WO2004086480A1 - Procede de purification d'un appareil de traitement au plasma et appareil de traitement au plasma - Google Patents

Procede de purification d'un appareil de traitement au plasma et appareil de traitement au plasma Download PDF

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Publication number
WO2004086480A1
WO2004086480A1 PCT/JP2004/004016 JP2004004016W WO2004086480A1 WO 2004086480 A1 WO2004086480 A1 WO 2004086480A1 JP 2004004016 W JP2004004016 W JP 2004004016W WO 2004086480 A1 WO2004086480 A1 WO 2004086480A1
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WO
WIPO (PCT)
Prior art keywords
processing
plasma
gas
oxygen
hydrogen
Prior art date
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PCT/JP2004/004016
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English (en)
Japanese (ja)
Inventor
Hiraku Ishikawa
Kohei Kawamura
Yasuo Kobayashi
Original Assignee
Tokyo Electron Limited
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Filing date
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Publication of WO2004086480A1 publication Critical patent/WO2004086480A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching

Definitions

  • the present invention relates to a plasma processing apparatus cleaning method and a plasma processing apparatus.
  • the present invention relates to a cleaning method for removing a fluorine-added carbon film adhered inside a processing vessel of a plasma processing apparatus, and a plasma processing apparatus having a cleaning function.
  • Copper wiring is mainly used as the wiring pattern for integrated circuits, and a fluorine-added carbon film (hereinafter referred to as “CF film”) with a low dielectric constant attracts attention as an interlayer insulating film to insulate it.
  • This CF film is placed on a mounting table by, for example, converting a processing gas containing carbon (C) and fluorine (F) into a plasma in a plasma processing apparatus capable of converting the processing gas into plasma in a vacuum container.
  • a film is formed on the surface of the formed substrate.
  • the CF film adheres to the wall surface of the vacuum vessel and the vicinity of the mounting table, and the film formation process proceeds.
  • the adhered film is peeled off. Therefore, after performing the film forming process a predetermined number of times, a predetermined cleaning is performed to remove these adhered films.
  • this cleaning is performed by converting oxygen (O 2 ) gas into plasma in a vacuum vessel and reacting the oxygen plasma with the deposited film.
  • oxygen O 2
  • this method although the CF film adhering to the vessel is removed, a phenomenon occurs in which another organic substance adheres to the vacuum vessel.
  • the new deposits are carboxyl groups (one COO), ketones
  • An organic substance with a bond such as a group (one CO), which has a strong oxidizing power of oxygen plasma during cleaning. It breaks the bond between carbon and fluorine in the CF film, and the carbon bond formed by this breaks. It is generated by the binding of oxygen to the hands and remains as organic matter without evaporating.
  • the organic matter containing carbon and oxygen adheres to the inner wall of the vacuum vessel in this way, the oxygen contained in the organic matter will be scattered into the gas phase during the next film forming process, and the cause of the particles may be reduced. It may cause the film to be etched, exert an etching action, or form an oxygen-bonded film, thereby deteriorating the film quality of the obtained film. Therefore, removal of the organic matter is being studied. At this time, a method of suppressing the generation of the organic substance by weakening the oxidizing power of oxygen plasma is considered. Are considering.
  • the oxygen gas and the hydrogen gas are simultaneously supplied into the processing chamber to generate plasma by the above-described conventional technique, and the carbon fluoride-based deposits are removed, the oxygen plasma and the oxygen plasma are generated in the processing chamber.
  • Hydrogen plasma At the same time, the oxidizing power of the oxygen plasma is hindered by the reducing power of the hydrogen plasma during the cleaning of the fluorocarbon-based deposits, and the cleaning (etching) effect of the oxygen plasma is weakened. It will be small.
  • the reducing power of the hydrogen plasma directly affects the oxidizing power of the oxygen plasma during the above-described cleaning, it includes C and ⁇ generated when the CF film is cleaned by the oxygen plasma.
  • the reducing power of hydrogen plasma is weakened, and the organic substances are decomposed to some extent but remain in large quantities without being decomposed.
  • the present invention has been made under such circumstances, and its purpose is to remove the fluoridated carbon film adhered to the inside of the processing vessel by first decomposing the fluoridated carbon film with oxygen plasma and then hydrogen By decomposing organic substances containing carbon and oxygen generated during the decomposition of the fluorinated carbon film by the above-mentioned plasma, the deposits in the processing vessel can be reliably removed without lowering the cleaning speed.
