WO2004064154A1 - Lead frame for a semiconductor device - Google Patents

Lead frame for a semiconductor device Download PDF

Info

Publication number
WO2004064154A1
WO2004064154A1 PCT/JP2004/000152 JP2004000152W WO2004064154A1 WO 2004064154 A1 WO2004064154 A1 WO 2004064154A1 JP 2004000152 W JP2004000152 W JP 2004000152W WO 2004064154 A1 WO2004064154 A1 WO 2004064154A1
Authority
WO
WIPO (PCT)
Prior art keywords
lead frame
silver
alloy coating
gold
palladium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2004/000152
Other languages
French (fr)
Inventor
Hidekazu Tomohiro
Masayuki Fujii
Norio Satou
Tomoyuki Yamada
Tomio Kusano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to US10/542,419 priority Critical patent/US7692277B2/en
Priority to KR1020057012373A priority patent/KR101059361B1/en
Priority to DE112004000155.2T priority patent/DE112004000155B4/en
Publication of WO2004064154A1 publication Critical patent/WO2004064154A1/en
Anticipated expiration legal-status Critical
Priority to US12/509,065 priority patent/US7994616B2/en
Priority to US12/716,938 priority patent/US8541871B2/en
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/456—Materials
    • H10W70/457—Materials of metallic layers on leadframes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Definitions

  • the present invention relates to a lead frame for a semiconductor device, and in particular relates to techniques of improving a light reflectance of a lead frame .
  • the palladium or palladium-alloy coating has a high high-temperature stability, which makes the lead frame suitable for high-temperature leadless soldering.
  • the nickel plating serves as base plating, and contributes to a high wire bonding efficiency, a high leadless soldering efficiency, a high corrosion resistance, and a high adhesive strength with the resin that forms the package.
  • the lead frame of the present invention has a characteristic construction in which silver or silver-alloy plating is applied as the outermost coating of the inner part, to achieve a favorable light reflectance .
  • this characteristic construction is realized by coating the lead frame body substantially entirely with nickel plating, palladium plating, and gold flash plating in this order, and further coating the inner part of the lead frame with silver plating .

Landscapes

  • Led Device Packages (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

A lead frame (100) for a semiconductor device is formed by applying nickel plating (102), palladium plating (103), and gold flash plating (104) substantially entirely to a lead frame body (101) such as a copper thin plate in this order, and further applying silver plating (105) selectively to part of an inner part that is to be enclosed with a package of the semiconductor device. The lead frame (100) may also include a base of the package. The silver plating contributes to an excellent light reflectance and wire bonding efficiency of the inner part, whereas the gold flash plating contributes to an excellent resistance to corrosion and soldering efficiency of an outer part that is outside the package.

