JP2006098395A - Anisotropic conductive connector for wafer inspection, production method and application therefor - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a wafer inspection-use anisotropic conductive connector capable of being produced at a low cost and positively ensuring a required electrical connection, even in the case electrodes to be inspected of the wafer are disposed at small pitches and high density, and to provide a production method and applications therefor. <P>SOLUTION: The connector comprises a frame plate formed with a plurality of openings, corresponding to electrode regions where the electrodes to be inspected of the wafer are disposed; and a plurality of elastic anisotropic conductive films so disposed as to close the respective openings. The elastic anisotropic conductive films have a plurality of connecting conductive units disposed in conjunction with the electrodes to be inspected, extending in the thickness direction and being mutually insulated by insulating units, and can be obtained by laser-processing a conductive elastomer layer that is supported on a releasing type support plate to form a plurality of connecting conductive units, by making the respective connecting conductive units immerse in a liquid insulating unit-use material layer formed so as to close the openings of the frame plate, and by hardening the insulating material layer. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to an anisotropic conductive connector for wafer inspection used for conducting electrical inspection of a plurality of integrated circuits formed on a wafer in a wafer state, a method for manufacturing the same, and an anisotropic conductive connector for wafer inspection. The present invention relates to a wafer inspection probe member, a wafer inspection device including the probe member, and a wafer inspection method using the probe member.

In general, in the manufacturing process of a semiconductor integrated circuit device, a large number of integrated circuits are formed on a wafer made of, for example, silicon, and then each of these integrated circuits has a defect by inspecting basic electrical characteristics. A probe test is performed to select the integrated circuit. Next, the semiconductor chip is formed by cutting the wafer, and the semiconductor chip is housed in an appropriate package and sealed. Further, each packaged semiconductor integrated circuit device is subjected to a burn-in test for selecting a semiconductor integrated circuit device having a potential defect by inspecting electrical characteristics in a high temperature environment.
In such an electrical inspection of an integrated circuit such as a probe test or a burn-in test, a probe member is used to electrically connect each of the electrodes to be inspected in the inspection object to a tester. Such a probe member is composed of an inspection circuit board on which an inspection electrode is formed according to a pattern corresponding to the pattern of the electrode to be inspected, and an anisotropic conductive elastomer sheet disposed on the inspection circuit board. It has been known.

As such an anisotropic conductive elastomer sheet, those having various structures have been conventionally known. For example, Patent Document 1 discloses an anisotropic conductive elastomer sheet obtained by uniformly dispersing metal particles in an elastomer. (Hereinafter referred to as “dispersed anisotropic conductive elastomer sheet”) is disclosed, and Patent Document 2 and the like disclose that the conductive magnetic particles are distributed non-uniformly in the elastomer, thereby increasing the thickness direction. An anisotropic conductive elastomer sheet (hereinafter, referred to as an “unevenly anisotropic conductive elastomer sheet”) is disclosed, in which a large number of conductive portions extending in the direction and insulating portions that insulate them from each other are formed. Further, Patent Document 3 discloses an unevenly distributed anisotropic conductive elastomer sheet in which a step is formed between the surface of the conductive portion and the insulating portion.
Among these anisotropically conductive elastomer sheets, the unevenly anisotropic anisotropic conductive elastomer sheet has a conductive portion formed according to a pattern corresponding to the pattern of the electrode to be inspected of the integrated circuit to be inspected. Compared to the directionally conductive elastomer sheet, the electrical connection between the electrodes can be achieved with high reliability even for an integrated circuit or the like in which the arrangement pitch of the electrodes to be inspected, that is, the distance between the centers of adjacent electrodes to be inspected is small. This is advantageous. Therefore, an unevenly distributed anisotropic conductive elastomer sheet is used in a probe test or burn-in test of a semiconductor integrated circuit device in which the pitch of electrodes to be inspected is small.

Thus, in a probe test performed on an integrated circuit formed on a wafer, the wafer is conventionally divided into a plurality of areas in which, for example, 16 or 32 integrated circuits are formed among many integrated circuits. A method is adopted in which a probe test is collectively performed on all integrated circuits formed in this area, and a probe test is sequentially performed on integrated circuits formed in other areas. In recent years, in order to improve the inspection efficiency and reduce the inspection cost, for example, 64, 124, or all of the integrated circuits out of a large number of integrated circuits formed on the wafer are collectively subjected to a probe test. It is requested.
On the other hand, in the burn-in test, the integrated circuit device to be inspected is very small and inconvenient to handle. Therefore, it is long to perform electrical inspection of many integrated circuit devices individually. Time is required, which makes the inspection cost considerably higher. For these reasons, a WLBI (Wafer Level Burn-in) test has been proposed in which a burn-in test is performed on a large number of integrated circuits formed on a wafer in a wafer state.

However, if the wafer to be inspected is a large one having a diameter of, for example, 8 inches or more and the number of electrodes to be inspected is, for example, 5000 or more, particularly 10,000 or more, the wafer to be inspected in each integrated circuit. Since the pitch of the inspection electrode is extremely small, there are the following problems when using an unevenly distributed anisotropic conductive elastomer sheet in a probe test or a WLBI test.
(1) In order to inspect a wafer having a diameter of, for example, 8 inches (about 20 cm), it is necessary to use an unevenly distributed anisotropic conductive elastomer sheet having a diameter of about 8 inches. However, such an unevenly anisotropic anisotropic conductive elastomer sheet has a considerably large area as a whole, but each conductive part is fine, and the surface of the conductive part occupying the unevenly anisotropic anisotropic conductive elastomer sheet surface. Since the area ratio is small, it is extremely difficult to reliably manufacture the unevenly anisotropic anisotropic conductive elastomer sheet. Therefore, in the production of the anisotropic conductive elastomer sheet, the production yield of the anisotropic conductive elastomer sheet increases as a result of the extremely low yield, which in turn increases the inspection cost.
(2) The unevenly distributed anisotropic conductive elastomer sheet needs to be held and fixed with a specific positional relationship with the circuit board for inspection and the wafer to be inspected. However, since the anisotropic conductive elastomer sheet is flexible and easily deformed and has low handleability, when performing electrical connection to the inspection target electrode of the wafer to be inspected, It is extremely difficult to align and hold and fix the uneven distribution type anisotropic conductive elastomer sheet.
(3) The linear thermal expansion coefficient of the material constituting the wafer, such as silicon, is about 3.3 × 10 ⁻⁶ / K, while the material constituting the anisotropic conductive elastomer sheet, such as silicone rubber, is It is about 2.2 × 10 ⁻⁴ / K. Thus, for example, at 25 ° C., when each wafer and anisotropic conductive elastomer sheet having a diameter of 20 cm are heated from 25 ° C. to 125 ° C., the change in wafer diameter is theoretically 0.0066 cm. However, the change in the diameter of the anisotropically conductive elastomer sheet reaches 0.44 cm. Thus, the coefficient of thermal expansion differs greatly between the material (for example, silicon) constituting the integrated circuit device to be inspected and the material (for example, silicone rubber) constituting the unevenly distributed anisotropic conductive elastomer sheet, In the burn-in test, even if the required alignment and holding / fixing of the wafer and the anisotropically anisotropic conductive elastomer sheet have been realized once, if the thermal history due to temperature change is received, As a result of positional displacement between the conductive portion of the conductive elastomer sheet and the electrode to be inspected of the integrated circuit device, it is difficult to maintain a stable connection state by changing the electrical connection state.

In order to solve the above-described problem, a frame plate having a plurality of openings formed corresponding to electrode regions where electrodes to be inspected of an integrated circuit are formed on a wafer to be inspected, and each of the openings of the frame plate are closed. An anisotropic conductive connector comprising a plurality of elastic anisotropic conductive films arranged in this manner has been proposed (see, for example, Patent Document 4).
According to such an anisotropic conductive connector, the following effects can be obtained.
(1) Each of the openings formed in the frame plate has a size corresponding to the electrode region of the integrated circuit in the wafer to be inspected. Therefore, the elastic anisotropic conductive film disposed in each of the openings has a size Therefore, it is easy to form individual elastic anisotropic conductive films.
(2) Since each of the elastic anisotropic conductive films is supported by the frame plate, the elastic anisotropic conductive film is not easily deformed and easy to handle. Also, by forming a positioning mark (for example, a hole) in the frame plate in advance, In the electrical connection operation, alignment and holding / fixing with respect to the integrated circuit device can be easily performed.
(3) Since the elastic anisotropic conductive film having a small size has a small absolute amount of thermal expansion even when subjected to a thermal history, the thermal expansion of the elastic anisotropic conductive film is restricted by the frame plate, and the anisotropic conductive film The thermal expansion of the entire connector depends on the thermal expansion of the material that makes up the frame plate. However, as a result of preventing the displacement between the conductive portion of the anisotropic conductive connector and the electrode to be inspected on the wafer, a good electrical connection state is stably maintained.

And such an anisotropically conductive connector is manufactured as follows.
A mold for forming an elastic anisotropic conductive film comprising an upper mold 80 and a lower mold 85 paired therewith as shown in FIG. 28 is prepared. Each of the upper mold 80 and the lower mold 85 in the mold includes a plurality of ferromagnetic layers arranged on the substrates 81 and 86 according to a pattern corresponding to the pattern of the conductive portion of the anisotropic conductive elastomer sheet to be molded. 82 and 87, and nonmagnetic layers 83 and 88 arranged at locations other than the locations where these ferromagnetic layers 82 and 87 are formed, and the ferromagnetic layers 82 and 87 and the nonmagnetic layers are provided. The body layers 83 and 88 form a molding surface. The upper mold 80 and the lower mold 85 are arranged such that the ferromagnetic layer 82 of the upper mold 80 and the corresponding ferromagnetic layer 87 of the lower mold 85 face each other.
In such a mold, as shown in FIG. 29, a frame plate 90 in which an opening 91 is formed corresponding to an electrode region in a wafer to be inspected is aligned and disposed, and a high elasticity is obtained by a curing process. A molding material layer 95A in which conductive particles P exhibiting magnetism are dispersed in a polymer substance-forming material that is a molecular substance is formed so as to close each opening 91 of the frame plate 90. Here, the conductive particles P contained in the molding material layer 95A are in a state of being dispersed in the molding material layer 95A.

  Then, for example, a pair of electromagnets are arranged on the upper surface of the upper die 80 and the lower surface of the lower die 85 and are operated, so that the molding material layer 95A has the ferromagnetic layer 82 of the upper die 80 and the same. In a portion between the corresponding lower die 85 and the ferromagnetic layer 87, that is, a portion serving as a conductive portion, a magnetic field having a stronger intensity than the other portions is applied in the thickness direction of the molding material layer 95A. As a result, the conductive particles P dispersed in the molding material layer 95A correspond to the portion of the molding material layer 95A where a high-intensity magnetic field is applied, that is, the ferromagnetic layer 82 of the upper mold 80. The lower mold 85 is gathered at a portion between the lower die 85 and the ferromagnetic layer 87, and is further aligned so as to be aligned in the thickness direction of the molding material layer 95A. In this state, by performing a curing process on the molding material layer 95A, as shown in FIG. 30, a plurality of conductive portions 96 contained in a state where the conductive particles P are aligned in the thickness direction, and these An elastic anisotropic conductive film 95 comprising an insulating portion 97 that insulates the conductive portions 96 from each other is molded in a state where the peripheral edge portion is supported by the opening edge portion of the frame plate 90, and thus an anisotropic conductive connector. Is manufactured.

However, such a manufacturing method has the following problems.
When electrical inspection is performed on a wafer in which electrodes to be inspected are arranged at a high density with a small pitch, it is necessary to use anisotropic conductive connectors in which the pitch of the conductive portions is small and arranged at a high density. Thus, in manufacturing such an anisotropic conductive connector, it is naturally necessary to use the upper mold 80 and the lower mold 85 in which the ferromagnetic layers 82 and 87 are arranged at a very small pitch. .
However, when such an upper die 80 and lower die 85 are used to form the elastic anisotropic conductive film 95 as described above, the ferromagnetic materials adjacent to each other in each of the upper die 80 and the lower die 85. Since the separation distance between the layers 82 and 87 is small, as shown in FIG. 31, the direction from the certain ferromagnetic layer 82a in the upper mold 80 to the corresponding ferromagnetic layer 87a in the lower mold 85 (arrow) X), for example, a direction from the ferromagnetic layer 82a of the upper mold 80 toward the ferromagnetic layer 87b adjacent to the corresponding ferromagnetic layer 87a of the lower mold 85 (indicated by an arrow Y), Alternatively, the magnetic field also acts in a direction from the ferromagnetic layer 82b of the upper mold 80 toward the ferromagnetic layer 87a adjacent to the corresponding ferromagnetic layer 87b of the lower mold 85. Therefore, in the molding material layer 95A, it is difficult to gather the conductive particles P in a portion located between the ferromagnetic layer 82a of the upper mold 80 and the corresponding ferromagnetic layer 87a of the lower mold 85. Thus, the conductive particles P also gather at a portion located between the ferromagnetic layer 82a of the upper mold 80 and the ferromagnetic layer 87b of the lower mold 85, and the conductive particles P are formed into the molding material layer. It becomes difficult to sufficiently orient in the thickness direction of 95A, and as a result, an anisotropic conductive connector having a desired conductive portion and insulating portion cannot be obtained.
Further, in forming the elastic anisotropic conductive film, a special mold including the upper mold 80 and the lower mold 85 is necessary as described above. This mold is manufactured individually according to the wafer to be inspected, and because the manufacturing process is complicated, the manufacturing cost of the anisotropic conductive connector becomes extremely high. As a result, the inspection cost of the wafer increases.

