WO2007128675A1 - Système pour transmettre des signaux et de l'énergie destiné à des composants électroniques à semi-conducteurs de puissance et procédé de transmission - Google Patents

Système pour transmettre des signaux et de l'énergie destiné à des composants électroniques à semi-conducteurs de puissance et procédé de transmission Download PDF

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Publication number
WO2007128675A1
WO2007128675A1 PCT/EP2007/053939 EP2007053939W WO2007128675A1 WO 2007128675 A1 WO2007128675 A1 WO 2007128675A1 EP 2007053939 W EP2007053939 W EP 2007053939W WO 2007128675 A1 WO2007128675 A1 WO 2007128675A1
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WIPO (PCT)
Prior art keywords
side circuit
circuit device
primary
signal
power semiconductor
Prior art date
Application number
PCT/EP2007/053939
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German (de)
English (en)
Inventor
Gerhard Hochstuhl
Micha Gilomen
Peter Barbosa
Original Assignee
Abb Research Ltd
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Filing date
Publication date
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Publication of WO2007128675A1 publication Critical patent/WO2007128675A1/fr

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/689—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit
    • H03K17/691—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit using transformer coupling
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/18—Modifications for indicating state of switch
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H03K17/605—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors with galvanic isolation between the control circuit and the output circuit
    • H03K17/61—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors with galvanic isolation between the control circuit and the output circuit using transformer coupling
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/722—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region with galvanic isolation between the control circuit and the output circuit
    • H03K17/723—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region with galvanic isolation between the control circuit and the output circuit using transformer coupling

