JP2007085833A - Anisotropically conductive connector for wafer inspection, its manufacturing method, probe card for wafer inspection, and wafer inspection device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an anisotropically conductive connector for surely achieving a satisfactory state of electrical connection to a wafer even if the pitch is extremely small between electrodes under inspection on the wafer which is an inspecting object with its contact members kept from being soon uncoupled, and to provide its manufacturing method, a probe card, and a wafer inspection device. <P>SOLUTION: This anisotropically conductive connector is obtained by: forming a material layer for a conductive elastomer containing conductive particles showing magnetism on a frame plate disposed on a support body; disposing a plurality of metallic masks showing magnetism on its surface, then thereto applying a magnetic field in a thickness direction while performing its hardening treatment thereby forming a conductive elastomer layer; laser-machining this to form a plurality of conductive parts for connection; piling up first and second intermediates, the first intermediate being obtained by forming a material layer for an insulation part between the conductive parts while the second intermediate being obtained by forming the plurality of contact members on a metal film to form material layer for an insulation part between them; and hardening-treating these material layers for insulation parts. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to an anisotropic conductive connector for wafer inspection used for conducting electrical inspection of a plurality of integrated circuits formed on a wafer in a wafer state, a method for manufacturing the same, and an anisotropic conductive connector for wafer inspection. The present invention relates to a wafer inspection probe card and a wafer inspection apparatus.

In general, in the manufacturing process of a semiconductor integrated circuit device, a large number of integrated circuits are formed on a wafer made of, for example, silicon, and then each of these integrated circuits has a defect by inspecting basic electrical characteristics. A probe test is performed to select the integrated circuit. Next, the semiconductor chip is formed by cutting the wafer, and the semiconductor chip is housed in an appropriate package and sealed. Further, each packaged semiconductor integrated circuit device is subjected to a burn-in test for selecting a semiconductor integrated circuit device having a potential defect by inspecting electrical characteristics in a high temperature environment.
In such an electrical inspection of an integrated circuit such as a probe test or a burn-in test, a probe card is used to electrically connect each of the electrodes to be inspected in the inspection object to a tester. Such a probe card includes an inspection circuit board on which inspection electrodes are formed according to a pattern corresponding to the pattern of the electrode to be inspected, an anisotropic conductive elastomer sheet disposed on the inspection circuit board, There are known ones comprising a sheet-like probe disposed on a directionally conductive elastomer sheet.

As the anisotropic conductive elastomer sheet in such a probe card, those having various structures are conventionally known. For example, Patent Document 1 discloses an anisotropic conductive sheet obtained by uniformly dispersing metal particles in an elastomer. A conductive elastomer sheet (hereinafter referred to as “dispersed anisotropic conductive elastomer sheet”) is disclosed, and Patent Document 2 and the like disclose that non-uniform distribution of conductive magnetic particles in the elastomer. An anisotropic conductive elastomer sheet (hereinafter referred to as an “unevenly anisotropic anisotropic conductive elastomer sheet”) in which a large number of conductive portions extending in the thickness direction and insulating portions that insulate them from each other is formed. Further, Patent Document 3 and the like disclose an unevenly distributed anisotropic conductive elastomer sheet in which a step is formed between the surface of the conductive portion and the insulating portion.
Among these anisotropically conductive elastomer sheets, the unevenly distributed anisotropically conductive elastomer sheet has a conductive portion formed according to a pattern corresponding to the pattern of the electrode to be inspected of the integrated circuit to be inspected. Compared with a conductive elastomer sheet, it is possible to achieve electrical connection between electrodes with high reliability even for an integrated circuit or the like in which the arrangement pitch of the electrodes to be inspected, that is, the distance between the centers of adjacent electrodes to be inspected is small. This is advantageous. Therefore, an unevenly distributed anisotropic conductive elastomer sheet is used in a probe test or burn-in test of a semiconductor integrated circuit device in which the pitch of electrodes to be inspected is small.

Thus, in a probe test performed on an integrated circuit formed on a wafer, conventionally, the wafer is divided into a plurality of areas in which, for example, 16 or 32 integrated circuits are formed among many integrated circuits. A method is adopted in which a probe test is collectively performed on all integrated circuits formed in this area, and a probe test is sequentially performed on integrated circuits formed in other areas. In recent years, in order to improve the inspection efficiency and reduce the inspection cost, for example, 64, 124, or all of the integrated circuits are collectively subjected to a probe test among a large number of integrated circuits formed on the wafer. It is requested.
On the other hand, in the burn-in test, the integrated circuit device to be inspected is very small and inconvenient to handle. Therefore, it is long to perform electrical inspection of many integrated circuit devices individually. Time is required, which leads to a considerably high inspection cost. For these reasons, a WLBI (Wafer Level Burn-in) test has been proposed in which a burn-in test of a large number of integrated circuits formed on a wafer is performed in a wafer state.

However, if the wafer to be inspected is a large one having a diameter of, for example, 8 inches or more and the number of electrodes to be inspected is, for example, 5000 or more, particularly 10,000 or more, the wafer to be inspected in each integrated circuit. Since the pitch of the inspection electrodes is extremely small, there are the following problems when using an unevenly distributed anisotropic conductive elastomer sheet in the probe test or the WLBI test.
(1) In order to inspect a wafer having a diameter of, for example, 8 inches (about 20 cm), it is necessary to use an unevenly distributed anisotropic conductive elastomer sheet having a diameter of about 8 inches. However, such an unevenly anisotropic anisotropic conductive elastomer sheet has a considerably large area as a whole, but each conductive part is fine, and the surface of the conductive part occupying the unevenly anisotropic anisotropic conductive elastomer sheet surface. Since the area ratio is small, it is extremely difficult to reliably manufacture the uneven distribution type anisotropic conductive elastomer sheet. Therefore, in the production of the anisotropic conductive elastomer sheet, the production yield of the anisotropic conductive elastomer sheet increases as a result of the extremely low yield, which in turn increases the inspection cost.
(2) The unevenly distributed anisotropic conductive elastomer sheet needs to be held and fixed with a specific positional relationship with the circuit board for inspection and the wafer to be inspected. However, since the anisotropic conductive elastomer sheet is flexible and easily deformed and has low handleability, when performing electrical connection to the inspection target electrode of the wafer to be inspected, It is extremely difficult to align and hold and fix the uneven distribution type anisotropic conductive elastomer sheet.
(3) The linear thermal expansion coefficient of the material constituting the wafer, such as silicon, is about 3.3 × 10 ⁻⁶ / K, while the material constituting the anisotropic conductive elastomer sheet, such as silicone rubber, is It is about 2.2 × 10 ⁻⁴ / K. Therefore, for example, at 25 ° C., when each of the wafer having a diameter of 20 cm and the anisotropic conductive elastomer sheet is heated from 20 ° C. to 120 ° C., the change in the diameter of the wafer is theoretically 0.0066 cm. However, the change in the diameter of the anisotropically conductive elastomer sheet reaches 0.44 cm. Thus, the coefficient of thermal expansion differs greatly between the material (for example, silicon) constituting the integrated circuit device to be inspected and the material (for example, silicone rubber) constituting the unevenly distributed anisotropic conductive elastomer sheet, In the burn-in test, even if the required alignment and holding / fixing of the wafer and the anisotropically anisotropic conductive elastomer sheet have been realized once, if the thermal history due to temperature change is received, As a result of displacement between the conductive portion of the conductive elastomer sheet and the electrode to be inspected on the wafer, it is difficult to maintain a stable connection state by changing the electrical connection state.

In order to solve the above-described problem, a frame plate having a plurality of openings formed corresponding to electrode regions where electrodes to be inspected of an integrated circuit are formed on a wafer to be inspected, and each of the openings of the frame plate are closed. An anisotropic conductive connector comprising a plurality of elastic anisotropic conductive films arranged in this manner has been proposed (see, for example, Patent Document 4).
According to such an anisotropic conductive connector, the following effects can be obtained.
(1) Each of the openings formed in the frame plate has a size corresponding to the electrode region of the integrated circuit in the wafer to be inspected. Therefore, the elastic anisotropic conductive film disposed in each of the openings has a size. Therefore, it is easy to form individual elastic anisotropic conductive films.
(2) Since each of the elastic anisotropic conductive films is supported by the frame plate, the elastic anisotropic conductive film is not easily deformed and easy to handle. Also, by forming a positioning mark (for example, a hole) in the frame plate in advance, In the electrical connection operation, alignment and holding / fixing with respect to the integrated circuit device can be easily performed.
(3) Since the elastic anisotropic conductive film having a small size has a small absolute amount of thermal expansion even when subjected to a thermal history, the thermal expansion of the elastic anisotropic conductive film is restricted by the frame plate, and the anisotropic conductive film The thermal expansion of the entire connector depends on the thermal expansion of the material that makes up the frame plate. However, as a result of preventing the displacement between the conductive portion of the anisotropic conductive connector and the electrode to be inspected on the wafer, a good electrical connection state is stably maintained.

And such an anisotropically conductive connector is manufactured as follows.
A mold for forming an elastic anisotropic conductive film comprising an upper mold 80 and a lower mold 85 paired therewith as shown in FIG. 38 is prepared. Each of the upper mold 80 and the lower mold 85 in the mold includes a plurality of ferromagnetic layers arranged on the substrates 81 and 86 according to a pattern corresponding to the pattern of the conductive portion of the anisotropic conductive elastomer sheet to be molded. 82 and 87, and nonmagnetic layers 83 and 88 arranged at locations other than the locations where these ferromagnetic layers 82 and 87 are formed, and the ferromagnetic layers 82 and 87 and the nonmagnetic layers are provided. The body layers 83 and 88 form a molding surface. The upper mold 80 and the lower mold 85 are arranged so that the corresponding ferromagnetic layers 82 and 87 face each other.
In such a mold, as shown in FIG. 39, a frame plate 90 in which an opening 91 is formed corresponding to an electrode region in a wafer to be inspected is aligned and disposed, and a high elasticity is obtained by a curing process. A molding material layer 95A in which conductive particles P exhibiting magnetism are dispersed in a polymer substance-forming material that is a molecular substance is formed so as to close each opening 91 of the frame plate 90. Here, the conductive particles P contained in the molding material layer 95A are in a state of being dispersed in the molding material layer 95A.

