WO2004084409A1 - Procede pour commander et surveiller le fonctionnement d'un interrupteur de puissance a semi-conducteurs et dispositif pour mettre en oeuvre ledit procede - Google Patents

Procede pour commander et surveiller le fonctionnement d'un interrupteur de puissance a semi-conducteurs et dispositif pour mettre en oeuvre ledit procede Download PDF

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Publication number
WO2004084409A1
WO2004084409A1 PCT/DE2004/000496 DE2004000496W WO2004084409A1 WO 2004084409 A1 WO2004084409 A1 WO 2004084409A1 DE 2004000496 W DE2004000496 W DE 2004000496W WO 2004084409 A1 WO2004084409 A1 WO 2004084409A1
Authority
WO
WIPO (PCT)
Prior art keywords
power semiconductor
semiconductor switch
signal
igbt
transformer
Prior art date
Application number
PCT/DE2004/000496
Other languages
German (de)
English (en)
Inventor
Edmund Schirmer
Karl-Heinz Winkler
Original Assignee
Conti Temic Microelectronic Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Conti Temic Microelectronic Gmbh filed Critical Conti Temic Microelectronic Gmbh
Priority to DE112004000977T priority Critical patent/DE112004000977D2/de
Publication of WO2004084409A1 publication Critical patent/WO2004084409A1/fr

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/18—Modifications for indicating state of switch
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0828—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in composite switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/689—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit
    • H03K17/691—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit using transformer coupling