Definitions

  • the present invention relates generally to the control of semiconductor components, in particular power semiconductor components such as, for example, bipolar transistors with an insulated gate (IGBT, insulated gate bipolar transistor) or power field effect transistors (power FET).
  • power semiconductor components such as, for example, bipolar transistors with an insulated gate (IGBT, insulated gate bipolar transistor) or power field effect transistors (power FET).
  • IGBT insulated gate bipolar transistor
  • power FET power field effect transistors
  • the present invention relates to a transmission device for transmitting electrical energy for operating circuit components with which the power semiconductor component is controlled.
  • Such a transmission device generally comprises a primary-side circuit device with a power supply unit for providing an electrical energy to be transmitted and a secondary-side circuit device in which the power semiconductor component is arranged, which receives the electrical energy transmitted by the transmission device.
  • IGBTs are voltage controlled power semiconductor devices that require a gate voltage in order to effect a collector-to-emitter line.
  • a potential isolation device is required for many applications since the gate driver circuit must be isolated from the control circuit in order to provide a level shift and to improve noise behavior. Such isolation requirements can be provided through the use of pulse gate transformers or the use of optocouplers.
  • a potential separation device separates electrical potentials of the primary-side circuit device from electrical potentials of the secondary-side circuit device. This is particularly necessary if there are very large voltage changes per unit of time, ie large du / dt jumps of a few kV. STATE OF THE ART
  • the circuit arrangements proposed according to the prior art have multi-channel pulse transformers which provide suitable insulation for IGBTs connected in series, the emitter connections of which are not at the same potential.
  • a control signal is used to control the power semiconductor component, which has to be transmitted potential-free from the primary-side circuit device to the secondary-side circuit device.
  • a potential isolation device in the form of a multi-channel pulse transformer is provided.
  • feedback signals must be transmitted from the secondary-side circuit device to the primary-side circuit device, in particular for error monitoring of the power semiconductor component.
  • These feedback signals include, for example, error signals that indicate an error state of the power semiconductor component controlled with the control signal.
  • a power supply for the secondary-side circuit devices is also required, so that the circuit components arranged in the secondary-side circuit device are sufficiently supplied with electrical energy.
  • a separate and electrically insulated energy supply unit is required in order to supply the gate energy for the power semiconductor component (for example the IGBT).
  • the energy is usually supplied via a separately arranged transformer.
  • control or feedback signals for controlling the power semiconductor component or for indicating an operating state or an error status of the power semiconductor component must be transmitted potential-free for the reasons mentioned above, so that a separate transmission device is required for the transmission of these signals.
  • a major disadvantage of conventional devices and methods for controlling power semiconductor components is that the transmission of the energy to the secondary circuit device and the optionally bidirectional transmission of control and feedback signals or status signals requires a large number of circuit components, which makes the overall circuit design expensive and prone to failure .
  • DE 103 12 704 A1 specifies a generic transmission device for transmitting electrical energy from a primary-side circuit device to a secondary-side circuit device via a potential separation device, but explicitly there is no energy supply unit arranged in the primary-side circuit device for providing the electrical energy to be transmitted and also none primary-side feedback signal decoupling unit. Rather, only the switching signal is evaluated by two units.
  • EP 1 533 903 A2 also discloses a transmission device for transmitting electrical energy from a primary-side circuit device to a secondary-side circuit device via a potential separation device, although an error signal is transmitted from the secondary side to the primary side, but no transmission of an error signal from a secondary-side signal coupling device to the primary side Circuit device transmitted and fed as a feedback signal to the control device for controlling the power semiconductor component.
  • An essential idea of the invention is to transmit energy and control or status signals via a single circuit component, so that separately provided components for energy transmission on the one hand and for signal transmission on the other are eliminated.
  • a key idea of the invention lies in the configuration of the primary-side and secondary-side circuit devices in such a way that they each have signal coupling devices with which control and status signals can be coupled in and out in an energy transmission path.
  • the transmission device for transmitting electrical energy from a primary-side circuit device to a secondary-side circuit device has an energy supply unit arranged in the primary-side circuit device for providing the energy to be transmitted and a power semiconductor component arranged in the secondary-side circuit device for receiving the transmitted electrical energy has, via a provided potential separation device for separating electrical potentials of the primary-side switching device from the electrical potential of the secondary-side switching device in addition to the electrical energy from the primary-side switching device to the secondary-side switching device and also transmits control and status signals between the primary-side switching device and the secondary-side switching device in a potential-free manner.
