JP2007093237A - Wafer inspecting probe card, wafer inspection device, and wafer inspection method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a wafer inspecting probe card capable of attaining surely required electric connection even in a wafer having a large number of inspected electrodes with a wide area and a small size, capable of measuring surely resistance highly precisely, and manufactured at a low cost; and also to provide an wafer inspection device and a method using the same. <P>SOLUTION: This wafer inspecting probe card has the first electrode sheet, the first anisotropic conductive sheet arranged on a surface thereof, the second anisotropic conductive sheet arranged on a reverse face of the first electrode sheet and formed with a through hole corresponding to an inspected electrode, and the second electrode sheet arranged on a reverse face thereof. The first electrode sheet has a flexible insulating sheet formed with a through hole corresponding to the each inspected electrode, a plurality of ringlike electrodes formed to surround the through hole on a surface of the insulating sheet, and relay electrodes formed on a reverse face of the insulating sheet. The second electrode sheet has a plurality of inspecting core electrodes arranged corresponding to the inspected electrodes, and a plurality of connecting core electrodes arranged corresponding to the relay electrodes. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a wafer inspection probe card used for measuring the electrical resistance of each circuit in a plurality of integrated circuits formed on a wafer in a wafer state, a wafer inspection apparatus using the wafer inspection probe card, and a wafer. It relates to the inspection method.

In recent years, with the demand for high-speed signal transmission in electronic components and electronic devices incorporating them, integrated circuit devices such as BGAs and CSPs are required to have low electrical resistance in each circuit. Therefore, in the electrical inspection of the semiconductor integrated circuit device, it is extremely important to measure the electrical resistance of each circuit with high accuracy.
Thus, in the manufacturing process of the integrated circuit device (semiconductor chip) used in the flip chip mounting method, a protruding electrode (solder ball) made of solder is formed in the state of a wafer, and then the wafer is applied to the wafer. Dicing is performed. Therefore, if the measurement of the electrical resistance of each circuit in the integrated circuit device can be performed in a wafer state, the inspection efficiency can be improved.

Conventionally, in the measurement of electric resistance of a circuit, for example, as shown in FIG. 49, current supply probes PA and PD are respectively supplied to two inspected electrodes 91 and 92 which are terminals of a circuit in an inspection object 90. Then, the voltage measurement probes PB and PC are pressed and brought into contact with each other. In this state, current is supplied from the power supply device 93 between the current supply probes PA and PD, and at this time, the voltage measurement probes PB and PC detect the voltage measurement probes PB and PC. A four-terminal method is employed in which the electric signal processing device 94 processes the voltage signal to be obtained, thereby obtaining the magnitude of the electric resistance of the circuit between the electrodes 91 and 92 to be inspected.
However, in the above method, it is necessary to bring the current supply probes PA and PD and the voltage measurement probes PB and PC into contact with the electrodes 91 and 92 to be inspected with a considerably large pressing force. Is made of metal and has a pointed tip, so that when the probe is pressed, the surfaces of the electrodes 91 and 92 to be inspected are damaged, and the inspection object cannot be used. It will become something. Under such circumstances, electrical resistance cannot be measured for all inspection objects that are products, and so it must be a so-called sampling inspection, so that the yield of products cannot be increased after all. .

In order to solve such a problem, conventionally, an electrical resistance measuring device in which a connecting member that contacts an electrode to be inspected is made of a conductive elastomer has been proposed.
For example, (i) Patent Document 1 discloses an electrical resistance measurement in which an elastic connection member made of conductive rubber, in which conductive particles are bound by an elastomer, is arranged separately for a current supply electrode and a voltage measurement electrode. An apparatus is disclosed, and (ii) Patent Document 2 discloses anisotropic conductivity provided so as to be in contact with both surfaces of a current supply electrode and a voltage measurement electrode that are electrically connected to the same electrode to be inspected. An electrical resistance measuring device having a common elastic connecting member made of an elastomer is disclosed. (Iii) Patent Document 3 discloses an inspection circuit board having a plurality of inspection electrodes formed on the surface thereof, and a circuit board for the inspection circuit board. An elastic connection member made of a conductive elastomer provided on the surface, and two of the test electrodes in a state where the electrode to be tested is electrically connected to the plurality of test electrodes through the connection member Select One was the current supply electrodes, the electrical resistance measuring device for measuring the electrical resistance is disclosed and the other as an electrode for voltage measurement.
According to such an electrical resistance measurement device, electrical connection is achieved by contacting the current supply electrode and the voltage measurement electrode to the electrode to be inspected via the elastic connection member. The electrical resistance can be measured without damaging the electrode to be inspected.

However, when measuring the electrical resistance between the electrodes by the electrical resistance measuring device having the configuration of (i) and (ii), there are the following problems.
In recent years, in integrated circuits, the size and pitch of electrodes or the distance between electrodes tend to be small in order to obtain a high degree of integration. Thus, in the electrical resistance measurement device having the configuration of (i) and (ii), both the current supply electrode and the voltage measurement electrode are simultaneously electrically connected to each of the electrodes to be inspected via the elastic connection member. Need to be connected. Therefore, in an electrical resistance measurement apparatus for measuring electrical resistance of an inspection object in which small-sized electrodes to be inspected are arranged at high density, the corresponding electrodes are respectively corresponding to the small-sized electrodes to be inspected. Forming a current supply electrode and a voltage measurement electrode in a state of being separated from each other in a region having an area equal to or smaller than the region occupied by the inspection electrode, that is, for supplying a current having a size smaller than that of the electrode to be inspected It is necessary to form the electrode and the voltage measurement electrode in a state of being separated by a very small distance. Further, when performing electrical resistance measurement, each of the electrodes to be inspected is provided with a current supply electrode and a voltage measurement electrode. It is necessary to electrically connect both of them simultaneously.

However, when the object to be inspected is a wafer, the area thereof is considerably large and the number of electrodes to be inspected is extremely large, so that each of the electrodes to be inspected has a current supply electrode and a voltage measuring electrode. It is extremely difficult to electrically connect both electrodes simultaneously.
To explain with a specific example, as shown in FIG. 50, when measuring the electrical resistance of the electrode T to be inspected having a diameter L of 100 μm, the current electrically connected to the electrode T to be inspected The separation distance D between the supply electrode A and the voltage measurement electrode V is about 50 μm. However, as shown in FIGS. 51A and 51B, in the wafer alignment, the current supply electrode A and the voltage measurement electrode V are used. When the position of the electrode T to be inspected with respect to the electrode V deviates from the intended position shown in FIG. 50 by 25 μm in the direction in which the current supply electrode A and the voltage measurement electrode V are arranged, the current supply electrode A and the voltage measurement electrode Electrical connection between any one of V and the electrode T to be inspected is not achieved, and required electrical resistance measurement cannot be performed.
As a means for solving such a problem, it is conceivable to reduce the distance D between the current supply electrode A and the voltage measurement electrode V. However, it is actually extremely difficult to produce such an electrical resistance measurement device. Have difficulty.

On the other hand, according to the electrical resistance measuring apparatus of (iii) above, it is not necessary to form a current supply electrode and a voltage measurement electrode corresponding to each of the electrodes to be inspected. Even if the inspection object is a wafer having a large area, a large number of electrodes to be inspected, and a small size of the electrodes to be inspected arranged at a high density, such as a wafer, The tolerance for misalignment is large, and the electrical resistance measuring device can be easily manufactured.
However, since such an electrical resistance measuring device is a measuring device based on the pseudo four-terminal method, it has a large measurement error range. Therefore, for an inspection object having a low electrical resistance between the electrodes, the electrical resistance It is difficult to measure with high accuracy.

In order to solve such a problem, an electrical resistance measurement connector in which a plurality of connection electrode pairs including a core electrode and a ring electrode provided so as to surround the core electrode is formed on the surface of the insulating substrate. It has been proposed (see Patent Document 4).
According to such an electrical resistance measurement connector, when alignment is performed so that at least a part of the core electrode is positioned on the electrode to be inspected, at least a part of the ring-shaped electrode is on the electrode to be inspected. Become positioned. Therefore, even if the inspection object has a large number of inspection electrodes having a large area and a small size, electrical connection of both the core electrode and the ring electrode to the inspection electrode can be reliably achieved. By using one of the electrode and the ring electrode as a current supply electrode and using the other as a voltage measurement electrode, it is possible to reliably measure the electrical resistance with high accuracy.
However, the electrical resistance measuring connector has a problem that the whole structure is complicated and it is difficult to manufacture the connector with a high yield.

JP-A-9-26446 JP 2000-74965 A JP 2000-241485 A JP 2003-322665 A

The present invention has been made on the basis of the circumstances as described above, and the first object thereof is that a wafer whose electrical resistance is to be measured has a large area and a large number of small electrodes to be inspected. Even so, the required electrical connection to the wafer can be reliably achieved, and the intended electrical resistance measurement can be reliably performed with high accuracy, and manufacturing can be performed at a low cost. It is an object of the present invention to provide a probe card for wafer inspection that can be used.
A second object of the present invention is to provide a wafer inspection apparatus and a wafer inspection method using the above wafer inspection probe card.

