WO2004079830A1 - Dispositif electroluminescent a semi-conducteur avec compose nitrure iii-v et procede de fabrication - Google Patents

Dispositif electroluminescent a semi-conducteur avec compose nitrure iii-v et procede de fabrication Download PDF

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Publication number
WO2004079830A1
WO2004079830A1 PCT/JP2004/002589 JP2004002589W WO2004079830A1 WO 2004079830 A1 WO2004079830 A1 WO 2004079830A1 JP 2004002589 W JP2004002589 W JP 2004002589W WO 2004079830 A1 WO2004079830 A1 WO 2004079830A1
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WO
WIPO (PCT)
Prior art keywords
substrate
emitting device
semiconductor light
compound semiconductor
nitride
Prior art date
Application number
PCT/JP2004/002589
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English (en)
Japanese (ja)
Inventor
Keiji Ito
Yoshiaki Hasegawa
Toshiya Yokogawa
Original Assignee
Matsushita Electric Industrial Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co., Ltd. filed Critical Matsushita Electric Industrial Co., Ltd.
Publication of WO2004079830A1 publication Critical patent/WO2004079830A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers

Definitions

  • Nitride III-V compound semiconductor light emitting device and method of manufacturing the same
  • the present invention relates to a nitride-based III-V compound semiconductor light emitting device formed using a nitride-based III-V compound semiconductor substrate such as a GaN-based semiconductor substrate.
  • the technology relates to controlling the stress generated in the structure.
  • red semiconductor lasers having a wavelength of 660 nm.
  • This red semiconductor laser is, for example, a GaAs compound semiconductor made of InGaAlP-based compound semiconductor. Manufactured by epitaxial growth on a substrate.
  • next-generation optical disks have been actively developed to expand the storage capacity of DVDs.
  • Light sources for such next-generation optical discs are required to stably emit blue-violet laser light (wavelength 4 OO nm band) whose wavelength is even shorter than that of red light.
  • 400 nm wavelength GaN-based semiconductor lasers are most expected as light sources for recording and reproduction of next-generation optical disks such as B1u-ray disks (trademark).
  • B1u-ray disks trademark
  • a sapphire substrate or a low dislocation-on-sapphire substrate has been used in the manufacture of a GaN-based semiconductor light-emitting device.However, such a substrate is thermally expanded with a nitride III-V compound semiconductor. It has the disadvantage that the coefficient difference is large and that it is not easy to form the end face of the GaN-based semiconductor laser.
  • the present inventor believes that one of the factors that promotes the deterioration of the GaN-based semiconductor laser and the light emitting die is the force acting on the active layer. According to the studies made by the present inventors, when a large tensile force acts on the active layer, the element is significantly deteriorated, and the life time is extremely reduced. Such force depends on the type of substrate that forms the device and the nitride III-V group that forms the device. It depends strongly on the thermal history during crystal growth of compound semiconductors and during mounting with bonding materials.
  • the present invention has been made in order to solve the above problems, and an object of the present invention is to provide a semiconductor light emitting device which prevents device deterioration due to force and has an improved life time, and a method for manufacturing the same. . Disclosure of the invention
  • the nitride-based II I-V compound semiconductor light-emitting device of the present invention comprises a nitride-based
  • a III-V compound semiconductor substrate a semiconductor laminated structure provided on a main surface of the substrate, a first electrode formed on a back surface of the substrate, and a second electrode formed on the semiconductor laminated structure.
  • the semiconductor light-emitting element emits light by a current flowing between the first electrode and the second electrode, and has a radius of curvature that defines the amount of warpage of the semiconductor light-emitting element. Adjusted to ⁇ cm or more.
  • the radius of curvature is greater than or equal to 83 cm and, if necessary, is greater than or equal to 89 cm.
  • the thickness of the substrate is more than 100 171 and not more than 5 ⁇ m.
  • the thickness of the substrate is more than 15 jum.
  • the substrate is a GaN-based compound semiconductor group. ⁇ ⁇ .
  • the semiconductor light-emitting element module includes any one of the nitride-based III-V compound semiconductor light-emitting elements and a support member to which the nitride-based in-V compound semiconductor light-emitting element is fixed.
  • the semiconductor light emitting elements are joined by a molten metal.
  • a method of manufacturing a nitride III-V compound semiconductor device module includes: forming a nitride III-V compound semiconductor substrate; a semiconductor laminated structure provided on a main surface of the substrate; and a back surface of the substrate. Preparing a semiconductor light emitting device having a first electrode formed on the semiconductor laminated structure and a second electrode formed on the semiconductor laminated structure ( ⁇ ); and using a bonding material to form the nitride III-V compound semiconductor device.