  • the potential isolation device can expediently be designed as an electrical transformer for energy transmission, in such a way that no additional components have to be provided in the potential isolation device for the transmission of control and status signals.
  • the transmission device for the transmission of electrical energy from a primary-side circuit device to a secondary-side circuit device essentially has an energy supply unit arranged in the primary-side circuit device for providing the electrical energy to be transmitted, a power semiconductor component arranged in the secondary-side circuit device for receiving the transmitted electrical energy and a potential separation device for separating electrical potentials of the primary-side circuit device from the electrical potential of the secondary-side circuit device.
  • the primary-side circuit device has a primary-side signal coupling device for coupling and decoupling control and status signals
  • the secondary-side circuit device has both a secondary-side signal coupling device for coupling and decoupling the control and status signals and an energy decoupling unit for decoupling the via the potential separation device has transmitted electrical energy.
  • the control and status signals are transmitted potential-free and together with the electrical energy between the primary-side circuit device and the secondary-side circuit device via the potential separation device.
  • the method according to the invention for transmitting electrical energy from the primary-side circuit device to the secondary-side circuit device essentially comprises the following steps:
  • the potential isolation device is designed as an electrical transformer with primary and secondary windings. It is advantageous to design the electrical transformer with a single magnetic toroid in such a way that a number of electronic components is reduced.
  • the primary-side signal coupling device for coupling and decoupling control and status signals has a control signal coupling unit and a feedback signal coupling unit.
  • the control signal coupling unit is designed for coupling a control signal with which the power semiconductor component is controlled.
  • the feedback signal decoupling unit serves to decouple a feedback signal which indicates an operating state or an error status of the power semiconductor component arranged in the primary-side circuit device.
  • the secondary-side signal coupling device for coupling in and coupling out control and status signals has a feedback signal coupling unit and a control signal coupling unit.
  • an error signal which corresponds to an error status of the power semiconductor component, which is arranged in the secondary circuit device, is coupled in on the secondary side, transmitted to the primary-side circuit device and fed as the feedback signal to a control device for controlling the power semiconductor component.
  • fault signal can also be used to monitor fault states of further secondary circuit components.
  • secondary voltage monitoring can also be provided.
  • the control signal decoupling unit serves to decouple the control signal with which the power semiconductor component is controlled.
  • control signal decoupling unit is constructed from a voltage divider unit for dividing a rectified secondary voltage and a filter unit for filtering the divided rectified secondary voltage in order to obtain the above-mentioned control signal.
  • the filter unit for filtering the divided rectified secondary voltage is expediently designed as an electrical low-pass filter. In this way, the average of the divided rectified secondary voltage can be obtained over a predetermined period of time. It is thus possible to obtain a drive signal which switches the power semiconductor component arranged in the secondary-side circuit device between at least two states.
  • the power semiconductor component can be designed as an insulated gate bipolar transistor (IGBT) or a power field effect transistor (Power FET).
  • IGBT insulated gate bipolar transistor
  • Power FET power field effect transistor
  • the feedback signal coupling unit for coupling the error signal which indicates an error status of the power semiconductor component or associated driver units, contains a series connection of a switching element and a series resistor.
  • a series connection causes the switching element to be switched through as a function of the error signal, a change in the secondary current being brought about in the potential isolation device.
  • the energy decoupling unit arranged in the secondary-side circuit device is designed as a Graetz peak value rectifier.
  • control and status signals can be transmitted bidirectionally between the primary-side circuit device and the secondary-side circuit device via the potential separation device.
  • the control and status signals preferably comprise a control signal with which the power semiconductor component arranged in the secondary-side circuit device can be switched between at least two states.
  • control and status signals include an error signal with which the functionality of the power semiconductor component arranged in the secondary-side circuit device can be checked.
  • the error signal with which the functionality of the power semiconductor component is checked is transmitted to the primary-side circuit device, a feedback signal corresponding to the error signal being fed to a control device for controlling the power semiconductor component.
  • the divided, rectified secondary voltage filtered by the filter unit preferably forms the control signal for the power semiconductor component, at least two states of the power semiconductor component being switched as a function of at least one voltage level of the control signal.
