Classifications

• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B24—GRINDING; POLISHING
  • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
  • B24B37/00—Lapping machines or devices; Accessories
  • B24B37/11—Lapping tools
  • B24B37/20—Lapping pads for working plane surfaces
  • B24B37/205—Lapping pads for working plane surfaces provided with a window for inspecting the surface of the work being lapped
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
  • H10P52/40—Chemomechanical polishing [CMP]
  • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials

Definitions

• the present invention relates to a polishing pad used for flattening irregularities on a wafer surface by chemical mechanical polishing (CMP). More specifically, the present invention relates to a polishing pad using an alkaline slurry or an acidic slurry. The present invention also relates to a polishing pad having a window for detecting a polishing state or the like by optical means, and a method for manufacturing a semiconductor device using the polishing pad.
• CMP chemical mechanical polishing
• CMP is a technique in which a wafer is polished with a slurry-type abrasive (hereinafter, also referred to as a slurry) in which gun particles are dispersed while a surface to be polished is pressed against a polishing surface of a polishing pad.
• a slurry-type abrasive hereinafter, also referred to as a slurry
• a polishing apparatus generally used in CMP includes a polishing platen 2 that supports a polishing pad 1, and a support table 5 (an object to be polished (wafer) 4).
• a polishing head a backing material for uniformly pressing the wafer, and a polishing agent supply mechanism.
• the polishing pad 1 is attached to the polishing platen 2 by, for example, pasting with a double-sided tape.
• the polishing platen 2 and the support base 5 are arranged so that the polishing pad 1 and the object 4 to be polished are respectively opposed to each other, and are provided with rotating shafts 6 and 7, respectively.
• the support 5 is provided with a pressing mechanism for pressing the object 4 to be polished against the polishing pad 1.
• Patent Document 1 A torque detection method that detects the coefficient of friction between a wafer and a pad as a change in the rotation torque of the wafer holding head and the surface plate (Patent Document 1)
• Patent Document 3 Optical method incorporating a film thickness monitoring mechanism using laser light in a rotating surface plate
• Patent Document 5 A method of measuring frictional heat between a wafer and a polishing pad and reaction heat between a slurry and an object to be polished with an infrared radiation thermometer (Patent Document 5)
• Patent Document 6 A method for measuring the thickness of an object to be polished by measuring the propagation time of an ultrasonic wave
• Patent Document 8 Method of measuring sheet resistance of metal film on wafer surface
• the method (1) is widely used, but the method (3) is becoming mainstream in terms of measurement accuracy and spatial resolution in non-contact measurement.
• the optical detection means of the method (3) specifically refers to an interference signal generated by irradiating a wafer with a light beam through a window (light transmission area) through a polishing pad and reflecting the light beam. This is a method of detecting the end point of polishing by monitoring the temperature.
• light beams such as He-Ne laser light having a wavelength of around 600 nm and 380 White light using a halogen lamp having a wavelength of about 800 nm is generally used.
• the end point is determined by monitoring the change in the thickness of the wafer surface layer and knowing the approximate depth of the surface irregularities. When the change in thickness becomes equal to the depth of the unevenness, the CMP process is terminated. Also, various methods have been proposed for the polishing end point detection method using such optical means and the polishing pad used in the method.
• a polishing pad having at least a portion of a solid and homogeneous transparent polymer sheet that transmits light having a wavelength of 190 nm to 3500 nm has been disclosed (Patent Document 9, Patent Document 13). Also disclosed is a polishing pad in which a stepped transparent plug is inserted (Patent Document 3). Further, a polishing pad having a transparent plug flush with a polishing surface has been disclosed (Patent Document 10). Further, the translucent member contains a water-insoluble matrix material and water-soluble particles dispersed in the water-insoluble matrix material, and has a light transmittance of 400 to 800 nm of 0.1% or more. Polishing pads have been disclosed (Patent Documents 11 and 12). It is disclosed that V and deviation are also used as a window for detecting the end point.
• a light beam such as He-Ne laser light or white light using a halogen lamp is used.
• white light When white light is used, light of various wavelengths is applied to the wafer. It has the advantage that it can be applied and many wafer surface profiles can be obtained. When this white light is used as a light beam, it is necessary to increase detection accuracy in a wide wavelength range.
• Patent Document 2 US Patent No. 5081421
• Patent document 3 JP-A-97985
• Patent Document 4 JP-A-9-36072
• Patent Document 5 U.S. Pat.No. 5,196,353
• Patent Document 6 JP-A-55-106769
• Patent Document 7 JP-A-7-135190
• Patent Document 8 US Pat. No. 5,559,428
• Patent Document 9 Japanese Patent Publication No. 11-512977
• Patent Document 10 JP-A-10-83977
• Patent Document 11 JP-A-2002-324769
• Patent Document 12 Japanese Patent Application Laid-Open No. 2002-324770
• Patent Document 13 JP-A-2003-48151
• the present invention has been made to solve the above-described problem, and even when polishing is performed using an alkaline slurry or an acidic slurry, a high-precision method is used for a long time from the start of use to the end of use.
• An object of the present invention is to provide a polishing pad capable of continuing to maintain optical endpoint detection, and a method for manufacturing a semiconductor device using the polishing node.
• the present inventor has made extensive studies in view of the above-mentioned current situation, and as a result, has found that the above problem can be solved by using the following light transmitting region as a light transmitting region for a polishing pad.
• the present invention relates to a polishing pad having a polishing region and a light transmitting region, which is used for chemical mechanical carbolishing, wherein the light transmitting region is immersed in an aqueous KOH solution of pH 11 for 24 hours.
• Another aspect of the present invention is a polishing pad used for chemical mechanical voting, having a polishing region and a light transmitting region, wherein the light transmitting region is a pH 4 H 2 O aqueous solution.
• a polishing pad characterized by being within 10% within the entire range of 700 nm.
• the degree of light transmittance at the wavelength of the measurement light to be used is important for determining the detection accuracy of the polishing end point and the measurement accuracy of the film thickness.
• the light transmission region of the present invention is the difference in light transmittance before and after immersion in the KOH aqueous solution.
• the ⁇ (%) is preferably within 9 (%). If ⁇ (%) is greater than 10 (%), the transparency of the light transmission area gradually decreases due to contact with the slurry, and high-precision optical end point detection is performed for a long time. I can't keep it.