JP 51-93393 A Japanese Patent Laid-Open No. 53-147772 JP-A-61-250906 JP 2002-334732 A

The present invention has been made based on the above circumstances, and a first object of the present invention is that electrodes to be inspected on a wafer to be inspected are arranged at a high density with a small pitch. However, it is an object of the present invention to provide an anisotropic conductive connector for wafer inspection, which can reliably achieve a required electrical connection for the wafer, and can be manufactured at a low cost, and a method for manufacturing the same.
The second object of the present invention is to reliably achieve the required electrical connection for the wafer even if the electrodes to be inspected in the wafer to be inspected are arranged with a small pitch and a high density. It is another object of the present invention to provide a probe member for wafer inspection that can be manufactured at a low cost.
A third object of the present invention is to provide a wafer inspection apparatus and wafer inspection method for performing electrical inspection of a plurality of integrated circuits formed on a wafer in the state of a wafer using the probe member. .

The method for manufacturing an anisotropic conductive connector for wafer inspection according to the present invention includes a plurality of openings corresponding to electrode regions in which electrodes to be inspected are arranged in all or a part of integrated circuits formed on a wafer to be inspected. And a plurality of elastic anisotropic conductive films arranged so as to close each of the openings of the frame plate, and each of the elastic anisotropic conductive films is an integrated circuit formed on the wafer. A plurality of connecting conductive parts extending in the thickness direction, which are arranged corresponding to the electrodes to be inspected and containing conductive particles exhibiting magnetism in the elastic polymer substance, and these connecting conductive parts are mutually connected A method of manufacturing an anisotropic conductive connector for wafer inspection having an insulating part made of an elastic polymer material for insulation,
A plurality of connections can be made on the releasable support plate by laser processing a conductive elastomer layer in which conductive particles exhibiting magnetism are contained in an elastic polymer material supported on the releasable support plate. Forming a conductive part,
For each of the connecting conductive parts formed on the releasable support plate, for the insulating part made of a liquid polymer substance forming material that is cured and becomes an elastic polymer substance so as to close the opening of the frame board It has a step of forming an insulating portion by intruding into the material layer and curing the insulating material layer in this state.

In the method for producing an anisotropic conductive connector for wafer inspection according to the present invention, the laser processing is preferably performed by a carbon dioxide laser or an ultraviolet laser.
Also, a plurality of conductive portions for connection are formed by forming a metal mask on the surface of the conductive elastomer layer according to the pattern of the conductive portion for connection to be formed, and then laser processing the conductive elastomer layer. Is preferred.
Moreover, it is preferable to form a metal mask by plating the surface of the conductive elastomer layer.
Further, a thin metal layer is formed on the surface of the conductive elastomer layer, a resist layer having an opening formed in accordance with a specific pattern is formed on the surface of the thin metal layer, and exposed from the opening of the resist layer in the thin metal layer. It is preferable that a metal mask is formed by plating the surface of the portion.
Further, in the method for producing an anisotropic conductive connector for wafer inspection according to the present invention, the conductive elastomer for conductive elastomer, wherein the liquid elastomer material that is cured to become an elastic polymer substance contains magnetic conductive particles. A conductive elastomer layer can be formed by applying a magnetic field to the material layer in the thickness direction and curing the conductive elastomer material layer.
In the method for manufacturing an anisotropic conductive connector for wafer inspection according to the present invention, it is preferable to use a frame plate having a coefficient of linear thermal expansion of 3 × 10 ⁻⁵ / K or less.

  The anisotropic conductive connector for wafer inspection according to the present invention is obtained by the above manufacturing method.

The probe member of the present invention is a probe member used for performing electrical inspection of a plurality of integrated circuits formed on a wafer in the state of the wafer,
An inspection circuit board having an inspection electrode formed on the surface according to a pattern corresponding to the pattern of the electrode to be inspected in the integrated circuit formed on the wafer to be inspected, and the above-described circuit board disposed on the surface of the inspection circuit board An anisotropic conductive connector for wafer inspection is provided.

  In the probe member of the present invention, on the anisotropic conductive connector for wafer inspection, an insulating sheet and the insulating sheet extend through the thickness direction and are arranged according to a pattern corresponding to the pattern of the electrode to be inspected. In addition, a sheet-like probe including a plurality of electrode structures may be disposed.

A wafer inspection apparatus according to the present invention is a wafer inspection apparatus that performs electrical inspection of a plurality of integrated circuits formed on a wafer in a wafer state.
The probe member is provided, and electrical connection to the integrated circuit formed on the wafer to be inspected is achieved through the probe member.

  In the wafer inspection method of the present invention, each of the plurality of integrated circuits formed on the wafer is electrically connected to the tester via the probe member, and the integrated circuit formed on the wafer is electrically inspected. It is characterized by doing.

According to the method for manufacturing an anisotropic conductive connector for wafer inspection according to the present invention, a conductive portion for connection is formed by forming a conductive portion for connection by laser processing the conductive elastomer layer. Can be definitely obtained. Moreover, after forming the conductive part for connection on the releasable support plate, the conductive part for connection is infiltrated into the material layer for the insulating part, and the insulating part material layer is cured to cure the insulating part. Since it forms, the insulating part which does not have electroconductive particle at all can be obtained reliably. In addition, it is not necessary to use a special mold in which a large number of ferromagnetic layers that have been used for manufacturing a conventional anisotropically conductive connector are arranged.
Therefore, according to the anisotropic conductive connector for wafer inspection of the present invention obtained by such a method, even if the electrodes to be inspected on the wafer to be inspected are arranged with a small pitch and a high density. The required electrical connection can be reliably achieved for each of the electrodes to be inspected and can be manufactured at a low cost.

  Since the probe member according to the present invention includes the anisotropic conductive connector for wafer inspection described above, the electrodes to be inspected on the wafer to be inspected are arranged at a high density with a small pitch. However, the required electrical connection can be reliably achieved for the wafer, and the wafer can be manufactured at a low cost.

  According to the wafer inspection apparatus and the wafer inspection method according to the present invention, since the probe member is used, even if the electrodes to be inspected on the wafer to be inspected are arranged with a small pitch and a high density, The required electrical inspection can be reliably performed on the wafer.

Hereinafter, embodiments for carrying out the present invention will be described in detail.
[Anisotropic conductive connector]
FIG. 1 is a plan view showing an example of an anisotropic conductive connector for wafer inspection according to the present invention, FIG. 2 is an enlarged plan view showing a part of the anisotropic conductive connector shown in FIG. 1, and FIG. FIG. 4 is an enlarged plan view showing an elastic anisotropic conductive film in the anisotropic conductive connector shown in FIG. 1, and FIG. 4 is an explanatory view showing an enlarged elastic anisotropic conductive film in the anisotropic conductive connector shown in FIG. It is sectional drawing.

  The anisotropic conductive connector for wafer inspection shown in FIG. 1 (hereinafter, also simply referred to as “anisotropic conductive connector”) performs, for example, an electrical inspection of each integrated circuit on a wafer on which a plurality of integrated circuits are formed. As shown in FIG. 2, the frame plate 10 has a plurality of openings 11 (shown by broken lines). The opening 11 of the frame plate 10 is formed so as to correspond to the electrode region where the electrodes to be inspected are arranged in all the integrated circuits formed on the wafer to be inspected. A plurality of elastic anisotropic conductive films 20 having conductivity in the thickness direction are arranged on the frame plate 10 so as to close the one opening 11 and supported by the opening edge. Further, in the frame plate 10 in this example, when a pressure reducing means is used in a wafer inspection apparatus described later, air between the anisotropic conductive connector and a member adjacent thereto is circulated. The air circulation hole 12 is formed, and further, a positioning hole 13 for positioning the wafer to be inspected and the circuit board for inspection is formed.

The elastic anisotropic conductive film 20 is made of an elastic polymer material, and is disposed so as to be positioned in the opening 11 of the frame plate 10 as shown in FIG. A plurality of connecting conductive portions 21 extending in the direction), and insulating portions 22 that are formed around each of the connecting conductive portions 21 and insulate each of the connecting conductive portions 21 from each other. . Each of the connecting conductive portions 21 is arranged according to a pattern corresponding to the pattern of the electrode to be inspected in the integrated circuit formed on the wafer to be inspected, and is electrically connected to the electrode to be inspected in the inspection of the wafer. Is.
As shown in FIG. 4, the conductive particles 21 exhibiting magnetism are densely contained in the connection conductive portion 21 of the elastic anisotropic conductive film 20 in an aligned state in the thickness direction. On the other hand, the insulating part 22 does not contain the conductive particles P at all.
Further, in the illustrated example, each of the connecting conductive portions 21 is formed so as to protrude from one surface of the insulating portion 22, whereby the protruding portion related to the connecting conductive portion 21 is formed on one surface of the elastic anisotropic conductive film 20. 23 is formed.

Although the thickness of the frame board 10 changes with materials, it is preferable that it is 25-600 micrometers, More preferably, it is 40-400 micrometers.
When this thickness is less than 25 μm, the strength required when using an anisotropically conductive connector is not obtained, the durability tends to be low, and the shape of the frame plate 10 is maintained. Thus, the handleability of the anisotropically conductive connector is low. On the other hand, when the thickness exceeds 600 μm, the elastic anisotropic conductive film 20 formed in the opening 11 becomes excessively thick and it is difficult to obtain good conductivity in the connecting conductive portion 21. It may become.
The shape and size in the surface direction of the opening 11 of the frame plate 10 are designed according to the size, pitch and pattern of the electrodes to be inspected of the wafer to be inspected.

The material constituting the frame plate 10 is not particularly limited as long as the frame plate 10 is not easily deformed and has a rigidity that allows the shape to be stably maintained. For example, a metal material or a ceramic material is used. Various materials such as a resin material can be used. When the frame plate 10 is made of, for example, a metal material, an insulating coating may be formed on the surface of the frame plate 10.
Specific examples of the metal material constituting the frame plate 10 include metals such as iron, copper, nickel, chromium, cobalt, magnesium, manganese, molybdenum, indium, lead, palladium, titanium, tungsten, aluminum, gold, platinum, and silver. Or the alloy or alloy steel which combined 2 or more types of these is mentioned.
Specific examples of the resin material constituting the frame plate 10 include a liquid crystal polymer and a polyimide resin.

When the anisotropic conductive connector is used for the WLBI test, it is preferable to use a material having a linear thermal expansion coefficient of 3 × 10 ⁻⁵ / K or less as the material constituting the frame plate 10, more preferably. −1 × 10 ⁻⁷ to 1 × 10 ⁻⁵ / K, particularly preferably 1 × 10 ⁻⁶ to 8 × 10 ⁻⁶ / K.
Specific examples of such materials include Invar type alloys such as Invar, Elinvar type alloys such as Elinvar, magnetic metal alloys such as Super Invar, Kovar, and 42 alloy, or alloy steel.

The total thickness of the elastic anisotropic conductive film 20 (thickness in the connecting conductive portion 21 in the illustrated example) is preferably 50 to 2000 μm, more preferably 70 to 1000 μm, and particularly preferably 80 to 500 μm. If this thickness is 50 μm or more, the elastic anisotropic conductive film 20 having sufficient strength can be obtained reliably. On the other hand, if the thickness is 2000 μm or less, the connecting conductive portion 21 having the required conductive characteristics can be obtained with certainty.
As for the protrusion height of the protrusion part 23, it is preferable that the sum total is 10% or more of the thickness in the said protrusion part 23, More preferably, it is 20% or more. By forming the protruding portion 23 having such a protruding height, the connecting conductive portion 21 is sufficiently compressed with a small applied pressure, so that good conductivity can be reliably obtained.
Moreover, it is preferable that the protrusion height of the protrusion part 23 is 100% or less of the shortest width or diameter of the said protrusion part 23, More preferably, it is 70% or less. By forming the projecting portion 23 having such a projecting height, the projecting portion 23 is not buckled when pressed, and thus the desired conductivity can be reliably obtained.

