CN114334593B - Confinement ring, plasma processing device and exhaust method thereof - Google Patents
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- CN114334593B CN114334593B CN202011046748.7A CN202011046748A CN114334593B CN 114334593 B CN114334593 B CN 114334593B CN 202011046748 A CN202011046748 A CN 202011046748A CN 114334593 B CN114334593 B CN 114334593B
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- 238000006243 chemical reaction Methods 0.000 claims description 38
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- 229910000838 Al alloy Inorganic materials 0.000 claims description 3
- 239000006227 byproduct Substances 0.000 claims description 3
- 238000007599 discharging Methods 0.000 claims description 2
- 239000002245 particle Substances 0.000 abstract description 9
- 238000000151 deposition Methods 0.000 abstract 1
- 230000008021 deposition Effects 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 239000013618 particulate matter Substances 0.000 description 3
- 238000010276 construction Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
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- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Abstract
The invention discloses a confinement ring, a plasma processing device and an exhaust method thereof. The restriction ring comprises a plurality of ring bodies and a plurality of ribs, the ring bodies are concentrically arranged, an annular gap exists between two adjacent ring bodies, and the annular gap is used as a gas channel of the restriction ring; the ribs are arranged below the ring body, the ribs are uniformly distributed along the circumferential direction of the ring body, each rib is intersected with all the ring bodies, and the ring bodies are connected into a whole. In the present invention, each rib is at least partially non-radially disposed, thereby avoiding complete blockage of one radial air flow; the cross section of the rib is designed into a trapezoid, so that the top surface of the rib is narrowed, the bottom surface of the rib is wider than the width of the annular wall of the annular body, the blocking of the rib to air flow is further reduced, the air distribution is uniform, no mutual disturbance exists, and particles are discharged and are prevented from depositing on the surface of a wafer.
Description
Technical Field
The invention belongs to the technical field of plasma etching, and particularly relates to a confinement ring, a plasma processing device and an exhaust method of the device.
Background
In a plasma processing apparatus, a reaction gas is generally introduced into a reaction chamber to generate plasma, and the plasma processing apparatus is used for performing plasma deposition, etching and other processes on a wafer placed in the reaction chamber, and particulate matters generated in the process of processing are discharged outside the reaction chamber through a molecular pump or a dry pump below the chamber.
The confinement ring is disposed within the reaction chamber around a susceptor carrying a wafer, and fig. 1 is a bottom view of a conventional confinement ring structure. As shown in fig. 1, a plurality of ring bodies 1 of the confinement rings are concentrically arranged, annular gas channels 2 are formed between the ring bodies 1, and gas in the reaction chamber enters the exhaust area through the annular gas channels 2. The constraint ring is limited by the mechanical structural design requirement, a plurality of ribs 3 are arranged below the ring body 1 of the constraint ring, and the ring bodies 1 are connected into a whole through the ribs 3. Each rib 3 is arranged along the radial direction of the ring body 1, and blocks the gas flow to a certain extent in the radial direction, so that the gas disturbance of a local area is caused, and local particles in the reaction cavity cannot be discharged out of the reaction cavity along a specified path, and uneven deposition distribution is formed on the surface of the wafer. FIG. 2 is a graph of the wafer surface particle distribution, as can be readily seen from FIG. 2, where the regions of particle deposition correspond to the distribution and number of ribs on the confinement rings. The accumulation and uneven distribution of particles on the wafer surface can cause the non-uniformity of the etching rate of the wafer, and affect the etching quality.
Disclosure of Invention
The invention provides a confinement ring, a plasma processing device and an exhaust method thereof, wherein the confinement ring structure is optimized, so that gas in a reaction cavity of the plasma processing device is uniformly distributed, radial complete blocking of gas flow is avoided, mutual disturbance among the gases is reduced, and then particles in the reaction cavity are exhausted along a specified path.
One aspect of the present invention provides a confinement ring including a plurality of ring bodies and a plurality of ribs; the ring bodies are concentrically arranged, and gaps between adjacent ring bodies form gas channels; each rib is arranged below the ring body and is intersected with all the ring bodies; a portion of each rib is non-perpendicular to a tangent of the ring body at the intersection point.
Optionally, the rib top surface has a width less than the rib bottom surface; the top surface of the rib is connected with the bottom surface of the ring body.