• another light transmitting region of the present invention has a light transmittance before and after immersion in the aqueous solution.
• ⁇ (%) Within the constant wavelength range of 400 to 700 nm, it is within 10 (%), and has excellent acid resistance, so it can sufficiently withstand repeated use of acidic slurry used in polishing. Therefore, high-precision optical end point detection can be maintained for a long time from the start of use to the end of use, where the light transmission region does not gradually become cloudy or deteriorate.
• the ⁇ (%) is preferably within 9 (%), particularly preferably within 5 (%). If ⁇ (%) is greater than 10 (%), the transparency of the light transmission area gradually decreases due to contact with the acidic slurry. Can Absent.
• the light transmittance of the light transmitting region in the present invention is a value when the thickness of the light transmitting region is 1 mm or a value when converted to a thickness of 1 mm.
• the light transmittance changes according to the thickness of the light transmission region according to Lambert-Beer's law. Since the light transmittance decreases as the thickness increases, it is necessary to calculate the light transmittance when the thickness is constant.
• the material for forming the light transmitting region is preferably a non-foamed body.
• the non-foamed body can suppress the scattering of light, an accurate reflectance can be detected, and the detection accuracy of the optical end point of polishing can be improved.
• the polishing surface of the light transmitting region does not have a concavo-convex structure for holding and updating a polishing liquid. If the polishing side surface of the light transmitting region has macroscopic surface irregularities, the slurry containing additives such as abrasive grains accumulates in the concave portions, and light scattering / absorption occurs, which tends to affect the detection accuracy. Further, it is preferable that the other surface on the other side of the light transmission region also has no macro surface unevenness. If there are macroscopic surface irregularities, light scattering may occur and the detection accuracy may be affected immediately.
• the material for forming the polishing region is a fine foam.
• a groove is provided on the polishing-side surface of the polishing area.
• the average cell diameter of the fine foam is preferably 70 ⁇ m or less, more preferably 50 ⁇ m or less. If the average bubble diameter is 70 ⁇ m or less, the planarity (flatness) is good.
• the specific gravity of the fine foam is preferably from 0.5 to 1.0, more preferably from 0.7 to 0.9. If the specific gravity is less than 0.5, the surface strength of the polished area decreases, and the planarity of the object to be polished decreases. If the specific gravity is more than 1.0, the number of fine bubbles on the polished area surface decreases. Although the planarity is good, the polishing rate tends to decrease.
• the hardness of the fine foam is preferably 35 to 65 degrees in Asker D hardness, and more preferably 35 to 60 degrees. If the Asker D hardness is less than 35 degrees, the planarity of the object to be polished is reduced, and if it is greater than 65 degrees, the planarity is good. The uniformity of the object to be polished tends to decrease.
• the compression ratio of the fine foam is preferably from 0.5 to 5.0%, more preferably from 0.5 to 3.0%. If the compression ratio is within the above range, it is possible to sufficiently achieve both planarity and uniformity.
• the compression ratio is a value calculated by the following equation.
• Tl The thickness of the fine foam when a load of 30 kPa (300 g / cm 2 ) stress is maintained for 60 seconds from the no-load state on the fine foam.
• T2 The thickness of the fine foam when a 180 kPa (1800 gZcm 2 ) stress load is maintained for 60 seconds from the state of T1.
• the compression recovery rate of the fine foam is preferably 50-100%, more preferably 60-100%. If it is less than 50%, as the repetitive load exerts on the polishing region during polishing, a large change in the thickness of the polishing region appears, and the stability of the polishing characteristics tends to decrease.
• the compression recovery rate is a value calculated by the following equation.
• Compression recovery rate (%) ⁇ (T3-T2) / (T1-T2) ⁇ X100
• T1 The thickness of the fine foam when a load of 30 kPa (300 g / cm 2 ) stress is maintained for 60 seconds from no load to the fine foam.
• T2 The thickness of the fine foam when a 180 kPa (1800 gZcm 2 ) stress load is maintained for 60 seconds from the state of T1.
• T3 The thickness of the fine foam when the state force of T2 is maintained for 60 seconds with no load and then a load of 30 kPa (300 g / cm 2 ) is maintained for 60 seconds.
• the storage elasticity force at 40 ° C and 1Hz of the fine foam is preferably 150MPa or more, more preferably 250MPa or more. If the storage modulus is less than 150 MPa, the surface strength of the polished area tends to decrease, and the planarity of the object to be polished tends to decrease.
• the storage elastic modulus refers to an elastic modulus measured by applying a sine wave vibration to a fine foam using a tensile test jig with a dynamic viscoelasticity measuring device.
• the present invention also relates to a method for manufacturing a semiconductor device, comprising a step of polishing a surface of a semiconductor wafer using the polishing pad described above.
• FIG. 1 A schematic configuration diagram showing an example of a conventional polishing apparatus used in CMP polishing.
• FIG. 2 is a schematic sectional view showing an example of the polishing pad of the present invention.
• FIG. 3 is a schematic sectional view showing another example of the polishing pad of the present invention.
• FIG. 4 is a schematic sectional view showing another example of the polishing pad of the present invention.
• FIG. 5 is a schematic sectional view showing another example of the polishing pad of the present invention.
• FIG. 6 is a schematic configuration diagram showing an example of a CMP polishing apparatus having an end point detection device of the present invention.
• the polishing pad of the present invention has at least a polishing region and a light transmitting region.
• the light transmission region is the difference between the light transmittance ⁇ (%) at the measurement wavelength ⁇ after immersion in a KOH aqueous solution of pH 11 for 24 hours and the light transmittance ⁇ (%) at the measurement wavelength ⁇ before immersion. ⁇
• Another light transmission region is at a measurement wavelength ⁇ after immersion in a HO aqueous solution of pH4 for 24 hours.
• ⁇ (%) must be within 10 (%) within the entire measurement wavelength range of 400 to 700 nm.
• the material for forming the light transmitting region is not particularly limited as long as it is a material exhibiting the above-mentioned characteristics.
• polyurethane resin polyester resin, polyamide resin, acrylic resin, polycarbonate resin, halogen-based resin.
• Fats eg, polychloride butyl, polytetrafluoroethylene, polyvinylidene polyfluoride), polystyrene, olefin resins (eg, polyethylene and polypropylene), and epoxy resins. These resins may be used alone or in combination of two or more.
• a method of increasing the durability of the material used in the light transmission region with respect to the aqueous alkaline solution or the acidic aqueous solution can be considered.
