CN109856915B - Photoetching projection objective, edge exposure system and edge exposure device - Google Patents
Photoetching projection objective, edge exposure system and edge exposure device Download PDFInfo
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- CN109856915B CN109856915B CN201711243395.8A CN201711243395A CN109856915B CN 109856915 B CN109856915 B CN 109856915B CN 201711243395 A CN201711243395 A CN 201711243395A CN 109856915 B CN109856915 B CN 109856915B
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Abstract
The invention provides a photoetching projection objective which comprises a first lens group, a second lens group, a third lens group, a fourth lens group, a fifth lens group and a sixth lens group, wherein the focal lengths of the first lens group, the second lens group, the third lens group, the fourth lens group, the fifth lens group and the sixth lens group meet the following requirements: 0.05< f1/f < 0.15; -0.32< f2/f < -0.22; 0.08< f3/f < 0.18; 0.05< f4/f < 0.15; -0.7< f5/f < -0.5; 0.06< f6/f < 0.16; the total focal length of the photoetching projection objective lens is f, the focal length of the first lens group is f1, the focal length of the second lens group is f2, the focal length of the third lens group is f3, the focal length of the fourth lens group is f4, the focal length of the fifth lens group is f5, and the focal length of the sixth lens group is f 6. The photoetching projection objective lens provided by the invention can be operated simply.
Description
Technical Field
The invention belongs to the technical field of photoetching exposure, and relates to a photoetching projection objective lens, an edge exposure system and an edge exposure device.
Background
The exposure of the edge of the silicon wafer is an important process link for manufacturing an IC circuit, and photoresist on the surface of the silicon wafer is exposed by using ultraviolet light to generate chemical change and is developed to complete the photoresist removing treatment of the edge of the silicon wafer.
However, because the spectral response ranges of the photoresists used in different processes are different, different exposure lenses need to be selected for exposure according to specific photoresists during processing, and the actual operation is complicated.
Disclosure of Invention
The invention aims to provide a photoetching projection objective lens, an edge exposure system and an edge exposure device, and aims to solve the problem of complex operation caused by the fact that different exposure lenses are required to be selected for exposure according to specific photoresist in the prior art.
In order to solve the above technical problem, the present invention provides a lithography projection objective lens, which comprises a first lens group, a second lens group, a third lens group, a fourth lens group, a fifth lens group and a sixth lens group, wherein the focal lengths of the first lens group, the second lens group, the third lens group, the fourth lens group, the fifth lens group and the sixth lens group satisfy:
0.05<f1/f<0.15；-0.32<f2/f<-0.22；0.08<f3/f<0.18；0.05<f4/f<0.15；-0.7<f5/f<-0.5；0.06<f6/f<0.16；
the total focal length of the photoetching projection objective lens is f, the focal length of the first lens group is f1, the focal length of the second lens group is f2, the focal length of the third lens group is f3, the focal length of the fourth lens group is f4, the focal length of the fifth lens group is f5, and the focal length of the sixth lens group is f 6.
The invention is further arranged that the lithographic projection objective comprises at least six lenses, the first lens group comprises at least one lens, the second lens group comprises at least one lens, the third lens group comprises at least one lens, the fourth lens group comprises at least one lens, the fifth lens group comprises at least one lens, and the sixth lens group comprises at least one lens.
The invention further provides that the material of the at least six lenses is fused quartz.
The invention is further provided with a diaphragm.
The invention is further arranged that the diaphragm is arranged between the third lens group and the fourth lens group.
The invention is further provided that the size of f is 367 mm, and the ratio of the sizes of f1, f2, f3, f4, f5, f6 to the total focal length f is as follows:
f1/f＝0.11，f2/f＝-0.27，f3/f＝0.13，f4/f＝0.11，f5/f＝-0.59，f6/f＝0.11。
the invention also provides an edge exposure system, which comprises the photoetching projection objective lens, a light source and a light beam transmission module, wherein light beams emitted by the light source enter the photoetching projection objective lens after passing through the light beam transmission module.
The invention is further provided with a diaphragm assembly, wherein a plurality of diaphragms are arranged on the diaphragm assembly, the diaphragm assembly is used for loading the plurality of diaphragms, and one diaphragm can be selected to be positioned between the third lens group and the fourth lens group.
