WO2006025279A1

WO2006025279A1 - Wafer inspection-use anisotropic conductive connector and production method and applications therefor

Info

Publication number: WO2006025279A1
Application number: PCT/JP2005/015539
Authority: WO
Inventors: Kiyoshi Kimura; Fujio Hara
Original assignee: Jsr Corporation
Priority date: 2004-08-31
Filing date: 2005-08-26
Publication date: 2006-03-09
Also published as: KR20070046033A; TW200625724A; CN1989606A

Abstract

A wafer inspection-use anisotropic conductive connector capable of positively ensuring a required electrical connection even if the electrodes to be inspected of the wafer are disposed at small pitches and high density, and being produced at low costs, and a production method and applications therefore. The connector comprises a frame plate formed with a plurality of openings corresponding to electrode areas where the electrodes to be inspected of the wafer are disposed, and a plurality of elastic, anisotropic conductive films so disposed as to close the respective openings, wherein the elastic, anisotropic conductive films comprise a plurality of connecting conductive units disposed in conjunction with the electrodes to be inspected, extending in the thickness direction, and being mutually insulated by insulating units, and can be obtained by laser-processing a conductive elastomer layer supported on a releasing type support plate to form a plurality of connecting conductive units, allowing the respective connecting conductive units to impregnate into a liquid insulating unit-use material layer formed so as to close the openings of the frame plate, and hardening the insulating unit-use material layer.

Description

Specification

Anisotropic conductive connector for wafer inspection, its manufacturing method and application

Technical field

The present invention relates to an anisotropic conductive connector for wafer inspection used for performing electrical inspection of a plurality of integrated circuits formed on a wafer in a wafer state, a method for manufacturing the same, and an anisotropic conductive for wafer inspection. BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer inspection probe member provided with a conductive connector, a wafer inspection apparatus including the probe member, and a wafer inspection method using the probe member.

Background art

In general, in the manufacturing process of a semiconductor integrated circuit device, a large number of integrated circuits are formed on a wafer made of, for example, silicon, and then basic electrical characteristics of each of these integrated circuits are inspected. Thus, a probe test for selecting defective integrated circuits is performed. Next, the semiconductor chip is formed by cutting the wafer, and the semiconductor chip is housed in an appropriate package and sealed. Further, each packaged semiconductor integrated circuit device is subjected to a burn-in test for selecting a semiconductor integrated circuit device having a potential defect by examining electrical characteristics in a high temperature environment.

In such an electrical inspection of an integrated circuit such as a probe test or a burn-in test, a probe member is used to electrically connect each of the electrodes to be inspected in the inspection object to a tester. Such a probe member includes an inspection circuit board on which an inspection electrode is formed according to a pattern corresponding to the pattern of the electrode to be inspected, and an anisotropic conductive elastomer sheet disposed on the inspection circuit board. Things are known.

[0003] As a powerful anisotropic conductive elastomer sheet, there are conventionally known various structures. For example, Patent Document 1 and the like are obtained by uniformly dispersing metal particles in an elastomer. An anisotropic conductive elastomer sheet (hereinafter referred to as “dispersed anisotropic conductive elastomer sheet”). It is called. In addition, Patent Document 2 and the like disclose a large number of conductive parts extending in the thickness direction by distributing the conductive magnetic particles non-uniformly in the elastomer and insulation that insulates them from each other. An anisotropic conductive elastomer sheet (hereinafter, referred to as an “unevenly anisotropic conductive elastomer sheet”) is disclosed, and Patent Document 3 and the like further describe the surface of the conductive part. An unevenly distributed anisotropic conductive elastomer sheet in which a step is formed between the insulating portion and the insulating portion is disclosed.

Among these anisotropically conductive elastomer sheets, the unevenly distributed anisotropically conductive elastomer sheet has a conductive portion formed according to a pattern corresponding to the pattern of the electrode to be inspected of the integrated circuit to be inspected. More reliable electrical connection between electrodes compared to distributed anisotropic conductive elastomer sheet, even for integrated circuits where the arrangement pitch of the electrodes to be inspected, that is, the distance between the centers of adjacent electrodes to be inspected is small Is advantageous in that it can be achieved with Therefore, an unevenly distributed anisotropic conductive elastomer sheet is used in a probe test or burn-in test of a semiconductor integrated circuit device in which the pitch of electrodes to be inspected is small.

Thus, in a probe test performed on an integrated circuit formed on a wafer, conventionally, a wafer is divided into a plurality of areas in which, for example, 16 or 32 integrated circuits are formed among many integrated circuits. A method is adopted in which a probe test is collectively performed on all integrated circuits formed in this area, and a probe test is sequentially performed on integrated circuits formed in other areas. In recent years, in order to improve the inspection efficiency and reduce the inspection cost, for example, 64 or 124 of all the integrated circuits formed on the wafer, or all of the integrated circuits are collectively subjected to the probe test. It is requested to do.

On the other hand, in the burn-in test, the integrated circuit device to be inspected is very small and inconvenient to handle, so in order to perform electrical inspection of many integrated circuit devices individually, It takes a long time, which makes the inspection costs considerably higher. For this reason, a WLBI (Wafer Level Burn-in) test has been proposed in which a burn-in test is performed on a large number of integrated circuits formed on a wafer in a batch. However, if the Ueno to be inspected is a large one having a diameter of, for example, 8 inches or more and the number of electrodes to be inspected is, for example, 5000 or more, particularly 10,000 or more, Since the pitch of the electrodes to be inspected in the integrated circuit is extremely small, there are the following problems when using an unevenly distributed anisotropic conductive elastomer sheet in the probe test or WLBI test.

(1) In order to inspect a wafer with a diameter of, for example, 8 inches (about 20 cm), it is necessary to use an unevenly distributed anisotropically conductive elastomer sheet having a diameter of about 8 inches. However, such an unevenly distributed anisotropic conductive elastomer sheet has a considerably large overall area, but each conductive part is fine and the conductive part occupying the surface of the unevenly distributed anisotropic conductive elastomer sheet. Since the surface area ratio is small, it is extremely difficult to reliably manufacture the unevenly anisotropic anisotropic conductive elastomer sheet. Therefore, in the production of the anisotropic conductive elastomer sheet, the yield is drastically reduced, resulting in an increase in the production cost of the anisotropic conductive elastomer sheet, which in turn increases the inspection cost.

(2) To an unevenly distributed anisotropically conductive elastomer sheet! In the electrical connection work between the inspection circuit board and the wafer to be inspected, it is held and fixed with a specific positional relationship to them. It is necessary. However, anisotropically conductive elastomer sheets are flexible and easily deformable and have low handling properties. Therefore, when an electrical connection is made to an inspection target electrode of a wafer to be inspected. In addition, it is extremely difficult to align and hold and fix the unevenly distributed anisotropic conductive elastomer sheet.

(3) the linear thermal expansion coefficient of the material for example silicon constituting the wafer 3. is about 3 X 10- ⁶ ΖΚ, whereas linear thermal expansion coefficient of the material such as silicone rubber constituting the anisotropically conductive elastomer one sheet 2. is about 2 Χ 10- ⁴ ΖΚ. Thus, for example, at 25 ° C, if each wafer and anisotropic conductive elastomer sheet with a diameter of 20cm are heated to 25 ° C force up to 125 ° C, the change in wafer diameter is theoretically Although the diameter is only 0066 cm, the change in diameter of the anisotropically conductive elastomer sheet reaches 0.44 cm. in this way

Because the coefficient of thermal expansion differs greatly between the material constituting the integrated circuit device to be inspected (for example, silicon) and the material constituting the unevenly anisotropic conductive elastomer sheet (for example, silicone rubber), the burn-in test In and Even when the required alignment and holding / fixing with the laster sheet is realized, if the thermal history due to the temperature change is received, the conductive portion of the unevenly anisotropic conductive elastomer sheet and the integrated circuit device are inspected. As a result of positional displacement with the electrode, it is difficult to maintain a stable connection state by changing the electrical connection state.

[0006] In order to solve the above problem, a frame plate in which a plurality of openings are formed corresponding to an electrode region in which an inspection target electrode of an integrated circuit in a wafer to be inspected is formed, and the frame plate An anisotropic conductive connector comprising a plurality of elastic anisotropic conductive films arranged so as to close each of the openings has been proposed (for example, see Patent Document 4).

According to such an anisotropic conductive connector, the following effects can be obtained.

(1) Each of the openings formed in the frame plate has a size corresponding to the electrode region of the integrated circuit in the wafer to be inspected. Therefore, the anisotropic anisotropic conductive film disposed in each of the openings is Since a small size is sufficient, it is easy to form individual elastic anisotropic conductive films.

(2) Since each of the elastic anisotropic conductive films is supported by the frame plate, it can be easily handled by being deformed, and it can be integrated by forming positioning marks (for example, holes) in the frame plate in advance. In the electrical connection work of the circuit device, it is possible to easily align and hold and fix the integrated circuit device.

(3) Since the elastic anisotropic conductive film with a small size has a small absolute amount of thermal expansion even when it receives a thermal history, the thermal expansion of the elastic anisotropic conductive film is regulated by the frame plate, and the anisotropic conductive film The thermal expansion of the entire connector depends on the thermal expansion of the material that makes up the frame plate, so if you use a material with a low coefficient of thermal expansion as the material that makes up the frame plate, In addition, as a result of preventing the displacement between the conductive portion of the anisotropic conductive connector and the electrode to be inspected on the wafer, a favorable electrical connection state is stably maintained.

[0007] Such an anisotropic conductive connector 1 is manufactured as follows.

A mold for forming an elastic anisotropic conductive film comprising an upper mold 80 and a lower mold 85 as a pair as shown in FIG. 28 is prepared. Each of the upper mold 80 and the lower mold 85 in this mold corresponds to the pattern of the conductive portion of the anisotropic conductive elastomer sheet to be molded on the substrates 81 and 86. A plurality of ferromagnetic layers 82 and 87 arranged according to a pattern, and nonmagnetic layers 83 and 88 arranged at locations other than the locations where these ferromagnetic layers 82 and 87 are formed. In addition, a molding surface is formed by the ferromagnetic layers 82 and 87 and the nonmagnetic layers 83 and 88. The upper mold 80 and the lower mold 85 are arranged so that the ferromagnetic layer 82 of the upper mold 80 and the corresponding ferromagnetic layer 87 of the lower mold 85 face each other.

In such a mold, as shown in FIG. 29, a frame plate 90 in which an opening 91 is formed corresponding to the electrode region in the wafer to be inspected is aligned and disposed, and elasticized by a hardening process. A molding material layer 95A in which conductive particles P exhibiting magnetism are dispersed in a polymer substance-forming material to be a polymer substance is formed so as to close each opening 91 of the frame plate 90. Here, the conductive particles P contained in the molding material layer 95A are in a state of being dispersed in the molding material layer 95A.

[0008] Then, for example, a pair of electromagnets are arranged on the upper surface of the upper die 80 and the lower surface of the lower die 85 to operate them, whereby the ferromagnetic material layer 82 of the upper die 80 is formed on the molding material layer 95A. And the magnetic layer 87 of the lower mold 85 corresponding thereto, that is, the portion that becomes the conductive portion, a magnetic field that is larger and stronger than the other portions is applied in the thickness direction of the molding material layer 95A. The As a result, the conductive particles P dispersed in the molding material layer 95A correspond to the portion of the molding material layer 95A where a high-intensity magnetic field is applied, that is, the ferromagnetic layer 82 of the upper mold 80. The lower mold 85 is gathered at a portion between the lower layer 85 and the ferromagnetic layer 87, and is further aligned in the thickness direction of the molding material layer 95A. In this state, by performing the curing treatment of the molding material layer 95A, as shown in FIG. 30, a plurality of conductive portions 96 contained in a state in which the conductive particles P are aligned in the thickness direction, An elastic anisotropic conductive film 95 comprising an insulating portion 97 and insulating portions 97 that insulate these conductive portions 96 from each other is molded in a state in which the peripheral portion thereof is supported by the opening edge portion of the frame plate 90. Connectors are manufactured

However, such a manufacturing method has the following problems.

When electrical inspection is performed on a wafer in which the electrodes to be inspected are arranged at a high density with a small pitch, use anisotropic conductive connectors with a small pitch of the conductive parts and a high density. is required. Thus, in the manufacture of such anisotropically conductive connectors Of course, it is necessary to use the upper die 80 and the lower die 85 in which the ferromagnetic layers 82 and 87 are arranged at a very small pitch.