• a material having low durability against an alkaline aqueous solution or an acidic aqueous solution is used, deterioration proceeds from the surface of the material, and the light transmittance is reduced.
• a forming material used for the polishing region or a material similar to the physical properties of the polishing region.
• a polyurethane resin having high abrasion resistance which can suppress light scattering in a light transmitting region due to dressing marks during polishing, is desired.
• the polyurethane resin is composed of an organic isocyanate, a polyol (high-molecular-weight polyol, low-molecular-weight polyol), and a chain extender.
• organic isocyanate examples include 2,4-toluene diisocyanate, 2,6-toluene diisocyanate, 2,2, diphenylmethane diisocyanate, 2,4, diphenylmethane diisocyanate, and 4,4.
• Diphenylmethane diisocyanate 1,5-naphthalenediisocyanate, p-phenylenediisocyanate, m-phenylenediisocyanate, p-xylylene diisocyanate, m-xylylene diisonate
• Examples thereof include cyanate, hexamethylene diisocyanate, 1,4-cyclohexanediisocyanate, 4,4, dicyclohexylmethane diisocyanate, and isophorone diisocyanate. These may be used alone or in combination of two or more.
• organic isocyanate in addition to the above-mentioned diisocyanate conjugate, a trifunctional or higher polyfunctional polyisocyanate conjugate can also be used.
• polyfunctional isocyanate conjugate a series of diisocyanate duct conjugates such as Desmodur N (manufactured by Bayer) and deuranate (manufactured by Asahi Kasei Kogyo) are commercially available. It is preferable to add these tri- or more polyisocyanate conjugates to the diisocyanate conjugate since they are liable to gel during prepolymer synthesis when used alone.
• polyester polyols represented by polytetramethylene ether glycol
• polyester polyols represented by polybutylene adipate
• polyester glycols such as polycaprolactone polyol and polycaprolactone
• alkylene polyester glycols
• Polyester polycarbonate polyols exemplified by reactants with carbonates and the like, polyester polycarbonate polyols obtained by reacting ethylene carbonate with a polyhydric alcohol, and then reacting the resulting reaction mixture with an organic dicarboxylic acid
• Polycarbonate polyol obtained by the transesterification reaction between the product and aryl carbonate is preferred.
• a polyether polyol in order to improve durability against an alkaline aqueous solution or an acidic aqueous solution, it is preferable to use a polyether polyol, a polyproprolataton polyol, a polyester polycarbonate polyol, or the like.
• a dalicol adipate system having a short methylene chain it is preferred to copolymerize with an aromatic acid.
• a high-molecular-weight polyol having no long resonance structure or a high-molecular-weight polyol having little skeleton structure having high electron-withdrawing and electron-donating properties may be used alone or in combination of two or more.
• ethylene glycol, 1,2 propylene glycol, 1,3-propylene glycol, 1,4 butanediol, 1,6 xanediol, neopentyl glycol Low molecular weight polyols such as 4-cyclohexanedimethanol, 3-methyl-1,5-pentanediol, diethylene glycol, triethylene glycol, and 1,4-bis (2-hydroxyethoxy) benzene may be used in combination!
• Examples of the chain extender include ethylene glycol, 1,2 propylene glycol, 1,3 propylene glycol, 1,4 butanediol, 1,6 xandiol, and neopentylglycol.
• Low molecular weight polyols such as diol, 1,4-cyclohexanedimethanol, 3-methyl-1,5 pentanediol, ethylene glycol, triethylene glycol, 1,4-bis (2-hydroxyethoxy) benzene, 4 Toluenediamine, 2,6 Toluenediamine, 3,5 Jethyl-2,4-Toluenediamine, 4,4, -G sec-Butyldiaminodiphenylmethane, 4,4, Diaminodiphenylmethane, 3,3,1-Dichloro- 4,4, Diaminodiphenyl methane, 2,2 ', 3,3'-tetrachloro-4,4'diaminodiphenylmethane, 4,4
• polyamines are often colored by themselves or the resin using them is often colored, so that it is preferable to mix them to such an extent that physical properties and light transmittance are not impaired.
• a compound having an aromatic hydrocarbon group when used, the light transmittance on the short wavelength side tends to decrease. Therefore, it is particularly preferable not to use such a compound.
• Compounds in which an electron-donating group such as a halogen group or a thio group or an electron-withdrawing group is bonded to an aromatic ring or the like tend to decrease light transmittance. It is particularly preferred that they are not present. However, they may be blended to such an extent that the light transmittance required on the short wavelength side is not impaired.
• the ratio of the organic isocyanate, polyol, and chain extender in the polyurethane resin can be appropriately changed depending on the molecular weight of each, the desired physical properties of the light transmitting region produced therefrom, and the like.
• the number of isocyanate groups of the organic isocyanate to the total number of functional groups (hydroxyl group + amino group) of the polyol and the chain extender is preferably 0.95-1.15. More preferably, it is 0.99-1.10.
• the polyurethane resin is produced by applying a known urethane dipping technique such as a melting method or a solution method. Although it can be manufactured, it is preferable to manufacture it by a melting method in consideration of cost, working environment, and the like.
• the procedure for polymerizing the polyurethane resin can be either the pre-polymer method or the one-shot method.
• the isocyanate-terminated prepolymer having an organic isocyanate and a polyol is also synthesized in advance, and a chain extender is reacted with this.
• the prebolimer method is preferred.
• Organic isocyanate and polyol power The isocyanate-terminated prepolymers produced are commercially available. If they are compatible with the present invention, they can be used to synthesize polyurethane resin by the prepolymer method. .
• the method for producing the light transmitting region is not particularly limited, and it can be produced by a known method.
• a method of making a block of polyurethane resin produced by the above method into a predetermined thickness using a band saw type or canner type slicer, a method of pouring resin into a mold having a cavity of a predetermined thickness and curing, a coating technique examples include a method using sheet forming technology.
• the gas contained in the material is sufficiently removed by reducing the pressure to 10 Torr or less before mixing the material in order to remove such bubbles.
• stirring is preferably performed at a rotation speed of 100 rpm or less so that air bubbles are not mixed in the stirring step after mixing. It is also preferable that the stirring step is performed under reduced pressure.
• the rotation-revolution type mixer does not easily mix bubbles even at a high rotation speed, it is also a preferable method to perform stirring and defoaming using the mixer.
