WO2005001543A1

WO2005001543A1 - Projection optical system, exposure system, and device production method

Info

Publication number: WO2005001543A1
Application number: PCT/JP2004/008732
Authority: WO
Inventors: Yasuhiro Omura
Original assignee: Nikon Corporation
Priority date: 2003-06-26
Filing date: 2004-06-22
Publication date: 2005-01-06
Also published as: JP2005017734A

Abstract

A small, high-resolution projection optical system which ensures a sufficiently large image-side numerical aperture and a sufficiently large effective imaging area with various aberrations favorably corrected, and which comprises a positive-refractive-power first lens group (G1), a negative-refractive-power second lens group (G2), a positive-refractive-power third lens group (G3), a negative-refractive-power fourth lens group (G4), a positive-refractive-power fifth lens group (G5), and a negative-refractive-power sixth lens group (G6). A first relay system (R12) through a fifth relay system (R56) are disposed respectively between respective lens groups, each relay system including at least one aspherical optical plane.

Description

Specification

Projection optical system, exposure apparatus, and device manufacturing method

Technical field

The present invention relates to a projection optical system, an exposure apparatus, and a device manufacturing method, and more particularly to a projection apparatus suitable for an exposure apparatus used when manufacturing a micro device such as a semiconductor element or a liquid crystal display element by a photolithographic process. It relates to an optical system.

Background art

[0002] When manufacturing semiconductor elements and the like, an exposure apparatus that transfers a pattern image of a reticle as a mask onto a photosensitive substrate such as a resist-coated wafer or a glass plate via a projection optical system is used. Have been. In this type of exposure apparatus, as the pattern of a semiconductor integrated circuit or the like becomes finer, it is desired to improve the resolving power of a projection optical system. In order to improve the resolution of the projection optical system, it is necessary to shorten the wavelength of the exposure light and increase the number of apertures on the image side.

Disclosure of the invention

Problems to be solved by the invention

[0003] In the prior art, various proposals have been made for a projection optical system having a high resolving power. A sufficiently wide and effective exposure area (image field: effective image forming area) is secured. For this reason, the projection exposure of the so-called step-and-scan method, in which the mask pattern is scanned and exposed on each exposure area of the wafer while moving the mask and the wafer relative to the projection optical system, is performed. Sufficiently high throughput could not be achieved.

As described above, in order to realize a high-throughput exposure apparatus, it is desired to secure a wider image field on a wafer, that is, to increase the field. In order to achieve a wide field and high resolution, good correction of aberrations is required.However, aberrations should be corrected satisfactorily over a wide exposure area while securing a large image-side numerical aperture. And it is difficult.

The present invention has been made in view of the above-described problems, and has a small size in which various aberrations are satisfactorily corrected while securing a sufficiently large image-side numerical aperture and a sufficiently large effective imaging area. High answer It is an object to provide an image projection optical system.

[0006] The present invention uses a high-resolution projection optical system having a sufficiently wide effective imaging area.

It is another object of the present invention to provide an exposure apparatus capable of performing good projection exposure with high throughput and high resolution.

[0007] Another object of the present invention is to provide a device manufacturing method capable of manufacturing a good microdevice using an exposure apparatus that performs good projection exposure with high throughput and high resolution.

Means for solving the problem

[0008] In order to solve the above-described problems, in a first embodiment of the present invention, a projection optical system that forms a reduced image of a first surface on a second surface includes:

From the first surface side in the order of light incidence,

A first lens group having a positive refractive power,

A first relay system including at least one aspheric optical surface;

A second lens group including at least two negative lenses and having a negative refractive power; a second relay system including at least one aspheric optical surface;

A third lens group including at least two positive lenses and having a positive refractive power; a third relay system including at least one aspheric optical surface;

A fourth lens group including at least two negative lenses and having a negative refractive power, a fourth relay system including at least one aspheric optical surface,

A fifth lens group including at least two positive lenses and having a positive refractive power; a fifth relay system including at least one aspheric optical surface;

And a sixth lens group having a positive refractive power or a negative refractive power.

In a second embodiment of the present invention, in a projection optical system that forms a reduced image of a first surface on a second surface,

A first lens group disposed in an optical path between the first surface and the second surface and having a positive refractive power;

At least one aspherical lens disposed in an optical path between the first lens group and the second surface; A first relay system including a surface-shaped optical surface,

A second lens group disposed in an optical path between the first relay system and the second surface and including at least two negative lenses and having a negative refractive power;

A second relay system disposed in an optical path between the second lens group and the second surface, the second relay system including at least one aspherical optical surface;

A third lens group disposed in an optical path between the second relay system and the second surface and including at least two positive lenses and having a positive refractive power;

A third relay system disposed in an optical path between the third lens group and the second surface, the third relay system including at least one aspherical optical surface;

A fourth lens group disposed in an optical path between the third relay system and the second surface and including at least two negative lenses and having a negative refractive power;

A fourth relay system disposed in an optical path between the fourth lens group and the second surface, the fourth relay system including at least one aspherical optical surface;

A fifth lens group disposed in an optical path between the fourth relay system and the second surface, including at least two positive lenses, and having a positive refractive power;

A fifth relay system disposed in an optical path between the fifth lens group and the second surface, the fifth relay system including at least one aspheric optical surface;

A projection optical system, comprising: a sixth lens group disposed in an optical path between the fifth relay system and the second surface and having a positive refractive power or a negative refractive power. provide.

According to a third aspect of the present invention, in a projection optical system that forms a reduced image of a first surface on a second surface,

The numerical aperture on the image side is A, the maximum image height is Ym, the maximum effective radius of the optical surface having the largest effective radius among the optical surfaces in the projection optical system is M, and the total length of the projection optical system is When L

32 <2 XM / (A ³ X Ym) <39

38 L / Ym 80

And a projection optical system characterized by satisfying the following condition: [0011] In a fourth embodiment of the present invention, an illumination system for illuminating a mask set on the first surface, and a photosensitive substrate set on the second surface with an image of a pattern formed on the mask There is provided an exposure apparatus comprising: a projection optical system according to the first mode and the third mode to be formed thereon.

[0012] In a fifth aspect of the present invention, the illumination step of illuminating the mask set on the first surface, and the illumination step illuminated by the illumination step via the projection optical system of the first and third aspects. A device manufacturing method, comprising: an exposure step of exposing a pattern of a mask on a photosensitive substrate set on the second surface; and a development step of developing the photosensitive substrate exposed in the exposure step. Provide a way.

