CN109856915A - Photoetching projection objective lens, edge exposure system and edge exposure device - Google Patents
Photoetching projection objective lens, edge exposure system and edge exposure device Download PDFInfo
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- CN109856915A CN109856915A CN201711243395.8A CN201711243395A CN109856915A CN 109856915 A CN109856915 A CN 109856915A CN 201711243395 A CN201711243395 A CN 201711243395A CN 109856915 A CN109856915 A CN 109856915A
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- microscope group
- objective lens
- projection objective
- edge exposure
- photoetching projection
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Abstract
The present invention provides a kind of photoetching projection objective lens, the photoetching projection objective lens include the first microscope group, the second microscope group, third microscope group, the 4th microscope group, the 5th microscope group, the 6th microscope group, first microscope group, the second microscope group, third microscope group, the 4th microscope group, the 5th microscope group, the focal length satisfaction of the 6th microscope group: 0.05 < f1/f < 0.15；-0.32<f2/f<-0.22；0.08<f3/f<0.18；0.05<f4/f<0.15；-0.7<f5/f<-0.5；0.06<f6/f<0.16；Wherein, the total focal length of the photoetching projection objective lens is f, and the focal length of first microscope group is f1, the focal length of second microscope group is f2, and the focal length of the third microscope group is f3, and the focal length of the 4th microscope group is f4, the focal length of 5th microscope group is f5, and the focal length of the 6th microscope group is f6.A kind of photoetching projection objective lens provided by the invention enable to easy to operate.
Description
Technical field
The invention belongs to photolithographic exposure technical fields, are related to photoetching projection objective lens, edge exposure system and edge exposure dress
It sets.
Background technique
Silicon chip edge exposure is the important process link of IC circuit manufacture, the photoetching by using ultraviolet light to silicon chip surface
Glue, which is exposed, to be allowed to occur chemical change and develops complete the processing of removing photoresist of silicon chip edge.
But the spectral response range of the photoresist as used in different technique is different, in this way processing when
It waits, it is necessary to select different exposure cameras to be exposed according to specific photoresist, practical operation is comparatively laborious.
Summary of the invention
The purpose of the present invention is to provide photoetching projection objective lens, edge exposure system and edge exposure devices, it is intended to solve
Edge exposure needs that different exposure cameras is selected to be exposed bring operation according to specific photoresist numerous in the prior art
Trivial problem.
In order to solve the above technical problems, the present invention provides a kind of photoetching projection objective lens, the photoetching projection objective lens include
First microscope group, the second microscope group, third microscope group, the 4th microscope group, the 5th microscope group, the 6th microscope group, first microscope group, the second microscope group,
Third microscope group, the 4th microscope group, the 5th microscope group, the focal length satisfaction of the 6th microscope group:
0.05<f1/f<0.15；-0.32<f2/f<-0.22；0.08<f3/f<0.18；0.05<f4/f<0.15； -0.7<
f5/f<-0.5；0.06<f6/f<0.16；
Wherein, the total focal length of the photoetching projection objective lens is f, and the focal length of first microscope group is f1, second microscope group
Focal length be f2, the focal length of the third microscope group is f3, and the focal length of the 4th microscope group is f4, and the focal length of the 5th microscope group is
F5, the focal length of the 6th microscope group are f6.
The present invention is further arranged to, and the photoetching projection objective lens include at least six eyeglasses, and first microscope group is at least
Including an eyeglass, second microscope group includes at least an eyeglass, and the third microscope group includes at least an eyeglass, and described the
Four microscope groups include at least an eyeglass, and the 5th microscope group includes at least an eyeglass, and the 6th microscope group includes at least one
Eyeglass.
The present invention is further arranged to, and the material of at least six eyeglass is vitreous silica.
The present invention is further arranged to, and further includes having a diaphragm.
The present invention is further arranged to, and the diaphragm is set between the third microscope group and the 4th microscope group.