As the elastic polymer material forming the elastic anisotropic conductive film 20, a heat-resistant polymer material having a crosslinked structure is preferable. Various materials can be used as the curable polymeric substance-forming material that can be used to obtain such a crosslinked polymeric substance, but liquid silicone rubber is preferred.
The liquid silicone rubber may be an addition type or a condensation type, but an addition type liquid silicone rubber is preferred. This addition-type liquid silicone rubber is cured by a reaction between a vinyl group and a Si—H bond, and is a one-pack type (one-component type) made of polysiloxane containing both a vinyl group and a Si—H bond. And two-component type (two-component type) composed of a polysiloxane containing a vinyl group and a polysiloxane containing a Si-H bond. In the present invention, a two-component addition-type liquid silicone is used. It is preferable to use rubber.

As the addition type liquid silicone rubber, those having a viscosity at 23 ° C. of 100 to 1,250 Pa · s are preferably used, more preferably 150 to 800 Pa · s, and particularly preferably 250 to 500 Pa · s. . When the viscosity is less than 100 Pa · s, the molding material for obtaining the elastic anisotropic conductive film 20 described later tends to cause sedimentation of the conductive particles in the addition-type liquid silicone rubber, resulting in good storage stability. In addition, when a parallel magnetic field is applied to the molding material layer, the conductive particles are not oriented so as to be aligned in the thickness direction, and it is difficult to form a chain of conductive particles in a uniform state. May be. On the other hand, when this viscosity exceeds 1,250 Pa · s, the molding material obtained is high in viscosity, so that it may be difficult to form a molding material layer in the mold. Even when a parallel magnetic field is applied to the material layer, the conductive particles do not move sufficiently, and it may be difficult to orient the conductive particles so as to be aligned in the thickness direction.
The viscosity of such an addition type liquid silicone rubber can be measured by a B type viscometer.

When the elastic anisotropic conductive film 20 is formed of a cured liquid silicone rubber (hereinafter referred to as “silicone rubber cured product”), the cured silicone rubber has a compression set at 150 ° C. of 10% or less. Preferably, it is 8% or less, more preferably 6% or less. When this compression set exceeds 10%, when the anisotropically conductive connector obtained is repeatedly used many times or repeatedly in a high temperature environment, the connection conductive portion 21 is likely to be permanently set. As a result, the chain of conductive particles in the connection conductive portion 21 is disturbed, and it becomes difficult to maintain the required conductivity.
Here, the compression set of the cured silicone rubber can be measured by a method based on JIS K 6249.

Further, the cured silicone rubber forming the elastic anisotropic conductive film 20 preferably has a durometer A hardness of 10 to 60 at 23 ° C., more preferably 15 to 60, and particularly preferably 20 to 60. Is. When the durometer A hardness is less than 10, the insulating portions 22 that insulate the connecting conductive portions 21 from each other when pressed are excessively distorted, and required insulation between the connecting conductive portions 21 is obtained. May be difficult to maintain. On the other hand, when the durometer A hardness exceeds 60, a pressing force with a considerably large load is required to give an appropriate strain to the connecting conductive portion 21, and therefore, for example, a large deformation or Destruction is likely to occur.
Further, when a silicone rubber cured product having a durometer A hardness outside the above range is used, permanent deformation occurs in the connecting conductive portion 21 when the obtained anisotropic conductive connector is repeatedly used many times. As a result, the chain of conductive particles in the connecting conductive portion 21 is disturbed, so that it becomes difficult to maintain the required conductivity. Further, when the anisotropically conductive connector is used for a test in a high temperature environment, for example, a WLBI test, the cured silicone rubber forming the elastic anisotropically conductive film 20 has a durometer A hardness of 25 to 40 at 23 ° C. It is preferable that
When a cured silicone rubber having a durometer A hardness outside the above range is used, when the anisotropically conductive connector obtained is repeatedly used in a test under a high temperature environment, the connecting conductive portion 21 is permanently strained. As a result, disorder of the chain of conductive particles in the connecting conductive portion 21 occurs, and it becomes difficult to maintain the required conductivity.
Here, the durometer A hardness of the cured silicone rubber can be measured by a method based on JIS K 6249.

Further, the cured silicone rubber forming the elastic anisotropic conductive film 20 preferably has a tear strength at 23 ° C. of 8 kN / m or more, more preferably 10 kN / m or more, more preferably 15 kN / m. As described above, it is particularly preferably 20 kN / m or more. When the tear strength is less than 8 kN / m, when excessive strain is applied to the elastic anisotropic conductive film 20, the durability tends to decrease.
Here, the tear strength of the cured silicone rubber can be measured by a method based on JIS K 6249.

  As the addition-type liquid silicone rubber having such properties, those commercially available as liquid silicone rubbers “KE2000” series and “KE1950” series manufactured by Shin-Etsu Chemical Co., Ltd. can be used.

In the present invention, an appropriate curing catalyst can be used to cure the addition-type liquid silicone rubber. As such a curing catalyst, a platinum-based catalyst can be used. Specific examples thereof include chloroplatinic acid and salts thereof, platinum-unsaturated siloxane complex, vinylsiloxane-platinum complex, platinum and Examples include known complexes such as 1,3-divinyltetramethyldisiloxane complex, triorganophosphine or phosphite and platinum complex, acetyl acetate platinum chelate, and cyclic diene and platinum complex.
The amount of the curing catalyst used is appropriately selected in consideration of the type of the curing catalyst and other curing treatment conditions, and is usually 3 to 15 parts by weight with respect to 100 parts by weight of the addition type liquid silicone rubber.

Further, in the addition type liquid silicone rubber, for the purpose of improving the thixotropy of the addition type liquid silicone rubber, adjusting the viscosity, improving the dispersion stability of the conductive particles, or obtaining a substrate having high strength, etc. If necessary, an inorganic filler such as normal silica powder, colloidal silica, aerogel silica, and alumina can be contained.
The amount of such an inorganic filler used is not particularly limited, but if it is used in a large amount, it is not preferable because the orientation of the conductive particles by a magnetic field cannot be sufficiently achieved.

  As the conductive particles P contained in the connecting conductive portion 21 of the elastic anisotropic conductive film 20, the surface of core particles exhibiting magnetism (hereinafter also referred to as “magnetic core particles”) is coated with a highly conductive metal. Is preferably used.

The magnetic core particles for obtaining the conductive particles P preferably have a number average particle diameter of 3 to 40 μm.
Here, the number average particle diameter of the magnetic core particles refers to that measured by a laser diffraction scattering method.
When the number average particle diameter is 3 μm or more, it is easy to obtain a conductive portion 21 for connection that is easily deformed under pressure, has a low resistance value, and high connection reliability. On the other hand, when the number average particle diameter is 40 μm or less, the fine connecting conductive part 21 can be easily formed, and the obtained connecting conductive part 21 tends to have stable conductivity. .

The magnetic core particles preferably have a BET specific surface area of 10 to 500 m ² / kg, more preferably 20 to 500 m ² / kg, particularly preferably 50 to 400 m ² / kg.
If the BET specific surface area is 10 m ² / kg or more, the magnetic core particles have a sufficiently large area that can be plated, so that the magnetic core particles can be reliably plated with a required amount, Accordingly, the conductive particles P having high conductivity can be obtained, and the contact area between the conductive particles P is sufficiently large, so that stable and high conductivity can be obtained. On the other hand, if the BET specific surface area is 500 m ² / kg or less, the magnetic core particles will not be brittle, and will not break when subjected to physical stress, maintaining stable and high conductivity. Is done.

The magnetic core particles preferably have a particle diameter variation coefficient of 50% or less, more preferably 40% or less, still more preferably 30% or less, and particularly preferably 20% or less.
Here, the coefficient of variation of the particle diameter is obtained by the formula: (σ / Dn) × 100 (where σ represents the value of the standard deviation of the particle diameter, and Dn represents the number average particle diameter of the particles). It is what
If the variation coefficient of the particle diameter is 50% or less, the uniformity of the particle diameter is large, and therefore, the connection conductive portion 21 having a small variation in conductivity can be formed.

As the material constituting the magnetic core particles, iron, nickel, cobalt, those metals coated with copper or resin, and the like can be used, but those having a saturation magnetization of 0.1 Wb / m ² or more are preferable. More preferably, it is 0.3 Wb / m ² or more, particularly preferably 0.5 Wb / m ² or more, and specific examples include iron, nickel, cobalt, and alloys thereof.
If the saturation magnetization is 0.1 Wb / m ² or more, the conductive particles P can be easily moved in the molding material layer for forming the elastic anisotropic conductive film 20 by the method described later. Thereby, the electroconductive particle P can be reliably moved to the part used as the connection conductive part in the said molding material layer, and the chain | strand of the electroconductive particle P can be formed.

The conductive particles P used to obtain the connection conductive portion 21 are obtained by coating the surface of the magnetic core particles with a highly conductive metal.
Here, “highly conductive metal” refers to a metal having a conductivity of 5 × 10 ⁶ Ω ⁻¹ m ⁻¹ or more at 0 ° C.
As such a highly conductive metal, gold, silver, rhodium, platinum, chromium, or the like can be used. Among these, gold is preferably used because it is chemically stable and has high conductivity.

In the conductive particles P, the ratio of the highly conductive metal to the core particles [(mass of high conductive metal / mass of core particles) × 100] is 15% by mass or more, preferably 25 to 35% by mass. .
When the ratio of the highly conductive metal is less than 15% by mass, when the anisotropically conductive connector obtained is repeatedly used in a high temperature environment, the conductivity of the conductive particles P is significantly reduced. The conductivity cannot be maintained.

The conductive particles P have a coating layer thickness t of 50 nm or more, preferably 100 to 200 nm, calculated from the following formula (1).
Formula (1) t = [1 / (Sw · ρ)] × [N / (1-N)]
[Where t is the thickness (m) of the coating layer made of a highly conductive metal, Sw is the BET specific surface area (m ² / kg) of the core particle, ρ is the specific gravity (kg / m ³ ) of the highly conductive metal, and N is The value of (weight of highly conductive metal / weight of conductive particles as a whole) is shown. ]

The above mathematical formula is derived as follows.
(I) When the weight of the magnetic core particles is Mp (kg), the surface area S (m ² ) of the magnetic core particles is
S = Sw · Mp ......... Formula (2)
Sought by.
(Ii) When the weight of the coating layer made of a highly conductive metal is m (kg), the volume V (m ³ ) of the coating layer is
V = m / ρ ... Formula (3)
Sought by.
(Iii) Here, assuming that the thickness of the coating layer is uniform over the entire surface of the conductive particles, t = V / S, and substituting the above formulas (2) and (3) into this, The thickness t of the coating layer is
t = (m / ρ) / (Sw · Mp) = m / (Sw · ρ · Mp) Equation (4)
Sought by.
(Iv) Further, since N is the ratio of the mass of the coating layer to the mass of the entire conductive particles, the value of N is
N = m / (Mp + m) (5)
Sought by.
(V) Dividing the numerator and denominator on the right side of this equation (5) by Mp,
N = (m / Mp) / (1 + m / Mp), and when (1 + m / Mp) is applied to both sides,
N (1 + m / Mp) = m / Mp,
N + N (m / Mp) = m / Mp, and when N (m / Mp) is shifted to the right side,
N = m / Mp-N (m / Mp) = (m / Mp) (1-N), and dividing both sides by (1-N) yields N / (1-N) = m / Mp,
Therefore, the weight Mp of the magnetic core particle is
Mp = m / [N / (1-N)] = m (1-N) / N Expression (6)
Sought by.
(Vi) Then, when substituting equation (6) into equation (4),
t = 1 / [Sw · ρ · (1-N) / N]
= [1 / (Sw · ρ)] × [N / (1-N)]
Is guided.

  If the thickness t of the coating layer is 50 nm or more, when the anisotropic conductive connector is repeatedly used in a high-temperature environment, the ferromagnetic material constituting the magnetic core particles in the highly conductive metal constituting the coating layer Even if it shifts to, the surface of the conductive particles P has a high proportion of highly conductive metal, so that the conductivity of the conductive particles P does not decrease significantly, and the desired conductivity is maintained. Maintained.

