WO2005001543A1 - Systeme optique de projection, systeme d'exposition et procede de production correspondant - Google Patents

Systeme optique de projection, systeme d'exposition et procede de production correspondant Download PDF

Info

Publication number
WO2005001543A1
WO2005001543A1 PCT/JP2004/008732 JP2004008732W WO2005001543A1 WO 2005001543 A1 WO2005001543 A1 WO 2005001543A1 JP 2004008732 W JP2004008732 W JP 2004008732W WO 2005001543 A1 WO2005001543 A1 WO 2005001543A1
Authority
WO
WIPO (PCT)
Prior art keywords
lens group
projection optical
optical system
optical
refractive power
Prior art date
Application number
PCT/JP2004/008732
Other languages
English (en)
Japanese (ja)
Inventor
Yasuhiro Omura
Original Assignee
Nikon Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corporation filed Critical Nikon Corporation
Publication of WO2005001543A1 publication Critical patent/WO2005001543A1/fr

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70241—Optical aspects of refractive lens systems, i.e. comprising only refractive elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B13/00—Optical objectives specially designed for the purposes specified below
    • G02B13/24—Optical objectives specially designed for the purposes specified below for reproducing or copying at short object distances
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B9/00—Optical objectives characterised both by the number of the components and their arrangements according to their sign, i.e. + or -
    • G02B9/64—Optical objectives characterised both by the number of the components and their arrangements according to their sign, i.e. + or - having more than six components