Description

DESCRIPTION
LEAD FRAME FOR A SEMICONDUCTOR DEVICE
TECHNICAL FIELD
The present invention relates to a lead frame for a semiconductor device, and in particular relates to techniques of improving a light reflectance of a lead frame .
BACKGROUND ART
Conventionally, gold-silver alloy flash plating is formed at an outermost layer of a lead frame for a semiconductor device, to ensure a high resistance to corrosion. An example of such techniques is disclosed in Unexamined Japanese Patent Application Publication No. Hll-008341.
FIG. 6 is a representation of a construction of a lead frame described in the above document . In the drawing, a lead frame 900 is formed by applying nickel plating 902, palladium plating 903, and gold-silver alloy flash plating 904 to a lead frame body 901 in this order. According to the document, the lead frame 900 having this construction exhibited an excellent corrosion resistance in a salt-spray test. However, though this construction certainly has a high corrosion resistance, it has only a low light reflectance. This being so, especially when a semiconductor light-emitting element such as an LED is mounted on the lead frame to form a semiconductor light-emitting device, the lead frame cannot sufficiently reflect rear light of the light-emitting element, which impairs the luminous efficiency of the entire device.
DISCLOSURE OF THE INVENTION
The present invention was conceived in view of the problem described above, and aims to provide a lead frame for a semiconductor device with an improved light reflectance . The stated object can be achieved by a lead frame for a semiconductor device, including: a lead frame body; and a plurality of metal coatings which include a silver or silver-alloy coating and are applied to the lead frame body, wherein the silver or silver-alloy coating is an outermost metal coating of a predetermined part of the lead frame, the predetermined part being to be enclosed with a package of the semiconductor device.
Here, the plurality of metal coatings may further include a gold or gold-alloy coating which is an outermost metal coating of a part of the lead frame other than the predetermined part.
Here, the silver or silver-alloy coating may have a thickness of 0. lμm or more.
Here, a base that is a part of the package may be inserted to the lead frame with a portion of the predetermined part being enclosed with the base.
According to these constructions, the silver or silver-alloy coating delivers an excellent light reflectance and wire bonding efficiency of the predetermined part which is enclosed with the package, and the gold or gold-alloy coating delivers an excellent resistance to corrosion and soldering efficiency of the other part which is outside the package.
Thus , the lead frame exhibits a high light reflectance in the predetermined part. Accordingly, when used in a semiconductor light-emitting device, the lead frame efficiently reflects rear light of a semiconductor light-emitting element, with it being possible to enhance the luminous efficiency of the entire device. Here, the gold or gold-alloy coating may substantially entirely cover the lead frame body, wherein the silver or silver-alloy coating is applied over the gold or gold-alloy coating only in the predetermined part.
According to this construction, the silver or silver-alloy coating partially covers the lead frame body, whereas the gold or gold-alloy coating entirely covers the lead frame body. This simplifies the manufacturing process of the lead frame.
Here, the plurality of metal coatings may further include a nickel or nickel-alloy coating and a palladium or palladium-alloy coating, wherein the nickel or nickel-alloy coating, the palladium or palladium-alloy coating, the gold or gold-alloy coating, and the silver or silver-alloy coating are applied in the stated order, with the nickel or nickel-alloy coating and the palladium or palladium-alloy coating substantially entirely covering the lead frame body.
According to this construction, the palladium or palladium-alloy coating has a high high-temperature stability, which makes the lead frame suitable for high-temperature leadless soldering.
Here, the silver or silver-alloy coating may substantially entirely cover the lead frame body, wherein the gold or gold-alloy coating is applied over the silver or silver-alloy coating only in the part of the lead frame other than the predetermined part.
According to this construction, the gold, or gold-alloy coating partially covers the lead frame body, whereas the silver or silver-alloy coating entirely covers the lead frame body. This simplifies the manufacturing process of the lead frame.
Here, the plurality of metal coatings may further include a nickel or nickel-alloy coating and a palladium or palladium-alloy coating, wherein the nickel or nickel-alloy coating, the palladium or palladium-alloy _coating, the silver or silver-alloy coating, and the gold or gold-alloy coating are applied in the stated order, with the nickel or nickel-alloy coating and the palladium or palladium-alloy coating substantially entirely covering the lead frame body.
According to this construction, the palladium or palladium-alloy coating has a high high-temperature stability, which makes the lead frame suitable for high-temperature leadless soldering. Here, the silver or silver-alloy coating may be applied except at least one part of the portion enclosed with the base.
According to this construction, the adhesion between the lead frame and a resin that forms the package is strong in the area where the silver or silver-alloy coating is absent in the predetermined part. This maintains the seal of the package and improves the resistance to corrosion in the predetermined part .
Here, a semiconductor light-emitting element may be mounted on the lead frame to form a semiconductor light-emitting device.
According to this construction, the semiconductor light-emitting device is formed using the lead frame that has an excellent light reflectance in the predetermined part. This makes it possible to efficiently reflect rear light of the semiconductor light-emitting element, which contributes to a high luminous efficiency of the entire device .
BRIEF DESCRIPTION OF DRAWINGS
FIG. 1 is a top view of a lead frame to which an embodiment of the invention relates .
FIG. 2 is a representation of a plating construction of the lead frame shown in FIG. 1. FIG. 3 is a perspective view of the lead frame after a package is formed.
FIG. 4 is a representation of a cross section of a semiconductor light-emitting device that uses the lead frame . FIG. 5 is a graph for comparing reflectances of lead frames .
FIG. 6 is a representation of a plating construction of a conventional lead frame.
BEST MODE FOR CARRYING OUT THE INVENTION An embodiment of the present invention is described in detail below, by referring to the drawings. (Pattern of a Lead Frame)
FIG. 1 is a top view of a lead frame to which the embodiment of the present invention relates .
In the drawing, a lead frame 100 is formed by pressing or etching a lead frame body in the illustrated pattern and then plating the lead frame body as described later.
For example, the lead frame body is a thin plate of an iron alloy or a copper alloy.
A package for enclosing part of the lead frame 100 and housing a semiconductor element such as a semiconductor light-emitting element is provided in each of the areas indicated by the dashed line boxes . The package includes a base and a cover. The base has a depression for mounting the semiconductor light-emitting element. The cover seals the depression on which the semiconductor light-emitting element is mounted.
