WO2005071757A3 - Halbleiterbauelement mit temporärem feldstoppbereich und verfahren zu dessen herstellung - Google Patents

Halbleiterbauelement mit temporärem feldstoppbereich und verfahren zu dessen herstellung Download PDF

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Publication number
WO2005071757A3
WO2005071757A3 PCT/DE2005/000093 DE2005000093W WO2005071757A3 WO 2005071757 A3 WO2005071757 A3 WO 2005071757A3 DE 2005000093 W DE2005000093 W DE 2005000093W WO 2005071757 A3 WO2005071757 A3 WO 2005071757A3
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor component
production
stopping area
temporary field
temporarily
Prior art date
Application number
PCT/DE2005/000093
Other languages
English (en)
French (fr)
Other versions
WO2005071757A2 (de
Inventor
Hans-Joachim Schulze
Josef Lutz
Original Assignee
Infineon Technologies Ag
Hans-Joachim Schulze
Josef Lutz
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag, Hans-Joachim Schulze, Josef Lutz filed Critical Infineon Technologies Ag
Priority to US10/587,413 priority Critical patent/US7696605B2/en
Publication of WO2005071757A2 publication Critical patent/WO2005071757A2/de
Publication of WO2005071757A3 publication Critical patent/WO2005071757A3/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/063—Reduced surface field [RESURF] pn-junction structures
    • H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
    • H01L29/32—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/868—PIN diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Composite Materials (AREA)
  • Thyristors (AREA)
  • Element Separation (AREA)
  • Recrystallisation Techniques (AREA)
  • Bipolar Transistors (AREA)

Abstract

Die Erfindung betrifft ein Halbleiterbauelement mit einem temporär vergrabenen temporär n-dotierten Bereich (9), der nur beim Abschalten vom leitenden in den sperrenden Zustand des Halbleiterbauelementes wirksam ist und ein Abreißen des Tailstromes verhindert, um so die Weichheit des Abschaltens zu verbessern. Dieser temporär wirksame Bereich wird durch Implantation von K-Zentren (Z) geschaffen.
PCT/DE2005/000093 2004-01-27 2005-01-24 Halbleiterbauelement mit temporärem feldstoppbereich und verfahren zu dessen herstellung WO2005071757A2 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US10/587,413 US7696605B2 (en) 2004-01-27 2005-01-24 Semiconductor component comprising a temporary field stopping area, and method for the production thereof

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102004004045A DE102004004045B4 (de) 2004-01-27 2004-01-27 Halbleiterbauelement mit temporärem Feldstoppbereich und Verfahren zu dessen Herstellung
DE102004004045.1 2004-01-27

Publications (2)

Publication Number Publication Date
WO2005071757A2 WO2005071757A2 (de) 2005-08-04
WO2005071757A3 true WO2005071757A3 (de) 2005-11-24

Family

ID=34801067

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2005/000093 WO2005071757A2 (de) 2004-01-27 2005-01-24 Halbleiterbauelement mit temporärem feldstoppbereich und verfahren zu dessen herstellung

Country Status (3)

Country Link
US (1) US7696605B2 (de)
DE (1) DE102004004045B4 (de)
WO (1) WO2005071757A2 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7753609B2 (en) * 2006-06-07 2010-07-13 Elc Management Llc Cosmetic applicators containing heating elements
EP2800143B1 (de) 2011-12-28 2020-04-08 Fuji Electric Co., Ltd. Halbleiterbauelement und herstellungsverfahren für ein halbleiterbauelement
DE102012020785B4 (de) 2012-10-23 2014-11-06 Infineon Technologies Ag Erhöhung der Dotierungseffizienz bei Protonenbestrahlung
DE102014116666B4 (de) 2014-11-14 2022-04-21 Infineon Technologies Ag Ein Verfahren zum Bilden eines Halbleiterbauelements
WO2017047285A1 (ja) 2015-09-16 2017-03-23 富士電機株式会社 半導体装置および半導体装置の製造方法
JP6846119B2 (ja) * 2016-05-02 2021-03-24 株式会社 日立パワーデバイス ダイオード、およびそれを用いた電力変換装置
JP7243744B2 (ja) 2019-01-18 2023-03-22 富士電機株式会社 半導体装置および半導体装置の製造方法
CN113921395A (zh) * 2021-10-13 2022-01-11 南瑞联研半导体有限责任公司 一种低损耗igbt芯片集电极结构及其制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4752818A (en) * 1985-09-28 1988-06-21 Kabushiki Kaisha Toyota Chuo Kenkyusho Semiconductor device with multiple recombination center layers
EP0797257A2 (de) * 1996-03-18 1997-09-24 Mitsubishi Denki Kabushiki Kaisha Thyristor mit reduzierter Minoritätsträger-Lebensdauer und Verfahren zur Herstellung desselben
EP1014453A1 (de) * 1997-08-14 2000-06-28 Mitsubishi Denki Kabushiki Kaisha Halbleiterbauelement und verfahren zu dessen herstellung
DE10100802C1 (de) * 2001-01-10 2002-08-22 Infineon Technologies Ag Halbleiterbauelement mit hoher Avalanchefestigkeit und dessen Herstellungsverfahren

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3111827B2 (ja) * 1994-09-20 2000-11-27 株式会社日立製作所 半導体装置及びそれを使った電力変換装置
DE19709652C2 (de) * 1997-03-10 1999-09-16 Semikron Elektronik Gmbh Schnelle Leistungsdiode mit einer durch Bestrahlen mit beschleunigten Teilchen erzeugten Mittelzone
US6281521B1 (en) * 1998-07-09 2001-08-28 Cree Research Inc. Silicon carbide horizontal channel buffered gate semiconductor devices
JP4122113B2 (ja) * 1999-06-24 2008-07-23 新電元工業株式会社 高破壊耐量電界効果型トランジスタ
JP5061407B2 (ja) * 2001-01-31 2012-10-31 富士電機株式会社 半導体装置およびその製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4752818A (en) * 1985-09-28 1988-06-21 Kabushiki Kaisha Toyota Chuo Kenkyusho Semiconductor device with multiple recombination center layers
EP0797257A2 (de) * 1996-03-18 1997-09-24 Mitsubishi Denki Kabushiki Kaisha Thyristor mit reduzierter Minoritätsträger-Lebensdauer und Verfahren zur Herstellung desselben
EP1014453A1 (de) * 1997-08-14 2000-06-28 Mitsubishi Denki Kabushiki Kaisha Halbleiterbauelement und verfahren zu dessen herstellung
DE10100802C1 (de) * 2001-01-10 2002-08-22 Infineon Technologies Ag Halbleiterbauelement mit hoher Avalanchefestigkeit und dessen Herstellungsverfahren

Also Published As

Publication number Publication date
DE102004004045A1 (de) 2005-08-18
US20070278514A1 (en) 2007-12-06
DE102004004045B4 (de) 2009-04-02
WO2005071757A2 (de) 2005-08-04
US7696605B2 (en) 2010-04-13

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