CN1417610A - Projection optical system, explosure device and making process of equipment - Google Patents
Projection optical system, explosure device and making process of equipment Download PDFInfo
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- CN1417610A CN1417610A CN02146669A CN02146669A CN1417610A CN 1417610 A CN1417610 A CN 1417610A CN 02146669 A CN02146669 A CN 02146669A CN 02146669 A CN02146669 A CN 02146669A CN 1417610 A CN1417610 A CN 1417610A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
This invention is directed to a projection optical system. This system has a two-sided telecentric structure. Various kinds of materials of glass decrease the deterioration of a projected image, which is caused by absorbing the materials. A sufficiently large numerical aperture and a wide exposure region are maintained. This projection optical system can correct the spherical aberration. In the projection optical system for projecting a pattern of a first object R onto a second object W, the projection optical system has various kinds of materials of glass with refraction index over 1.57. When the focus length of the negative lens L511 nearest to the image side is f, the distance between the first object and the second object is, and the refraction index of the negative lens is n, a condition of |f/L| < 0.25 and n <= 1.55 is satisfied. The projection optical system has at least an aspherical lens (ASP1-ASP4).
Description
Technical field
What the present invention relates to is with the projection optical system on image projection to the 2 objects of the pattern of an object and the exposure device that has this projection optical system, use when in the photo-mask process of making semiconductor element, liquid crystal display cells etc. the figure of mask being duplicated on substrate, and the manufacture method of using the equipment (semiconductor element, imaging apparatus, liquid crystal display cells, thin-film head etc.) of this exposure device.
Background technology
When making semiconductor element etc., by projection optical system, use be will as the copying image of the figure of the first minification mask plate of mask on the wafer that has applied resist (perhaps glass sheet etc.) single exposure type (in batches waiting) and the projection aligner of the scan exposure type as the substep scan mode.Along with the development of the microminiaturization of the figure of SIC (semiconductor integrated circuit) etc.,, wish that especially it has good definition for projection optical system with this exposure device.In order to improve the definition of projection optical system, can consider to shorten exposure wavelength or increase numerical aperture (N.A.).
Therefore, in recent years, for the light of exposure, employing be mercury vapor lamp from g line (436nm) to i line (365nm), main employing be i line (365nm).And recently, then develop into and adopt the shorter light of wavelength to be used for exposure, developed the projection optical system that under the light of short wavelength's exposure, can use.
In addition, in projection optical system, when improving definition, also become strict more for the requirement of lowering image distortion.Here said image distortion, except resulting from the distortion (crooked aberration) of projection optical system, the bending of the wafer that the imaging side of projection optical system of resulting from addition is residual etc., and result from the object side of projection optical system, engraved the bending of the first minification mask plate of circuitous pattern etc.
In recent years along with the microminiaturization of growing copy pattern, become strict more for the requirement of lowering image distortion.Therefore, because the influence that image distortion brought that the bending of wafer produces, and compared originally in order to reduce, employing be that position with the ejaculation pupil of the imaging side of projection optical system is arranged at a distance promptly so-called imaging side telecentric optical system.On the other hand, in order to alleviate because the image distortion that the bending of first minification mask plate causes, also can consider the entrance pupil position of projection optical system is located at the position far away apart from object plane, promptly adopt so-called object side telecentric optical system, in addition, such entrance pupil position with projection optical system also having occurred is arranged on apart from the scheme of object plane than the distant positions place.
Summary of the invention
Use in order to improve definition under short wavelength's the situation of light of exposure, owing to have the low problem of transmissivity of the glass material that constitutes projection optical system, so in order to guarantee that the glass material that high-transmission rate can use is very limited.And transmissivity is lowly brought is not only loss on the light quantity, and the part of loss is absorbed by glass material, becomes heat and causes the variation of inner refractive index, the distortion of lens surface, result to become the main cause that causes imaging performance low.In addition, though in order to obtain high degree of resolution in roomy zone, be necessary to carry out revisal for chromatic aberation, lowering chromatic aberation in limited glass material, is very difficult.
Problem of the present invention provides projection optical system, though its heart type far away that is both sides, but can suppress owing to of the deterioration of employed glass material for the imaging performance that absorption brought of the light of exposure, and can guarantee sufficient enough big numerical apertures and roomy exposure area, can also carry out revisal well for each aberration.And provide the exposure device with this projection optical system and the manufacture method of equipment.
The 1st kind of projection optical system provided by the invention is the projection optical system of graphic projection on the 2nd object with the 1st object; The feature of above-mentioned projection optical system is to have to comprise that refractive index is at the multiple glass material of the glass material more than 1.57; And consist of the negative lens of the most close imaging side of above-mentioned projection optical system; Satisfy following conditional: wherein; The focal length of the negative lens of this most close imaging side is made as f; The distance of above-mentioned the 1st object to the 2 objects is made as L; The refractive index of the negative lens of the most close above-mentioned imaging side is made as n
|f/L|＜0.25、n≤1.55
Have one aspheric in the above-mentioned projection optical system at least.The imaging side lens here are the lens that are positioned at the high place of the energy density of light of exposure.In the glass material (optical glass), in general refractive index is low more in addition, and the transmissivity of short wavelength light is high more, and Abbe number is big more.
If adopt the 1st kind of projection optical system,, can carry out good revisal for each aberration because optical projection system comprises the glass material of refractive index in the high index of refraction more than 1.57.The most close in addition imaging side negative lens promptly is positioned at the negative lens of the high position of the optical energy density of exposure, satisfies | the conditional of f/L|＜0.25, n≤1.55.Promptly because the negative lens of the most close imaging side has suitable negative magnification, and refractive index is low again, be that the lens that are positioned at the high position of the optical energy density of exposure can guarantee high-transmission rate again, and can carry out good revisal the curvature of the image aberration (variation of image planes curved image difference when wavelength changes) that produces owing to color.
In addition, the feature of the 2nd kind of projection optical system provided by the invention is that the most close above-mentioned imaging side negative lens satisfies following conditional, and wherein vg is the Abbe number of the most close imaging side negative lens.
vg＞50
If adopt the 2nd kind of projection optical system, the most close imaging side negative lens formula vg＞50 that satisfy condition.Promptly because the glass material of the most close imaging side negative lens uses is the high glass material of Abbe number, so for because the curvature of the image aberration that color causes can carry out good revisal.
In addition, the invention provides the 3rd kind of projection optical system, when the Abbe number that it is characterized in that the most close above-mentioned imaging side negative lens is made as vg, this most close imaging side negative lens and then satisfy following conditional:
vg＞60
If adopt the 3rd kind of projection optical system, this most close imaging side negative lens formula vg＞60 that satisfy condition.Promptly because the most close imaging side negative lens has adopted the higher glass material of Abbe number, so can carry out better revisal for the curvature of the image aberration that causes owing to color.
In addition; The invention provides the 4th kind of projection optical system; It is the projection optical system of the figure of the 1st object being carried out projection at the 2nd object; It is characterized in that this projection optical system has comprises that refractive index is at the multiple glass material of the glass material more than 1.57; And consist of the negative lens of the most close imaging side of above-mentioned projection optical system; Satisfy following conditional: wherein; The focal length of the negative lens of this most close imaging side is made as f; The distance of above-mentioned the 1st object to the 2 objects is made as L; The Abbe number of the most close above-mentioned imaging side negative lens is made as vg
|f/L|＜0.25、vg＞60
If adopt above-mentioned the 4th kind of projection optical system, owing to having, this projection optical system comprises the glass material of refractive index, so can carry out good revisal for each aberration in the high index of refraction more than 1.57.In addition, the most close imaging side negative lens, the negative lens that promptly is positioned at the high position of the optical energy density of the exposure formula that satisfies condition | f/L|＜0.25,
vg＞60。Promptly the most close imaging side negative lens has suitable negative magnification, and because Abbe number height, be that the lens that are positioned at the high position of the optical energy density of exposure can guarantee high-transmission rate again, and produce the curvature of the image aberration for color and can carry out good revisal.
The invention provides the 5th kind of projection optical system in addition, it is characterized in that having one aspheric in the above-mentioned projection optical system at least.If adopt the 5th kind of projection optical system, owing to have one aspheric at least in the projection optical system, so the degree of freedom can improve the curvature of the image aberration that color is produced and carry out revisal the time.
In addition, the invention provides the 6th kind of projection optical system, it is characterized in that: from above-mentioned the 1st object side, the 1st lens combination that constitutes by the positive lens groups that comprises negative lens more than 1 piece, the 2nd lens combination that comprises the negative lens group formation of negative lens more than 2 pieces, the 3rd lens combination that comprises the positive lens groups formation of positive lens more than 3 pieces, comprise the 4th lens combination that the negative lens group of negative lens more than 2 pieces constitutes, comprise negative lens more than 2 pieces and comprise that the 5th lens combination that the positive lens groups of positive lens more than 3 pieces constitutes constitutes.
If adopt above-mentioned the 6th kind of projection optical system, relatively can suppress to distort, the curvature of the image of high order, the spherical aberration of high order or the generation of intelligent image difference, can also realize small-sized projection optical system.
