WO2006058860A3 - Wärmeaustauschvorrichtung für ein halbleiterbauelement und verfahren zu ihrer herstellung - Google Patents

Wärmeaustauschvorrichtung für ein halbleiterbauelement und verfahren zu ihrer herstellung Download PDF

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Publication number
WO2006058860A3
WO2006058860A3 PCT/EP2005/056187 EP2005056187W WO2006058860A3 WO 2006058860 A3 WO2006058860 A3 WO 2006058860A3 EP 2005056187 W EP2005056187 W EP 2005056187W WO 2006058860 A3 WO2006058860 A3 WO 2006058860A3
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WO
WIPO (PCT)
Prior art keywords
heat exchange
exchange device
producing
layer
structural component
Prior art date
Application number
PCT/EP2005/056187
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English (en)
French (fr)
Other versions
WO2006058860A2 (de
Inventor
Eric Baudelot
Thomas Licht
Norbert Seliger
Karl Weidner
Original Assignee
Siemens Ag
Infineon Technologies Ag
Eric Baudelot
Thomas Licht
Norbert Seliger
Karl Weidner
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Application filed by Siemens Ag, Infineon Technologies Ag, Eric Baudelot, Thomas Licht, Norbert Seliger, Karl Weidner filed Critical Siemens Ag
Publication of WO2006058860A2 publication Critical patent/WO2006058860A2/de
Publication of WO2006058860A3 publication Critical patent/WO2006058860A3/de

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5389—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates the chips being integrally enclosed by the interconnect and support structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L24/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L24/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H01L2224/2405—Shape
    • H01L2224/24051—Conformal with the semiconductor or solid-state device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H01L2224/241—Disposition
    • H01L2224/24151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/24221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/24225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/24226—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the HDI interconnect connecting to the same level of the item at which the semiconductor or solid-state body is mounted, e.g. the item being planar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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    • H01L2924/01005—Boron [B]
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    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
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    • H01—ELECTRIC ELEMENTS
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

Die Erfindung betrifft eine Wärmeaustauschvorrichtung und ein Verfahren zum Herstellen der Wärmeaustauschvorrichtung. Daneben werden eine Anordnung eines Bauelements und der Wärmeaustauschvorrichtung und ein Verfahren zum Herstellen der Anordnung angegeben. Die Wärmeaustauschvorrichtung weist mindestens einen Schichtverbund mit einer Schicht und mindestens einer weiteren Schicht auf, wobei zwischen der Schicht und der weiteren Schicht ein Fluidkanal zum Durchleiten eines Temperierfluids derart angeordnet ist, dass der Fluidkanal von beiden Schichten begrenzt ist und zumindest eine der Schichten eine Kunststofffolie aufweist. Zum Herstellen der Wärmeaustauschvorrichtung werden folgende Verfahrensschritte angegeben: a) Bereitstellen einer Schicht mit einem Graben und b) Auflaminieren einer Kunststofffolie auf die Schicht mit dem Graben derart, dass der Fluidkanal gebildet wird. Bei der Anordnung sind die Wärmeaustauschvorrichtung und das Bauelement derart aneinander angeordnet, dass ein Wärmeaustausch durch Wärmeleitung zwischen dem Bauelement und zumindest einer der Schichten des Schichtverbunds der Wärmeaustauschvorrichtung stattfinden kann. Zum Herstellen der Anordnung werden folgende Verfahrensschritten durchgeführt: a') Bereitstellen eines Bauelements auf einem Substrat und b') Aufbringen der Wärmeaustauschvorrichtung derart, dass eine Wärmeleitung zwischen dem Bauelement und mindestens einer der Schichten des Schichtverbunds stattfinden kann. Die Wärmeaustauschvorrichtung wird zur Kühlung eines Leistungshalbleitermoduls verwendet.
PCT/EP2005/056187 2004-11-29 2005-11-24 Wärmeaustauschvorrichtung für ein halbleiterbauelement und verfahren zu ihrer herstellung WO2006058860A2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102004057497.9 2004-11-29
DE200410057497 DE102004057497B4 (de) 2004-11-29 2004-11-29 Wärmeaustauschvorrichtung und Verfahren zum Herstellen der Wärmeaustauschvorrichtung sowie Anordnung eines Bauelements und der Wärmeaustauschvorrichtung und Verfahren zum Herstellen der Anordnung

Publications (2)