  • the present invention relates to a method for cleaning a plasma processing apparatus that converts a processing gas containing carbon and fluorine into a plasma in a processing vessel and performs a predetermined processing on a substrate.
  • a hydrogen plasma is generated in the processing vessel, and a second tallying step of decomposing an organic substance containing carbon and oxygen in the processing vessel with the plasma is provided. ing.
  • the plasma processing apparatus guides microwaves to a flat waveguide having a large number of slots formed on one surface thereof, and radiates a microphone mouth wave from the slots by guiding the microwaves to a surface having the slots formed therein.
  • the use of a configuration in which the plasma is generated by using this method is effective because a plasma with a high electron density can be generated.
  • the method of the present invention is, for example, a plasma processing apparatus in which a processing gas containing carbon and fluorine is converted into plasma in a processing vessel to perform a predetermined processing on a substrate.
  • a substrate processing unit for supplying the processing gas to the processing container to convert the processing gas into plasma and performing a predetermined processing on the substrate; an oxygen gas, an argon gas, and a helium gas in the processing container; And supplying an inert gas selected from neon gas, talipton gas, and xenon gas to convert the oxygen gas and the inert gas into plasma, and decompose the fluorine-added carbon film adhered to the processing container by the oxygen plasma.
  • a hydrogen gas and an inert gas selected from argon gas, helium gas, neon gas, krypton gas, and xenon gas are supplied to the processing container, and the hydrogen gas and the inert gas are turned into plasma to form the hydrogen plasma.
  • oxygen is introduced into the processing container.
  • the oxygen plasma processing performing means and the hydrogen plasma processing performing means such that a gas is supplied to perform the processing by the oxygen plasma, and then a hydrogen gas is supplied into the processing container to perform the processing by the hydrogen plasma.
  • the control is performed by a plasma processing device, which includes a control unit for controlling and a control unit.
  • oxygen plasma is generated in the processing vessel in the first cleaning step to remove the fluorine-added carbon film. Decompose completely.
  • most of the fluorine and carbon, which are the decomposition products of the fluorine-added carbon film are discharged to the outside of the device and removed, and part of the carbon reacts with the oxygen plasma to produce organic substances containing carbon and oxygen. I do.
  • the organic matter is decomposed by generating hydrogen plasma in the processing vessel, and carbon and oxygen, which are decomposition products at this time, are discharged to the outside of the apparatus. Remove.
  • the fluorine-added carbon film is completely decomposed by oxygen plasma in the first cleaning step, and then the first cleaning step is performed in the second cleaning step. Since the organic matter generated in step (1) is decomposed and removed by hydrogen plasma, the cleaning inside the processing vessel can be performed efficiently without lowering the tarnishing speed.
  • FIG. 1 is a cross-sectional view showing an overall configuration of an embodiment of a plasma processing apparatus to which the present invention is applied.
  • FIG. 2 is a plan view showing a part of a second gas supply unit provided in the plasma processing apparatus of FIG.
  • FIG. 3 is a perspective view showing an antenna unit provided in the plasma processing apparatus of FIG.
  • FIG. 4 is a process chart for explaining the method of the present invention.
  • reference numeral 1 denotes, for example, a processing vessel composed of a vacuum vessel formed entirely in a cylindrical shape.
  • the side wall and bottom of the processing vessel 1 are composed of a conductor, for example, an aluminum alloy, and the inner wall has For example, a protective film made of aluminum oxide is formed.
  • a mounting table 11 for mounting a substrate, for example, a semiconductor wafer (hereinafter referred to as a wafer) is provided substantially at the center of the processing chamber 1.
  • the mounting table 1 for example, aluminum nitride (A 1 N) Moshiku consists Ri by the oxidation Aruminiu beam (A 1 2 0 3), the heater have been found provided (not shown) therein, mounting surface It is configured as an electrostatic chuck.
  • the mounting table 11 is connected to a high frequency power supply for bias 12 having a frequency of, for example, 13.56 MHz.
  • the ceiling of the processing vessel 1 is open, and this section is opposed to the mounting table 11 via a sealing member (not shown) such as an o-ring.
  • a first gas supply unit 2 configured as described above is provided.
  • the gas supply unit 2 is configured Ri by the example A 1 2 O 3, ⁇ base 1 1 and the opposing first gas supply holes 2 1 The surface number of the is formed.
  • a gas flow path 22 communicating with one end of the gas supply hole 21 is formed in the gas supply section 2, and one end of the first gas supply path 23 is connected to the gas flow path 22.