Optionally, the rib has a trapezoidal cross section, and the rib includes a side surface located between a top surface of the rib and a bottom surface of the rib, at least one of the side surfaces being inclined.
Optionally, the inclined side surface forms an angle with the bottom surface of the rib of more than 45 °.
Optionally, the rib bottom surface has a width that is no greater than the width of the single ring body.
Optionally, the plurality of ribs are evenly distributed along a circumference of the ring body.
Optionally, each rib is connected to one or more of the same ring body.
Optionally, each rib is a straight line segment intersecting the ring body, the rib forming an angle with a tangent to the ring body at the intersection point of less than 90 °.
Optionally, each rib is an arcuate segment.
Optionally, each two ribs form a rib group; two ribs in the rib group are symmetrically arranged, and the two ribs are connected with each other or are separated from each other; the plurality of rib groups are uniformly distributed along the circumferential direction of the ring body.
Optionally, each rib comprises one or more first portions along the circumference of the ring body, and one or more second portions for connecting the ring body.
Optionally, the ring body and the ribs are made of aluminum alloy.
Another technical scheme of the invention is to provide a plasma processing device, which comprises a reaction cavity, wherein a base is arranged in the reaction cavity and is used for bearing a wafer; the reaction chamber is filled with reaction gas to form plasma for processing the wafer; the reaction cavity is connected with an exhaust pump and is used for discharging byproducts generated by processing the wafer out of the reaction cavity;
the plasma processing device further comprises any one of the confinement rings, wherein the confinement ring is arranged around the base in the reaction cavity; the constraint ring is arranged above the exhaust pump and is used for constraining plasma; the confinement ring includes a plurality of rings and a plurality of ribs; the ring bodies are concentrically arranged, and gaps between adjacent ring bodies form gas channels; each rib is arranged below the ring body and is intersected with all the ring bodies; a portion of each rib is non-perpendicular to a tangent of the ring body at the intersection point.
Another technical scheme of the invention is to provide an exhaust method, which is applicable to the plasma processing device, wherein the gas in the reaction cavity flows to a constraint ring surrounding a base, passes through a gas channel of the constraint ring, is discharged to an exhaust area below the constraint ring, and is discharged through an exhaust pump; the gas flowing out of the gas passage flows to the exhaust area along the side surface of the rib when flowing to the area provided with the rib, so that the gas is uniformly distributed in the area provided with the rib.
Compared with the prior art, the confinement ring, the plasma processing device and the exhaust method thereof have the advantages that:
according to the invention, the ribs arranged below the ring body are at least partially not perpendicular to the tangent line of the ring body at the intersection point, so that the blocking of the ribs to the air flow in the radial direction is reduced; the rib cross section design of example is trapezoidal, makes the rib top surface of connector ring body narrow, and the air current that flows out from the gas channel flows to the exhaust area along the side of rib slope, reduces the disturbance between the gas, and gas distribution is even in the reaction chamber, and the particulate matter is discharged the reaction chamber along with the air current to avoid taking place the problem such as piling up, the uneven distribution of particulate matter on the wafer surface.
Drawings
FIG. 1 is a top view of a prior art confinement ring structure;
FIG. 2 is a graph of wafer surface particulate matter distribution;
FIG. 3 is a schematic cross-sectional view of a rib in the direction A-A according to the present invention;
FIG. 4 is a top view of the ring structure according to the embodiment of the present invention;
FIGS. 5 and 6 are top views of a confinement ring structure in accordance with a first embodiment of the invention;
FIGS. 7 and 8 are top views showing the structure of a confinement ring in accordance with a second embodiment of the invention;
FIGS. 9 and 10 are top views showing the construction of a confinement ring in accordance with a third embodiment of the invention;
FIGS. 11 and 12 are top views showing the structure of a confinement ring in accordance with a fourth embodiment of the invention;
FIG. 13 is a top view of a confinement ring structure in accordance with a fifth embodiment of the invention;
FIGS. 14 and 15 are top views showing the construction of a confinement ring in accordance with a sixth embodiment of the invention;
fig. 16 is a schematic view of a plasma processing apparatus according to the present invention.