In this specification, a part of the lead frame 100 which is inside each of the areas indicated by the dashed line boxes, i.e. which is enclosed with the package, is called an inner part, whereas a part of the lead frame 100 which is outside the package is called an outer part. The inner part includes inner leads . The inner part may also include an element mounting unit that is provided separately from or as part of the inner leads . (Plating.)
FIG. 2 is a representation of a plating construction of the lead frame 100, taken along the lines A-A' in FIG. 1.
The lead frame 100 is formedby applying nickel plating 102, palladium plating 103, and gold flash plating 104 to a lead frame body 101 in this order, and further applying silver plating 105 to part of the inner part. For example, the nickel plating 102 has a thickness of 0.5 to 2. Oμ , the palladium plating 103 has a thickness of0.005to0.07μm, the gold flashplating 104 has a thickness of0.003to0. Olμm, and the silver plating 105 has a thickness of 0. lμm or more. Here, these plating layers may instead be made of alloys. Which is to say, the nickel plating 102 may be nickel-alloy plating, the palladium plating 103 may be palladium-alloy plating, the gold flash plating 104 may be gold-alloy flash plating, and the silver plating 105 may be silver-alloy plating.
After plating, the base of the package is inserted to the area indicated by the dashed lines. The base is made of a white-colored or light-colored insulating resin, such as polyphthalamide . The base has a depression as shown in the drawing, and releases light of the semiconductor light-emitting element placed in the depression in an upward direction . After the semiconductor light-emitting element is placed in the depression, the depression is filled with a sealing transparent resin (e.g. an epoxy resin) to form the cover. The base and the cover together constitute the package.
It should be noted here that the silver plating 105 only partially covers the inner part, i.e., the part of the inner part enclosed with the base is partially not plated with silver.
(Semiconductor Device using the Lead Frame 100)
FIG. 3 is a perspective view of the lead frame 100 after a base 200 is formed.
FIG. 4 is a representation of a cross section of a semiconductor light-emitting device 700 which uses the lead frame 100.
The semiconductor light-emitting device 700 is formed by mounting a semiconductor light-emitting element 400 on part of the inner part exposed to the depression of the base 200, connecting the semiconductor light-emitting element 400 with the inner part using bonding wires 500, and then enclosing a transparent resin 300 in the depression to form a cover .
Light 601 of the semiconductor light-emitting element 400 is directly released upward, whereas other light 602 of the semiconductor light-emitting element 400 is reflected off the inner part and the base 200 and then released.
The inventors of the present invention confirmed that such a constructed lead frame has the following excellent properties . (Light Reflectance)
FIG. 5 is a graph for comparing light reflectances of lead frames . A light reflectance of a lead frame of each of sample 1 (the silver-plated lead frame part of the present invention) , sample 2 (a comparative example) , and sample 3 (a conventional example) was measured using a visible-ultraviolet spectrophotometer , where a light reflectance of barium sulfate is 100. Sample 1 has the construction described above.
Sample 2 is formed by applying copper strike plating and silver plating that has a thickness of 3μm to a copper alloy thin plate as a lead frame body, in this order. Sample 2 is used as a comparative example that can deliver a light reflectance similar to the present invention, by single-layer silver plating.
Sample 3 is a conventional lead frame. Sample 3 is formed by applying nickel plating of 1.0 to 1.2μm in thickness, palladium plating of 0.03μm in thickness, and gold flash plating of O.OOδμm in thickness to a copper alloy thin plate as a lead frame body, in this order.
As shown in the graph, the silver-plated lead frame part of the present invention has a light reflectance that is at least 25% higher than that of the conventional example and a little higher than that of the comparative example, for visible light of 400 to 700nm in wavelength. (Resin Adhesiveness)
Also, the inventors of the present invention measured a shear adhesive strength of the contact surfaces of a resin which forms the base and a palladium-plated lead frame part and a shear adhesive strength of the contact surfaces of the resin and a silver-plated lead frame part. As a result, the inventors found that the shear adhesive strength of the resin and the palladium-plated lead frame part is greater than that of the resin and the silver-plated lead frame part. In view of this, silver plating is provided only partially in the inner part, that is, silver plating is provided in the inner part except a part of the area that is enclosed with the base. Asaresult, the resin adheres to the palladium plating layer through the gold flash plating layer, in the portion of the inner part which is not plated with silver. This produces a greater shear adhesive strength than in the portion of the inner part which is plated with silver. Since the gold flash plating layer is extremely thin, it does not significantly affect the shear adhesive strength.
The inventors of the present invention conducted an experiment of soaking samples 1 and 2 in red ink under the same conditions. As a result, red ink did not seep into sample 1 which is not plated with silver in part of the area enclosed with the base, whilst red ink seeped into sample 2 which is entirely plated with silver. (Other Properties)
In addition, each of the plating layers of the lead f ame has the following excellent properties .
The silver plating not only achieves an excellent light reflectance as described above, but also has excellent connectivity with the semiconductor light-emitting element mounted thereon and a high wire bonding efficiency.
The gold flash plating has a high thermal stability, which enhances the soldering efficiency of the outer part.
The palladium plating has a high chemical stability, and so exhibits an excellent resistance to corrosion under high-temperature environments.
The nickel plating serves as base plating, and contributes to a high wire bonding efficiency, a high leadless soldering efficiency, a high corrosion resistance, and a high adhesive strength with the resin that forms the package. As described above, the lead frame of the present invention has a characteristic construction in which silver or silver-alloy plating is applied as the outermost coating of the inner part, to achieve a favorable light reflectance . In the above embodiment, this characteristic construction is realized by coating the lead frame body substantially entirely with nickel plating, palladium plating, and gold flash plating in this order, and further coating the inner part of the lead frame with silver plating . However, the construction of the present invention can equally be realized by coating the lead frame body substantially entirely with nickel plating, palladium plating, and silver plating, and further coating the outer part of the lead frame with gold flash plating. Hence this lead frame is included in the present invention, too.
In the above embodiment, each of the metal coatings applied to the lead frame body is referred to as plating for the sake of simplicity. However, the metal coating method of the present invention is not limited to plating. For example, the metal coatings may be formed using a known metal coating method such as electroplating, chemical plating, evaporation, sputtering, or diffusion.
Here, to coat a desired area with a metal, a conventional method such as masking or blasting is applicable. INDUSTRIAL APPLICABILITY
The present invention can be used for a semiconductor light-emitting device that requires a high luminous efficiency, such as an LED device employed in lighting, indication, decoration, communication, and the like.