The wafer inspection probe card of the present invention is a wafer inspection probe card used for measuring the electrical resistance of each circuit in all or some integrated circuits formed on a wafer to be inspected in the state of the wafer. There,
Comprising an inspection circuit board and an electrical resistance measurement connector disposed on the surface of the inspection circuit board;
The electrical resistance measurement connector is disposed on the first electrode sheet, the first anisotropic conductive elastomer sheet disposed on the surface of the first electrode sheet, and the back surface of the first electrode sheet. A second anisotropic conductive elastomer sheet, and a second electrode sheet disposed on the back surface of the second anisotropic conductive elastomer sheet,
The first electrode sheet includes a flexible insulating sheet having a plurality of through holes formed according to a pattern corresponding to the pattern of the electrode to be inspected, and a through hole of the insulating sheet on the surface of the insulating sheet. A plurality of ring-shaped electrodes formed so as to surround, and a relay electrode formed on the back surface of the insulating sheet and electrically connected to the ring-shaped electrode;
The second anisotropic conductive elastomer sheet has a plurality of through holes formed according to a pattern corresponding to the pattern of the electrode to be inspected,
The second electrode sheet corresponds to a support sheet having an opening, an elastic anisotropic conductive film formed so as to close the opening of the support sheet, and a pattern of the electrode to be inspected on the surface of the elastic anisotropic conductive film A plurality of inspection core electrodes arranged according to the pattern to be connected, and a plurality of connection core electrodes arranged according to a pattern corresponding to the pattern of the relay electrode in the first electrode sheet on the surface of the elastic anisotropic conductive film. Have
The elastic anisotropic conductive film is arranged according to a pattern corresponding to the pattern of the inspection core electrode and the connection core electrode, and is oriented so that conductive particles exhibiting magnetism are arranged in the thickness direction in the elastic polymer material. A plurality of conductive path forming parts contained in a state, and an insulating part made of an elastic polymer material that insulates these conductive path forming parts from each other, and is formed on each surface of the conductive path forming part. The inspection core electrode or the connection core electrode is disposed,
The inspection core electrode enters the through hole of the second anisotropic conductive elastomer sheet and the through hole of the insulating sheet in the first electrode sheet, and passes through the first anisotropic conductive elastomer sheet. And electrically connected to the electrode to be inspected.

In the probe card for wafer inspection of the present invention, the second electrode sheet is
By laser processing a conductive elastomer layer containing magnetically conductive particles formed so as to close the opening of the support sheet so as to be aligned in the thickness direction, a plurality of particles are formed in the opening of the support sheet. By forming conductive path forming portions and forming an insulating portion material layer made of a polymer material forming material which is cured and becomes an elastic polymer substance between the conductive path forming portions, the inside of the opening of the support sheet is formed. A step of manufacturing a first intermediate formed with a plurality of conductive path forming portions and insulating portion material layers;
Forming a plurality of inspection core electrodes and a plurality of connection core electrodes on a metal film, and forming a polymer material that is cured between the inspection core electrodes and the connection core electrodes to become an elastic polymer material By forming the insulating part material layer made of a material, a second intermediate body in which a plurality of inspection core electrodes, a plurality of connecting core electrodes, and an insulating part material layer are formed on the metal film is manufactured. Process,
The second intermediate body is stacked on the first intermediate body so that each of the inspection core electrode and the connection core electrode corresponding to each of the conductive path forming portions is in contact with each other. It is preferable to obtain the insulating part material layer of each of the first intermediate body and the second intermediate body through a curing process to form an insulating part.

The wafer inspection apparatus of the present invention comprises the above-described wafer inspection probe card,
A state in which measurement is possible by simultaneously electrically connecting the ring-shaped electrode of the first electrode sheet and the core electrode for inspection of the second electrode sheet in the electrical resistance measurement connector to each of the electrodes to be inspected on the wafer to be inspected And
In this measurable state, one of the inspection core electrode and the ring electrode electrically connected to one designated inspection electrode is used as a current supply electrode, and the other is used as a voltage measurement electrode. Thus, the measurement of the electrical resistance relating to the designated one electrode to be inspected is performed.

In the wafer inspection method of the present invention, the above-described probe card for wafer inspection is arranged on the surface of the wafer to be inspected,
The ring-shaped electrode of the first electrode sheet and the core electrode for inspection of the second electrode sheet in the electrical resistance measurement connector of the wafer inspection probe card are simultaneously electrically connected to each of the electrodes to be inspected of the wafer. To enable measurement,
In this measurable state, one of the inspection core electrode and the ring electrode electrically connected to one designated inspection electrode is used as a current supply electrode, and the other is used as a voltage measurement electrode. Thus, the measurement of the electrical resistance related to the designated one electrode to be inspected is performed.

According to the wafer inspection probe card having the above-described configuration, the insulating sheet of the first electrode sheet in the electrical resistance measurement connector is formed with a through hole into which the inspection core electrode of the second electrode sheet enters, Since a ring-shaped electrode is formed around the through hole so as to surround the through hole, at least a part of the core electrode for inspection is positioned on the electrode to be inspected on the wafer to be inspected. When the alignment is performed, at least a part of the ring-shaped electrode is positioned on the electrode to be inspected. Therefore, the wafer to be inspected has a large number of electrodes to be inspected having a large area and a small size. Even so, electrical connection of both the inspection core electrode and the ring electrode to the electrode to be inspected can be reliably achieved. Moreover, since the inspection core electrode and the ring-shaped electrode are electrically independent from each other, one of the inspection core electrode and the ring-shaped electrode electrically connected to the electrode to be inspected is used as a current supply electrode. By using the other as the voltage measuring electrode, the electrical resistance of the wafer can be measured with high accuracy.
In addition, since the first electrode sheet and the second electrode sheet have simple structures, it is possible to manufacture the entire electrical resistance measurement connector at a low cost. Therefore, the inspection cost can be reduced in the wafer inspection.

Hereinafter, embodiments of the present invention will be described in detail.
<Probe card for wafer inspection>
FIG. 1 is a cross-sectional view for explaining the structure of an example of a probe card for wafer inspection (hereinafter simply referred to as “probe card”) according to the present invention, and FIG. 2 is a main portion of the probe card shown in FIG. It is sectional drawing for description which shows this structure.
This probe card 10 is used, for example, to collectively measure the electrical resistance of each circuit in the state of the wafer for all integrated circuits formed on the wafer. The electrical resistance measuring connector 20 is disposed on one surface (the upper surface in FIG. 1) of the circuit board 11 for inspection.

As shown in FIG. 3, the inspection circuit board 11 has a disk-shaped first substrate element 12, and a central portion on the surface (upper surface in FIGS. 1 and 2) of the first substrate element 12. Are arranged in a regular octagonal plate-like second substrate element 15, and the second substrate element 15 is held by a holder 14 fixed to the surface of the first substrate element 12. In addition, a reinforcing member 17 is provided at the center of the back surface of the first substrate element 12.
A plurality of connection electrodes (not shown) are formed in an appropriate pattern at the center of the surface of the first substrate element 12. On the other hand, as shown in FIG. 4, a lead electrode portion in which a plurality of lead electrodes 13 are arranged along the circumferential direction of the first substrate element 12 at the peripheral portion on the back surface of the first substrate element 12. 13R is formed. The pattern of the lead electrode 13 is a pattern corresponding to an input / output terminal pattern of a controller in a wafer inspection apparatus described later. Each of the lead electrodes 13 is electrically connected to a connection electrode via an internal wiring (not shown).
On the surface of the second substrate element 15 (upper surface in FIGS. 1 and 2), a plurality of inspection electrodes 16 have patterns of inspection core electrodes 45 and connection core electrodes 46 in a second electrode sheet 40 described later. The inspection electrode portion 16R is formed in accordance with the pattern corresponding to. On the other hand, a plurality of terminal electrodes (not shown) are arranged on the back surface of the second substrate element 15 according to an appropriate pattern, and each of the terminal electrodes is connected to the inspection electrode 16 via an internal wiring (not shown). Electrically connected.
The connection electrode of the first substrate element 12 and the terminal electrode of the second substrate element 15 are electrically connected by appropriate means.

As the substrate material constituting the first substrate element 12 in the circuit board 11 for inspection, conventionally known various materials can be used. Specific examples thereof include glass fiber reinforced epoxy resin and glass fiber reinforced phenol. Examples thereof include composite resin substrate materials such as resin, glass fiber reinforced polyimide resin, and glass fiber reinforced bismaleimide triazine resin.
As a material constituting the second substrate element 15 in the circuit board 11 for inspection, a material having a linear thermal expansion coefficient of 3 × 10 ⁻⁵ / K or less is preferably used, and more preferably 1 × 10 ⁻⁷ to 1 × 10 ⁻⁵ / K, particularly preferably 1 × 10 ^{−6 to} 6 × 10 ⁻⁶ / K. Specific examples of such substrate materials include inorganic substrate materials made of Pyrex (registered trademark) glass, quartz glass, alumina, beryllia, silicon carbide, aluminum nitride, boron nitride, etc., iron such as 42 alloy, Kovar, and Invar. -The laminated board material etc. which laminated | stacked resin, such as an epoxy resin or a polyimide resin, using the metal plate which consists of nickel alloy steel as a core material are mentioned.

  The holder 14 has a regular octagonal opening 14 </ b> K that matches the outer shape of the second substrate element 15, and the second substrate element 15 is accommodated in the opening 14 </ b> K. The outer edge of the holder 14 is circular.