However, when such an upper die 80 and lower die 85 are used to form the elastic anisotropic conductive film 95 as described above, in each of the upper die 80 and the lower die 85, ferromagnetic materials adjacent to each other are formed. Since the separation distance between the layers 82 and 87 is small, as shown in FIG. 31, there is a direction force from one ferromagnetic layer 82a in the upper mold 80 to the corresponding ferromagnetic layer 87a in the lower mold 85. In addition to the direction (indicated by the arrow X), for example, from the upper layer 80 of the ferromagnetic layer 82a to the corresponding lower layer 85 of the ferromagnetic layer 87a, the ferromagnetic layer 87b is directed in the direction ( (Indicated by arrow Y), or a magnetic field also acts in the direction of the direction of force from the ferromagnetic layer 82b of the upper mold 80 to the ferromagnetic layer 87a adjacent to the corresponding ferromagnetic layer 87b of the lower mold 85. Become. Therefore, in the molding material layer 95A, the conductive particles P can be gathered in a portion located between the ferromagnetic layer 82a of the upper die 80 and the corresponding ferromagnetic layer 87a of the lower die 85. It becomes difficult, and the conductive particles P also gather at the portion located between the ferromagnetic layer 82a of the upper mold 80 and the ferromagnetic layer 87b of the lower mold 85, and the conductive particles P are formed. It becomes difficult to sufficiently orient the material layer 95A in the thickness direction, and as a result, an anisotropic conductive connector having a desired conductive portion and insulating portion cannot be obtained.

Further, in forming the elastic anisotropic conductive film, a special mold including the upper mold 80 and the lower mold 85 is necessary as described above. This mold is manufactured individually according to the wafer to be inspected, and the manufacturing process is complicated, so the manufacturing cost of the anisotropic conductive connector becomes extremely high. As a result, wafer inspection costs increase.

Patent Document 1: Japanese Patent Application Laid-Open No. 51-93393

Patent Document 2: Japanese Patent Laid-Open No. 53-147772

Patent Document 3: Japanese Patent Application Laid-Open No. 61-250906

Patent Document 4: Japanese Patent Laid-Open No. 2002-334732

Disclosure of the invention

[0011] The present invention has been made based on the above situation, and the first object of the present invention is that the electrode force to be inspected in the wafer to be inspected is arranged at a high density with a small pitch. The anisotropic conductive connector for wafer inspection, which can reliably achieve the required electrical connection for the wafer, and can be manufactured at low cost, and a method for manufacturing the same There is to do.

The second object of the present invention is to reliably achieve the required electrical connection for the wafer even if the electrodes to be inspected on the wafer to be inspected are arranged with high density with small pitches. It is another object of the present invention to provide a probe member for wafer inspection that can be manufactured at a low cost.

A third object of the present invention is to provide a wafer inspection apparatus and wafer inspection method for performing electrical inspection of a plurality of integrated circuits formed on a wafer in the state of a wafer using the probe member. .

[0012] A method for manufacturing an anisotropic conductive connector for wafer inspection according to the present invention is provided in an electrode region in which electrodes to be inspected in all or some integrated circuits formed on a wafer to be inspected are arranged. Correspondingly, a frame plate having a plurality of openings formed therein and a plurality of elastic anisotropic conductive films arranged so as to close each of the openings of the frame plate, each of the elastic anisotropic conductive films being A plurality of conductive parts for connection extending in the thickness direction, which are arranged corresponding to the electrodes to be inspected in the integrated circuit formed on the substrate, and are formed of elastic particles containing conductive particles exhibiting magnetism, and A method for manufacturing an anisotropic conductive connector for wafer inspection comprising an insulating portion made of an elastic polymer material that insulates the connecting conductive portions from each other,

A plurality of connections can be made on the releasable support plate by laser processing a conductive elastomer layer in which conductive particles exhibiting magnetism are contained in an elastic polymer material supported on the releasable support plate. Forming a conductive part for

For each of the connecting conductive portions formed on the releasable support plate, the insulating portion made of a liquid polymer material forming material that is cured to become an elastic polymer material is formed so as to close the opening of the frame plate. It has the process of forming an insulating part by making it infiltrate into a material layer and carrying out the hardening process of the said insulating part material layer in this state.

In the method for producing an anisotropic conductive connector for wafer inspection according to the present invention, the laser treatment is preferably performed by a carbon dioxide laser or an ultraviolet laser. In addition, a metal mask is formed on the surface of the conductive elastomer layer according to the pattern of the conductive part for connection to be formed, and then the conductive elastomer layer is laser processed to form a plurality of conductive parts for connection. It is preferable to form.

Further, it is preferable to form a metal mask by subjecting the surface of the conductive elastomer layer to a plating treatment.

In addition, a thin metal layer is formed on the surface of the conductive elastomer layer, a resist layer having an opening formed in accordance with a specific pattern is formed on the surface of the thin metal layer, and the resist layer in the thin metal layer is formed. Opening force It is preferable that the metal mask is formed by subjecting the surface of the exposed part to a plating treatment.

In the method for producing an anisotropic conductive connector for wafer inspection according to the present invention, a conductive elastomer containing magnetic particles in a liquid elastomer material that is cured to become an elastic polymer substance. A conductive elastomer layer can be formed by applying a magnetic field to the single material layer in the thickness direction and curing the conductive elastomer single material layer.

In the method for manufacturing an anisotropic conductive connector for wafer inspection according to the present invention, it is preferable to use a frame plate having a coefficient of linear thermal expansion of 3 × ι− ^5— κ or less.

[0014] An anisotropic conductive connector for wafer inspection according to the present invention is obtained by the manufacturing method described above.

[0015] The probe member of the present invention is a probe member used for performing an electrical inspection of the integrated circuit in a wafer state for each of the plurality of integrated circuits formed on the wafer,

An inspection circuit board having inspection electrodes formed on the surface according to a pattern corresponding to the pattern of the electrode to be inspected in the integrated circuit formed on the wafer to be inspected, and the above-mentioned circuit board disposed on the surface of the inspection circuit board And an anisotropic conductive connector for wafer inspection.

[0016] In the probe member of the present invention, an insulating sheet and an insulating sheet extend through the thickness direction on the anisotropic conductive connector for wafer inspection, and the pattern of the electrode to be inspected. A sheet-like profile consisting of a plurality of electrode structures arranged according to the corresponding pattern A robe is placed, okay! /.

[0017] A wafer inspection apparatus according to the present invention includes the above-described probe member in a wafer inspection apparatus that performs an electrical inspection of each of the plurality of integrated circuits formed on the wafer in a wafer state. Thus, the electrical connection to the integrated circuit formed on the wafer to be inspected is achieved through the probe member.

[0018] In the wafer inspection method of the present invention, each of the plurality of integrated circuits formed on the wafer is electrically connected to the tester via the probe member, and the electrical circuit of the integrated circuit formed on the wafer is electrically connected. It is characterized by performing an inspection.

[0019] According to the method for manufacturing an anisotropic conductive connector for wafer inspection according to the present invention, the conductive elastomer layer is laser-processed to form the conductive portion for connection, and thus has the desired conductivity. The connecting lead can be obtained with certainty. In addition, after forming a conductive part for connection on the releasable support plate, the conductive part for connection is infiltrated into the material layer for insulating part, and the insulating part material layer is cured to cure the insulating part. Therefore, it is possible to reliably obtain an insulating portion in which no conductive particles are present. In addition, it is not necessary to use a special mold in which a large number of ferromagnetic layers used to manufacture a conventional anisotropic conductive connector are arranged.

Therefore, according to the anisotropic conductive connector for wafer inspection of the present invention obtained by such a method, even if the pitch of the electrode to be inspected in the wafer to be inspected is small, the pitch is arranged with high density. The required electrical connection can be reliably achieved for each of the electrodes to be inspected, and the force can be manufactured at a low cost.

[0020] According to the probe member of the present invention, since the anisotropic conductive connector for wafer inspection is provided, the electrode force to be inspected on the wafer to be inspected is arranged at a high density with a small pitch. Even so, the required electrical connection can be reliably achieved for the wafer, and the force can be manufactured at low cost.

[0021] According to the wafer inspection apparatus and the wafer inspection method of the present invention, since the probe member described above is used, the electrode force to be inspected on the wafer to be inspected is arranged with a small pitch and high density. However, the required electrical inspection can be reliably performed on the wafer. Brief Description of Drawings

FIG. 1 is a plan view showing an example of an anisotropic conductive connector according to the present invention.

FIG. 2 is an enlarged plan view showing a part of the anisotropic conductive connector shown in FIG.

FIG. 3 is an enlarged plan view showing an elastic anisotropic conductive film in the anisotropic conductive connector shown in FIG. 1.

4 is a cross-sectional view illustrating an enlarged elastic anisotropic conductive film in the anisotropic conductive connector shown in FIG. 1. FIG.

FIG. 5 is an explanatory cross-sectional view showing a state in which a conductive elastomer material layer is formed on a releasable support plate.

FIG. 6 is an explanatory cross-sectional view showing an enlarged conductive elastomer material layer.

FIG. 7 is an explanatory sectional view showing a state in which a magnetic field is applied to the conductive elastomer material layer in the thickness direction.

FIG. 8 is an explanatory sectional view showing a state in which a conductive elastomer layer is formed on a releasable support plate.

FIG. 9 is an explanatory sectional view showing a state in which a thin metal layer is formed on one conductive elastomer layer.

FIG. 10 is an explanatory cross-sectional view showing a state in which a resist layer having an opening is formed on a thin metal layer.

FIG. 11 is an explanatory sectional view showing a state in which a metal mask is formed in the opening of the resist layer.

FIG. 12 is an explanatory cross-sectional view showing a state in which a plurality of connecting conductive portions are formed according to a specific pattern on a releasable support.

FIG. 13 is an explanatory sectional view showing a state in which a frame plate is disposed on a releasable support and an insulating material layer is formed.

FIG. 14 is an explanatory cross-sectional view showing a state in which a releasable support plate on which a conductive part for connection is formed is superimposed on a releasable support plate on which an insulating material layer is formed.

FIG. 15 is an explanatory cross-sectional view showing a state in which an integral insulating portion is formed around the conductive portion for connection. FIG. 16 is a cross-sectional view illustrating the configuration of an example of a wafer inspection apparatus using an anisotropic conductive connector according to the present invention.

FIG. 17 is a cross-sectional view illustrating the configuration of the main part of an example of the probe member according to the present invention.

[18] FIG. 18 is an explanatory cross-sectional view showing a configuration in another example of a wafer inspection apparatus using the anisotropic conductive connector according to the present invention.

FIG. 19 is an enlarged plan view showing an elastic anisotropic conductive film in another example of the anisotropic conductive connector according to the present invention.

FIG. 20 is an enlarged plan view showing an elastic anisotropic conductive film in still another example of the anisotropic conductive connector according to the present invention.

FIG. 21 is an explanatory view showing a state in which a connecting conductive portion is formed by removing only a peripheral portion of a conductive elastomer layer in a portion that becomes a connecting conductive portion.

FIG. 22 is an explanatory cross-sectional view showing a state in which the conductive portion for connection is formed by removing only the peripheral portion of the conductive elastomer layer in the conductive elastomer layer.

FIG. 23 is a top view of a test wafer used in Examples.

24] An explanatory diagram showing the positions of the electrode regions to be inspected of the integrated circuit formed on the test wafer shown in FIG.

FIG. 25 is an explanatory diagram showing an inspected electrode of the integrated circuit formed on the test wafer shown in FIG. 23.

FIG. 26 is a top view of the frame plate produced in the example.

FIG. 27 is an explanatory view showing a part of the frame plate shown in FIG. 26 in an enlarged manner.

[28] FIG. 28 is an explanatory sectional view showing a configuration of a mold for manufacturing a conventional anisotropically conductive connector.

FIG. 29 is an explanatory cross-sectional view showing a state in which a frame plate is arranged in a mold and a molding material layer is formed in a process for manufacturing a conventional anisotropic conductive connector.圆 30] is a sectional view for explanation showing a state in which a magnetic field is applied in the thickness direction of the molding material layer. 圆 31] In the conventional method for manufacturing an anisotropic conductive connector, the molding material layer is acted on. It is sectional drawing for description which shows the direction of a magnetic field.

1 Probe member 2 Anisotropic conductive connector

3 Pressure plate 4 Wafer mounting table

5 Heater 6 Ueno coffee

7 Electrode to be inspected 10 Frame plate

11 opening

13 Positioning hole

16, 16A releasable support plate

17 Thin metal layer 18 Resist layer

18a opening 19 metal mask

20 Elastic anisotropic conductive film

21 Conductive part for connection

21A Material layer for conductive elastomer

21B conductive elastomer layer

22 Insulation part

22A Material layer for insulation 23 Projection

26 Non-connection conductive part 27 Protruding part

30 Circuit board for inspection 31 Inspection electrode

41 Insulating sheet 40 Sheet pro

42 Electrode structure 43 Surface electrode part

44 Back electrode 45 Short circuit

50 chamber 51 exhaust pipe

55 O-ring

80 Upper 81 substrate

82, 82a, 82b ferromagnetic layer

83 Non-magnetic layer

85 Lower mold 86 Substrate 87 87a, 87b Ferromagnetic layer

88 Non-magnetic layer

90 Frame plate 91 Opening

95 Elastic anisotropic conductive film 95A Molding material layer

96 Conductive part 97 Insulating part

P conductive particles

BEST MODE FOR CARRYING OUT THE INVENTION

[0024] Hereinafter, embodiments for carrying out the present invention will be described in detail.