The invention is further configured that the beam delivery module is an optical fiber.
The invention is further arranged that the wavelength range of the light source is 220 nm to 300 nm.
The invention is further configured such that the light source has a wavelength in the range of 250 nm to 280 nm.
The invention also provides an edge exposure device, which comprises the edge exposure system, a workpiece table module, a control module and a monitoring module, wherein the workpiece table module is used for driving the substrate to move and expose, the detection module is used for monitoring the exposure process in real time, and the control module is used for receiving the feedback of the detection module and controlling the workpiece table module.
The invention also provides an edge exposure method using the edge exposure device, which at least comprises the following steps: and loading a substrate to the workpiece table module, starting the light source to emit an exposure beam, and enabling the exposure beam to enter the substrate after passing through the beam transfer module and the photoetching projection objective so as to realize edge exposure of the substrate.
Compared with the prior art, the invention provides a photoetching projection objective, an edge exposure system and an edge exposure device, after a light source emits light beams, the light beams with the wavelength of 250-280 nanometers enter an optical fiber through selection, and then the light beams sequentially pass through a diaphragm and a lens and then act on a photoresist; the spectral response ranges of the photoresist are approximately 180 nm-280 nm and 220 nm-450 nm, so that when the wavelength actually applied to the photoresist is between 250 nm and 280 nm, the photoresist in the two response ranges can be simultaneously acted, namely, the light beams with the wavelengths of 250 nm-280 nm can simultaneously meet the requirements of different light wavelengths, so that the replacement and selection of the photoetching lens are reduced, the processing efficiency is improved, and the operation is simpler.
Drawings
FIG. 1 is a diagram illustrating the relationship between the response factor of a photoresist and the wavelength of light;
FIG. 2 is a graph showing the relationship between the response factor and the wavelength of light for another photoresist;
FIG. 3 is a diagram illustrating a wavelength distribution of a light beam in an exposure method according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of an edge exposure system according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of the distribution of lens groups in a lithographic projection objective according to an embodiment of the present invention;
FIG. 6 is a diagram illustrating parameters corresponding to lenses in each of the lens groups shown in FIG. 5;
fig. 7 is a schematic diagram of a diffuse spot of an edge exposure lens of an edge exposure system according to an embodiment of the present invention;
FIG. 8 is a schematic structural diagram of a diaphragm substrate of an edge exposure apparatus according to an embodiment of the present invention;
FIG. 9 is a schematic structural diagram of a diaphragm connecting member of an edge exposure apparatus according to an embodiment of the present invention;
fig. 10 is a flowchart of an exposure method according to an embodiment of the invention.
Wherein, 1-the first lens group; 2-a second lens group; 3-a third lens group; 4-a fourth lens group; 5-a fifth lens group; 6-sixth lens group; 7-a diaphragm substrate; 8-diaphragm connecting piece.
Detailed Description
The lithography projection objective, the edge exposure system and the edge exposure apparatus according to the present invention will be described in further detail with reference to the accompanying drawings and specific embodiments. Advantages and features of the present invention will become apparent from the following description and from the claims. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present invention. The same or similar reference numbers in the drawings identify the same or similar elements.
Fig. 1 and fig. 2 are two examples of the relationship between the response factor and the wavelength of light of the photoresist in the prior art, respectively, wherein the light in fig. 1 is mainly used for the photoresist with the spectral response range of 180 nm to 280 nm, the light in fig. 2 is mainly used for the photoresist with the spectral response range of 220 nm to 450 nm, and fig. 3 is the light distribution of the light source used in the present invention. The invention provides a photoetching projection objective, an edge exposure system and an edge exposure device, referring to the attached drawings 3-10, wherein the photoetching projection objective comprises a first lens group 1, a second lens group 2, a third lens group 3, a fourth lens group 4, a fifth lens group 5 and a sixth lens group 6, and the focal lengths of the first lens group 1, the second lens group 2, the third lens group 3, the fourth lens group 4, the fifth lens group 5 and the sixth lens group 6 satisfy that:
0.05<f1/f<0.15；-0.32<f2/f<-0.22；0.08<f3/f<0.18；0.05<f4/f<0.15；-0.7<f5/f<-0.5；0.06<f6/f<0.16；
the total focal length of the objective lens for lithography projection is f, the focal length of the first lens group 1 is f1, the focal length of the second lens group 2 is f2, the focal length of the third lens group 3 is f3, the focal length of the fourth lens group 4 is f4, the focal length of the fifth lens group 5 is f5, and the focal length of the sixth lens group 6 is f 6.
