WO2005011104A3 - Amplificateur de tension a faible consommation - Google Patents

Amplificateur de tension a faible consommation Download PDF

Info

Publication number
WO2005011104A3
WO2005011104A3 PCT/FR2004/050330 FR2004050330W WO2005011104A3 WO 2005011104 A3 WO2005011104 A3 WO 2005011104A3 FR 2004050330 W FR2004050330 W FR 2004050330W WO 2005011104 A3 WO2005011104 A3 WO 2005011104A3
Authority
WO
WIPO (PCT)
Prior art keywords
transistor
current generator
low
voltage amplifier
field effect
Prior art date
Application number
PCT/FR2004/050330
Other languages
English (en)
Other versions
WO2005011104A2 (fr
Inventor
Marc Arques
Original Assignee
Commissariat Energie Atomique
Marc Arques
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique, Marc Arques filed Critical Commissariat Energie Atomique
Priority to JP2006519974A priority Critical patent/JP2007516636A/ja
Priority to DE602004014152T priority patent/DE602004014152D1/de
Priority to EP04767891A priority patent/EP1647091B1/fr
Priority to US10/563,597 priority patent/US7362175B2/en
Publication of WO2005011104A2 publication Critical patent/WO2005011104A2/fr
Publication of WO2005011104A3 publication Critical patent/WO2005011104A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/08—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light
    • H03F3/087—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light with IC amplifier blocks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H03F1/223—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/301—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in MOSFET amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/34—Dc amplifiers in which all stages are dc-coupled
    • H03F3/343—Dc amplifiers in which all stages are dc-coupled with semiconductor devices only
    • H03F3/345—Dc amplifiers in which all stages are dc-coupled with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/48—Indexing scheme relating to amplifiers the output of the amplifier being coupled out by a capacitor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/78—A comparator being used in a controlling circuit of an amplifier

Abstract

L’invention concerne un amplificateur de tension à faible consommation. L’amplificateur comprend un transistor (M1), un premier générateur de courant (I1) qui alimente le drain du transistor (M1), un deuxième générateur de courant (I0) qui charge la source du transistor (M1), le courant délivré par le deuxième générateur de courant (I1) étant sensiblement égal au courant délivré par le premier générateur de courant (I0), un premier condensateur (C1) relié au drain du transistor (M1) et un deuxième condensateur (C0) reliée à la source transistor (M1). Un transistor à effet de champ supplémentaire (M3) de type opposé au premier transistor à effet de champ est placé entre le générateur de courant (I1) et le premier transistor à effet de champ (M1). L’invention s’applique plus particulièrement à l’amplification de tension de détecteur X ou gamma.
PCT/FR2004/050330 2003-07-17 2004-07-13 Amplificateur de tension a faible consommation WO2005011104A2 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2006519974A JP2007516636A (ja) 2003-07-17 2004-07-13 低消費電力型電圧増幅器
DE602004014152T DE602004014152D1 (de) 2003-07-17 2004-07-13 Spannungsverstärker mit niedrigem verbrauch
EP04767891A EP1647091B1 (fr) 2003-07-17 2004-07-13 Amplificateur de tension a faible consommation
US10/563,597 US7362175B2 (en) 2003-07-17 2004-07-13 Low-consumption voltage amplifier

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0350344A FR2857798B1 (fr) 2003-07-17 2003-07-17 Amplificateur de tension a faible consommation.
FR03/50344 2003-07-17

Publications (2)

Publication Number Publication Date
WO2005011104A2 WO2005011104A2 (fr) 2005-02-03
WO2005011104A3 true WO2005011104A3 (fr) 2005-03-31

Family

ID=33548338

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/FR2004/050330 WO2005011104A2 (fr) 2003-07-17 2004-07-13 Amplificateur de tension a faible consommation

Country Status (7)