[Anisotropic conductive connector]

FIG. 1 is a plan view showing an example of an anisotropic conductive connector for wafer inspection according to the present invention, FIG. 2 is an enlarged plan view showing a part of the anisotropic conductive connector shown in FIG. 1, and FIG. FIG. 4 is an enlarged plan view showing the elastic anisotropic conductive film in the anisotropic conductive connector shown in FIG. 1, and FIG. 4 is an enlarged view showing the elastic anisotropic conductive film in the anisotropic conductive connector shown in FIG. FIG.

[0025] The anisotropic conductive connector for wafer inspection shown in FIG. 1 (hereinafter also simply referred to as "anisotropic conductive connector 1") is, for example, each of the integrated circuits for a wafer on which a plurality of integrated circuits are formed. As shown in FIG. 2, it has a frame plate 10 in which a plurality of openings 11 (shown by broken lines) are formed. The opening 11 of the frame plate 10 is formed so as to correspond to the electrode region where the electrodes to be inspected are arranged in all the integrated circuits formed on the wafer to be inspected. On the frame plate 10, a plurality of elastic anisotropic conductive films 20 having conductivity in the thickness direction are arranged so as to close one opening 11 and supported by the opening edge. Further, in the frame plate 10 in this example, when a pressure reducing means is used in a wafer inspection apparatus to be described later, air between the anisotropic conductive connector and a member adjacent to the anisotropic conductive connector is discharged. An air circulation hole 12 for circulation is formed, and a positioning hole 13 for positioning the wafer to be inspected and the circuit board for inspection is further formed.

[0026] The elastic anisotropic conductive film 20 is made of an elastic polymer material, and is disposed so as to be positioned in the opening 11 of the frame plate 10 as shown in FIG. A plurality of connecting conductive portions 21 extending in a direction perpendicular to the surface) and insulating portions 22 formed around each of the connecting conductive portions 21 and insulating each of the connecting conductive portions 21 from each other. It is configured. Each of the connecting conductive portions 21 is arranged according to a pattern corresponding to the pattern of the electrode to be inspected in the integrated circuit formed on the wafer to be inspected, and is electrically connected to the electrode to be inspected in the inspection of the wafer. As shown in FIG. 4, the conductive conductive part 21 for magnetism in the elastic anisotropic conductive film 20 is densely contained in a state of being oriented so as to be aligned in the thickness direction. . On the other hand, the insulating part 22 does not contain the conductive particles P at all.

Further, in the illustrated example, each of the connecting conductive portions 21 is formed so that one surface force of the insulating portion 22 protrudes, and thus, one surface of the elastic anisotropic conductive film 20 protrudes according to the connecting conductive portion 21. Part 23 is formed.

[0027] The thickness of the frame plate 10 is preferably a force of 25 to 600 µm, and more preferably 40 to 400 µm, depending on the material.

If this thickness is less than 25 m, the strength required when using anisotropically conductive connectors will not be obtained, and the durability will be low. As a result, the anisotropically conductive connector cannot be handled with sufficient rigidity. On the other hand, when the thickness exceeds 600 m, the anisotropic anisotropic conductive film 20 formed in the opening 11 becomes excessively thick, and good conductivity in the connecting conductive part 21 can be obtained. May be difficult.

The shape and size in the plane direction at the opening 11 of the frame plate 10 are designed according to the size, pitch, and pattern of the inspected electrode of the wafer to be inspected.

[0028] The material constituting the frame plate 10 is not particularly limited as long as the frame plate 10 is not easily deformed and has a rigidity that allows its shape to be stably maintained. For example, Various materials such as a metal material, a ceramic material, and a resin material can be used. When the frame plate 10 is made of, for example, a metal material, an insulating film is formed on the surface of the frame plate 10; Anyway.

Specific examples of the metal material constituting the frame plate 10 include iron, copper, nickel, chrome, Examples include metals such as Nord, magnesium, manganese, molybdenum, indium, lead, palladium, titanium, tandastene, aluminum, gold, platinum, silver, and alloys or alloy steels in which two or more of these are combined.

Specific examples of the resin material constituting the frame plate 10 include liquid crystal polymer and polyimide resin.

[0029] In the case of using the anisotropically conductive connector WLBI test, as the material for forming the frame plate 10, preferably be linear thermal expansion coefficient used the following 3 X 10- ⁵ Ζκ instrument more preferably ^{- 1 X 10- 7 ~1 X 10} "5 / Κ, particularly preferably Ru ^{^{1 X 10- 6 ~8 X 10- 6}} Ζκ der.

Specific examples of such materials include Invar type alloys such as Invar, Elinvar type alloys such as Elinvar, magnetic metal alloys such as Super Invar, Kovar, and 42 alloy, or alloy steel.

[0030] The total thickness of the elastic anisotropic conductive film 20 (thickness in the connecting conductive portion 21 in the illustrated example) is preferably 50 to 2000 μm, more preferably 70 to: LOOO μm, particularly preferably. Is 80-500 / ζ πι. If this thickness is 50 m or more, the anisotropic anisotropic conductive film 20 having sufficient strength can be obtained reliably. On the other hand, if the thickness is 2000 m or less, the connecting conductive portion 21 having the required conductivity characteristics can be obtained with certainty.

The total projecting height of the projecting portions 23 is preferably 20% or more, more preferably 10% or more of the total thickness of the projecting portions 23. By forming the protruding portion 23 having such a protruding height, the connecting conductive portion 21 is sufficiently compressed with a small applied pressure, so that good conductivity can be reliably obtained.

Further, the protrusion height of the protrusion 23 is preferably 100% or less of the shortest width or diameter of the protrusion 23, more preferably 70% or less. By forming the protruding portion 23 having such a protruding height, the projecting portion 23 is not buckled when pressed, so that the desired conductivity can be obtained with certainty.

[0031] As the elastic polymer material forming the elastic anisotropic conductive film 20, a heat-resistant polymer material having a crosslinked structure is preferred. Various materials can be used as the curable polymer material-forming material that can be used to obtain a strong crosslinked polymer material. Ricorn rubber is preferred.

The liquid silicone rubber may be an addition type or a condensation type, but an addition type liquid silicone rubber is preferred. This addition-type liquid silicone rubber is cured by the reaction between the bur group and the Si H bond, and is a one-pack type (one-component type) made of polysiloxane containing both vinyl groups and Si—H bonds. There are two-component type (two-component type) which also has polysiloxane power containing a butyl group and polysiloxane power containing Si—H bond. It is preferable to use silicone rubber.

[0032] It is preferable to use an addition-type liquid silicone rubber having a viscosity at 23 ° C of 100 to 1,250 Pa-s, more preferably 150 to 800 Pa's, particularly preferably 250 to 500 Pa '. s thing. When this viscosity is less than lOOPa's, in the molding material for obtaining the elastic anisotropic conductive film 20 described later, sedimentation of the conductive particles in the addition-type liquid silicone rubber occurs immediately and good storage stability. In addition, when a parallel magnetic field is applied to the forming material layer, the conductive particles are not aligned so as to be aligned in the thickness direction, and it is difficult to form a chain of conductive particles in a uniform state. It may become. On the other hand, if this viscosity exceeds 1,250 Pa's, the resulting molding material has a high viscosity, which may make it difficult to form a molding material layer in the mold. Even when a parallel magnetic field is applied to the molding material layer, the conductive particles do not move sufficiently, and it may be difficult to orient the conductive particles so that they are aligned in the thickness direction.

The viscosity of such an addition type liquid silicone rubber can be measured with a B-type viscometer.

[0033] When the elastic anisotropic conductive film 20 is formed from a cured liquid silicone rubber (hereinafter referred to as "silicone rubber cured product"), the cured silicone rubber has a compression set at 150 ° C. It is preferably 10% or less, more preferably 8% or less, and further preferably 6% or less. If this compression set exceeds 10%, when the anisotropically conductive connector obtained is repeatedly used many times or repeatedly in a high temperature environment, the connection conductive part 21 is permanently set. As a result, the chain of conductive particles in the connecting conductive part 21 is disturbed. It becomes difficult to maintain the necessary conductivity.

Here, the compression set of the cured silicone rubber can be determined by a method according to JIS K 6249.

[0034] Further, the cured silicone rubber forming the elastic anisotropic conductive film 20 preferably has a durometer A hardness of 10 to 60 at 23 ° C, more preferably 15 to 60, particularly Preferably it is 20-60. If the durometer A hardness is less than 10, the insulation 22 that insulates the connection conductive parts 21 from each other when pressed is excessively distorted or immediately has the required insulation between the connection conductive parts 21. May be difficult to maintain. On the other hand, if the durometer A hardness exceeds 60, a pressing force with a considerably large load is required to give an appropriate distortion to the conductive part 21 for connection. For example, the wafer to be inspected is greatly deformed. Or breakage easily occurs.

In addition, when a silicone rubber cured product having a durometer A hardness outside the above range is used, if the anisotropically conductive connector obtained is repeatedly used many times, the connecting conductive portion 21 is permanently strained. As soon as it occurs, this results in disturbance of the chain of conductive particles in the connecting conductive portion 21, and it becomes difficult to maintain the required conductivity. Furthermore, when the anisotropic conductive connector is used in a test under a high temperature environment, for example, a W LBI test, the cured silicone rubber forming the elastic anisotropic conductive film 20 has a durometer A hardness of 25 to 40 at 23 ° C. It is preferable that. If a cured silicone rubber with a durometer A hardness outside the above range is used, the anisotropic conductive connector obtained will be permanently strained in the conductive part for connection 21 when repeatedly used in tests at high temperatures. As a result, the chain of conductive particles in the connection conductive portion 21 is disturbed, and it becomes difficult to maintain the required conductivity.

Here, the durometer A hardness of the cured silicone rubber can be measured by a method based on JIS K 6249.

[0035] Further, the cured silicone rubber forming the elastic anisotropic conductive film 20 preferably has a tear strength at 23 ° C of 8 kNZm or more, more preferably lOkNZ m or more, more preferably 15 kNZm. Above, particularly preferably 20 kNZm or more . If the tear strength is less than 8 kNZm, the durability tends to decrease when the elastic anisotropic conductive film 20 is excessively strained.

Here, the tear strength of the cured silicone rubber can be determined by a method based on JIS K 6249.

[0036] As the addition type liquid silicone rubber having such characteristics, liquid silicone rubbers "KE2000" series and "KE1950" series manufactured by Shin-Etsu Chemical Co., Ltd. are commercially available! Can do.

In the present invention, an appropriate curing catalyst can be used for curing the addition type liquid silicone rubber. As such a curing catalyst, a platinum-based catalyst can be used. Specific examples thereof include chloroplatinic acid and a salt thereof, a platinum-unsaturated group-containing siloxane complex, a complex of bursiloxane and platinum, Known complexes such as a complex of platinum and 1,3-dibule tetramethyldisiloxane, a triorganophosphine, a complex of phosphite and platinum, a acetyl acetate platinum chelate, a complex of cyclic gen and platinum, etc. .

The amount of the curing catalyst used is appropriately selected in consideration of the type of curing catalyst and other curing conditions, but is usually 3 to 15 parts by weight with respect to 100 parts by weight of the addition type liquid silicone rubber.

[0038] Further, in the addition-type liquid silicone rubber, a thixotropic improvement of the addition-type liquid silicone rubber, viscosity adjustment, improvement of dispersion stability of the conductive particles, or a base material having high strength is obtained. For this purpose, an inorganic filler such as normal silica powder, colloidal silica, air-mouthed gel silica, alumina, or the like can be contained as necessary.

The amount of such an inorganic filler used is not particularly limited, but if used in a large amount, the orientation of the conductive particles by a magnetic field cannot be sufficiently achieved, which is not preferable.

[0039] The conductive particles P contained in the connecting conductive portion 21 of the elastic anisotropic conductive film 20 include a highly conductive metal on the surface of magnetic core particles (hereinafter also referred to as "magnetic core particles"). It is preferable to use the one coated with!