  • a method of manufacturing a nitride-based III-V compound semiconductor device module including the step of mounting on a package ( ⁇ ), wherein the thickness of the substrate of the semiconductor light emitting element and the mounting temperature in the step ( ⁇ ) are adjusted. By doing so, the absolute value of the J force generated in the semiconductor multilayer structure is controlled to 0.22 GPa or less.
  • the step (B) includes a step of mounting the semiconductor light-emitting device on a submount, and adjusting a thickness of the substrate according to a coefficient of thermal expansion of the submount and the mounting temperature.
  • FIG. 1 is a cross-sectional view showing a configuration of a nitride-based II I-V compound semiconductor light emitting device according to the present invention.
  • FIG. 2 is a cross-sectional view showing a state in which the elements of FIG. 1 are mounted on a submount in a junction-up arrangement.
  • FIG. 3 is a cross-sectional view showing a state in which the device of FIG. 1 is mounted on a submount in a junction-down arrangement.
  • FIG. 4 is a graph showing the relationship between the narcotic force applied to the active layer of the light emitting device and the substrate thickness in the embodiment of the present invention.
  • FIG. 5 is a drawing showing the relationship between the amount of warpage of the element and the radius of curvature of the warp.
  • the GaN substrate has higher thermal conductivity and better heat dissipation than the sapphire substrate, but it should be used as thin as possible in order to minimize the rise in device temperature during laser operation. It is considered favorable.
  • the element life greatly varies depending on the thickness of the substrate. It has been considered that the thinner the substrate used for a light emitting element such as a semiconductor laser, the better the heat dissipation, and the thinner the GaN substrate, the longer the life of the element. The inventors have found that when the substrate thickness is small, the life of the element is rather deteriorated, and have arrived at the present invention.
  • the thickness of the GaN substrate larger than the substrate thickness (approximately 50 to 65 m) which has been considered to be preferable in the past, the life of the element can be reduced. Deterioration can be suppressed.
  • FIG. ⁇ 1 is a nitride-based material according to the present embodiment I I I
  • FIG. 2 is a sectional view of a group V compound semiconductor laser.
  • this laser has a substrate 11 made of n-type gallium nitride and a laminated structure formed on the substrate 11.
  • the stacked structure has an n-type buffer layer 12, an n-type cladding layer 13, an n-type guide layer 14, an active layer (multiple electron well layer) 15, and a p-type guide layer in order from the side closer to the substrate 11.
  • a p-type cladding layer 1 a p-type contact layer 18, and a current confinement insulating layer 19.
  • the p-type contact layer 18 has a ridge extending along the cavity length direction, and a region other than the upper surface of the ridge is covered with the current confinement insulating layer 19.
  • a 0-type electrode 2 ⁇ ⁇ b is provided on the current confinement insulating layer 19, and a P-type electrode 20a is arranged between the p-type electrode 2 ⁇ b and the p-type contact layer 18.
  • This p-type electrode 20a is a portion of the upper surface of the type contact layer 18 that is not covered with the current confinement insulating layer 19 (Upper surface of the ridge).
  • an n-type electrode 21 is provided on the back surface of the substrate 11.
  • composition and thickness of each layer constituting the above laminated structure can be set, for example, as shown in Table 1 below.
  • FIG. 2 shows the laser of FIG. 1 mounted on a submount 22 by a junction-up arrangement.
  • the submount 22 is made of aluminum nitride having excellent conductivity and heat dissipation, and is arranged on a heat sink in a package (not shown).
  • a support member an object to which a chip of a semiconductor light emitting element is fixed may be referred to as a “support member” regardless of whether it is a submount or a heat sink.
  • a package in which a semiconductor light emitting element is fixed on such a support member is referred to as a “semiconductor light emitting element module”.
  • the n-type electrode 21 is sub-mounted
  • the heat generated in the active layer 15 mainly flows to the submount 22 via the GaN substrate 11 and is diffused to the heat sink.
  • FIG. 3 shows the laser of FIG. 1 mounted on a submount 22 with a junction-down arrangement.
  • the p-type electrode 21 is bonded to the main surface of the submount 22 and the substrate 11 is not located between the PN junction of the laser and the submount 22. .
  • Table 2 below shows the results of calculating the narcotic force generated in the active layer of the semiconductor laser of the present embodiment mounted as shown in FIG. 2 or FIG.
  • the minus sign of ⁇ force in Table 2 means “pulling force” and the plus sign means “compression force”.
  • the thickness of the gallium nitride substrate 11 If it is more than 100 m and less than 500 m, the range of the force acting on the active layer can be adjusted to a range of more than 0.12 GPa and less than +0.03 GPa. It is preferable to keep these 15 forces within the above range, because an increase in the power applied to the active layer causes a serious impairment in the reliability of the device.