Claims

1. A lead frame for a semiconductor device, comprising: a lead frame body; and a plurality of metal coatings which include a silver or silver- alloy coating and are applied to the lead frame body, wherein the silver or silver-alloy coating is an outermost metal coating of a predetermined part of the lead frame, the predetermined part being to be enclosed with a package of the semiconductor device.
2. The lead frame of Claim 1, wherein the plurality of metal coatings further include a gold or gold-alloy coating which is an outermost metal coating of a part of the lead frame other than the predetermined part.
3. The lead frame of Claim 2, wherein the gold or gold-alloy coating substantially entirely covers the lead frame body, and the silver or silver-alloy coating is applied over the gold or gold-alloy coating only in the predetermined part .
4. The lead frame of Claim 3 , wherein the plurality of metal coatings further include a nickel or nickel-alloy coating and a palladium or palladium-alloy coating, and the nickel or nickel-alloy coating, the palladium or palladium- alloy coating, the gold or gold-alloy coating, and the silver or silver-alloy coating are applied in the stated order, with the nickel or nickel-alloy coating and the palladium or palladium-alloy coating substantially entirely covering the lead frame body.
5. The lead frame of Claim 2, wherein the silver or silver-alloy coating substantially entirely covers the lead frame body, and the gold or gold-alloy coating is applied over the silver or silver-alloy coating only in the part of the lead frame other than the predetermined part.
6. The lead frame of Claim 5, wherein the plurality of metal coatings further include a nickel or nickel-alloy coating and a palladium or palladium-alloy coating, and the nickel or nickel-alloy coating, the palladium or palladium-alloy coating, the silver or silver-alloy coating, and the gold or gold-alloy coating are applied in the stated order, with the nickel or nickel-alloy coating and the palladium or palladium-alloy coating substantially entirely covering the lead frame body.
7. The lead frame of Claim 1, wherein the silver or silver-alloy coating has a thickness of 0. lμm or more.
8. The lead frame of Claim 1, to which a base that is a part of the package is inserted with a portion of the predetermined part being enclosed with the base.
9. The lead frame of Claim 8, wherein the silver or silver-alloy coating is applied except at least one part of the portion enclosed with the base.
10. The lead frame of Claim 1, on which a semiconductor light-emitting element is mounted to form a semiconductor light-emitting device.
PCT/JP2004/000152 2003-01-16 2004-01-13 Lead frame for a semiconductor device Ceased WO2004064154A1 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
US10/542,419 US7692277B2 (en) 2003-01-16 2004-01-13 Multilayered lead frame for a semiconductor light-emitting device
KR1020057012373A KR101059361B1 (en) 2003-01-16 2004-01-13 Lead frame and semiconductor light emitting device
DE112004000155.2T DE112004000155B4 (en) 2003-01-16 2004-01-13 Leadframe for a semiconductor device
US12/509,065 US7994616B2 (en) 2003-01-16 2009-07-24 Multilayered lead frame for a semiconductor light-emitting device
US12/716,938 US8541871B2 (en) 2003-01-16 2010-03-03 Multilayered lead frame for a semiconductor light-emitting device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003-007988 2003-01-16
JP2003007988 2003-01-16