  • the other end of the first gas supply path 23 is plasma gas such as argon (Ar) gas, helium (He) gas, krypton (Kr) gas, or neon (Ne) gas. , Xenon (Xe) gas, etc.
  • a click leaning gas oxygen ( ⁇ 2) gas Suya, hydrogen (H 2) is supplied source 2 5, 2 6 and respectively connected to gas, of these
  • the gas is sequentially supplied to the gas flow path 22 through the first gas supply path 23, and is uniformly supplied to the space below the first gas supply section 2 through the gas supply hole 21. Can be supplied.
  • the processing vessel 1 is provided between the mounting table 11 and the first gas supply unit 2, for example, a second gas having a substantially circular planar shape so as to partition between them.
  • a supply unit 3 is provided.
  • the second gas supply unit 3 is made of, for example, a conductor such as aluminum (A1) alloy containing magnesium (Mg) or stainless steel with A1 addition.
  • the second gas supply hole 31 is formed.
  • a grid-like gas flow path 32 communicating with one end of the gas supply hole 31 is formed inside the gas supply section 3, for example, as shown in FIGS. 1 and 2, a grid-like gas flow path 32 communicating with one end of the gas supply hole 31 is formed.
  • One end of the second gas supply path 33 is connected to the flow path 32.
  • the second gas supply section 3 is formed with a number of openings 34 so as to penetrate the gas supply section 3.
  • the openings 34 are for allowing the plasma and the processing gas in the plasma to pass through the space below the gas supply unit 3.
  • the openings 34 are formed between adjacent gas channels 32. I have.
  • the second gas supply section 3 is connected to a processing gas containing carbon and fluorine, for example, a C 5 F 8 gas supply source 35 via a second gas supply path 33.
  • the gas sequentially flows into the gas flow path 32 via the second gas supply path 33, and flows into the space below the second gas supply section 3 via the gas supply hole 31.
  • V1 to V4 are flow control valves provided on each supply line. These flow control valves are configured by combining an open / close valve and a flow control unit. The opening and closing of these valves V 1 to V 4 and the control of the flow rate are performed by the control unit C.
  • the antenna part 4 has a flat antenna body 41 having a circular planar shape and an opening on the lower surface side, and a flat antenna body 41 having an opening on the lower surface side.
  • the antenna body 41 and the slot plate 42 are provided with a disk-shaped slot plate 42 on which a number of slots are formed.
  • the antenna body 41 and the slot plate 42 are made of copper (Cu) or aluminum (A1). ), Which form a flat hollow circular waveguide.
  • a slow wave plate 43 made of a material is provided between the slot plate 4 2 and the antenna body 4 1, for example, A 1 2 O 3 and oxide Kei element (S i 0 2), a low-loss dielectric such as nitride Kei element (S i 3 N 4)
  • a slow wave plate 43 made of a material is provided.
  • the slow wave plate 43 is for shortening the wavelength of the microwave to shorten the guide wavelength in the waveguide.
  • a radial line slot antenna is composed of the antenna body 41, the slot plate 42, and the slow wave plate 43.
  • the antenna unit 4 configured as described above is mounted on the processing container 1 via a sealing member (not shown) so that the slot plate 42 is in close contact with the cover plate 13.
  • the antenna section 4 is connected to an external microwave generating means 45 via a coaxial waveguide 44, and for example, a microwave having a frequency of 2.45 GHz or 8.3 GHz is supplied. It's eel.
  • the outer waveguide 44 A of the coaxial waveguide 44 is connected to the antenna body 41, and the center conductor 44 B is inserted through the opening formed in the slow wave plate 43. It is connected to the cutout plate 42.
  • the slot plate 42 has a large number of slots 46 for generating, for example, circularly polarized waves.
  • This slot 46 is slightly separated in a substantially T shape.
  • a pair of slots 46a and 46b arranged as a pair is formed as a set, for example, in a concentric or spiral shape.
  • the micro wave is transmitted from the slot plate 42. Emitted as a nearly plane wave.
  • the slots 46a and the slots 46b are arranged so as to be substantially orthogonal to each other, a circularly polarized wave including two orthogonally polarized components is emitted.
  • the antenna section 4 includes a cooling block 5 in which a cooling water flow path 51 is formed, and the heat stored in the first gas supply section 2 by the cooling block 5 is transmitted to the antenna section. 4 to be absorbed.
  • an exhaust port 14 connected to a vacuum pump (not shown) is provided at the bottom of the processing vessel 1, so that the inside of the processing vessel 1 can be evacuated to a predetermined pressure as required.