Definitions

  • the invention relates to a method for controlling and function monitoring of a power semiconductor switch according to the preamble of claim 1 and a device for performing the method.
  • Optocouplers are usually used for electrical isolation.
  • EP 996 227 A2 describes a method for controlling
  • optocouplers are required for control and function monitoring.
  • optocouplers are not suitable for due to their temperature-dependent service life. use in environments where widely varying operating temperatures can occur.
  • the invention has for its object to provide a method according to the preamble of claim 1, which can be carried out with little circuitry and is suitable for use in environments with widely varying operating temperatures.
  • the invention is also based on the object of specifying a device for carrying out the method.
  • a switching signal is fed to the power semiconductor switch to be controlled via a transformer designed as a transformer and a driver stage connected downstream thereof.
  • the switching signal is provided on the primary side of the transmitter as an amplitude-modulated signal.
  • the functional state of the power semiconductor switch is monitored on the secondary side of the transformer. If a malfunction is detected, this is signaled via the transmitter to the primary side of the transmitter.
  • Signaling is preferably characterized in that the secondary side a signal path between the transmitter and the power semiconductor switches shorted "is concluded and the resulting change in amplitude of the switching signal is detected on the primary side. It is thus possible, with a single inductive transformer, a potential separation, both for the purpose of Control of the power semiconductor switch as well as for the purpose of function monitoring of the power semiconductor switch.
  • the check whether a malfunction is present is advantageously carried out by evaluating a voltage present at the switching path of the power semiconductor switch, in particular the collector-emitter voltage of the power semiconductor switch, if the latter is designed as a bipolar transistor.
  • the signal path is preferably short-circuited via a low-resistance resistor.
  • the switching signal is advantageously generated by a UN D linkage from a digital control signal and a periodic clock signal, the signal level of the control signal specifying the desired switching state of the power semiconductor switch.
  • the method is ideally suited for controlling and monitoring the function of a bipolar transistor.
  • Insulated gate electrode executed power semiconductor switch.
  • a device for carrying out the method comprises a transformer designed as a transformer which is supplied with the switching signal on the primary side and is connected on the secondary side to a control connection of the power semiconductor switch via a driver stage.
  • They 'further comprises an opening provided on the secondary side of the transformer secondary-side evaluating unit for function monitoring of the power semiconductor switch and a likewise provided on the secondary side of the transformer short-circuit switch, which is driven by the secondary-side evaluating unit and through which a se- kundärscher signal path between the transmitter and the power semiconductor switch in Dependency of the functional state of the power semiconductor switch : can be short-circuited.
  • the apparatus further includes on the primary side of the transformer, a primary-side evaluation unit, which predates the switching state of the short- "" circuit switch by evaluating the signal amplitude of the switching signal detek- '.
  • '' 1 is a block diagram of an apparatus for controlling and monitoring function of a power semiconductor switch
  • FIG. 2 signal diagrams for various signals from the device according to FIG. 1.
  • the device according to the invention comprises a transformer T designed as a transformer, which divides the device into two galvanically separated parts, a low-voltage part 1 and a high-voltage part 2.
  • the low-voltage part 1 comprises the primary side of the transformer T. In this part
  • the device has a modulator M, which combines a digital control signal U s and a periodic clock signal U CL K by logical AND combination or by multiplication to form a switching signal U S1 , which the transmission
  • the low-voltage part 1 further comprises a primary-side evaluation unit K1 for evaluating the amplitude of the switching
  • the high-voltage part 2 of the device comprises the secondary side of the ' transformer T, on which a high-voltage switching signal U S2 generated by inductive coupling from the switching signal U S ⁇ is emitted.
  • the high-voltage part 2 further comprising the to be controlled and monitored power semiconductor switch IGBT, a Trei- ⁇ 15 berculture D, a secondary-side Ausreteein.heit K2 and a short-circuit switch SW. '
  • the secondary side of the transformer T is connected via the driver stage D to a control input of the power semiconductor switch IGBT.
  • the latter is designed as a bipolar transistor with an insulated gate electrode.
  • The. Gate electrode thus forms the control connection of the power semiconductor switch IGBT.
  • the driver stage D in turn comprises a rectifier for determining the envelope of the high-voltage switching signal U S2 and a comparator which generates the signal level required for switching the power semiconductor switch IGBT in accordance with the envelope curve determined and supplies this as gate voltage U G to the gate electrode 25 de.
  • the secondary-side evaluation unit K2 evaluates the collector-emitter voltage U CE of the power semiconductor switch IGBT by comparing it with a predetermined threshold value. If the collector-emitter voltage U C E falls below the threshold value, this means that there is a malfunction in the load circuit of the 30 power semiconductor switch IGBT. The presence of a malfunction is detected at the output of the secondary evaluation unit by the secondary Error signal U ERR2 displayed. If there is a malfunction, the short-circuit switch SW is closed by the secondary-side error signal U ERR2 . As a result, the signal path between the transformer T and the power semiconductor switch IGBT is short-circuited via a low-resistance resistor provided in the short-circuit switch SW.
  • FIG. 2 shows the profile of the control signal U s , the clock signal U C LK, the switching signal U S ⁇ , the high-voltage switching signal U S2 , the gate voltage U G , the primary-side error signal U ERR1 and the secondary-side error signal U ERR2 .
  • This is a simplified symbolic representation in which the signal propagation times and the transient response of the signals are neglected.
  • the control signal U s is provided as a digital signal by a control unit, for example a microcontroller or microprocessor not shown in FIG. 1. Its signal level are doing the required switching status of the LEI "stungméleiterschalters IGBT before. For example, corresponds to a low level is the 'switching state" open “and a high level of the switching status" Closed ".
  • the signal level of the control signal U s changes from the low level to the high level. This is intended to switch the power semiconductor switch IGBT to the conductive state: Accordingly, the power semiconductor switch IGBT is to be switched back to the blocking state at the time t2 when changing from the high level to the low level.
  • the control signal U s is modulated on the low voltage side 1 with the clock signal U CLK .
  • the resulting switching signal U S ⁇ and the high-voltage switching signal U S2 resulting from the switching signal U S ⁇ thus initially have one of the control signal U s corresponding envelope.
  • the envelope curve of the high-voltage switching signal U S2 is analyzed and the change in the envelope curve detects the low-high change in the control signal U s .
  • the level of the gate voltage U G changes from a lower value at which the power semiconductor switch IBGT is blocking to an upper value at which the power semiconductor switch IGBT is conductive.
  • the driver stage D is designed in such a way that the drop in amplitude of the high-voltage switching signal U S2 has no or at most only a slight influence on the gate voltage U G.
  • the conductor power semiconductor switch IGBT therefore remains in the conductive state.
  • the drop in amplitude of the switching signal U S ⁇ is detected on the low-voltage side 1 of the transformer T with the primary-side evaluation unit K1 and signaled by the signal level of the primary-side error signal U ERR ⁇ .
  • the signaling 'tion is carried out, for example, to which the control signal U standardized s-providing control inputs ", which then judges whether the power semiconductor switch IGBT to be switched into the blocking state, and immediately or at a later time t2 by a high-low change in the control signal U s causes the power semiconductor switch IGBT to open.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electronic Switches (AREA)
  • Power Conversion In General (AREA)