• the shape and size of the light transmitting region are not particularly limited, but are preferably the same shape and size as the opening of the polishing region.
• the thickness of the light transmitting region is preferably 0.5-4 mm, more preferably 0.6-3.
• the light transmitting region has the same thickness as or less than the thickness of the polishing region. If the light transmitting region is thicker than the polished region, there is a possibility that the wafer may be damaged by protruding portions during polishing. On the other hand, if it is too thin, the durability becomes insufficient.
• a commonly used polishing apparatus has an emission wavelength around 500-700 nm. Since a laser is used, the light transmittance in the wavelength region is preferably 80% or more. In that case, high reflected light can be obtained, and the end point detection accuracy and the film thickness detection accuracy can be improved. The light transmittance in the wavelength region is more preferably 90% or more.
• the structure of each resin has an absorption band for light having a wavelength of 500 to 700 nm. It is preferable to eliminate the skeleton, or to mix them to such an extent that the required light transmittance is not impaired. Another measure is to reduce the length of resonance, which is the flow of electrons in the direction of the molecular chain in each resin. This is because even if the skeleton of each monomer constituting the resin does not have a large absorption in the above wavelength region, the polymerization of each monomer leads to the development of a resonance structure that is a flow of electrons in the direction of the molecular chain.
• a resin chain having high strength such as a polymer chain having flexibility, a polymer chain having a bulky functional group, or a polymer chain not containing many skeletons having high electron withdrawing and electron donating properties. ,.
• the change rate of the light transmittance at a measurement wavelength of 400 to 700 nm represented by the following formula is preferably 50 (%) or less, more preferably 25 (%). %)
• Rate of change (%) ⁇ (maximum light transmittance at 400-700nm 400m minimum light transmittance at 400-700nm) Z400-maximum light transmittance at 700nm ⁇ X 100
• the light transmitting region preferably has a light transmittance at a measurement wavelength of 400 nm of 20% or more, more preferably 50% or more, before immersion. If the light transmittance at a wavelength of 400 nm is 20% or more, a laser having an emission wavelength in the vicinity of 400 to 700 nm can be used, and more wafer surface profiles can be obtained. Accuracy and film thickness measurement accuracy can be further improved.
• the difference between the respective light transmittances at a measurement wavelength of 500 to 700 nm is preferably within 5 (%), more preferably within 3 (%). . If the difference in light transmittance at each wavelength is within 5 (%), it is possible to irradiate the wafer with a certain amount of incident light and to calculate the accurate reflectance when analyzing the film thickness of the wafer. Outgoing accuracy can be increased.
• the variation in the thickness of the light transmission region is preferably 100 m or less, more preferably 50 ⁇ m or less. If the thickness variation exceeds 100 ⁇ m, the surface will have a large undulation, and a portion where the contact state with the wafer differs will tend to affect the polishing characteristics.
• a method of suppressing the thickness variation there is a method of puffing a sheet surface having a predetermined thickness. Puffing is preferably performed stepwise using abrasive sheets having different particle sizes. When the light transmitting region is to be puffed, the smaller the surface roughness, the better. When the surface roughness is large, incident light is irregularly reflected on the surface of the light transmitting area, so that the light transmittance is reduced and the detection accuracy tends to be reduced.
• the material for forming the polishing region can be used without any particular limitation as long as it is generally used as a material for the polishing layer.
• a fine foam By using a fine foam, the slurry can be held in the bubble portion on the surface, and the polishing rate can be increased.
• Examples of the material for forming the polishing region include polyurethane resin, polyester resin, polyamide resin, acrylic resin, polycarbonate resin, and halogen-based resin (such as polychloride resin and polytetrafluoro resin). Ethylene, polyvinylidene fluoride, etc.), polystyrene, olefin resin (polyethylene, polypropylene, etc.), epoxy resin, and photosensitive resin. These may be used alone or in combination of two or more.
• the material for forming the polishing region may be the same as or different from the light transmitting region, but is used for the light transmitting region.
• Polyurethane resin has excellent abrasion resistance, and a polymer having desired physical properties can be easily obtained by variously changing the raw material composition. It is a good material.
• the polyurethane resin comprises an organic isocyanate, a polyol (high molecular weight polyol, low molecular weight polyol), and a chain extender.
• the organic isocyanate used is not particularly limited, and examples thereof include the above-mentioned organic isocyanates.
• the high molecular weight polyol used is not particularly limited, and examples thereof include the high molecular weight polyols.
• the number average molecular weight of these high molecular weight polyols is not particularly limited, but is preferably from 500 to 2000 from the viewpoint of the elastic properties of the obtained polyurethane. If the number average molecular weight is less than 500, the polyurethane using this will not have sufficient elastic properties and will be a brittle polymer. As a result, the polishing pad that also produces this polyurethane force becomes too hard and causes scratches on the wafer surface. Further, it is easy to wear, which is not preferable from the viewpoint of pad life. On the other hand, if the number average molecular weight exceeds 2,000, the polyurethane using the same will tend to be too soft, and the polishing pad produced with this polyurethane force will also tend to have poor flattening characteristics.
• the polyol it is preferable to use the low-molecular-weight polyol in combination with the high-molecular-weight polyol.
• the ratio of the high-molecular-weight polyol to the low-molecular-weight polyol in the polyol is determined by the characteristics required for the polishing region produced from these powers.
• chain extender examples include 4,4, -methylenebis (o-chloroa-line), 2,6-dichloro-p-phenylenediamine, 4,4, -methylenebis (2,3-dichloroa-line) and the like. And the low-molecular-weight polyols described above. These may be used alone or in combination of two or more.
• the ratio of the organic isocyanate, polyol, and chain extender in the polyurethane resin can be variously changed depending on the molecular weight of each, the desired physical properties of the polishing region produced therefrom, and the like.
• the number of isocyanate groups of the organic isocyanate to the total number of functional groups (hydroxyl groups + amino groups) of the polyol and the chain extender is preferably 0.95 to 1.15. More preferably, it is 0.99-1.10.
• the polyurethane resin can be produced by the same method as the above method.
• a stabilizer such as an antioxidant, a surfactant, a lubricant, a pigment, a filler, an antistatic agent, and other additives may be added to the polyurethane resin.
• the method for finely foaming the polyurethane resin is not particularly limited, and examples thereof include a method of adding a hollow bead, a method of foaming by a mechanical foaming method, a method of foaming by a chemical foaming method, and the like. .