Definitions

  • the present invention relates to a projection optical system, an exposure apparatus, and a device manufacturing method, and more particularly to a projection apparatus suitable for an exposure apparatus used when manufacturing a micro device such as a semiconductor element or a liquid crystal display element by a photolithographic process. It relates to an optical system.
  • an exposure apparatus that transfers a pattern image of a reticle as a mask onto a photosensitive substrate such as a resist-coated wafer or a glass plate via a projection optical system is used.
  • a photosensitive substrate such as a resist-coated wafer or a glass plate
  • a projection optical system As the pattern of a semiconductor integrated circuit or the like becomes finer, it is desired to improve the resolving power of a projection optical system. In order to improve the resolution of the projection optical system, it is necessary to shorten the wavelength of the exposure light and increase the number of apertures on the image side.
  • the present invention has been made in view of the above-described problems, and has a small size in which various aberrations are satisfactorily corrected while securing a sufficiently large image-side numerical aperture and a sufficiently large effective imaging area. High answer It is an object to provide an image projection optical system.
  • the present invention uses a high-resolution projection optical system having a sufficiently wide effective imaging area.
  • Another object of the present invention is to provide a device manufacturing method capable of manufacturing a good microdevice using an exposure apparatus that performs good projection exposure with high throughput and high resolution.
  • a projection optical system that forms a reduced image of a first surface on a second surface includes:
  • a first relay system including at least one aspheric optical surface
  • a second lens group including at least two negative lenses and having a negative refractive power; a second relay system including at least one aspheric optical surface;
  • a third lens group including at least two positive lenses and having a positive refractive power; a third relay system including at least one aspheric optical surface;
  • a fourth lens group including at least two negative lenses and having a negative refractive power
  • a fourth relay system including at least one aspheric optical surface
  • a fifth lens group including at least two positive lenses and having a positive refractive power; a fifth relay system including at least one aspheric optical surface;
  • a sixth lens group having a positive refractive power or a negative refractive power.
  • a first lens group disposed in an optical path between the first surface and the second surface and having a positive refractive power
  • At least one aspherical lens disposed in an optical path between the first lens group and the second surface;
  • a first relay system including a surface-shaped optical surface,
  • a second lens group disposed in an optical path between the first relay system and the second surface and including at least two negative lenses and having a negative refractive power;
  • a second relay system disposed in an optical path between the second lens group and the second surface, the second relay system including at least one aspherical optical surface;
  • a third lens group disposed in an optical path between the second relay system and the second surface and including at least two positive lenses and having a positive refractive power;
  • a third relay system disposed in an optical path between the third lens group and the second surface, the third relay system including at least one aspherical optical surface;
  • a fourth lens group disposed in an optical path between the third relay system and the second surface and including at least two negative lenses and having a negative refractive power;
  • a fourth relay system disposed in an optical path between the fourth lens group and the second surface, the fourth relay system including at least one aspherical optical surface;
  • a fifth lens group disposed in an optical path between the fourth relay system and the second surface, including at least two positive lenses, and having a positive refractive power;
  • a fifth relay system disposed in an optical path between the fifth lens group and the second surface, the fifth relay system including at least one aspheric optical surface;
  • a projection optical system comprising: a sixth lens group disposed in an optical path between the fifth relay system and the second surface and having a positive refractive power or a negative refractive power.
  • the numerical aperture on the image side is A
  • the maximum image height is Ym
  • the maximum effective radius of the optical surface having the largest effective radius among the optical surfaces in the projection optical system is M
  • the total length of the projection optical system is When L
  • an illumination system for illuminating a mask set on the first surface, and a photosensitive substrate set on the second surface with an image of a pattern formed on the mask there is provided an exposure apparatus comprising: a projection optical system according to the first mode and the third mode to be formed thereon.
  • the illumination step of illuminating the mask set on the first surface, and the illumination step illuminated by the illumination step via the projection optical system of the first and third aspects comprising: an exposure step of exposing a pattern of a mask on a photosensitive substrate set on the second surface; and a development step of developing the photosensitive substrate exposed in the exposure step. Provide a way.
  • the present invention it is possible to realize a small, high-resolution projection optical system in which various aberrations are satisfactorily corrected, while securing a sufficiently large image-side numerical aperture and a sufficiently wide effective imaging area. You. Therefore, in the exposure apparatus equipped with the projection optical system of the present invention, good projection exposure can be performed with high throughput and high resolution, and fine microdevices with high throughput and high resolution can be obtained. Can be manufactured.