  Then, for example, a pair of electromagnets are arranged on the upper surface of the upper die 80 and the lower surface of the lower die 85 and are operated, so that the molding material layer 95A has the ferromagnetic layer 82 of the upper die 80 and the same. In a portion between the corresponding lower die 85 and the ferromagnetic layer 87, that is, a portion serving as a conductive portion, a magnetic field having a stronger intensity than the other portions is applied in the thickness direction of the molding material layer 95A. As a result, the conductive particles P dispersed in the molding material layer 95A are, as shown in FIG. 40, a portion of the molding material layer 95A to which a high-intensity magnetic field is applied, that is, the ferromagnetic material of the upper mold 80. They are gathered at a portion between the body layer 82 and the corresponding ferromagnetic layer 87 of the lower mold 85, and are further aligned in the thickness direction. In this state, by performing a curing process on the molding material layer 95A, a plurality of conductive portions 96 contained in a state in which the conductive particles P are aligned so as to be aligned in the thickness direction, and these conductive portions 96 are mutually connected. An elastic anisotropic conductive film 95 composed of an insulating portion 97 to be insulated is molded in a state where the peripheral edge portion is supported by the opening edge portion of the frame plate 90, whereby an anisotropic conductive connector is manufactured.

However, such a manufacturing method has the following problems.
When electrical inspection is performed on a wafer in which electrodes to be inspected are arranged at a high density with a small pitch, it is necessary to use anisotropic conductive connectors in which the pitch of the conductive portions is small and arranged at a high density. Thus, in manufacturing such an anisotropic conductive connector, it is naturally necessary to use the upper mold 80 and the lower mold 85 in which the ferromagnetic layers 82 and 87 are arranged at a very small pitch. .
However, when such an upper die 80 and lower die 85 are used to form the elastic anisotropic conductive film 95 as described above, the ferromagnetic materials adjacent to each other in each of the upper die 80 and the lower die 85. Since the separation distance between the layers 82 and 87 is small, as shown in FIG. 41, the direction from the certain ferromagnetic layer 82a in the upper mold 80 toward the corresponding ferromagnetic layer 87a in the lower mold 85 (arrow) X), for example, a direction from the ferromagnetic layer 82a of the upper mold 80 toward the ferromagnetic layer 87b adjacent to the corresponding ferromagnetic layer 87a of the lower mold 85 (indicated by an arrow Y) or A magnetic field also acts from the ferromagnetic layer 82b of the upper mold 80 to the ferromagnetic layer 87a of the lower mold 85. Therefore, in the molding material layer 95A, it is difficult to gather the conductive particles P in a portion located between the ferromagnetic layer 82a of the upper mold 80 and the corresponding ferromagnetic layer 87a of the lower mold 85. Thus, the conductive particles also gather at a portion located between the ferromagnetic layer 82a of the upper mold 80 and the ferromagnetic layer 87b of the lower mold 85, and the conductive particles P are transferred to the molding material layer 95A. As a result, it is difficult to obtain an anisotropic conductive connector having a desired conductive portion and insulating portion.

Further, the above-mentioned pro card has the following problems.
In order to construct a probe card, the test circuit board, the anisotropic conductive connector, and the sheet-like probe require three parts, so the overall structure is complicated, and when assembling these parts, Since the alignment of the anisotropic conductive connector and the alignment of the sheet-like probe are necessary, the assembly work is extremely complicated.
In addition, since the electrode probe is disposed on an insulating sheet made of, for example, polyimide, the sheet-like probe is displaced from the electrode to be inspected due to the thermal expansion of the insulating sheet when subjected to a thermal history due to a temperature change. As a result, it is difficult to maintain a stable connection state by changing the electrical connection state.
As a means for solving such a problem, instead of arranging a sheet-like probe, a contact member made of metal is integrally formed on the conductive portion for connection of the elastic anisotropic conductive film in the anisotropic conductive connector. It is conceivable to form. Such a contact member is formed, for example, by forming a resist layer on the surface of the elastic anisotropic conductive film other than the connection conductive portion, and then subjecting the surface of the connection conductive portion to sputtering or electroless plating. By applying, it can be formed. However, in such an anisotropic conductive connector, since the adhesiveness between the elastic polymer material constituting the elastic anisotropic conductive film and the metal constituting the contact member is low, the anisotropic conductive connector is repeatedly used. In such a case, there is a problem that the contact member peels off from the surface of the connecting conductive portion at an early stage, and therefore, a long service life cannot be obtained.

JP 51-93393 A Japanese Patent Laid-Open No. 53-147772 JP-A-61-250906 JP 2002-334732 A

The present invention has been made on the basis of the above circumstances, and its purpose is to achieve good electrical connection to a wafer even when the pitch of electrodes to be inspected on the wafer to be inspected is extremely small. To provide an anisotropic conductive connector for wafer inspection and a method for manufacturing the same, which can reliably achieve the state, and the contact member does not detach from the conductive portion for connection at an early stage, and a long service life is obtained. It is in.
Another object of the present invention is to provide a wafer inspection probe card capable of reliably achieving a good electrical connection state to a wafer even when the pitch of electrodes to be inspected on the wafer to be inspected is extremely small. A wafer inspection apparatus is provided.

The method for manufacturing an anisotropic conductive connector for wafer inspection according to the present invention includes a plurality of openings corresponding to electrode regions in which electrodes to be inspected are arranged in all or a part of integrated circuits formed on a wafer to be inspected. A plurality of connecting conductive parts each including conductive particles exhibiting magnetism in an elastic polymer material arranged according to a pattern corresponding to the pattern of the electrode to be inspected in the electrode region, and A plurality of elastic anisotropic conductive films arranged and supported by the frame plate so as to close the openings, and each of the elastic anisotropic conductive films. A method of manufacturing an anisotropic conductive connector for wafer inspection, comprising a plurality of contact members made of metal disposed on a conductive part for connection,
A plurality of conductive elastomer material layers in which conductive particles exhibiting magnetism are contained in a liquid polymer substance forming material that is cured to become an elastic polymer substance are provided on a frame plate disposed on a support. Each of the openings of the frame plate is formed to be closed, and a metal mask showing magnetism is arranged on the surface of the conductive elastomer material layer according to a specific pattern corresponding to the pattern of the electrode to be inspected. A magnetic field is applied to the conductive elastomer material layer in the thickness direction, and each of the conductive elastomer material layers is cured to form a plurality of conductive elastomer layers. A frame disposed on the support by removing a peripheral portion of the portion where the metal mask is disposed by laser processing the functional elastomer layer Forming a plurality of connecting conductive portions arranged in the respective openings according to the specific pattern, and being cured between the connecting conductive portions on the support to become an elastic polymer material Forming a first intermediate by forming an insulating material layer comprising:
A plurality of contact members arranged according to a pattern corresponding to the conductive portion for connection are formed on the metal film, and a polymer material forming material that is cured and becomes an elastic polymer material between the contact members. Forming a second intermediate by forming an insulating material layer;
The first intermediate body and the second intermediate body are stacked so that each of the contact members corresponding to each of the connecting conductive portions is in contact with each other, and in this state, the first intermediate body and the second intermediate body And a step of forming an insulating part by curing the insulating part material layer of each of the two intermediates.

  In the method for producing an anisotropic conductive connector for wafer inspection according to the present invention, the laser processing is preferably performed by a carbon dioxide laser or an ultraviolet laser.

  The anisotropic conductive connector for wafer inspection according to the present invention is obtained by the above manufacturing method.

  The probe card for wafer inspection according to the present invention is an inspection in which a plurality of inspection electrodes are formed on the surface according to a pattern corresponding to the pattern of the electrode to be inspected in all or some of the integrated circuits formed on the wafer to be inspected. And a wafer inspection anisotropic conductive connector disposed on the surface of the inspection circuit board.

The wafer inspection apparatus of the present invention is a wafer inspection apparatus that performs electrical inspection of a plurality of integrated circuits formed on a wafer in the state of the wafer,
It comprises the probe card for wafer inspection described above.

According to the method for manufacturing an anisotropic conductive connector for wafer inspection of the present invention, a metal mask showing magnetism on a conductive elastomer material layer according to a specific pattern corresponding to a pattern of an electrode to be inspected on a wafer to be inspected The conductive elastomer layer obtained by applying a magnetic field in the thickness direction of the conductive elastomer material layer and curing the conductive elastomer material layer with the metal mask disposed thereon The conductive particles in the part are dense, and the conductive particles in the other part are sparse. Therefore, by laser processing the conductive elastomer layer through the metal mask, the portion of the conductive elastomer layer where the metal mask is not disposed can be easily removed. The part can be reliably formed according to a specific pattern. And, after forming a plurality of conductive portions for connection arranged according to a specific pattern, forming an insulating portion material layer between these conductive portions for connection and performing a curing process to form an insulating portion Thus, it is possible to reliably obtain an insulating part in which no conductive particles are present.
And the 1st intermediate body in which the insulating part material layer is formed between several conductive parts for connection, and the 2nd intermediate body in which the insulating part material layer is formed between several contact members In the anisotropic conductive connector obtained, the contact member is fixed in a state of being embedded in the insulating portion.
Therefore, according to the anisotropic conductive connector for wafer inspection of the present invention obtained by such a method, even if the pitch of the electrodes to be inspected in the wafer to be inspected is extremely small, good electrical conductivity with respect to the wafer is obtained. The connected state can be reliably achieved, and the contact member is not detached from the connecting conductive portion at an early stage, and a long service life can be obtained.
In addition, since a contact member is arranged on the connecting conductive portion of the elastic anisotropic conductive film, it is not necessary to use a sheet-like probe when inspecting the wafer. A card can be obtained, and a connection failure due to a positional deviation of the sheet-like probe can be avoided.