  • the transfer of the electrical energy provided from the primary-side circuit device to the secondary-side circuit device via the potential separation device can be carried out with a constant pulse signal period. Furthermore, when the electrical energy provided is transmitted, the pulse width can be varied at the constant pulse signal period, the variation of the pulse width causing the power semiconductor component to switch between at least two states. In this way, the control signal for the power semiconductor component is determined.
  • primary-side and secondary-side signal coupling devices thus allows control and status signals which are required for the operation of the power semiconductor component arranged in the secondary-side circuit device to be transmitted together with the electrical energy for the operation of the power semiconductor component.
  • the object of the invention is achieved, namely to provide a transmission device for the transmission of both energy and control and status signals, which provides safe energy and signal transmission with few components and with low susceptibility to interference.
  • Figure 1 is a block diagram of a transmission device for transmitting energy and control and status signals according to a preferred embodiment of the present invention
  • Figure 2 is a detailed circuit diagram of essential circuit units of the transmission device according to the preferred embodiment of the present invention
  • Figure 3 (a) timing diagrams for secondary voltage, rectified secondary voltage and drive signal for the case of a switched off power semiconductor device
  • Figure 3 (b) timing diagrams for secondary voltage, rectified secondary voltage and drive signal for the case of a power semiconductor device is switched on.
  • the present invention aims to improve the operating behavior of power semiconductor components and to monitor their operating state at the same time. Since the operation of power semiconductor components such as, for example, IGBTs requires pulse isolation for reasons of electrical isolation of emitter connections from power semiconductor components connected in series, a multi-channel pulse transformer is used with which energy transfer from a primary-side circuit device to a secondary-side circuit device is made possible.
  • the principle on which the invention is based is to simultaneously transmit control and status signals via the same transformer, these comprising control signals for the power semiconductor component and monitoring signals for monitoring the operating state of the power semiconductor component.
  • FIG. 1 shows a block diagram of a preferred embodiment of the present invention.
  • the transmission device illustrated in FIG. 1 comprises three main blocks cke, that is, the primary-side circuit device 100, a potential separation device 300 and the secondary-side circuit device 200.
  • the potential isolation device 300 is designed as a transformer with two primary windings 301a, 301b and two secondary windings 302a, 302b.
  • the primary-side circuit device 100 comprises an energy supply unit 102 for providing electrical energy to be transmitted and a primary-side signal coupling device 106, into which a modulation signal 110 can be coupled, and from which a feedback signal 1111 can be coupled out. Furthermore, a control device 105 is shown, which is connected to a control computer 1 12. The control device 105 together with the control computer 112 serves to control a power semiconductor component 204 arranged in the secondary-side circuit device 200 by means of the modulation signal 110.
  • the primary-side signal coupling device 106 has a control signal
  • the feedback signal decoupling unit 104 provides the feedback signal 1 1 1, which allows a statement about the functionality of the power semiconductor component 204.
  • the generation of the feedback signal 1 1 1 in the secondary-side circuit device 200 is described below.
  • the modulation signal 1 10 serves as a
  • Control signal for the power semiconductor component 204 the modulation signal being provided as a control signal 403 for the power semiconductor component 204 after transmission via the potential separation device 300 and corresponding signal processing (explained below with reference to FIGS. 3 (a) and 3 (b)).
  • the secondary-side circuit device 200 provides a transmitted secondary voltage 401 ((A) in FIG. 3) and comprises, in addition to the power semiconductor component 204, an energy decoupling unit 201 and a secondary-side signal coupling device 208.
  • the energy decoupling unit 201 is connected to the secondary winding 302a, 302b of the potential isolation device 300, while the feedback signal Coupling unit 104 of the primary-side circuit device 100 is connected to the primary windings 301 a, 301 b of the potential separation device 300.
  • the structure of the feedback signal decoupling unit 104, the energy decoupling unit 201, the feedback signal coupling unit 202 and the drive signal decoupling unit 203 is explained below with reference to FIG. 2.
  • control signal 403 is transmitted from the primary-side circuit device 100 to the secondary-side circuit device 200, more than one control signal 110, 403 can be provided for controlling more than one power semiconductor component 204. It is then also possible to send a plurality of feedback signals 1 1 1 from the secondary circuit device
  • the signal coupling device 208 on the secondary side is constructed from two essential components which are designated by the reference symbols 203 and 204.
  • a control signal decoupling unit 203 serves to decouple the control signal for the power semiconductor component 204.
  • the feedback signal coupling unit which is constructed as below with reference to FIG. 2, generates a primary side
  • Feedback signal 1 1 1 as a function of an error signal 21 1 supplied via an error signal input unit 212 (see FIG. 2).
  • the feedback signal coupling-in unit 202 and the control signal coupling-out unit 203 are among one another and with the energy coupling-out unit