The invention's effect

According to the present invention, it is possible to realize a small, high-resolution projection optical system in which various aberrations are satisfactorily corrected, while securing a sufficiently large image-side numerical aperture and a sufficiently wide effective imaging area. You. Therefore, in the exposure apparatus equipped with the projection optical system of the present invention, good projection exposure can be performed with high throughput and high resolution, and fine microdevices with high throughput and high resolution can be obtained. Can be manufactured.

Brief Description of Drawings

FIG. 1 is a view schematically showing a configuration of an exposure apparatus including a projection optical system according to an embodiment of the present invention.

FIG. 2 is a diagram illustrating a lens configuration of a projection optical system according to a first embodiment.

FIG. 3 is a diagram showing lateral aberration in the first example.

FIG. 4 is a diagram illustrating a lens configuration of a projection optical system according to a second embodiment.

FIG. 5 is a diagram showing lateral aberration in a second example.

FIG. 6 is a diagram illustrating a lens configuration of a projection optical system according to a third embodiment.

FIG. 7 is a diagram showing lateral aberration in a third example.

FIG. 8 is a flowchart of a method for obtaining a semiconductor device as a micro device.

FIG. 9 is a flowchart of a method for obtaining a liquid crystal display element as a micro device. BEST MODE FOR CARRYING OUT THE INVENTION

In the projection optical system of the present invention, the first lens group having a positive refractive power, the second lens group having a negative refractive power, the third lens group having a positive refractive power, the fourth lens group having a negative refractive power, and the positive refractive power A six-group configuration including a fifth lens group having a positive refractive power or a sixth lens group having a negative refractive power is employed. With this configuration, it is possible to disperse the refractive power necessary to satisfy the Petzval condition, and to avoid a situation where the refractive power is concentrated on a specific lens group and large aberration occurs.

Further, in the projection optical system of the present invention, five relay systems are arranged between each lens group, and at least one aspherical optical surface is introduced into each relay system. With this configuration, the occurrence of various aberrations such as spherical aberration, coma, and distortion (distortion) is efficiently reduced, while maintaining a sufficiently large image-side numerical aperture and a sufficiently wide effective imaging area. The size of the projection optical system can be reduced.

In the present invention, since the F-number in the fourth lens group tends to increase, it is preferable to arrange at least three negative lenses in the fourth lens group to suppress the occurrence of aberration.

Further, according to the present invention, for example, when the present invention is applied to an exposure apparatus, even when a mask to be set on the object plane or a photosensitive substrate to be set on the image plane is slightly displaced in the optical axis direction, the magnification is not changed. It is desirable that both sides of the object side and the image side be substantially telecentric so that they do not substantially change. In this case, by arranging the variable aperture stop in the fifth lens group, it is possible to maintain the telecentricity on both sides even when the numerical aperture is changed according to the form of the device pattern.

Further, according to the present invention, since the second lens group is constituted only by the negative lens, it becomes possible to efficiently obtain the refractive power required for the lens group, thereby realizing the miniaturization of the projection optical system. The ability to do S. Similarly, by configuring the third lens group only with the positive lens, it becomes possible to efficiently obtain the refracting power required for the lens group, and to reduce the size of the projection optical system.

In the present invention, it is preferable that all the optical surfaces constituting the fifth lens group satisfy the following conditional expression (1). In the conditional expression (1), R is the radius of curvature of each optical surface (vertical radius of curvature for an aspherical optical surface), D is the effective radius of each optical surface, and Ni is Nr is the exit side refractive index of each optical surface.

I (Ni-Nr) X 2 X D / R | <0.62 (1)

[0021] In the fifth lens group, by satisfying conditional force (1) and the force S that requires a large-diameter lens, the tolerance allowed in the manufacture of the lens that constitutes the fifth lens group increases. For example, the stability of the optical system after being mounted on the exposure apparatus is improved. In order to further exert the above-described effects of the present invention, it is more preferable to set the upper limit of conditional expression (1) to 0.52.

In the present invention, it is preferable that all aspheric optical surfaces included in the projection optical system satisfy the following conditional expression (2). In the conditional expression (2), S is the effective radius of the aspherical optical surface included in the projection optical system, and Ym is the maximum image height.

S / Ym <10.8 (2)

[0023] When all the aspherical optical surfaces included in the projection optical system satisfy the conditional expression (2), the difficulty of manufacturing the aspherical surface and the difficulty of guaranteeing the accuracy of the aspherical surface are relatively low. As a result, an optical system having good high resolution can be stably supplied. It is more preferable to set the upper limit of conditional expression (2) to 10.0 in order to achieve the above effects of the present invention more favorably.

Further, the force projection optical system according to another aspect of the present invention satisfies the following conditional expressions (3) and (4). In conditional expressions (3) and (4), A is the numerical aperture on the image side, Ym is the maximum image height, and M is the maximum of the optical surface having the largest effective radius among the optical surfaces in the projection optical system. It is a large effective radius, and L is the total length of the projection optical system (the distance between the object plane and the image plane).

32 <2 XM / (A ³ X Ym) <39 (3)

38 L / Ym 80 (4)

In the present invention, by satisfying the conditional expression (3), a good image-side numerical aperture A and a maximum image height Ym (fin, wide, effective image forming area) are ensured, It is possible to maintain a 2M aperture that can produce quality lens materials. By satisfying conditional expression (4), it is possible to keep the overall length L of the optical system relatively small while securing a large maximum image height Ym (and thus a large effective imaging area).

[0026] As a result, a sufficiently large resolving power was realized, and in the prior art, it was obtained by scanning exposure. High-throughput exposure can be realized according to the step-and-repeat method of exposing the exposure area collectively. In order to further exert the above-mentioned effects of the present invention, it is more preferable to set the upper limit of conditional expression (3) to 38.5 and set the lower limit to 34. In order to further exert the above effects of the present invention, it is more preferable to set the upper limit of conditional expression (4) to 70 and the lower limit thereof to 60.

In the present invention, it is preferable that all aspheric optical surfaces constituting the projection optical system satisfy the following conditional expression (5). In the conditional expression (5), S is the effective radius of each aspherical optical surface, and M is the maximum effective radius of the optical surface having the largest effective radius among the optical surfaces in the projection optical system as described above. It is.

S / M <0.90 (5)

[0028] When all the aspherical optical surfaces constituting the projection optical system satisfy the conditional expression (5), the difficulty in manufacturing the aspherical surface and the difficulty in guaranteeing the accuracy of the aspherical surface are relatively low. In addition, an optical system having good high resolution can be stably supplied.