  The electrical resistance measurement connector 20 includes a first electrode sheet 30, a first anisotropic conductive elastomer sheet 37 disposed on the surface of the first electrode sheet 30, and a back surface of the first electrode sheet 30. The second anisotropic conductive elastomer sheet 38 is disposed, and the second electrode sheet 40 is disposed on the back surface of the second anisotropic conductive elastomer sheet 38.

  FIG. 5 is an enlarged plan view showing the main part of the first electrode sheet 30, and FIG. 6 is an explanatory sectional view showing the main part of the first electrode sheet 30 in an enlarged manner. The first electrode sheet 30 has a flexible insulating sheet 31 in which a plurality of through holes 32 are formed in accordance with a pattern corresponding to the pattern of electrodes to be inspected in all integrated circuits formed on a wafer to be inspected. . A plurality of ring-shaped electrodes 33 are formed on the surface of the insulating sheet 31 so as to surround each of the through holes 32 of the insulating sheet 31. A plurality of relay electrodes 34 are formed on the back surface of the insulating sheet 31 according to an appropriate pattern. In the illustrated example, each of the relay electrodes 34 is disposed so as to be positioned between the through holes 32 of the insulating sheet 31. Each relay electrode 34 is electrically connected to the ring-shaped electrode 33 through a short-circuit portion 35 extending through the insulating sheet 31 in the thickness direction and a wiring portion 36 formed on the surface of the insulating sheet 31. It is connected to the.

As a material constituting the insulating sheet 31, it is preferable to use a resin material having a high mechanical strength, and specific examples thereof include a liquid crystal polymer and polyimide.
Moreover, as a material which comprises the ring-shaped electrode 33, the relay electrode 34, the short circuit part 35, and the wiring part 36, copper, nickel, gold | metal | money or the laminated body of these metals can be used.
Although the thickness of the insulating sheet 31 will not be specifically limited if the said insulating sheet 31 has a softness | flexibility, For example, it is preferable that it is 5-50 micrometers, More preferably, it is 8-25 micrometers.
The diameter of the through-hole 32 of the insulating sheet 31 may be a size that allows the inspection core electrode 45 of the second electrode sheet 40 to be described later to enter. For example, the diameter of the inspection core electrode 45 is 1.05 to 1.05. It is 2 times, preferably 1.1 to 1.7 times.
The inner diameter of the ring-shaped electrode 33 is set according to the diameter of the electrode to be inspected that is electrically connected to the ring-shaped electrode 33, and the electrical connection to the electrode to be inspected can be reliably achieved. It is preferably 50 to 110% of the diameter of the inspection electrode, more preferably 70 to 100%.
Further, the inner diameter of the ring-shaped electrode 33 is 1.1 to 2 times the diameter of the inspection core electrode 45 from the viewpoint of ensuring insulation with the inspection core electrode 45 in the second electrode sheet 40 described later. Is preferable, and more preferably 1.2 to 1.7 times.

  Such a 1st electrode sheet 30 can be manufactured as follows, for example. First, as shown in FIG. 7, a laminated material 30A in which a metal layer 36A is formed on the surface of the insulating sheet 31 is prepared, and the insulating sheet 31 and the metal are added to the laminated material 30A as shown in FIG. A plurality of through holes 30H penetrating each of the layers 36A in the thickness direction are formed according to the pattern of the short-circuit portions 35 of the first electrode sheet 30 to be formed. Next, by performing photolithography and plating on the laminated material 30A in which the through holes 30H are formed, a relay electrode 34 is formed on the back surface of the insulating sheet 31, as shown in FIG. 34 and the metal layer 36 </ b> A are electrically connected, and a short-circuit portion 35 extending in the thickness direction of the insulating sheet 31 is formed. Thereafter, the metal layer 36 is subjected to photolithography and etching to remove a part thereof, thereby forming the ring-shaped electrode 33 and the wiring portion 36 on the surface of the insulating sheet 31 as shown in FIG. . Then, by performing laser processing on the insulating sheet 31 using the ring-shaped electrode 33 as a mask, the through holes 32 are formed in the insulating sheet 31, and thus the first electrode sheet 30 is obtained.

FIG. 11 is an explanatory sectional view showing a part of the first anisotropically conductive elastomer sheet 37 in an enlarged manner. This first anisotropic conductive elastomer sheet 37 is in a state in which conductive particles P exhibiting magnetism are aligned in the thickness direction to form a chain in an insulating elastic polymer material, and The chain of the conductive particles P is contained in a state dispersed in the plane direction.
As the elastic polymer material forming the first anisotropic conductive elastomer sheet 37, a polymer material having a crosslinked structure is preferable. Various materials can be used as the curable polymer substance-forming material that can be used to obtain such an elastic polymer substance. Specific examples thereof include polybutadiene rubber, natural rubber, and polyisoprene rubber. , Conjugated diene rubbers such as styrene-butadiene copolymer rubber and acrylonitrile-butadiene copolymer rubber and hydrogenated products thereof, blocks such as styrene-butadiene-diene block copolymer rubber, styrene-isoprene block copolymer, etc. Examples include copolymer rubber and hydrogenated products thereof, chloroprene, urethane rubber, polyester rubber, epichlorohydrin rubber, silicone rubber, ethylene-propylene copolymer rubber, and ethylene-propylene-diene copolymer rubber. In these, it is preferable to use a silicone rubber from a viewpoint of durability, a moldability, and an electrical property.
As the silicone rubber, those obtained by crosslinking or condensing liquid silicone rubber are preferable. The liquid silicone rubber preferably has a viscosity of 10 ⁵ poise or less at a strain rate of 10 ⁻¹ sec, and may be any of a condensation type, an addition type, a vinyl group or a hydroxyl group. Good. Specific examples include dimethyl silicone raw rubber, methyl vinyl silicone raw rubber, methyl phenyl vinyl silicone raw rubber, and the like.
The silicone rubber preferably has a molecular weight Mw (referred to as a standard polystyrene-converted weight average molecular weight; the same shall apply hereinafter) of 10,000 to 40,000. Moreover, since favorable heat resistance is obtained in the anisotropically conductive elastomer sheet obtained, it means the molecular weight distribution index (the value of the ratio Mw / Mn between the standard polystyrene equivalent weight average molecular weight Mw and the standard polystyrene equivalent number average molecular weight Mn). The same shall apply hereinafter) is preferably 2 or less.

As the conductive particles P contained in the first anisotropic conductive elastomer sheet 37, the particles can be easily aligned in the thickness direction by a method described later, and therefore, conductive particles exhibiting magnetism are used. It is done. Specific examples of such conductive particles include magnetic metal particles such as iron, cobalt and nickel, alloy particles thereof, particles containing these metals, or these particles as core particles. The core particles are made by plating the surface of the core particles with a metal having good conductivity such as gold, silver, palladium, rhodium, or non-magnetic metal particles, inorganic particles such as glass beads, or polymer particles. The surface of the particles may be plated with a conductive magnetic metal such as nickel or cobalt.
Among these, it is preferable to use nickel particles as core particles and the surfaces thereof plated with gold having good conductivity.
The means for coating the surface of the core particles with the conductive metal is not particularly limited, and for example, chemical plating or electrolytic plating, sputtering, vapor deposition or the like is used.

When the conductive particles P used are those in which the surface of the core particles is coated with a conductive metal, good conductivity can be obtained. Therefore, the coverage of the conductive metal on the particle surface (the surface area of the core particles) The ratio of the covering area of the conductive metal with respect to is preferably 40% or more, more preferably 45% or more, and particularly preferably 47 to 95%.
Further, the coating amount of the conductive metal is preferably 0.5 to 50% by mass of the core particle, more preferably 2 to 30% by mass, further preferably 3 to 25% by mass, and particularly preferably 4 to 20%. % By mass. When the conductive metal to be coated is gold, the coating amount is preferably 0.5 to 30% by mass of the core particles, more preferably 2 to 20% by mass, and further preferably 3 to 15%. % By mass.

Moreover, it is preferable that the number average particle diameter of the electroconductive particle P is 3-20 micrometers, More preferably, it is 5-15 micrometers. When this number average particle diameter is too small, it may be difficult to orient the conductive particles P in the thickness direction in the production method described later. On the other hand, when the number average particle diameter is excessive, it may be difficult to obtain an anisotropic conductive elastomer sheet with high resolution.
The particle size distribution (Dw / Dn) of the conductive particles P is preferably 1 to 10, more preferably 1.01 to 7, still more preferably 1.05 to 5, and particularly preferably 1.1. ~ 4.
In addition, the shape of the conductive particles P is not particularly limited, but spherical particles, star-shaped particles, or agglomerated particles 2 can be easily dispersed in the polymer substance-forming material. Secondary particles are preferred.
Further, as the conductive particles P, those whose surfaces are treated with a coupling agent such as a silane coupling agent or a lubricant can be appropriately used. By treating the particle surface with a coupling agent or a lubricant, the durability of the resulting anisotropic conductive elastomer sheet is improved.

  Such conductive particles P are preferably contained in the anisotropic conductive elastomer sheet at a volume fraction of 10 to 40%, particularly 15 to 35%. When this ratio is too small, an anisotropic conductive elastomer sheet having sufficiently high conductivity in the thickness direction may not be obtained. On the other hand, if this ratio is excessive, the resulting anisotropic conductive elastomer sheet tends to be fragile, and the elasticity necessary for the anisotropic conductive elastomer sheet may not be obtained.