Related Child Applications (3)

Application Number Title Priority Date Filing Date
US10542419 A-371-Of-International 2004-01-13
US12/509,065 Division US7994616B2 (en) 2003-01-16 2009-07-24 Multilayered lead frame for a semiconductor light-emitting device
US12/716,938 Division US8541871B2 (en) 2003-01-16 2010-03-03 Multilayered lead frame for a semiconductor light-emitting device

Publications (1)

Publication Number Publication Date
WO2004064154A1 true WO2004064154A1 (en) 2004-07-29

Family

ID=32709142

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2004/000152 Ceased WO2004064154A1 (en) 2003-01-16 2004-01-13 Lead frame for a semiconductor device

Country Status (7)

Country Link
US (3) US7692277B2 (en)
KR (1) KR101059361B1 (en)
CN (2) CN100499099C (en)
DE (1) DE112004000155B4 (en)
MY (1) MY144642A (en)
TW (1) TWI264105B (en)
WO (1) WO2004064154A1 (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1777743A3 (en) * 2005-10-20 2008-11-19 Panasonic Corporation Lead frame
US20100186993A1 (en) * 2007-03-27 2010-07-29 Suguru Yamaguchi Silver-coated material for movable contact component and method for manufacturing such silver-coated material
WO2011004928A1 (en) * 2009-07-07 2011-01-13 서울반도체 주식회사 Light emitting device
CN102257647A (en) * 2008-12-19 2011-11-23 古河电气工业株式会社 Lead frame for optical semiconductor device and manufacturing method thereof
JP2012160581A (en) * 2011-02-01 2012-08-23 Nichia Chem Ind Ltd Light emitting device and manufacturing method of the same
WO2013045196A1 (en) * 2011-09-29 2013-04-04 Osram Gmbh Optoelectronic semiconductor component
EP2654092A3 (en) * 2012-04-16 2015-12-09 Lextar Electronics Corp. Light-emitting diode package
US12351936B2 (en) 2022-05-19 2025-07-08 Te Connectivity Solutions Gmbh Layered plating stack for improved contact resistance in corrosive environments