The present invention is further arranged to, and the size of the f is 367 millimeters, described f1, f2, f3, f4, f5, f6 and total coke
Ratio away from size between f are as follows:
F1/f=0.11, f2/f=-0.27, f3/f=0.13, f4/f=0.11, f5/f=-0.59, f6/f=0.11.
The present invention also provides a kind of edge exposure systems, including the as above any one photoetching projection objective lens, further include
Light source and light beam transfer module, the light source issue light beam and enter the lithographic projection object after the light beam transfer module
Mirror.
The present invention is further arranged to, and further includes having diaphragm component, several diaphragms, institute are provided on the diaphragm component
Diaphragm component is stated for loading several described diaphragms, and a diaphragm may be selected and be located at the third microscope group and the described 4th
Between microscope group.
The present invention is further arranged to, and the light beam transfer module is optical fiber.
The present invention is further arranged to, and the wave-length coverage of the light source is 220 nanometers~300 nanometers.
The present invention is further arranged to, and the wave-length coverage of the light source is 250 nanometers~280 nanometers.
The present invention also provides a kind of edge exposure devices, including the as above any one edge exposure system, further include
There are work stage module, control module, monitoring modular, the work stage module is described for driving substrate activity and being exposed
For detection module for monitoring in real time to exposure process, the control module is used to receive the feedback of the detection module and right
Work stage module is controlled.
The present invention also provides a kind of edge exposure methods using edge exposure device as described above, include at least following
Step: substrate is loaded to the work stage module, the light source is opened and issues exposing light beam, the exposing light beam is through the light beam
It is incident to the substrate after transfer module, photoetching projection objective lens, realizes the edge exposure of the substrate.
Compared with prior art, the present invention provides photoetching projection objective lens, edge exposure system and edge exposure device, light
After source issues light beam, by selecting so that wavelength enters in optical fiber for the light beam between 250 nanometers -280 nanometers, then
It passes sequentially through diaphragm and camera lens has been applied on photoresist later；Wherein since the spectral response range approximate range of photoresist is
180 nanometers -280 nanometers and 220 nanometers -450 nanometers two kinds, so when the wavelength on practical function to photoresist is received 250
When rice is between 280 nanometers, it will be able to while the photoresist of both the above response range is all played a role, i.e., it is received by 250
The light beam of -280 nano wave lengths of rice can meet the needs of Different lightwave is long simultaneously, thus reduce replacement to projective lens and
Selection not only increases processing efficiency, while but also operation is more simple.
Detailed description of the invention
Fig. 1 is the relation schematic diagram between the response factor and wavelength of light of a kind of photoresist；
Fig. 2 is the relation schematic diagram between the response factor and wavelength of light of another photoresist；
Fig. 3 is the Wavelength distribution figure of light beam in a kind of exposure method of one embodiment of the invention offer；
Fig. 4 is a kind of structural schematic diagram for edge exposure system that one embodiment of the invention provides；
Fig. 5 is the distribution schematic diagram of each microscope group in a kind of photoetching projection objective lens of one embodiment of the invention offer；
Fig. 6 is parameter corresponding to eyeglass in each microscope group in Fig. 5；
Fig. 7 is a kind of disc of confusion signal of the edge exposure camera lens for edge exposure system that one embodiment of the invention provides
Figure；
Fig. 8 is a kind of structural schematic diagram of the apertured substrate for edge exposure device that one embodiment of the invention provides；
Fig. 9 is a kind of structural schematic diagram of the diaphragm connector for edge exposure device that one embodiment of the invention provides；
Figure 10 is a kind of flow chart for exposure method that one embodiment of the invention provides.
Wherein, the first microscope group of 1-；The second microscope group of 2-；3- third microscope group；The 4th microscope group of 4-；The 5th microscope group of 5-；The 6th mirror of 6-
Group；7- apertured substrate；8- diaphragm connector.