• the above methods may be used in combination, but a mechanical foaming method using a silicone-based surfactant which is a copolymer of polyalkylsiloxane and polyester and has no active hydrogen group is particularly preferable.
• a silicone-based surfactant which is a copolymer of polyalkylsiloxane and polyester and has no active hydrogen group is particularly preferable.
• SH-192 manufactured by Toray Dow Koung Silicon
• the method for producing a strong polyurethane foam includes the following steps.
• a silicone-based surfactant is added to the isocyanate-terminated prepolymer and stirred with a non-reactive gas to disperse the non-reactive gas as fine bubbles to form a foam dispersion. If the isocyanate-terminated prepolymer is solid at room temperature, preheat it to an appropriate temperature and melt it before use.
• a chain extender is added to the above foam dispersion and mixed and stirred.
• the isocyanate-terminated prepolymer blended with a chain extender is cast and heat cured.
• the non-reactive gas used to form the microbubbles is preferably a non-flammable gas. Specifically, nitrogen, oxygen, carbon dioxide, a rare gas such as helium or argon, or a rare gas such as these. A mixed gas is exemplified, and the use of air that has been dried to remove moisture is most preferable in terms of cost.
• a stirrer for dispersing the non-reactive gas into microbubbles in an isocyanate-terminated prepolymer containing a silicone-based surfactant a known stirrer can be used without particular limitation.
• a homogenizer examples include a dissolver and a two-axis planetary mixer (planetary mixer).
• the shape of the stirring blade of the stirring device is not particularly limited. Force It is preferable to use a Whitsper type stirring blade because fine bubbles can be obtained.
• stirring devices are used for the stirring for preparing the bubble dispersion liquid in the stirring step and for the stirring for adding and mixing the chain extender in the mixing step.
• a stirrer that does not include large bubbles even if the stirring in the mixing step is not a stirring for forming bubbles.
• a planetary mixer is suitable. Even if the same stirring device is used for the stirring step and the mixing step, it does not hinder the use of the same stirring device. It is also preferable to adjust the stirring conditions such as adjusting the rotation speed of the stirring blade as necessary.
• the method for producing a polyurethane fine foam heating and post-curing the foam that has reacted until the foam dispersion has flowed into the mold until the foam no longer flows improves physical properties of the foam. It is effective and very suitable.
• the bubble dispersion may be poured into a mold and immediately placed in a heating oven for post-curing.Under such conditions, heat is not immediately transferred to the reaction components, so the bubble diameter increases. That is,.
• the curing reaction is preferably performed at normal pressure because the bubble shape is stabilized.
• a known catalyst for promoting a urethane reaction such as a tertiary amine-based or organotin-based catalyst may be used.
• the type and addition amount of the catalyst are selected in consideration of the flow time during which the mixture is poured into a mold having a predetermined shape after the mixing step.
• each component is measured and charged into a container and stirred may be used, or each component and a non-reactive gas may be continuously supplied to a stirrer.
• a continuous production method in which a molded product is manufactured by sending out a bubble dispersion liquid with stirring may be used.
• the polishing region to be the polishing layer is manufactured by cutting the polyurethane foam produced as described above into a predetermined size.
• the polishing region of the present invention is preferably provided with a groove for holding and renewing the slurry on the polishing side surface in contact with the wafer.
• the polishing area is formed of fine foam, it has many openings on the polishing surface and has the function of holding the slurry.However, in order to further maintain the slurry and efficiently renew the slurry, Also, in order to prevent destruction of the wafer due to adsorption to the wafer, it is preferable to have a groove on the polishing side surface.
• the grooves are not particularly limited as long as they hold and renew the slurry.
• XY Lattice grooves concentric grooves, through holes, holes that do not penetrate, polygonal columns, cylinders, spiral grooves, eccentric circular grooves, radial grooves, and combinations of these grooves.
• the groove pitch, groove width, groove depth, and the like are not particularly limited, and are appropriately selected and formed. In addition, these grooves are generally regular.To make slurry retention / renewal desirable, the groove pitch, groove width, groove depth, etc. may be changed in a certain range. It is possible.
• the method of forming the groove is not particularly limited.
• a method of mechanical cutting using a jig such as a tool having a predetermined size, or a method of applying a resin to a mold having a predetermined surface shape.
• a method of forming by using the laser beam is used.
• the thickness of the polished area is not particularly limited, but is about 0.8 to 4 mm.
• a method of producing the polishing region of the thickness a method of making the block of the fine foam into a predetermined thickness using a band saw type or a canner type slicer, and applying a resin to a mold having a cavity of a predetermined thickness. Examples include a method of casting and curing, and a method using a coating technique and a sheet forming technique.
• the variation in the thickness of the polishing region is preferably 100 ⁇ m or less, and particularly preferably 50 ⁇ m or less. If the thickness variation exceeds 100 m, the polished area has a large undulation, and there is a portion where the contact state with the wafer is different, which tends to adversely affect the polishing characteristics.
• the force of dressing the surface of the polished region at the initial stage of polishing using a dresser in which diamond granules are electrodeposited or fused is prolonged and production efficiency is reduced.
• a method of suppressing the variation in thickness there is a method of puffing the surface of a polishing region having a predetermined thickness. When performing puffing, it is preferable to perform stepwise with polishing sheets having different particle sizes.
• the method for producing the polishing pad having the polishing region and the light transmitting region is not particularly limited, and various methods are conceivable. A specific example will be described below. In the following specific examples, a polishing pad provided with a cushion layer is described. However, polishing is performed without providing a cushion layer. It may be a pad.
• a polishing area 9 opened to a predetermined size is bonded to a double-sided tape 10, and the polishing area 9 is adjusted to the opening of the polishing area 9 thereunder. Then, the cushion layer 11 opened to a predetermined size is attached. Next, a double-sided tape 12 with a release paper 13 is adhered to the cushion layer 11, a light transmitting region 8 is fitted into an opening of the polishing region 9, and the two are laminated.
• a polishing area 9 opened to a predetermined size is bonded to a double-sided tape 10, and a cushion layer 11 is bonded thereunder.
• the double-sided tape 10 and the cushion layer 11 are opened to a predetermined size so as to match the opening of the polishing area 9.
• a double-sided tape 12 with a release paper 13 is attached to the cushion layer 11, the light transmitting region 8 is fitted into the opening of the polishing region 9, and the bonding is performed.
