26 Applied Materials, Inc. Sectional clamp ring
US6221202B1 (en) * 1999-04-01 2001-04-24 International Business Machines Corporation Efficient plasma containment structure
JP3911902B2 (en) * 1999-04-16 2007-05-09 東京エレクトロン株式会社 Processing apparatus and surface treatment method for metal parts
US6444083B1 (en) 1999-06-30 2002-09-03 Lam Research Corporation Corrosion resistant component of semiconductor processing equipment and method of manufacturing thereof
US6245192B1 (en) 1999-06-30 2001-06-12 Lam Research Corporation Gas distribution apparatus for semiconductor processing
US6415736B1 (en) 1999-06-30 2002-07-09 Lam Research Corporation Gas distribution apparatus for semiconductor processing
JP2001023959A (en) 1999-07-05 2001-01-26 Mitsubishi Electric Corp Plasma processing equipment
JP2001031484A (en) 1999-07-22 2001-02-06 Nihon Ceratec Co Ltd Corrosion-resistant composite member
US6387817B1 (en) 1999-09-07 2002-05-14 Agere Systems Guardian Corp. Plasma confinement shield
JP4285853B2 (en) * 1999-09-08 2009-06-24 東京エレクトロン株式会社 Processing method
US6296716B1 (en) 1999-10-01 2001-10-02 Saint-Gobain Ceramics And Plastics, Inc. Process for cleaning ceramic articles
US6364949B1 (en) * 1999-10-19 2002-04-02 Applied Materials, Inc. 300 mm CVD chamber design for metal-organic thin film deposition
US6265757B1 (en) 1999-11-09 2001-07-24 Agere Systems Guardian Corp. Forming attached features on a semiconductor substrate
JP2001152307A (en) 1999-11-29 2001-06-05 Nippon Steel Hardfacing Co Ltd Method of forming corrosion resisting combined coating standing long use, and member having the composite coating
KR20010062209A (en) 1999-12-10 2001-07-07 히가시 데쓰로 Processing apparatus with a chamber having therein a high-etching resistant sprayed film
JP3510993B2 (en) 1999-12-10 2004-03-29 トーカロ株式会社 Plasma processing container inner member and method for manufacturing the same
US6673198B1 (en) * 1999-12-22 2004-01-06 Lam Research Corporation Semiconductor processing equipment having improved process drift control
US6362888B1 (en) 1999-12-23 2002-03-26 Lj Laboratories, L.L.C. Spectrometer assembly
US6519037B2 (en) * 1999-12-23 2003-02-11 Lj Laboratories, Llc Spectrometer having optical unit including a randomized fiber optic implement
JP4592856B2 (en) * 1999-12-24 2010-12-08 東京エレクトロン株式会社 Baffle plate and gas treatment device
JP3567855B2 (en) * 2000-01-20 2004-09-22 住友電気工業株式会社 Wafer holder for semiconductor manufacturing equipment
JP4272786B2 (en) 2000-01-21 2009-06-03 トーカロ株式会社 Electrostatic chuck member and manufacturing method thereof
DE10112889A1 (en) 2000-03-15 2001-10-18 Preising Paul Eric Cleaning device for cleaning of surface of high voltage-carrying plant parts, has internal compressed gas generator, dry ice reservoir with dry ice particles and/or particle generator which generates dry ice particles
TW503449B (en) 2000-04-18 2002-09-21 Ngk Insulators Ltd Halogen gas plasma-resistive members and method for producing the same, laminates, and corrosion-resistant members
US6537419B1 (en) * 2000-04-26 2003-03-25 David W. Kinnard Gas distribution plate assembly for providing laminar gas flow across the surface of a substrate
JP4422295B2 (en) 2000-05-17 2010-02-24 キヤノンアネルバ株式会社 CVD equipment
EP1167565B1 (en) * 2000-06-29 2007-03-07 Shin-Etsu Chemical Co., Ltd. Method for thermal spray coating and rare earth oxide powder used therefor
AU2001288232A1 (en) 2000-08-10 2002-02-25 Tokyo Electron Limited Method and apparatus for tuning a plasma reactor chamber
TW506234B (en) 2000-09-18 2002-10-11 Tokyo Electron Ltd Tunable focus ring for plasma processing
TWI290589B (en) 2000-10-02 2007-12-01 Tokyo Electron Ltd Vacuum processing device
US6413578B1 (en) 2000-10-12 2002-07-02 General Electric Company Method for repairing a thermal barrier coating and repaired coating formed thereby
JP2002151473A (en) 2000-11-13 2002-05-24 Tokyo Electron Ltd Plasma processing apparatus and method of assembling the same
GB2369206B (en) 2000-11-18 2004-11-03 Ibm Method for rebuilding meta-data in a data storage system and a data storage system
US20020090464A1 (en) 2000-11-28 2002-07-11 Mingwei Jiang Sputter chamber shield