Moreover, it is preferable that the number average particle diameter of the electroconductive particle P is 3-40 micrometers, More preferably, it is 6-25 micrometers.
By using such conductive particles P, the elastic anisotropic conductive film 20 obtained can be easily deformed under pressure, and the conductive particles in the connecting conductive portion 21 of the elastic anisotropic conductive film 20 can be obtained. Sufficient electrical contact between P is obtained.
Further, the shape of the conductive particles P is not particularly limited, but spherical particles, star-shaped particles, or agglomerated particles 2 can be easily dispersed in the polymer substance-forming material. It is preferable that it is a lump with secondary particles.

Such conductive particles P can be obtained by the following method, for example.
First, magnetic core particles having a required particle diameter are prepared by making a ferromagnetic material into particles by a conventional method or preparing commercially available ferromagnetic particles and classifying the particles.
Here, the particle classification process can be performed by a classification device such as an air classification device or a sonic sieving device.
Specific conditions for the classification treatment are appropriately set according to the number average particle diameter of the target magnetic core particles, the type of the classification device, and the like.
Next, the surface of the magnetic core particle is treated with an acid, and further, for example, washed with pure water to remove impurities such as dirt, foreign matter, and oxide film present on the surface of the magnetic core particle. Conductive particles are obtained by coating the surface of the particles with a highly conductive metal.
Here, hydrochloric acid etc. can be mentioned as an acid used in order to process the surface of a magnetic core particle.
As a method for coating the surface of the magnetic core particles with the highly conductive metal, an electroless plating method, a displacement plating method, or the like can be used, but the method is not limited to these methods.

The method of producing conductive particles by the electroless plating method or the displacement plating method will be described. First, a slurry is prepared by adding acid-treated and washed magnetic core particles to the plating solution, and the slurry is stirred. Then, electroless plating or displacement plating of the magnetic core particles is performed. Next, the particles in the slurry are separated from the plating solution, and then the particles are washed with pure water, for example, to obtain conductive particles in which the surface of the magnetic core particles is coated with a highly conductive metal.
In addition, after a base plating layer is formed on the surface of the magnetic core particles to form a base plating layer, a plating layer made of a highly conductive metal may be formed on the surface of the base plating layer. The method of forming the base plating layer and the plating layer formed on the surface thereof is not particularly limited, but the base plating layer is formed on the surface of the magnetic core particles by the electroless plating method, and then the base plating layer is formed by the displacement plating method. It is preferable to form a plating layer made of a highly conductive metal on the surface of the plating layer.
The plating solution used for electroless plating or displacement plating is not particularly limited, and various commercially available products can be used.

Also, when the surface of the magnetic core particles is coated with a highly conductive metal, the particles may agglomerate to generate conductive particles having a large particle diameter. It is preferable to carry out the treatment, and as a result, conductive particles having an intended particle size can be obtained with certainty.
Examples of the classification device for performing the classification treatment of the conductive particles include those exemplified as the classification device used in the classification treatment for preparing the above-described magnetic core particles.

  It is preferable that the content ratio of the conductive particles P in the connecting conductive portion 21 is 10 to 60%, preferably 15 to 50% in terms of volume fraction. When this ratio is less than 10%, the connection conductive portion 21 having a sufficiently small electric resistance value may not be obtained. On the other hand, when this ratio exceeds 60%, the obtained connecting conductive portion 21 is likely to be fragile, and the elasticity necessary for the connecting conductive portion 21 may not be obtained.

The anisotropic conductive connector described above can be manufactured as follows.
<Production of frame plate>
A frame plate 10 in which an opening 11 is formed corresponding to an electrode region in which electrodes to be inspected in all integrated circuits formed on a wafer to be inspected is manufactured. Here, the method of forming the opening 11 of the frame plate 10 is appropriately selected according to the material constituting the frame plate 10, and for example, an etching method or the like can be used.

<Formation of conductive elastomer layer>
A liquid elastomer material which is cured to become an elastic polymer substance, preferably a conductive elastomer material in which conductive particles exhibiting magnetism are dispersed in an addition type liquid silicone rubber is prepared. Next, as shown in FIG. 5, the conductive elastomer material layer 21 </ b> A is formed on the releasable support plate 16 for forming the conductive portion by applying a conductive elastomer material. Here, in the conductive elastomer material layer 21A, as shown in FIG. 6, the conductive particles P exhibiting magnetism are contained in a dispersed state.
Next, by applying a magnetic field to the conductive elastomer material layer 21A in the thickness direction, the conductive particles P dispersed in the conductive elastomer material layer 21A are made conductive as shown in FIG. The material layer 21A is oriented so as to be aligned in the thickness direction. Then, while continuing the action of the magnetic field on the conductive elastomer material layer 21A or after the action of the magnetic field is stopped, the conductive elastomer material layer 21A is cured to perform elasticity as shown in FIG. A conductive elastomer layer 21 </ b> B is formed in a state where the conductive particles P are contained in the polymer substance so that the conductive particles P are aligned in the thickness direction and supported on the releasable support plate 16.

In the above, as a material constituting the releasable support plate 16, metals, ceramics, resins, composite materials thereof, and the like can be used.
As a method of applying the conductive elastomer material, a printing method such as screen printing, a roll coating method, a blade coating method, or the like can be used.
The thickness of the conductive elastomer material layer 21A is set according to the thickness of the connecting conductive portion to be formed.
As a means for applying a magnetic field to the conductive elastomer material layer 21A, an electromagnet, a permanent magnet, or the like can be used.
The strength of the magnetic field applied to the conductive elastomer material layer 21A is preferably 0.2 to 2.5 Tesla.
The curing process of the conductive elastomer material layer 21A is usually performed by a heating process. The specific heating temperature and heating time are appropriately set in consideration of the type of elastomer material constituting the conductive elastomer material layer 21A, the time required to move the conductive particles, and the like.

<Formation of conductive part for connection>
As shown in FIG. 9, a thin metal layer 17 for a plating electrode is formed on the surface of the conductive elastomer layer 21B supported on the releasable support plate 16. Next, as shown in FIG. 10, a specific pattern corresponding to the pattern of the conductive part for connection to be formed on the thin metal layer 17 by photolithography, that is, the pattern of the electrode to be inspected in the wafer to be inspected. Thus, a resist layer 18 having a plurality of openings 18a is formed. Thereafter, as shown in FIG. 11, the resist layer 18 is subjected to electrolytic plating treatment on the exposed portion of the metal thin layer 17 through the opening 18a of the resist layer 18 using the metal thin layer 17 as a plating electrode. A metal mask 19 is formed in the opening 18a. In this state, the conductive elastomer layer 21B, the metal thin layer 17 and the resist layer 18 are subjected to laser processing to remove a part of the resist layer 18, the metal thin layer 17 and the conductive elastomer layer 21B. As a result, as shown in FIG. 12, a plurality of connection conductive portions 21 arranged according to a specific pattern are formed on the releasable support plate 16. Thereafter, the remaining thin metal layer 17 and metal mask 19 are peeled off from the surface of the connecting conductive portion 21.

In the above, as a method of forming the metal thin layer 17 on the surface of the conductive elastomer layer 21B, an electroless plating method, a sputtering method, or the like can be used.
As a material constituting the metal thin layer 17, copper, gold, aluminum, rhodium, or the like can be used.
The thickness of the metal thin layer 17 is preferably 0.05 to 2 μm, more preferably 0.1 to 1 μm. When this thickness is too small, a uniform thin layer is not formed, which may be inappropriate as a plating electrode. On the other hand, if this thickness is excessive, it may be difficult to remove by laser processing.
The thickness of the resist layer 18 is set according to the thickness of the metal mask 19 to be formed.
As a material constituting the metal mask 19, copper, iron, aluminum uni, gold, rhodium, or the like can be used.
The thickness of the metal mask 19 is preferably 2 μm or more, more preferably 5 to 20 μm. If this thickness is too small, it may be unsuitable as a mask for the laser.
The laser processing is preferably performed using a carbon dioxide laser or an ultraviolet laser, whereby the connection conductive portion 21 having a desired form can be reliably formed.

<Formation of insulation>
As shown in FIG. 13, a releasable support plate 16A for forming an insulating portion is prepared, and a frame plate 10 is disposed on the surface of the releasable support plate 16A and cured to be an insulating elastic polymer. The insulating material layer 22A is formed by applying a liquid elastomer material that is a substance. Here, in the formation of the insulating portion material layer 22A, two plate-like spacers having openings having shapes that match the contour shape of the surface of the insulating portion to be formed are prepared, and the releasable support plate 16A. On top of this, one spacer, the frame plate 10 and the other spacer are overlapped in this order, and an elastomer material is filled in the opening of each spacer and the opening of the frame plate 10 to thereby form the insulating material layer 22A. Can be formed. According to such a method, it is possible to reliably form the insulating portion 22 having a desired shape.
Next, as shown in FIG. 14, the releasable support plate 16 in which the plurality of conductive portions 21 for connection are formed is overlaid on the releasable support plate 16A in which the insulating layer material layer 22A is formed. Each of the connecting conductive portions 21 is infiltrated into the insulating portion material layer 22A and brought into contact with the releasable support plate 16A. Thereby, it will be in the state by which 22 A of insulating part material layers were formed between the adjacent conductive parts 21 for a connection. Thereafter, in this state, the insulating portion material layer 22A is subjected to curing treatment, so that the insulating portions 22 that insulate them from each other are connected to the periphery of each of the connecting conductive portions 21, as shown in FIG. The elastic anisotropic conductive film 20 is formed integrally with the conductive portion 21 for use.
And the anisotropically conductive connector of the structure shown in FIG. 1 is obtained by releasing the elastic anisotropically conductive film 20 from the releasable support plates 16 and 16A.

In the above, as the material constituting the releasable support plate 16A, the same material as the releasable support plate 16 for forming the conductive portion can be used.
As a method of applying the elastomer material, a printing method such as screen printing, a roll coating method, a blade coating method, or the like can be used.
The thickness of the insulating part material layer 22A is set according to the thickness of the insulating part to be formed.
The curing process of the insulating part material layer 22A is usually performed by heat treatment. The specific heating temperature and heating time are appropriately set in consideration of the type of elastomer material constituting the insulating part material layer 22A.

According to the above manufacturing method, the conductive elastomer layer 21B, which is dispersed in a state in which the conductive particles P are aligned so as to be aligned in the thickness direction, is laser-processed to remove a part of the conductive elastomer layer 21B. Since the connection conductive portion 21 is formed, the connection conductive portion 21 having the desired conductivity filled with a required amount of the conductive particles P can be reliably obtained.
In addition, after forming a plurality of connection conductive portions 21 arranged according to a specific pattern on the releasable support plate 16, an insulating material layer 22A is formed between the connection conductive portions 21. Since the insulating part 22 is formed by performing the curing process, it is possible to reliably obtain the insulating part 22 in which the conductive particles P are not present at all.
In addition, it is not necessary to use an expensive mold in which a large number of ferromagnetic layers used to manufacture a conventional anisotropically conductive connector are arranged.
Therefore, according to the anisotropic conductive connector obtained by such a method, even if the electrodes to be inspected on the wafer to be inspected are arranged at a high density with a small pitch, The required electrical connection can be reliably achieved for each of them, and the manufacturing cost can be reduced.

Further, since each of the elastic anisotropic conductive films 20 is supported by the opening edge of the frame plate 10, it is difficult to be deformed and is easy to handle, and in the electrical connection work with the wafer to be inspected, alignment with the wafer is performed. In addition, the holding and fixing can be easily performed.
Each of the openings 11 of the frame plate 10 is formed corresponding to an electrode region in which the electrodes to be inspected of all the integrated circuits formed on the wafer to be inspected are arranged. Since the elastic anisotropic conductive film 20 to be disposed may have a small area, it is easy to form the individual elastic anisotropic conductive films 20.
In addition, the elastic anisotropic conductive film 20 having a small area has a small absolute amount of thermal expansion in the surface direction of the elastic anisotropic conductive film 20 even when it receives a thermal history. The thermal expansion in is reliably regulated by the frame plate. Moreover, since the thermal expansion of the entire anisotropically conductive connector depends on the thermal expansion of the material constituting the frame plate 10, the use of a material having a low thermal expansion coefficient as the material constituting the frame plate 10 causes a change in temperature. Even when the thermal history is received, the position of the conductive portion for connection in the anisotropic conductive connector and the electrode to be inspected on the wafer is prevented, so that a good electrical connection state is stably maintained.
Further, since the positioning hole 13 is formed in the frame plate 10, it is possible to easily perform alignment with the wafer to be inspected or the circuit board for inspection.
In addition, since the air circulation hole 12 is formed in the frame plate 10, in the wafer inspection apparatus described later, when using a decompression method as a means for pressing the probe member, when the inside of the chamber is decompressed, Air existing between the anisotropic conductive connector and the inspection circuit board is exhausted through the air flow hole 12 of the frame plate 10, thereby ensuring the close contact between the anisotropic conductive connector and the inspection circuit board. Therefore, the required electrical connection can be reliably achieved.