• a polishing area 9 opened to a predetermined size is bonded to a double-sided tape 10, and a cushion layer 11 is bonded thereunder.
• a double-sided tape 12 with a release paper 13 is adhered to the opposite surface of the cushion layer 11, and then a predetermined size from the double-sided tape 10 to the release paper 13 is set so as to match the opening of the polishing area 9.
• Open to This is a method in which the light transmitting region 8 is fitted into the opening of the polishing region 9 and bonded. Note that, in this case, the opposite side of the light transmission region 8 is opened, and there is a possibility that dust or the like may accumulate. Therefore, it is preferable to attach a member 14 that closes the dust or the like.
• the cushion layer 11 to which the double-sided tape 12 with the release paper 13 is attached is opened to a predetermined size.
• the polishing area 9 opened to a predetermined size is bonded to the double-sided tape 10, and these are bonded so that the openings are aligned.
• the light transmitting region 8 is fitted into the opening of the polishing region 9 and bonded.
• the opposite side of the polishing area is opened, and there is a possibility that dust or the like accumulates. Therefore, it is preferable to attach a member 14 for closing the area.
• the means for opening the polishing area and the cushion layer is not particularly limited.
• a jig having a cutting ability is pressed to open.
• Method a method using a laser such as a carbon dioxide laser, and a method of grinding with a jig such as a cutting tool.
• the size and shape of the opening in the polishing area are There is no particular limitation.
• the cushion layer supplements the characteristics of the polishing area (polishing layer).
• the cushion layer is necessary for CMP to balance both planarity and uformity, which are in a trade-off relationship.
• the planarity refers to the flatness of a pattern portion when a wafer having minute irregularities generated during pattern formation is polished, and the u-formity refers to the uniformity of the entire wafer. Planarity is improved by the characteristics of the polishing layer, and u-formity is improved by the characteristics of the cushion layer.
• the material for forming the cushion layer is not particularly limited, and examples thereof include a resin non-woven fabric such as a polyester non-woven fabric, a nylon non-woven fabric, and an acrylic non-woven fabric; a resin-impregnated non-woven fabric such as a polyester non-woven fabric impregnated with polyurethane; And high molecular resin foams, rubber resins such as butadiene rubber and isoprene rubber, and light-sensitive resins.
• a resin non-woven fabric such as a polyester non-woven fabric, a nylon non-woven fabric, and an acrylic non-woven fabric
• a resin-impregnated non-woven fabric such as a polyester non-woven fabric impregnated with polyurethane
• high molecular resin foams rubber resins such as butadiene rubber and isoprene rubber, and light-sensitive resins.
• polishing layer used in the polishing region 9 and the cushion layer 11 for example, there is a method in which the polishing region and the cushion layer are sandwiched between double-sided tapes and pressed.
• the double-sided tape has a general configuration in which adhesive layers are provided on both surfaces of a substrate such as a nonwoven fabric or a film. It is preferable to use a film as the base material in consideration of preventing the penetration of the slurry into the cushion layer and the like.
• the composition of the adhesive layer include a rubber-based adhesive and an acrylic adhesive. Considering the content of metal ions, an atalylic adhesive is preferable because of its low content of metal ions. Further, since the composition of the polishing region and the cushion layer may be different, it is possible to optimize the adhesive strength of each layer by making the composition of each adhesive layer of the double-sided tape different.
• the double-sided tape has a general configuration in which an adhesive layer is provided on both surfaces of a base material such as a nonwoven fabric or a film as described above. In consideration of peeling off the platen force after the use of the polishing pad, it is preferable to use a film as the base material because tape remaining can be eliminated.
• the composition of the adhesive layer is the same as described above.
• the member 14 is not particularly limited as long as it closes the opening. However, when polishing, it must be peelable.
• a semiconductor device is manufactured through a step of polishing a surface of a semiconductor wafer using the polishing pad.
• a semiconductor wafer is generally obtained by laminating a wiring metal and an oxide film on a silicon wafer.
• the method and apparatus for polishing a semiconductor wafer are not particularly limited. For example, as shown in FIG. 1, a polishing platen 2 supporting a polishing pad 1, a support table 5 (polishing head) supporting a semiconductor wafer 4, and a wafer The polishing is performed using a backing material for uniformly pressurizing the wafer, a polishing apparatus having a supply mechanism of the polishing agent 3, or the like.
• the polishing pad 1 is attached to the polishing platen 2 by, for example, sticking with a double-sided tape.
• the polishing platen 2 and the support table 5 are arranged so that the polishing pad 1 and the semiconductor wafer 4 supported respectively face each other, and are provided with rotating shafts 6 and 7, respectively. Further, a pressure mechanism for pressing the semiconductor wafer 4 against the polishing pad 1 is provided on the support base 5 side. At the time of polishing, the semiconductor wafer 4 is pressed against the polishing pad 1 while rotating the polishing table 2 and the support table 5, and polishing is performed while supplying a slurry having an alkaline force.
• the flow rate of the slurry, the polishing load, the number of rotations of the polishing platen, and the number of rotations of the wafer are not particularly limited, and are appropriately adjusted.
• semiconductor devices are manufactured by dicing, bonding, knocking, and the like. Semiconductor devices are used for arithmetic processing units, memories, and the like.
• the prepared light transmitting region member was cut out into a size of 2 cm ⁇ 6 cm (thickness: arbitrary) to obtain a light transmittance measuring sample.
• a spectrophotometer manufactured by Hitachi, Ltd., U-3210 Spectro Photometer
• measurement was performed in a measurement wavelength range of 400 to 700 nm.
• the measurement results of these light transmittances were converted to light transmittances with a thickness of lmm using Lambert-Beer's law.
• the prepared light transmission area member was cut out to a size of 2 cm x 6 cm (thickness: any) to obtain a light transmittance measurement sample, which was adjusted to pH 11 l with a KOH aqueous solution (50 ml, 60 ° C) or pH4 It was immersed in an aqueous HO solution (50 ml, 60 ° C) adjusted for 24 hours for 24 hours. Then remove the sample
• the aqueous solution on the surface was wiped off, and the measurement was performed in the measurement wavelength range of 400 to 70 Onm using the above-mentioned spectrophotometer.
• the measurement results of these light transmittances were converted into light transmittances having a thickness of lmm using Lambert-Beer's law.