Detailed Description
The invention provides a confinement ring for a plasma processing apparatus, comprising a plurality of ring bodies 1 and a plurality of ribs 3. The plurality of ring bodies 1 are concentrically arranged, and an annular gap exists between two adjacent ring bodies 1 and is used as a gas channel 2 of the constraint ring. The ribs 3 are arranged below the ring body, specifically, a plurality of ribs 3 are uniformly distributed along the circumferential direction of the ring body on the bottom surface of the ring body; each rib 3 intersects all the rings 1; the plurality of rings 1 may be connected by ribs 3. The ring body 1 and the ribs are made of the same material and are made of aluminum alloy.
An exemplary rib has a trapezoidal cross-section in the A-A direction, as shown in fig. 3. The rib includes a rib top surface a, a rib bottom surface b opposite to the rib top surface, and a side surface c between the rib top surface and the rib bottom surface. The width of the rib top surface a is smaller than that of the rib bottom surface b; the rib is connected with the bottom surface of the ring body through the rib top surface a. The width of the rib bottom surface b is equal to or smaller than the width of the single ring body, and the narrow width of the rib top surface a corresponding to the position of the gas channel 2 can reduce the blocking of the gas flow by the ribs. In particular cases, for example, where it is desired to change the direction of the air flow through the ribs, the width of the bottom surfaces of the ribs may be greater than the width of the ring body wall or may be at other angles to the sides. At least one of the side faces c of the rib is inclined, and the angle θ between the inclined side face and the bottom face of the rib needs to be greater than 45 °. After the gas flows out of the gas channel 2, it can continue along the side c of the rib below the ring body 1.
Each rib may intersect one ring 1 or may intersect multiple (one rib may intersect one ring 1 or multiple intersections). At least a portion of each rib is non-perpendicular to a tangent at its intersection with the ring body. For example, each rib may not be disposed radially of the ring body, or a portion of each rib may not be disposed radially of the ring body.
The following describes the rib disposed at the bottom of the ring body in detail by taking the constraint ring including four ring bodies 1 as an example, and it should be noted that the number of the ring bodies 1 and the shape of the rib in the constraint ring are not limited, and may be selected according to the actual application, and thus described. In each of the following embodiments, the ring body in the constraint ring is sequentially from the center of the circle outwards: a first ring 11, a second ring 12, a third ring 13 and a fourth ring 14; the gas channel is sequentially from the center of a circle outwards: a first gas passage 21, a second gas passage 22, and a third gas passage 23, as shown in fig. 4.
Example 1
Fig. 5 is a top view of a confinement ring structure according to a first embodiment of the invention. An arcuate rib 31 is provided on the underside of the ring body as shown in fig. 5. The present example uses four ribs 31 which are evenly distributed along the circumference of the ring body at the bottom surface of the ring body; each rib 31 intersects all of the rings to connect the rings together. Specifically, two ends 311 of each rib 31 are respectively connected to different positions of the fourth ring 14, the arc top 312 of the rib 31 is connected to the first ring 11, and the rib 31 has an intersection with the first ring 11 of the innermost layer, and two intersection points with the second ring 12, the third ring 13 and the fourth ring 14 respectively, as shown in fig. 5.
Alternatively, as shown in fig. 6, in the first embodiment, two ends 311 of each rib 31 are respectively connected to different positions of the first ring 11, the arc top 312 of each rib 31 is connected to the fourth ring 14, and the rib 31 has an intersection point with the fourth ring 14 on the outermost layer, and two intersection points with the first ring 11, the second ring 12, and the third ring 13 respectively. The arcuate design avoids the ribs completely blocking the air flow in one radial direction.
Example two
Fig. 7 is a top view of a confinement ring structure in a second embodiment of the invention. A linear rib 32 is provided on the underside of the ring body as shown in fig. 7. Eight ribs 32 are used in this example, and are evenly distributed along the circumference of the ring at the bottom surface of the ring; each rib 32 intersects all of the rings to join the rings together. Specifically, one end 321 of each rib 32 is connected with the first ring body 11 of the innermost layer, the other end 322 is connected with the fourth ring body 14 of the outermost layer, and the middle part of each rib 32 is correspondingly connected with the second ring body 12 and the third ring body 13; one rib 32 intersects a location on one ring (one rib 32 intersects one ring). The angle α formed by each rib 32 and the tangent of the ring body at the intersection point is less than 90 °, i.e. each rib 32 is not perpendicular to the tangent of the ring body at the intersection point, and the ribs are not radially arranged, thereby avoiding that the straight ribs 32 completely block the air flow in one radial direction.