  • the electrical energy transmitted by the transmission device according to the invention from the primary-side circuit device 100 to the secondary-side circuit device 200 serves to supply all circuit components, ie not only to drive and control the power semiconductor terbauelements 204.
  • the circuit components such as the feedback signal coupling unit 202 and the control signal coupling unit 203 also receive part of the electrical energy transmitted via the potential separation device 300.
  • FIG. 2 shows the potential separation device 300 with primary-side and secondary-side circuit components in detail. Shown in particular is the decoupling of an error signal 21 1 by means of current detection units 101 a, 101 b, which form the essential components of the feedback signal decoupling unit 104, and, arranged on the secondary side, the detailed structure of the energy decoupling unit 201, the feedback signal coupling unit 202 and the control signal decoupling unit 203.
  • the potential separation device 300 which forms a potential separation point 303 between the primary-side circuit device 100 and the secondary-side circuit unit 200, is formed on the primary side from two primary windings 301 a and 301 b, while the secondary winding 302 is shown as a single winding.
  • a supply voltage potential 108 is applied to the connection terminal between the first primary winding 301 a and the second primary winding 301 b.
  • This supply voltage potential is, for example, 24 V compared to a ground potential indicated by reference number 107.
  • Circuit device 200 arranged power semiconductor component 204, a high-frequency voltage generated by an oscillator (not shown), the frequency of which is, for example, 1 MHz, is modulated with a lower frequency of, for example, 10 kHz.
  • Such an amplitude-modulated high-frequency voltage is transmitted to the secondary winding 302 in accordance with a transformation ratio of the potential isolation device (transformer) 300.
  • the power semiconductor component 204 (see FIG. 1) can now be switched by the type of modulation of the high-frequency voltage with the low frequency.
  • the switching between two operating states ie an off state (FIG. 3 (a)) and an on state (FIG. 3 (b)), is explained below with reference to FIG.
  • the energy that is provided by the energy supply unit 102 (not shown in FIG. 2) is transmitted from the primary-side circuit arrangement 100 to the secondary-side circuit arrangement 200 via the potential separation device 300.
  • the primary windings 301 a, 301 b of the potential separation device 300 are connected at their common connection to the supply voltage potential 108, while their other connection is connected to the ground potential 107 via modulation units 109a, 109b and the current detection units 101 a, 101 b.
  • the modulation units 109a, 109b provide the modulation of the high-frequency voltage with a modulation signal of a low frequency (for example 10 kHz). The modulation is only shown schematically in FIG.
  • the secondary-side circuit components which are arranged in the secondary circuit device 200 will be explained in more detail below.
  • the secondary-side circuit device is fed via the secondary winding 302 of the potential separation device 300.
  • the energy decoupling unit 201 is formed by a peak value rectifier, which is also referred to as a Graetz peak value rectifier.
  • a rectified secondary voltage 402 (B) is obtained as the output signal of the energy decoupling unit 201, which is shown as an example of the switch-off and switch-on states in FIGS. 3 (a) and 3 (b) as a time curve (B).
  • the rectified secondary voltage 402 thus obtained serves to supply the secondary circuit components with energy (for example via the supply lines 214a, 214b, 214c, which are shown in FIG. 1), a current flow in the direction shown by the arrow 404 (supply current) being predetermined by a discharge blocking unit 207 becomes.
  • the discharge blocking unit 207 is designed as a rectifier diode, which prevents a current return flow into the energy decoupling unit 201 and thus prevents a discharge of power semiconductor component circuit components.
  • the power semiconductor component 204 If the power semiconductor component 204 is continuously kept in an on or off state, apart from leakage currents, no feed currents 404 flow to the power semiconductor component 204, ie no energy is drawn from the energy decoupling unit 201 for operating the power semiconductor component 204. There is an energy requirement in the power semiconductor component 204 only when the latter changes its state, that is to say from a switched-off state to a switched-on state or vice versa. Since the high-frequency voltage coupled out on the secondary side is modulated with a modulation frequency of 10 kHz, such an energy requirement can be provided easily and reliably after rectification of the coupled-out high-frequency voltage.
  • a feedback signal 1 1 1 which is provided to the control device 105 in the primary-side circuit device 100 (see FIG. 1), is explained below with reference to FIG. 2.
  • a feedback signal 1 1 1 which forms part of the control and status signals 1 1 1, 21 1, 403, together with the electrical energy between the primary-side circuit device 100 and the secondary-side circuit device 200 to be transmitted potential-free via the potential separation device 300.
  • the signal transmission is directed from the secondary-side circuit device 200 to the primary-side circuit device 100.
  • An error signal 21 1 is provided as the feedback signal 1 1 1, for example, which is fed to an error signal input unit 212 of the feedback signal coupling unit.
  • Such an error signal 21 1 indicates, for example, a defective state of the power semiconductor component 204, the extraction of the error signal 21 1 not being explained in more detail here.
  • a coupling in of the error signal 21 1 leads to the switching through of a switching element 210 which is arranged in series with a series resistor 209 between output connections (1) and (2) of the energy decoupling unit 201.
