WO2005045871A1 - Dispositif a effet de champ pourvu d'une couche de revetement et procede de fabrication associe - Google Patents

Dispositif a effet de champ pourvu d'une couche de revetement et procede de fabrication associe Download PDF

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Publication number
WO2005045871A1
WO2005045871A1 PCT/KR2004/002898 KR2004002898W WO2005045871A1 WO 2005045871 A1 WO2005045871 A1 WO 2005045871A1 KR 2004002898 W KR2004002898 W KR 2004002898W WO 2005045871 A1 WO2005045871 A1 WO 2005045871A1
Authority
WO
WIPO (PCT)
Prior art keywords
coating layer
field emission
emission device
nano tube
carbon nano
Prior art date
Application number
PCT/KR2004/002898
Other languages
English (en)
Inventor
Gwang Bai Kim
Yang Woon Na
Original Assignee
Iljin Diamond Co., Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Iljin Diamond Co., Ltd filed Critical Iljin Diamond Co., Ltd
Publication of WO2005045871A1 publication Critical patent/WO2005045871A1/fr

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30446—Field emission cathodes characterised by the emitter material
    • H01J2201/30453—Carbon types
    • H01J2201/30469—Carbon nanotubes (CNTs)

Definitions

  • the present invention relates to a field emission device provided in a display device or the like and used as an electron emission source, and more particularly, to a field emission device with a coating layer which is capable of improving the low voltage operation and the emission characteristics by coating a carbonaceous matter on a carbon nano tube, and a method for fabricating the same.
  • a field emission device is used as an electron emission source of a display device, a lighting device, a backlight unit, etc.
  • This field emission device is a display device in which, if a strong electric field is formed in an emitter, cold electrons are emitted, move in vacuum, and collide with a fluorescent film, thereby, an Image is formed by lighting a fluorescent substance.
  • the method of forming a carbon nano tube on a substrate for the purpose of improving the field emission characteristics using a physically and chemically stable carbon nano tube.
  • the method of forming a carbon nano tube includes the method of directly growing a carbon nano tube on a substrate using chemical vapor depcsition(CVD) and the method of screen printing using a paste.
  • the degree of vacuum in the panel(chamber) of a field emission device is gradually decreased with the passage of time, and ionized ions, which ionized by collision with residual gases, sputter (ion collision) an electron emission source and an outgassing occurs, thereby the device is damaged and the life span is reduced.
  • a getter is mounted to remove residual gases, but the aforementioned problem still exists.
  • an object of the present invention is to provide a field emission device with a coating layer which is capable of improving the low voltage operation and the emission characteristics by coating amorphous diamond on a carbon nano tube, and a method of making the same.
  • a field emission device with a coating layer according to the present invention wherein the coating layer is formed on the outer surface of a carbon nano tube.
  • the coating layer is formed by preserving carbon containing methane or ethylene for 10 to 60 minutes under a pressure of 40 to 70 Torr in a hydrogen atmosphere in the temperature range from 200 to 500JJEC, with a carbon nano tube to be coated being housed in a coating apparatus.
  • FIG. 1 is a view showing a frame format of a field emission device according to the present invention
  • Fig. 2 is a SEM photograph of the field emission device according to the present invention
  • Fig. 3 is a graph comparatively showing the field emission characteristics of the field emission device according to the present invention
  • Fig. 4 is a photograph comparatively showing a field emission image of the field emission device according to the present invention.
  • FIG. 1 is a view showing a frame format of a field emission device according to the present invention.
  • Fig. 2 is a SEM photograph of the field emission device according to the present invention.
  • Fig. 3 is a graph comparatively showing the field emission characteristics of the field emission device according to the present invention.
  • Fig. 4 is a photograph comparatively showing a field emission image of the field emission device according to the present invention characteristic of a coating layer 20 formed on the outer surface of a carbon nano tube 10.