• ⁇ (%) was calculated from the 10 difference.
• the measurement wavelength range was 400 to 700 nm, and the evaluation was performed using each light transmittance at 700, 600, 500, and 400 nm as the measurement wavelength.
• a polishing area cut in parallel with a microtome cutter as thin as possible to a thickness of about lmm was used as a sample for measuring the average bubble diameter.
• the sample was fixed on a slide glass, and the average bubble diameter was calculated by measuring the total bubble diameter in an arbitrary 0.2 mm X O. 2 mm range using an image processing device (Toyobo Co., Ltd., Image Analyzer V10). did.
• Tl Thickness of the polishing layer when a load of 30 kPa (300 g / cm 2 ) stress is maintained for 60 seconds from no load on the polishing layer
• T2 Thickness of polishing layer when 180kPa (1800gZcm 2 ) stress is maintained for 60 seconds from T1
• Compression recovery rate (%) ⁇ (T3-T2) / (T1-T2) ⁇ X 100
• T1 Thickness of the polishing layer when a load of 30 kPa (300 g / cm 2 ) stress is maintained for 60 seconds from no load on the polishing layer
• T2 Thickness of polishing layer when 180kPa (1800gZcm 2 ) stress is maintained for 60 seconds from T1
• T3 Thickness of the polishing layer when the state force of T2 is maintained for 60 seconds with no load, and then a load of 30 kPa (300 g / cm 2 ) is maintained for 60 seconds.
• Optical detection evaluation A of the film thickness of the wafer was performed by the following method.
• As the wafer an 8-inch silicon wafer on which a thermal oxidation film was formed in a thickness of 1 ⁇ m was used, on which the light transmission region (thickness: 1.25 mm) before the immersion was first set.
• an interference type film thickness measuring device manufactured by Otsuka Electronics Co., Ltd.
• the film thickness was measured several times in a wavelength region of 400 to 700 nm. The results of the calculated film thickness and the conditions of the peaks and valleys of the interference light at each wavelength were confirmed, and the film thickness detection in the light transmitting region before immersion was evaluated based on the following criteria.
• the change in film thickness detection before and after immersion in the KOH aqueous solution or HO aqueous solution was evaluated based on the following criteria.
• Optical detection evaluation B of the film thickness of the wafer was performed by the following method.
• As the wafer an 8-inch silicon wafer on which a thermal oxidation film was formed in a thickness of 1 ⁇ m was used, on which the light transmission region (thickness: 1.25 mm) before the immersion was first set.
• the film thickness was measured several times at a wavelength of 633 nm using an interference type film thickness measuring device using a He-Ne laser.
• the results of the calculated film thickness and the conditions of the peaks and valleys of the interference light at each wavelength were confirmed, and the film thickness detection in the light transmitting region before immersion was evaluated based on the following criteria. Thereafter, a light transmission region after the immersion was provided, and the same measurement was performed.
• KOH aqueous solution or H 2 O aqueous solution KOH aqueous solution or H 2 O aqueous solution
• Reproducibility is poor before and after immersion. Film thickness is detected by immersion in KOH aqueous solution or H 2 O aqueous solution.
• polishing characteristics were evaluated using the prepared polishing pad.
• the polishing rate was such that a 1 ⁇ m thick thermally oxidized film formed on an 8-inch silicon wafer was polished to about 0.5 ⁇ m, and the time force at this time was also calculated.
• An interference type film thickness measuring device (manufactured by Otsuka Electronics Co., Ltd.) was used for measuring the film thickness of the oxidized film.
• a silica slurry (SS12, manufactured by Cabot) was added as an alkaline slurry at a flow rate of 150 ml / min during polishing.
• the polishing load was 350 g / cm 2 , the rotation speed of the polishing platen was 35 rpm, and the rotation speed of the wafer was 30 rpm.
• the in-plane uniformity was evaluated by measuring the in-plane film thickness of the polished wafer at 28 points, and calculating the in-plane uniformity by the following formula. The more uniform the in-plane uniformity is, the better the value is.
• In-plane uniformity (%) ⁇ (maximum thickness-minimum thickness) Z (maximum thickness + minimum thickness) ⁇ X 100 [Preparation of polishing area]
• a reaction vessel 100 parts by weight of the filtered prepolymer and 3 parts by weight of a filtered silicone-based non-ionic surfactant (SH192, manufactured by Dow Silicone Toray Co., Ltd.) are mixed, and the temperature is adjusted to 80 ° C. did. Using a stirring blade, the mixture was vigorously stirred at a rotation speed of 900 rpm for about 4 minutes so as to capture bubbles in the reaction system. Thereto was added 26 parts by weight of 4,4′-methylenebis (o-chloroaline) (Ihara Chemical Co., Ltd., Iharakyuamine MT), which was previously melted at 120 ° C. and filtered.
• SH192 a filtered silicone-based non-ionic surfactant
• the sheet is punched to a specified diameter (61cm) and concentric grooves with a groove width of 0.25mm, a groove pitch of 1.50mm and a groove depth of 0.40mm are formed on the surface using a groove processing machine (manufactured by Toho Steel Machinery Co., Ltd.). Processing was performed. Using a laminating machine, apply double-sided tape (double tack tape, manufactured by Sekisui Chemical Co., Ltd.) to the surface opposite to the grooved surface of this sheet, and then shine light at a predetermined position on the grooved sheet. A hole (thickness: 1.27 mm, 57.5 mm ⁇ 19.5 mm) for inserting the transmission area was punched out to produce a polished area with double-sided tape.
• double-sided tape double tack tape, manufactured by Sekisui Chemical Co., Ltd.
• the physical properties of the polished region thus prepared were an average cell diameter of 45 m, a specific gravity of 0.86, an Asker D hardness of 53 degrees, a compressibility of 1.0%, a compression recovery of 65.0%, and a storage modulus of 275 MPa.
• Production Example A-1 was prepared except that the weight was changed to 89 parts by weight of polyester polyol (number average molecular weight 2000) and 31 parts by weight of 1,4 butanediol, which were adipic acid, hexanediol and ethylene glycol.
• a light-transmitting region (length 57 mm, width 19 mm, thickness 1.25 mm) was prepared in the same manner as in Example A-1.
• Production example A-3 In Production Example A-1, 75 parts by weight of polytetramethylene glycol (number average molecular weight: 890) was used instead of polyester polyol, and the amount of 1,4-butanediol was changed to 28 parts by weight.