In addition, the invention provides the 7th kind of projection optical system, it is characterized in that: above-mentioned the 1st lens combination, above-mentioned the 2nd lens combination, above-mentioned the 3rd lens combination, above-mentioned the 4th lens combination, the poly-degree of the light of above-mentioned the 5th lens combination satisfies following conditional, wherein, the focal length of above-mentioned the 1st lens combination is made as f1, the focal length of above-mentioned the 2nd lens combination is made as f2, the focal length of above-mentioned the 3rd lens combination is made as f3, the focal length of above-mentioned the 4th lens combination is made as f4, the focal length of above-mentioned the 5th lens combination is made as f5, the distance of above-mentioned the 1st object to the 2 objects is made as L
0.04＜f1/L＜0.4
0.015＜-f2/L0.15
0.02＜f3/L＜0.2
0.015＜-f4/L＜0.15
0.03＜f5/L＜0.3
Here, the conditional of 0.04＜f1/L＜0.4 has been stipulated the poly-degree of light of the 1st lens combination the best.Because the 1st lens combination satisfies the conditional of 0.04＜f1/L＜0.4, so can carry out revisal well for the distortion of projection optical system.In addition, 0.015＜-conditional of f2/L＜0.15 stipulated the poly-degree of light of the 2nd lens combination the best.Because the 2nd lens combination is full 0.015＜-conditional of f2/L＜0.15, so carry out revisal enough well for the high order image planes bending energy of projection optical system.0.02 the conditional of＜f3/L＜0.2 has been stipulated the poly-degree of the light of the 3rd lens combination the best.Because the 3rd lens combination satisfies the conditional of 0.02＜f3/L＜0.2, thus can not cause projection optical system maximization, can carry out revisal well to high order spherical aberration, distortion.
0.015 the conditional of＜-f4/L＜0.15 has been stipulated the poly-degree of the light of the 4th lens combination the best.Because the 4th lens combination satisfies 0.015＜-conditional of f4/L＜0.15, institute so that the high order spherical aberration can not appear in the projection optical system, intelligent image is poor, and high order image planes bending energy is carried out revisal enough well.And then 0.03＜f5/L＜0.3 conditional has been stipulated the poly-degree of the light of the 5th lens combination the best.Because the 5th lens combination satisfies the conditional of 0.03＜f5/L＜0.3, institute can realize the projection optical system of miniaturization so that can not produce the high order spherical aberration in the projection optical system.
In addition, the present invention also provides a kind of exposure device, it is characterized in that: have any projection optical system that claim 1～7 puts down in writing and decision as the mask of above-mentioned the 1st object and as the position of the substrate of above-mentioned the 2nd object carry the dress platform and to the lamp optical system that aforementioned mask is thrown light on, utilize the exposure that above-mentioned lamp optical system sends light, by above-mentioned projection optical system with the graphic projection of aforementioned mask on above-mentioned substrate.
If adopt above-mentioned exposure device, projection optical system is owing to have big perforate numerical aperture, and has the structure of the both sides heart far away, when obtaining high degree of resolution, can prevent to produce on mask, the substrate the crooked variation that causes the projection multiplying power to take place.In addition, owing to obtain roomy exposure area, can carry out single exposure for big graphics chip.And, for the lens that are positioned at the high position of energy density, because the refractive index and the high glass material of transmissivity that use, can suppress the deterioration of the imaging performance that the absorption owing to glass material produces, acquire high imaging performance.In the negative lens of imaging side in addition, because use is the low glass material of refractive index, curvature of the image aberration incidental in the projection optical system for enlarged regions, that caused by color can carry out revisal, obtains high imaging performance.
In addition, the present invention provides a kind of manufacture method of element in addition, it is characterized in that: have following 4 procedures: the 1st operation of coating photosensitive material on substrate, by the above-mentioned projection optical system in the exposure device of claim 8 record, on above-mentioned substrate the 2nd operation of the image of the figure of projection aforementioned mask, the 3rd operation that above-mentioned on-chip above-mentioned photosensitive material is carried out video picture, and the 4th operation that the photosensitive material after this video picture is formed the circuitous pattern of appointment as mask, on above-mentioned substrate.If adopt the manufacture method of the equipment of this claim 9 record, the circuitous pattern that on substrate, can use with the high degree of resolution forming device.
Description of drawings
Fig. 1 represents to have the accompanying drawing of structure of the projection aligner of the projection optical system that above-mentioned form of the present invention relates to;
Fig. 2 represents to relate to the accompanying drawing of lens arrangement of the projection optical system of the 1st embodiment of the present invention;
Fig. 3 represents to relate to the accompanying drawing of longitudinal aberration of the projection optical system of the 1st embodiment of the present invention;
Fig. 4 represents to relate to the accompanying drawing of lateral aberration of the projection optical system of the 1st embodiment of the present invention;
Fig. 5 represents to relate to the accompanying drawing of lens arrangement of the projection optical system of the 2nd embodiment of the present invention;
Fig. 6 represents to relate to the accompanying drawing of longitudinal aberration of the projection optical system of the 2nd embodiment of the present invention;
Fig. 7 represents to relate to the accompanying drawing of lateral aberration of the projection optical system of the 2nd embodiment of the present invention;
Fig. 8 represents to relate to the accompanying drawing of lens arrangement of the projection optical system of the 3rd embodiment of the present invention;
Fig. 9 represents to relate to the accompanying drawing of longitudinal aberration of the projection optical system of the 3rd embodiment of the present invention;
Figure 10 represents to relate to the accompanying drawing of lateral aberration of the projection optical system of the 3rd embodiment of the present invention;
Figure 11 represents to use the process flow diagram of manufacture method of the semiconductor equipment of the projection optical system that relates to each embodiment of the present invention;
IS-illumination optics device, R-first minification mask plate, RS-first minification mask plate carry dress platform, PL-projection optical system, AS-aperture diaphragm, W-wafer, the WA-wafer carries dress platform, G1-the 1st lens combination, G2-the 2nd lens combination, G3-the 3rd lens combination, G4-the 4th lens combination, G5-the 5th lens combination.
Embodiment
Below, with reference to accompanying drawing, describe for form of implementation of the present invention.Fig. 1 is the accompanying drawing of structure that expression has the projection aligner of projection optical system.
As shown in Figure 1, on the object plane of projection optical system PL, be provided with the projection negative of first minification mask plate R as the circuitous pattern that has formed appointment, on the image planes of projection optical system PL, be provided with applied photoresist wafer W as substrate.First minification mask plate R is maintained at the first minification mask plate and carries on the dress platform RS.Wafer W is maintained at wafer and carries on the dress platform WS.The top of first minification mask plate R is provided with and is used for lamp optical system IS that first minification mask plate R is evenly thrown light on.
Projection optical system PL has variable aperture diaphragm AS near pupil location, and in first minification mask plate R and wafer W side, forms core structure far away in fact.Lamp optical system IS carries out the astigmat of homogenization, the formations such as numerical aperture, variable field diaphragm (reticule blind) and condensing lens system of illuminator by the Illumination Distribution of the light that is used for exposing.The light of the exposure of being supplied with by illumination optics device IS throws light on for first minification mask plate R, and the picture in that the pupil location place of projection optical system PL forms light source among the illumination optics device IS promptly carries out so-called kohler's illumination.Therefore, by the image of the figure of the first minification mask plate R of kohler's illumination by projection optical system PL, reduced with certain projection multiplying power, on wafer W, be exposed (duplicating).(p9)
Fig. 2 is the sectional drawing of lens that expression relates to the projection optical system of the 1st embodiment of the present invention.This projection optical system PL is from the first minification mask plate R as the 1st object, by negative lens L101 and positive lens L102, L103, positive lens groups (the 1st lens combination) G1 that L104 constitutes, by negative lens L201, L202, L203, negative lens group (the 2nd lens combination) G2 that L204 constitutes, by positive lens L301, L302, L303, L304, L305, positive lens groups (the 3rd lens combination) G3 that L306 constitutes, by negative lens L401, L402, negative lens group (the 4th lens combination) G4 that L403 constitutes is by negative lens L505, L509, L511 and by positive lens L501, L502, L503, L504, L506, L507, L508, L510,512 these 5 groups formations of positive lens groups (the 3rd lens combination) G5 that constitute.Therefore, first minification mask plate (object plane) R side and become core structure far away as these both sides of wafer (image planes) W side of the 2nd object.
The structure that forms in the projection optics system PL is to have aspheric surface ASP1～ASP4 in addition.Promptly, the lens face of the wafer W side of the positive lens L104 of the 1st lens combination G1 forms as aspheric surface ASP1, the lens face of the wafer W side of the negative lens L203 of the 2nd lens combination G2 forms as aspheric surface ASP2, the 4th lens combination G4 the lens face of first minification mask plate R side of negative lens L402 form as aspheric surface ASP3, the lens face of the wafer W side of the positive lens L508 of the 5th lens combination G5 forms as aspheric surface ASP4.
This projection optical system PL has and comprises the multiple glass material of refractive index at the glass material more than 1.57.The negative lens L511 of the most close imaging side satisfies following conditional, wherein, the focal length of the negative lens L511 of this most close imaging side is made as f, the distance from first minification mask plate R to wafer W is made as L, the refractive index of the negative lens L511 of the most close imaging side is made as n:
|f/L|＜0.25......(1)
n≤1.55......(2)
The negative lens L511 that satisfies the most close imaging side of this conditional (1), (2) has suitable negative magnification.Therefore, in the glass material (optical glass), in general refractive index is low more, the transmissivity in short wavelength's the light is high more.In addition, near the lens of the most close imaging side, the energy density of the light of exposure is intelligent to uprise.And in glass material (optical glass), in general refractive index is low more, Abbe number is big more.Therefore, the negative lens L511 of the most close imaging side by the formula of satisfying condition (1), (2), be that the lens that are positioned at the high position of the optical energy density of exposure can guarantee high-transmission rate again, and produce the curvature of the image aberration for color and can carry out good revisal.Promptly can carry out good revisal for the distortion of the curvature of the image that causes by color or the high order aberration relevant with color.