  Moreover, it is preferable that the thickness of the 1st anisotropically conductive elastomer sheet 37 is 20-100 micrometers, More preferably, it is 25-70 micrometers. When this thickness is too small, sufficient unevenness absorbing ability may not be obtained. On the other hand, if this thickness is excessive, high resolution may not be obtained.

The first anisotropic conductive elastomer sheet 37 can be manufactured as follows.
First, as shown in FIG. 12, each of the sheet-like one side molding member 50 and the other side molding member 51, and an opening 52K having a shape that matches the planar shape of the target first anisotropic conductive elastomer sheet 37. And a frame-shaped spacer 52 having a thickness corresponding to the thickness of the first anisotropic conductive elastomer sheet 37, and a liquid polymer substance-forming material that is cured to become an elastic polymer substance A conductive elastomer material containing conductive particles is prepared.
Then, as shown in FIG. 13, the spacer 52 is disposed on the molding surface (the upper surface in FIG. 13) of the other surface side molding member 51, and in the opening 52 </ b> K of the spacer 52 on the molding surface of the other surface side molding member 51. Then, the prepared conductive elastomer material 37B is applied, and then the one surface side molded member 50 is arranged on the conductive elastomer material 37B so that the molding surface (the lower surface in FIG. 13) is in contact with the conductive elastomer material 37B. To do.
In the above, as the one side molding member 50 and the other side molding member 51, a resin sheet made of polyimide resin, polyester resin, acrylic resin, or the like can be used.
Moreover, it is preferable that the thickness of the resin sheet which comprises the one surface side molded member 50 and the other surface side molded member 51 is 50-500 micrometers, More preferably, it is 75-300 micrometers. If this thickness is less than 50 μm, the strength required for the molded member may not be obtained. On the other hand, when the thickness exceeds 500 μm, it may be difficult to apply a magnetic field having a required strength to the conductive elastomer material layer described later.

Next, as shown in FIG. 14, using the pressure roll device 55 including the pressure roll 53 and the support roll 54, the conductive elastomer material 37 </ b> B is pinched by the one-side molding member 50 and the other-side molding member 51. Thus, a conductive elastomer material layer 37 </ b> A having a required thickness is formed between the one side molding member 50 and the other side molding member 51. In the conductive elastomer material layer 37A, as shown in an enlarged view in FIG. 15, the conductive particles P are contained in a uniformly dispersed state.
Thereafter, for example, a pair of electromagnets are disposed on the back surface of the one-surface-side molded member 50 and the back surface of the other-surface-side molded member 51, and by operating the electromagnet, a parallel magnetic field is generated in the thickness direction of the conductive elastomer material layer 37A. Make it work. As a result, in the conductive elastomer material layer 37A, the conductive particles P dispersed in the conductive elastomer material layer 37A maintain the state of being dispersed in the plane direction as shown in FIG. However, a plurality of conductive particles P, which are aligned in the thickness direction, are formed so as to be dispersed in the plane direction.
In this state, the conductive elastomer material layer 37A is cured, so that the conductive particles P are aligned in the thickness direction in the elastic polymer substance, and the conductive particles P are A first anisotropic conductive elastomer sheet 37 is produced which contains chains in a state dispersed in the plane direction.

In the above, the curing process of the conductive elastomer material layer 37A can be performed while the parallel magnetic field is applied, but can also be performed after the operation of the parallel magnetic field is stopped.
The intensity of the parallel magnetic field applied to the conductive elastomer material layer 37A is preferably 0.02 to 2.5 Tesla on average.
The curing process for the conductive elastomer material layer 37A is appropriately selected depending on the material to be used, but is usually performed by a heating process. The specific heating temperature and heating time are appropriately selected in consideration of the type of polymer material constituting the conductive elastomer material layer 37A, the time required to move the conductive particles P, and the like.

FIG. 17 is an explanatory cross-sectional view showing an enlarged main part of the second anisotropic conductive elastomer sheet. The second anisotropic conductive elastomer sheet 38 is in a state in which conductive particles P exhibiting magnetism are aligned in the thickness direction in the insulating elastic polymer material to form a chain, and The first anisotropic conductivity except that the chain of the conductive particles P is contained in a state dispersed in the plane direction, and a plurality of through holes 39 penetrating in the thickness direction are formed. The configuration is basically the same as that of the elastomer sheet 37. The through hole 39 of the second anisotropically conductive elastomer sheet 38 is formed according to a pattern corresponding to the pattern of the electrode to be inspected in the wafer to be inspected.
The diameter of the through hole 39 of the second anisotropic conductive elastomer sheet 38 may be a size that allows the inspection core electrode 45 of the second electrode sheet 40 described later to enter. The diameter is 1.1 to 2 times, preferably 1.2 to 1.7 times.
Such a second anisotropic conductive elastomer sheet 38 is produced by a method similar to that of the first anisotropic conductive elastomer sheet 37, and then the anisotropic conductive elastomer sheet is formed into the anisotropic conductive elastomer sheet. For example, it is obtained by forming the through hole 39 by performing laser processing.

FIG. 18 is an explanatory cross-sectional view showing an enlarged main part of the second electrode sheet 40. The second electrode sheet 40 includes a support sheet 41 having a plurality of openings 41K, an elastic anisotropic conductive film 42 formed so as to close each of the openings 41K of the support sheet 41, and the elastic anisotropic conductive film 42. A plurality of inspection core electrodes 45 each made of a disc-shaped metal and arranged on the surface of the elastic anisotropic conductive film 42 are arranged on the surface according to a pattern corresponding to the pattern of the electrode to be inspected on the wafer to be inspected. The first electrode sheet 10 includes a plurality of connecting core electrodes 46 each made of a disk-shaped metal and arranged according to a pattern corresponding to the pattern of the relay electrode 14 in the first electrode sheet 10.
In the elastic anisotropic conductive film 42, a plurality of conductive path forming portions 43 extending in the thickness direction are arranged so as to be positioned in the openings 41K of the support sheet 41 according to a specific pattern, and between the adjacent conductive path forming portions 43. In this case, an integral insulating portion 44 that insulates them from each other is formed in a state of being integrally bonded to the conductive path forming portion 43. The specific pattern of the conductive path formation portion 43 is a pattern corresponding to the pattern of the inspection core electrode 45 and the connection core electrode 46, and the inspection core electrode 45 or the connection is formed on each surface of the conductive path formation portion 43. A core electrode 46 is disposed. Each of the inspection core electrode 45 and the connection core electrode 46 (hereinafter collectively referred to as “core electrodes 45, 46”) is embedded in the insulating portion 44, and the side surfaces of the core electrodes 45, 46. Is provided in a state of being integrally bonded to the insulating portion 44.
Further, in the illustrated example, the core electrodes 45 and 46 and the peripheral portion of the core electrodes 45 and 46 in the insulating portion 44 are projected from the surface, whereby the core electrodes 45 and 46 are applied with a small pressure. Even when pressed, high conductivity is obtained as a result of the conductive path forming portion 43 being deformed so as to be surely compressed in the thickness direction.

Various metals are used as the metal constituting the core electrodes 45 and 46. Specific examples thereof include nickel, cobalt, copper, gold, silver, palladium, rhodium, ruthenium, iridium, platinum, tungsten, chromium or these. And alloys thereof.
The core electrodes 45 and 46 may be composed of two or more different metal layers. Even when the core electrodes 45 and 46 are formed of two or more different metal layers, each metal layer can be formed of the above metal or alloy.
Moreover, it is preferable that the thickness of the core electrodes 45 and 46 is 1-100 micrometers, More preferably, it is 5-40 micrometers.

As a material constituting the support sheet 41, various non-metallic materials and metallic materials having high mechanical strength can be used.
Specific examples of non-metallic materials include resin materials such as liquid crystal polymers, polyimide resins, polyester resins, polyaramid resins, polyamide resins, glass fiber reinforced epoxy resins, glass fiber reinforced polyester resins, glass fiber reinforced polyimide resins, etc. Examples thereof include a fiber reinforced resin material, an epoxy resin, and a composite resin material containing an inorganic material such as alumina or poron nitride as a filler.
Examples of the metal material include gold, silver, copper, iron, nickel, cobalt, alloys thereof, and alloy steels.
The thickness of the support sheet 41 is preferably 10 to 200 μm, more preferably 15 to 100 μm. When this thickness is too small, the strength required for the support sheet 41 may not be obtained. On the other hand, if this thickness is excessive, the thickness of the elastic anisotropic conductive film 42 is inevitably increased, and therefore, good conductivity may not be obtained.

The conductive path forming portion 43 in the elastic anisotropic conductive film 42 is configured such that conductive particles P exhibiting magnetism are contained in an insulating elastic polymer material so as to be aligned in the thickness direction. On the other hand, the insulating portion 44 is made of an elastic polymer material that does not contain the conductive particles P at all. The elastic polymer material constituting the conductive path forming portion 43 and the elastic polymer material constituting the insulating portion 44 may be different types or the same type.
The elastic polymer material constituting the conductive path forming portion 43 and the insulating portion 44 and the conductive particles P constituting the conductive path forming portion 43 include the elastic polymer material constituting the first anisotropic conductive elastomer sheet. Further, those exemplified as the conductive particles can be appropriately selected and used.
Moreover, it is preferable that the electroconductive particle P is contained in the ratio used as 15 to 45%, especially 20 to 40% by volume fraction in the conductive path formation part 43. FIG. When this ratio is too small, the conductive path forming part 43 having a sufficiently small electric resistance value may not be obtained. On the other hand, when this ratio is excessive, the obtained conductive path forming portion 43 tends to be fragile, and the elasticity necessary for the conductive path forming portion 43 may not be obtained.

