WO2005103735A1 - Sonde en forme de feuille, procédé de fabrication de celle-ci et application de celle-ci - Google Patents

Sonde en forme de feuille, procédé de fabrication de celle-ci et application de celle-ci Download PDF

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Publication number
WO2005103735A1
WO2005103735A1 PCT/JP2005/007811 JP2005007811W WO2005103735A1 WO 2005103735 A1 WO2005103735 A1 WO 2005103735A1 JP 2005007811 W JP2005007811 W JP 2005007811W WO 2005103735 A1 WO2005103735 A1 WO 2005103735A1
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WIPO (PCT)
Prior art keywords
electrode
insulating film
sheet
probe
film
Prior art date
Application number
PCT/JP2005/007811
Other languages
English (en)
Japanese (ja)
Inventor
Katsumi Sato
Kazuo Inoue
Mutsuhiko Yoshioka
Hitoshi Fujiyama
Hisao Igarashi
Original Assignee
Jsr Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jsr Corporation filed Critical Jsr Corporation
Publication of WO2005103735A1 publication Critical patent/WO2005103735A1/fr

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/073—Multiple probes
    • G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
    • G01R1/07314—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card the body of the probe being perpendicular to test object, e.g. bed of nails or probe with bump contacts on a rigid support
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/073—Multiple probes
    • G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
    • G01R1/0735—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card arranged on a flexible frame or film
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R3/00—Apparatus or processes specially adapted for the manufacture or maintenance of measuring instruments, e.g. of probe tips

Definitions

  • Sheet-shaped probe Method of manufacturing the same, and application thereof
  • the present invention relates to a sheet-like probe for making an electrical connection to a circuit such as an integrated circuit in an electrical inspection of the circuit, for example, a method of manufacturing the same, and an application thereof.
  • the circuit is arranged according to a pattern corresponding to a pattern of an electrode to be inspected of the circuit device to be inspected.
  • a probe card having a large number of test electrodes is used.
  • a probe card in which detection electrodes formed of pins or blades are arranged is used.
  • the circuit device to be inspected is a wafer on which a large number of integrated circuits are formed, it is necessary to arrange a very large number of inspection electrodes when manufacturing a probe card for inspecting the wafer. Therefore, the probe card becomes extremely expensive. If the wafer to be inspected has a large number of electrodes to be inspected arranged at a small pitch, it becomes difficult to fabricate the probe card itself. Furthermore, since the wafer is generally warped, and the state of the warp is different for each product (e.g., wafer), a large number of electrodes to be inspected on the wafer are required for each of the inspection electrodes of the probe card. It is practically difficult to make stable and reliable contact.
  • a probe card for inspecting an integrated circuit formed on a wafer As a probe card for inspecting an integrated circuit formed on a wafer, a probe card having a plurality of inspection electrodes formed on one surface in accordance with a pattern corresponding to a pattern of an electrode to be inspected has been developed.
  • a device comprising a sheet-like probe in which electrode structures are arranged has been proposed (for example, see Patent Document 1).
  • FIG. 39 does not include an inspection circuit board, an anisotropic conductive sheet, and a sheet probe.
  • FIG. 5 is an explanatory cross-sectional view illustrating a configuration of an example of a conventional probe card.
  • an inspection circuit board 85 having a large number of inspection electrodes 86 formed on one surface in accordance with a pattern corresponding to an electrode to be inspected of a circuit device to be inspected is provided.
  • a sheet-like probe 90 is arranged on one side of the substrate via an anisotropic conductive sheet 80.
  • the anisotropic conductive sheet 80 has conductivity only in the thickness direction, or has a pressurized conductive portion that has conductivity only in the thickness direction when pressed in the thickness direction.
  • Various structures are known as a strong anisotropic conductive sheet.
  • Patent Document 2 and the like disclose an anisotropic conductive sheet obtained by uniformly dispersing metal particles in an elastomer. (Hereinafter, referred to as a “dispersed anisotropic conductive sheet”), and Patent Document 3 and the like disclose a method of dispersing conductive magnetic particles non-uniformly in an elastomer to obtain a thickness.
  • An anisotropic conductive sheet (hereinafter, referred to as a “distributed anisotropic conductive sheet”) in which a large number of conductive portions extending in a direction and insulating portions for insulating the conductive portions from each other are formed.
  • Patent Document 4 and the like disclose a step between the surface of the conductive portion and the insulating portion.
  • An unevenly distributed anisotropic conductive sheet in which a difference is formed is disclosed.
  • the sheet-like probe 90 has a flexible insulating film 91 made of, for example, resin, and a plurality of electrode structures 95 extending in the thickness direction of the insulating film 91 are provided with electrodes to be inspected of a circuit device to be inspected. It is arranged and configured according to the pattern corresponding to the above pattern.
  • a protruding front surface electrode portion 96 exposed on the surface of the insulating film 91 and a plate-shaped rear surface electrode portion 97 exposed on the back surface of the insulating film 91 form the insulating film 91 with its thickness. They are integrally connected via a short-circuit portion 98 extending through the direction.
  • Such a sheet probe 90 is generally manufactured as follows.
  • a laminated body 90A having a metal layer 92 formed on one surface of an insulating film 91 is prepared, and as shown in FIG. A through-hole 98H penetrating through is formed.
  • a resist film 93 is formed on the metal layer 92 of the insulating film 91, and an electrolytic plating process is performed using the metal layer 92 as a common electrode, thereby forming the insulating film 91.
  • a metal deposit is filled in the through-hole 98H and is connected to the metal layer 92 as a single piece.
  • a protruding surface electrode portion 96 integrally connected to the short-circuit portion 98 is formed on the surface of the insulating film 91.
  • the resist film 93 is removed from the metal layer 92, and a resist film 94A is formed on the surface of the insulating film 91 including the surface electrode portion 96, as shown in FIG.
  • a resist film 94B is formed in accordance with a pattern corresponding to the pattern of the back electrode portion to be formed, and the metal layer 92 is subjected to an etching process, as shown in FIG. The exposed portion of is removed to form the back electrode portion 97, thereby forming the electrode structure 95.
  • the sheet probe 90 is obtained.
  • the surface electrode section 96 of the electrode structure 95 of the sheet-like probe 90 is arranged on the surface of the circuit device to be inspected, for example, the wafer, so as to be located on the electrode to be inspected of the wafer.
  • the anisotropic conductive sheet 80 is pressed by the back surface electrode portion 97 of the electrode structure 95 in the sheet-like probe 90.
  • a conductive path is formed in the thickness direction between the back electrode portion 97 and the test electrode 86 of the test circuit board 85, and as a result, the test electrode of the wafer and the test circuit board 85 are tested. An electrical connection with electrode 86 is achieved. Then, in this state, a required electrical inspection is performed on the wafer.
  • the anisotropic conductive sheet is deformed in accordance with the degree of warpage of the wafer, so that a large number of electrodes to be inspected on the wafer are formed. A good electrical connection can be reliably achieved for each of the two.
  • the sheet-like probe in the above probe card has the following problems.
  • FIG. As shown, in the obtained surface electrode portion 96, the distance w from the periphery of the surface electrode portion 96 to the periphery of the short-circuit portion 98 is equal to the protrusion height h of the surface electrode portion 96. . Accordingly, the diameter R of the obtained surface electrode portion 96 is considerably larger than twice the protruding height h.
  • the electrodes to be inspected in the circuit device to be inspected are arranged at a very small and extremely small pitch, it is not possible to secure a sufficient separation distance between the adjacent electrode structures 95. As a result, in the obtained sheet probe, the flexibility of the insulating film 91 is lost, so that it is difficult to achieve stable electrical connection to the circuit device under test.
  • means for reducing the diameter of the obtained surface electrode portion 96 include means for reducing the protruding height h of the surface electrode portion 96, and the diameter of the short-circuit portion 98 (when the cross-sectional shape is not circular). Indicates the shortest length.)
  • a method of reducing r that is, reducing the diameter of the through-hole 98H of the insulating film 91 can be considered, but the sheet-like probe obtained by the former method has a
  • the latter means makes it difficult to form the short-circuit portion 98 and the surface electrode portion 96 by electrolytic plating.
  • Patent Document 5 In order to solve such a problem, in Patent Document 5 and Patent Document 6, a large number of electrode structures each having a tapered surface electrode portion having a smaller diameter toward the distal end are arranged. A sheet-like probe has been proposed.
  • the resist film 93A and the surface side metal layer 92 are formed on the surface of the insulating film 91.
  • a force S A laminate 90B is formed in this order, in which a back surface side metal layer 92B is laminated on the back surface of the insulating film 91, and as shown in FIG. 42 (b), the back surface of the laminate 90B is prepared.
  • An electrode structure forming recess 90K having a tapered shape adapted to the surface electrode portion is formed.
  • the surface-side metal layer 92A in the laminated body 90B is subjected to a plating process as an electrode, so that the electrode structure forming recess 9OK is filled with metal and the surface electrode portion 96 And a short circuit 98 is formed. Then, by etching the backside metal layer of the laminate and removing a part thereof, a backside electrode portion 97 is formed as shown in FIG. 42 (d), thereby obtaining a sheet probe.
  • a plating process as an electrode
  • a front-side metal layer 92A is formed on the surface of an insulating film material 91A having a thickness larger than the insulating film in the sheet-like probe to be formed, and is formed on the back surface of the insulating film material 91A.
  • a laminated body 90C formed by laminating the back side metal layer 92B is prepared, and as shown in FIG. 43 (b), communicates with each of the back side metal layer 92B and the insulating film material 91A in the laminated body 90C.
  • Form 90K a metal is filled into the electrode structure forming recess 90K by performing a plating process using the surface-side metal layer 92A of the laminated body 90C as an electrode. 96 and short circuit 98 are formed. Thereafter, by removing the surface-side metal layer 92A of the laminate 90C and etching the insulating film material 91A to remove the surface-side portion of the insulating film, as shown in FIG.
  • An insulating film 91 having a thickness of 3 mm is formed, and the surface electrode section 96 is exposed. Then, by etching the back side metal layer 92B, as shown in FIG. 43 (e), a back side electrode portion 97 is formed, whereby a sheet probe is obtained.
  • the surface electrode portion has a tapered shape, the surface electrode portion having a small diameter S and a high protruding height is connected to the surface electrode portion of the adjacent electrode structure. Can be formed in a state where the distance between the electrodes is sufficiently secured, and the electrode structure can be formed. Since each of the surface electrode portions is formed with the cavity for forming the electrode structure formed in the laminate as a cavity, an electrode structure with a small variation in the protruding height of the surface electrode portion can be obtained.
  • the diameter of the surface electrode portion of the electrode structure is equal to or smaller than the diameter of the short-circuit portion, that is, the diameter of the through hole formed in the insulating film. Is dropped from the back surface of the insulating film, and it is difficult to actually use the sheet-like probe.
  • the sheet-like probe in the conventional probe card has the following problem.
  • a sheet probe for such a wafer inspection has a large area corresponding to the wafer and has 5000 or 10,000 or more electrode structures arranged at a pitch of 160 ⁇ m or less. It is necessary to use the one that is.
  • the linear thermal expansion coefficient of the material for example silicon constituting the wafer 3. a 3 X 10- 6 ZK extent
  • the linear thermal expansion coefficient of the material such as polyimide for the insulating film in the sheet-like probe 4. is about 5 ⁇ 10- 5 ⁇ . Therefore, if, for example, a wafer and a sheet probe each having a diameter of 30 cm at 25 ° C are heated to 120 ° C from a force of 20 ° C, the change in wafer diameter is theoretically 99%. Although it is only / zm, the change in the diameter of the insulating film in the sheet probe reaches 1350 m, and the difference in thermal expansion between the two is 1251 / zm.
  • the peripheral portion of the insulating film has a linear thermal expansion coefficient equal to the linear thermal expansion coefficient of the wafer. Even if it is fixed by a support member having an expansion coefficient, it is difficult to reliably prevent the electrode structure from being displaced from the electrode to be inspected due to a temperature change in the burn-in test. I can't keep it stable! / ,.
