WO2005042426A3 - Anodisch mit silizium bondbare glas-keramik (ltcc) - Google Patents

Anodisch mit silizium bondbare glas-keramik (ltcc) Download PDF

Info

Publication number
WO2005042426A3
WO2005042426A3 PCT/DE2004/002414 DE2004002414W WO2005042426A3 WO 2005042426 A3 WO2005042426 A3 WO 2005042426A3 DE 2004002414 W DE2004002414 W DE 2004002414W WO 2005042426 A3 WO2005042426 A3 WO 2005042426A3
Authority
WO
WIPO (PCT)
Prior art keywords
glass
ceramic
silicon
ltcc
anodic bonding
Prior art date
Application number
PCT/DE2004/002414
Other languages
English (en)
French (fr)
Other versions
WO2005042426A2 (de
Inventor
Roland Ehrt
Peter Rothe
Dieter Seifert
Karl Wolfgang Voelger
Original Assignee
Inocermic Ges Fuer Innovative
Roland Ehrt
Peter Rothe
Dieter Seifert
Karl Wolfgang Voelger
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Inocermic Ges Fuer Innovative, Roland Ehrt, Peter Rothe, Dieter Seifert, Karl Wolfgang Voelger filed Critical Inocermic Ges Fuer Innovative
Publication of WO2005042426A2 publication Critical patent/WO2005042426A2/de
Publication of WO2005042426A3 publication Critical patent/WO2005042426A3/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C14/00—Glass compositions containing a non-glass component, e.g. compositions containing fibres, filaments, whiskers, platelets, or the like, dispersed in a glass matrix
    • C03C14/004—Glass compositions containing a non-glass component, e.g. compositions containing fibres, filaments, whiskers, platelets, or the like, dispersed in a glass matrix the non-glass component being in the form of particles or flakes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15—Ceramic or glass substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83893—Anodic bonding, i.e. bonding by applying a voltage across the interface in order to induce ions migration leading to an irreversible chemical bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Ceramic Engineering (AREA)
  • Power Engineering (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Dispersion Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Glass Compositions (AREA)

Abstract

Der Erfindung liegt die Aufgabe zugrunde, eine anodisch mit Silizium bondbare Glas- Keramik (LTCC) und deren Verwendung zum anodischen Bonden mit Silizium anzugeben, wobei vermittels anodischen Bondens bei 400 °C eine Silizium-Wafer zu einem ebenen grossflächigen Silizium-LTCC-Verbund vereint werden soll. Diese Aufgabe wird bei einer Glas-Keramik (LTCC) mit den Bestandteilen AI2O3, Borosilikatglas, Kieselglas und/ oder Cordierit, dadurch gelöst, dass ein Borosilikatglas mit einem Na-Gehalt in der Grössenordnung von 2,6 Masse % und einem thermischen Ausdehungskoeffizienten α in der Grössenordnung 3,4 ppm/K eingesetzt ist und die Ausgangszusarrimensetzung der Glaskeramik besteht aus: 60 - 70 Masse % Borosilikatglas 10 - 20 Masse % AI2O3 8 - 25 Masse % Cordierit und/ oder Kieselglas, so dass der Na-Gehalt, bezogen auf den kompletten Werkstoff ≥ 1,5 Masse % beträgt und diese Ausgangszusammensetzung in einem an sich üblichen keramischen Verfahren geformt und gesintert worden ist und einen thermischen Ausdehnungskoeffizienten in der Grössenordnung von α = 3,50 - 3,65 ppm/K und eine Dielektrizitätskonstante zwischen 5 - 6 aufweist. Die Erfindung ist bei der Herstellung mikroelektronischer Schaltungen anwendbar.
PCT/DE2004/002414 2003-10-28 2004-10-28 Anodisch mit silizium bondbare glas-keramik (ltcc) WO2005042426A2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10351196.2A DE10351196B4 (de) 2003-10-28 2003-10-28 Verwendung einer anodisch mit Silizium bondbaren Glas-Keramik (LTCC)
DE10351196.2 2003-10-28

Publications (2)

Publication Number Publication Date
WO2005042426A2 WO2005042426A2 (de) 2005-05-12
WO2005042426A3 true WO2005042426A3 (de) 2005-06-09

Family

ID=34530047

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2004/002414 WO2005042426A2 (de) 2003-10-28 2004-10-28 Anodisch mit silizium bondbare glas-keramik (ltcc)

Country Status (2)