  • FIG. 1 is a view schematically showing a configuration of an exposure apparatus including a projection optical system according to an embodiment of the present invention.
  • FIG. 2 is a diagram illustrating a lens configuration of a projection optical system according to a first embodiment.
  • FIG. 3 is a diagram showing lateral aberration in the first example.
  • FIG. 4 is a diagram illustrating a lens configuration of a projection optical system according to a second embodiment.
  • FIG. 5 is a diagram showing lateral aberration in a second example.
  • FIG. 6 is a diagram illustrating a lens configuration of a projection optical system according to a third embodiment.
  • FIG. 7 is a diagram showing lateral aberration in a third example.
  • FIG. 8 is a flowchart of a method for obtaining a semiconductor device as a micro device.
  • FIG. 9 is a flowchart of a method for obtaining a liquid crystal display element as a micro device.
  • the first lens group having a positive refractive power, the second lens group having a negative refractive power, the third lens group having a positive refractive power, the fourth lens group having a negative refractive power, and the positive refractive power A six-group configuration including a fifth lens group having a positive refractive power or a sixth lens group having a negative refractive power is employed. With this configuration, it is possible to disperse the refractive power necessary to satisfy the Petzval condition, and to avoid a situation where the refractive power is concentrated on a specific lens group and large aberration occurs.
  • the projection optical system of the present invention five relay systems are arranged between each lens group, and at least one aspherical optical surface is introduced into each relay system.
  • the occurrence of various aberrations such as spherical aberration, coma, and distortion (distortion) is efficiently reduced, while maintaining a sufficiently large image-side numerical aperture and a sufficiently wide effective imaging area.
  • the size of the projection optical system can be reduced.
  • the F-number in the fourth lens group tends to increase, it is preferable to arrange at least three negative lenses in the fourth lens group to suppress the occurrence of aberration.
  • the present invention when the present invention is applied to an exposure apparatus, even when a mask to be set on the object plane or a photosensitive substrate to be set on the image plane is slightly displaced in the optical axis direction, the magnification is not changed. It is desirable that both sides of the object side and the image side be substantially telecentric so that they do not substantially change. In this case, by arranging the variable aperture stop in the fifth lens group, it is possible to maintain the telecentricity on both sides even when the numerical aperture is changed according to the form of the device pattern.
  • the second lens group is constituted only by the negative lens, it becomes possible to efficiently obtain the refractive power required for the lens group, thereby realizing the miniaturization of the projection optical system.
  • the ability to do S Similarly, by configuring the third lens group only with the positive lens, it becomes possible to efficiently obtain the refracting power required for the lens group, and to reduce the size of the projection optical system.
  • R is the radius of curvature of each optical surface (vertical radius of curvature for an aspherical optical surface)
  • D is the effective radius of each optical surface
  • Ni is Nr is the exit side refractive index of each optical surface.
  • conditional force (1) and the force S that requires a large-diameter lens by satisfying conditional force (1) and the force S that requires a large-diameter lens, the tolerance allowed in the manufacture of the lens that constitutes the fifth lens group increases. For example, the stability of the optical system after being mounted on the exposure apparatus is improved. In order to further exert the above-described effects of the present invention, it is more preferable to set the upper limit of conditional expression (1) to 0.52.
  • all aspheric optical surfaces included in the projection optical system satisfy the following conditional expression (2).
  • S is the effective radius of the aspherical optical surface included in the projection optical system
  • Ym is the maximum image height.
  • conditional expression (2) When all the aspherical optical surfaces included in the projection optical system satisfy the conditional expression (2), the difficulty of manufacturing the aspherical surface and the difficulty of guaranteeing the accuracy of the aspherical surface are relatively low. As a result, an optical system having good high resolution can be stably supplied. It is more preferable to set the upper limit of conditional expression (2) to 10.0 in order to achieve the above effects of the present invention more favorably.
  • conditional expressions (3) and (4) A is the numerical aperture on the image side, Ym is the maximum image height, and M is the maximum of the optical surface having the largest effective radius among the optical surfaces in the projection optical system. It is a large effective radius, and L is the total length of the projection optical system (the distance between the object plane and the image plane).
  • conditional expression (3) a good image-side numerical aperture A and a maximum image height Ym (fin, wide, effective image forming area) are ensured, It is possible to maintain a 2M aperture that can produce quality lens materials.
  • conditional expression (4) it is possible to keep the overall length L of the optical system relatively small while securing a large maximum image height Ym (and thus a large effective imaging area).
  • all aspheric optical surfaces constituting the projection optical system satisfy the following conditional expression (5).
  • S is the effective radius of each aspherical optical surface
  • M is the maximum effective radius of the optical surface having the largest effective radius among the optical surfaces in the projection optical system as described above. It is.