  • FIG. 4 (a) which is the processing step of the present invention
  • a wafer W having copper wiring formed on the surface for example, is placed in a processing vessel 1 via a gate pulp (not shown). Carry in and place it on the mounting table 1 1. Subsequently, the inside of the processing vessel 1 is evacuated to a predetermined pressure, the valve V 1 is opened, and a plasma gas, for example, Ar gas is supplied to the first gas supply section 2 through the first gas supply path 23.
  • a plasma gas for example, Ar gas is supplied to the first gas supply section 2 through the first gas supply path 23.
  • a processing gas for example, C 5 F 8 gas is supplied to the second gas supply section 3 through the second gas supply path 33 at a predetermined flow rate.
  • a processing gas for example, C 5 F 8 gas is supplied to the second gas supply section 3 through the second gas supply path 33 at a predetermined flow rate.
  • supplied at 150 sccm For example, the inside of the processing vessel 1 is maintained at a process pressure of 7 Pa, and a bias voltage of 13.56 MHz and 200 W or less is applied to the mounting table 11. Set the surface temperature to 350 ° C.
  • microwave generation means microwave generation means
  • the microwave propagates in the coaxial waveguide 44 in the TM mode, the TE mode, or the TEM mode, and reaches the slot plate 42 of the antenna unit 4.
  • the light propagates radially from the center of the slot plate 42 toward the peripheral region via the inner conductor 44 B of the coaxial waveguide.
  • the microwaves from the slot pairs 46a and 46b pass through the cover plate 13 and the first gas supply unit 2 to the processing space below the gas supply unit 2. Released.
  • the force par play sheet 1 3 and the first gas supply unit 2 is configured Ri by the microwave transmissive material capable of example A 1 2 O 3, acts as a microwave transmission window, microwave Transmits these efficiently.
  • the circularly polarized wave is uniformly emitted 1: in the plane of the slot plate 42, and the electric field in the processing space below this The density is made uniform.
  • the energy of the microphone mouth wave excites a high-density plasma with a uniform density over the entire processing space.
  • the plasma generated in this way flows into the processing space below the gas supply unit 3 through the opening 34 of the second gas supply unit 3, and from the gas supply unit 3 to the processing space. Activate the C 5 F 8 gas supplied to form a reactive species.
  • the active species transported onto the wafer W are formed as a CF film.
  • the wafer W on which the CF film has been formed is unloaded from the processing chamber 1 via a gate valve (not shown).
  • CF film formed at the corners of the pattern on the surface of the wafer W was scraped off by the sputter etching effect of the Ar ions drawn into the wafer W by the bias voltage for plasma attraction, and the frontage was widened.
  • a CF film may be formed from the bottom of the pattern groove, and the CF film may be embedded in the recess.
  • Such a CF film deposition process is performed on a plurality of, for example, two wafers.
  • the first cleaning step is performed as shown in Fig. 4 (b).
  • -out valve V 2 opens, ⁇ 2 gas and A r gas from the first gas supply channel 2 3, H e gas, N e gas,
  • An inert gas selected from Kr gas and Xe gas, for example, Ar gas is supplied at a predetermined flow rate, for example, SOO sccm and 200 sccm, respectively.
  • a microwave microwave of 2.45 GHz and 2000 W is supplied from the microwave generating means to excite the plasma as described above, and the plasma is supplied from the gas supply unit 2 by the plasma.
  • Activate (plasma) O 2 gas Activate (plasma) O 2 gas.
  • the O 2 gas is converted into plasma to generate active species (plasma) of oxygen, such as radicals and ions, and the oxygen plasma reacts with the CF film adhered to the inside of the processing chamber 1.
  • the oxygen plasma cuts the bond between C and F in the CF film, and most of the C and F decomposition products generated by this evaporate and scatter, and are processed through the exhaust port 14. Discharged outside of container 1.
  • a part of C of the decomposition product is oxidized by oxygen plasma and becomes a new organic substance having a bond between C and o such as a carboxyl group (one COO) and a ketone group (—CO). Attached inside 1. After cleaning with oxygen plasma for about 30 seconds, for example, valve V2 is closed, and this process is completed.
  • a second cleaning process using hydrogen plasma is performed. That is, the first cleaning by the oxygen plasma in the processing vessel 1 is completed, and the first cleaning step and the process pressure (13.3 Pa) are performed in a state where there is no oxygen in the processing vessel 1.