Country Link
DE (1) DE10351196B4 (de)
WO (1) WO2005042426A2 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101395881B1 (ko) 2005-12-19 2014-05-21 시코르, 인크. 브롬화 티오트로피움의 신규한 형태 및 이의 제조 방법
US9108962B2 (en) 2005-12-19 2015-08-18 Sicor, Inc. Forms of tiotropium bromide and processes for preparation thereof
JP2009280417A (ja) * 2008-05-19 2009-12-03 Nikko Co 陽極接合可能な低温焼結用磁器組成物
JP5175650B2 (ja) 2008-08-06 2013-04-03 ニッコー株式会社 陽極接合可能な磁器及び前記磁器用組成物
DE102009000058A1 (de) 2009-01-07 2010-07-08 Robert Bosch Gmbh Sensoranordnung und Verfahren zur Herstellung einer Sensoranordnung
DE102011003481A1 (de) * 2011-02-02 2012-08-02 Robert Bosch Gmbh Elektronisches Bauteil umfassend einen keramischen träger und Verwendung eines keramischen Trägers
DE102013101731A1 (de) 2013-02-21 2014-09-04 Epcos Ag Drucksensorsystem
DE102013101732A1 (de) * 2013-02-21 2014-08-21 Epcos Ag Sensorsystem
CN108529885B (zh) * 2017-03-06 2019-10-15 中国科学院上海硅酸盐研究所 一种可阳极键合ltcc材料及其制备方法和应用
CN108996902B (zh) * 2018-09-19 2021-10-26 深圳市晶特智造科技有限公司 一种低温共烧陶瓷材料及其制备方法
DE102020103487B4 (de) 2020-02-11 2022-05-12 Koa Corporation Verfahren zur Herstellung eines Glas-Keramik-Verbundsubstrates

Citations (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58151345A (ja) * 1982-02-26 1983-09-08 Asahi Glass Co Ltd 低誘電率ガラス組成物
JPS6374957A (ja) * 1986-09-16 1988-04-05 日本電気株式会社 低温焼結性低誘電率無機組成物
JPH0360443A (ja) * 1989-07-28 1991-03-15 Kyocera Corp 低温焼成ガラスセラミック体
EP0480468A1 (de) * 1990-10-11 1992-04-15 Aluminum Company Of America Anorganische Glaszusammensetzung mit niedrige Dielektrizität
JPH04238837A (ja) * 1990-12-28 1992-08-26 Nippon Electric Glass Co Ltd ガラスセラミック複合材
JPH04238838A (ja) * 1991-01-09 1992-08-26 Nippon Electric Glass Co Ltd ガラスセラミック複合材
JPH0590446A (ja) * 1991-09-30 1993-04-09 Nec Corp 多層ガラスセラミツク基板とその製造方法
EP0575813A2 (de) * 1992-06-08 1993-12-29 Nec Corporation Glaskeramisches Mehrschichtsubstrat und Verfahren zur seiner Herstellung
US5283210A (en) * 1991-07-31 1994-02-01 Nec Corporation Low temperature sintering low dielectric inorganic composition
US5316985A (en) * 1991-12-09 1994-05-31 Aluminum Company Of America Suppression of crystal growth in low dielectric inorganic composition using ultrafine alumina
US5324370A (en) * 1992-02-27 1994-06-28 Fujitsu Limited Method of manufacturing a multi-layered ceramic circuit board containing layers of reduced dielectric constant
US5342674A (en) * 1992-03-10 1994-08-30 Hitachi, Ltd. Ceramic composition and ceramic circuit board
EP0621245A1 (de) * 1993-04-22 1994-10-26 Nec Corporation Gestapeltes glaskeramisches Mehrschichtsubstrat und Verfahren zur Herstellung
JPH07118035A (ja) * 1993-10-18 1995-05-09 Sumitomo Metal Ind Ltd セラミックス基板およびその製造方法
KR20030094774A (ko) * 2002-06-07 2003-12-18 한국과학기술연구원 유전체 세라믹 조성물 및 이를 이용한 저온 소성 유전체세라믹의 제조방법

Patent Citations (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58151345A (ja) * 1982-02-26 1983-09-08 Asahi Glass Co Ltd 低誘電率ガラス組成物
JPS6374957A (ja) * 1986-09-16 1988-04-05 日本電気株式会社 低温焼結性低誘電率無機組成物
JPH0360443A (ja) * 1989-07-28 1991-03-15 Kyocera Corp 低温焼成ガラスセラミック体
EP0480468A1 (de) * 1990-10-11 1992-04-15 Aluminum Company Of America Anorganische Glaszusammensetzung mit niedrige Dielektrizität
JPH04238837A (ja) * 1990-12-28 1992-08-26 Nippon Electric Glass Co Ltd ガラスセラミック複合材
JPH04238838A (ja) * 1991-01-09 1992-08-26 Nippon Electric Glass Co Ltd ガラスセラミック複合材
US5283210A (en) * 1991-07-31 1994-02-01 Nec Corporation Low temperature sintering low dielectric inorganic composition
JPH0590446A (ja) * 1991-09-30 1993-04-09 Nec Corp 多層ガラスセラミツク基板とその製造方法
US5316985A (en) * 1991-12-09 1994-05-31 Aluminum Company Of America Suppression of crystal growth in low dielectric inorganic composition using ultrafine alumina
US5324370A (en) * 1992-02-27 1994-06-28 Fujitsu Limited Method of manufacturing a multi-layered ceramic circuit board containing layers of reduced dielectric constant
US5342674A (en) * 1992-03-10 1994-08-30 Hitachi, Ltd. Ceramic composition and ceramic circuit board
EP0575813A2 (de) * 1992-06-08 1993-12-29 Nec Corporation Glaskeramisches Mehrschichtsubstrat und Verfahren zur seiner Herstellung
EP0621245A1 (de) * 1993-04-22 1994-10-26 Nec Corporation Gestapeltes glaskeramisches Mehrschichtsubstrat und Verfahren zur Herstellung
JPH07118035A (ja) * 1993-10-18 1995-05-09 Sumitomo Metal Ind Ltd セラミックス基板およびその製造方法
KR20030094774A (ko) * 2002-06-07 2003-12-18 한국과학기술연구원 유전체 세라믹 조성물 및 이를 이용한 저온 소성 유전체세라믹의 제조방법