  According to the wafer inspection probe card and the wafer inspection apparatus of the present invention, since the anisotropic conductive connector for wafer inspection is provided, the pitch of the electrodes to be inspected on the wafer to be inspected is extremely small. However, it is possible to reliably achieve a good electrical connection to the wafer.

Hereinafter, embodiments for carrying out the present invention will be described in detail.
[Anisotropic conductive connector]
1 is a plan view showing an anisotropic conductive connector for wafer inspection of a first example according to the present invention, and FIG. 2 is an enlarged view of a portion of the anisotropic conductive connector for wafer inspection shown in FIG. FIG. 3 is a plan view illustrating an enlarged part of the anisotropic conductive connector for wafer inspection shown in FIG.

The anisotropic conductive connector for wafer inspection (hereinafter also simply referred to as “anisotropic conductive connector”) 20 of the first example is an electrical circuit for each of the integrated circuits on a wafer on which a plurality of integrated circuits are formed, for example. The frame plate 21 is used to perform inspection in the state of a wafer and has a plurality of openings 22 (shown by broken lines). The opening 22 of the frame plate 21 is formed corresponding to the electrode region where the electrodes to be inspected are arranged in all the integrated circuits formed on the wafer to be inspected. A plurality of elastic anisotropic conductive films 23 having conductivity in the thickness direction are arranged on the frame plate 21 so as to close one opening 22 and supported by the opening edge.
In each of the elastic anisotropic conductive films 23, as shown in FIG. 2, a plurality of connecting conductive portions 24 extending in the thickness direction (direction perpendicular to the paper surface in FIG. 2) are located in the openings 22 of the frame plate 21. Between the adjacent connecting conductive portions 24, an insulating portion 25 that insulates them from each other is formed in a state of being integrally bonded to the connecting conductive portion 24. Each of the connecting conductive portions 24 is arranged according to a pattern corresponding to the pattern of the electrode to be inspected in the integrated circuit formed on the wafer to be inspected, and is electrically connected to the electrode to be inspected in the inspection of the wafer. Is.
As shown in FIG. 3, the connecting conductive portion 24 in the elastic anisotropic conductive film 23 is densely contained in the elastic polymer material in a state in which the conductive particles P exhibiting magnetism are aligned in the thickness direction. Has been. In contrast, the insulating portion 25 is made of an elastic polymer material that does not contain the conductive particles P at all. The elastic polymer material constituting the connecting conductive portion 24 and the elastic polymer material constituting the insulating portion 25 may be of different types or the same type.
A flat contact member 27 made of metal is disposed on each surface of the connecting conductive portion 24 in the elastic anisotropic conductive film 23. Each of these contact members 27 is embedded in the insulating portion 25 and is provided in a state where the side surface of the contact member 27 is integrally bonded to the insulating portion 25. Further, in the illustrated example, the contact member 27 and the peripheral portion of the contact member 27 in the insulating portion 25 are protruded from the surface, so that even when the contact member 27 is pressurized with a small pressurizing force, the connection is achieved. As a result of the deformation so that the conductive portion 24 is reliably compressed in the thickness direction, high conductivity is obtained.

Although the thickness of the frame board 21 changes with materials, it is preferable that it is 25-600 micrometers, More preferably, it is 40-400 micrometers.
When this thickness is less than 25 μm, the strength required when using the anisotropic conductive connector 20 is not obtained, the durability tends to be low, and the shape of the frame plate 21 is maintained. A degree of rigidity cannot be obtained, and the handleability of the anisotropic conductive connector 20 is low. On the other hand, when the thickness exceeds 600 μm, the elastic anisotropic conductive film 23 formed in the opening 22 becomes excessively thick and it is difficult to obtain good conductivity in the connecting conductive portion 24. It may become.
The shape and size in the surface direction of the opening 22 of the frame plate 21 are designed according to the size, pitch, and pattern of the electrodes to be inspected on the wafer to be inspected.

The material constituting the frame plate 21 is not particularly limited as long as the frame plate 21 is not easily deformed and has a rigidity that allows the shape to be stably maintained. For example, a metal material, a ceramic material Various materials such as a resin material can be used. When the frame plate 21 is made of, for example, a metal material, an insulating coating may be formed on the surface of the frame plate 21.
Specific examples of the metal material constituting the frame plate 21 include metals such as iron, copper, nickel, chromium, cobalt, magnesium, manganese, molybdenum, indium, lead, palladium, titanium, tungsten, aluminum, gold, platinum, and silver. Or the alloy or alloy steel which combined 2 or more types of these is mentioned.
Specific examples of the resin material constituting the frame plate 21 include a liquid crystal polymer and a polyimide resin.
Moreover, as a material which comprises the frame board 21, it is preferable to use a thing with a linear thermal expansion coefficient of 3 * 10 < ^-5 > / K or less, More preferably, it is -1 * 10 < ^-7 > -1 * 10 < ^-5 > / K. Particularly preferably, it is 1 × 10 ⁻⁶ to 8 × 10 ⁻⁶ / K.
Specific examples of such materials include Invar type alloys such as Invar, Elinvar type alloys such as Elinvar, magnetic metal alloys such as Super Invar, Kovar, and 42 alloy, or alloy steel.

  The total thickness of the elastic anisotropic conductive film 23 (thickness in the connecting conductive portion 24 in the illustrated example) is preferably 50 to 2000 μm, more preferably 70 to 1000 μm, and particularly preferably 80 to 500 μm. If this thickness is 50 μm or more, the elastic anisotropic conductive film 23 having sufficient strength can be obtained reliably. On the other hand, if the thickness is 2000 μm or less, the connecting conductive portion 24 having the required conductive characteristics can be obtained reliably.

As the elastic polymer material forming the connection conductive portion 24 and the insulating portion 25 in the elastic anisotropic conductive film 23, a heat-resistant polymer material having a crosslinked structure is preferable. Various materials can be used as the curable polymer material-forming material that can be used to obtain such a crosslinked polymer material, but liquid silicone rubber is preferred.
The liquid silicone rubber may be an addition type or a condensation type, but an addition type liquid silicone rubber is preferred. This addition-type liquid silicone rubber is cured by a reaction between a vinyl group and a Si—H bond, and is a one-pack type (one-component type) made of polysiloxane containing both a vinyl group and a Si—H bond. And a two-component type (two-component type) composed of a polysiloxane containing a vinyl group and a polysiloxane containing a Si-H bond. In the present invention, a two-component addition-type liquid silicone is used. It is preferable to use rubber.

As the addition type liquid silicone rubber, those having a viscosity at 23 ° C. of 100 to 1,250 Pa · s are preferably used, more preferably 150 to 800 Pa · s, and particularly preferably 250 to 500 Pa · s. . In the case where the viscosity is less than 100 Pa · s, in the conductive elastomer material for obtaining the connecting conductive portion 24 described later, the sedimentation of the conductive particles in the addition-type liquid silicone rubber is likely to occur, which is favorable. Storage stability is not obtained, and when a parallel magnetic field is applied to the conductive elastomer material layer described later, the conductive particles are not aligned so as to be aligned in the thickness direction, and the conductive particles are chained in a uniform state. May be difficult to form. On the other hand, when the viscosity exceeds 1,250 Pa · s, the resulting conductive elastomer material has a high viscosity. Therefore, even if a parallel magnetic field is applied to the conductive elastomer material layer, the conductive particles May not move sufficiently, and it may be difficult to orient the conductive particles so that they are aligned in the thickness direction.
The viscosity of such an addition type liquid silicone rubber can be measured by a B type viscometer.

When the elastic anisotropic conductive film 23 is formed of a cured liquid silicone rubber (hereinafter referred to as “silicone rubber cured product”), the cured silicone rubber has a compression set at 150 ° C. of 10% or less. Preferably, it is 8% or less, more preferably 6% or less. When this compression set exceeds 10%, when the anisotropically conductive connector 20 obtained is repeatedly used many times or when it is repeatedly used in a high temperature environment, the connection conductive portion 24 is permanently set. As a result, disorder of the chain of conductive particles in the connecting conductive portion 24 occurs, and it becomes difficult to maintain the required conductivity.
Here, the compression set of the cured silicone rubber can be measured by a method based on JIS K 6249.

The cured silicone rubber forming the elastic anisotropic conductive film 23 preferably has a durometer A hardness at 23 ° C. of 10 to 60, more preferably 15 to 60, and particularly preferably 20 to 60. Is. When the durometer A hardness is less than 10, the insulating portions 25 that insulate the connecting conductive portions 24 from each other when pressed are excessively distorted, and required insulation between the connecting conductive portions 24 is obtained. May be difficult to maintain. On the other hand, when the durometer A hardness exceeds 60, a pressing force with a considerably large load is required to give an appropriate distortion to the connecting conductive portion 24. Destruction is likely to occur.
Further, when a silicone rubber cured product having a durometer A hardness outside the above range is used, when the anisotropically conductive connector 20 obtained is repeatedly used many times, the connecting conductive portion 24 is permanently set. As a result, the chain of conductive particles in the connecting conductive portion 24 is disturbed, and it becomes difficult to maintain the required conductivity.
Further, when the anisotropic conductive connector 20 is used in a test under a high temperature environment, for example, a WLBI test, the cured silicone rubber forming the elastic anisotropic conductive film 23 has a durometer A hardness of 25 to 40 at 23 ° C. It is preferable.
When a cured silicone rubber having a durometer A hardness outside the above range is used, when the anisotropically conductive connector 20 obtained is repeatedly used in a test under a high temperature environment, the conductive part 24 for connection is permanently attached. Distortion is likely to occur, and as a result, the chain of conductive particles in the connecting conductive portion 24 is disturbed, so that it becomes difficult to maintain the required conductivity.
Here, the durometer A hardness of the cured silicone rubber can be measured by a method based on JIS K 6249.