  • the switching element 210 As a function of the error signal 21 1, the current flow in the series branch formed from the switching element 210 and the series resistor 209 is increased, as a result of which the secondary-side current flow in the potential isolation device 300 is increased overall.
  • Such a secondary-side current increase leads to an increase in the primary-side current flow, ie an increase in the current flow on the one hand through the primary winding 301 a, the modulation unit 109a and the current detection unit 101 a and on the other hand through the primary winding 301 b, the modulation unit 109b and the current detection unit 101 b.
  • the current detection units 101 a, 101 b which detect the increased current flow caused by the error signal 21 1, are designed as series resistors (shunts).
  • the feedback signals 1 1 1 a, 1 1 1 b then represent the voltage drop across the current detection units 101 a, 101 b and are used to control the control device 105.
  • a hole formed as an IGBT power semiconductor device for output terminals (3) and (4) the secondary side circuit arrangement shown in FIG 2200 is not an ohmic conclusion, it ie flows in the sta- tionary, on- and off-state of the power semiconductor component 204 no or only a negligible current, so that the secondary-side current increase caused by the error signal 21 1 can be reliably detected on the primary side with great accuracy.
  • control signal 403 serves to control the power semiconductor component 204, in particular to switch the power semiconductor component 204 on and off.
  • the control signal 403 is used as a component of the control and status signals 1 1 1, 21 1, 403 together with of the electrical energy from the primary-side circuit device 100 to the secondary-side circuit device 200 via the potential separation device 300 potential-free.
  • the control signal 403 results here from the modulation signal 110 provided on the primary side and a setting of a pulse duty factor in the rectified one
  • the drive signal decoupling unit 203 consists on the one hand of a voltage divider 206a, 206b in order to divide the rectified secondary voltage 402 down to an appropriate output voltage level (C), and on the other hand has a filter unit 205, 206b for one of the rectified secondary voltage Filter 402 divided rectified secondary voltage 410.
  • the filter unit is constructed from a parallel connection of a capacitor 205 and a resistor 206b and represents a low-pass filter for the rectified secondary voltage 402.
  • the drive signal 403 is output as a filtered output signal of the filter unit 205, 206b via a signal output connection (5).
  • FIG. 3 shows three voltage curves (A), (B) and (C) for the switched-off state of the power semiconductor component 204 (FIG. 3 (a)) and the switched-on state (FIG. 3 (b)).
  • the power semiconductor component 204 arranged in the secondary-side circuit device 200 can be switched between more than two states if modulation signals 110 are designed accordingly.
  • modulation signals 110 are designed accordingly.
  • only two states that is to say an on state and an off state, will be discussed.
  • the switched-off state of the power semiconductor component 204 is shown in FIG. 3 (a). Voltage curves are shown as a function of time t, the voltage curve (A) representing the secondary voltage 401 which is present across the secondary winding 302 of the potential isolation device 300, the voltage curve (B) representing the rectified secondary voltage 402 and the voltage curve (C) representing the control signal 403.
  • the rectified secondary voltage 402 is obtained by the peak value rectification of the secondary voltage 401 provided in the energy decoupling unit 201.
  • the voltages 401 and 402 in this case have a pulse signal period, identified by the reference symbol 408, which is determined by the modulation frequency impressed on the primary side.
  • a modulation frequency of 10 kHz set as mentioned above such a pulse signal period 408 is, for example, 0.1 ms.
  • a pulse width 403 is shown in FIGS. 3 (a) and 3 (b), by means of which a pulse duty factor is given together with the pulse signal period 408.
  • FIGS. 3 (a) and 3 (b) A comparison of FIGS. 3 (a) and 3 (b) with regard to the pulse width 409 and the duty cycle shows a clear difference.
  • a pulse width 409 is provided for the switched-on state (FIG. 3 (b)) compared to the switched-off state (FIG. 3 (a)). This means that filtering the rectified secondary voltage 402 (B) leads to an average value of the control signal 403 (C), which in the switched-on state (FIG
  • FIGS. 3 (a) and 3 (b) each show corresponding switch-on areas 406 and switch-off areas 407 which are separated by a predefinable switching threshold 405.
  • the switch-off state of the power semiconductor component 204 is now determined thereby. specifies that the mean value of the drive signal 403 is in the switch-off area 407, while the switch-on state of the power semiconductor component 204 is defined in that the mean value of the drive signal 403 is in the switch-on area 406.
  • switch-on area 406 and switch-off area 407 can be freely defined by switching threshold 405. It is thus possible to generate a control signal 403 solely by changing the duty cycle of the secondary voltage 401, which is predetermined by the primary circuit device 100, without changing the pulse signal period 408 or the modulation frequency itself.
  • a transmission of electrical energy from the primary-side circuit device 100 to the secondary-side circuit device 200 via the potential separation device 300 is ensured here, because in both cases, i.e. in the case of a low duty cycle (FIG. 3 (a)) and in the case of a large duty cycle (FIG. 3 (b)), a sufficient supply current 404 can be provided.
  • the feed current 404 is only required anyway if a switchover from the switched-on state to the switched-off state and vice versa is to take place, as explained above.
  • the control signal 403 of a comparator unit can be used to exactly define the switch-on or switch-off threshold