  • the present invention provides a small, high-resolution projection optical system in which various aberrations are well corrected while securing a sufficiently large image-side numerical aperture and a sufficiently wide effective imaging area.
  • Realization ability S can. Therefore, with the exposure apparatus equipped with the projection optical system of the present invention, it is possible to perform good projection exposure at high throughput and high resolution, and to manufacture good microdevices at high throughput and high resolution. it can.
  • FIG. 1 is a diagram schematically showing a configuration of an exposure apparatus including a projection optical system according to an embodiment of the present invention.
  • the Z axis is parallel to the optical axis AX of the projection optical system PL
  • the Y axis is parallel to the plane of FIG. 1 in a plane perpendicular to the optical axis AX
  • the Y axis is in a plane perpendicular to the optical axis AX.
  • the exposure apparatus shown in FIG. 1 includes a KrF excimer laser light source as a light source LS for supplying illumination light.
  • the light emitted from the light source LS illuminates a reticle (mask) R as a projection master on which a predetermined pattern is formed, via an illumination optical system IL.
  • the illumination optical system IL includes a fly-eye lens, an illumination aperture stop, a variable field stop (reticle blind), a condenser lens system, and the like for uniformizing the illuminance distribution of the exposure light.
  • the reticle R is held in parallel with the XY plane on the reticle stage RS via the reticle holder RH.
  • the reticle stage RS can be moved two-dimensionally along the reticle plane (that is, the XY plane) by the action of a drive system (not shown), and its position coordinates are determined by an interferometer RIF using a reticle moving mirror RM. It is configured to be measured and position controlled.
  • Light from the pattern formed on the reticle R forms a reticle pattern image on the photoresist-coated wafer W (photosensitive substrate) via the projection optical system PL.
  • the projection optical system PL has a variable aperture stop AS (not shown in FIG. 1) arranged near the pupil position, and is substantially telecentric on both the reticle R side and the wafer W side. Is configured. Then, at the pupil position of the projection optical system PL, an image of the secondary light source on the illumination pupil plane of the illumination optical system is formed, and the light passing through the projection optical system PL illuminates the lens W in a Keller manner.
  • the wafer W is held on a wafer stage WS via a wafer table (wafer holder) WT in parallel with the XY plane.
  • the wafer stage WS can be moved two-dimensionally along the wafer surface (that is, the XY plane) by the action of a drive system (not shown), and its position coordinates are determined by an interferometer WIF using a wafer moving mirror WM. And the position is controlled.
  • the pattern of the reticle R is collectively exposed to each exposure area while the wafer W is two-dimensionally driven and controlled in a plane orthogonal to the optical axis AX of the projection optical system PL.
  • the pattern of the reticle R is sequentially exposed on each exposure area of the wafer W by repeating the operation, that is, by a step-and-repeat method.
  • all the optical members (the lens component and the plane-parallel plate) constituting the projection optical system PL are formed of quartz (Si ⁇ ). Also, the light source LS
  • the center wavelength of the laser beam supplied from the KrF excimer laser light source is 248. Onm, and the refractive index of quartz with respect to this center wavelength is 1.50839.
  • the projection optical system PL of each embodiment includes, in order from the reticle side, a first lens group G1 having a positive refractive power, a first relay system R12, a second lens group G2 having a negative refractive power, 2 relay system R23, third lens group G3 with positive refractive power, third relay system R34, fourth lens group G4 with negative refractive power, Equipped with a relay system R45, a fifth lens group G5 having a positive refractive power, a fifth relay system R56, and a sixth lens group G6 having a positive or negative refractive power.
  • the height of the aspheric surface in the direction perpendicular to the optical axis is defined as y, and along the optical axis from the tangent plane at the vertex of the aspheric surface to a position on the aspheric surface at height y.
  • the distance (sag amount) is z
  • the vertex radius of curvature is r
  • the conic coefficient is ⁇
  • the nth order aspheric coefficient is C and n
  • FIG. 2 is a diagram showing a lens configuration of a projection optical system according to the first embodiment.
  • the first lens group G1 includes, in order from the reticle side, a biconvex lens L1 and a positive meniscus lens L2 having a convex surface facing the reticle side.
  • the first relay system R12 is composed of a negative meniscus lens L3 having an aspherical concave surface facing the wafer side.
  • the second lens group G2 is composed of, in order from the reticle side, a biconcave lens L4 having an aspherical concave surface facing the wafer side, and a biconcave lens L5.
  • the second relay system R23 includes a positive meniscus lens L6 having an aspherical concave surface facing the reticle side.
  • the third lens group G3 includes, in order from the reticle side, a biconvex lens L7, a biconvex lens L8, a biconvex lens L9, and a positive meniscus lens L10 having a convex surface facing the reticle side.
  • the third relay system R34 is composed of a positive meniscus lens L11 having an aspherical concave surface facing the wafer side.
  • the fourth lens group G4 includes, in order from the reticle side, a plano-concave lens L12 having a flat surface facing the reticle side, a biconcave lens L13, a biconcave lens L14 having an aspherical concave surface facing the wafer side, and a concave surface on the reticle side. And a positive meniscus lens L15.
  • the fourth relay system R45 includes a positive meniscus lens L16 having an aspherical concave surface facing the reticle side.