Specific embodiment
Below in conjunction with the drawings and specific embodiments to photoetching projection objective lens proposed by the present invention, edge exposure system and edge
Exposure device is described in further detail.According to following explanation and claims, advantages and features of the invention will be become apparent from.
It should be noted that attached drawing is all made of very simplified form and using non-accurate ratio, only conveniently, lucidly to assist
Illustrate the purpose of the embodiment of the present invention.The same or similar appended drawing reference represents the same or similar component in attached drawing.
Attached drawing 1 and attached drawing 2 are respectively the relationship signal between the response factor and wavelength of light of photoresist in the prior art
Two examples of figure, wherein the light in Fig. 1 is mainly used for the photoresist that spectral response range is 180 nanometers -280 nanometers,
The light of Fig. 2 is mainly used for the photoresist that spectral response range is 220 nanometers -450 nanometers, and Fig. 3 is used in the present invention
The light distribution situation of light source.The present invention provides photoetching projection objective lens, edge exposure system and edge exposure devices, please refer to
Attached drawing 3 is to attached drawing 10, and which includes a kind of photoetching projection objective lens, the photoetching projection objective lens include the first microscope group 1, the second mirror
Group 2, third microscope group 3, the 4th microscope group 4, the 5th microscope group 5, the 6th microscope group 6, first microscope group 1, the second microscope group 2, third microscope group
3, the focal length satisfaction of the 4th microscope group 4, the 5th microscope group 5, the 6th microscope group 6:
0.05<f1/f<0.15；-0.32<f2/f<-0.22；0.08<f3/f<0.18；0.05<f4/f<0.15； -0.7<
f5/f<-0.5；0.06<f6/f<0.16；
Wherein, the total focal length of the photoetching projection objective lens is f, and the focal length of first microscope group 1 is f1, second microscope group
2 focal length is f2, and the focal length of the third microscope group 3 is f3, and the focal length of the 4th microscope group 4 is f4, the coke of the 5th microscope group 5
It is f6 away from the focal length for f5, the 6th microscope group 6.
The photoetching projection objective lens include at least six eyeglasses, and first microscope group 1 includes at least an eyeglass, and described the
Two microscope groups 2 include at least an eyeglass, and the third microscope group 3 includes at least an eyeglass, and the 4th microscope group 4 includes at least one
A eyeglass, the 5th microscope group 5 include at least an eyeglass, and the 6th microscope group 6 includes at least an eyeglass, it is preferred that this
Each microscope group contains an eyeglass in embodiment, naturally it is also possible to the eyeglass number for selecting other numbers according to the actual situation, than
Such as two panels or three pieces, wherein the material of six eyeglasses in the present embodiment is vitreous silica.
It preferably, further include having a diaphragm.The diaphragm is set between the third microscope group 3 and the 4th microscope group 4,
As shown in Fig. 5, diaphragm is located at a.
Preferably, the size of the f is 367 millimeters in the present embodiment, described f1, f2, f3, f4, f5, f6 and total coke
Ratio away from size between f are as follows:
F1/f=0.11, f2/f=-0.27, f3/f=0.13, f4/f=0.11, f5/f=-0.59, f6/f=0.11,
Certain f1, f2, f3, f4, f5, f6 are also possible to satisfaction 0.05 < f1/f < 0.15；-0.32<f2/f<-0.22； 0.08<f3/f<
0.18；0.05<f4/f<0.15；-0.7<f5/f<-0.5；Other focal lengths of 0.06 < f6/f < 0.16, do not describe one by one herein.