In the present invention, the second electrode sheet 40 is
By opening a conductive elastomer layer containing conductive particles exhibiting magnetism formed so as to close the opening 41K of the support sheet 41 so as to be aligned in the thickness direction, laser processing is performed on the opening 41K of the support sheet 41. A plurality of conductive path forming portions 43 are formed therein, and an insulating portion material layer made of a polymer material forming material that is cured and becomes an elastic polymer material is formed between the conductive path forming portions 43. A step (a) of manufacturing a first intermediate body in which a plurality of conductive path forming portions 43 and insulating material layers are formed in the openings 41K of the support sheet 41; A core electrode 45 and a plurality of connection core electrodes 46 are formed, and a polymer substance forming material that is cured and becomes an elastic polymer substance between the inspection core electrode 45 and the connection core electrode 46 is formed. Forming a second intermediate body in which a plurality of inspection core electrodes 45, a plurality of connecting core electrodes 46, and an insulating portion material layer are formed on a metal film. Step (b);
The second intermediate body is stacked on the first intermediate body so that each of the inspection core electrode 45 and the connection core electrode 46 corresponding to each of the conductive path forming portions 43 is in contact with each other. And the step (c) of forming the insulating portion 44 by curing the respective insulating portion material layers of the first intermediate body and the second intermediate body. preferable.
Hereinafter, the manufacturing method of the 2nd electrode sheet 40 is demonstrated concretely.

<< Step a >>
First, a metal mask composite having a plurality of metal masks arranged according to a specific pattern is manufactured.
Specifically, as shown in FIG. 19, a resist layer in which openings 47K are formed on a metal foil 47F according to a specific pattern corresponding to the pattern of the conductive path forming portion 43 to be formed by a photolithography technique. 47R is formed. Thereafter, the surface of the portion of the metal foil 47F exposed through the opening 47K of the resist layer 47R is plated with a metal exhibiting magnetism, thereby forming each of the openings 47K of the resist layer 47R as shown in FIG. A metal mask 47M is formed. As a result, a metal mask composite 47C in which the metal mask 47M is formed according to the specific pattern on the metal foil 47F is obtained.

In the above, copper, nickel, etc. can be used as a material constituting the metal foil 47F. The metal foil may be laminated on a resin film.
The thickness of the metal foil 47F is preferably 0.05 to 2 μm, more preferably 0.1 to 1 μm. When this thickness is too small, a uniform thin layer is not formed, which may be inappropriate as a plating electrode. On the other hand, if this thickness is excessive, it may be difficult to remove by, for example, etching.
The thickness of the resist layer 47R is set according to the thickness of the metal mask 47M to be formed. As a material constituting the metal mask 47M, it is preferable to use a material exhibiting magnetism in that the conductive particles can be unevenly distributed by the action of a magnetic field in the formation of a conductive elastomer layer to be described later. Examples thereof include nickel, cobalt, and alloys thereof.
The thickness of the metal mask 47M is preferably 1 to 100 μm, more preferably 5 to 40 μm.

Next, as shown in FIG. 21, for example, a support sheet 41 is disposed on the surface of a plate-like support 48, and a magnetic material is formed in a liquid polymer material forming material that is cured to become an insulating elastic polymer material. The conductive elastomer material layer 43 </ b> A is formed so as to close the opening 41 </ b> K of the support sheet 41 by applying a conductive elastomer material containing conductive particles. Then, as shown in FIG. 22, a metal mask composite 47C is disposed on the conductive elastomer material layer 43A so that each of the metal masks 47M is in contact with the conductive elastomer material layer 43A. Here, the conductive elastomer material layer 43A contains the conductive particles P exhibiting magnetism in a dispersed state.
Next, a magnetic field is applied to the conductive elastomer material layer 43A through the metal mask 47M in the thickness direction of the conductive elastomer material layer 43A. Thereby, since the metal mask 47M is formed of a metal exhibiting magnetism, a magnetic field having a stronger intensity than that of the other portions is formed in the portion where the metal mask 47M is disposed in the conductive elastomer material layer 43A. . As a result, the conductive particles P dispersed in the conductive elastomer material layer 43A gather at the portion where the metal mask 47M is disposed as shown in FIG. 23, and further, the conductive elastomer material layer 43A. Are aligned in the thickness direction. Then, while continuing the action of the magnetic field on the conductive elastomer material layer 43A, or after stopping the action of the magnetic field, the conductive elastomer material layer 43A is cured, as shown in FIG. A conductive elastomer layer 43 </ b> B is formed in a state in which the conductive particles P are contained in the polymer material in an aligned state in the thickness direction so as to be supported on the support 48.

In the above, metals, ceramics, resins, composite materials thereof, and the like can be used as the material constituting the support 48.
As a method for applying the conductive elastomer material, a printing method such as screen printing, a roll coating method, a blade coating method, or the like can be used.
The thickness of the conductive elastomer material layer 43A is set according to the thickness of the conductive path forming portion to be formed.
As a means for applying a magnetic field to the conductive elastomer material layer 43A, an electromagnet, a permanent magnet, or the like can be used.
The intensity of the magnetic field applied to the conductive elastomer material layer 43A is preferably 0.2 to 2.5 Tesla.
The curing process of the conductive elastomer material layer 43A is usually performed by a heating process. The specific heating temperature and heating time are appropriately set in consideration of the type of the polymer substance forming material constituting the conductive elastomer material layer 43A, the time required for the movement of the conductive particles, and the like.

Next, the metal foil 47F in the metal mask composite 47C disposed on the conductive elastomer layer 43B is removed by performing an etching process, thereby removing the metal mask 47M and the resist layer 47R as shown in FIG. Expose. Then, by applying laser processing to the conductive elastomer layer 43B and the resist layer 47R, the peripheral portions of the portions where the metal mask 47M is disposed in the resist layer 47R and the conductive elastomer layer 43B are removed. As shown in FIG. 26, a plurality of conductive path forming portions 43 arranged according to a specific pattern are formed in the opening 41 </ b> K of the support sheet 41 while being supported on the support 48. Thereafter, the remaining resist layer 47R remaining on the remaining surfaces of the metal mask 47M and the conductive elastomer layer 43B is removed.
Here, the laser processing is preferably performed by a carbon dioxide laser or an ultraviolet laser, whereby the conductive path forming portion 43 having a desired form can be reliably formed.

  Then, by supplying a material for an insulating portion made of a polymer material forming material that is cured and becomes an elastic polymer material to the region where the conductive elastomer layer 43B is removed from the support 48, as shown in FIG. The insulating portion material layer 44A is formed between the plurality of conductive path forming portions 43 supported on the support 48, and thus the plurality of conductive path forming portions 43 and the insulating portion material layer are formed on the support 48. A first intermediate 40A formed by forming 44A is manufactured.

<< Process b >>
First, as shown in FIG. 28, the opening 49K was formed on the metal film 49F by photolithography according to a specific pattern of the conductive path forming portion to be formed, that is, a pattern corresponding to the pattern of the electrode to be connected. A resist layer 49R is formed. Next, the surface of the portion of the metal film 49F exposed through the opening 49K of the resist layer 49R is plated with a metal exhibiting magnetism, so that each of the openings 49K in the resist layer 49R is formed as shown in FIG. Core electrodes 45 and 46 are formed. Thereafter, by removing the resist layer 49R from the metal foil 49F, as shown in FIG. 30, a core electrode complex 49C in which core electrodes 45 and 46 are formed on the metal film 49F according to a pattern corresponding to a specific pattern. Is obtained.
In the above, copper, nickel, or the like can be used as a material constituting the metal film 49F. The metal film 49F may be laminated on a resin film.
The thickness of the metal film 49F is preferably 0.05 to 2 μm, more preferably 0.1 to 1 μm. When this thickness is too small, a uniform thin layer is not formed, which may be inappropriate as a plating electrode. On the other hand, if this thickness is excessive, it may be difficult to remove by, for example, etching.
The thickness of the resist layer 49R is set according to the thickness of the core electrodes 45 and 46 to be formed.

  Then, by supplying a material for an insulating portion made of a polymer material forming material which is cured and becomes an elastic polymer material to a region other than the region where the core electrodes 45 and 46 are formed on the metal film 49F, FIG. As shown in FIG. 5, the insulating portion material layer 44B is formed between the plurality of core electrodes 45 and 46 formed on the metal film 49F, and thus the plurality of core electrodes 45 and 46 and the insulation on the metal film 49F. The second intermediate body 40B formed with the part material layer 44B is manufactured.