  • the inspection target is a small circuit device, if the pitch of the electrode to be inspected is 50 m or less, the electrode structure due to temperature change in the burn-in test It is difficult to reliably prevent displacement between the electrode and the electrode to be inspected, so that a good electrical connection state cannot be stably maintained.
  • Patent Document 7 proposes means for reducing thermal expansion of the insulating film by fixing the insulating film to a holding member while applying tension to the insulating film. ing.
  • Patent Document 1 Japanese Patent Application Laid-Open No. 7-231019
  • Patent Document 2 JP-A-51-93393
  • Patent Document 3 JP-A-53-147772
  • Patent Document 4 JP-A-61-250906
  • Patent Document 5 JP-A-11-326378
  • Patent Document 6 JP-A-2002-196018
  • Patent Document 7 Japanese Patent Application Laid-Open No. 2001-15565
  • the present invention has been made based on the above-described circumstances, and a first object of the present invention is to form an electrode structure having a small diameter and a surface electrode portion. ,small! ⁇ A stable electrical connection state can be reliably achieved even for circuit devices with electrodes formed at a pitch, and high durability is obtained without the electrode structure falling off the insulating film. Furthermore, even if the inspection target is a large-area wafer with a diameter of 8 inches or more or a circuit device with a very small pitch of the electrode to be inspected, the electrode structure and the inspected electrode due to temperature change in the burn-in test It is therefore an object of the present invention to provide a sheet-like probe which can surely prevent a displacement with respect to an electrode and can stably maintain a good electrical connection state.
  • a second object of the present invention is to provide an electrode structure having a surface electrode portion having a small diameter and a small variation in a protruding height, and to a circuit device in which electrodes are formed at a small pitch. In this way, a stable electrical connection state can be reliably achieved, and the electrode structure has high durability without the electrode structure falling off from the insulating film. In a burn-in test, it is possible to reliably prevent the electrode structure from being displaced from the electrode to be inspected due to a temperature change even in a wafer having a large area of an inch or more or a circuit device having an extremely small pitch between the electrodes to be inspected.
  • a third object of the present invention is to provide a probe card provided with the above-mentioned sheet-like probe.
  • a fourth object of the present invention is to provide a circuit device inspection device and a wafer inspection device provided with the above-described probe card.
  • a plurality of electrode structures extending through the insulating film made of a flexible resin in the thickness direction of the insulating film according to the pattern corresponding to the electrode to be connected, respectively.
  • a contact film arranged and a supporting film made of a metal supporting the contact film Comprising a contact film arranged and a supporting film made of a metal supporting the contact film,
  • Each of the electrode structures is exposed on the surface of the insulating film and protrudes from the surface of the insulating film, a back electrode portion exposed on the back surface of the insulating film, and a base of the surface electrode portion.
  • the insulating film extends continuously from the end in the thickness direction thereof and extends along the surface of the insulating film continuously from the short-circuit portion connected to the back electrode portion and the base end portion of the front electrode portion. And a holding portion extending outward.
  • the sheet-like probe of the present invention is a sheet-like probe used for an electrical inspection of a circuit device
  • the contact film is made of an insulating film made of a flexible resin, and the insulating film is A plurality of electrode structures arranged in accordance with the pattern corresponding to the turn and extending through the thickness direction of the insulating film, and each of the electrode structures is located in each opening of the support film. It is arranged as
  • Each of the electrode structures is exposed on the surface of the insulating film and protrudes from the surface of the insulating film, a back electrode portion exposed on the back surface of the insulating film, and a base of the surface electrode portion.
  • the insulating film extends continuously from the end in the thickness direction thereof and extends along the surface of the insulating film continuously from the short-circuit portion connected to the back electrode portion and the base end portion of the front electrode portion. And a holding portion extending outward.
  • a plurality of contact films independent of each other may be arranged along the surface of the support film.
  • the sheet-like probe of the present invention is a sheet-like probe used for an electrical inspection of a circuit device
  • Each of the contact films is an insulating film made of a flexible resin, and is disposed on the insulating film according to a pattern corresponding to a pattern of an electrode to be inspected in an electrode region of the circuit device. And a plurality of electrode structures that are arranged so that each of the electrode structures is located in each of the openings of the support film.
  • a short-circuit portion that extends through and is connected to the back electrode portion; and a holding portion that extends outward from the base end portion of the front electrode portion along the surface of the insulating film.
  • the sheet-like probe of the present invention can be suitably used for performing an electrical inspection of each integrated circuit formed on a wafer in a state of the wafer.
  • the surface electrode portion of the electrode structure Proximal force It is preferable that the shape be such that the diameter becomes smaller toward the distal end.
  • the tip of the surface electrode portion with respect to the diameter R of the base end of the surface electrode portion in the electrode structure.
  • the value of the ratio R / R of the diameter R be 0.11 to 0.55.
  • the value of the ratio hZR of the height h is 0.2 to 3.
  • the short-circuit portion in the electrode structure has a shape having a smaller diameter toward the rear surface of the insulating film.
  • the insulating film is preferably made of an etchable polymer material, and is particularly preferably made of polyimide.
  • the coefficient of linear thermal expansion of the support film is preferably 3 ⁇ 10—so K or less.
  • the method for producing a sheet-like probe of the present invention is a method for producing the above-mentioned sheet-like probe
  • a through hole is formed on the back surface of the laminate.
  • Each of the electrode structure forming recesses is filled with metal by performing a plating process using the plating electrode layer in the laminate as an electrode, thereby forming a surface electrode portion projecting from the surface of the insulating film and a base of the surface electrode portion. Forming a short-circuit portion extending continuously through the insulating film in the thickness direction thereof, and a back-electrode portion connected to the short-circuit portion and exposed on the back surface of the insulating film;
  • a support film having an opening formed therein is formed,
  • the laminated body force exposes the surface electrode portion and the holding portion forming layer, and then performs an etching process on the holding portion forming layer.
  • a step of forming a holding portion extending outward along the surface of the insulating film continuously with the base partial force of the surface electrode portion is provided.
  • the through hole of the holding part forming layer in the electrode structure forming recess has a smaller diameter as it goes toward the back surface of the holding part forming layer. It is preferable to be formed in the shape which becomes.
  • the holding portion forming layer is made of a polymer material which can be etched as the laminate, and the through hole of the holding portion forming layer in the electrode structure forming recess is formed by etching. Better ,.
  • the through-hole of the insulating film in the recess for forming an electrode structure is formed in such a shape that the back surface force of the insulating film becomes smaller in diameter toward the surface.
  • the laminated body is made of a polymer material whose insulating film can be etched, and the through-hole of the insulating film in the electrode structure forming recess is formed by etching.
  • a probe card of the present invention includes the above-mentioned sheet-like probe.
  • a probe card according to the present invention includes a sheet-like probe manufactured by the above method.
  • the probe card of the present invention is a probe card used for performing an electrical inspection of each of a plurality of integrated circuits formed on a wafer in a state of the wafer. So,
  • An inspection circuit board having inspection electrodes formed on the surface thereof in accordance with a pattern corresponding to the pattern of the electrodes to be inspected of all or some of the integrated circuits formed on the wafer to be inspected, and on the surface of the inspection circuit board Characterized in that it comprises an anisotropically conductive connector arranged on the substrate and the above-mentioned sheet-like probe arranged on the anisotropically conductive connector.
  • the probe card of the present invention can be applied to each of a plurality of integrated circuits formed on a wafer.
  • An inspection circuit board having inspection electrodes formed on the surface thereof in accordance with a pattern corresponding to the pattern of the electrodes to be inspected of all or some of the integrated circuits formed on the wafer to be inspected, and on the surface of the inspection circuit board Characterized by comprising an anisotropically conductive connector arranged in the above manner, and a sheet-like probe produced by the above-mentioned method, arranged on the anisotropically conductive connector.
  • a circuit device inspection apparatus includes the above-described probe card.
  • a wafer inspection device of the present invention is a wafer inspection device that performs an electrical inspection of each of a plurality of integrated circuits formed on a wafer in a state of the wafer, wherein the probe card It is characterized by being equipped.
  • the electrode structure is formed with the holding portion extending outward from the base end portion of the surface electrode portion continuously along the surface of the insulating film. Even if the diameter of the surface electrode portion is small, the electrode structure does not fall off the insulating film, and high durability can be obtained.
  • the burn-in test is performed. ! In addition, it is possible to reliably prevent the electrode structure from being displaced from the electrode to be inspected due to a temperature change, and to stably maintain a good electrical connection state.
  • the electrode structure forming recess is formed in advance in the laminate having the insulating film, and the electrode structure forming recess is used as a cavity to form the surface electrode portion.
  • the electrode structure forming recess is used as a cavity to form the surface electrode portion.
  • the holding portion forming layer formed on the surface of the insulating film is continuously formed at the base end of the surface electrode portion. Therefore, even if the diameter of the surface electrode portion is small, the electrode structure does not fall off the insulating film and a sheet-like probe having high durability can be manufactured. .
  • the burn-in can be performed.
  • a displacement of the electrode structure and the electrode to be inspected due to a temperature change is reliably prevented, and therefore, a sheet-like probe in which a good electrical connection state is stably maintained can be manufactured.
  • the probe card of the present invention since the probe card is provided with the above-mentioned sheet-shaped probe, it is possible to reliably achieve a stable electric connection state even to a circuit device having electrodes formed at a small pitch. Since the electrode structure of the sheet-shaped probe does not fall off, high durability is obtained, and the inspection target is a large area wafer with a diameter of 8 inches or more. Even in a circuit device having a very small value, a good electrical connection state can be stably maintained in the burn-in test.
  • the probe device inspection device and the wafer inspection device of the present invention since the probe device is provided with the above-described probe force, a stable electrical connection state is ensured even for a circuit device having electrodes formed at a small pitch. In addition, even when a large number of circuit devices are tested, a highly reliable test can be performed over a long period of time.
  • FIG. 1 is a plan view showing a first example of a sheet-like probe according to the present invention.
  • FIG. 2 is an enlarged plan view showing a part of a contact film in the sheet-like probe of the first example.
  • FIG. 3 is an explanatory cross-sectional view showing a part of a contact film in the sheet-like probe of the first example in an enlarged manner.
  • FIG. 4 is an explanatory cutaway showing a configuration of a laminate for manufacturing the sheet-like probe of the first example.
  • FIG. 5 is an explanatory cross-sectional view showing a state where resist films for etching are formed on both surfaces of the laminate shown in FIG. 4.
  • FIG. 6 is an explanatory cross-sectional view showing a state in which a through-hole is formed in a support film forming layer in the laminate.
  • FIG. 9 is an explanatory cross-sectional view showing a state in which a through hole is formed in an electrode portion forming layer of the laminate to form an electrode structure forming recess.
  • FIG. 10 is an explanatory cross-sectional view showing a state where a resist film for plating is formed on both surfaces of a laminate in which a recess for forming an electrode structure is formed.
  • FIG. 11 is an explanatory cross-sectional view showing a state in which a metal is filled in a recess for forming an electrode structure to form a surface electrode portion and a short-circuit portion.
  • FIG. 12 is an explanatory cross-sectional view showing a state where the resist film on the back surface of the support film forming layer has been removed.
  • FIG. 13 is an explanatory cross-sectional view showing a state where an etching resist film is formed on the back surface of the support film forming layer.
  • FIG. 14 is an explanatory cross-sectional view showing a state in which the resist film has been removed from the surface force of the plating electrode layer.
  • FIG. 15 is an explanatory cross-sectional view showing a state where a part of the support film forming layer is removed to form a plurality of back electrode portions separated from each other and the support film is formed.
  • FIG. 16 is an explanatory cross-sectional view showing a state where a resist film is formed so as to cover the back surface of the support film, the back surface of the insulating film, and the back electrode portion.
  • FIG. 17 is also an explanatory cross-sectional view showing a state in which the electrode body forming layer is removed from the laminate body force.
  • FIG. 18 is an explanatory cross-sectional view showing a state where a resist film is formed so as to cover a part of the surface electrode portion and the holding film forming layer.
  • FIG. 19 is an explanatory cross-sectional view showing a state in which the holding portion forming layer is etched to form the holding portion.