  • the fifth lens group G5 includes, in order from the reticle side, a positive meniscus lens L17 having a concave surface facing the reticle side, a biconvex lens L18, an aperture stop AS, and a reticle side.
  • the fifth relay system R56 is composed of a positive meniscus lens L22 having an aspherical concave surface facing the wafer side.
  • the sixth lens group G6 includes, in order from the reticle side, a positive meniscus lens L23 having an aspherical concave surface facing the wafer side, and a biconcave lens L24.
  • a first plane-parallel plate P1 is disposed in the optical path between the reticle R and the first lens group G1
  • a second plane-parallel plate is disposed in the optical path between the sixth lens group G6 and the wafer W.
  • P2 is located.
  • Table (1) lists values of specifications of the projection optical system according to the first example.
  • ⁇ is the center wavelength of the exposure light
  • / 3 is the projection magnification
  • ⁇ is the number of apertures on the image side (wafer side)
  • Ym is the maximum image height (image field radius)
  • L represents the total length of the optical system.
  • the surface number indicates the order of the surface from the reticle side
  • r indicates the radius of curvature of each optical surface (vertical radius of curvature: mm for an aspheric surface)
  • d indicates The on-axis spacing of each optical surface, that is, the surface spacing (mm), and D (S) indicates the effective radius (mm) of each optical surface.
  • the above notation is also applied to the following tables (2) and (3).
  • FIG. 3 is a diagram illustrating the lateral aberration in the first example.
  • Y indicates the image height (mm).
  • A 0.74
  • FIG. 4 is a diagram illustrating a lens configuration of a projection optical system according to a second embodiment.
  • the first lens group G1 includes, in order from the reticle side, a biconvex lens L1 and a negative meniscus lens L2 having a convex surface facing the reticle side.
  • the first relay system R12 is composed of a negative meniscus lens L3 having an aspherical concave surface facing the wafer side.
  • the second lens group G2 includes, in order from the reticle side, a biconcave lens L4 having an aspherical concave surface facing the wafer side, and a negative meniscus lens L5 having a concave surface facing the reticle side.
  • the second relay system R23 includes a positive meniscus lens L6 having an aspherical concave surface facing the reticle side.
  • the third lens group G3 includes, in order from the reticle side, a biconvex lens L7, a biconvex lens L8, a biconvex lens L9, and a positive meniscus lens L10 having a convex surface facing the reticle side.
  • the third relay system R34 has an aspherical concave surface facing the wafer side. It consists of a positive meniscus lens LI1.
  • the fourth lens group G4 includes, in order from the reticle side, a plano-concave lens L12 having a flat surface facing the reticle side, a biconcave lens L13, a biconcave lens L14 having an aspheric concave surface facing the wafer side, and a concave surface on the reticle side. And a positive meniscus lens L15.
  • the fourth relay system R45 includes a positive meniscus lens L16 having an aspherical concave surface facing the reticle side.
  • the fifth lens group G5 includes, in order from the reticle side, a biconvex lens L17, a positive meniscus lens L18 having a convex surface facing the reticle side, an aperture stop AS, a positive meniscus lens L19 having a convex surface facing the reticle side, and a biconvex lens. L20.
  • the fifth relay system R56 is composed of, in order from the reticle side, a positive meniscus lens L21 having a convex surface facing the reticle side, and a positive meniscus lens L22 having a non-spherical concave surface facing the wafer side.
  • the sixth lens group G6 includes, in order from the reticle side, a positive meniscus lens L23 having an aspherical concave surface facing the wafer side, and a biconcave lens L24.
  • a first plane-parallel plate P1 is disposed in the optical path between the reticle R and the first lens group G1
  • a second plane-parallel plate is disposed in the optical path between the sixth lens group G6 and the wafer W.
  • P2 is located. Table 2 below summarizes the data values of the projection optical system of the second embodiment.
  • FIG. 5 is a diagram showing the lateral aberration in the second example.
  • Y indicates the image height (mm).
  • A 0.76
  • FIG. 6 is a diagram illustrating a lens configuration of a projection optical system according to a third embodiment.
  • the first lens group G1 includes, in order from the reticle side, a biconvex lens L1 and a negative meniscus lens L2 having a convex surface facing the reticle side.
  • the first relay system R12 is composed of a negative meniscus lens L3 having an aspherical concave surface facing the wafer side.
  • the second lens group G2 includes, in order from the reticle side, a biconcave lens L4 having an aspherical concave surface facing the wafer side, and a negative meniscus lens L5 having a concave surface facing the reticle side.
  • the second relay system R23 includes a positive meniscus lens L6 having an aspherical concave surface facing the reticle side.
  • the third lens group G3 includes, in order from the reticle side, a biconvex lens L7, a biconvex lens L8, a biconvex lens L9, and a positive meniscus lens L10 having a convex surface facing the reticle side.
  • the third relay system R34 is composed of a positive meniscus lens L11 with the aspherical concave surface facing the wafer side.
  • the fourth lens group G4 includes, in order from the reticle side, a biconcave lens L12, a biconcave lens L13, and a biconcave lens L14 having an aspherical concave surface facing the wafer side.
  • the fourth relay system R45 includes a positive meniscus lens L15 having an aspherical concave surface facing the reticle side.
  • the fifth lens group G5 includes, in order from the reticle side, a positive meniscus lens L16 having a concave surface facing the reticle side, a positive meniscus lens L17 having a concave surface facing the reticle side, a biconvex lens L18, an aperture stop AS, It comprises a convex lens L19, a biconvex lens L20, and a positive meniscus lens L21 with the convex surface facing the reticle side.