As described above, the present invention provides a small, high-resolution projection optical system in which various aberrations are well corrected while securing a sufficiently large image-side numerical aperture and a sufficiently wide effective imaging area. Realization ability S can. Therefore, with the exposure apparatus equipped with the projection optical system of the present invention, it is possible to perform good projection exposure at high throughput and high resolution, and to manufacture good microdevices at high throughput and high resolution. it can.

An embodiment of the present invention will be described with reference to the accompanying drawings.

FIG. 1 is a diagram schematically showing a configuration of an exposure apparatus including a projection optical system according to an embodiment of the present invention. In FIG. 1, the Z axis is parallel to the optical axis AX of the projection optical system PL, the Y axis is parallel to the plane of FIG. 1 in a plane perpendicular to the optical axis AX, and the Y axis is in a plane perpendicular to the optical axis AX. Set the X-axis perpendicular to the paper surface in Fig. 1 and check.

The exposure apparatus shown in FIG. 1 includes a KrF excimer laser light source as a light source LS for supplying illumination light. The light emitted from the light source LS illuminates a reticle (mask) R as a projection master on which a predetermined pattern is formed, via an illumination optical system IL. The illumination optical system IL includes a fly-eye lens, an illumination aperture stop, a variable field stop (reticle blind), a condenser lens system, and the like for uniformizing the illuminance distribution of the exposure light. [0032] The reticle R is held in parallel with the XY plane on the reticle stage RS via the reticle holder RH. The reticle stage RS can be moved two-dimensionally along the reticle plane (that is, the XY plane) by the action of a drive system (not shown), and its position coordinates are determined by an interferometer RIF using a reticle moving mirror RM. It is configured to be measured and position controlled. Light from the pattern formed on the reticle R forms a reticle pattern image on the photoresist-coated wafer W (photosensitive substrate) via the projection optical system PL.

The projection optical system PL has a variable aperture stop AS (not shown in FIG. 1) arranged near the pupil position, and is substantially telecentric on both the reticle R side and the wafer W side. Is configured. Then, at the pupil position of the projection optical system PL, an image of the secondary light source on the illumination pupil plane of the illumination optical system is formed, and the light passing through the projection optical system PL illuminates the lens W in a Keller manner. The wafer W is held on a wafer stage WS via a wafer table (wafer holder) WT in parallel with the XY plane.

The wafer stage WS can be moved two-dimensionally along the wafer surface (that is, the XY plane) by the action of a drive system (not shown), and its position coordinates are determined by an interferometer WIF using a wafer moving mirror WM. And the position is controlled. Thus, in the present embodiment, the pattern of the reticle R is collectively exposed to each exposure area while the wafer W is two-dimensionally driven and controlled in a plane orthogonal to the optical axis AX of the projection optical system PL. The pattern of the reticle R is sequentially exposed on each exposure area of the wafer W by repeating the operation, that is, by a step-and-repeat method.

Hereinafter, each example of the projection optical system PL of the present embodiment will be described based on specific numerical examples. In each embodiment, all the optical members (the lens component and the plane-parallel plate) constituting the projection optical system PL are formed of quartz (Si〇). Also, the light source LS

2

The center wavelength of the laser beam supplied from the KrF excimer laser light source is 248. Onm, and the refractive index of quartz with respect to this center wavelength is 1.50839.

The projection optical system PL of each embodiment includes, in order from the reticle side, a first lens group G1 having a positive refractive power, a first relay system R12, a second lens group G2 having a negative refractive power, 2 relay system R23, third lens group G3 with positive refractive power, third relay system R34, fourth lens group G4 with negative refractive power, Equipped with a relay system R45, a fifth lens group G5 having a positive refractive power, a fifth relay system R56, and a sixth lens group G6 having a positive or negative refractive power.

In each embodiment, the height of the aspheric surface in the direction perpendicular to the optical axis is defined as y, and along the optical axis from the tangent plane at the vertex of the aspheric surface to a position on the aspheric surface at height y. When the distance (sag amount) is z, the vertex radius of curvature is r, the conic coefficient is κ, and the nth order aspheric coefficient is C and n, it is expressed by the following equation (a). In Tables (1) and (3) described below, asterisks (*) are attached to the right side of the surface numbers for lens surfaces formed in an aspherical shape.

^{+ C - y 4 + C -y} 6 + C -y 8 + C · ν 10 + · · · (a)

4 6 8 10

[First Example]

FIG. 2 is a diagram showing a lens configuration of a projection optical system according to the first embodiment. Referring to FIG. 2, in the projection optical system PL of the first embodiment, the first lens group G1 includes, in order from the reticle side, a biconvex lens L1 and a positive meniscus lens L2 having a convex surface facing the reticle side. ing. The first relay system R12 is composed of a negative meniscus lens L3 having an aspherical concave surface facing the wafer side. The second lens group G2 is composed of, in order from the reticle side, a biconcave lens L4 having an aspherical concave surface facing the wafer side, and a biconcave lens L5.

[0039] The second relay system R23 includes a positive meniscus lens L6 having an aspherical concave surface facing the reticle side. The third lens group G3 includes, in order from the reticle side, a biconvex lens L7, a biconvex lens L8, a biconvex lens L9, and a positive meniscus lens L10 having a convex surface facing the reticle side. The third relay system R34 is composed of a positive meniscus lens L11 having an aspherical concave surface facing the wafer side. The fourth lens group G4 includes, in order from the reticle side, a plano-concave lens L12 having a flat surface facing the reticle side, a biconcave lens L13, a biconcave lens L14 having an aspherical concave surface facing the wafer side, and a concave surface on the reticle side. And a positive meniscus lens L15.

[0040] The fourth relay system R45 includes a positive meniscus lens L16 having an aspherical concave surface facing the reticle side. The fifth lens group G5 includes, in order from the reticle side, a positive meniscus lens L17 having a concave surface facing the reticle side, a biconvex lens L18, an aperture stop AS, and a reticle side. A positive meniscus lens L19 having a convex surface facing the lens, a biconvex lens L20, and a positive meniscus lens L21 having a convex surface facing the reticle side.

The fifth relay system R56 is composed of a positive meniscus lens L22 having an aspherical concave surface facing the wafer side. The sixth lens group G6 includes, in order from the reticle side, a positive meniscus lens L23 having an aspherical concave surface facing the wafer side, and a biconcave lens L24. A first plane-parallel plate P1 is disposed in the optical path between the reticle R and the first lens group G1, and a second plane-parallel plate is disposed in the optical path between the sixth lens group G6 and the wafer W. P2 is located.