  • the present invention is to minimize the damage caused by arcing at a high voltage and reduce the work function of electrons to make an electron emission easier by forming a coating layer 20 on the outer surface of a carbon nano tube IQ preferably at the end thereof.
  • the coating layer 20 is a material having the characteristics such as electron affinity, chemical stability, thermal stability, and high hardness, etc. It is preferable that the coating layer 20 is made of a carbonaceous matter having a lower work function, such as amorphous diamond, diamond like carbon, carbon fiber, boron nitride, aluminum nitride, gallium nitride, graphite or the like, individually or in a combination thereof.
  • a carbonaceous matter having a lower work function such as amorphous diamond, diamond like carbon, carbon fiber, boron nitride, aluminum nitride, gallium nitride, graphite or the like, individually or in a combination thereof.
  • the method of coating the coating layer 2Q sputtering electron beam or laser deposition, chemical vapor deposition, cathodic arc deposition or the like is suitable.
  • the thickness of the coating layer 20 is preferably 1 to lOnm.
  • This range is set in view of the geometrical shape of an electron emission source.
  • Amorphous diamond (work function: l ⁇ 3eV) is coated on the surface of an emitter at a thickness from 1 to lOnm by preserving for 10 to 60 minutes under a pressure of 40 to 70 Torr in a hydrogen atmosphere and a gas (hydrogen content: 0.1 ⁇ 0.5 wt%) contained carbon, such as methane or ethylene, with a coating apparatus set to the temperature range between 200 and 500JJEC.
  • a coating layer 20 is formed at the end of a carbon nano tube 10 and mounted or printed on a display device (not shown), and then if a voltage more than a predetermined level (threshold voltage: turn on voltage) is applied to the display device, an electric field is formed around the tip, whereby electrons start being emitted from the carbon nano tube 10.
  • a voltage more than a predetermined level threshold voltage: turn on voltage
  • Fig. 2 shows a comparison of SEM photographs of the prior art and the present invention.
  • the diameter (??) of the carbon nano tube is 1 to 5nm, and the diameter (??) of the carbon particle is 60 to 70nm, while in the present invention (where a coating layer is formed) the diameter (??) of the carbon nano tube is 10 to 20nm.
  • the diameter (??) of the carbon nano tube of this invention has grown at least twice larger as compared to the comparative example.
  • Fig. 3 is a graph showing the field emission characteristics of the prior art and of the present invention. It can be seen that in the comparative example (where no coating layer is formed), the threshold voltage (turn on voltage) is about 2 V/um, while in the present invention the threshold voltage has reduced to about 1.5 V/um.
  • the emission current of this invention has become better about twice or more at the same voltage as compared to the comparative example, and there is hardly any damage caused by arching even at a high voltage (more than 3kV).
  • FIG. 4 is a view comparatively showing field emission images of the prior art and of the present invention.
  • the coating layer 20 coated on the carbon nano tube 10 is formed of material having a low work function to thus increase the field electron emission efficiency and the coating layer 20 is overally uniformly coated.
  • a coating layer is formed on the outer surface of a carbon nano tube to thus prevent the damage of the carbon nano tube caused by arching.

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)

Abstract

L'invention se rapporte à un dispositif à effet de champ qui est imprimé sur un dispositif d'affichage ou similaire et utilisé en tant que source d'émission d'électrons. Une couche de revêtement carboné est formée sur la surface externe d'un nanotube de carbone afin d'empêcher que le nanotube de carbone ne s'abîme sous l'effet de la courbure. Les caractéristiqus d'émission du dispositif à effet de champ sont ainsi améliorées, la durée de vie est allongée, et la densité du courant du dispositif à effet de champ est relativement augmentée afin d'améliorer la luminosité.
PCT/KR2004/002898 2003-11-10 2004-11-10 Dispositif a effet de champ pourvu d'une couche de revetement et procede de fabrication associe WO2005045871A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2003-0079196 2003-11-10
KR20030079196A KR100561491B1 (ko) 2003-11-10 2003-11-10 코팅막이 형성된 전계방출소자 및 그것의 제조방법