Alternatively, in the second embodiment, the bottom surface of the ring body is provided with linear ribs 32, and each rib 32 intersects all ring bodies once; the angle α formed by each rib 32 and the tangent to the ring body at the intersection point may have different angles and/or directions. For example, as shown in fig. 8, two adjacent ribs 32 are symmetrically disposed.
Example III
Fig. 9 is a top view of a confinement ring structure in accordance with a third embodiment of the invention. An arcuate rib 33 is provided on the underside of the ring body as shown in fig. 9. The eight arc ribs 33 are uniformly distributed on the bottom surface of the ring body along the circumferential direction of the ring body; each rib 33 intersects all of the rings to connect the rings together. Specifically, one end 331 of the arc rib 33 is connected to the first ring 11 of the innermost layer, the other end 332 is connected to the fourth ring 14 of the outermost layer, and the middle portion of the rib 33 is correspondingly connected to the second ring 12 and the third ring 13.
Unlike the arcuate rib 31 of the first embodiment, the rib 33 in this example intersects a single point on a ring, and there is only a single intersection of a rib 33 with a ring.
The direction and/or curvature of each arcuate rib may be the same or different.
For example, in the third embodiment, arc-shaped ribs 33 are provided on the bottom surface of the ring body, each rib 33 intersects all ring bodies once, and two adjacent ribs 33 are symmetrically provided, as shown in fig. 10.
Example IV
Fig. 11 is a top view of a confinement ring structure in a fourth embodiment of the invention. As shown in fig. 11, a plurality of ribs 34 are uniformly distributed on the bottom surface of the ring body in the circumferential direction of the ring body, and each rib 34 is shaped like a Z. Each rib 34 intersects all of the rings to join the rings together.
The rib 34 comprises a first portion 341 and two second portions 342. Specifically, the second portions are connected to the first portions at both ends thereof, and the two second portions are disposed to extend on both sides of the first portions, respectively, so as to form the zigzag-like rib 34. The first portion 341 is an arc segment, is disposed along the circumferential direction of the ring body corresponding to the first portion and is attached to the bottom surface of the corresponding ring body.
In this example, the radian of the first portion 341 is consistent with that of the second ring body 12, so that the first portion 341 is attached to the bottom surface of the second ring body 12 and is arranged along the circumferential direction of the ring body, and the blocking of the first portion 341 to the air flow in the surrounding air channel is reduced. Meanwhile, the second portion 342 is linear, and one second portion 342 extends to the first ring body 11 and intersects with the first ring body 11; the other second portion 342 extends toward the third ring 13 and the fourth ring 14 and intersects the third ring 13 and the fourth ring 14, respectively, thereby integrally connecting the rings as shown in fig. 14.
Alternatively, the radian of the first portion 341 is consistent with that of the third ring body 13, so that the first portion 341 is attached to the bottom surface of the third ring body 13 and is arranged along the circumferential direction of the ring body; meanwhile, the second portion 342 is linear, and one second portion 342 extends to the first ring body 11 and the second ring body 12 and intersects with the first ring body 11 and the second ring body 12 respectively; the other second portion 342 extends toward the fourth ring 14 and intersects the fourth ring 14 to unite the rings as shown in fig. 12.
In this example, the two second portions 342 may be both linear or arc-shaped, or may even be one linear and the other arc-shaped; and, at the both ends of first part, two second parts can all set up along radial, also can all not set up along radial, also can one along radial, and another is not along radial, can nimble the choice as required in the practical application.
Example five
In the invention, the rib groups can be arranged below the ring body, and the plurality of rib groups are uniformly distributed along the circumferential direction of the ring body on the bottom surface of the ring body. The rib groups disposed at the bottom of the ring body will be described in detail by the following embodiments, and it should be noted that the specific shape of the rib groups is not limited in the present invention, and may be set according to the needs in practical application, and thus described.