[Wafer inspection equipment]
FIG. 16 is an explanatory cross-sectional view showing an outline of a configuration of an example of a wafer inspection apparatus using the anisotropic conductive connector according to the present invention. This wafer inspection apparatus is for performing an electrical inspection of each of the plurality of integrated circuits formed on the wafer in the state of the wafer.

The wafer inspection apparatus shown in FIG. 16 has a probe member 1 that electrically connects each of the electrodes to be inspected 7 of the wafer 6 to be inspected and a tester. In the probe member 1, as shown in an enlarged view in FIG. 17, a plurality of inspection electrodes 31 are formed on the surface (lower surface in the drawing) according to a pattern corresponding to the pattern of the electrode 7 to be inspected on the wafer 6 to be inspected. The anisotropic conductive connector 2 having the structure shown in FIGS. 1 to 4 is connected to the conductive circuit for connection in the elastic anisotropic conductive film 20 on the surface of the inspection circuit board 30. Each of the portions 21 is provided so as to be in contact with each of the inspection electrodes 31 of the inspection circuit board 30, and the insulating sheet 41 is inspected on the surface (the lower surface in FIGS. 16 and 17) of the anisotropic conductive connector 2. A sheet-like probe 40 in which a plurality of electrode structures 42 are arranged in accordance with a pattern corresponding to the pattern of the electrode 7 to be inspected on the target wafer 6 is such that each of the electrode structures 42 is anisotropically conductive. It is provided so as to be in contact against the respective conductive parts for connection 21 in the connector 2 of the elastic anisotropically conductive films 20.
Further, a pressure plate 3 that pressurizes the probe member 1 downward is provided on the back surface (upper surface in FIG. 16) of the circuit board 30 for inspection in the probe member 1. A wafer mounting table 4 on which a wafer 6 is mounted is provided, and a heater 5 is connected to each of the pressure plate 3 and the wafer mounting table 4.

As a substrate material constituting the inspection circuit board 30, various conventionally known substrate materials can be used. Specific examples thereof include a glass fiber reinforced epoxy resin, a glass fiber reinforced phenol resin, and a glass fiber reinforced type. Examples thereof include composite resin materials such as polyimide resin and glass fiber reinforced bismaleimide triazine resin, and ceramic materials such as glass, silicon dioxide, and alumina.
Further, when configuring a wafer inspection apparatus for performing a WLBI test, it is preferable to use one having a linear thermal expansion coefficient of 3 × 10 ⁻⁵ / K or less, more preferably 1 × 10 ⁻⁷ to 1 ×. 10 ⁻⁵ / K, particularly preferably 1 × 10 ^{−6 to} 6 × 10 ⁻⁶ / K.
Specific examples of such a substrate material include Pyrex (registered trademark) glass, quartz glass, alumina, beryllia, silicon carbide, aluminum nitride, and boron nitride.

The sheet-like probe 40 in the probe member 1 will be described in detail. The sheet-like probe 40 has a flexible insulating sheet 41, and the insulating sheet 41 extends in the thickness direction of the insulating sheet 41. Electrode structures 42 made of a plurality of metals are arranged apart from each other in the surface direction of the insulating sheet 41 according to a pattern corresponding to the pattern of the electrode 7 to be inspected on the wafer 6 to be inspected.
Each of the electrode structures 42 includes a protruding surface electrode portion 43 exposed on the surface (lower surface in the drawing) of the insulating sheet 41 and a plate-like back electrode portion 44 exposed on the back surface of the insulating sheet 41. The insulating sheet 41 is integrally connected to each other by a short-circuit portion 45 that extends through the thickness direction of the insulating sheet 41.

The insulating sheet 41 is not particularly limited as long as it is flexible and has an insulating property. A sheet impregnated with the above resin can be used.
In addition, the thickness of the insulating sheet 41 is not particularly limited as long as the insulating sheet 41 is flexible, but is preferably 10 to 50 μm, and more preferably 10 to 25 μm.

As the metal constituting the electrode structure 42, nickel, copper, gold, silver, palladium, iron or the like can be used. As the electrode structure 42, the whole is made of a single metal, It may be made of an alloy of two or more metals or a laminate of two or more metals.
Further, gold, silver, palladium, etc. are provided on the surface of the front electrode portion 43 and the back electrode portion 44 in the electrode structure 42 in that the electrode portion is prevented from being oxidized and an electrode portion having a low contact resistance is obtained. It is preferable that a chemically stable and highly conductive metal film is formed.

The protruding height of the surface electrode portion 43 in the electrode structure 42 is preferably 15 to 50 μm, more preferably in that stable electrical connection can be achieved with respect to the electrode 7 to be inspected on the wafer 6. Is 15-30 μm. Moreover, although the diameter of the surface electrode part 43 is set according to the dimension and pitch of the to-be-inspected electrode of the wafer 6, it is 30-80 micrometers, for example, Preferably it is 30-50 micrometers.
The diameter of the back electrode portion 44 in the electrode structure 42 may be larger than the diameter of the short-circuit portion 45 and smaller than the arrangement pitch of the electrode structures 42, but is preferably as large as possible. Thereby, it is possible to reliably achieve stable electrical connection to the connection conductive portion 21 in the elastic anisotropic conductive film 20 of the anisotropic conductive connector 2. In addition, the thickness of the back electrode portion 44 is preferably 20 to 50 μm, more preferably 35 to 50 μm in that the strength is sufficiently high and excellent repeated durability can be obtained.
The diameter of the short-circuit portion 45 in the electrode structure 42 is preferably 30 to 80 μm, more preferably 30 to 50 μm, from the viewpoint that sufficiently high strength can be obtained.

The sheet-like probe 40 can be manufactured as follows, for example.
That is, a laminated material in which a metal layer is laminated on an insulating sheet 41 is prepared, and the insulating sheet 41 in the laminated material is subjected to laser processing, dry etching processing, or the like in the thickness direction of the insulating sheet 41. A plurality of through-holes penetrating through are formed according to a pattern corresponding to the pattern of the electrode structure 42 to be formed. Next, the laminated material is subjected to photolithography and plating to form a short-circuit portion 45 integrally connected to the metal layer in the through hole of the insulating sheet 41, and the surface of the insulating sheet 41 In addition, a protruding surface electrode portion 43 integrally connected to the short-circuit portion 45 is formed. Thereafter, the metal layer in the laminated material is subjected to a photo-etching process and a part thereof is removed, thereby forming the back electrode portion 44 and the electrode structure 42, thereby obtaining the sheet-like probe 40. .

  In such an electrical inspection apparatus, the wafer 6 to be inspected is placed on the wafer mounting table 4, and then the probe member 1 is pressed downward by the pressure plate 3, thereby the sheet-like probe. Each of the surface electrode portions 43 in the 40 electrode structures 42 is in contact with each of the electrodes 7 to be inspected on the wafer 6, and each of the surface electrodes 43 of the wafer 6 is added by each of the surface electrode portions 43. Pressed. In this state, each of the connection conductive portions 21 in the elastic anisotropic conductive film 20 of the anisotropic conductive connector 2 is the surface electrode of the test electrode 31 of the test circuit board 30 and the electrode structure 42 of the sheet-like probe 40. The conductive portion 21 is compressed in the thickness direction by being sandwiched by the portion 43, whereby a conductive path is formed in the connecting conductive portion 21 in the thickness direction. As a result, the inspection target electrode 7 of the wafer 6 and the inspection electrode 7 are inspected. Electrical connection with the inspection electrode 31 of the circuit board 30 is achieved. Thereafter, the wafer 6 is heated to a predetermined temperature by the heater 5 via the wafer mounting table 4 and the pressure plate 3, and in this state, a required electrical inspection is performed on each of the plurality of integrated circuits on the wafer 6. Is done.

According to such a wafer inspection apparatus, the electrical connection of the wafer 6 to be inspected to the inspection electrode 7 is achieved via the probe member 1 having the anisotropic conductive connector 2 described above. Even if the pitch of the electrodes 7 is small, the wafer can be easily aligned and held and fixed. Further, when the electrode 7 is used repeatedly many times or in a test in a high temperature environment such as a WLBI test. Even in this case, the required electrical inspection can be performed stably over a long period of time.
Further, the elastic anisotropic conductive film 20 in the anisotropic conductive connector 2 has a small area, and even when subjected to a thermal history, the absolute thermal expansion in the surface direction of the elastic anisotropic conductive film 20 is not possible. Since the amount is small, thermal expansion in the surface direction of the elastic anisotropic conductive film 20 is reliably regulated by the frame plate by using a material having a small linear thermal expansion coefficient as a material constituting the frame plate 10. Therefore, even when the WLBI test is performed on a large-area wafer, a good electrical connection state can be stably maintained.

FIG. 18 is a cross-sectional view for explaining the outline of the configuration of another example of the wafer inspection apparatus using the anisotropic conductive connector according to the present invention.
This wafer inspection apparatus has a box-shaped chamber 50 having an upper surface opened in which a wafer 6 to be inspected is stored. An exhaust pipe 51 for exhausting air inside the chamber 50 is provided on the side wall of the chamber 50, and an exhaust device (not shown) such as a vacuum pump is connected to the exhaust pipe 51. ing.
A probe member 1 having the same configuration as the probe member 1 in the wafer inspection apparatus shown in FIG. 16 is disposed on the chamber 50 so as to airtightly close the opening of the chamber 50. Specifically, an elastic O-ring 55 is disposed in close contact with the upper end surface of the side wall of the chamber 50, and the probe member 1 includes the anisotropic conductive connector 2 and the sheet-like probe 40. And the peripheral portion of the inspection circuit board 30 is disposed in close contact with the O-ring 55, and the inspection circuit board 30 is provided on the back surface (upper surface in the drawing). The pressed plate 3 is pressed downward.
A heater 5 is connected to the chamber 50 and the pressure plate 3.

  In such a wafer inspection apparatus, by driving the exhaust device connected to the exhaust pipe 51 of the chamber 50, the inside of the chamber 50 is depressurized to, for example, 1000 Pa or less. As a result, the probe member 1 is moved downward by atmospheric pressure. Pressurized. Thereby, since the O-ring 55 is elastically deformed, the probe member 1 moves downward. As a result, each of the surface electrodes 43 in the electrode structure 42 of the sheet-like probe 40 causes each of the electrodes 7 to be inspected on the wafer 6. Is pressurized. In this state, each of the connection conductive portions 21 in the elastic anisotropic conductive film 20 of the anisotropic conductive connector 2 is the surface electrode of the test electrode 31 of the test circuit board 30 and the electrode structure 42 of the sheet-like probe 40. The conductive portion 21 is compressed in the thickness direction by being sandwiched by the portion 43, whereby a conductive path is formed in the connecting conductive portion 21 in the thickness direction. As a result, the inspection target electrode 7 of the wafer 6 and the inspection electrode 7 are inspected. Electrical connection with the inspection electrode 31 of the circuit board 30 is achieved. Thereafter, the wafer 6 is heated to a predetermined temperature by the heater 5 through the chamber 50 and the pressure plate 3, and in this state, a required electrical inspection is performed on each of the plurality of integrated circuits on the wafer 6. .

  According to such a wafer inspection apparatus, the same effect as that of the wafer inspection apparatus shown in FIG. 16 can be obtained. Further, since a large pressurizing mechanism is unnecessary, the entire inspection apparatus can be downsized. Even if the wafer 6 to be inspected has a large area of, for example, a diameter of 8 inches or more, the entire wafer 6 can be pressed with a uniform force. In addition, since the air flow hole 12 is formed in the frame plate 10 of the anisotropic conductive connector 2, the space between the anisotropic conductive connector 2 and the inspection circuit board 30 is reduced when the pressure in the chamber 50 is reduced. Is exhausted through the air flow holes 12 of the frame plate 10 in the anisotropic conductive connector 2, thereby ensuring that the anisotropic conductive connector 2 and the inspection circuit board 30 are in close contact with each other. As a result, the required electrical connection can be reliably achieved.

[Other Embodiments]
The present invention is not limited to the above-described embodiment, and the following various modifications can be added.
(1) In the anisotropic conductive connector, the elastic anisotropic conductive film 20 may be provided with a non-connection conductive portion that is not electrically connected to the electrode to be inspected on the wafer, in addition to the connection conductive portion 21. Good. Hereinafter, an anisotropic conductive connector having an elastic anisotropic conductive film in which a non-connection conductive portion is formed will be described.