And the negative lens L511 of the most close imaging side satisfies the conditional of vg＞50...... (3) when forming, and even more ideal is the conditional that satisfies vg＞60...... (4).Here, vg is the Abbe number of the negative lens L511 of the most close imaging side, and Abbe number is that following row mathematical expression defines:
vg＝(nd-1)/(nd-ng)
The refractive index of nd:d line (587.6nm)
The refractive index of ng:g line (435.8nm)
Formula (3) and then the formula that satisfies condition (4) because the negative lens L511 of the most close imaging side satisfies condition are so can carry out revisal to the curvature of the image aberration that is caused by color well.
As described above, this projection optical system PL is made of for these 5 groups the 1st lens combination G1～the 5th lens combination G5.The refractive index of each lens combination (the 1st lens combination G1～the 5th lens combination G5) satisfies following conditional when forming:
0.04＜f1/L＜0.4???????-(5)
0.015＜-f2/L＜0.15????-(6)
0.02＜f3/L＜0.2???????-(7)
0.015＜-f4/L＜0.15????-(8)
0.03＜f5/L＜0.3???????-(9)
Wherein f1 is the focal length of above-mentioned the 1st lens combination, f2 is the focal length of above-mentioned the 2nd lens combination, f3 is the focal length of above-mentioned the 3rd lens combination, f4 is the focal length of above-mentioned the 4th lens combination, f5 is the focal length of above-mentioned the 5th lens combination, and L represents the distance of first minification mask plate R (the 1st object) to wafer W (the 2nd object):
Above-mentioned conditional (5) has been stipulated the poly-degree of the optimal light of the 1st lens combination G1.The formula (5) because the 1st lens combination satisfies condition can be carried out revisal well for the distortion of projection optical system PL.That is, in a single day the value of f1/L has surpassed the upper limit of conditional (5), in the pincushion distortion that the 1st lens combination G1 produces, owing to not carrying out revisal for the barrel distortion of the 2nd lens combination G2, the 4th lens combination G4 and the 5th lens combination G5 generation fully, therefore unsatisfactory.On the other hand, in a single day the value of f1/L has surpassed the lower limit of conditional (5), can become the main cause of the pincushion distortion that produces high order, also undesirable.The aspheric surface that comprises among the 1st lens combination G1 (lens face of the wafer W side of positive lens L104) ASP1 has good revisal effect for the distortion of projection optical system PL.
In addition, above-mentioned conditional (6) has been stipulated the poly-degree of optimal light of the 2nd lens combination G2.The formula (6) because the 2nd lens combination satisfies condition can be carried out revisal well for the high order curvature of the image of projection optical system PL.That is, in a single day the value of-f2/L has surpassed the upper limit of conditional (6), because the revisal of high order curvature of the image becomes not exclusively, makes image planes be difficult to reach planarization, therefore unsatisfactory.On the other hand, in a single day the value of-f2/L has surpassed the lower limit of conditional (6), can cause very big barrel distortion takes place, and for the 1st lens combination G1, the 3rd lens combination G3, big hereto barrel distortion is carried out good revisal and is just become very difficult, unsatisfactory.The aspheric surface that comprises among the 2nd lens combination G2 (lens face of the wafer W side of positive lens L203) ASP2 has good revisal effect for the high order curvature of the image of projection optical system PL.
In addition, above-mentioned conditional (7) has been stipulated the poly-degree of optimal light of the 3rd lens combination G3.The formula (7) because the 3rd lens combination satisfies condition is so under the situation that can not cause projection optical system PL to maximize, can carry out revisal well for high order spherical aberration, the distortion of projection optical system PL.Promptly, in a single day the value of f3/L has surpassed the upper limit of conditional (7), the taking the photograph more than (telehotoratio) of system far away of taking the photograph that is formed by the 2nd lens combination G2 and the 3rd lens combination G3 becomes big, not only caused the maximization of projection optical system, and the amount that makes the 3rd lens combination G3 go up the pincushion distortion that produces reduces, to the 2nd lens combination G2, the 4th lens combination G4 and the 5th lens combination G5 go up the barrel distortion that takes place can not carry out good revisal, therefore unsatisfactory.On the other hand, in a single day the value of f3/L has surpassed the lower limit of conditional (7), can produce the high order spherical aberration, can not obtain good imaging performance on first minification mask plate R (the 2nd object), unsatisfactory.
In addition, above-mentioned conditional (8) has been stipulated the poly-degree of optimal light of the 4th lens combination G4.Because the 4th lens combination formula (8) that satisfies condition, so can not make projection optical system PL produce the high order spherical aberration, intelligent image is poor, and high order image planes bending energy is carried out revisal enough well.That is, in a single day the value of-f4/L has surpassed the upper limit of conditional (8), because the revisal of high order curvature of the image becomes not exclusively, can cause the deterioration of image planes flatness, therefore unsatisfactory.On the other hand, in a single day the value of-f4/L has surpassed the lower limit of conditional (8), becomes the main cause that produces high order spherical aberration, intelligent image difference, unsatisfactory.The aspheric surface that comprises among the 4th lens combination G4 (lens face of the first minification mask plate R side of positive lens L402) ASP3 has good revisal effect for projection optical system PL high order curvature of the image.
In addition, above-mentioned conditional (9) has been stipulated the poly-degree of optimal light of the 5th lens combination G5.The formula (9) because the 5th lens combination satisfies condition is not so can make projection optical system PL produce the high order spherical aberration, can realize small-sized projection optical system PL.That is, in a single day the value of f5/L has surpassed the upper limit of conditional (9), because a little less than the poly-degree of the light of the 5th lens combination G5 integral body became, the result has caused the maximization of projection optical system PL, and was therefore unsatisfactory.On the other hand, in a single day the value of f5/L has surpassed the lower limit of conditional (9), can produce the high order spherical aberration, cause the deterioration of the contrast of the picture on the first minification mask plate R, unsatisfactory.The aspheric surface that comprises among the 5th lens combination G5 (lens face of the wafer W side of positive lens L508) ASP4 is for the good inhibition effect that has of high order spherical aberration among the projection optical system PL.
Below, the data that will be referred to the projection optical system of the 1st embodiment are represented with table 1, table 2, table 3.In the table 1 D0 be on the optical axis from first minification mask plate R (the 1st object) to the 1st lens combination G1 the most close first minification mask plate R one side lens surface distance; WD be the most close wafer W one side from the 5th lens combination G5 lens surface to wafer W (the 2nd object), on optical axis the distance (operating distance); β is the projection multiplying power of projection optical system, N.A. be the numerical aperture of the wafer W side of projection optical system, φ exp is the diameter of circular exposure area (view field) on the wafer W face of projection optical system, L be between the picture of object on the optical axis (between first minification mask plate R and the wafer W), on optical axis distance.