• a light transmitting region (length 57 mm, width 19 mm, thickness 1.25 mm) was prepared in the same manner as in Production Example A-1.
• Production Example A-1 was prepared in the same manner as in Production Example A-1, except that the polyester polyol was changed to 120 parts by weight of polyhydric prolatatone polyol (number average molecular weight: 2000) and 31 parts by weight of 1,4-butanediol.
• a light transmission area (length 57 mm, width 19 mm, thickness 1.25 mm) was prepared in the same manner as in —1.
• Production Example A-1 120 parts by weight of a polyester polyol composed of adipic acid and ethylene glycol (number average molecular weight 2000) instead of adipic acid, hexanediol and a polyester polyol having ethylene glycol power, and A light transmitting region (length 57 mm, width 19 mm, thickness 1.25 mm) was prepared in the same manner as in Production Example A-1 except that the amount was changed to 31 parts by weight of 1,4 butanediol. [0122] Production example A-7
• a laminating machine was applied to the adhesive surface of the polishing area with the double-sided tape prepared above, with a cushion layer made of puffed surface and corona-treated polyethylene foam (made by Toray clay, Toray reef, thickness: 0.8 mm). And bonded together. Furthermore, a double-sided tape was attached to the surface of the cushion layer. After that, the cushion layer was punched out in a size of 51 mm ⁇ 13 mm in the hole portion punched in order to fit the light transmission region of the polishing region, and the hole was penetrated. Thereafter, the light-transmitting region produced in Production Example A1 was fitted, and a polishing pad was produced. Table 1 shows the polishing characteristics and the like of the prepared polishing pad.
• Example A-2 Using the light-transmitting region prepared in Production Example A-2, a polishing pad was produced in the same manner as in Example A-1. Table 1 shows the polishing characteristics and the like of the produced polishing pad.
• Example A-3 Using the light transmitting region prepared in Production Example A-3, a polishing pad was produced in the same manner as in Example A-1. Table 1 shows the polishing characteristics and the like of the produced polishing pad.
• Example A-4 Using the light transmitting region prepared in Production Example A-4, a polishing pad was produced in the same manner as in Example A-1. Table 1 shows the polishing characteristics and the like of the produced polishing pad.
• Example A-5 Using the light transmitting region prepared in Production Example A-5, a polishing pad was produced in the same manner as in Example A-1. Table 1 shows the polishing characteristics and the like of the produced polishing pad.
• Example A-7 Using the light transmitting region produced in Production Example A-7, a polishing pad was produced in the same manner as in Example A-1. Table 1 shows the polishing characteristics and the like of the produced polishing pad.
• Production example B-1 Production was carried out except that the polyester polyol consisting of adipic acid, hexanediol and ethylene glycol (number average molecular weight 1720) was changed to 89 parts by weight, and 1,4 butanediol was changed to 31 parts by weight.
• a light transmitting region (length 57 mm, width 19 mm, thickness 1.25 mm) was prepared in the same manner as in Example B-1.
• Preparation Example B-1 except that 75 parts by weight of polytetramethylene glycol (number average molecular weight 890) was used instead of the polyester polyol, and the amount of 1,4-butanediol was changed to 28 parts by weight.
• a light transmitting region (length 57 mm, width 19 mm, thickness 1.25 mm) was produced in the same manner as in Production Example B-1.
• Production Example B-1 in place of polyester polyol, changed to 120 parts by weight of polyproprolataton polyol (number average molecular weight: 2000) and 31 parts by weight of 1,4-butanediol A light-transmitting region (length 57 mm, width 19 mm, thickness 1.25 mm) was produced in the same manner as in Production Example B-1 except for the above.
• Production Example B-1 120 parts by weight of a polyester polyol composed of adipic acid and ethylene glycol (number average molecular weight 2000) instead of the polyester polyol composed of adipic acid, hexanediol and ethylene glycol, and A light-transmitting region (length 57 mm, width 19 mm, thickness 1.25 mm) was prepared in the same manner as in Production Example B-1, except that the amount was changed to 31 parts by weight of 1,4 butanediol.
• Example B-1 A laminating machine was applied to the adhesive surface of the polishing area with the double-sided tape prepared above, with a cushion layer made of puffed surface and corona-treated polyethylene foam (made by Toray clay, Toray reef, thickness: 0.8 mm). And bonded together. Furthermore, a double-sided tape was attached to the surface of the cushion layer. After that, the cushion layer was punched out in a size of 51 mm ⁇ 13 mm in the hole portion punched in order to fit the light transmission region of the polishing region, and the hole was penetrated. Thereafter, the light-transmitting region produced in Production Example B1 was fitted to produce a polishing pad. Table 2 shows the polishing characteristics and the like of the manufactured polishing pad.
• Example B-2 Using the light transmitting region prepared in Production Example B-2, a polishing pad was produced in the same manner as in Example B-1. Table 2 shows the polishing characteristics and the like of the manufactured polishing pad.
• Example B-3 Using the light transmitting region prepared in Production Example B-3, a polishing pad was produced in the same manner as in Example B-1. Table 2 shows the polishing characteristics and the like of the manufactured polishing pad.
• Example B-4 Using the light transmitting region prepared in Production Example B-4, a polishing pad was produced in the same manner as in Example B-1. Table 2 shows the polishing characteristics and the like of the manufactured polishing pad.
• Example B-5 Using the light transmitting region prepared in Production Example B-5, a polishing pad was produced in the same manner as in Example B-1. Table 2 shows the polishing characteristics and the like of the manufactured polishing pad.
• Example B-6 Using the light-transmitting region produced in Production Example B-6, a polishing pad was produced in the same manner as in Example B-1. Table 2 shows the polishing characteristics and the like of the manufactured polishing pad.
• Example B-7 Using the light-transmitting region produced in Production Example B-7, a polishing pad was produced in the same manner as in Example B-1. Table 2 shows the polishing characteristics and the like of the manufactured polishing pad.
• Example B 1 Example B—2 Example B—3 Example B—4 Reference Example B—1 Comparative Example B—1 Reference Example B—2
• the polishing pad of the present invention is used when the unevenness of the wafer surface is flattened by chemical mechanical polishing (CMP). More specifically, in the CMP using an alkaline slurry or an acidic slurry, the polishing condition and the like are optically measured. It is used to detect by means.
• CMP chemical mechanical polishing

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