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Abstract

L'invention fournit un système de transmission pour transmettre de l'énergie électrique depuis un dispositif de circuit d'un premier côté (100) vers un dispositif de circuit d'un second côté (200) par l'intermédiaire d'un dispositif d'isolation de potentiel (300). L'énergie électrique à transmettre est produite dans une unité d'alimentation en énergie (102) du dispositif de circuit du premier côté (100) et reçue par un composant à semi-conducteurs de puissance (204) du dispositif de circuit du second côté (200). Il est prévu au niveau du premier côté et au niveau du second côté des dispositifs de couplage de signaux (106, 208) pour coupler et découpler des signaux de commande et d'état (403, 111, 211) qui sont transmis avec l'énergie électrique de façon bidirectionnelle et ouverte entre le dispositif de circuit du premier côté (100) et le dispositif de circuit du second côté (200) par l'intermédiaire du dispositif d'isolation de potentiel (300).
PCT/EP2007/053939 2006-05-10 2007-04-23 Système pour transmettre des signaux et de l'énergie destiné à des composants électroniques à semi-conducteurs de puissance et procédé de transmission WO2007128675A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP06405194 2006-05-10
EP06405194.9 2006-05-10

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WO2007128675A1 true WO2007128675A1 (fr) 2007-11-15

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Publication number Priority date Publication date Assignee Title
EP2302797A1 (fr) * 2009-09-23 2011-03-30 ABB Schweiz AG Commande pour un composant semi-conducteur
EP2302798A1 (fr) * 2009-09-23 2011-03-30 ABB Schweiz AG Commande pour un composant semi-conducteur
WO2011095212A3 (fr) * 2010-02-03 2011-11-17 Abb Technology Ag Module de commutation s'utilisant dans un dispositif pour limiter et/ou interrompre le courant d'une ligne de transport ou de distribution d'électricité
FR3013004A1 (fr) * 2013-11-08 2015-05-15 Valeo Systemes Thermiques Commande securisee d'un rechauffeur electrique
EP3624317A1 (fr) 2018-09-12 2020-03-18 ABB Schweiz AG Dispositif de commande d'un dispositif de semiconducteur de puissance
EP3624318A1 (fr) 2018-09-12 2020-03-18 ABB Schweiz AG Transmission d'énergie et d'un signal de données par l'intermédiaire d'un transformateur

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EP1533903A2 (fr) * 2003-11-19 2005-05-25 Semikron Elektronik GmbH Patentabteilung Procédé et dispositif pour la transmission des commutations avec isolation galvanique

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WO1994006209A1 (fr) * 1992-09-02 1994-03-17 Exide Electronics Corporation Circuit d'attaque de grille
WO2002027913A1 (fr) * 2000-09-29 2002-04-04 Siemens Aktiengesellschaft Commande d'entrainement pour un entrainement electrique presentant une isolation electrique fiable entre une partie de puissance et une unite de regulation
DE10312704A1 (de) * 2003-03-21 2004-09-30 Conti Temic Microelectronic Gmbh Verfahren zur Ansteuerung und Funktionsüberwachung eines Leistungshalbleiterschalters und Vorrichtung zur Durchführung des Verfahrens
EP1533903A2 (fr) * 2003-11-19 2005-05-25 Semikron Elektronik GmbH Patentabteilung Procédé et dispositif pour la transmission des commutations avec isolation galvanique

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2302797A1 (fr) * 2009-09-23 2011-03-30 ABB Schweiz AG Commande pour un composant semi-conducteur
EP2302798A1 (fr) * 2009-09-23 2011-03-30 ABB Schweiz AG Commande pour un composant semi-conducteur
WO2011095212A3 (fr) * 2010-02-03 2011-11-17 Abb Technology Ag Module de commutation s'utilisant dans un dispositif pour limiter et/ou interrompre le courant d'une ligne de transport ou de distribution d'électricité
RU2548167C2 (ru) * 2010-02-03 2015-04-20 Абб Текнолоджи Аг Модуль переключения для использования в устройстве для ограничения и/или прерывания тока линии передачи или распределения электроэнергии
US9065326B2 (en) 2010-02-03 2015-06-23 Abb Technology Ltd Switching module for use in a device to limit and/or break the current of a power transmission or distribution line
FR3013004A1 (fr) * 2013-11-08 2015-05-15 Valeo Systemes Thermiques Commande securisee d'un rechauffeur electrique
FR3013003A1 (fr) * 2013-11-08 2015-05-15 Valeo Systemes Thermiques Commande securisee d'un rechauffeur electrique
WO2015067730A3 (fr) * 2013-11-08 2015-09-17 Valeo Systemes Thermiques Commande sécurisée d'un réchauffeur électrique
EP3624317A1 (fr) 2018-09-12 2020-03-18 ABB Schweiz AG Dispositif de commande d'un dispositif de semiconducteur de puissance
EP3624318A1 (fr) 2018-09-12 2020-03-18 ABB Schweiz AG Transmission d'énergie et d'un signal de données par l'intermédiaire d'un transformateur

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