[0040] The magnetic core particles for obtaining the conductive particles P have a number average particle diameter of 3 to 40 μm. It is preferable that

Here, the number average particle diameter of the magnetic core particles refers to that measured by a laser diffraction scattering method.

If the number average particle diameter is 3 μm or more, it is easy to obtain a conductive part 21 for connection that is easily deformed under pressure, has a low resistance value, and high connection reliability. On the other hand, if the number average particle diameter is 40 μm or less, the fine connecting conductive part 21 can be easily formed, and the obtained connecting conductive part 21 has stable conductivity. It is easy to become.

[0041] The BET specific surface area of the magnetic core particles is preferably 10 to 500 m ² / kg, more preferably 20 to 500 m ² Zkg, and particularly preferably 50 to 400 m ² Zkg.

If the BET specific surface area is 10 m ² / kg or more, the magnetic core particle has a sufficiently large area that can be measured, so that the required amount of plating can be reliably applied to the magnetic core particle. Therefore, the conductive particles P having high conductivity can be obtained, and the contact area between the conductive particles P is sufficiently large, so that stable and high conductivity can be obtained. On the other hand, if the BET specific surface area is 500 m ² Zkg or less, the magnetic core particles will not be brittle, and will retain stable and high conductivity with little damage when subjected to physical stress. Is done.

[0042] Further, the magnetic core particles preferably have a coefficient of variation in particle diameter of 50% or less, more preferably 40% or less, still more preferably 30% or less, and particularly preferably 20% or less. Is.

Here, the coefficient of variation of the particle diameter is determined by the formula: (σ ZDn) X 100 (where σ is the standard deviation value of the particle diameter, and Dn is the number average particle diameter of the particles). If the coefficient of variation of the particle diameter is 50% or less, the uniformity of the particle diameter is large, and thus the conductive portion 21 for connection with a small variation in conductivity can be formed.

[0043] As a material constituting the magnetic core particle, iron, nickel, cobalt, a force obtained by coating these metals with copper, resin, and the like can be used. The saturation magnetic field is 0.1 W b / m. ^Two or more can be preferably used, more preferably 0.3 Wb / m ² or more, and particularly preferably 0.5 WbZm ² or more. Specifically, iron, nickel, cobalt or the like. Or alloys thereof.

If this saturation magnetic field is 0.1 lWbZm ² or more, the conductive particles P can be easily moved in the molding material layer for forming the anisotropic anisotropic conductive film 20 by the method described later. As a result, the conductive particles P can be reliably moved to the portion to be the conductive portion for connection in the molding material layer to form a chain of the conductive particles P.

[0044] The conductive particles P used to obtain the conductive portion 21 for connection are obtained by coating the surfaces of the magnetic core particles with a highly conductive metal.

Here, the “highly conductive metal” means one having an electrical conductivity at 0 ° C. of 5 × 10 ⁶ Ω— ¹ !!! — ¹ or more.

As such a highly conductive metal, gold, silver, rhodium, platinum, chromium, or the like can be used. Among these, gold is preferable because it is chemically stable and has high conductivity.

[0045] The ratio of the highly conductive metal to the core particle [(mass of high conductive metal 質量 mass of core particle) X 100] in the conductive particle Ρ is 15 mass% or more, preferably 25 to 35 mass%. It is said. When the proportion of the highly conductive metal is less than 15% by mass, the conductivity of the conductive particles Ρ decreases significantly when the anisotropically conductive connector obtained is repeatedly used in a high temperature environment. The required conductivity cannot be maintained.

[0046] In addition, the conductive particles 算出 have a thickness t of the covering layer of a highly conductive metal, calculated by the following formula (1), of 50 nm or more, and preferably 100 to 200 nm. The Formula (1) t = [l / (Sw)] X [N / (l -N)]

[Where t is the thickness of the coating layer made of a highly conductive metal (m), Sw is the BET specific surface area of the core particle (m ² / kg), is the specific gravity of the highly conductive metal (kgZm ³ ), and N is (high conductivity The weight of the conductive metal is the value of the total weight of the Z conductive particles). ]

The above mathematical formula is derived as follows.

(i) When the weight of the magnetic core particle is Mp (kg), the surface area S (m ² ) of the magnetic core particle is S = SwMp (2)

Sought by.

(ii) When the weight of the coating layer made of a highly conductive metal is m (kg), the volume V (m ³ ) of the coating layer Is

Formula (3)

Sought by.

(iii) Here, assuming that the thickness of the coating layer is uniform over the entire surface of the conductive particles, t = VZS. Substituting Equation (2) and Equation (3) above into The layer thickness t is

t = (m / p) / (SwMp) = m / (Sw p · Μρ) Equation (4)

Sought by.

(iv) Also, since N is the ratio of the mass of the coating layer to the mass of the entire conductive particle, the value of N is

N = m / (Mp + m) Equation (5)

Sought by.

(V) Dividing the numerator and denominator on the right side of this equation (5) by Mp,

N = (m / Mp) m / Mp). When (1 + m / Mp) is applied to both sides,

N (l + m / Mp) = mZMp, and

N + N (m / Mp) = mZMp, and when N (mZMp) is shifted to the right side,

N = m / Mp -N (m / Mp) = (m / Mp) (1 N), and when both sides are divided by (1 N),

N / (l-N) = mZMp

Therefore, the weight Mp of the magnetic core particle is

Mp = m / [N / (1-N)] = m (l-N) / N formula (6)

Sought by.

(vi) And when substituting equation (6) into equation (4),

t = l / [Sw p (1 N) ZN]

= [l / (Sw)] X [N / (l-N)]

Is guided.

If the thickness t of the coating layer is 50 nm or more, the ferromagnetic material constituting the magnetic core particles forms the coating layer when the anisotropically conductive connector is repeatedly used under a high temperature environment. Even if it moves inside, the surface of the conductive particles P has high conductivity. Since the metal is present in a high proportion, the intended conductivity that the conductivity of the conductive particles P is not significantly reduced is maintained.

[0049] The number average particle diameter of the conductive particles P is preferably 3 to 40 µm, more preferably 6 to 25 πι.

By using such conductive particles, the resulting elastic anisotropic conductive film 20 can be easily deformed under pressure, and the connecting conductive portion 21 of the elastic anisotropic conductive film 20 can be made V As a result, sufficient electrical contact can be obtained between the conductive particles.

The shape of the conductive particles is not particularly limited, but is spherical, star-shaped, or aggregated in that it can be easily dispersed in the polymer material-forming material. It is preferable that it is a lump with secondary particles.

[0050] Such conductive particles can be obtained, for example, by the following method.

First, magnetic core particles having a required particle diameter are prepared by making a ferromagnetic material into particles by a conventional method or preparing commercially available ferromagnetic particles and classifying the particles.

Here, the particle classification treatment can be performed by a classification device such as an air classification device or a sonic sieving device.

Specific conditions for the classification treatment are appropriately set according to the number average particle diameter of the target magnetic core particles, the type of the classification device, and the like.

Next, the surface of the magnetic core particle is treated with an acid, and further washed with pure water, for example, to remove impurities such as dirt, foreign matter, and oxide film present on the surface of the magnetic core particle. Conductive particles can be obtained by coating the surface of the core particles with a highly conductive metal.

Here, hydrochloric acid can be used as the acid used to treat the surface of the magnetic core particles.

The method of coating the surface of the magnetic core particles with the highly conductive metal is not limited to these methods, which can use an electroless plating method, a replacement plating method, or the like.

[0051] The method for producing conductive particles by the electroless plating method or the substitution plating method will be described. First, acid-treated and washed magnetic core particles are added to the plating solution. A slurry is prepared, and the magnetic core particles are subjected to electroless plating or substitution plating while stirring the slurry. Next, the particles in the slurry are separated by MEC solution, and then the particles are washed with, for example, pure water to obtain conductive particles in which the surface of the magnetic core particles is coated with a highly conductive metal. It is done.

Alternatively, after forming an undercoat layer on the surface of the magnetic core particles, a finish layer made of a highly conductive metal may be formed on the surface of the undercoat layer. The method for forming the base plating layer and the plating layer formed on the surface thereof is not particularly limited, but the base plating layer is formed on the surface of the magnetic core particles by the electroless plating method, and then the substitution plating method. It is preferable to form a plating layer made of a highly conductive metal on the surface of the base plating layer. The plating solution used for the electroless plating or the substitution plating is not particularly limited, but variously sold products. Can be used.

[0052] Further, when the surface of the magnetic core particles is coated with a highly conductive metal, the particles may be aggregated, so that conductive particles having a large particle diameter may be generated. It is preferable to classify the conductive particles, so that conductive particles having the desired particle diameter can be obtained with certainty.

Examples of the classification device for performing the classification treatment of the conductive particles include those exemplified as the classification device used for the classification treatment for preparing the above-described magnetic core particles.

[0053] The content ratio of the conductive particles P in the connecting conductive portion 21 is preferably 10 to 60%, preferably 15 to 50% in terms of volume fraction. When this ratio is less than 10%, the connection conductive part 21 having a sufficiently small electric resistance value may not be obtained. On the other hand, when this ratio exceeds 60%, the obtained conductive part 21 for connection becomes fragile, and the elasticity necessary for the conductive part 21 for connection may not be obtained immediately.

[0054] The anisotropic conductive connector 1 can be manufactured as follows.

A frame plate 10 in which an opening 11 is formed corresponding to an electrode region in which electrodes to be inspected in all integrated circuits formed on a wafer to be inspected is formed. Where The method for forming the opening 11 of the lam plate 10 is appropriately selected according to the material constituting the frame plate 10, and for example, an etching method or the like can be used.

[0055] << Formation of one layer of conductive elastomer >>

A liquid elastomer material that is cured to become an elastic polymer substance, preferably a conductive elastomer material, in which conductive particles exhibiting magnetism are dispersed in addition-type liquid silicone rubber is prepared. Next, as shown in FIG. 5, a conductive elastomer material layer 21A is formed by applying a conductive elastomer material on the releasable support plate 16 for forming a conductive portion. Here, in the conductive elastomer material layer 21A, as shown in FIG. 6, the conductive particles P exhibiting magnetism are contained in a dispersed state.

Next, by applying a magnetic field in the thickness direction to the conductive elastomer material layer 21A, the conductive particles P dispersed in the conductive elastomer material layer 21A as shown in FIG. Are aligned in the thickness direction of the conductive elastomer material layer 21A. Then, while continuing the action of the magnetic field on the conductive elastomer material layer 21A, or after stopping the action of the magnetic field, the conductive elastomer material layer 21A is hardened and shown in FIG. In this way, the conductive elastomer layer 21B, which is contained in the elastic polymer material in a state in which the conductive particles P are aligned in the thickness direction, is formed in a state where it is supported on the releasable support plate 16. Is done.

[0056] In the above, as a material constituting the releasable support plate 16, metals, ceramics, resins, composite materials thereof, and the like can be used.

As a method of applying the conductive elastomer material, a printing method such as screen printing, a roll coating method, a blade coating method, or the like can be used.

The thickness of the conductive elastomer material layer 21A is set in accordance with the thickness of the connecting conductive portion to be formed.

As means for applying a magnetic field to the conductive elastomer material layer 21A, an electromagnet, a permanent magnet, or the like can be used.

The strength of the magnetic field applied to the conductive elastomer material layer 21A is preferably 0.2 to 2.5 Tesla.

The curing process for the conductive elastomer material layer 21A is usually performed by heat treatment. The The specific heating temperature and heating time are appropriately set in consideration of the type of material for the elastomer constituting the conductive elastomer material layer 21A, the time required for the movement of the conductive particles, and the like.

[0057] <Formation of conductive portion for connection>

As shown in FIG. 9, a thin metal layer 17 for a plating electrode is formed on the surface of the conductive elastomer layer 21 B supported on the releasable support plate 16. Next, as shown in FIG. 10, on the thin metal layer 17, the pattern of the conductive part to be formed to be formed, that is, the pattern of the electrode to be inspected in the wafer to be inspected, is applied by a photolithography technique. A resist layer 18 in which a plurality of openings 18a are formed is formed according to a specific pattern. Thereafter, as shown in FIG. 11, by using the thin metal layer 17 as a plating electrode, the resist layer is subjected to electrolytic plating treatment on the exposed portion of the thin metal layer 17 through the opening 18a of the resist layer 18. A metal mask 19 is formed in the 18 openings 18a. In this state, by applying laser processing to the conductive elastomer layer 21B, the thin metal layer 17 and the resist layer 18, a part of the resist layer 18, the thin metal layer 17 and the conductive elastomer layer 21B is removed. As a result, as shown in FIG. 12, a plurality of connection conductive portions 21 arranged according to a specific pattern are formed on the releasable support plate 16. Thereafter, the remaining thin metal layer 17 and metal mask 19 are peeled off from the surface of the connecting conductive portion 21.

