WO2006032622A1 - Machine rotative multiposte de polissage de plaquettes de composants electroniques semi-conducteurs - Google Patents

Machine rotative multiposte de polissage de plaquettes de composants electroniques semi-conducteurs Download PDF

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Publication number
WO2006032622A1
WO2006032622A1 PCT/EP2005/054568 EP2005054568W WO2006032622A1 WO 2006032622 A1 WO2006032622 A1 WO 2006032622A1 EP 2005054568 W EP2005054568 W EP 2005054568W WO 2006032622 A1 WO2006032622 A1 WO 2006032622A1
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WO
WIPO (PCT)
Prior art keywords
cleaning
heads
plates
arms
wafers
Prior art date
Application number
PCT/EP2005/054568
Other languages
English (en)
Inventor
Massimiliano Pozzi
Gianfranco D'angelo
Original Assignee
Stmicroelectronics S.R.L.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Stmicroelectronics S.R.L. filed Critical Stmicroelectronics S.R.L.
Publication of WO2006032622A1 publication Critical patent/WO2006032622A1/fr

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools

Definitions

  • Multi-station rotary machine for polishing wafers of semiconductor electronic components
  • the present invention refers to a multi-station rotary machine for polishing wafers of semiconductor electronic components.
  • Multi-station rotary machines for polishing wafers comprising a machine body and a tower consisting of a plurality of heads each of which supports a wafer. Said tower rotates with a predefined pitch between a first station for loading/unloading the wafers and subsequent work stations all the same in which said heads position themselves on rotatable polishing plates.
  • Each head is provided with a mechanism that makes the wafer rotate while it interacts with the respective plate that in turn rotates.
  • a revolving cleaning arm with fixed rotation pin and rotating end in contact with the abovementioned plates that acts during the polishing, is used to eliminate the polishing residue.
  • each block is fitted with a plurality of upper holes and a couple of front holes with nozzles from which cleaning liquid under pressure exits and which, respectively, provide for cleaning of the wafers and creating a cloud which spreads out above all towards the outside of the machine.
  • the service arms also are fitted with a spraying nozzle that cleans the peripheral part of the plates.
  • the current cleaning system however does not enable the machine to be cleaned efficiently. At the end of several working cycles, above all the internal part of the tower and the cleaning arms present scaling that can be removed only through the action of an operator who is thus forced to interrupt the operation of the machine.
  • the glass itself is dirtied so much that it is difficult to see what is happening inside.
  • the object of the present invention is to fit the above mentioned rotary polishing machine with more efficient automatic cleaning means that limit the intervention of external operators with the consequent blocking of the machine.
  • a multi- station rotary machine for polishing wafers comprising a machine body and a rotating tower consisting of a plurality of heads each of which supports a wafer, said tower being made to rotate with predefined pitch between a first station for loading/unloading the wafers and subsequent work stations all the same, in which said heads position themselves on rotatable polishing plates on which, in the working phase, rotating cleaning arms with rotation pin and rotating end in contact with the above mentioned plates act, intermediate washing zones of the heads and of the wafers by means of cleaning means being provided between said work stations, characterised in that said cleaning means comprise washing liquid delivery blocks positioned between said plates and each one having an upper hole for delivering a nozzle spraying liquid under pressure for cleaning one of said heads and the lower part of the tower, and a supplementary hole connected to a further nozzle for cleaning the machine body and the rotation pin of one of said cleaning arms.
  • a multi- station rotary machine for polishing wafers comprising a machine body and a rotating tower consisting of a plurality of heads each of which supports a wafer, said tower being made to rotate with predefined pitch between a first station for loading/unloading the wafers and subsequent work stations all the same, in which said heads position themselves on rotatable polishing plates on which in the working phase, rotating cleaning arms with rotation pin and rotating end in contact with the above mentioned plates act, intermediate washing zones of the heads and of the wafers by means of cleaning means being provided between said work stations, characterised in that said cleaning means comprise service arms for delivering the washing liquid positioned above said plates with external support and each one having a supplementary lower hole connected to a tube that carries the liquid towards a further nozzle for cleaning the lower part of said rotating arms when they are in rest position.