<< Process c >>
As shown in FIG. 32, the second intermediate body 40B manufactured in the step b is replaced with the first intermediate body 40A manufactured in the step a by each of the conductive path forming portions 43 in the first intermediate body 40A. Each of the core electrodes 45 and 46 in the second intermediate body 40B corresponding thereto is stacked so as to be in contact with each other, and further pressurized, thereby deforming each of the conductive path forming portions 43 into a state compressed in the thickness direction. . Thereafter, in this state, each of the insulating material layer 44A in the first intermediate body 40A and the insulating material layer 44B in the second intermediate body 40B is subjected to curing treatment, as shown in FIG. An insulating portion 44 that insulates the conductive path forming portion 43 from each other is formed in a state of being integrally bonded to each of the conductive path forming portion 43 and the core electrodes 45 and 46, and thus elastic anisotropic conductive A film 42 is formed.
Then, by removing the support 48 and the metal film 49F, each of the compressed conductive path forming portions 43 is restored to the original form. As a result, the conductive path forming portion 43, the core electrodes 45 and 46, and the insulating portion 44 The peripheral portions of the core electrodes 45 and 46 are projected, and thus the second electrode sheet 40 having the configuration shown in FIG. 18 is obtained.
In the above, the curing treatment of the insulating portion material layer 44A and the insulating portion material layer 44B is usually performed by heat treatment. The specific heating temperature and heating time are appropriately set in consideration of the type of polymer material forming material constituting the insulating part material layer 44A and the insulating part material layer 44B.

According to the above manufacturing method, the first intermediate body 40A in which the insulating portion material layer 44A is formed between the plurality of conductive path forming portions 43 and the insulating portion portion between the plurality of core electrodes 45 and 46. In the second electrode sheet 40 obtained by stacking the second intermediate body 40B formed with the material layer 44B and curing each of the insulating portion material layers 44A and 44B, the core electrode Since 45 and 46 are fixed in a state of being embedded in the insulating portion 44, it is possible to prevent the core electrodes 45 and 46 from being detached from the conductive path forming portion 43 at an early stage.
In addition, since the conductive path forming portion 43 is formed by laser processing the conductive elastomer layer 43B, the conductive path forming portion 43 containing the required amount of the conductive particles P is reliably obtained. In addition, after forming a plurality of conductive path forming portions 43 arranged according to a specific pattern, insulating layer material layers 44A and 44B are formed between these conductive path forming portions 43 and cured to insulate. Since the portion 44 is formed, the insulating portion 44 in which the conductive particles P are not present can be surely obtained.

  In addition, a magnetic field is formed in the thickness direction of the conductive elastomer material layer 43A in a state where a metal mask 47M showing magnetism is arranged on the conductive elastomer material layer 43A according to a specific pattern of the conductive path forming portion 43 to be formed. And the conductive elastomer layer 43B obtained by curing the conductive elastomer material layer 43A becomes dense with the conductive particles P in the portions that become the conductive path forming portions 43, and the other portions. That is, since the conductive particles P in the portion to be removed become sparse, by performing laser processing on the conductive elastomer layer 43B, a portion other than the portion that becomes the conductive path forming portion 43 can be easily removed. The conductive path forming portion 43 having the desired form can be formed.

In the probe card 10, as shown in FIG. 34, each of the inspection core electrodes 45 in the electrical resistance measurement connector 20 is provided above the inspection target electrode 7 in the wafer 6 on one surface of the wafer 6 to be inspected. The probe card 10 is arranged so as to be positioned at the position, and the probe card 10 is further pressed by an appropriate means. In this state, as shown in FIG. 35, each of the ring-shaped electrodes 33 in the first electrode sheet 30 is inspected on the wafer 6 via the first anisotropic conductive elastomer sheet 37. Each of which is electrically connected. In addition, each of the inspection core electrodes 45 in the second electrode sheet 40 enters the through hole 39 of the second anisotropic conductive elastomer sheet 38 and the through hole 32 of the first electrode sheet 30, so that the first The anisotropic conductive elastomer sheet 37 is electrically connected to each of the electrodes 7 to be inspected on the wafer 6. Each of the connecting core electrodes 46 of the second electrode sheet 40 is electrically connected to the relay electrode 34 in the first electrode sheet 30 via the second anisotropic conductive elastomer sheet 38. Further, each of the inspection core electrode 45 and the connection core electrode 46 in the second electrode sheet 40 is connected to the second substrate element in the inspection circuit board via the conductive path forming portion 43 in the elastic anisotropic conductive film 42. Electrically connected to 15 inspection electrodes 16.
At this time, since the ring-shaped electrode 33 in the first electrode sheet 30 is formed so as to surround the through hole 32 of the insulating sheet 31, as shown in FIG. 36, the ring electrode 33 is formed in the through hole 32 of the insulating sheet 31. Even if the center position of the entering inspection core electrode 45 is displaced from the center position of the electrode 7 to be inspected, if the inspection core electrode 45 is electrically connected to the electrode 6 to be inspected, the ring shape The electrode 33 is always electrically connected to the electrode 7 to be inspected.
In such a state, one inspection electrode 7 among the plurality of inspection electrodes 7 on the wafer 6 is designated, and the inspection core electrode 45 and the ring that are electrically connected to the designated inspection electrode 7 By using one of the electrode electrodes 33 as a current supply electrode and the other as a voltage measurement electrode, the electrical resistance of the designated electrode 7 to be inspected is measured.

According to the probe card 10 having the above-described configuration, the through-hole 32 through which the core electrode 45 for inspection of the second electrode sheet 40 enters the insulating sheet 31 of the first electrode sheet 30 in the electrical resistance measurement connector 20. Since a ring-shaped electrode 33 is formed around the through-hole 32 so as to surround the through-hole 32, a core electrode for inspection is formed on the inspection target electrode 7 of the wafer 6 to be inspected. If the alignment is performed so that at least a part of 45 is positioned, at least a part of the ring-shaped electrode 33 is positioned on the electrode 7 to be inspected. Therefore, the wafer 6 has a large area and a size. Even with a small number of small electrodes 7 to be inspected, it is possible to reliably achieve the electrical connection of both the inspection core electrode 45 and the ring electrode 33 to the electrode 7 to be inspected. . Moreover, since the inspection core electrode 45 and the ring-shaped electrode 33 are electrically independent from each other, one of the inspection core electrode 45 and the ring-shaped electrode 33 electrically connected to the electrode 7 to be inspected is connected. By using the current supply electrode and the other as the voltage measurement electrode, the electrical resistance of the wafer 6 can be measured with high accuracy.
In addition, since the first electrode sheet 30 and the second electrode sheet 40 have simple structures, the entire electrical resistance measuring connector 20 can be manufactured at a low cost. Accordingly, the inspection cost can be reduced.

[Wafer inspection equipment]
FIG. 37 is an explanatory cross-sectional view showing an outline of the configuration of an example of a wafer inspection apparatus according to the present invention, and FIG. 38 is an explanatory cross-sectional view showing an enlarged main part of the wafer inspection apparatus shown in FIG. is there. This wafer inspection apparatus is for collectively measuring the electrical resistance of each circuit in a plurality of integrated circuits formed on a wafer in the state of the wafer.
This wafer inspection apparatus detects the temperature control of the wafer 6 to be inspected, the power supply for inspecting the wafer 6, the signal input / output control, and the output signal from the wafer 6 to detect the integrated circuit on the wafer 6. It has a controller 2 for determining pass / fail. As shown in FIG. 39, the controller 2 has an input / output terminal portion 3R on the lower surface of which a large number of input / output terminals 3 are arranged along the circumferential direction.
Below the controller 2, the probe card 10 having the configuration shown in FIG. 1 is provided by appropriate holding means so that each of the lead electrodes 13 of the inspection circuit board 11 faces the input / output terminal 3 a of the controller 2. Arranged in a held state.
A connector 4 is disposed between the input / output terminal portion 3R of the controller 2 and the lead electrode portion 13R of the inspection circuit board 11 in the probe card 10, and the connector 4 allows the lead electrode 13 of the inspection circuit board 11 to be connected. Each is electrically connected to each of the input / output terminals 3 of the controller 2. The connector 4 in the illustrated example includes a plurality of conductive pins 4A that can be elastically compressed in the length direction, and a support member 4B that supports these conductive pins 4A. They are arranged so as to be positioned between the output terminal 3 and the lead electrode 33 formed on the first substrate element 32.
Below the probe card 10, a wafer mounting table 5 on which a wafer 6 to be inspected is mounted is provided.

In such a wafer inspection apparatus, the wafer 6 to be inspected is placed on the wafer mounting table 5, and then the probe card 10 is pressed downward, so that the wafer 6 becomes the prok card 10 and the wafer. It is clamped by the mounting table 5.
In this state, as shown in FIG. 35, each of the electrodes 7 to be inspected on the wafer 6 has a first anisotropic conductive elastomer sheet on both the ring electrode 33 and the inspection core electrode 45 in the probe card 10. 37, and each of the inspection core electrode 45 and the connection core electrode 46 is connected to the second substrate element in the inspection circuit board via the conductive path forming portion 43 in the elastic anisotropic conductive film 42. The 15 test electrodes 16 are electrically connected.
In this manner, each of the electrodes 7 to be inspected on the wafer 6 is electrically connected to the inspection electrode 16, thereby achieving a state of being electrically connected to the input / output terminal 3 of the controller 2. This state is a measurable state.
In this measurable state, one of the plurality of electrodes 7 to be inspected on the wafer 6 is designated, and the inspection core electrode 45 electrically connected to the designated electrode 7 to be inspected. And one of the ring-shaped electrodes 33 as a current supply electrode and the other as a voltage measurement electrode, the inspection core electrode 45 or the ring-shaped electrode 33, which is a current supply electrode, and a specified substrate An inspection core electrode 45 or a ring-shaped electrode 33 electrically connected to an inspection electrode 7 corresponding to the inspection electrode 7 (the other inspection electrode 7 constituting a terminal of a circuit together with the designated inspection electrode 7); In addition, a current is supplied between the electrodes, and the inspection core electrode 45 or the ring-shaped electrode 33, which is a voltage measuring electrode, is electrically connected to the inspection electrode 7 corresponding to the designated inspection electrode 7. The voltage between the inspected core electrode 45 or the ring-shaped electrode 33 is measured, and based on the obtained voltage value, between the designated inspected electrode 7 and the corresponding inspected electrode 7. The electric resistance value of the formed circuit is acquired. Then, the electrical resistance of all the circuits formed on the wafer 6 is measured by sequentially changing the designated inspection target electrodes 7.