Abstract

Pour commander un interrupteur de puissance à semi-conducteurs, il est souvent nécessaire de prévoir une séparation de potentiel entre l'interrupteur de puissance à semi-conducteurs et un dispositif de commande qui commande ce dernier. En outre, si le dispositif de commande doit recevoir un retour d'information sur l'état de fonctionnement de l'interrupteur, il est également nécessaire de prévoir une séparation de potentiel dans le trajet de rétroaction. La séparation de potentiel s'effectue habituellement par l'intermédiaire d'optocoupleurs. L'objectif de l'invention est de créer un nouveau procédé permettant, avec une complexité de câblage réduite, de commander des interrupteurs de puissance à semi-conducteurs et de surveiller leur fonctionnement. A cet effet, le procédé selon l'invention consiste à mettre à disposition un signal de commande servant à commander un interrupteur de puissance à semi-conducteurs sur un côté primaire d'un transformateur inductif en tant que signal modulé en amplitude et à l'acheminer à un interrupteur de puissance à semi-conducteurs par l'intermédiaire du transformateur au moyen d'un étage excitateur prévu sur le côté secondaire du transformateur. Ledit procédé consiste également à surveiller l'état de fonctionnement de l'interrupteur de puissance à semi-conducteurs sur le côté secondaire du transformateur et à signaler au côté primaire du transformateur l'apparition d'un dysfonctionnement par l'intermédiaire du transformateur. De préférence, un trajet de signal est mis en court-circuit sur le côté secondaire du transformateur entre ce dernier et l'interrupteur de puissance à semi-conducteurs. La modification d'amplitude du signal de commande résultant de la mise en court-circuit est détectée sur le côté primaire.
PCT/DE2004/000496 2003-03-21 2004-03-12 Procede pour commander et surveiller le fonctionnement d'un interrupteur de puissance a semi-conducteurs et dispositif pour mettre en oeuvre ledit procede WO2004084409A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE112004000977T DE112004000977D2 (de) 2003-03-21 2004-03-12 Verfahren zur Ansteuerung und Funktionsüberwachung eines Leistungshalbleiterschalters und Vorrichtung zur Durchführung des Verfahrens

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10312704.6 2003-03-21
DE2003112704 DE10312704A1 (de) 2003-03-21 2003-03-21 Verfahren zur Ansteuerung und Funktionsüberwachung eines Leistungshalbleiterschalters und Vorrichtung zur Durchführung des Verfahrens

Publications (1)

Publication Number Publication Date
WO2004084409A1 true WO2004084409A1 (fr) 2004-09-30

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DE (2) DE10312704A1 (fr)
WO (1) WO2004084409A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9929566B2 (en) 2013-03-28 2018-03-27 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. Power electronic circuit and system comprising the same
CN110447170A (zh) * 2017-03-15 2019-11-12 沃思电子埃索斯有限责任两合公司 功率开关装置和操作所述功率开关装置的方法
WO2024156386A1 (fr) * 2023-01-24 2024-08-02 Robert Bosch Gmbh Dispositif de commande pour activer et désactiver un condensateur y, onduleur et système d'entraînement électrique

Families Citing this family (7)

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JP2006074372A (ja) * 2004-09-01 2006-03-16 Toshiba Corp デジタル信号伝送装置
WO2007128675A1 (fr) * 2006-05-10 2007-11-15 Abb Research Ltd Système pour transmettre des signaux et de l'énergie destiné à des composants électroniques à semi-conducteurs de puissance et procédé de transmission
EP2302797A1 (fr) * 2009-09-23 2011-03-30 ABB Schweiz AG Commande pour un composant semi-conducteur
EP2302798A1 (fr) * 2009-09-23 2011-03-30 ABB Schweiz AG Commande pour un composant semi-conducteur
PT2532081E (pt) 2010-02-03 2014-07-11 Abb Technology Ag Módulo de comutação para limitar e/ou quebrar a corrente de uma linha de energia elétrica
EP2530817A1 (fr) * 2011-05-30 2012-12-05 Siemens Aktiengesellschaft Dispositif de commande pour un convertisseur doté d'un potentiel de revêtement différent
DE102014105852A1 (de) * 2014-04-25 2015-10-29 Minebea Co., Ltd. Schaltung und Verfahren zum Übertragen eines Steuersignals für einen Schalter

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US4866556A (en) * 1986-11-11 1989-09-12 Siemens Aktiengesellschaft Circuit arrangement of a self protecting power switch
DE29617892U1 (de) * 1996-10-15 1996-11-28 Schuster, Wolfgang, Dipl.-Ing., 88410 Bad Wurzach Potentialtrennende Ansteuerschaltung für einen elektronischen Schalter

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DE4007539A1 (de) * 1990-03-09 1991-09-12 Asea Brown Boveri Ansteuerschaltung fuer einen leistungshalbleiterschalter
US5142432A (en) * 1991-10-21 1992-08-25 General Motors Corporation Fault detection apparatus for a transformer isolated transistor drive circuit for a power device
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9929566B2 (en) 2013-03-28 2018-03-27 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. Power electronic circuit and system comprising the same
CN110447170A (zh) * 2017-03-15 2019-11-12 沃思电子埃索斯有限责任两合公司 功率开关装置和操作所述功率开关装置的方法
CN110447170B (zh) * 2017-03-15 2023-07-21 沃思电子埃索斯有限责任两合公司 功率开关装置和操作所述功率开关装置的方法
WO2024156386A1 (fr) * 2023-01-24 2024-08-02 Robert Bosch Gmbh Dispositif de commande pour activer et désactiver un condensateur y, onduleur et système d'entraînement électrique

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Publication number Publication date
DE10312704A1 (de) 2004-09-30
DE112004000977D2 (de) 2006-02-16

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