  • FIG. 20 is a plan view showing a second example of the sheet probe according to the present invention.
  • FIG. 21 is an enlarged plan view showing a part of a contact film in the sheet-like probe of the second example.
  • FIG. 22 is an explanatory cross-sectional view showing a part of a contact film in the sheet-like probe of the second example in an enlarged manner.
  • FIG. 23 is an explanatory cross-sectional view showing a state where a resist film is formed to cover a part of the insulating film, the surface electrode portion, and the holding portion.
  • FIG. 24 is an explanatory cross-sectional view showing a state in which a part of the insulating film is removed to form a plurality of divided insulating films.
  • FIG. 25 is a plan view showing a third example of the sheet-like probe according to the present invention.
  • FIG. 26 is an enlarged plan view showing a part of the contact film in the sheet-like probe of the third example.
  • FIG. 27 is an explanatory cross-sectional view showing a part of a contact film in a sheet-like probe of a third example in an enlarged manner.
  • FIG. 28 is an explanatory cross-sectional view showing a state where a resist film is formed to cover a part of the insulating film, the surface electrode portion, and the holding portion.
  • FIG. 29 is an explanatory cross-sectional view showing a state in which a part of the insulating film is removed to form a plurality of divided insulating films.
  • FIG. 30 is an explanatory sectional view showing a configuration of an example of a circuit device inspection device according to the present invention.
  • FIG. 31 is an explanatory sectional view showing a probe card in the inspection device shown in FIG. 30 in an enlarged manner.
  • FIG. 32 is a plan view of an anisotropic conductive connector in a probe card.
  • FIG. 33 is a plan view showing another example of the sheet-like probe according to the present invention.
  • FIG. 34 is a plan view showing the test wafer manufactured in the example.
  • FIG. 35 shows the position of the electrode area to be inspected of the integrated circuit formed on the test wafer shown in FIG. FIG.
  • FIG. 36 is an explanatory diagram showing an arrangement pattern of electrodes to be inspected of the integrated circuit formed on the test wafer shown in FIG.
  • FIG. 37 is a plan view showing a frame plate of the anisotropic conductive connector manufactured in the example.
  • FIG. 38 is an explanatory view showing a part of the frame plate shown in FIG. 37 in an enlarged manner.
  • FIG. 39 is an explanatory cross-sectional view showing a configuration of an example of a conventional probe card.
  • Fig. 40 is an explanatory cross-sectional view showing a production example of a conventional sheet-like probe.
  • FIG. 41 is an explanatory cross-sectional view showing, on an enlarged scale, a sheet-like probe in the probe card shown in FIG. 39.
  • FIG. 42 is an explanatory cross-sectional view showing another example of manufacturing a conventional sheet-like probe.
  • FIG. 43 is an explanatory cross-sectional view showing still another example of manufacturing a conventional sheet-like probe. Explanation of symbols
  • FIG. 1 is a partially cutaway plan view showing a first example of a sheet-like probe according to the present invention
  • FIG. 2 is an enlarged plan view showing a contact film in the sheet-like probe of the first example
  • FIGS. 3 and 3 are enlarged cross-sectional views illustrating a contact film in the sheet-like probe of the first example.
  • the sheet-like probe 10 of the first example is used, for example, for a wafer on which a plurality of integrated circuits are formed, for performing an electrical inspection of each of the integrated circuits in a wafer state, It has a support film 11 made of metal in which a plurality of openings 11H are formed.
  • the opening 11H of the support film 11 is provided for the electrode to be inspected of the integrated circuit on the wafer to be inspected. Are formed corresponding to the pattern of the electrode region in which is formed. Further, in the support film 11 in this example, a positioning hole 11K for positioning the anisotropic conductive connector and the inspection circuit board in the probe card described later is formed.
  • Iron, copper, nickel, titanium, or an alloy or alloy steel thereof can be used as a metal constituting the support film 11, but in the manufacturing method described later, the opening 11H can be easily formed by etching. Iron-nickel alloy steels such as alloy 42, invar and kovar are preferred because they can be formed! /.
  • the material forming the support film 11 include an alloy such as an Invar alloy such as Invar, an Elinvar alloy such as Elinvar, an alloy such as Super Invar, Kovar, and 42 alloy, or an alloy steel.
  • the thickness of the support film 11 is preferably 3 to: LOO m, and more preferably 5 to 50 ⁇ m.
  • the thickness is less than 3 ⁇ m, the strength required as a supporting film for supporting the contact film 12 may not be obtained. On the other hand, when the thickness exceeds 100 m, it may be difficult to easily form the opening 11H by etching in a manufacturing method described later.
  • the contact film 12 has a flexible insulating film 13 on which a plurality of electrode structures 15 extending in the thickness direction of the insulating film 13 are all formed on a wafer to be inspected.
  • the insulating film 13 is disposed apart from each other in the surface direction of the insulating film 13, and the contact film 12 is formed of the 1S support film 11 of each of the electrode structures 15. It is arranged to be located in each opening 11H.
  • Each of the electrode structures 15 is exposed on the surface of the insulating film 13 and has a protruding surface electrode portion 16 protruding from the surface of the insulating film 13, and a rectangular flat plate exposed on the back surface of the insulating film 13.
  • the base force of the back electrode section 17 and the front electrode section 16 also extends continuously through the insulating film 13 in the thickness direction thereof and is connected to the back electrode section 17, and the short circuit section 18 and the front electrode section 16 Peripheral surface force at base end portion
  • the support portion is constituted by a circular ring-plate-shaped holding portion 19 that continuously extends radially outward along the surface of the insulating film 13.
  • the surface electrode portion 16 is formed in a tapered shape having a smaller diameter as the base force is directed toward the distal end following the short-circuit portion 18 and is formed in a truncated cone shape as a whole.
  • the short-circuit portion 18 continuous to the base end of the front electrode portion 16 is tapered so that the diameter decreases toward the rear surface of the insulating film 13 and is formed in a truncated cone as a whole.
  • the end diameter R is
  • the insulating film 13 is not particularly limited as long as it is flexible and has insulating properties.
  • a resin sheet or fiber made of polyimide resin, liquid crystal polymer, polyester, fluorine resin, or the like is knitted. It is possible to use a sheet or the like impregnated with the above resin for the cloth.Because the through hole for forming the short-circuit portion 18 can be easily formed by etching, it must be made of an etchable material. Particularly preferred is polyimide.
  • the thickness d of the insulating film 13 is not particularly limited as long as the insulating film 13 is flexible, but is preferably 10 to 50 m, more preferably 10 to 25 / ⁇ . .
  • the electrode structure 15 nickel, copper, gold, silver, palladium, iron, or the like can be used.
  • the electrode structure 15 is entirely made of a single metal. Alternatively, it may be one made of an alloy of two or more metals or one made by laminating two or more metals.
  • gold, silver, and noradium are used in order to prevent oxidation of the electrode portion and obtain an electrode portion having low contact resistance.
  • a chemically stable metal film having high conductivity may be formed.
  • the front end of the surface electrode portion 16 with respect to the diameter R at the base end is located.
  • the ratio of the diameter R (R / R) is preferably 0.11-0.55, more preferably 0.1
  • the diameter R of the base end of the surface electrode portion 16 is 30 to 70% of the pitch of the electrode structure 15.
  • the ratio hZR of the protruding height h to the diameter R at the base end of the surface electrode portion 16 is 0.2
  • the electrode structure 15 having a pattern corresponding to the pattern of the electrode to be inspected is formed. It can be easily formed, and a stable electrical connection state to the wafer can be obtained more reliably.
  • the diameter R of the base end of the surface electrode section 16 depends on the above-mentioned conditions and the power to be inspected of the wafer to be inspected.
  • Force set in consideration of the diameter of the pole and the like is, for example, 30 to 80 / ⁇ , and preferably 30 to 50 ⁇ m.
  • the height of the protruding height h of the surface electrode portion 16 is preferably 15 to 50 m from the viewpoint that stable electrical connection can be achieved to the electrode to be inspected of the wafer to be inspected, More preferably, it is 15 to 30 ⁇ m.
  • the outer diameter R of the back electrode portion 17 is equal to that of the short-circuit portion 18 connected to the back electrode portion 17.
  • This is preferably as large as possible, so that a stable electrical connection can be reliably achieved, for example, even for an anisotropic conductive sheet.
  • the thickness D of the back electrode portion 17 is such that the strength is sufficiently high and excellent repetition durability is obtained.
  • the distance is preferably 10 to 40 m, more preferably 15 to 35 m.
  • the ratio R / R of the diameter R of one end to the diameter R of the other end of the short-circuit portion 18 is 0.45-1.
  • the diameter R of one end of the short-circuit portion 18 is 30 to 70% of the pitch of the electrode structure 15.
  • the diameter R of the holding portion 19 may be 30 to 70% of the pitch of the electrode structure 15.
  • the thickness D of the holding portion 19 is preferably 3 to 12 / zm, more preferably 5 to 9 / zm. ⁇ m.
  • the electrode structure 15 in the contact film 12 also has the base partial force of the surface electrode portion 16 continuously along the surface of the insulating film 11. Since the holding portion 19 extending outward is formed, even if the front surface electrode portion 16 has a small diameter, the electrode structure 16 does not lose the back surface force of the insulating film 13 and has high durability. Is obtained.
  • a plurality of openings 11H are formed in the support film 11 corresponding to the electrode regions where the electrodes to be inspected of the wafer to be inspected are formed.
  • the contact film 12 is arranged so that each of the contact films is located in each opening 11H of the support film 11, and the contact film 12 is supported by the support film 11 over the entire surface. Even if the insulating film 13 has a large area, the thermal expansion in the plane direction of the insulating film 13 can be reliably restricted by the support film 11. Therefore, even if the wafer to be inspected has a large area of, for example, 8 inches or more in diameter and the pitch of the electrodes to be inspected is extremely small, the burn-in test is performed! In addition, it is possible to reliably prevent the displacement between the electrode structure 15 and the electrode to be inspected due to a temperature change, and as a result, it is possible to stably maintain a good electrical connection state to the wafer.
  • the sheet-like probe 10 of the first example described above can be manufactured, for example, as follows.
  • FIG. 4 a circular support film forming layer 11A made of metal and a diameter of the support film forming layer 11A integrally laminated on the surface of the support film forming layer 11A are shown.
  • a circular insulating film 13 having a small diameter, a holding portion forming layer 19A made of metal integrally laminated on the surface of the insulating film 13, and an integral portion on the surface of the holding portion forming layer 19A.
  • a laminated body 10A having a laminated insulating electrode portion forming layer 16B and a plating electrode layer 16A integrally laminated on the surface of the electrode portion forming layer 16B is produced.
  • a protective tape 11T is provided on the surface of the support film forming layer 11A along the periphery thereof.
  • the holding portion forming layer 19A has a thickness equivalent to the thickness of the holding portion 19 in the electrode structure 15 to be formed.
  • the total thickness of the electrode portion forming layer 16B and the thickness of the holding portion forming layer 19A is such that the total thickness of the electrode portion forming layer 16B and the thickness of the holding portion forming layer 19A protrudes from the surface electrode portion 16 in the electrode structure 15 to be formed. It is assumed to be equivalent to height.
  • the support film forming layer 11A has a thickness equivalent to the thickness of the support film 11 to be formed.
  • the insulating film 13 As a material constituting the insulating film 13, it is preferable to use a polymer material which can be etched, and more preferably, polyimide.
  • the insulating material constituting the electrode portion forming layer 16B it is preferable to use an etchable high molecular material, and more preferably, polyimide.
  • a resist film 14A for etching is formed on the entire surface of the plating electrode layer 16A on the laminated body 10A, and on the back surface of the support film forming layer 11A, as shown in FIG. Then, an etching resist film 14B in which a plurality of pattern holes K1 are formed is formed in accordance with a pattern corresponding to the pattern of the electrode structure 15 to be formed.
  • the material for forming the resist films 14A and 14B various materials used as a photoresist for etching can be used.
  • the portion of the support film forming layer 11A exposed through the pattern hole K1 of the resist film 14B is subjected to an etching treatment to remove the portion, whereby the support film is formed as shown in FIG.