FIG. 19 is an enlarged plan view showing an elastic anisotropic conductive film in another example of the anisotropic conductive connector according to the present invention. In the anisotropic anisotropic conductive film 20 of this anisotropically conductive connector, a plurality of connections for extending in the thickness direction (direction perpendicular to the paper surface in FIG. 19) electrically connected to the inspection target electrode of the wafer to be inspected. The conductive portions 21 are arranged in two rows according to a pattern corresponding to the pattern of the electrode to be inspected, and each of the conductive portions 21 for connection is in a state where the conductive particles exhibiting magnetism are aligned in the thickness direction. They are densely contained and are insulated from each other by insulating parts 22 that do not contain any conductive particles.
Then, in the direction in which the connecting conductive portions 21 are arranged, between the connecting conductive portion 21 located on the outermost side and the frame plate 10 in the thickness direction that is not electrically connected to the inspection target electrode of the wafer to be inspected. An extending non-connection conductive portion 26 is formed. The non-connection conductive portion 26 is densely contained in a state where the conductive particles exhibiting magnetism are aligned in the thickness direction, and the connection conductive portion is formed by the insulating portion 22 containing no conductive particles. 21 is insulated from each other.
Further, in the illustrated example, each of the non-connection conductive portions 26 is formed so as to protrude from one surface of the insulating portion 22, whereby the one surface of the elastic anisotropic conductive film 20 is related to the non-connection conductive portion 26. A protruding portion 27 is formed.
Other configurations are basically the same as those of the anisotropic conductive connector shown in FIGS.

FIG. 20 is an enlarged plan view showing an elastic anisotropic conductive film in still another example of the anisotropic conductive connector according to the present invention. In the anisotropic anisotropic conductive film 20 of this anisotropically conductive connector, a plurality of connections for extending in the thickness direction (direction perpendicular to the paper surface in FIG. 20) electrically connected to the inspection target electrode of the wafer to be inspected. The conductive portions 21 are arranged so as to be arranged in accordance with a pattern corresponding to the pattern of the electrode to be inspected, and each of the conductive portions 21 for connection is densely contained in a state where the conductive particles exhibiting magnetism are aligned in the thickness direction. Thus, they are insulated from each other by an insulating part 22 containing no conductive particles.
Two adjacent connection conductive parts 21 located in the center among these connection conductive parts 21 are arranged with a separation distance larger than the separation distance between the other connection conductive parts 21 adjacent to each other. A non-connection conductive portion 26 extending in the thickness direction that is not electrically connected to the inspection target electrode of the wafer to be inspected is formed between the two adjacent connection conductive portions 21 located in the center. Yes. The non-connection conductive portion 26 is densely contained in a state where the conductive particles exhibiting magnetism are aligned in the thickness direction, and the connection conductive portion is formed by the insulating portion 22 containing no conductive particles. 21 is insulated from each other.
Further, in the illustrated example, each of the non-connection conductive portions 26 is formed so as to protrude from one surface of the insulating portion 22, so that both surfaces of the elastic anisotropic conductive film 20 are related to the non-connection conductive portions 26. A protruding portion 27 is formed.
Other specific configurations are basically the same as those of the anisotropic conductive connector shown in FIGS.

(2) In the anisotropically conductive connector, each of the connecting conductive portions 21 is formed so as to protrude from each of both surfaces of the insulating portion 22, whereby the connecting conductive portions are formed on both surfaces of the elastic anisotropic conductive film 20. The structure in which the protrusion part which concerns on 21 was formed may be sufficient. Such an elastic anisotropic conductive film 21 can be obtained as follows. That is, in forming the insulating portion 22, the connecting conductive portion 21 is pressed and compressed in the thickness direction by the releasable support plates 16 and 16A, and the insulating portion material layer 22A is cured in this state, thereby insulating the insulating portion 22. Part 22 is formed. Thereafter, by releasing the pressure applied to the connecting conductive portion 21 by the releasable support plates 16, 16 </ b> A, the compressed connecting conductive portion 21 is restored to its original form. A connecting conductive portion 21 having a protruding portion protruding is obtained.
(3) The protrusion 23 in the elastic anisotropic conductive film 20 is not essential, and both surfaces of the elastic anisotropic conductive film 20 may be flat or may be formed with a recess.

(4) As a method of forming the conductive elastomer layer 21B supported on the releasable support plate 16, conductive particles that show magnetism in the insulating elastic polymer material manufactured in advance are arranged in the thickness direction. A method is used in which a conductive elastomer sheet dispersed in an aligned state is adhered and supported on the releasable support plate 16 by the adhesive property of the conductive elastomer sheet or by an appropriate adhesive. You can also. Here, the conductive elastomer sheet is formed, for example, by forming a conductive elastomer material layer between two resin sheets and applying a magnetic field in the thickness direction to the conductive elastomer layer. It is manufactured by orienting the conductive particles in the material layer to be aligned in the thickness direction and curing the material layer for the conductive elastomer while continuing the action of the magnetic field or after stopping the action of the magnetic field. be able to.
(5) In the formation of the conductive portion 21 for connection, the conductive portion for connection may be formed by removing all of the conductive elastomer layer 21B other than the portion to be the conductive portion for connection by laser processing. However, as shown in FIG. 21 and FIG. 22, the connecting conductive portion 21 can be formed by removing only the peripheral portion of the conductive elastomer layer 21 </ b> B that becomes the connecting conductive portion. In this case, the remaining part of the conductive elastomer layer 21 </ b> B can be removed by mechanically peeling from the releasable support plate 16.

(6) In the probe member, the sheet-like probe 40 is not indispensable, and the elastic anisotropic conductive film 20 in the anisotropic conductive connector 2 contacts the wafer to be inspected to achieve electrical connection. It may be.

(7) In the anisotropic conductive connector of the present invention, the opening of the frame plate is formed corresponding to the electrode region in which the electrode to be inspected is arranged in a part of the integrated circuit formed on the wafer to be inspected. The elastic anisotropic conductive film may be disposed in each of these openings.
According to such an anisotropic conductive connector, a wafer can be divided into two or more areas, and a probe test can be collectively performed on the integrated circuits formed in the divided areas.
In other words, in the wafer inspection method using the anisotropic conductive connector of the present invention or the probe member of the present invention, it is not essential to perform all the integrated circuits formed on the wafer in a lump.
In the burn-in test, since the inspection time required for each integrated circuit is as long as several hours, a high time efficiency can be obtained if all the integrated circuits formed on the wafer are inspected collectively. Because the inspection time required for each of the integrated circuits is as short as several minutes, the wafer is divided into two or more areas, and a probe test is performed on the integrated circuits formed in the areas for each divided area. Even if it is done, a sufficiently high time efficiency can be obtained.
As described above, according to the method of performing the electrical inspection for each divided area on the integrated circuit formed on the wafer, the integrated circuit formed on the wafer having a diameter of 8 inches or 12 inches with a high degree of integration is electrically connected. When performing a physical inspection, it is possible to reduce the number of inspection electrodes and the number of wirings of the inspection circuit board to be used, compared with a method of performing inspection on all integrated circuits at once. The manufacturing cost can be reduced.

(8) The anisotropic conductive connector of the present invention or the probe member of the present invention is a protruding electrode made of gold or solder in addition to the inspection of a wafer on which an integrated circuit having a planar electrode made of aluminum is formed. It can also be used for inspection of a wafer on which an integrated circuit having (bumps) is formed.
Since an electrode made of gold, solder, or the like is harder to form an oxide film on the surface than an electrode made of aluminum, in the inspection of a wafer on which an integrated circuit having such protruding electrodes is formed. This eliminates the need to pressurize with a large load necessary to break through the oxide film, and without inspecting the sheet-like probe, inspecting with the conductive part for connecting the anisotropic conductive connector in direct contact with the electrode to be inspected Can be executed.

  Specific examples of the present invention will be described below, but the present invention is not limited to these examples.

[Production of test wafer]
As shown in FIG. 23, square integrated circuits L each having a size of 9 mm × 9 mm are totaled on a wafer 6 made of silicon (linear thermal expansion coefficient 3.3 × 10 ⁻⁶ / K) having a diameter of 8 inches. 393 were formed. Each of the integrated circuits L formed on the wafer 6 has an inspected electrode region A in the center thereof as shown in FIG. 24, and each of the inspected electrode regions A is vertically arranged as shown in FIG. 40 rectangular test electrodes 7 having a dimension in the direction (vertical direction in FIG. 25) of 200 μm and a dimension in the horizontal direction (horizontal direction in FIG. 25) of 60 μm are arranged in a row in the horizontal direction at a pitch of 120 μm. . The total number of electrodes 7 to be inspected on the entire wafer 6 is 15720, and all the electrodes 7 to be inspected are electrically insulated from each other. Hereinafter, this wafer is referred to as “test wafer W1”.
Further, instead of electrically insulating all the electrodes to be inspected (7) from each other, one of the 40 electrodes to be inspected in the integrated circuit (L) counted from the outermost electrode to be inspected (7). 393 integrated circuits (L) having the same configuration as that of the test wafer W1 were formed on the wafer (6) except that every other two pieces were electrically connected to each other. Hereinafter, this wafer is referred to as “test wafer W2”.

<Example 1>
[Production of frame plate]
In accordance with the configuration shown in FIGS. 26 and 27, under the following conditions, a frame plate (diameter 8 inches) having 393 openings (11) formed corresponding to each electrode area to be inspected in the test wafer W1 described above. 10) was produced.
The material of the frame plate (10) is Kovar (coefficient of linear thermal expansion 5 × 10 ⁻⁶ / K), and its thickness is 60 μm. Each of the openings (11) of the frame plate (10) has a horizontal dimension (horizontal direction in FIGS. 26 and 27) of 5.5 mm and a vertical dimension (vertical direction in FIGS. 26 and 27) of 0. 4 mm.
A circular air inflow hole (12) is formed at a central position between the openings (11) adjacent in the vertical direction, and the diameter thereof is 1 mm.

[Production of molding spacer]
Two spacers for forming an elastic anisotropic conductive film having a plurality of openings formed corresponding to the electrode region to be inspected in the test wafer W1 were produced under the following conditions.
These spacers are made of stainless steel (SUS304) and have a thickness of 20 μm. Each of the spacer openings has a lateral dimension of 7 mm and a longitudinal dimension of 4 mm.

[Preparation of magnetic core particle [A]]
Magnetic core particles [A] were prepared as follows using commercially available nickel particles (manufactured by Westim, “FC1000”).
Nissin Engineering Co., Ltd. air classifier "Turbo Classifier TC-15N" uses 2kg of nickel particles, specific gravity is 8.9, air volume is 2.5m ³ / min, rotor speed is 1,600rpm, classification point is Classification is performed under the conditions of 25 μm and the supply speed of nickel particles is 16 g / min, and 1.8 kg of nickel particles are collected. Further, 1.8 kg of the nickel particles are collected with a specific gravity of 8.9 and an air volume of 2.5 m ^3. / Min, rotor rotation speed was 3,000 rpm, classification point was 10 μm, nickel particle supply rate was 14 g / min, and 1.5 kg of nickel particles were collected.
Subsequently, 120 g of nickel particles classified by an air classifier were further classified by a sonic sieve “SW-20AT type” manufactured by Tsutsui Rikagaku Co., Ltd. Specifically, four sieves each having a diameter of 200 mm and opening diameters of 25 μm, 20 μm, 16 μm, and 8 μm are stacked in this order from the top in this order, and 10 g of ceramic balls having a diameter of 2 mm are introduced into each sieve. Then, 20 g of nickel particles are put into the uppermost screen (opening diameter: 25 μm) and classified under conditions of 12 minutes at 55 Hz and 15 minutes at 125 Hz, and collected on the lowermost screen (opening diameter: 8 μm). Nickel particles were recovered. By performing this operation 25 times in total, 110 g of magnetic core particles [A] were prepared.
The obtained magnetic core particle [A] has a number average particle diameter of 10 μm, a particle diameter variation coefficient of 10%, a BET specific surface area of 0.2 × 10 ³ m ² / kg, and a saturation magnetization of 0.6 Wb / m. ² .