  • the machine can thus operate almost uninterruptedly with very rare cleaning interventions by external operators.
  • Figure 1 shows a plan view from top of a polishing machine according to the present invention in the polishing phase
  • Figure 2 shows a plan view from top of a polishing machine according to the present invention in rest position
  • Figure 3 shows a plan view from top of a polishing machine according to the present invention with the heads of the tower between the plates in the cleaning phase.
  • a rotary polishing machine comprises a machine body 1 and a rotating tower 2 ("cross") having four heads 3 that support wafer 4.
  • the tower 2 rotates with predefined pitch between work stations in which the heads 3 are positioned on rotating polishing plates 5 ("platen”) on each of which acts, in the work phase, a rotating cleaning arm 6 (“pad conditioner”) with fixed rotation pin and with rotating end 7 in contact with the above mentioned plates 5.
  • the machine presents three work stations in correspondence with which are the plates 5 and a station for loading/unloading 25 ("chuck/de-chuck") the wafers 4.
  • Blocks 8 for delivering (“delivery") cleaning liquid under pressure are positioned between the plates 5, and each of them has an upper hole 9 connected to a tube 10 that carries the liquid to an internal nozzle 11 and three front holes fitted with nozzles 12- 14, one of which 12 is connected by means of a tube 15 to a peripheral nozzle 16.
  • each plate 5 On the external part of each plate 5, without contact with it, is positioned a service arm 17 ("slurry arm"), supported externally and fitted in the lower part with a nozzle 18 for the issue of a chemical agent that helps the polishing of the wafer, with a hole with nozzle 19 for the issue of DIW liquid under pressure and with a further hole 20 connected by means of a tube 21 to a nozzle 22 for the issue of the DIW liquid for cleaning the lower part of the cleaning arm 6 when the latter is in rest position.
  • slurry arm On the external part of each plate 5, without contact with it, is positioned a service arm 17 (“slurry arm”), supported externally and fitted in the lower part with a nozzle 18 for the issue of a chemical agent that helps the polishing of the wafer, with a hole with nozzle 19 for the issue of DIW liquid under pressure and with a further hole 20 connected by means of a tube 21 to a nozzle 22 for the issue of the DIW liquid for cleaning the lower part of the cleaning arm 6 when the latter is in
  • each wafer 4 comes about in virtue of the simultaneous rotation, in the same direction, of the wafer 4, by means of a mechanism mounted on the head 3, and of the plate 5. In addition the wafer 4 also moves by translational motion in the direction of the radius of the plate 5.
  • the service arm 17 releases a chemical agent through the nozzle 18 that favours polishing.
  • polishing residues are carried away by means of the cleaning arm 6 whose end 7 rotates in the same direction as the wafer 4 and the plate 5
  • the block 8 releases DIW cleaning liquid under pressure through the peripheral nozzle 16 and the nozzle 14 ("global irrigation").
  • the “global irrigation” comes about intermittently according to the settings of the machine by means of an external control unit that is not shown.
  • the "main polish” ends and the high pressure cleaning phase starts (“high pressure rinse") accompanied by the loading/unloading of the wafer 4 placed in correspondence with the station 25.
  • the cleaning liquid comes out under pressure from the nozzle 19, cleaning part of the plate and from the nozzle 22 for cleaning the lower part of the cleaning arm 6.
  • the tower rotates by 45° so that the wafers 4 are positioned between the plates 5 ("interplaten") that is above the blocks 8 ( Figure 3).
  • the cleaning phase starts between the plates ("interplaten cleaning) coming about by means of the delivery of cleaning liquid under pressure through the internal nozzle 11 and the front nozzle 13 of each block 8.
  • the effect is that the internal part of the tower is cleaned efficiently which otherwise through “global irrigation” would be practically not be reachable.
  • the front nozzle 13 also enables the wafer 4 to be partially cleaned, and the area of the pin of the cleaning arm 6 to be partially cleaned, which is particularly subject to scaling.
  • the delivery of the liquid under pressure is regulated by said control unit.
  • precise setting of the cleaning phases is necessary. It is not possible to have "global irrigation” at the same time as “interplaten cleaning” and/or “high pressure rinse”; or “interplaten cleaning” with “high pressure rinse”. If too many nozzles are open the delivery pressure of the cleaning liquid drops and thus the effectiveness of the cleaning. In conclusion, we can say that the machine undergoes three cleaning processes: “main polish”, "high pressure rinse” and "global irrigation”.