[0042] The following Table (1) lists values of specifications of the projection optical system according to the first example. In the main specifications of Table (1), λ is the center wavelength of the exposure light, / 3 is the projection magnification, Α is the number of apertures on the image side (wafer side), Ym is the maximum image height (image field radius), L represents the total length of the optical system. In the optical member specifications in Table (1), the surface number indicates the order of the surface from the reticle side, r indicates the radius of curvature of each optical surface (vertical radius of curvature: mm for an aspheric surface), and d indicates The on-axis spacing of each optical surface, that is, the surface spacing (mm), and D (S) indicates the effective radius (mm) of each optical surface. The above notation is also applied to the following tables (2) and (3).

[0043] Table (1)

(Main specifications)

λ = 248. Onm

β = -1/4

Α = 0.74

Ym = 21. lmm

L = 1350mm

(Optical component specifications)

Surface number r d D (S) Optical material

(Reticle surface) 35.0000

1 ∞ 8.0000 90.99 Quartz (P1)

2 ∞ 3.0000 91.98 ZG'96 6 Z 'l 9 SL'LfL * 0G

0ΖΊ8 OOOO'SI 6S6.9 G 62

Ϊ9Ί8 IZ69 "6 ^ 9Ζ8Ι8Έ9Ι 82

(εη) S0'88 OOOO'SI 90869

99Έ8 SZIZ "6G 11089'891 92

S6'90I OOOO'QI o 92

OVLZl Ζ9999999Ι ^ Z

(in) 0880'S Ζΐ999 "9Ζ2 ZZ οοοο'τ 88 S'968S ZZ

(0X1) sws IZ

98 9Ϊ οοοο'τ 60866Έ ΐΐ- oz

(61) 06

Ϊ8 · ΐ9ΐ οοοο'τ 0UZVZ0-SI

(81) ΐ09ΐ 0SS6'8 SO '862ΐ LI ε'6 τ οοοο'τ% S69'0 ε-91

ST

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Z £ L800 / 00ZdT / 13d C ^ SIOO / SOOZ OAV _ZI _0IXS6Z ^ I!-= O ₈ _0IX 10X68 '-= O

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0 = ass

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0 =

0I X ^ 0SX9 '9- 01 X88959 Έone = ζεζ 0I XSSS9I' 8 = 〇 _0I XS60 ^ 9-= O, _T _0X XX ^ 8XS -Z = D ₆ _οχχεχεε6 '8_ = o

0 = ^y

Π

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0XX968e0 'Z = D _c 01 X 18690 Έ = O

0 =

Sex

Π

0I X6IIZZ '6_ = O 01 X88Z96 "S = O

! ^ 01 X868X9 'ΐ—: 〇 0I XZSI06 Ί- = O

'= D. Οΐ Χ SS 0 'S = O

0 =

Π Zl

01 X69 ^ 98 "I- D D

〇 0I XZ0880 Έ-

Z £ L800 / 00Zdr / 13d : 0

26 -29

C = -1.05080X10 C = 1.08829X10

12

49 faces

κ = 0

C = -5.662532X 10 c =-1.08187X10

4 6

16

C = -9.60476 X 10 c = 5.14790X10

Ten

-twenty four

C = 9.21431X10 C =]. 11743X10-2

(Values for conditional expressions)

M = 161.90mm

(1) I (Ni-Nr) X 2 X D / R: 0.002 (L17 reticule side)

(N -Nr) X 2 XD / R = 0.342 (U-side of L17, side) (N -Nr) X 2 XD / R = 0.070 (L18 of L18) (N -Nr) X 2 XD / R = 0.368 (L18 Ueno side) (N-Nr) X 2 XD / R = 0.225 (L19 reticule) (N-Nr) X 2 XD / R = 0.041 (L19 Ueno side) ) (N: = 0.385 (L20 reticule J) (N:-Nr) X 2 XD / R = 0.033 (L20 Ueno side) (N: = 0.615 (L21 reticule)

(Ni-Nr) X 2 X D / R = 0.157 (Leno side of L21) (2) S / Ym = 3.88 (8th surface)

S / Ym = 4.15 (Stage 10)

S / Ym = 5.65 (Section 13)

S / Ym = 6.04 (Section 24)

S / Ym = 4.52 (Stage 30)

S / Ym = 6.43 (Section 33)

S / Ym = 4.04 (Section 47) S / Ym = 2.40 (Stage 49)

(3) 2 X M / (A X Ym) = 37.870

(4) L / Ym = 63. 981

(5) S / M = 0.506 (Stage 8)

S / M = 0.540 (Stage 10)

S / M = 0.736 (Section 13)

S / M = 0.787 (Section 24)

S / M = 0.589 (Stage 30)

S / M = 0.838 (Surface 33)

S / M = 0.526 (Surface 47)

S / M = 0.313 (Stage 49)

FIG. 3 is a diagram illustrating the lateral aberration in the first example. In the aberration diagram, Y indicates the image height (mm). As is clear from the aberration diagrams, in the first embodiment, a large image-side numerical aperture of A = 0.74 and a large maximum image height (and a large image field) of Ym = 21.1 mm are secured. Regardless, it can be seen that various aberrations are satisfactorily corrected.

[Second Example]

FIG. 4 is a diagram illustrating a lens configuration of a projection optical system according to a second embodiment. Referring to FIG. 4, in the projection optical system PL of the second embodiment, the first lens group G1 includes, in order from the reticle side, a biconvex lens L1 and a negative meniscus lens L2 having a convex surface facing the reticle side. ing. The first relay system R12 is composed of a negative meniscus lens L3 having an aspherical concave surface facing the wafer side. The second lens group G2 includes, in order from the reticle side, a biconcave lens L4 having an aspherical concave surface facing the wafer side, and a negative meniscus lens L5 having a concave surface facing the reticle side.

The second relay system R23 includes a positive meniscus lens L6 having an aspherical concave surface facing the reticle side. The third lens group G3 includes, in order from the reticle side, a biconvex lens L7, a biconvex lens L8, a biconvex lens L9, and a positive meniscus lens L10 having a convex surface facing the reticle side. The third relay system R34 has an aspherical concave surface facing the wafer side. It consists of a positive meniscus lens LI1. The fourth lens group G4 includes, in order from the reticle side, a plano-concave lens L12 having a flat surface facing the reticle side, a biconcave lens L13, a biconcave lens L14 having an aspheric concave surface facing the wafer side, and a concave surface on the reticle side. And a positive meniscus lens L15.

The fourth relay system R45 includes a positive meniscus lens L16 having an aspherical concave surface facing the reticle side. The fifth lens group G5 includes, in order from the reticle side, a biconvex lens L17, a positive meniscus lens L18 having a convex surface facing the reticle side, an aperture stop AS, a positive meniscus lens L19 having a convex surface facing the reticle side, and a biconvex lens. L20.