The present invention also provides a kind of edge exposure systems, including the as above any one photoetching projection objective lens, further include
Light source, light beam transfer module, diaphragm component and quartzy rod assembly, wherein quartzy rod assembly and photoetching projection objective lens pass through screw
It is connected and fixed an entirety, diaphragm component is individually fixed in the transmission adjusting seat of edge exposure machine.It is provided on the light source
Anti-reflection film, for being selected for 250 nanometers -280 nanometers of light wavelength, the light source issues light beam and passes through the light beam
Enter the photoetching projection objective lens after passing module, is provided with several diaphragms on the diaphragm component, the diaphragm component is used for
Several described diaphragms are loaded, and a diaphragm may be selected between the third microscope group 3 and the 4th microscope group 4, this
It is three that embodiment, which selects diaphragm number, is also possible to other numbers, wherein the bore size of different diaphragms is different, diaphragm group
Part further includes diaphragm connector 8 and apertured substrate 7, and three diaphragms are connect with the diaphragm connector 8, the diaphragm
Connector 8 is all connected in the connection of apertured substrate 7.Preferably, the light beam transfer module is that the 0.22NA of customization is ultraviolet
High transmittance optical fiber.
Wherein, the wave-length coverage of the light source is 220 nanometers~300 nanometers.Preferably, the wave-length coverage of the light source is
250 nanometers~280 nanometers, the present embodiment medium wavelength range takes 260 nanometers, can also choose wavelength according to the actual situation 250
Other light beams in nanometer~280 nanometer ranges.
The present invention also provides a kind of edge exposure devices, including the as above any one edge exposure system, further include
There are work stage module, control module and monitoring modular, the work stage module is for driving substrate activity and being exposed, institute
Detection module is stated for monitoring in real time to exposure process, the control module is used to receive the feedback of the detection module simultaneously
Work stage module is controlled, wherein substrate is preferably silicon wafer in the present embodiment.
The horizontal direction position of apertured substrate 7 passes through the convex table top of fixing seat and the side wall surface positioning of quartzy rod assembly, diaphragm
The vertical position of substrate 7 passes through screw locking positioning.It is benchmark face that diaphragm notch, which marks two adjacent surfaces, and two datum levels are tight when installation
The boss face and side wall surface for pasting diaphragm connector 8 connect diaphragm connector 8 and apertured substrate 7 by fastening screw and are by next
It can.The switching for completing different size diaphragms when executing edge exposure by control module control D axis movement, meets different exposure views
Field demand.
Work stage module include drive diaphragm component movement D axis, drive photoetching projection objective lens mass motion X/Y platform,
Drive the R axis of silicon slice rotating and lifting.Wherein D axis and X/Y platform are integral.When executing edge exposure, shine under control module
The location parameter of door screen and the location parameter of photoetching projection objective lens, corresponding D axis and X/Y platform move to designated position, under control module
It sends out acceleration and silicon chip edge exposure is completed in rotary speed parameter control R axis rotation.
Monitoring modular is an energy-probe, and the center line of exploration hole and photoetching projection objective lens is coaxial, is located at lithographic projection
The underface of object lens.When light source is closed, unglazed injection, energy-probe reading is Offset at this time；When light source is opened, there is light emission
Out, energy-probe reading is Calibration at this time, and light spot illumination can be measured by illumination photometer at optimal focal plane, if its value is
S, then it is S/ (Calibration-Offset) that energy-probe unit, which reads corresponding brightness value,.If certain moment in exposure process
Energy-probe reading is Value, then corresponding practical brightness value is S* (Value-Offset)/(Calibration-
Offset), to realize the real time monitoring to illumination in exposure process.
Control module is mainly made of computer hardware, operating system and edge exposure relative program, is device operator
The operating and controlling interface of member.By control module, operator, which can set relevant parameter, makes machine execute certain operation, and machine can incite somebody to action
Production information feeds back to operator person by control module, thus finishing man-machine interaction.
The present invention also provides a kind of edge exposure methods using edge exposure device as described above, as shown in Figure 10,
It at least includes the following steps: loading substrate to the work stage module, open the light source and issue exposing light beam, the exposure light
It is incident to the substrate after light beam transfer module, photoetching projection objective lens described in Shu Jing, realizes the edge exposure of the substrate.Certainly
It can also be according to the other step of exposure of increase in demand of actual exposure.