JP4440541B2 (en) 2000-12-12 2010-03-24 東京エレクトロン株式会社 Method for regenerating plasma processing apparatus, plasma processing apparatus, and method for regenerating member inside plasma processing container
US20040081746A1 (en) * 2000-12-12 2004-04-29 Kosuke Imafuku Method for regenerating container for plasma treatment, member inside container for plasma treatment, method for preparing member inside container for plasma treatment, and apparatus for plasma treatment
US6630201B2 (en) 2001-04-05 2003-10-07 Angstron Systems, Inc. Adsorption process for atomic layer deposition
US6790242B2 (en) * 2000-12-29 2004-09-14 Lam Research Corporation Fullerene coated component of semiconductor processing equipment and method of manufacturing thereof
US6613442B2 (en) 2000-12-29 2003-09-02 Lam Research Corporation Boron nitride/yttria composite components of semiconductor processing equipment and method of manufacturing thereof
US6805952B2 (en) 2000-12-29 2004-10-19 Lam Research Corporation Low contamination plasma chamber components and methods for making the same
US6533910B2 (en) * 2000-12-29 2003-03-18 Lam Research Corporation Carbonitride coated component of semiconductor processing equipment and method of manufacturing thereof
US7128804B2 (en) 2000-12-29 2006-10-31 Lam Research Corporation Corrosion resistant component of semiconductor processing equipment and method of manufacture thereof
US6537429B2 (en) * 2000-12-29 2003-03-25 Lam Research Corporation Diamond coatings on reactor wall and method of manufacturing thereof
US6627901B2 (en) 2001-01-04 2003-09-30 Nec Electronics, Inc. Apparatus and method for distribution of dopant gases or vapors in an arc chamber for use in an ionization source
ATE404982T1 (en) * 2001-02-07 2008-08-15 Hitachi Metals Ltd METHOD FOR PRODUCING A METAL ALLOY FOR AN IRON-BASED RARE EARTH MAGNET
JP4676074B2 (en) * 2001-02-15 2011-04-27 東京エレクトロン株式会社 Focus ring and plasma processing apparatus
JP2002252209A (en) 2001-02-22 2002-09-06 Tokyo Electron Ltd Plasma etching equipment
US6830622B2 (en) 2001-03-30 2004-12-14 Lam Research Corporation Cerium oxide containing ceramic components and coatings in semiconductor processing equipment and methods of manufacture thereof
US6761796B2 (en) 2001-04-06 2004-07-13 Axcelis Technologies, Inc. Method and apparatus for micro-jet enabled, low-energy ion generation transport in plasma processing
TW541586B (en) 2001-05-25 2003-07-11 Tokyo Electron Ltd Substrate table, production method therefor and plasma treating device
KR20020095324A (en) * 2001-06-14 2002-12-26 삼성전자 주식회사 semiconductor device fabricating equipment using radio frequency energy
US6811651B2 (en) 2001-06-22 2004-11-02 Tokyo Electron Limited Gas temperature control for a plasma process
US6527911B1 (en) * 2001-06-29 2003-03-04 Lam Research Corporation Configurable plasma volume etch chamber
US20030013479A1 (en) * 2001-07-13 2003-01-16 Dan Vassilovski Mobile communication device preferential system selection
KR100431660B1 (en) * 2001-07-24 2004-05-17 삼성전자주식회사 Dry Etching Apparatus for Manufacturing Semiconductor Devices
US20030029563A1 (en) * 2001-08-10 2003-02-13 Applied Materials, Inc. Corrosion resistant coating for semiconductor processing chamber
US6849306B2 (en) 2001-08-23 2005-02-01 Konica Corporation Plasma treatment method at atmospheric pressure
US7390366B2 (en) 2001-11-05 2008-06-24 Jusung Engineering Co., Ltd. Apparatus for chemical vapor deposition
US20030092278A1 (en) 2001-11-13 2003-05-15 Fink Steven T. Plasma baffle assembly
JP3850277B2 (en) 2001-12-03 2006-11-29 東芝セラミックス株式会社 Method for manufacturing plasma resistant member
KR100440500B1 (en) 2001-12-07 2004-07-15 주식회사 코미코 Ceramic parts production and repair for semiconductor fabrication by plasma spray process
GB2383833A (en) 2001-12-27 2003-07-09 Perkins Engines Co Ltd Piston with a ceramic reinforced ring groove
US6776873B1 (en) 2002-02-14 2004-08-17 Jennifer Y Sun Yttrium oxide based surface coating for semiconductor IC processing vacuum chambers
US6646233B2 (en) 2002-03-05 2003-11-11 Hitachi High-Technologies Corporation Wafer stage for wafer processing apparatus and wafer processing method
GB2386907B (en) 2002-03-27 2005-10-26 Isle Coat Ltd Process and device for forming ceramic coatings on metals and alloys, and coatings produced by this process