[Preparation of conductive particles [a]]
100 g of magnetic core particles [A] were put into a treatment tank of a powder plating apparatus, and further 2 L of 0.32N hydrochloric acid aqueous solution was added and stirred to obtain a slurry containing magnetic core particles [A]. The slurry was stirred at room temperature for 30 minutes to perform acid treatment of the magnetic core particles [A], and then allowed to stand for 1 minute to precipitate the magnetic core particles [A], and the supernatant was removed.
Next, 2 L of pure water is added to the acid-treated magnetic core particles [A], stirred at room temperature for 2 minutes, and then allowed to stand for 1 minute to precipitate the magnetic core particles [A] and remove the supernatant. did. By repeating this operation two more times, the magnetic core particles [A] were washed.
Then, 2 L of a gold plating solution having a gold content of 20 g / L is added to the magnetic core particles [A] that have been subjected to acid treatment and washing treatment, and the temperature in the treatment layer is raised to 90 ° C. and stirred. Thus, a slurry was prepared. In this state, the magnetic core particles [A] were subjected to gold displacement plating while stirring the slurry. Thereafter, the slurry was left standing to cool to precipitate the particles, and the supernatant liquid was removed to prepare conductive particles [a] for the present invention.
2 L of pure water was added to the conductive particles [a] thus obtained, stirred for 2 minutes at room temperature, and then allowed to stand for 1 minute to precipitate the conductive particles [a], and the supernatant was removed. . This operation was further repeated twice, and then 2 L of pure water heated to 90 ° C. was added and stirred, and the resulting slurry was filtered through a filter paper to collect the conductive particles [a]. Then, the conductive particles [a] were dried by a dryer set at 90 ° C.
The obtained conductive particles [a] have a number average particle diameter of 12 μm, a BET specific surface area of 0.15 × 10 ³ m ² / kg, a coating layer thickness t of 111 nm, (the mass of gold forming the coating layer). ) / (Mass of the entire conductive particles [a]) N was 0.3.

[Formation of conductive elastomer layer]
A conductive elastomer material was prepared by dispersing 400 parts by weight of the conductive particles [a] in 100 parts by weight of addition-type liquid silicone rubber. By applying this conductive elastomer material to the surface of a releasable support plate (16) made of stainless steel having a thickness of 5 mm by screen printing, the thickness is reduced to 0 on the releasable support plate (16). A material layer (21A) for conductive elastomer having a thickness of 15 mm was formed (see FIGS. 5 and 6).
Next, a release treatment support plate 16 is obtained by subjecting the conductive elastomer material layer (21A) to curing at 120 ° C. for 1 hour while applying a magnetic field of 2 Tesla in the thickness direction by an electromagnet. A conductive elastomer layer (21B) having a thickness of 0.15 mm supported thereon was formed (see FIGS. 7 and 8).

In the above, the addition-type liquid silicone rubber used is a two-component type composed of a liquid A and a liquid B each having a viscosity of 250 Pa · s, and the cured product has a compression set of 5% and a durometer A hardness. Is 32 and the tear strength is 25 kN / m.
Here, the properties of the addition-type liquid silicone rubber and its cured product were measured as follows.
(I) The viscosity of the addition-type liquid silicone rubber was measured at 23 ± 2 ° C. using a B-type viscometer.
(Ii) The compression set of the cured silicone rubber was measured as follows.
The liquid A and the liquid B in the two-pack type addition type liquid silicone rubber were stirred and mixed at an equal ratio. Next, this mixture is poured into a mold, and after the defoaming treatment is performed on the mixture under reduced pressure, a curing treatment is performed under the conditions of 120 ° C. and 30 minutes to obtain a silicone having a thickness of 12.7 mm and a diameter of 29 mm. A cylindrical body made of a rubber cured product was produced, and post-cure was performed on this cylindrical body at 200 ° C. for 4 hours. The cylindrical body thus obtained was used as a test piece, and compression set at 150 ± 2 ° C. was measured in accordance with JIS K 6249.
(Iii) The tear strength of the cured silicone rubber was measured as follows.
A sheet having a thickness of 2.5 mm was produced by curing and post-curing the addition-type liquid silicone rubber under the same conditions as in (ii) above.
A crescent-shaped test piece was produced by punching from this sheet, and the tear strength at 23 ± 2 ° C. was measured according to JIS K 6249.
(Iv) Durometer A hardness is a value at 23 ± 2 ° C. in accordance with JIS K 6249, using five sheets prepared in the same manner as in (iii) above, and using the resulting stack as a test piece. Was measured.

[Formation of conductive part for connection]
A thin metal layer (17) made of copper having a thickness of 0.3 μm is formed by subjecting the surface of the conductive elastomer layer (21B) supported on the releasable support plate (16) to electroless plating. (See FIG. 9).
A pattern corresponding to the pattern of the electrode to be inspected formed in the test wafer W1 on the thin metal layer (17) by a photolithographic technique in which rectangular 15720 openings (18a) each having a size of 60 μm × 200 μm are formed Thus, a resist layer (18) having a thickness of 25 μm was formed (see FIG. 10).
Thereafter, the surface of the metal thin layer (17) is subjected to electrolytic copper plating, thereby forming a metal mask (19) made of copper having a thickness of 20 μm in the opening (18a) of the resist layer (18) (FIG. 11). reference).
In this state, the conductive elastomer layer (21B), the metal thin layer (17), and the resist layer (18) are subjected to laser processing using a carbon dioxide gas laser device, so that the releasable support plates (16 15) forming the conductive portion (21) for connection 15720 supported thereon, and then peeling off the remaining thin metal layer (17) and metal mask (19) from the surface of the conductive portion for connection (21); The remainder of the conductive elastomer layer (21B) was mechanically peeled from the surface of the releasable support (16) (see FIG. 12).
In the above, the laser processing conditions by the carbon dioxide laser device are as follows. That is, a carbon dioxide gas laser processing machine “ML-605GTX” (manufactured by Mitsubishi Electric Corporation) is used as an apparatus, and the laser beam diameter is 60 μm and the laser output is 0.8 mJ. Was irradiated with 10 shots to perform laser processing.

(Formation of insulation part)
A mold release support plate (16A) made of stainless steel having a thickness of 5 mm is prepared, and one molding spacer is arranged on the surface of the mold release support plate (16A). The frame plate (10) was aligned and arranged on the top, and the other molding spacer was aligned and arranged on the frame plate (10).
Next, an addition-type liquid silicone rubber used in the preparation of the conductive elastomer material is prepared. After the defoaming treatment is performed on the addition-type liquid silicone rubber under reduced pressure, the addition-type liquid silicone rubber is separated by screen printing. By applying to the moldable support plate (16A), filling the additional liquid silicone rubber into the openings of each of the two molding spacers and the opening (11) of the frame plate (10), the insulating portion A material layer (22A) was formed (see FIG. 13).
Next, the releasable support plate (16) on which the plurality of conductive portions (21) for connection are formed is superimposed on the releasable support plate (16A) on which the insulating layer material layer (22A) is formed. Thus, each of the conductive portions for connection (21) was infiltrated into the insulating portion material layer (22A) and brought into contact with the releasable support plate (16A) (see FIG. 14). Thereafter, in this state, by applying a pressure of 1500 kgf to the releasable support plate (16) and the releasable support plate (16A), while compressing the connecting conductive portion (21) in the thickness direction, for the insulating portion By performing the curing process of the material layer (22A), an insulating portion (22) that insulates each of the connecting conductive portions (21) from each other is integrated with the connecting conductive portion (21). The formed elastic anisotropic conductive film (20) was formed (see FIG. 15).
Then, the anisotropic anisotropic conductive film (20) was released from the releasable support plates (16) and (16A), and the forming spacer was removed, thereby manufacturing the anisotropic conductive connector of the present invention.

The elastic anisotropic conductive film in the obtained anisotropic conductive connector will be specifically described. Each of the elastic anisotropic conductive films has a horizontal dimension of 5.5 mm and a vertical dimension of 0.4 mm.
In each of the elastic anisotropic conductive films, 40 connecting conductive portions are arranged in a row in the horizontal direction at a pitch of 120 μm, and each of the connecting conductive portions has a horizontal dimension of 60 μm and a vertical direction. The dimensions are 200 μm, the thickness is about 140 μm, and the thickness of the insulating part is 100 μm.
Further, the thickness of the supported portion (one thickness of the bifurcated portion) in each of the elastic anisotropic conductive films is 20 μm.
Moreover, when the content rate of the electroconductive particle in the electroconductive part for a connection in each of an elastic anisotropic conductive film was investigated, it was about 30% in the volume fraction about all the electroconductive parts for a connection.

[Production of circuit board for inspection]
A test circuit board in which test electrodes are formed according to a pattern corresponding to the pattern of the test electrode on the test wafer W1 using alumina ceramics (linear thermal expansion coefficient 4.8 × 10 ⁻⁶ / K) as a substrate material is manufactured. did. This inspection circuit board has a rectangular shape with an overall dimension of 30 cm × 30 cm, and the inspection electrode has a horizontal dimension of 60 μm and a vertical dimension of 200 μm. Hereinafter, this inspection circuit board is referred to as “inspection circuit board T”.

[Production of sheet probe]
By preparing a laminated material in which a copper layer having a thickness of 15 μm is laminated on one surface of an insulating sheet made of polyimide having a thickness of 20 μm, and applying the laser processing to the insulating sheet in the laminated material, the insulating property 15720 through-holes each having a diameter of 40 μm that penetrate in the thickness direction of the sheet were formed according to a pattern corresponding to the pattern of the electrode to be inspected in the test wafer W1. Next, by performing photolithography and nickel plating treatment on the laminated material, a short-circuit portion integrally connected to the copper layer is formed in the through hole of the insulating sheet, and on the surface of the insulating sheet, A protruding surface electrode portion integrally connected to the short-circuit portion was formed. The diameter of the surface electrode portion was 50 μm, and the height from the surface of the insulating sheet was 20 μm. Thereafter, the copper layer in the laminated material is subjected to a photo-etching process to remove a part thereof to form a rectangular back electrode part of 70 μm × 210 μm, and further, a gold plating process is applied to the front electrode part and the back electrode part Was applied to form an electrode structure, thereby producing a sheet-like probe. Hereinafter, this sheet-like probe is referred to as “sheet-like probe M”.

[Evaluation of anisotropic conductive connector]
(1) Test 1:
The test wafer W1 is placed on the test table, and the anisotropic conductive connector is aligned on the test wafer W1 so that each of the connecting conductive portions is positioned on the electrode to be inspected of the test wafer W1. Arranged. Next, the inspection circuit board T is aligned and fixed on the anisotropic conductive connector so that each of the inspection electrodes is positioned on the connection conductive portion of the anisotropic conductive connector, and further, for inspection. The circuit board T was pressed downward with a load of 160 kg.
Then, at room temperature (25 ° C.), a voltage is sequentially applied to each of the inspection electrodes on the inspection circuit board T, and an electrical resistance between the inspection electrode to which the voltage is applied and the inspection electrode adjacent thereto is expressed as follows: It was measured as the electrical resistance between the conductive portions for connection in the anisotropic conductive connector (hereinafter referred to as “insulation resistance”), and the number of conductive portion pairs for connection having an insulation resistance of 5 MΩ or less was determined. Here, in the case where the insulation resistance between the conductive portions for connection is 5 MΩ or less, it may be difficult to actually use this in the electrical inspection of the integrated circuit formed on the wafer.
The results are shown in Table 1 below.

(2) Test 2:
The test wafer W2 is placed on a test bench equipped with an electric heater, and an anisotropic conductive connector is placed on the test wafer W1 so that each of the conductive portions for connection is positioned on the electrode to be inspected of the test wafer W2. The inspection circuit board T is aligned on the anisotropic conductive connector so that each of the inspection electrodes is positioned on the connection conductive portion of the anisotropic conductive connector. Further, the inspection circuit board T was pressed downward with a load of 32 kg (the load applied per connecting conductive portion was about 2 g on average).
Then, at room temperature (25 ° C.), about 15720 test electrodes on the test circuit board T, between the two test electrodes electrically connected to each other via the anisotropic conductive connector and the test wafer W1. Of the measured electrical resistance value is recorded as the electrical resistance of the conductive portion for connection in the anisotropic conductive connector (hereinafter referred to as “conducting resistance”). The number of conductive parts for connection having a resistance of 0.5Ω or more was determined. The above operation is referred to as “operation (1)”.
Next, the load for pressurizing the circuit board for inspection T is changed to 126 kg (the load applied to each conductive part for connection is about 8 g on average), and then the test table is heated to 125 ° C., and the temperature of the test table is After stabilization, it was left in this state for 1 hour. The above operation is referred to as “operation (2)”.
Subsequently, the test stand was cooled to room temperature, and then the pressure applied to the inspection circuit board T was released. The above operation is referred to as “operation (3)”.
And said operation (1), operation (2), and operation (3) were made into 1 cycle, and 500 cycles were performed continuously in total.
As described above, it is difficult to actually use the connection conductive portion having a conduction resistance of 0.5Ω or more in the electrical inspection of the integrated circuit formed on the wafer.
The above results are shown in Table 2 below.