The cured silicone rubber forming the elastic anisotropic conductive film 23 preferably has a tear strength at 23 ° C. of 8 kN / m or more, more preferably 10 kN / m or more, more preferably 15 kN / m. As described above, it is particularly preferably 20 kN / m or more. When the tear strength is less than 8 kN / m, the durability tends to be lowered when the elastic anisotropic conductive film 23 is excessively strained.
Here, the tear strength of the cured silicone rubber can be measured by a method based on JIS K 6249.

  As the addition-type liquid silicone rubber having such properties, those commercially available as liquid silicone rubbers “KE2000” series and “KE1950” series manufactured by Shin-Etsu Chemical Co., Ltd. can be used.

In the present invention, an appropriate curing catalyst can be used to cure the addition type liquid silicone rubber. As such a curing catalyst, a platinum-based catalyst can be used. Specific examples thereof include chloroplatinic acid and salts thereof, platinum-unsaturated siloxane complex, vinylsiloxane-platinum complex, platinum and Examples include known complexes such as 1,3-divinyltetramethyldisiloxane complex, triorganophosphine or phosphite and platinum complex, acetyl acetate platinum chelate, and cyclic diene and platinum complex.
The amount of the curing catalyst used is appropriately selected in consideration of the type of the curing catalyst and other curing conditions, but is usually 3 to 15 parts by weight with respect to 100 parts by weight of the addition type liquid silicone rubber.

Further, in the addition type liquid silicone rubber, for the purpose of improving the thixotropy of the addition type liquid silicone rubber, adjusting the viscosity, improving the dispersion stability of the conductive particles, or obtaining a substrate having high strength, etc. As needed, inorganic fillers, such as normal silica powder, colloidal silica, airgel silica, and alumina, can be contained.
The amount of such inorganic filler used is not particularly limited, but if it is used in a large amount, it is not preferable because the orientation of the conductive particles by the magnetic field cannot be sufficiently achieved.

  As the conductive particles P contained in the connecting conductive portion 24 in the elastic anisotropic conductive film 23, the surface of the core particles showing magnetism (hereinafter also referred to as “magnetic core particles”) is coated with a highly conductive metal. Is preferably used.

The magnetic core particles for obtaining the conductive particles P preferably have a number average particle diameter of 3 to 40 μm.
Here, the number average particle diameter of the magnetic core particles refers to that measured by a laser diffraction scattering method.
When the number average particle diameter is 3 μm or more, it is easy to obtain a conductive portion for connection 24 that is easily deformed under pressure, has a low resistance value, and high connection reliability. On the other hand, when the number average particle diameter is 40 μm or less, the fine connecting conductive portion 24 can be easily formed, and the obtained connecting conductive portion 24 tends to have stable conductivity. .

The magnetic core particles preferably have a BET specific surface area of 10 to 500 m ² / kg, more preferably 20 to 500 m ² / kg, particularly preferably 50 to 400 m ² / kg.
If the BET specific surface area is 10 m ² / kg or more, the magnetic core particles have a sufficiently large area that can be plated, so that the magnetic core particles can be reliably plated with a required amount, Accordingly, the conductive particles P having high conductivity can be obtained, and the contact area between the conductive particles P is sufficiently large, so that stable and high conductivity can be obtained. On the other hand, if the BET specific surface area is 500 m ² / kg or less, the magnetic core particles will not be brittle, and will not break when subjected to physical stress, maintaining stable and high conductivity. Is done.

The magnetic core particles preferably have a particle diameter variation coefficient of 50% or less, more preferably 40% or less, still more preferably 30% or less, and particularly preferably 20% or less.
Here, the variation coefficient of the particle diameter is obtained by the formula: (σ / Dn) × 100 (where σ represents a standard deviation value of the particle diameter, and Dn represents the number average particle diameter of the particles). It is
If the variation coefficient of the particle diameter is 50% or less, the uniformity of the particle diameter is large, so that the connection conductive portion 24 with small variation in conductivity can be formed.

As the material constituting the magnetic core particles, iron, nickel, cobalt, those metals coated with copper or resin, and the like can be used, but those having a saturation magnetization of 0.1 Wb / m ² or more are preferable. More preferably, it is 0.3 Wb / m ² or more, particularly preferably 0.5 Wb / m ² or more, and specific examples include iron, nickel, cobalt, and alloys thereof.
If the saturation magnetization is 0.1 Wb / m ² or more, the conductive particles P can be easily moved in the conductive elastomer material layer for forming the elastic anisotropic conductive film 23 by a method described later. As a result, the conductive particles P can be reliably moved to the conductive conductive parts for connection in the conductive elastomer material layer to form a chain of conductive particles P.

The conductive particles P used for obtaining the connection conductive portion 24 are obtained by coating the surface of the magnetic core particles with a highly conductive metal.
Here, “highly conductive metal” refers to a metal having an electrical conductivity at 0 ° C. of 5 × 10 ⁶ Ω ⁻¹ m ⁻¹ or more.
As such a highly conductive metal, gold, silver, rhodium, platinum, chromium, or the like can be used. Among these, gold is preferably used because it is chemically stable and has high conductivity.

In the conductive particles P, the ratio of the highly conductive metal to the core particles [(mass of high conductive metal / mass of core particles) × 100] is 15% by mass or more, preferably 25 to 35% by mass. .
When the ratio of the highly conductive metal is less than 15% by mass, when the anisotropically conductive connector 20 obtained is repeatedly used in a high temperature environment, the conductivity of the conductive particles P is significantly reduced. It is not possible to maintain the conductivity.

The conductive particles P have a coating layer thickness t of 50 nm or more, preferably 100 to 200 nm, calculated from the following formula (1).
Formula (1) t = [1 / (Sw · ρ)] × [N / (1-N)]
[Where t is the thickness (m) of the coating layer made of a highly conductive metal, Sw is the BET specific surface area (m ² / kg) of the core particle, ρ is the specific gravity (kg / m ³ ) of the highly conductive metal, and N is The value of (weight of highly conductive metal / weight of conductive particles as a whole) is shown. ]

The above mathematical formula is derived as follows.
(I) When the weight of the magnetic core particles is Mp (kg), the surface area S (m ² ) of the magnetic core particles is
S = Sw · Mp ......... Formula (2)
Sought by.
(Ii) When the weight of the coating layer made of a highly conductive metal is m (kg), the volume V (m ³ ) of the coating layer is
V = m / ρ ... Formula (3)
Sought by.
(Iii) Here, assuming that the thickness of the coating layer is uniform over the entire surface of the conductive particles, t = V / S, and substituting the above formulas (2) and (3) into this, The thickness t of the coating layer is
t = (m / ρ) / (Sw · Mp) = m / (Sw · ρ · Mp) Equation (4)
Sought by.
(Iv) Since N is the ratio of the mass of the coating layer to the mass of the entire conductive particle, the value of N is
N = m / (Mp + m) (5)
Sought by.
(V) Dividing the numerator and denominator on the right side of this equation (5) by Mp,
N = (m / Mp) / (1 + m / Mp). When (1 + m / Mp) is applied to both sides,
N (1 + m / Mp) = m / Mp,
N + N (m / Mp) = m / Mp, and when N (m / Mp) is shifted to the right side,
N = m / Mp−N (m / Mp) = (m / Mp) (1-N), and dividing both sides by (1-N) yields N / (1-N) = m / Mp,
Therefore, the weight Mp of the magnetic core particle is
Mp = m / [N / (1-N)] = m (1-N) / N Expression (6)
Sought by.
(Vi) Then, when substituting equation (6) into equation (4),
t = 1 / [Sw · ρ · (1-N) / N]
= [1 / (Sw · ρ)] × [N / (1-N)]
Is guided.

  If the thickness t of the coating layer is 50 nm or more, when the anisotropic conductive connector 20 is repeatedly used in a high temperature environment, the ferromagnetic material constituting the magnetic core particles constitutes the highly conductive metal constituting the coating layer. Even when the inside of the conductive particles P is transferred to the surface, a high proportion of highly conductive metal is present on the surface of the conductive particles P, so that the conductivity of the conductive particles P is not significantly reduced, and the desired conductivity is achieved. Is maintained.

Moreover, it is preferable that the number average particle diameter of the electroconductive particle P is 3-40 micrometers, More preferably, it is 6-25 micrometers.
By using such conductive particles P, the obtained elastic anisotropic conductive film 23 can be easily deformed under pressure, and the conductive particles in the conductive portion 24 for connection in the elastic anisotropic conductive film 23 can be obtained. Sufficient electrical contact between P is obtained.
Further, the shape of the conductive particles P is not particularly limited, but spherical particles, star-shaped particles, or agglomerated particles 2 can be easily dispersed in the polymer substance-forming material. It is preferable that it is a lump with secondary particles.

Such conductive particles P can be obtained by the following method, for example.
First, magnetic core particles having a required particle diameter are prepared by making a ferromagnetic material into particles by a conventional method or preparing commercially available ferromagnetic particles and classifying the particles.
Here, the particle classification process can be performed by a classification device such as an air classification device or a sonic sieving device.
Specific conditions for the classification treatment are appropriately set according to the number average particle diameter of the target magnetic core particles, the type of the classification device, and the like.
Next, the surface of the magnetic core particle is treated with an acid, and further, for example, washed with pure water to remove impurities such as dirt, foreign matter, and oxide film present on the surface of the magnetic core particle. Conductive particles are obtained by coating the surface of the particles with a highly conductive metal.
Here, hydrochloric acid etc. can be mentioned as an acid used in order to process the surface of a magnetic core particle.
As a method for coating the surface of the magnetic core particles with the highly conductive metal, an electroless plating method, a displacement plating method, or the like can be used, but the method is not limited to these methods.