  • a plurality of through holes 17H communicating with the pattern holes K1 of the resist film 14B are formed in the film forming layer 11A.
  • a portion of the insulating film 13 exposed through each of the pattern holes K1 of the resist film 14B and each of the through holes 17H of the support film forming layer 11A is subjected to a etching process to remove the portions. As shown in FIG.
  • the insulating film 13 has a plurality of tapered through holes which communicate with the through holes 17H of the support film forming layer 11A, and the back surface of the insulating film 13 also has a smaller diameter according to the direction of the front surface. 13H is formed. Thereafter, the portions exposed through the respective pattern holes Kl of the resist film 14B, the respective through holes 17H of the support film forming layer 11A, and the respective through holes 13H of the insulating film 13 with respect to the holding portion forming layer 19A. As shown in FIG. 8, a plurality of through-holes 19H communicating with the through-holes 13H of the insulating film 13 are formed in the holding portion forming layer 19A by removing the portions by performing an etching process. Is done.
  • each pattern hole Kl of the resist film 14B, each through hole 17 ⁇ of the support film forming layer 11A, each through hole 13H of the insulating film 13, and each through hole of the holding portion forming layer 19A By etching the portion exposed through the hole 19H and removing the portion, as shown in FIG. 9, the through hole of the holding portion forming layer 19 # is formed in the electrode portion forming layer 16B as shown in FIG. A plurality of tapered through holes 16H communicating with 19H and having a smaller diameter as going from the back surface to the front surface of the electrode forming layer 16B are formed.
  • the through holes 17H of the support film forming layer 11A, the through holes 13H of the insulating film 13, the through holes 19H of the holding portion forming layer 19A, and the electrode portion forming layer 16B are formed on the back surface of the laminate 10A.
  • a plurality of electrode structure forming recesses 10K formed by communicating the through holes 16H are formed.
  • the etching agent for etching the support film forming layer 11A and the holding portion forming layer is appropriately selected according to the material constituting these metal layers.
  • the metal layer is made of, for example, 42 alloy or copper, an aqueous ferric chloride solution or the like can be used.
  • etching solution for etching the insulating film 13 and the electrode portion forming layer 16B a hydrazine-based aqueous solution, a potassium hydroxide aqueous solution, an amine-based etchant, or the like can be used.
  • tapered through holes 13H and 16H having a smaller diameter toward the back surface can be formed in the insulating film 13 and the electrode portion forming layer 16B.
  • the laminated body 10A having the electrode structure forming recesses 10K formed in this manner is used to remove the resist films 14A and 14B. Thereafter, as shown in FIG. A resist film 14C for plating is formed so as to cover the entire surface of the plating electrode layer 16A, and a pattern of the back electrode portion 17 of the electrode structure 15 to be formed is formed on the back surface of the support film forming layer 11A. A resist film 14D for plating having a plurality of pattern holes K2 formed in accordance with the corresponding pattern is formed.
  • a photoresist for plating is used as a material for forming the resist films 14C and 14D.
  • Various types can be used.
  • an electrolytic plating process is performed on the laminate 10A using the plating electrode layer 16A as an electrode to fill a metal into each of the electrode structure forming recesses 10K and each of the pattern holes K2 of the resist film 14D.
  • a plurality of projecting surface electrode portions 16 protruding from the surface of the insulating film 13, and the insulating film 13
  • a short-circuit portion 18 that extends through and a back electrode portion 17 connected to the other end of each of the short-circuit portions 18 is formed.
  • each of the back electrode portions 17 is in a state of being connected to each other via the support film forming layer 11A.
  • the back surface of the support film forming layer 11A is removed.
  • a notched etching resist film 14E is formed so as to cover the portion to be the supporting film 11 in the back electrode portion 17 and the supporting film forming layer 11A, as shown in FIG.
  • the resist film 14C is exposed.
  • the exposed portions of the plating electrode layer 16A and the support film forming layer 11A are etched to remove the entire plating electrode layer 16A and to expose the exposed portions of the support film forming layer 11A.
  • a plurality of back electrode portions 17 separated from each other are formed, and a plurality of openings 11H corresponding to the electrode regions of the integrated circuit formed on the wafer to be inspected are formed. Is formed.
  • the resist film 14E is removed from the back surface electrode portion 17 and the support film 11, and thereafter, as shown in FIG. 16, the back surface of the support film 11, the back surface of the insulating film 13, and the back surface electrode portion 17 are covered. Then, a resist film 14F is formed.
  • the electrode portion forming layer 16B is subjected to an etching treatment to remove the whole, thereby exposing the surface electrode portion 16 and the holding portion forming layer 19A as shown in FIG.
  • a patterned etching resist film 14G is formed so as to cover a portion to be the holding portion 19 in the surface electrode portion 16 and the holding portion forming layer 17A.
  • the exposed portion is removed by performing an etching process on the holding portion forming layer 17A, thereby removing the exposed portion from the peripheral surface of the base end portion of the surface electrode portion 16 as shown in FIG.
  • a holding portion 19 is formed to extend radially outward along the surface of the insulating film 11 continuously, thereby forming an electrode structure 15.
  • the resist film 14G while removing the resist film 14G from the front electrode portion 16 and the holding portion 19, the resist film 14F is removed from the back surface of the support film 11, the back surface of the insulating film 13 and the back electrode portion 17, and the surface of the support film 11 is further removed.
  • the protective tape 11T see FIG. 4
  • the sheet-like lobe 10 of the first example shown in FIGS. 1 to 3 is obtained.
  • the electrode structure forming recess 10K is previously formed in the laminate 10A having the insulating film 13, and the electrode structure forming recess 10K is used as a cavity to form the surface electrode portion. Since the surface electrode portion 16 is formed, the surface electrode portion 16 having a small diameter and a small variation in the protruding height can be obtained.
  • the base partial force of the surface electrode portion 16 is also continuously extended outward along the surface of the insulating film 13. Since the portion 19 can be formed reliably, even if the surface electrode portion 16 has a small diameter, the electrode structure 15 does not fall off the insulating film 13 and has high durability.
  • the probe 10 can be manufactured.
  • the insulating film 13 is integrally laminated on the support film forming layer 11A.
  • the support film forming layer 11 is etched. Since the opening 11H is formed by the ching process, the contact film 12 can be integrally formed on the support film 11 with high positional accuracy.
  • FIG. 20 is a plan view showing a second example of the sheet-like probe according to the present invention
  • FIG. 21 is a plan view showing an enlarged main part of the contact film in the sheet-like probe of the second example.
  • FIG. 22 is an enlarged cross-sectional view illustrating a main part of the sheet-like probe of the second example.
  • the sheet-like probe 10 of the second example is used, for example, for a wafer on which a plurality of integrated circuits are formed, for performing an electrical inspection of each of the integrated circuits in a wafer state, A support film 11 having the same configuration as the sheet-like probe 10 of the first example is provided.
  • the branch It is provided integrally with the membrane 11 and is supported.
  • Each of the contact films 12a has a flexible insulating film 13a, and a plurality of electrode structures 15 extending in the thickness direction of the insulating film 13a are formed on the insulating film 13a on a wafer to be inspected. According to the pattern corresponding to the pattern of the electrode to be inspected in some of the integrated circuits described above, the contact films 12a are arranged apart from each other in the surface direction of the insulating film 13a. Are arranged in each opening 11H of the support film 11.
  • Each of the electrode structures 15 is exposed on the surface of the insulating film 13a and protrudes from the surface of the insulating film 13a, and has a protruding surface electrode portion 16 and a rectangular flat back surface exposed on the back surface of the insulating film 13a.
  • the base portions of the electrode portion 17 and the front electrode portion 16 also extend continuously through the insulating film 13a in the thickness direction and are connected to the back electrode portion 17, and the base end of the front electrode portion 16.
  • the peripheral force of the portion is also constituted by a circular ring plate-shaped holding portion 19 which extends continuously and radially outward along the surface of the insulating film 13a.
  • the surface electrode portion 16 is formed in a tapered shape that becomes smaller in diameter toward the distal end of the base force following the short-circuit portion 18 and is formed in a truncated cone shape as a whole.
  • the short-circuit portion 18 continuous with the base end of the surface electrode portion 16 is tapered so that the back surface force of the insulating film 13a becomes smaller as going toward the surface, and the whole is formed in a truncated cone shape.
  • the material of the insulating film 13a and the material and dimensions of the electrode structure 15 are the same as those of the insulating film 13 and the electrode structure 15 of the sheet probe of the first example. .
  • the sheet-like probe 10 of the second example can be manufactured, for example, as follows.
  • the supporting film 11 and the electrode structure 15 are formed from the laminate 10A having the structure shown in FIG. 4 in the same manner as in the method of manufacturing the sheet-like probe 10 of the first example described above (see FIGS. 5 to 19). .).
  • the contact to be formed is formed on the surface of the insulating film 13, the surface electrode portion 16 and the holding portion 19.
  • a resist film 14H is formed in accordance with the pattern corresponding to the pattern of the film 12a, and the insulating film 13 is subjected to an etching process to remove an exposed portion, whereby the insulating film 13 is divided, as shown in FIG.
  • a plurality of insulating films 13a independent of each other are formed, thereby forming a plurality of contact films 12a in which a plurality of electrode structures 15 extending through the insulating film 13a in the thickness direction thereof are arranged.
  • the resist film 14F is removed from the back surface of the support film 11, the back surface of the insulating film 13a, and the back electrode portion 17, and the resist film 14H is removed from the surface of the insulating film 13a, the front electrode portion 16 and the holding portion 19, Further, by removing the protective tape from the surface force of the support film 11, the sheet-like lobe 10 of the second example shown in FIGS. 20 to 22 can be obtained.
  • the electrode structure 15 in each of the contact films 12a also has the base partial force of the surface electrode portion 16 continuously. Since the holding portion 19 extending outward along the surface is formed, even if the diameter of the front surface electrode portion 16 is small, the electrode structure 16 does not lose the back surface force of the insulating film 13a. High durability can be obtained.
  • the surface electrode portion 16 having a small diameter, a sufficient separation distance between the adjacent surface electrode portions 16 is ensured, so that the flexibility of the insulating film 13a is sufficiently exhibited, and as a result, the small pitch Thus, a stable electrical connection state can be reliably achieved even on the wafer on which the electrode to be inspected is formed.
  • a plurality of openings 11H are formed in the support film 11 corresponding to the electrode regions where the electrodes to be inspected of the circuit device to be inspected are formed.
  • FIG. 25 is a plan view showing a third example of the sheet-like probe according to the present invention.
  • FIG. 26 is an enlarged plan view showing a main part of the contact film in the sheet-like probe of the third example.
  • FIG. 27 and FIG. 27 are explanatory cross-sectional views showing the main parts of the sheet-like probe of the third example in an enlarged manner.
  • the sheet-like probe 10 of the third example is used for performing an electrical inspection of each of the integrated circuits on a wafer on which a plurality of integrated circuits are formed, for example, in a wafer state.
  • a support film 11 having the same configuration as the sheet-like probe 10 of the first example is provided.
  • a plurality of contact films 12b are supported by the opening edges so as to cover each of the openings 11H of the support film 11, and the contact films 12b are adjacent to each other. They are arranged independently of each other.
  • Each of the contact films 12b has a flexible insulating film 13b, and a plurality of electrode structures 15 made of metal extending in the thickness direction of the insulating film 13b are inspected on the insulating film 13b.
  • the insulating film 13b is disposed apart from each other in the surface direction of the insulating film 13b. Are arranged so as to be located in the openings 11H of the support film 11.
  • Each of the electrode structures 15 is exposed on the surface of the insulating film 13b and protrudes from the surface of the insulating film 13b, and a rectangular flat back surface exposed on the back surface of the insulating film 13b.
  • the base portion force of the electrode portion 17 and the surface electrode portion 16 also extends continuously through the insulating film 13b in the thickness direction thereof and is connected to the back surface electrode portion 17, and the base end of the surface electrode portion 16
  • the peripheral force of the portion is also constituted by a circular ring plate-like holding portion 19 that extends continuously and radially outward along the surface of the insulating film 13b.