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101154801B1 (en) * 2004-12-03 2012-07-03 엔지케이 스파크 플러그 캄파니 리미티드 Ceramic package for receiving ceramic substrate and light emitting device
JP2006344925A (en) * 2005-05-11 2006-12-21 Sharp Corp Light emitting element mounting frame and light emitting device
JP2008091818A (en) * 2006-10-05 2008-04-17 Matsushita Electric Ind Co Ltd Lead frame for optical semiconductor device, optical semiconductor device using the same, and manufacturing method thereof
TW200834968A (en) * 2007-02-13 2008-08-16 Harvatek Corp Method of making light-emitting diode structure with high heat dissipation effect and structure made thereby
KR101485319B1 (en) * 2008-06-30 2015-01-22 서울반도체 주식회사 Light emitting device
JP2010045140A (en) * 2008-08-11 2010-02-25 Nec Electronics Corp Lead frame, method of manufacturing the same, and method of manufacturing semiconductor device
KR101509228B1 (en) * 2008-09-17 2015-04-10 서울반도체 주식회사 LIGHT EMITTING DIODE PACKAGE WITH EXTERNAL LEADS LOWER INTERNAL LEAD AND METHOD FOR MANUFACTURING THE SAME
WO2010035944A2 (en) * 2008-09-29 2010-04-01 서울반도체 주식회사 Light-emitting device
CN102265417B (en) * 2008-12-26 2013-10-23 古河电气工业株式会社 Lead frame for optical semiconductor device, manufacturing method thereof, and optical semiconductor device
CN101867009B (en) * 2010-05-07 2014-10-15 厦门永红科技有限公司 LED lead frame and electroplating method and electroplating equipment thereof
CN102844897B (en) * 2010-06-15 2016-01-13 古河电气工业株式会社 Lead frame for optical semiconductor device, manufacturing method of lead frame for optical semiconductor device, and optical semiconductor device
TW201230417A (en) * 2011-01-11 2012-07-16 Lextar Electronics Corp Leadframe, packaging cup incorporating the leadframe and light emitting diode lamp having the leadframe
KR101802850B1 (en) 2011-01-11 2017-11-29 해성디에스 주식회사 Semiconductor package
US8846421B2 (en) * 2011-03-10 2014-09-30 Mds Co. Ltd. Method of manufacturing lead frame for light-emitting device package and light-emitting device package
KR101217308B1 (en) * 2011-05-27 2012-12-31 앰코 테크놀로지 코리아 주식회사 Lead frame for semiconductor device
US20130098659A1 (en) * 2011-10-25 2013-04-25 Yiu Fai KWAN Pre-plated lead frame for copper wire bonding
TWI483437B (en) * 2012-03-27 2015-05-01 Lextar Electronics Corp Light emitting diode package and method for fabricating the same
CN102956795A (en) * 2012-07-17 2013-03-06 孙百贵 TOP LED (Light Emitting Diode) metal support and manufacturing method thereof
CN102903823A (en) * 2012-07-17 2013-01-30 孙百贵 Novel TOP LED (Light-Emitting Diode) metal bracket and manufacturing method thereof
KR101802851B1 (en) 2013-03-11 2017-11-29 해성디에스 주식회사 Lead frame, semiconductor package including the lead frame, and method of manufacturing the lead frame
KR101511032B1 (en) * 2013-09-25 2015-04-10 앰코 테크놀로지 코리아 주식회사 Leadframe for manufacturing LED package and LED package using the same
DE102014101154A1 (en) * 2014-01-30 2015-07-30 Osram Opto Semiconductors Gmbh Optoelectronic arrangement
DE102014101155A1 (en) * 2014-01-30 2015-07-30 Osram Opto Semiconductors Gmbh Optoelectronic component
CN110265376A (en) 2018-03-12 2019-09-20 意法半导体股份有限公司 Lead frame finish
US11735512B2 (en) 2018-12-31 2023-08-22 Stmicroelectronics International N.V. Leadframe with a metal oxide coating and method of forming the same
KR102666511B1 (en) * 2023-08-31 2024-05-21 (주)엠케이켐앤텍 Semiconductor package substrate and semiconductor package including the same

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6178150A (en) * 1984-09-25 1986-04-21 Sumitomo Electric Ind Ltd Lead frame for resin seal type semiconductor device
JPS61148883A (en) * 1984-12-22 1986-07-07 Toshiba Corp Lead frame for optical semiconductor device
JPS62263665A (en) * 1986-05-12 1987-11-16 Hitachi Ltd Lead frame and semiconductor device using thesame
JPH01305551A (en) * 1988-06-03 1989-12-08 Kobe Steel Ltd Lead frame for semiconductor device and semiconductor device
DE19850526A1 (en) * 1998-11-03 2000-05-04 Heraeus Gmbh W C Lead-free solderable copper substrate, e.g. a lead frame for semiconductor components, production
EP1094519A1 (en) * 1999-04-08 2001-04-25 Shinko Electric Industries Co. Ltd. Lead frame for semiconductor device
US20020047186A1 (en) * 2000-07-13 2002-04-25 Tellkamp John P. Semiconductor leadframes comprising silver plating