In the above, as a method for forming the metal thin layer 17 on the surface of the conductive elastomer layer 21 B, an electroless plating method, a sputtering method, or the like can be used.

As a material constituting the metal thin layer 17, copper, gold, aluminum, rhodium, or the like can be used.

The thickness of the thin metal layer 17 is preferably 0.05-2111, and more preferably 0.1-1 / z m. If this thickness is too small, a uniform thin layer may not be formed, which may be inappropriate as a plating electrode. On the other hand, if this thickness is excessive, it may be difficult to remove by laser processing.

The thickness of the resist layer 18 is set according to the thickness of the metal mask 19 to be formed. As a material constituting the metal mask 19, copper, iron, aluminum, gold, rhodium, or the like can be used. The thickness of the metal mask 19 is preferably 2 μm or more, more preferably 5 to 20 μm. If this thickness is too small, it may be unsuitable as a mask for the laser.

The laser processing is preferably performed using a carbon dioxide laser or an ultraviolet laser, so that the connection conductive portion 21 having a desired form can be reliably formed.

[0059] << Formation of Insulating Portion >>

As shown in FIG. 13, a releasable support plate 16A for forming an insulating portion is prepared, and a frame plate 10 is disposed on the surface of the releasable support plate 16A and cured to be an insulating elastic polymer. The insulating material layer 22A is formed by applying a liquid elastomer material that is a substance. Here, in the formation of the insulating part material layer 22A, two plate-like spacers having openings that conform to the contour shape of the surface of the insulating part to be formed are prepared, and the mold release property On the support plate 16A, one spacer, the frame plate 10 and the other spacer are overlapped in this order, and the elastomer is used in the opening of each spacer and the opening of the frame plate 10. By filling the material, the insulating material layer 22A can be formed. According to such a method, it is possible to reliably form the insulating portion 22 having the desired form.

Next, as shown in FIG. 14, the releasable support plate 16 formed with a plurality of connecting conductive portions 21 is overlaid on the releasable support plate 16A formed with the insulating portion material layer 22A. Thus, each of the connecting conductive portions 21 is infiltrated into the insulating portion material layer 22A and brought into contact with the releasable support plate 16A. Thus, the insulating material layer 22A is formed between the adjacent connecting conductive portions 21. Thereafter, in this state, by performing the curing process of the insulating portion material layer 22A, as shown in FIG. 15, the insulating portion 22 that mutually insulates each of the connecting conductive portions 21 is provided. The anisotropic anisotropic conductive film 20 is formed integrally with the connecting conductive portion 21, thereby forming the anisotropic conductive film 20.

Then, by releasing the elastic anisotropic conductive film 20 such as the releasable support plates 16 and 16A, the anisotropic conductive connector having the configuration shown in FIG. 1 is obtained.

As described above, as the material constituting the releasable support plate 16A, the same material as the releasable support plate 16 for forming the conductive portion can be used. As a method of applying the elastomer material, a printing method such as screen printing, a roll coating method, a blade coating method, or the like can be used.

The thickness of the insulating part material layer 22A is set according to the thickness of the insulating part to be formed. The curing process of the insulating part material layer 22A is usually performed by a heat treatment. The specific heating temperature and heating time are appropriately set in consideration of the type of the material for the elastomer constituting the insulating portion material layer 22A.

[0061] According to the above manufacturing method, the conductive elastomer layer 21B in which the conductive particles P are dispersed so as to be aligned in the thickness direction is laser-processed to remove a part thereof, thereby removing the object. Thus, the connection conductive portion 21 having the desired conductivity filled with a required amount of the conductive particles P can be obtained with certainty. In addition, a plurality of connection conductive portions 21 arranged according to a specific pattern are formed on the releasable support plate 16, and an insulating material layer 22A is formed between the connection conductive portions 21. Since the insulating part 22 is formed by performing the curing process, the insulating part 22 can be reliably obtained without any conductive particles P.

In addition, it is not necessary to use an expensive mold in which a large number of ferromagnetic layers used to manufacture a conventional anisotropically conductive connector are arranged.

Therefore, according to the anisotropic conductive connector obtained by such a method, each of the electrodes to be inspected, even if the electrodes to be inspected on the wafer to be inspected are arranged at a high density with a small pitch. Therefore, the required electrical connection can be reliably achieved, and the manufacturing force can be reduced.

[0062] Further, since each of the elastic anisotropic conductive films 20 is supported by the opening edge of the frame plate 10, it is difficult to be deformed and in electrical connection work with a wafer to be handled and immediately inspected. Positioning and holding and fixing to the wafer can be easily performed. In addition, each of the openings 11 of the frame plate 10 is formed corresponding to an electrode region in which the electrodes to be inspected of all integrated circuits formed on the wafer to be inspected are arranged. Since the elastic anisotropic conductive film 20 to be arranged may have a small area, it is easy to form the individual elastic anisotropic conductive films 20.

In addition, the elastic anisotropic conductive film 20 having a small area has the elastic anisotropy even when it receives a thermal history. Since the absolute amount of thermal expansion in the plane direction of the anisotropic conductive film 20 is small, the thermal expansion in the plane direction of the elastic anisotropic conductive film 20 is reliably regulated by the frame plate. However, since the thermal expansion of the anisotropically conductive connector as a whole depends on the thermal expansion of the material constituting the frame plate 10, the use of a material having a low thermal expansion coefficient as the material constituting the frame plate 10 Even when a thermal history due to temperature changes is received, displacement of the conductive part for connection in the anisotropic conductive connector and the electrode to be inspected on the wafer is prevented, so that a good electrical connection state is stably maintained. The

Further, since the positioning hole 13 is formed in the frame plate 10, the alignment with respect to the wafer to be inspected or the circuit board for inspection can be easily performed.

In addition, since the air flow holes 12 are formed in the frame plate 10, in the wafer inspection apparatus to be described later, when the pressure reducing method is used as a means for pressing the probe member, the inside of the chamber is decompressed. In addition, the air existing between the anisotropic conductive connector and the inspection circuit board is exhausted through the air flow hole 12 of the frame plate 10, which ensures that the anisotropic conductive connector and the inspection circuit board are connected. The required electrical connection can be reliably achieved.

[Wafer Inspection Equipment]

FIG. 16 is an explanatory sectional view showing an outline of a configuration in an example of a wafer inspection apparatus using the anisotropic conductive connector according to the present invention. This wafer inspection apparatus is for performing electrical inspection of a plurality of integrated circuits formed on a wafer in the state of the wafer.

The wafer inspection apparatus shown in FIG. 16 has a probe member 1 that electrically connects each of the electrodes to be inspected 7 of the wafer 6 to be inspected and a tester. In this probe member 1, as shown in an enlarged view in FIG. 17, a plurality of inspection electrodes 31 are formed on the surface (FIG. 17) according to a pattern corresponding to the pattern of the inspection target electrode 7 of the wafer 6 to be inspected. In FIG. 1, the anisotropic conductive connector 2 having the configuration shown in FIGS. 1 to 4 is provided on the surface of the inspection circuit board 30 with its elastic anisotropic conductivity. Each of the conductive portions 21 for connection in the membrane 20 is provided so as to be in contact with each of the inspection electrodes 31 of the circuit board 30 for inspection, and on the surface (the lower surface in FIGS. 16 and 17) of this anisotropic conductive connector 2 , Insulation The sheet-like probe 40 in which a plurality of electrode structures 42 are arranged according to a pattern corresponding to the pattern of the electrode 7 to be inspected on the wafer 6 to be inspected on the conductive sheet 41 is different from each other in the electrode structure 42. It is provided so as to be in contact with each of the connecting conductive portions 21 in the elastic anisotropic conductive film 20 of the two-way conductive connector 2.

Further, a pressure plate 3 for pressing the probe member 1 downward is provided on the back surface of the inspection circuit board 30 in the probe member 1 (upper surface in FIG. 16). A wafer mounting table 4 on which a certain wafer 6 is mounted is provided, and a heater 5 is connected to each of the caloric pressure plate 3 and the wafer mounting table 4.

[0065] As a substrate material constituting the inspection circuit board 30, various conventionally known substrate materials can be used. Specific examples thereof include glass fiber reinforced epoxy resin, glass fiber reinforced phenol resin. And composite fiber materials such as glass fiber reinforced polyimide resin, glass fiber reinforced bimaleimide triazine resin, and ceramic materials such as glass, silicon dioxide, and alumina.

Further, when configuring a wafer inspection apparatus for conducting a WLBI test, linear thermal expansion coefficient is 3 X 10- ⁵ Ζκ is preferably from preferably instrument using the following items 1 X 10- ⁷ to 1 X 10 "VK, particularly preferably ^{^{1 X 10- 6 ~6 X 10- 6}} Ζκ.

Specific examples of such a substrate material include Pyrex (registered trademark) glass, quartz glass, alumina, beryllia, silicon carbide, aluminum nitride, and boron nitride.

[0066] The sheet-like probe 40 in the probe member 1 will be specifically described. The sheet-like probe 40 includes a flexible insulating sheet 41, and the insulating sheet 41 includes the insulating sheet 41. The electrode structures 42 made of a plurality of metals extending in the thickness direction of 41 are separated from each other in the surface direction of the insulating sheet 41 according to the pattern corresponding to the pattern of the electrode 7 to be inspected on the wafer 6 to be inspected. Arranged.

Each of the electrode structures 42 includes a protruding surface electrode portion 43 exposed on the surface (lower surface in the figure) of the insulating sheet 41 and a plate-like back surface electrode portion 44 exposed on the back surface of the insulating sheet 41. The insulating sheet 41 is configured to be integrally connected to each other by a short-circuit portion 45 extending through the thickness direction of the insulating sheet 41. [0067] The insulating sheet 41 is not particularly limited as long as it is flexible and has insulating properties. For example, a resin sheet made of polyimide resin, liquid crystal polymer, polyester, fluorine resin, fiber, etc. A sheet obtained by impregnating the above-mentioned coffin with a knitted cloth can be used.

Further, the thickness of the insulating sheet 41 is not particularly limited as long as the insulating sheet 41 is flexible, but is preferably 10 to 50 μm, more preferably 10 to 25 μm. .

[0068] As the metal constituting the electrode structure 42, nickel, copper, gold, silver, palladium, iron, or the like can be used. The electrode structure 42 is made of a single metal as a whole. Alternatively, it may be made of an alloy of two or more kinds of metals or a laminate of two or more kinds of metals.

Further, the surface of the front electrode portion 43 and the back electrode portion 44 in the electrode structure 42 is prevented from being oxidized by the electrode portion, and an electrode portion having a low contact resistance can be obtained. It is preferable that a chemically stable and highly conductive metal film such as palladium is formed.

[0069] The protruding height of the surface electrode portion 43 in the electrode structure 42 is 15 to 50 m in that stable electrical connection can be achieved to the electrode 7 to be inspected on the wafer 6. More preferably, it is 15-30 / ζ πι. The diameter of the surface electrode portion 43 is a force set according to the size and pitch of the electrode to be inspected of the wafer 6, for example, 30 to 80 / ζ πι, and preferably 30 to 50 μm.

The diameter of the back electrode portion 44 in the electrode structure 42 is larger than the diameter of the short-circuit portion 45 and smaller than the arrangement pitch of the electrode structure 42, but is as large as possible! / As a result, it is possible to reliably achieve a stable electrical connection to the connection conductive portion 21 in the elastic anisotropic conductive film 20 of the anisotropic conductive connector 2. Further, the thickness of the back electrode part 44 is preferably 20 to 50 μm, more preferably 35 to 50 μm, from the viewpoint that the strength is sufficiently high and excellent repeated durability can be obtained.

The diameter of the short-circuit portion 45 in the electrode structure 42 is preferably 30 to 80 μm, more preferably 30 to 50 μm, from the viewpoint that sufficiently high strength can be obtained. [0070] The sheet-like probe 40 can be manufactured, for example, as follows.

That is, a laminated material in which a metal layer is laminated on the insulating sheet 41 is prepared, and the insulating sheet 41 is laminated on the insulating sheet 41 by laser processing, dry etching or the like. A plurality of through holes penetrating in the thickness direction are formed according to a pattern corresponding to the pattern of the electrode structure 42 to be formed. Next, the laminated material is subjected to photolithography and plating treatment to form a short-circuit portion 45 integrally connected to the metal layer in the through hole of the insulating sheet 41, and the insulating sheet 41 On the surface, a protruding surface electrode portion 43 integrally connected to the short-circuit portion 45 is formed. Thereafter, the metal layer in the laminated material is subjected to a photo-etching process to remove a part thereof, thereby forming the back electrode portion 44 to form the electrode structure 42, thereby obtaining the sheet-like probe 40. .