  • the fifth relay system R56 includes, in order from the reticle side, a positive meniscus lens L22 having an aspheric concave surface facing the wafer side, and a negative meniscus lens L23 having an aspheric concave surface facing the wafer side. Being done.
  • the sixth lens group G6 includes, in order from the reticle side, a positive meniscus lens L24 having a convex surface facing the reticle side, and a negative meniscus lens L25 having a concave surface facing the reticle side.
  • a first plane-parallel plate P1 is disposed in the optical path between the reticle R and the first lens group G1, and a second plane-parallel plate P2 is disposed in the optical path between the sixth lens group G6 and the wafer W. Is arranged.
  • Table 3 shows values of specifications of the projection optical system according to the third example.
  • FIG. 7 is a diagram illustrating the lateral aberration in the third example.
  • Y indicates the image height (mm).
  • A 0.78
  • a circuit pattern can be exposed at a high resolution according to the step-and-repeat method in a rectangular exposure area of, for example, 33 mm ⁇ 26 mm. .
  • a circuit pattern can be exposed at a high resolution in a rectangular exposure area of, for example, 32 mm ⁇ 25 mm in accordance with a step-and-repeat method.
  • the reticle (mask) is illuminated by the illumination system (illumination step), and the transfer pattern formed on the mask is exposed on the photosensitive substrate using the projection optical system ( Exposure process) allows micro devices (semiconductor devices, image sensors, liquid crystal displays Element, thin-film magnetic head, etc.).
  • micro devices semiconductor devices, image sensors, liquid crystal displays Element, thin-film magnetic head, etc.
  • FIG. 8 an example of a method for obtaining a semiconductor device as a micro device by forming a predetermined circuit pattern on a wafer or the like as a photosensitive substrate using the exposure apparatus of the present embodiment. Will be explained.
  • a metal film is deposited on one lot of wafers.
  • a photoresist is applied on the metal film on the one lot wafer.
  • an image of the pattern on the mask is sequentially exposed and transferred to each shot area on the wafer of the lot through the projection optical system.
  • the photo resist on the one lot of wafers is developed, and in step 305, the pattern on the mask is etched by etching the one lot of wafers using the resist pattern as a mask. A corresponding circuit pattern is formed in each shot area on each wafer.
  • a device such as a semiconductor element is manufactured by forming a circuit pattern of an upper layer and the like.
  • a semiconductor device manufacturing method a semiconductor device having an extremely fine circuit pattern can be obtained with good throughput.
  • a metal is vapor-deposited on the wafer, a resist is applied on the metal film, and the force of performing each of the steps of exposure, development, and etching is performed on the wafer prior to these steps.
  • a resist may be applied on the silicon oxide film, and the respective steps such as exposure, development, and etching may be performed.
  • a liquid crystal display element as a microdevice can be obtained by forming a predetermined pattern (circuit pattern, electrode pattern, etc.) on a plate (glass substrate).
  • a predetermined pattern circuit pattern, electrode pattern, etc.
  • a plate glass substrate
  • FIG. 9 in a pattern forming step 401, a so-called optical lithography process of transferring and exposing a mask pattern onto a photosensitive substrate (eg, a glass substrate coated with a resist) using the exposure apparatus of the present embodiment is performed. .
  • a predetermined pattern including a large number of electrodes and the like is formed on the photosensitive substrate.
  • the exposed substrate is subjected to various steps such as a developing step, an etching step, and a resist removing step. As a result, a predetermined pattern is formed on the substrate, and the process proceeds to the next color filter forming step 402.
  • a large number of sets of three dots corresponding to R (Red), G (Green), and B (Blue) are arranged in a matrix, or R, G, A color filter is formed by arranging a plurality of sets of filters of three stripes B in the horizontal scanning line direction.
  • a cell assembling step 403 is performed.
  • a liquid crystal panel liquid crystal cell
  • a liquid crystal is assembled using the substrate having the predetermined pattern obtained in the pattern forming step 401, the color filter obtained in the color filter forming step 402, and the like.
  • a liquid crystal is injected between the substrate having the predetermined pattern obtained in the pattern forming step 401 and the color filter obtained in the color filter forming step 402, and a liquid crystal panel ( Liquid crystal cell).
  • a module assembling step 404 components such as an electric circuit and a backlight for performing a display operation of the assembled liquid crystal panel (liquid crystal cell) are attached to complete a liquid crystal display element.
  • components such as an electric circuit and a backlight for performing a display operation of the assembled liquid crystal panel (liquid crystal cell) are attached to complete a liquid crystal display element.
  • the present invention is applied to the step-and-repeat type exposure apparatus that collectively exposes the pattern of the reticle R to each exposure area of the wafer W.
  • the scanning and exposing of the pattern of the reticle R on each exposure area of the wafer W while moving the wafer W and the reticle R relatively to the projection optical system PL are not limited to this.
  • the present invention can also be applied to a scanning type exposure apparatus.
  • a KrF excimer laser light source that supplies 248. Onm wavelength light is used, but light having a predetermined wavelength that is not limited to this (for example, light from an ArF excimer laser) is used.
  • the present invention can be applied to any other suitable light source that supplies light having a wavelength of 193 nm and i-line (365 nm) from a mercury lamp. Further, in the above-described embodiment, the present invention is applied to the projection optical system mounted on the exposure apparatus. Applying I don't know