Fig. 13 is a top view of a confinement ring structure in a fifth embodiment of the invention. As shown in fig. 13, a plurality of rib groups 41 are uniformly distributed on the bottom surface of the ring body in the circumferential direction of the ring body, and each rib group 41 has an X-shape. In this example, the rib group 41 is formed by intersecting two linear ribs; the intersection point O of the rib group 41 is located on the second gas channel 22, so that two ribs in the rib group 41 are prevented from blocking the gas channel at different positions respectively, the blocking of the rib group to the gas flow is reduced, and each rib in the rib group 41 is connected with all ring bodies, so that all ring bodies are connected into a whole; and each rib is connected by its top surface intersecting the bottom surface of the ring body.
The rib group 41 in this example may also be formed of two arc-shaped ribs, or one straight-shaped rib and one arc-shaped rib.
Alternatively, in other examples, each rib is an X-shaped structure, and can be used in place of the rib groups 41 described in embodiment five.
Example six
Fig. 14 is a top view of a confinement ring structure in a sixth embodiment of the invention. As shown in fig. 14, a plurality of rib groups 42 are uniformly distributed on the bottom surface of the ring body along the circumferential direction of the ring body, and the rib groups 42 are herringbone. In this example, the rib group 42 has two linear ribs each having one end (referred to as a connecting end 421) connected to each other (the other end of each rib is referred to as a branching end 422); the connecting ends 421 of the rib groups 42 are connected to the fourth ring 14 on the outermost layer, and the two branch ends 422 are respectively connected to different positions of the first ring 11, as shown in fig. 14; alternatively, the connection ends 421 of the rib groups 42 are connected to the first ring body 11 of the innermost layer, and the two branch ends 422 are respectively connected to different positions of the fourth ring body 14, as shown in fig. 15.
The rib group 42 in this example may also be formed of two arc-shaped ribs, or one straight rib and one arc-shaped rib.
Alternatively, in other examples, each rib is a chevron-shaped structure, which can be used in place of the individual rib groups 42 described in embodiment six.
The invention also provides a plasma processing device which is a capacitive coupling type plasma etching device or an inductive coupling type plasma reaction device. The plasma processing apparatus uses any of the confinement rings described above, as shown in fig. 16. The plasma processing device is used for carrying out plasma deposition, etching and other treatments on the wafer, and comprises a reaction cavity, wherein a pedestal 6 is arranged in the reaction cavity and is used for bearing the wafer 7. In the reaction chamber of the plasma processing apparatus, the confinement ring is located between the susceptor 6 and the chamber wall 5 of the reaction chamber, and the confinement ring is disposed around the susceptor 6. Below the confinement rings is an exhaust zone, as shown in fig. 16. The reaction cavity is communicated with a gas supply device 8, and reaction gas is injected into the reaction cavity through the gas supply device 8 to form plasma 10 for processing the wafer 7; the reaction chamber is also communicated with an exhaust pump 9, and the reaction gas is pumped out of the reaction chamber through the exhaust pump 9, and byproducts generated by processing the wafer, such as particles and the like, are discharged out of the reaction chamber along with the gas flow. The exhaust pump 9 may be a molecular pump or a dry pump.
When the exhaust pump is operated, the gas in the reaction chamber flows from above the wafer 7 to the confinement ring surrounding the susceptor 6, passes through the gas passage 2 of the confinement ring, is discharged to the exhaust area below the confinement ring, and is exhausted from the reaction chamber through the exhaust pump 9. The confinement rings confine the plasma in the reaction zone while exhausting the gas, avoiding leakage of the plasma to the exhaust zone. When the gas flowing out of the gas channel 2 flows to the area provided with the ribs 3 at the bottom of the ring body 1, part of the gas flow encounters the ribs 3, and flows from the top surface of the ribs to the side surfaces of the ribs, and flows to the exhaust area along the inclined side surfaces of the ribs. At least a portion of each rib is not perpendicular to a tangent to the ring body at the intersection point, avoiding the ribs completely blocking air flow in one radial direction; meanwhile, the top surface of the rib is narrow, and the width of the bottom surface of the rib is not larger than the width of the annular wall of the ring body, so that the air flow blocking of the rib is further reduced. The gas is uniformly distributed in the area provided with the ribs, so that the gas disturbance in the local area is avoided, and the particles are discharged out of the reaction cavity along with the gas flow, so that the deposition of the particles on the surface of the wafer is avoided.