Publication Number Publication Date
WO2006058860A2 WO2006058860A2 (de) 2006-06-08
WO2006058860A3 true WO2006058860A3 (de) 2006-08-17

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WO (1) WO2006058860A2 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102017211619A1 (de) 2017-02-08 2018-08-09 Siemens Aktiengesellschaft Verfahren zur elektrischen Kontaktierung und Leistungsmodul
WO2023160949A1 (de) 2022-02-23 2023-08-31 Siemens Aktiengesellschaft Halbleiteranordnung mit einem ersten halbleiterelement und einem ersten verbindungselement
EP4235771A1 (de) * 2022-02-23 2023-08-30 Siemens Aktiengesellschaft Halbleiteranordnung mit zumindest einem halbleiterelement, einer ersten materiallage und einer zweiten materiallage

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0467711A1 (de) * 1990-07-20 1992-01-22 Minnesota Mining And Manufacturing Company Ein mit einem beweglichen Ableiter versehenes Wärmeübertragungsgerät mittels Durchfluss
EP0508717A1 (de) * 1991-04-08 1992-10-14 General Electric Company Integrierte Wärmesenke für Halbleitermodule
US5210440A (en) * 1991-06-03 1993-05-11 Vlsi Technology, Inc. Semiconductor chip cooling apparatus
DE4210834A1 (de) * 1992-04-01 1993-10-14 Siemens Nixdorf Inf Syst Einrichtung zum Kühlen von zu Flachbaugruppen zusammengefaßten gehäuselosen filmmontierten integrierten Bausteinen
JP2001024125A (ja) * 1999-07-09 2001-01-26 Fuji Electric Co Ltd 平形半導体素子
WO2004077547A2 (de) * 2003-02-28 2004-09-10 Siemens Aktiengesellschaft Verbindungstechnik für leistungshalbleiter mit grossflächigen anschlüssen

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH487504A (de) * 1968-03-09 1970-03-15 Mitsubishi Electric Corp Halbleitervorrichtung
DE4217289C2 (de) * 1992-05-25 1996-08-29 Mannesmann Ag Fluidgekühlte Leistungstransistoranordnung
US6907921B2 (en) * 1998-06-18 2005-06-21 3M Innovative Properties Company Microchanneled active fluid heat exchanger
DE19920161A1 (de) * 1998-11-06 2000-05-25 Atotech Deutschland Gmbh Verfahren zum Herstellen von Mikrobauteilen mit Strömungskanälen
DE10062108B4 (de) * 2000-12-13 2010-04-15 Infineon Technologies Ag Leistungsmodul mit verbessertem transienten Wärmewiderstand
AU2002340750A1 (en) * 2001-09-28 2003-04-14 Siemens Aktiengesellschaft Method for contacting electrical contact surfaces of a substrate and device consisting of a substrate having electrical contact surfaces
AU2003222780A1 (en) * 2002-03-26 2003-10-08 Peter Prechtl Micro-reactor and micro-channel heat exchanger
FR2850742B1 (fr) * 2003-01-30 2005-09-23 Snecma Propulsion Solide Panneau de refroidissement actif en materiau composite thermostructural et procede pour sa fabrication

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0467711A1 (de) * 1990-07-20 1992-01-22 Minnesota Mining And Manufacturing Company Ein mit einem beweglichen Ableiter versehenes Wärmeübertragungsgerät mittels Durchfluss
EP0508717A1 (de) * 1991-04-08 1992-10-14 General Electric Company Integrierte Wärmesenke für Halbleitermodule
US5210440A (en) * 1991-06-03 1993-05-11 Vlsi Technology, Inc. Semiconductor chip cooling apparatus
DE4210834A1 (de) * 1992-04-01 1993-10-14 Siemens Nixdorf Inf Syst Einrichtung zum Kühlen von zu Flachbaugruppen zusammengefaßten gehäuselosen filmmontierten integrierten Bausteinen
JP2001024125A (ja) * 1999-07-09 2001-01-26 Fuji Electric Co Ltd 平形半導体素子
WO2004077547A2 (de) * 2003-02-28 2004-09-10 Siemens Aktiengesellschaft Verbindungstechnik für leistungshalbleiter mit grossflächigen anschlüssen

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 16 8 May 2001 (2001-05-08) *

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WO2006058860A2 (de) 2006-06-08
DE102004057497A1 (de) 2006-06-01
DE102004057497B4 (de) 2012-01-12

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