The method of producing conductive particles by the electroless plating method or the displacement plating method will be described. First, a slurry is prepared by adding acid-treated and washed magnetic core particles to the plating solution, and the slurry is stirred. Then, electroless plating or displacement plating of the magnetic core particles is performed. Next, the particles in the slurry are separated from the plating solution, and then the particles are washed with pure water, for example, to obtain conductive particles in which the surface of the magnetic core particles is coated with a highly conductive metal.
In addition, after a base plating layer is formed on the surface of the magnetic core particles to form a base plating layer, a plating layer made of a highly conductive metal may be formed on the surface of the base plating layer. The method of forming the base plating layer and the plating layer formed on the surface thereof is not particularly limited, but the base plating layer is formed on the surface of the magnetic core particles by the electroless plating method, and then the base plating layer is formed by the displacement plating method. It is preferable to form a plating layer made of a highly conductive metal on the surface of the plating layer.
The plating solution used for electroless plating or displacement plating is not particularly limited, and various commercially available products can be used.

Also, when the surface of the magnetic core particles is coated with a highly conductive metal, the particles may agglomerate to generate conductive particles having a large particle diameter. It is preferable to carry out the treatment, which ensures that conductive particles having the intended particle size are obtained.
Examples of the classification device for performing the classification treatment of the conductive particles include those exemplified as the classification device used in the classification treatment for preparing the above-described magnetic core particles.

  The content ratio of the conductive particles P in the connecting conductive portion 24 is preferably 10 to 60%, preferably 15 to 50% in terms of volume fraction. When this ratio is less than 10%, the connection conductive portion 24 having a sufficiently small electric resistance value may not be obtained. On the other hand, if this ratio exceeds 60%, the obtained connecting conductive portion 24 is likely to be fragile, and the elasticity necessary for the connecting conductive portion 24 may not be obtained.

As the material constituting the contact member 27, various metal materials can be used. Specific examples thereof include nickel, cobalt, copper, gold, silver, palladium, rhodium, ruthenium, iridium, platinum, tungsten, chromium, or These alloys are mentioned.
The contact member 27 may be composed of two or more different metal layers. Even when the contact member 27 is formed of two or more different metal layers, each of the metal layers can be formed of the above metal or alloy.
Moreover, it is preferable that the thickness of the contact member 27 is 1-100 micrometers, More preferably, it is 5-40 micrometers. If this thickness is too small, the contact member 27 may not have sufficient strength. On the other hand, if this thickness is excessive, a large pressure may be required to compressively deform the connecting conductive portion 24 in the elastic anisotropic conductive film 23, which is not preferable.

In the present invention, the anisotropic conductive connector 20 is
A plurality of conductive elastomer material layers in which conductive particles exhibiting magnetism are contained in a liquid polymer substance-forming material that is cured to become an elastic polymer substance are provided on the frame plate 21 disposed on the support. Each of the openings 22 of the frame plate 21 is formed to be closed, and a metal mask showing magnetism is arranged on the surface of the conductive elastomer material layer according to a specific pattern corresponding to the pattern of the electrode to be inspected. In the state, a magnetic field is applied to the conductive elastomer material layer in the thickness direction, and each of the conductive elastomer material layers is cured to form a plurality of conductive elastomer layers. These conductive elastomer layers are laser-processed to remove the peripheral portion of the portion where the contact member is disposed, thereby being disposed on the support. A plurality of connecting conductive portions 24 arranged in accordance with the specific pattern are formed in each opening 22 of the frame plate 21, and are cured between the connecting conductive portions 24 on the support to be elastic polymer material and A step (a) of producing a first intermediate by forming a material layer for an insulating part made of a polymeric substance forming material,
On the metal film, a plurality of contact members 27 arranged according to a pattern corresponding to the connecting conductive portion 24 is formed, and a polymer material is formed between the contact members 27 to be cured and become an elastic polymer material. A step (b) of producing a second intermediate by forming an insulating material layer made of a material;
The first intermediate body and the second intermediate body are stacked on each of the connecting conductive portions 24 so that the contact members 27 corresponding thereto are in contact with each other, and in this state, the first intermediate body And the step (c) of forming the insulating part by curing the insulating part material layer of each of the second intermediates.
Hereinafter, a method for manufacturing the anisotropic conductive connector 20 will be specifically described.

<Production of frame plate>
A frame plate 21 in which an opening 22 is formed corresponding to an electrode region in which electrodes to be inspected in all integrated circuits formed on a wafer to be inspected is manufactured. Here, the method of forming the opening 22 of the frame plate 21 is appropriately selected according to the material constituting the frame plate 21, and for example, an etching method or the like can be used.

<< Step a >>
First, a metal mask composite having a plurality of metal masks arranged according to a specific pattern is manufactured.
Specifically, as shown in FIG. 4, a resist in which openings 28K are formed on a metal foil 28F according to a specific pattern corresponding to the pattern of an electrode to be inspected on a wafer to be inspected by a photolithography technique. Layer 28R is formed. Thereafter, the surface of the portion of the metal foil 28F exposed through the opening 28K of the resist layer 28R is plated with a metal exhibiting magnetism, whereby each of the openings 28K of the resist layer 28R is subjected to plating as shown in FIG. A metal mask 28M is formed. Thereby, the metal mask composite 28C in which the metal mask 28M is formed according to the specific pattern on the metal foil 28F is obtained.

In the above, copper, nickel, etc. can be used as a material constituting the metal foil 28F. The metal foil 28F may be laminated on a resin film.
The thickness of the metal foil 28F is preferably 0.05 to 2 μm, more preferably 0.1 to 1 μm. When this thickness is too small, a uniform thin layer is not formed, which may be inappropriate as a plating electrode. On the other hand, if this thickness is excessive, it may be difficult to remove by, for example, etching.
The thickness of the resist layer 28R is set according to the thickness of the metal mask 28M to be formed. As a material constituting the metal mask 28M, a material exhibiting magnetism is used in that the conductive particles can be unevenly distributed by the action of a magnetic field in the formation of a conductive elastomer layer to be described later. Examples thereof include nickel, cobalt, and alloys thereof.
The thickness of the metal mask 28M is preferably 1 to 100 μm, more preferably 5 to 40 μm.

Next, as shown in FIG. 6, for example, a frame plate 21 is disposed on the surface of a plate-like support 30, and a liquid polymer that is cured on the frame plate 21 and becomes an insulating elastic polymer material. A plurality of conductive elastomer material layers 24 </ b> A are formed so as to block each of the openings of the frame plate 21 by applying a conductive elastomer material in which conductive particles exhibiting magnetism are contained in the substance forming material. . Then, as shown in FIG. 7, the metal mask composite 28C is disposed on the conductive elastomer material layer 24A so that each of the metal masks 28M is in contact with the surface of the conductive elastomer material layer 24A. Thus, the metal mask 28M is arranged on the conductive elastomer material layer 24A in accordance with a specific pattern corresponding to the pattern of the electrode to be inspected on the wafer to be inspected. Here, in the conductive elastomer material layer 24A, the conductive particles P exhibiting magnetism are contained in a dispersed state.
Next, a magnetic field is applied to the conductive elastomer material layer 24A through the metal mask 28M in the thickness direction of the conductive elastomer material layer 24A. Thereby, since the metal mask 28M is formed of a metal exhibiting magnetism, a magnetic field having a stronger intensity than that of the other portions is formed in the portion where the metal mask 28M is disposed in the conductive elastomer material layer 24A. . As a result, as shown in FIG. 8, the conductive particles P dispersed in the conductive elastomer material layer 24A gather at the portion where the metal mask 28M is disposed, and further, the conductive elastomer material layer 24A. Are aligned in the thickness direction. Then, while continuing the action of the magnetic field on the conductive elastomer material layer 24A, or after stopping the action of the magnetic field, the conductive elastomer material layer 24A is subjected to curing treatment, as shown in FIG. A conductive elastomer layer 24 </ b> B that is contained in a polymer material in a state in which the conductive particles P are aligned in the thickness direction is formed on the support 30.

In the above, as a material which comprises the support body 30, a metal, ceramics, resin, these composite materials, etc. can be used.
As a method for applying the conductive elastomer material, a printing method such as screen printing, a roll coating method, a blade coating method, or the like can be used.
The thickness of the conductive elastomer material layer 24A is set according to the thickness of the connecting conductive portion 24 to be formed.
As means for applying a magnetic field to the conductive elastomer material layer 24A, an electromagnet, a permanent magnet, or the like can be used.
The strength of the magnetic field applied to the conductive elastomer material layer 24A is preferably 0.2 to 2.5 Tesla.
The curing process of the conductive elastomer material layer 24A is usually performed by a heating process. The specific heating temperature and heating time are appropriately set in consideration of the type of polymer substance forming material constituting the conductive elastomer material layer 24A, the time required to move the conductive particles, and the like.

Next, the metal foil 28F in the metal mask composite 28C disposed on the conductive elastomer layer 24B is removed by etching to remove the metal mask 28M and the resist layer 28R as shown in FIG. Expose. Then, by applying laser processing to the conductive elastomer layer 26B and the resist layer 28R, the peripheral portions of the portions where the metal mask 28M is disposed in the resist layer 28R and the conductive elastomer layer 24B are removed. As shown in FIG. 11, a plurality of connecting conductive portions 24 arranged according to a specific pattern are formed in a state of being supported on a support 30 in each opening 22 of the frame plate 21. Thereafter, the remaining resist layer 28R remaining on the remaining surfaces of the metal mask 28M and the anisotropic conductive elastomer layer 24B is removed.
Here, the laser processing is preferably performed by a carbon dioxide laser or an ultraviolet laser, whereby the connection conductive portion 24 having a desired form can be reliably formed.

  Then, an insulating material made of a polymer material forming material that is cured and becomes an elastic polymer material is supplied to the region of the support 30 where the conductive elastomer layer 24B is removed, that is, the region between the connecting conductive portions 24. Thus, as shown in FIG. 12, an insulating material layer 25 </ b> A is formed between the plurality of connection conductive portions 24 supported on the support 30, and thus a plurality of connections are formed on the support 30. The first intermediate body 20A in which the conductive portion 24 and the insulating portion material layer 25A are formed is manufactured.

