Classifications

• • G—PHYSICS
  • G01—MEASURING; TESTING
  • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
  • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
  • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
  • G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
• • G—PHYSICS
  • G01—MEASURING; TESTING
  • G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
  • G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
  • G01D5/26—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light
• • G—PHYSICS
  • G01—MEASURING; TESTING
  • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
  • G01J1/00—Photometry, e.g. photographic exposure meter
  • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
  • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
  • H10K10/40—Organic transistors
  • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
  • H10K10/462—Insulated gate field-effect transistors [IGFETs]
  • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
  • H10K10/40—Organic transistors
  • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
  • H10K10/462—Insulated gate field-effect transistors [IGFETs]
  • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
  • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
  • Y02E10/00—Energy generation through renewable energy sources
  • Y02E10/50—Photovoltaic [PV] energy
  • Y02E10/549—Organic PV cells
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
  • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
  • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
  • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
  • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
  • Y10T29/00—Metal working
  • Y10T29/49—Method of mechanical manufacture
  • Y10T29/49002—Electrical device making
  • Y10T29/49117—Conductor or circuit manufacturing
  • Y10T29/49194—Assembling elongated conductors, e.g., splicing, etc.

Definitions

• Patent Document 1 discloses that two comb-shaped electrodes are provided on a glass substrate, and a sensitive film mixed with two types of conductive polymers is further formed thereon, so that gas response characteristics differ. It is introduced that various gas sensors can be obtained!
• Patent Document 2 discloses an ampoule in which two comb-shaped electrodes are formed on an electrically insulating ceramic substrate, and a layered ammonia-sensitive film is formed so as to straddle these two comb-shaped electrodes. Gas sensors are introduced.
• Claim 4 describes that after winding a plate-like product in which two or more conductive wires are joined in a striped manner on the outer peripheral surface of an insulating columnar body, some of the conductive wires are peeled off. This is a method for manufacturing a columnar electric element.
• Claim 7 is the columnar electric element, wherein one conductive wire is spirally wound around the outer peripheral surface of the insulating columnar body. This is produced, for example, by the method according to any one of claims 1 to 5.
• Claim 26 is the method for manufacturing a columnar electric element according to any one of claims 20 to 25, wherein the columnar electric element is a sensor or a solar cell.
• Claim 29 is a columnar solar cell manufactured by the method according to any one of claims 20 to 25.
• a small solar cell can be obtained by a simple manufacturing method.
• FIG. 1 shows a perspective view of a temperature sensor which is one of the “single-line columnar electric elements” according to the present invention.
• a platinum wire 4 is wound around the outer peripheral surface of an insulating pillar 2 made of plastic.
• the outlets 3 are attached to both ends of the platinum wire 4, and these can be connected to the measuring instrument 1 to measure the resistance value to know the temperature.
• a plate product may be prepared with another linear material! / ⁇ .
• a conductive linear substance is used, after the platinum deposition of (c) is completed, the remaining linear substance is peeled off from the outer peripheral surface of the columnar body 2.
• a plate-like product in which a conductive wire, for example, a platinum wire is joined in a striped shape may be wound around the outer peripheral surface of the columnar body 2.
• a plate-shaped product composed of a plurality of platinum wires is tightly wound around the outer peripheral surface of the columnar body 2 and fixed with, for example, a two-component mixed epoxy adhesive.
• a ceramic adhesive for example, Zazerizen cement manufactured by Nilaco Co., Ltd.
• one end of the platinum wire is pinched by hand or tweezers or the like, and peeled along the outer peripheral surface of the columnar body 2.
• outlets are provided on both sides of the platinum wire fixed to the outer peripheral surface of the columnar body 2 to complete the process.
• a coating process such as vapor deposition can be omitted.
• FIG. 11 is a perspective view showing an example of a method for manufacturing this temperature sensor.
• two platinum wires 4 having a diameter of 0.02 mm are densely wound around a part of a columnar body made of a fibrous material, and then one platinum wire is removed. For example, by placing it on a table 15 and cutting both sides of a pillar around which a platinum wire is wound, an ultra-small sensor is manufactured. If this temperature sensor is used, it can be set in a narrow space and the temperature there can be measured.
• the conductive wire wound around the outer peripheral surface of the columnar body 2 may be made of a material other than metal, for example, an organic conductive wire. included.
• the organic conductor instead of the vapor deposition in (c), the organic conductor may be coated by applying a molten, dissolved or gelled organic conductor.
• a sensor may be created by the method shown in FIG. . That is, a plate-like product in which the insulating wire 6 and the conductive wire 7 are joined in a stripe shape is wound around the outer peripheral surface of the columnar body 2 and fixed with an adhesive or the like. Also in this case, the coating process such as vapor deposition can be omitted, and the outlets 3 are provided on both sides of the conductive wire 7 to complete the process.
• FIG. 5 is a perspective view of an optical sensor which is one of the “plate-shaped columnar electric elements made of semiconductor power” according to the present invention.
• the outer peripheral surface of the insulating columnar body 2 is coated in a plate shape with a semiconductor 8, for example, an organic semiconductor made of a conductive polymer doped with fullerene.
• a copper wire 9 and an aluminum wire 10 are wound around the outside. Light irradiating this sensor is converted into electricity by the semiconductor 8.
• the intensity of the light irradiating the sensor can be known.
• poly (3-alkylthiophene), poly (2,5-dioxytyloxy-p-phenylene-vinylene) or the like can be used.
• poly (3-hexylthiophene), which is a kind of poly (3-alkylthiophene) it is preferable to dope fullerene by 20 to 30% by weight.
• the copper wire 9 and the aluminum wire 10 can be wound around the outside in the same manner as described with reference to FIG.