Non-Patent Citations (7)

* Cited by examiner, † Cited by third party
Title
DATABASE WPI Section Ch Week 198819, Derwent World Patents Index; Class L03, AN 1988-130584, XP002323717 *
DATABASE WPI Section Ch Week 200429, Derwent World Patents Index; Class L02, AN 2004-312201, XP002323716 *
PATENT ABSTRACTS OF JAPAN vol. 007, no. 273 (C - 198) 6 December 1983 (1983-12-06) *
PATENT ABSTRACTS OF JAPAN vol. 015, no. 211 (C - 0836) 29 May 1991 (1991-05-29) *
PATENT ABSTRACTS OF JAPAN vol. 017, no. 001 (C - 1014) 5 January 1993 (1993-01-05) *
PATENT ABSTRACTS OF JAPAN vol. 017, no. 431 (E - 1411) 10 August 1993 (1993-08-10) *
PATENT ABSTRACTS OF JAPAN vol. 1995, no. 08 29 September 1995 (1995-09-29) *

Also Published As

Publication number Publication date
DE10351196B4 (de) 2016-08-04
DE10351196A1 (de) 2005-06-02
WO2005042426A2 (de) 2005-05-12

Similar Documents

Publication Publication Date Title
WO2005042426A3 (de) Anodisch mit silizium bondbare glas-keramik (ltcc)
MX9504293A (es) Vidriado exento de plomo y que se hornea a baja temperatura, para aplicarse a ceramica de alumina.
AU2003299822A1 (en) Methods making alumina-silica glasses and ceramics
MXPA04003204A (es) Proceso para preparar materias para producir vidrio.
EP1829841A4 (de) Keramikmaterialzusammensetzung, keramiksubstrat und irreversibles schaltungselement
DE50303491D1 (de) Opaleszierende glaskeramik
EP1734017B1 (de) Produktionsmethode für antike Fliesen
EP0962213A3 (de) Dentalporzellan
CN102001864A (zh) 耐热瓷釉
EP1893540A4 (de) Glaszusammensetzung mit hohem entspannungspunkt für ein substrat
ATE285386T1 (de) Glas-keramik-zusammensetzung, glas-keramik gesintertes material und keramischs mehrschichtsubstrat
WO2003031359A3 (en) Methods of adjusting temperatures of glass characteristics and glass articles produced thereby
WO2004071980A3 (en) Ceramics and methods of making the same
IT1195971B (it) Composizioni da stampa per la deco razione di substrati resistenti al calore particolarmente vetro cerami ca e simili
KR880013242A (ko) 전자 패키징에 유용한 글래스 세라믹
KR920014725A (ko) 유리-세라믹-결합된 세라믹 복합체
TW200616926A (en) Low-temperature co-fired ceramics material and multilayer wiring board using the same
GB1503136A (en) Semiconductor device assembly
DK1322566T3 (da) Fremgangsmåde til fremstilling af bariumlanthansilicatglaskeramiske materialer
GB1078329A (en) Process for producing seals between devitrified glass and ceramic, metal or glass
EP1130003A4 (de) Glasskeramische zusammensetzung und elektronische teile und mehrfach beschichtete lc komponente diese verwendend
DE59708185D1 (de) Silikatglaszusammensetzung und verfahren zur modifikation keramischer werkstoffe
JPH0769709A (ja) 磁器、磁器原料組成物及び該磁器の製造方法
WO1999021803A3 (en) Dielectric glasses for low dielectric loss, low temperature cofired ceramics with medium dielectric constants
KR960702822A (ko) 코런덤석출소지 및 그 제조방법 (Crystallized Corundum Containing Body and Method for Preparing the Same)

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): BW GH GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
122 Ep: pct application non-entry in european phase