<< Process b >>
First, as shown in FIG. 13, a resist layer 29R having openings 29K formed in accordance with a pattern corresponding to the pattern of the connecting conductive portion 24 to be formed is formed on the metal film 29F by a photolithography technique. Next, the surface of the portion of the metal film 29F exposed through the opening 29K of the resist layer 29R is plated with a metal exhibiting magnetism, so that each of the openings 29K of the resist layer 29R is formed as shown in FIG. A contact member 27 is formed. Thereafter, by removing the resist layer 29R from the metal foil 29F, as shown in FIG. 15, a contact member composite 27C in which the contact member 27 is formed according to the pattern corresponding to the specific pattern on the metal film 29F is obtained. It is done.
In the above, copper, nickel, or the like can be used as a material constituting the metal film 29F. The metal film 29F may be laminated on a resin film.
The thickness of the metal film 29F is preferably 0.05 to 2 μm, more preferably 0.1 to 1 μm. When this thickness is too small, a uniform thin layer is not formed, which may be inappropriate as a plating electrode. On the other hand, if this thickness is excessive, it may be difficult to remove by, for example, etching.
The thickness of the resist layer 29R is set according to the thickness of the contact member 27 to be formed.

  Then, by supplying a material for an insulating portion made of a polymer material forming material which is cured and becomes an elastic polymer material to a region other than the region where the contact member 27 is formed on the metal film 29F, as shown in FIG. As described above, the insulating part material layer 25B is formed between the plurality of contact members 27 formed on the metal film 29F, and thus the plurality of contact members 27 and the insulating part material layer 25B are formed on the metal film 29F. The formed second intermediate 20B is manufactured.

<< Process c >>
As shown in FIG. 17, the first intermediate 20A manufactured in the step a and the second intermediate 20B manufactured in the step b are connected to the conductive portion 24 for connection in the first intermediate 20A. Each of the contact members 27 in the second intermediate body 20B corresponding thereto is stacked so as to be in contact with each other, and further pressurized, thereby deforming each of the connecting conductive portions 24 into a compressed state in the thickness direction. Thereafter, in this state, each of the insulating material layer 25A in the first intermediate 20A and the insulating material layer 25B in the second intermediate 20B is subjected to curing treatment, as shown in FIG. An insulating portion 25 that insulates the connecting conductive portions 24 from each other is formed in a state of being integrally bonded to each of the connecting conductive portion 24 and the contact member 27, and thus the elastic anisotropic conductive film 23. Is formed.
Then, by removing the support 30 and the metal film 29F, each of the compressed connection conductive portions 24 is restored to the original form, and as a result, the contact members in the connection conductive portion 24, the contact member 27, and the insulating portion 25 are restored. Thus, the anisotropic conductive connector 20 having the configuration shown in FIGS. 1 to 3 is obtained.
In the above, the curing process of the insulating part material layer 25A and the insulating part material layer 25B is usually performed by heat treatment. The specific heating temperature and heating time are appropriately set in consideration of the type of polymer substance forming material constituting the insulating part material layer 25A and the insulating part material layer 25B.

According to the above manufacturing method, in the state where the metal mask 28M showing magnetism is arranged on the conductive elastomer material layer 24A according to the specific pattern corresponding to the pattern of the electrode to be inspected on the wafer to be inspected, By applying a magnetic field in the thickness direction of the conductive elastomer material layer 24A and curing the conductive elastomer material layer 24A, the conductive elastomer layer 24B obtained is conductive at the portion where the metal mask 28M is disposed. The particles P become dense and the conductive particles P in other parts become sparse. Therefore, by performing laser processing on the conductive elastomer layer 24B through the metal mask 28M, a portion where the metal mask 28M is not disposed in the conductive elastomer layer 24B can be easily removed. The conductive portion for connection can be reliably formed according to a specific pattern. And after forming the some conductive part 24 for a connection arrange | positioned according to a specific pattern, the insulating part 25 is formed by forming 25 A of insulating part material layers between these conductive parts 24 for a connection, and hardening-processing. Therefore, it is possible to reliably obtain the insulating portion 25 in which the conductive particles P are not present at all.
In addition, an insulating material layer 25 </ b> B is formed between the first intermediate body 20 </ b> A in which the insulating material layer 25 </ b> A is formed between the plurality of connecting conductive parts 24 and the contact members 27. In the anisotropic conductive connector 20 obtained by stacking the second intermediate 20B and curing the insulating material layers 25A and 25B, the contact member 27 is embedded in the insulating part 25. Fixed in state.
Therefore, according to the anisotropic conductive connector 20 obtained by such a method, even if the pitch of the electrodes to be inspected on the wafer to be inspected is extremely small, a good electrical connection state to the wafer can be ensured. In addition, the contact member 27 does not detach from the connecting conductive portion 24 at an early stage, and a long service life can be obtained.
In addition, since the contact member 27 is disposed on the connection conductive portion 24 in the elastic anisotropic conductive film 23, it is not necessary to use a sheet-like probe when inspecting the wafer. A probe card having a structure can be obtained, and a connection failure due to a positional deviation of the sheet-like probe can be avoided.

In addition, since each of the elastic anisotropic conductive films 23 is supported by the opening edge of the frame plate 21, it is difficult to be deformed and is easy to handle, and in electrical connection work with the wafer to be inspected, alignment with the wafer is performed. In addition, the holding and fixing can be easily performed.
In addition, even when the elastic anisotropic conductive film 23 having a small area has a thermal history, the absolute amount of thermal expansion in the surface direction of the elastic anisotropic conductive film 23 is small. The thermal expansion in is reliably regulated by the frame plate 21. In addition, since the thermal expansion of the anisotropic conductive connector 20 as a whole depends on the thermal expansion of the material constituting the frame plate 21, the temperature change can be achieved by using a material having a low thermal expansion coefficient as the material constituting the frame plate 21. Even when a thermal history is received, the displacement between the conductive portion for connection 24 in the anisotropic conductive connector 20 and the electrode to be inspected on the wafer is prevented, so that a good electrical connection state is stably maintained. The

FIG. 19 is a plan view showing the anisotropic conductive connector of the second example according to the present invention.
The anisotropic conductive connector 20 of the second example includes a rectangular plate-like frame plate 21 in which a plurality of openings 22 extending through the thickness direction are formed. The openings 22 of the frame plate 21 correspond to the pattern of the electrode region in which the electrodes to be inspected are formed in, for example, 32 (8 × 4) integrated circuits among the integrated circuits formed on the wafer to be inspected. Is formed. A plurality of elastic anisotropic conductive films 23 having conductivity in the thickness direction are arranged on the frame plate 21 so as to be supported by the opening edge portions of the frame plate 21 so as to block the one opening 22. . Other configurations of the anisotropic conductive connector 20 of the second example are the same as those of the anisotropic conductive connector 20 of the first example.
The anisotropic conductive connector 20 of the second example can be manufactured in the same manner as the anisotropic conductive connector 20 of the first example.
Then, according to the anisotropic conductive connector 20 of the second example, the same effect as the anisotropic conductive connector 20 of the first example can be obtained.

<Probe card for wafer inspection>
FIG. 20 is a cross-sectional view illustrating the configuration of a first example of a wafer inspection probe card (hereinafter simply referred to as “probe card”) according to the present invention, and FIG. 21 is a diagram illustrating the probe of the first example. It is sectional drawing for description which shows the structure of the principal part of a card | curd.
The probe card 10 of the first example is used for performing a burn-in test of each of the integrated circuits in a batch on a wafer on which a plurality of integrated circuits are formed. The circuit board 11 and the anisotropic conductive connector 20 of the first example shown in FIG. 1 are arranged on one surface (the upper surface in FIGS. 20 and 21) of the circuit board 11 for inspection.

As shown in FIG. 22, the inspection circuit board 11 has a disk-shaped first substrate element 12, and a central portion on the surface of the first substrate element 12 (upper surface in FIGS. 20 and 21). Are arranged in a regular octagonal plate-like second substrate element 15, and the second substrate element 15 is held by a holder 14 fixed to the surface of the first substrate element 12. In addition, a reinforcing member 17 is provided at the center of the back surface of the first substrate element 12.
A plurality of connection electrodes (not shown) are formed in an appropriate pattern at the center of the surface of the first substrate element 12. On the other hand, as shown in FIG. 23, a lead electrode portion in which a plurality of lead electrodes 13 are arranged along the circumferential direction of the first substrate element 12 at the peripheral edge portion on the back surface of the first substrate element 12. 13R is formed. The pattern of the lead electrode 13 is a pattern corresponding to an input / output terminal pattern of a controller in a wafer inspection apparatus described later. Each of the lead electrodes 13 is electrically connected to a connection electrode via an internal wiring (not shown).
On the surface of the second substrate element 15 (the upper surface in FIGS. 20 and 21), a plurality of inspection electrodes 16 correspond to the patterns of the electrodes to be inspected in all the integrated circuits formed on the wafer to be inspected. Inspection electrode portions 16R arranged in accordance with the pattern are formed. On the other hand, a plurality of terminal electrodes (not shown) are arranged on the back surface of the second substrate element 15 according to an appropriate pattern, and each of the terminal electrodes is connected to the inspection electrode 16 via an internal wiring (not shown). Electrically connected.
The connection electrode of the first substrate element 12 and the terminal electrode of the second substrate element 15 are electrically connected by appropriate means.

As the substrate material constituting the first substrate element 12 in the circuit board 11 for inspection, conventionally known various materials can be used. Specific examples thereof include glass fiber reinforced epoxy resin and glass fiber reinforced phenol. Examples thereof include composite resin substrate materials such as resin, glass fiber reinforced polyimide resin, and glass fiber reinforced bismaleimide triazine resin.
As a material constituting the second substrate element 15 in the circuit board 11 for inspection, a material having a linear thermal expansion coefficient of 3 × 10 ⁻⁵ / K or less is preferably used, and more preferably 1 × 10 ⁻⁷ to 1 × 10 ⁻⁵ / K, particularly preferably 1 × 10 ^{−6 to} 6 × 10 ⁻⁶ / K. Specific examples of such substrate materials include inorganic substrate materials made of Pyrex (registered trademark) glass, quartz glass, alumina, beryllia, silicon carbide, aluminum nitride, boron nitride, etc., iron such as 42 alloy, Kovar, and Invar. -The laminated board material etc. which laminated | stacked resin, such as an epoxy resin or a polyimide resin, using the metal plate which consists of nickel alloy steel as a core material are mentioned.