  • the valve V 3 was opened, and the first gas supply path 2 3 From H 2
  • the gas and an inert gas selected from the group consisting of Ar gas, He gas, Ne gas, Kr gas, and Xe gas, for example, Ar gas, are supplied at predetermined flow rates, for example, 300 sccm and 200 sccm, respectively.
  • the second cleaning step is preferably performed after the first cleaning step in a state where there is no oxygen in the processing vessel 1, so that the H 2 gas and the inert gas described above are removed. It is preferable to supply microwaves as described below some time after flowing into the processing vessel 1. Therefore, after the first cleaning step, a purging step for substantially purging residual oxygen in the processing container 1 may be introduced before the second cleaning step. In this case, only an inert gas serving as a purge gas may be supplied into the processing vessel 1 in the purge step.
  • a microphone mouth wave is supplied from the microwave generating means under the same conditions (2.45 GHz, 2000 W) as in the first talling process, and the plasma is excited as described above.
  • This plasma activates H 2 gas.
  • the H 2 Ri by the plasma gases, such as hydrogen active species consisting of radicals and ions of H (plasma) is generated, the hydrogen plasma react with organic material containing C and o adhered inside the processing vessel 1 To decompose the organic matter.
  • the hydrogen plasma cuts the bond between c and o in the organic matter, and the decomposition products of C and o generated by this evaporate and scatter, and are discharged outside the processing vessel 1 through the exhaust port 14. Is done.
  • valves VI and V3 are closed, and this process is completed.
  • the wafer W is loaded into the processing chamber 1 as described above, and the above-described CF film formation processing is performed again.
  • the processing step of performing a predetermined processing on the wafer W and the CF film that is performed after the processing step and decomposes into the processing chamber by oxygen plasma are decomposed.
  • the configuration for performing the processing step corresponds to a substrate processing execution unit
  • the configuration for performing the first cleaning step corresponds to the oxygen plasma processing execution unit
  • the second configuration corresponds to a hydrogen plasma processing execution unit.
  • the substrate processing execution unit and the control unit C perform the first cleaning step after the processing step, and then perform the second cleaning step based on the recipe prepared in advance.
  • the oxygen plasma processing execution means and the hydrogen plasma processing execution means are controlled respectively.
  • the processing vessel 1 when removing the CF film adhered to the processing vessel 1 by cleaning, first, oxygen plasma is generated in the processing vessel 1, and the CF film is decomposed by the plasma, and then the processing is performed. Since a plasma of hydrogen is generated in the vessel 1 and the organic matter containing C and O is decomposed and removed by this plasma, the residue in the processing vessel 1 can be maintained while maintaining a high cleaning rate. Efficient cleaning can be performed by preventing the formation of CF films and new organic substances that could not be completely removed by cleaning.
  • the CF film adhering to the inside of the processing vessel 1 reacts with the oxygen plasma to completely decompose the CF film by the oxidizing power of the oxygen plasma. Most of the decomposition products F and C are scattered and removed. At this time, if the oxidizing power of the oxygen plasma is strong, new organic substances having a bond between c and o, such as a carboxyl group (1-COO) and a ketone group (1-CO), adhere to the inner wall of the processing vessel 1.
  • the decomposing ability of the CF film by oxygen plasma is also weakened.
  • the cleaning speed is significantly reduced and cleaning takes too long.
  • the present invention secures high cleaning efficiency by selectively using the oxidizing power of oxygen plasma and the reducing power of hydrogen plasma according to the object to be removed.
  • the operation and the effect of the configuration in which the oxygen gas and the hydrogen gas are simultaneously introduced into the processing vessel 1 are different. It is completely different.
  • the first cleaning is first performed by oxygen plasma, and then the second cleaning is performed by hydrogen plasma.
  • the deposits in (1) can be reliably removed, and efficient cleaning can be performed.
  • the generation of deposits in the processing chamber 1 is suppressed, there is no risk of deteriorating the film quality of the film obtained during the next film forming process, and the occurrence of a temporal change in the film quality is suppressed, and a stable film quality is secured. be able to.
  • examples performed to confirm the effects of the present invention will be described.
  • O 2 gas and Ar gas were introduced into the processing vessel, oxygen plasma was generated under the following oxygen plasma processing conditions, and the CF film attached inside the processing vessel was cleaned.
  • emission spectroscopy CO emission was observed.
  • This luminescence is generated when the CF film is decomposed by oxygen plasma and the decomposition products evaporate. Therefore, the point at which no light emission was observed was the point at which the decomposition of the CF film was completed, and the oxygen plasma treatment was terminated at this timing (tally Jung time: 30 seconds).