  According to the above wafer inspection apparatus, since the probe card 10 having the configuration shown in FIG. 1 is provided, even if the wafer 6 to be inspected has a large area and a large number of small electrodes 7 to be inspected, Electrical connection to the inspection electrode 7 can be reliably achieved, and the electrical resistance of the wafer 6 can be measured with high accuracy.

The present invention is not limited to the above embodiment, and various modifications can be made as follows.
(1) The probe card 10 is used to collectively measure the electrical resistance of the electrodes to be inspected in all the integrated circuits formed on the wafer. In the present invention, a part of the probe card 10 is formed on the wafer. The electrical resistances related to the electrodes to be inspected in (for example, 32 pieces) of integrated circuits may be collectively measured. In the probe card having such a configuration, the probe card 10 is electrically connected to the inspected electrodes of a plurality of (for example, 32) integrated circuits selected from all the integrated circuits formed on the wafer. By measuring the electrical resistance, and then repeating the process of measuring the electrical resistance by electrically connecting the probe card to the electrodes to be tested of a plurality of integrated circuits selected from other integrated circuits, The electric resistance of each circuit in all integrated circuits formed on the wafer can be measured.
(2) The connector 4 for electrically connecting the controller 2 and the inspection circuit board 11 in the wafer inspection apparatus is not limited to the one shown in FIG. 39, and various structures can be used.

(3) In step (a) in the method of manufacturing the second electrode sheet 40, the ferromagnetic part is formed as a support for forming the conductive path forming part according to a pattern corresponding to the pattern of the conductive path forming part 43 to be formed. Can be used. The structure of an example of such a support is shown in FIG. The support 56 has a metal film 57 that forms the surface on which the conductive elastomer material layer is formed, and a pattern corresponding to the pattern of the conductive path forming portion 43 to be formed on the back surface of the metal film 57. Accordingly, the ferromagnetic portion 58 is disposed, and the nonmagnetic portion 59 is disposed in the other region.
As a material constituting the metal film 57, nickel, gold, copper, or the like can be used.
As a material constituting the ferromagnetic portion 58, nickel, cobalt, an alloy thereof, or the like can be used.
A photoresist can be used as a material constituting the nonmagnetic portion 59.
As shown in FIG. 41, such a support 56 is formed of a photoresist on a nonmagnetic part 59 having openings 58K formed on a metal film 57 in accordance with the pattern of the ferromagnetic part 58 to be formed. Thereafter, the surface of the portion exposed through the opening 58K of the nonmagnetic portion 59 in the metal film 57 can be manufactured by plating.

In such a support 56, the conductive path forming portion 43 is formed as follows. First, as shown in FIG. 42, the support sheet 41 is disposed on the surface of the metal film 57 of the support 56, and the conductive elastomer material layer 43A is formed so as to close the opening 41K of the support sheet 41. The metal mask composite 47C is disposed on the conductive elastomer material layer 43A so that each of the metal masks 47M is in contact with the conductive elastomer material layer 43A. Next, a magnetic field is applied to the conductive elastomer material layer 43A via the metal mask 47M and the ferromagnetic portion 58 of the support 56 in the thickness direction of the conductive elastomer material layer 43A, thereby making the conductive layer conductive. In the portion of the elastomer material layer 43 </ b> A located between the metal mask 47 </ b> M and the ferromagnetic portion 58 of the support 56, a magnetic field having a higher strength than that of the other portions is formed. As a result, the conductive particles P dispersed in the conductive elastomer material layer 43A are located in a portion located between the metal mask 47M and the ferromagnetic portion 58 of the support 56 as shown in FIG. They are gathered and further oriented so as to be aligned in the thickness direction of the conductive elastomer material layer 43A. Then, while continuing the action of the magnetic field on the conductive elastomer material layer 43A, or after stopping the action of the magnetic field, the conductive elastomer material layer 43A is cured, as shown in FIG. A conductive elastomer layer 43 </ b> B is formed in a state in which the conductive particles P are contained in the polymer material in an aligned state in the thickness direction so as to be supported on the support 56.
Thereafter, the metal foil 47F in the metal mask composite 47C disposed on the conductive elastomer layer 43B is removed by etching to remove the metal mask 47M and the resist layer 47R as shown in FIG. Expose. Then, by applying laser processing to the conductive elastomer layer 43B and the resist layer 47R, a part of the resist layer 47R and the conductive elastomer layer 43B is removed. As a result, as shown in FIG. A plurality of conductive path forming portions 43 arranged according to the above are formed on the support 56 in a supported state.

  According to such a method using the support 56, a magnetic field having a higher strength than that of the other portions can be applied to the conductive elastomer material layer 43A on the portion where the metal mask 47M is disposed. In the obtained conductive elastomer layer 43B, the conductive particles P in the portion where the metal mask 47M is disposed become denser, and the conductive particles P in the other portions become more sparse. Therefore, even if the thickness of the conductive elastomer layer 43 is considerably large, the conductive path forming portion 43 having a desired shape can be formed by laser processing the conductive elastomer layer 43B.

(4) As the second electrode sheet 40, as shown in FIG. 47, a support sheet 41 in which a single opening 41K is formed, and a single elastic member arranged so as to close the opening 41K of the support sheet 41 The structure which consists of an anisotropic conductive film 42 may be sufficient.
As shown in FIG. 48, the second electrode sheet 40 includes a support sheet 41 in which a plurality of openings 41K are formed, and a plurality of elastic different members arranged so as to respectively close one opening 41K of the support sheet 41. It may have a configuration composed of a conductive film 43.
Furthermore, as the second electrode sheet 40, a support sheet in which a plurality of openings are formed, one or more elastic anisotropic conductive films arranged so as to close one opening of the support sheet, and a plurality of support sheets The structure which consists of 1 or 2 or more elastic anisotropic conductive films arrange | positioned so that the opening of this may be plugged may be sufficient.

It is sectional drawing for description which shows the structure of an example of the probe card based on this invention. It is sectional drawing for description which expands and shows the structure of the principal part of the probe card shown in FIG. It is a top view which shows the circuit board for a test | inspection in the probe card shown in FIG. It is explanatory drawing which expands and shows the lead electrode part in the circuit board for a test | inspection. It is a top view which expands and shows the principal part of the 1st electrode sheet in the electrical resistance measurement connector. It is sectional drawing for description which expands and shows the principal part of the 1st electrode sheet in the electrical resistance measurement connector. It is sectional drawing for description which shows the laminated material for obtaining a 1st electrode sheet. It is sectional drawing for description which shows the state by which the through-hole was formed in the laminated material. It is sectional drawing for description which shows the state by which the relay electrode and the short circuit part were formed in the insulating sheet in a laminated material. It is sectional drawing for description which shows the state by which the ring-shaped electrode and the wiring part were formed in the insulating sheet in a laminated material. It is sectional drawing for description which expands and shows the principal part of a 1st anisotropically conductive elastomer sheet. It is sectional drawing for description which shows the 1st surface side molded member, the other surface side molded member, and spacer for manufacturing a 1st anisotropically conductive elastomer sheet. It is sectional drawing for description which shows the state by which the material for conductive elastomer was apply | coated to the surface of the other surface side molded member. It is sectional drawing for description which shows the state in which the conductive elastomer material layer was formed between the one surface side molded member and the other surface side molded member. It is sectional drawing for description which expands and shows the material layer for electroconductive elastomers shown in FIG. It is sectional drawing for description which shows the state which acted the magnetic field on the thickness direction with respect to the material layer for conductive elastomers shown in FIG. It is sectional drawing for description which expands and shows the principal part of a 2nd anisotropically conductive elastomer sheet. It is sectional drawing for description which expands and shows the principal part of a 2nd electrode sheet. It is sectional drawing for description which shows the state in which the resist layer which has the some opening formed according to the specific pattern on the metal foil was formed. It is sectional drawing for description which shows the state in which the metal mask was formed in each opening of a resist layer, and the metal mask composite_body | complex was formed. It is sectional drawing for description which shows the state by which the support sheet was arrange | positioned on the support body and the material layer for conductive elastomers was formed. It is sectional drawing for description which shows the state by which the metal mask composite body has been arrange | positioned on the surface of the material layer for conductive elastomers. It is sectional drawing for description which shows the state by which the magnetic field was acted on the thickness direction of the conductive elastomer material layer. It is sectional drawing for description which shows the state in which the conductive elastomer layer was formed on the support body. It is sectional drawing for description which shows the state from which the metal foil of the metal mask composite was removed. It is sectional drawing for description which shows the state in which the several conductive path formation part was formed according to the specific pattern on the support body. It is sectional drawing for description which shows the structure of a 1st intermediate body. It is sectional drawing for description which shows the state in which the resist layer which has the some opening formed according to the specific pattern on the metal film was formed. It is sectional drawing for description which shows the state in which the core electrode for a test | inspection and the core electrode for a connection were formed in each opening of a resist layer. It is sectional drawing for description which shows the structure of a core electrode composite_body | complex. It is sectional drawing for description which shows the structure of a 2nd intermediate body. It is sectional drawing for description which shows the state in which the 1st intermediate body and the 2nd intermediate body were piled up. It is sectional drawing for description which shows the state by which the insulating part was formed between the adjacent conductive path formation parts. It is sectional drawing for description which shows the state by which the probe card based on this invention was arrange | positioned on the one surface of a wafer. It is sectional drawing for description which shows the state by which the probe card was pressed. It is explanatory drawing which shows the state which the position shift produced with respect to the to-be-inspected electrode. It is sectional drawing for description which shows the structure in an example of the wafer inspection apparatus which concerns on this invention. FIG. 38 is an explanatory sectional view showing, in an enlarged manner, a configuration of a main part of the wafer inspection apparatus shown in FIG. 37. FIG. 38 is an explanatory cross-sectional view showing an enlarged connector in the wafer inspection apparatus shown in FIG. 37. It is sectional drawing for description which shows the structure in the other example of a support body. It is sectional drawing for description which shows the state by which the non-magnetic-material part was formed on the metal film. It is sectional drawing for description which shows the state by which the metal mask composite body was arrange | positioned on the surface of the material layer for conductive elastomers formed on the support body shown in FIG. It is sectional drawing for description which shows the state by which the magnetic field was acted on the thickness direction of the conductive elastomer material layer. It is sectional drawing for description which shows the state in which the conductive elastomer layer was formed on the support body shown in FIG. It is sectional drawing for description which shows the state from which the metal foil of the metal mask composite was removed. It is sectional drawing for description which shows the state by which the several conductive path formation part was formed according to the specific pattern on the support body shown in FIG. It is explanatory drawing which shows the structure in the other example of the 2nd electrode sheet. It is explanatory drawing which shows the structure in the further another example of a 2nd electrode sheet. It is a schematic diagram of the apparatus which measures the electrical resistance between the electrodes in a circuit board with the probe for electric current supply, and the probe for voltage measurement. In the conventional electrical resistance measuring apparatus of a circuit, it is explanatory drawing which shows the state by which the electrode for electric current supply and the electrode for a voltage measurement are arrange | positioned appropriately on the to-be-tested electrode. In the conventional electrical resistance measuring apparatus of a circuit, it is explanatory drawing which shows the state arrange | positioned in the state which the electrode for electric current supply and the electrode for voltage measurement shifted on the to-be-tested electrode.