The fifth relay system R56 is composed of, in order from the reticle side, a positive meniscus lens L21 having a convex surface facing the reticle side, and a positive meniscus lens L22 having a non-spherical concave surface facing the wafer side. The sixth lens group G6 includes, in order from the reticle side, a positive meniscus lens L23 having an aspherical concave surface facing the wafer side, and a biconcave lens L24. A first plane-parallel plate P1 is disposed in the optical path between the reticle R and the first lens group G1, and a second plane-parallel plate is disposed in the optical path between the sixth lens group G6 and the wafer W. P2 is located. Table 2 below summarizes the data values of the projection optical system of the second embodiment.

[0049] Table (2)

(Main specifications)

λ = 248. Onm

β = -1/4

Α = 0.76

Ym = 21. lmm

L = 1400mm

(Optical component specifications)

Surface number r d D (S) Optical material

(Reticle surface) 35.0000

1 ∞ 8.0000 91.17 Quartz (P1)

2 ∞ 3.0000 92.19

3 207.15731 41.7507 97.49 Quartz (L1) (sn) 99Έ0Ι 969 ^ ιζοοθ'ΐζε- IG

96Ό0Ι GIZZ'GG ^ βδ'ΟΙΟΙ * 0G

IVZS OOOO'SI 9S8Sr8SI- 62

ZO'28 00968'991 82

(εη) Γ98 OOOO'SI 6Ζΐε9 · 86Ι- LZ

0998 sis zf 88 89'Ζ8ΐ 92

9ε '£ 0ΐ OOOO'QI o 92

% · 2ΐ T092 "68 090H6S ^ fZ

(in) es-τετ 69 ε'ο ZZ wi οοοο'τ 90689-82SI ZZ

(on) 0 9'9 6 εε9'062 IZ οεε9τ 0000Ί εε ΐ2'682τ- OZ

(61) 6 '9ΐ S920'9 εε 61

IS '9ΐ 0000Ί S6W0'09-SI

(81)% 29 s 8Sεεπ LI οτ8 τ οοοο'τ LLlWf6Z- 91

(Ί) 6H80 8S Z9 089I 91

(9¾ ¾a 6ΖΈΙΙ OOOO'SI 8606

16'ZU 068 SI ΙΙ699

(31) 6976 OOOO'SI SL9WKZ- Π

0VL6 ZZZ \ U ZZ \ * 0ΐ

6 '8 OOOO'SI 6Ζ0ΙΓ00Ζ- 6

0 '8 90' * 8

(ει) ZV6S 0000'9ΐ 899S6'60S L

6S'68 66S0 "2T S 6LZ'LLl 9

(s) SS '6 0000 "5ΐ UZ6'6 S

ZZ "96 ooocn 89S99" S88- f

Z £ L800 / 00ZdT / 13d LY C ^ SIOO / SOOZ OAV _IZ _0IX06SS9 = D 0IXSSS6 'ΐ = O

ε _ΐ _οχχζζζ8θ

Ο

0 = ^y deer 8

6L'Z £ ΟΟΟΟ'ΟΙ ο G9

(Sd) SF9S 0000

οε'9ε mv \ 989ΖΓ809 ^ TS

6 9 0000 S ^ ZWLZLZ- OS

IYZ ZLWL εεο 'so2 * 6 εο-ΐ9 S60S "6T οεοζ9 · 9 τ 8

Ϊ9Έ8 SSO'SS

(SSI) 62 "90I 0000 9 τ9ζε6'6 τ 9f θ9οετ lf06L'fLZ f

(xsi) 26 · τ τ ZI66 "S 06 9 '66 ΐ ff

8εΐ9ΐ 0000'ΐ £ f

(OS!) Fl '£ 9l Ζ0Ζ9Έ9 εοζεο'ζζε Zf l £' £ 9l 088 IS 6

(6Π) 99Έ9Ι 0000'OG 6SZWL S Of

(sv) 809ΐ 9669Ί8 o 6G ε9ΐ 0 892 £ 8Ζ98Ζ88Ι 8G

(8Π) ΪΖΈ9Ι OOOO'OG 9WZ89 ZG

8 Έ9ΐ ΙΖ0Ζ £ '61 Ζ- 9G

Un) 609ΐ 9G

20 · 8 τ οοοο'τ 682'Z6S- ε

(9Π) ιζ η οπ9-ζε 00000 000Ϊ- * εε οοοο'τ \ fzn-

ZC.800 / l700Zdf / X3d 81C ^ SIOO / SOOZ OAV

01 C9X = o / H

-8

8X10 c -12

C = 2.425815813X10

Four

-18 21

C = 5.40360X10 C = 4. 18934X10

8 10

c -29

-2. 15463X10 C = 2.91598X10

12

49 faces

κ = 0

-12

C = -5. 49900X10 C = -9. 27298X10

-16-21

C = -9. 50711X10 C = -9. 41177X10

Ten

c -24 -27

59880X 10 C = 2.30786X10

14

(Values for conditional expressions)

M = 164.51mm

(1) I (Ni-Nr) X 2 X D / R | = 0.034 (LI 7 reticle side)

(N — Nr) X 2 XD / R | = 0.595 (Wrench side of LI 7) (N -Nr) X 2 XD / R: 0.244 (L18 reticle side) (N -Nr) X 2 XD / R: 087 (L18 Ueno side) (N -Nr) X 2 XD / R: 0.194 (L19 reticle side) (N-Nr) X 2 XD / R: 0.050 (L (N-Nr) X 2 XD / R = 0.509 (L20 reticle side) (N: = 0.37 (L20 eno side)

(2) S / Ym = = 4.16 (Stage 8)

S / Ym = 4 60 (Surface 10)

S / Ym = 5 39 (Section 13)

S / Ym = 5 92 (Surface 24)

S / Ym = 4 78 (Surface 30)

S / Ym = 6 79 (Section 33)

S / Ym = 3 96 (Surface 47)

S / Ym = 2 47 (Stage 49)

(3) 2XM / (A ³ XYm) = 35.

(4) L / Ym = 66.351 (5) S / M = = 0 · 533 (Side 8)

S / M = 0.590 (Stage 10)

S / M = 0.692 (Stage 13)

S / M = 0.760 (Section 24)

S / M = 0.614 (Stage 30)

S / M = 0.871 (Section 33)

S / M = 0.508 (Surface 47)

S / M = 0.317 (Stage 49)

FIG. 5 is a diagram showing the lateral aberration in the second example. In the aberration diagram, Y indicates the image height (mm). As is clear from the aberration diagrams, in the second embodiment, a large image-side numerical aperture of A = 0.76 and a large maximum image height of Ym = 21.1 mm (and a large image field) are secured. Regardless, it can be seen that various aberrations are satisfactorily corrected.