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

L'invention concerne une machine rotative multiposte conçue pour polir des plaquettes, qui comprend un corps (1) et une tour rotative (2)constituée de plusieurs têtes (3), chacune portant une plaquette (4). Ladite tour (2) tourne à un pas prédéfini entre un premier poste (25) pour charger/décharger les plaquettes (4) et les postes suivants tous identiques dans lesquels lesdites têtes (3) se positionnent sur des plaques de polissage (5) rotatives sur lesquelles des bras de nettoyage rotatifs agissent en phase de travail avec un axe de rotation et une extrémité rotative (7) en contact avec les plaques (5) susmentionnées. Entre les postes de travail, des zones de lavage intermédiaires des têtes (3) et des plaquettes (4) sont prévues à l'aide de moyens de nettoyage (8, 17) comprenant des blocs de distribution (8) de liquide de lavage placés entre lesdites plaques (5), chacun ayant un orifice supérieur (9) pour la libération d'une buse (11) qui diffuse le liquide sous pression afin de nettoyer une des têtes (3) et la partie inférieure de la tour (2), et un orifice supplémentaire raccordé à une autre buse (13) destinée à nettoyer le corps (1) de la machine et l'axe de rotation d'un des bras de nettoyage (6). Lesdits moyens de nettoyage comprennent également des bras (17) qui distribuent le liquide de lavage placés au-dessus desdites plaques (5) avec un support externe et chacun ayant un orifice inférieur supplémentaire (20) raccordé à un tuyau (21) qui transporte le liquide vers une autre buse (22) en vue de nettoyer la partie inférieure desdits bras rotatifs (6) lorsqu'ils sont au repos.
PCT/EP2005/054568 2004-09-20 2005-09-14 Machine rotative multiposte de polissage de plaquettes de composants electroniques semi-conducteurs WO2006032622A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
ITMI20041788 ITMI20041788A1 (it) 2004-09-20 2004-09-20 "macchina rotativa a piu' stazioni per la levigatura di wafer di componenti elettronici a semiconduttore"
ITMI2004A001788 2004-09-20

Publications (1)

Publication Number Publication Date
WO2006032622A1 true WO2006032622A1 (fr) 2006-03-30

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2005/054568 WO2006032622A1 (fr) 2004-09-20 2005-09-14 Machine rotative multiposte de polissage de plaquettes de composants electroniques semi-conducteurs

Country Status (2)

Country Link
IT (1) ITMI20041788A1 (fr)
WO (1) WO2006032622A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101829931A (zh) * 2010-05-06 2010-09-15 常熟市尚湖镇宏达磁性材料加工厂 一种磨床
FR3010199A1 (fr) * 2013-08-29 2015-03-06 Sebastien Cocheteau Procede de polissage manuel de cadran de montre et autres pieces minces et dispositif de mise en oeuvre
WO2022086672A1 (fr) * 2020-10-21 2022-04-28 Applied Materials, Inc. Application séquentielle de fluides de nettoyage pour maintenance améliorée de systèmes de polissage mécano-chimique

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0787561A1 (fr) * 1996-02-05 1997-08-06 Ebara Corporation Polisseuse
US6053801A (en) * 1999-05-10 2000-04-25 Applied Materials, Inc. Substrate polishing with reduced contamination
US6126517A (en) * 1995-10-27 2000-10-03 Applied Materials, Inc. System for chemical mechanical polishing having multiple polishing stations
WO2003071592A1 (fr) * 2002-02-20 2003-08-28 Ebara Corporation Procede et dispositif de polissage

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6126517A (en) * 1995-10-27 2000-10-03 Applied Materials, Inc. System for chemical mechanical polishing having multiple polishing stations
EP0787561A1 (fr) * 1996-02-05 1997-08-06 Ebara Corporation Polisseuse
US6053801A (en) * 1999-05-10 2000-04-25 Applied Materials, Inc. Substrate polishing with reduced contamination
WO2003071592A1 (fr) * 2002-02-20 2003-08-28 Ebara Corporation Procede et dispositif de polissage

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101829931A (zh) * 2010-05-06 2010-09-15 常熟市尚湖镇宏达磁性材料加工厂 一种磨床
CN101829931B (zh) * 2010-05-06 2012-07-25 常熟市尚湖镇宏达磁性材料加工厂 一种磨床
FR3010199A1 (fr) * 2013-08-29 2015-03-06 Sebastien Cocheteau Procede de polissage manuel de cadran de montre et autres pieces minces et dispositif de mise en oeuvre
WO2022086672A1 (fr) * 2020-10-21 2022-04-28 Applied Materials, Inc. Application séquentielle de fluides de nettoyage pour maintenance améliorée de systèmes de polissage mécano-chimique
US11850700B2 (en) 2020-10-21 2023-12-26 Applied Materials, Inc. Sequential application of cleaning fluids for improved maintenance of chemical mechanical polishing systems

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Publication number Publication date
ITMI20041788A1 (it) 2004-12-20

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