Table 1
| ????D0 | ????84.983 |
| ????WD | ????12.000 |
| ????β | ????0.25 |
| ????N.A. | ????0.62 |
| ????φexp | ????42.2 |
| ????L | ????1250.0 |
In addition, what each mark in the table 2 was represented respectively is: No. is the order from first minification mask plate R (the 1st object) to lens surface, r is the radius-of-curvature of corresponding lens face, d is the distance from the respective lens face to next lens face on the optical axis, n is that (refractive index of glass material among the λ=365.015nm), vg is an Abbe number to the i line.Table 2
| ?No. | ?r | ?d | ?n | ?vg |
| ?1 | ?357.877 | ?18.500 | ?1.612904 | ?33.1 |
| ?2 | ?213.020 | ?3.180 | (air) 1 | |
| ?3 | ?230.543 | ?43.146 | ?1.488040 | ?71.2 |
| ?4 | ?-603.699 | ?1.000 | (air) 1 | |
| ?5 | ?368.658 | ?31.343 | ?1.615457 | ?48.6 |
| ?6 | ?-880.911 | ?1.000 | (air) 1 | |
| ?7 | ?263.755 | ?30.100 | ?1.612904 | ?33.1 |
| ?8 | ?1330.000 | ?1.000 | (air) 1 | |
| ?9 | ?392.296 | ?18.500 | ?1.615457 | ?48.6 |
| ?10 | ?119.730 | ?21.871 | (air) 1 | |
| ?11 | ?609.994 | ?15.000 | ?1.488040 | ?71.2 |
| ?12 | ?133.416 | ?36.671 | (air) 1 | |
| ?13 | ?-379.732 | ?15.000 | ?1.488040 | ?71.2 |
| ?14 | ?163.050 | ?45.384 | (air) 1 | |
| ?15 | ?-107.204 | ?20.746 | ?1.612904 | ?33.1 |
| ?16 | ?-2557.185 | ?1.000 | (air) 1 | |
| ?17 | ?-2941.702 | ?49.223 | ?1.488040 | ?71.2 |
| ?18 | ?-165.913 | ?1.000 | (air) 1 | |
| ?19 | ?-522.218 | ?41.255 | ?1.615457 | ?48.6 |
| ?20 | ?-201.377 | ?1.000 | (air) 1 | |
| ?21 | ?1914.964 | ?32.332 | ?1.615457 | ?48.6 |
| ?22 | ?-590.355 | ?1.000 | (air) 1 | |
| ?23 | ?334.769 | ?34.977 | ?1.615457 | ?48.6 |
| ?24 | ?1626.081 | ?1.000 | (air) 1 | |
| ?25 | ?245.009 | ?42.130 | ?1.615457 | ?48.6 |
| ?26 | ?1496.446 | ?1.000 | (air) 1 | |
| ?27 | ?303.409 | ?33.577 | ?1.488040 | ?71.2 |
| ?28 | ?∞ | ?1.000 | (air) 1 | |
| ?29 | ?1176.008 | ?19.597 | ?1.615457 | ?48.6 |
| ?30 | ?144.707 | ?35.780 | (air) 1 | |
| ?31 | ?-429.000 | ?15.000 | ?1.612904 | ?33.1 |
| ?32 | ?205.121 | ?41.267 | (air) 1 | |
| ?33 | ?-127.263 | ?15.500 | ?1.612904 | ?33.1 |
| ?34 | ?∞ | ?24.497 | (air) 1 | |
| ?35 | ?-302.411 | ?35.725 | ?1.488040 | ?71.2 |
| ?36 | ?-198.179 | ?10.000 | (air) 1 | |
| ?37 | ?-1536.242 | ?40.682 | ?1.488040 | ?71.2 |
| ??38 | ??-212.500 | ??1.000 | (air) 1 | |
| ??39 | ???956.359 | ??37.834 | ??1.488040 | ??71.2 |
| ??40 | ??-454.905 | ??1.000 | (air) 1 | |
| ??41 | ???908.277 | ??50.368 | ??1.488040 | ??71.2 |
| ??42 | ??-327.594 | ??3.760 | (air) 1 | |
| ??43 | ??-298.405 | ??21.500 | ??1.615457 | ??48.6 |
| ??44 | ??-586.399 | ??1.000 | (air) 1 | |
| ??45 | ???613.613 | ??29.534 | ??1.488040 | ??71.2 |
| ??46 | ??-1803.717 | ??1.000 | (air) 1 | |
| ??47 | ???211.409 | ??34.157 | ??1.488040 | ??71.2 |
| ??48 | ???486.530 | ??1.000 | (air) 1 | |
| ??49 | ???164.691 | ??52.400 | ??1.488040 | ??71.2 |
| ??50 | ???925.765 | ??2.302 | (air) 1 | |
| ??51 | ???1924.184 | ??15.500 | ??1.612904 | ??33.1 |
| ??52 | ???100.996 | ??6.187 | (air) 1 | |
| ??53 | ???113.691 | ??42.092 | ??1.474584 | ??55.9 |
| ??54 | ???∞ | ??1.000 | (air) 1 | |
| ??55 | ???551.382 | ??38.640 | ??1.488040 | ??71.2 |
| ??56 | ???77.861 | ??1.000 | (air) 1 | |
| ??57 | ???66.506 | ??40.761 | ??1.474584 | ??55.9 |
| ??58 | ???∞ |
What represent in the table 3 in addition, is the coefficient of expression aspherical shape.Here asphericity coefficient is represented mathematical expression 1 with the mathematical expression 1 shown in following
Z is the sag amount, and h is the distance from optical axis, and r is the radius-of-curvature of surface vertices, and k is circular cone coefficient (being sphere during k=0).
Table 3
| The asphericity coefficient of No8 face | |
| ????k | ????0 |
| ????A | ????1.27929E-08 |
| ????B | ????-4.53146E-13 |
| ????C | ????1.07483E-17 |
| ????D | ????-1.24207E-21 |
| ????E | ????0 |
| The asphericity coefficient of No14 face | |
| ????k | ????0 |
| ????A | ????-6.91630E-08 |
| ????B | ????-1.79116E-12 |
| ????C | ????-8.08375E-18 |
| ????D | ????-3.86358E-22 |
| ????E | ????0 |
| The asphericity coefficient of No31 face | |
| ????k | ????0 |
| ????A | ????-2.52517E-08 |
| ????B | ?????1.01980E-12 |
| ????C | ?????1.07363E-17 |
| ????D | ????-7.79521E-22 |
| ????E | ?????5.13524E-27 |
| The asphericity coefficient of No50 face | |
| ????k | ?????0 |
| ????A | ????-2.45831E-08 |
| ????B | ?????1.02107E-12 |
| ????C | ????-1.51768E-17 |
| ????D | ????-6.84723E-22 |
| ????E | ?????2.96652E-26 |
In addition, in the table 4, represent and above-mentioned conditional (1)～(9) the corresponding value (condition respective value) that relates to the 1st embodiment
Table 4
| ????f | ????-190.88 |
| ????L | ?????1250 |
| ????|f/L| | ?????0.153 |
| ????vg | ?????71.2 |
| ????f1 | ?????176.63 |
| ????|f1/L| | ?????0.141 |
| ????f2 | ????-44.30 |
| ????|f2/L| | ?????0.035 |
| ????f3 | ?????107.24 |
| ????|f3/L| | ????0.086 |
| ????f4 | ???-61.59 |
| ????|f4/L| | ????0.049 |
| ????f5 | ????144.05 |
| ????|f5/L| | ????0.115 |
The longitudinal aberration of the projection optical system that relates to the 1st embodiment that Fig. 3 represents and distortion (crooked aberration), what Fig. 4 represented is its lateral aberration (intelligent image is poor) on meridian direction (tangential direction) and segment direction (sagitta of arc direction).In each aberration diagram, N.A. be the numerical aperture of the wafer W of projection optical system PL, what field height represented is the image height of wafer W side, among the astigmatism figure, what dotted line was represented is meridianal image surface (tangent line image planes), and what solid line was represented is segment image planes (sagittal image surfaces).In the spherical aberration, solid line is represented is aberration as standard wavelength's i line (365.015nm), what dotted line was represented is the aberration of overgauge wavelength+3nm (368.015nm) line, dot-and-dash line is represented be than the standard wavelength little-aberration of the line of 3nm (362.015nm).Equally represent aberration for lateral aberration (intelligent image is poor) as standard wavelength's i line (365.015nm) with solid line, dot than standard wave and grow up+aberration of the line of 3nm (368.015nm), with dot-and-dash line represent than the standard wavelength little-aberration of the line of 3nm (362.015nm).
By relating to the projection optical system of the 1st embodiment, though what just be appreciated that employing is the structure of the both sides heart far away, in roomy exposure area, not only particularly can be good at revisal, for comprising that the aberration that is caused by color also can balancedly carry out revisal for distortion.
Below, describe for the structure of the projection optical system that relates to the 2nd embodiment.Fig. 5 is the sectional drawing of lens that expression relates to the projection optical system of the 2nd embodiment of the present invention.This projection optical system PL is from the first minification mask plate R as the 1st object, by negative lens L101 and positive lens L102, L103, positive lens groups (the 1st lens combination) G1 that L104 constitutes, by negative lens L201, L202, L203, negative lens group (the 2nd lens combination) G2 that L204 constitutes, by positive lens L301, L302, L303, L304, L305, positive lens groups (the 3rd lens combination) G3 that L306 constitutes, by negative lens L401, L402, negative lens group (the 4th lens combination) G4 that L403 constitutes is by negative lens L504, L508, L510 and by positive lens L501, L502, L503, L505, L506, L507, L509, these 5 groups formations of positive lens groups (the 3rd lens combination) G5 that L511 constitutes.
In addition, formation has the structure of aspheric surface ASP1～ASP4 in the projection optics system PL.Promptly, the lens face of the wafer W side of the positive lens L104 of the 1st lens combination G1 forms as aspheric surface ASP1, the lens face of the wafer W side of the negative lens L203 of the 2nd lens combination G2 forms as aspheric surface ASP2, the 4th lens combination G4 the lens face of first minification mask plate R side of negative lens L402 form as aspheric surface ASP3, the lens face of the wafer W side of the positive lens L508 of the 5th lens combination G5 forms as aspheric surface ASP4.
This projection optical system PL has and comprises the multiple glass material of refractive index at the glass material more than 1.57.The negative lens L510 of the most close imaging side satisfies above-mentioned conditional (1), (2).Therefore, the negative lens L510 of the most close imaging side by the formula of satisfying condition (1), (2), it is the lens of energy density eminence that are positioned at the light of exposure, can guarantee high-transmission rate again, and can carry out revisal to chromatic aberation well.
And the negative lens L510 of the most close imaging side satisfies above-mentioned conditional (3), comparatively it is desirable to the formula of satisfying condition (4) and forms.Satisfy above-mentioned conditional (3), the negative lens L510 of the most close imaging side of the comparatively desirable formula that satisfies condition (4) can carry out revisal well for the curvature of the image aberration that causes owing to color.
As described above, this projection optical system PL is made of for these 5 groups the 1st lens combination G1～the 5th lens combination G5, and the poly-degree of light that constitutes its each lens combination (the 1st lens combination G1～the 5th lens combination G5) all satisfies above-mentioned conditional (5)～(9).