[Third embodiment]

FIG. 6 is a diagram illustrating a lens configuration of a projection optical system according to a third embodiment. Referring to FIG. 6, in the projection optical system PL of the third embodiment, the first lens group G1 includes, in order from the reticle side, a biconvex lens L1 and a negative meniscus lens L2 having a convex surface facing the reticle side. ing. The first relay system R12 is composed of a negative meniscus lens L3 having an aspherical concave surface facing the wafer side. The second lens group G2 includes, in order from the reticle side, a biconcave lens L4 having an aspherical concave surface facing the wafer side, and a negative meniscus lens L5 having a concave surface facing the reticle side.

[0052] The second relay system R23 includes a positive meniscus lens L6 having an aspherical concave surface facing the reticle side. The third lens group G3 includes, in order from the reticle side, a biconvex lens L7, a biconvex lens L8, a biconvex lens L9, and a positive meniscus lens L10 having a convex surface facing the reticle side. The third relay system R34 is composed of a positive meniscus lens L11 with the aspherical concave surface facing the wafer side. The fourth lens group G4 includes, in order from the reticle side, a biconcave lens L12, a biconcave lens L13, and a biconcave lens L14 having an aspherical concave surface facing the wafer side. [0053] The fourth relay system R45 includes a positive meniscus lens L15 having an aspherical concave surface facing the reticle side. The fifth lens group G5 includes, in order from the reticle side, a positive meniscus lens L16 having a concave surface facing the reticle side, a positive meniscus lens L17 having a concave surface facing the reticle side, a biconvex lens L18, an aperture stop AS, It comprises a convex lens L19, a biconvex lens L20, and a positive meniscus lens L21 with the convex surface facing the reticle side.

The fifth relay system R56 includes, in order from the reticle side, a positive meniscus lens L22 having an aspheric concave surface facing the wafer side, and a negative meniscus lens L23 having an aspheric concave surface facing the wafer side. Being done. The sixth lens group G6 includes, in order from the reticle side, a positive meniscus lens L24 having a convex surface facing the reticle side, and a negative meniscus lens L25 having a concave surface facing the reticle side. A first plane-parallel plate P1 is disposed in the optical path between the reticle R and the first lens group G1, and a second plane-parallel plate P2 is disposed in the optical path between the sixth lens group G6 and the wafer W. Is arranged. The following Table 3 shows values of specifications of the projection optical system according to the third example.

[0055] Table (3)

(Main specifications)

λ = 248. Onm

β = -1/4

Α = 0.78

Ym = 20.4 mm

L = 1350mm

(Optical component specifications)

Surface number r d D (S) Optical material

(Reticle surface) 35.0000

1 ∞ 8.0000 88.55 Quartz (P1)

2 ∞ 3.0000 89.59

3 221.92198 37.6789 94.37 Quartz (L1)

4 -801.14546 1.0000 93.99

5 240.90313 18.4939 91.20 Quartz (L2) / vD / OS / -800saoifcId ssiiAV οΐδεεζ ssrsl 9,

() 2

() 3 δ9∞

CO CM)

(Word)

()

(3S 9∞

()

(3S 0∞6000000oooov £

00001rzzz S £-

(395½ ££ _ΐΖ _οχχζο698

ο

ε _ΐ _0ΧΧ88Ι ^ 'S_ = ⁹ 0 ₈ _0IXZI9S0' 6- = 0

0 = ^y deer 8

(Sd) 0000 'οο S

99 "9S οοοο'τ 8ΐ · οεο6ε-es

(esi) 0000 '

ZYZ οε s's L0LLV6 ZI TS

(si) ^ 98'6ΐΐ OS

WZ9 οοοο'τ 6666 · 6δΐ * 6

(8S1) 96 0660 9802ΓΠ9Ϊ 8

ZZSZ "9T 968sr sn

(SSI) 0000 9 9f

6 '9W 0000'ΐ ε6ε'9ΐ8τ 9

ZV0 1 ΐ6εε½ ff

6S 91 0000'ΐ ΖΙΖΙ9990ε- £ f

(OS!) 89Έ9Ι ^ Sf 'flf Zf

92 ^ 91 9Ζ9ΖΈΖ 9Z698'SW8- If

(6Π) £ Vf9l 0000'OG 099Sr60ZI Of

(sv)) 9ΐ 996Ζ'99 ο 6G

£ Vf9l 9009'ΐ 6 W90 (H-8G

(8Π) 90 '91

ZG

9Γ69Ϊ οοοο'τ 06 '0-98 an) WL 1 9886Ό ^ 0Z8S "80Z9- se

9δ8 τ οοοο'τ LL £ 0Z'fL £-ε

Z £ L800 / 00ZdT / 13d C ^ SIOO / SOOZ OAV -29

C = -1.88209X10 C 3. 20083X10

12 14

10 faces

κ = 0

—8 -13

C = 4.09576X10 C = 3.89039X10

twenty one

C = -3.48755 X 10 C-= — 1. 18440X10

-twenty five

C = 1.41439X10 C = -4.60674X10

12

13 faces

K = 0

—9

C = 2.86051X10 C = 2. 93148X10

4 6

-18 22

C = 2.22094X10 C =] 60840X10

-27 -31

C = -1.39318X10 C = 5.19200X10

12

24 faces

K 0

c -8.53333X10 C = -2.10086X10 c-8.25947X10 C -4. -23

76942X10

-27-2 = 4.31

C 61828X10 C =-1. 30652X10

1

30 faces

0

-8

C = 2.37553X10 c ■ 12

X10

c = -26 32

83271X10 C = 7.65773X10

12-

31 faces

κ = 0

—9

C = -5.85776X10 c 13

-1. 51928X 10

6 =-18

C = 5.20453X10 c =--22

-2. 85614X 10

31

C = 8.51498X10 C = -2.10437X10

12

47 faces

κ = 0 -8

C = 2.55977X10 c--4.87831X10

4 6

-17 -21

C = 3.11699X10 c -1.10597X10

8 10

-26 -31

C = 4.39420X10 C -3.82427X10

12

49 faces

K = 0

C = -9.20918X10 C = -7.21894X10

4 6

16 0

C = -5.45385X10 c -2

= _5.70530X 10

Ten

-twenty four

C = 8.17862X10 ', C = -2.72052X10

12

(Values for conditional expressions)