Publications (1)

Publication Number Publication Date
WO2005045871A1 true WO2005045871A1 (fr) 2005-05-19

Family

ID=34567687

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2004/002898 WO2005045871A1 (fr) 2003-11-10 2004-11-10 Dispositif a effet de champ pourvu d'une couche de revetement et procede de fabrication associe

Country Status (3)

Country Link
KR (1) KR100561491B1 (fr)
TW (1) TW200516627A (fr)
WO (1) WO2005045871A1 (fr)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008068351A3 (fr) * 2006-12-08 2008-07-31 Thales Sa Tube electronique a cathode froide a commande optique
WO2010056521A1 (fr) * 2008-10-30 2010-05-20 Sandisk 3D, Llc Dispositifs électroniques comprenant des pellicules à base de carbone, et procédés de formation de tels dispositifs
US7781950B2 (en) 2006-06-23 2010-08-24 Tsinghua University Field emission element having carbon nanotube and manufacturing method thereof
US8076834B2 (en) 2007-08-23 2011-12-13 E.I. Du Pont De Nemours And Company Field emission device with protecting vapor
US8133793B2 (en) 2008-05-16 2012-03-13 Sandisk 3D Llc Carbon nano-film reversible resistance-switchable elements and methods of forming the same
US8183121B2 (en) 2009-03-31 2012-05-22 Sandisk 3D Llc Carbon-based films, and methods of forming the same, having dielectric filler material and exhibiting reduced thermal resistance
US8421050B2 (en) 2008-10-30 2013-04-16 Sandisk 3D Llc Electronic devices including carbon nano-tube films having carbon-based liners, and methods of forming the same
US8466044B2 (en) 2008-08-07 2013-06-18 Sandisk 3D Llc Memory cell that includes a carbon-based memory element and methods forming the same
US8569730B2 (en) 2008-07-08 2013-10-29 Sandisk 3D Llc Carbon-based interface layer for a memory device and methods of forming the same
US8835892B2 (en) 2008-10-30 2014-09-16 Sandisk 3D Llc Electronic devices including carbon nano-tube films having boron nitride-based liners, and methods of forming the same
CN104124122A (zh) * 2014-07-31 2014-10-29 国家纳米科学中心 一种利用类金刚石薄膜提高碳纳米管场发射性能的方法
CN104975201A (zh) * 2014-04-14 2015-10-14 现代自动车株式会社 纳米碳增强的铝复合材料及其制造方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101100816B1 (ko) * 2005-07-29 2012-01-02 삼성에스디아이 주식회사 열전자 방출용 전자 방출원, 이를 구비한 전자 방출 소자,이를 구비한 평판 디스플레이 장치 및 그 제조 방법
KR101636915B1 (ko) 2010-09-03 2016-07-07 삼성전자주식회사 그래핀 또는 탄소나노튜브를 이용한 반도체 화합물 구조체 및 그 제조방법과, 반도체 화합물 구조체를 포함하는 반도체 소자
EP3316277A4 (fr) 2015-07-07 2019-03-20 Value Engineering Ltd. Répulseur pour implanteur d'ions, cathode, paroi de chambre, organe de fente, et dispositif générateur d'ions les comprenant
KR101945528B1 (ko) * 2016-07-07 2019-02-08 티디에스 주식회사 고해상도 전자방출소자의 제조방법 및 그 전자방출소자

Citations (5)

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Publication number Priority date Publication date Assignee Title
JP2000208029A (ja) * 1999-01-13 2000-07-28 Matsushita Electric Ind Co Ltd 電子放出材料及び電子放出素子、並びにその製造方法
JP2000285792A (ja) * 1999-03-31 2000-10-13 Canon Inc 電子放出素子及びそれを用いた画像形成装置
JP2002093305A (ja) * 2000-07-12 2002-03-29 Akio Hiraki 電子放出陰極
JP2002203471A (ja) * 2000-12-19 2002-07-19 Iimu Jisuun フィールド・エミッタ
JP2003217516A (ja) * 2002-01-10 2003-07-31 Samsung Electronics Co Ltd 保護膜を有する炭素ナノチューブを具備した電界放出素子