The objective lens for lithography projection includes at least six lenses, the first lens group 1 includes at least one lens, the second lens group 2 includes at least one lens, the third lens group 3 includes at least one lens, the fourth lens group 4 includes at least one lens, the fifth lens group 5 includes at least one lens, and the sixth lens group 6 includes at least one lens, preferably, each lens group in this embodiment includes one lens, and certainly, other numbers of lenses, such as two or three lenses, may be selected according to actual situations, where the six lenses in this embodiment are made of fused silica.
Preferably, a diaphragm is further included. The diaphragm is disposed between the third lens group 3 and the fourth lens group 4, as shown in fig. 5, the diaphragm is located at a.
Preferably, in the present embodiment, the size of f is 367 mm, and the ratio of the sizes of f1, f2, f3, f4, f5, f6 to the total focal length f is:
f1/f is 0.11, f2/f is-0.27, f3/f is 0.13, f4/f is 0.11, f5/f is-0.59, f6/f is 0.11, and f1, f2, f3, f4, f5 and f6 may satisfy 0.05< f1/f < 0.15; -0.32< f2/f < -0.22; 0.08< f3/f < 0.18; 0.05< f4/f < 0.15; -0.7< f5/f < -0.5; other focal lengths of 0.06< f6/f <0.16, not to be described herein.
The invention also provides an edge exposure system, which comprises the photoetching projection objective lens, a light source, a light beam transmission module, a diaphragm assembly and a quartz rod assembly, wherein the quartz rod assembly and the photoetching projection objective lens are connected and fixed into a whole through screws, and the diaphragm assembly is independently fixed on a transmission adjusting seat of the edge exposure machine. Be provided with the antireflection coating on the light source for light that the wavelength is 250 nanometers-280 nanometers is selected, the light source sends the light beam warp get into behind the light beam transmission module photoetching projection objective, be provided with a plurality of diaphragm on the diaphragm subassembly, the diaphragm subassembly is used for loading a plurality of diaphragm, and the alternative diaphragm is located third mirror group 3 with between the fourth mirror group 4, the diaphragm number is three for this embodiment, also can be other numbers, and wherein the trompil size of different diaphragms is different, and the diaphragm subassembly still includes diaphragm connecting piece 8 and diaphragm base plate 7, and is three the diaphragm all with diaphragm connecting piece 8 is connected, diaphragm connecting piece 8 all connect in diaphragm base plate 7 is connected. Preferably, the light beam transmission module is a customized 0.22NA ultraviolet high-transmittance optical fiber.
Wherein the wavelength range of the light source is 220-300 nanometers. Preferably, the wavelength range of the light source is 250 nm to 280 nm, the wavelength range in this embodiment is 260 nm, and other light beams with wavelengths in the range of 250 nm to 280 nm may also be selected according to actual situations.
The invention also provides an edge exposure device, which comprises the edge exposure system, a workpiece stage module, a control module and a monitoring module, wherein the workpiece stage module is used for driving the substrate to move and carry out exposure, the detection module is used for carrying out real-time monitoring on the exposure process, the control module is used for receiving the feedback of the detection module and controlling the workpiece stage module, and the substrate is preferably a silicon wafer in the embodiment.
The horizontal position of the diaphragm substrate 7 is positioned through the convex table surface and the side wall surface on the fixed seat of the quartz rod assembly, and the vertical position of the diaphragm substrate 7 is locked and positioned through a screw. Two adjacent surfaces of the diaphragm gap mark are reference surfaces, the two reference surfaces are tightly attached to the convex table surface and the side wall surface of the diaphragm connecting piece 8 during installation, and the diaphragm connecting piece 8 and the diaphragm substrate 7 are connected through fastening screws after the two reference surfaces are tightly attached. When the edge exposure is executed, the control module controls the D-axis to move to complete the switching of the diaphragms with different sizes, and the requirements of different exposure fields are met.