• a mask material for coating for example, a cloth 5 is spirally wound and fixed.
• copper is coated, for example, vapor-deposited to form a copper wire 9 in a gap between the cloths 5.
• the cloth 5 is again spirally wound and fixed so as to cover the copper wire 9.
• aluminum is vapor-deposited to form an aluminum wire 10 in a gap between the cloths 5.
• the wrap 5 is removed, and finally the copper wire 9 and the aluminum wire 10 are provided with the outlet 3 to complete the aluminum wire 10.
• the two conductive wires wound around the columnar body 2 coated with the semiconductor 8 include materials other than metal, for example, organic conductive wires.
• the coating instead of the vapor deposition in (c) and (e), the coating may be performed by applying a corresponding organic conductor in a melt, a solution or a gel state.
• the columnar electrical An element may be created. That is, a wire prepared by connecting the insulated wire 6, the first conductive wire 11, the insulated wire 6, and the second conductive wire 12 in a striped manner is prepared. This is wound around the outside of the columnar body 2 coated with the semiconductor 8. Also in this case, the coating process such as deposition of the conductive wire can be omitted, and the first conductive wire 11 and the second conductive wire 12 are provided with the outlet 3 to complete the process.
• the semiconductor 8 there is a gas sensor using poly-p-phenylene, polyacetylene, polythiophene, or the like. These semiconductors come in contact with nitrogen (NO) gas, ammonia (NH) gas, etc.
• NO nitrogen
• NH ammonia
• Touching changes the conductivity.
• the gas concentration is measured by the change in conductivity.
• the semiconductor 8 there is a humidity sensor using polyfuran, polythiophene, or the like.
• Polyfuran measures humidity by changing the conductivity
• polythiophene measures humidity by changing the potential between two conductive wires that are in contact with this semiconductor.
• FIG. 9 is a perspective view of an “organic electric element formed of a semiconductor line” according to the present invention.
• a first conductive wire 11 and a second conductive wire 12 are wound around an insulating column 2 and a semiconductor 8 is coated between the two conductive wires.
• the bonding force between the two conductive wires and the semiconductor wire is high and the one on the bonded plate can easily follow the bending stress, create it by the following method. Is also good. Prepare a plate-like product in which four wires are joined on a stripe in the order of semiconductor wire, first conductive wire, semiconductor wire, and second conductive wire. After winding this around the outer peripheral surface of the columnar body and fixing it, the first conductive wire and the second conductive wire are provided with outlets to complete.
• a plate-like product in which the first conductive wire and three semiconductor wires are joined in a stripe shape may be prepared.
• This plate-shaped product is wound around the outer peripheral surface of the columnar body and fixed. Thereafter, the semiconductor line not adjacent to the first conductive line is peeled off, and the trace is coated with a second conductive material to form a second conductive line. Finally, the first conductive line and the second conductive line are provided with outlets to complete.
• FIG. 10 is a perspective view of a “columnar electric element using two types of semiconductors” according to the present invention.
• a first semiconductor 13 is coated on the outer peripheral surface of a pillar 2 made of a cane, and then a first conductive wire 11 and a second conductive wire 12 are wound around the outside thereof. Further, the second semiconductor 14 is coated between the two conductive wires. Winding of conductive wires 11 and 12 and coating of second semiconductor 14 For the tinting, the same method as that described in the section “Plate-shaped electric element made of plate-shaped semiconductor” and “Column-shaped electric element made of semiconductor wire” can be used. Further, since two types of semiconductors can be used here, the use of the sensor according to the present invention can be expanded, for example, the types of gases that can be detected are expanded.
• the winding of the conductive wire 19 may be performed in the same manner as the winding of the platinum wire described in the section entitled "Pillar-shaped electric element having a single linear force".
• the outlet 3 is attached to the conductive wire 19 to complete the process.
• the optical sensor shown in Fig. 12 can also be used as a solar cell.
• a gold wire instead of a copper wire as the conductor wire 19 the efficiency of photoelectric conversion can be improved.
• FIG. 13 shows a perspective view of an optical sensor as another embodiment of the “columnar electric element having a conductive columnar body” according to the present invention.
• the same components as those in FIG. 12 are denoted by the same reference numerals.
• the transparent electrode 18 is coated on the outside of the semiconductor 17.
• An optical sensor is composed of the conductive column 16, the semiconductor 17, and the transparent electrode 18. That is, a potential difference is generated between the columnar body 16 and the transparent electrode 18 according to the intensity of light irradiated through the exposed portion of the semiconductor 17 and the transparent electrode 18, and a current flows when the columnar body 16 and the transparent electrode 18 are connected.
• the transparent electrode 18 is cracked and broken when it is crooked. Therefore, in the present invention, the conductive wire 19 is wound around the outside of the transparent electrode 18 so as to be fixed while being in electrical contact with the transparent electrode 18.
• the work function of the column 16 made of aluminum and the transparent electrode 18 is different, when the semiconductor 17 is irradiated with light, a potential difference is generated between the column 16 and the transparent electrode 18.
• the intensity of light irradiating the semiconductor 17 can be known.
• a columnar transistor can also be manufactured.
• a conductive pillar is coated with an insulator.
• the coating is performed by vapor deposition or by applying a melt, solution or gel of an insulator. It is completed by winding two conductive wires around the outside. For winding the two conductive wires, the method described in any one of claims 9 to 14 may be used.
• the columnar electric element according to the present invention can be miniaturized. Therefore, it can be installed in a narrow space such as a gap between machines and used as a sensor or the like for measuring local temperature, gas concentration and the like.
• a narrow space such as a gap between machines and used as a sensor or the like for measuring local temperature, gas concentration and the like.
• the entire outer peripheral surface of the columnar body can be coated with a sensitive part made of semiconductor or the like, it is small and has high sensitivity, high sensor and conversion efficiency! Thus, a solar cell is obtained.