  • the substrate thickness is 65 n or more and 500 m or less, the power of the active layer can be suppressed within the range of 0.12 GPa or more and +0.03 GPa or less.
  • the substrate thickness is within the range of 200 m or more and 500 um or less] ⁇ Minimize the absolute value of the force Value exists. From the viewpoint of reducing the tensile force acting on the active layer, it is advantageous to increase the thickness of the substrate. However, with a substrate having a thickness exceeding 500 m, it becomes difficult to form the end face of the light emitting element by cleavage. Therefore, the thickness of the gallium nitride substrate is suppressed to a low level of collicity acting on the active layer. It is preferable that the thickness is set so that cleavage is easy.
  • the board thickness is preferably more than 100 m and not more than 500 m to keep the absolute value of the force generated in the active layer in a smaller range. It is even more preferred to exceed
  • the preferable size of the substrate thickness is more than 100 m, and more preferably more than 150 m.
  • the substrate shape is processed so that the substrate thickness is large (/ U easily, and the end surface of the element is easily formed.
  • a stripe is formed on the back surface side of the substrate where the element end surface is formed). If a lip groove is formed, the end face can be easily formed by cleavage.
  • the amount of warpage of an element that is warped can be measured by using, for example, an interferometer.
  • FIG. 5 shows the relationship between the amount of warpage of the element measured in the present embodiment and the radius of curvature of the warp. If the cavity length is set, the amount of warpage of the chip is d, and the radius of curvature of the warp is R, the following equation is established.
  • the amount of warp d of the tip and the radius of curvature R are related.
  • Table 3 shows the amount of device warpage obtained when the device of FIG. 1 is mounted in a junction-down arrangement on a submount made of aluminum nitride.
  • Table 3 shows the warpage ⁇ of the element obtained from the narcotic power calculation in Table 2, which agrees well with the measured values in the lower part.
  • Table 3 when the thickness of the gallium nitride substrate is 100 Aim, the warpage of the device is 0. ⁇ 79 im, and when the thickness of the gallium nitride substrate is 200 m, the warpage of the device is ⁇ . 076 im.
  • Table 4 below shows the radius of curvature obtained by setting L to 75 m ( Table 4).
  • the radius of curvature of the element is in the range of about 89 to 93 cm.
  • the preferable lower limit of the radius of curvature in the junction-down arrangement is 89 cm.
  • the present embodiment is different from the first embodiment only in that the above-described submount 22 made of aluminum nitride is used, and instead of using the submount made of silicon carbide. .
  • the device shown in Fig. 1 is mounted on a submount made of silicon carbide by the junction down method or the junction up method. And calculated the narcotic force acting on the active layer of the device. Some of the results are shown in Table 5 below.
  • the relationship between the J force and the substrate thickness in the present embodiment also shows the same tendency as in the first embodiment.
  • the mounting temperature in the range of 190 ° C to 260 ° C,
  • the range of the narcotic force acting on the active layer is reduced by 1 ⁇ .22 GPa or more + ⁇ 03
  • An element using a substrate having a thickness exceeding the above range is not preferable because not only the excessive force acting on the active layer becomes excessive, but also it becomes difficult to form an end face of the element.
  • Table 6 shows the results of measuring the amount of warpage of the device when the device of FIG. 1 was mounted on a submount made of silicon carbide by the junction down method.
  • the upper part of Table 6 shows the calculated value of the warpage of the element obtained from the ⁇ force calculation, and the lower part shows the measured value of the warpage fogging.
  • Table 6 when the thickness of the gallium nitride substrate is 100 m, the warpage of the device is 0.085 m, and when the thickness of the gallium nitride substrate is 200 m, the warpage of the device Ha ⁇ . 080 im.
  • the radius of curvature in the junction down arrangement is smaller than when the submount is formed from aluminum nitride. Therefore, in this embodiment, The preferred lower limit of the radius of curvature is 83 cm, more preferably 85 cm or more. However, from the viewpoint of heat conduction, the thickness of the substrate is made thin, and in order to make it easier, the radius of curvature should be 80 cm or more.
  • the optimum substrate thickness in consideration of the material (thermal expansion coefficient, etc.) of the supporting member such as a submount or the like using a gallium nitride substrate.
  • the force generated in the active layer of a light-emitting element having a nitride III-V compound semiconductor as a substrate can be controlled by adjusting the substrate thickness, thereby preventing the element from deteriorating due to the force. It becomes possible.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
  • Led Device Packages (AREA)