The workpiece stage module comprises a D shaft for driving the diaphragm assembly to move, an X/Y stage for driving the photoetching projection objective to integrally move, and an R shaft for driving the silicon wafer to rotate and lift. Wherein the D-axis and the X/Y stage are integral. When edge exposure is executed, the control module issues position parameters of a diaphragm and position parameters of a photoetching projection objective lens, the corresponding D axis and the X/Y table move to the designated positions, and the control module issues acceleration and rotation speed parameters to control the R axis to rotate so as to complete edge exposure of the silicon wafer.
The monitoring module is an energy detector, and the detection hole is coaxial with the central line of the photoetching projection objective and is positioned right below the photoetching projection objective. When the light source is turned off, no light is emitted, and the reading of the energy detector is Offset; when the light source is turned on, light is emitted, the reading of the energy detector is Calibration, the illumination of the light spot at the optimal focal plane can be measured by the illuminometer, and the illumination value corresponding to the unit reading of the energy detector is S/(Calibration-Offset) if the value is S. And if the reading of the energy detector at a certain moment in the exposure process is Value, the corresponding actual illumination Value is S (Value-Offset)/(Calibration-Offset), so that the illumination in the exposure process is monitored in real time.
The control module mainly comprises computer hardware, an operating system and an edge exposure related program, and is an operation interface for an equipment operator. Through the control module, an operator can set related parameters to enable the machine to execute certain operation, and the machine can feed production information back to the operator through the control module, so that man-machine interaction is completed.
The invention also provides an edge exposure method using the edge exposure device, as shown in fig. 10, which at least comprises the following steps: and loading a substrate to the workpiece table module, starting the light source to emit an exposure beam, and enabling the exposure beam to enter the substrate after passing through the beam transfer module and the photoetching projection objective so as to realize edge exposure of the substrate. Of course, other exposure steps may be added depending on the actual exposure requirements.
In summary, according to the lithography projection objective, the edge exposure system and the edge exposure apparatus provided by the present invention, after the light source emits the ultraviolet light, the light with the wavelength of 250 nm to 280 nm passes through under the action of the antireflection film, and then the light passes through the optical fiber, the diaphragm and the lithography projection objective in sequence and then acts on the edge photoresist, since the wavelength of the light is 250 nm to 280 nm, the photoresist with different exposure requirements can be simultaneously subjected to lithography because the wavelength is in the range of 180 nm to 280 nm and also in the range of 220 nm to 450 nm, so that the actual exposure can be directly performed without replacing the exposure machine component, i.e., the exposure component, thereby improving the exposure efficiency, and simultaneously making the operation simpler and the practicability strong.
Moreover, because can change different diaphragms on the diaphragm subassembly, just so can choose different diaphragms for use to expose according to specific needs, extensive applicability.
When the ratio of f1, f2, f3, f4, f5, f6 to the total focal length f is:
when f1/f is 0.11, f2/f is-0.27, f3/f is 0.13, f4/f is 0.11, f5/f is-0.59, and f6/f is 0.11, the schematic diagram of the speckle of the edge exposure lens is shown in fig. 7, and it can be seen from the figure that the optical penumbra of the exposure is less than or equal to 0.25mm, and the exposure quality is ensured.
It should be noted that, in the present specification, the embodiments are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments may be referred to each other.
The above description is only for the purpose of describing the preferred embodiments of the present invention, and is not intended to limit the scope of the present invention, and any variations and modifications made by those skilled in the art based on the above disclosure are within the scope of the appended claims.
Claims (13)
1. The utility model provides a photoetching projection objective which characterized in that, photoetching projection objective includes first mirror group, second mirror group, third mirror group, fourth mirror group, fifth mirror group, sixth mirror group, the focus of first mirror group, second mirror group, third mirror group, fourth mirror group, fifth mirror group, sixth mirror group satisfies:
0.05<f1/f<0.15；-0.32<f2/f<-0.22；0.08<f3/f<0.18；0.05<f4/f<0.15；-0.7<f5/f<-0.5；0.06<f6/f<0.16；
the total focal length of the photoetching projection objective lens is f, the focal length of the first lens group is f1, the focal length of the second lens group is f2, the focal length of the third lens group is f3, the focal length of the fourth lens group is f4, the focal length of the fifth lens group is f5, and the focal length of the sixth lens group is f 6.