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• Physics & Mathematics (AREA)
• General Physics & Mathematics (AREA)
• Spectroscopy & Molecular Physics (AREA)
• Photovoltaic Devices (AREA)
• Light Receiving Elements (AREA)
• Thin Film Transistor (AREA)
• Electroluminescent Light Sources (AREA)
• Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
• Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
• Measuring Temperature Or Quantity Of Heat (AREA)

Priority Applications (3)

Applications Claiming Priority (2)

Related Child Applications (2)

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Citations (7)

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• 2004
  • 2004-11-22 JP JP2005515683A patent/JPWO2005050745A1/ja active Pending
  • 2004-11-22 WO PCT/JP2004/017367 patent/WO2005050745A1/ja not_active Ceased
  • 2004-11-22 US US10/579,920 patent/US7495307B2/en not_active Expired - Fee Related
• 2008
  • 2008-09-11 US US12/208,567 patent/US7763912B2/en not_active Expired - Fee Related
  • 2008-10-06 JP JP2008259754A patent/JP5369264B2/ja not_active Expired - Fee Related
• 2009
  • 2009-08-31 JP JP2009200749A patent/JP2010016394A/ja active Pending
• 2012
  • 2012-11-26 JP JP2012257920A patent/JP2013093585A/ja active Pending
• 2014
  • 2014-04-08 JP JP2014079293A patent/JP2014170948A/ja active Pending
• 2016
  • 2016-03-02 JP JP2016040361A patent/JP6283383B2/ja not_active Expired - Fee Related

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