Above-mentioned conditional (5) has been stipulated the poly-degree of the optimal light of the 1st lens combination G1.The formula (5) because the 1st lens combination satisfies condition can be carried out revisal well for the distortion of projection optical system PL.The aspheric surface that comprises among the 1st lens combination G1 (lens face of the wafer W side of positive lens L104) ASP1 has good revisal effect for the distortion of projection optical system PL.In addition, above-mentioned conditional (6) has been stipulated the poly-degree of optimal light of the 2nd lens combination G2.The formula (6) because the 2nd lens combination G2 satisfies condition can be carried out revisal well for the high order curvature of the image of projection optical system PL.The aspheric surface that comprises among the 2nd lens combination G2 (lens face of the wafer W side of negative lens L203) ASP2 has good revisal effect for the high order curvature of the image of projection optical system PL.In addition, above-mentioned conditional (7) has been stipulated the poly-degree of optimal light of the 3rd lens combination G3.The formula (7) because the 3rd lens combination G3 satisfies condition is so under the situation that can not cause projection optical system PL to maximize, can carry out revisal well for high order spherical aberration, the distortion of projection optical system PL.
In addition, above-mentioned conditional (8) has been stipulated the poly-degree of optimal light of the 4th lens combination G4.Because the 4th lens combination G4 formula (8) that satisfies condition, so can not make projection optical system PL produce the high order spherical aberration, intelligent image is poor, and high order image planes bending energy is carried out revisal enough well.The aspheric surface that comprises among the 4th lens combination G4 (lens face of the first minification mask plate R side of negative lens L402) ASP3 has good revisal effect for projection optical system PL high order curvature of the image.
And above-mentioned conditional (9) has been stipulated the poly-degree of the optimal light of the 5th lens combination G5.The formula (9) because the 5th lens combination G5 satisfies condition is not so can make projection optical system PL produce the high order spherical aberration, just can realize small-sized projection optical system PL.The aspheric surface that comprises among the 5th lens combination G5 (lens face of the wafer W side of positive lens L508) ASP4 is for the good inhibition effect that has of high order spherical aberration among the projection optical system PL.
Below, the data that will be referred to the projection optical system of the 2nd embodiment are represented with table 5, table 6, table 7.In the table 5 D0 be on the optical axis from first minification mask plate R (the 1st object) to the 1st lens combination G1 the most close first minification mask plate R one side lens surface distance; WD be on the optical axis from the 5th lens combination G5 the lens surface of the most close wafer W one side to the distance (operating distance) of wafer W (the 2nd object); β is the projection multiplying power of projection optical system, N.A. be the numerical aperture of the wafer W side of projection optical system, φ exp is the diameter of circular exposure area (view field) on the wafer W face of projection optical system, and L is the distance of (between first minification mask plate R and the wafer W) between the picture of object on the optical axis.
Table 5
| ????D0 | ????81.751 |
| ????WD | ????13.400 |
| ????β | ????0.25 |
| ????N.A. | ????0.62 |
| ????φexp | ????42.2 |
| ????L | ????1250.0 |
In addition, what each mark in the table 6 was represented respectively is: No is that first minification mask plate R (the 1st an object) side plays the order of lens surface, r is the radius-of-curvature of corresponding lens face, d is the distance from the respective lens face to next lens face on the optical axis, n is that (refractive index of glass material among the λ=365.015nm), vg is an Abbe number to the i line.Table 6
| No. | ?r | ?d | ?n | ?vg |
| ?1 | ?335.964 | ?21.205 | ?1.612904 | ?33.1 |
| ?2 | ?213.975 | ?4.650 | (air) 1 | |
| ?3 | ?248.066 | ?35.553 | ?1.488040 | ?71.2 |
| ?4 | ?-1619.744 | ?1.000 | (air) 1 | |
| ?5 | ?554.918 | ?31.585 | ?1.615457 | ?48.6 |
| ?6 | ?-474.240 | ?1.000 | (air) 1 | |
| ?7 | ?203.552 | ?29.380 | ?1.612904 | ?33.1 |
| ?8 | ?829.921 | ?1.000 | (air) 1 | |
| ?9 | ?392.191 | ?26.135 | ?1.615457 | ?48.6 |
| ?10 | ?118.078 | ?22.009 | (air) 1 | |
| ?11 | ?903.802 | ?15.000 | ?1.488040 | ?71.2 |
| ?12 | ?136.923 | ?24.806 | (air) 1 | |
| ?13 | ?-351.266 | ?15.000 | ?1.488040 | ?71.2 |
| ?14 | ?185.799 | ?42.136 | (air) 1 | |
| ?15 | ?-101.445 | ?15.000 | ?1.612904 | ?33.1 |
| ?16 | ?1533.831 | ?1.000 | (air) 1 | |
| ?17 | ?1847.934 | ?51.605 | ?1.488040 | ?71.2 |
| ?18 | ?-166.043 | ?1.000 | (air) 1 | |
| ?19 | ?-443.835 | ?40.200 | ?1.615457 | ?48.6 |
| ?20 | ?-192.225 | ?1.000 | (air) 1 | |
| ?21 | ?2126.248 | ?37.407 | ?1.615457 | ?48.6 |
| ?22 | ?-444.093 | ?1.000 | (air) 1 | |
| ?23 | ?380.000 | ?33.651 | ?1.615457 | ?48.6 |
| ?24 | ?2690.657 | ?1.000 | (air) 1 | |
| ?25 | ?244.797 | ?37.959 | ?1.615457 | ?48.6 |
| ?26 | ?791.087 | ?1.000 | (air) 1 | |
| ?27 | ?324.991 | ?36.032 | ?1.488040 | ?71.2 |
| ?28 | ?-2616.9632 | ?1.000 | (air) 1 | |
| ?29 | ?659.689 | ?24.282 | ?1.615457 | ?48.6 |
| ?30 | ?136.864 | ?37.474 | (air) 1 | |
| ?31 | ?-348.340 | ?15.000 | ?1.612904 | ?33.1 |
| ?32 | ?284.613 | ?36.010 | (air) 1 | |
| ?33 | ?-135.039 | ?30.000 | ?1.612904 | ?33.1 |
| ?34 | ?∞ | ?43.670 | (air) 1 | |
| ?35 | ?-512.340 | ?34.871 | ?1.488040 | ?71.2 |
| ?36 | ?-191.230 | ?10.000 | (air) 1 | |
| ?37 | ?8846.029 | ?42.291 | ?1.488040 | ?71.2 |
| ??38 | ??-259.293 | ??1.000 | (air) 1 | |
| ??39 | ??408.339 | ??58.619 | ??1.488040 | ??71.2 |
| ??40 | ??-322.549 | ??3.078 | (air) 1 | |
| ??41 | ??-301.443 | ??22.100 | ??1.615457 | ??48.6 |
| ??42 | ??-911.295 | ??1.000 | (air) 1 | |
| ??43 | ??347.139 | ??35.635 | ??1.488040 | ??71.2 |
| ??44 | ??12619.174 | ??1.000 | (air) 1 | |
| ??45 | ??230.001 | ??35.473 | ??1.488040 | ??71.2 |
| ??46 | ??651.090 | ??1.000 | (air) 1 | |
| ??47 | ??155.665 | ??43.740 | ??1.488040 | ??71.2 |
| ??48 | ??736.429 | ??3.734 | (air) 1 | |
| ??49 | ??1219.698 | ??17.000 | ??1.612904 | ??33.1 |
| ??50 | ??101.018 | ??7.459 | (air) 1 | |
| ??51 | ??119.027 | ??42.505 | ??1.474584 | ??55.9 |
| ??52 | ??∞ | ??1.000 | (air) 1 | |
| ??53 | ??818.077 | ??38.000 | ??1.488040 | ??71.2 |
| ??54 | ??80.92327 | ??1.000 | (air) 1 | |
| ??55 | ??66.885 | ??38.594 | ??1.474584 | ??55.9 |
| ??56 | ???∞ |
What represent in the table 7 in addition, is the coefficient of expression aspherical shape.The mathematical expression of definition aspherical shape is identical with the mathematical expression of the definition aspherical shape that relates to the foregoing description 1.
Table 7
| The asphericity coefficient of No8 face | |
| ????k | ????0 |
| ????A | ????1.37724E-09 |
| ????B | ????4.74517E-14 |
| ????C | ????-1.65812E-17 |
| ????D | ????-7.51967E-22 |
| ????E | ????0 |
| The asphericity coefficient of No14 face | |
| ????k | ????0 |
| ????A | ????-3.87313E-08 |
| ????B | ????-3.42552E-12 |
| ????C | ????4.66140E-17 |
| ????D | ????4.55243E-21 |
| ????E | ????0 |
| The asphericity coefficient of No31 face | |
| ????k | ????0 |
| ????A | ????-2.43974E-08 |
| ????B | ????3.30758E-13 |
| ????C | ????7.68269E-18 |
| ????D | ????8.50336E-22 |
| ????E | ????-2.72295E-26 |
| The asphericity coefficient of No50 face | |
| ????k | ????0 |
| ????A | ????-4.65669E-09 |
| ????B | ????3.20001E-14 |
| ????C | ????6.54958E-19 |
| ????D | ????-3.46676E-23 |
| ????E | ????-6.04525E-28 |
In addition, in the table 8, represent and above-mentioned conditional (1)～(9) the corresponding value (condition respective value) that relates to the 2nd embodiment.