  The holder 14 has a regular octagonal opening 14 </ b> K that matches the outer shape of the second substrate element 15, and the second substrate element 15 is accommodated in the opening 14 </ b> K. The outer edge of the holder 14 is circular.

  According to the probe card 10 of the first example as described above, since the anisotropic conductive connector 20 shown in FIG. 1 is provided, the pitch of the electrodes to be inspected on the wafer to be inspected is very small and densely arranged. Even in such a case, the required electrical connection can be reliably achieved for each of the electrodes to be inspected, and even when a thermal history due to a temperature change is received, a good electrical connection state is obtained. Maintains stability. Therefore, it is possible to stably maintain a good electrical connection state to the wafer in the wafer burn-in test.

FIG. 24 is an explanatory cross-sectional view showing the configuration of the second example of the probe card according to the present invention, and FIG. 25 is an explanatory cross-sectional view showing the configuration of the main part of the probe card of the second example. .
The probe card 10 of the second example is used for performing a probe test of each integrated circuit in a wafer state on a wafer on which a plurality of integrated circuits are formed, for example. And the anisotropic conductive connector 20 of the second example shown in FIG. 19 arranged on one surface (the upper surface in FIGS. 24 and 25) of the circuit board 11 for inspection.
In the inspection circuit board 11 of the probe card 10 of the second example, as shown in FIG. 26, for example, 32 of the integrated circuits formed on the wafer to be inspected on the surface of the second substrate element 15. An inspection electrode portion 16R in which a plurality of inspection electrodes 16 are arranged according to a pattern corresponding to the pattern of the electrodes to be inspected in the eight (8 × 4) integrated circuits is formed. Other configurations of the inspection circuit board 11 are basically the same as those of the inspection circuit board 11 in the probe card 10 of the first example.

  According to the probe card 10 of the second example as described above, since the anisotropic conductive connector 20 shown in FIG. 19 is provided, the pitch of the electrodes to be inspected on the wafer to be inspected is very small and densely arranged. Even in such a case, the required electrical connection can be reliably achieved for each of the electrodes to be inspected, and even when a thermal history due to a temperature change is received, a good electrical connection state is obtained. Maintains stability. Therefore, it is possible to stably maintain a good electrical connection state to the wafer in the wafer probe test.

[Wafer inspection equipment]
FIG. 27 is an explanatory sectional view showing an outline of the configuration of the first example of the wafer inspection apparatus according to the present invention, and FIG. 28 is an enlarged view showing the main part of the wafer inspection apparatus of the first example. FIG. The first wafer inspection apparatus is for collectively performing a burn-in test of each integrated circuit in a wafer state for each of a plurality of integrated circuits formed on the wafer.
The wafer inspection apparatus of the first example detects the temperature of the wafer 6 to be inspected, power supply for inspecting the wafer 6, input / output control of signals, and output signals from the wafer 6 to detect the wafer 6 Has a controller 2 for determining whether the integrated circuit is good or bad. As shown in FIG. 29, the controller 2 has an input / output terminal portion 3R on the lower surface of which a large number of input / output terminals 3 are arranged along the circumferential direction.
Below the controller 2, the probe card 10 of the first example is held by appropriate holding means so that each lead electrode 13 of the circuit board 11 for inspection faces the input / output terminal 3 of the controller 2. It is arranged in the state.
A connector 4 is disposed between the input / output terminal portion 3R of the controller 2 and the lead electrode portion 13R of the inspection circuit board 11 in the probe card 10, and the connector 4 allows the lead electrode 13 of the inspection circuit board 11 to be connected. Each is electrically connected to each of the input / output terminals 3 of the controller 2. The connector 4 in the illustrated example includes a plurality of conductive pins 4A that can be elastically compressed in the length direction, and a support member 4B that supports these conductive pins 4A. They are arranged so as to be positioned between the output terminals 3 and the lead electrodes 13 formed on the first substrate element 12.
Below the probe card 10, a wafer mounting table 5 on which a wafer 6 to be inspected is mounted is provided.

  In such a wafer inspection apparatus, the wafer 6 to be inspected is placed on the wafer mounting table 5, and then the probe card 10 is pressed downward, whereby the contact point in the anisotropic conductive connector 20 is obtained. Each of the members 27 contacts each of the electrodes 7 to be inspected on the wafer 6, and each of the electrodes 7 to be inspected of the wafer 6 is pressurized by each of the contact members 27. In this state, each of the connecting conductive portions 24 in the elastic anisotropic conductive film 23 of the anisotropic conductive connector 20 is sandwiched between the test electrode 16 and the contact member 27 of the test circuit board 11 and is thus in the thickness direction. As a result, a conductive path is formed in the connecting conductive portion 24 in the thickness direction. As a result, the inspection electrode 7 of the wafer 6 and the inspection electrode 16 of the inspection circuit board 11 are connected to each other. An electrical connection is achieved. Thereafter, the wafer 6 is heated to a predetermined temperature via the wafer mounting table 5, and in this state, a required electrical inspection is performed on each of the plurality of integrated circuits on the wafer 6.

  According to such a wafer inspection apparatus of the first example, electrical connection to the inspection target electrode 7 of the wafer 6 to be inspected is achieved via the probe card 10 of the first example. A good electrical connection state can be reliably achieved, and a good electrical connection state to the wafer can be stably maintained. Therefore, in the wafer burn-in test, the required electrical inspection for the wafer is performed. Can be executed reliably.

FIG. 30 is a cross-sectional view for explaining the outline of the configuration of the second example of the wafer inspection apparatus according to the present invention. This wafer inspection apparatus is configured to integrate each of a plurality of integrated circuits formed on the wafer. This is for performing a probe test of a circuit in a wafer state.
The wafer inspection apparatus of the second example is basically the same as the wafer inspection apparatus of the first example except that the probe card 10 of the second example is used instead of the probe card 10 of the first example. It is the composition.
In the wafer inspection apparatus of the second example, the probe card 10 is electrically connected to the inspected electrodes 7 of, for example, 32 integrated circuits selected from all the integrated circuits formed on the wafer 6. After that, the process of conducting the inspection by electrically connecting the probe card 10 to the electrodes 7 to be inspected of the plurality of integrated circuits selected from the other integrated circuits is repeated on the wafer 6. All the integrated circuits formed are probed.
According to the wafer inspection apparatus of the second example as described above, the electrical connection to the inspection target electrode 7 of the wafer 6 to be inspected is achieved via the probe card 10 of the second example. A good electrical connection state can be reliably achieved, and a good electrical connection state to the wafer can be stably maintained. Therefore, in the wafer probe test, the required electrical inspection for the wafer can be performed. Can be executed reliably.

The present invention is not limited to the above embodiment, and various modifications can be made as follows.
(1) In the anisotropic conductive connector 20, it is not essential that the contact member 27 and the peripheral portion of the contact member 27 in the insulating portion 25 protrude from the surface. The entire surface including the contact member 27 is not necessarily required. May be flat.
(2) The elastic anisotropic conductive film 23 in the anisotropic conductive connector 20 is not electrically connected to the electrode to be inspected in addition to the connection conductive portion 24 formed according to the pattern corresponding to the pattern of the electrode to be inspected. A conductive portion for non-connection may be formed.
(3) The connector 4 for electrically connecting the controller 2 and the inspection circuit board 11 in the wafer inspection apparatus is not limited to the one shown in FIG. 29, and various structures can be used.

(4) In step (a) in the method of manufacturing the anisotropic conductive connector 20, the ferromagnetic portion is used as a support for forming the connecting conductive portion according to the pattern corresponding to the pattern of the connecting conductive portion 24 to be formed. Can be used. A configuration of an example of such a support is shown in FIG. The support 31 has a metal film 32 that forms the surface on which the conductive elastomer material layer is formed. On the back surface of the metal film 32, a pattern corresponding to the pattern of the connecting conductive portion 24 to be formed. Accordingly, the ferromagnetic portion 33 is disposed, and the non-magnetic portion 34 is disposed in the other region.
As a material constituting the metal film 32, nickel, gold, copper, or the like can be used.
As a material constituting the ferromagnetic portion 33, nickel, cobalt, or an alloy thereof can be used.
A photoresist can be used as a material constituting the nonmagnetic portion 34.
As shown in FIG. 32, such a support 31 is formed by forming a non-magnetic part 34 having an opening 34 </ b> K on a metal film 32 according to the pattern of the ferromagnetic part 33 to be formed using a photoresist, Thereafter, the surface of the portion exposed through the opening 34K of the nonmagnetic portion 34 in the metal film 32 can be manufactured by plating.

In such a support 31, the connection conductive portion 24 is formed as follows. First, as shown in FIG. 33, the frame plate 21 is disposed on the surface of the metal film 32 in the support 31, and a conductive elastomer material is applied to the framee plate 21, thereby opening 22 of the frame plate 21. A conductive elastomer material layer 24A is formed so as to close the metal mask, and a metal mask composite 28C is disposed on the conductive elastomer material layer 24A so that each of the metal masks 28M is in contact with the conductive elastomer material layer 24A. Next, a magnetic field is applied to the conductive elastomer material layer 24A via the metal mask 28M and the ferromagnetic portion 33 of the support 31 in the thickness direction of the conductive elastomer material layer 24A. In the elastomer material layer 24 </ b> A, a magnetic field having a higher strength than that of the other portion is formed in a portion located between the metal mask 28 </ b> M and the ferromagnetic portion 33 of the support 31. As a result, the conductive particles P dispersed in the conductive elastomer material layer 24A are formed in a portion located between the metal mask 28M and the ferromagnetic portion 33 of the support 31, as shown in FIG. They are assembled and further oriented so as to be aligned in the thickness direction of the conductive elastomer material layer 24A. Then, while continuing the action of the magnetic field on the conductive elastomer material layer 24A, or after stopping the action of the magnetic field, the conductive elastomer material layer 24A is cured, as shown in FIG. A conductive elastomer layer 24 </ b> B is formed in a state where the conductive particles P are contained in the polymer material in an aligned state in the thickness direction so as to be supported on the support 31.
Thereafter, the metal foil 28F in the metal mask composite 28C disposed on the conductive elastomer layer 24B is removed by etching, thereby removing the metal mask 28M and the resist layer 28R as shown in FIG. Expose. Then, by applying laser processing to the conductive elastomer layer 24B and the resist layer 28R, the peripheral portions of the portions where the metal mask 28M is disposed in the resist layer 28R and the conductive elastomer layer 24B are removed. As shown in 37, a plurality of connecting conductive portions 24 arranged according to a specific pattern are formed on a support 31 in a supported state.