In conclusion photoetching projection objective lens provided by the invention, edge exposure system and edge exposure device, light source is issued
After ultraviolet light, it is that 250 nanometers -280 nanometers of light passes through that wavelength is made under the action of anti-reflection film, then passes sequentially through light
It is applied on edge bead after fine, diaphragm and photoetching projection objective lens, is received since the wavelength of light at this time is 250 nanometer -280
Rice, this makes it possible to receive between 180 nanometers -280 nanometers, while also at 220 nanometer -450 to due to this range simultaneously
Between rice, so photoetching can be carried out to the photoresist of different exposure demands simultaneously, in this way when actual exposure, it will be able to
It does not need the machine part of replacement exposure, i.e. exposure component and can directly be exposed, not only increase exposure efficiency, simultaneously
But also operation is more simple, it is practical.
Moreover, due to that can replace to different diaphragms on diaphragm component, this makes it possible to according to specific
Different diaphragms is selected to be exposed when needs, applicability is wide.
Wherein, when the ratio of size between f1, f2, f3, f4, f5, f6 and total focal length f are as follows:
F1/f=0.11, f2/f=-0.27, f3/f=0.13, f4/f=0.11, f5/f=-0.59, f6/f=0.11
When, edge exposure camera lens disc of confusion schematic diagram is as shown in fig. 7, it can be seen from the figure that optics penumbra≤0.25mm of exposure, exposes
Light quality is guaranteed.
It should be noted that each embodiment in this specification is described in a progressive manner, each embodiment emphasis is said
Bright is the difference from other embodiments, and the same or similar parts in each embodiment may refer to each other.
Foregoing description is only the description to present pre-ferred embodiments, not to any restriction of the scope of the invention, this hair
Any change, the modification that the those of ordinary skill in bright field does according to the disclosure above content, belong to the protection of claims
Range.
Claims (13)
1. a kind of photoetching projection objective lens, which is characterized in that the photoetching projection objective lens include the first microscope group, the second microscope group, third
Microscope group, the 4th microscope group, the 5th microscope group, the 6th microscope group, first microscope group, the second microscope group, third microscope group, the 4th microscope group, the 5th
Microscope group, the focal length satisfaction of the 6th microscope group:
0.05<f1/f<0.15；-0.32<f2/f<-0.22；0.08<f3/f<0.18；0.05<f4/f<0.15；-0.7<f5/f<-
0.5；0.06<f6/f<0.16；
Wherein, the total focal length of the photoetching projection objective lens is f, and the focal length of first microscope group is f1, the coke of second microscope group
It is f3 away from the focal length for f2, the third microscope group, the focal length of the 4th microscope group is f4, and the focal length of the 5th microscope group is f5,
The focal length of 6th microscope group is f6.
2. photoetching projection objective lens according to claim 1, which is characterized in that the photoetching projection objective lens include at least six
Eyeglass, first microscope group include at least an eyeglass, and second microscope group includes at least an eyeglass, and the third microscope group is extremely
It less include an eyeglass, the 4th microscope group includes at least an eyeglass, and the 5th microscope group includes at least an eyeglass, described
6th microscope group includes at least an eyeglass.
3. photoetching projection objective lens according to claim 2, which is characterized in that the material of at least six eyeglass is molten
Fused silica.
4. photoetching projection objective lens according to any one of claims 1 to 3, which is characterized in that further include having a diaphragm.
5. photoetching projection objective lens according to claim 4, which is characterized in that the diaphragm be set to the third microscope group with
Between 4th microscope group.
6. photoetching projection objective lens according to any one of claims 1 to 3, which is characterized in that the size of the f is 367 millis
Rice, the ratio of size between described f1, f2, f3, f4, f5, f6 and total focal length f are as follows:
F1/f=0.11, f2/f=-0.27, f3/f=0.13, f4/f=0.11, f5/f=-0.59, f6/f=0.11.