Table 8
The longitudinal aberration of the projection optical system that relates to the 2nd embodiment that Fig. 6 represents and distortion (crooked aberration), what Fig. 7 represented is its lateral aberration (intelligent image is poor) on meridian direction (tangential direction) and segment direction (sagitta of arc direction).In each aberration diagram, N.A. be the numerical aperture of the wafer W of projection optical system PL, what field height represented is the image height of wafer W side, among the astigmatism figure, what dotted line was represented is meridianal image surface (tangent line image planes), and what solid line was represented is segment image planes (sagittal image surfaces).In the spherical aberration, solid line is represented is aberration as standard wavelength's i line (365.015nm), what dotted line was represented is the aberration of overgauge wavelength+3nm (368.015nm) line, dot-and-dash line is represented be than the standard wavelength little-aberration of the line of 3nm (362.015nm).Equally represent aberration for lateral aberration (intelligent image is poor) as standard wavelength's i line (365.015nm) with solid line, dot than standard wave and grow up+aberration of the line of 3nm (368.015nm), with dot-and-dash line represent than the standard wavelength little-aberration of the line of 3nm (362.015nm).
| ????f | ????-187.18 |
| ????L | ????1250 |
| ????|f/L| | ????0.150 |
| ????vg | ????71.2 |
| ????f1 | ????177.42 |
| ????|f1/L| | ????0.142 |
| ????f2 | ????-41.66. |
| ????|f2/L| | ????0.033 |
| ????f3 | ????106.69 |
| ????|f3/L| | ????0.085 |
| ????f4 | ????-68.55 |
| ????|f4/L| | ????0.055 |
| ????f5 | ????148.22 |
| ????|f5/L| | ????0.119 |
By relating to the projection optical system of the 2nd embodiment, though what be appreciated that employing is the structure of the both sides heart far away, in roomy whole exposure area, not only can be good at revisal especially for distortion, and for comprising that the aberration that color causes also can keep in balance, carry out well revisal.
Below, the structure of the projection optical system that relates to for the 3rd embodiment describes.Fig. 8 is the sectional drawing of lens that expression relates to the projection optical system of the 3rd embodiment of the present invention.This projection optical system PL is from the first minification mask plate R as the 1st object, by negative lens L101 and positive lens L102, L103, positive lens groups (the 1st lens combination) G1 that L104 constitutes, by negative lens L201, L202, L203, negative lens group (the 2nd lens combination) G2 that L204 constitutes, by positive lens L301, L302, L303, L304, positive lens groups (the 3rd lens combination) G3 that L305 constitutes, by negative lens L401, L402, negative lens group (the 4th lens combination) G4 that L403 constitutes is by negative lens L504, L508, L510 and by positive lens L501, L502, L503, L505, L506, L507, L509, these 5 groups formations of positive lens groups (the 3rd lens combination) G5 that L511 constitutes.Therefore, form core structure far away in first minification mask plate (object plane) R side and as wafer (image planes) the W side both sides of the 2nd object.
Form structure in the projection optics system PL in addition with aspheric surface ASP1～ASP5.Promptly, the lens face of the wafer W side of the positive lens L104 of the 1st lens combination G1 forms as aspheric surface ASP1, the lens face of the wafer W side of the negative lens L203 of the 2nd lens combination G2 forms as aspheric surface ASP2, the 3rd lens combination G3 the lens face of first minification mask plate R side of negative lens L305 form as aspheric surface ASP3, the 4th lens combination G4 the lens face of first minification mask plate R side of negative lens L402 form as aspheric surface ASP4, the lens face of the wafer W side of the positive lens L507 of the 5th lens combination G5 forms as aspheric surface ASP5.
This projection optical system PL has and comprises the multiple glass material of refractive index at the glass material more than 1.57.The negative lens L510 of the most close imaging side satisfies above-mentioned conditional (1), (2), therefore, the negative lens L510 of the most close imaging side by the formula of satisfying condition (1), (2), just can accomplish that it is that the lens that are positioned at the high position of the optical energy density of exposure can guarantee high-transmission rate again, and produce the curvature of the image aberration for color and can carry out good revisal
And the negative lens L510 of the most close imaging side is satisfying above-mentioned conditional (3), comparatively it is desirable to form under the condition of the formula of satisfying condition (4).Satisfy above-mentioned conditional (3), the negative lens L510 of the most close imaging side of the comparatively desirable formula that satisfies condition (4) can carry out revisal well for the curvature of the image aberration that causes owing to color.
As described above, this projection optical system PL is made of for these 5 groups the 1st lens combination G1～the 5th lens combination G5, and the poly-degree of light that constitutes its each lens combination (the 1st lens combination G1～the 5th lens combination G5) all satisfies above-mentioned conditional (5)～(9).
Above-mentioned conditional (5) has been stipulated the poly-degree of the optimal light of the 1st lens combination G1.The formula (5) because the 1st lens combination satisfies condition can be carried out revisal well for the distortion of projection optical system PL.The aspheric surface that comprises among the 1st lens combination G1 (lens face of the wafer W side of positive lens L104) ASP1 has good revisal effect for the distortion of projection optical system PL.In addition, above-mentioned conditional (6) has been stipulated the poly-degree of optimal light of the 2nd lens combination G2.The formula (6) because the 2nd lens combination satisfies condition can be carried out revisal well for the high order curvature of the image of projection optical system PL.The aspheric surface that comprises among the 2nd lens combination G2 (lens face of the wafer W side of negative lens L203) ASP2 has good revisal effect for the high order curvature of the image of projection optical system PL.
In addition, above-mentioned conditional (7) has been stipulated the poly-degree of optimal light of the 3rd lens combination G3.The formula (7) because the 3rd lens combination satisfies condition is so under the situation that can not cause projection optical system PL to maximize, can carry out revisal well for high order spherical aberration, the distortion of projection optical system PL.The aspheric surface that comprises among the 3rd lens combination G3 (lens face of the wafer W side of positive lens L305) ASP3 has good revisal effect for high order spherical aberration, the distortion of projection optical system PL.
In addition, above-mentioned conditional (8) has been stipulated the poly-degree of optimal light of the 4th lens combination G4.Because the 4th lens combination formula (8) that satisfies condition, so can not make projection optical system PL produce the high order spherical aberration, intelligent image is poor, and high order image planes bending energy is carried out revisal enough well.The aspheric surface that comprises among the 4th lens combination G4 (lens face of the first minification mask plate R of negative lens L402) ASP4 has good revisal effect for projection optical system PL high order curvature of the image.
And above-mentioned conditional (9) has been stipulated the poly-degree of the optimal light of the 5th lens combination G5.The formula (9) because the 5th lens combination satisfies condition is not so can make projection optical system PL produce the high order spherical aberration, can realize small-sized projection optical system PL.The aspheric surface that comprises among the 5th lens combination G5 (lens face of the wafer W side of positive lens L507) ASP5 is for the good inhibition effect that has of high order spherical aberration among the projection optical system PL.
The data that will be referred to the projection optical system of the 3rd embodiment are represented with table 9, table 10, table 11.In the table 9 D0 be on the optical axis from first minification mask plate R (the 1st object) to the 1st lens combination G1 the most close first minification mask plate R one side lens surface distance; WD be on the optical axis from the 5th lens combination G5 the lens surface of the most close wafer W one side to the distance (operating distance) of wafer W (the 2nd object); β is the projection multiplying power of projection optical system, N.A. be the numerical aperture of the wafer W side of projection optical system, φ exp is the diameter of circular exposure area (view field) on the wafer W face of projection optical system, and L is the distance of (between first minification mask plate R and the wafer W) between the picture of object on the optical axis.
Table 9
| ????D0 | ????90.621 |
| ????WD | ????13.400 |
| ????β | ????0.25 |
| ????N.A. | ????0.62 |
| ????φexp | ????42.2 |
| ????L | ????1250.0 |
In addition, what each mark in the table 10 was represented respectively is: No. is the order from first minification mask plate R (the 1st object) to lens surface, r is the radius-of-curvature of corresponding lens face, d is the distance from corresponding lens face to next lens face on the optical axis, n is that (refractive index of glass material among the λ=365.015nm), vg is an Abbe number to the i line.