(3) Test 3:
The sheet-like probe M is arranged on the test wafer W2 arranged on the test table so that the surface electrode portion thereof is located on the electrode to be inspected of the test wafer W2. The anisotropic conductive connector is positioned so that the connecting conductive portion is positioned on the back electrode portion of the sheet-like probe M, and the inspection circuit board T is loaded downward with a load of 126 kg (connecting conductive Except that the load applied to each part is about 8g on average, the conduction resistance of the conductive part for connection is measured in the same manner as in Test 2 above, and the conduction resistance is 0.5Ω or more. The number of conductive parts was determined.
The above results are shown in Table 3 below.

<Comparative example 1>
By using the same frame plate as in Example 1 and forming an elastic anisotropic conductive film having the following specifications in each of the openings of the frame plate in accordance with the method described in JP-A No. 2002-334732, a different difference for comparison. A positive conducting connector was produced.
The elastic anisotropic conductive film in the comparative anisotropic conductive connector obtained will be described. Each of the elastic anisotropic conductive films has a horizontal dimension of 5.5 mm and a vertical dimension of 0.4 mm.
In each of the elastic anisotropic conductive films, 40 connecting conductive portions are arranged in a row in the horizontal direction at a pitch of 120 μm, and each of the connecting conductive portions has a horizontal dimension of 60 μm and a vertical direction. The dimensions are 200 μm, the thickness is about 140 μm, and the thickness of the insulating part is 100 μm.
Further, the thickness of the supported portion (one thickness of the bifurcated portion) in each of the elastic anisotropic conductive films is 20 μm.
Moreover, when the content rate of the electroconductive particle in the electroconductive part for a connection in each elastic anisotropically conductive film was investigated, it was about 20% in the volume fraction.
The comparative anisotropic conductive connector was evaluated in the same manner as in Example 1. The results are shown in Tables 1 to 3.

As is clear from the results of Tables 1 to 3, according to the anisotropic conductive connector according to Example 1, even if the pitch of the conductive portions for connection in the elastic anisotropic conductive film is small, the connection Good conductivity is obtained in the conductive part, sufficient insulation is obtained between adjacent conductive parts for connection, and good electrical resistance against changes in the environment such as thermal history due to temperature changes. It was confirmed that the connection state was stably maintained, and that even when repeatedly used in a high temperature environment, good conductivity was maintained over a long period of time in all the conductive portions for connection.
The reason why such characteristics are obtained is considered to be as follows.
(1) After forming a conductive part for connection on the releasable support plate, the conductive part for connection is infiltrated into the material layer for insulating part, and the insulating part material layer is cured to cure the insulating part. Therefore, no conductive particles are present in the insulating portion, and thus an insulating portion having sufficient insulating properties can be obtained with certainty.
(2) Since the conductive elastomer layer is laser processed to form a conductive part for connection, the variation in the content ratio of the conductive particles in each conductive part for connection is extremely small. And stable conductivity can be obtained.
(3) Since each elastic anisotropic conductive film has a small area and a small absolute amount of thermal expansion in the surface direction, thermal expansion in the surface direction of the elastic anisotropic conductive film is reliably regulated by the frame plate. In addition, since the thermal expansion of the entire anisotropically conductive connector depends on the thermal expansion of the material constituting the frame plate, the positions of the conductive portion for connection and the electrode to be inspected even when subjected to a thermal history due to a temperature change. As a result of preventing the shift, a good electrical connection state is stably maintained.

  On the other hand, in the anisotropic conductive connector of Comparative Example 1, since conductive particles remain in the insulating portion, there are conductive portion pairs for connection with low insulation resistance. Due to the large variation in the content ratio of the conductive particles, a decrease in conductivity was observed for some of the conductive portions for connection when repeatedly used in a high temperature environment.

It is a top view which shows an example of the anisotropically conductive connector which concerns on this invention. It is a top view which expands and shows a part of anisotropic conductive connector shown in FIG. It is a top view which expands and shows the elastic anisotropic conductive film in the anisotropic conductive connector shown in FIG. It is sectional drawing for description which expands and shows the elastic anisotropically conductive film in the anisotropically conductive connector shown in FIG. It is sectional drawing for description which shows the state by which the material layer for conductive elastomers was formed on the releasable support plate. It is sectional drawing for description which expands and shows the material layer for electroconductive elastomers. It is sectional drawing for description which shows the state by which the magnetic field was acted on the thickness direction of the conductive elastomer material layer. It is sectional drawing for description which shows the state in which the electroconductive elastomer layer was formed on the releasable support plate. It is sectional drawing for description which shows the state by which the metal thin layer was formed on the conductive elastomer layer. It is sectional drawing for description which shows the state in which the resist layer which has an opening was formed on the metal thin layer. It is sectional drawing for description which shows the state in which the metal mask was formed in opening of a resist layer. It is sectional drawing for description which shows the state in which the several electroconductive part for a connection was formed according to the specific pattern on the releasable support body. It is sectional drawing for description which shows the state by which the frame board was arrange | positioned on the releasable support body, and the material layer for insulation parts was formed. It is sectional drawing for description which shows the state by which the releasable support board in which the electroconductive part for connection was formed was piled up on the releasable support board in which the material layer for insulation parts was formed. It is sectional drawing for description which shows the state by which the integral insulating part was formed around the electroconductive part for a connection. It is sectional drawing for description which shows the structure in an example of the wafer inspection apparatus using the anisotropically conductive connector which concerns on this invention. It is sectional drawing for description which shows the structure of the principal part in an example of the probe member which concerns on this invention. It is sectional drawing for description which shows the structure in the other example of the wafer inspection apparatus using the anisotropically conductive connector which concerns on this invention. It is a top view which expands and shows the elastic anisotropic conductive film in the other example of the anisotropically conductive connector which concerns on this invention. It is a top view which expands and shows the elastic anisotropic conductive film in the further another example of the anisotropic conductive connector which concerns on this invention. It is explanatory drawing which shows the state by which the conductive part for a connection was formed by removing only the peripheral part of the part used as the conductive part for a connection in a conductive elastomer layer. It is sectional drawing for description which shows the state in which the conductive part for a connection was formed by removing only the peripheral part of the part used as the conductive part for a connection in a conductive elastomer layer. It is a top view of the wafer for a test used in the example. It is explanatory drawing which shows the position of the to-be-tested electrode area | region of the integrated circuit formed in the test wafer shown in FIG. It is explanatory drawing which shows the to-be-inspected electrode of the integrated circuit formed in the wafer for a test shown in FIG. It is a top view of the frame board produced in the Example. It is explanatory drawing which expands and shows a part of frame board shown in FIG. It is sectional drawing for description which shows the structure of the metal mold | die for manufacturing the conventional anisotropically conductive connector. In the process of manufacturing the conventional anisotropically conductive connector, it is sectional drawing for description which shows the state by which the frame board was arrange | positioned in a metal mold | die and the molding material layer was formed. It is sectional drawing for description which shows the state by which the magnetic field was acted on the thickness direction of the molding material layer. It is sectional drawing for description which shows the direction of the magnetic field acted on a molding material layer in the manufacturing method of the conventional anisotropically conductive connector.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Probe member 2 Anisotropic conductive connector 3 Pressure plate 4 Wafer mounting base 5 Heater 6 Wafer 7 Electrode to be inspected 10 Frame plate 11 Opening 12 Air flow hole 13 Positioning holes 16 and 16A Release support plate 17 Metal thin layer 18 Resist layer 18a Opening 19 Metal mask 20 Elastic anisotropic conductive film 21 Connecting conductive portion 21A Conductive elastomer material layer 21B Conductive elastomer layer 22 Insulating portion 22A Insulating portion material layer 23 Protruding portion 26 Non-connecting conductive portion 27 Protruding Section 30 Circuit board for inspection 31 Inspection electrode 41 Insulating sheet 40 Sheet-like probe 42 Electrode structure 43 Front surface electrode section 44 Back surface electrode section 45 Short circuit section 50 Chamber 51 Exhaust pipe 55 O-ring 80 Upper mold 81 Substrate 82, 82a, 82b Ferromagnetic layer 83 Nonmagnetic layer 85 Lower mold 86 Substrate 87 87a, 87b Ferromagnetic Body layer 88 non-magnetic layer 90 the frame plate 91 the opening 95 the elastic anisotropically conductive film 95A molding material layer 96 conductive portion 97 insulating portion P conductive particles

Claims (12)

A frame plate in which a plurality of openings are formed corresponding to electrode regions where electrodes to be inspected are arranged in all or some of the integrated circuits formed on the wafer to be inspected, and each of the openings of the frame plate. An elastic polymer material comprising a plurality of elastic anisotropic conductive films arranged so as to be closed, each elastic anisotropic conductive film being arranged corresponding to an electrode to be inspected in an integrated circuit formed on the wafer A plurality of connecting conductive parts extending in the thickness direction, containing conductive particles exhibiting magnetism therein, and an insulating part made of an elastic polymer material that insulates the connecting conductive parts from each other A method of manufacturing an anisotropic conductive connector for wafer inspection,
A plurality of connections can be made on the releasable support plate by laser processing a conductive elastomer layer in which conductive particles exhibiting magnetism are contained in an elastic polymer material supported on the releasable support plate. Forming a conductive part,
For each of the connecting conductive parts formed on the releasable support plate, for the insulating part made of a liquid polymer substance forming material that is cured and becomes an elastic polymer substance so as to close the opening of the frame board A method for producing an anisotropic conductive connector for wafer inspection, comprising the step of forming an insulating portion by intrusion into a material layer and curing the insulating material layer in this state.   2. The method for producing an anisotropic conductive connector for wafer inspection according to claim 1, wherein the laser processing is performed by a carbon dioxide laser or an ultraviolet laser.   A metal mask is formed on the surface of the conductive elastomer layer according to the pattern of the conductive portion for connection to be formed, and then the conductive elastomer layer is laser processed to form a plurality of conductive portions for connection. A method for manufacturing an anisotropic conductive connector for wafer inspection according to claim 1 or 2.   4. The method of manufacturing an anisotropic conductive connector for wafer inspection according to claim 3, wherein the metal mask is formed by plating the surface of the conductive elastomer layer.   A thin metal layer is formed on the surface of the conductive elastomer layer, a resist layer having an opening formed in accordance with a specific pattern is formed on the surface of the thin metal layer, and a portion of the thin metal layer exposed from the opening of the resist layer 4. The method of manufacturing an anisotropic conductive connector for wafer inspection according to claim 3, wherein a metal mask is formed by plating the surface of the wafer.   A magnetic field is applied in the thickness direction to the conductive elastomer material layer in which conductive particles exhibiting magnetism are contained in a liquid elastomer material that is cured to become an elastic polymer substance. 6. The method for producing an anisotropic conductive connector for wafer inspection according to claim 1, wherein the conductive elastomer layer is formed by curing the material layer for elastomer. 7. The method for manufacturing an anisotropic conductive connector for wafer inspection according to claim 1, wherein the frame plate has a coefficient of linear thermal expansion of 3 × 10 ⁻⁵ / K or less. .   An anisotropic conductive connector for wafer inspection, which is obtained by the manufacturing method according to claim 1. For each of a plurality of integrated circuits formed on a wafer, a probe member used to perform electrical inspection of the integrated circuit in the state of the wafer,
An inspection circuit board in which an inspection electrode is formed on a surface according to a pattern corresponding to a pattern of an electrode to be inspected in an integrated circuit formed on a wafer to be inspected, and the inspection circuit board is disposed on the surface of the inspection circuit board. A probe member comprising the anisotropic conductive connector for wafer inspection according to claim 8.   On the anisotropic conductive connector, an insulating sheet, and a sheet formed of a plurality of electrode structures that extend through the insulating sheet in the thickness direction and are arranged according to a pattern corresponding to the pattern of the electrode to be inspected The probe member according to claim 9, wherein a probe is arranged. For each of a plurality of integrated circuits formed on a wafer, in a wafer inspection apparatus for performing an electrical inspection of the integrated circuit in a wafer state,
A wafer inspection comprising the probe member according to claim 9 or 10, wherein electrical connection to an integrated circuit formed on a wafer to be inspected is achieved via the probe member. apparatus. Each of the plurality of integrated circuits formed on the wafer is electrically connected to the tester via the probe member according to claim 9 or 10, and the electrical inspection of the integrated circuit formed on the wafer is executed. A wafer inspection method.

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