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4979017A (en) * 1989-02-23 1990-12-18 Adam Mii Semiconductor element string structure
US5227662A (en) 1990-05-24 1993-07-13 Nippon Steel Corporation Composite lead frame and semiconductor device using the same
US5384155A (en) * 1992-06-04 1995-01-24 Texas Instruments Incorporated Silver spot/palladium plate lead frame finish
JP2989406B2 (en) * 1993-01-29 1999-12-13 シャープ株式会社 Preplated frame for semiconductor device and method of manufacturing the same
JPH0714962A (en) * 1993-04-28 1995-01-17 Mitsubishi Shindoh Co Ltd Lead frame material and lead frame
JP3127195B2 (en) * 1994-12-06 2001-01-22 シャープ株式会社 Light emitting device and method of manufacturing the same
JPH10150223A (en) * 1996-11-15 1998-06-02 Rohm Co Ltd Chip type light emitting device
KR100231828B1 (en) * 1997-02-20 1999-12-01 유무성 Multi-layer plated lead frame
TW448204B (en) 1997-04-09 2001-08-01 Jeng Wu Shuen A method for catalytic depolymerization of polyethylene terephthalate
JPH118341A (en) * 1997-06-18 1999-01-12 Mitsui High Tec Inc Lead frame for semiconductor device
JP3908383B2 (en) * 1998-05-29 2007-04-25 ローム株式会社 Semiconductor device
DE59900741D1 (en) 1998-06-10 2002-02-28 Heraeus Gmbh W C METHOD FOR PRODUCING A LEAD-FREE SUBSTRATE
DE19829197C2 (en) * 1998-06-30 2002-06-20 Siemens Ag Component emitting and / or receiving radiation
JP2002335012A (en) 1999-02-25 2002-11-22 Nichia Chem Ind Ltd Light emitting diode and dot matrix display using the same
JP2001127229A (en) 1999-11-01 2001-05-11 Nec Corp Lead frame and resin-encapsulated semiconductor device using the lead frame
JP4432275B2 (en) * 2000-07-13 2010-03-17 パナソニック電工株式会社 Light source device
JP2002060122A (en) 2000-08-15 2002-02-26 Canon Aptex Inc Sheet sheaf binder and image forming device provided therewith
ATE425556T1 (en) 2001-04-12 2009-03-15 Matsushita Electric Works Ltd LIGHT SOURCE COMPONENT WITH LED AND METHOD FOR PRODUCING IT
DE10229067B4 (en) * 2002-06-28 2007-08-16 Osram Opto Semiconductors Gmbh Optoelectronic component and method for its production
TWI302758B (en) * 2006-04-21 2008-11-01 Silicon Base Dev Inc Package base structure of photo diode and manufacturing method of the same
KR100854328B1 (en) * 2006-07-07 2008-08-28 엘지전자 주식회사 Light emitting device package and its manufacturing method

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6178150A (en) * 1984-09-25 1986-04-21 Sumitomo Electric Ind Ltd Lead frame for resin seal type semiconductor device
JPS61148883A (en) * 1984-12-22 1986-07-07 Toshiba Corp Lead frame for optical semiconductor device
JPS62263665A (en) * 1986-05-12 1987-11-16 Hitachi Ltd Lead frame and semiconductor device using thesame
JPH01305551A (en) * 1988-06-03 1989-12-08 Kobe Steel Ltd Lead frame for semiconductor device and semiconductor device
DE19850526A1 (en) * 1998-11-03 2000-05-04 Heraeus Gmbh W C Lead-free solderable copper substrate, e.g. a lead frame for semiconductor components, production
EP1094519A1 (en) * 1999-04-08 2001-04-25 Shinko Electric Industries Co. Ltd. Lead frame for semiconductor device
US20020047186A1 (en) * 2000-07-13 2002-04-25 Tellkamp John P. Semiconductor leadframes comprising silver plating

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 010, no. 248 (E - 431) 26 August 1986 (1986-08-26) *
PATENT ABSTRACTS OF JAPAN vol. 010, no. 347 (E - 457) 21 November 1986 (1986-11-21) *
PATENT ABSTRACTS OF JAPAN vol. 012, no. 146 (E - 605) 6 May 1988 (1988-05-06) *
PATENT ABSTRACTS OF JAPAN vol. 014, no. 102 (E - 0894) 23 February 1990 (1990-02-23) *