M = 164.43mm

(1) I (Ni-Nr) X2XD / R = 0.093 (Reticole side of LI 6)

(Ni-Nr; X 1 = 0.403 CLl 6 wafer side) (Ni-Nr 2XD / R 1 = o. 028 (L17 reticle side) (Ni-Nr 2XD / R 1 = o. 400 (L17 Ueno, side) (Ni-Nr 1 = o. 180 (L18 reticle side) (Ni-Nr 1 = o. 166 (L18 wafer side) (Ni-Nr 2XD / R 1 = o. 098 (L19 reticle Side) (Ni-Nr 2XD / R 1 = o.021 (Lenovo side of L19) (Ni-Nr 1 = o.351 (Ni-Nr X2 XD / R 1 = o. 608 (L21 reticle side) (Ni-Nr X2XD / R 1 = o. 082 (L21 Ueno side)

(2) S / Ym = 4.03 (Side 8)

S / Ym = 4.58 (Stage 10)

S / Ym = 5.58 (Stage 13)

S / Ym = 5.62 (Surface 24)

S / Ym = 4.93 (Surface 30)

S / Ym = 5.97 (Stage 31) S / Ym = 5.14 (Section 47)

S / Ym = 2.96 (Stage 49)

(3) 2 XM / (A ³ X Ym) = 33.970

(4) L / Ym = 66.176

(5) S / M = 0.517 (Side 8)

S / M = 0.588 (Stage 10)

S / M = 0.716 (Section 13)

S / M = 0.722 (Section 24)

S / M = 0.633 (Stage 30)

S / M = 0.767 (Stage 31)

S / M = 0.659 (Surface 47)

S / M = 0.380 (Stage 49)

FIG. 7 is a diagram illustrating the lateral aberration in the third example. In the aberration diagram, Y indicates the image height (mm). As is clear from the aberration diagrams, in the third embodiment, a large image-side numerical aperture of A = 0.78 and a large maximum image height of Ym = 20.4 mm (and a large image field) are secured. Regardless, it can be seen that various aberrations are satisfactorily corrected.

As described above, in each embodiment, for the KrF excimer laser light having a wavelength of 248. Onm, a large image-side numerical aperture of Α = 0.74-0.78 is secured, and Ym = 21. A large image field of 1 mm or 20.4 mm can be secured. As a result, in the first embodiment and the second embodiment, a circuit pattern can be exposed at a high resolution according to the step-and-repeat method in a rectangular exposure area of, for example, 33 mm × 26 mm. . In the third embodiment, a circuit pattern can be exposed at a high resolution in a rectangular exposure area of, for example, 32 mm × 25 mm in accordance with a step-and-repeat method.

In the exposure apparatus of the above-described embodiment, the reticle (mask) is illuminated by the illumination system (illumination step), and the transfer pattern formed on the mask is exposed on the photosensitive substrate using the projection optical system ( Exposure process) allows micro devices (semiconductor devices, image sensors, liquid crystal displays Element, thin-film magnetic head, etc.). Hereinafter, with reference to the flow chart of FIG. 8, an example of a method for obtaining a semiconductor device as a micro device by forming a predetermined circuit pattern on a wafer or the like as a photosensitive substrate using the exposure apparatus of the present embodiment. Will be explained.

First, in step 301 of FIG. 8, a metal film is deposited on one lot of wafers. In the next step 302, a photoresist is applied on the metal film on the one lot wafer. Thereafter, in step 303, using the exposure apparatus of the present embodiment, an image of the pattern on the mask is sequentially exposed and transferred to each shot area on the wafer of the lot through the projection optical system. Then, in step 304, the photo resist on the one lot of wafers is developed, and in step 305, the pattern on the mask is etched by etching the one lot of wafers using the resist pattern as a mask. A corresponding circuit pattern is formed in each shot area on each wafer.

Thereafter, a device such as a semiconductor element is manufactured by forming a circuit pattern of an upper layer and the like. According to the above-described semiconductor device manufacturing method, a semiconductor device having an extremely fine circuit pattern can be obtained with good throughput. In step 301-step 305, a metal is vapor-deposited on the wafer, a resist is applied on the metal film, and the force of performing each of the steps of exposure, development, and etching is performed on the wafer prior to these steps. After the silicon oxide film is formed on the silicon oxide film, it is needless to say that a resist may be applied on the silicon oxide film, and the respective steps such as exposure, development, and etching may be performed.

In the exposure apparatus of the present embodiment, a liquid crystal display element as a microdevice can be obtained by forming a predetermined pattern (circuit pattern, electrode pattern, etc.) on a plate (glass substrate). . Hereinafter, an example of the technique at this time will be described with reference to the flowchart in FIG. In FIG. 9, in a pattern forming step 401, a so-called optical lithography process of transferring and exposing a mask pattern onto a photosensitive substrate (eg, a glass substrate coated with a resist) using the exposure apparatus of the present embodiment is performed. . By this photolithography process, a predetermined pattern including a large number of electrodes and the like is formed on the photosensitive substrate. After that, the exposed substrate is subjected to various steps such as a developing step, an etching step, and a resist removing step. As a result, a predetermined pattern is formed on the substrate, and the process proceeds to the next color filter forming step 402.

[0062] Next, in the color filter forming step 402, a large number of sets of three dots corresponding to R (Red), G (Green), and B (Blue) are arranged in a matrix, or R, G, A color filter is formed by arranging a plurality of sets of filters of three stripes B in the horizontal scanning line direction. Then, after the color filter forming step 402, a cell assembling step 403 is performed. In a cell assembling step 403, a liquid crystal panel (liquid crystal cell) is assembled using the substrate having the predetermined pattern obtained in the pattern forming step 401, the color filter obtained in the color filter forming step 402, and the like. In the cell assembling step 403, for example, a liquid crystal is injected between the substrate having the predetermined pattern obtained in the pattern forming step 401 and the color filter obtained in the color filter forming step 402, and a liquid crystal panel ( Liquid crystal cell).

Thereafter, in a module assembling step 404, components such as an electric circuit and a backlight for performing a display operation of the assembled liquid crystal panel (liquid crystal cell) are attached to complete a liquid crystal display element. According to the above-described method for manufacturing a liquid crystal display device, a liquid crystal display device having an extremely fine circuit pattern can be obtained with high throughput.