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Lenses (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

L'invention concerne un système de projection optique à haute résolution de petite taille qui procure une ouverture numérique latérale d'image suffisamment grande et une zone de formation d'image efficace suffisamment grande ainsi que diverses aberrations favorablement corrigées. Ce système comprend un premier groupe de lentilles à réfringence positive (G1), un deuxième groupe de lentilles à réfringence négative (G2), un troisième groupe de lentilles à réfringence positive (G3), un quatrième groupe de lentilles à réfringence négative (G4), un cinquième groupe de lentilles à réfringence positive (G5), et enfin, un sixième groupe de lentilles à réfringence négative (G6). Des système relais, du premier système relais (R12) au cinquième système relais (R56), sont placés respectivement entre les groupes de lentilles, chaque système relais comportant au moins un plan optique asphérique.
PCT/JP2004/008732 2003-06-26 2004-06-22 Systeme optique de projection, systeme d'exposition et procede de production correspondant WO2005001543A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003182885A JP2005017734A (ja) 2003-06-26 2003-06-26 投影光学系、露光装置、およびデバイス製造方法
JP2003-182885 2003-06-26

Publications (1)

Publication Number Publication Date
WO2005001543A1 true WO2005001543A1 (fr) 2005-01-06

Family

ID=33549564

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2004/008732 WO2005001543A1 (fr) 2003-06-26 2004-06-22 Systeme optique de projection, systeme d'exposition et procede de production correspondant

Country Status (2)

Country Link
JP (1) JP2005017734A (fr)
WO (1) WO2005001543A1 (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8908269B2 (en) 2004-01-14 2014-12-09 Carl Zeiss Smt Gmbh Immersion catadioptric projection objective having two intermediate images
US8913316B2 (en) 2004-05-17 2014-12-16 Carl Zeiss Smt Gmbh Catadioptric projection objective with intermediate images
US9772478B2 (en) 2004-01-14 2017-09-26 Carl Zeiss Smt Gmbh Catadioptric projection objective with parallel, offset optical axes
WO2018141713A1 (fr) 2017-02-03 2018-08-09 Asml Netherlands B.V. Appareil d'exposition
CN109856915A (zh) * 2017-11-30 2019-06-07 上海微电子装备（集团）股份有限公司 光刻投影物镜、边缘曝光系统和边缘曝光装置

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103499876B (zh) * 2013-10-10 2015-07-29 中国科学院光电技术研究所 一种大数值孔径的纯折射式投影光学系统
CN104035187B (zh) * 2014-06-06 2017-04-26 中国科学院光电技术研究所 一种大数值孔径的纯折射式干式投影光学系统

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000231058A (ja) * 1999-02-12 2000-08-22 Nikon Corp 投影光学系及び該投影光学系を備えた投影露光装置並びにデバイス製造方法
WO2001050171A1 (fr) * 1999-12-29 2001-07-12 Carl Zeiss Objectif de projection pourvu de surfaces de lentilles aspheriques disposees l'une a cote de l'autre
WO2002052303A2 (fr) * 2000-12-22 2002-07-04 Carl Zeiss Smt Ag Objectif de projection
WO2002052346A1 (fr) * 2000-12-22 2002-07-04 Carl Zeiss Smt Ag Objectif pourvu d'au moins une lentille aspherique
JP2002244036A (ja) * 2000-12-22 2002-08-28 Carl Zeiss:Fa 投影レンズ、及び微細構造化部品の製造方法
JP2002244035A (ja) * 2000-12-11 2002-08-28 Nikon Corp 投影光学系および該投影光学系を備えた露光装置
JP2002365538A (ja) * 2001-06-13 2002-12-18 Nikon Corp 投影光学系および該投影光学系を備えた露光装置
JP2002544569A (ja) * 1999-05-14 2002-12-24 カール−ツアイス−スチフツング マイクロリソグラフィー用の投影レンズ
EP1304594A2 (fr) * 2001-10-17 2003-04-23 Carl Zeiss Semiconductor Manufacturing Technologies Ag Appareil d'illumination par projection pour microlithographie à 200 nm
CN1417610A (zh) * 2001-11-05 2003-05-14 尼康株式会社 投影光学系统，曝光装置以及设备的制造方法

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000231058A (ja) * 1999-02-12 2000-08-22 Nikon Corp 投影光学系及び該投影光学系を備えた投影露光装置並びにデバイス製造方法
JP2002544569A (ja) * 1999-05-14 2002-12-24 カール−ツアイス−スチフツング マイクロリソグラフィー用の投影レンズ
WO2001050171A1 (fr) * 1999-12-29 2001-07-12 Carl Zeiss Objectif de projection pourvu de surfaces de lentilles aspheriques disposees l'une a cote de l'autre
JP2002244035A (ja) * 2000-12-11 2002-08-28 Nikon Corp 投影光学系および該投影光学系を備えた露光装置
WO2002052303A2 (fr) * 2000-12-22 2002-07-04 Carl Zeiss Smt Ag Objectif de projection
WO2002052346A1 (fr) * 2000-12-22 2002-07-04 Carl Zeiss Smt Ag Objectif pourvu d'au moins une lentille aspherique
JP2002244036A (ja) * 2000-12-22 2002-08-28 Carl Zeiss:Fa 投影レンズ、及び微細構造化部品の製造方法
JP2002365538A (ja) * 2001-06-13 2002-12-18 Nikon Corp 投影光学系および該投影光学系を備えた露光装置
EP1304594A2 (fr) * 2001-10-17 2003-04-23 Carl Zeiss Semiconductor Manufacturing Technologies Ag Appareil d'illumination par projection pour microlithographie à 200 nm
CN1417610A (zh) * 2001-11-05 2003-05-14 尼康株式会社 投影光学系统，曝光装置以及设备的制造方法