Country Link
US (1) US7362175B2 (fr)
EP (1) EP1647091B1 (fr)
JP (1) JP2007516636A (fr)
AT (1) ATE397318T1 (fr)
DE (1) DE602004014152D1 (fr)
FR (1) FR2857798B1 (fr)
WO (1) WO2005011104A2 (fr)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090237312A1 (en) * 2008-03-24 2009-09-24 Schober Edward A Antenna
US8158449B2 (en) * 2008-10-08 2012-04-17 International Business Machines Corporation Particle emission analysis for semiconductor fabrication steps
US7902920B1 (en) * 2009-09-10 2011-03-08 Media Tek Singapore Pte. Ltd. Amplifier circuit, integrated circuit and radio frequency communication unit
US8957732B2 (en) * 2010-05-25 2015-02-17 Agency For Science, Technology And Research Amplifier and transceiver including the amplifier
GB2481069B (en) 2010-06-11 2017-06-07 Snaptrack Inc Improved crossover performance of power amplifier
US10098595B2 (en) * 2015-08-06 2018-10-16 Texas Instruments Incorporated Low power photon counting system
US10151845B1 (en) 2017-08-02 2018-12-11 Texas Instruments Incorporated Configurable analog-to-digital converter and processing for photon counting
US10024979B1 (en) 2017-11-01 2018-07-17 Texas Instruments Incorporated Photon counting with coincidence detection
TWI688203B (zh) * 2017-12-14 2020-03-11 財團法人工業技術研究院 寬頻轉阻放大器電路
US10890674B2 (en) 2019-01-15 2021-01-12 Texas Instruments Incorporated Dynamic noise shaping in a photon counting system
US10637448B1 (en) * 2019-06-03 2020-04-28 Texas Instruments Incorporated Low-power high-speed Schmitt Trigger with high noise rejection
US20240106431A1 (en) * 2022-09-23 2024-03-28 Qualcomm Incorporated Receivers for high density and low latency chip-to-chip links

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3733514A (en) * 1971-03-19 1973-05-15 Tektronix Inc Wide band amplifier having two separate high and low frequency paths for driving capacitive load with large amplitude signal
EP0480815A1 (fr) * 1990-10-09 1992-04-15 STMicroelectronics S.A. Amplificateur monobroche en circuit intégré
EP0789450A2 (fr) * 1996-02-07 1997-08-13 Lucent Technologies Inc. Un amplificateur haute fréquence efficace à CMOS à transconductance augmentée
WO2003034593A1 (fr) * 2001-10-10 2003-04-24 Sony Corporation Circuit d'amplification

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55153123A (en) * 1979-05-18 1980-11-28 Hitachi Ltd Variable equalizing circuit
JPS5974714A (ja) * 1982-10-22 1984-04-27 Hitachi Ltd Ｍｏｓ増幅器
JPS59229921A (ja) * 1983-05-23 1984-12-24 Rohm Co Ltd スイツチ回路
JPS60140908A (ja) * 1983-12-27 1985-07-25 Nec Corp 増幅回路
JPH062334Y2 (ja) * 1986-06-27 1994-01-19 オンキヨ−株式会社 平衡増幅器
JPH0327606A (ja) * 1989-06-23 1991-02-06 Nec Corp 電界効果トランジスタ増幅回路
JPH03129531A (ja) * 1989-10-16 1991-06-03 Mitsubishi Electric Corp 制御装置
JPH04364496A (ja) * 1991-06-12 1992-12-16 Toshiba Corp 半導体検出器用前置増幅器
JPH05183353A (ja) * 1991-12-26 1993-07-23 Toshiba Corp Ｆｅｔ増幅器
ITTO20010538A1 (it) * 2001-06-05 2002-12-05 St Microelectronics Srl Amplificatore operazionale in classe ab ad elevato guadagno e basso tempo di assestamento.

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3733514A (en) * 1971-03-19 1973-05-15 Tektronix Inc Wide band amplifier having two separate high and low frequency paths for driving capacitive load with large amplitude signal
EP0480815A1 (fr) * 1990-10-09 1992-04-15 STMicroelectronics S.A. Amplificateur monobroche en circuit intégré
EP0789450A2 (fr) * 1996-02-07 1997-08-13 Lucent Technologies Inc. Un amplificateur haute fréquence efficace à CMOS à transconductance augmentée
WO2003034593A1 (fr) * 2001-10-10 2003-04-24 Sony Corporation Circuit d'amplification

Also Published As

Publication number Publication date
EP1647091A2 (fr) 2006-04-19
WO2005011104A2 (fr) 2005-02-03
US7362175B2 (en) 2008-04-22
FR2857798A1 (fr) 2005-01-21
EP1647091B1 (fr) 2008-05-28
ATE397318T1 (de) 2008-06-15
DE602004014152D1 (de) 2008-07-10
FR2857798B1 (fr) 2005-12-02
US20060186959A1 (en) 2006-08-24
JP2007516636A (ja) 2007-06-21

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