7. a kind of edge exposure system, which is characterized in that including the photoetching projection objective lens as described in any one of claim 1 to 6, also
Including light source and light beam transfer module, the light source issues light beam and enters the lithographic projection after the light beam transfer module
Object lens.
8. edge exposure system according to claim 7, which is characterized in that it further include having diaphragm component, the diaphragm group
Several diaphragms are provided on part, a diaphragm position may be selected for loading several described diaphragms in the diaphragm component
Between the third microscope group and the 4th microscope group.
9. edge exposure system according to claim 7, which is characterized in that the light beam transfer module is optical fiber.
10. edge exposure system according to claim 7, which is characterized in that the wave-length coverage of the light source is 220 nanometers
~300 nanometers.
11. edge exposure system according to claim 10, which is characterized in that the wave-length coverage of the light source is received for 250
Rice~280 nanometers.
12. a kind of edge exposure device, which is characterized in that including the edge exposure system as described in any one of claim 7 to 11,
It further include having work stage module, control module, monitoring modular, the work stage module is for driving substrate activity and being exposed
Light, the detection module is for monitoring exposure process in real time, and the control module is for receiving the detection module
It feeds back and work stage module is controlled.
13. a kind of edge exposure method using edge exposure device as claimed in claim 12, which is characterized in that include at least
Following steps: loading substrate to the work stage module, opens the light source and issues exposing light beam, described in the exposing light beam warp
It is incident to the substrate after light beam transfer module, photoetching projection objective lens, realizes the edge exposure of the substrate.
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| CN201711243395.8A CN109856915B (en) | 2017-11-30 | 2017-11-30 | Photoetching projection objective, edge exposure system and edge exposure device |
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|---|---|---|---|
| CN201711243395.8A CN109856915B (en) | 2017-11-30 | 2017-11-30 | Photoetching projection objective, edge exposure system and edge exposure device |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5159496A (en) * | 1990-04-04 | 1992-10-27 | Dainippon Screen Mfg. Co., Ltd. | Lens system with four meniscus lenses made of anomalous dispersion glass |
| US5903400A (en) * | 1996-08-08 | 1999-05-11 | Nikon Corporation | Projection-optical system for use in a projection-exposure apparatus |
| US6008884A (en) * | 1997-04-25 | 1999-12-28 | Nikon Corporation | Projection lens system and apparatus |
| KR100387148B1 (en) * | 1994-12-14 | 2003-06-18 | 가부시키가이샤 니콘 | Exposure Apparatus Having Projection Optical System |
| WO2005001543A1 (en) * | 2003-06-26 | 2005-01-06 | Nikon Corporation | Projection optical system, exposure system, and device production method |
| CN101216679A (en) * | 2007-12-28 | 2008-07-09 | 上海微电子装备有限公司 | Edge exposure device |
-
2017
- 2017-11-30 CN CN201711243395.8A patent/CN109856915B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5159496A (en) * | 1990-04-04 | 1992-10-27 | Dainippon Screen Mfg. Co., Ltd. | Lens system with four meniscus lenses made of anomalous dispersion glass |
| KR100387148B1 (en) * | 1994-12-14 | 2003-06-18 | 가부시키가이샤 니콘 | Exposure Apparatus Having Projection Optical System |
| US5903400A (en) * | 1996-08-08 | 1999-05-11 | Nikon Corporation | Projection-optical system for use in a projection-exposure apparatus |
| US6008884A (en) * | 1997-04-25 | 1999-12-28 | Nikon Corporation | Projection lens system and apparatus |
| WO2005001543A1 (en) * | 2003-06-26 | 2005-01-06 | Nikon Corporation | Projection optical system, exposure system, and device production method |
| CN101216679A (en) * | 2007-12-28 | 2008-07-09 | 上海微电子装备有限公司 | Edge exposure device |
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| Publication number | Publication date |
|---|---|
| CN109856915B (en) | 2020-07-14 |
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