In such an electrical inspection apparatus, the wafer 6 to be inspected is placed on the wafer mounting table 4, and then the probe member 1 is pressed downward by the pressure plate 3. Each of the surface electrode portions 43 in the electrode structure 42 of the sheet-like probe 40 is in contact with each of the electrodes 7 to be inspected 6, and each of the surface electrode portions 43 is further in contact with the wafer 6 Each of the inspection electrodes 7 is pressurized. In this state, each of the connection conductive portions 21 in the elastic anisotropic conductive film 20 of the anisotropic conductive connector 1 is connected to the test electrode 31 of the test circuit board 30 and the electrode structure 42 of the sheet-like probe 40. By being sandwiched between the surface electrode parts 43 and compressed in the thickness direction, a conductive path is formed in the connecting conductive part 21 in the thickness direction. Electrical connection between the inspection electrode 7 and the inspection electrode 31 of the inspection circuit board 30 is achieved. Thereafter, the wafer 6 is heated to a predetermined temperature by the caloheater 5 via the wafer mounting table 4 and the pressure plate 3, and in this state, a predetermined electrical circuit is provided for each of the plurality of integrated circuits on the wafer 6. A check is performed.

[0072] According to such a wafer inspection apparatus, electrical connection to the inspection target electrode 7 of the wafer 6 to be inspected is achieved via the probe member 1 having the anisotropic conductive connector 2 described above. Therefore, even if the pitch of the electrodes 7 to be inspected is small, the alignment and holding / fixing with respect to the wafer can be easily performed, and the force is repeated many times. The required electrical inspection can be performed stably over a long period of time even when used repeatedly or when used repeatedly in high temperature environments such as WLBI tests. Further, the elastic anisotropic conductive film 20 in the anisotropic conductive connector 2 has a small area, and even when subjected to a thermal history, thermal expansion in the surface direction of the elastic anisotropic conductive film 20 is performed. Therefore, the thermal expansion in the plane direction of the elastic anisotropic conductive film 20 is reliably regulated by the frame plate by using a material having a small linear thermal expansion coefficient as a material constituting the frame plate 10. . Therefore, even when performing a WLBI test on a large-area wafer, it is possible to stably maintain a good electrical connection state.

FIG. 18 is an explanatory cross-sectional view showing an outline of a configuration in another example of a wafer inspection apparatus using the anisotropic conductive connector according to the present invention.

This wafer inspection apparatus has a box-shaped chamber 50 having an open top surface in which a wafer 6 to be inspected is stored. An exhaust pipe 51 for exhausting the air inside the chamber 150 is provided on the side wall of the chamber 50. The exhaust pipe 51 includes an exhaust device (not shown) such as a vacuum pump. Is connected.

A probe member 1 having the same configuration as the probe member 1 in the wafer inspection apparatus shown in FIG. 16 is disposed on the chamber 150 so as to airtightly close the opening of the chamber 150. Specifically, an elastic O-ring 55 is disposed in close contact with the upper end surface of the side wall of the chamber 50, and the probe member 1 includes the anisotropic conductive connector 2 and the sheet-like probe 40. Is placed in the chamber 50 and the peripheral portion of the circuit board 30 for inspection is in close contact with the 0-ring 55, and the circuit board 30 for inspection is disposed on the back surface (see FIG. The upper surface is pressed downward by the pressure plate 3 provided! /

A heater 5 is connected to the chamber 50 and the pressure plate 3.

[0074] In such a wafer inspection apparatus, by driving the exhaust device connected to the exhaust pipe 51 of the chamber 50, the inside of the chamber 50 is depressurized to, for example, lOOOPa or less, so that the atmospheric pressure The probe member 1 is pressed downward. As a result, since the O-ring 55 is elastically deformed, the probe member 1 moves downward. As a result, each of the surface electrode portions 43 in the electrode structure 42 of the sheet-like probe 40 causes each of the electrodes 7 to be inspected on the wafer 6. Each of these is pressurized. In this state, each of the connecting conductive portions 21 in the elastic anisotropic conductive film 20 of the anisotropic conductive connector 2 is connected to the test electrode 31 of the test circuit board 30 and the electrode structure 42 of the sheet-like probe 40. The front surface electrode portion 43 is compressed and compressed in the thickness direction. As a result, a conductive path is formed in the connection conductive portion 21 in the thickness direction. And electrical connection between the test electrode 31 and the test electrode 31 of the test circuit board 30 are achieved. Thereafter, the calorie heater 5 heats the wafer 6 to a predetermined temperature through the chamber 50 and the pressure plate 3, and in this state, a required electric power is supplied to each of the plurality of integrated circuits on the wafer 6. Inspection is performed.

According to such a wafer inspection apparatus, the same effect as that of the wafer inspection apparatus shown in FIG. 16 can be obtained, and furthermore, since a large pressurizing mechanism is unnecessary, the entire inspection apparatus can be reduced in size. In addition, even if the wafer 6 to be inspected has a large area of, for example, a diameter of 8 inches or more, the entire wafer 6 can be pressed with a uniform force. Since the air flow hole 12 is formed in the frame plate 10 of the anisotropic conductive connector 2, the anisotropic conductive connector 2 and the inspection circuit board 30 are reduced when the pressure in the chamber 50 is reduced. Between the anisotropic conductive connector 2 and the air flow hole 12 of the frame plate 10 in the anisotropic conductive connector 2 so that the anisotropic conductive connector 2 and the circuit board 30 for inspection are securely adhered to each other. Therefore, the required electrical connection can be reliably achieved.

[Other Embodiments]

The present invention is not limited to the above-described embodiment, and various modifications can be made as follows.

(1) In the anisotropic conductive connector, the elastic anisotropic conductive film 20 has a non-connection conductive portion that is not electrically connected to the electrode to be inspected on the wafer, in addition to the connection conductive portion 21. Also good. Hereinafter, an anisotropic conductive connector having an elastic anisotropic conductive film in which a non-connection conductive portion is formed will be described.

FIG. 19 is an enlarged plan view showing an elastic anisotropic conductive film in another example of the anisotropic conductive connector according to the present invention. In the anisotropic anisotropic conductive film 20 of this anisotropically conductive connector, the thickness direction (FIG. 19) is electrically connected to the inspection target electrode of the wafer to be inspected. Are arranged in two rows according to a pattern corresponding to the pattern of the electrode to be inspected, and each of these connection conductive portions 21 has magnetism. The conductive particles shown are densely contained in an aligned state in the thickness direction, and are insulated from each other by an insulating portion 22 containing no conductive particles.

In the direction in which the connecting conductive portions 21 are arranged, the thickness between the connecting conductive portion 21 located on the outermost side and the frame plate 10 is not electrically connected to the electrode to be inspected of the wafer to be inspected. A non-connection conductive portion 26 extending in the direction is formed. The non-connection conductive portion 26 is densely contained in a state in which the conductive particles exhibiting magnetism are aligned so as to be aligned in the thickness direction, and the conductive portion for connection is formed by the insulating portion 22 containing no conductive particles. Isolated from part 21.

Further, in the illustrated example, each of the non-connecting conductive portions 26 is formed so as to protrude from one surface of the insulating portion 22, whereby the non-connecting conductive portion 26 is formed on one surface of the elastic anisotropic conductive film 20. A projecting portion 27 is formed.

Other configurations are basically the same as those of the anisotropic conductive connector shown in FIGS.

FIG. 20 is an enlarged plan view showing an elastic anisotropic conductive film in still another example of the anisotropic conductive connector according to the present invention. The anisotropic anisotropic conductive film 20 of this anisotropically conductive connector is used for a plurality of connections extending in the thickness direction (direction perpendicular to the paper surface in FIG. 20) electrically connected to the inspection target electrode of the wafer to be inspected. Conductive portions 21 are arranged so as to be arranged according to a pattern corresponding to the pattern of the electrode to be inspected, and each of these conductive portions 21 for connection is densely arranged in a state where conductive particles exhibiting magnetism are aligned in the thickness direction. They are contained and insulated from each other by insulating parts 22 that do not contain any conductive particles.

Of these connection conductive parts 21, two adjacent connection conductive parts 21 located in the center are arranged at a separation distance larger than the separation distance between the other adjacent connection conductive parts 21. And between the two adjacent conductive parts for connection 21 located in the center, they are not electrically connected to the inspection electrode of the wafer to be inspected. A non-connection conductive portion 26 extending in the thickness direction is formed. The non-connection conductive portion 26 is densely contained in a state in which the conductive particles exhibiting magnetism are aligned so as to be aligned in the thickness direction, and the conductive portion for connection is formed by the insulating portion 22 containing no conductive particles. 21 and are mutually insulated.

Further, in the illustrated example, each of the non-connection conductive portions 26 is formed so as to protrude from one surface of the insulating portion 22, whereby the both sides of the elastic anisotropic conductive film 20 are connected to the non-connection conductive portions 26. A projecting portion 27 is formed.

The other specific configurations are basically the same as the anisotropic conductive connector configurations shown in FIGS.

[0079] (2) In the anisotropically conductive connector, each of the connecting conductive portions 21 is formed so that each force on both surfaces of the insulating portion 22 also protrudes. The protrusion part which concerns on the electroconductive part 21 for an object may be formed. Such an elastic anisotropic conductive film 21 can be obtained as follows. That is, in forming the insulating portion 22, the connecting conductive portion 21 is pressed and compressed in the thickness direction by the releasable support plates 16 and 16A, and the insulating portion material layer 22A is cured in this state, thereby insulating the insulating portion 22. Form part 22. After that, by releasing the pressure applied to the connecting conductive part 21 by the releasable support plates 16 and 16A, the compressed connecting conductive part 21 is restored to the original form, and thereby the double-sided force of the insulating part 22 is also increased. A connecting conductive portion 21 having a protruding portion is obtained.

(3) The protrusions 23 in the elastic anisotropic conductive film 20 are not essential, and both surfaces of the elastic anisotropic conductive film 20 may be flat or may be formed with recesses.

[0080] (4) As a method for forming the conductive elastomer layer 21B supported on the releasable support plate 16, a conductive particle exhibiting magnetism in an insulating elastic polymer material manufactured in advance is used. The conductive elastomer sheet dispersed in a state of being aligned in the thickness direction is adhered on the releasable support plate 16 by the adhesive property of the conductive elastomer sheet or by an appropriate adhesive. It is also possible to use a method of supporting them. Here, the conductive elastomer sheet is formed, for example, by forming a conductive elastomer material layer between two resin sheets, and applying a magnetic field in the thickness direction to the conductive elastomer layer. , Orienting the conductive particles in the material layer for the conductive elastomer so that they are aligned in the thickness direction, It can be manufactured by curing the conductive elastomer material layer while continuing the action of the magnetic field or after stopping the action of the magnetic field.

(5) In forming the conductive portion for connection 21, the conductive portion for connection is formed by removing all of the conductive elastomer layer 21B other than the portion to be the conductive portion for connection by laser processing. However, as shown in FIG. 21 and FIG. 22, only the peripheral portion of the conductive elastomer layer 21B that becomes the conductive portion for connection can be removed to form the conductive portion for connection 21. . In this case, the remaining portion of the conductive elastomer layer 21B can be removed by mechanically peeling from the releasable support plate 16.

[0081] (6) In the probe member, the sheet-like probe 40 is not indispensable. The elastic anisotropic conductive film 20 in the anisotropic conductive connector 2 contacts the wafer to be inspected and is electrically connected. Even a configuration that achieves ヽ.

(7) The anisotropic conductive connector according to the present invention includes an electrode region in which an electrode to be inspected is arranged in a part of an integrated circuit formed on a wafer to be inspected for opening force of the frame plate. Correspondingly, an elastic anisotropic conductive film is arranged in each of these openings.

According to such an anisotropic conductive connector, a wafer can be divided into two or more areas, and for each divided area, a probe test can be collectively performed on the integrated circuit formed in the area.

That is, in the method of inspecting a wafer using the anisotropic conductive connector of the present invention or the probe member of the present invention, it is not essential to perform all integrated circuits formed on the wafer together! /.

In the burn-in test, the time required for each integrated circuit is as long as several hours. Therefore, if all the integrated circuits formed on the wafer are inspected at once, high time efficiency can be obtained. Since the inspection time required for each integrated circuit is as short as several minutes, the wafer is divided into two or more areas, and the integrated circuits formed in the areas are collectively probed for each divided area. Even when tested, a sufficiently high time efficiency can be obtained. As described above, according to the method of performing the electrical inspection for each divided area on the integrated circuit formed on the wafer, the integrated circuit formed on the wafer having a diameter of 8 inches or 12 inches with a high degree of integration is electrically When performing a physical inspection, it is possible to reduce the number of inspection electrodes and the number of wirings on the circuit board to be used, compared to the method of performing the inspection collectively for all integrated circuits. It is possible to reduce the manufacturing cost of inspection equipment.