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8908269B2 (en) 2004-01-14 2014-12-09 Carl Zeiss Smt Gmbh Immersion catadioptric projection objective having two intermediate images
US9772478B2 (en) 2004-01-14 2017-09-26 Carl Zeiss Smt Gmbh Catadioptric projection objective with parallel, offset optical axes
US8913316B2 (en) 2004-05-17 2014-12-16 Carl Zeiss Smt Gmbh Catadioptric projection objective with intermediate images
US9019596B2 (en) 2004-05-17 2015-04-28 Carl Zeiss Smt Gmbh Catadioptric projection objective with intermediate images
US9134618B2 (en) 2004-05-17 2015-09-15 Carl Zeiss Smt Gmbh Catadioptric projection objective with intermediate images
US9726979B2 (en) 2004-05-17 2017-08-08 Carl Zeiss Smt Gmbh Catadioptric projection objective with intermediate images
WO2018141713A1 (fr) 2017-02-03 2018-08-09 Asml Netherlands B.V. Appareil d'exposition
US11092903B2 (en) 2017-02-03 2021-08-17 Asml Netherlands B.V. Exposure apparatus
CN109856915A (zh) * 2017-11-30 2019-06-07 上海微电子装备（集团）股份有限公司 光刻投影物镜、边缘曝光系统和边缘曝光装置

Also Published As

Publication number Publication date
JP2005017734A (ja) 2005-01-20

Similar Documents

Publication Publication Date Title
KR100866818B1 (ko) 투영광학계 및 이 투영광학계를 구비한 노광장치
JP3819048B2 (ja) 投影光学系及びそれを備えた露光装置並びに露光方法
WO2007119292A1 (fr) Système optique de projection, réfléchissant et réfractif; dispositif de projection, réfléchissant et réfractif; dispositif d'exposition à un balayage et procédé de fabrication dudit micro dispositif
JP4779394B2 (ja) 投影光学系、露光装置、および露光方法
WO2007086220A1 (fr) Systeme de prise d’images catadioptrique, dispositif d’exposition et procede de fabrication de dispositif
TW536735B (en) Optical condenser system, optical illumination system provided with the same, and exposure system
WO2005001543A1 (fr) Systeme optique de projection, systeme d'exposition et procede de production correspondant
JP4706171B2 (ja) 反射屈折投影光学系、露光装置及び露光方法
JP2007206319A (ja) 反射屈折光学系、露光装置及びマイクロデバイスの製造方法
WO2007114024A1 (fr) Système optique de projection, dispositif d'alignement, et procédé de fabrication de ce dispositif
JP2005003982A (ja) 投影光学系、露光装置および露光方法
JP2002244035A (ja) 投影光学系および該投影光学系を備えた露光装置
JP2005115127A (ja) 反射屈折投影光学系、露光装置及び露光方法
JP4228130B2 (ja) 投影光学系、露光装置及びデバイスの製造方法
KR100989606B1 (ko) 투영 광학계, 노광 장치 및 디바이스 제조 방법
JP4300509B2 (ja) 投影光学系、露光装置、および露光方法
JP4328940B2 (ja) 投影光学系、露光装置、および露光方法
TW200422790A (en) Optical projection system, light-exposure apparatus and light-exposure method
JP4482874B2 (ja) 投影光学系、露光装置、および露光方法
JP2002365538A (ja) 投影光学系および該投影光学系を備えた露光装置
JP2004086110A (ja) 投影光学系、露光装置及び露光方法
JP2006078592A (ja) 投影光学系及びそれを有する露光装置
WO2007132619A1 (fr) SystÈme optique d'imagerie, systÈme d'exposition, et procÉdÉ de fabrication d'un dispositif
JP5786919B2 (ja) 投影光学系、露光装置及び露光方法
JP2002023055A (ja) 結像光学系および該結像光学系を備えた露光装置

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): BW GH GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
122 Ep: pct application non-entry in european phase