Table 10
| ?No. | ?r | ?d | ?n | ?vg |
| ?1 | ?338.289 | ?20.330 | ?1.612904 | ?33.1 |
| ?2 | ?216.669 | ?4.910 | (air) 1 | |
| ?3 | ?253.403 | ?36.996 | ?1.48804 | ?71.2 |
| ?4 | ?-1168.441 | ?1.000 | (air) 1 | |
| ?5 | ?604.535 | ?31.489 | ?1.615457 | ?48.6 |
| ?6 | ?-467.500 | ?1.000 | (air) 1 | |
| ?7 | ?196.358 | ?30.488 | ?1.612904 | ?33.1 |
| ?8 | ?834.553 | ?1.000 | (air) 1 | |
| ?9 | ?386.236 | ?21.437 | ?1.615457 | ?48.6 |
| ?10 | ?120.043 | ?22.604 | (air) 1 | |
| ?11 | ?959.319 | ?15.000 | ?1.48804 | ?71.2 |
| ?12 | ?132.178 | ?26.624 | (air) 1 | |
| ?13 | ?-325.234 | ?15.000 | ?1.488040 | ?71.2 |
| ?14 | ?188.084 | ?41.473 | (air) 1 | |
| ?15 | ?-105.336 | ?15.000 | ?1.612904 | ?33.1 |
| ?16 | ?1300.290 | ?1.000 | (air) 1 | |
| ?17 | ?1461.361 | ?51.673 | ?1.48804 | ?71.2 |
| ?18 | ?-168.547 | ?1.000 | (air) 1 | |
| ?19 | ?-396.052 | ?34.939 | ?1.615457 | ?48.6 |
| ?20 | ?-201.886 | ?1.000 | (air) 1 | |
| ?21 | ?1806.955 | ?42.379 | ?1.615457 | ?48.6 |
| ?22 | ?-373.899 | ?1.000 | (air) 1 | |
| ?23 | ?282.486 | ?48.957 | ?1.615457 | ?48.6 |
| ?24 | ?-3299.328 | ?1.000 | (air) 1 | |
| ?25 | ?183.916 | ?47.052 | ?1.48804 | ?71.2 |
| ?26 | ?912.025 | ?1.000 | (air) 1 | |
| ?27 | ?493.693 | ?29.201 | ?1.615457 | ?48.6 |
| ?28 | ?122.344 | ?44.515 | (air) 1 | |
| ?29 | ?-294.101 | ?15.000 | ?1.612904 | ?33.1 |
| ?30 | ?351.848 | ?30.714 | (air) 1 | |
| ?31 | ?-146.417 | ?29.120 | ?1.612904 | ?33.1 |
| ?32 | ?14050.000 | ?41.566 | (air) 1 | |
| ?33 | ?-516.573 | ?36.329 | ?1.48804 | ?71.2 |
| ?34 | ?-198.613 | ?10.000 | (air) 1 | |
| ?35 | ?10651.072 | ?43.432 | ?1.48804 | ?71.2 |
| ??36 | ??-249.279 | ??1.000 | (air) 1 | |
| ??37 | ??444.385 | ??57.724 | ??1.48804 | ??71.2 |
| ??38 | ??-314.077 | ??3.061 | (air) 1 | |
| ??39 | ??-294.410 | ??22.100 | ??1.615457 | ??48.6 |
| ??40 | ??-700.091 | ??1.000 | (air) 1 | |
| ??41 | ??301.935 | ??36.548 | ??1.48804 | ??71.2 |
| ??42 | ??2131.526 | ??1.000 | (air) 1 | |
| ??43 | ??223.029 | ??35.107 | ??1.48804 | ??71.2 |
| ??44 | ??562.142 | ??1.000 | (air) 1 | |
| ??45 | ??163.029 | ??43.278 | ??1.48804 | ??71.2 |
| ??46 | ??880.469 | ??3.624 | (air) 1 | |
| ??47 | ??1616.991 | ??17.000 | ??1.612904 | ??33.1 |
| ??48 | ??100.636 | ??6.851 | (air) 1 | |
| ??49 | ??116.211 | ??41.644 | ??1.474584 | ??55.9 |
| ??50 | ??∞ | ??1.000 | (air) 1 | |
| ??51 | ??810.875 | ??38.000 | ??1.48804 | ??71.2 |
| ??52 | ??82.131 | ??1.000 | (air) 1 | |
| ??53 | ??67.868 | ??39.815 | ??1.474584 | ??55.9 |
| ??54 | ??∞ | (air) 1 |
What represent in the table 11 in addition, is the coefficient of expression aspherical shape.The mathematical expression of definition aspherical shape is identical with the mathematical expression of the definition aspherical shape that relates to the foregoing description 1.
Table 11
| The asphericity coefficient of No8 face | |
| ????k | ?????0 |
| ????A | ?????3.67554E-09 |
| ????B | ????-3.11182E-14 |
| ????C | ????-1.58208E-17 |
| ????D | ????-8.43055E-22 |
| ????E | ?????0 |
| The asphericity coefficient of No14 face | |
| ????k | ?????0 |
| ????A | ????-4.38224E-08 |
| ????B | ????-3.35478E-12 |
| ????C | ????4.85230E-17 |
| ????D | ????7.17177E-21 |
| ????E | ????0 |
| The asphericity coefficient of No26 face | |
| ????k | ?????0 |
| ????A | ????-6.55332E-08 |
| ????B | ?????1.61650E-13 |
| ????C | ????-1.86302.E-17 |
| ????D | ????-1.42965E-22 |
| ????E | ?????0 |
| The asphericity coefficient of No29 face | |
| ????k | ?????0 |
| ????A | ????-3.75188E-08 |
| ????B | ?????3.46986E-13 |
| ????C | ?????1.15899E-17 |
| ????D | ?????1.26019E-22 |
| ????E | ????-1.24869E-25 |
| The asphericity coefficient of No44 face | |
| ????k | ?????0 |
| ????A | ????-5.94584E-09 |
| ????B | ?????4.49868E-14 |
| ????C | ?????5.91348E-19 |
| ????D | ?????3.25933E-23 |
| ????E | ????-1.06061E-27 |
In addition, in the table 12, represent and above-mentioned conditional (1)～(9) the corresponding value (condition respective value) that relates to the 3rd embodiment.
Table 12
| ????F | ????-190.51 |
| ????L | ????1250 |
| ????|f/L| | ????0.152 |
| ????vg | ????71.2 |
| ????F1 | ????173.28 |
| ????|f1/L| | ????0.139 |
| ????F2 | ???-41.36 |
| ????|f2/L| | ????0.033 |
| ????F3 | ????105.88 |
| ????|f3/L| | ????0.085 |
| ????F4 | ???-70.10 |
| ????|f4/L| | ????0.056 |
| ????28F5 | ????146.64 |
| ????|f5/L| | ????0.117 |
Fig. 9 represents is the longitudinal aberration and the distortion (crooked aberration) of the projection optical system that relates to of the 3rd embodiment, and what Figure 10 represented is its lateral aberration (intelligent image is poor) on meridian direction (tangential direction) and segment direction (sagitta of arc direction).In each aberration diagram, N.A. be the numerical aperture of the wafer W of projection optical system PL, what field height represented is the image height of wafer W side, among the astigmatism figure, what dotted line was represented is meridianal image surface (tangent line image planes), and what solid line was represented is segment image planes (sagittal image surfaces).In the spherical aberration, solid line is represented is aberration as standard wavelength's i line (365.015nm), what dotted line was represented is the aberration of the line of overgauge wavelength+3nm (368.015nm), dot-and-dash line is represented be than the standard wavelength little-aberration of the line of 3nm (362.015nm).Equally represent aberration for lateral aberration (intelligent image is poor) as standard wavelength's i line (365.015nm) with solid line, dot than standard wave and grow up+aberration of the line of 3nm (368.015nm), with dot-and-dash line represent than the standard wavelength little-aberration of the line of 3nm (362.015nm).
By relating to the projection optical system of the 3rd embodiment, though what be appreciated that employing is the structure of the both sides heart far away, in roomy exposure area, not only can be good at revisal for distortion especially, for comprising that the aberration that color causes also can keep in balance, carry out well revisal.
Though the example of expression is to use the i line (light that the light of λ=365nm) uses during as exposure in the above-mentioned form of implementation, the present invention is not limited thereto, use the extreme ultraviolet light such as light of excimer laser or the g line (wavelength is 435.8nm) of mercury vapor lamp etc., and use the light of the ultraviolet region beyond the above-mentioned zone also to be fine certainly.
Below, with reference to process flow diagram shown in Figure 11, the action the when projection aligner that use is had a projection optical system that relates to the foregoing description forms the circuitous pattern of appointment on wafer describes.
At first, in the step S1 of Figure 11, deposited metal film on one group of wafer W.In next step step S2, on the metal film on this group wafer W, apply photoresist.Then, in the S3 step, use has the projection aligner among Fig. 1 of projection optical system PL in the foregoing description (Fig. 2,5 or Fig. 8), by this projection optical system PL the picture of the figure on the first minification mask plate R is exposed in order, is replicated in each reflector space on this group wafer W.In step S4 thereafter, photoresist on this group wafer W is carried out video picture, and in step S5, corrode etching as mask, the corresponding circuitous pattern of figure in each emitting area on this group wafer W on formation and the first minification mask plate R by the resist figure that will organize on the wafer W.Then, by on above-mentioned each layer, forming one deck circuitous pattern manufacturing equipment of semiconductor element etc. just again.
At this moment, though this projection optical system is the structure of the both sides heart far away, owing to can suppress the deterioration of the imaging performance that the absorption because of the glass material that uses causes, numerical aperture N.A. is bigger, even first minification mask plate R, have crooked existing picture to take place to each wafer W of picture, also can on each wafer W, form microcircuit pattern unchangeably with high degree of resolution as exposure.In addition, because the exposure area of projection optical system PL is very big, can make main equipment in large quantity.
The present invention is not limited to above-mentioned form of implementation, only otherwise break away from central idea of the present invention, adopts various structures all to be fine certainly.
If adopt projection optical system of the present invention, though it adopts the structure of the both sides heart far away, but can suppress because the deterioration of the imaging performance that the absorption of the glass material that uses causes, guarantee large-numerical aperture and roomy exposure area, and, for each aberration, particularly can carry out revisal admirably to distortion.In addition, can also obtain small-sized and have high performance projection optical system.