  According to such a method using the support 31, a magnetic field having a higher strength can be applied to the portion where the metal mask 28 </ b> M is disposed on the conductive elastomer material layer 24 </ b> A than the other portions. In the obtained conductive elastomer layer 24B, the conductive particles P in the portion where the metal mask 28M is disposed become denser, and the conductive particles P in the other portions become more sparse. Therefore, even if the thickness of the conductive elastomer layer 24 is considerably large, it is possible to form the connection conductive portion 24 in the desired form by laser processing the conductive elastomer layer 24B.

It is a top view which shows the anisotropic conductive connector for wafer inspection of the 1st example which concerns on this invention. It is a top view which expands and shows a part of anisotropic conductive connector for wafer inspection of the 1st example. It is sectional drawing for description which expands and shows a part of anisotropic conductive connector for wafer inspection of the 1st example. It is sectional drawing for description which shows the state in which the resist layer which has the some opening formed according to the specific pattern on the metal foil was formed. It is sectional drawing for description which shows the state in which the metal mask was formed in each opening of a resist layer, and the metal mask composite_body | complex was formed. It is sectional drawing for description which shows the state by which the frame board was arrange | positioned on the support body and the conductive elastomer material layer was formed. It is sectional drawing for description which shows the state by which the metal mask composite body has been arrange | positioned on the surface of the material layer for conductive elastomers. It is sectional drawing for description which shows the state by which the magnetic field was acted on the thickness direction of the conductive elastomer material layer. It is sectional drawing for description which shows the state in which the conductive elastomer layer was formed on the support body. It is sectional drawing for description which shows the state from which the metal foil of the metal mask composite was removed. It is sectional drawing for description which shows the state by which the several electroconductive part for a connection was formed according to the specific pattern on the support body. It is sectional drawing for description which shows the structure of a 1st intermediate body. It is sectional drawing for description which shows the state in which the resist layer which has the some opening formed according to the specific pattern on the metal film was formed. It is sectional drawing for description which shows the state in which the contact member was formed in each opening of a resist layer. It is sectional drawing for description which shows the structure of a contact member composite_body | complex. It is sectional drawing for description which shows the structure of a 2nd intermediate body. It is sectional drawing for description which shows the state in which the 1st intermediate body and the 2nd intermediate body were piled up. It is sectional drawing for description which shows the state in which the insulating part was formed between the adjacent conductive parts for a connection. It is a top view which shows the anisotropic conductive connector for wafer inspection of the 2nd example which concerns on this invention. It is sectional drawing for description which shows the structure of the 1st example of the probe card based on this invention. It is sectional drawing for description which expands and shows the structure of the principal part of the probe card of a 1st example. It is a top view which shows the circuit board for a test | inspection in the probe card of a 1st example. It is explanatory drawing which expands and shows the lead electrode part in the circuit board for a test | inspection. It is sectional drawing for description which shows the structure of the 2nd example of the probe card based on this invention. It is sectional drawing for description which expands and shows the structure of the principal part of the probe card of a 2nd example. It is a top view which shows the circuit board for a test | inspection in the probe card of a 2nd example. It is sectional drawing for description which shows the structure of the 1st example of the wafer inspection apparatus which concerns on this invention. It is sectional drawing for description which expands and shows the structure of the principal part of the wafer inspection apparatus of a 1st example. It is sectional drawing for description which expands and shows the connector in the wafer inspection apparatus of the 1st example. It is sectional drawing for description which shows the structure of the 2nd example of the wafer inspection apparatus which concerns on this invention. It is sectional drawing for description which shows the structure in the other example of a support body. It is sectional drawing for description which shows the state by which the non-magnetic-material part was formed on the metal film. It is sectional drawing for description which shows the state by which the metal mask composite body has been arrange | positioned on the surface of the material layer for conductive elastomers formed on the support body shown in FIG. It is sectional drawing for description which shows the state by which the magnetic field was acted on the thickness direction of the conductive elastomer material layer. It is sectional drawing for description which shows the state by which the conductive elastomer layer was formed on the support body shown in FIG. It is sectional drawing for description which shows the state from which the metal foil of the metal mask composite was removed. FIG. 32 is an explanatory sectional view showing a state in which a plurality of conductive path forming portions are formed according to a specific pattern on the support shown in FIG. 31. It is sectional drawing for description which shows the structure of the metal mold | die for manufacturing the conventional anisotropically conductive connector. In the process of manufacturing the conventional anisotropically conductive connector, it is sectional drawing for description which shows the state by which the frame board was arrange | positioned in a metal mold | die and the molding material layer was formed. It is sectional drawing for description which shows the state by which the magnetic field was acted on the thickness direction of the molding material layer. It is sectional drawing for description which shows the direction of the magnetic field acted on a molding material layer in the manufacturing method of the conventional anisotropically conductive connector.

Explanation of symbols

2 Controller 3 Input / output terminal 3R Input / output terminal section 4 Connector 4A Conductive pin 4B Support member 5 Wafer mounting table 6 Wafer 7 Electrode 10 Probe card 11 Inspection circuit board 12 First substrate element 13 Lead electrode 13R Lead electrode section 14 holder 14K opening 15 second substrate element 16 inspection electrode 16R inspection electrode portion 17 reinforcing member 20 anisotropic conductive connector 20A first intermediate body 20B second intermediate body 21 frame plate 22 opening 23 elastic anisotropic conduction Membrane 24 Connecting conductive portion 24A Conductive elastomer material layer 24B Conductive elastomer layer 25 Insulating portions 25A, 25B Insulating portion material layer 27 Contact member 27C Contact member composite 28C Metal mask composite 28F Metal foil 28M Metal mask 28R Resist layer
28K opening 29F metal film 29R resist layer 29K opening 30, 31 support 32 metal film 33 ferromagnetic portion 34 nonmagnetic portion 34K opening 80 upper mold 81 substrate 82, 82a, 82b ferromagnetic layer 83 nonmagnetic layer 85 Lower mold 86 Substrate 87 87a, 87b Ferromagnetic layer 88 Nonmagnetic layer 90 Frame plate 91 Opening 95 Elastic anisotropic conductive film 95A Molding material layer 96 Conductive part 97 Insulating part P Conductive particle

Claims (5)

A frame plate in which a plurality of openings are formed corresponding to electrode regions in which electrodes to be inspected are arranged in all or part of integrated circuits formed on a wafer to be inspected, and the electrodes to be inspected in the electrode regions A plurality of connecting conductive portions each including conductive particles exhibiting magnetism in an elastic polymer material arranged according to a pattern corresponding to the pattern, and an insulating portion made of an elastic polymer material that insulates them from each other A plurality of elastic anisotropic conductive films arranged and supported by the frame plate so as to close the openings, and a plurality of contact members made of metal arranged on each connection conductive portion in these elastic anisotropic conductive films A method of manufacturing an anisotropic conductive connector for wafer inspection comprising:
A plurality of conductive elastomer material layers in which conductive particles exhibiting magnetism are contained in a liquid polymer substance forming material that is cured to become an elastic polymer substance are provided on a frame plate disposed on a support. Each of the openings of the frame plate is formed to be closed, and a metal mask showing magnetism is arranged on the surface of the conductive elastomer material layer according to a specific pattern corresponding to the pattern of the electrode to be inspected. A magnetic field is applied to the conductive elastomer material layer in the thickness direction, and each of the conductive elastomer material layers is cured to form a plurality of conductive elastomer layers. A frame disposed on the support by removing a peripheral portion of the portion where the metal mask is disposed by laser processing the functional elastomer layer Forming a plurality of connecting conductive portions arranged in the respective openings according to the specific pattern, and being cured between the connecting conductive portions on the support to become an elastic polymer material Forming a first intermediate by forming an insulating material layer comprising:
A plurality of contact members arranged according to a pattern corresponding to the conductive portion for connection are formed on the metal film, and a polymer material forming material that is cured and becomes an elastic polymer material between the contact members. Forming a second intermediate by forming an insulating material layer;
The first intermediate body and the second intermediate body are stacked so that each of the contact members corresponding to each of the connecting conductive portions is in contact with each other, and in this state, the first intermediate body and the second intermediate body A method of manufacturing an anisotropic conductive connector for wafer inspection, comprising: forming an insulating portion by curing a material layer for each insulating portion of the intermediate of 2.   2. The method for producing an anisotropic conductive connector for wafer inspection according to claim 1, wherein the laser processing is performed by a carbon dioxide laser or an ultraviolet laser.   An anisotropic conductive connector for wafer inspection, which is obtained by the manufacturing method according to claim 1.   An inspection circuit board having a plurality of inspection electrodes formed on the surface according to a pattern corresponding to the pattern of the electrodes to be inspected in all or some of the integrated circuits formed on the wafer to be inspected, and the inspection circuit board A wafer inspection probe card comprising the anisotropic conductive connector for wafer inspection according to claim 3, which is disposed on the surface of the wafer inspection device. A wafer inspection apparatus that performs electrical inspection of a plurality of integrated circuits formed on a wafer in a wafer state,
A wafer inspection apparatus comprising the probe card for wafer inspection according to claim 4.

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