In the above-described embodiment, the present invention is applied to the step-and-repeat type exposure apparatus that collectively exposes the pattern of the reticle R to each exposure area of the wafer W. However, the scanning and exposing of the pattern of the reticle R on each exposure area of the wafer W while moving the wafer W and the reticle R relatively to the projection optical system PL are not limited to this. The present invention can also be applied to a scanning type exposure apparatus.

In the above-described embodiment, a KrF excimer laser light source that supplies 248. Onm wavelength light is used, but light having a predetermined wavelength that is not limited to this (for example, light from an ArF excimer laser) is used. The present invention can be applied to any other suitable light source that supplies light having a wavelength of 193 nm and i-line (365 nm) from a mercury lamp. Further, in the above-described embodiment, the present invention is applied to the projection optical system mounted on the exposure apparatus. Applying I don't know

Explanation of symbols

LS light source

IL illumination optical system

R Rechikunore

RS Reticle stage PL Projection optical system W Wafer

WS Wafer stage G1 First lens group G2 Second lens group G3 Third lens group G4 Fourth lens group G5 Fifth lens group G6 Sixth lens group R12 First relay system R23 Second relay system R34 Third relay system R45 4 relay system R56 5th relay system Li lens component

AS aperture stop

PI, P2 Parallel flat plate

Claims

The scope of the claims

[1] In a projection optical system that forms a reduced image of the first surface on the second surface,

From the first surface side in the order of light incidence,

A first lens group having a positive refractive power,

A first relay system including at least one aspheric optical surface;

A projection optical system, comprising: a sixth lens group having a positive refractive power or a negative refractive power.

[2] In a projection optical system that forms a reduced image of the first surface on the second surface,

A first relay system disposed in an optical path between the first lens group and the second surface, the first relay system including at least one aspherical optical surface;

A third relay system disposed in an optical path between the third lens group and the second surface, the third relay system including at least one aspherical optical surface; A fourth lens group disposed in an optical path between the third relay system and the second surface and including at least two negative lenses and having a negative refractive power;

A projection optical system, comprising: a sixth lens group disposed in an optical path between the fifth relay system and the second surface and having a positive refractive power or a negative refractive power.

3. The projection optical system according to claim 1, wherein the fourth lens group includes at least three negative lenses.

[4] The projection optical system is substantially telecentric on both the first surface side and the second surface side,

4. The projection optical system according to claim 1, wherein an aperture stop having a variable aperture is disposed in an optical path of the fifth lens group.

5. The second lens group according to claim 1, wherein the second lens group includes only a negative lens.

4. The projection optical system according to item 1.

6. The third lens group according to claim 1, wherein the third lens group includes only a positive lens.

5. The projection optical system according to item 1.

[7] For all the optical surfaces constituting the fifth lens group, the radius of curvature of each optical surface is R, the effective radius of each optical surface is D, the refractive index on the incident side of each optical surface is Ni, and When the refractive index on the exit side of the optical surface is Nr,

I (Ni-Nr) X 2 X D / R | <0.62

The projection optical system according to any one of claims 1 to 6, wherein the following condition is satisfied.

[8] When the effective radius of the aspherical optical surface included in the projection optical system is S and the maximum image height is Ym, all the aspheric optical surfaces included in the projection optical system are S / Ym <10.8

The projection optical system according to any one of claims 1 to 7, wherein the following condition is satisfied.

[9] In a projection optical system that forms a reduced image of the first surface on the second surface,

The numerical aperture on the image side is A, the maximum image height is Ym, the maximum effective radius of the optical surface having the largest effective radius among the optical surfaces in the projection optical system is M, and the total length of the projection optical system is

When L

32 <2 XM / (A ³ X Ym) <39

38 L / Ym 80

A projection optical system that satisfies the following condition:

[10] The projection optical system includes at least one aspherical optical surface,

All the aspherical optical surfaces in the projection optical system have the effective radius of each aspherical optical surface as s, and the maximum of the optical surfaces having the largest effective radius among the optical surfaces in the projection optical system. When the effective radius is M,

S / M-ku 0.90

The projection optical system according to any one of claims 1 to 9, wherein the following condition is satisfied.

[11] From the first surface side, in the order of incidence of light,

A first lens group having a positive refractive power,

A first relay system including at least one aspheric optical surface;

A fifth lens group including at least two positive lenses and having a positive refractive power; a fifth relay system including at least one aspheric optical surface; 10. The projection optical system according to claim 9, further comprising: a sixth lens group having a positive refractive power or a negative refractive power.

12. The projection optical system according to claim 11, wherein the fourth lens group includes at least three negative lenses.

[13] The projection optical system is substantially telecentric on both the first surface side and the second surface side,

13. The projection optical system according to claim 11, wherein an aperture stop having a variable aperture is arranged in an optical path of the fifth lens group.

14. The projection optical system according to claim 11, wherein the second lens group includes only a negative lens.

15. The projection optical system according to claim 11, wherein the third lens group includes only a positive lens.

[16] For all the optical surfaces constituting the fifth lens group, the radius of curvature of each optical surface is R, the effective radius of each optical surface is D, the refractive index on the incident side of each optical surface is Ni, and When the refractive index on the exit side of the optical surface is Nr,

I (Ni-Nr) X 2 X D / R | <0.62

The projection optical system according to any one of claims 11 to 15, wherein the following condition is satisfied.

[17] When the effective radius of the aspherical optical surface included in the projection optical system is S and the maximum image height is Ym, all the aspheric optical surfaces included in the projection optical system are

S / Ym <10.8

17. The projection optical system according to claim 11, wherein the following condition is satisfied.

[18] All the aspherical optical surfaces in the projection optical system have an effective radius of each aspherical optical surface as S, and an optical surface having the largest effective radius among the optical surfaces in the projection optical system. When the maximum effective radius of the surface is M,

S / M <0.90

The projection according to any one of claims 11 to 17, wherein the following condition is satisfied. Optical system.

[19] An illumination system for illuminating the mask set on the first surface, and an image of a pattern formed on the mask on a photosensitive substrate set on the second surface. An exposure apparatus comprising: the projection optical system according to Item 4;

20. The exposure apparatus according to claim 19, wherein the exposure is performed with the mask and the photosensitive substrate relatively stationary with respect to the projection optical system.

[21] An illumination step of illuminating the mask set on the first surface, and a pattern of the mask illuminated by the illumination step via the projection optical system according to any one of claims 1 to 18. A method of exposing the photosensitive substrate set on the second surface to a photosensitive substrate, and a developing step of developing the photosensitive substrate exposed by the exposing step. .

22. The device manufacturing method according to claim 21, wherein, in the exposing step, the exposure is performed with the mask and the photosensitive substrate relatively stationary with respect to the projection optical system.