2. Lithography projection objective according to claim 1, wherein the lithography projection objective comprises at least six mirror plates, the first mirror group comprising at least one mirror plate, the second mirror group comprising at least one mirror plate, the third mirror group comprising at least one mirror plate, the fourth mirror group comprising at least one mirror plate, the fifth mirror group comprising at least one mirror plate and the sixth mirror group comprising at least one mirror plate.
3. Lithography projection objective according to claim 2, characterized in that the material of the at least six lenses is fused silica.
4. Lithography projection objective according to one of the claims 1 to 3, further comprising an aperture stop.
5. Lithography projection objective according to claim 4, wherein the optical stop is arranged between the third lens group and the fourth lens group.
6. Lithography projection objective according to one of claims 1 to 3, characterized in that the size of f is 367 millimeters, the ratio of the sizes between f1, f2, f3, f4, f5, f6 and the total focal length f being:
f1/f＝0.11，f2/f＝-0.27，f3/f＝0.13，f4/f＝0.11，f5/f＝-0.59，f6/f＝0.11。
7. an edge exposure system, comprising the lithography projection objective according to any one of claims 1 to 6, further comprising a light source and a light beam transfer module, wherein the light beam emitted by the light source enters the lithography projection objective after passing through the light beam transfer module, and the wavelength of the light beam entering the light beam transfer module is in the range of 250 nm to 280 nm.
8. The edge exposure system of claim 7, further comprising a plurality of diaphragms disposed on the diaphragm assembly, wherein the diaphragm assembly is configured to load the plurality of diaphragms and select one of the diaphragms to be located between the third lens group and the fourth lens group.
9. The edge exposure system of claim 7, wherein the beam delivery module is an optical fiber.
10. The edge exposure system of claim 7, wherein the light source has a wavelength in a range of 220 nm to 300 nm.
11. The edge exposure system of claim 10, wherein the light source has a wavelength in a range from 250 nanometers to 280 nanometers.
12. An edge exposure apparatus, comprising the edge exposure system according to any one of claims 7 to 11, further comprising a stage module, a control module, and a monitoring module, wherein the stage module is configured to move the substrate and perform exposure, the monitoring module is configured to perform real-time monitoring on the exposure process, and the control module is configured to receive feedback from the monitoring module and control the stage module.
13. An edge exposure method using the edge exposure apparatus according to claim 12, comprising at least the steps of: and loading a substrate to the workpiece table module, starting the light source to emit an exposure beam, and enabling the exposure beam to enter the substrate after passing through the beam transfer module and the photoetching projection objective so as to realize edge exposure of the substrate.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5159496A (en) * | 1990-04-04 | 1992-10-27 | Dainippon Screen Mfg. Co., Ltd. | Lens system with four meniscus lenses made of anomalous dispersion glass |
| US5903400A (en) * | 1996-08-08 | 1999-05-11 | Nikon Corporation | Projection-optical system for use in a projection-exposure apparatus |
| US6008884A (en) * | 1997-04-25 | 1999-12-28 | Nikon Corporation | Projection lens system and apparatus |
| KR100387148B1 (en) * | 1994-12-14 | 2003-06-18 | 가부시키가이샤 니콘 | Exposure Apparatus Having Projection Optical System |
| CN101216679A (en) * | 2007-12-28 | 2008-07-09 | 上海微电子装备有限公司 | Edge exposure device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005017734A (en) * | 2003-06-26 | 2005-01-20 | Nikon Corp | Projecting optical system, exposure unit, and device manufacturing method |
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- 2017-11-30 CN CN201711243395.8A patent/CN109856915B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5159496A (en) * | 1990-04-04 | 1992-10-27 | Dainippon Screen Mfg. Co., Ltd. | Lens system with four meniscus lenses made of anomalous dispersion glass |
| KR100387148B1 (en) * | 1994-12-14 | 2003-06-18 | 가부시키가이샤 니콘 | Exposure Apparatus Having Projection Optical System |
| US5903400A (en) * | 1996-08-08 | 1999-05-11 | Nikon Corporation | Projection-optical system for use in a projection-exposure apparatus |
| US6008884A (en) * | 1997-04-25 | 1999-12-28 | Nikon Corporation | Projection lens system and apparatus |
| CN101216679A (en) * | 2007-12-28 | 2008-07-09 | 上海微电子装备有限公司 | Edge exposure device |
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