  • the surface electrode portion 16 is formed in a tapered shape that becomes smaller in diameter toward the distal end of the base force following the short-circuit portion 18 and is formed in a truncated cone shape as a whole.
  • the short-circuit portion 18 continuous with the base end of the front surface electrode portion 16 is tapered so that the back surface force of the insulating film 13b becomes smaller in diameter toward the front surface, and the whole is formed in a truncated cone shape.
  • the material of the insulating film 13b, the electrode structure 15 are the same as those of the insulating film 13 and the electrode structure 15 of the sheet-like probe of the first example.
  • the sheet probe 10 of the third example can be manufactured, for example, as follows.
  • the support film 11 and the electrode structure 15 are formed from the laminate 10A having the configuration shown in FIG. 4 in the same manner as in the method of manufacturing the sheet-like probe 10 of the first example described above. ).
  • a resist film 14H is formed according to a pattern corresponding to the above, and a plurality of insulating films 13b independent of each other are formed as shown in FIG. 29 by etching the insulating film 13 and removing the exposed portions.
  • a plurality of contact films 12b each having the plurality of electrode structures 15 extending through the insulating film 13b in the thickness direction thereof are formed on the insulating film 13b.
  • the resist film 14F is removed from the back surface of the support film 11, the back surface of the insulating film 13b, and the back electrode portion 17, the resist film 14H is removed from the surface of the insulating film 13b, the front electrode portion 16 and the holding portion 19, Further, by removing the protective tape from the support film 11, the sheet-like flow valve 10 of the third example shown in FIGS. 25 to 27 can be obtained.
  • the electrode structure 15 in each of the contact films 12b has the base partial force of the surface electrode portion 16 continuously. Since the holding portion 19 extending outward along the surface is formed, even if the diameter of the front surface electrode portion 16 is small, the electrode structure 16 does not lose the back surface force of the insulating film 13b. High durability can be obtained.
  • the surface electrode portion 16 having a small diameter, a sufficient separation distance between the adjacent surface electrode portions 16 is ensured, so that the flexibility of the insulating film 13b is sufficiently exhibited, and as a result, the small pitch Thus, a stable electrical connection state can be reliably achieved even on the wafer on which the electrode to be inspected is formed.
  • the support film 11 has an electrode on which an electrode to be inspected is formed on a wafer to be inspected.
  • a plurality of openings 11H are formed corresponding to the polar regions, and the contact films 12b disposed in each of these openings 11H have a small area, and the contact films 12b having a small area are formed by the insulating film 13b. Since the absolute amount of thermal expansion in the plane direction is small, the thermal expansion of the insulating film 13b can be reliably restricted by the support film 11.
  • the wafer to be inspected is a large area having a diameter of 8 inches or more and the pitch of the electrodes to be inspected is extremely small, in the burn-in test, the distance between the electrode structure 17 and the electrode to be inspected due to a temperature change is increased. Displacement can be reliably prevented, and as a result, a good electrical connection state to the wafer can be stably maintained.
  • FIG. 30 is an explanatory cross-sectional view showing a configuration of an example of a circuit device inspection device according to the present invention.
  • the circuit device inspection device performs the above-described operation for each of a plurality of integrated circuits formed on a wafer.
  • This is a wafer inspection device for performing electrical inspection of integrated circuits in a wafer state.
  • This inspection apparatus has a probe card 1 for electrically connecting each of the electrodes 7 to be inspected of a wafer 6 which is a circuit apparatus to be inspected, to a tester.
  • a pressure plate 3 for pressing the probe card 1 downward is provided on the rear surface (the upper surface in the figure) of the probe card 1, and a wafer mounting surface on which the wafer 6 is mounted is provided below the probe card 1.
  • a mounting table 4 is provided, and a heater 5 is connected to each of the pressure plate 3 and the wafer mounting table 4.
  • the probe card 1 has a plurality of test electrodes 21 on the surface thereof in accordance with the pattern corresponding to the pattern of the test electrodes 7 in all the integrated circuits formed on the wafer 6, as also shown in FIG.
  • the inspection circuit board 20 formed on the lower surface (in the figure), the anisotropic conductive connector 30 disposed on the surface of the inspection circuit board 20, and the surface of the anisotropic conductive connector 30 And a sheet probe 10 having the configuration shown in FIG.
  • the electrode structure 15 in the sheet-like probe 10 has the configuration shown in FIG. 1 in which a plurality of electrode structures 15 are arranged according to the pattern corresponding to the pattern of the electrode 7 to be inspected in all the integrated circuits formed on the wafer 6.
  • a sheet probe 10 is arranged.
  • the anisotropic conductive connector 30 has all the integrated portions formed on the wafer 6.
  • a frame plate 31 in which a plurality of openings 32 are formed corresponding to the electrode regions where the electrodes 7 to be inspected in the circuit are formed, and the frame plate 31 is disposed so as to cover one opening 32, and A plurality of anisotropic conductive sheets 35 fixed and supported at the opening edge of the opening 31 are provided.
  • Each of the anisotropic conductive sheets 35 is formed of an elastic polymer material, and has a pattern corresponding to the pattern of the electrode 7 to be inspected in one electrode region formed on the wafer 6 which is the circuit device to be inspected. And a plurality of conductive portions 36 extending in the thickness direction, and an insulating portion 37 for insulating each of these conductive portions 36 from each other. Further, in the illustrated example, on both surfaces of the anisotropic conductive sheet 35, at the location where the conductive portion 36 and its peripheral portion are located, protruding portions 38 from which other surface forces also protrude are formed.
  • Each of the conductive portions 36 in the anisotropic conductive sheet 35 contains conductive particles P exhibiting magnetism densely in a state of being aligned in the thickness direction.
  • the insulating portion 37 contains no or almost no conductive particles P.
  • the anisotropic conductive connector 30 is arranged on the surface of the inspection circuit board 20 such that each of the conductive portions 36 is located on the inspection electrode 21, and the sheet probe 10 is connected to the anisotropic conductive connector 30.
  • On the front surface each of the back electrode portions 17 of the electrode structure 15 is arranged so as to be located on the conductive portion 36.
  • guide holes are formed in positioning holes (not shown) formed in the support film 11 of the sheet-like probe 10 and positioning holes (not shown) formed in the frame plate 31 of the anisotropic conductive connector 30. The pin 2 is inserted, and in this state, the sheet probe 10 and the anisotropic conductive connector 30 are fixed to each other.
  • substrate materials can be used as the substrate material constituting the inspection circuit board 20, and specific examples thereof include glass fiber reinforced epoxy resin, glass fiber reinforced phenol resin, glass fiber Examples include composite resin materials such as reinforced polyimide resin and glass fiber reinforced bismaleimide triazine resin, and ceramic materials such as glass, silicon dioxide, and alumina.
  • instrument linear thermal expansion coefficient used the following 3 X 10- 5 ⁇ 1 X 10- 7 ⁇ 1 X 10 "VK, Particularly preferably 1 X 10- b ⁇ 6 X 10- 6 ⁇ .
  • Such a substrate material include Pyrex (registered trademark) glass, quartz glass, alumina, beryllia, silicon carbide, aluminum nitride, and boron nitride.
  • the frame plate 31 in the anisotropic conductive connector 30 As a material forming the frame plate 31 in the anisotropic conductive connector 30, if the frame plate 31 does not easily deform and has a rigidity enough to maintain its shape stably.
  • a material forming the frame plate 31 in the anisotropic conductive connector 30 if the frame plate 31 does not easily deform and has a rigidity enough to maintain its shape stably.
  • various materials such as a metal material, a ceramic material, and a resin material can be used.
  • the frame plate 31 is made of, for example, a metal material, the surface of the frame plate 31 is insulated. A functional coating may be formed.
  • the metal material forming the frame plate 31 include iron, copper, nickel, chromium, cobalt, magnesium, manganese, molybdenum, indium, lead, palladium, titanium, tungsten, aluminum, gold, platinum, silver, and the like. Metal or an alloy or alloy steel obtained by combining two or more of these metals.
  • resin material forming the frame plate 31 examples include a liquid crystal polymer and a polyimide resin.
  • the material for forming the frame plate 31 a coefficient of linear thermal expansion 3 X 10- 5 ZK following ones more preferably it is preferred instrument using an 1 X ⁇ - 7 ⁇ X IO K , particularly good Mashiku 1 X 10- 6 ⁇ 8 X 10- 6 ⁇ .
  • Such a material include an invar-type alloy such as invar, an elinvar-type alloy such as elinvar, an alloy of magnetic metals such as Super Invar, Kovar, and 42 alloy or alloy steel.
  • the thickness of the frame plate 31 is not particularly limited as long as its shape is maintained and the anisotropic conductive sheet 35 can be supported. For example, it is preferably from 25 to 600 ⁇ m, more preferably from 40 to 400 ⁇ m.
  • the total thickness of the anisotropic conductive sheet 35 in the anisotropic conductive connector 30 is preferably 50 to 2000111, and more preferably 70 to 2000. : L0 00 ⁇ m, particularly preferably 80-500 ⁇ m.
  • the thickness is 50 ⁇ m or more, the anisotropic conductive sheet 35 has sufficient strength.
  • the thickness is 2000 / zm or less, the conductive portion 36 having required conductive characteristics can be obtained without fail.
  • the total height of the protrusions 38 is preferably at least 10% of the thickness of the protrusion 38, more preferably at least 15%.
  • the height of the projection 38 is preferably 100% or less of the shortest width or diameter of the projection 38, more preferably 70% or less.
  • the elastic polymer material forming the anisotropic conductive sheet 35 a heat-resistant polymer material having a crosslinked structure is preferable.
  • a curable polymer substance forming material that can be used to obtain a strong crosslinked polymer substance a liquid silicone rubber that can use various materials is preferable.
  • the liquid silicone rubber may be an addition type or a condensation type, but an addition type liquid silicone rubber is preferable.
  • This addition-type liquid silicone rubber is cured by a reaction between a bullet group and a SiH bond, and is a one-pack type (one-component type) made of a polysiloxane containing both a vinyl group and a Si—H bond.
  • a two-component type (two-component type), which also has a polysiloxane containing a butyl group and a polysiloxane containing a Si—H bond.
  • the two-component addition type liquid is used. It is preferable to use silicone rubber.
  • the anisotropic conductive sheet 35 is formed from a cured product of liquid silicone rubber (hereinafter, referred to as “cured silicone rubber”)
  • the cured silicone rubber has a compression set at 150 ° C.
  • the content is preferably 10% or less, more preferably 8% or less, and even more preferably 6% or less. If the compression set exceeds 10%, the conductive part 36 may be subject to permanent set when the obtained anisotropic conductive connector is used repeatedly many times or in a high temperature environment. to this As a result, the chain of the conductive particles P in the conductive portion 36 is disturbed, so that it becomes difficult to maintain the required conductivity.
  • the compression set of the cured silicone rubber can be determined by a method based on JIS K 6249.
  • the cured silicone rubber preferably has a durometer A hardness of 10 to 60 at 23 ° C, more preferably 15 to 55, and particularly preferably 20 to 50.
  • the insulation 37 which insulates the conductive parts 36 from each other when pressurized, is excessively distorted and immediately maintains the required insulation between the conductive parts 36. Can be difficult.
  • the durometer A hardness exceeds 60, a considerably large load is required to apply an appropriate strain to the conductive portion 36, and thus the wafer as the circuit device to be inspected may be greatly deformed or broken. Is more likely to occur.
  • the cured silicone rubber forming the anisotropic conductive sheet 35 has a durometer A hardness at 23 ° C. of 25 to 40. Is preferred! / ,.
  • the durometer A hardness of the cured silicone rubber can be measured by a method based on JIS K 6249.
  • the cured silicone rubber preferably has a tear strength at 23 ° C. of 8 kNZm or more, more preferably 10 kNZm or more, and even more preferably 15 kNZm or more. Above, particularly preferably 20 kNZm or more. If the tear strength is less than 8 kNZm, the durability tends to decrease when the anisotropic conductive sheet 35 is subjected to excessive strain.