  • the emission was confirmed by emission spectroscopy, and the emission of the deposits different from the CF film was observed.
  • H 2 gas and Ar gas were introduced into the processing vessel, hydrogen plasma was generated under the following hydrogen plasma processing conditions, and the deposits inside the processing vessel were cleaned. When this treatment was confirmed by emission spectroscopy, all deposits were removed after 10 seconds.
  • Microwave 2 ⁇ 45 GHz, 200 W
  • the plasma processing apparatus to which the present invention is applied is not limited to the one using the radial line slot antenna as the plasma generation source, but may use other plasma generation systems, such as a parallel plate system, an electron cyclotron resonance (ECR) system,
  • ECR electron cyclotron resonance
  • the present invention can also be applied to a plasma processing apparatus that generates plasma using a plasma generation method such as an inductively coupled plasma generation method.
  • the plasma processing apparatus performs processing other than film formation processing on the wafer W, for example, plasma processing using a gas such as F 2 , N 2 , NF 3, COF 2, CO, and H 20 turned into plasma.
  • a gas such as F 2 , N 2 , NF 3, COF 2, CO, and H 20 turned into plasma.
  • the present invention is also applicable to the case where the CF film adhered to the inside of the processing vessel is removed by performing the process.
  • He gas, Ne gas, Kr gas, and Xe gas are used as the inert gas in the first and second tungsten processes in place of Ar gas. You can use it.
  • the fluorine-added carbon film adhered to the processing vessel of the plasma processing apparatus can be efficiently removed.
  • the present invention is useful for removing a CF film adhering to the inside of a processing vessel in an apparatus for performing plasma processing by converting a gas into a plasma in the processing vessel.

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  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
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Abstract

L'invention concerne un procédé pour purifier un film CF adhérant à la surface intérieure d'une chambre de traitement au plasma, dans laquelle un processus de formation d'un film CF sur un objet est mis en oeuvre. Tout d'abord, un plasma d'oxygène est généré à l'intérieur de la chambre de traitement pour la décomposition du film CF adhérant à la surface intérieure de cette chambre de traitement puis une majeure partie de F et C, comme produits de décomposition, est retirée. Un plasma d'hydrogène est ensuite généré à l'intérieur de la chambre de traitement pour la décomposition et le retrait d'une matière organique contenant C et O, qui adhère à la surface intérieure de ladite chambre de traitement. Le film CF étant décomposé par le plasma d'oxygène et la matière organique contenant C et O étant décomposée par le plasma d'hydrogène, la chambre de traitement peut être purifiée de façon fiable et un taux de purification élevé peut être garanti.
PCT/JP2004/004016 2003-03-25 2004-03-24 Procede de purification d'un appareil de traitement au plasma et appareil de traitement au plasma WO2004086480A1 (fr)

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JP2003083293A JP2004296512A (ja) 2003-03-25 2003-03-25 プラズマ処理装置のクリーニング方法
JP2003-083293 2003-03-25

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KR100768707B1 (ko) 2005-12-19 2007-10-19 주식회사 대우일렉트로닉스 유기 발광 소자의 제조 방법
JP5082411B2 (ja) * 2006-12-01 2012-11-28 東京エレクトロン株式会社 成膜方法
JP5751895B2 (ja) * 2010-06-08 2015-07-22 株式会社日立国際電気 半導体装置の製造方法、クリーニング方法および基板処理装置
CN105051871B (zh) * 2013-03-28 2018-06-12 芝浦机械电子株式会社 放置台及等离子体处理装置
JP7341099B2 (ja) 2020-04-07 2023-09-08 東京エレクトロン株式会社 クリーニング方法およびプラズマ処理装置

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WO1998021749A1 (fr) * 1996-11-14 1998-05-22 Tokyo Electron Limited Procede de nettoyage d'un dispositif de traitement au plasma et procede de traitement au plasma
JP2002299331A (ja) * 2001-03-28 2002-10-11 Tadahiro Omi プラズマ処理装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0250985A (ja) * 1988-08-11 1990-02-20 Semiconductor Energy Lab Co Ltd 炭素または炭素を主成分とする被膜を形成する装置のクリーニング方法
WO1998021749A1 (fr) * 1996-11-14 1998-05-22 Tokyo Electron Limited Procede de nettoyage d'un dispositif de traitement au plasma et procede de traitement au plasma
JP2002299331A (ja) * 2001-03-28 2002-10-11 Tadahiro Omi プラズマ処理装置

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