US7311797B2 (en) 2002-06-27 2007-12-25 Lam Research Corporation Productivity enhancing thermal sprayed yttria-containing coating for plasma reactor
US6852433B2 (en) * 2002-07-19 2005-02-08 Shin-Etsu Chemical Co., Ltd. Rare-earth oxide thermal spray coated articles and powders for thermal spraying
KR100460143B1 (en) * 2002-08-02 2004-12-03 삼성전자주식회사 Process chamber for using semiconductor fabricating equipment
US6963043B2 (en) * 2002-08-28 2005-11-08 Tokyo Electron Limited Asymmetrical focus ring
JP3776856B2 (en) * 2002-09-13 2006-05-17 株式会社日立ハイテクノロジーズ Plasma processing apparatus and plasma processing method
US7137353B2 (en) 2002-09-30 2006-11-21 Tokyo Electron Limited Method and apparatus for an improved deposition shield in a plasma processing system
US7147749B2 (en) * 2002-09-30 2006-12-12 Tokyo Electron Limited Method and apparatus for an improved upper electrode plate with deposition shield in a plasma processing system
US6798519B2 (en) * 2002-09-30 2004-09-28 Tokyo Electron Limited Method and apparatus for an improved optical window deposition shield in a plasma processing system
US6837966B2 (en) * 2002-09-30 2005-01-04 Tokyo Electron Limeted Method and apparatus for an improved baffle plate in a plasma processing system
US7166166B2 (en) * 2002-09-30 2007-01-23 Tokyo Electron Limited Method and apparatus for an improved baffle plate in a plasma processing system
US7204912B2 (en) 2002-09-30 2007-04-17 Tokyo Electron Limited Method and apparatus for an improved bellows shield in a plasma processing system
US7166200B2 (en) 2002-09-30 2007-01-23 Tokyo Electron Limited Method and apparatus for an improved upper electrode plate in a plasma processing system
US20040060779A1 (en) * 2002-10-01 2004-04-01 Charles Kreger Distance compensating shim for clutch/brake and method of determining same
TW200423195A (en) 2002-11-28 2004-11-01 Tokyo Electron Ltd Internal member of a plasma processing vessel
US6806949B2 (en) 2002-12-31 2004-10-19 Tokyo Electron Limited Monitoring material buildup on system components by optical emission
US6894769B2 (en) 2002-12-31 2005-05-17 Tokyo Electron Limited Monitoring erosion of system components by optical emission
JP2004241203A (en) * 2003-02-04 2004-08-26 Hitachi High-Technologies Corp Plasma treatment chamber wall treatment method
CN100418187C (en) 2003-02-07 2008-09-10 东京毅力科创株式会社 Plasma processing apparatus, annular component and plasma processing method
US7029536B2 (en) 2003-03-17 2006-04-18 Tokyo Electron Limited Processing system and method for treating a substrate
KR101016913B1 (en) 2003-03-31 2011-02-22 도쿄엘렉트론가부시키가이샤 Barrier layer for processing element and method of forming the same
KR100918528B1 (en) 2003-03-31 2009-09-21 도쿄엘렉트론가부시키가이샤 A method for adjoining adjacent coatings on a processing element
US20040244949A1 (en) 2003-05-30 2004-12-09 Tokyo Electron Limited Temperature controlled shield ring
US20050011447A1 (en) * 2003-07-14 2005-01-20 Tokyo Electron Limited Method and apparatus for delivering process gas to a process chamber
US7064812B2 (en) * 2003-08-19 2006-06-20 Tokyo Electron Limited Method of using a sensor gas to determine erosion level of consumable system components
US7001482B2 (en) * 2003-11-12 2006-02-21 Tokyo Electron Limited Method and apparatus for improved focus ring
US7461614B2 (en) 2003-11-12 2008-12-09 Tokyo Electron Limited Method and apparatus for improved baffle plate
US8083853B2 (en) * 2004-05-12 2011-12-27 Applied Materials, Inc. Plasma uniformity control by gas diffuser hole design
US7785672B2 (en) * 2004-04-20 2010-08-31 Applied Materials, Inc. Method of controlling the film properties of PECVD-deposited thin films
US8074599B2 (en) * 2004-05-12 2011-12-13 Applied Materials, Inc. Plasma uniformity control by gas diffuser curvature
US7552521B2 (en) * 2004-12-08 2009-06-30 Tokyo Electron Limited Method and apparatus for improved baffle plate
US7601242B2 (en) * 2005-01-11 2009-10-13 Tokyo Electron Limited Plasma processing system and baffle assembly for use in plasma processing system
US7650933B2 (en) 2005-03-14 2010-01-26 Allied Engineering Company, Division Of E-Z-Rect Manufacturing Ltd. Baffle for sealed combustion chamber