Abstract

Cette invention concerne un dispositif électroluminescent à semi-conducteur comprenant un substrat semi-conducteur à composé nitruré III-V, une structure multi-couche à semi-conducteur formée sur la surface principale du substrat, une première électrode formée au dos du substrat et une seconde électrode formée sur la structure multi-couche à semi-conducteur. Le dispositif électroluminescent à semi-conducteur émet une lumière sous l'effet du courant passant entre la première et la seconde électrode. Le rayon de courbure qui définit l'ampleur de la flexion du dispositif électroluminescent à semi-conducteur est réglé pour ne pas être inférieur à 80 cm.
PCT/JP2004/002589 2003-03-06 2004-03-02 Dispositif electroluminescent a semi-conducteur avec compose nitrure iii-v et procede de fabrication WO2004079830A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003059926A JP2006179508A (ja) 2003-03-06 2003-03-06 窒化物系ｉｉｉ−ｖ族化合物半導体発光素子の劣化防止方法
JP2003-059926 2003-03-06

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WO2004079830A1 true WO2004079830A1 (fr) 2004-09-16

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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001168445A (ja) * 1999-09-30 2001-06-22 Denso Corp 半導体レーザ装置
JP2002043695A (ja) * 2000-07-26 2002-02-08 Sharp Corp 発光素子
JP2002175985A (ja) * 2000-12-05 2002-06-21 Hitachi Cable Ltd 窒化物半導体エピタキシャルウェハの製造方法及び窒化物半導体エピタキシャルウェハ
JP2002261376A (ja) * 2001-03-02 2002-09-13 Sharp Corp 半導体発光装置
JP2002299744A (ja) * 2001-04-02 2002-10-11 Sony Corp 半導体レーザアセンブリ
JP2002299769A (ja) * 2001-03-30 2002-10-11 Matsushita Electric Ind Co Ltd 半導体レーザ装置およびその製造方法
JP2003101113A (ja) * 2001-09-27 2003-04-04 Sharp Corp 窒化物半導体レーザ装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001168445A (ja) * 1999-09-30 2001-06-22 Denso Corp 半導体レーザ装置
JP2002043695A (ja) * 2000-07-26 2002-02-08 Sharp Corp 発光素子
JP2002175985A (ja) * 2000-12-05 2002-06-21 Hitachi Cable Ltd 窒化物半導体エピタキシャルウェハの製造方法及び窒化物半導体エピタキシャルウェハ
JP2002261376A (ja) * 2001-03-02 2002-09-13 Sharp Corp 半導体発光装置
JP2002299769A (ja) * 2001-03-30 2002-10-11 Matsushita Electric Ind Co Ltd 半導体レーザ装置およびその製造方法
JP2002299744A (ja) * 2001-04-02 2002-10-11 Sony Corp 半導体レーザアセンブリ
JP2003101113A (ja) * 2001-09-27 2003-04-04 Sharp Corp 窒化物半導体レーザ装置

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