WO2006012784A1 - Circuit de polarisation a transistor a effet de champ - Google Patents
Circuit de polarisation a transistor a effet de champ Download PDFInfo
- Publication number
- WO2006012784A1 WO2006012784A1 PCT/CN2005/000516 CN2005000516W WO2006012784A1 WO 2006012784 A1 WO2006012784 A1 WO 2006012784A1 CN 2005000516 W CN2005000516 W CN 2005000516W WO 2006012784 A1 WO2006012784 A1 WO 2006012784A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- fet
- voltage
- circuit
- resistor
- bias circuit
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
- H03F3/16—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with field-effect devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
- H03F1/301—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in MOSFET amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/18—Indexing scheme relating to amplifiers the bias of the gate of a FET being controlled by a control signal
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/568,457 US7420420B2 (en) | 2004-08-02 | 2005-04-18 | FET bias circuit |
EP05745432A EP1777812B1 (en) | 2004-08-02 | 2005-04-18 | Fet bias circuit |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200410056160.4 | 2004-08-02 | ||
CN2004100561604A CN100407572C (zh) | 2004-08-02 | 2004-08-02 | 场效应管偏置电路 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2006012784A1 true WO2006012784A1 (fr) | 2006-02-09 |
Family
ID=35042143
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/CN2005/000516 WO2006012784A1 (fr) | 2004-08-02 | 2005-04-18 | Circuit de polarisation a transistor a effet de champ |
Country Status (4)
Country | Link |
---|---|
US (1) | US7420420B2 (zh) |
EP (1) | EP1777812B1 (zh) |
CN (1) | CN100407572C (zh) |
WO (1) | WO2006012784A1 (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102771047B (zh) * | 2010-02-25 | 2014-12-03 | 夏普株式会社 | 偏置电路、lna、lnb、通信用接收机、通信用发送机及传感器系统 |
CN103475312A (zh) * | 2013-09-10 | 2013-12-25 | 昆山新金福精密电子有限公司 | 一种信号源电路 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1219024A (zh) * | 1997-11-27 | 1999-06-09 | 日本电气株式会社 | 一种可补偿由环境温度变化所引起的失真的半导体电路 |
US6166591A (en) * | 1998-12-11 | 2000-12-26 | E.C.I. Telecom Ltd. | FET gate biasing control device for power amplifier |
CN1283327A (zh) * | 1997-12-22 | 2001-02-07 | 艾利森电话股份有限公司 | 低压晶体管的偏置 |
US20020009980A1 (en) * | 2000-05-12 | 2002-01-24 | Masayuki Katakura | Bias circuit and radio communication apparatus using same |
CN1346537A (zh) * | 1999-04-13 | 2002-04-24 | 艾利森电话股份有限公司 | 用于场效应晶体管的偏置装置 |
US20020135423A1 (en) | 2001-03-21 | 2002-09-26 | Kiichi Yamashita | Power amplifier module |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB8810750D0 (en) * | 1988-05-06 | 1988-06-08 | Salplex Ltd | Mosfet power switch arrangements |
CN2054231U (zh) * | 1989-06-28 | 1990-03-07 | 北京市西城新开通用试验厂 | 一种大功率数控调压与变流装置 |
US5757237A (en) * | 1996-08-28 | 1998-05-26 | Motorola, Inc. | Method for dynamically biasing an amplifier and circuit therefor |
DE19742954C1 (de) * | 1997-09-29 | 1999-02-25 | Fraunhofer Ges Forschung | Temperaturkompensationsschaltung für Feldeffekttransistor-Verstärkerschaltungen |
GB2334167B (en) * | 1998-02-07 | 2002-09-11 | Motorola Ltd | Amplifying circuit and method for determining optimal bias voltages therein |
DE19829031A1 (de) * | 1998-06-30 | 2000-01-05 | Thomson Brandt Gmbh | Kompensation von Bildrohralterungseffekten |
US6046642A (en) * | 1998-09-08 | 2000-04-04 | Motorola, Inc. | Amplifier with active bias compensation and method for adjusting quiescent current |
US6201444B1 (en) * | 1999-09-01 | 2001-03-13 | Spectrian Corporation | Current source bias circuit with hot carrier injection tracking |
JP3532834B2 (ja) * | 2000-06-27 | 2004-05-31 | 富士通カンタムデバイス株式会社 | 高周波増幅器バイアス回路、高周波電力増幅器および通信装置 |
US6753734B2 (en) * | 2001-06-06 | 2004-06-22 | Anadigics, Inc. | Multi-mode amplifier bias circuit |
CN100416962C (zh) * | 2001-12-31 | 2008-09-03 | 中兴通讯股份有限公司 | 一种过温保护电路 |
US6614309B1 (en) * | 2002-02-21 | 2003-09-02 | Ericsson Inc. | Dynamic bias controller for power amplifier circuits |
US6891438B2 (en) * | 2002-12-12 | 2005-05-10 | Northrop Grumman Corporation | Adaptive active bias compensation technique for power amplifiers |
US6956437B2 (en) * | 2003-12-23 | 2005-10-18 | Agere Systems Inc. | Metal-oxide-semiconductor device having integrated bias circuit |
-
2004
- 2004-08-02 CN CN2004100561604A patent/CN100407572C/zh not_active Expired - Fee Related
-
2005
- 2005-04-18 WO PCT/CN2005/000516 patent/WO2006012784A1/zh active Application Filing
- 2005-04-18 US US11/568,457 patent/US7420420B2/en not_active Expired - Fee Related
- 2005-04-18 EP EP05745432A patent/EP1777812B1/en not_active Not-in-force
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1219024A (zh) * | 1997-11-27 | 1999-06-09 | 日本电气株式会社 | 一种可补偿由环境温度变化所引起的失真的半导体电路 |
CN1283327A (zh) * | 1997-12-22 | 2001-02-07 | 艾利森电话股份有限公司 | 低压晶体管的偏置 |
US6166591A (en) * | 1998-12-11 | 2000-12-26 | E.C.I. Telecom Ltd. | FET gate biasing control device for power amplifier |
CN1346537A (zh) * | 1999-04-13 | 2002-04-24 | 艾利森电话股份有限公司 | 用于场效应晶体管的偏置装置 |
US20020009980A1 (en) * | 2000-05-12 | 2002-01-24 | Masayuki Katakura | Bias circuit and radio communication apparatus using same |
US20020135423A1 (en) | 2001-03-21 | 2002-09-26 | Kiichi Yamashita | Power amplifier module |
Also Published As
Publication number | Publication date |
---|---|
EP1777812B1 (en) | 2012-11-21 |
US7420420B2 (en) | 2008-09-02 |
US20070229153A1 (en) | 2007-10-04 |
EP1777812A4 (en) | 2007-08-29 |
CN1671042A (zh) | 2005-09-21 |
CN100407572C (zh) | 2008-07-30 |
EP1777812A1 (en) | 2007-04-25 |
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