Explanation of symbols

2 Controller 3 Input / output terminal 3R Input / output terminal section 4 Connector 4A Conductive pin 4B Support member 5 Wafer mounting table 6 Wafer 7 Electrode 10 Probe card 11 Inspection circuit board 12 First substrate element 13 Lead electrode 13R Lead electrode section 14 Holder 14K Opening 15 Second substrate element 16 Inspection electrode 16R Inspection electrode portion 17 Reinforcing member 20 Electrical resistance measurement connector 30 First electrode sheet 30A Laminated material 30H Through hole 31 Insulating sheet 32 Through hole 33 Ring shape Electrode 34 Relay electrode 35 Short-circuit portion 36 Wiring portion 36A Metal layer 37 First anisotropic conductive elastomer sheet 37A Conductive elastomer material layer 37B Conductive elastomer material 38 Second anisotropic conductive elastomer sheet 39 Through hole 40 Second electrode sheet 40A First intermediate body 40B Second intermediate body 41 Support sheet 41K Opening 42 Elastic anisotropic conductive film 43 Conductive path forming portion 43A Conductive elastomer material layer 43B Conductive elastomer layer 44 Insulating portions 44A and 44B Insulating portion material layer 45 Core electrode 46 for inspection Connecting core electrode 47C Metal mask composite 47F Metal foil 47M Metal mask 47K Opening 47R Resist layer 48 Support 49C Contact member composite 49F Metal film 49K Opening 49R Resist layer 50 One side molding member 51 The other side molding member 52 Spacer 52K Opening 53 Pressurizing roll 54 Supporting roll 55 Pressurizing roll device 56 Supporting body 57 Metal film 58 Ferromagnetic part 58K Opening 59 Nonmagnetic part 90 Inspection object 91, 92 Inspected electrode 93 Power supply 94 Electric signal processing device PA , PD Current supply probe PB, PC Voltage measurement probe A Flow supply electrodes V voltage detection electrode T to be inspected electrode P conductive particles

Claims (4)

A probe card for wafer inspection used for measuring the electrical resistance of each circuit in all or some integrated circuits formed on a wafer to be inspected in the state of the wafer, comprising an inspection circuit board, Comprising an electrical resistance measuring connector arranged on the surface of the circuit board for inspection,
The electrical resistance measurement connector is disposed on the first electrode sheet, the first anisotropic conductive elastomer sheet disposed on the surface of the first electrode sheet, and the back surface of the first electrode sheet. A second anisotropic conductive elastomer sheet, and a second electrode sheet disposed on the back surface of the second anisotropic conductive elastomer sheet,
The first electrode sheet includes a flexible insulating sheet having a plurality of through holes formed according to a pattern corresponding to the pattern of the electrode to be inspected, and a through hole of the insulating sheet on the surface of the insulating sheet. A plurality of ring-shaped electrodes formed so as to surround, and a relay electrode formed on the back surface of the insulating sheet and electrically connected to the ring-shaped electrode;
The second anisotropic conductive elastomer sheet has a plurality of through holes formed according to a pattern corresponding to the pattern of the electrode to be inspected,
The second electrode sheet corresponds to a support sheet having an opening, an elastic anisotropic conductive film formed so as to close the opening of the support sheet, and a pattern of the electrode to be inspected on the surface of the elastic anisotropic conductive film A plurality of inspection core electrodes arranged according to the pattern to be connected, and a plurality of connection core electrodes arranged according to a pattern corresponding to the pattern of the relay electrode in the first electrode sheet on the surface of the elastic anisotropic conductive film. Have
The elastic anisotropic conductive film is arranged according to a pattern corresponding to the pattern of the inspection core electrode and the connection core electrode, and is oriented so that conductive particles exhibiting magnetism are arranged in the thickness direction in the elastic polymer material. A plurality of conductive path forming parts contained in a state, and an insulating part made of an elastic polymer material that insulates these conductive path forming parts from each other, and is formed on each surface of the conductive path forming part. The inspection core electrode or the connection core electrode is disposed,
The inspection core electrode enters the through hole of the second anisotropic conductive elastomer sheet and the through hole of the insulating sheet in the first electrode sheet, and passes through the first anisotropic conductive elastomer sheet. A wafer inspection probe card, wherein the probe card is electrically connected to the electrode to be inspected. The second electrode sheet is
By laser processing a conductive elastomer layer containing magnetically conductive particles formed so as to close the opening of the support sheet so as to be aligned in the thickness direction, a plurality of particles are formed in the opening of the support sheet. By forming conductive path forming portions and forming an insulating portion material layer made of a polymer material forming material which is cured and becomes an elastic polymer substance between the conductive path forming portions, the inside of the opening of the support sheet is formed. A step of manufacturing a first intermediate formed with a plurality of conductive path forming portions and insulating portion material layers;
Forming a plurality of inspection core electrodes and a plurality of connection core electrodes on a metal film, and forming a polymer material that is cured between the inspection core electrodes and the connection core electrodes to become an elastic polymer material By forming the insulating part material layer made of a material, a second intermediate body in which a plurality of inspection core electrodes, a plurality of connecting core electrodes, and an insulating part material layer are formed on the metal film is manufactured. Process,
The second intermediate body is stacked on the first intermediate body so that each of the inspection core electrode and the connection core electrode corresponding to each of the conductive path forming portions is in contact with each other. 2. The wafer inspection according to claim 1, wherein the wafer inspection is obtained through a step of forming an insulating portion by curing the material layer for the insulating portion of each of the first intermediate body and the second intermediate body. Probe card. The probe card for wafer inspection according to claim 1 or claim 2 is provided,
A state in which measurement is possible by simultaneously electrically connecting the ring-shaped electrode of the first electrode sheet and the core electrode for inspection of the second electrode sheet in the electrical resistance measurement connector to each of the electrodes to be inspected on the wafer to be inspected And
In this measurable state, one of the inspection core electrode and the ring electrode electrically connected to one designated inspection electrode is used as a current supply electrode, and the other is used as a voltage measurement electrode. The wafer inspection apparatus is characterized in that the measurement of the electrical resistance relating to the designated one inspection target electrode is executed. The wafer inspection probe card according to claim 1 or 2 is disposed on a surface of a wafer to be inspected,
The ring-shaped electrode of the first electrode sheet and the core electrode for inspection of the second electrode sheet in the electrical resistance measurement connector of the wafer inspection probe card are simultaneously electrically connected to each of the electrodes to be inspected of the wafer. To enable measurement,
In this measurable state, one of the inspection core electrode and the ring electrode electrically connected to one designated inspection electrode is used as a current supply electrode, and the other is used as a voltage measurement electrode. The wafer inspection method is characterized in that the measurement of the electrical resistance of the designated one inspection target electrode is executed.

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