In addition, if use exposure device of the present invention, because it possesses the structure with both sides heart far away, can suppress because the deterioration of the imaging performance that the absorption of the glass material that uses causes owing to have, can obtain the projection optical system of bigger numerical aperture and roomy exposure area, even mask, substrate have crooked existing picture to take place, also can on substrate, duplicate microcircuit pattern with high degree of resolution.In addition, because the exposure area of projection optical system PL is very big, so can on on-chip roomy exposure area, form atomic little circuitous pattern.And, if adopt device manufacturing method of the present invention, even when mask, substrate have crooked the generation, also can make high-performance equipment in enormous quantities in high quality.
Claims (9)
1. with the projection optical system of graphic projection on the 2nd object of the 1st object, it is characterized in that: this projection optical system has the aspheric surface of a face at least, has multiple glass material, and this multiple glass material comprises refractive index at the glass material more than 1.57,
And constitute the negative lens of the most close imaging side in the lens of above-mentioned projection optical system, satisfy following conditional:
|f/L|＜0.25
n≤1.55
Wherein, f is the focal length of the negative lens of the most close above-mentioned imaging side, and L is the distance of above-mentioned the 1st object to the 2 objects, and n is the refractive index of the negative lens of the most close above-mentioned imaging side.
2. as claim 1 record projection optical system, it is characterized in that: the most close above-mentioned imaging side negative lens also satisfies following conditional,
vg＞50
Wherein vg is the Abbe number of the most close above-mentioned imaging side negative lens.
3. as the projection optical system of claim 1 record, it is characterized in that: the most close above-mentioned imaging side negative lens and then satisfy following conditional:
vg＞60
Wherein vg is the Abbe number of the most close above-mentioned imaging side negative lens.
4. with the projection optical system of graphic projection on the 2nd object of the 1st object, it is characterized in that:
Above-mentioned projection optical system has multiple glass material, and this multiple glass material comprises refractive index at the glass material more than 1.57, and constitutes the negative lens of the most close imaging side in the lens of above-mentioned projection optical system, satisfies following conditional:
|f/L|＜0.25
vg＞60
Wherein, f is the focal length of the negative lens of the most close above-mentioned imaging side, and L is the distance of above-mentioned the 1st object to the 2 objects, and vg is the Abbe number of the most close above-mentioned imaging side negative lens.
5. as the projection optical system of claim 4 record, it is characterized in that: above-mentioned projection optical system has the aspheric surface of a face at least.
6. as the projection optical system of any record of claim 1～5, it is characterized in that: have from above-mentioned the 1st object side, in the following order
The poly-degree of light that comprises negative lens more than 1 piece is positive lens combination,
The poly-degree of light that comprises negative lens more than 2 pieces is the 2nd negative lens combination,
The poly-degree of light that comprises positive lens more than 3 pieces is the 3rd positive lens combination,
The poly-degree of light that comprises negative lens more than 2 pieces is the 4th negative lens combination,
Comprise negative lens more than 2 pieces and comprise the lens combination that the poly-degree of light of positive lens more than 3 pieces is arranged for the 5th positive lens combination.
7. the projection optical system of claim 6 record is characterized in that: satisfy following conditional,
0.04＜f1/L＜0.4
0.015＜-f2/L＜0.15
0.02＜f3/L＜0.2
0.015＜-f4/L＜0.15
0.03＜f5/L＜0.3
Wherein, f1 is the focal length of above-mentioned the 1st lens combination,
F2 is the focal length of above-mentioned the 2nd lens combination,
F3 is the focal length of above-mentioned the 3rd lens combination,
F4 is the focal length of above-mentioned the 4th lens combination,
F5 is the focal length of above-mentioned the 5th lens combination,
L is the distance of above-mentioned the 1st object to the 2 objects.
8. exposure device, it is characterized in that: projection optical system with any record in the claim 1～7, has decision as the mask of above-mentioned the 1st object and as the lamp optical system of carrying the dress platform and aforementioned mask being thrown light on of the position of the substrate of above-mentioned the 2nd object
By the light of the exposure of sending from above-mentioned lamp optical system, by above-mentioned projection optical system with the graphic projection of aforementioned mask on above-mentioned substrate.
9. the manufacture method of an equipment is characterized in that: have following 4 procedures:
The 1st operation of coating photosensitive material on substrate,
By the above-mentioned projection optical system in the exposure device of claim 8 record, on above-mentioned substrate the 2nd operation of the image of the figure of projection aforementioned mask,
The 3rd operation that above-mentioned on-chip above-mentioned photosensitive material is carried out video picture,
Photosensitive material after this video picture is formed the 4th operation of the circuitous pattern of appointment as mask, on above-mentioned substrate.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001339424 | 2001-11-05 | ||
| JP339424/2001 | 2001-11-05 | ||
| JP2002200695A JP4228130B2 (en) | 2001-11-05 | 2002-07-10 | Projection optical system, exposure apparatus, and device manufacturing method |
| JP200695/2002 | 2002-07-10 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1417610A true CN1417610A (en) | 2003-05-14 |
| CN100483172C CN100483172C (en) | 2009-04-29 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB021466696A Expired - Fee Related CN100483172C (en) | 2001-11-05 | 2002-11-01 | Projection optical system, explosure device and making process of equipment |
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| Country | Link |
|---|---|
| JP (1) | JP4228130B2 (en) |
| KR (1) | KR20030038427A (en) |
| CN (1) | CN100483172C (en) |
| TW (1) | TW588223B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005001543A1 (en) * | 2003-06-26 | 2005-01-06 | Nikon Corporation | Projection optical system, exposure system, and device production method |
| WO2012072004A1 (en) * | 2010-12-01 | 2012-06-07 | 上海微电子装备有限公司 | Projection objective lens system and microlithography system using the same |
| CN103105666A (en) * | 2011-11-10 | 2013-05-15 | 上海微电子装备有限公司 | Exposure projection objective lens |
| CN103364928A (en) * | 2012-03-31 | 2013-10-23 | 上海微电子装备有限公司 | Projection objective lens optical system |
| CN107664809A (en) * | 2016-07-29 | 2018-02-06 | 上海微电子装备（集团）股份有限公司 | A kind of projection objective |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4779394B2 (en) * | 2005-03-23 | 2011-09-28 | 株式会社ニコン | Projection optical system, exposure apparatus, and exposure method |
| JP2010091751A (en) | 2008-10-07 | 2010-04-22 | Canon Inc | Projection optical system and exposure apparatus |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3819048B2 (en) * | 1995-03-15 | 2006-09-06 | 株式会社ニコン | Projection optical system, exposure apparatus including the same, and exposure method |
| JP3864399B2 (en) * | 1996-08-08 | 2006-12-27 | 株式会社ニコン | Projection exposure apparatus, projection optical system used in the projection exposure apparatus, and device manufacturing method |
| JP2000056219A (en) * | 1998-08-11 | 2000-02-25 | Nikon Corp | Optical projection system |
| JP2001051193A (en) * | 1999-06-03 | 2001-02-23 | Nikon Corp | Projection optical system projection exposing device provided with the system and manufacture of device |
-
2002
- 2002-07-10 JP JP2002200695A patent/JP4228130B2/en not_active Expired - Fee Related
- 2002-10-22 TW TW091124319A patent/TW588223B/en active
- 2002-11-01 CN CNB021466696A patent/CN100483172C/en not_active Expired - Fee Related
- 2002-11-05 KR KR1020020068092A patent/KR20030038427A/en not_active Application Discontinuation
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005001543A1 (en) * | 2003-06-26 | 2005-01-06 | Nikon Corporation | Projection optical system, exposure system, and device production method |
| WO2012072004A1 (en) * | 2010-12-01 | 2012-06-07 | 上海微电子装备有限公司 | Projection objective lens system and microlithography system using the same |
| EP2648027A1 (en) * | 2010-12-01 | 2013-10-09 | Shanghai Micro Electronics Equipment Co., Ltd. | Projection objective lens system and microlithography system using the same |
| EP2648027A4 (en) * | 2010-12-01 | 2014-05-07 | Shanghai Microelectronics Equi | Projection objective lens system and microlithography system using the same |
| US8970964B2 (en) | 2010-12-01 | 2015-03-03 | Shanghai Micro Electronics Equipment Co., Ltd. | Projection objective lens system |
| CN103105666A (en) * | 2011-11-10 | 2013-05-15 | 上海微电子装备有限公司 | Exposure projection objective lens |
| CN103105666B (en) * | 2011-11-10 | 2015-04-15 | 上海微电子装备有限公司 | Exposure projection objective lens |
| CN103364928A (en) * | 2012-03-31 | 2013-10-23 | 上海微电子装备有限公司 | Projection objective lens optical system |
| CN103364928B (en) * | 2012-03-31 | 2015-09-30 | 上海微电子装备有限公司 | A kind of projection objective lens optical system |
| CN107664809A (en) * | 2016-07-29 | 2018-02-06 | 上海微电子装备（集团）股份有限公司 | A kind of projection objective |
| CN107664809B (en) * | 2016-07-29 | 2019-11-26 | 上海微电子装备（集团）股份有限公司 | A kind of projection objective |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100483172C (en) | 2009-04-29 |
| TW588223B (en) | 2004-05-21 |
| JP2003202494A (en) | 2003-07-18 |
| JP4228130B2 (en) | 2009-02-25 |
| KR20030038427A (en) | 2003-05-16 |
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