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1777743A3 (en) * 2005-10-20 2008-11-19 Panasonic Corporation Lead frame
US8283759B2 (en) 2005-10-20 2012-10-09 Panasonic Corporation Lead frame having outer leads coated with a four layer plating
US20100186993A1 (en) * 2007-03-27 2010-07-29 Suguru Yamaguchi Silver-coated material for movable contact component and method for manufacturing such silver-coated material
CN102257647A (en) * 2008-12-19 2011-11-23 古河电气工业株式会社 Lead frame for optical semiconductor device and manufacturing method thereof
CN102257647B (en) * 2008-12-19 2014-07-23 古河电气工业株式会社 Lead frame for optical semiconductor device and manufacturing method thereof
WO2011004928A1 (en) * 2009-07-07 2011-01-13 서울반도체 주식회사 Light emitting device
JP2012160581A (en) * 2011-02-01 2012-08-23 Nichia Chem Ind Ltd Light emitting device and manufacturing method of the same
WO2013045196A1 (en) * 2011-09-29 2013-04-04 Osram Gmbh Optoelectronic semiconductor component
US9437792B2 (en) 2011-09-29 2016-09-06 Osram Gmbh Optoelectronic semiconductor component
EP2654092A3 (en) * 2012-04-16 2015-12-09 Lextar Electronics Corp. Light-emitting diode package
US12351936B2 (en) 2022-05-19 2025-07-08 Te Connectivity Solutions Gmbh Layered plating stack for improved contact resistance in corrosive environments

Also Published As

Publication number Publication date
DE112004000155T5 (en) 2008-03-20
US8541871B2 (en) 2013-09-24
DE112004000155B4 (en) 2019-06-19
CN101546803B (en) 2010-12-08
US20100155770A1 (en) 2010-06-24
US7692277B2 (en) 2010-04-06
US20060102936A1 (en) 2006-05-18
TWI264105B (en) 2006-10-11
KR20050097926A (en) 2005-10-10
US7994616B2 (en) 2011-08-09
TW200416993A (en) 2004-09-01
MY144642A (en) 2011-10-31
CN100499099C (en) 2009-06-10
US20090283791A1 (en) 2009-11-19
CN101546803A (en) 2009-09-30
CN1795554A (en) 2006-06-28
KR101059361B1 (en) 2011-08-24

Similar Documents

Publication Publication Date Title
US7994616B2 (en) Multilayered lead frame for a semiconductor light-emitting device
US9515059B2 (en) Proximity sensor having light-blocking structure in leadframe and method of making same
US6034422A (en) Lead frame, method for partial noble plating of said lead frame and semiconductor device having said lead frame
US7413934B2 (en) Leadframes for improved moisture reliability and enhanced solderability of semiconductor devices
US7788800B2 (en) Method for fabricating a leadframe
TWI514629B (en) A semiconductor light-emitting element mounting substrate, and a semiconductor light-emitting device using the same
TW201434185A (en) Illuminating device
CN102318090A (en) Encapsulated optoelectronic semiconductor device with solder stop layer and corresponding method
JP3940124B2 (en) apparatus
JP5578960B2 (en) Lead frame for optical semiconductor device and manufacturing method thereof
JP2004207672A (en) Light emitting element storage package and light emitting device
JP2010206034A (en) Lead frame for optical semiconductor device, package for the optical semiconductor device, the optical semiconductor device, production method of lead frame for optical semiconductor device, production method of package for the optical semiconductor device, and production method of the optical semiconductor device
JP2005072158A (en) Light emitting device substrate
JP3088422U (en) Light emitting diode
JPH05102531A (en) Chip component type light emitting diode
JP4715772B2 (en) Semiconductor device
US5530283A (en) Lead frame and lead frame material
JP2011129658A (en) Lead frame for optical semiconductor device, method for manufacturing the same, and optical semiconductor device
JP6635152B2 (en) Lead frame, light emitting device package, light emitting device, and method of manufacturing light emitting device
KR20050001523A (en) Layered metal architecture of substrate for stud bump
JPS59144159A (en) Plastic-sealed ic
JPH0661392A (en) Semiconductor device lead frame

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): BW GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 1020057012373

Country of ref document: KR

WWE Wipo information: entry into national phase

Ref document number: 20048021943

Country of ref document: CN

WWP Wipo information: published in national office

Ref document number: 1020057012373

Country of ref document: KR

ENP Entry into the national phase

Ref document number: 2006102936

Country of ref document: US

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 10542419

Country of ref document: US

122 Ep: pct application non-entry in european phase
DPEN Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed from 20040101)
WWP Wipo information: published in national office

Ref document number: 10542419

Country of ref document: US

RET De translation (de og part 6b)

Ref document number: 112004000155

Country of ref document: DE

Date of ref document: 20080320

Kind code of ref document: P

WWE Wipo information: entry into national phase

Ref document number: DE