[0083] (8) The anisotropic conductive connector of the present invention or the probe member of the present invention is not only for inspecting a wafer on which an integrated circuit having planar electrodes made of aluminum is formed, but also from gold or solder. It can also be used for inspection of a wafer on which an integrated circuit having protruding electrodes (bumps) is formed.

Since an electrode made of gold or solder is less likely to form an oxide film on its surface compared to an electrode made of aluminum, inspection of a wafer on which an integrated circuit having such a protruding electrode is formed In this case, it is not necessary to pressurize with a large load necessary to break through the oxide film, and the conductive part for connecting the anisotropically conductive connector is brought into direct contact with the electrode to be inspected without using a sheet-like probe. The inspection can be performed in the state.

Example

[0084] Hereinafter, the ability to describe specific examples of the present invention. The present invention is not limited to these examples.

[0085] [Production of test wafer]

As shown in FIG. 23, a diameter of 8 inch silicon (coefficient of linear thermal expansion 3. 3 X 10- ⁶ ZK) made on the wafer 6, dimensions respectively integrated circuits L square 9 mm X 9 mm in total 393 Individually formed. Each of the integrated circuits L formed on the wafer 6 has an electrode area A to be inspected at the center thereof as shown in FIG. 24, and each of the electrode areas A to be inspected has an electrode area A as shown in FIG. 40 rectangular electrodes 7 with a vertical dimension (vertical direction in FIG. 25) of 200 μm and a horizontal dimension (horizontal direction in FIG. 25) of 60 μm with a pitch of 120 μm They are arranged in a row in the direction. The total number of electrodes 7 to be inspected on the entire wafer 6 is 15720, and all the electrodes 7 to be inspected are electrically insulated from each other. Hereinafter, this wafer is referred to as “test wafer Wl”. Instead of electrically insulating all the electrodes to be inspected (7) from each other, one of the 40 electrodes to be inspected in the integrated circuit (L) counted from the outermost electrode to be inspected (7) 393 integrated circuits (L) having the same configuration as the above-described test wafer W1 were formed on the wafer (6) except that every other two pieces were electrically connected to each other. Hereinafter, this wafer is referred to as “test wafer W2.”

[Production of frame plate]

According to the configuration shown in FIG. 26 and FIG. 27, an 8 inch diameter frame plate having 393 openings (11) formed corresponding to each electrode area to be inspected in the test wafer W1 according to the following conditions ( 10) was produced.

In the material of this frame plate (10) is Kovar (coefficient of linear thermal expansion 5 X 10- ⁶ Ζκ), its thickness is 60 m. Each of the openings (11) in the frame plate (10) has a horizontal dimension (horizontal direction in FIGS. 26 and 27) of 5.5 mm and a vertical dimension (vertical direction in FIGS. 26 and 27). Is 0.4 mm.

In addition, a circular air inflow hole (12) is formed at a central position between the vertically adjacent openings (11), and its diameter is lmm.

[Preparation of forming spacer 1]

Two spacers for forming an elastic anisotropic conductive film having a plurality of openings formed corresponding to the electrode area to be inspected in the test wafer W1 were produced under the following conditions. The material of these spacers is stainless steel (SUS304), and its thickness is 20 μm. Each of the spacer openings has a horizontal dimension of 7 mm and a vertical dimension force of 4 mm.

[Preparation of magnetic core particle [A]]

Using commercially available nickel particles (Westaim, “FC1000”), magnetic core particles [A] were prepared as follows.

By Nisshin Engineering air classifier Co., Ltd. "Turbo Classifier TC- 15N" nickel particles 2 kg, specific gravity of 8.9, air flow rate 2. 5 m ³ Zmin, the rotor speed is 1, 600 rpm, a classification point of 25 m, Nickel particle supply speed is 16gZmin Then, 1.8 kg of nickel particles were collected, and 1.8 kg of these nickel particles were collected. Specific gravity was 8.9, air volume was 2.5 m ³ Zmin, rotor speed was 3, OOOrpm, classification point. Was 10 m and the nickel particle supply rate was 14 gZmin, and 1.5 kg of nickel particles were collected.

Next, 120 g of nickel particles classified by an air classifier were further classified by a sonic sieve “SW-20AT type” manufactured by Ritsutsu Tsutsui Instruments Co., Ltd. Specifically, four sieves each with a diameter of 200 mm and opening diameters of 25 m, 20 m, 16 μm, and 8 μm are stacked in this order from the top in this order, and each sieve has a diameter of 2 mm. 10 g of ceramic ball was added, 20 g of nickel particles were added to the top sieve (opening diameter 25 μm), classification was performed at 55 Hz for 12 minutes and 125 Hz for 15 minutes, and the bottom sieve ( Nickel particles collected at an opening diameter of 8 μm were recovered. By performing this operation 25 times in total, 110 g of magnetic core particles [A] were prepared.

The obtained magnetic core particle [A] has a number average particle diameter of 10 m, a particle diameter variation coefficient of 10%, a BET specific surface area of 0.2 X 10 ³ m ² / kg, and a saturation magnetization of 0.6 Wb / kg. It was m ^2.

[Preparation of conductive particles [a]]

100 g of the magnetic core particle [A] was put into the treatment tank of the powder plating apparatus, and further 2 L of 0.32N hydrochloric acid aqueous solution was added and stirred to obtain a slurry containing the magnetic core particle [A]. The slurry was stirred at room temperature for 30 minutes to treat the magnetic core particles [A] with an acid, and then left to stand for 1 minute to precipitate the magnetic core particles [A], and the supernatant was removed.

Next, 2 L of pure water is added to the acid-treated magnetic core particles [A], stirred at room temperature for 2 minutes, and then allowed to stand for 1 minute to precipitate the magnetic core particles [A] and remove the supernatant. did. By repeating this operation two more times, the magnetic core particles [A] were washed.

Then, add 2 L of a gold plating solution with a gold content of 20 g / L to the magnetic core particles [A] that have been subjected to acid treatment and washing treatment, and raise the temperature in the treatment layer to 90 ° C. The slurry was prepared by stirring. In this state, the magnetic core particles [A] were replaced with gold while stirring the slurry. Thereafter, the slurry was left standing to cool to precipitate the particles, and the supernatant liquid was removed to prepare conductive particles [a] for the present invention.

To the conductive particles [a] obtained in this way, 2 L of pure water was added and stirred at room temperature for 2 minutes. Thereafter, the mixture was allowed to stand for 1 minute to precipitate the conductive particles [a], and the supernatant was removed. This operation was further repeated twice, and then 2 L of pure water heated to 90 ° C. was added and stirred, and the resulting slurry was filtered through a filter paper to collect the conductive particles [a]. The conductive particles [a] were dried by a dryer set at 90 ° C.

The obtained conductive particles [a] have a number average particle diameter of 12 m, a BET specific surface area of 0.15 X 10 ³ mVkg, a coating layer thickness t of ll lnm, (the mass of gold forming the coating layer) ) / (Conductive particle [a] total mass) value N was 0.3.

[Formation of one layer of conductive elastomer]

A conductive elastomer material was prepared by dispersing 400 parts by weight of the conductive particles [a] in 100 parts by weight of addition-type liquid silicone rubber. By applying this material for conductive elastomer to the surface of a releasable support plate (16) made of stainless steel having a thickness of 5 mm by screen printing, on the releasable support plate (16), A conductive elastomer material layer (21A) having a thickness of 0.15 mm was formed (see FIGS. 5 and 6).

Next, the conductive elastomer material layer (21A) is subjected to a curing treatment at 120 ° C for 1 hour while applying a magnetic field of 2 Tesla in the thickness direction by an electromagnet, thereby releasing the mold. A conductive elastomer layer (21B) having a thickness of 0.15 mm supported on the conductive support plate 16 was formed (see FIGS. 7 and 8).

[0091] In the above, the addition-type liquid silicone rubber used is a two-component type consisting of liquid A and liquid B each having a viscosity of 250 Pa's, and the cured product has a compression set of 5%, Durometer A with a hardness of 32 and a tear strength of 25 kNZm.

Here, the properties of the addition-type liquid silicone rubber and its cured product were measured as follows.

(i) The viscosity of addition-type liquid silicone rubber is 7 using a B-type viscometer measured at 23 ± 2 ° C.

(ii) The compression set of the cured silicone rubber was measured as follows.

The liquid A and liquid B in the two-component type addition type liquid silicone rubber were stirred and mixed at an equal ratio. Next, after pouring this mixture into a mold and subjecting the mixture to defoaming treatment under reduced pressure, a curing treatment is performed at 120 ° C for 30 minutes, resulting in a thickness of 12.7. A cylindrical body made of a cured silicone rubber having a diameter of 29 mm was prepared, and post-curing was performed on the cylindrical body at 200 ° C. for 4 hours. The cylindrical body thus obtained was used as a test piece, and compression set at 150 ± 2 ° C. was measured according to JIS K 6249.

(iii) The tear strength of the cured silicone rubber was measured as follows.

The addition type liquid silicone rubber was cured and post-cured under the same conditions as in (ii) above to produce a 2.5 mm thick sheet.

Talecent-shaped specimens were produced from this sheet by punching, and the bow I crack strength at 2 ° C for 23 persons was measured in accordance with JIS K 6249.

(iv) The durometer A hardness is set to 23 ± 2 ° C according to JIS K 6249 by stacking five sheets prepared in the same manner as in (m) above and using the resulting stack as a test piece. The value was measured.

[Formation of conductive part for connection]

A thin metal layer (17) made of copper with a thickness of 0.3 μm is applied to the surface of the conductive elastomer layer (21B) supported on the releasable support plate (16) by electroless plating. (See Fig. 9).

On this thin metal layer (17), 15720 openings (18a) each having a rectangular size of 60 / zm X 200 m are formed on the test wafer W1 by a photolithography technique. A resist layer (18) with a thickness of 25 μm was formed according to the pattern corresponding to the pattern (see Fig. 10).

Thereafter, the surface of the metal thin layer (17) was subjected to an electrolytic copper plating process to form a metal mask (19) made of copper having a thickness of 20 μm in the opening (18a) of the resist layer (18) ( (See Figure 11).

In this state, the conductive elastomer layer (21B), the metal thin layer (17), and the resist layer (18) are subjected to laser processing with a carbon dioxide laser device, thereby supporting the releasability. A conductive part for connection (21) of 15720 supported on the plate (16) is formed, and then a thin metal layer (17) and a metal mask (19) remaining from the surface of the conductive part for connection (21) are formed. In addition to peeling, the surface strength of the releasable support (16) is also reduced The remainder was mechanically peeled off (see Figure 12).

In the above, the laser processing conditions by the carbon dioxide laser device are as follows. In other words, a carbon dioxide laser processing machine “ML-605GTX” (manufactured by Mitsubishi Electric Corporation) was used as the equipment, and the laser beam diameter was 60 m and the laser output was 0.8 mJ. Laser processing was performed by irradiating 10 shots of the beam o

[Insulation part formation]

Prepare a releasable support plate (16A) made of stainless steel with a thickness of 5mm and place one molding spacer on the surface of this releasable support plate (16A). The frame plate (10) was positioned and arranged on the spacer for use, and the other forming spacer was positioned and arranged on the frame plate (10).

Next, an addition-type liquid silicone rubber used in the preparation of the conductive elastomer material is prepared, and the addition-type liquid silicone rubber is defoamed under reduced pressure, and then the addition-type liquid silicone rubber is screen-printed. By applying to the releasable support plate (16A), additional liquid silicone rubber is filled in the openings of each of the two molding spacers and the opening (11) of the frame plate (10). As a result, an insulating material layer (22A) was formed (see FIG. 13).

Next, the releasable support plate (16) on which a plurality of conductive portions (21) for connection are formed is overlaid on the releasable support plate (16A) on which the insulating layer material layer (22A) is formed. As a result, each of the conductive parts for connection (21) entered the insulating part material layer (22A) and brought into contact with the releasable support plate (16A) (see FIG. 14). After that, in this state, by applying a pressure of 1500 kgf to the releasable support plate (16) and the releasable support plate (16A), the conductive part for connection (21) is compressed in the thickness direction, and for the insulating part. The material layer (22A) is cured to form an integral part of the connecting conductive part (21) around each of the connecting conductive parts (21). An elastic anisotropic conductive film (20) was formed (see FIG. 15).

Then, the anisotropically conductive connector of the present invention is removed by releasing the moldable support plate (16), (16A) and the elastic anisotropically conductive film (20) and removing the molding spacer. Manufactured.