While the present invention has been described in detail through the foregoing description of the preferred embodiment, it should be understood that the foregoing description is not to be considered as limiting the invention. Many modifications and substitutions of the present invention will become apparent to those of ordinary skill in the art upon reading the foregoing. Accordingly, the scope of the invention should be limited only by the attached claims.
Claims (14)
1. A confinement ring for a plasma processing apparatus comprising a plurality of rings and a plurality of ribs; the ring bodies are concentrically arranged, and gaps between adjacent ring bodies form gas channels; each rib is arranged below the ring body and is intersected with all the ring bodies; at least a portion of each rib is non-perpendicular to a tangent of the ring body at the intersection point to avoid the ribs from completely blocking air flow in one radial direction.
2. The confinement ring of claim 1 wherein said rib top surface has a width less than a width of the rib bottom surface; the top surface of the rib is connected with the bottom surface of the ring body.
3. The confinement ring of claim 2 wherein said rib has a trapezoidal cross section, said rib including side surfaces located between a top surface of the rib and a bottom surface of the rib, at least one of said side surfaces being sloped.
4. A confinement ring as claimed in claim 3 wherein the inclined side faces form an angle of greater than 45 ° with the rib base faces.
5. The confinement ring of claim 2 wherein said rib bottom surface has a width no greater than the width of a single ring body.
6. The confinement ring of claim 1, wherein said plurality of ribs are evenly distributed along a circumference of said ring body.
7. The confinement ring of claim 1, wherein each rib is connected to one or more of the same ring body.
8. The confinement ring of claim 1, wherein each rib is a straight segment intersecting the ring body, the rib forming an angle with a tangent to the ring body at the intersection point of less than 90 °.
9. The confinement ring of claim 1 wherein each rib is an arcuate segment.
10. The confinement ring of claim 1 wherein each two ribs form a rib group; two ribs in the rib group are symmetrically arranged, and the two ribs are connected with each other or are separated from each other; the plurality of rib groups are uniformly distributed along the circumferential direction of the ring body.
11. The confinement ring of claim 1, wherein each rib comprises one or more first portions along the circumference of the ring body, and one or more second portions for connecting the ring body.
12. The confinement ring of claim 1 wherein said ring body and said ribs are aluminum alloy.
13. A plasma processing apparatus includes a reaction chamber having a susceptor disposed therein for carrying a wafer; the reaction chamber is filled with reaction gas to form plasma for processing the wafer; the reaction cavity is connected with an exhaust pump and is used for discharging byproducts generated by processing the wafer out of the reaction cavity; it is characterized in that the method comprises the steps of,
further comprising a confinement ring as recited in any one of claims 1 to 12 disposed around the base within the reaction chamber; the confinement rings are disposed above the exhaust pump for confining the plasma.
14. A method of exhausting gas, adapted to the plasma processing apparatus of claim 13, wherein the gas in the reaction chamber flows to a confinement ring surrounding the susceptor, passes through a gas passage of the confinement ring, is exhausted to an exhaust area under the confinement ring, and is exhausted by an exhaust pump; the gas flowing out of the gas channel flows to the exhaust area along the side surface of the rib when flowing to the area provided with the rib, so that the gas is uniformly distributed in the area provided with the rib.
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| CN115841939B (en) * | 2023-02-27 | 2023-05-05 | 深圳市新凯来技术有限公司 | Confinement ring and semiconductor etching apparatus |
| CN115954257B (en) * | 2023-03-14 | 2023-05-23 | 长鑫存储技术有限公司 | Substrate processing apparatus, gas confinement assembly, and adjustment method and adjustment apparatus therefor |
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| CN103177925A (en) * | 2011-12-23 | 2013-06-26 | 中微半导体设备(上海)有限公司 | Adjustable limiting ring used for plasma processing device |
| CN103594316A (en) * | 2012-08-14 | 2014-02-19 | 朗姆研究公司 | Plasma baffle ring for a plasma processing apparatus and method of use |
| JP2015032819A (en) * | 2013-08-07 | 2015-02-16 | 株式会社ディスコ | Plasma etching device |
| CN105789015A (en) * | 2014-12-26 | 2016-07-20 | 中微半导体设备(上海)有限公司 | Plasma treatment device for achieving uniform exhaust |
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| CN114334593A (en) | 2022-04-12 |
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