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102647846A (en) * 2011-02-15 2012-08-22 东京毅力科创株式会社 Upper electrode and plasma processing apparatus

Also Published As

Publication number Publication date
US20060118045A1 (en) 2006-06-08
US7552521B2 (en) 2009-06-30
KR20070083779A (en) 2007-08-24
TW200633600A (en) 2006-09-16
JP2008523613A (en) 2008-07-03
JP5361189B2 (en) 2013-12-04
WO2006062576A3 (en) 2007-01-18

Similar Documents

Publication Publication Date Title
US7552521B2 (en) Method and apparatus for improved baffle plate
US6837966B2 (en) Method and apparatus for an improved baffle plate in a plasma processing system
US7166200B2 (en) Method and apparatus for an improved upper electrode plate in a plasma processing system
US7166166B2 (en) Method and apparatus for an improved baffle plate in a plasma processing system
US6798519B2 (en) Method and apparatus for an improved optical window deposition shield in a plasma processing system
US7147749B2 (en) Method and apparatus for an improved upper electrode plate with deposition shield in a plasma processing system
US7137353B2 (en) Method and apparatus for an improved deposition shield in a plasma processing system
US7461614B2 (en) Method and apparatus for improved baffle plate
US7678226B2 (en) Method and apparatus for an improved bellows shield in a plasma processing system
US7001482B2 (en) Method and apparatus for improved focus ring
KR101016913B1 (en) Barrier layer for processing element and method of forming the same

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KM KP KR KZ LC LK LR LS LT LU LV LY MA MD MG MK MN MW MX MZ NA NG NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SM SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): BW GH GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LT LU LV MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 2007545448

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 1020077009293

Country of ref document: KR

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 05820047

Country of ref document: EP

Kind code of ref document: A2