[0094] The elastic anisotropic conductive film in the anisotropic conductive connector obtained will be specifically described. Then, each elastic anisotropic conductive film has a horizontal dimension of 5.5 mm and a vertical dimension of 0.4 mm.

Each of the elastic anisotropic conductive films has 40 connecting conductive parts arranged in a row in the horizontal direction at a pitch of 120 m. Each of the connecting conductive parts has a horizontal dimension of 60 m and a vertical length of The dimension in the direction is 200 μm, the thickness is about 140 μm, and the thickness of the insulating part is 100 μm. Further, the thickness of the supported portion (one thickness of the bifurcated portion) in each elastic anisotropic conductive film is 20 μm.

Further, when the content ratio of the conductive particles in the connecting conductive portion in each of the elastic anisotropic conductive films was examined, the volume fraction was about 30% in all the connecting conductive portions.

[Fabrication of circuit board for inspection]

Alumina ceramics (coefficient of linear thermal expansion 4.8 X 10-so-K) is used as the substrate material, and a test circuit board with test electrodes formed according to the pattern corresponding to the pattern of the test electrode in Weno for testing and W1 is manufactured. did. The inspection circuit board has a rectangular shape with an overall dimension of ³ Ocm × 30 cm, and the inspection electrode has a lateral dimension force of ½ μm and a longitudinal dimension of 200 / zm. Hereinafter, this inspection circuit board is referred to as “inspection circuit board T”.

[0096] [Production of sheet-like probe]

Prepare a laminated material in which a copper layer with a thickness of 15 μm is stacked on one side of an insulating sheet made of polyimide with a thickness of 20 μm, and apply laser processing to the insulating sheet in this laminated material. Thus, 15720 through-holes each having a diameter of 40 μm and penetrating in the thickness direction of the insulating sheet were formed according to a pattern corresponding to the pattern of the electrode to be inspected in the test wafer W1. Next, the laminated material is subjected to photolithography and nickel plating treatment to form a short-circuit portion integrally connected to the copper layer in the through hole of the insulating sheet, and on the surface of the insulating sheet, A protruding surface electrode portion integrally connected to the short-circuit portion was formed. The diameter of the surface electrode portion was 50 m, and the height of the surface strength of the insulating sheet was 20 m. Thereafter, the copper layer in the laminated material is subjected to a photo-etching process and a part thereof is removed to form a 70 m × 210 m rectangular back electrode part, and further, the front electrode part and the back electrode part An electrode structure is formed by applying gold plating to the sheet-like probe. Manufactured. Hereinafter, this sheet-like probe is referred to as “sheet-like probe M”.

[Evaluation of anisotropic conductive connector]

(1) Test 1:

Place the test wafer W1 on the test stand, and place the anisotropic conductive connector on the test wafer W1 so that each of the conductive parts for connection is located on the electrode to be inspected on the test wafer W1. Arranged together. Next, the inspection circuit board T is aligned and fixed on the anisotropic conductive connector so that each of the inspection electrodes is positioned on the connecting conductive portion of the anisotropic conductive connector. The circuit board T was pressed downward with a load of 160 kg.

At room temperature (25 ° C), a sequential voltage is applied to each of the inspection electrodes on the inspection circuit board T, and the electrical resistance between the inspection electrode to which the voltage is applied and the inspection electrode adjacent thereto is applied. Was measured as the electrical resistance between the conductive parts for connection in the anisotropic conductive connector (hereinafter referred to as “insulation resistance”), and the number of conductive part pairs for connection having an insulation resistance of 5 Ω or less was determined. Here, when the insulation resistance between the conductive parts for connection is 5Ω or less, it may be difficult to actually use this in the electrical inspection of the integrated circuit formed on the wafer.

The results are shown in Table 1 below.

[0098] (2) Test 2:

The test wafer W2 is placed on a test stand equipped with an electric heater, and an anisotropic conductive connector is placed on the test wafer W1 so that each of the conductive portions for connection is placed on the test electrode of the test wafer W2. The inspection circuit board T is aligned on the anisotropic conductive connector so that each of the inspection electrodes is positioned on the conductive portion for connection of the anisotropic conductive connector. Furthermore, the circuit board for inspection T was pressed downward with a load of 32 kg (the load applied to each conductive part for connection was about 2 g on average). Then, at room temperature (25 ° C), 15720 test electrodes on the test circuit board T are electrically connected to each other via the anisotropic conductive connector, the test weno, and W1. In addition, the electrical resistance between the two test electrodes is measured sequentially, and the half of the measured electrical resistance value is calculated as the electrical resistance of the connecting conductive part in the anisotropic conductive connector (hereinafter referred to as "Conduction resistance" t. ) And the number of conductive parts for connection having a conduction resistance of 0.5 Ω or more was determined. The above operation is referred to as “operation (1)”.

Next, the load to pressurize the inspection circuit board T is changed to 126 kg (the average load applied to each conductive part for connection is about 8 g), and then the test bench is heated to 125 ° C and the temperature of the test bench is After being stabilized, it was left in this state for 1 hour. The above operation is referred to as “operation (2)”. Next, the test table was cooled to room temperature, and then the pressure applied to the inspection circuit board T was released. The above operation is referred to as “operation (3)”.

Then, the above operation (1), operation (2) and operation (3) were performed as one cycle, and the operation was performed continuously for a total of 500 sites.

As described above, it is difficult to actually use the conductive part having a conduction resistance of 0.5 Ω or more in the electrical inspection of the integrated circuit formed on the wafer.

The results are shown in Table 2 below.

[0099] (3) Test 3:

On the test wafer W2 placed on the test bench, the sheet-like probe M is positioned so that its surface electrode portion is located on the electrode to be inspected on the test wafer W2, and the sheet-like probe M is placed on the test wafer W2. An anisotropic conductive connector is placed so that the conductive part for connection is positioned on the back electrode part of the sheet-like probe M, and the inspection circuit board T is loaded downward with a load of 126 kg (for connection The conductive resistance of the connecting conductive part was measured in the same manner as in Test 2 above, except that the load applied to each conductive part was about 8 g on average, and the conductive resistance was 0.5 Ω or more. The number of the conductive parts for connection which were was calculated | required.

The above results are shown in Table 3 below.

[0100] <Comparative Example 1>

By using the same frame plate as in Example 1 and forming an elastic anisotropic conductive film having the following specifications in each of the openings of the frame plate according to the method described in Japanese Patent Application Laid-Open No. 2002-334732, a comparatively different anisotropic plate is formed. A directionally conductive connector was produced.

The elastic anisotropic conductive film in the comparative anisotropic conductive connector obtained will be described. Each of the elastic anisotropic conductive films has a lateral dimension of 5.5 mm and a longitudinal dimension of 0.4. mm.

Further, when the content ratio of the conductive particles in the conductive portion for connection in each of the elastic anisotropic conductive films was examined, the volume fraction was about 20%.

The comparative anisotropic conductive connector was evaluated in the same manner as in Example 1. The results are shown in Tables 1 to 3.

[0101] [Table 1]

[0102] [Table 2]

[0103] [Table 3]

[0104] As is apparent from the results of Tables 1 to 3, the anisotropic conductive connector according to Example 1 For example, even if the pitch of the conductive portions for connection in the elastic anisotropic conductive film is small, the conductive portion for connection has good conductivity, and sufficient insulation is provided between the adjacent conductive portions for connection. Even when used repeatedly in a high-temperature environment, all electrical power is stably maintained even against environmental changes such as thermal history due to temperature changes. It was confirmed that good conductivity was maintained over a long period in the conductive part for connection.

The reason why such characteristics are obtained is considered to be as follows.

(1) After forming the conductive part for connection on the releasable support plate, the insulating part is made to penetrate into the insulating part material layer and the insulating part material layer is cured. Therefore, no conductive particles are present in the insulating portion, and therefore an insulating portion having sufficient insulating properties can be obtained with certainty.

(2) Since the conductive elastomer layer is laser processed to form the connection conductive portion, the variation in the content ratio of the conductive particles in each connection conductive portion is extremely small. Thus, good and stable conductivity can be obtained.

(3) Since each elastic anisotropic conductive film has a small area and a small absolute amount of thermal expansion in the surface direction, the thermal expansion in the surface direction of the elastic anisotropic conductive film is reliably controlled by the frame plate. . However, the thermal expansion of the anisotropically conductive connector as a whole depends on the thermal expansion of the materials that make up the frame plate. As a result of preventing displacement from the electrode, a good electrical connection state is stably maintained.

On the other hand, in the anisotropic conductive connector of Comparative Example 1, conductive particles remain in the insulating portion, so there are connecting conductive portion pairs with low insulation resistance. Due to the large variation in the content ratio of conductive particles, this is a high temperature environment! / When repeated use, some conductive parts for connection show a decrease in conductivity.

Claims

The scope of the claims

[1] A frame plate in which a plurality of openings are formed corresponding to an electrode region where an electrode to be inspected in all or a part of an integrated circuit formed on a wafer to be inspected, and an opening of the frame plate A plurality of elastic anisotropic conductive films arranged so as to cover each of the plurality of elastic anisotropic conductive films, each of the elastic anisotropic conductive films arranged corresponding to the electrodes to be inspected in the integrated circuit formed on the wafer. A plurality of connecting conductive parts extending in the thickness direction, wherein the elastic polymer substance contains conductive particles exhibiting magnetism, and an insulating part made of an elastic polymer substance that insulates the connecting conductive parts from each other A method for manufacturing an anisotropic conductive connector for wafer inspection, comprising:

For each of the connecting conductive portions formed on the releasable support plate, the insulating portion made of a liquid polymer material forming material that is cured to become an elastic polymer material is formed so as to close the opening of the frame plate. A method for producing an anisotropic conductive connector for wafer inspection, comprising the step of forming an insulating portion by intrusion into a material layer and curing the insulating material layer in this state.

[2] The method for producing an anisotropic conductive connector for wafer inspection according to [1], wherein the laser processing is performed by a carbon dioxide laser or an ultraviolet laser.

[3] A metal mask is formed on the surface of the conductive elastomer layer in accordance with the pattern of the conductive part for connection to be formed, and then the conductive elastomer layer is laser processed to form a plurality of conductive parts for connection. The method for producing an anisotropic conductive connector for wafer inspection according to claim 1 or 2, wherein:

[4] The method for producing an anisotropic conductive connector for wafer inspection according to [3], wherein the metal mask is formed by subjecting the surface of one layer of the conductive elastomer to a plating treatment.

[5] A thin metal layer is formed on the surface of the conductive elastomer layer, a resist layer is formed on the surface of the thin metal layer according to a specific pattern, and the opening of the resist layer in the thin metal layer is formed. Force the metal mask by polishing the surface of the exposed part 4. The method for producing an anisotropic conductive connector for wafer inspection according to claim 3, wherein: is formed.

[6] A magnetic field is applied in the thickness direction to a conductive elastomer material layer in which conductive particles exhibiting magnetism are contained in a liquid elastomer material that is cured to become an elastic polymer substance. The anisotropic conductive material for wafer inspection according to any one of claims 1 to 5, wherein a conductive elastomer layer is formed by curing the material layer for the conductive elastomer. A method for manufacturing a connector.

[7] as the frame plate, anisotropically conductive connector for wafer inspection according to any one of claims 1 to 6 you, characterized in that the linear thermal expansion coefficient used the following 3 X 10- ⁵ ZK The manufacturing method.

[8] An anisotropic conductive connector for wafer inspection, which is obtained by the manufacturing method according to any one of claims 1 to 7.

[9] For each of a plurality of integrated circuits formed on a wafer, a probe member used to perform electrical inspection of the integrated circuit in the state of the wafer,

An inspection circuit board having inspection electrodes formed on the surface according to a pattern corresponding to the pattern of the electrode to be inspected in the integrated circuit formed on the wafer to be inspected, and disposed on the surface of the inspection circuit board. Item 9. A probe member comprising the anisotropic conductive connector for wafer inspection according to Item 8.

[10] On the anisotropic conductive connector, an insulating sheet, and a plurality of electrode structures extending through the insulating sheet in the thickness direction and arranged according to a pattern corresponding to the pattern of the electrode to be inspected The probe member according to claim 9, wherein a sheet-like probe is disposed.

[11] In a wafer inspection apparatus that performs electrical inspection of a plurality of integrated circuits formed on a wafer in a wafer state,

A wafer inspection comprising the probe member according to claim 9 or 10, wherein electrical connection to an integrated circuit formed on a wafer to be inspected is achieved via the probe member. apparatus.

[12] Each of the plurality of integrated circuits formed on the wafer is defined in claim 9 or claim 10. A wafer inspection method comprising: electrically connecting to a tester via a probe member; and performing an electrical inspection of an integrated circuit formed on the wafer.