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000208029A (ja) * 1999-01-13 2000-07-28 Matsushita Electric Ind Co Ltd 電子放出材料及び電子放出素子、並びにその製造方法
JP2000285792A (ja) * 1999-03-31 2000-10-13 Canon Inc 電子放出素子及びそれを用いた画像形成装置
JP2002093305A (ja) * 2000-07-12 2002-03-29 Akio Hiraki 電子放出陰極
JP2002203471A (ja) * 2000-12-19 2002-07-19 Iimu Jisuun フィールド・エミッタ
JP2003217516A (ja) * 2002-01-10 2003-07-31 Samsung Electronics Co Ltd 保護膜を有する炭素ナノチューブを具備した電界放出素子

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7781950B2 (en) 2006-06-23 2010-08-24 Tsinghua University Field emission element having carbon nanotube and manufacturing method thereof
US7993180B2 (en) 2006-06-23 2011-08-09 Tsinghua University Manufacturing method of field emission element having carbon nanotubes
WO2008068351A3 (fr) * 2006-12-08 2008-07-31 Thales Sa Tube electronique a cathode froide a commande optique
US8427039B2 (en) 2006-12-08 2013-04-23 Thales Optically controlled cold-cathode electron tube
US8076834B2 (en) 2007-08-23 2011-12-13 E.I. Du Pont De Nemours And Company Field emission device with protecting vapor
US8133793B2 (en) 2008-05-16 2012-03-13 Sandisk 3D Llc Carbon nano-film reversible resistance-switchable elements and methods of forming the same
US8680503B2 (en) 2008-05-16 2014-03-25 Sandisk 3D Llc Carbon nano-film reversible resistance-switchable elements and methods of forming the same
US8569730B2 (en) 2008-07-08 2013-10-29 Sandisk 3D Llc Carbon-based interface layer for a memory device and methods of forming the same
US8466044B2 (en) 2008-08-07 2013-06-18 Sandisk 3D Llc Memory cell that includes a carbon-based memory element and methods forming the same
US8421050B2 (en) 2008-10-30 2013-04-16 Sandisk 3D Llc Electronic devices including carbon nano-tube films having carbon-based liners, and methods of forming the same
WO2010059362A1 (fr) * 2008-10-30 2010-05-27 Sandisk 3D, Llc Dispositifs électroniques comprenant un film de nanotubes de carbone recouvert d'une couche à base de nitrure de bore, et procédés de fabrication associés
WO2010059368A1 (fr) * 2008-10-30 2010-05-27 Sandisk 3D, Llc Dispositifs électroniques comprenant un film de nanotubes de carbone recouvert d'une couche à base de carbone, et procédés de fabrication associés
WO2010056521A1 (fr) * 2008-10-30 2010-05-20 Sandisk 3D, Llc Dispositifs électroniques comprenant des pellicules à base de carbone, et procédés de formation de tels dispositifs
US8835892B2 (en) 2008-10-30 2014-09-16 Sandisk 3D Llc Electronic devices including carbon nano-tube films having boron nitride-based liners, and methods of forming the same
US8183121B2 (en) 2009-03-31 2012-05-22 Sandisk 3D Llc Carbon-based films, and methods of forming the same, having dielectric filler material and exhibiting reduced thermal resistance
CN104975201A (zh) * 2014-04-14 2015-10-14 现代自动车株式会社 纳米碳增强的铝复合材料及其制造方法
CN104124122A (zh) * 2014-07-31 2014-10-29 国家纳米科学中心 一种利用类金刚石薄膜提高碳纳米管场发射性能的方法

Also Published As

Publication number Publication date
TW200516627A (en) 2005-05-16
KR20050045216A (ko) 2005-05-17
KR100561491B1 (ko) 2006-03-20

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