  • the tear strength of the cured silicone rubber can be determined by a method based on JIS K 6249.
  • an appropriate curing catalyst can be used to cure the addition-type liquid silicone rubber.
  • a platinum-based curing catalyst can be used, and specific examples thereof include chloroplatinic acid and a salt thereof, a platinum-unsaturated group-containing siloxane complex, a complex of bulletsiloxane and platinum, Known complexes such as a complex of platinum with 1,3-dibutyltetramethyldisiloxane, triorganophosphine, a complex of phosphite and platinum, an acetyl acetate platinum chelate, a complex of cyclic gen and platinum, etc. .
  • the amount of the curing catalyst to be used is appropriately selected in consideration of the type of the curing catalyst and other curing conditions, but is usually 3 to 15 parts by weight based on 100 parts by weight of the addition type liquid silicone rubber.
  • the addition-type liquid silicone rubber is required to improve the thixotropy of the addition-type liquid silicone rubber, adjust the viscosity, improve the dispersion stability of the conductive particles, or obtain a base material having high strength.
  • an inorganic filler such as ordinary silica powder, colloidal silica, air-port gel silica, alumina or the like can be contained as necessary.
  • conductive particles P contained in conductive portion 36 particles obtained by coating the surface of core particles exhibiting magnetism (hereinafter, also referred to as “magnetic core particles”) with a highly conductive metal are used.
  • the “highly conductive metal” refers to a metal having a conductivity at 0 ° C. of 5 ⁇ 10 6 ⁇ 1 or more.
  • the magnetic core particles for obtaining the conductive particles P preferably have a number average particle diameter of 3 to 40 ⁇ m.
  • the number average particle diameter of the magnetic core particles refers to a value measured by a laser diffraction scattering method.
  • the number average particle diameter is 3 ⁇ m or more, deformation under pressure is easy, and the resistance It is easy to obtain conductive parts 36 with high reliability.
  • the number average particle diameter is 40 m or less, the fine conductive portion 36 can be easily formed, and the obtained conductive portion 36 tends to have stable conductivity.
  • the magnetic core particles preferably have a BET specific surface area of 10 to 500 m 2 ZKG, more preferably 20 to 500 m 2 ZKG, particularly preferably 50 to 400 m 2 ZKG.
  • the magnetic core particles have a sufficiently large area in which plating can be performed, so that a required amount of plating can be reliably performed on the magnetic core particles. Therefore, the conductive particles P having high conductivity can be obtained, and the contact area between the conductive particles P is sufficiently large, so that stable and high conductivity can be obtained.
  • the BET specific surface area is 500 m 2 Zkg or less, the magnetic core particles do not become brittle, and maintain high stability and high conductivity with little breakage when a physical stress is applied. Is done.
  • the magnetic core particles preferably have a particle diameter variation coefficient of 50% or less, more preferably 40% or less, still more preferably 30% or less, and particularly preferably 20% or less. .
  • the coefficient of variation of the particle diameter is determined by the formula: ( ⁇ ZDn) ⁇ 100 (where ⁇ indicates the value of the standard deviation of the particle diameter, and Dn indicates the number average particle diameter of the particles).
  • ⁇ indicates the value of the standard deviation of the particle diameter
  • Dn indicates the number average particle diameter of the particles.
  • the saturation magnetic force is 0.1 W b / m 2 or more. And more preferably 0.3 Wb / m 2 or more, particularly preferably 0.5 WbZm 2 or more, and specifically, iron, nickel, cobalt, or an alloy thereof. Is mentioned.
  • the highly conductive metal coated on the surface of the magnetic core particles can be used as the highly conductive metal coated on the surface of the magnetic core particles, and among these, they are chemically stable and have high conductivity. It is preferable to use gold for the point.
  • the ratio of the highly conductive metal to the core particles [(mass of the highly conductive metal Z mass of the core particles) X 100] is 15% by mass or more, and preferably 25 to 35% by mass. It is said.
  • the proportion of the highly conductive metal is less than 15% by mass, when the obtained anisotropically conductive connector is repeatedly used in a high temperature environment, the conductivity of the conductive particles P is significantly reduced. , The required conductivity cannot be maintained.
  • the conductive particles P preferably have a BET specific surface area of 10 to 500 m 2 Zkg.
  • the surface area of the coating layer is sufficiently large, so that the coating layer having a high total weight of the highly conductive metal can be formed. Particles having high properties can be obtained, and the contact area between the conductive particles P is sufficiently large, so that stable and high conductivity can be obtained.
  • the BET specific surface area is 500 m 2 Zkg or less, the conductive particles do not become brittle, and stable and high conductivity is maintained with little breakage when a physical stress is applied. You. Further, the number average particle diameter of the conductive particles P is preferably 3 to 40 / ⁇ , more preferably 6 to 25 ⁇ .
  • the anisotropic conductive sheet 35 obtained can be easily deformed under pressure, and sufficient electric contact can be obtained between the conductive particles in the conductive portion 36.
  • the shape of the conductive particles is not particularly limited. However, since they can be easily dispersed in the polymer-forming material, they are spherical, star-shaped, or aggregated. It is preferable that the particles are in a lump formed by the secondary particles.
  • the water content of the conductive particles is preferably 5% by mass or less, more preferably 3% by mass or less, further preferably 2% by mass or less, and particularly preferably 1% by mass or less.
  • the conductive particles may be those whose surfaces have been treated with a coupling agent such as a silane coupling agent.
  • a coupling agent such as a silane coupling agent.
  • the adhesion between the conductive particles ⁇ and the elastic polymer substance is increased, and as a result, the obtained conductive particles are obtained.
  • the anisotropic conductive sheet 35 has high durability in repeated use.
  • the amount of the coupling agent to be used is appropriately selected within a range that does not affect the conductivity of the conductive particles P, but the coating ratio of the coupling agent on the surface of the conductive particles P (coupling relative to the surface area of the conductive particles P). More preferably, the coverage is 7 to: LOO%, more preferably 10 to: LOO%, particularly preferably 20 to 100. %.
  • Such conductive particles P can be obtained, for example, by the following method.
  • a ferromagnetic material is formed into particles by a conventional method, or commercially available ferromagnetic particles are prepared, and the particles are subjected to a classification process to prepare magnetic core particles having a required particle diameter.
  • the classification process of the particles can be performed by a classification device such as an air classification device and a sonic sieve device.
  • the specific conditions of the classification process are appropriately set according to the number average particle diameter of the target magnetic core particles, the type of the classification device, and the like.
  • the surface of the magnetic core particles is treated with an acid, and further, for example, washed with pure water to remove impurities such as dirt, foreign matter, and oxide film present on the surface of the magnetic core particles.
  • impurities such as dirt, foreign matter, and oxide film present on the surface of the magnetic core particles.
  • examples of the acid used for treating the surface of the magnetic core particles include hydrochloric acid.
  • the method for coating the surface of the magnetic core particles with the highly conductive metal is not limited to these methods, and can be an electroless plating method or a replacement plating method.
  • a method for producing conductive particles by an electroless plating method or a displacement plating method will be described.
  • an acid-treated and washed magnetic core particle is added to a plating solution to form a slurry.
  • the magnetic core particles are prepared and subjected to electroless plating or substitution plating while stirring the slurry.
  • the particles in the slurry are separated by hydraulic separation, and thereafter, the particles are washed with, for example, pure water to obtain conductive particles having the surface of the magnetic core particles coated with a highly conductive metal.
  • a plating layer made of a highly conductive metal may be formed on the surface of the lower plating layer.
  • the method of forming the base plating layer and the plating layer formed on the surface thereof is not particularly limited, but the base plating layer is formed on the surface of the magnetic core particles by an electroless plating method, and thereafter, by the displacement plating method. It is preferable to form a plating layer made of a highly conductive metal on the surface of the base plating layer.
  • the plating liquid used for the electroless plating or the replacement plating is not particularly limited, and various commercially available plating liquids can be used. Can be used.
  • the particles may aggregate, thereby generating conductive particles having a large particle diameter. It is preferable to perform the classification treatment of the conductive particles, whereby the conductive particles having the desired particle diameter can be reliably obtained.
  • Examples of the classification device for performing the classification process on the conductive particles include those exemplified as the classification device used in the classification process for preparing the magnetic core particles described above.
  • the content ratio of the conductive particles P in the conductive portion 36 is preferably 10 to 60% by volume, preferably 15 to 50%. If this ratio is less than 10%, the conductive portion 36 having a sufficiently low electric resistance may not be obtained. On the other hand, if this ratio exceeds 60%, the resulting conductive portion 36 may be fragile, and the elasticity required for the conductive portion 36 may not be obtained immediately.
  • the anisotropic conductive connector as described above can be manufactured, for example, by the method described in JP-A-2002-324600.
  • the wafer 6 to be inspected is mounted on the wafer mounting table 4, and then the probe card 1 is pressed downward by the pressing plate 3, so that the sheet probe
  • the force of each of the surface electrode portions 16 in the electrode structure 15 of 10 comes into contact with each of the electrodes 7 to be inspected of the wafer 6, and each of the surface electrode portions 16 presses each of the electrodes 7 to be inspected of the wafer 6. Is done.
  • each of the conductive portions 36 in the anisotropic conductive sheet 35 of the anisotropic conductive connector 30 The electrode 21 and the back surface electrode portion 17 of the electrode structure 15 of the sheet-shaped probe 10 are pressed and compressed in the thickness direction, whereby a conductive path is formed in the conductive portion 36 in the thickness direction.
  • electrical connection between the electrode 7 to be inspected on the wafer 6 and the inspection electrode 21 on the circuit board 20 for inspection is achieved.
  • the wafer 6 is heated to a predetermined temperature via the wafer mounting table 4 and the pressing plate 3 by the calo heater 5, and in this state, a required number of each of the plurality of integrated circuits on the wafer 6 is required. Is performed.
  • each of the openings 32 of the frame plate 31 in the anisotropic conductive connector 30 is formed corresponding to the electrode region where the electrodes 7 to be inspected of all the integrated circuits in the wafer 6 to be inspected are formed.
  • the anisotropic conductive sheet 30 disposed in each of the openings 32 has a small area, and the anisotropic conductive sheet 30 having a small area has a small absolute amount of thermal expansion in the surface direction.
  • the thermal expansion in the plane direction of the conductive sheet 30 is reliably restricted by the frame plate 31, so that the displacement between the conductive portion 36, the electrode structure 15, and the inspection electrode 21 due to a temperature change can be reliably prevented.
  • the inspection apparatus having such a probe card 1, it is possible to reliably achieve a stable electrical connection state even to the wafer 6 on which the electrodes 7 to be inspected are formed at a small pitch. Since the probe card 1 has high durability, even when testing a large number of wafers, a highly reliable test can be performed over a long period of time. In addition, even if the wafer 6 has a large area of at least 8 inches in diameter and the pitch of the electrodes 7 to be inspected is extremely small, it is necessary to stably maintain a good electrical connection state to the wafer 6 in the burn-in test. As a result, the required electrical inspection can be reliably performed for each of the plurality of integrated circuits on the wafer 6.
  • circuit device inspection device of the present invention is not limited to the wafer inspection device of the above example, and various changes can be made as follows.
  • the probe card 1 shown in FIGS. 30 and 31 achieves the electrical connection to the electrodes 7 to be inspected of all the integrated circuits formed on the wafer 6 at one time. It may be electrically connected to the electrodes 7 to be inspected of a plurality of integrated circuits selected from all the formed integrated circuits.
  • the number of integrated circuits to be selected is appropriately selected in consideration of the size of the wafer 6, the number of integrated circuits formed on the wafer 6, the number of electrodes to be inspected in each integrated circuit, and the like. 64 and 128.
  • the probe card 1 is electrically connected to the electrodes 7 to be inspected of a plurality of integrated circuits selected from all the integrated circuits formed on the wafer 6. After that, by repeating the process of electrically connecting the probe card 1 to the electrodes 7 to be inspected of a plurality of integrated circuits selected from other integrated circuits and performing the inspection, the wafer is inspected. Electrical inspection of all the integrated circuits formed in 6 can be performed.
  • an inspection apparatus when an electrical inspection is performed on an integrated circuit formed on a wafer having a diameter of 8 inches or 12 inches with a high V and a high degree of integration, all the integrated circuits are required.
  • the number of test electrodes and the number of wirings on the test circuit board used can be reduced as compared with the method of testing all circuits at once, thereby reducing the manufacturing cost of the test equipment.
  • a dagger can be planned.
  • a ring-shaped holding member 40 may be provided on the periphery of the support film 13.
  • Examples of a material forming such a holding member 40 include an invar alloy such as invar and super invar, an elinvar alloy such as elinvar, a low thermal expansion metal material such as kovar and 42 alloy, or alumina, silicon carbide, and silicon nitride. Such as ceramic materials Can be used.
  • the anisotropic conductive sheet 35 of the anisotropic conductive connector 30 has a conductive portion 36 formed according to a pattern corresponding to the pattern of the electrode 7 to be inspected, and also has an electrode for the electrode 7 to be inspected.
  • the conductive portion for disconnection may not be formed.
  • the inspection device of the present invention is not limited to a wafer inspection device, but is used as an inspection device for circuits formed on semiconductor chips, package LSI such as BGA and CSP, and semiconductor integrated circuit devices such as CMC. Can be configured.
  • each of the integrated circuits L formed on the wafer 6 has an electrode area A to be inspected at the center thereof, and the electrode area A to be inspected has, as shown in FIG. 60 rectangular electrodes 7 with a vertical dimension (vertical direction in Fig. 36) of 200 ⁇ m and a horizontal dimension (horizontal direction in Fig. 36) of 50 ⁇ m are arranged at a pitch of 100 ⁇ m. They are arranged in a line in the direction.
  • the total number of the electrodes 7 to be inspected in the entire wafer 6 is 23580, and all the electrodes 7 to be inspected are electrically insulated from each other.
  • this wafer Wl this wafer is referred to as “test wafer Wl”.
  • test wafer W2 393 integrated circuits (L) having the same configuration as the above-described test wafer W1 were formed on the wafer (6) except that every other two were electrically connected to each other.
  • this wafer is referred to as “test wafer W2”.
  • laminated polyimide sheet with a 20 cm diameter and 5 ⁇ m thick metal layer made of copper on both sides of a 20 cm diameter and 17.5 ⁇ m thick polyimide sheet (hereinafter referred to as “laminated sheet”).
  • laminated sheet B a laminated polyimide sheet in which a 20.4 cm diameter and 12.5 m thick polyimide sheet is laminated on one surface of a metal layer made of 42 alloy having a diameter of 22 cm and a thickness of 10 m
  • an adhesive layer made of a thermoplastic polyimide having a thickness of about 1 ⁇ m is formed on the surface of the polyimide sheet in the laminated sheet B, and the laminated sheet A is disposed on the adhesive layer and the metal layer of the laminated sheet B is formed.
  • a protective tape made of polyethylene terephthalate having an inner diameter of 20.4 cm and an outer diameter of 22 cm is placed on one surface of the peripheral portion, and is subjected to thermocompression bonding in this state to form a laminate (10A) having the configuration shown in FIG. Produced.
  • the obtained laminate (10A) has an insulating film (13) made of polyimide having a thickness of 12.5 ⁇ m on the surface of a supporting film forming layer (11 A) made of 42 alloy having a thickness of 10 m, 5 ⁇ m thick copper holding layer (19A), 17.5 ⁇ m thick polyimide electrode forming layer (16B) and 5 ⁇ m thick copper plating electrode
  • the layer (16A) is laminated in this order, and the protective tape (11T) is further laminated on the peripheral region on the surface of the support film forming layer (11A).
  • a resist film (14A) is formed on the entire surface of the layer for a metal electrode (16A) with a dry film resist having a thickness of 25 ⁇ m on the laminate (10A), and a support film is formed.
  • a resist film (23580) having a circular pattern hole (K1) having a diameter of 60 ⁇ m according to the pattern corresponding to the pattern of the electrode to be inspected formed on the test wafer W1 (231). 14B) (see FIG. 5).
  • the exposure treatment is performed by irradiating 80 mJ of ultraviolet light with a high-pressure mercury lamp, and the development treatment is immersed in a developer consisting of a 1% aqueous sodium hydroxide solution for 40 seconds. The operation was repeated twice.
  • the support film forming layer (11A) is subjected to an etching treatment at 50 ° C. for 30 seconds using a ferric chloride-based etchant to form the support film forming layer (11A). Then, 23580 through holes (17H) communicating with the pattern holes (K1) of the resist film (14B) were formed (see FIG. 6). Thereafter, the insulating film (13) is etched using an amine-based polyimide etchant (“TPE-3000”, manufactured by Toray Engineering Co., Ltd.) at 80 ° C. for 10 minutes to obtain an insulating film (13).
  • TPE-3000 amine-based polyimide etchant
  • each of the through holes (13H) has a tapered shape that becomes smaller in diameter toward the rear surface of the insulating film (13).
  • the caliber was 7 m.
  • the holding portion forming layer (19A) is subjected to an etching treatment at 50 ° C. for 30 seconds using a ferric chloride-based etching solution to form the holding portion forming layer (19A).
  • a ferric chloride-based etching solution to form the holding portion forming layer (19A).
  • 23580 through holes (19H) communicating with the through holes (13H) of the insulating film (13) were formed (see FIG. 8).
  • the electrode forming layer (16B) is etched at 80 ° C for 10 minutes using an amine-based polyimide etchant (“TPE-3000” manufactured by Toray Engineering Co., Ltd.).
  • 23580 through holes (16H) communicating with the through holes (19H) of the holding portion forming layer (19A) were formed in the electrode portion forming layer (16B) (see FIG. 9).
  • Each of the through holes (16H) is tapered so that the back surface force of the electrode forming layer (16B) becomes smaller as it goes to the front surface. Had an opening diameter of 18
  • the through holes (17H) of the support film forming layer (11A), the through holes (13H) of the insulating film (13), and the holding portion forming layer (19A) are formed on the back surface of the laminate (10A).
  • electrode structure forming recesses (10K) were formed by communicating the through holes (19H) of the electrodes and the through holes (16H) of the electrode portion forming layer (16B).
  • the laminate (10A) on which the electrode structure forming recess (10K) was formed was immersed in a sodium hydroxide solution at 45 ° C. for 2 minutes to remove the laminate (10A) from the laminate (10A).
  • the laminated film (10A) is coated with a 25 ⁇ m-thick dry film resist so as to cover the entire surface of the plating electrode layer (16A).
  • 23580 rectangular pattern holes with dimensions of 150 mX m communicating with the through holes (17H) of the support film forming layer (11A) are formed on the back surface of the support film forming layer (11A).
  • a resist film (14D) on which (K2) was formed was formed (see FIG. 10).
  • the exposure treatment was performed by irradiating 80 mJ of ultraviolet light with a high-pressure mercury lamp, and the development treatment was immersed in a developer consisting of a 1% aqueous sodium hydroxide solution for 40 seconds. The operation was repeated twice.
  • the laminate (10A) is immersed in a plating bath containing nickel sulfamate, and the laminate (10A) is subjected to electrolytic plating using the plating electrode layer (16A) as an electrode.
  • a patterning etching resist film (14E) is covered with a 25 m-thick dry film resist so as to cover the portion to be a support film in the support film forming layer (11A) and the back electrode portion (17). Formed (see Figure 13).
  • the exposure treatment was performed by irradiating 80 mJ of ultraviolet light with a high-pressure mercury lamp, and the development treatment was immersed in a developer consisting of a 1% aqueous sodium hydroxide solution for 40 seconds.
  • the protective seal was removed from the resist film (14C) formed on the laminate (10A), and then the resist film (14E) and the support film forming layer were removed.
  • the exposed portion of (11A) was covered with a protective seal made of polyethylene terephthalate having a thickness of 25 m, and the laminate (10A) was immersed in an aqueous sodium hydroxide solution at 45 ° C for 2 minutes.
  • the laminate (10A) also removed the resist film (14C) (see FIG. 14).
  • the protective seal was also removed from the resist film (14E) and the support film forming layer (11A), and then the ammonia-based etching was performed on the plating electrode layer (16A) and the support film forming layer (11A).
  • each of the back electrode portions (17) is separated from each other, and each of the vertical and horizontal dimensions formed according to the pattern corresponding to the electrode region pattern in the integrated circuit formed on the test wafer W1 is 2 mm X 6.
  • a support film (11) having a plurality of 5 mm openings (11H) was formed (see FIG. 15).
  • the laminate (10A) is immersed in an aqueous solution of sodium hydroxide at 45 ° C. for 2 minutes to remove the resist film (14E) on the back surface of the support film (11) and the back electrode portion (17). did. Thereafter, a resist film (14F) was formed using a 25-m-thick dry film resist so as to cover the back surface of the support film (11), the back surface of the insulating film (13), and the back electrode portion (17) (see FIG. 16).
  • the resist film (14F) is covered with a protective seal made of polyethylene terephthalate having a thickness of 25 m, and then the amine-based polyimide etching solution (manufactured by Toray Engineering Co., Ltd., The electrode forming layer (16B) was removed by etching using TPE-3000 ”) at 80 ° C for 10 minutes (see Fig. 17).
  • a 25 ⁇ m-thick dry film resist is used to cover the surface electrode portion (16) and the portion to be the holding portion (19) in the first surface side metal layer (17A).
  • a film (14G) was formed (see FIG. 18).
  • the exposure treatment is performed by irradiating 80 mJ ultraviolet rays with a high-pressure mercury lamp, and the development treatment is immersed in a developer consisting of a 1% aqueous sodium hydroxide solution for 40 seconds. The operation was repeated twice. Thereafter, the holding portion forming layer (19A) is subjected to an etching treatment under a condition of 50 ° C.
  • the resist film (14F) was immersed in a sodium hydroxide solution at 45 ° C. for 2 minutes to remove the surface electrode portion (16) and the holding portion (19). 14G), the back surface of the support film (11), the back surface of the insulating film (13), and the back electrode (17).
  • the resist film (14F) is removed, and the surface force of the support film (11) is protected.
  • the tape (11T) was removed. After that, a ring-shaped holding member (40) made of silicon nitride having an outer diameter of 22 cm, an inner diameter of 20.5 cm and a thickness of 2 mm is disposed on the surface of the peripheral portion of the support film (11).
  • the holding member (40) is bonded to the supporting film (11) by pressing the supporting member (40) and the supporting film (11) at 180 ° C. for 2 hours, thereby forming the sheet-like process according to the present invention.
  • One piece (10) was manufactured (see Fig. 33).
  • the obtained sheet probe (10) has a thickness d of the insulating film (13) in the contact film (12) of 12.5 ⁇ ⁇ , and a thickness of the surface electrode portion (16) of the electrode structure (15).
  • the shape is a truncated cone, with a radius R force of 7 / ⁇ ⁇ at its base end, a radius R force at its tip ⁇ 8 / ⁇ ⁇ , a protruding height h of 22 m, and a short circuit (18).
  • the back electrode (17) is a rectangular flat plate, and its width (diameter R) is 60 ⁇ m
  • the vertical width is 200 / z m
  • the thickness D is m
  • the shape of the holding part (19) is a circular ring plate.
  • the outer diameter R force is 0 m
  • its thickness D force / z m is 10 m thick
  • the supporting film (1) is 10 m thick
  • sheet probe Ml sheet probe M4
  • Example 2 In the same manner as in Example 1, a laminated body (10A) and a support film (11) and an electrode structure (15) were formed (see FIGS. 4 to 19). By immersing the resist film (14G) in the aqueous solution for 2 minutes, the force of the surface electrode portion (16) and the holding portion (19) was also removed.
  • a plurality of contact films (12b) in which a plurality of electrode structures (15) extending through the insulating film (13b) in the thickness direction were formed (see FIGS. 28 and 29).
  • the resist film (14F) is removed from the back surface of the support film (11), the back surface of the insulating film (13b) and the back electrode portion (17), and the surface of the insulating film (13b) and the surface electrode portion (16) are removed.
  • the resist film (14H) was removed from the holding portion (19), and the support film (11) was removed from the protective tape.
  • a ring-shaped silicon nitride holding member (40) having an outer diameter of 22 cm, an inner diameter of 20.5 cm, and a thickness of 2 mm is arranged on the surface of the peripheral portion of the support film (11).
  • (40) and the supporting film (11) are pressurized and maintained at 180 ° C. for 2 hours, so that the holding member (40) is joined to the supporting film (11). 10) Made • la
  • the obtained sheet-like probe (10) has dimensions of the contact film (12b) in the vertical and horizontal directions of the insulating film (13b) 4000 111> ⁇ 7000 111, and the thickness d of the insulating film (13b).
  • the shape of the surface electrode part (16) of the electrode structure (15) is frusto-conical, with a diameter R at the base end of 7111,
  • the diameter R is 18; ⁇ ⁇ , the protruding height h is 22 m, and the short-circuit part (18) has a truncated cone shape.
  • the diameter R force at one end on the front surface side is 7 ⁇ m
  • the diameter R force at the other end on the rear surface is 1 ⁇ 20 ⁇ m
  • the back electrode (1
  • 7) is a rectangular flat plate with a width (diameter R) of 60 ⁇ m, a vertical width of 200 ⁇ m, and a thickness D.
  • the shape of the holding part (19) is a circular ring plate, its outer diameter R is m, and its thickness is
  • sheet probe Ll sheet probe L4
  • the entire support film forming layer was removed by etching to prevent formation of the support film, and the entire holding portion forming layer was removed by etching.
  • a sheet-like probe was manufactured in the same manner as in Example 1, except that the holding portion was not formed and the holding member was provided on the surface of the peripheral portion of the insulating film.
  • the obtained sheet probe had an insulating film thickness d of 12.5 / ⁇ , a surface electrode of the electrode structure with a truncated cone shape, a base diameter of 47 m, and a tip diameter of 47 m. Is 18 m, its protruding height is 25 m, the shape of the short-circuited part is a truncated cone, the diameter of one end on the front side is 47 m, the diameter of the other end on the back side is 60 m, and the shape of the back electrode is It is a rectangular flat plate with a width of 60 ⁇ m, a vertical width of ⁇ m, and a thickness of 30 ⁇ m.
  • sheet probe Nl sheet probe N4
  • the obtained nickel particles have a number average particle size of 7.4 / zm, a variation coefficient of the particle size of 27%, a BET specific surface area of 0.46 X 10 3 m 2 Zkg, and a saturation magnetization of 0.6 Wb / m 2 Met.
  • the nickel particles are referred to as “magnetic core particles [A]”.
  • the obtained conductive particles had a number average particle diameter of 7.3 m, a BET specific surface area of 0.38 ⁇ 10 3 m 2 / kg, (mass of gold forming the coating layer) / (magnetic core particles [A ] Is 0.3).
  • conductive particles are referred to as “conductive particles (a)”.
  • this frame plate (31) In the material of this frame plate (31) is Kovar (coefficient of linear thermal expansion 5 X 10- 6 ZK), its thickness is 60 m.
  • Each of the openings (32) has a dimension of 6400 ⁇ m in the horizontal direction (the horizontal direction in FIGS. 37 and 38) and 320 ⁇ m in the vertical direction (the vertical direction in FIGS. 37 and 38).
  • a circular air inlet (33) is formed at a central position between the vertically adjacent openings (32) and has a diameter of 1000 ⁇ m.
  • the addition type liquid silicone rubber used was a two-part type composed of liquid A and liquid B each having a viscosity of 250 Pa's, and the cured product had a compression set of 5% and a durometer A hardness of 32. It has a tear strength of 25 kNZm.
  • Durometer A hardness is measured at 23 ⁇ 2 ° C according to JIS K 6249 by stacking five sheets prepared in the same manner as in (iii) above and using the obtained stack as a test piece. Values were measured.
  • each of the frame plates (31) was formed according to the method described in JP-A-2002-324600.
  • 393 anisotropic conductive sheets (35) having the configuration shown in FIG. 31 are arranged so as to close the openings (32) of the frame plate (31) and fixed and supported by the opening edges of the frame plate (31).
  • an anisotropic conductive connector was manufactured.
  • the curing treatment of the molding material layer was performed at 100 ° C. for 1 hour while applying a magnetic field of 2 T in the thickness direction with an electromagnetic stone.
  • the obtained anisotropic conductive sheet (35) was obtained.
  • each of the anisotropic conductive sheets (35) has a horizontal dimension of 7000 m and a vertical dimension of 1200 m, and 60 conductive sections (36) are arranged at a pitch of 100 m in the horizontal direction.
  • Each of the conductive parts (36) has a horizontal dimension of 40 ⁇ m, a vertical dimension of 200 ⁇ m, a thickness of 150 m, and a protrusion height of the protrusion (38). Is 25 ⁇ m, and the thickness of the insulating part (37) is 100 ⁇ m. Also, there is no gap between the outermost conductive portion (36) in the horizontal direction and the opening edge of the frame plate.
  • a conductive portion for connection is arranged.
  • Each of the conductive parts for non-connection has a lateral dimension
  • the volume fraction of all the conductive portions (36) was about 25%.
  • anisotropically conductive connector Cl anisotropically conductive connector
  • anisotropically conductive connector C12 anisotropically conductive connector C12
  • the inspection circuit board (20) is a rectangle measuring 30 cm ⁇ 30 cm overall, and its inspection electrodes have a horizontal dimension of 60 m and a vertical dimension of 200 m.
  • the obtained inspection circuit board is referred to as “inspection circuit board Tl”.
  • Test 1 insulation between adjacent electrode structures
  • the insulation between the adjacent electrode structures is determined as follows. An evaluation was performed.
  • the test wafer W1 is placed on a test table, and a sheet-like probe is placed on the surface of the test wafer W2 so that each of its surface electrodes is inspected by the test wafer W1.
  • An anisotropic conductive connector is positioned and positioned on the sheet probe so that each conductive part is positioned on the back electrode of the sheet probe.
  • the inspection circuit board T1 is positioned and arranged such that each of the inspection electrodes is positioned on the conductive portion of the anisotropically conductive connector, and further, the inspection circuit board T1.
  • T1 was pressed downward with a load of 118 kg (an average load applied to one electrode structure was about 5 g).
  • an anisotropic conductive connector was used. Then, a voltage is sequentially applied to each of the 23580 test electrodes on the test circuit board Tl, and the electric resistance between the test electrode to which the voltage is applied and another test electrode is measured by the electrode of the sheet probe. It is measured as the electrical resistance between structures (hereinafter referred to as “insulation resistance”), and the ratio of measurement points where the insulation resistance at all measurement points is 10 ⁇ ⁇ or less (hereinafter referred to as “insulation failure rate”) is determined.
  • insulation resistance the electrical resistance between structures
  • insulation failure rate the ratio of measurement points where the insulation resistance at all measurement points is 10 ⁇ ⁇ or less
  • the insulation resistance is less than 10 ⁇ ⁇ , it is practically difficult to use the integrated circuit formed on the wafer for electrical inspection.
  • test wafer W2 At room temperature (25 ° C), place the test wafer W2 on a test table equipped with an electric heater, and place a sheet-shaped probe on the surface of the test wafer W2 so that each of its surface electrodes is subjected to the test.
  • the anisotropic conductive connector is placed on the sheet-shaped probe, and each conductive part is positioned on the back electrode of the sheet-shaped probe.
  • the test circuit board T1 is positioned on the anisotropic conductive connector so that each of the test electrodes is positioned on the conductive part of the anisotropic conductive connector. And then add the inspection circuit board T1 It was pressurized downward with a load of 118 kg (the load applied to one electrode structure was about 5 g on average).
  • Table 2 was used as the anisotropic conductive connector.
  • test electrodes on the test circuit board T1 two test electrodes electrically connected to each other via a sheet probe, an anisotropic conductive connector, a test ueno, and W2.
  • the electrical resistance between the test electrodes of the test circuit board T1 and the test electrode of the test wafer W2 is referred to as 2 of the measured electrical resistance value. This was recorded as “conduction resistance”), and the ratio of measurement points that were equal to or higher than the conduction resistance at all measurement points (hereinafter, referred to as “connection failure ratio”) was determined. This operation is referred to as “operation (1)”.
  • test circuit board T1 is released, and then the test table is heated to 150 ° C and left until the temperature is stabilized, and then the test circuit board T1 is loaded downward by a load of 118 kg.
  • the load applied to one electrode structure was about 5 g on average), and the connection failure rate was determined in the same manner as in the above operation (1). This operation is referred to as “operation (2)”.
  • test table was cooled to room temperature (25 ° C.), and the pressure applied to the test circuit board T1 was released. This operation is referred to as “operation (3)”.
  • the operation (1), the operation (2) and the operation (3) were performed as one cycle, and a total of 300 cycles were continuously performed.
  • the conduction resistance is 1 ⁇ or more, it is practically difficult to use it for electrical inspection of an integrated circuit formed on a wafer.
  • the sheet-shaped probe M3, the sheet-shaped probe M4, the sheet-shaped probe L3, and the sheet-shaped probe L4 were observed.As a result, none of the electrode structures was dropped from the insulating film. High and durability were confirmed. On the other hand, for the sheet-like probe N3, 48 electrode structures out of the 23850 electrode structures dropped out of the insulating film, and for the sheet-like probe N4, 23850 electrode structures Among them, 27 electrode structures were dropped from the insulating film.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Leads Or Probes (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

Il est prévu une sonde en forme de feuille, un procédé de fabrication de la sonde et une application de la sonde, permettant de constituer une partie électrode superficielle de petit diamètre, d’obtenir un statut de connexion stable même pour un dispositif de circuit ayant une électrode de faible pas, avec une durabilité élevée en empêchant une structure d’électrode de tomber d’un film isolant, tandis que l’on peut sûrement empêcher un décalage positionnel de la structure d’électrode à partir d’une électrode du fait d’un changement de température dans un essai de vieillissement artificiel pour des plaquettes de grande surface et les dispositifs de circuit avec l’électrode de faible pas, tout en conservant un excellent statut de connexion. Il est prévu une sonde en forme de feuille avec un film de point de contact ayant un film isolant et une pluralité des structures d’électrode s'étendant dans une direction d'épaisseur du film isolant, et un film support composé de métal pour porter le film de point de contact. La structure d'électrode est composée de la partie électrode de surface avant dépassant d’une surface avant du film isolant, une partie électrode de surface arrière exposant sur une surface arrière du film isolant, une pièce de mise en court-circuit s’étendant en continu depuis un bord de base de la partie électrode de surface avant dans la direction d'épaisseur du film isolant et est connectée à la partie électrode de surface arrière, et une partie support s'étendant en continu vers l’extérieur depuis la partie de bord de base de la partie électrode de surface avant le long de la surface avant du film isolant.
PCT/JP2005/007811 2004-04-27 2005-04-25 Sonde en forme de feuille, procédé de fabrication de celle-ci et application de celle-ci WO2005103735A1 (fr)

Applications Claiming Priority (2)

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JP2004131763 2004-04-27
JP2004-131763 2004-04-27

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001208776A (ja) * 2000-01-28 2001-08-03 Toppan Printing Co Ltd 半導体検査治具及びその製造方法
JP2002076074A (ja) * 2000-09-04 2002-03-15 Hoya Corp ウエハ一括コンタクトボード用コンタクト部品及びその製造方法
JP2002289277A (ja) * 2001-03-27 2002-10-04 Jsr Corp 異方導電性コネクターおよびその応用製品

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001208776A (ja) * 2000-01-28 2001-08-03 Toppan Printing Co Ltd 半導体検査治具及びその製造方法
JP2002076074A (ja) * 2000-09-04 2002-03-15 Hoya Corp ウエハ一括コンタクトボード用コンタクト部品及びその製造方法
JP2002289277A (ja) * 2001-03-27 2002-10-04 Jsr Corp 異方導電性コネクターおよびその応用製品

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TW200540429A (en) 2005-12-16

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